Laser heat treatment method of substrate structural body and preparation method of electronic device using laser heat treatment method

Abstract

Disclosed are a laser heat treatment method for a substrate structure and a method for manufacturing an electronic device using the same. The disclosed laser heat treatment method for a substrate structure performs heat treatment by sequentially irradiating a plurality of regions on one surface of the substrate structure with laser light, the irradiation of the laser light to the substrate structure being capable of being performed in units of laser irradiation regions. The laser heat treatment method may include the steps of: performing an nth laser heat treatment on the substrate structure; and performing an (n + 1) th laser heat treatment on the substrate structure, the nth laser heat treatment being performed in a first region of the substrate structure, and the (n + 1) th laser heat treatment being performed in a second region of the substrate structure, the first region and the second region may be spaced apart from each other in any one of a first direction, a second direction perpendicular to the first direction, and a third direction between the first direction and the second direction. An interval between the first region and the second region may be about 90% or more of a width of the unit laser irradiation region in either the first direction or the second direction.

Description

Technical Field

[0001] The present invention relates to a heat treatment method for an object to be processed and a device manufacturing method using the same. More specifically, the present invention relates to a laser heat treatment method for a substrate structure and an electronic device manufacturing method using the same. Background Art

[0002] Generally, semiconductor devices / electronic devices can be manufactured through multiple processes. For example, the processes for manufacturing semiconductor devices / electronic devices may include a thin film evaporation process, a photolithography process, an etching process, an ion implantation process, a heat treatment (i.e., annealing) process, etc. Among them, the heat treatment process is a process of improving and ensuring device characteristics by stabilizing, activating, melting, or removing seam defects in a film by heating a substrate or a film formed on the substrate. The heat treatment (annealing) process may include a laser heat treatment process, a rapid thermal process (RTP), etc.

[0003] The advantage of the laser heat treatment process is that the heat treatment can be mainly performed only on the surface portion of the substrate using a laser, with less impact on other processes. This can not only reduce heat loss but also make it easier to raise the temperature and control it. However, as the integration degree of semiconductor devices / electronic devices increases and the size of each device continues to shrink, during the laser heat treatment process, temperature non-uniformity occurring in the substrate may cause various problems in device manufacturing characteristics. Summary of the Invention

[0004] Technical Problem

[0005] The technical objective to be achieved by the present invention is to provide a laser heat treatment method as follows, that is, during the heat treatment using a laser, the problem of temperature non-uniformity that may occur in the substrate structure can be prevented or minimized.

[0006] Moreover, the technical objective achieved by the present invention is to provide an electronic device (semiconductor device) manufacturing method using the above laser heat treatment method.

[0007] The objective to be achieved by the present invention is not limited to the above-mentioned objectives. Those of ordinary skill in the technical field to which the present invention belongs can understand other objectives not mentioned through the following description.

[0008] Technical Solution

[0009] A laser heat treatment method for a substrate structure provided by an embodiment of the present invention performs heat treatment by sequentially irradiating a plurality of regions on one surface of the substrate structure with laser light. The irradiation of the laser light on the substrate structure is performed in units of unit laser irradiation regions. The laser heat treatment method includes the following steps: performing an n-th laser heat treatment on the substrate structure; and performing an (n + 1)-th laser heat treatment on the substrate structure. The n-th laser heat treatment is performed in a first region of the substrate structure, and the (n + 1)-th laser heat treatment is performed in a second region of the substrate structure. The first region and the second region are separated from each other along any one of a first direction, a second direction perpendicular to the first direction, and a third direction between the first direction and the second direction. The interval between the first region and the second region is 90% or more of the width of the unit laser irradiation region in any one of the first direction and the second direction.

[0010] The laser heat treatment method can be performed in a stepper manner.

[0011] The unit laser irradiation region can be an exposure (shot) region where laser light is simultaneously irradiated at one time.

[0012] When the first region and the second region are separated from each other along any one of the first direction and the second direction, the interval between the first region and the second region is N times the width of the unit laser irradiation region in any one of the first direction and the second direction, where N can be an integer greater than or equal to 1.

[0013] When the first region and the second region are separated from each other along the third direction, the interval between the first region and the second region can be N times (where N is an integer greater than or equal to 1) the width of the unit laser irradiation region in any one of the first direction and the second direction or a distance greater than or equal to the diagonal length of the unit laser irradiation region.

