Cantilever beam type loudspeaker and preparation method thereof

Abstract

The invention discloses a cantilever beam type loudspeaker and a preparation method thereof. The cantilever beam type loudspeaker comprises a substrate; a plurality of cantilever beams, wherein the cantilever beams are located at one side of the substrate; a slit is formed between every two adjacent cantilever beams; the two adjacent cantilever beams are at least partially overlapped in the vibration direction of the cantilever beams. And the cavity penetrates through the substrate and is communicated with the slit. According to the invention, the two adjacent cantilever beams are at least partially overlapped, so that the length of the slit between the two adjacent cantilever beams can be prolonged, the acoustic impedance of the slit can be increased, the sound short-circuit effect of the cantilever beam type loudspeaker at low frequency can be inhibited, and the low-frequency performance of the cantilever beam type loudspeaker can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of speakers, and in particular, to a cantilever beam type speaker and a preparation method thereof. Background Art

[0002] With the improvement of the performance and the increase of functions of mobile devices such as mobile phones and True Wireless Stereo Earbuds (TWS) headphones, the internal space thereof is continuously compressed, and there are higher requirements for the size and volume of the speakers.

[0003] The cantilever beam type speaker has attracted much attention due to its small size (thickness) and excellent high-frequency performance. The sound generating structure of the cantilever beam type speaker is mostly of the cantilever beam type. The displacement of the sound generating diaphragm of the cantilever beam is large, and the sound generating performance is stronger. However, correspondingly, the slit between the cantilever beams will have a serious decrease in the sound pressure level at low frequencies due to the sound short-circuit effect. At the same time, due to processing errors, the multi-cantilever beam structure will cause misalignment and asynchronous vibration between the cantilever beams due to processing size errors and stress deviations, thereby further expanding the slit and deteriorating the low-frequency performance. Summary of the Invention

[0004] The present invention provides a cantilever beam type speaker and a preparation method thereof to solve the problem that the existing cantilever beam type speaker has poor low-frequency performance due to the influence of short-circuit effect, processing errors, stress deviations, etc.

[0005] In a first aspect, an embodiment of the present invention provides a cantilever beam type speaker, including:

[0006] A substrate;

[0007] A plurality of cantilever beams, the cantilever beams being located on one side of the substrate; there is a slit between adjacent two of the cantilever beams; along the vibration direction of the cantilever beams, adjacent two of the cantilever beams at least partially overlap;

[0008] A cavity, along the thickness direction of the substrate, the cavity penetrates the substrate and communicates with the slit.

[0009] Optionally, the slit includes a transverse slit extending along a first direction and a longitudinal slit extending along a second direction, and the first direction and the second direction intersect.

[0010] Optionally, the cantilever beam includes an elastic support layer and a piezoelectric drive layer stacked along the second direction; the elastic support layer is located on one side of the substrate, and the piezoelectric drive layer is located on the side of the elastic support layer away from the substrate;

[0011] The lateral slit includes a first lateral slit which is located between the elastic support layer and the piezoelectric drive layer;

[0012] The longitudinal slit includes a first longitudinal slit and a second longitudinal slit; the first longitudinal slit penetrates through the elastic support layer and is respectively communicated with the cavity and the first lateral slit; the second longitudinal slit penetrates through the piezoelectric drive layer and is communicated with the first lateral slit.

[0013] Optionally, the cantilever beam includes an elastic support layer and a piezoelectric drive layer which are stacked along the second direction; the elastic support layer is located on one side of the substrate, and the piezoelectric drive layer is located on the side of the elastic support layer away from the substrate;

[0014] The lateral slit includes a second lateral slit which penetrates through part of the piezoelectric drive layer and is in contact with the piezoelectric drive layer;

[0015] The longitudinal slit includes a third longitudinal slit and a fourth longitudinal slit; the third longitudinal slit penetrates through the elastic support layer and is respectively communicated with the cavity and the second lateral slit; the fourth longitudinal slit penetrates through the piezoelectric drive layer and is communicated with the second lateral slit.

[0016] Optionally, the cantilever beam includes a piezoelectric drive layer; the piezoelectric drive layer includes a first electrode layer, a first piezoelectric layer, a second electrode layer, a second piezoelectric layer and a third electrode layer which are stacked along the second direction;

[0017] The lateral slit includes a third lateral slit which penetrates through the second electrode layer and is respectively in contact with the first piezoelectric layer and the second piezoelectric layer;

[0018] The longitudinal slit includes a fifth longitudinal slit and a sixth longitudinal slit; the fifth longitudinal slit at least penetrates through the first electrode layer and the first piezoelectric layer and is respectively communicated with the cavity and the third lateral slit; the sixth longitudinal slit penetrates through the third electrode layer and the second piezoelectric layer and is communicated with the third lateral slit.

[0019] Optionally, the cantilever beam type loudspeaker further includes an insulating layer;

[0020] The insulating layer is located between the substrate and the cantilever beam.

[0021] In a second aspect, an embodiment of the present invention provides a manufacturing method of a cantilever beam type loudspeaker for manufacturing the cantilever beam type loudspeaker as described in the first aspect. The manufacturing method includes:

[0022] Prepare a substrate;

[0023] Prepare a plurality of cantilever beams on one side of the substrate, wherein there is a slit between two adjacent cantilever beams, and along the vibration direction of the cantilever beams, two adjacent cantilever beams at least partially overlap;

[0024] Prepare a cavity penetrating the substrate from the side of the substrate away from the cantilever beams, wherein the cavity communicates with the slit.

