Composite electrode, preparation method thereof and photoelectric device

Abstract

The invention belongs to the technical field of photoelectric devices, and particularly relates to a composite electrode, a preparation method thereof and a photoelectric device. The preparation method of the composite electrode comprises the following steps: forming a first seed layer by adopting an atomic layer deposition method; and depositing a conductive layer on the first seed layer to obtain the composite electrode. The conductive layer of the composite electrode is good in continuity, high in transmittance and low in sheet resistance.

Description

Technical Field

[0001] The present application relates to the technical field of optoelectronic devices, and more specifically, to a composite electrode, a preparation method thereof, and an optoelectronic device. Background Art

[0002] Metallic films such as silver and gold films, which have relatively high conductivity, are widely used as conductive layers in optoelectronic devices such as displays, photovoltaics, and sensors. With the update of product forms and the diversification of functions, transparency and flexibility are important features that most optoelectronic products should possess. Transparent and flexible products impose higher requirements on the films in displays and photovoltaic devices, especially on the conductive layer, that is, the conductive layer is required to have a high transmittance while ensuring its low resistance. The conductive layer can be thinned and used as a semi-transparent film. However, if the transmittance of the conductive layer is further increased by thinning, its resistance will increase significantly. Therefore, improvement is needed. Summary of the Invention

[0003] Based on this, the present application provides a composite electrode, a preparation method thereof, and an optoelectronic device.

[0004] In order to solve the above technical problems, an embodiment of the present application provides a preparation method of a composite electrode, which adopts the following technical solution:

[0005] A preparation method of a composite electrode, the method comprising the following steps:

[0006] Forming a first seed layer by atomic layer deposition;

[0007] Depositing a conductive layer on the first seed layer to obtain the composite electrode.

[0008] Further, the step of depositing a conductive layer on the first seed layer includes:

[0009] Preparing a second seed layer on the first seed layer;

[0010] Preparing a third seed layer on the second seed layer;

[0011] Depositing a conductive layer on the third seed layer;

[0012] Wherein, the second seed layer is a discontinuous seed layer; optionally, the second seed layer includes a plurality of island-shaped units arranged at intervals;

[0013] Optionally, at least one of the second seed layer and the third seed layer is formed by atomic layer deposition.

[0014] Further, at least one of the second seed layer and the third seed layer is formed by atomic layer deposition.

[0015] Further, the steps of using atomic layer deposition method specifically include:

[0016] S21. Simultaneously introduce a precursor and a carrier gas to generate a semi-product thin film;

[0017] S22. Stop introducing the precursor, and perform a first plasma treatment on the semi-product thin film to modify the semi-product thin film;

[0018] S23. Re-introduce the precursor, and the precursor reacts with the semi-product thin film to obtain a first seed layer, a second seed layer, or a third seed layer.

[0019] Further, the precursor is one of aluminum acetylacetonate, dimethylaluminum amide, triisobutylaluminum, triethylaluminum, trimethylaluminum, molybdenum hexafluoride, molybdenum hexacarbonyl, copper perfluoropyruvate, copper acetylacetonate, tetramethylgermanium, zinc ethanolate, titanium tetrapyruvate, pentaacetyl compound, vanadium succinate, tungsten hexacarbonyl, triisopropylaluminum, or trimethylgallium;

[0020] And / or, the carrier gas is one of He, N2, Ne, or Ar;

[0021] And / or, the step of obtaining the first seed layer, the second seed layer, or the third seed layer includes: repeating steps S21 to S23 at least once until a first seed layer, a second seed layer, or a third seed layer with a target thickness is obtained.

[0022] Further, before repeating steps S21 to S23 at least once, it further includes:

[0023] Removing the unreacted precursor;

[0024] Removing the unreacted groups on the surface of the semi-product thin film.

[0025] Further, in the step of simultaneously introducing a precursor and a carrier gas to generate a semi-product thin film: the introduction time of the precursor and the carrier gas is 0.05 to 1 s, and the flow rate is 6000 to 24000 sccm / m 2 ; and / or,

[0026] In the step of stopping introducing the precursor and performing a first plasma treatment on the semi-product thin film to modify the semi-product thin film: the flow rate of the carrier gas is 18000 to 72000 sccm / m 2 ; the radio frequency power of the first plasma treatment is 30 kW / m 2 ~120 kW / m 2 , and the radio frequency duration is 0.5 to 5 s; and / or;

[0027] In the step of re-introducing the precursor, where the precursor reacts with the semi-product film: the introduction time of the precursor is 0.05 to 1 s, and the flow rate is 6000 to 24000 sccm / m 2 .

[0028] Further, the step of removing the unreacted precursor specifically includes: evacuating the unreacted precursor, and the evacuation time is 0.2 to 5 s; and / or,

[0029] The step of removing the unreacted groups on the surface of the semi-product film specifically includes: introducing a reaction source, performing a second plasma treatment on the semi-product film, and evacuating after the treatment is completed. Among them, the introduction time of the reaction source is 0.2 to 10 s, and the flow rate is 6000 to 24000 sccm / m 2 ; the radio frequency power of the second plasma treatment is 30 kW / m 2 ~120 kW / m 2 , the radio frequency duration is 0.5 to 5 s; the evacuation time is 0.2 to 5 s.

[0030] Further, the thickness of the third seed layer is greater than or equal to the thickness of the second seed layer; optionally, when the thickness of the third seed layer is greater than the thickness of the second seed layer, the surface of the third seed layer close to the conductive layer is continuous and flat, and the surface of the third seed layer away from the conductive layer has a plurality of pits, and the island-shaped units fill the pits; optionally, when the thickness of the third seed layer is equal to the thickness of the second seed layer, the third seed layer has a plurality of holes, and the island-shaped units fill the holes;

[0031] and / or, the material of the second seed layer is the same as or different from that of the conductive layer; and / or,

[0032] The material of the second seed layer includes a second conductive metal; the second conductive metal includes one or more of silver, gold, platinum, and copper; and / or,

[0033] The average height of the island-shaped units is 0.3 nm to 3 nm; and / or,

[0034] The average diameter of the island-shaped units is 0.03 μm to 30 μm; and / or,

[0035] The interval between adjacent island-shaped units is 1 μm to 200 μm; and / or,

[0036] The material of the conductive layer is selected from one of silver, gold, platinum, and copper; and / or,

[0037] The thickness of the conductive layer is 3 to 12 nm.

[0038] Further, the material of the third seed layer is the same as or different from that of the first seed layer; and / or,

[0039] The thickness of the third seed layer is 0.3 to 20 nm; and / or,

[0040] The thickness of the first seed layer is 0.3 to 20 nm; and / or,

[0041] The material of the third seed layer includes one or more of a third conductive metal, a metal compound, and an organic compound;

[0042] The third conductive metal includes one or more of aluminum, copper, germanium, silver, platinum, and gold; and / or

[0043] The metal compound includes one or more of doped metal oxide particles, undoped metal oxide particles, ceramic semiconductor materials, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The metal oxides in the undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the doped metal oxide include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the doped metal oxide include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, and Sn. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS; and / or

[0044] The organic compound includes one or more of polyetherimide, TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, and polyaniline.

