Substrate processing system including gas delivery system with reduced blind tube section

Abstract

A gas delivery system includes a 2-way valve including a first valve disposed between a first port and a second port. The 4-way valve includes a first node connected to a first port and a second port. The bypass path is disposed between the third port and the fourth port. A second node is disposed along the bypass path. The second valve is disposed between the first node and the second node. A manifold block defines a gas flow channel configured to connect the first port of the 4-way valve to a first inlet, configured to connect the second port of the 4-way valve to the first port of the 2-way valve, connected the third port of the 4-way valve to a second inlet, and configured to connect the second port of the 2-way valve to a second inlet. The second port of the 2-way valve is connected to a first outlet, and the fourth port of the 4-way valve is connected to a second outlet.

Description

This application is a divisional application of the application with application number 201980026700.9, application date April 16, 2019, and invention title "Substrate Processing System Comprising a Gas Delivery System with Reduced Dead Legs". Cross - Reference to Related Applications

[0001] This application claims the priority of U.S. Patent Application No. 15 / 956,296, filed on April 18, 2018. The entire disclosure of the above application is incorporated herein by reference. Technical Field

[0002] The present disclosure relates to substrate processing systems, and more particularly to gas delivery systems for substrate processing systems that include reduced dead legs. Background Art

[0003] The background description provided herein is for the purpose of generally presenting the background of the disclosure. The work of the currently named inventors is neither expressly nor impliedly admitted to be prior art to the disclosure in the respect described in this background art section and in the aspects of the description that cannot be determined to be prior art at the time of the filing of the application.

[0004] Substrate processing systems for performing deposition and / or etching generally include a processing chamber having a pedestal. A substrate, such as a semiconductor wafer, can be placed on the pedestal during processing. A processing gas mixture including one or more precursors can be introduced into the processing chamber to deposit a thin film on the substrate or etch the substrate. In some substrate processing systems, a radio - frequency (RF) plasma can be ignited in the processing chamber and / or an RF bias on the pedestal can be used to activate chemical reactions.

[0005] Various gas flow paths in the gas delivery system are used to deliver processing gases, carrier gases, oxidation gases, precursor gases, and / or purge gases to the processing chamber. The gas flow paths are defined by passage tubes, valves, manifolds, and gas flow channels in the valve inlet block. During a portion of the processing, gases can be delivered through the gas flow channels; during other portions of the processing, gases may not be delivered. In other words, gases, such as vaporized precursor gases, can be temporarily retained in the gas flow channels unless a purge process is performed to clear the gas flow channels. The portion of the gas flow channel that houses the stagnant gas is referred to as a dead leg. The stagnant gas in the dead leg may decompose and cause defects on the substrate. Summary of the Invention

[0006] A gas delivery system for a substrate processing system includes a two-way valve that includes: a first port and a second port; and a first valve disposed between the first port and the second port. A four-way valve includes: a first port, a second port, a third port, and a fourth port. A first node is connected to the first port and the second port. A bypass path is disposed between the third port and the fourth port. A second node is disposed along the bypass path between the third port and the fourth port. A second valve is disposed between the first node and the second node. A manifold block defines gas flow channels that are configured to connect the first port of the four-way valve to a first inlet; configured to connect the second port of the four-way valve to the first port of the two-way valve; configured to connect the third port of the four-way valve to a second inlet; configured to connect the second port of the two-way valve to a first outlet; and configured to connect the fourth port of the four-way valve to a second outlet.

[0007] Among other features, the gas delivery system includes: a first gas source; a second gas source; a manifold connected to the first inlet of the manifold. A third valve selectively connects the first gas source to the manifold. A fourth valve selectively connects the second gas source to the manifold.

[0008] Among other features, the first gas source supplies a propellant gas, the second gas source supplies a dopant gas, and the second outlet is connected to a processing chamber. The dopant gas source includes an ampoule that supplies a vaporizable precursor.

[0009] Among other features, the gas delivery system further includes: a controller configured to set the states of the first valve, the second valve, the third valve, and the fourth valve in a divert mode. During the divert mode, the first valve is open, the second valve is closed, the third valve is open, and the fourth valve is closed.

