Single crystal furnace first seeding calibration method and device, electronic equipment and medium

Abstract

The invention provides a first seeding calibration method and device for a single crystal furnace, electronic equipment and a medium, and effectively solves the problem that the prior art generally depends on a fixed sensor to carry out data detection and combines with artificial experience to carry out parameter adjustment so as not to meet the requirement of first seeding of the single crystal furnace. The method comprises the following steps: setting a plurality of calibration dimensions of the single crystal furnace for first seeding based on a seeding material, and determining a plurality of corresponding calibration parameters based on the calibration dimensions; establishing a target seeding calibration environment for the single crystal furnace in a target calibration dimension so as to obtain various parameter data and the change data; controlling the target calibration calculation mode to calculate the change data to obtain target calibration parameter data; and writing target calibration parameter data corresponding to the target calibration dimension into the calibration system, so as to control the single crystal furnace to perform primary seeding on the seeding material based on the target calibration parameter data on the basis of the calibration system.

Description

Technical Field

[0001] The present application relates to the technical field of single crystal rod preparation, and more specifically, to a method, device, electronic device and medium for calibrating the first crystal seeding of a single crystal furnace. Background Art

[0002] During the first crystal seeding process of current single crystal furnaces, the initial set values of the crystal seeding power and the liquid surface temperature are easily affected by environmental interference, resulting in a large deviation between the actual liquid surface temperature and the set value, and further leading to the phenomenon of temperature distortion. Existing technologies usually rely on fixed sensors for data detection and combine manual experience for parameter adjustment, which requires multiple trial-and-error corrections. This method is inefficient and easily leads to unstable crystal growth quality due to operation errors; the measurement of the liquid surface temperature relies on fixed sensors for detection, and it is impossible to dynamically correct the errors caused by thermal radiation or melt flow; the adjustment of the crystal seeding power lacks a closed-loop feedback mechanism and requires repeated manual intervention, which is time-consuming and lacks accuracy.

[0003] The occurrence of the above phenomena results in a low success rate of the first crystal seeding of the single crystal furnace, the crystal seeding quality not meeting the expectations, and also causing material waste and an increase in production costs. Therefore, an accurate and scientific calibration method applicable to the single crystal furnace needs to be provided. Summary of the Invention

[0004] In view of this, the purpose of the present application is to provide a method, device, electronic device and medium for calibrating the first crystal seeding of a single crystal furnace, which effectively solves the problem that the existing method of relying on fixed sensors for data detection and combining manual experience for parameter adjustment cannot meet the requirements of the first crystal seeding of the single crystal furnace.

[0005] In a first aspect, an embodiment of the present application provides a method for calibrating the first crystal seeding of a single crystal furnace, which is applied to a calibration system. The method includes:

[0006] Set multiple calibration dimensions for the first crystal seeding of the single crystal furnace based on the crystal seeding material, so as to determine corresponding multiple calibration parameters based on the calibration dimensions; different calibration dimensions correspond to different calibration calculation methods and different crystal seeding calibration environments;

[0007] Build a target crystal seeding calibration environment for the single crystal furnace in the target calibration dimension to obtain multiple parameter data corresponding to the multiple calibration parameters and the change data of the multiple parameter data within the target calibration time;

[0008] Control the target calibration calculation method corresponding to the target calibration dimension to calculate the change data, and obtain the corresponding target calibration parameter data;

[0009] Write target calibration parameter data corresponding to the target calibration dimension into the calibration system, so as to control the single crystal furnace based on the calibration system to perform the first seeding of the seeding material based on the target calibration parameter data.

[0010] In combination with the first aspect, the embodiment of the present application provides a first possible implementation of the first aspect, wherein the single crystal furnace is set to perform multiple calibration dimensions for first seeding based on the seeding material, including:

[0011] Determine multiple influencing factors that affect seeding quality results, and collect historical data corresponding to the multiple influencing factors;

[0012] Key influencing factors are screened out based on historical data corresponding to the multiple influencing factors, and the key influencing factors are mapped to calibration dimensions.

[0013] In combination with the first aspect, the embodiment of the present application provides a second possible implementation of the first aspect, wherein the calibration dimension at least includes an exposure calibration dimension;

[0014] The controlling the target calibration calculation method corresponding to the target calibration dimension to calculate the change data to obtain corresponding target calibration parameter data includes:

[0015] Processing the change data based on a preset environment calculation network in the target calibration calculation method to obtain an environment temperature;

[0016] The current exposure level in the single crystal furnace is acquired, and the current exposure level and the ambient temperature are processed to obtain a target exposure level.

