Crystal ball processing method and grinding equipment

Abstract

The invention provides a processing method of a crystal ball and grinding equipment. The processing method of the crystal ball comprises the following steps. And the crystal ball is moved to a first machining station of the grinding equipment, and a first grinding wheel in the first machining station is used for conducting the side wall grinding process on the side wall of the crystal ball. In the side wall grinding process, the crystal ball rotates along a first rotating shaft, the first grinding wheel rotates along a second rotating shaft, and the first rotating shaft is parallel to the second rotating shaft. And the crystal ball is moved to a second machining station of the grinding equipment, and a second grinding wheel in the second machining station is used for conducting the top face grinding process on the top face of the crystal ball. In the top surface grinding process, the second grinding wheel rotates along a third rotating shaft, the crystal ball rotates along a first rotating shaft, and the third rotating shaft is perpendicular to the first rotating shaft.

Description

Technical Field

[0001] The present invention relates to a processing method for crystal balls and a grinding device. Background Art

[0002] A wafer is a key material for manufacturing various chips. Generally, the method for manufacturing a wafer includes the following steps: First, a crystal ball is formed in a crystal growth furnace. Subsequently, the crystal ball is taken out of the growth furnace. Then, the head and tail of the crystal ball are cut off, and these parts are usually uneven or defective due to fluctuations during the growth process. Finally, a slicing process is performed to obtain multiple wafers, and each wafer needs to have a high degree of flatness and uniformity to adapt to subsequent semiconductor manufacturing processes.

[0003] To increase the yield of wafers and ensure the integrity of the crystal ball during the processing, many factories are actively researching and developing new technologies to reduce the risk of cracks in the crystal ball during the processing. In addition, they are also focusing on optimizing the processing time to improve the overall production efficiency. The progress of these technologies can not only improve the quality of wafers but also help reduce the manufacturing cost, thereby enhancing competitiveness. Summary of the Invention

[0004] The present invention provides a processing method for crystal balls, which can improve the problem of cracks in the crystal ball during the grinding process and can enhance the processing efficiency of the crystal ball.

[0005] The present invention provides a grinding device that can reduce the problem of cracks in the object to be ground during the grinding process.

[0006] At least one embodiment of the present invention provides a processing method for crystal balls, including the following steps. Move the crystal ball to the first processing station of the grinding device, and perform a sidewall grinding process on the sidewall of the crystal ball using the first grinding wheel in the first processing station. During the sidewall grinding process, the crystal ball rotates along the first rotation axis, and the first grinding wheel rotates along the second rotation axis, where the first rotation axis is parallel to the second rotation axis, and the direction in which the crystal ball rotates along the first rotation axis is the same as the direction in which the first grinding wheel rotates along the second rotation axis. Move the crystal ball to the second processing station of the grinding device, and perform a top surface grinding process on the top surface of the crystal ball using the second grinding wheel in the second processing station. During the top surface grinding process, the second grinding wheel rotates along the third rotation axis, and the crystal ball rotates along the first rotation axis, where the third rotation axis is perpendicular to the first rotation axis.

[0007] At least one embodiment of the present invention provides a grinding device, which includes a moving carrier module, a first grinding module, and a second grinding module. The moving carrier module includes a processing platform and a platform rotation motor. The processing platform is configured to move between a first processing station and a second processing station. The platform rotation motor is configured to rotate the processing platform along a first rotation axis. The first grinding module includes a first grinding wheel. The first grinding wheel is located within the first processing station, and is configured to move up and down along the z-axis, and is configured to rotate along a second rotation axis. The second rotation axis is parallel to the first rotation axis. The second grinding module includes a second grinding wheel. The second grinding wheel is located within the second processing station, and is configured to move up and down along the z-axis, and is configured to rotate along a third rotation axis. The third rotation axis is perpendicular to the first rotation axis. Description of the Drawings

[0008] Figure 1 is a schematic diagram of a grinding device according to an embodiment of the present invention;

[0009] Figure 2A and Figure 2B is a schematic diagram of a method for processing a crystal ball according to an embodiment of the present invention;