[0010] Among other features, the controller is further configured to set the states of the first valve, the second valve, the third valve, and the fourth valve in a dispense mode after the divert mode. During the dispense mode, the first valve is closed, the second valve is open, the third valve is open, and the fourth valve is open.

[0011] Among other features, during the dispense mode, a dead leg section is created between the first node and the inlet of the first valve. The dead leg section defines a volume less than 2.5 ml. There is no dead leg section volume during the divert mode.

[0012] A substrate processing system includes: a processing chamber that includes a gas distribution device connected to the first outlet of the manifold of the gas delivery system; a substrate support; and an RF generator. A controller is configured to ignite a plasma between the gas distribution device and the substrate support during a dispense mode.

[0013] A gas delivery system for a substrate processing system includes a first three-way valve that includes: a first port, a second port, a third port, a bypass path, and a first node. A first valve is disposed between the second port and the first node. The bypass path and the first node are disposed between the first port and the third port. The gas delivery system includes a second three-way valve that includes: a first port, a second port, a third port, a second node, and a bypass path. A second valve is disposed between the first port and the second node. The bypass path and the second node are disposed between the second port and the third port. A manifold block defines gas flow channels that are configured to connect the first port of the first three-way valve to a first inlet; configured to connect the second port of the first three-way valve to a first outlet; configured to connect the second port of the second three-way valve to a second inlet; configured to connect the third port of the first three-way valve to the first port of the second three-way valve; and configured to connect the third port of the second three-way valve to a second outlet.

[0014] In other features, the gas delivery system further includes: a first gas source; a second gas source; a manifold connected to the first port of the first three-way valve; a third valve that selectively connects the first gas source to the manifold; and a fourth valve that selectively connects the second gas source to the manifold.

[0015] In other features, the first gas source supplies a propellant gas, the second gas source supplies a recipe gas, and the second outlet is connected to the processing chamber.

[0016] In other features, the controller is configured to control the first valve, the second valve, the third valve, and the fourth valve to a divert mode. During the divert mode (Suring), the first valve is open, the second valve is closed, the third valve is open, and the fourth valve is closed.

[0017] In other features, the controller is further configured to control the first valve, the second valve, the third valve, and the fourth valve in a dispense mode after the divert mode. During the dispense mode, the first valve is closed, the second valve is open, the third valve is open, and the fourth valve is open.

[0018] Among other features, a dead-end section is created between the first node and the inlet of the second valve. The dead-end section is created during the switching mode. The dopant gas source includes an ampoule that supplies a vaporizable precursor. The dead-end section defines a volume of less than 2.5 ml.

[0019] A substrate processing system includes: a processing chamber that includes a gas distribution device connected to the first outlet of the gas delivery system; a substrate support; and an RF generator. A controller is configured to ignite a plasma between the gas distribution device and the substrate support during dosing.

[0020] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are provided for illustrative purposes only and are not intended to limit the scope of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The present disclosure will be more fully understood from the detailed description and the drawings, in which:

[0022] Figure 1 is a functional block diagram of an example of a substrate processing system according to the present disclosure;

[0023] FIG. 2 is a perspective view of an example of a gas delivery assembly according to the prior art;

[0024] Figure 3 is a schematic view of an example of a first valve assembly of a gas delivery system including two three-way valves; and

[0025] Figure 4 is Figure 3 a schematic view of the example of the first valve assembly during a switching portion of a recipe;

[0026] Figure 5 is Figure 3 a schematic view of the example of the first valve assembly during a dosing portion of a recipe;

[0027] Figure 6 is a perspective view showing Figure 3 an example of a valve manifold and valve inlets of the first valve assembly;

[0028] Figure 7 is a schematic view of an example of a second valve assembly for a gas delivery system, the second valve assembly including a four-way valve connected to a two-way valve: and

[0029] Figure 8A and 8B is Figure 7 a schematic view of the example of the second valve assembly during a switching portion of a recipe;

[0030] Figure 9 An Figure 7 example of a second valve assembly during the dispensing portion of a recipe; and

[0031] Figure 10 A perspective view showing an example of a valve manifold and valve inlets of a second valve assembly of Figure 7 ; and

[0032] Figure 11 A timing diagram of operating valves in first and second valve assemblies of Figure 3 and 7 .