[0017] In combination with the first aspect, an embodiment of the present application provides a third possible implementation of the first aspect, wherein the step of obtaining the ambient temperature by processing the change data based on a preset environment computing network based on the target calibration calculation method includes:

[0018] Obtaining multiple sub-influencing factors of the seeding material that affect the exposure and corresponding sub-computation networks;

[0019] The sub-computing networks corresponding to the plurality of sub-influencing factors are combined to obtain the preset environment computing network.

[0020] In combination with the first aspect, the embodiment of the present application provides a fourth possible implementation of the first aspect, wherein the calibration dimension at least includes a power calibration dimension;

[0021] The controlling the target calibration calculation method corresponding to the target calibration dimension to calculate the change data to obtain corresponding target calibration parameter data includes:

[0022] Making a judgment based on the temperature change data of the seed crystal material within the target stage to obtain a judgment result;

[0023] Based on the judgment result, calling the target calibration calculation method to calculate the seed crystal power of the single crystal furnace to obtain the target seed crystal power.

[0024] Combined with the first aspect, the embodiment of the present application provides a fifth possible implementation manner of the first aspect. After calling the target calibration calculation method to calculate the seed crystal power to obtain the target seed crystal power, it includes:

[0025] Controlling the single crystal furnace to execute the seed crystal power and obtaining the temperature change data after the target calibration time;

[0026] Judging based on the temperature change data to calibrate the seed crystal power until the temperature change data meets the preset calibration end condition.

[0027] Combined with the first aspect, the embodiment of the present application provides a sixth possible implementation manner of the first aspect. The controlling the single crystal furnace to perform seed crystal growth on the seed crystal material based on the target calibration parameter data by the calibration system includes:

[0028] Controlling the single crystal furnace to perform parameter setting and seed crystal growth based on the target calibration parameter data corresponding to multiple calibration dimensions provided by the calibration system;

[0029] Evaluating the seed crystal quality of the single crystal furnace after the seed crystal growth is completed to determine the calibration quality of the calibration system based on the seed crystal quality.

[0030] In a second aspect, the embodiment of the present application provides a device for calibrating the first seed crystal growth of a single crystal furnace, which is applied to a calibration system. The device includes:

[0031] A setting module, configured to set multiple calibration dimensions for the first seed crystal growth of the single crystal furnace based on the seed crystal material, so as to determine corresponding multiple calibration parameters; different calibration dimensions correspond to different calibration calculation methods and different seed crystal growth calibration environments;

[0032] A building module, configured to build a target seed crystal growth calibration environment for the single crystal furnace in the target calibration dimension, so as to obtain multiple parameter data corresponding to the multiple calibration parameters and the change data of the multiple parameter data within the target calibration time;

[0033] A control module, configured to control the target calibration calculation method corresponding to the target calibration dimension to calculate the change data to obtain the corresponding target calibration parameter data;

[0034] The seed crystal module is used to write the target calibration parameter data corresponding to the target calibration dimension into the calibration system, so as to control the single crystal furnace to perform the first seed crystal on the seed crystal material based on the target calibration parameter data according to the calibration system.

[0035] In a third aspect, an embodiment of the present application provides an electronic device, including: a processor, a memory, and a bus. The memory stores machine-readable instructions executable by the processor. When the electronic device runs, the processor communicates with the memory through the bus. When the machine-readable instructions are executed by the processor, the steps of any one of the single crystal furnace first seed crystal calibration methods are executed.

[0036] In a fourth aspect, an embodiment of the present application provides a computer-readable storage medium. A computer program is stored on the computer-readable storage medium. When the computer program is run by a processor, the steps of any one of the single crystal furnace first seed crystal calibration methods are executed.

[0037] A single crystal furnace first seed crystal calibration method provided by an embodiment of the present application is applied to a calibration system. The method includes: setting multiple calibration dimensions for the single crystal furnace to perform the first seed crystal on the seed crystal material, so as to determine corresponding multiple calibration parameters based on the calibration dimensions; different calibration dimensions correspond to different calibration calculation methods and different seed crystal calibration environments; building a target seed crystal calibration environment for the single crystal furnace in the target calibration dimension to obtain multiple parameter data corresponding to the multiple calibration parameters and the change data of the multiple parameter data within the target calibration time; controlling the target calibration calculation method corresponding to the target calibration dimension to calculate the change data to obtain the corresponding target calibration parameter data; writing the target calibration parameter data corresponding to the target calibration dimension into the calibration system, so as to control the single crystal furnace to perform the first seed crystal on the seed crystal material based on the target calibration parameter data according to the calibration system, thereby scientifically, effectively, and accurately ensuring the success rate during the first seed crystal of the single crystal furnace, avoiding the problems of insufficient accuracy, low success rate of the first seed crystal, inability to meet the expected crystal growth quality effect, material waste, and increased production costs caused by the existing method of using fixed sensors and human experience, and thus ensuring the crystal growth quality effect during the first seed crystal of the single crystal furnace. Description of the Drawings

[0038] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings required in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can be obtained based on these drawings without creative efforts.

