Air inlet device and vapor phase epitaxial growth equipment

Abstract

The invention provides a gas inlet device and vapor phase epitaxial growth equipment. The gas inlet device comprises a gas uniformizing plate, a buffer plate, an inner pipe, an outer pipe and a gas inlet pipe, wherein the gas uniformizing plate and the buffer plate are attached to each other; the inner pipe continuously penetrates through the gas uniformizing plate and the buffer plate; an outer side conveying channel for conveying a first growth gas source is formed between the outer pipe and the inner pipe, the inner pipe partially extends into the outer pipe, an annular gas uniformizing cavity is formed in the gas uniformizing plate, a sieve plate with through holes is arranged in the buffer plate, and at least one layer of annular buffer cavity is formed by the sieve plate and the gas uniformizing plate; the gas inlet pipe is communicated with the annular gas uniformizing cavity, the gas inlet pipe inputs a first growth gas source into the annular gas uniformizing cavity, and the first growth gas source is injected into the buffer cavity after being distributed by at least one gas uniformizing hole formed by the annular gas uniformizing cavity and communicated with the buffer cavity, so that the first growth gas source is injected from the sieve plate to the outer side conveying channel to form laminar flow. The gas flow distribution uniformity of the first growth gas source in the epitaxial growth region is improved, and the method can be used for growing gallium nitride crystals.

Description

Technical Field

[0001] This application relates to the technical field of vapor phase epitaxial growth equipment, and particularly to an air inlet device for preparing group III nitride semiconductor materials and a vapor phase epitaxial growth equipment including the air inlet device. Background Art

[0002] A vapor phase epitaxial growth equipment (e.g., an HVPE device or an MOCVD device) is a semiconductor device for preparing gallium nitride crystals by vapor phase epitaxial growth technology. For example, an HVPE (Hydride Vapor Phase Epitaxy) device for preparing gallium nitride crystals includes a low-temperature region and a high-temperature region. The low-temperature region is a gallium source reaction region, where HCl reacts with metallic gallium to generate gallium chloride in the low-temperature region, and then the gallium chloride is transported by a carrier gas to the high-temperature region to react with NH3 to generate gallium nitride crystals. In an HVPE device for epitaxially growing gallium nitride based on the HVPE method, it is necessary to ensure that a uniformly distributed gas flow field is formed during the transportation of NH3 to the HVPE device, so as to ensure the reaction between gallium chloride and NH3, and to epitaxially grow qualified gallium nitride crystals from a seed crystal. Therefore, any fluctuations, turbulences, and convective vortices generated by the gas flow field formed by NH3 will have an adverse effect on the growth of gallium nitride crystals and need to be avoided. In view of this, it is necessary to improve the existing air inlet device and the vapor phase epitaxial growth equipment including the air inlet device to solve the above problems.

[0003] It should be noted that the above introduction of the background art is only for the convenience of clearly and completely describing the technical solutions of this application and facilitating the understanding of those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art just because these solutions are described in the background art part of this application. Summary of the Invention

[0004] The purpose of this application is to disclose an air inlet device and a vapor phase epitaxial growth equipment to solve the above-mentioned technical problems, and particularly to ensure the uniform transportation of the first growth gas source to the epitaxial growth region, improve the gas distribution effect of the first growth gas source, and the qualification rate of gallium nitride crystal growth.

[0005] To achieve one of the above purposes, this application provides an air inlet device, including:

[0006] A gas distribution plate and a buffer plate that are mutually attached, an inner tube that continuously penetrates the gas distribution plate and the buffer plate, an outer tube that is coaxially arranged with the inner tube and surrounds the outside of the inner tube, and an air inlet pipe;

[0007] A lateral delivery channel for delivering the first growth gas source is formed between the outer tube and the inner tube. The inner tube partially extends into the outer tube. An annular gas distribution cavity is provided in the gas distribution plate, and a sieve plate with through holes is provided in the buffer plate, so as to jointly construct at least one layer of annular buffer cavities by the sieve plate and the gas distribution plate. The intake pipe communicates with the annular gas distribution cavity, and the first growth gas source is input into the annular gas distribution cavity through the intake pipe. The first growth gas source is distributed by at least one gas distribution hole formed by the annular gas distribution cavity and communicating with the buffer cavity, and then injected into the buffer cavity, so as to form a laminar flow by the sieve plate and spray it into the lateral delivery channel.

[0008] As a further improvement of the present application, the inner tube longitudinally extends through the gas distribution plate and the buffer plate. One end of the outer tube away from the buffer plate protrudes to form a neck tube. The inner tube extends to the neck tube and fits with the neck tube. The free end of the neck tube away from the gas distribution plate forms a mounting end.