[0025] Optionally, the slit includes a transverse slit extending in a first direction and a longitudinal slit extending in a second direction, and the first direction intersects the second direction; the transverse slit includes a first transverse slit; the longitudinal slit includes a first longitudinal slit and a second longitudinal slit;

[0026] Preparing a plurality of cantilever beams on one side of the substrate includes:

[0027] Prepare an elastic support layer on one side of the substrate;

[0028] Prepare a first sacrificial layer penetrating the elastic support layer;

[0029] Prepare a second sacrificial layer on the side of the elastic support layer and the first sacrificial layer away from the substrate;

[0030] Prepare a piezoelectric drive layer on the side of the elastic support layer and the second sacrificial layer away from the substrate;

[0031] Prepare the second longitudinal slit penetrating the piezoelectric drive layer from the side of the piezoelectric drive layer away from the substrate;

[0032] After preparing the cavity penetrating the substrate from the side of the substrate away from the cantilever beams, the preparation method further includes:

[0033] Release the first sacrificial layer to obtain the first longitudinal slit, wherein the first longitudinal slit penetrates the elastic support layer and communicates with the cavity;

[0034] Release the second sacrificial layer to obtain the first transverse slit, wherein the first transverse slit is located between the elastic support layer and the piezoelectric drive layer and communicates with the first longitudinal slit and the second longitudinal slit respectively.

[0035] Optionally, the slit includes a transverse slit extending in a first direction and a longitudinal slit extending in a second direction, and the first direction intersects the second direction; the transverse slit includes a second transverse slit; the longitudinal slit includes a third longitudinal slit and a fourth longitudinal slit;

[0036] Preparing a plurality of cantilever beams on one side of the substrate includes:

[0037] Prepare an elastic support layer on one side of the substrate;

[0038] Prepare a third sacrificial layer that penetrates the elastic support layer;

[0039] Prepare a fourth sacrificial layer that penetrates part of the elastic support layer from the side of the elastic support layer away from the substrate, wherein the fourth sacrificial layer is in contact with the third sacrificial layer;

[0040] Prepare a piezoelectric driving layer on the side of the elastic support layer, the third sacrificial layer, and the fourth sacrificial layer away from the substrate;

[0041] Prepare the fourth longitudinal slit that penetrates the piezoelectric driving layer from the side of the piezoelectric driving layer away from the substrate;

[0042] After preparing a cavity that penetrates the substrate from the side of the substrate away from the cantilever beam, the manufacturing method further includes:

[0043] Release the third sacrificial layer to obtain the third longitudinal slit, wherein the third longitudinal slit penetrates the elastic support layer and communicates with the cavity;

[0044] Release the fourth sacrificial layer to obtain the second transverse slit, wherein the second transverse slit penetrates part of the piezoelectric driving layer and communicates with the third longitudinal slit and the fourth longitudinal slit respectively.

[0045] Optionally, the slit includes a transverse slit extending in a first direction and a longitudinal slit extending in a second direction, and the first direction and the second direction intersect; the transverse slit includes a third transverse slit; the longitudinal slit includes a fifth longitudinal slit and a sixth longitudinal slit;

[0046] Prepare a plurality of cantilever beams on one side of the substrate, including:

[0047] Prepare a first electrode layer on one side of the substrate;

[0048] Prepare a first piezoelectric layer on the side of the first electrode layer away from the substrate;

[0049] Prepare a fifth sacrificial layer that penetrates the first electrode layer and the first piezoelectric layer from the side of the first piezoelectric layer away from the substrate;

[0050] Prepare a sixth sacrificial layer on the side of the first piezoelectric layer and the fifth sacrificial layer away from the substrate;

[0051] Prepare a second electrode layer on the side of the first piezoelectric layer away from the substrate;

[0052] Fabricate a second piezoelectric layer on a side of the second electrode layer and the sixth sacrificial layer away from the substrate;

[0053] Fabricate a third electrode layer on a side of the second piezoelectric layer away from the substrate;

[0054] Fabricate the sixth longitudinal slit penetrating the third electrode layer and the second piezoelectric layer from a side of the third electrode layer away from the substrate;

[0055] After fabricating a cavity penetrating the substrate from a side of the substrate away from the cantilever beam, the fabrication method further includes:

[0056] Release the fifth sacrificial layer to obtain the fifth longitudinal slit, where the fifth longitudinal slit penetrates the first electrode layer and the first piezoelectric layer and is in communication with the cavity;

[0057] Release the sixth sacrificial layer to obtain the third transverse slit, where the third transverse slit penetrates the second electrode layer and is in communication with the fifth longitudinal slit and the sixth longitudinal slit respectively.

[0058] The technical solution of the embodiment of the present invention can extend the length of the slit between two adjacent cantilever beams, increase the acoustic impedance of the slit, suppress the sound short - circuit effect of the cantilever - type speaker at low frequencies, and is beneficial to improving the low - frequency performance of the cantilever - type speaker by setting at least partial overlap of two adjacent cantilever beams.

[0059] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present invention, nor is it used to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0060] To more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following - described drawings are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0061] Figure 1 It is a schematic structural diagram of a cantilever - type speaker provided by an embodiment of the present invention;

[0062] Figure 2 It is a schematic structural diagram of another cantilever - type speaker provided by an embodiment of the present invention;

[0063] Figure 3 It is a schematic structural diagram of yet another cantilever - type speaker provided by an embodiment of the present invention;

[0064] Figure 4 Schematic structural diagram of another cantilever speaker provided by an embodiment of the present invention;

[0065] Figure 5 Flowchart of a preparation method of a cantilever speaker provided by an embodiment of the present invention;

[0066] Figure 6 Flowchart of another preparation method of a cantilever speaker provided by an embodiment of the present invention;

[0067] Figure 7 Schematic diagram of a preparation process of a cantilever speaker provided by an embodiment of the present invention;

[0068] Figure 8 Flowchart of another preparation method of a cantilever speaker provided by an embodiment of the present invention;

[0069] Figure 9 Schematic diagram of another preparation process of a cantilever speaker provided by an embodiment of the present invention;

[0070] Figure 10 Flowchart of another preparation method of a cantilever speaker provided by an embodiment of the present invention;

[0071] Figure 11 Schematic diagram of another preparation process of a cantilever speaker provided by an embodiment of the present invention. Detailed implementation manners

[0072] In order to enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0073] It should be noted that the terms "first", "second", etc. in the description, claims and above-mentioned drawings of the present invention are used to distinguish similar objects, and do not necessarily have to be used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present invention described here can be implemented in an order other than those illustrated or described here. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices. The orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", etc. is based on the orientation or positional relationship shown in the drawings, and is only used to illustrate the relative positional relationship between each component or component part, and does not particularly limit the specific installation orientation of each component or component part.