[0045] To solve the above technical problems, the embodiments of the present application further provide a composite electrode, adopting the following technical solutions:

[0046] A composite electrode, which is prepared by using the composite electrode preparation method as described above;

[0047] Alternatively, the composite electrode includes a first seed layer and a conductive layer which are stacked.

[0048] Further, the composite electrode further includes a second seed layer and a third seed layer. The second seed layer is disposed between the first seed layer and the conductive layer, and the third seed layer is disposed between the second seed layer and the conductive layer.

[0049] Among them, the second seed layer is a discontinuous seed layer; optionally, the second seed layer includes a plurality of island-shaped units arranged at intervals.

[0050] Further, the thickness of the third seed layer is greater than or equal to the thickness of the second seed layer; optionally, when the thickness of the third seed layer is greater than the thickness of the second seed layer, the surface of the third seed layer close to the conductive layer is continuous and flat, and the surface of the third seed layer far from the conductive layer has a plurality of pits, and the island-shaped units fill the pits; optionally, when the thickness of the third seed layer is equal to the thickness of the second seed layer, the third seed layer has a plurality of holes, and the island-shaped units fill the holes.

[0051] And / or, the material of the second seed layer is the same as or different from that of the conductive layer; and / or,

[0052] The material of the second seed layer includes a second conductive metal; the second conductive metal includes one or more of silver, gold, platinum, and copper; and / or,

[0053] The average height of the island-shaped units is 0.3 nm to 3 nm; and / or,

[0054] The average diameter of the island-shaped units is 0.03 μm to 30 μm; and / or,

[0055] The interval between adjacent island-shaped units is 1 μm to 200 μm; and / or,

[0056] The material of the conductive layer is selected from one of silver, gold, platinum, and copper; and / or,

[0057] The thickness of the conductive layer is 3 to 12 nm.

[0058] Further, the material of the third seed layer is the same as or different from that of the first seed layer; and / or,

[0059] The thickness of the third seed layer is 0.3 to 20 nm; and / or,

[0060] The thickness of the first seed layer is 0.3 to 20 nm; and / or,

[0061] The material of the third sub-layer includes one or more of a third conductive metal, a metal compound, and an organic compound;

[0062] The third conductive metal includes one or more of aluminum, copper, germanium, silver, platinum, and gold; and / or,

[0063] The metal compound includes one or more of doped metal oxide particles, undoped metal oxide particles, ceramic semiconductor materials, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The metal oxides in the undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the doped metal oxides include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the doped metal oxides include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, and Sn. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS; and / or,

[0064] The organic compound includes one or more of polyetherimide, TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, and polyaniline.

[0065] To solve the above technical problems, an embodiment of the present application further provides an optoelectronic device, which adopts the following technical solutions:

[0066] An optoelectronic device, the optoelectronic device includes the composite electrode as described above.

[0067] Compared with the prior art, the present application mainly has the following beneficial effects: The conductive layer of the composite electrode provided by the present application has good continuity, high transmittance, and low sheet resistance. Description of the Drawings

[0068] To more clearly illustrate the solution of this application, the following will give a brief introduction to the drawings required for the description of the embodiments. Obviously, the drawings in the following description are some embodiments of this application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0069] Figure 1 is a flowchart of an embodiment of the preparation method of the composite electrode according to this application;

[0070] Figure 2 is a flowchart of the atomic layer deposition method;

[0071] Figure 3 is Figure 1 a schematic diagram of the preparation process of an embodiment of step S20 in

[0072] Figure 4 is Figure 1 a schematic diagram of the preparation process of another embodiment of step S20 in

[0073] Figure 5 is a schematic diagram of an embodiment of the composite electrode according to this application.

[0074] Reference numerals: 1, the first seed layer; 2, the second seed layer; 3, the third seed layer; 4, the conductive layer. Detailed embodiments

[0075] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field of this application; the terms used in the description of the application in this specification are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above drawings are intended to cover non-exclusive inclusion. The terms "first", "second", etc. in the specification and claims of this application or the above drawings are used to distinguish different objects and not to describe a specific order.

[0076] Referring to "embodiment" herein means that the specific features, structures or characteristics described in connection with the embodiment can be included in at least one embodiment of this application. The appearance of this phrase at various positions in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0077] In order to enable those skilled in the technical field to better understand the solution of this application, the following will clearly and completely describe the technical solutions in the embodiments of this application with reference to the drawings.

[0078] In the prior art, when thinning the conductive layer, the reason for the significant increase in its resistance value is that under general deposition conditions, the conductive layer has a threshold thickness. When the thickness is lower than this value, the conductive layer is in a non - continuous and flat film form. Such a form will impede the passage of current, thereby increasing the resistance. Moreover, due to the conductive layer having multiple island - shaped units arranged at intervals, the plasmon polariton effect generated when light passes through the conductive layer is enhanced, making it easy to absorb the light intensity in some light bands, and further reducing the transmittance of the conductive layer.

[0079] An embodiment of the present application provides a method for preparing a composite film, as Figure 1 shown, the method includes the following steps:

[0080] S10. Form a first seed layer by atomic layer deposition;

[0081] S20. Deposit a conductive layer on the first seed layer to obtain a composite electrode.

[0082] In this embodiment, first, a first seed layer is formed by atomic layer deposition, and then a conductive layer is deposited on the first seed layer to obtain a composite electrode. The first seed layer prepared by atomic layer deposition has a relatively dense film quality, a low defect density, and strong controllability of the film thickness, so as to provide more nucleation sites for the deposition of the conductive layer. The metal atoms of the conductive layer can aggregate on the nucleation sites, thereby forming more and uniformly distributed nucleation particles, making the conductive layer prepared on the first seed layer in a continuous film form, reducing the path length of current flow, reducing the resistance, and thus achieving the purpose of further reducing the thickness of the conductive layer without increasing its resistance value.

[0083] In this embodiment, the first seed layer is formed on a substrate.

[0084] Further, the substrate is selected from one of a rigid substrate or a flexible substrate. The materials of the rigid substrate include ceramics and glass, and the materials of the flexible substrate include polyimide film and its derivatives, polyethylene naphthalate, PEP (phosphoenolpyruvate), and polyphenylene ether resin. The substrate can also be a substrate containing various optoelectronic devices and to which electrode deposition is to be performed.

[0085] Further, the step of depositing a conductive layer on the first seed layer includes:

[0086] Prepare a second seed layer on the first seed layer;

[0087] Prepare a third seed layer on the second seed layer;

[0088] Deposit a conductive layer on the third seed layer;

[0089] Among them, the second seed layer is a discontinuous seed layer.

[0090] In this embodiment, the second seed layer and the third seed layer can be prepared by means of magnetron sputtering, evaporation coating, chemical vapor deposition, atomic layer deposition, molecular layer deposition, inkjet printing, etc.

