Multifunctional device, chip, multifunctional device control method and device

Abstract

The invention provides a multifunctional device, a chip and a multifunctional device control method and device, and belongs to the technical field of chips. The multifunctional device comprises a signal sensing unit which is used for collecting an optical signal and / or a thermal signal and comprises a phase change device, a first electrode connected with a first side of the phase change device and a second electrode connected with a second side of the phase change device; the magnetic storage unit is used for storing optical signals and / or thermal signals and comprises a heavy metal layer, a magnetic tunnel junction and a top electrode which are sequentially stacked; a third electrode is arranged on the first side of the heavy metal layer, a fourth electrode is arranged on the second side of the heavy metal layer, and the top electrode and the fourth electrode form a data reading port and are used for determining the type of executing Boolean logic operation based on the type of the optical signal and the type of the thermal signal. According to the invention, the problems of extra power consumption and time delay caused by continuous transmission of data among different units due to the fact that data acquisition, analysis, calculation and storage of the current power Internet of Things are independently completed by adopting different chips are solved.

Description

Technical Field

[0001] The present invention relates to the field of chip technology, and in particular to a multifunctional device, a chip, a method for controlling a multifunctional device, a device for controlling a multifunctional device, a machine-readable storage medium, and a computer program product. Background Art

[0002] The power Internet of Things is the application of the Internet of Things in the smart grid and is the result of the development of information and communication technology to a certain stage. Since the power Internet of Things needs to perform in-depth analysis and processing on a large amount of unstructured data, it has high requirements for advanced sensing and efficient memory and computing.

[0003] Currently, data acquisition, analysis and calculation, and storage in the power Internet of Things are independently completed by different chips, and data needs to be continuously transmitted between different units, which inevitably leads to additional power consumption and delay. Summary of the Invention

[0004] The purpose of the embodiments of the present invention is to provide a multifunctional device, a chip, a method and a device for controlling a multifunctional device, so as to solve the defect that data acquisition, analysis and calculation, and storage in the current power Internet of Things are independently completed by different chips, and data needs to be continuously transmitted between different units, which inevitably leads to additional power consumption and delay.

[0005] To achieve the above purpose, the embodiments of the present invention provide a multifunctional device, including:

[0006] A signal sensing unit for collecting external optical signals and / or thermal signals, the signal sensing unit including a phase change device, a first electrode connected to a first side of the phase change device, and a second electrode connected to a second side of the phase change device;

[0007] A magnetic storage unit for storing the optical signals and / or the thermal signals, the magnetic storage unit including a heavy metal layer, a magnetic tunnel junction, and a top electrode stacked in sequence;

[0008] Wherein, a third electrode is provided on a first side of the heavy metal layer, a fourth electrode is provided on a second side of the heavy metal layer, the third electrode is electrically connected to the second electrode, and the top electrode and the fourth electrode form a readout port for data, and are used to determine the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal.

[0009] Optionally, the magnetic tunnel junction includes a free layer, a tunneling barrier layer, and a reference layer stacked in sequence from the heavy metal layer to the top electrode.

[0010] Optionally, the phase change device is made of any one of vanadium oxide and tin indium oxide.

[0011] Optionally, the free layer is made of any one or more of iron, cobalt, boron, and nickel, and the reference layer is made of any one or more of iron, cobalt, boron, and nickel, wherein the materials of the free layer and the reference layer are different.

[0012] Optionally, the tunneling barrier layer is made of aluminum oxide and / or magnesium oxide.

[0013] On the other hand, an embodiment of the present invention further provides a chip, including the above-mentioned multifunctional device.

[0014] On the other hand, an embodiment of the present invention further provides a method for controlling a multifunctional device, which is applied to the above-mentioned multifunctional device, and the method includes:

[0015] Controlling the signal sensing unit to receive optical signals and thermal signals;

[0016] Controlling the magnetic storage unit to determine the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal.

