Method for preparing single-crystal high-temperature alloy seed crystal by using five-axis water-jet guided laser processing system

Abstract

The invention discloses a method for preparing a single-crystal high-temperature alloy seed crystal by using a five-axis water-jet guided laser processing system. The method comprises the following steps: S1, preparing a single-crystal high-temperature alloy test plate by combining a directional solidification process with a spiral crystal selection method; s2, after macroscopically corroding the single-crystal high-temperature alloy test plate, measuring included angles alpha and beta between dendrites on two side surfaces of the single-crystal high-temperature alloy test plate and a single-crystal growth direction; then, carrying out chemical corrosion on the cross section of the single-crystal high-temperature alloy test plate, and measuring included angles A and B between secondary dendrites on the cross section and the horizontal axial direction; s3, calculating direction vectors of primary dendritic crystals and secondary dendritic crystals of the single-crystal high-temperature alloy test plate; s4, according to the direction vectors of the primary dendritic crystal and the secondary dendritic crystal of the single-crystal high-temperature alloy test plate, the direction vector of the target seed crystal orientation is calculated; and S5, clamping the single-crystal high-temperature alloy test plate on a workbench of a five-axis water-jet guided laser processing system, and carrying out directional cutting by adopting the five-axis water-jet guided laser processing system to obtain a target seed crystal.

Description

Technical Field

[0001] This application relates to the technical field of alloy seed crystal processing, and particularly to a method for preparing single crystal superalloy seed crystals using a five-axis water-guided laser processing system and single crystal superalloy seed crystals. Background Art

[0002] Nickel-based single crystal superalloys have excellent comprehensive properties in high-temperature environments and are the main materials for manufacturing advanced aeroengine and gas turbine blades. Currently, the main process methods for manufacturing single crystal superalloy blades are the selection crystal method and the seed crystal method. The selection crystal method generally can only obtain single crystal blades with a

[001] preferred orientation, and the orientation often deviates to a certain extent, and it is impossible to prepare single crystal blades with a specific orientation. In contrast, the seed crystal method can accurately control the three-dimensional orientation of single crystal blades, thereby preparing single crystal blades with a specific crystal orientation, which is of great significance in scientific research and production.

[0003] To prepare single crystal blades using the seed crystal method, high-quality seed crystals need to be prepared first. The conventional process is to first measure the three-dimensional crystal orientation of a large single crystal using an X-ray diffractometer, and then obtain the seed crystal with the target orientation through electrical discharge machining with orientation wire cutting. In the conventional seed crystal preparation process, not only expensive X-ray diffractometers and complex special three-dimensional steering jigs are required for assistance, but also there is a remelting layer on the surface of the seed crystal processed by electrical discharge wire cutting, which increases the probability of casting defects in single crystal blades. These problems will lead to high costs and complex processes in the preparation of single crystal superalloy seed crystals, and the accuracy and quality of the seed crystals are often difficult to control. Therefore, how to prepare high-precision and high-quality seed crystals has become an urgent technical problem to be solved. Summary of the Invention

[0004] In view of this, an embodiment of this application provides a method for preparing single crystal superalloy seed crystals using a five-axis water-guided laser processing system. The single crystal superalloy seed crystals prepared by this method have higher precision and better quality, and can meet the requirements of batch production and engineering applications.

[0005] According to one aspect of this application, a method for preparing single crystal superalloy seed crystals using a five-axis water-guided laser processing system is provided, including the following steps:

[0006] S1. Prepare a single crystal superalloy test plate using a directional solidification process combined with a spiral crystal selection method. The adjacent two side surfaces of the single crystal superalloy test plate have a perpendicular relationship, and the growth direction of the single crystal superalloy test plate is determined based on the crystallographic orientation of

[001] ;

[0007] S2. After macroscopically etching the single-crystal superalloy test plate, measure the angles α and β between the dendrites and the single-crystal growth direction on the two side surfaces of the single-crystal superalloy test plate; then, chemically etch the cross-section of the single-crystal superalloy test plate and measure the angles A and B between the secondary dendrites and the horizontal axis on the cross-section.