[0091] In this embodiment, since the second seed layer is a discontinuous seed layer, the surface of the second seed layer close to the conductive layer is a discontinuous surface, which not only has a large surface area, but also reduces the distance between the second seed layer and the conductive layer, making it easier for the metal particles used to prepare the conductive layer to form van der Waals attraction with the second seed layer, thereby effectively improving the speed of forming a continuous thin film of the conductive layer, and further enabling the conductive layer to form a highly continuous metal thin film when the thickness is relatively thin.

[0092] Optionally, the second seed layer includes a plurality of island-shaped units arranged at intervals.

[0093] Optionally, at least one of the second seed layer and the third seed layer is formed by atomic layer deposition

[0094] In this embodiment, the third seed layer is prepared by atomic layer deposition, having a relatively dense film quality to provide more nucleation sites for the deposition of the conductive layer. The metal atoms of the conductive layer can gather on the nucleation sites, thereby forming more and uniformly distributed nucleation particles, further making the conductive layer in the form of a continuous thin film, reducing the path length of the current flow, lowering the resistance, and thus achieving the purpose of further reducing the thickness of the conductive layer without increasing its resistance value.

[0095] In this embodiment, the second seed layer is prepared by atomic layer deposition and is used to cooperate with the first seed layer and the third seed layer to further improve the diffusion ability of the conductive layer and enable the conductive layer to quickly form a continuous thin film; furthermore, the second seed layer has a certain van der Waals attraction during the deposition of the conductive layer, which can also effectively improve the speed of forming a continuous thin film of the conductive layer.

[0096] As Figure 2 shown, further, the steps of using the atomic layer deposition method specifically include:

[0097] S21. Simultaneously introduce a precursor and a carrier gas to generate a semi-product thin film;

[0098] S22. Stop the introduction of the precursor and perform a first plasma treatment on the semi-product thin film to modify the semi-product thin film;

[0099] S23. Reintroduce the precursor, and the precursor reacts with the semi-product thin film to obtain the first seed layer, the second seed layer or the third seed layer.

[0100] In this embodiment, in step S20, the carrier gas is continuously introduced, which is beneficial to the rapid introduction of the precursor to accelerate the deposition rate; in step S21, the precursor usually dissociates a group and adsorbs on the substrate or the upper film layer, which is chemical adsorption and there is also a part of physical adsorption. In this process, there will be chemical bonds with relatively weak adsorption or particles with relatively weak physical adsorption; therefore, in step S22, using its strong plasma bombardment ability, the relatively weak chemical bonds or particles with relatively weak physical adsorption in step S21 are removed, leaving more sites that can be provided for the adsorption of the precursor introduced in step S23; in step S23, the precursor introduced again fills the adsorption sites that were not effectively occupied during the first introduction, thereby increasing the adsorption density of the precursor and being beneficial to improving the compactness of the film layer; the increase in the density of the film layer is beneficial to the continuous deposition of the conductive layer.

[0101] In this embodiment, in step S21, the precursor and the carrier gas are simultaneously introduced into the film-forming chamber.

[0102] Further, the step of obtaining the first seed layer, the second seed layer or the third seed layer includes: repeating steps S21 to S23 at least once until the first seed layer, the second seed layer or the third seed layer with a target thickness is obtained.

[0103] In this embodiment, the number of times of repeating steps S21 to S23 is 2 to 35 times.

[0104] In some alternative embodiments of this embodiment, the number of times of repeating steps S21 to S23 is any one of 2, 5, 10, 15, 20, 25, 30, 35, etc. or the range between any two of them.

[0105] In this embodiment, the target thickness is 0.3 to 5 nm.

[0106] In some alternative embodiments of this embodiment, the target thickness is any one of 0.3 nm, 1 nm, 1.5 nm, 2 nm, 2.5 nm, 3 nm, 3.5 nm, 4 nm, 4.5 nm, 5 nm, etc. or the range between any two of them.

[0107] Further, before repeating steps S21 to S23 at least once, it further includes:

[0108] Removing the unreacted precursor;

[0109] Removing the unreacted groups on the surface of the semi-product film.

[0110] In this embodiment, the unreacted precursor and the unreacted groups on the surface of the semi-product film are removed respectively through the above steps to avoid the residual precursor and groups from affecting the repeated steps S21 to S23, so as to facilitate the growth of the first seed layer, the second seed layer or the third seed layer.

[0111] In this embodiment, removing the unreacted precursor specifically includes removing the unreacted precursor in the film forming chamber.

[0112] Furthermore, in the step of simultaneously introducing the precursor and the carrier gas to form a semi-product film: the introduction time of the precursor and the carrier gas is 0.05 to 1 s, and the flow rate is 6000 to 24000 sccm / m 2 .

[0113] In some optional implementations of this embodiment, the introduction time of the precursor and the carrier gas is any one of 0.05s, 0.1s, 0.2s, 0.3s, 0.4s, 0.5s, 0.6s, 0.7s, 0.8s, 0.9s, 1s, etc., or a range between any two of them.

[0114] In some optional implementations of this embodiment, the flow rate of the precursor and the carrier gas is 6000 sccm / m 2 、8000sccm / m 2 、10000sccm / m 2 、12000sccm / m 2 、14000sccm / m 2 、16000sccm / m 2 、18000sccm / m 2 、20000sccm / m 2 、24000sccm / m 2 Any one of the above or the range between any two of them.

[0115] Furthermore, in the step of stopping the introduction of the precursor and performing a first plasma treatment on the semi-product film to modify the semi-product film: the flow rate of the carrier gas is 18000 to 72000 sccm / m 2 The radio frequency power of the first plasma treatment is 30kW / m 2 ~120kW / m 2 , the RF duration is 0.5 to 5 seconds.

[0116] In some optional implementations of this embodiment, the flow rate of the carrier gas is 18000 sccm / m 2 、20000sccm / m 2 、25000sccm / m2 、30,000 sccm / m 2 、35,000 sccm / m 2 、40,000 sccm / m 2 、45,000 sccm / m 2 、50,000 sccm / m 2 、55,000 sccm / m 2 、60,000 sccm / m 2 、65,000 sccm / m 2 、70,000 sccm / m 2 、72,000 sccm / m 2 and the range between any one or any two of the above.

[0117] In some alternative embodiments of the present embodiment, the RF power of the first plasma treatment is 30 kW / m 2 、40 kW / m 2 、50 kW / m 2 、60 kW / m 2 、70 kW / m 2 、80 kW / m 2 、90 kW / m 2 、100 kW / m 2 、110 kW / m 2 、120 kW / m 2 and the range between any one or any two of the above.

[0118] In some alternative embodiments of the present embodiment, the RF duration of the first plasma treatment is in the range between any one or any two of 0.5 s, 1 s, 1.5 s, 2 s, 2.5 s, 3 s, 3.5 s, 4 s, 4.5 s, 5 s, etc.

[0119] Furthermore, in the step of re-introducing the precursor and reacting the precursor with the semi-product film: the introduction time of the precursor is 0.05 - 1 s, and the flow rate is 6,000 - 24,000 sccm / m 2 .