[0010] Figure 3 is a flowchart of a method for processing a crystal ball according to an embodiment of the present invention;

[0011] Figure 4A is a schematic diagram of a method for forming a flat opening on the sidewall of a crystal ball according to an embodiment of the present invention;

[0012] Figure 4B is a flowchart of a method for forming a flat opening on the sidewall of a crystal ball according to an embodiment of the present invention;

[0013] Figure 5A is a schematic diagram of a method for forming a notch on the sidewall of a crystal ball according to an embodiment of the present invention;

[0014] Figure 5B is a flowchart of a method for forming a notch on the sidewall of a crystal ball according to an embodiment of the present invention;

[0015] Figure 6A is a schematic diagram of a grinding device and a method for forming a flat opening on the sidewall of a crystal ball using the grinding device according to an embodiment of the present invention;

[0016] Figure 6B is Figure 6A a partially enlarged view of;

[0017] Figure 7ASchematic diagram of a grinding device according to an embodiment of the present invention and a method for forming a notch on the sidewall of a crystal sphere using the grinding device;

[0018] Figure 7B is Figure 7A partial enlarged view of. Detailed implementation manners

[0019] Figure 1 Schematic diagram of a grinding device according to an embodiment of the present invention. Please refer to Figure 1 , the grinding device includes a moving carrier module 200, a first grinding module 300, and a second grinding module 400.

[0020] The crystal sphere 100 is fixed on the moving carrier module 200. For example, the crystal sphere 100 is attached to the magnetic object 110 through the adhesive layer 120. In some embodiments, the adhesive layer 120 includes wax or other suitable materials. For example, liquid wax is coated on the magnetic object 110 or the crystal sphere 100, and then the crystal sphere 100 is bonded to the magnetic object 110. After the wax solidifies, the crystal sphere 100 is fixed on the magnetic object 110. In some embodiments, the magnetic object 110 includes iron, steel, nickel, cobalt, or other materials that can be adsorbed by a magnet. In some embodiments, the magnetic object 110 overlaps the center of the crystal sphere 100, and the crystal sphere 100 is fixed to the moving carrier module 200 through the magnetic object 110. For example, a permanent magnet or an electromagnet in the moving carrier module 200 can be used to adsorb the magnetic object 110.

[0021] The moving carrier module 200 is configured to move the crystal sphere 100 along the x-axis. In some embodiments, in addition to moving the crystal sphere 100 along the x-axis, the moving carrier module 200 can also move the crystal sphere 100 along the y-axis. In Figure 1 , the x-axis, y-axis, and z-axis are perpendicular to each other.

[0022] The first grinding module 300 includes a first grinding wheel 310 and a vertical spindle 315 connecting the first grinding wheel 310. The first grinding wheel 310 is located within the first processing station and is configured to be movable up and down along the z-axis. In some embodiments, the first grinding module 300 further includes a first servo motor ( Figure 1 not shown). The first servo motor is used to control the rotation of the first grinding wheel 310 and the vertical spindle 315.

[0023] The second grinding module 400 includes a second grinding wheel 410 and a horizontal spindle 415 connecting the second grinding wheel 410. The second grinding wheel 410 is located within the second processing station. The second grinding wheel 410 is configured to be movable up and down along the z-axis. In some embodiments, the second grinding module 400 further includes a second servo motor ( Figure 1(not shown). The second servo motor is used to control the rotation of the second grinding wheel 410 and the horizontal spindle 415.

[0024] Figure 2A and Figure 2B is a schematic diagram of a method for processing a crystal ball according to an embodiment of the present invention. Figure 3 is a flowchart of a method for processing a crystal ball according to an embodiment of the present invention. Please refer to Figure 2A and Figure 3 In step S1, the crystal ball 100 is moved to the first processing station (such as Figure 2A the left part of

[0025] ), and the side wall 100S of the crystal ball 100 is subjected to a side wall grinding process using the first grinding wheel 310.