[0009] As a further improvement of the present application, a first sieve plate with a first through hole and a second sieve plate with a second through hole are provided in the buffer plate, so as to jointly construct a first buffer cavity and a second buffer cavity communicating with each other by the first sieve plate, the second sieve plate and the gas distribution plate. The annular gas distribution cavity forms at least one gas distribution hole communicating with the first buffer cavity, and the gas distribution hole and the first through hole are arranged in a staggered manner along the longitudinal extension direction of the outer tube.

[0010] As a further improvement of the present application, the height of the first buffer cavity is less than the height of the second buffer cavity.

[0011] As a further improvement of the present application, some of the first through holes and the second through holes are arranged in a coincident manner along the longitudinal extension direction of the outer tube, or all of the first through holes and all of the second through holes are arranged in a staggered manner along the longitudinal extension direction of the outer tube.

[0012] As a further improvement of the present application, the aperture of the first through hole is less than the aperture of the second through hole, and the number of the first through holes is greater than the number of the second through holes.

[0013] As a further improvement of the present application, an annular cooling cavity is provided inside the buffer plate, and a cooling medium inlet and a cooling medium outlet communicating with the annular cooling cavity are provided on the side of the cooling plate.

[0014] As a further improvement of the present application, at least one sealing ring is arranged at the joint surface formed by the gas distribution plate and the buffer plate.

[0015] As a further improvement of the present application, the outer tube extends longitudinally beyond the inner tube, so that an open epitaxial growth region is formed by the free tube section of the outer tube away from the buffer plate. The epitaxial growth region communicates with the outer delivery channel, and the inner tube forms an inner delivery channel for delivering the second growth gas source to the epitaxial growth region.

[0016] Based on the same inventive concept, the present application also provides a vapor phase epitaxial growth apparatus, comprising:

[0017] The gas inlet device according to any one of the foregoing inventions, and the vapor phase epitaxial growth apparatus is an HVPE apparatus or an MOCVD apparatus.

[0018] Compared with the prior art, the beneficial effects of the present application are:

[0019] In the present application, the first growth gas source input into the annular gas equalizing cavity by the inlet pipe flows annularly in the annular gas equalizing cavity of the gas equalizing plate, and then shoots into at least one layer of annular buffer cavities through the gas equalizing holes, and is buffered in the annular buffer cavities. The first growth gas source is buffered and evenly distributed by the sieve plate with through holes and the annular buffer cavity, and finally forms a laminar flow when spraying into the outer delivery channel, thereby improving the gas equalizing effect on the first growth gas source, enabling the first growth gas source to be evenly delivered in the epitaxial growth region, improving the uniformity of the gas flow distribution of the first growth gas source in the epitaxial growth region, and finally improving the qualification rate of semiconductor devices such as gallium nitride crystals prepared by vapor phase epitaxy. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 is a perspective view of the gas inlet device of the present application from one perspective;

[0021] Figure 2 is a perspective view of the gas inlet device of the present application from another perspective;

[0022] Figure 3 is a top view of the gas inlet device of the present application;

[0023] Figure 4 is along Figure 3 the overall cross-sectional view in the direction of A-A in

[0024] Figure 5 is along Figure 3 the partial cross-sectional view in the direction of B-B in

[0025] Figure 6 is Figure 4 the partial enlarged schematic view at the circle P in

[0026] Figure 7 is along Figure 6 the cross-sectional view in the direction of D-D in

[0027] Figure 8 is a cross-sectional view along the Figure 6 E-E direction in

[0028] Figure 9 is a cross-sectional view along the Figure 6 F-F direction in

[0029] Figure 10 is a cross-sectional view along the Figure 6 G-G direction in

[0030] Figure 11 is a simulation diagram of the gas flow field for the outer tube to transport the first growth gas source to the epitaxial growth region;

[0031] Figure 12 is a cross-sectional view along the Figure 6 C-C direction in

[0032] Figure 13 is a cross-sectional view along the Figure 6 H-H direction in

[0033] Figure 14 is Figure 1 a perspective view of the air distribution plate omitted in the intake device in

[0034] Figure 15 a cross-sectional view of the inner surface of the outer cylinder with an inner sleeve added. Specific Embodiments

[0035] The present application will be described in detail below with reference to the embodiments shown in the drawings. However, it should be noted that these embodiments are not limitations to the present application. Any equivalent transformation or substitution in terms of function, method, or structure made by those of ordinary skill in the art based on these embodiments shall fall within the protection scope of the present application.

[0036] Refer Figures 1 to 6 to a specific embodiment of the intake device 100 provided by the present application shown. The intake device 100 is applied to a vapor phase epitaxial growth device to prepare group III nitride semiconductor materials, such as GaN crystals or AlN crystals, etc.

