Gas transmission device and atomic deposition system

Abstract

The embodiment of the invention provides a gas transmission device and an atomic deposition system, relates to the technical field of atomic deposition, and is used for improving the distribution uniformity of atoms in a thin film deposited on a wafer. The gas transmission device comprises a gas mixing structure, a gas outlet pipe and a plurality of gas inlet pipes. And a gas mixing cavity is formed in the gas mixing structure. One end of the gas outlet pipe is connected to the gas mixing structure and communicated with the gas mixing cavity. The second end is farther from the opposite end of the gas outlet pipe in the gas mixing cavity than the first end in the direction that the gas outlet pipe points to the gas mixing cavity. The gas transmission device is used for the atomic deposition system.

Description

Technical Field

[0001] This application relates to the field of atomic deposition technology, and particularly to a gas transmission device and an atomic deposition system. Background Art

[0002] An atomic deposition system can be used to deposit an atomic thin film on a wafer. Among them, the atomic deposition system can include a gas transmission device and a deposition chamber. The wafer can be placed in the deposition chamber, and the gas transmission device can be used to introduce a variety of reaction gases into the deposition chamber. After the reaction gases enter the deposition chamber, the atoms in the reaction gases can be deposited on the wafer, thereby forming an atomic thin film on the wafer. However, in the related art, the uniformity of the distribution of atoms in the atomic thin film on the wafer is poor. Summary of the Invention

[0003] The purpose of the embodiments of this application is to provide a gas transmission device and an atomic deposition system for improving the uniformity of the distribution of atoms in the thin film deposited on the wafer.

[0004] To achieve the above purpose, the embodiments of this application provide the following technical solutions:

[0005] On the one hand, a gas transmission device is provided. The gas transmission device includes: a gas mixing structure, an outlet pipe, and a plurality of inlet pipes. A gas mixing chamber is provided in the gas mixing structure. One end of the outlet pipe is connected to the gas mixing structure and communicates with the gas mixing chamber. The two ends of the inlet pipe are respectively a first end and a second end. The first end is connected to the gas mixing structure and communicates with the gas mixing chamber. In the direction of the outlet pipe pointing to the gas mixing chamber, the second end is farther away from the opposite end of the outlet pipe in the gas mixing chamber than the first end. Among them, the direction in which the second end points to the first end points to a first part of the gas mixing chamber, where the first part is a part of the gas mixing chamber that is away from the outlet pipe with a reference plane as the boundary. The reference plane passes through the connection between the inlet pipe and the chamber wall of the gas mixing chamber and is perpendicular to the direction of the outlet pipe pointing to the gas mixing chamber.

[0006] In a gas transmission device, multiple reaction gases can enter a gas mixing chamber through an intake pipe, and then the multiple reaction gases can be mixed in the gas mixing chamber. The reaction gases after mixing in the gas mixing chamber can be discharged through an outlet pipe. Among them, since in the direction pointing from the outlet pipe to the gas mixing chamber, the second end is farther from the opposite end of the outlet pipe in the gas mixing chamber than the first end, when the reaction gas flow enters the gas mixing chamber from the intake pipe, the reaction gas flow can flow towards the end of the gas mixing chamber away from the outlet pipe, and then under the action of the gas flow power, the reaction gas flow can "turn around" in the gas mixing chamber, that is, flow towards the outlet pipe, thereby increasing the flow path of the reaction gas flow in the gas mixing chamber, so as to improve the uniformity of the mixing of multiple reaction gases, that is, to improve the distribution uniformity of multiple atoms in the gas mixing chamber. Therefore, when the mixed reaction gas flows to the wafer, the multiple atoms in the mixed gas are more evenly distributed, thereby improving the distribution uniformity of multiple atoms in the atomic film formed on the wafer.

[0007] In some embodiments, along the direction pointing from the outlet pipe to the gas mixing chamber, the cross-sectional area of the gas mixing chamber first increases and then decreases.

[0008] With such a setting, the cross-sectional area of the end of the gas mixing chamber close to the outlet pipe is small, which is convenient for connecting the gas mixing chamber to the outlet pipe.

[0009] In some embodiments, the chamber wall of the gas mixing chamber is spherical-crowned, and the outlet pipe is located at the bottom of the spherical crown.

[0010] Among them, by setting the chamber wall of the gas mixing chamber to be spherical-crowned, the cross-sectional area of the gas mixing chamber can first increase and then decrease along the direction pointing from the outlet pipe to the gas mixing chamber.

[0011] In some embodiments, at least one intake pipe has a reference line that is tangent to the chamber wall of the gas mixing chamber at the connection between the reference line and the chamber wall, where the reference line connects the first end and the second end of the intake pipe and is parallel to the extending direction of the intake pipe.

[0012] Among them, the reference line on the intake pipe is tangent to the chamber wall of the gas mixing chamber at the connection between the reference line and the chamber wall. Therefore, when the reaction gas flow enters the gas mixing chamber along the tangent of the gas mixing chamber, the reaction gas flow can move along the chamber wall of the gas mixing chamber, thereby increasing the flow path of the reaction gas flow in the gas mixing chamber, increasing the uniformity of the distribution of multiple atoms after mixing of the reaction gas flow in the gas mixing chamber, and further improving the uniformity of the distribution of multiple atoms in the atomic film formed on the wafer.

[0013] In some embodiments, among the multiple intake pipes, there are at least two first - type intake pipes; the at least two first - type intake pipes are arranged along the circumferential direction of the gas mixing chamber. Wherein, there is a reference line on the first - type intake pipe that is tangent to the chamber wall of the gas mixing chamber at the connection between the reference line and the chamber wall.

[0014] Among them, the reaction gas flow entering the gas mixing chamber from the first - type intake pipe can move along the chamber wall of the gas mixing chamber to the vertex of the gas mixing chamber, and multiple reaction gas flows can collide at the vertex. In this way, the diffusion degree of the multiple reaction gas flows entering from the first - type intake pipe can be improved, and further, the uniformity of the distribution of atoms of the multiple reaction gas flows in the mixed gas flow can be improved.

[0015] In some embodiments, the included angles between the extending directions of the multiple first - type intake pipes and the central axis of the gas mixing chamber are equal.

[0016] In some embodiments, among the multiple intake pipes, there are also at least two second - type intake pipes. Among them, the at least two first - type intake pipes are arranged along the circumferential direction of the gas mixing chamber. The second - type intake pipes are closer to the outlet pipe than the first - type intake pipes, and the included angle between the second - type intake pipes and the central axis of the gas mixing chamber is equal to the included angle between the first - type intake pipes and the central axis of the gas mixing chamber.

[0017] Among them, by making the included angle between the second - type intake pipes and the central axis of the gas mixing chamber equal to the included angle between the first - type intake pipes and the central axis of the gas mixing chamber, the arrangement of the first - type intake pipes and the second - type intake pipes can be facilitated.

[0018] In some embodiments, the vertex of the gas mixing chamber is located on the central axis of the outlet pipe.

[0019] Among them, by making the vertex of the gas mixing chamber located on the central axis of the outlet pipe, the distance between the vertex of the gas mixing chamber and the outlet pipe can be increased, so that the flow path of the reaction gas flow in the gas mixing chamber can be increased. Further, the uniformity of the distribution of atoms in the reaction gas flow in the mixed gas flow can be improved, and thus the uniformity of the atom distribution in the thin film deposited on the wafer can be improved.

[0020] In some embodiments, the gas mixing chamber is columnar, and the central axis of the outlet pipe is collinear with the central axis of the gas mixing chamber.