[0074] Figure 1 FIG. is a schematic structural diagram of a cantilever beam type speaker provided by an embodiment of the present invention. Refer to Figure 1 , the cantilever beam type speaker in the embodiment of the present invention includes: a substrate 10, a plurality of cantilever beams 20 and a cavity 30. The cantilever beams 20 are located on one side of the substrate 10. There is a slit 40 between two adjacent cantilever beams 20. Along the vibration direction of the cantilever beam 20, two adjacent cantilever beams 20 at least partially overlap. Along the thickness direction of the substrate 10, the cavity 30 penetrates through the substrate 10 and communicates with the slit 40.

[0075] The cantilever beam type speaker can generate sound by using the mechanical vibration of the cantilever beam 20. Specifically, as Figure 1 shown, one end of the cantilever beam 20 is connected to the substrate 10 and fixed on the substrate 10, and the other end overlaps with the cavity 30 penetrating through the substrate 10 along the thickness direction of the substrate 10 and can vibrate up and down. It can be understood that the component driving the vibration of the cantilever beam 20 can be a piezoelectric material, an electromagnetic coil or other types of drivers, and the vibration direction of the cantilever beam 20 can be parallel to the thickness direction of the substrate 10.

[0076] Figure 1The illustrated embodiment is described by taking the component driving the vibration of the cantilever beam 20 as a piezoelectric material as an example. Specifically, the cantilever beam type loudspeaker includes a piezoelectric driving layer 22, and the piezoelectric driving layer 22 includes a bottom electrode layer 22A, an intermediate piezoelectric layer 22B, and a top electrode layer 22C stacked in the second direction Y. The second direction Y may be parallel to the thickness direction of the substrate 10. The intermediate piezoelectric layer 22B is made of a piezoelectric material having a piezoelectric effect. By applying an electrical signal (an alternating voltage carrying an audio signal) to the bottom electrode layer 22A and the top electrode layer 22C, an electric field can be generated. The intermediate piezoelectric layer 22B is located in the electric field. Affected by the inverse piezoelectric effect, the intermediate piezoelectric layer 22B will deform to generate vibration, and then generate sound. The cantilever beam 20 may only include the piezoelectric driving layer 22, but in order to provide mechanical support for the cantilever beam 20, optimize the vibration efficiency, protect the piezoelectric material, adjust the resonance frequency, and improve the acoustic performance, the cantilever beam 20 is also provided to include an elastic support layer 21. The elastic support layer 21 is located between the substrate 10 and the piezoelectric driving layer 22, which can improve the overall performance and service life of the piezoelectric cantilever beam type loudspeaker. It can be understood that the elastic support layer 21 and the piezoelectric driving layer 22 are fixed together to jointly form the cantilever beam 20. Therefore, when the piezoelectric driving layer 22 deforms to generate vibration, the elastic support layer 21 will also deform to generate vibration with the piezoelectric driving layer 22.

[0077] It should be noted that two adjacent cantilever beams 20 refer to two cantilever beams 20 directly separated by the same slit 30. The specific shapes and numbers of the cantilever beam 20 and the slit 40 in the embodiments of the present invention are not limited, and those skilled in the art can set them by themselves.

[0078] In the embodiments of the present invention, by setting at least partial overlap of two adjacent cantilever beams 20, the length of the slit between two adjacent cantilever beams 20 can be extended, the acoustic impedance of the slit 40 can be increased, the sound short-circuit effect of the cantilever beam type loudspeaker at low frequencies can be suppressed, which is beneficial to improving the low-frequency performance of the cantilever beam type loudspeaker.

[0079] Continue to refer to Figure 1 , the slit 40 includes a transverse slit 41 extending in the first direction X and a longitudinal slit 42 extending in the second direction Y, and the first direction X and the second direction Y intersect.

[0080] It should be noted that in the embodiments of the present invention, the first direction X may be perpendicular to the second direction Y. To ensure that at least partial overlap of two adjacent cantilever beams 20 along their vibration directions, there is at least one transverse slit 41 extending in the first direction X in the embodiments of the present invention, and there are at least two longitudinal slits 42 extending in the second direction Y, and two of the longitudinal slits 42 need to be respectively communicated with both ends of the transverse slit 41.

[0081] In the existing cantilever beam type loudspeaker, the slit between two adjacent cantilever beams only includes a longitudinal slit extending in the second direction and communicating with the cavity. At this time, there is no overlap between two adjacent cantilever beams along their vibration directions. However, this cantilever beam structure is very sensitive to processing stress. Once the stress is too large, the slit will expand due to excessive static deformation of the cantilever beam. In this embodiment of the present invention, by providing the transverse slit 41, the acoustic impedance of the slit 40 can be increased. When the cantilever beam 20 deforms under the influence of stress, the slit 40 will not expand. Moreover, the width of the transverse slit 41 will also decrease, which can further increase the acoustic impedance of the slit 40 and reduce the influence of the acoustic short-circuit effect on the low-frequency performance of the cantilever beam type loudspeaker.

[0082] Figure 2 FIG. is a schematic structural diagram of another cantilever beam type loudspeaker provided by an embodiment of the present invention. Refer to Figure 1 and Figure 2 , the cantilever beam 20 includes an elastic support layer 21 and a piezoelectric drive layer 22 stacked along the second direction Y. The elastic support layer 21 is located on one side of the substrate 10, and the piezoelectric drive layer 22 is located on the side of the elastic support layer 21 away from the substrate 10. The transverse slit 41 includes a first transverse slit 411, and the first transverse slit 411 is located between the elastic support layer 21 and the piezoelectric drive layer 22. The longitudinal slit 42 includes a first longitudinal slit 421 and a second longitudinal slit 422. The first longitudinal slit 421 penetrates through the elastic support layer 21 and communicates with the cavity 30 and the first transverse slit 411 respectively. The second longitudinal slit 422 penetrates through the piezoelectric drive layer 22 and communicates with the first transverse slit 411.