[0037] The intake device 100 includes: an air-distributing plate 10, an outer tube 20, an inner tube 30, a buffer plate 40, and an intake pipe 60. The air-distributing plate 10 and the buffer plate 40 are mutually attached. The inner tube 30 continuously penetrates through the air-distributing plate 10 and the buffer plate 40. The outer tube 20 is coaxially arranged with the inner tube 30 and surrounds the inner tube 30. The outer tube 20 extends along the longitudinal extension direction beyond the inner tube 30, so that an epitaxial growth region 2b with an opening 201 is enclosed by the free pipe section 210 of the outer tube 20 away from the buffer plate 40. The epitaxial growth region 2b communicates with the outer conveying channel 2a, and the inner tube 30 forms an inner conveying channel 3 for delivering the second growth gas source to the epitaxial growth region 2b.

[0038] Furthermore, the air-distributing plate 10 and the buffer plate 40 can be made of materials with high temperature resistance and corrosion resistance (such as stainless steel).

[0039] As shown Figures 6 to 10 in the figure, a number of bolts continuously penetrate through the air-distributing plate 10 and the buffer plate 40 to lock the air-distributing plate 10 and the buffer plate 40. The air-distributing plate 10 and the buffer plate 40 can be configured as disc-shaped components. A number of stepped holes 104 are provided at the edge of the air-distributing plate 10, and a number of blind holes 144 with internal threads or through holes with internal threads (not shown) adapted to the stepped holes 104 are provided at the edge of the buffer plate 40. The bolts continuously pass through the stepped holes 104 and are screwed into the blind holes 144 to reliably fix the air-distributing plate 10 and the buffer plate 40 and keep them in a state of being mutually closely attached.

[0040] An outer conveying channel 2a for delivering the first growth gas source is formed between the outer tube 20 and the inner tube 30. The inner tube 30 partially extends into the outer tube 20. An annular air-distributing cavity 101 is provided in the air-distributing plate 10, and a sieve plate 1 with through holes is provided in the buffer plate 40, so as to jointly construct at least one layer of annular buffer cavities 14 by the sieve plate 1 and the air-distributing plate 10. The intake pipe 60 communicates with the annular air-distributing cavity 101. The intake pipe 60 inputs the first growth gas source into the annular air-distributing cavity 101. The first growth gas source is distributed by at least one air-distributing hole 102 formed in the annular air-distributing cavity 101 and communicating with the buffer cavities 14 and then injected into the buffer cavities 14, so as to form a laminar flow as shown by the arrow 4 in Figure 5 the figure, and the laminar flow Figure 11As shown in the figure. Laminar flow refers to the flow state in which there is no mutual mixing between two mutually shearing layers during the flow of a fluid (e.g., a gas), ensuring that the distribution on the cross-section perpendicular to the flow direction tends to be consistent and uniform. Therefore, forming laminar flow is beneficial to maintaining the uniformity of the gas flow distribution in the outer delivery channel 2a and the epitaxial growth region 2b, so that gallium chloride is delivered to the epitaxial growth region 2b where the high-temperature region is formed, and reacts with NH3 (i.e., a subordinate concept of the first growth gas source) to generate gallium nitride crystals, achieving good uniformity in the crystal orientation growth of gallium nitride crystals, which is beneficial to eliminating the lattice defects and dislocation density of gallium nitride crystals, and ultimately improving the qualification rate of semiconductor devices such as gallium nitride crystals prepared by vapor phase epitaxial growth.

[0041] Each specific embodiment of the intake device 100 disclosed in the present application aims to form laminar flow during the delivery of the first growth gas source (e.g., ammonia gas, etc.) from the outer delivery channel 2a to the epitaxial growth region 2b, so that the first growth gas source forms laminar flow as a whole in the delivery region 2 formed between the inner tube 30 and the outer tube 20, so that the distribution of the first growth gas source on any gas delivery cross-section perpendicular to its flow direction in the delivery region 2 tends to be consistent and uniform, to improve the uniformity of the gas flow distribution of the first growth gas source in the epitaxial growth region, and ultimately improve the qualification rate of semiconductor devices such as gallium nitride crystals prepared by vapor phase epitaxial growth.