[0014] The laser heat treatment method can include the following steps: performing an (n + m)-th laser heat treatment on the substrate structure (where m is an integer greater than 2). The (n + m)-th laser heat treatment can be performed in a third region of the substrate structure, and the third region can be located between the first region and the second region.

[0015] The laser heat treatment method can be performed on the entire effective region of the one surface of the substrate structure.

[0016] The substrate structure may include a semiconductor film or an insulator film, and the heat treatment using the laser can change the crystallinity, physical properties, or film quality of the semiconductor film or insulator film.

[0017] The substrate structure may include a wafer.

[0018] The laser may include one of ultraviolet rays (e.g., EUV, DUV, UV), visible rays, infrared rays (IR), and microwaves.

[0019] Before performing the heat treatment using the laser, the initial temperature of the substrate structure may be about 550 °C or lower, and the heating temperature at which the corresponding area of the substrate structure is irradiated with the laser may be in the range of about 650 °C to 3000 °C.

[0020] A method for manufacturing an electronic device according to another embodiment of the present invention includes the following steps: performing heat treatment on a substrate structure using the laser heat treatment method; and forming an electronic device using the heat-treated substrate structure.

[0021] Effects of the Invention

[0022] Embodiments of the present invention can implement the following laser heat treatment method, that is, during the heat treatment using the laser, it is possible to prevent or minimize the problem of temperature non-uniformity that may occur in the substrate structure. In particular, according to one embodiment, in a laser heat treatment process using a stepper method, it is possible to prevent or minimize the problem of temperature non-uniformity in the substrate structure during the exposure (shot) of irradiating the laser.

[0023] When applying the laser heat treatment method of the embodiments of the present invention, an electronic device (semiconductor device) having excellent performance and uniformity can be manufactured.

[0024] However, the effects of the present invention are not limited to the above-described effects, and various expansions can be made without departing from the technical idea and scope of the present invention. Description of the Drawings

[0025] Figure 1 A top view for explaining the laser heat treatment method of the substrate structure according to an embodiment of the present invention.

[0026] Figure 2 For explaining Figure 1 A top view for explaining the laser heat treatment method of the embodiment of the present invention related to

[0027] Figure 3 A top view for explaining the laser heat treatment method of the substrate structure according to another embodiment of the present invention.

[0028] Figure 4 is a top view for illustrating the laser heat treatment method of an embodiment of the present invention related to Figure 3 the relevant

[0029] Figure 5 is a top view for illustrating the laser heat treatment method of a substrate structure of another embodiment of the present invention.

[0030] Figure 6 is a top view for illustrating the laser heat treatment method of an embodiment of the present invention related to Figure 5 the relevant

[0031] Figures 7a to 7d is a top view for illustrating the laser heat treatment method of a substrate structure of an exemplary embodiment of the present invention.

[0032] Figures 8a to 8c is a top view for illustrating the laser heat treatment method of a comparative example.

[0033] Figure 9 is an evaluation curve graph for illustrating the problems of the laser heat treatment method of a comparative example.

[0034] Figure 10 is a perspective view of a method for manufacturing an electronic device for illustrating the laser heat treatment method of an application substrate structure of an embodiment of the present invention. Detailed Description of the Invention

[0035] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0036] The embodiments of the present invention described below are provided to further clarify the present invention for those of ordinary skill in the technical field to which the present invention pertains. The scope of the present invention is not limited to the following embodiments, and the following embodiments can be implemented in various different embodiments.

[0037] In this specification, the terms used are for describing specific embodiments and do not limit the present invention. In this specification, unless otherwise clearly specified in the context, the singular form of a term may include the plural form. Also, in this specification, the terms "comprise" and / or "comprising" are used to specify the presence of the recited shapes, steps, numbers, operations, components, elements, and / or combinations thereof, and do not exclude the presence or addition of one or more other shapes, steps, numbers, operations, components, elements, and / or combinations thereof. Also, in this specification, the term "connected" not only means the meaning that a certain component is directly connected, but also includes the concept that components are indirectly connected via other components.

[0038] Moreover, in this specification, when it is stated that a certain component is "on" another component, unless the certain component is in contact with the other component, it may also include the case where there are other components between the two components. In this specification, the term "and / or" includes all combinations of one or more of the corresponding listed items. Also, in this specification, terms indicating a degree such as "about" and "substantially" are used to represent a range of that numerical value or degree or a meaning close thereto in consideration of inherent preparation and material allowable errors, and are used to help understand the exact value or absolute value provided by the present invention to prevent infringers from improperly using the disclosed content mentioned.