[0083] Figure 3 FIG. is a schematic structural diagram of yet another cantilever beam type loudspeaker provided by an embodiment of the present invention. Refer to Figure 3 , the cantilever beam 20 includes an elastic support layer 21 and a piezoelectric drive layer 22 stacked along the second direction Y. The elastic support layer 21 is located on one side of the substrate 10, and the piezoelectric drive layer 22 is located on the side of the elastic support layer 21 away from the substrate 10. The transverse slit 41 includes a second transverse slit 412, and the second transverse slit 412 penetrates through a part of the piezoelectric drive layer 22 and is in contact with the piezoelectric drive layer 22. The longitudinal slit 42 includes a third longitudinal slit 423 and a fourth longitudinal slit 424. The third longitudinal slit 423 penetrates through the elastic support layer 21 and communicates with the cavity 30 and the second transverse slit 412 respectively. The fourth longitudinal slit 424 penetrates through the piezoelectric drive layer 22 and communicates with the second transverse slit 412.

[0084] Figure 2 and Figure 3The cantilevers 20 in the shown cantilever loudspeaker each include an elastic support layer 21 and a piezoelectric drive layer 22, and the piezoelectric drive layer 22 all includes a bottom electrode layer 22A, an intermediate piezoelectric layer 22B, and a top electrode layer 22C stacked in the second direction Y. The difference lies in the position of the transverse slit 41. Figure 2 The shown transverse slit 41, that is, the first transverse slit 411, is located between the elastic support layer 21 and the piezoelectric drive layer 22. Figure 3 The shown transverse slit 41, that is, the second transverse slit 412, is located in the elastic support layer 21. It should be noted that in the embodiments of the present invention, the position where the transverse slit 41 is located is not limited, as long as it is located in the cantilever 20 and is not directly connected to the cavity 30 or the external environment (that is, along the vibration direction of the cantilever 20, at least part of two adjacent cantilevers 20 overlap), it can also be located in the bottom electrode layer 22A, the intermediate piezoelectric layer 22B, etc. Those skilled in the art can set it according to the embodiments.

[0085] Figure 4 It is a schematic structural diagram of another cantilever loudspeaker provided by the embodiments of the present invention. Refer to Figure 4 , the cantilever 20 includes a piezoelectric drive layer 22. The piezoelectric drive layer 22 includes a first electrode layer 221, a first piezoelectric layer 222, a second electrode layer 223, a second piezoelectric layer 224, and a third electrode layer 225 stacked in the second direction Y. The transverse slit 41 includes a third transverse slit 413. The third transverse slit 413 penetrates through the second electrode layer 223 and is in contact with the first piezoelectric layer 222 and the second piezoelectric layer 224 respectively. The longitudinal slit 42 includes a fifth longitudinal slit 425 and a sixth longitudinal slit 426. The fifth longitudinal slit 425 at least penetrates through the first electrode layer 221 and the first piezoelectric layer 222 and is in communication with the cavity 30 and the third transverse slit 413 respectively. The sixth longitudinal slit 426 penetrates through the third electrode layer 225 and the second piezoelectric layer 224 and is in communication with the third transverse slit 413.

[0086] Figure 4 The cantilever 20 in the shown cantilever loudspeaker only includes a piezoelectric drive layer 22, and its transverse slit 41, that is, the third transverse slit 413, is located on the same layer as the second electrode layer 223. It should be noted that in the embodiments of the present invention, the position where the transverse slit 41 is located is not limited, as long as it is located in the cantilever 20 and is not directly connected to the cavity 30 or the external environment (that is, along the vibration direction of the cantilever 20, at least part of two adjacent cantilevers 20 overlap), it can also be located in the first piezoelectric layer 222, the second piezoelectric layer 224, etc. Those skilled in the art can set it according to the embodiments.

[0087] It should be noted that in all embodiments of the present invention, the structure of the piezoelectric driving layer 22 and whether the cantilever beam 20 includes an elastic support layer 21 are not limited. The piezoelectric driving layer 22 can be, for example, Figure 2 , Figure 3 the piezoelectric driving layer 22 including a bottom electrode layer 22A, an intermediate piezoelectric layer 22B, and a top electrode layer 22C stacked along the second direction Y as shown in the embodiment, or it can be, for example, Figure 4 the piezoelectric driving layer 22 including a first electrode layer 221, a first piezoelectric layer 222, a second electrode layer 223, a second piezoelectric layer 224, and a third electrode layer 225 stacked along the second direction Y as shown. Those skilled in the art can set it by themselves.

[0088] Referring to Figure 2 , Figure 3 and Figure 4 , the cantilever beam type loudspeaker further includes an insulating layer 50. The insulating layer 50 is located between the substrate 10 and the cantilever beam 20.

[0089] Exemplarily, the material of the insulating layer 50 can be silicon oxide. By providing the insulating layer 50 between the substrate 10 and the cantilever beam 20 (elastic support layer 21), it can play the roles of electrical isolation, protecting the piezoelectric material, and improving reliability.

[0090] It should be noted that the insulating layer 50 in the embodiments of the present invention can be Figure 2 , Figure 3 and Figure 4 shown as only located between the substrate 10 and the elastic support layer 21; it can also be located between the substrate 10 and the elastic support layer 21 and between the cavity 40 and the elastic support layer 21. In this case, the cantilever beam 20 in the embodiments of the present invention will include the insulating layer 50, and the slit 40 will also penetrate through the insulating layer 50 and communicate with the cavity 40.

[0091] The embodiments of the present invention provide a manufacturing method of a cantilever beam type loudspeaker for manufacturing the cantilever beam type loudspeaker shown in any of the above embodiments of the present invention. Figure 5 It is a flowchart of a manufacturing method of a cantilever beam type loudspeaker provided by an embodiment of the present invention. Referring to Figure 5 , the manufacturing method of the cantilever beam type loudspeaker in the embodiments of the present invention includes:

[0092] S110. Prepare a substrate.

[0093] Exemplarily, referring to Figure 1 , the substrate in the embodiments of the present invention can adopt a silicon substrate.

[0094] S120. Prepare a plurality of cantilever beams on one side of the substrate. Among them, there is a slit between adjacent two cantilever beams, and along the vibration direction of the cantilever beam, adjacent two cantilever beams at least partially overlap.