[0120] In some alternative embodiments of the present embodiment, the introduction time of the precursor is in the range between any one or any two of 0.05 s, 0.1 s, 0.2 s, 0.3 s, 0.4 s, 0.5 s, 0.6 s, 0.7 s, 0.8 s, 0.9 s, 1 s, etc.

[0121] In some alternative embodiments of the present embodiment, the flow rate of the precursor is 6,000 sccm / m 2 、8,000 sccm / m2 、10,000 sccm / m 2 、12,000 sccm / m 2 、14,000 sccm / m 2 、16,000 sccm / m 2 、18,000 sccm / m 2 、20,000 sccm / m 2 、24,000 sccm / m 2 or any range between any one and any two of the above.

[0122] Furthermore, the step of removing the unreacted precursor specifically includes: pumping away the unreacted precursor, and the pumping time is 0.2 - 5 s.

[0123] In some alternative embodiments of this embodiment, the pumping time is in the range of any one or any two of 0.1 s, 1 s, 1.5 s, 2 s, 2.5 s, 3 s, 3.5 s, 4 s, 4.5 s, 5 s, etc.

[0124] In this embodiment, the step of pumping away the unreacted precursor specifically is: pumping away the unreacted precursor in the film - forming chamber.

[0125] Furthermore, the step of removing the unreacted groups on the surface of the semi - product film specifically includes: introducing a reaction source, performing a second plasma treatment on the semi - product film, and pumping air after the treatment is completed. Among them, the introduction time of the reaction source is 0.2 - 10 s, and the flow rate is 6,000 - 24,000 sccm / m 2 ; the radio - frequency power of the second plasma treatment is 30 kW / m 2 ~120 kW / m 2 , the radio - frequency duration is 0.5 - 5 s; the pumping time is 0.2 - 5 s.

[0126] In this embodiment, when introducing the reaction source and performing the second plasma treatment on the semi - product film, the plasma of the reaction source will remove the groups in the precursor adsorbed on the substrate or the upper film layer; after the treatment is completed, pumping air is performed to remove the excess reaction source.

[0127] In some alternative embodiments of this embodiment, the introduction time of the reaction source is in the range of any one or any two of 0.2 s, 1 s, 2 s, 3 s, 4 s, 5 s, 6 s, 7 s, 8 s, 9 s, 10 s, etc.

[0128] In some alternative embodiments of this embodiment, the flow rate of the reaction source is 6,000 sccm / m 2 、8,000 sccm / m 2, 10000 sccm / m 2 , 12000 sccm / m 2 , 14000 sccm / m 2 , 16000 sccm / m 2 , 18000 sccm / m 2 , 20000 sccm / m 2 , 24000 sccm / m 2 The range between any one or any two of the above.

[0129] In some alternative embodiments of this example, the RF power of the second plasma treatment is 30 kW / m 2 , 40 kW / m 2 , 50 kW / m 2 , 60 kW / m 2 , 70 kW / m 2 , 80 kW / m 2 , 90 kW / m 2 , 100 kW / m 2 , 110 kW / m 2 , 120 kW / m 2 The range between any one or any two of the above.

[0130] In some alternative embodiments of this example, the pumping time is in the range between any one or any two of 0.1 s, 1 s, 1.5 s, 2 s, 2.5 s, 3 s, 3.5 s, 4 s, 4.5 s, 5 s, etc.

[0131] See Figure 3 , in one example, except for the first stage: steps S21 - S23, in the second stage: the step of removing the unreacted precursor, in the third stage: introducing the reaction source and performing the second plasma treatment on the semi-product film, and in the fourth stage: the step of pumping after the treatment is completed, the introduction of the carrier gas is maintained throughout. This is beneficial for quickly replacing the reactants of the previous step and quickly introducing the reactants of the next step, so as to accelerate the deposition rate.

[0132] See Figure 4 , in another example, except for the first stage: steps S21 - S23, in the second stage: the step of removing the unreacted precursor, and in the third stage: the step of introducing the reaction source and performing the second plasma treatment on the semi-product film, the introduction of the carrier gas is still maintained; in this example, the carrier gas has the function of bringing in the precursor.

[0133] Further, the precursor is one of aluminum acetylacetonate, dimethylaluminum amide, triisobutylaluminum, triethylaluminum, trimethylaluminum, molybdenum hexafluoride, molybdenum hexacarbonyl, copper perfluoropyruvate, copper acetylacetonate, tetramethylgermanium, zinc ethanolate, titanium tetrapyruvate, pentaacetyl compound, vanadium succinate, tungsten hexacarbonyl, triisopropylaluminum or trimethylgallium.

[0134] In this embodiment, when the precursor is one of aluminum acetylacetonate, dimethylaluminum amide, triisobutylaluminum, triethylaluminum, and trimethylaluminum, the first seed layer, the second seed layer, or the third seed layer prepared is an aluminum film; when the precursor is one of molybdenum hexafluoride and molybdenum hexacarbonyl, the first seed layer, the second seed layer, or the third seed layer prepared is a molybdenum fluoride film; when the precursor is one of copper perfluoropyruvate and copper acetylacetonate, the first seed layer, the second seed layer, or the third seed layer prepared is a copper film; when the precursor is tetramethylgermanium, the first seed layer, the second seed layer, or the third seed layer prepared is a germanium film; when the precursor is zinc ethanolate, the first seed layer, the second seed layer, or the third seed layer prepared is a zinc oxide film; when the precursor is titanium tetrapyruvate, the first seed layer, the second seed layer, or the third seed layer prepared is a titanium oxide film; when the precursor is a pentaacetyl compound, the first seed layer, the second seed layer, or the third seed layer prepared is a niobium oxide film; when the precursor is vanadium succinate, the first seed layer, the second seed layer, or the third seed layer prepared is a vanadium oxide film; when the precursor is tungsten hexacarbonyl, the first seed layer, the second seed layer, or the third seed layer prepared is a tungsten oxide film; when the precursor is triisopropylaluminum, the first seed layer, the second seed layer, or the third seed layer prepared is an aluminum oxide film; when the precursor is trimethylgallium, the first seed layer, the second seed layer, or the third seed layer prepared is a gallium oxide film.

[0135] Specifically, the precursor is trimethylaluminum; in step S20, trimethylaluminum usually dissociates a methyl group (-CH3) and adsorbs on the substrate and the semi-product film.

[0136] Further, the carrier gas is one of He, N2, Ne, or Ar.

[0137] In this embodiment, the reaction activity of the carrier gas is low, and it is not easy to chemically react with the precursor and the substrate, which helps to maintain the stability of the deposition process and reduce the generation of unexpected reaction products.

[0138] Specifically, the carrier gas is Ar.

[0139] Further, the reaction source is a reducing gas.

[0140] Specifically, the reaction source is selected from H2.

[0141] In this embodiment, the plasma of H2 removes the methyl group (-CH3) of the precursor adsorbed on the surface of the semi-product film.

[0142] Furthermore, the thickness of the third seed layer is greater than or equal to the thickness of the second seed layer.