[0017] Optionally, the type of the optical signal includes a first optical signal that causes a partial phase change of the phase change device, and the thermal signal includes a first thermal signal that causes a partial phase change of the phase change device;

[0018] The controlling the magnetic storage unit to determine the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal includes:

[0019] Controlling the magnetic storage unit to determine to perform a logical AND operation based on the first optical signal and the first thermal signal.

[0020] Optionally, the type of the optical signal includes a second optical signal that causes a complete phase change of the phase change device, and the thermal signal includes a second thermal signal that causes a complete phase change of the phase change device;

[0021] The controlling the magnetic storage unit to determine the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal includes:

[0022] Controlling the magnetic storage unit to determine to perform a logical OR operation based on the second optical signal and the second thermal signal.

[0023] On the other hand, an embodiment of the present invention further provides a control device for a multifunctional device, including:

[0024] A first control module, configured to control the signal sensing unit to receive optical signals and thermal signals;

[0025] A second control module, configured to control the magnetic storage unit to determine the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal.

[0026] Optionally, the type of the optical signal includes a first optical signal that causes a partial phase change of the phase change device, and the thermal signal includes a first thermal signal that causes a partial phase change of the phase change device;

[0027] The control magnetic storage unit determines the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal, including:

[0028] The control magnetic storage unit determines to perform a logical AND operation based on the first optical signal and the first thermal signal.

[0029] Optionally, the type of the optical signal includes a second optical signal that causes a complete phase change of the phase change device, and the thermal signal includes a second thermal signal that causes a complete phase change of the phase change device;

[0030] The control magnetic storage unit determines the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal, including:

[0031] The control magnetic storage unit determines to perform a logical OR operation based on the second optical signal and the second thermal signal.

[0032] On the other hand, the present invention also provides a machine-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the above-mentioned multi-functional device control method is implemented.

[0033] On the other hand, the present invention also provides a computer program product, including a computer program, and when the computer program is executed by a processor, the above-mentioned multi-functional device control method is implemented.

[0034] Through the above technical solutions, the present invention realizes the acquisition of external optical signals and / or thermal signals through a signal sensing unit, realizes the storage of optical signals and / or thermal signals through a magnetic storage unit, and realizes Boolean logic operations based on optical signals and thermal signals. The present invention further integrates functions such as sensing, storage, and calculation, reduces the time and energy consumption of data transmission and storage, and improves the efficiency of data processing and storage.

[0035] Other features and advantages of the embodiments of the present invention will be described in detail in the subsequent specific implementation part. Description of the Drawings

[0036] The drawings are used to provide a further understanding of the embodiments of the present invention, and constitute a part of the specification, and are used to explain the embodiments of the present invention together with the following specific implementation manners, but do not constitute a limitation to the embodiments of the present invention. In the drawings:

[0037] Figure 1 is a schematic structural diagram of the multi-functional device provided by the present invention;

[0038] Figure 2 is the relationship curve diagram of the vanadium dioxide resistor provided by the present invention with temperature and light intensity;

[0039] Figure 3 is the curve diagram of the resistance state of the magnetic tunnel junction changing with current provided by the present invention;

[0040] Figure 4 is the schematic flow diagram of the multi-functional device control method provided by the present invention;

[0041] Figure 5 is the schematic diagram of the resistance of vanadium dioxide changing with temperature and light intensity and the output truth table of the magnetic tunnel junction provided by the present invention;

[0042] Figure 6 is the schematic structural diagram of the multi-functional device control device provided by the present invention. Detailed Embodiment

[0043] The following will describe in detail the specific embodiments of the embodiments of the present invention with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the embodiments of the present invention, and are not used to limit the embodiments of the present invention.

