Dynamic self-adaptive evaporation system and evaporation method

Abstract

The invention relates to a dynamic self-adaptive evaporation system and an evaporation method.The evaporation system comprises a vacuum cavity, an evaporation source and a substrate carrier plate, the vacuum cavity comprises an evaporation area, a transition area and a deposition area which are sequentially communicated from bottom to top, a first partition plate is arranged between the evaporation area and the transition area, the center of the first partition plate is ventilated, and a first partition device is arranged at the center of the first partition plate; a second partition plate is arranged between the transition area and the deposition area, the center of the second partition plate is ventilated and provided with a second partition device, an evaporation source is arranged in the middle of the evaporation area, a cooling cavity is arranged around the periphery of the transition area, a condensation ring and a cryogenic trap are arranged in the cooling cavity, and a substrate carrier plate is arranged in the center of the upper portion of the deposition area. The evaporation method comprises the steps of establishment of a dynamic pressure layered vacuum environment, preheating and evaporation. According to the evaporation system, the dynamic pressure layering cavity adopts the electromagnetic barrier with the charged micropore array, evaporation substances and by-products are isolated, regulated and controlled in real time through the pressure gradient design, pressure fluctuation is low, coating uniformity is high, and the material utilization rate is high.

Description

Technical Field

[0001] The present invention relates to the technical field of perovskite solar cells, and particularly to a dynamic adaptive evaporation system and an evaporation method. Background Art

[0002] Perovskite solar cells have received extensive attention in recent years due to their excellent photoelectric conversion efficiency (the single-junction efficiency has exceeded 25%) and low-cost potential. Although the traditional solution method has a simple process, there are problems such as solvent residues, environmental pollution, and uneven thin films. In contrast, the vacuum vapor deposition method has the advantages of solvent-free, dense film layers, good uniformity, and easy large-area continuous production. However, the existing vacuum evaporation equipment has the following problems when depositing high-volatility organic materials (such as FAI, MAI): 1. Significant pressure fluctuations: When FAI evaporates, the evaporation rate is high, resulting in the chamber pressure rising rapidly from 10 -6 Pa to 10 -2 Pa, with a fluctuation range of ±50%, which affects the deposition stability and sample loading. 2. Low material utilization rate: The traditional evaporation source design (such as tungsten boats, crucibles) leads to disordered vapor diffusion, and the material utilization rate is only about 30%. 3. Severe decomposition phenomenon: High-temperature (180 - 200 °C) evaporation easily decomposes FAI, MAI, etc. into volatile by-products (such as HI), reducing the film quality. 4. Unstable thickness detection: The quartz crystal oscillator (QCM) is contaminated by the attachment of FAI, the frequency decays rapidly, the measurement error exceeds ±20%, and the crystal oscillator frequency decays relatively fast.

[0003] The prior art mostly improves the vacuum degree, optimizes the heating temperature, adjusts the molecular flow through mechanical valves or fixed-aperture partitions, or adopts static parameter control. However, these methods are difficult to dynamically adapt to the instantaneous volatilization characteristics of FAI and cannot effectively isolate by-products. The above measures are difficult to simultaneously consider pressure control, material utilization rate, and long-term stable monitoring. In addition, traditional equipment lacks real-time data feedback and intelligent control, and the adjustment of process parameters depends on experience, making it difficult to meet the requirements of industrial large-scale preparation. Existing literature (such as "Research Progress on the Device Process of Vacuum Evaporated Perovskite Solar Cells", etc.) points out that the multi-stage pressure stratification and precise dynamic control of the equipment are crucial for improving product consistency and stability.

[0004] Chinese Patent CN117512522A discloses an evaporation coating device and an evaporation coating process. The evaporation coating device utilizes a funnel-shaped device structure to enable the object to be evaporated to pass through the buffer chamber from the lower evaporation chamber and reach the heating chamber, thereby adhering to the object to be coated. A large number of packing balls are stacked in the buffer chamber here, thus forming a channel for steam dispersion, making the steam more evenly dispersed in the buffer chamber. However, the removal effect of by-products is not ideal, and it is easy to cause product quality problems.