[0143] Furthermore, in some embodiments, when the thickness of the third seed layer is greater than the thickness of the second seed layer, the surface of the third seed layer close to the conductive layer is continuous and flat, and the surface of the third seed layer away from the conductive layer has a plurality of pits, and the island units fill the pits.

[0144] Please refer to Figure 5 , in some other embodiments, when the thickness of the third seed layer is equal to the thickness of the second seed layer, the third seed layer has a plurality of holes, and the island units fill the holes. It can be understood that at this time, the third seed layer is a discontinuous structure, spliced side by side with the island units, and both the second seed layer and the third seed layer are in contact with the conductive layer. Thus, when setting the conductive layer, the second seed layer has a van der Waals attraction to the conductive layer, effectively improving the speed of forming a continuous film of the conductive layer.

[0145] Furthermore, the material of the second seed layer is the same as or different from that of the conductive layer.

[0146] In this embodiment, the material of the second seed layer is the same as that of the conductive layer, and the second seed layer is a discontinuous seed layer, whose function is to cooperate with the first seed layer and the third seed layer to further improve the diffusion ability of the conductive layer and enable the conductive layer to quickly form a continuous film.

[0147] Furthermore, the material of the second seed layer includes a second conductive metal; the second conductive metal includes one or more of silver, gold, platinum, and copper.

[0148] Furthermore, the average height of the island units is 0.3 nm to 3 nm.

[0149] In some alternative embodiments of this embodiment, the average height of the island units is any one or the range between any two of 0.3 nm, 0.5 nm, 1 nm, 1.5 nm, 2 nm, 2.5 nm, 2.7 nm, 3 nm, etc.

[0150] Furthermore, the average diameter of the island units is 0.03 μm to 30 μm.

[0151] In some alternative embodiments of the present embodiment, the average diameter of the island-shaped unit is any one of 0.03 μm, 1 μm, 5 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, etc., or within the range between any two of them. It should be noted that the shape of the orthographic projection of the island-shaped unit on the conductive layer can be circular, elliptical, oval, rounded square, rounded rhombus, etc. The average diameter of the island-shaped unit is the ratio of the perimeter of the orthographic projection of the island-shaped unit on the first seed layer to Π.

[0152] Further, the spacing between adjacent island-shaped units is 1 μm to 200 μm.

[0153] In some alternative embodiments of the present embodiment, the spacing between adjacent island-shaped units is any one of 1 μm, 5 μm, 10 μm, 20 μm, 50 μm, 80 μm, 100 μm, 120 μm, 150 μm, 180 μm, 200 μm, etc., or within the range between any two of them. It can be understood that the spacing between adjacent island-shaped units refers to the shortest straight-line distance between one island-shaped unit and other island-shaped units.

[0154] Further, the material of the third seed layer is the same as or different from that of the first seed layer.

[0155] Further, the material of the third seed layer includes one or several of a third conductive metal, a metal compound, and an organic compound;

[0156] The third conductive metal includes one or several of aluminum, copper, germanium, silver, platinum, and gold; and / or

[0157] The metal compound includes one or more of doped metal oxide particles, undoped metal oxide particles, ceramic semiconductor materials, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The metal oxides in the undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the doped metal oxides include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the doped metal oxides include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, and Sn. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS; and / or

[0158] The organic compound includes one or more of polyetherimide, TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, and polyaniline.

[0159] Furthermore, the thickness of the third seed layer is 0.3 - 20 nm.

[0160] In some alternative embodiments of the present embodiment, the thickness of the third seed layer is any one of 0.3 nm, 1 nm, 2 nm, 4 nm, 6 nm, 8 nm, 10 nm, 12 nm, 14 nm, 16 nm, 18 nm, 20 nm, etc., or within the range between any two of them.

[0161] Furthermore, the thickness of the first seed layer is 0.3 - 20 nm.

[0162] In some alternative embodiments of the present embodiment, the thickness of the first seed layer is any one of 0.3 nm, 1 nm, 2 nm, 4 nm, 6 nm, 8 nm, 10 nm, 12 nm, 14 nm, 16 nm, 18 nm, 20 nm, etc., or within the range between any two of them.

[0163] Furthermore, the material of the first seed layer includes one or more of a first conductive metal and a metal compound;

[0164] The first conductive metal includes one or more of aluminum, copper, germanium, silver, platinum, and gold; and / or

[0165] The metal compound includes one or more of doped metal oxide particles, undoped metal oxide particles, ceramic semiconductor materials, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The metal oxides in the undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5. The metal oxides in the doped metal oxide include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3. The doping elements in the doped metal oxide include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Sn. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS. The IIIA-VA group semiconductor materials include one or more of InP, GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS.

[0166] Further, the material of the conductive layer is selected from one of silver, gold, platinum, and copper.

[0167] Further, the thickness of the conductive layer is 3 - 12 nm.

[0168] In some alternative embodiments of this embodiment, the thickness of the conductive layer is any one of 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm or the range between any two of them.

[0169] The above scheme will be further described below in conjunction with specific implementation examples. The preferred embodiments of the present invention are described in detail as follows:

[0170] Comparative Example 1:

[0171] A conductive layer is prepared on the substrate.

[0172] Comparative Example 2:

[0173] The difference from Comparative Example 1 is that a first seed layer is also prepared under the conductive layer, and the first seed layer is prepared by an evaporation process.

[0174] Comparative Example 3:

[0175] The difference from Comparative Example 2 is that a second seed layer and a third seed layer are provided between the first seed layer and the conductive layer, and both the second seed layer and the third seed layer are prepared by an evaporation process.

[0176] Example 1:

[0177] It is different from Comparative Example 2 in that the first seed layer is prepared by the atomic layer deposition method described as follows;

[0178] Atomic layer deposition method:

[0179] S1. Transfer the substrate into the film deposition chamber;

[0180] By means of a vacuum manipulator, manual transfer, etc., place the substrate to be prepared with a composite electrode in the chamber of atomic layer deposition. The substrate can be a substrate containing various optoelectronic devices and to be deposited with an electrode.

[0181] S2. Form a first seed layer on the substrate.