[0039] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. To ensure the clarity and convenience of the description in the specification, in the regions or parts shown in the drawings, the dimensions or thicknesses may be slightly exaggerated. Throughout the detailed description, the same reference numerals denote the same structural elements.

[0040] Figure 1 It is a top view for explaining a laser heat treatment method of a substrate structure according to an embodiment of the present invention.

[0041] Referring to Figure 1 , the laser heat treatment method of the substrate structure according to the embodiment of the present invention is a laser heat treatment method (i.e., laser annealing method) in which laser is sequentially irradiated to a plurality of regions on one surface of a specified substrate structure S10 to perform heat treatment (i.e., annealing). The substrate structure S10 includes a semiconductor substrate or an insulating substrate, and may also include a conductive substrate according to circumstances. Also, the substrate structure S10 may further include a specified thin film formed on the substrate (base substrate) or a device portion including the thin film. As a non-limiting example, the semiconductor substrate may include at least one of various semiconductor materials composed of Si, Ge, SiGe, SiC, GaN, GaAs, etc. The thin film may include at least one of a semiconductor thin film, an insulator thin film, and a conductive thin film. The semiconductor thin film may include various semiconductor materials including amorphous silicon, polycrystalline silicon, etc. The insulator thin film may include high dielectric constant (high-k) materials having a dielectric constant higher than that of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride, etc. For example, the conductive thin film may include at least one of a metal and a metal compound. As a non-limiting example, the device portion may include switching elements such as transistors or diodes, or storage nodes, or storage elements such as capacitors and resistance change layers. Also, the substrate structure S10 may include a wafer or have a wafer form.

[0042] When the substrate structure S10 includes a semiconductor film (semiconductor thin film) or an insulator film (insulator thin film), the heat treatment using the laser can change the crystallinity, physical properties, or film quality of the semiconductor film or insulator film. As a non-limiting example, the heat treatment using the laser is used for the crystallization of amorphous silicon, or for removing curves such as seams in the thin film, or for the activation of doping regions, or can be used for the stabilization of the substrate and the thin film. In addition, the heat treatment using the laser can be used for various purposes.

[0043] In Figure 1 the example shown, the plurality of regions divided by the dotted grid on one surface of the substrate structure S10 are the regions where the laser is irradiated. The irradiation of the laser on the substrate structure S10 can be achieved in units of "unit laser irradiation regions". In Figure 1 it, one grid region (quadrilateral region) formed by the dotted line can correspond to the unit laser irradiation region. The laser heat treatment method can be performed in a stepper manner, and the unit laser irradiation region can be the exposure (shot) region where the laser is simultaneously irradiated at one time. For example, the unit laser irradiation region can be quadrilateral or have a shape approximately quadrilateral. As the laser is sequentially irradiated on the plurality of regions on one surface of the substrate structure S10 in units of the unit laser irradiation region, heat treatment (i.e., annealing) can be performed on the entire effective region of the one surface.

[0044] The laser heat treatment method may include the step of performing the n-th laser heat treatment on the substrate structure S10 and the step of performing the (n + 1)-th laser heat treatment on the substrate structure S10. The n-th laser heat treatment may be performed in the first region 10 of the substrate structure S10, and the (n + 1)-th laser heat treatment may be performed in the second region 20 of the substrate structure S10. Here, n is an integer of 1 or more. The first region 10 and the second region 20 may be separated from each other in any one of a first direction (e.g., the X-axis direction in the drawing), a second direction perpendicular to the first direction (e.g., the Y-axis direction in the drawing), and a third direction between the first direction and the second direction. The interval d1 between the first region 10 and the second region 20 may be equivalent to a distance of about 90% or more of the width of the unit laser irradiation region (e.g., the exposure region) in any one of the first direction (X-axis direction) and the second direction (Y-axis direction). The interval d1 between the first region 10 and the second region 20 may be about 90% or more of the width of the unit laser irradiation region (e.g., the exposure region) in any one of the first direction (X-axis direction) and the second direction (Y-axis direction). As a non-limiting example, it may be about 2000% or less. However, depending on the situation, it may also be about 2000% or more. Here, the "interval" refers to the minimum interval (minimum distance). This also applies equally to other parts of this specification. In the laser heat treatment method of the embodiment of the present invention, the n-th laser heat treatment and the (n + 1)-th laser heat treatment may be performed with a predetermined interval.