[0044] Currently, the data acquisition, analysis and calculation, and storage of the current power Internet of Things are independently completed by different chips, and data needs to be continuously transmitted between different units, resulting in inevitable additional power consumption and delay. At the same time, in the development process of modern semiconductor technology, the performance gap between processors and memories is getting larger and larger, resulting in the problem of the "memory wall". That is, the serious imbalance between the memory bandwidth and latency and the processor performance. Since data cannot be transmitted between the processor and the memory in time, it hinders the actual performance of the computer system. These problems will become more and more serious in future data-centric computing tasks, making most of the energy and time consumed in data transmission rather than computing.

[0045] In view of this, the embodiments of the present invention provide a multi-functional device, a chip, a multi-functional device control method and device, which are used to solve the defect that the data acquisition, analysis and calculation, and storage of the current power Internet of Things are independently completed by different chips, and data needs to be continuously transmitted between different units, inevitably resulting in additional power consumption and delay.

[0046] Device Embodiment

[0047] Please refer to Figure 1 , the embodiments of the present invention provide a multi-functional device, including a signal sensing unit 10 and a magnetic storage unit 20.

[0048] Among them, the signal sensing unit 10 is used to collect external optical signals and / or thermal signals. The signal sensing unit 10 includes a phase change device 110, a first electrode 121 connected to the first side of the phase change device 110, and a second electrode 122 connected to the second side of the phase change device 110. That is, the first electrode 121 and the second electrode 122 can be provided on both sides of the phase change device 110. In some embodiments, the phase change device 110 is made of any one of vanadium oxide and tin indium oxide. In one embodiment, the phase change device 110 in the embodiments of the present invention can be made of vanadium oxide. For example, the phase change device 110 can be made of vanadium dioxide VO2. Since vanadium dioxide is a functional oxide material with the ability of phase change, it will undergo a reversible transition from a low-temperature insulator phase to a high-temperature metal phase near 340K. This unique property makes vanadium dioxide suitable as a phase change device for sensing optical signals and / or thermal signals.

[0049] The magnetic storage unit 20 is used to store the optical signal and / or the thermal signal. The magnetic storage unit 20 includes a heavy metal layer 250, a magnetic tunnel junction, and a top electrode 210 that are stacked in sequence. Among them, the magnetic storage unit 20 is a magnetic random access memory (MRAM) based on the magnetoresistive storage mechanism, and has advantages such as ultra-low power consumption, high speed, and natural radiation resistance. It is very suitable for application scenarios such as big data storage and high-speed computing, and can be applied to fields such as the power industry. In particular, the magnetic random access memory of spin orbital torque (SOT) separates the read and write paths of the device, significantly improving the durability and read stability of the device and reducing the switching delay.

[0050] In the embodiments of the present invention, through the signal sensing unit 10 and the magnetic storage unit 20, data can be quickly read and stored, while reducing the time and energy consumption of data transmission and storage, and improving the efficiency of data processing and storage. By integrating the sensing and storage functions on the same chip, the number and occupied space of sensors and memories can be reduced, while reducing the maintenance cost and failure rate of the device.

[0051] In addition, a third electrode 261 is provided on the first side of the heavy metal layer 250, a fourth electrode 262 is provided on the second side of the heavy metal layer 250, and the third electrode 261 is electrically connected to the second electrode 122. That is, the signal sensing unit 10 is connected to the magnetic storage unit 20 through the third electrode 261 and the second electrode 122. Among them, the first electrode 121, the second electrode 122, the third electrode 261, and the fourth electrode 262 can all be made of one or more materials among tantalum, aluminum, gold, chromium, copper, molybdenum, tungsten, and platinum. The top electrode 210 and the heavy metal layer 250 can both be made of one or more materials among tantalum, aluminum, gold, chromium, copper, molybdenum, tungsten, and platinum.

[0052] A second electrode port 2 is provided on the first electrode 121 of the signal sensing unit 10, a third electrode port 3 is provided on the fourth electrode 262 of the magnetic storage unit 20, and a first electrode port 1 is provided on the top electrode 210; the second electrode port 2 and the third electrode port 3 are used for writing data, and the top electrode 210 and the fourth electrode 262 form a read port for data, that is, the first electrode port 1 and the third electrode port 3 are used for reading data. It is used to determine the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal.