[0021] With such an arrangement, it is convenient for the mixed gas flow in the gas mixing chamber to enter the outlet pipe.

[0022] In some embodiments, the multiple intake pipes are arranged in at least one row. Among them, the multiple intake pipes in one row of intake pipes are arranged along the circumferential direction of the gas mixing chamber.

[0023] Among them, in a row of intake pipes, multiple intake pipes can be arranged circumferentially along the gas mixing chamber, so that the distances from the multiple intake pipes to the bottom of the gas mixing chamber are approximately equal. Furthermore, the flow paths of the reaction gas flows entering from the multiple intake pipes in the gas mixing chamber are approximately equal, thereby improving the uniformity of the atomic distribution in the mixed gas flow in the gas mixing chamber, and thus improving the uniformity of the atomic distribution of the film formed on the wafer.

[0024] In some embodiments, multiple intake pipes in a row of intake pipes are arranged at equal intervals circumferentially along the gas mixing chamber.

[0025] With such an arrangement, multiple reaction gas flows introduced by multiple intake pipes in a row of intake pipes can be evenly distributed in the gas mixing chamber, thereby improving the uniformity of the atomic distribution in the mixed gas flow of the multiple reaction gas flows.

[0026] In some embodiments, a gas gathering chamber is further provided in the gas mixing structure, and the outlet pipe is communicated with the gas mixing chamber through the gas gathering chamber; wherein, along the direction from the gas mixing chamber to the outlet pipe, the cross-sectional area of the gas gathering chamber gradually decreases.

[0027] Among them, along the direction from the gas mixing chamber to the outlet pipe, the cross-sectional area of the gas gathering chamber gradually decreases. Therefore, the mixed gas flow in the gas mixing chamber can first gather in the gas gathering chamber, which is convenient for the mixed gas flow to enter the outlet pipe and thus convenient for the gas transmission device to exhaust gas.

[0028] On the one hand, an atomic deposition system is provided, which includes: a deposition chamber and the gas transmission device provided in some of the above embodiments, and the gas transmission device is arranged in the deposition chamber.

[0029] Among them, the atomic deposition system has the same beneficial effects as the gas transmission device provided in some of the above embodiments, and will not be elaborated here. Description of the Drawings

[0030] In order to more clearly illustrate the technical solutions in the present application, the drawings required to be used in some embodiments of the present application will be briefly introduced below. Obviously, the drawings in the following description are only the drawings of some embodiments of the present application. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings. In addition, the drawings in the following description can be regarded as schematic diagrams, and are not limitations on the actual sizes of the products, the actual processes of the methods, the actual timings of the signals, etc. involved in the embodiments of the present application.

[0031] Figure 1 It is a schematic side view structure diagram of an atomic deposition system provided by an embodiment of the present application;

[0032] Figure 2Schematic top view structure diagram of another atomic deposition system provided by an embodiment of the present application;

[0033] Figure 3 Schematic structure diagram of a gas transmission device provided by an embodiment of the present application;

[0034] Figure 4 Schematic diagram of the structure of the gas mixing chamber and the intake pipe in the gas transmission device provided by an embodiment of the present application;

[0035] Figure 5 Flow path diagram of the reaction gas flow in multiple first - type intake pipes after entering the gas mixing chamber;

[0036] Figure 6 Another schematic structure diagram of the gas transmission device provided by an embodiment of the present application;

[0037] Figure 7 Concentration distribution cross - sectional view at the outlet pipe of the first test device;

[0038] Figure 8 Concentration distribution cross - sectional view at the outlet pipe of the second test device;

[0039] Figure 9 Another concentration distribution cross - sectional view of La and O3 at the outlet pipe of the first test device and another concentration distribution cross - sectional view of La and O3 at the outlet pipe of the second test device;

[0040] Figure 10 Another concentration distribution cross - sectional view of Zr and Hf at the outlet pipe of the first test device and another concentration distribution cross - sectional view of Zr and Hf at the outlet pipe of the second test device;

[0041] Figure 11 Concentration histograms of the first test device and the second test device at the outlet pipe. Detailed implementation manners

[0042] Next, the technical solutions in some embodiments of the present disclosure will be clearly and completely described in conjunction with the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by those of ordinary skill in the art belong to the scope of protection of the present disclosure.

[0043] Unless the context otherwise requires, throughout the specification and claims, the term "comprise" and its other forms, such as the third-person singular form "comprises" and the present participle form "comprising", are construed as open, inclusive meanings, that is, "including, but not limited to". In the description of the specification, terms such as "some embodiments", "example", or "some examples" are intended to indicate that specific features, structures, materials, or characteristics related to the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representations of the above terms do not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials, or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0044] Hereinafter, the terms "first" and "second" are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the embodiments of the present disclosure, unless otherwise stated, the meaning of "a plurality" is two or more.

[0045] As used herein, "substantially" or includes the stated value and the average value within an acceptable deviation range of the specific value, where the acceptable deviation range is determined by those of ordinary skill in the art considering the measurement being discussed and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system).

[0046] As used herein, "parallel", "perpendicular", "equal" include the stated situations and situations similar to the stated situations, and the range of the similar situations is within an acceptable deviation range, where the acceptable deviation range is determined by those of ordinary skill in the art considering the measurement being discussed and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallel and approximate parallel, where the acceptable deviation range of approximate parallel may be, for example, within 5° deviation; "perpendicular" includes absolute perpendicular and approximate perpendicular, where the acceptable deviation range of approximate perpendicular may also be, for example, within 5° deviation. "Equal" includes absolute equality and approximate equality, where the acceptable deviation range of approximate equality may be, for example, that the difference between the two equal ones is less than or equal to 5% of either one of them.

[0047] Figure 1 The side view structural schematic diagram of an atomic deposition system 1000 provided for the embodiments of the present application. Among them, in Figure 1In it, the arrow is used to indicate the flow direction of the gas.

[0048] Please refer to Figure 1 , the atomic deposition system 1000 includes a gas transfer device 100 and a deposition chamber 200. Among them, the gas transfer device 100 is disposed inside the deposition chamber 200.

[0049] Exemplarily, the atomic deposition system 1000 can be used to deposit a HiK (High K, high dielectric constant) thin film on a wafer 300.

[0050] Among them, the wafer 300 can be placed inside the deposition chamber 200, and the gas transfer device 100 can input the atoms to be deposited into the deposition chamber 200 in the form of an air flow. Among them, multiple atom air flows to be deposited can be mixed inside the gas transfer device 100. The atoms in the mixed reaction gas entering the deposition chamber 200 can be deposited on the wafer 300 to form an atomic thin film.

[0051] In some examples, the atomic deposition system 1000 may further include a support table 400. Among them, the support table 400 is connected to the deposition chamber 200, and thus the deposition chamber 200 can support the support table 400. Exemplarily, the support table 400 may include a connecting column 410 and a support portion 420. Among them, one end of the connecting column 410 is connected to the support portion 420, and the connecting column 410 can also be connected to the deposition chamber 200, while the support portion 420 can be in a plate shape, and the wafer 300 can be placed on a surface of the support portion 420 facing away from the connecting column 410.

[0052] Exemplarily, the projection of the gas transfer device 100 in the stacking direction of the wafer 300 and the support portion 420 can cover a part of the support portion 420, and the support portion 420 and the gas transfer device 100 are spaced apart.