[0045] In Figure 1 the embodiment, the first region 10 and the second region 20 are separated from each other in the first direction (X-axis direction), and the interval d1 between the first region 10 and the second region 20 is about 90% or more of the width of the unit laser irradiation region (e.g., the exposure region) in the first direction (X-axis direction). For example, the width of the unit laser irradiation region in the first direction (X-axis direction) may be about several millimeters (mm) to several tens of millimeters (mm), and the width in the second direction (Y-axis direction) may be about several millimeters (mm) to several tens of millimeters (mm).

[0046] When the first region 10 and the second region 20 are separated from each other in any one of the first direction (X-axis direction) and the second direction (Y-axis direction), the interval d1 between the first region 10 and the second region 20 may be N times the width of the unit laser irradiation region in any one of the first direction (X-axis direction) and the second direction (Y-axis direction), where N may be an integer of 1 or more. In Figure 1In [description], the first region 10 and the second region 20 are separated from each other along the first direction (X-axis direction), and the interval d1 between the first region 10 and the second region 20 is equivalent to a distance of 1 times the width of the unit laser irradiation region in the first direction (X-axis direction). However, the interval can also be 2 times (two grid distances) or more, rather than 1 time (one grid distance).

[0047] As described above, since the nth laser heat treatment and the (n + 1)th laser heat treatment can be performed with a prescribed interval, temperature non-uniformity of the substrate structure S10 can be prevented and minimized in each laser heat treatment step.

[0048] Figure 2 For explaining Figure 1 a top view of the laser heat treatment method according to an embodiment of the present invention related to

[0049] Referring to Figure 2 , the laser heat treatment method according to an embodiment of the present invention may further include a step of performing the (n + m)th laser heat treatment on the substrate structure S10. Here, m can be an integer greater than 2. Or, m can be an integer greater than about 5. The (n + m)th laser heat treatment can be performed in the third region 30 of the substrate structure S10, and the third region 30 can be located between the first region 10 and the second region 20. After performing laser heat treatments on two separated regions 10 and 20 respectively and after a prescribed time, the laser heat treatment can be performed on the third region 30 between the first region 10 and the second region 20. The third region 30 can be adjacent to at least one of the first region 10 and the second region 20.

[0050] Since the laser heat treatment of the third region 30 is performed after performing laser heat treatments on the first region 10 and the second region 20 and after a prescribed time, the temperature change of the substrate structure S10 generated during the laser heat treatment of the first region 10 and the second region 20 can be prevented from affecting the laser heat treatment of the third region 30.

[0051] Figure 3 A top view for explaining the laser heat treatment method of the substrate structure according to another embodiment of the present invention.

[0052] Referring to Figure 3 , the laser heat treatment method according to an embodiment of the present invention may include a step of performing the nth laser heat treatment on the substrate structure S10 and a step of performing the (n + 1)th laser heat treatment on the substrate structure S10. The nth laser heat treatment can be performed in the first region 10 of the substrate structure S10, and the (n + 1)th laser heat treatment can be performed in the second region 21 of the substrate structure S10.

[0053] In this embodiment, the first region 11 and the second region 21 are separated from each other along the second direction (Y-axis direction), and the interval d2 between the first region 11 and the second region 21 is more than about 90% of the width of the unit laser irradiation region (e.g., exposure region) in the second direction (Y-axis direction). For example, when the first region 11 and the second region 21 are separated from each other along the second direction (Y-axis direction), the interval d2 between the first region 11 and the second region 21 can be N times the width of the unit laser irradiation region in the second direction (Y-axis direction), where N can be an integer of 1 or more. In Figure 3 the interval d2 between the first region 11 and the second region 21 corresponds to 1 times the width of the unit laser irradiation region in the second direction (Y-axis direction). However, the interval can also be 2 times (two grid distances) or more, rather than 1 time (one grid distance). As described above, since the nth laser heat treatment and the (n + 1)th laser heat treatment can be performed with a predetermined interval, temperature non-uniformity of the substrate structure S10 can be prevented and minimized in each laser heat treatment step.

[0054] Figure 4 For explaining Figure 3 a top view of the laser heat treatment method according to an embodiment of the present invention related thereto.

[0055] Referring to Figure 4 , the laser heat treatment method according to an embodiment of the present invention may further include a step of performing the (n + m)th laser heat treatment on the substrate structure S10. Wherein, m can be an integer greater than 2. Or, m can be an integer greater than about 5. The (n + m)th laser heat treatment can be performed in the third region 31 of the substrate structure S10, and the third region 31 can be located between the first region 11 and the second region 21. After performing laser heat treatments on two separated regions 11 and 21 respectively and after a predetermined time, the laser heat treatment of the third region 31 between the first region 11 and the second region 21 can be performed. The third region 31 can be adjacently arranged with at least one of the first region 11 and the second region 21.