[0039] Figure 1 It shows a schematic flow chart of the first crystal pulling calibration method for a single crystal furnace provided by an embodiment of the present application;

[0040] Figure 2 It shows a schematic flow chart of the exposure calibration dimension provided by an embodiment of the present application;

[0041] Figure 3 It shows a schematic flow chart of the power calibration dimension provided by an embodiment of the present application;

[0042] Figure 4 It shows a structural block diagram of the first crystal pulling calibration device for a single crystal furnace provided by an embodiment of the present application;

[0043] Figure 5 It shows a structural block diagram of an electronic device provided by an embodiment of the present application. Detailed implementation manners

[0044] To make the objectives, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It should be understood that the accompanying drawings in the present application are only for the purposes of illustration and description, and are not used to limit the protection scope of the present application. In addition, it should be understood that the schematic drawings are not drawn to scale. The flow charts used in the present application show the operations implemented according to some embodiments of the present application. It should be understood that the operations in the flow charts may not be implemented in sequence, and the steps without logical context relationships may be reversed or implemented simultaneously. In addition, those skilled in the art may add one or more other operations to the flow chart or remove one or more operations from the flow chart under the guidance of the content of the present application.

[0045] In addition, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application described and shown in the accompanying drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application claimed, but only represents the selected embodiments of the present application. All other embodiments obtained by those skilled in the art based on the embodiments of the present application without creative efforts belong to the protection scope of the present application.

[0046] It should be noted that the term "including" will be used in the embodiments of the present application to indicate the existence of the features stated thereafter, but does not exclude the addition of other features.

[0047] Currently, the technology that usually relies on fixed sensors for data detection and combines manual experience for parameter adjustment is applied to the calibration work during the first crystal seeding of a single crystal furnace. Multiple trial-and-error corrections are required, which is inefficient and prone to unstable crystal growth quality due to operation errors. The liquid surface temperature measurement relies on fixed sensors for detection, and errors caused by thermal radiation or melt flow cannot be dynamically corrected. The adjustment of the crystal seeding power lacks a closed-loop feedback mechanism and requires repeated manual intervention, which is time-consuming and lacks precision. The occurrence of all these phenomena leads to a low success rate of the first crystal seeding in the single crystal furnace, the crystal seeding quality not meeting expectations, and also causes material waste and an increase in production costs. Therefore, an accurate and scientific calibration method applicable to the single crystal furnace needs to be provided.

[0048] Based on this, the embodiments of the present application provide a calibration method, device, electronic device, and medium for the first crystal seeding of a single crystal furnace, which will be described below through embodiments.

[0049] Embodiment 1

[0050] To facilitate the understanding of this embodiment, first, a calibration method for the first crystal seeding of a single crystal furnace disclosed in the embodiments of the present application will be introduced in detail. As Figure 1 shown in the flowchart of a calibration method for the first crystal seeding of a single crystal furnace, a calibration method for the first crystal seeding of a single crystal furnace provided by the present application is applied to a calibration system, and the method includes:

[0051] S101. Set multiple calibration dimensions for the first crystal seeding of the single crystal furnace based on the crystal seeding material, so as to determine corresponding multiple calibration parameters based on the calibration dimensions; different calibration dimensions correspond to different calibration calculation methods and different crystal seeding calibration environments;

[0052] S102. Build a target crystal seeding calibration environment for the single crystal furnace in the target calibration dimension to obtain multiple parameter data corresponding to the multiple calibration parameters and the change data of the multiple parameter data within the target calibration time;

[0053] S103. Control the target calibration calculation method corresponding to the target calibration dimension to calculate the change data to obtain corresponding target calibration parameter data;

[0054] S104. Write the target calibration parameter data corresponding to the target calibration dimension into the calibration system, so as to control the single crystal furnace to perform the first crystal seeding on the crystal seeding material based on the target calibration parameter data based on the calibration system.

[0055] In step S101, based on the calibration of seeding for the single crystal furnace using the seeding material, a calibration system is set up. The calibration system can achieve various calibration effects for the single crystal furnace. Therefore, when conducting the first seeding for the single crystal furnace, the single crystal furnace is calibrated based on the calibration system. The seeding material includes a seed crystal and a silicon solution. The calibration system analyzes the seeding data generated during the first seeding of an existing single crystal furnace, thereby setting multiple calibration dimensions for the single crystal furnace to conduct the first seeding based on the seeding material. The calibration dimensions include an exposure calibration dimension and a power calibration dimension. Moreover, the calibration system also sets corresponding multiple calibration parameters based on the calibration dimensions, thereby determining that the multiple calibration parameters set corresponding to the calibration dimensions are the calibration parameters that the single crystal furnace needs to be calibrated. The calibration parameters are set based on the equipment characteristics of the single crystal furnace, the purity of the seeding material (such as the seed crystal and polysilicon raw material), and the process requirements. Then, the calibration parameter corresponding to the exposure calibration dimension includes the exposure degree, and the calibration parameter corresponding to the power calibration dimension includes the seeding power. Thus, the single crystal furnace is calibrated based on the calibration parameters to achieve the calibration of each calibration dimension of the single crystal furnace.