[0053] Specifically, a bias voltage is applied between the second electrode port 2 and the third electrode port 3 to form a writing path between the second electrode port 2 and the third electrode port 3. Please refer to Figure 2 , Figure 2 is a graph showing the relationship between the resistance of vanadium dioxide and temperature and light intensity provided by an embodiment of the present invention. Figure 2 In which the ordinate R VO2 represents the resistance of vanadium dioxide. As Figure 2 shown, when there is no external optical and thermal signal input to the phase change device 110 made of vanadium dioxide, the resistance is in a high-resistance state, so the current flowing through the heavy metal layer 250 is relatively small. Please refer to Figure 3 , Figure 3 is a graph showing the change of the resistance state of the magnetic tunnel junction with current provided by an embodiment of the present invention. Figure 3 In which the ordinate R MTJ represents the output signal of the magnetic tunnel junction, and J1 and J2 represent the currents sufficient to flip the magnetic tunnel junction. As Figure 3 shown, the magnitude of this current is between J1 and J2 and is not sufficient to cause the resistance state of the magnetic tunnel junction to flip. At this time, the resistance of the magnetic tunnel junction remains the same high / low resistance state as before. By applying a voltage, a read path is formed between the first electrode port 1 and the third electrode port 3, and the initial resistance state of the tunnel junction resistance can be determined.

[0054] By applying optical excitation or thermal excitation, the phase change device 110 made of vanadium dioxide undergoes a phase change, thereby generating a current sufficient to flip the magnetic tunnel junction. At this time, the junction resistance state between the first electrode port 1 and the third electrode port 3 will switch from the high / low resistance state to the low / high resistance state. Specifically, as Figure 2 shown, when there is an external optical and thermal signal input, the resistance of vanadium dioxide 110 decreases, resulting in an increase in the current flowing through the heavy metal layer 250. When this current exceeds Figure 3 the critical flip current J1 or J2 shown in

[0055] Therefore, by changing the intensities of the applied optical signal and thermal signal, the Boolean logic operation function of the device can be realized. When the intensity of any one of the input optical signal and thermal signal is sufficient to cause a phase change in the phase change device 110 made of vanadium dioxide, that is, any one of the signals will cause the magnetic tunnel junction to flip, at this time, the magnetic storage unit 20 performs a logical OR operation based on the input optical signal and thermal signal. When the intensity of any one of the input optical signal and thermal signal is sufficient to cause a partial phase change in the phase change device 110 made of vanadium dioxide but not sufficient to cause a complete phase change, that is, when the input optical signal and thermal signal are not large enough, only the combined action of the two can cause the magnetic tunnel junction to flip, at this time, the magnetic storage unit 20 performs a logical AND operation based on the input optical signal and thermal signal. The embodiment of the present invention is applied to a power network, and realizes the monitoring and control of signals such as temperature, pressure, optics, and electricity of each node in the power network through functions of perception, storage, and calculation, and realizes the intelligent scheduling and optimization of power equipment and power loads, thereby improving the safety, stability, and reliability of the power system.

[0056] The present invention realizes the acquisition of external optical signals and / or thermal signals through the signal sensing unit 10, realizes the storage of optical signals and / or thermal signals through the magnetic storage unit 20, and realizes Boolean logic operations based on optical signals and thermal signals. The present invention further integrates functions such as perception, storage, and calculation, reduces the time and energy consumption of data transmission and storage, and improves the efficiency of data processing and storage. The present invention provides a multi-functional device integrating sensing, storage, and calculation, which further integrates functions such as perception, storage, and calculation, and breaks through system limitations such as the "memory wall" and "power consumption wall" caused by the separated architecture of von Neumann storage and calculation.