[0008] S3. Calculate the direction vectors of the primary dendrites and secondary dendrites of the single-crystal superalloy test plate based on the α angle, β angle, A angle, and B angle.

[0009] S4. Calculate the direction vector of the target seed crystal orientation based on the direction vectors of the primary dendrites and secondary dendrites of the single-crystal superalloy test plate.

[0010] S5. Clamp the single-crystal superalloy test plate on the workbench of the five-axis water-jet guided laser processing system, and use the five-axis water-jet guided laser processing system for directional cutting according to the direction vector of the target seed crystal orientation to obtain the target seed crystal.

[0011] According to another aspect of the present application, there is provided a single-crystal superalloy seed crystal, which is prepared by the method for preparing a single-crystal superalloy seed crystal using a five-axis water-jet guided laser processing system as described above.

[0012] By means of the above technical solutions, a method for preparing a single-crystal superalloy seed crystal using a five-axis water-jet guided laser processing system provided by an embodiment of the present application uses a five-axis water-jet guided laser processing system to prepare a single-crystal superalloy seed crystal. The three-dimensional crystal orientation of a large single crystal and the orientation of the target seed crystal are calibrated by a vector calculation method, so that it is possible to avoid calibrating the three-dimensional crystal orientation of the large single crystal by an X-ray diffractometer. According to the calculated target seed crystal orientation, the required orientation of the seed crystal is obtained by directional cutting using the five-axis water-jet guided laser processing system, which can avoid designing and using complex special three-dimensional steering jigs, improve the cutting accuracy, and ensure the cutting quality of the seed crystal.

[0013] The above description is only an overview of the technical solutions of the present application. In order to be able to understand the technical means of the present application more clearly, it can be implemented according to the content of the specification. And in order to make the above and other purposes, features, and advantages of the present application more obvious and understandable, the following specifically illustrates the specific embodiments of the present application. Description of the Drawings

[0014] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The schematic embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation of the present application. In the drawings:

[0015] Figure 1 Shows a schematic flow chart of a method for preparing a single-crystal superalloy seed crystal using a five-axis water-jet guided laser processing system provided by an embodiment of the present application;

[0016] Figure 2 Shows a schematic diagram of calculating the direction vector of a primary dendrite provided by an embodiment of the present application;

[0017] Figure 3 Shows a schematic diagram of calculating the direction vector of a secondary dendrite provided by an embodiment of the present application;

[0018] Figure 4 Is a schematic diagram of calculating the direction vector of the orientation of a target seed crystal provided by an embodiment of the present application. Detailed implementation mode

[0019] In the following, the present application will be described in detail with reference to the accompanying drawings and in combination with embodiments. It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.

[0020] In this embodiment, a method for preparing a single crystal superalloy seed crystal by using a five-axis water-guided laser processing system is provided. As Figure 1 shown, the method includes the following steps:

[0021] S1. Prepare a single crystal superalloy test plate by using a directional solidification process in combination with a spiral crystal selection method. Adjacent two side surfaces of the single crystal superalloy test plate have a perpendicular relationship, and the growth direction of the single crystal superalloy test plate is determined based on the crystallographic orientation of

[001] .

[0022] An embodiment of the present application provides a detailed method for preparing a single crystal superalloy seed crystal. First, a single crystal test plate is prepared by directional solidification and the spiral crystal selection method. Among them, the directional solidification process is a process for preparing materials with a specific crystal orientation by controlling the solidification direction of the melt, and the spiral crystal selection method is a process for improving the quality of single crystals. By introducing a spiral structure, the crystal orientation is screened and optimized. The embodiment of the present application uses a directional solidification process in combination with a spiral crystal selection method to prepare a single crystal superalloy test plate, ensuring that adjacent two side surfaces of the prepared test plate have a perpendicular relationship, and its growth direction is determined based on the crystallographic orientation of

[001] . Specifically, the growth direction of the single crystal superalloy test plate usually has a crystallographic orientation approximately

[001] . For example, taking the crystallographic orientation of

[001] as the standard direction, the angle between the growth direction and the standard direction is less than a preset value. Among them, in crystallography, the orientation of a crystal is usually represented by three indices [uvw], where u, v, and w are the crystal direction indices.