[0026] In the side wall grinding process, the crystal ball 100 rotates clockwise or counterclockwise along the first rotation axis 200R, and the first grinding wheel 310 rotates clockwise or counterclockwise along the second rotation axis 310R. The first rotation axis 200R is parallel to the second rotation axis 310R, thereby reducing the probability of the crystal ball cracking caused by the side wall grinding process. In some embodiments, both the first rotation axis 200R and the second rotation axis 310R are parallel to the z-axis.

[0027] In some embodiments, in the side wall grinding process, the direction in which the crystal ball 100 rotates along the first rotation axis 200R is the same as the direction in which the first grinding wheel 310 rotates along the second rotation axis 310R, thereby obtaining a higher grinding efficiency. For example, both are clockwise rotations or both are counterclockwise rotations.

[0028] After the side wall 100S of the crystal ball 100 is ground into a smooth surface, the crystal ball 100 is substantially circular when viewed from the top.

[0029] In some embodiments, before the side wall grinding process, optionally, the crystal ball 100 is subjected to a first crystal plane measurement procedure using an X-ray instrument (not shown) to roughly estimate the crystal plane orientation of the crystal ball 100.

[0030] Next, please refer toFigure 2B and Figure 3 step S2 of, moving the crystal ball 100 to a second processing station (such as Figure 2B the right part). For example, moving the carrier stage module 200 along the x-axis and / or y-axis and moving the crystal ball 100 located thereon to the second processing station. Then, the top surface 100T of the crystal ball 100 is subjected to a top surface grinding process using the second grinding wheel 410 in the second processing station.

[0031] In the top surface grinding process, the crystal ball 100 rotates clockwise or counterclockwise along the first rotation axis 200R, and the second grinding wheel 410 rotates clockwise or counterclockwise along the third rotation axis 410R. In some embodiments, the third rotation axis 410R is perpendicular to the first rotation axis 410R. In some embodiments, the third rotation axis 410R is parallel to the y-axis.

[0032] Compared with using a cutting method to remove the uneven top surface of the crystal ball 100, in this embodiment, the second grinding wheel 410 is used to grind the top surface 100T, which can not only effectively reduce material loss, but also make the processed top surface 100T have a lower roughness.

[0033] In the top surface grinding process, the second grinding wheel 410 moves along the z-axis towards the top surface 100T of the crystal ball 100 so that the second grinding wheel 410 contacts the top surface 100T of the crystal ball 100. In addition, in the top surface grinding process, the crystal ball 100 moves along the x-axis and / or y-axis perpendicular to the z-axis so that the entire top surface 100T of the crystal ball 100 can be contacted by the second grinding wheel 410 to grind off the uneven part on the top surface 100T of the crystal ball 100.

[0034] In some embodiments, the second grinding wheel 410 first contacts the peripheral part of the top surface 100T, and then the crystal ball 100 is moved so that the second grinding wheel 410 moves from the periphery of the top surface 100T towards the center of the top surface 100T until the entire top surface 100T of the crystal ball 100 is ground by the second grinding wheel 410.

[0035] In some embodiments, after the top surface grinding process, the crystal ball 100, the magnetic object 110 and the adhesive layer 120 are removed from the moving carrier stage module 200. Then, the crystal ball 100 is picked up from the adhesive layer 120, and the crystal ball 100 is flipped so that the ground top surface 100T is attached to the magnetic object 110 using another adhesive layer, and the unground bottom surface 100B of the crystal ball 100 faces upwards. Then, the crystal ball 100 is fixed to the moving carrier stage module 200 using the magnetic object 110 again, and the crystal ball 100 is moved to the second processing station. Using the same as Figure 2BThe processing method shown grinds the bottom surface 100B of the crystal sphere 100 to obtain a crystal bar. After obtaining the crystal bar, the crystal bar is removed and cut to obtain a plurality of wafers.

[0036] In some embodiments, before performing the top surface grinding process, optionally a flat or notch is formed on the sidewall 100S of the crystal sphere 100. Specifically, after performing the sidewall grinding process and before performing the top surface grinding process, the crystal sphere 100 is subjected to a second crystal plane measurement procedure using an X-ray instrument (not shown), and the position (or processing area) on the sidewall 100S of the crystal sphere 100 where the flat or notch is to be formed is obtained. Then, a flat is formed on the aforementioned processing area using the first grinding module 300 or a notch is formed on the aforementioned processing area using the second grinding module 400. In some embodiments, the crystal sphere 100 is removed from the moving carrier module 200 and moved to the X-ray instrument to perform the second crystal plane measurement procedure.