[0057] In other aspects of the embodiment of the present invention, the magnetic tunnel junction includes a free layer 240, a tunneling barrier layer 230, and a reference layer 220 stacked along the direction from the heavy metal layer 250 to the top electrode 210. By applying optical or thermal excitation, a phase change occurs in the phase change device 110 made of vanadium dioxide, thereby generating a current sufficient to flip the magnetic tunnel junction. Among them, the free layer 240 is made of any one or more of iron, cobalt, boron, and nickel. For example, the free layer 240 can be made of iron and boron materials. The reference layer 220 is made of any one or more of iron, cobalt, boron, and nickel. The reference layer 220 can be made of iron and cobalt materials. The materials of the free layer 240 and the reference layer 220 are different. The tunneling barrier layer 230 is made of aluminum oxide and / or magnesium oxide.

[0058] On the other hand, an embodiment of the present invention further provides a chip, including the above-mentioned multifunctional device. For the specific structure of the multifunctional device, please refer to the above embodiment. Since this chip adopts all the technical solutions of the above-mentioned all embodiments, it has at least all the beneficial effects brought by the technical solutions of the above embodiments, which will not be elaborated here one by one.

[0059] Method Embodiment

[0060] On the other hand, please refer to Figure 4 , an embodiment of the present invention further provides a method for controlling a multifunctional device, which is applied to the above-mentioned multifunctional device, and the method includes:

[0061] Step 100: Control the signal sensing unit 10 to receive an optical signal and a thermal signal;

[0062] Step 200: Control the magnetic storage unit 20 to determine the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal.

[0063] Next, the principle of the multifunctional device performing Boolean logic operations of the multifunctional device will be described first.

[0064] First, apply a bias voltage between the second electrode port 2 and the third electrode port 3 to form a writing path between the second electrode port 2 and the third electrode port 3. Please refer to Figure 2 , Figure 2 is a relationship curve graph of the vanadium dioxide resistance with temperature and light intensity provided by an embodiment of the present invention. As Figure 2 shown, when there is no external optical and thermal signal input to the phase change device 110 made of vanadium dioxide, the resistance is in a high-resistance state, so the current flowing through the heavy metal layer 250 is relatively small. Please refer to Figure 3 , Figure 3 is a curve graph of the resistance state of the magnetic tunnel junction changing with current provided by an embodiment of the present invention. As Figure 3 shown, the magnitude of this current is between J1 and J2, which is not sufficient to cause the resistance state of the magnetic tunnel junction to flip. At this time, the resistance of the magnetic tunnel junction remains the same high / low resistance state as before. By applying a voltage, a reading path is formed between the first electrode port 1 and the third electrode port 3, and the initial resistance state of the tunnel junction resistance can be determined.

[0065] Secondly, by applying optical excitation or thermal excitation, the phase change device 110 made of vanadium dioxide undergoes a phase change, thereby generating a current sufficient to flip the magnetic tunnel junction. At this time, the junction resistance state between the first electrode port 1 and the third electrode port 3 will switch from the high / low resistance state to the low / high resistance state. Specifically, as Figure 2 shown, when there is an external optical and thermal signal input, the resistance of the vanadium dioxide 110 will decrease, resulting in an increase in the current flowing through the heavy metal layer 250. When this current exceedsFigure 3 When the critical switching current J1 or J2 shown in the figure is reached, the resistance of the tunnel junction will switch and become a resistance state opposite to the previous one.

[0066] Therefore, by changing the intensity of the applied optical signal and thermal signal, the Boolean logic operation function of the device can be realized. When the intensity of any one of the input optical signal and thermal signal is sufficient to cause a phase change in the phase change device 110 made of vanadium dioxide, that is, any one of the signals will cause the magnetic tunnel junction to switch. At this time, the magnetic storage unit 20 performs a logical OR operation based on the input optical signal and thermal signal. When the intensity of any one of the input optical signal and thermal signal is sufficient to cause a partial phase change in the phase change device 110 made of vanadium dioxide but not sufficient to cause a complete phase change, that is, when the input optical signal and thermal signal are not large enough, only the combined action of the two can cause the magnetic tunnel junction to switch. At this time, the magnetic storage unit 20 performs a logical AND operation based on the input optical signal and thermal signal.