[0005] Therefore, it is necessary to improve the device structure and coating method to solve the above problems. Summary of the Invention

[0006] The main object of the present invention is to provide a dynamic adaptive evaporation coating system, which can dynamically pressure-stratify the cavity, adopt an electromagnetic barrier with a charged microporous array, and through pressure gradient design, isolate and regulate the evaporation substance and by-products in real time.

[0007] The present invention realizes the above object through the following technical solutions: A dynamic adaptive evaporation coating system, including a vacuum cavity, an evaporation source and a substrate carrier. The vacuum cavity includes an evaporation area, a transition area and a deposition area that are sequentially connected from bottom to top. A first partition is provided between the evaporation area and the transition area. The center of the first partition is ventilated and provided with a first partition device. A second partition is provided between the transition area and the deposition area. The center of the second partition is ventilated and provided with a second partition device. An evaporation source is provided in the middle of the evaporation area. A cooling cavity is arranged around the periphery of the transition area. A condensation ring for cooling the transition area and a cryogenic trap for cooling the deposition area are provided in the cooling cavity. A substrate carrier is provided at the upper center of the deposition area. A first air extraction port connected to a first air extraction pump is provided on the side wall of the evaporation area. A second air extraction port connected to a second air extraction pump is provided on the side wall of the transition area. A third air extraction port connected to a third air extraction pump is provided on the side wall of the deposition area. The suction forces of the first air extraction pump, the second air extraction pump and the third air extraction pump increase in sequence.

[0008] Specifically, a film thickness monitoring device is provided below the substrate carrier in the deposition area.

[0009] Further, the film thickness monitoring device includes a plurality of crystal oscillator detectors arranged in a circular array around a vertical axis, an anti-coating baffle rotating around the vertical axis, and a cleaning head following the movement of the anti-coating baffle. A notch that only allows one crystal oscillator detector to be exposed is provided on the anti-coating baffle. When the notch aligns with one crystal oscillator detector, the cleaning head aligns with another crystal oscillator detector.

[0010] Specifically, the cleaning head is a plasma gas nozzle.

[0011] Specifically, the first partition device and the second partition device are electromagnetic barriers, which are made of a porous molybdenum substrate with a thickness of 2 to 5 mm. The porous molybdenum substrate is distributed with a microporous array with a diameter of 0.1 to 1 mm, and the porosity is 20% to 80%.

[0012] Another main object of the present invention is to provide a vapor deposition method, which can obtain a perovskite organic halide material deposition film with high coating uniformity, small thickness error and high material utilization rate by using the above dynamic adaptive vapor deposition system.

[0013] A vapor deposition method using the vapor deposition system, the steps are as follows: S1. Establish a dynamic pressure stratified vacuum environment: the working pressure in the evaporation zone is controlled at 10 -3 ~10 -2 Pa, the working pressure in the transition zone is controlled at 10 -4 ~10 -3 Pa, the temperature of the condensation ring is 10 to 20 °C, the working pressure in the deposition zone is controlled at 10 -6 ~10 -5 Pa, and the temperature of the deep cold trap is -50 to -100 °C; S2. Preheat: heat the vapor deposition material to 75 to 85 °C in the evaporation zone to remove impurities and moisture; S3. Vapor deposition: heat the vapor deposition material to 125 to 135 °C in the evaporation zone, and monitor the film thickness in real time until the target film thickness is reached to complete the vapor deposition.

[0014] Specifically, the temperature of the evaporation source is maintained at 125 to 135 °C, the heating cycle frequency of the pulse heater is 0.2 - 0.5 Hz, and the duty cycle is 30% - 50%; the power of the plasma generator is 5 to 30 W, and an inert gas is used as the protective gas.

[0015] Specifically, an electromagnetic funnel coil is provided below the first partition device. The lower diameter of the electromagnetic funnel coil is larger than the upper diameter. The lower diameter of the electromagnetic funnel coil is not less than the diameter of the evaporation source. The upper diameter of the electromagnetic funnel coil is equal to the diameter of the first partition device. The diameter of the electromagnetic funnel coil is 2 - 5 mm, the number of turns is 10 - 20, and the coil pitch is 1 - 2 cm.