[0037] The following will be combined with Figure 4A and Figure 4B to illustrate the method of forming a flat on the sidewall 100S of the crystal sphere 100. In Figure 4B step S1A, after performing the sidewall grinding process, the position (or processing area) on the sidewall 100S of the crystal sphere 100 where the flat is to be formed is confirmed using an X-ray orientator.

[0038] Next, please refer to Figure 4A and Figure 4B step S2A, the crystal sphere 100 is repositioned on the moving carrier module 200, and the moving carrier module 200 is used to move the crystal sphere 100 to the first processing station. A flat 100F is formed on the processing area of the sidewall 100S using the first grinding wheel 310. During the formation of the flat 100F, the first grinding wheel 310 rotates in a clockwise or counterclockwise direction along the second rotation axis 310R. During the formation of the flat 100F, the first grinding wheel 310 moves along the z-axis, and the crystal sphere 100 moves along the x-axis and / or y-axis. In some embodiments, the crystal sphere 100 does not rotate during the formation of the flat 100F.

[0039] In some embodiments, the flat 100F has a depth D1 and a width W1.

[0040] In some embodiments, after forming the flat 100F, the top surface grinding process as shown in Figure 2B is performed.

[0041] In other embodiments, instead of forming a flat 100F on the sidewall 100S of the crystal sphere 100, a V-shaped notch 100N is formed on the sidewall 100S of the crystal sphere 100. The following will be combined with Figure 5Aand Figure 5B A method for forming a notch 100N on the sidewall 100S of the crystal sphere 100 is described. In Figure 4B In step S1B, after the sidewall grinding process, an X-ray orientator is used to confirm the position (or the processing area) on the sidewall 100S of the crystal sphere 100 where the notch is to be formed.

[0042] Next, please refer to Figure 5A and Figure 5B In step S2B, the crystal sphere 100 is placed back on the moving carrier platform module 200, and the moving carrier platform module 200 is used to move the crystal sphere 100 to the second processing station. A second grinding wheel 410 is used to form a notch 100N on the processing area of the sidewall 100S. During the formation of the notch 100N, the second grinding wheel 410 rotates clockwise or counterclockwise along the third rotation axis 410R. During the formation of the notch 100N, the second grinding wheel 410 moves along the z-axis, and the crystal sphere 100 moves along the x-axis and / or the y-axis.

[0043] In some embodiments, the notch 100N has a depth D2 and a width W2.

[0044] In some embodiments, after the notch 100N is formed, a top surface grinding process as shown in Figure 2B is performed.

[0045] Figure 6A FIG. is a schematic diagram of a grinding device according to an embodiment of the present invention and a method for forming a flat notch on the sidewall of a crystal sphere using the grinding device. Figure 6B is Figure 6A a partial enlarged view of. Please refer to Figure 6A and Figure 6B , the grinding device 10 includes a moving carrier platform module 200, a first grinding module 300, and a second grinding module 400. In some embodiments, the grinding device further includes a control panel 510 and an electrical box 520.

[0046] In this embodiment, the crystal sphere 100 is moved to the first processing station, and the first grinding module 300 is used to form a flat notch 100F on the sidewall of the crystal sphere 100.

[0047] The moving carrier platform module 200 includes a processing platform 210, a platform rotation motor 220, and a track module 230.

[0048] The processing platform 210 is used to carry the crystal sphere 100 to be processed. For example, the processing platform 210 includes a magnet (such as a permanent magnet or an electromagnet), and can adsorb a magnetic object attached to the crystal sphere 100. In some embodiments, the diameter of the crystal sphere 100 is 250 mm. In some embodiments, the diameter of the processing platform 210 is 300 mm.