[0067] The present invention realizes the acquisition of external optical signals and / or thermal signals through the signal sensing unit 10, realizes the storage of optical signals and / or thermal signals through the magnetic storage unit 20, and realizes Boolean logic operations based on optical signals and thermal signals. The present invention further integrates functions such as sensing, storage, and calculation, reduces the time and energy consumption of data transmission and storage, and improves the efficiency of data processing and storage.

[0068] In other aspects of the embodiments of the present invention, the type of the optical signal includes a first optical signal that causes a partial phase change in the phase change device 110, and the thermal signal includes a first thermal signal that causes a partial phase change in the phase change device 110. Step 200, controlling the magnetic storage unit 20 to determine the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal, includes: controlling the magnetic storage unit 20 to determine to perform a logical AND operation based on the first optical signal and the first thermal signal.

[0069] As Figure 5 shown, Figure 5 It represents a schematic diagram of the resistance of vanadium dioxide changing with temperature and light intensity and the output truth table of the magnetic tunnel junction. When the intensities of the input optical signal and thermal signal are weak, that is, when the optical signal is the first optical signal that causes a partial phase change in the phase change device 110 and the thermal signal is the first thermal signal that causes a partial phase change in the phase change device 110, for example Figure 5 the first optical signal I1 and the first thermal signal T1 in, when they act alone, they can only reduce the resistance of vanadium dioxide by a part. At this time, although the current flowing through the heavy metal layer 250 will increase, it cannot reach Figure 3 the critical switching current J1 or J2 in, so the resistance state of the tunnel junction will not change. When the two act simultaneously, the resistance of vanadium dioxide will be greatly reduced. At this time, the current flowing through the heavy metal layer 250 will exceedFigure 3 Among the critical switching currents J1 or J2, the resistance state of the tunnel junction will flip, and the input signals I1 and T1 and the output signal R MTJ The logical relationship between them can be represented by Figure 5 The truth table on the left side in represents, which conforms to the "AND" logic.

[0070] Specifically, in the embodiments of the present invention, it is stipulated that when there is no input of the first optical signal I1, it is 0, and when there is an input, it is 1. When there is no input of the first thermal signal T1, it is 0, and when there is an input, it is 1. The resistance state of the magnetic tunnel junction before flipping is 0, and the resistance state after flipping is 1. When there is no input of the first optical signal I1 and no input of the first thermal signal T1, at this time, the resistance of vanadium dioxide will not decrease by a part, and the current flowing through the heavy metal layer 250 will not increase, and it cannot reach Figure 3 Among the critical switching currents J1 or J2, so the resistance state of the tunnel junction will not change. When there is exactly one input signal among the first optical signal I1 and the first thermal signal T1, it will cause the resistance of vanadium dioxide to decrease by a part. At this time, although the current flowing through the heavy metal layer 250 will increase, it cannot reach Figure 3 Among the critical switching currents J1 or J2, so the resistance state of the tunnel junction will not change. Only when there are input signals for both the first optical signal I1 and the first thermal signal T1, the resistance of vanadium dioxide will be greatly reduced. At this time, the current flowing through the heavy metal layer 250 will exceed Figure 3 Among the critical switching currents J1 or J2, and the resistance state of the tunnel junction will flip.

[0071] In other aspects of the embodiments of the present invention, the type of the optical signal includes a second optical signal that causes the phase change device 110 to undergo a complete phase change, and the thermal signal includes a second thermal signal that causes the phase change device 110 to undergo a complete phase change. Step 200, controlling the magnetic storage unit 20 to determine the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal, includes: controlling the magnetic storage unit 20 to determine to perform a logical OR operation based on the second optical signal and the second thermal signal.