[0016] Further, the temperature of the evaporation source is maintained at 125 to 135 °C, the heating cycle frequency of the pulse heater is 0.2 - 0.5 Hz, and the duty cycle is 30% - 50%; the power of the plasma generator is 5 to 30 W, and an inert gas is used as the protective gas.

[0017] Specifically, the evaporation source includes a porous crucible, a plasma generator located above the porous crucible, and a pulse heater located below the porous crucible.

[0018] Furthermore, the working current of the electromagnetic funnel coil is 1 - 5 A, generating a gradient magnetic field with a field strength of 0.1 - 0.5 T.

[0019] The beneficial effects of the technical solution of the present invention are as follows: 1. The dynamic pressure stratification cavity adopts an electromagnetic barrier with charged microporous arrays. Through pressure gradient design, it can isolate and regulate evaporation substances and by - products in real - time. The pressure fluctuation is as low as ±5%, the coating uniformity is ±2%, and the material utilization rate is as high as 80%. 2. The plasma - assisted pulse evaporation source combines ultra - plasma technology and pulse heating to achieve low - temperature, high - efficiency, and uniform material volatilization, reducing decomposition. The decomposition rate is as low as 4%, and the HI concentration < 10 -5 mbar; 3. The adaptive film thickness monitoring device, with an on - line self - cleaning crystal oscillator detector, enables the repeated use of the crystal oscillator detector to extend its life and reduce the frequency of opening the cavity for replacement. Description of the Drawings

[0020] Figure 1 It is a sectional view of the dynamic adaptive evaporation system in the embodiment; Figure 2 It is a three - dimensional view of the film thickness monitoring device.

[0021] The numbers in the figure represent: 1 - vacuum cavity, 11a - evaporation area, 11b - transition area, 11c - deposition area, 11d - cooling cavity, 12a - first partition, 12b - second partition, 13a - first partition device, 13b - second partition device, 14a - first air extraction port, 14b - second air extraction port, 14c - third air extraction port; 2 - evaporation source, 21 - porous crucible, 22 - plasma generator, 23 - pulse heater; 3 - substrate carrier; 4 - film thickness monitoring device, 41 - crystal oscillator detector, 42 - anti - plating baffle, 421 - notch, 43 - cleaning head; 5 - electromagnetic funnel coil. Detailed Embodiments

[0022] The present invention will be further described in detail below with reference to specific embodiments.

[0023] Embodiment: As Figure 1As shown in the figure, a dynamic adaptive evaporation coating system of the present invention includes a vacuum chamber 1, an evaporation source 2 and a substrate carrier 3. The vacuum chamber 1 includes an evaporation zone 11a, a transition zone 11b and a deposition zone 11c that are connected in sequence from bottom to top. A first partition 12a is provided between the evaporation zone 11a and the transition zone 11b. The center of the first partition 12a is ventilated and is provided with a first partition device 13a. A second partition 12b is provided between the transition zone 11b and the deposition zone 11c. The center of the second partition 12b is ventilated and is provided with a second partition device 13b. An evaporation source 2 is provided in the middle of the evaporation zone 11a. A cooling chamber 11d is arranged around the periphery of the transition zone 11b. A condensation ring for cooling the transition zone 11b and a cryopump for cooling the deposition zone 11c are provided in the cooling chamber 11d. A substrate carrier 3 is provided at the upper center of the deposition zone 11c. A first air extraction port 14a connected to a first air extraction pump is provided on the side wall of the evaporation zone 11a. A second air extraction port 14b connected to a second air extraction pump is provided on the side wall of the transition zone 11b. A third air extraction port 14c connected to a third air extraction pump is provided on the side wall of the deposition zone 11c. The suction forces of the first air extraction pump, the second air extraction pump and the third air extraction pump increase in sequence.