[0053] Please continue to refer to Figure 1 , in some examples, the atomic deposition system 1000 may further include a flow guiding device 600. The flow guiding device 600 may include a first air outlet pipe 610, a second air outlet pipe 620 and a confluence pipe 630. Among them, one end of the first air outlet pipe 610 is located on one side where the support portion 420 is connected to the connecting column 410, and the other end of the first air outlet pipe 610 is connected to one end of the confluence pipe 630. One end of the second air outlet pipe 620 is located on one side of the support portion 420, and the other end of the second air outlet pipe 620 is connected to one end of the confluence pipe 630.

[0054] Please continue to refer to Figure 1, the atomic deposition system 1000 may further include a gas diffusion device 500. The gas diffusion device 500 may be connected to the gas delivery device 100, and then the mixed reaction gas flow in the gas delivery device 100 may enter the gas diffusion device 500 and pass through the gas diffusion device 500.

[0055] There is a gap between the gas diffusion device 500 and the support table 400. Therefore, a receiving space may be formed between the gas diffusion device 500 and the support table 400.

[0056] The wafer 300 may be disposed on the support portion 420 and located between the support portion 420 and the gas diffusion device 500. The gas delivery device 100 may be located on one side of the gas diffusion device 500.

[0057] Among them, the reaction gas flow may be mixed in the gas delivery device 100 and then transported by the gas delivery device 100 to the gas diffusion device 500. The mixed reaction gas flow ejected from the gas diffusion device 500 may flow through the surface of the wafer 300, and the atoms in the mixed reaction gas flow may be deposited on the wafer 300 to form an atomic thin film. The gas flow passing through the wafer 300 may enter the first gas outlet pipe 610. In addition, the mixed reaction gas flow ejected from the gas diffusion device 500 may also diffuse to other areas of the deposition chamber 200, and the gas diffused to other areas may enter the second gas outlet pipe 620. Among them, the gas in the first gas outlet pipe 610 and the second gas outlet pipe 620 may converge into the confluence pipe 630 and then be led out by the confluence pipe 630.

[0058] Figure 2 FIG. is a top view structural schematic diagram of another atomic deposition system 1000 provided by an embodiment of the present application. Among them, in Figure 2 only the gas delivery device 100, the deposition chamber 200 and the gas diffusion device 500 of the atomic deposition system 1000 are shown.

[0059] Please refer to Figure 2 , a gas diffusion cavity is provided in the gas diffusion device 500. Among them, the gas diffusion device 500 may be in a horn shape. For example, the two ends of the gas diffusion cavity are an air inlet and an air outlet respectively. Among them, the air inlet is connected to the gas delivery device 100 (as Figure 1 shown), and the area of the air outlet is larger than the area of the air inlet.

[0060] For example, along the direction from the air inlet to the air outlet, the cross-sectional area of the gas diffusion cavity of the gas delivery device 100 gradually increases.

[0061] The mixed reaction gas output by the gas delivery device 100 may be further mixed in the gas diffusion cavity, thereby improving the uniformity of the distribution of various atoms in the mixed gas.

[0062] The area of the air outlet is larger than that of the air inlet, so as to increase the coverage area when the mixed gas is ejected from the air outlet, and further improve the uniformity of the coverage of the atoms in the mixed gas on the wafer 300.

[0063] It can be understood that the embodiments of the present application do not limit the types, quantities and other characteristics of the atoms in the reaction gas flow.

[0064] Since the atoms in the mixed reaction gas flow are unevenly distributed, the distribution uniformity of various atoms in the atomic thin film deposited on the wafer 300 will be poor.

[0065] In some embodiments, the support table 400 can rotate, thereby driving the wafer 300 to rotate, so as to improve the uniformity of the distribution of various atoms in the atomic thin film. However, in this embodiment, it is necessary to consider both the movement of the support table 400 and the vacuum tightness of the deposition chamber 200, resulting in complex hardware design and high cost.

[0066] Based on this, the embodiments of the present application provide a gas transmission device 100.

[0067] Figure 3 It is a schematic structural diagram of the gas transmission device 100 provided by the embodiments of the present application.

[0068] Please refer to Figure 3 , the gas transmission device 100 includes: a gas mixing structure 110, an air outlet pipe 120 and a plurality of air inlet pipes 130. A gas mixing cavity 111 is arranged in the gas mixing structure 110. One end of the air outlet pipe 120 is connected to the gas mixing structure 110 and communicates with the gas mixing cavity 111. The two ends of the air inlet pipe 130 are respectively a first end 131 and a second end 132. The first end 131 is connected to the gas mixing structure 110 and communicates with the gas mixing cavity 111. In the direction of the air outlet pipe 120 pointing to the gas mixing cavity 111, the second end 132 is farther from the opposite end of the air outlet pipe 120 in the gas mixing cavity 111 than the first end 131.

[0069] The direction indicated by the arrow F3 is the direction of the air outlet pipe 120 pointing to the gas mixing cavity 111. For the convenience of description, the direction of the air outlet pipe 120 pointing to the gas mixing cavity 111 is defined as the third direction F3.

[0070] Among them, the air inlet pipe 130 can be a straight pipe. Of course, the air inlet pipe 130 can also not be straight. For example, the air inlet pipe 130 can be an arc-shaped pipe.

[0071] Among them, a variety of reaction gases can enter the gas mixing chamber 111 through the inlet pipe 130, and then the various reaction gases can be mixed in the gas mixing chamber 111. Among them, the inlet pipe 130 can extend outside the deposition chamber 200.

[0072] Among them, one path of reaction gas can be introduced into the gas mixing chamber 111 through one inlet pipe 130. The types of reaction gases can be less than the number of inlet pipes 130, and other non-reactive gases can be introduced into the redundant inlet pipes 130.

[0073] The reaction gases mixed in the gas mixing chamber 111 can be discharged through the outlet pipe 120. Among them, one end of the outlet pipe 120 is connected to the gas mixing chamber 111, and the other end can be connected to the inlet of the gas diffusion device 500 (as Figure 1 shown), so that the mixed reaction gases in the gas mixing chamber 111 can enter the reaction chamber through the gas diffusion device 500.

[0074] Among them, the gas mixing chamber 111 can include two opposite ends. Among them, one end is connected to the outlet pipe 120, and the other end is the end far from the outlet pipe 120. Among them, the end of the gas mixing chamber 111 far from the outlet pipe 120 is the opposite end of the outlet pipe 120 in the gas mixing chamber 111.

[0075] In the third direction F3, the second end 132 is farther from the opposite end of the outlet pipe 120 in the gas mixing chamber 111 than the first end 131. At this time, the distance H4 between the opposite end of the outlet pipe 120 in the gas mixing chamber 111 and the second end 132 in the third direction F3 is greater than the distance H3 between the opposite end of the outlet pipe 120 in the gas mixing chamber 111 and the first end 131 in the third direction F3.

[0076] Among them, the direction in which the second end 132 points to the first end 131 points to the first part 1111 of the gas mixing chamber 111. Among them, the first part 1111 is bounded by the reference plane B-B', which is a part of the gas mixing chamber 111 that faces away from the outlet pipe 120. The reference plane B-B' passes through the connection between the inlet pipe 130 and the chamber wall of the gas mixing chamber 111 and is perpendicular to the direction in which the outlet pipe 120 points to the gas mixing chamber 111.

[0077] As Figure 3 shown, the direction indicated by the arrow F1 is the direction in which the second end 132 points to the first end 131. Among them, the direction in which the second end 132 points to the first end 131 can be parallel to the extension direction of the inlet pipe 130. For the convenience of description, the direction in which the second end 132 points to the first end 131 is defined as the first direction F1.