[100] represents the X-axis direction,

[010] represents the Y-axis direction,

[001] represents the Z-axis direction, and the

[001] orientation means along the Z-axis direction of the crystal.

[0023] S2. After macroscopically etching the single-crystal superalloy test plate, measure the angles α and β between the dendrites on the two side surfaces of the single-crystal superalloy test plate and the single-crystal growth direction; then, chemically etch the cross-section of the single-crystal superalloy test plate and measure the angles A and B between the secondary dendrites on the cross-section and the horizontal axis.

[0024] In the embodiment of the present application, after the preparation of the single-crystal superalloy test plate is completed through step S1, macroscopic and chemical etching and angle measurement are performed on the single-crystal superalloy test plate. Specifically, macroscopic etching is used to reveal the dendrite structure on the surface of the test plate. In an alternative embodiment, the macroscopic etching solution in step S2 is a hydrogen peroxide-hydrochloric acid solution with a volume ratio of 1:1. The single-crystal superalloy test plate obtained in step S1 is macroscopically etched with a hydrogen peroxide-hydrochloric acid solution with a volume ratio of 1:1 to make the dendrites on the surface of the test plate clearly visible. Then, measure the angles (α and β) between the dendrites on the two side surfaces and the single-crystal growth direction. Next, chemically etch the cross-section of the single-crystal superalloy test plate and measure the angles A and B between the secondary dendrites on the cross-section and the horizontal axis. These angles are key parameters for determining the crystal orientation. Among them, the single-crystal test plate is prepared by the directional solidification process combined with the spiral crystal selection method, and its crystal structure has a clear directionality macroscopically. On the cross-section of the test plate, due to the growth characteristics of the crystal, a secondary dendrite structure with a "cross" morphology will be formed. Specifically, when chemically etching the cross-section of the test plate, the etching solution will erode the dendrite tissue on the cross-section to different degrees. By measuring the angles between the "horizontal" and "vertical" directions of the secondary dendrites with a "cross" morphology and the horizontal axis, the growth direction and orientation of the crystal can be further understood. These two angles can reflect the main growth direction of the secondary dendrites on the cross-section of the test plate.

[0025] In an alternative embodiment, before chemical etching, it further includes: successively mechanically grinding and polishing the cross-section of the single-crystal superalloy test plate, and further chemically etching the cross-section of the single-crystal superalloy test plate with an aqueous hydrochloric acid-copper sulfate solution with a ratio of 4 g CuSO4 + 10 mL HCl + 20 mL H2O.

[0026] S3. Calculate the direction vectors of the primary dendrites and secondary dendrites of the single-crystal superalloy test plate according to the α angle, β angle, A angle, and B angle.

[0027] In the embodiment of the present application, using the angles measured in step S2, calculate the direction vectors of the primary dendrites and secondary dendrites of the single-crystal test plate. These direction vectors define the growth direction of the crystal in three-dimensional space.

[0028] In an alternative embodiment, before step S3, it further includes: establishing a spatial rectangular coordinate system based on the appearance direction of the single-crystal superalloy test plate, so as to calculate the direction vectors of the primary dendrites and secondary dendrites of the single-crystal superalloy test plate based on the established spatial rectangular coordinate system. Among them, before calculating the direction vectors of the primary dendrites and secondary dendrites of the single-crystal superalloy test plate in step S3, it is necessary to establish a spatial rectangular coordinate system based on the appearance direction of the single-crystal superalloy test plate, ensuring that all subsequent measurements and calculations are carried out in a unified and accurate three-dimensional space reference system.