[0095] Exemplary, reference Figure 1 The cantilever beam 20 can be prepared on one side of the substrate 10 by a deposition, evaporation or bonding process.

[0096] S130, preparing a cavity penetrating the substrate from a side of the substrate away from the cantilever beam, wherein the cavity is connected to the slit.

[0097] Exemplary, reference Figure 1 The cavity 40 penetrating the substrate 10 may be prepared from the side of the substrate 10 away from the cantilever beam 20 by an etching process.

[0098] The embodiment of the present invention arranges two adjacent cantilever beams 20 to at least partially overlap, thereby extending the length of the slit between the two adjacent cantilever beams 20, increasing the acoustic impedance of the slit 40, suppressing the sound short-circuit effect of the cantilever beam speaker at low frequencies, and helping to improve the low-frequency performance of the cantilever beam speaker.

[0099] refer to Figure 2 The slits 40 include a transverse slit 41 extending along a first direction X and a longitudinal slit 42 extending along a second direction Y, and the first direction X intersects with the second direction Y. The transverse slit 41 includes a first transverse slit 411 . The longitudinal slit 42 includes a first longitudinal slit 421 and a second longitudinal slit 422 . Figure 2 The cantilever beam speaker further includes an insulating layer 50 . Figure 6 A flowchart of another method for preparing a cantilever beam loudspeaker provided in an embodiment of the present invention, Figure 6 The embodiment shown in the figure describes in detail how to prepare a plurality of cantilever beams on one side of a substrate. Figure 6 The method for preparing the cantilever beam loudspeaker in the embodiment of the present invention comprises:

[0100] S210, preparing a substrate.

[0101] S220, preparing an elastic supporting layer on one side of the substrate.

[0102] Figure 7 A schematic diagram of a process for preparing a cantilever beam loudspeaker provided in an embodiment of the present invention, Figure 7 Figure (a1) in FIG. 1 directly shows a schematic diagram including a substrate 10, an insulating layer 50 and an elastic support layer 21. It should be noted that: Figure 7 Figure (a1) can be obtained by first preparing a substrate 10, and then sequentially preparing an insulating layer 50 and an elastic support layer 21 on the substrate 10, or it can be obtained directly by using an SOI substrate including the substrate 10, the insulating layer 50 and the elastic support layer 21.

[0103] S230, preparing a first sacrificial layer penetrating the elastic supporting layer.

[0104] S240. Prepare a second sacrificial layer on the side of the elastic support layer and the first sacrificial layer away from the substrate.

[0105] Exemplarily, a groove penetrating the elastic support layer 21 can be prepared from the side of the elastic support layer 21 away from the substrate 10 by an etching process, and then the groove is filled with a silica material to obtain the first sacrificial layer 61 penetrating the elastic support layer 21 by a deposition process. After filling the groove, a silica material is continuously deposited on the first sacrificial layer 61 and the elastic support layer 21 to obtain the second sacrificial layer 62 as shown in Fig. (a2). After obtaining the second sacrificial layer 62 as shown in Fig. (a2), the second sacrificial layer 62 needs to be patterned to obtain the second sacrificial layer 62 as shown in Fig. (a3).

[0106] S250. Prepare a piezoelectric driving layer on the side of the elastic support layer and the second sacrificial layer away from the substrate.

[0107] Exemplarily, referring to Figure 7 , the piezoelectric driving layer 22 in the embodiment of the present invention includes a bottom electrode layer 22A, an intermediate piezoelectric layer 22B, and a top electrode layer 22C which are stacked. Specifically, the bottom electrode layer 22A, the intermediate piezoelectric layer 22B, and the top electrode layer 22C can be sequentially prepared on the side of the elastic support layer 21 and the second sacrificial layer 62 away from the substrate by a deposition or evaporation process. The prepared piezoelectric driving layer 22 is as shown in Fig. (a3) in Figure 7

[0108] S260. Prepare a second longitudinal slit penetrating the piezoelectric driving layer from the side of the piezoelectric driving layer away from the substrate.

[0109] Exemplarily, a second longitudinal slit 422 penetrating the piezoelectric driving layer 22 can be prepared from the side of the piezoelectric driving layer 22 away from the substrate 10 by an etching process. The prepared second longitudinal slit 422 is as shown in Fig. (a4) in Figure 7

[0110] S270. Prepare a cavity penetrating the substrate from the side of the substrate away from the cantilever beam.

[0111] Exemplarily, a cavity 30 penetrating the substrate 10 can be prepared from the side of the substrate 10 away from the cantilever beam 20 by an etching process. The prepared cavity 30 is as shown in Fig. (a5) in Figure 7

[0112] S280. Release the first sacrificial layer to obtain a first longitudinal slit, wherein the first longitudinal slit penetrates the elastic support layer and communicates with the cavity.

[0113] S290. Release the second sacrificial layer to obtain a first transverse slit, where the first transverse slit is located between the elastic support layer and the piezoelectric drive layer and communicates with the first longitudinal slit and the second longitudinal slit respectively.

[0114] Exemplarily, the first sacrificial layer 61 and the second sacrificial layer 62 can be removed by a wet release process to obtain the first longitudinal slit 421 and the first transverse slit 411. The prepared first longitudinal slit 421 and first transverse slit 411 are as shown in Figure 7 Figure (a6) in.

[0115] It should be noted that since the material of the insulating layer 50 in the embodiment of the present invention is the same as the materials used to prepare the first sacrificial layer 61 and the second sacrificial layer 62, both being silicon dioxide, when releasing the first sacrificial layer 61 and the second sacrificial layer 62, the insulating layer 50 overlapping the cavity 30 in the thickness direction of the substrate will also be released.

[0116] Refer to Figure 3 , the slit 40 includes a transverse slit 41 extending along the first direction X and a longitudinal slit 42 extending along the second direction Y, and the first direction X and the second direction Y intersect. The transverse slit 41 includes a second transverse slit 412. The longitudinal slit 42 includes a third longitudinal slit 423 and a fourth longitudinal slit 424. Figure 3 The cantilever speaker in also includes an insulating layer 50. Figure 8 is a flowchart of another method for manufacturing a cantilever speaker provided by an embodiment of the present invention. Figure 8 The shown embodiment details how to fabricate multiple cantilevers on one side of a substrate. Refer to Figure 8 , the method for manufacturing a cantilever speaker in the embodiment of the present invention includes:

[0117] S310. Prepare a substrate.