[0078] The part of the gas mixing chamber 111 between the reference plane B-B' and the opposite end of the gas outlet pipe 120 in the gas mixing chamber 111 is the first part 1111.

[0079] Wherein, the connection between the gas outlet pipe 120 and the chamber wall of the gas mixing chamber 111 is a closed notch, and the reference plane B-B' can include a plane passing through any position in the closed notch and perpendicular to the third direction F3. By way of example, the shape of the closed notch can be circular, can be oval, or can also be a polygon such as a rectangle, etc., which will not be listed one by one here.

[0080] Wherein, the first parts corresponding to different inlet pipes 130 can be different. For example, among the four inlet pipes 130 shown in Figure 3 , the first parts corresponding to the two upper inlet pipes 130 can be the same, and the first parts corresponding to the two lower inlet pipes 130 can be the same, wherein the range of the first parts corresponding to the two lower inlet pipes 130 is smaller than the range of the first parts corresponding to the two upper inlet pipes 130.

[0081] Wherein, when the first end 131 of the inlet pipe 130 is virtually extended, the virtual extension part 133 of the inlet pipe 130 can extend to the first part 1111. At this time, the direction in which the second end 132 points to the first end 131 points to the first part 1111 of the gas mixing chamber 111.

[0082] Since in the third direction F3, the second end 132 is farther from the opposite end of the gas outlet pipe 120 in the gas mixing chamber 111 than the first end 131, at this time, the direction in which the second end 132 points to the first end 131, that is, the first direction F1, generally points to the opposite end of the gas outlet pipe 120 in the gas mixing chamber 111. Therefore, when the reaction gas flow enters the gas mixing chamber 111 from the inlet pipe 130, the reaction gas flow can flow towards the end far from the gas outlet pipe 120, and then under the action of the gas flow power, the reaction gas flow can "turn around" in the gas mixing chamber 111, that is, flow towards the gas outlet pipe 120, so as to increase the flow path of the reaction gas flow in the gas mixing chamber 111, thereby improving the uniformity of the mixing of multiple reaction gases, that is, improving the distribution uniformity of multiple atoms in the gas mixing chamber 111. Therefore, when the mixed reaction gas flows to the wafer 300, the multiple atoms in the mixed gas are more uniformly distributed, thereby improving the distribution uniformity of multiple atoms in the atomic film formed on the wafer 300.

[0083] By way of example, the cross-section of the inlet pipe 130 can be circular. Of course, the cross-section of the inlet pipe 130 can also be other polygons, which are not limited in the embodiments of the present application.

[0084] Exemplarily, the cross-section of the air outlet pipe 120 can be circular. Of course, the cross-section of the air outlet pipe 120 can also be in other shapes, which is not limited in the embodiments of the present application.

[0085] In some examples, among the multiple intake pipes 130, the extending directions of the multiple intake pipes 130 can be different from each other, or the extending directions of some of the intake pipes 130 are different, while the extending directions of some of the intake pipes 130 can be the same.

[0086] In some examples, the number of the intake pipes 130 can be 3, 4, 5, 6 or even more. In the embodiments of the present application, the number of the intake pipes 130 is not limited. In Figure 3 this case, taking 4 intake pipes 130 as an example, the gas transmission device 100 provided in the present application is exemplarily described.

[0087] In some embodiments, along the direction in which the air outlet pipe 120 points to the gas mixing chamber 111, the cross-sectional area of the gas mixing chamber 111 first increases and then decreases.

[0088] Among them, the cross-section of the gas mixing chamber 111 refers to the section of the gas mixing chamber 111 on the plane perpendicular to the third direction F3.

[0089] Along the third direction F3, the cross-sectional area of the gas mixing chamber 111 first increases and then decreases. Therefore, as Figure 3 shown, in the side view of the gas transmission device 100, the chamber wall of the gas mixing chamber 111 can bulge in the direction away from the intake pipe 130.

[0090] The gas mixing chamber 111 can include a first region 1112 and a second region 1113. Among them, the first region 1112 is closer to the air outlet pipe 120 than the second region 1113. Along the third direction F3, the cross-sectional area of the first region 1112 gradually increases, while the cross-sectional area of the second region 1113 gradually decreases. Among them, the intake pipe 130 can communicate with the first region 1112 or the second region 1113.

[0091] By making the cross-sectional area of the gas mixing chamber 111 first increase and then decrease along the third direction F3, at this time, the cross-sectional area of the end of the gas mixing chamber 111 close to the air outlet pipe 120 is smaller, so that it is convenient to connect the gas mixing chamber 111 with the air outlet pipe 120.

[0092] In some examples, the chamber wall of the gas mixing chamber 111 is a surface of revolution. Among them, the surface formed by a plane curve rotating around a fixed straight line in the plane where it is located is called a surface of revolution; the fixed straight line is called the axis of the solid of revolution; the geometric body enclosed by the closed surface of revolution is called a solid of revolution. That is to say, the gas mixing chamber 111 can be a solid of revolution.

[0093] Among them, the central axis of the gas mixing chamber 111 can be collinear with the central axis of the air outlet pipe 120. With such a setting, the structure of the air outlet pipe 120 connected to the gas mixing structure 110 can be relatively regular.

[0094] Please refer to Figure 3 , in some embodiments, the cavity wall of the gas mixing chamber 111 is spherical crown-shaped, and the air outlet pipe 120 is located at the bottom of the spherical crown.

[0095] Among them, a spherical crown refers to the curved surface remaining after a spherical surface is intercepted by a plane. The intercepted circular surface is the bottom, and the part of the diameter perpendicular to the circular surface intercepted is the height. A spherical crown is a surface of revolution.

[0096] In some examples, the cavity wall of the spherical crown-shaped gas mixing chamber 111 can include a curved surface and a bottom surface. At this time, the air outlet pipe 120 can be connected to the bottom surface of the gas mixing chamber.

[0097] In some examples, the height of the gas mixing chamber 111 can be greater than, less than, or equal to the radius of the spherical crown.

[0098] Among them, the gas mixing chamber 111 can be spherical crown-shaped or approximately spherical crown-shaped.

[0099] By setting the cavity wall of the gas mixing chamber 111 to be spherical crown-shaped, the cross-sectional area of the gas mixing chamber 111 can first increase and then decrease along the third direction F3.

[0100] Exemplarily, the vertex D of the gas mixing chamber 111 (i.e., the vertex of the spherical crown) can be located on the side of the gas mixing chamber 111 away from the air outlet pipe 120. Among them, the vertex D of the gas mixing chamber 111 refers to the intersection point of the diameter perpendicular to the bottom surface C-C' of the spherical crown and the cavity wall of the gas mixing chamber 111. At this time, the vertex of the gas mixing chamber 111 is located at the opposite end of the air outlet pipe 120 in the gas mixing chamber 111.

[0101] Figure 4 It is a schematic diagram of the structures of the gas mixing chamber 111 and the air inlet pipe 130 in the gas transmission device 100 provided by the embodiments of the present application.

[0102] Please refer to Figure 4 , in some embodiments, at least one air inlet pipe 130 has a reference line L3 that is tangent to the cavity wall of the gas mixing chamber 111 at the connection between the reference line L3 and the cavity wall. Among them, the reference line L3 connects the first end 131 and the second end 132 of the air inlet pipe 130 and is parallel to the extending direction of the air inlet pipe 130.