[0056] In a specific implementation process of step S101, there is an embodiment: The setting of multiple calibration dimensions for the single crystal furnace to conduct the first seeding based on the seeding material includes:

[0057] S1011. Determine various influencing factors that affect the seeding quality result, and collect the historical data corresponding to the various influencing factors;

[0058] S1012. Screen out the key influencing factors based on the historical data corresponding to the various influencing factors, and map the key influencing factors to calibration dimensions.

[0059] In steps S1011 - S1012, the calibration system of the present application analyzes the seeding data generated during the first seeding of an existing single crystal furnace, and analyzes various influencing factors that affect the seeding quality result during the first seeding of the single crystal furnace. The influencing factors include seeding pulling speed, single crystal furnace rotation speed, argon gas flow rate, exposure, and single crystal furnace power, and collects the historical data corresponding to the various influencing factors. The present application performs analysis based on the historical data corresponding to the various influencing factors, such as calculating the correlation between the influencing factors and the seeding quality result. If the correlation is greater than a preset threshold, other methods can also be used to screen out the key influencing factors based on the historical data corresponding to the various influencing factors. Then the key influencing factors are exposure and single crystal furnace power, and the other influencing factors do not have a great impact on the seeding quality during seeding, so other influencing factors are not set as key influencing factors. The calibration system of the present application also pre - determines the mapping relationship between the key influencing factors and the calibration dimensions. Then, based on the mapping relationship, the key influencing factors screened out are used as the calibration dimensions. The obtained calibration dimensions are the exposure calibration dimension and the power calibration dimension.

[0060] In step S102, after determining various calibration dimensions and corresponding calibration parameters, a target seeding calibration environment for the single crystal furnace in the target calibration dimension is established. The target calibration dimension refers to the calibration dimension that the single crystal furnace is currently adjusting, that is, the calibration dimensions of the present application do not have a sequence, and can be carried out simultaneously or in sequence. The established target seeding calibration environment can be the same as or different from the environment when the single crystal furnace actually reacts. Among them, the seeding calibration environment for the exposure calibration dimension is that when the seed crystal and the silicon solution are welded, the liquid surface temperature at which the seed crystal is immersed in the silicon solution is controlled to be a preset value of 1460 °C. The seeding calibration environment for the power calibration dimension is that the surface of the silicon solution is at a constant temperature, and the seeding materials including the seed crystal and the silicon solution in the single crystal furnace are controlled to react according to a predetermined working step or process, so as to obtain various parameter data corresponding to the various calibration parameters and the change data of the various parameter data within the target calibration time. Different calibration dimensions have corresponding calibration times, and the calibration time is the time when the seeding materials react. Then, within this target calibration time, various parameter data corresponding to the various calibration parameters are obtained through various acquisition methods. The acquisition method can be a sensor or a manual method. Then, the parameter data before and after the target calibration time are calculated, such as subtraction, to obtain the change data. The change data under the exposure calibration dimension is the diameter change rate of the seed crystal, and the change data under the power calibration dimension is the temperature change data of the silicon solution.

[0061] In step S103, after the change data under the target calibration dimension, the target calibration calculation method corresponding to the target calibration dimension is controlled to calculate the change data, and the corresponding target calibration parameter data is obtained. That is, the present application also calculates the change data in the corresponding calibration dimension to obtain the target calibration parameter data of the target calibration dimension. The present application sets corresponding calibration calculation methods in different calibration dimensions to accurately and specifically calculate the calibration dimensions of the single crystal furnace.

[0062] In the specific implementation process of step S103, there is an embodiment: as Figure 2 shown, the calibration dimension at least includes an exposure calibration dimension;

[0063] The control of the target calibration calculation method corresponding to the target calibration dimension to calculate the change data and obtain the corresponding target calibration parameter data includes:

[0064] S10311. Process the change data based on the preset environment calculation network in the target calibration calculation method to obtain the ambient temperature;

[0065] S10312. Obtain the current exposure in the single crystal furnace, and process the current exposure and the ambient temperature to obtain the target exposure.