[0042] As an alternative embodiment, the intake device 100 can be vertically arranged or horizontally arranged, and the intake device 100 can be applied to an HVPE device or an MOCVD device, so as to deliver the first growth gas source and the second growth gas source to the epitaxial growth region 2b through the outer tube 20 and the inner tube 30 respectively. Optionally, the first growth gas source can be ammonia gas, and the second growth gas source can be hydrogen chloride gas (e.g., in the scenario where the intake device 100 is applied to an HVPE device) or trimethylgallium / trimethylaluminum (e.g., in the scenario where the intake device 100 is applied to an MOCVD device), and the present application does not exclude other types of gases that can be used based on the principle of vapor phase epitaxial growth. As Figure 4 shown, when the intake device 100 is applied to the scenario of an HVPE device, a gallium boat 34 or an aluminum boat 35 is fixed in the inner tube 30. The gallium boat 34 or the aluminum boat 35 can adopt any implementation manner of a gallium boat or an aluminum boat in the prior art. Since the technical solutions adopted by the gallium boat or the aluminum boat are not the inventive points of the present application, they are not specifically described in each embodiment of the present application. When the intake device 100 is applied to the scenario of an MOCVD device, the aforementioned gallium boat 34 or aluminum boat 35 is not provided in the inner tube 30.

[0043] It should be noted that the intake device 100 disclosed in this application is applied to different scenarios of HVPE devices or MOCVD devices, and the III-nitride semiconductor materials prepared are different. There are differences in the selection of the first growth gas source and the second growth gas source, which are specifically described as follows.

[0044] Exemplarily, in an embodiment of vapor phase epitaxial growth of GaN crystals using an HVPE device, the second growth gas source is carried by a carrier gas to react with metallic gallium in a fixed gallium boat 34 in the inner tube 30 to generate gallium chloride. The gallium chloride is further carried by the carrier gas to the epitaxial growth region 2b, and the gallium chloride reacts with the first growth gas source in the epitaxial growth region 2b to generate GaN crystals. The temperature of the local area where the inner tube 30 of the gallium boat 34 is located is set lower than the temperature of the epitaxial growth region 2b. In this embodiment, the first growth gas source is ammonia gas, the second growth gas source is hydrogen chloride gas, and the carrier gas can be selected from nitrogen gas, hydrogen gas, or a mixed gas of nitrogen gas and hydrogen gas in any proportion.

[0045] Exemplarily, in an embodiment of vapor phase epitaxial growth of AlN crystals using an HVPE device, the second growth gas source is carried by a carrier gas to react with metallic aluminum in a fixed aluminum boat 35 in the inner tube 30 to generate aluminum chloride. The aluminum chloride is further carried by the carrier gas to the epitaxial growth region 2b, and the aluminum chloride reacts with the first growth gas source in the epitaxial growth region 2b to generate AlN crystals. The temperature of the local area where the inner tube 30 of the aluminum boat 35 is located is set lower than the temperature of the epitaxial growth region 2b. In this embodiment, the first growth gas source is ammonia gas, the second growth gas source is hydrogen chloride gas, and the carrier gas can be selected from nitrogen gas, hydrogen gas, or a mixed gas of nitrogen gas and hydrogen gas in any proportion.

[0046] Exemplarily, in an embodiment of vapor phase epitaxial growth of GaN crystals using an MOCVD device, the second growth gas source is carried by a carrier gas into the inner tube 30 and further carried by the carrier gas to the epitaxial growth region 2b. The second growth gas source reacts with the first growth gas source in the epitaxial growth region 2b to generate GaN crystals. In this embodiment, the first growth gas source is ammonia gas, the second growth gas source is trimethylgallium, and the carrier gas can be selected from nitrogen gas, hydrogen gas, or a mixed gas of nitrogen gas and hydrogen gas in any proportion.

[0047] Exemplarily, in an embodiment of vapor phase epitaxial growth of AlN crystals using an MOCVD device, the second growth gas source is carried by a carrier gas into the inner tube 30 and further carried by the carrier gas to the epitaxial growth region 2b. The second growth gas source reacts with the first growth gas source in the epitaxial growth region 2b to generate AlN crystals. In this embodiment, the first growth gas source is ammonia gas, the second growth gas source is trimethylaluminum, and the carrier gas can be selected from nitrogen gas, hydrogen gas, or a mixed gas of nitrogen gas and hydrogen gas in any proportion.