[0103] Among them, the necessary and sufficient condition for the sphere to be tangent to the straight line is that the distance from the center of the sphere to the straight line is equal to the radius of the sphere. That is to say, in the embodiments of the present application, the distance between the reference line L3 on the intake pipe 130 and the center of the spherical wall of the spherical gas mixing chamber 111 is equal to the radius of the spherical cap.

[0104] Among them, there can be multiple reference lines L3 on the intake pipe 130, and one of the multiple reference lines L3 can be tangent to the chamber wall at the connection of the reference line L3 and the chamber wall.

[0105] For example, when the intake pipe 130 is cylindrical, on one intake pipe 130, one of the multiple reference lines L3 can be tangent to the chamber wall.

[0106] For example, the intake pipe 130 can also include a plane tangent to the chamber wall. At this time, the reference line L3 passing through the connection of the plane and the chamber wall on this plane can be tangent to the chamber wall. At this time, the intake pipe 130 can be a prism, or the intake pipe 130 can also be surrounded by a plane and a curved surface, and this plane can be tangent to the chamber wall.

[0107] Among them, the reference line L3 on the intake pipe 130 is tangent to the chamber wall of the gas mixing chamber 111 at the connection of the reference line L3 and the chamber wall. Therefore, when the reaction gas flow enters the gas mixing chamber 111 along the tangent of the gas mixing chamber 111, the reaction gas flow can move along the chamber wall of the gas mixing chamber 111, thereby increasing the flow path of the reaction gas flow in the gas mixing chamber 111, and thus increasing the uniformity of the distribution of various atoms after mixing in the gas mixing chamber 111, and further improving the uniformity of the distribution of various atoms in the atomic film formed on the wafer 300.

[0108] In some examples, among the multiple intake pipes 130, on some intake pipes 130, there is a reference line L3 that is tangent to the chamber wall of the gas mixing chamber 111 at the connection of the reference line L3 and the chamber wall. For example, the number of intake pipes 130 tangent to the chamber wall of the gas mixing chamber 111 can be one or more.

[0109] For example, in Figure 4 Among the four intake pipes 130 shown, the reference lines L3 on the two intake pipes 130 close to the vertex of the gas mixing chamber 111 are tangent to the chamber wall of the gas mixing chamber 111 at the connection of the reference line L3 and the chamber wall, while any reference line on the two intake pipes 130 far from the vertex of the gas mixing chamber 111 is not tangent to the chamber wall of the gas mixing chamber 111.

[0110] In other examples, each intake pipe 130 has a reference line L3 that is tangent to the chamber wall of the gas mixing chamber 111 at the connection of the reference line L3 and the chamber wall.

[0111] Please continue to refer toFigure 4 , in some embodiments, at least one intake pipe 130 has a reference line L3 that is tangent to a reference circular arc passing through the connection between the reference line L3 and the cavity wall. Among them, the center of the reference circular arc of the gas mixing cavity 111 coincides with the center of the sphere of the gas mixing cavity 111 and passes through the vertex D of the gas mixing cavity 111. It should be noted that the tangent reference line L3 and the reference circular arc are in the same plane.

[0112] By making the intake pipe 130 have a reference line L3 that is tangent to the reference circular arc of the gas mixing cavity 111, in this way, after the reaction gas flow in the intake pipe 130 enters the gas mixing cavity 111, it can move along the reference circular arc and flow to the vertex of the gas mixing cavity 111. Among them, since the distance between the center of the reference circular arc and the vertex is relatively large, this can increase the flow path of the reaction gas flow in the gas mixing cavity 111, thereby improving the diffusion range of the atoms in the reaction gas flow in the mixed gas flow, thereby improving the uniformity of the distribution of the atoms in the mixed gas flow, and thus improving the uniformity of the distribution of the atoms in the thin film deposited on the wafer 300.

[0113] In some examples, among the multiple intake pipes 130, some intake pipes 130 have a reference line L3 that is tangent to a reference circular arc passing through the connection between the reference line L3 and the cavity wall. At this time, the number of intake pipes 130 tangent to the reference circular arc can be one or more. Among them, the reference lines L3 on different intake pipes 130 can be tangent to different reference circular arcs.

[0114] In other examples, among the multiple intake pipes 130, each intake pipe 130 has a reference line L3 that is tangent to a reference circular arc passing through the connection between the reference line L3 and the cavity wall.

[0115] Please refer back Figure 3 , in some embodiments, the vertex D of the gas mixing cavity 111 is located on the central axis L1 of the outlet pipe 120. In other words, the vertex D of the gas mixing cavity 111 is collinear with the central axis L1 of the outlet pipe 120. In addition, it can also be understood that the projection of the outlet pipe 120 in its extending direction can cover the vertex D of the gas mixing cavity 111. At this time, the central axis L1 of the outlet pipe 120 is collinear with the central axis L2 of the gas mixing cavity 111.

[0116] Among them, by making the vertex D of the gas mixing cavity 111 located on the central axis L1 of the outlet pipe 120, the distance between the vertex D of the gas mixing cavity 111 and the outlet pipe 120 can be increased, thereby increasing the flow path of the reaction gas flow in the gas mixing cavity 111, and further improving the uniformity of the distribution of the atoms in the reaction gas flow in the mixed gas flow, thereby improving the uniformity of the distribution of the atoms in the thin film deposited on the wafer 300.

[0117] Please refer to Figure 3 , in some embodiments, multiple intake pipes 130 are arranged in at least one row, wherein the multiple intake pipes 130 in one row of intake pipes 130 are arranged circumferentially around the gas mixing chamber 111.

[0118] Among them, the number of intake pipes 130 in one row of intake pipes 130 can be 2, 3, 4 or even more. In the embodiments of the present application, the number of intake pipes 130 included in one row of intake pipes 130 is not limited.

[0119] Among them, in one row of intake pipes 130, the distance from the first end 131 of each intake pipe 130 to the vertex D in the third direction F3 is equal.

[0120] In the case where the multiple intake pipes 130 are arranged in multiple rows, the multiple rows of intake pipes 130 can be arranged in sequence along the extension direction of the outlet pipe 120.

[0121] Among them, in one row of intake pipes 130, the multiple intake pipes 130 can be arranged circumferentially around the gas mixing chamber 111, so that the distances from the ends of the multiple intake pipes 130 connected to the gas mixing chamber 111 to the bottom of the cavity of the gas mixing chamber 111 are approximately equal. Furthermore, the flow paths of the reaction gas flows entering from the multiple intake pipes 130 in the gas mixing chamber 111 are approximately equal, so as to improve the uniformity of the atomic distribution in the mixed gas flow in the gas mixing chamber 111, thereby improving the uniformity of the atomic distribution of the thin film formed on the wafer 300.

[0122] Please refer to again Figure 3 , in some embodiments, among the multiple intake pipes 130, there are at least two first-type intake pipes 1301, wherein the at least two first-type intake pipes 1301 are arranged circumferentially around the gas mixing chamber 111, and the first-type intake pipe 130 has a reference line L3 on which there is a reference line L3 tangent to the cavity wall of the gas mixing chamber 111 at the connection of the reference line L3 and the cavity wall. For example, a reference line L3 on the first-type intake pipe 130 is tangent to the reference arc passing through the connection of the reference line L3 and the cavity wall.

[0123] Figure 5 is a flow path diagram of the reaction gas flow in the gas mixing chamber 111 after entering from the multiple first-type intake pipes 1301. Among them, in Figure 5 , the label 1301’ refers to the reaction gas flow entering from the first-type intake pipe 1301.