[0024] Here, the first air extraction pump can adopt a small mechanical pump (10 - 20 L / s), the second air extraction pump can adopt a turbopump (100 - 200 L / s), and the third air extraction pump can adopt a molecular pump (500 - 1000 L / s). The suction forces of the three increase in sequence, so that each zone can be used as a control point to make the vacuum chamber 1 have a pressure gradient. The operating pressure of the evaporation zone 11a is controlled at 10 -3 ~10 -2 Pa, the operating pressure of the transition zone 11b is controlled at 10 -4 ~10 -3 Pa, the operating pressure of the deposition zone 11c is controlled at 10 -6 ~10 -5 Pa. The edges of the horizontal partitions (the first partition 12a and the second partition 12b) between the zones are connected to the chamber wall through sealing rings, and electromagnetic barriers (the first partition device 13a and the second partition device 13b) are inlaid in the center: a porous molybdenum substrate (with a thickness of 2 - 5 mm) can be used, a microporous array with a diameter of 0.1 - 1 mm is distributed on the surface, the porosity is 20% - 80%, copper electrodes are embedded on both sides of the substrate and connected to a radio frequency power supply (13.56 MHz, voltage 100 - 500 V), an insulating layer is coated on the surface, argon gas (1 - 5 sccm) is injected into the micropores, low-density plasma is excited, and the passing rate of neutral molecules (such as FAI) is controlled through electric field constraint and particle collision, forming an effect similar to a variable aperture, and the molecular flow rate is regulated in real time. Combining the independently equipped vacuum pumping systems in the three regions, multi-stage pressure precise isolation is realized, and the interference of pressure fluctuation on the deposition process is reduced.

[0025] During the deposition of FAI, the pressure in the evaporation zone 11a rises to 10 -2 Pa due to the high volatility of the material. It is difficult for traditional systems to maintain the pressure in the deposition zone 11c below 10 -5 Pa. The present invention achieves multi-stage pressure isolation through the following mechanisms: (1) A low voltage (100 - 200 V) is applied to the first partition device 13a to limit the molecular flow to 10 - 15 molecules / s, reducing the pressure in the transition zone 11b to 10 -3 Pa; (2) A high voltage (300 - 500 V) is applied to the second partition device 13b to further reduce the flow rate to 10 - 14 molecules / s, and in cooperation with a high pumping speed molecular pump (1000 L / s), ensuring that the pressure in the deposition zone 11c is stabilized at 10 -5 Pa.

[0026] This technology significantly reduces the pressure fluctuation (from ±50% to ±5%), improves the material utilization rate (from 30% to 80%), and enhances the film quality through by-product isolation. Compared with the prior art, its dynamic regulation ability and adaptability to diffusive organic materials constitute significant technological progress.

[0027] As Figure 1 and Figure 2 shown, a film thickness monitoring device 4 is provided below the substrate carrier 3 in the deposition zone 11c. The film thickness monitoring device 4 includes a plurality of crystal oscillator detectors 41 arranged in an annular array around the vertical axis, a plating protection baffle 42 rotating about the vertical axis, and a cleaning head 43 following the movement of the plating protection baffle 42. The plating protection baffle 42 is provided with a notch 421 that only allows one crystal oscillator detector 41 (QCM) to be exposed. When the notch 421 aligns with one crystal oscillator detector 41, the cleaning head 43 aligns with another crystal oscillator detector 41.