[0072] When the intensities of the input optical signal and thermal signal are relatively strong, such as Figure 5 The second optical signal I2 and the second thermal signal T2 in. As long as at least one signal has an input, it can cause the resistance of vanadium dioxide to be reduced to the low-resistance state, and the current flowing through the heavy metal layer 250 can also reach Figure 3 Among the critical switching currents J1 or J2, and the resistance state of the tunnel junction will also flip accordingly. The input second optical signal I2 and the second thermal signal T2 and the output signal R MTJ The logical relationship between them can be represented by Figure 5 The truth table on the right side in represents, which conforms to the "OR" logic.

[0073] Specifically, in the embodiments of the present invention, it is stipulated that when there is no input of the second optical signal I2, it is 0, and when there is an input, it is 1. When there is no input of the second thermal signal T2, it is 0, and when there is an input, it is 1. The resistance state of the magnetic tunnel junction before flipping is 0, and the resistance state after flipping is 1. When there is no input of the second optical signal I2 and no input of the second thermal signal T2, at this time, the resistance of vanadium dioxide will not decrease partially, and the current flowing through the heavy metal layer 250 will not increase, and it is impossible to reach Figure 3 the critical switching current J1 or J2 in Figure 3 , so the resistance state of the tunnel junction will not change. When at least one of the second optical signal I2 and the second thermal signal T2 has an input, the resistance of vanadium dioxide will decrease significantly. At this time, the current flowing through the heavy metal layer 250 will exceed

[0074] the critical switching current J1 or J2 in

[0075] Device embodiments

[0076] Please refer to Figure 6 , on the other hand, the embodiments of the present invention also provide a multifunctional device control device, including:

[0077] A first control module 601, configured to control the signal sensing unit to receive optical signals and thermal signals;

[0078] A second control module 602, configured to control the magnetic storage unit to determine the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal.

[0079] Optionally, the type of the optical signal includes a first optical signal that causes a partial phase change of the phase change device, and the thermal signal includes a first thermal signal that causes a partial phase change of the phase change device;

[0080] The control of the magnetic storage unit to determine the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal includes:

[0081] Controlling the magnetic storage unit to determine to perform a logical AND operation based on the first optical signal and the first thermal signal.

[0082] Optionally, the type of the optical signal includes a second optical signal that causes a complete phase change of the phase change device, and the thermal signal includes a second thermal signal that causes a complete phase change of the phase change device;

[0083] The control magnetic storage unit determines the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal, including:

[0084] The control magnetic storage unit determines to perform a logical OR operation based on the second optical signal and the second thermal signal.

[0085] The multi-functional device control device includes a processor and a memory. The first control module 601, the second control module 602, etc. are all stored in the memory as program units, and the corresponding functions are implemented by the processor executing the program units stored in the memory.

[0086] The processor contains a kernel, and the kernel retrieves the corresponding program unit from the memory. One or more kernels can be set.

[0087] The memory may include non-permanent memory in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of, for example, read-only memory (ROM) or flash memory (flash RAM). The memory includes at least one memory chip.

[0088] On the other hand, the present invention also provides a computer program product. The computer program product includes a computer program that can be stored on a machine-readable storage medium. When the computer program is executed by a processor, the computer can execute the multi-functional device control method, which includes: controlling the signal sensing unit to receive an optical signal and a thermal signal; controlling the control magnetic storage unit to determine the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal.

[0089] On another aspect, the present invention also provides a machine-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, it realizes the execution of the multi-functional device control method, which includes: controlling the signal sensing unit to receive an optical signal and a thermal signal; controlling the control magnetic storage unit to determine the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal.

[0090] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separated. The components shown as units may or may not be physical units, that is, they may be located in one place or distributed to multiple network units. Some or all of the modules can be selected according to actual needs to achieve the purpose of the solution of this embodiment. A person of ordinary skill in the art can understand and implement it without creative labor.