[0118] S320. Prepare an elastic support layer on one side of the substrate.

[0119] Figure 9 is a schematic diagram of another manufacturing process of a cantilever speaker provided by an embodiment of the present invention. Figure 9 Figure (b1) in directly shows a schematic diagram including a substrate 10, an insulating layer 50, and an elastic support layer 21. It should be noted that Figure 9 Figure (b1) in can be obtained by first preparing the substrate 10 and then successively preparing the insulating layer 50 and the elastic support layer 21 on the substrate 10, or directly obtained using an SOI substrate including the substrate 10, the insulating layer 50, and the elastic support layer 21.

[0120] S330. Prepare a third sacrificial layer penetrating the elastic support layer.

[0121] Exemplarily, a groove penetrating the elastic support layer 21 can be prepared from the side of the elastic support layer 21 away from the substrate 10 by an etching process, and then a third sacrificial layer 63 penetrating the elastic support layer 21 can be obtained by filling the groove with a silica material through a deposition process. The prepared third sacrificial layer 63 is as shown in Figure 9 Figure (b2) in

[0122] S340. Prepare a fourth sacrificial layer penetrating a part of the elastic support layer from the side of the elastic support layer away from the substrate, wherein the fourth sacrificial layer is in contact with the third sacrificial layer.

[0123] Exemplarily, a groove penetrating a part of the elastic support layer 21 can be prepared from the side of the elastic support layer 21 away from the substrate 10 by an etching process, and then a fourth sacrificial layer 64 penetrating a part of the elastic support layer 21 can be obtained by filling the groove with a silica material through a deposition process. The prepared fourth sacrificial layer 64 is as shown in Figure 9 Figure (b3) in

[0124] It can be understood that, to ensure the flatness of the subsequent prepared piezoelectric driving layer 22, the third sacrificial layer 63 and the fourth sacrificial layer 64 can also be subjected to a planarization process. Specifically, a chemical mechanical polishing (CMP) process can be used.

[0125] S350. Prepare a piezoelectric driving layer on the side of the elastic support layer, the third sacrificial layer, and the fourth sacrificial layer away from the substrate.

[0126] Exemplarily, referring to Figure 9 , the piezoelectric driving layer 22 in the embodiment of the present invention includes a bottom electrode layer 22A, an intermediate piezoelectric layer 22B, and a top electrode layer 22C which are stacked. Specifically, the bottom electrode layer 22A, the intermediate piezoelectric layer 22B, and the top electrode layer 22C can be sequentially prepared on the side of the elastic support layer 21, the third sacrificial layer 63, and the fourth sacrificial layer 64 away from the substrate by a deposition or evaporation process. The prepared piezoelectric driving layer 22 is as shown in Figure 9 Figure (b4) in

[0127] S360. Prepare a fourth longitudinal slit penetrating the piezoelectric driving layer from the side of the piezoelectric driving layer away from the substrate.

[0128] Exemplarily, a fourth longitudinal slit 424 penetrating the piezoelectric driving layer 22 can be prepared from the side of the piezoelectric driving layer 22 away from the substrate 10 by an etching process. The prepared fourth longitudinal slit 424 is as shown in Figure 9 Figure (b5) in

[0129] S370. Prepare a cavity penetrating the substrate from the side of the substrate away from the cantilever beam.

[0130] Exemplarily, a cavity 30 penetrating the substrate 10 can be prepared from the side of the substrate 10 away from the cantilever beam 20 by an etching process. The prepared cavity 30 is as shown in Figure 9 Figure (b6).

[0131] S380. Release the third sacrificial layer to obtain a third longitudinal slit, where the third longitudinal slit penetrates the elastic support layer and communicates with the cavity.

[0132] S390. Release the fourth sacrificial layer to obtain a second transverse slit, where the second transverse slit penetrates part of the piezoelectric driving layer and communicates with the third longitudinal slit and the fourth longitudinal slit respectively.

[0133] Exemplarily, the third sacrificial layer 63 and the fourth sacrificial layer 64 can be removed by a wet release process to obtain a third longitudinal slit 423 and a second transverse slit 412. The prepared third longitudinal slit 423 and second transverse slit 412 are as shown in Figure 9 Figure (b7).

[0134] It should be noted that since the material of the insulating layer 50 in the embodiments of the present invention is the same as the materials used for preparing the third sacrificial layer 63 and the fourth sacrificial layer 64, which are both silicon dioxide, when releasing the third sacrificial layer 63 and the fourth sacrificial layer 64, the insulating layer 50 overlapping the cavity 30 in the thickness direction of the substrate will also be released.

[0135] Refer to Figure 4 , the slit 40 includes a transverse slit 41 extending along the first direction X and a longitudinal slit 42 extending along the second direction Y, and the first direction X and the second direction Y intersect. The transverse slit 41 includes a third transverse slit 413. The longitudinal slit 42 includes a fifth longitudinal slit 425 and a sixth longitudinal slit 426. Figure 4 The cantilever beam type loudspeaker in Figure 10 also includes an insulating layer 50. Figure 10 is a flowchart of another preparation method of the cantilever beam type loudspeaker provided by the embodiments of the present invention. Figure 10 The embodiments shown have described in detail how to prepare multiple cantilever beams on one side of the substrate. Refer to

[0136] S410. Prepare a substrate.

[0137] S420. Prepare a first electrode layer on one side of the substrate.

[0138] S430. Prepare a first piezoelectric layer on the side of the first electrode layer away from the substrate.

[0139] Exemplarily, Figure 11 FIG. (c1) in [document] is a schematic diagram of a preparation process of another cantilever beam type loudspeaker provided by an embodiment of the present invention. Figure 11 FIG. (c1) in [document] directly shows a schematic diagram including a substrate 10 and an insulating layer 50. It should be noted that Figure 11 FIG. (c1) in [document] can be obtained by first preparing the substrate 10 and then preparing the insulating layer 50 on the substrate 10.