[0028] The film thickness monitoring device 4 is used to monitor the coating thickness on the substrate in real time. It can be a crystal oscillator detector 41 or a laser interferometer head, etc. To overcome the problem of oscillation frequency decay caused by surface contamination of traditional QCM during the deposition process of organic materials. In the device of the present invention, a monitoring array composed of multiple crystal oscillator detectors 41 is provided to detect the thickness of the deposited film in real time. The number of crystal oscillator detectors 41 in the present invention is 4 - 10 (when coating the TiO2 photocatalytic layer), and the crystal oscillator detector 41 is equipped with a low-temperature condensation ring (10 - 20 °C) to ensure the temperature control of the crystal oscillator detector 41. When the notch 421 is aligned with a crystal oscillator detector 41, this crystal oscillator detector 41 can monitor the coating thickness in real time, while the cleaning head 43 will be aligned with another crystal oscillator detector 41. This film thickness monitoring device 4 belongs to a self-cleaning crystal oscillator system, which can switch to other standby crystal oscillators when it detects that the crystal oscillator frequency caused by organic attachments drops to a preset value, and perform an automatic cleaning program on the replaced crystal oscillator to restore the crystal oscillator sensitivity, ensure the uninterrupted use and reuse of the crystal oscillator detector 41, enable the crystal oscillator detector 41 to be reused to extend its life, and reduce the frequency of opening the cavity for replacement. The cleaning head 43 can use an ultraviolet light source (wavelength 254 nm) or a plasma gas nozzle (power 50 - 300 W) for periodic self-cleaning treatment.

[0029] As Figure 1 shown, the first partition device 13a and the second partition device 13b are electromagnetic barriers, which are made of a porous molybdenum substrate with a thickness of 2 - 5 mm. A microporous array with a diameter of 0.1 - 1 mm is distributed on the porous molybdenum substrate, and the porosity is 20% - 80%.

[0030] As Figure 1 shown, an electromagnetic funnel coil 5 is provided below the first partition device 13a. The lower diameter of the electromagnetic funnel coil 5 is larger than the upper diameter. The lower diameter of the electromagnetic funnel coil 5 is not less than the diameter of the evaporation source 2. The upper diameter of the electromagnetic funnel coil 5 is equal to the diameter of the first partition device 13a. The diameter of the electromagnetic funnel coil 5 is 2 - 5 mm, the number of turns is 10 - 20, and the coil pitch is about 1 - 2 cm.

[0031] The electromagnetic funnel coil 5 is a vapor flow control device, installed above the evaporation source 2, which guides the FAI vapor from the disordered diffusion state to a directional molecular beam through a magnetic field. The vapor released by the traditional evaporation source diffuses isotropically and is limited by the cosine distribution law (cosθ distribution), resulting in a large difference in the deposition rate between the edge and the center of the substrate (uniformity ±10% - 20%). For highly volatile materials such as FAI, this problem is more serious. Therefore, the electromagnetic funnel coil 5 is introduced to achieve the directional transmission and uniform deposition of the vapor.

[0032] The FAI vapor mainly consists of neutral molecules and is not directly affected by the magnetic field. However, the FAI vapor contains charged fragments (in the evaporation zone 11a, due to the interaction between decomposition products and plasma, such as I - and CH(NH2)2 + These particles can be constrained by the Lorentz force (F = qv × B) and spiral upward along the magnetic field lines. The FAI neutral molecules are indirectly guided to flow upward through collisions and momentum transfer (drag effect) with the charged particles. The molecular beam is released upward from the top of the funnel, passes through the transition zone 11b and the deposition zone 11c, and finally uniformly deposits on the upper substrate (distance 10 - 20 cm).

[0033] As Figure 1 shown, the evaporation source 2 includes a porous crucible 21, a plasma generator 22 located above the porous crucible 21, and a pulse heater 23 located below the porous crucible 21.

[0034] The lower part of the evaporation source 2 is heated by the pulse heater 23. The porous crucible 21 uses an ultra-thin porous tungsten-ceramic composite boat or crucible, with a nickel-chromium heating wire embedded inside to achieve pulse heating (frequency 0.1 - 1 Hz), and quickly raise the temperature to near the evaporation temperature within a short time. Pulse heating can alternate between short high-temperature pulses and low-temperature cooling, effectively reducing the average heat load of the organic material and avoiding long-term local overheating and decomposition. A plasma generator 22 (low-pressure Ar or N2 atmosphere, power 5 - 30 W) is installed above the porous crucible 21. By generating a low-density plasma, the surface of the organic material molecules is activated and slightly bombarded, thereby reducing its sublimation energy barrier (lowering the evaporation temperature) and promoting the depolymerization of molecular clusters and reducing molecular decomposition. Plasma assistance can reduce the evaporation temperature of the organic material by 20% - 30% (reference: Applied Surface Science, 2018). The plasma energy is much lower than the chemical bond energy for FAI decomposition (C-N bond is about 3 eV, I - iodine dissociation is about 2.5 eV), so it will not significantly promote decomposition. The plasma-assisted pulse evaporation source, combined with ultra-plasma technology and pulse heating, realizes low-temperature, high-efficiency, and uniform material volatilization, reduces decomposition, and the decomposition rate is as low as 4%, and the HI concentration is <10 -5 mbar.