[0124] Please refer to Figure 5, the reaction gas flow 1301' entering the gas mixing chamber 111 from the first type of intake pipe 1301 can move along the chamber wall of the gas mixing chamber 111 to the vertex D of the gas mixing chamber 111, and multiple reaction gas flows 1301' can collide at the vertex D, thereby increasing the diffusion degree of the multiple reaction gas flows 1301' entering from the first type of intake pipe 1301, and further improving the uniformity of the distribution of atoms of the multiple reaction gas flows 1301' in the mixed gas flow.

[0125] In Figure 5 , four reaction gas flows 1301' all enter the gas mixing chamber 111 from the first type of intake pipe 1301.

[0126] Please continue to refer to Figure 3 , in some embodiments, the distances between the multiple first type of intake pipes 1301 and the vertex D of the gas mixing chamber 111 are equal.

[0127] Exemplarily, the angles α between the extending directions of the multiple first type of intake pipes 1301 and the central axis L2 of the gas mixing chamber 111 are equal.

[0128] Exemplarily, the number of the first type of intake pipes 1301 can be 2, 3, 4 or more. In the embodiments of the present application, the number of the first type of intake pipes 1301 is not limited.

[0129] In Figure 3 , taking the number of the first type of intake pipes 1301 being 2 as an example, the embodiments of the present application are illustrated.

[0130] Please refer to again Figure 3 , in some examples, the multiple intake pipes 130 further include at least two second type of intake pipes 1302. The at least two second type of intake pipes 1302 are arranged along the circumferential direction of the gas mixing chamber 111, and the second type of intake pipes 1302 are closer to the outlet pipe 120 than the first type of intake pipes 1301.

[0131] Among them, the distances between the first ends 131 of each second type of intake pipe 1302 and the vertex D in the third direction F3 are equal.

[0132] In some examples, the angle between the second type of intake pipe 1302 and the central axis L2 of the gas mixing chamber 111 is equal to the angle α between the first type of intake pipe 1301 and the central axis L2 of the gas mixing chamber 111. Exemplarily, 0° < α < 90°.

[0133] With such a setting, it is convenient to arrange the first type of intake pipe 1301 and the second type of intake pipe 1302.

[0134] In some examples, the extension line of the second type of intake pipe 1302 may pass through vertex D of the gas mixing chamber 111. Here, the extension line of the second type of intake pipe 1302 refers to the virtual extension of the second type of intake pipe 1302 along the direction pointing to the gas mixing chamber 111. At this time, the virtual extension portion of the second type of intake pipe 1302 may pass through vertex D. In other words, the projection of the second type of intake pipe 1302 in its extension direction may cover vertex D, or rather, the central axis of the second type of intake pipe 1302 is collinear with vertex D.

[0135] Here, since the extension line of the second type of intake pipe 1302 may pass through vertex D of the gas mixing chamber 111, thus, as Figure 5 shown, the reaction gas flow entering the gas mixing chamber 111 from the second type of intake pipe 1302 may move towards vertex D. After the reaction gas flow moves to vertex D, the reaction gas flow may collide with the reaction gas flow 1301', thereby improving the uniformity of the mixing of the reaction gas flow 1301' and the reaction gas flow, that is, improving the uniformity of the atomic distribution in the mixed gas flow, and thus improving the uniformity of the atomic distribution of the thin film formed on the wafer 300.

[0136] In some other examples, the reference line L3 on the second type of intake pipe 1302 is tangent to the reference circular arc passing through the connection of the reference line L3 and the chamber wall.

[0137] The reaction gas flow entering the gas mixing chamber 111 from the second type of intake pipe 1302 may move along the chamber wall of the gas mixing chamber 111 to the chamber bottom of the gas mixing chamber 111, thereby increasing the flow path of the reaction gas flow in the gas mixing chamber 111, and the reaction gas flow may move to vertex D. After the reaction gas flow moves to vertex D, the reaction gas flow may collide with the reaction gas flow 1301', thereby improving the uniformity of the mixing of the reaction gas flow 1301' and the reaction gas flow, that is, improving the uniformity of the atomic distribution in the mixed gas flow, and thus improving the uniformity of the atomic distribution of the thin film formed on the wafer 300.

[0138] In some embodiments, multiple intake pipes 130 in a row of intake pipes 130 are arranged at equal intervals along the circumferential direction of the gas mixing chamber 111.

[0139] With such an arrangement, the multiple reaction gas flows introduced by the multiple intake pipes 130 in a row of intake pipes 130 can be evenly distributed in the gas mixing chamber 111, thereby improving the uniformity of the atomic distribution of the multiple reaction gas flows in the mixed gas flow.

[0140] Exemplarily, multiple first type of intake pipes 1301 are arranged at equal intervals along the circumferential direction of the gas mixing chamber 111.

[0141] For example, when the number of the first type of intake pipes 1301 is two, a reference line L3 on the two first type of intake pipes 1301 can be cut by the same reference arc line. At this time, the two first type of intake pipes 1301 are arranged oppositely in the direction perpendicular to the third direction F3. When the reaction airflows in the two first type of intake pipes 1301 flow along the cavity wall of the gas mixing cavity 111 to the vertex D, the flow directions of the two reaction airflows are opposite. Therefore, the mixing degree of the two reaction airflows can be improved, and further the uniformity of the distribution of atoms in the two reaction airflows in the mixed airflow can be improved.

[0142] In addition, the number of the first type of intake pipes 1301 can also be 3, 4 or more, which will not be listed one by one here.

[0143] Exemplarily, a plurality of second type of intake pipes 1302 are arranged at equal intervals along the circumferential direction of the gas mixing cavity 111.

[0144] Exemplarily, the number of the second type of intake pipes 1302 can be 2, 3, 4 or even more, which will not be listed one by one here.

[0145] Please refer to Figure 3 , a gas gathering cavity 112 is further arranged in the gas mixing structure 110, and the air outlet pipe 120 is communicated with the gas mixing cavity 111 through the gas gathering cavity 112; wherein, along the direction from the gas mixing cavity 111 to the air outlet pipe 120, the cross-sectional area of the gas gathering cavity 112 gradually decreases.

[0146] Among them, the air outlet pipe 120 is connected to one end of the gas gathering cavity 112 far from the gas mixing cavity 111. Among them, the end with a larger cross-sectional area of the gas gathering cavity 112 is connected to the gas mixing cavity 111, while the end with a smaller cross-sectional area of the gas gathering cavity 112 is connected to the gas gathering cavity 112.

[0147] The direction from the gas mixing cavity 111 to the air outlet pipe 120 is the second direction F2. Among them, the second direction F2 can be parallel to the extending direction of the air outlet pipe 120.

[0148] Along the second direction F2, the cross-sectional area of the gas gathering cavity 112 gradually decreases. Therefore, the mixed airflow in the gas mixing cavity 111 can be gathered in the gas gathering cavity 112 first, so as to facilitate the mixed airflow to enter the air outlet pipe 120, and thus facilitate the exhaust of the gas transmission device 100.

[0149] When the gas mixing cavity 111 is spherical crown-shaped, the cavity wall of the spherical crown-shaped gas mixing cavity 111 can include a curved surface, and the end with a larger cross-sectional area of the gas gathering cavity 112 can be connected to the edge of the curved surface of the spherical crown-shaped gas mixing cavity 111.