[0033] In the drawings, reference numerals may be reused to identify similar and / or identical elements. DETAILED DESCRIPTION

[0034] Configurations of several valve assemblies according to the present disclosure significantly reduce defects during substrate processing by reducing the volume of dead-end segments when delivering a process gas mixture such as a precursor gas and / or vaporized precursor. In a first valve assembly, a combination of two 3-way valves is used to reduce the volume of dead-end segments. In a second valve assembly, a combination of a 4-way valve and a 2-way valve is used to reduce the volume of dead-end segments.

[0035] Now referring to Figure 1 , an example of a substrate processing system 100 includes a processing chamber 112 having a reaction volume. In some examples, plasma-enhanced chemical vapor deposition (CVD) or plasma-enhanced atomic layer deposition (ALD) processes may be performed, but other etching, deposition, or other substrate processing may also be performed.

[0036] A gas distribution device 114, such as a showerhead, may be used to supply a process gas mixture to the processing chamber 112. In some examples, the showerhead is a pendant-type showerhead. A substrate 118, such as a semiconductor wafer, may be disposed on a substrate support 116 during processing. The substrate support 116 may include a pedestal, an electrostatic chuck, a mechanical chuck, or other types of substrate supports.

[0037] One or more gas delivery systems 120-1, 120-2, 120-3, … may include one or more gas sources 122-1, 122-2, …, and 122-N (collectively gas sources 122), where N is an integer greater than 1. Valves 124-1, 124-2, …, and 124-N (collectively valves 124), mass flow controllers 126-1, 126-2, …, and 126-N (collectively mass flow controllers 126), or other flow control devices may be used to controllably supply one or more gases to a manifold 130, which supplies a gas mixture to a processing chamber 112 via valve V46, manifold 131, and valve V164. In some examples, manifold 131 is a heated injector manifold. One or more additional gas delivery systems may be provided to supply gases or gas mixtures at other locations. A divert path including valve V166 selectively diverts gases to a vacuum or exhaust device.

[0038] A controller 140 may be used (using one or more sensors 141) to monitor processing parameters such as temperature, pressure, etc. and control the processing timing. The controller 140 may be used to control processing devices such as gas delivery systems 120-1, 120-2, and 120-3, substrate support heater 142, and / or RF plasma generator 146. The controller 140 may also be used to pump down the processing chamber 112 using valves 150 and pump 152.

[0039] An RF plasma generator 146 generates an RF plasma in the processing chamber. The RF plasma generator 146 may be an inductive or capacitive RF plasma generator. In some examples, the RF plasma generator 146 may include an RF power supply 160 and a matching and distribution network 162. Although the RF plasma generator 146 is shown connected to the gas distribution device 114 and the substrate support is grounded or floating, the RF plasma generator 146 may be connected to the substrate support 116 and the gas distribution device 114 may be grounded or floating.

[0040] A vaporized precursor may be supplied to manifold 131 through an ampoule 190, which supplies a vaporized liquid precursor. A carrier gas 180 is supplied through valves 182, MFC 184, and valve 186. Additional valves V213, V205, V214, and V55 control the delivery of the carrier gas and / or the delivery of the carrier gas and vaporized precursor from the ampoule 190. In some examples, the ampoule 190 is heated by a heater 194. The ampoule 190 may also include one or more temperature sensors 192 to detect the temperature of the precursor liquid in the ampoule 190. The controller 140 may be used to sense the temperature of the precursor liquid and control the heater 194 to heat the precursor liquid to a predetermined temperature.