[0066] In steps S10311 - S10312, based on the target calibration calculation method, the change data is processed by the preset environment calculation network provided by formula (1) to obtain the ambient temperature:

[0067]

[0068] Among them, Tenv is the ambient temperature obtained based on the change data, D is the diameter, t is the target calibration time, Tmelt = 1687K: melting point of silicon (1414 °C), σ = 5.67×10-8 J / (s·pm2K4): Stefan-Boltzmann constant; the change data of the exposure calibration dimension is the diameter change rate, then the ambient temperature is calculated based on the diameter change rate. The diameter change rate is the diameter change rate between the crystal diameter L1 after the seed crystal is immersed in the silicon solution for 1 minute and the diameter L2 after being immersed for 6 minutes, and is obtained based on formula (2), with the unit of mm / min:

[0069]

[0070] And update the preset temperature set value in the single crystal furnace based on the ambient temperature, that is, the ambient temperature in the single crystal furnace is inversely deduced based on the temperature set value, and obtain the current exposure in the single crystal furnace. The current exposure is also preset, which can be set based on human experience or randomly, and process the current exposure and the ambient temperature setting based on formula (3) to obtain the target exposure:

[0071] Target exposure = Current exposure / (Current liquid temperature - 1400) * (Tenv - 1400) (3);

[0072] Where Tenv is the ambient temperature obtained based on the change data, and the target exposure at this time is the target calibration parameter data under the exposure calibration dimension.

[0073] In the specific implementation process of step S10311, there is an embodiment: The processing of the change data to obtain the ambient temperature based on the target calibration calculation method based on the preset environment calculation network includes:

[0074] S103111. Obtain various sub-influence factors of the seeding material that affect the exposure and the corresponding sub-computation networks;

[0075] S103112. Combine the sub-computation networks corresponding to the various sub-influence factors to obtain the preset environment calculation network.

[0076] In steps S103111 - S103112, analyze based on the existing or historical diameter change rate to obtain various sub-influence factors of the seeding material that affect the exposure. The various sub-influence factors respectively include thermal radiation, the relationship between the melting rate and heat flow, and the diameter change rate, and obtain the corresponding sub-computation networks set by the calibration system for the various sub-influence factors. The sub-computation networks corresponding to thermal radiation, the relationship between the melting rate and heat flow, and the diameter change rate are represented by formulas (4) - (6):

[0077] Q rad = ∈σ(T env 4 -T melt 4 )(4);

[0078]

[0079] Where ρ = 2570 kg / m3: density of silicon; L = 1.7877 × 106 J / kg: latent heat of melting of silicon; ∈ = 0.55: emissivity of silicon; σ = 5.67 × 10-8 J / (s\cdotpm2K4): Stefan-Boltzmann constant; Tmelt = 1687 K: melting point of silicon (1414 °C); Tenv: ambient temperature; A is the melting surface area (the lateral area of the cylinder A = πDh, but the diameter change is only related to radial melting, h is the melting height, which can be simplified to a proportional relationship), the volume of the cylinder Then, based on formulas (4)-(6), formula (1) is obtained.

[0080] In the specific implementation process of step S103, there is another embodiment: Figure 3 As shown, the calibration dimension at least includes a power calibration dimension;

[0081] The controlling the target calibration calculation method corresponding to the target calibration dimension to calculate the change data to obtain corresponding target calibration parameter data includes:

[0082] S10321, performing a judgment based on the temperature change data of the seeding material in the target stage to obtain a judgment result;

[0083] S10322. Based on the judgment result, the target calibration calculation method is called to calculate the seeding power of the single crystal furnace to obtain the target seeding power.

[0084] In steps S10321 - S10322, the power calibration dimension can only be achieved within the target stage. The target stage set in this application is the temperature stabilization stage. After this application enters the target stage, the initial liquid surface temperature of the silicon solution is recorded as T1, and the liquid surface temperature after 20 minutes is recorded as T2. A judgment result is obtained based on the temperature change data T2 - T1 of the seed crystal material within the target stage, that is, it is judged whether the temperature change data exceeds a preset first change threshold. Here, the preset first change threshold is set to 1, that is, if T2 - T1 > 1, it is judged that the seed crystal power does not need to be adjusted, otherwise adjustment is required. Then, the target calibration calculation method is called to calculate the target seed crystal power for the seed crystal power. The target calibration calculation method is to judge whether the temperature change data is within a preset change range. Here, the preset change range is set from 0 to 1, that is, 0 ≤ T2 - T1 < 1. If the temperature change data is within the preset change range, the current seed crystal power of the single crystal furnace is lowered by a first target step. Here, the first target step is set to 0.5 kw. If the temperature change data T1 - T2 < 0, the current seed crystal power of the single crystal furnace is lowered by a second target step. Here, the second target step is set to 1 kw. Then, the current seed crystal power at this time and the seed crystal power after calculation with the first target step or the second target step are the target seed crystal power, that is, the target calibration parameter data under the power calibration dimension.