[0035] A vapor deposition method using a vapor deposition system, the steps are as follows: S1. Establish a dynamic pressure stratified vacuum environment: The working pressure in the evaporation zone 11a is controlled at 10 -3 ~10 -2 Pa, and the working pressure in the transition zone 11b is controlled at 10 -4 ~10 -3Pa, the temperature of the condensation ring is 10~20°C, and the working pressure in the deposition area 11c is controlled at 10 -6 ~10 -5 Pa, and the temperature of the cryogenic trap is -50~-100°C; S2. Preheating: Heat the evaporation material to 75~85°C in the evaporation area 11a to remove impurities and moisture; S3. Evaporation coating: Heat the evaporation material to 125~135°C in the evaporation area 11a, and monitor the film thickness in real time until the target film thickness is reached to complete the evaporation coating.

[0036] The temperature of the evaporation source 2 is maintained at 125~135°C, the heating cycle frequency of the pulse heater 23 is 0.2 - 0.5 Hz, and the duty cycle is 30% - 50%; the power of the plasma generator 22 is 5~30 W, and an inert gas is used as the protective gas. The working current of the electromagnetic funnel coil 5 is 1~5 A, generating a gradient magnetic field with a field strength of 0.1~0.5 T.

[0037] This dynamic adaptive evaporation coating system can perform feedback control in combination with artificial intelligence: a) The sensor network collects the pressure, temperature, evaporation rate and film thickness data in each vacuum chamber 1 in real time and transmits the data to the central control unit. The sensor group includes: a pressure sensor (10 -7 -10 -1 Pa, accuracy ±0.1%), an infrared temperature sensor (50 - 200°C, accuracy ±1°C), a mass spectrometer (detecting HI, sensitivity 10 -6 mbar), and a laser interferometer film thickness gauge (accuracy 0.1 nm); b) The control unit is embedded with an AI module based on reinforcement learning and dynamic adaptive algorithms. This module compares the real-time data with the preset process parameters and autonomously adjusts the heating power of the evaporation source, the pulse heating cycle, the plasma power, and the electromagnetic isolation aperture setting to achieve automatic optimization of the process parameters. The actuator group includes: a pulse heater 23 (0.1 - 1 Hz), a plasma generator 22 (5 - 30 W), an electromagnetic barrier power supply (100 - 500 V), and a crystal oscillator array self-cleaning system; c) AI control can not only generate the optimal deposition plan according to the characteristics of different organic materials, but also compensate for external environmental fluctuations in real time to ensure that the deposition process always operates under the best conditions, greatly improving the product consistency and production efficiency. Control module: Based on the deep Q-network (DQN) reinforcement learning algorithm, the state space includes pressure, temperature, by-product concentration, and film thickness, the action space includes heating frequency, plasma power, and barrier voltage, and the reward function is the weighted sum of uniformity (±3%) and decomposition rate (<5%). The DQN model is pre-trained on the deposition dataset of specific materials such as FAI (more than 100 experiments), the weights are updated by online learning, and it is integrated into the ARM Cortex-M7 controller with a response time control <10ms.

[0038] The above are only some embodiments of the present invention. For those of ordinary skill in the art, without departing from the inventive concept of the present invention, several modifications and improvements can still be made, and these all belong to the protection scope of the present invention.