[0048] See Figure 1 、 Figures 5 to 7 andFigure 12 As shown, a through hole 62 is opened at the end of the intake pipe 60 close to the gas distribution plate 10, and a hollow cavity 61 is provided inside to transport the first growth gas source. The hollow cavity 61 communicates with the annular gas distribution cavity 101. The first growth gas source is continuously transported into the annular gas distribution cavity 101 through the through hole 62 along the direction of arrow 6 in Figure 5 and the first growth gas source flows in the annular gas distribution cavity 101 along the direction of arrow 63 in Figure 12 and quickly fills the annular gas distribution cavity 101, and after fully flowing inside the annular gas distribution cavity 101, it is transported to the first buffer cavity 141 through three gas distribution holes 102. The first growth gas source is distributed by at least one gas distribution hole 102 formed by the annular gas distribution cavity 101 and then injected into the buffer cavity 14, so that the annular gas distribution cavity 101 has a gas flow distribution effect on the first growth gas source. The first growth gas source transported into the annular gas distribution cavity 101 undergoes sufficient annular flow in the relatively small annular space defined by the annular gas distribution cavity 101, and thus is evenly transported to the first buffer cavity 141 through three annularly and evenly arranged gas distribution holes 102. Those skilled in the art can also increase the number of gas distribution holes 102 according to actual needs, and preferably keep the gas distribution holes 102 evenly distributed at equal intervals in a ring shape. A bottom plate 103 is formed on one side of the gas distribution plate 10 close to the buffer plate 40, and one or more gas distribution holes 102 are opened on the bottom plate 103.

[0049] The first growth gas source and the carrier gas are first transported along the direction of arrow 4 in Figure 5 to the outer transport channel 2a and finally transported to the epitaxial growth region 2b. The second growth gas source and the carrier gas are along the direction of arrow 33 in Figure 5 and pass through the gallium boat 34 or the aluminum boat 35, so as to react with metallic gallium or metallic aluminum in the gallium boat 34 or the aluminum boat 35 to generate gallium chloride or aluminum chloride. Gallium chloride or aluminum chloride is further transported by the carrier gas to the epitaxial growth region 2b and reacts with the first growth gas source on the liner of the epitaxial growth region 2b to generate single crystals (for example, GaN crystals). Exemplarily, in the low-temperature region (i.e., the inner transport channel 3) of the inner tube 3 close to the buffer plate 40, the second growth gas source (for example, hydrogen chloride gas) reacts with metallic gallium to generate gallium chloride, and then the gallium chloride is carried by the carrier gas to the high-temperature region (i.e., a specific concept of the epitaxial growth region 2b) to react with the first growth gas source to generate gallium nitride crystals. An open end 302 is formed at the end of the inner tube 30 far from the buffer plate 40, and a second growth gas source input port 301 for inputting the second growth gas source is formed at the other end far from the open end 302. The inner tube 30 extends in the transport region 2 with a length shorter than that of the outer tube 20, so that a part of the tube section of the outer tube 20 encloses to form the epitaxial growth region 2b.

[0050] The inner tube 30 extends longitudinally through the air distribution plate 10 and the buffer plate 40. One end of the outer tube 20 away from the buffer plate 40 protrudes to form a neck tube 11. The inner tube 30 extends to the neck tube 11 and fits with the neck tube 11. The free end of the neck tube 11 away from the air distribution plate 10 forms a mounting end 19. Thus, the intake device 100 is hoisted as a whole through the mounting end 19 so that the intake device 100 is arranged vertically as a whole. Alternatively, the intake device 100 can also be horizontally fixed through the mounting end 19 and a fastener (for example, a bolt). As an alternative embodiment, the inner tube 30 may not extend to the neck tube 11.

[0051] As shown Figures 6 to 10 and Figures 12 to 14 in this specific embodiment, the number of buffer cavities 14 is two layers and includes a first buffer cavity 141 and a second buffer cavity 142. The sieve plate 1 may include a first sieve plate 17 and a second sieve plate 18 arranged in parallel. Therefore, the number of buffer cavities 14 depends on the number of sieve plates 1. Two layers of sieve plates 1 form two layers of buffer cavities 14, and three layers of sieve plates form three layers of buffer cavities (not shown). As an alternative embodiment, only one layer of sieve plate 1 may also be provided in the buffer plate 40 to form one layer of buffer cavity (not shown).

[0052] Specifically, as shown Figure 6 in the buffer plate 40, a first sieve plate 17 with a first through hole 171 and a second sieve plate 18 with a second through hole 180 are provided, so as to jointly construct a first buffer cavity 141 and a second buffer cavity 142 that communicate with each other by the first sieve plate 17 and the second sieve plate 18 and the air distribution plate 10. The annular air distribution cavity 101 forms at least one air distribution hole 102 that communicates with the first buffer cavity 141. The air distribution hole 102 and the first through hole 171 are arranged in a staggered manner along the longitudinal extension direction of the outer tube 20. At the same time, as shown Figure 5 in this specific embodiment, the through hole 62 and the three air distribution holes 102 may be arranged in a staggered manner, thereby preventing the first growth gas source from flowing directly from the through hole 62 to the air distribution holes 102 without passing through the necessary annular flow after being transported to the annular air distribution cavity 101, so as to ensure that the first growth gas source performs sufficient annular flow in the annular air distribution cavity 101 and is evenly injected into the first buffer cavity 141 by the three air distribution holes 102. The annular air distribution cavity 101 performs the first air distribution and buffering on the first growth gas source.