[0041] It can be understood that when valve V213 is closed and valves V205 and V214 are open, the carrier gas flows through ampoule 190 and entrains the vaporized precursor. The mixture of the carrier gas and the vaporized precursor is transported to manifold 131 through valve V55 and to gas distribution device 114 through valve V164. In some examples, gas delivery system 120-2 delivers the gas mixture to manifold 196, and valves V44 and V165 control the delivery of the gas to the processing chamber. In some examples, valve V162 provides a secondary purge gas mixture to the stem of the showerhead. In some examples, gas delivery system 120-3 delivers gas to manifold 198, and valves V69 and V167 control the delivery of the gas to a vacuum, exhaust, or processing chamber.

[0042] Referring now to FIG. 2, the gas delivery assembly 200 shown includes one or more valve assemblies 220-1, 220-2... and 220-4 (collectively referred to as valve assemblies 220) and valve manifold 228. The valve assemblies 220 are configured to control the flow of fluid into and out of valve manifold 228. In this regard, valve manifold 228 includes a body 274 that defines one or more gas channels 276-1, 276-2..... and 276-N (collectively referred to as gas channels 276); first, second, and third inlets 278, 280, 282; and first and second outlets 284, 285.

[0043] The first gas channel 276-1 extends from the first inlet 278 of valve manifold 228 and the second valve assembly 220-2 and is in fluid communication with the first inlet 278 and the second valve assembly 220-2. The second gas channel 276-2 extends from the first gas channel 276-1 to the first valve assembly 220-1. The third gas channel 276-3 extends from the first valve assembly 220-1 to the first outlet 284 of valve manifold 228. The fourth gas channel 276-4 extends from the second valve assembly 220-2 to the second outlet 285 of valve manifold 228.

[0044] The gas delivery assembly 200 operates in at least three modes, such as a divert mode, a supply mode, and a standby mode. The gas delivery assembly 200 can operate in a continuous cycle such that the divert mode is before the supply mode; the supply mode is before the standby mode; and the standby mode is before the divert mode. In the divert mode, the stale precursor in the gas channels 276 can be replaced with fresh precursor. In the supply mode, the vaporized precursor is supplied to the processing chamber. In the standby mode, no vaporized precursor is supplied and the vaporized precursor is not diverted.

[0045] When supplying the vaporized precursor, the first valve assembly 220-1 is closed and the second valve assembly 220-2 is open. The vaporized precursor gas is supplied from the first inlet 278 and passes through the first gas passage 276-1 to the second valve assembly 220-2. The vaporized precursor gas flows through the second valve assembly 220-2 and the fourth gas passage 276-4 to the processing chamber or other parts of the substrate processing system.

[0046] During the standby mode, the first and second valve assemblies 220-1, 220-2 are closed to prevent the flow of the vaporized precursor from the first inlet 278. Thus, during the standby mode, the vaporized precursor gas remains in the first gas passage 276-1. Under some conditions, the trapped vaporized precursor in the first gas passage 276-1 may condense into particles. The trapped vaporized precursor entering the processing chamber later may cause defects.

[0047] Before supplying the vaporized precursor to the processing chamber in the supply mode, the vaporized precursor is diverted and removed so that the stale vaporized precursor in the gas passage 276-1 is replaced by fresh precursor. When diverting the vaporized precursor, the first valve assembly 220-1 is open and the second valve assembly 220-2 is closed. When the vaporized precursor gas is supplied from the first inlet 278 through the first gas passage 276-1, the vaporized precursor gas passes through the second gas passage 276-2, the first valve assembly 220-1 and the third gas passage 276-3 and flows out of the valve manifold 228.

[0048] Although the diversion mode provides some improvements, not all of the stale vaporized precursor is removed. The gas delivery assembly 200 has a blind section space 290 which is located downstream of the second gas passage 276-2 and upstream of the second valve assembly 220-2. Specifically, the vaporized precursor stagnating in the blind section space during the standby mode is not diverted and does not pass through the first valve assembly 220-1 during the diversion mode. The vaporized precursor trapped in the blind section space 290 during the diversion mode still flows into the processing chamber from the first and fourth gas passages 276-1, 276-4 during the supply mode and causes defects in the substrate.