[0140] Referring to Figure 11 , in the embodiment of the present invention, the piezoelectric driving layer 22 includes a first electrode layer 221, a first piezoelectric layer 222, a second electrode layer 223, a second piezoelectric layer 224, and a third electrode layer 225 which are stacked. Specifically, the first electrode layer 221 and the first piezoelectric layer 222 can be sequentially prepared on the side of the insulating layer 50 away from the substrate 10 by deposition or evaporation processes. The prepared first electrode layer 221 and first piezoelectric layer 222 are as shown in Figure 11 FIG. (c2) in [document].

[0141] S440. Prepare a fifth sacrificial layer penetrating the first electrode layer and the first piezoelectric layer from the side of the first piezoelectric layer away from the substrate.

[0142] Exemplarily, a groove penetrating the first electrode layer 221 and the first piezoelectric layer 222 can be prepared from the side of the first piezoelectric layer 222 away from the substrate 10 by an etching process, and then the groove is filled with a silicon dioxide material by a deposition process to obtain the fifth sacrificial layer 65 penetrating the first electrode layer 221 and the first piezoelectric layer 222. The prepared fifth sacrificial layer 65 is as shown in Figure 11 FIG. (c2) in [document].

[0143] S450. Prepare a sixth sacrificial layer on the side of the first piezoelectric layer and the fifth sacrificial layer away from the substrate.

[0144] Exemplarily, after obtaining the fifth sacrificial layer 65, a silicon dioxide material can be continuously deposited on the fifth sacrificial layer 65 and above the first piezoelectric layer 222 by a deposition process to obtain a sixth sacrificial layer 66 provided as a whole layer. After obtaining the sixth sacrificial layer 66 provided as a whole layer, the sixth sacrificial layer 66 provided as a whole layer needs to be patterned to obtain the sixth sacrificial layer 66 shown in FIG. (c2).

[0145] S460. Prepare a second electrode layer on the side of the first piezoelectric layer away from the substrate.

[0146] Exemplarily, the second electrode layer 223 can be sequentially prepared on the side of the first piezoelectric layer 222 away from the substrate 10 by deposition or evaporation processes. The prepared second electrode layer 223 is as shown in Figure 11As shown in Figure (c3), wherein the second electrode layer 223 and the sixth sacrificial layer 66 are arranged on the same layer.

[0147] S470. Prepare a second piezoelectric layer on the side of the second electrode layer and the sixth sacrificial layer away from the substrate.

[0148] Exemplarily, the second piezoelectric layer 224 can be prepared on the side of the second electrode layer 223 and the sixth sacrificial layer 66 away from the substrate 10 by deposition or evaporation processes. The prepared second piezoelectric layer 224 is as shown in Figure 11 Figure (c3).

[0149] S480. Prepare a third electrode layer on the side of the second piezoelectric layer away from the substrate.

[0150] Exemplarily, the third electrode layer 225 can be prepared on the side of the second piezoelectric layer 224 away from the substrate 10 by deposition or evaporation processes. The prepared third electrode layer 225 is as shown in Figure 11 Figure (c3).

[0151] S490. Prepare a sixth longitudinal slit penetrating the third electrode layer and the second piezoelectric layer from the side of the third electrode layer away from the substrate.

[0152] Exemplarily, the sixth longitudinal slit 426 penetrating the third electrode layer 225 and the second piezoelectric layer 224 can be prepared on the side of the third electrode layer 225 away from the substrate 10 by etching processes. The prepared sixth longitudinal slit 426 is as shown in Figure 11 Figure (c4).

[0153] S4100. Prepare a cavity penetrating the substrate from the side of the substrate away from the cantilever beam.

[0154] Exemplarily, the cavity 30 penetrating the substrate 10 can be prepared from the side of the substrate 10 away from the cantilever beam 20 by etching processes. The prepared cavity 30 is as shown in Figure 11 Figure (c5).

[0155] S4110. Release the fifth sacrificial layer to obtain a fifth longitudinal slit, wherein the fifth longitudinal slit penetrates the first electrode layer and the first piezoelectric layer and is communicated with the cavity.

[0156] S4120. Release the sixth sacrificial layer to obtain a third transverse slit, wherein the third transverse slit penetrates the second electrode layer and is respectively communicated with the fifth longitudinal slit and the sixth longitudinal slit.

[0157] Exemplarily, the fifth sacrificial layer 65 and the sixth sacrificial layer 66 can be removed by wet release processes to obtain the fifth longitudinal slit 425 and the third transverse slit 413. The prepared fifth longitudinal slit 425 and third transverse slit 413 are as shown inFigure 11 as shown in Figure (c6).

[0158] It should be noted that since the material of the insulating layer 50 in the embodiment of the present invention is the same as the materials used for preparing the fifth sacrificial layer 65 and the sixth sacrificial layer 66, which are both silicon dioxide, when the fifth sacrificial layer 65 and the sixth sacrificial layer 66 are released, the insulating layer 50 overlapping the cavity 30 in the thickness direction of the substrate will also be released.

[0159] The above specific embodiments do not limit the protection scope of the present invention. Those skilled in the art should understand that various modifications, combinations, sub - combinations and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A cantilever beam type loudspeaker, characterized in that, Comprising: A substrate; A plurality of cantilever beams located on one side of the substrate; there is a slit between two adjacent cantilever beams; Along the vibration direction of the cantilever beam, two adjacent cantilever beams at least partially overlap; A cavity, along the thickness direction of the substrate, the cavity penetrates the substrate and communicates with the slit.

2. The cantilever beam type speaker according to claim 1, wherein The slit includes a transverse slit extending in a first direction and a longitudinal slit extending in a second direction, and the first direction and the second direction intersect.

3. The cantilever speaker according to claim 2, wherein The cantilever beam includes an elastic support layer and a piezoelectric drive layer stacked in the second direction; the elastic support layer is located on one side of the substrate, and the piezoelectric drive layer is located on the side of the elastic support layer away from the substrate; The transverse slit includes a first transverse slit located between the elastic support layer and the piezoelectric drive layer; The longitudinal slit includes a first longitudinal slit and a second longitudinal slit; the first longitudinal slit penetrates the elastic support layer and communicates with the cavity and the first transverse slit respectively; the second longitudinal slit penetrates the piezoelectric drive layer and communicates with the first transverse slit.