[0053] The height of the first buffer cavity 141 is less than the height of the second buffer cavity 142. This makes the volume of the first buffer cavity 141 less than the volume of the second buffer cavity 142, so that the first growth gas source injected into the first buffer cavity 141 by the air distribution holes 102 flows along Figure 6The horizontal flow velocity in the flat spreading toroidal surface where the first buffer cavity 141 is located is significantly greater than the vertical flow velocity along the height direction of the first buffer cavity 141, which is conducive to further dispersion of the first growth gas source in the first buffer cavity 141. Then, after the first growth gas source passing through the first through-hole 171 is transported to the second buffer cavity 142, since the volume of the second buffer cavity 142 is larger than that of the first buffer cavity 141, the flow velocities of the first growth gas source in the second buffer cavity 142 in the horizontal and vertical directions are further reduced, thereby further improving the gas equalization effect on the first growth gas source, which is conducive to the formation of a laminar flow as shown by arrow 4 in the outer transport channel 2a after the first growth gas source passes through the second through-hole 180.

[0054] It should be noted that the aforementioned term "height" refers to the thickness along the overall transport direction in which the first growth gas source is transported to the outer transport channel 2a, and it is not restrictively understood that the intake device 100 is arranged in a vertical posture.

[0055] Part of the first through-holes 171 and the second through-holes 180 are arranged to overlap along the longitudinal extension direction of the outer tube 20, or all the first through-holes 171 and all the second through-holes 180 are arranged to be offset along the longitudinal extension direction of the outer tube 20, and this can be regarded as a more preferred implementation manner. The first through-holes 171 are evenly distributed in a ring shape in the first sieve plate 17, and the second through-holes 180 are also evenly distributed in a ring shape in the second sieve plate 18.

[0056] Through the aforementioned technical means, it is reduced that the first growth gas source in the first buffer cavity 141 directly enters the second buffer cavity 142 without horizontal flow, and the dispersion effect of the first growth gas source in the first buffer cavity 141 is further improved.

[0057] The aperture of the first through-hole 171 is smaller than that of the second through-hole 180, and the number of the first through-holes 171 is greater than that of the second through-holes 180. The first growth gas source injected into the buffer cavity 14 needs to pass through the first through-hole 171 with a smaller aperture before passing through the second through-hole 180 with a larger aperture. Therefore, after the first growth gas source is evenly distributed and buffered for the second time by the relatively large number of first through-holes 171 with smaller apertures, it is injected into the second buffer cavity 142. Finally, after the first growth gas source is evenly distributed and buffered for the third time by the relatively small number of second through-holes 180 with larger apertures, it is injected into the outer transport channel 2a and finally reaches the epitaxial growth region 2b to form a laminar flow as Figure 5 indicated by arrow 4 in, and the simulated airflow field diagram formed by the laminar flow is shown in Figure 11 as Figure 4 shown in Figure 11As shown, the first growth gas source flows completely parallel to the longitudinal extension direction of the outer tube 20 in the outer delivery channel 2a and the epitaxial growth region 2b to form a laminar flow, thereby eliminating the gas flow disturbance (such as, turbulent flow or eddy current, etc.) of the first growth gas source in the outer delivery channel 2a and the epitaxial growth region 2b. Thereby, the first growth gas source is uniformly delivered in the epitaxial growth region 2b, improving the gas flow distribution uniformity of the first growth gas source in the epitaxial growth region 2b, and ultimately improving the qualification rate of semiconductor devices such as gallium nitride crystals (i.e., a subordinate concept of group III nitride semiconductor materials) or aluminum nitride crystals prepared by vapor phase epitaxial growth.

[0058] As another alternative embodiment, the number of buffer cavities 14 can also be one (for example, only including the first buffer cavity 141 or the second buffer cavity 142), or the number of buffer cavities 14 can also be three or more, and its technical concept is similar to the increase or decrease in the number of the first sieve plate 17 or the second sieve plate 18.

[0059] Combined with Figure 6 and Figure 13 As shown, the buffer plate 40 is internally provided with an annular cooling cavity 143, and the side of the cooling plate 40 has a cooling medium inlet 182 and a cooling medium outlet 183 communicating with the annular cooling cavity 143. The cooling medium inlet 182 and the cooling medium outlet 183 extend from the outer wall surface 181 of the buffer plate 40 inward to the annular cooling cavity 143. The cooling medium can be selected from circulating water or refrigerant. The cooling medium inlet 182 and the cooling medium outlet 183 are preferably arranged symmetrically in opposite directions so that the flow paths respectively formed by the cooling medium in the annular cooling cavity 143 are consistent along the Figure 13 flow direction of the arrow 184 in, so that the overall temperature inside the buffer plate 40 tends to be consistent, and it is beneficial to keep the buffer plate 40 at a relatively low temperature to the greatest extent.