[0056] Since the laser heat treatment of the third region 31 is performed after performing laser heat treatments on the first region 11 and the second region 21 and after a predetermined time, the temperature change of the substrate structure S10 generated when performing laser heat treatments on the first region 11 and the second region 21 can be prevented from affecting the laser heat treatment of the third region 31.

[0057] Figure 5 A top view for explaining the laser heat treatment method of the substrate structure according to another embodiment of the present invention.

[0058] Referring toFigure 5 In the laser heat treatment method according to an embodiment of the present invention, the steps of performing the n-th laser heat treatment on the substrate structure S10 and the steps of performing the (n + 1)-th laser heat treatment on the substrate structure S10 may be included. The n-th laser heat treatment may be performed in the first region 12 of the substrate structure S10, and the (n + 1)-th laser heat treatment may be performed in the second region 22 of the substrate structure S10.

[0059] In the present embodiment, the first region 12 and the second region 22 are separated from each other along a third direction between the first direction (X-axis direction) and the second direction (Y-axis direction). The interval d3 between the first region 12 and the second region 22 is about 90% or more of the width of the unit laser irradiation region (for example, the exposure region) in either the first direction (X-axis direction) or the second direction (Y-axis direction).

[0060] For example, when the first region 12 and the second region 22 are separated from each other along the third direction, the interval d3 between the first region 12 and the second region 22 corresponds to N times (where N is an integer of 1 or more) the width of the unit laser irradiation region (for example, the exposure region) in either the first direction (X-axis direction) or the second direction (Y-axis direction), or may have a distance equal to or greater than the diagonal length of the unit laser irradiation region. In Figure 5 In, the interval d3 between the first region 12 and the second region 22 corresponds to the diagonal length distance of the unit laser irradiation region. However, the interval may also be 2 times or more of the diagonal length, rather than 1 time. And the third direction may be other inclined directions rather than the exact diagonal direction. In this case, the interval between the first region 12 and the second region 22 may correspond to N times (where N is an integer of 1 or more) the width of the unit laser irradiation region in either the first direction (X-axis direction) or the second direction (Y-axis direction).

[0061] As described above, since the n-th laser heat treatment and the (n + 1)-th laser heat treatment are performed with a predetermined interval, temperature non-uniformity of the substrate structure S10 can be prevented and minimized in each laser heat treatment step.

[0062] Figure 6 For explaining Figure 5 A top view of the laser heat treatment method according to an embodiment of the present invention related to

[0063] Refer to Figure 6, the laser heat treatment method of the embodiment of the present invention may further include the step of performing the n+mth laser heat treatment on the substrate structure S10. Wherein, the m may be an integer greater than 2. Alternatively, the m may be an integer greater than about 5. The n+mth laser heat treatment may be performed on the third region 32 of the substrate structure S10, and the third region 32 may be located between the first region 12 and the second region 22. After laser heat treatment is performed on the two regions 12 and 22 separated from each other and a prescribed time has passed, laser heat treatment may be performed on the third region 32 between the first region 12 and the second region 22. The third region 32 may be disposed adjacent to at least one of the first region 12 and the second region 22.

[0064] Since laser heat treatment is performed on the first region 12 and the second region 22 and laser heat treatment is performed on the third region 32 after a specified time, the temperature change of the substrate structure S10 generated when laser heat treatment is performed on the first region 12 and the second region 22 can be prevented from affecting the laser heat treatment of the third region 32.

[0065] Figures 7a to 7d FIG. 4 is a top view for explaining a laser heat treatment method for a substrate structure according to an exemplary embodiment of the present invention.

[0066] Reference Figure 7a , laser can be irradiated to any area of the substrate structure S10 to perform heat treatment. Any area can be an area corresponding to the unit laser irradiation area (for example, exposure area). As an example, in the accompanying drawings, the first laser exposure (shot) can be performed on the upper edge portion or the lower edge portion of the substrate structure S10. Then, the second laser exposure (Shot) can be performed after moving the width of the unit laser irradiation area N times (where N is an integer greater than 1). Therefore, the interval between the area (unit area) where the nth laser heat treatment is performed and the area (unit area) where the n+1th laser heat treatment is performed can be equivalent to N times the width of the unit laser irradiation area (for example, exposure area) (where N is an integer greater than 1).