[0085] In the specific implementation process of step S10322, there is an embodiment: after calling the target calibration calculation method to calculate the target seed crystal power for the seed crystal power, it includes:

[0086] S103221. Control the single crystal furnace to execute the seed crystal power and obtain the temperature change data after the target calibration time;

[0087] S103222. Make a judgment based on the temperature change data to calibrate the seed crystal power until the temperature change data meets the preset calibration end condition.

[0088] In steps S103221 - S103222, after obtaining the current seeding power and the seeding power after calculation with the first target step or the second target step, let the liquid surface temperature T2 be the new T1. Then control the single crystal furnace to execute the seeding power, and obtain the temperature change data after the target calibration time, that is, obtain the liquid surface temperature record T2 again after 20 minutes. Then, after judging the target calibration calculation method corresponding to the above power calibration dimension based on the temperature change data obtained from T1 - T2, until the temperature change data meets the preset calibration end condition, where the preset calibration end condition is that the temperature change data T1 - T2 > 1, then stop calibrating the seeding power of the single crystal furnace, that is, complete the calibration of the seeding power of the single crystal furnace, ensuring the calibration of the single crystal furnace under the power calibration dimension. Otherwise, repeat the above steps to judge the temperature change data and adjust the current seeding power of the single crystal furnace based on the first target step or the second target step to obtain the optimal seeding power.

[0089] In step S104, after obtaining the calibration parameter data corresponding to the exposure calibration dimension and the power calibration dimension respectively, write the calibration parameter data corresponding to the exposure calibration dimension and the power calibration dimension respectively into the target calibration parameter data corresponding to the target calibration dimension in the calibration system, so as to control the single crystal furnace to perform the first seeding on the seeding material based on the target calibration parameter data through the calibration system, that is, the calibration system automatically adjusts the working state of the single crystal furnace to ensure that the seeding process is stable and meets the process requirements, thereby ensuring the success rate during the first seeding. And according to the result of the first seeding, optimize and adjust the target calibration parameter data to improve the quality and yield of monocrystalline silicon.

[0090] In a specific implementation process of step S104, there is an embodiment: controlling the single crystal furnace to perform seeding on the seeding material based on the target calibration parameter data through the calibration system includes:

[0091] S1041. Control the single crystal furnace to perform parameter setting and seeding based on the target calibration parameter data corresponding to multiple calibration dimensions provided by the calibration system;

[0092] S1042. Evaluate the seeding quality of the single crystal furnace after the seeding ends, so as to determine the calibration quality of the calibration system based on the seeding quality.

[0093] In steps S1041 - S10412, through the interfaces provided by the calibration system (such as human - machine interface, communication protocol, etc.), the target calibration parameter data is written into the memory or database of the calibration system. Then, the calibration system is connected to the production system in the single - crystal furnace to output the target calibration parameter data to the crystal - pulling system. The crystal - pulling system can be the Crystal Sheng system, that is, control the crystal - pulling system in the single - crystal furnace to set parameters according to the target calibration parameter data, so as to carry out crystal - pulling. When the crystal - pulling process meets the predetermined requirements, the calibration system controls the single - crystal furnace to stop heating and lifting operations, and conducts a quality inspection on the single - crystal silicon rod after crystal - pulling, evaluating key indicators such as its diameter, dislocation density, resistivity, etc., that is, realizing the evaluation of the crystal - pulling quality from key indicators such as diameter, dislocation density, resistivity, etc., to determine whether the crystal - pulling quality meets the expectations. If it meets the expectations, the calibration quality of the calibration system is excellent and no processing is required. Then, according to the crystal - pulling quality, subsequent processing (such as cutting, grinding, polishing, etc.) is carried out on the single - crystal silicon rod. If the crystal - pulling quality does not meet the expectations, the calibration quality is poor, and the target calibration parameter data output by the calibration system is adjusted to ensure the subsequent crystal - pulling quality.

[0094] Embodiment 2

[0095] This application also provides a first - time crystal - pulling calibration device for a single - crystal furnace, as Figure 4 shown in the block diagram of a first - time crystal - pulling calibration device for a single - crystal furnace. The functions implemented by this first - time crystal - pulling calibration device for a single - crystal furnace correspond to the steps of performing a first - time crystal - pulling calibration method on a terminal device. This device can be understood as a component of a server including a processor. The first - time crystal - pulling calibration device described in this application is applied to a calibration system. The device includes:

[0096] A setting module 401, configured to set multiple calibration dimensions for the single - crystal furnace to perform the first - time crystal - pulling based on the crystal - pulling material, so as to determine corresponding multiple calibration parameters based on the calibration dimensions; different calibration dimensions correspond to different calibration calculation methods and different crystal - pulling calibration environments;

[0097] A building module 402, configured to build a target crystal - pulling calibration environment for the single - crystal furnace in the target calibration dimension, so as to obtain multiple parameter data corresponding to the multiple calibration parameters and the change data of the multiple parameter data within the target calibration time;

[0098] A control module 403, configured to control the target calibration calculation method corresponding to the target calibration dimension to calculate the change data, and obtain the corresponding target calibration parameter data;

[0099] The seeding module 404 is used to write the target calibration parameter data corresponding to the target calibration dimension into the calibration system, so as to control the single crystal furnace to seed the seeding material for the first time based on the target calibration parameter data based on the calibration system.