Claims

1. A dynamic adaptive evaporation coating system, characterized in that: It includes a vacuum chamber, an evaporation source and a substrate carrier. The vacuum chamber includes an evaporation zone, a transition zone and a deposition zone that are connected in sequence from bottom to top. A first partition is provided between the evaporation zone and the transition zone. The center of the first partition is ventilated and is provided with a first partition device. A second partition is provided between the transition zone and the deposition zone. The center of the second partition is ventilated and is provided with a second partition device. An evaporation source is provided in the middle of the evaporation zone. A cooling chamber is arranged around the periphery of the transition zone. A condensation ring for cooling the transition zone and a cryogenic trap for cooling the deposition zone are provided in the cooling chamber. A substrate carrier is provided at the upper center of the deposition zone. A first air extraction port connected to a first air extraction pump is provided on the side wall of the evaporation zone. A second air extraction port connected to a second air extraction pump is provided on the side wall of the transition zone. A third air extraction port connected to a third air extraction pump is provided on the side wall of the deposition zone. The suction forces of the first air extraction pump, the second air extraction pump and the third air extraction pump increase in sequence.

2. The dynamic adaptive evaporation coating system according to claim 1, wherein: A film thickness monitoring device is provided in the deposition zone below the substrate carrier.

3. The dynamic adaptive evaporation coating system according to claim 2, wherein: The film thickness monitoring device includes a plurality of crystal oscillator detectors arranged in a circular array around a vertical axis, a plating protection baffle rotating around the vertical axis, and a cleaning head following the movement of the plating protection baffle. The plating protection baffle is provided with a notch that only allows one crystal oscillator detector to be exposed. When the notch aligns with one crystal oscillator detector, the cleaning head aligns with another crystal oscillator detector.

4. The dynamic adaptive evaporation coating system according to claim 3, wherein: The cleaning head is a plasma gas nozzle.

5. The dynamic adaptive evaporation coating system according to claim 1, wherein: Both the first partition device and the second partition device are electromagnetic barriers. The electromagnetic barriers are made of a porous molybdenum substrate with a thickness of 2 - 5 mm. A microporous array with a diameter of 0.1 - 1 mm is distributed on the porous molybdenum substrate, and the porosity is 20% - 80%.

6. A vapor deposition method using the vapor deposition system according to any one of claims 1 to 5, characterized in that, The steps are as follows: S1. Establish a dynamic pressure stratified vacuum environment: The working pressure in the evaporation zone is controlled at 10 -3 ~10 -2 Pa, the working pressure in the transition zone is controlled at 10 -4 ~10 -3 Pa, the temperature of the condensation ring is 10 - 20°C, the working pressure in the deposition zone is controlled at 10 -6 ~10 -5 Pa, and the temperature of the deep cold trap is -50~-100°C; S2. Preheating: Heat the evaporation material to 75 - 85 °C in the evaporation zone to remove impurities and moisture. S3. Evaporation coating: Heat the evaporation material to 125 - 135 °C in the evaporation zone, and monitor the film thickness in real time until the target film thickness is reached to complete the evaporation coating.

7. The vapor deposition method according to claim 6, wherein: The evaporation source includes a porous crucible, a plasma generator located above the porous crucible, and a pulse heater located below the porous crucible.

8. The evaporation deposition method according to claim 7, wherein: The temperature of the evaporation source is maintained at 125 - 135 °C. The heating cycle frequency of the pulse heater is 0.2 - 0.5 Hz, and the duty cycle is 30% - 50%. The power of the plasma generator is 5 - 30 W, and an inert gas is used as the protective gas.

9. The vapor deposition method according to claim 6, wherein: An electromagnetic funnel coil is provided below the first partition device. The lower diameter of the electromagnetic funnel coil is larger than the upper diameter. The lower diameter of the electromagnetic funnel coil is not less than the diameter of the evaporation source. The upper diameter of the electromagnetic funnel coil is equal to the diameter of the first partition device. The diameter of the electromagnetic funnel coil is 2 - 5 mm, the number of turns is 10 - 20, and the coil spacing is 1 - 2 cm.

10. The vapor deposition method according to claim 9, wherein: The working current of the electromagnetic funnel coil is 1 - 5 A, generating a gradient magnetic field with a field strength of 0.1 - 0.5 T.

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