[0029] In an alternative embodiment, calculating the direction vector of the primary dendrite in step S3 includes: based on the spatial rectangular coordinate system established according to the appearance direction of the single-crystal superalloy test plate, denoting the direction vector of the primary dendrite as The component length on the Z-axis is |OL|, and using The angle α between the projection OM of the XOZ plane on the Z-axis, it can be obtained that The component length on the X-axis is |ML| = |OL|tanα, and using The angle β between the projection ON of the YOZ plane on the Z-axis, it can be obtained that The component length on the Y-axis is |NL| = |OL|tanβ; according to The component lengths on the X-axis, Y-axis, and Z-axis, determine the direction vector of the primary dendrite Expressed as:

[0030] Equation (1):

[0031] Among them, based on the appearance direction of the single-crystal superalloy test plate, a spatial rectangular coordinate system is established, and the direction vector of the primary dendrite is denoted as As Figure 2 shown, The component length on the Z-axis is |OL|, and using The angle α between the projection OM of the XOZ plane on the Z-axis, it can be obtained that The component length on the X-axis is |ML| = |OL|tanα, and using The angle β between the projection ON of the YOZ plane on the Z-axis, it can be obtained that The component length on the Y-axis is |NL| = |OL|tanβ. According to The component lengths on the X-axis, Y-axis, and Z-axis, the direction vector of the primary dendrite Can be expressed as: Equation (1):

[0032] In an alternative embodiment, calculating the direction vector of the secondary dendrite in step S3 includes: based on the spatial rectangular coordinate system established according to the appearance direction of the single-crystal superalloy test plate, denoting the direction vectors of the secondary dendrites as and When solving the direction vector of the secondary dendrite, for the secondary dendrite with the direction vector being , first project onto the XOY plane. The length of the component in the XOY plane is |OP|. Using the angle A between OP and the Y-axis, we can obtain The length of the component on the X-axis is |PR| = |OP|sinA, and the length of the component on the Y-axis is |OR| = |OP|cosA; Let the length of the component on the Z-axis be m. Then the direction vector of the secondary dendrite is expressed as Since the primary dendrite and the secondary dendrite are perpendicular to each other, so the dot product of and is equal to 0, that is:

[0033] Equation (2):

[0034] According to Equation (2), we can find that m = |OP|(sinAtanα + cosAtanβ). Furthermore, the direction vector of the secondary dendrite is expressed as:

[0035] Equation (3):

[0036] For the secondary dendrite with the direction vector being , first project onto the XOY plane. The length of the component in the XOY plane is |OQ|. Using the angle B between OQ and the Y-axis, we can obtain The length of the component on the X-axis is |QS| = |OQ|sinB, and the length of the component on the Y-axis is |OS| = |OQ|cosB; Let the length of the component on the Z-axis be n. Then the direction vector of the secondary dendrite is expressed as Since the primary dendrite and the secondary dendrite are perpendicular to each other, so the dot product of and is equal to 0, that is:

[0037] Equation (4):

[0038] According to Equation (4), we can find that n = |OQ|(-sinBtanα + cosBtanβ). Furthermore, the direction vector of the secondary dendrite is expressed as:

[0039] Equation (5):

[0040] Among them, let the direction vectors of the secondary dendrites be respectively and As Figure 3 shown, the component length in the XOY plane is |OP|. Using the angle A between OP and the Y-axis, we can obtain the component length on the X-axis is |PR| = |OP|sinA, the component length on the Y-axis is |OR| = |OP|cosA. Let the component length on the Z-axis be m. Then the direction vector of the secondary dendrite can be expressed as Since the primary dendrite and the secondary dendrite are perpendicular to each other, so and the dot product of them is equal to 0, that is:

[0041] Equation (2):