[0067] Among them, in the attached figure of the substrate structure S10, the first laser heat treatment is performed on the left edge area of the lower part, and the laser heat treatment is performed sequentially while moving approximately across a grid (i.e., an exposure area). As shown in the figure, as the movement is performed in a zigzag manner, in the attached figure of the substrate structure S10, the laser heat treatment can be performed to the upper area. The area shown in light red indicates the area where the laser heat treatment is performed. For example, the movement of the laser irradiation area can be performed by moving the stage loaded with the substrate structure S10. The position movement of the platform can be very precise and accurate.

[0068] Reference Figure 7b, can be Figure 7a Part of the area where the laser heat treatment was not performed was sequentially subjected to laser heat treatment. Figure 7a In a similar manner to the description, laser heat treatment can be performed sequentially while moving approximately one grid (i.e., one exposure area). As shown in the figure, as the movement is performed in a zigzag manner, the laser heat treatment can be performed from the upper area to the lower area in the drawing of the substrate structure S10. The area shown in light blue indicates the area where the laser heat treatment is performed.

[0069] Reference Figure 7c , can be Figure 7a and Figure 7b Part of the area where the laser heat treatment was not performed was sequentially subjected to laser heat treatment. Figure 7a In a similar manner to the description, laser heat treatment can be performed sequentially while moving approximately one grid (i.e., one exposure area). As shown in the figure, as the movement is performed in a zigzag manner, the laser heat treatment can be performed from the lower area to the upper area in the drawing of the substrate structure S10. The area shown in light purple indicates the area where the laser heat treatment is performed.

[0070] Reference Figure 7d , can be Figure 7a and Figure 7c The areas that have not been subjected to laser heat treatment are subjected to laser heat treatment in turn. Figure 7a In a similar manner to the above, laser heat treatment can be performed sequentially while moving approximately one grid (i.e., one exposure area). As shown in the figure, as the movement is performed in a zigzag manner, laser heat treatment can be performed from the upper area to the lower area in the drawing of the substrate structure S10. The area shown in orange indicates the area where laser heat treatment is performed. In essence, Figure 7d Regions shown in light red, light blue, light purple, and orange may be regions that have undergone the same heat treatment.

[0071] exist Figures 7a to 7d In the embodiment of FIG. 1 , although the laser heat treatment is sequentially performed while moving approximately one grid (i.e., one exposure area), this is only an example, and the interval between the nth laser heat treatment area and the n+1th laser heat treatment area may be more than one grid. In addition, the starting point, execution direction (movement direction), and path of the laser heat treatment may be varied in many ways.

[0072] According to an embodiment of the present invention, as the interval between the n-th laser heat treatment region and the (n + 1)-th laser heat treatment region is ensured to be a specified distance or more, in the case where the laser heat treatment process is sequentially performed, heat treatment can be performed on all the plurality of regions of the substrate structure S10 under the same temperature conditions. For example, in the case where the n-th laser heat treatment region and the (n + 1)-th laser heat treatment region are in contact with each other, if heat treatment is performed on the n-th laser heat treatment region, the substrate temperature conditions of its adjacent regions will change. Therefore, it may cause the n-th laser heat treatment region and the (n + 1)-th laser heat treatment region to be heat treated under different temperature conditions. Also, it may cause a temperature deviation in the (n + 1)-th laser heat treatment region. As a result, such temperature non-uniformity can cause non-uniformity of device characteristics and characteristic degradation. However, the embodiments of the present invention can prevent and minimize such problems of temperature non-uniformity, and can fabricate electronic devices (semiconductor devices) with excellent performance and uniformity.

[0073] For example, the laser used in the embodiments of the present invention can be one of ultraviolet rays (e.g., EUV, DUV, UV), visible rays, infrared rays (IR), and microwaves. For example, the wavelength of the laser can be about 0.02 μm to about 11 μm. However, the specific type and wavelength range of the laser are only examples and can vary according to circumstances. Also, in the embodiments of the present invention, before performing heat treatment using the laser, for example, the initial temperature of the substrate structure S10 can be about 550 °C or less. For example, the heating temperature at which the corresponding region (laser irradiation region) of the substrate structure S10 is irradiated with the laser can be in the range of about 650 °C to 3000 °C. Also, in the embodiments of the present invention, for example, the time interval between the n-th laser heat treatment step and the (n + 1)-th laser heat treatment step can be about 0.2 seconds to about 2 seconds. More preferably, the time interval between the n-th laser heat treatment step and the (n + 1)-th laser heat treatment step can be about 0.3 seconds to about 1.5 seconds. However, the temperature adjustment and time conditions are only examples and can also vary according to circumstances.