[0182] Using the atomic layer deposition method, complete the coating of the first seed layer on the substrate with a thickness of 1 nm, keep the chamber pressure at 0.3 Torr and the substrate spacing at 25 mm. The specific deposition steps and process parameters are as follows:

[0183] In the first step, introduce an organometallic source / precursor to cause a chemical reaction of surface adsorption between the organic source and the substrate. When depositing an aluminum film, TMA (trimethylaluminum) can be used, and at the same time, Ar is used as a carrier gas to bring the TMA in the cylinder into the chamber. The introduction time is 0.2 s, and the flow rate is about 6000 sccm / m 2 ;

[0184] In this process, the TMA usually dissociates a methyl group (-CH3) and adsorbs on the substrate. This is chemisorption, but there is also a part of physical adsorption. In this process, there are often chemical bonds with weak adsorption or particles with weak physical adsorption;

[0185] In the second step, the pumping process. Stop the introduction of TMA, but keep the introduction of Ar. While Ar is flowing, TMA will be pumped away, leaving only Ar that does not participate in the reaction in the chamber environment, and only the reactive TMA adsorbed on the substrate and the chamber wall is retained; the pumping time is about 0.5 s;

[0186] In the third step, introduce a reaction source, introduce a reducing gas reaction source. In the present invention, H2 is used as the reaction source, and the flow rate is about 10000 sccm / m 2 , and the introduction time is about 5 s;

[0187] In the fourth step, generate reaction plasma. After H2 is introduced into the chamber, apply radio frequency power to the electrode plate of the reaction chamber, and the power is about 30 kW / m2 to 120 kW / m2, and the duration is about 4.5 s;

[0188] During this process, the plasma of the reducing gas reaction source (H2) will remove the methyl groups (-CH3) in the precursor TMA adsorbed on the substrate, leaving only Al atoms and a small amount of impurities on the substrate, thus completing the deposition of the atomic layer Al film;

[0189] Step 5: The pumping process. Similar to the second step, the pumping time is about 2 s;

[0190] Repeat steps 1 to 5 for 21 times to obtain the first seed layer (aluminum film) with a thickness of about 1 nm.

[0191] Example 2:

[0192] The difference from Example 1 is that the following steps are added between the first step and the second step of the atomic layer deposition method:

[0193] Keep the carrier gas Ar flowing, increase the Ar flow rate, stop the flow of the precursor TMA, apply the RF power, and perform the Ar plasma treatment; the Ar flow rate is about 8500 sccm / m 2 ; the RF power is about 40 kW / m2. The RF duration is about 1 s;

[0194] During this process, the Ar plasma can use its strong plasma bombardment ability to knock off the weaker chemical bonds or particles with weaker physical adsorption in the first step, leaving more sites available for the TMA precursor introduced in the third step to adsorb, thereby improving the adsorption density of the precursor in an atomic layer deposition cycle and facilitating the improvement of the density of the overall atomic layer film.

[0195] Use Ar as the carrier gas and introduce the precursor TMA again for 0.2 s with a flow rate of about 6000 sccm / m 2 ;

[0196] During this process, the second introduction of the precursor TMA will fill in the adsorption sites that were not effectively occupied during the first introduction, thus facilitating the improvement of the density of the atomic layer deposition film.

[0197] Example 3:

[0198] The difference from Example 2 is that a second seed layer and a third seed layer are provided between the first seed layer and the conductive layer. The second seed layer is prepared by the atomic layer deposition method shown in Example 1, and the third seed layer is prepared using the evaporation process during preparation.

[0199] Example 4:

[0200] The difference from Example 3 is that the third seed layer is prepared by the atomic layer deposition method shown in Example 1.

[0201] Example 5:

[0202] It is different from Example 4 in that both the second seed layer and the third seed layer are prepared by the atomic layer deposition method shown in Example 1.

[0203] Experimental test analysis: The composite electrodes prepared in Examples 1 to 5 and Comparative Examples 1 to 3 were tested, and the analysis results and the structures of the composite electrodes are shown in Table 1.

[0204] Table 1

[0205]

[0206]

[0207] In Table 1, the transmittance and sheet resistance of Example 1 are both better than those of Comparative Example 2, indicating that the first seed layer prepared by atomic layer deposition has a denser film quality, a low defect density, and strong controllability of film thickness, so as to provide more nucleation sites for the deposition of the conductive layer. The metal atoms of the conductive layer can aggregate on the nucleation sites, thereby forming more and evenly distributed nucleation particles, making the conductive layer prepared on the first seed layer in a continuous film form, reducing the path length of current flow, reducing the resistance, and thus achieving the purpose of further reducing the thickness of the conductive layer without increasing its resistance value.

[0208] In Table 1, the transmittance and sheet resistance of Example 2 are both better than those of Example 1, indicating that by using its strong plasma bombardment ability, the weaker chemical bonds or particles with weaker physical adsorption during the first introduction of the precursor are removed, leaving more sites that can be provided for the second introduction of the precursor for adsorption; and then the precursor is introduced again to fill the unoccupied adsorption sites completely, thereby increasing the adsorption density of the precursor, which is beneficial to improving the denseness of the seed film; the increase in the density of the seed layer is beneficial to the continuous deposition of the conductive layer.

[0209] In Table 1, the transmittance and sheet resistance of Example 5 are both better than those of Examples 2 to 4 and Comparative Example 3; it shows that the third seed layer provides more nucleation sites for the deposition of the conductive layer, and the metal atoms of the conductive layer can aggregate on the nucleation sites, thereby forming more and evenly distributed nucleation particles, further making the conductive layer prepared on the third seed layer in a continuous film form, reducing the path length of current flow, reducing the resistance, and thus achieving the purpose of further reducing the thickness of the conductive layer without increasing its resistance value; while the second seed layer is used to cooperate with the first seed layer and the third seed layer to further improve the diffusion ability of the conductive layer and enable the conductive layer to quickly form a continuous film.

[0210] The embodiment of the present application also provides a composite electrode, which is prepared by using the composite electrode preparation method as described above; or, as Figure 5 shown, the composite electrode includes a first seed layer 1 and a conductive layer 4 which are stacked.

[0211] In this embodiment, the first seed layer prepared by atomic layer deposition has a relatively dense film quality, a low defect density, and strong controllability of film thickness, so as to provide more nucleation sites for the deposition of the conductive layer. The metal atoms of the conductive layer can accumulate on the nucleation sites, thereby forming more and uniformly distributed nucleation particles, making the conductive layer prepared on the seed layer in a continuous thin film form, reducing the path length of current flow, reducing the resistance, and thus achieving the purpose of further reducing the thickness of the conductive layer without increasing its resistance value.

[0212] Further, the composite electrode further includes a second seed layer 2 and a third seed layer 3. The second seed layer 2 is disposed between the first seed layer 1 and the conductive layer 4, and the third seed layer 3 is disposed between the second seed layer 2 and the conductive layer 4;

[0213] Wherein, the second seed layer 2 is a discontinuous seed layer.

[0214] In this embodiment, since the second seed layer 2 is a discontinuous seed layer, the surface of the second seed layer 2 close to the conductive layer 4 is a discontinuous surface, which not only has a large surface area, but also reduces the distance between the second seed layer 2 and the conductive layer 4. The metal particles of the conductive layer 4 are more likely to form van der Waals attraction with the second seed layer 2, thereby effectively improving the speed of forming a continuous thin film of the conductive layer 4, and further enabling the conductive layer 4 to form a highly continuous metal thin film when the thickness is relatively thin.

[0215] Optionally, the second seed layer 2 includes a plurality of island units arranged at intervals.

[0216] Further, the thickness of the third seed layer 3 is greater than or equal to the thickness of the second seed layer 2.

[0217] Further, in some embodiments, when the thickness of the third seed layer 3 is greater than the thickness of the second seed layer 2, the surface of the third seed layer 3 close to the conductive layer 4 is continuous and flat, and the surface of the third seed layer 3 away from the conductive layer 4 has a plurality of pits, and the island units fill the pits.