[0042] According to Equation (2), we find m = |OP|(sinAtanα + cosAtanβ). Furthermore, the direction vector of the secondary dendrite can be expressed as:

[0043] Equation (2):

[0044] The component length in the XOY plane is |OQ|. Using the angle B between OQ and the Y-axis, we can obtain the component length on the X-axis is |QS| = |OQ|sinB, the component length on the Y-axis is |OS| = |OQ|cosB. Let the component length on the Z-axis be n. Then the direction vector of the secondary dendrite can be expressed as Since the primary dendrite and the secondary dendrite are perpendicular to each other, so and the dot product of them is equal to 0, that is:

[0045] Equation (4):

[0046] According to Equation (4), we find n = |OQ|(-sinBtanα + cosBtanβ). Furthermore, the direction vector of the secondary dendrite can be expressed as:

[0047] Equation (5):

[0048] The direction vectors of the primary dendrites and secondary dendrites of the single crystal superalloy test plate can be obtained through equations (1), (3), and (5).

[0049] S4. Calculate the direction vector of the target seed crystal orientation based on the direction vectors of the primary dendrites and secondary dendrites of the single crystal superalloy test plate.

[0050] In the embodiment of the present application, based on the direction vectors obtained in step S3, the direction vector of the target seed crystal orientation is further calculated to determine the final seed crystal cutting direction.

[0051] In an alternative embodiment, step S4 includes: normalizing the direction vectors of the dendrites calculated by equations (1), (3), and (5), where the normalized result of the direction vector of the primary dendrite is The normalized results of the direction vectors of the secondary dendrites are respectively and Calculate the direction vector of the target seed crystal orientation using the normalized dendrite direction vectors. Among them, the direction vector of the

[110] seed crystal orientation is expressed as: Equation (6): The direction vector of the

[111] seed crystal orientation can be expressed as: Equation (7):

[0052] Among them, the direction vectors of the dendrites calculated by equations (1), (3), and (5) are normalized, where the normalized result of the direction vector of the primary dendrite is The normalized results of the direction vectors of the secondary dendrites are respectively and As Figure 4 shown, the direction vector of the target seed crystal orientation can be calculated using the normalized dendrite direction vectors. For example, the direction vector of the

[110] seed crystal orientation can be expressed as: The direction vector of the

[111] seed crystal orientation can be expressed as: Through the above formulas, the direction vector of the required seed crystal orientation can be obtained. Among them, the

[110] direction is along the diagonal direction of the X-axis and Y-axis of the crystal. Specifically, it is in the plane formed by the X-axis and Y-axis and makes a 45° angle with both the X-axis and Y-axis. The

[111] direction is along the body diagonal direction of the crystal. In the cubic crystal system, it starts from the origin and points to the diagonal vertex of the cube (i.e., the direction of taking one unit length along the X-axis, Y-axis, and Z-axis).

[0053] S5. Clamp the single crystal superalloy test plate on the workbench of the five-axis water-guided laser processing system, and perform directional cutting using the five-axis water-guided laser processing system according to the direction vector of the target seed crystal orientation to obtain the target seed crystal.

[0054] In the embodiments of the present application, finally, five-axis water-guided laser is used for directional cutting. Specifically, the single-crystal test plate is clamped on the workbench of the five-axis water-guided laser processing system. By using the high precision and multi-axis control ability of the system, directional cutting is carried out according to the direction vector of the target seed crystal orientation, so as to obtain the target seed crystal. In an alternative embodiment, along the direction vector of the target seed crystal orientation, the five-axis water-guided laser processing system is used for directional cutting. After cutting, an air gun is used to remove the stains and water stains on the surface of the seed crystal.

[0055] By applying the technical solution of this embodiment, through directional solidification and the spiral crystal selection method, a single-crystal test plate with high quality can be prepared, providing a good basis for subsequent seed crystal cutting. By measuring the included angle and calculating the direction vector, the orientations of the single-crystal test plate and the target seed crystal can be accurately determined, so as to meet the requirements of the seed crystal orientation for specific applications. By using the high precision and multi-axis control ability of the five-axis water-guided laser processing system, the cutting of seed crystals with complex shapes and precise dimensions can be realized, while improving the processing efficiency and precision.