[0091] Through the description of the above embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus a necessary general hardware platform, and of course, it can also be implemented by hardware. Based on such an understanding, the essence of the above technical solution, or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods described in each embodiment or some parts of the embodiments.

[0092] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A multifunctional device, characterized in that, Comprising: A signal sensing unit for collecting external optical signals and / or thermal signals, the signal sensing unit comprising a phase change device, a first electrode connected to a first side of the phase change device, and a second electrode connected to a second side of the phase change device; A magnetic storage unit for storing the optical signal and / or the thermal signal, the magnetic storage unit comprising a heavy metal layer, a magnetic tunnel junction, and a top electrode stacked in sequence; Wherein, a third electrode is provided on a first side of the heavy metal layer, a fourth electrode is provided on a second side of the heavy metal layer, the third electrode is electrically connected to the second electrode, and the top electrode and the fourth electrode form a readout port for data, for determining the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal.

2. The multifunctional device according to claim 1, characterized in that, The magnetic tunnel junction comprises a free layer, a tunneling barrier layer, and a reference layer stacked in sequence from the heavy metal layer towards the top electrode.

3. The multifunctional device according to claim 1, characterized in that, The phase change device is made of any one of vanadium oxide and tin indium oxide.

4. The multifunctional device according to claim 2, characterized in that, The free layer is made of any one or more of iron, cobalt, boron, and nickel, and the reference layer is made of any one or more of iron, cobalt, boron, and nickel, wherein the materials of the free layer and the reference layer are different.

5. The multifunctional device according to claim 2, characterized in that, The tunneling barrier layer is made of alumina and / or magnesia.

6. A chip, characterized in that, Comprising the multifunctional device according to any one of claims 1 to 5.

7. A method for controlling a multifunctional device, characterized in that, Applied to the multifunctional device according to any one of claims 1 to 5, the method comprising: Controlling the signal sensing unit to receive optical signals and thermal signals; Controlling the magnetic storage unit to determine the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal.

8. The multifunctional device control method according to claim 7, characterized in that, The type of the optical signal includes a first optical signal that causes partial phase change of the phase change device, and the thermal signal includes a first thermal signal that causes partial phase change of the phase change device; The controlling the magnetic storage unit to determine the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal includes: Controlling the magnetic storage unit to determine to perform a logical AND operation based on the first optical signal and the first thermal signal.

9. The multifunctional device control method according to claim 7, characterized in that, The type of the optical signal includes a second optical signal that causes complete phase change of the phase change device, and the thermal signal includes a second thermal signal that causes complete phase change of the phase change device; The controlling the magnetic storage unit to determine the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal includes: Controlling the magnetic storage unit to determine to perform a logical OR operation based on the second optical signal and the second thermal signal.

10. A multi-functional device control apparatus, characterized in that, Comprising: A first control module for controlling the signal sensing unit to receive optical signals and thermal signals; A second control module for controlling the magnetic storage unit to determine the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal.

11. The multifunctional device control apparatus according to claim 10, characterized in that, The type of the optical signal includes a first optical signal that causes partial phase change of the phase change device, and the thermal signal includes a first thermal signal that causes partial phase change of the phase change device; The controlling the magnetic storage unit to determine the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal includes: The control magnetic storage unit determines to perform a logical AND operation based on the first optical signal and the first thermal signal.

12. The multifunctional device control apparatus according to claim 10, wherein The type of the optical signal includes a second optical signal that causes a complete phase change in the phase change device, and the thermal signal includes a second thermal signal that causes a complete phase change in the phase change device; The control magnetic storage unit determines the type of Boolean logic operation to be performed based on the type of the optical signal and the type of the thermal signal, including: The control magnetic storage unit determines to perform a logical OR operation based on the second optical signal and the second thermal signal.

13. A machine-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the multi-functional device control method according to any one of claims 7 to 9.

14. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by a processor, it implements the multi-functional device control method according to any one of claims 7 to 9.

Images