[0049] Now refer to Figure 3 , the first valve assembly 300 for the gas delivery system includes a first three-way valve 302 and a second three-way valve 304. The first three-way valve 302 includes a first port that receives gas from the outlet of the manifold 131. The first port is connected to the bypass path 330 and the first node 310. The second port (or diversion path 320) of the first three-way valve 302 passes through the first valve V166A and is connected to the first node 310 (valve control path 332). The third port is connected to the bypass path 330 and the first node 310.

[0050] The first port of the second three-way valve 304 is connected to the second node 314 through the valve control path 342 and through the second valve V164A. The second port of the second three-way valve 304 supplies a gas, such as a propellant gas, and is connected to the bypass path 340 and the second node 314. The third port is connected to the bypass path 340 and the second node 314. The third port is connected to the processing chamber.

[0051] Now refer to Figure 4 , showing the first valve assembly 300 in the diversion mode. Valve V46 supplies gas through the manifold 131 (and closes the valve V55 leading to the ampoule 190). The gas delivered to the first port of the first three-way valve 302 is diverted at the first node 310 and passes through the first valve V166A. The second three-way valve 304 is closed. A blind tube section is created between the first node 310 and the inlet of the second valve V164A.

[0052] Now refer to Figure 5 , showing the first valve assembly 300 during the dispensing mode. Valve V46 supplies gas through the manifold 131 (and opens the valve V55 leading to the ampoule 190). The vaporized precursor gas mixture from the ampoule 190 is delivered to the first port of the first three-way valve 302 and is diverted at the first node 310 without passing through the first valve V166A (which is closed). Instead, the vaporized precursor gas mixture is delivered to the first port of the second three-way valve 304 (the second valve V164A is open) to the second node 314. A mixture of the propellant gas and the vaporized precursor is delivered to the processing chamber.

[0053] In some examples, the valve assembly 300 defines a very small volume between the first node 310 and the inlet of the second valve V164A. In some examples, the volume is less than 4 ml. In some examples, the volume is less than 3 ml. In other examples, the volume is 2.3 ml. The ingredient flow to the processing chamber passes through the first valve V166A and the second valve V164A respectively. The flow to the processing chamber expands out from the second valve V164A and into the inert flow from the manifold 198. During the diversion step, the portion between the first valve V166A and the second valve V164A is not purged. During the dispensing step, the portion between the first valve V166A and the second valve V164A is purged to the processing chamber.

[0054] Now refer to Figure 6, a part of the first valve assembly is shown to include a valve manifold block 610 and a valve inlet 600 which are the first three-way valve 302 and the second three-way valve 304 respectively. The valve manifold block 610 defines a first channel 620 which connects the first port of the first three-way valve 302 and the ampoule 190. The valve manifold block 610 defines a second channel 624 which connects the second port of the first three-way valve 302 to the diversion path 320. The valve manifold block 610 defines a third channel 630 which connects the third port of the first three-way valve 302 to the first port of the second three-way valve 304. The valve manifold block 610 defines a fourth channel 636 which connects the manifold 198 to the second port of the second three-way valve 304. The valve manifold block 610 defines a fifth channel 632 which connects the third port of the second three-way valve 304 to the processing chamber.

[0055] Now referring to Figure 7 , the second valve assembly 700 includes a two-way valve 702 and a four-way valve 704. The two-way valve 702 includes a first port which receives gas from the outlet of the manifold 131 through the first node 710 of the four-way valve 704. The second port of the two-way valve 702 is connected to the diversion path 720. The first valve V166B is disposed between the first and second ports of the two-way valve 702.

[0056] The four-way valve 704 includes a first port which is connected to the manifold 131 and the first node 710. The second port of the four-way valve 704 connects the first node 710 to the first port of the two-way valve 702. The first node 710 is connected to the second valve V164B of the four-way valve 704. The third port of the four-way valve 704 receives gas, such as propelling gas, from the manifold 198 and is connected to the second node 714. The fourth port of the four-way valve 704 connects the second node 714 to the processing chamber. The four-way valve 704 includes a bypass path 730 and a valve control path 732. The second valve V164B selectively allows or blocks the flow from the first node 710 to the second node 714.