[0060] Thus, through the foregoing technical solutions, the internal and external temperatures of the buffer plate 40 in the hot wall reaction based on the HVPE device can be maintained below 200 degrees Celsius. For the cold wall reaction of the MOCVD device, the internal and external temperatures of the buffer plate 40 will be further reduced. At the same time, by adjusting the flow rate of the cooling medium, the temperature of the first growth gas source flowing through the buffer plate 40 can also be adaptively adjusted to ensure that the gas temperature of the first growth gas source entering the delivery region 2 is maintained within the set temperature range, and the gas temperature of the first growth gas source can be flexibly adjusted within a certain range by the flow rate of the cooling medium to achieve flexible adjustment of the reaction rate and growth rate of vapor phase epitaxial growth.

[0061] Combined with Figure 6 , Figure 8 andFigure 14 As shown, at least one sealing ring is disposed at the joint surface 145 formed by the air distribution plate 10 and the buffer plate 40. A groove 151 for accommodating the sealing ring 15 and a groove 161 for accommodating the sealing ring 16 are recessed on the radially inner side of the buffer plate 40 to form a circle. Thus, the sealing rings 15 and 16 are disposed at the joint surface 145. The sealing ring 15 and / or the sealing ring 16 can be simultaneously embedded in the surface of the buffer plate 40 or the surface of the air distribution plate 10, or respectively embedded in the corresponding surfaces of the air distribution plate 10 and the buffer plate 40 facing each other, or partially embedded in the surface of the air distribution plate 10 and partially embedded in the surface of the buffer plate 40.

[0062] As a preferred embodiment, the sealing rings 15 and 16 are arranged transversely along the direction perpendicular to the longitudinal extension direction of the inner tube 30, and are respectively disposed around the radially inner side and the radially outer side of the buffer cavity 14 to ensure that no leakage occurs when the first growth gas source passes through the buffer cavity 14, so as to ensure that the air inlet device 100 has good airtightness as a whole. Thus, by the continuous flow of the cooling medium inside the buffer plate 40, the temperature of the sealing rings 15 and 16 can also be reduced, avoiding the technical problem of sealing failure caused by aging, softening and melting of the sealing rings 15 and 16 due to excessive temperature.

[0063] The buffer plate 40 and the outer tube 20 can be configured as a split structure or an integral structure. The outer tube 20 can be made of quartz or high-temperature resistant and corrosion-resistant stainless steel. When the air inlet device 100 is applied to the technical scenario of the HVPE device, since the working temperature of the high-temperature zone of the HVPE device usually remains above 1000 °C, the outer tube 20 and the inner tube 30 in the air inlet device 100 for delivering the first growth gas source are usually made of quartz. A base (not shown) is disposed at the bottom of the air inlet device 100 near the opening 201, so that the seed crystal disposed on the surface of the base reacts with gallium chloride and the first growth gas source to grow gallium nitride crystals directionally. Therefore, when the air inlet device 100 is applied to the technical scenario of the HVPE device (i.e., hot wall growth), both the outer tube 20 and the inner tube 30 are made of quartz; when the air inlet device 100 is applied to the technical scenario of the MOCVD device (i.e., cold wall growth), the inner tube 30 is made of quartz and the outer tube 20 can be made of high-temperature resistant and corrosion-resistant stainless steel to form a water-cooled outer wall.

[0064] Refer Figure 2 to Figure 15As shown, during the vapor-phase epitaxial growth of gallium nitride crystals, it is inevitable that gallium nitride crystal particles generated by the reaction are deposited on the inner surface 202 of the outer tube 20. Therefore, an inner sleeve 203 made of quartz can be additionally provided on the inner surface 202, so that the particles are deposited on the inner wall 213 of the quartz inner sleeve 203. The quartz inner sleeve 203 is regularly replaced and cleaned, reducing the deposition of gallium nitride crystal particles on the inner surface 202 of the outer tube 20, extending the service life of the outer tube 20, and thus reducing the maintenance and use costs of the intake device 100. At the same time, a sealing ring (not shown) can be provided at the joint surface (not marked with an attached drawing reference) formed by the side surface 46 of the buffer plate 40 facing the outer tube 20 and the end surface 22 of the outer tube 20 to improve and ensure the sealing performance at the joint of the outer tube 20 and the buffer plate 40. The outer tube 20 is held in place relative to the buffer plate 40 by a bracket or other structural member (not shown). In view of the technical means on which the assembly position relationship realized by the bracket or other structural member depends, any technical means in the prior art can be used to achieve it, and it is not the inventive point of this application. Therefore, it is omitted in this embodiment.