[0074] Figures 8a to 8c A top view for explaining the laser heat treatment method of the comparative example.

[0075] Refer to Figures 8a to 8c, according to the laser heat treatment method of the comparative example, after performing the first laser heat treatment (i.e., laser exposure) on a region (the first region) of the substrate structure S1, it can be moved to a second region adjacent to the first region and perform the laser heat treatment (i.e., laser exposure) on the second region. As it moves to the next region adjacent to the previous laser heat treatment region, the laser heat treatment can be performed on the entire region of the substrate structure S1. In the drawings, the laser heat treatment can be performed by repeatedly moving and aligning starting from the lower left edge of the substrate structure S1. As described above, when the nth laser heat treatment region and the (n + 1)th laser heat treatment region are adjacent to each other, if the heat treatment is performed on the nth laser heat treatment region, the substrate temperature conditions in the adjacent region will change. Therefore, it may result in the nth laser heat treatment region and the (n + 1)th laser heat treatment region not being heat treated under the same temperature conditions. Relatedly, the peak temperature of the nth laser heat treatment region and the peak temperature of the (n + 1)th laser heat treatment region may be different from each other. Also, there may be a temperature deviation within the (n + 1)th laser heat treatment region. As a result, this temperature non-uniformity can cause non-uniformity of device characteristics and characteristic degradation.

[0076] Figure 9 An evaluation curve graph for explaining the problems of the laser heat treatment method of the comparative example. Figure 9 It shows the temperatures of the upper surface and the lower surface of the substrate changing with time respectively when performing heat treatment by irradiating the upper surface of the substrate (wafer) with laser. In this case, the intermediate temperature of the substrate is 700 °C, and the heating temperature (i.e., the peak temperature) of the upper surface portion of the substrate irradiated with laser is 1300 °C.

[0077] Refer to Figure 9 , after the upper surface portion and the lower surface portion of the substrate both reach 700 °C, when the temperature of the upper surface portion of the substrate rises to 1300 °C by laser irradiation, the temperature of the lower surface portion rises to about 800 °C due to the influence of the laser irradiation on the upper surface portion and then decreases with time. The time consumed for the temperature of the lower surface portion to drop to 700 °C again is about 1.7 seconds. If the intermediate temperature of the substrate is 400 °C and the heating temperature (i.e., the peak temperature) of the upper surface portion is 1300 °C, after performing the laser heat treatment on the upper surface portion, the time expected for the temperature of the lower surface portion to drop to 400 °C again is about 2.55 seconds.

[0078] Figure 9The evaluation data means that when high-temperature heat treatment is performed on a specified area of the upper surface portion of the substrate, the temperature of the lower region and the surrounding region can change significantly. However, according to an embodiment of the present invention, by ensuring that the interval between the nth laser heat treatment region and the (n + 1)th laser heat treatment region is a specified distance or more, when the laser heat treatment process is performed sequentially, heat treatment can be performed on all multiple regions of the substrate structure under substantially the same temperature conditions.

[0079] The method for manufacturing an electronic device (semiconductor device) according to an embodiment of the present invention may include a step of performing heat treatment on a substrate structure using the laser heat treatment method of the embodiment and a step of forming an electronic device (semiconductor device) using the heat-treated substrate structure. For example, the step of forming an electronic device (semiconductor device) using the heat-treated substrate structure may include a step of performing a finishing process on the substrate structure, a step of dicing the substrate structure into a plurality of device portions, and a step of packaging the plurality of device portions, etc. The finishing process, dicing process, packaging process, etc. are well-known techniques, and detailed descriptions related thereto will be omitted.

[0080] Figure 10 It is a perspective view of a method for manufacturing an electronic device for explaining a laser heat treatment method for an application substrate structure according to an embodiment of the present invention.

[0081] Referring to Figure 10 , a plurality of devices D10 can be formed using the heat-treated substrate structure S100. The plurality of devices D10 can be electronic devices (semiconductor devices). The device D10 can also be a storage device or a non-storage device.

[0082] As described above, an embodiment of the present invention can implement the following laser heat treatment method, that is, during the heat treatment using a laser, the problem of temperature non-uniformity that may occur in the substrate structure can be prevented or minimized. In particular, according to an embodiment, in a laser heat treatment process using a stepper method, the problem of temperature non-uniformity of the substrate structure can be prevented or minimized during the exposure (shot) of laser irradiation. When the laser heat treatment method of an embodiment of the present invention is applied, an electronic device (semiconductor device) having excellent performance and uniformity can be manufactured.