[0218] Please refer to Figure 5, in some other embodiments, when the thickness of the third seed layer 3 is equal to the thickness of the second seed layer 2, the third seed layer 3 has a plurality of holes, and the island units fill the holes. It can be understood that at this time, the third seed layer 3 is a discontinuous structure, spliced side by side with the island units, and both the second seed layer 2 and the third seed layer 3 are in contact with the conductive layer 4. In this way, when setting the conductive layer 4, the second seed layer 2 has a van der Waals attraction to the conductive layer 4, effectively improving the speed of forming a continuous thin film of the conductive layer 4.

[0219] Further, the materials of the second seed layer 2 and the conductive layer 4 are the same or different.

[0220] In this embodiment, the materials of the second seed layer 2 and the conductive layer 4 are the same. The second seed layer is a discontinuous seed layer, and its function is to cooperate with the first seed layer 1 and the third seed layer 3 to further improve the diffusion ability of the conductive layer 4 and enable the conductive layer 4 to quickly form a continuous thin film.

[0221] Further, the material of the second seed layer 2 includes a second conductive metal; the second conductive metal includes one or more of silver, gold, platinum, and copper.

[0222] Further, the average height of the island units is 0.3 nm to 3 nm.

[0223] In some alternative embodiments of this embodiment, the average height of the island units is any one or the range between any two of 0.3 nm, 0.5 nm, 1 nm, 1.5 nm, 2 nm, 2.5 nm, 2.7 nm, 3 nm, etc.

[0224] Further, the average diameter of the island units is 0.03 μm to 30 μm.

[0225] In some alternative embodiments of this embodiment, the average diameter of the island units is any one or the range between any two of 0.03 μm, 1 μm, 5 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, etc. It should be noted that the shape of the orthographic projection of the island units on the conductive layer can be circular, elliptical, oval, rounded square, rounded rhombus, etc., and the average diameter of the island units is the ratio of the perimeter of the orthographic projection of the island units on the first seed layer to Π.

[0226] Further, the interval between adjacent island units is 1 μm to 200 μm.

[0227] In some alternative embodiments of the present embodiment, the spacing between adjacent island units is any one or the range between any two of 1 μm, 5 μm, 10 μm, 20 μm, 50 μm, 80 μm, 100 μm, 120 μm, 150 μm, 180 μm, 200 μm, etc. It can be understood that the spacing between adjacent island units refers to the shortest straight-line distance between one island unit and other island units.

[0228] Further, the material of the conductive layer 4 is selected from one of silver, gold, platinum, and copper.

[0229] Further, the thickness of the conductive layer 4 is 3 - 12 nm.

[0230] In some alternative embodiments of the present embodiment, the thickness of the conductive layer 4 is any one or the range between any two of 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, etc.

[0231] Further, the material of the third seed layer 3 is the same as or different from that of the first seed layer 1.

[0232] Further, the material of the third seed layer 3 includes one or several of a third conductive metal, a metal compound, and an organic compound;

[0233] The third conductive metal includes one or several of aluminum, copper, germanium, silver, platinum, and gold; and / or,

[0234] The metal compound includes one or more of doped metal oxide particles, undoped metal oxide particles, ceramic semiconductor materials, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The metal oxides in the undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5. The metal oxides in the doped metal oxides include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3. The doping elements in the doped metal oxides include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Sn. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS. The IIIA-VA group semiconductor materials include one or more of InP, GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS; and / or

[0235] The organic compound includes one or more of polyetherimide, TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, and polyaniline.

[0236] Further, the thickness of the third seed layer 3 is 0.3 - 20 nm.

[0237] In some alternative embodiments of the present embodiment, the thickness of the third seed layer 3 is any one of 0.3 nm, 1 nm, 2 nm, 4 nm, 6 nm, 8 nm, 10 nm, 12 nm, 14 nm, 16 nm, 18 nm, 20 nm, etc., or in the range between any two of them.

[0238] Further, the thickness of the first seed layer 1 is 0.3 - 20 nm.

[0239] In some alternative embodiments of the present embodiment, the thickness of the first seed layer 1 is any one of 0.3 nm, 1 nm, 2 nm, 4 nm, 6 nm, 8 nm, 10 nm, 12 nm, 14 nm, 16 nm, 18 nm, 20 nm, etc., or in the range between any two of them.

[0240] Further, the material of the first seed layer 1 includes one or more of a first conductive metal and a metal compound;

[0241] The first conductive metal includes one or more of aluminum, copper, germanium, silver, platinum, and gold; and / or

[0242] The metal compound includes one or more of doped metal oxide particles, undoped metal oxide particles, ceramic semiconductor materials, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The metal oxides in the undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5. The metal oxides in the doped metal oxide include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3. The doping elements in the doped metal oxide include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Sn. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS. The IIIA-VA group semiconductor materials include one or more of InP, GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS.

[0243] An embodiment of the present application further provides an optoelectronic device, and the optoelectronic device includes the composite electrode as described above.

[0244] In this embodiment, the first seed layer provides more nucleation sites for the deposition of the conductive layer. The metal atoms of the conductive layer can aggregate on the nucleation sites, thereby forming more and evenly distributed nucleation particles, making the conductive layer prepared on the seed layer in a continuous thin film form, reducing the path length of the current flow, reducing the resistance, and thus achieving the purpose of further reducing the thickness of the conductive layer without increasing its resistance value.

[0245] Obviously, the embodiments described above are only a part of the embodiments of the present application, rather than all the embodiments. The drawings show the preferred embodiments of the present application, but do not limit the patent scope of the present application. The present application can be implemented in many different forms. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosed content of the present application more thorough and comprehensive. Although the present application has been described in detail with reference to the foregoing embodiments, for those skilled in the art, they can still modify the technical solutions recorded in the foregoing specific embodiments, or perform equivalent replacements on some of the technical features. Any equivalent structure directly or indirectly using the content of the specification and drawings of the present application in other related technical fields is similarly within the scope of the patent protection of the present application.

Claims

1. A method for preparing a composite electrode, characterized in that, The method includes the following steps: Form a first seed layer by atomic layer deposition; Deposit a conductive layer on the first seed layer to obtain the composite electrode.

2. The preparation method of the composite electrode according to claim 1, characterized in that, The step of depositing the conductive layer on the first seed layer includes: Prepare a second seed layer on the first seed layer; Prepare a third seed layer on the second seed layer; Deposit a conductive layer on the third seed layer; Wherein, the second seed layer is a discontinuous seed layer; optionally, the second seed layer includes a plurality of island units arranged at intervals; Optionally, at least one of the second seed layer and the third seed layer is formed by atomic layer deposition.

3. The preparation method of the composite electrode according to claim 1 or 2, characterized in that, The step of using atomic layer deposition specifically includes: S21. Simultaneously introduce a precursor and a carrier gas to generate a semi-product thin film; S22. Stop introducing the precursor and perform a first plasma treatment on the semi-product thin film to modify the semi-product thin film; S23. Introduce the precursor again, and the precursor reacts with the semi-product thin film to obtain the first seed layer, the second seed layer or the third seed layer.