[0049] The platform rotation motor 220 is configured to rotate the processing platform 210 along a first rotation axis parallel to the z-axis. In some embodiments, during the formation of the flat opening 100F, the platform rotation motor 220 stops rotating.

[0050] The rail module 230 is configured to move the processing platform 210 and the platform rotation motor 220 along the x-axis. In some embodiments, in addition to enabling the processing platform 210 and the platform rotation motor 220 to move along the x-axis, the rail module 230 also enables the processing platform 210 and the platform rotation motor 220 to move along the y-axis.

[0051] The rail module 230 enables the processing platform 210 and the platform rotation motor 220 to move between a first processing station and a second processing station. In Figure 6A and Figure 6B the processing platform 210 is moved to the first processing station, enabling the crystal sphere 100 on the processing platform 210 to be processed by the first grinding module 300 in the first processing station.

[0052] The first grinding module 300 includes a vertical spindle 315, a first grinding wheel 310, a first servo motor 320, and a first lifting module 330. The first grinding wheel 310 is connected to the vertical spindle 315, and the first servo motor 320 is configured to rotate the first grinding wheel 310 and the vertical spindle 315 along a second rotation axis parallel to the z-axis.

[0053] The first lifting module 330 is configured to move the first servo motor 320, the vertical spindle 315, and the first grinding wheel 310 up and down along the z-axis.

[0054] In some embodiments, the diameter of the first grinding wheel 310 is 150 mm. In some embodiments, the rotational speeds of the first servo motor 320 and the first grinding wheel 310 are 3000 rpm to 6000 rpm.

[0055] Figure 7A is a schematic diagram of a grinding device according to an embodiment of the present invention and a method of forming a notch on the sidewall of a crystal sphere using the grinding device. Figure 7B is Figure 7A a partial enlarged view. In this embodiment, no flat opening is formed on the sidewall of the crystal sphere 100. Instead, the crystal sphere 100 is moved to the second processing station, and a V-shaped notch 100N is formed on the sidewall of the crystal sphere 100 using the second grinding module 400.

[0056] The second grinding module 400 includes a horizontal spindle 415, a second grinding wheel 410, a second servo motor 420, and a second lifting module 430. The second grinding wheel 410 is connected to the horizontal spindle 415, and the second servo motor 420 is configured to rotate the second grinding wheel 410 and the horizontal spindle 415 along a third rotation axis parallel to the y-axis.

[0057] The second lifting module 430 is configured to move the second servo motor 420, the horizontal spindle 415, and the second grinding wheel 410 up and down along the z-axis.

[0058] In some embodiments, the diameter of the second grinding wheel 410 is 180 mm. In some embodiments, the rotational speeds of the second servo motor 420 and the second grinding wheel 410 are from 3000 rpm to 6000 rpm.

[0059] Table 1 provides the crack conditions of the crystal balls in Comparative Examples 1 to 2 and Examples 1 to 10 after grinding. In Comparative Examples 1 to 2, the second rotation axis of the first grinding wheel for grinding the side wall of the crystal ball is perpendicular to the first rotation axis of the crystal ball, and the third rotation axis of the second grinding wheel for grinding the top and bottom surfaces of the crystal ball is parallel to the first rotation axis of the crystal ball. In Examples 1 to 10, the second rotation axis of the first grinding wheel for grinding the side wall of the crystal ball is parallel to the first rotation axis of the crystal ball, and the third rotation axis of the second grinding wheel for grinding the top and bottom surfaces of the crystal ball is perpendicular to the first rotation axis of the crystal ball.

[0060] Table 1

[0061]

[0062] As can be seen from Table 1, in the embodiments of the present invention, the second rotation axis 310R of the first grinding wheel 310 is parallel to the first rotation axis 200R of the crystal ball 100 (please refer to Figure 2A ), and the third rotation axis 410R of the second grinding wheel 410 is perpendicular to the first rotation axis 200R of the crystal ball 100 (please refer to Figure 2B ) can improve the probability of cracks occurring in the crystal ball 100 after grinding. The rotational speeds of the first grinding wheel 310 and the second grinding wheel 410 are preferably in the range of 3000 rpm to 6000 rpm. When grinding the side wall of the crystal ball with the first grinding wheel 310, the feed rate is preferably in the range of 100 mm / min to 1000 mm / min, and the feed amount is preferably in the range of 10 μm to 500 μm. On the other hand, when grinding the top or bottom surface of the crystal ball with the first grinding wheel 310, the feed rate is preferably in the range of 100 mm / min to 1000 mm / min, and the feed amount is preferably in the range of 10 μm to 500 μm. By such a grinding method, cracks in the crystal ball 100 after grinding can be effectively avoided.