[0065] At the same time, this application also discloses a specific implementation manner of a vapor-phase epitaxial growth device. The vapor-phase epitaxial growth device includes: the intake device 100 disclosed in any one of the above embodiments, and the vapor-phase epitaxial growth device is an HVPE device or an MOCVD device. In this embodiment, for the specific implementation manner of the intake device 100, refer to the foregoing embodiments and will not be elaborated herein.

[0066] The series of detailed descriptions listed above are only specific descriptions of the feasible implementation manners of this application, and they are not intended to limit the protection scope of this application. Any equivalent implementation manners or changes made without departing from the technical spirit of this application should be included in the protection scope of this application.

[0067] For those skilled in the art, it is obvious that this application is not limited to the details of the above exemplary embodiments, and can be implemented in other specific forms without departing from the spirit or basic characteristics of this application. Therefore, from any point of view, the embodiments should be regarded as exemplary and non-limiting. The scope of this application is defined by the appended claims rather than the above description. Therefore, all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be included in this application. Any reference signs in the claims should not be regarded as limiting the claimed rights.

[0068] In addition, it should be understood that although this specification is described according to embodiments, not every embodiment only contains an independent technical solution. This narrative manner of the specification is only for clarity. Those skilled in the art should regard the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. An intake device, characterized in that, Comprising: A gas-distributing plate and a buffer plate that are mutually attached, an inner tube that continuously penetrates through the gas-distributing plate and the buffer plate, an outer tube that is coaxially arranged with the inner tube and surrounds the outside of the inner tube, and an intake pipe; An outer conveying channel for conveying a first growth gas source is formed between the outer tube and the inner tube. The inner tube partially extends into the outer tube. An annular gas-distributing cavity is arranged in the gas-distributing plate, and a sieve plate with through holes is arranged in the buffer plate, so as to jointly construct at least one layer of annular buffer cavities by the sieve plate and the gas-distributing plate; The intake pipe communicates with the annular gas-distributing cavity. The intake pipe inputs the first growth gas source into the annular gas-distributing cavity. The first growth gas source is distributed by at least one gas-distributing hole formed by the annular gas-distributing cavity and communicating with the buffer cavity and then injected into the buffer cavity, so as to form a laminar flow by the sieve plate and spray it into the outer conveying channel.

2. The intake device according to claim 1, characterized in that, The inner tube longitudinally extends through the gas-distributing plate and the buffer plate. One end of the outer tube away from the buffer plate protrudes to form a neck tube. The inner tube extends to the neck tube and is mutually attached to the neck tube. The free end of the neck tube away from the gas-distributing plate forms a mounting end.

3. The intake device according to claim 1, characterized in that, A first sieve plate with a first through hole and a second sieve plate with a second through hole are arranged in the buffer plate, so as to jointly construct a first buffer cavity and a second buffer cavity that are mutually communicated by the first sieve plate, the second sieve plate and the gas-distributing plate. The annular gas-distributing cavity forms at least one gas-distributing hole communicating with the first buffer cavity. The gas-distributing hole and the first through hole are arranged in a staggered manner along the longitudinal extension direction of the outer tube.

4. The intake device according to claim 3, characterized in that, The height of the first buffer cavity is less than the height of the second buffer cavity.

5. The intake device according to claim 3, characterized in that Part of the first through holes and the second through holes are arranged in a coincident manner along the longitudinal extension direction of the outer tube, or all the first through holes and all the second through holes are arranged in a staggered manner along the longitudinal extension direction of the outer tube.

6. The intake device according to claim 5, characterized in that, The aperture of the first through hole is less than the aperture of the second through hole, and the number of the first through holes is greater than the number of the second through holes.

7. The intake device according to any one of claims 1 to 6, characterized in that An annular cooling cavity is arranged inside the buffer plate. The side of the cooling plate is provided with a cooling medium inlet and a cooling medium outlet that communicate with the annular cooling cavity.

8. The intake device according to claim 7, characterized in that, At least one sealing ring is arranged at the joint surface formed by the gas-distributing plate and the buffer plate.

9. The intake device according to claim 8, characterized in that, The outer tube extends along the longitudinal extension direction past the inner tube, so as to form an open epitaxial growth region surrounded by the free pipe section of the outer tube away from the buffer plate. The epitaxial growth region communicates with the outer conveying channel. The inner tube forms an inner conveying channel for conveying a second growth gas source to the epitaxial growth region.

10. A vapor phase epitaxial growth apparatus, characterized in that, Comprising: The intake device according to any one of claims 1 to 9, wherein the vapor phase epitaxial growth device is an HVPE device or an MOCVD device.

Images