4. The cantilever speaker according to claim 2, characterized in that The cantilever beam includes an elastic support layer and a piezoelectric drive layer stacked in the second direction; the elastic support layer is located on one side of the substrate, and the piezoelectric drive layer is located on the side of the elastic support layer away from the substrate; The transverse slit includes a second transverse slit that penetrates part of the piezoelectric drive layer and contacts the piezoelectric drive layer; The longitudinal slit includes a third longitudinal slit and a fourth longitudinal slit; the third longitudinal slit penetrates the elastic support layer and communicates with the cavity and the second transverse slit respectively; the fourth longitudinal slit penetrates the piezoelectric drive layer and communicates with the second transverse slit.

5. The cantilever speaker according to claim 2, wherein The cantilever beam loudspeaker further includes an insulating layer; The insulating layer is located between the substrate and the cantilever beam. The manufacturing method includes:

6. The cantilever speaker according to claim 1, wherein, Preparing a substrate; Preparing a plurality of cantilever beams on one side of the substrate, wherein there is a slit between two adjacent cantilever beams, and along the vibration direction of the cantilever beam, two adjacent cantilever beams at least partially overlap; 7. A method for manufacturing a cantilever beam type speaker, which is used to manufacture the cantilever beam type speaker according to any one of claims 1-6, characterized in that, Preparing a cavity that penetrates the substrate from the side of the substrate away from the cantilever beam, wherein the cavity communicates with the slit. ​ ​ ​ 8. The preparation method according to claim 7, characterized in that, The slit includes a transverse slit extending in a first direction and a longitudinal slit extending in a second direction, where the first direction intersects the second direction; the transverse slit includes a first transverse slit; the longitudinal slit includes a first longitudinal slit and a second longitudinal slit; Fabricating a plurality of cantilever beams on one side of the substrate, including: Fabricating an elastic support layer on one side of the substrate; Fabricating a first sacrificial layer penetrating through the elastic support layer; Fabricating a second sacrificial layer on one side of the elastic support layer and the first sacrificial layer away from the substrate; Fabricating a piezoelectric driving layer on one side of the elastic support layer and the second sacrificial layer away from the substrate; Fabricating the second longitudinal slit penetrating through the piezoelectric driving layer from one side of the piezoelectric driving layer away from the substrate; After fabricating a cavity penetrating through the substrate from one side of the substrate away from the cantilever beam, the fabrication method further includes: Releasing the first sacrificial layer to obtain the first longitudinal slit, where the first longitudinal slit penetrates through the elastic support layer and communicates with the cavity; Releasing the second sacrificial layer to obtain the first transverse slit, where the first transverse slit is located between the elastic support layer and the piezoelectric driving layer and communicates with the first longitudinal slit and the second longitudinal slit respectively.

9. The preparation method according to claim 7, wherein, The slit includes a transverse slit extending in a first direction and a longitudinal slit extending in a second direction, where the first direction intersects the second direction; the transverse slit includes a second transverse slit; the longitudinal slit includes a third longitudinal slit and a fourth longitudinal slit; Fabricating a plurality of cantilever beams on one side of the substrate, including: Fabricating an elastic support layer on one side of the substrate; Fabricating a third sacrificial layer penetrating through the elastic support layer; Fabricating a fourth sacrificial layer penetrating through a part of the elastic support layer from one side of the elastic support layer away from the substrate, where the fourth sacrificial layer contacts the third sacrificial layer; Fabricating a piezoelectric driving layer on one side of the elastic support layer, the third sacrificial layer and the fourth sacrificial layer away from the substrate; Fabricating the fourth longitudinal slit penetrating through the piezoelectric driving layer from one side of the piezoelectric driving layer away from the substrate; After fabricating a cavity penetrating through the substrate from one side of the substrate away from the cantilever beam, the fabrication method further includes: Releasing the third sacrificial layer to obtain the third longitudinal slit, where the third longitudinal slit penetrates through the elastic support layer and communicates with the cavity; Releasing the fourth sacrificial layer to obtain the second transverse slit, where the second transverse slit penetrates through a part of the piezoelectric driving layer and communicates with the third longitudinal slit and the fourth longitudinal slit respectively.

10. The preparation method according to claim 7, characterized in that, The slit includes a transverse slit extending in a first direction and a longitudinal slit extending in a second direction, where the first direction intersects the second direction; the transverse slit includes a third transverse slit; the longitudinal slit includes a fifth longitudinal slit and a sixth longitudinal slit; Fabricating a plurality of cantilever beams on one side of the substrate, including: Fabricating a first electrode layer on one side of the substrate; Fabricating a first piezoelectric layer on one side of the first electrode layer away from the substrate; A fifth sacrificial layer penetrating the first electrode layer and the first piezoelectric layer is prepared on a side of the first piezoelectric layer away from the substrate; A sixth sacrificial layer is prepared on a side of the first piezoelectric layer and the fifth sacrificial layer away from the substrate; A second electrode layer is prepared on a side of the first piezoelectric layer away from the substrate; A second piezoelectric layer is prepared on a side of the second electrode layer and the sixth sacrificial layer away from the substrate; A third electrode layer is prepared on a side of the second piezoelectric layer away from the substrate; The sixth longitudinal slit penetrating the third electrode layer and the second piezoelectric layer is prepared on a side of the third electrode layer away from the substrate; After a cavity penetrating the substrate is prepared on a side of the substrate away from the cantilever beam, the manufacturing method further includes: Releasing the fifth sacrificial layer to obtain the fifth longitudinal slit, wherein the fifth longitudinal slit penetrates the first electrode layer and the first piezoelectric layer and communicates with the cavity; Releasing the sixth sacrificial layer to obtain the third transverse slit, wherein the third transverse slit penetrates the second electrode layer and communicates with the fifth longitudinal slit and the sixth longitudinal slit respectively.

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