[0083] This specification discloses the preferred embodiments of the present invention. Although specific terms are used, they are only for the convenience of explaining the technical content of the present invention and helping to understand its common meaning, and do not limit the scope of the present invention. Obviously, except for the embodiments disclosed herein, those of ordinary skill in the art to which the present invention pertains can implement other variations based on the technical idea of the present invention. It should be understood that those of ordinary skill in the art to which the present invention pertains can make various modifications, changes, and variations to the laser heat treatment method of the substrate structure of the embodiments described with reference to Figures 1 to 7d and Figure 10 the method for preparing an electronic device using the same. Therefore, the scope of the present invention should be defined based on the technical idea described in the claims for protection of the invention, rather than the embodiments described.

[0084] Description of Reference Numerals

[0085] 10, 11, 12: First Region

[0086] 20, 21, 22: Second Region

[0087] 30, 31, 32: Third Region

[0088] D10: Device

[0089] S10: Substrate Structure

[0090] S100: Heat-Treated Substrate Structure

Claims

1. A laser heat treatment method for a substrate structure, which performs heat treatment by sequentially irradiating a plurality of regions on one surface of the substrate structure with laser, and is characterized in that, the irradiation of the laser on the substrate structure is performed in units of unit laser irradiation regions; the laser heat treatment method includes the following steps: performing the n-th laser heat treatment on the substrate structure; and performing the (n + 1)-th laser heat treatment on the substrate structure, the n-th laser heat treatment is performed in a first region of the substrate structure, and the (n + 1)-th laser heat treatment is performed in a second region of the substrate structure, the first region and the second region are separated from each other along any one of a first direction, a second direction perpendicular to the first direction, and a third direction between the first direction and the second direction, and the interval between the first region and the second region is 90% or more of the width of the unit laser irradiation region in any one of the first direction and the second direction.

2. The laser heat treatment method of the substrate structure according to claim 1, characterized in that, The laser heat treatment method is performed in a step-by-step manner.

3. The laser heat treatment method of the substrate structure according to claim 1, characterized in that, The unit laser irradiation region is an exposure region where laser is simultaneously irradiated at one time.

4. The laser heat treatment method of the substrate structure according to claim 1, characterized in that, When the first region and the second region are separated from each other along any one of the first direction and the second direction, the interval between the first region and the second region is a distance of N times the width of the unit laser irradiation region in any one of the first direction and the second direction, where N is an integer of 1 or more.

5. The laser heat treatment method of the substrate structure according to claim 1, characterized in that, When the first region and the second region are separated from each other along the third direction, the interval between the first region and the second region is a distance of N times the width of the unit laser irradiation region in any one of the first direction and the second direction or a distance equal to or greater than the diagonal length of the unit laser irradiation region, where N is an integer of 1 or more.

6. The laser heat treatment method for a substrate structure according to claim 1, characterized in that, the laser heat treatment method includes the following step: performing the (n + m)-th laser heat treatment on the substrate structure, where m is an integer greater than 2, the (n + m)-th laser heat treatment is performed in a third region of the substrate structure, the third region is located between the first region and the second region.

7. The laser heat treatment method of the substrate structure according to claim 1, characterized in that The laser heat treatment method is effective for the entire effective region of the one surface of the substrate structure.

8. The laser heat treatment method of the substrate structure according to claim 1, characterized in that, The substrate structure includes a semiconductor film or an insulator film, and the heat treatment using the laser changes the crystallinity, physical properties, or film quality of the semiconductor film or the insulator film.

9. The laser heat treatment method of the substrate structure according to claim 1, characterized in that, The substrate structure includes a wafer.

10. The laser heat treatment method of the substrate structure according to claim 1, characterized in that, The laser includes one of ultraviolet rays, visible light, infrared rays, and microwaves.

11. The laser heat treatment method for a substrate structure according to claim 1, characterized in that, before performing heat treatment using the laser, the initial temperature of the substrate structure is 550 °C or lower, the heating temperature at which the corresponding region of the substrate structure is irradiated with the laser is in the range of 650 °C to 3000 °C.

12. A method for preparing an electronic device, characterized in that, including the following steps: Performing heat treatment on a substrate structure using the laser heat treatment method according to any one of claims 1 to 11; and Forming an electronic device using the heat-treated substrate structure.

Images