[0063] In summary, by using the grinding equipment of the present invention to grind the crystal balls, the problem of cracks generated in the crystal balls during the grinding process can be improved, and the processing efficiency of the crystal balls can be enhanced.

Claims

1. A processing method for a crystal sphere, comprising: Moving the crystal sphere to a first processing station of a grinding device, and performing a side wall grinding process on the side wall of the crystal sphere by using a first grinding wheel in the first processing station. In the side wall grinding process, the crystal sphere rotates along a first rotation axis, and the first grinding wheel rotates along a second rotation axis, wherein the first rotation axis is parallel to the second rotation axis, and the rotation direction of the crystal sphere along the first rotation axis is the same as the rotation direction of the first grinding wheel along the second rotation axis; and Moving the crystal sphere to a second processing station of the grinding device, and performing a top surface grinding process on the top surface of the crystal sphere by using a second grinding wheel in the second processing station. In the top surface grinding process, the second grinding wheel rotates along a third rotation axis, and the crystal sphere rotates along the first rotation axis, wherein the third rotation axis is perpendicular to the first rotation axis.

2. The processing method according to claim 1, further comprising: After performing the side wall grinding process and before performing the top surface grinding process, performing a crystal plane measurement procedure on the crystal sphere by using an X-ray instrument, and obtaining a processing area on the side wall of the crystal sphere.

3. The processing method according to claim 2, further comprising: After performing the side wall grinding process, forming a flat opening on the processing area by using the first grinding wheel.

4. The processing method according to claim 2, further comprising: After performing the side wall grinding process, forming a V-shaped notch on the processing area by using the second grinding wheel.

5. The processing method according to claim 1, wherein in the side wall grinding process, the first grinding wheel moves along the z-axis, and the crystal sphere moves along the x-axis and / or y-axis perpendicular to the z-axis towards the first grinding wheel, wherein the z-axis is parallel to the first rotation axis and the second rotation axis, and the third rotation axis is parallel to the y-axis.

6. The processing method according to claim 1, wherein in the top surface grinding process, the second grinding wheel moves along the z-axis towards the crystal sphere, and the crystal sphere moves along the x-axis and / or y-axis perpendicular to the z-axis, wherein the z-axis is parallel to the first rotation axis and the second rotation axis, and the third rotation axis is parallel to the y-axis.

7. A grinding device, comprising: A moving and carrying platform module, comprising: A processing platform configured to move between a first processing station and a second processing station; and A platform rotation motor configured to rotate the processing platform along a first rotation axis; A first grinding module, comprising: A first grinding wheel located in the first processing station, configured to move up and down along the z-axis, and configured to rotate along a second rotation axis, wherein the second rotation axis is parallel to the first rotation axis; and A second grinding module, comprising: A second grinding wheel located in the second processing station, configured to move up and down along the z-axis, and configured to rotate along a third rotation axis, wherein the third rotation axis is perpendicular to the first rotation axis.

8. The grinding device according to claim 7, wherein the first grinding module further comprises: The first servo motor; A vertical spindle, wherein the first grinding wheel is connected to the vertical spindle, and the first servo motor is configured to rotate the first grinding wheel and the vertical spindle along the second rotation axis; And A first lifting module, configured to move the first servo motor, the vertical spindle, and the first grinding wheel up and down along the z-axis.

9. The grinding device according to claim 7, wherein the moving carrier table module further comprises: A rail module, configured to move the processing platform along the x-axis perpendicular to the z-axis.

10. The grinding device according to claim 7, wherein the processing platform includes a magnet.

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