[0150] Please refer to Figure 3, in some examples, when the gas mixing chamber 111 is spherical-crown-shaped, the diameter D1 of the gas mixing chamber 111 is greater than or equal to 0.03 m and less than or equal to 0.05 m. For example, the diameter D1 of the gas mixing chamber 111 is equal to 0.04 m. Herein, the diameter D1 of the gas mixing chamber 111 refers to the diameter of the sphere corresponding to the gas mixing chamber 111.

[0151] For example, the height H1 of the gas mixing chamber 111 is greater than or equal to 0.02 m and less than or equal to 0.04 m. For example, the height H1 of the gas mixing chamber 111 is equal to 0.03 m.

[0152] For example, the distance H2 between the first end 131 of the first type of intake pipe 1301 and the bottom of the gas mixing chamber 111 is greater than or equal to 0.005 m and less than or equal to 0.015 m. For example, the distance H2 between the first end 131 of the first type of intake pipe 1301 and the bottom of the gas mixing chamber 111 is equal to 0.01 m.

[0153] For example, the distance H3 between the first end 131 of the second type of intake pipe 1302 and the bottom of the gas mixing chamber 111 is greater than or equal to 0.015 m and less than or equal to 0.025 m. For example, the distance H3 between the first end 131 of the first type of intake pipe 1301 and the bottom of the gas mixing chamber 111 is equal to 0.02 m.

[0154] For example, the angle α between the intake pipe 130 (including the first type of intake pipe 1301 and the second type of intake pipe 1302) and the central axis L2 of the gas mixing chamber 111 is greater than or equal to 27° and less than or equal to 33°. For example, the angle α between the intake pipe 130 and the central axis L2 of the gas mixing chamber 111 is equal to 30°.

[0155] For example, the diameter D2 of the intake pipe 130 (including the first type of intake pipe 1301 and the second type of intake pipe 1302) is greater than or equal to 0.245 inch and less than or equal to 0.255 inch. For example, the diameter D2 of the intake pipe 130 is equal to 0.25 inch.

[0156] For example, the length H4 of the intake pipe 130 (including the first type of intake pipe 1301 and the second type of intake pipe 1302) is greater than or equal to 0.015 m and less than or equal to 0.025 m. For example, the length H4 of the intake pipe 130 is equal to 0.02 m.

[0157] For example, the length H5 of the outlet pipe 120 is greater than or equal to 0.015 m and less than or equal to 0.025 m. For example, the length H5 of the outlet pipe 120 is equal to 0.02 m.

[0158] For example, the diameter D3 of the air outlet pipe 120 is greater than or equal to 0.005 m and less than or equal to 0.015 m. For example, the diameter D3 of the air outlet pipe 120 is equal to 0.01 m.

[0159] Figure 6 Another schematic diagram of the structure of the gas transmission device 100 provided in an embodiment of the present application.

[0160] See also Figure 6 In some embodiments, the gas mixing chamber 111 is columnar, and the central axis L1 of the gas outlet pipe 120 is collinear with the central axis L2 of the gas mixing chamber 111 .

[0161] Such a configuration can facilitate the mixed gas flow in the gas mixing chamber 111 to enter the gas outlet pipe 120 .

[0162] For example, the gas mixing chamber 111 may be cylindrical, and the first ends 131 of the plurality of air inlet pipes 130 are connected to the side surface of the gas mixing chamber 111 .

[0163] In some examples, the cylindrical gas mixing chamber 111 includes a side surface and two oppositely disposed circular surfaces, the two circular surfaces are respectively connected to both sides of the side surface in the extension direction of the outlet pipe 120, and the outlet pipe 120 can be connected to one of the circular surfaces.

[0164] In other examples, the cylindrical gas mixing chamber 111 may include a side surface and a circular surface, the circular surface is connected to one side of the side surface in the extension direction of the gas outlet pipe 120, the other side of the side surface may be connected to the gas collecting chamber 112, and the side of the gas collecting chamber 112 away from the gas mixing chamber 111 may be connected to the gas outlet pipe 120. The circular surface may serve as the bottom surface of the gas mixing chamber 111.

[0165] Among them, the direction in which the second end 132 of each inlet pipe 130 points to the first end 131 is directed to the circular surface of the gas mixing chamber 111 away from the outlet pipe 120, thereby increasing the flow path of the reaction gas flow in the gas mixing chamber 111, thereby improving the uniformity of mixing of multiple reaction gases, that is, improving the uniformity of distribution of multiple atoms in the gas mixing chamber 111.

[0166] In some examples, when the gas mixing chamber 111 is cylindrical, the angles between the central axis of each of the air inlet pipes 130 and the central axis L2 of the gas mixing chamber 111 are equal.

[0167] Exemplarily, at least two third - type intake pipes 1303 are included in the plurality of intake pipes 130, and the central axis of the third - type intake pipe 1303 is collinear with the center of the circular surface. At this time, the reaction gas flow entering the gas mixing chamber 111 from the third - type intake pipe 1303 can move to the circumference of the circular surface and collide at the circumference of the circular surface, thereby improving the uniformity of the mixing of the reaction gas flows, that is, improving the uniformity of the atomic distribution in the mixed gas flow, and thus improving the uniformity of the atomic distribution of the thin film formed on the wafer 300.

[0168] Exemplarily, at least two fourth - type intake pipes 1304 may also be included in the plurality of intake pipes 130, and the at least two fourth - type intake pipes 1304 are located on the side of the at least two third - type intake pipes 1303 closer to the outlet pipe 120. Among them, the included angle between the central axis of the third - type intake pipe 1303 and the central axis of the gas mixing chamber 111 is equal to the included angle between the central axis of the fourth - type intake pipe 1304 and the central axis of the gas mixing chamber 111.

[0169] With such a setting, it is convenient to arrange the third - type intake pipe 1303 and the fourth - type intake pipe 1304.

[0170] In some examples, when the gas mixing chamber 111 is cylindrical, the plurality of intake pipes 130 can also be arranged in at least one row, and among them, the plurality of intake pipes 130 in one row of intake pipes 130 are arranged along the circumferential direction of the gas mixing chamber 111.

[0171] In some examples, when the gas mixing chamber 111 is cylindrical, the diameter D1 of the gas mixing chamber 111 is greater than or equal to 0.02 m and less than or equal to 0.04 m. Exemplarily, the diameter D1 of the gas mixing chamber 111 is equal to 0.03 m.

[0172] Exemplarily, the height H1 of the gas mixing chamber 111 is greater than or equal to 0.02 m and less than or equal to 0.04 m. Exemplarily, the diameter H1 of the gas mixing chamber 111 is equal to 0.03 m.

[0173] For example, the distance H2 between the first end 131 of the first type of intake pipe 1301 and the bottom of the gas mixing chamber 111, the distance H3 between the first end 131 of the second type of intake pipe 1302 and the bottom of the gas mixing chamber 111, the angle α between the intake pipe 130 (including the third type of intake pipe 1303 and the fourth type of intake pipe 1304) and the central axis L2 of the gas mixing chamber 111, the diameter D2 of the intake pipe 130 (including the third type of intake pipe 1303 and the fourth type of intake pipe 1304), the length H4 of the intake pipe 130 (including the third type of intake pipe 1303 and the fourth type of intake pipe 1304), the length H5 of the outlet pipe 120, and the diameter D3 of the outlet pipe 120 can refer to the values of each parameter when the surface of the gas mixing chamber 111 is spherical-crowned, and will not be elaborated here.