[0056] Furthermore, the embodiments of the present application provide a single-crystal superalloy seed crystal, which is prepared by the method of using the five-axis water-guided laser processing system to prepare the single-crystal superalloy seed crystal as described above.

[0057] Compared with the prior art, the beneficial effects produced by the present application are as follows:

[0058] (1) In the present invention, the crystal orientations of the large single crystal and the target seed crystal are calibrated and calculated by the method of vector calculation, avoiding the orientation calibration of the large single crystal using an X-ray diffractometer. This method for calculating the crystal orientation is simple, accurate, and an easy-to-operate method.

[0059] (2) In the present invention, the seed crystal is directionally cut by the five-axis water-guided laser processing system, avoiding the design and use of complex special three-dimensional steering jigs. The cut seed crystal has high precision and good quality.

[0060] The technical features of the above embodiments can be combined arbitrarily. For the sake of concise description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in this specification.

[0061] The above-described embodiments only represent several implementation manners of the present application. The description is relatively specific and detailed, but it should not be construed as a limitation on the patent scope of the present application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several deformations and improvements can be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the appended claims.

Claims

1. A method for preparing single crystal superalloy seeds by using a five-axis water-guided laser processing system, characterized in that, It includes the following steps: S1. A single-crystal superalloy test plate is prepared by using a directional solidification process combined with a spiral grain selector method. Two adjacent side surfaces of the single-crystal superalloy test plate have a perpendicular relationship, and the growth direction of the single-crystal superalloy test plate is determined based on the crystallographic orientation of [001]. S2. After macroscopically etching the single-crystal superalloy test plate, measure the angles α and β between the dendrites on the two side surfaces of the single-crystal superalloy test plate and the single-crystal growth direction. Then, chemically etch the cross-section of the single-crystal superalloy test plate and measure the angles A and B between the secondary dendrites on the cross-section and the horizontal axis. S3. Calculate the direction vectors of the primary dendrites and secondary dendrites of the single-crystal superalloy test plate according to the α angle, β angle, A angle, and B angle. S4. Calculate the direction vector of the target seed crystal orientation according to the direction vectors of the primary dendrites and secondary dendrites of the single-crystal superalloy test plate. S5. Clamp the single-crystal superalloy test plate on the workbench of a five-axis water-guided laser processing system, and perform directional cutting using the five-axis water-guided laser processing system according to the direction vector of the target seed crystal orientation to obtain the target seed crystal.

2. A method for preparing single crystal superalloy seeds using a five-axis water-jet guided laser processing system according to claim 1, characterized in that, In step S2, the macroscopic etching solution is a hydrogen peroxide-hydrochloric acid solution, and its volume ratio is 1:

1.

3. A method for preparing single crystal superalloy seeds using a five-axis water-jet guided laser processing system according to claim 1, characterized in that Before chemically etching in step S2, it also includes: successively mechanically grinding and polishing the cross-section of the single-crystal superalloy test plate; the chemical etching solution is an aqueous solution of hydrochloric acid and copper sulfate, and its ratio is 4 g CuSO4 + 10 mL HCl + 20 mL H2O.

4. A method for preparing a single crystal superalloy seed crystal by using a five-axis water-jet guided laser processing system according to claim 1, characterized in that, Before calculating the direction vectors of the primary dendrites and secondary dendrites of the single-crystal superalloy test plate in step S3, it also includes: establishing a spatial rectangular coordinate system based on the appearance direction of the single-crystal superalloy test plate to calculate the direction vectors of the primary dendrites and secondary dendrites of the single-crystal superalloy test plate based on the established spatial rectangular coordinate system.