4. The preparation method of the composite electrode according to claim 3, characterized in that, The precursor is one of aluminum acetylacetonate, dimethylaluminum amide, triisobutylaluminum, triethylaluminum, trimethylaluminum, molybdenum hexafluoride, molybdenum hexacarbonyl, copper perfluoropyruvate, copper acetylacetonate, tetramethylgermanium, zinc ethanolate, titanium tetrapyruvate, pentaacetyl compound, vanadium succinate, tungsten hexacarbonyl, triisopropylaluminum or trimethylgallium; And / or, the carrier gas is one of He, N2, Ne or Ar; And / or, the step of obtaining the first seed layer, the second seed layer or the third seed layer includes: repeating steps S21 to S23 at least once until the first seed layer, the second seed layer or the third seed layer with a target thickness is obtained.

5. The preparation method of the composite electrode according to claim 4, characterized in that, Before repeating steps S21 to S23 at least once, it further includes: Remove the unreacted precursor; Remove the unreacted groups on the surface of the semi-product thin film.

6. The preparation method of the composite electrode according to any one of claims 3 to 5, characterized in that, In the step of simultaneously introducing a precursor and a carrier gas to form a semi-product film: the introduction time of the precursor and the carrier gas is 0.05 to 1 s, and the flow rate is 6000 to 24000 sccm / m 2 ; and / or, In the step of stopping the introduction of the precursor and performing a first plasma treatment on the semi-product thin film to modify the semi-product thin film: the flow rate of the carrier gas is 18,000 to 72,000 sccm / m 2 ; the radio frequency power of the first plasma treatment is 30 kW / m 2 to 120 kW / m 2 , the radio frequency duration is 0.5 to 5 s; and / or; In the step of re-introducing the precursor, where the precursor reacts with the semi-product film: the introduction time of the precursor is 0.05 to 1 s, and the flow rate is 6000 to 24000 sccm / m 2 .

7. The method for preparing the composite electrode according to claim 5, wherein The step of removing the unreacted precursor specifically includes: pumping away the unreacted precursor, and the pumping time is 0.2 to 5 s; and / or, The step of removing the unreacted groups on the surface of the semi-product film specifically includes: introducing a reaction source, performing second plasma treatment on the semi-product film, and performing air extraction after the treatment is completed. Among them, the introduction time of the reaction source is 0.2 to 10 s, and the flow rate is 6000 to 24000 sccm / m 2 ; the radio frequency power of the second plasma treatment is 30 kW / m 2 ~120 kW / m 2 , the radio frequency duration is 0.5 to 5 s; the air extraction time is 0.2 to 5 s.

8. According to the method for preparing a composite electrode according to claim 2, wherein, The thickness of the third seed layer is greater than or equal to the thickness of the second seed layer; optionally, when the thickness of the third seed layer is greater than the thickness of the second seed layer, the surface of the third seed layer close to the conductive layer is continuous and flat, and the surface of the third seed layer far from the conductive layer has a plurality of pits, and the island units fill the pits; Optionally, when the thickness of the third seed layer is equal to the thickness of the second seed layer, the third seed layer has a plurality of holes, and the island units fill the holes; And / or, the material of the second seed layer is the same as or different from that of the conductive layer; and / or, The material of the second seed layer includes a second conductive metal; the second conductive metal includes one or more of silver, gold, platinum, copper; and / or, The average height of the island units is 0.3 nm to 3 nm; and / or, The average diameter of the island units is 0.03 μm to 30 μm; and / or, The spacing between adjacent ones of the island-shaped units is 1 μm to 200 μm; and / or, the material of the conductive layer is selected from one of silver, gold, platinum, and copper; and / or, the thickness of the conductive layer is 3 to 12 nm.

9. The preparation method of the composite electrode according to claim 2, wherein, The material of the third seed layer is the same as or different from that of the first seed layer; and / or, the thickness of the third seed layer is 0.3 to 20 nm; and / or, the thickness of the first seed layer is 0.3 to 20 nm; and / or, the material of the third seed layer includes one or several of a third conductive metal, a metal compound, and an organic compound; the third conductive metal includes one or several of aluminum, copper, germanium, silver, platinum, and gold; and / or the metal compound includes one or more of doped metal oxide particles, undoped metal oxide particles, ceramic semiconductor materials, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The metal oxides in the undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the doped metal oxides include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the doped metal oxides include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, and Sn. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS; and / or the organic compound includes one or several of polyetherimide, TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, and polyaniline.

10. A composite electrode, characterized in that, The composite electrode is prepared by using the preparation method of the composite electrode according to any one of claims 1 to 9; or, the composite electrode includes a first seed layer and a conductive layer which are stacked.

11. The composite electrode according to claim 10, wherein, The composite electrode further includes a second seed layer and a third seed layer. The second seed layer is disposed between the first seed layer and the conductive layer, and the third seed layer is disposed between the second seed layer and the conductive layer; wherein, the second seed layer is a discontinuous seed layer; optionally, the second seed layer includes a plurality of island-shaped units which are spaced apart.

12. The composite electrode according to claim 11, wherein The thickness of the third seed layer is greater than or equal to the thickness of the second seed layer; optionally, when the thickness of the third seed layer is greater than the thickness of the second seed layer, the surface of the third seed layer close to the conductive layer is continuous and flat, and the surface of the third seed layer away from the conductive layer has a plurality of pits, and the island-shaped units fill the pits; Optionally, when the thickness of the third seed layer is equal to the thickness of the second seed layer, the third seed layer has a plurality of holes, and the island-shaped units fill the holes; and / or, the material of the second seed layer is the same as or different from that of the conductive layer; and / or, the material of the second seed layer includes a second conductive metal; the second conductive metal includes one or more of silver, gold, platinum, and copper; and / or, the average height of the island-shaped units is 0.3 nm to 3 nm; and / or, the average diameter of the island-shaped units is 0.03 μm to 30 μm; and / or, the spacing between adjacent island-shaped units is 1 μm to 200 μm; and / or, the material of the conductive layer is selected from one of silver, gold, platinum, and copper; and / or, the thickness of the conductive layer is 3 to 12 nm.

13. The composite electrode according to claim 11, wherein the material of the third seed layer is the same as or different from that of the first seed layer; and / or, the thickness of the third seed layer is 0.3 to 20 nm; and / or, the thickness of the first seed layer is 0.3 to 20 nm; and / or, the material of the third seed layer includes one or more of a third conductive metal, a metal compound, and an organic compound; the third conductive metal includes one or more of aluminum, copper, germanium, silver, platinum, and gold; and / or, the metal compound includes one or more of doped metal oxide particles, undoped metal oxide particles, ceramic semiconductor materials, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The metal oxides in the undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the doped metal oxides include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the doped metal oxides include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS; and / or, The organic compound includes one or more of polyetherimide, TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, and polyaniline.

14. An optoelectronic device, characterized in that, The optoelectronic device includes the composite electrode as described in any one of claims 10 to 13, or the electrode of the optoelectronic device is prepared by the preparation method as described in any one of claims 1 to 9.

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