[0174] The following conducts simulation analysis on the first test device and the second test device. Among them, the first test device is Figure 3 the provided gas transmission device 100, and the second test device is Figure 6 the provided gas transmission device 100.

[0175] Among them, in the first test device, the diameter D1 of the gas mixing chamber 111 is equal to 0.04 m, the height H1 of the gas mixing chamber 111 is equal to 0.03 m, the distance H2 between the first end 131 of the first type of intake pipe 1301 and the bottom of the gas mixing chamber 111 is equal to 0.015 m, and the distance H3 between the first end 131 of the second type of intake pipe 1302 and the bottom of the gas mixing chamber 111 is equal to 0.025 m.

[0176] In the second test device, the diameter D1 of the gas mixing chamber 111 is equal to 0.03 m, the height H1 of the gas mixing chamber 111 is equal to 0.035 m, the distance H2 between the first end 131 of the first type of intake pipe 1301 and the bottom of the gas mixing chamber 111 is equal to 0.01 m, and the distance H3 between the first end 131 of the second type of intake pipe 1302 and the bottom of the gas mixing chamber 111 is equal to 0.02 m.

[0177] In the first test device and the second test device: the angle α between the intake pipe 130 and the central axis L2 of the gas mixing chamber 111 is equal to 30°, the diameter D2 of the intake pipe 130 is equal to 0.25 inch, the length H4 of the intake pipe 130 is equal to 0.02 m, the length H5 of the outlet pipe 120 is equal to 0.02 m, and the diameter D3 of the outlet pipe 120 is equal to 0.01 m.

[0178] Among them, La (lanthanum) gas flow is introduced into the left first type of intake pipe 1301, Zr (zirconium) gas flow is introduced into the right first type of intake pipe 1301, O3 (ozone) gas flow is introduced into the left second type of intake pipe 1302, and Hf (hafnium) gas flow is introduced into the right second type of intake pipe 1302.

[0179] Figure 7 It is the sectional view of the concentration distribution at the air outlet pipe 120 of the first test device; Figure 8 It is the sectional view of the concentration distribution at the air outlet pipe 120 of the second test device. Among them, in Figure 7 and Figure 8 , circles of different colors represent different atoms.

[0180] Comparison Figure 7 and Figure 8 shows that compared with the second test device, the four-way airflows in the first test device are more fully mixed, and the improvement effect of the distribution of Zr atoms in the mixed airflows is the most obvious, followed by O3.

[0181] Figure 9 It is another sectional view of the concentration distribution of La and O3 at the air outlet pipe 120 of the first test device and another sectional view of the concentration distribution of La and O3 at the air outlet pipe 120 of the second test device, Figure 10 It is another sectional view of the concentration distribution of Zr and Hf at the air outlet pipe 120 of the first test device and another sectional view of the concentration distribution of Zr and Hf at the air outlet pipe 120 of the second test device. Among them, in Figure 9 and Figure 10 , different filling patterns represent different concentrations.

[0182] Among them, in Figure 9 and Figure 10 , the larger the area of the region where the concentration of a certain atom reaches 15×10 -2 in the air outlet pipe 120, the worse the distribution uniformity of the atom in the air outlet pipe 120. Similarly, the larger the area of the region where the concentration of a certain atom is lower than 6×10 -2 in the air outlet pipe 120, the worse the distribution uniformity of the atom in the air outlet pipe 120.

[0183] From Figure 9 and Figure 10 it can be observed that the distribution uniformity of Zr in the first test device is better than that in the second test device, the distribution uniformity of O3 in the first test device is better than that in the second test device, and the distribution uniformity of Hf in the first test device is better than that in the second test device.

[0184] Figure 11 It is the concentration histogram of the first test device and the second test device at the air outlet pipe 120. Among them, in Figure 11 , the more concentrated the histogram distribution, the narrower the non-zero region, and the more ideal the image is, being thinner and taller.

[0185] From Figure 11It can be seen that, compared with the second test device, the distribution uniformity of Zr, O3, and Hf in the first test device is better.

[0186] As described above, it is only the specific implementation manner of this application, but the protection scope of this application is not limited thereto. Any person skilled in the art within the technical scope disclosed by this application, thinking of changes or substitutions, should be covered within the protection scope of this application. Therefore, the protection scope of this application should be subject to the protection scope of the claims.

Claims

1. A gas transmission device, characterized in that, Comprising: A gas mixing structure, within which a gas mixing chamber is provided; An outlet pipe, one end of which is connected to the gas mixing structure and communicates with the gas mixing chamber; A plurality of inlet pipes, both ends of each inlet pipe being a first end and a second end respectively. The first end is connected to the gas mixing structure and communicates with the gas mixing chamber. In the direction of the outlet pipe pointing to the gas mixing chamber, the second end is farther from the opposite end of the outlet pipe in the gas mixing chamber than the first end.

2. The gas transmission device according to claim 1, wherein: Along the direction of the outlet pipe pointing to the gas mixing chamber, the cross-sectional area of the gas mixing chamber first increases and then decreases.

3. The gas transmission device according to claim 2, wherein: The chamber wall of the gas mixing chamber is spherical-crown-shaped, and the outlet pipe is located at the bottom of the spherical crown.

4. The gas transmission device according to claim 3, wherein: At least one of the inlet pipes has a reference line that is tangent to the chamber wall of the gas mixing chamber at the connection of the reference line and the chamber wall. Among them, the reference line connects the first end and the second end of the inlet pipe and is parallel to the extending direction of the inlet pipe.

5. The gas transmission device according to claim 4, wherein: Among the plurality of inlet pipes, there are at least two first-type inlet pipes; the at least two first-type inlet pipes are arranged along the circumferential direction of the gas mixing chamber. Among them, one of the first-type inlet pipes has a reference line that is tangent to the chamber wall of the gas mixing chamber at the connection of the reference line and the chamber wall.

6. The gas transmission device according to claim 5, wherein: Among the plurality of inlet pipes, there are also at least two second-type inlet pipes. Among them, the at least two second-type inlet pipes are arranged along the circumferential direction of the gas mixing chamber. The second-type inlet pipes are closer to the outlet pipe than the first-type inlet pipes, and the angle between the second-type inlet pipes and the central axis of the gas mixing chamber is equal to the angle between the first-type inlet pipes and the central axis of the gas mixing chamber.

7. The gas transmission device according to any one of claims 3-6, wherein: The vertex of the gas mixing chamber is located on the central axis of the outlet pipe.

8. The gas transmission device according to claim 1, wherein: The gas mixing chamber is columnar, and the central axis of the outlet pipe coincides with the central axis of the gas mixing chamber.

9. The gas transmission device according to any one of claims 1-8, wherein: The plurality of inlet pipes are arranged in at least one row. Among them, the plurality of inlet pipes in one row of inlet pipes are arranged along the circumferential direction of the gas mixing chamber.

10. The gas transmission device according to claim 9, wherein: The plurality of inlet pipes in one row of inlet pipes are arranged at equal intervals along the circumferential direction of the gas mixing chamber.

11. The gas transmission device according to any one of claims 1-10, wherein: A gas gathering chamber is further provided within the gas mixing structure, and the outlet pipe communicates with the gas mixing chamber through the gas gathering chamber; Wherein, along the direction from the gas mixing chamber towards the air outlet pipe, the cross-sectional area of the gas concentrating chamber gradually decreases.

12. An atomic deposition system, characterized in that, Comprising: A deposition chamber; The gas transmission device according to any one of claims 1-11, disposed in the deposition chamber.

Images