5. A method for preparing single crystal superalloy seeds using a five-axis water-jet guided laser processing system according to claim 4, characterized in that, In step S3, calculating the direction vector of the primary dendrite includes: A spatial rectangular coordinate system established based on the appearance direction of a single-crystal superalloy test plate, and the direction vector of the primary dendrite is denoted as The component length on the Z-axis is |OL|. Using The angle α between the projection OM of the XOZ plane on the Z-axis, we can obtain The component length on the X-axis is |ML| = |OL|tanα. Using The angle β between the projection ON of the YOZ plane on the Z-axis, we can obtain The component length on the Y-axis is |NL| = |OL|tanβ; According to The component lengths on the X-axis, Y-axis, and Z-axis, determine the direction vector of the primary dendrite Expressed as: Formula (1):

6. A method for preparing single crystal superalloy seeds using a five-axis water-jet guided laser processing system according to claim 5, characterized in that, In step S3, calculating the direction vector of the secondary dendrite includes: A spatial rectangular coordinate system established based on the appearance direction of a single-crystal superalloy test plate. Denote the direction vectors of the secondary dendrites as and When solving for the direction vectors of the secondary dendrites, for the secondary dendrite with a direction vector of first project onto the XOY plane. The component length of in the XOY plane is |OP|. Using the angle A between OP and the Y-axis, we can obtain The component length of on the X-axis is |PR| = |OP|sinA, The component length of on the Y-axis is |OR| = |OP|cosA; Let The component length of on the Z-axis be m. Then the direction vector of the secondary dendrite is expressed as Since the primary dendrite and the secondary dendrite are perpendicular to each other, so and The dot product of Formula (2): According to formula (2), m = |OP|(sinAtanα + cosAtanβ) is obtained, and further, the direction vector of the secondary dendrite is expressed as: Equation (3): For the secondary dendrite with the direction vector of , first project onto the XOY plane. The component length in the XOY plane is |OQ|. Using the angle B between OQ and the Y-axis, we can obtain The component length on the X-axis is |QS| = |OQ|sinB. The component length on the Y-axis is |OS| = |OQ|cosB. Let The component length on the Z-axis be n. Then the direction vector of the secondary dendrite is expressed as Since the primary dendrite and the secondary dendrite are perpendicular to each other, so and The dot product of them is equal to 0, that is: Equation (4): According to Equation (4), n = |OQ|(-sinBtanα + cosBtanβ) is obtained, and then the direction vector of the secondary dendrite is expressed as: Equation (5):

7. A method for preparing a single crystal superalloy seed crystal using a five-axis water-jet guided laser processing system according to claim 6, characterized in that In step S4, calculating the direction vector of the target seed crystal orientation includes: Normalize the direction vectors of the dendrites calculated by equations (1), (3), and (5), where the normalization result of the direction vector of the primary dendrite is The normalization results of the direction vectors of the secondary dendrites are respectively and Calculate the direction vector of the target seed crystal orientation using the normalized dendrite direction vectors.

8. A method for preparing a single-crystal superalloy seed crystal by using a five-axis water-guided laser processing system according to claim 7, wherein Among them, [110] The direction vector of the seed crystal orientation is expressed as: Equation (6): [111] The direction vector of the seed crystal orientation is expressed as: Equation (7):

9. A method for preparing a single crystal superalloy seed crystal using a five-axis water-jet guided laser processing system according to any one of claims 1 to 8, characterized in that, In step S5, performing directional cutting using the five-axis water-guided laser processing system according to the direction vector of the target seed crystal orientation includes: performing directional cutting along the direction vector of the target seed crystal orientation using the five-axis water-guided laser processing system, and after cutting, use an air gun to remove the stains and water stains on the surface of the seed crystal.

10. A single crystal superalloy seed crystal, characterized in that, The single-crystal superalloy seed crystal is prepared by the method for preparing a single-crystal superalloy seed crystal by using a five-axis water-guided laser processing system according to any one of claims 1 to 9.

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