[0100] In a feasible implementation, the setting module includes:

[0101] A collection module, used to determine multiple influencing factors affecting seeding quality results, and collect historical data corresponding to the multiple influencing factors;

[0102] The screening module is used to screen out key influencing factors based on the historical data corresponding to the multiple influencing factors, and map the key influencing factors into calibration dimensions.

[0103] In a feasible implementation manner, the control module includes:

[0104] A processing module, configured to process the change data based on a preset environment calculation network in the target calibration calculation method to obtain an environment temperature;

[0105] The first acquisition module is used to acquire the current exposure level in the single crystal furnace, and process the current exposure level and the ambient temperature to obtain a target exposure level.

[0106] In a feasible implementation manner, the control module further includes:

[0107] A second acquisition module is used to acquire multiple sub-influencing factors of the seeding material that affect the exposure and corresponding sub-computing networks;

[0108] The combination module is used to combine the sub-computing networks corresponding to the multiple sub-influencing factors to obtain the preset environment computing network.

[0109] In a feasible implementation manner, the control module also includes:

[0110] A judgment module, used to make a judgment based on the temperature change data of the seeding material in the target stage to obtain a judgment result;

[0111] Based on the judgment result, the target calibration calculation method is called to calculate the seeding power of the single crystal furnace to obtain the target seeding power.

[0112] In a feasible implementation manner, the control module further includes:

[0113] A third acquisition module is used to control the single crystal furnace to execute the seeding power and acquire temperature change data after a target calibration time;

[0114] A calibration module, configured to make a judgment based on the temperature change data to calibrate the seeding power until the temperature change data meets a preset calibration end condition.

[0115] In a feasible implementation manner, the seeding module includes:

[0116] A providing module, configured to control the single crystal furnace to perform parameter setting and seeding based on the target calibration parameter data corresponding to multiple calibration dimensions provided by the calibration system;

[0117] An evaluation module, configured to evaluate the seeding quality of the single crystal furnace after seeding ends, so as to determine the calibration quality of the calibration system based on the seeding quality.

[0118] Embodiment 3

[0119] This application also provides an electronic device, as Figure 5 shown, including: a processor 501, a memory 502, and a bus 503. The memory 502 stores machine-readable instructions executable by the processor 501. When the electronic device runs, communication is performed between the processor 501 and the memory 502 through the bus 503. When the machine-readable instructions are executed by the processor 501, the steps of any one of the single crystal furnace first seeding calibration methods are executed.

[0120] Embodiment 4

[0121] This application also provides a computer-readable storage medium. A computer program is stored on the computer-readable storage medium. When the computer program is run by a processor, the steps of any one of the single crystal furnace first seeding calibration methods are executed.

[0122] Those skilled in the art can clearly understand that for the convenience and brevity of description, the specific working processes of the systems and devices described above can refer to the corresponding processes in the method embodiments, which will not be repeated in this application. In the several embodiments provided in this application, it should be understood that the disclosed systems, devices, and methods can be implemented in other ways. The device embodiments described above are only illustrative. For example, the division of the modules is only a logical function division, and there can be other division methods in actual implementation. For another example, multiple modules or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point, the displayed or discussed couplings or direct couplings or communication connections to each other can be through some communication interfaces. The indirect couplings or communication connections of the devices or modules can be in electrical, mechanical, or other forms.

[0123] The module described as a separation component may or may not be physically separated. The component shown as a module may or may not be a physical unit, that is, it may be located in one place or distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0124] In addition, in each embodiment of the present application, each functional unit can be integrated in a processing unit, can also exist physically alone for each unit, or two or more units can be integrated in one unit.

[0125] If the function is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a non-volatile computer-readable storage medium executable by a processor. Based on such an understanding, the technical solution of the present application, in essence, or the part that contributes to the prior art, or a part of this technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions for causing a computer device (which can be a personal computer, a platform server, or a network device, etc.) to execute all or part of the steps of the methods described in each embodiment of the present application. The aforementioned storage medium includes: various media such as USB flash drives, mobile hard disks, ROM, RAM, magnetic disks, or optical discs that can store program codes.

[0126] The above is only the specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present application, and all of them should be covered by the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A method for calibrating the first crystal seeding of a single crystal furnace, characterized in that, Applied to a calibration system, the method includes: Setting multiple calibration dimensions for the single crystal furnace to perform the first crystal seeding based on the crystal seeding material, so as to determine corresponding multiple calibration parameters based on the calibration dimensions; different calibration dimensions correspond to different calibration calculation methods and different crystal seeding calibration environments; Building a target crystal seeding calibration environment for the single crystal furnace in the target calibration dimension to obtain multiple parameter data corresponding to the multiple calibration parameters and the change data of the multiple parameter data within the target calibration time; Controlling the target calibration calculation method corresponding to the target calibration dimension to calculate the change data to obtain corresponding target calibration parameter data; Writing the target calibration parameter data corresponding to the target calibration dimension into the calibration system, so as to control the single crystal furnace to perform the first crystal seeding on the crystal seeding material based on the target calibration parameter data based on the calibration system.

2. The method according to claim 1, characterized in that, The setting of multiple calibration dimensions for the single crystal furnace to perform the first crystal seeding based on the crystal seeding material includes: Determining multiple influencing factors affecting the crystal seeding quality result and collecting historical data corresponding to the multiple influencing factors; Screening out key influencing factors based on the historical data corresponding to the multiple influencing factors and mapping the key influencing factors to calibration dimensions.

3. The method according to claim 2, characterized in that, The calibration dimension at least includes an exposure calibration dimension; The controlling the target calibration calculation method corresponding to the target calibration dimension to calculate the change data to obtain corresponding target calibration parameter data includes: Processing the change data through a preset environment calculation network in the target calibration calculation method to obtain the environmental temperature; Obtaining the current exposure in the single crystal furnace and processing the current exposure and the environmental temperature to obtain the target exposure.

4. The method according to claim 3, wherein The processing the change data through a preset environment calculation network in the target calibration calculation method to obtain the environmental temperature includes: Obtaining multiple sub-influencing factors that affect the exposure and corresponding sub-calculation networks of the crystal seeding material; Combining the sub-calculation networks corresponding to the multiple sub-influencing factors to obtain the preset environment calculation network.

5. The method according to claim 2, wherein The calibration dimension at least includes a power calibration dimension; The controlling the target calibration calculation method corresponding to the target calibration dimension to calculate the change data to obtain corresponding target calibration parameter data includes: Making a judgment based on the temperature change data of the crystal seeding material in the target stage to obtain a judgment result; Based on the judgment result, calling the target calibration calculation method to calculate the crystal seeding power of the single crystal furnace to obtain the target crystal seeding power.

6. The method according to claim 5, wherein After the calling the target calibration calculation method to calculate the crystal seeding power to obtain the target crystal seeding power, it includes: Controlling the single crystal furnace to execute the crystal seeding power and obtaining the temperature change data after the target calibration time; Making a judgment based on the temperature change data to calibrate the crystal seeding power until the temperature change data meets the preset calibration end condition.

7. The method according to claim 1, characterized in that The controlling the single crystal furnace to perform crystal seeding on the crystal seeding material based on the target calibration parameter data based on the calibration system includes: Controlling the single crystal furnace to perform parameter setting and crystal seeding based on the target calibration parameter data corresponding to multiple calibration dimensions provided by the calibration system. Evaluate the seeding quality of the single crystal furnace after the seeding is completed, and determine the calibration quality of the calibration system based on the seeding quality.

8. A calibration device for the first crystal seeding of a single crystal furnace, characterized in that, Applied to a calibration system, the device includes: A setting module, configured to set multiple calibration dimensions for the first seeding of the single crystal furnace based on the seeding material, and determine corresponding multiple calibration parameters based on the calibration dimensions; different calibration dimensions correspond to different calibration calculation methods and different seeding calibration environments; A building module, configured to build a target seeding calibration environment for the single crystal furnace in the target calibration dimension, so as to obtain multiple parameter data corresponding to the multiple calibration parameters and the change data of the multiple parameter data within the target calibration time; A control module, configured to control the target calibration calculation method corresponding to the target calibration dimension to calculate the change data, and obtain corresponding target calibration parameter data; A seeding module, configured to write the target calibration parameter data corresponding to the target calibration dimension into the calibration system, so as to control the single crystal furnace to perform the first seeding on the seeding material based on the target calibration parameter data based on the calibration system.

9. An electronic device, characterized in that, It includes: A processor, a memory and a bus. The memory stores machine-readable instructions executable by the processor. When the electronic device runs, the processor communicates with the memory through the bus. When the machine-readable instructions are executed by the processor, the steps of a method for calibrating the first seeding of a single crystal furnace according to any one of claims 1 to 7 are executed.

10. A computer-readable storage medium, characterized in that, A computer program is stored on the computer-readable storage medium. When the computer program is run by the processor, the steps of a method for calibrating the first seeding of a single crystal furnace according to any one of claims 1 to 7 are executed.

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