[0057] As Figure 7 can be seen, the first port of the four-way valve 704 is connected to the valve control path 732 (at the first node 710) at an angle 760 with respect to the path of the valve control path 732. The second node of the four-way valve 704 is connected at an angle 762 with respect to the first path. In some examples, the angle 760 is an acute angle greater than zero. In some examples, the angle 760 is greater than zero and less than 45 degrees. In some examples, the angle 762 is greater than the angle 760. In some examples, the angle 762 is greater than 60 degrees and less than 120 degrees. In some examples, the angle 762 is greater than 70 degrees and less than 100 degrees.

[0058] Now referring to Figure 8A and8B , the second valve assembly 700 is shown during two exemplary steering modes. In Figure 8A , valve V46 supplies gas through manifold 131 (and closes valve V55 leading to ampoule 190). The gas is delivered to the first port of a four-way valve 704 (which includes a closed second valve V164B). The gas passes through first node 710 and exits from the second port of four-way valve 704 to the first port of two-way valve 702. The first valve V166B of two-way valve 702 is opened, so that the gas flows through two-way valve 702 to steering path 720.

[0059] In Figure 8B , valve V46 supplies gas to pass through manifold 131 (valves V213 and V55 are open and V205 and V214 are closed). The propellant gas and the carrier gas are delivered to the first port of four-way valve 704 (which includes a closed second valve V164A). The gas passes through first node 710 and exits from the second port of four-way valve 704 to the first port of two-way valve 702. The first valve V166B of two-way valve 702 is opened, allowing the gas to flow through two-way valve 702 to steering path 720.

[0060] In Figure 8A and 8B , during the steering mode, the volume of the blind tube section of the second valve assembly 700 is zero. In some examples, the internal channels of the four-way valve intersect at an angle, in contrast to conventional valves that have straight or parallel internal channels.

[0061] Now refer to Figure 9 , the second valve assembly 700 is shown during a dispensing operation. Valve V46 supplies gas to pass through manifold 131 (and opens valve V55 leading to ampoule 190). The vaporized precursor gas mixture delivered to the first port of four-way valve 704 does not turn at first node 710 (because the first valve V166B is closed). Instead, the vaporized precursor gas mixture (through the open second valve V164B) is delivered to the inlet of four-way valve 704 and then to second node 714. The mixture of propellant gas and vaporized precursor is delivered to the processing chamber. A blind tube section is created during dispensing between first node 710 and the inlet of the first valve V166B.

[0062] Now refer to Figure 10, a portion of the second valve assembly is shown including a valve manifold block 1000 and a valve inlet 1004 leading to a two-way valve 702 and a four-way valve 704 respectively. The valve manifold block 1000 defines a first channel 1010 that connects to the second port of the two-way valve 702. The valve manifold block 1000 defines a second channel 1020 that connects the first port of the two-way valve 702 to the first port of the four-way valve 704. The valve manifold block 1000 defines a third channel 1050 (receiving ingredient gas and carrier gas) that connects to the first port of the four-way valve 704. The valve manifold block 1000 defines a fourth channel 1040 (receiving propellant gas) that connects to the third port of the four-way valve 704. The valve manifold block 1000 defines a fifth channel 1030 (directing gas to the processing chamber) that connects to the fourth port of the four-way valve 704.

[0063] In some examples, the second valve assembly 700 defines a very small volume between the first node 710 and the inlet of the first valve V166B. In some examples, the volume is less than 4 ml. In some examples, the volume is less than 3 ml. In other examples, the volume is 2.3 ml. Different from the first valve assembly 300, the ingredient flow of the second valve assembly 700 flowing to the processing chamber passes through one valve (the second valve V164B). The flow to the processing chamber expands from the central port to the inflation chamber. During the turning step, the blind tube section is cleared. During the dosing step, gas is trapped in the blind tube section.

[0064] Now refer to Figure 11 , which shows a timing diagram of operating valves using the first valve assembly 300 and the second valve assembly 700 respectively. Although specific values of the switching time periods are shown, other time periods can be used. During the soak time period, the first gas mixture from the manifold is supplied to the processing chamber using the second valve V164. During the turning time period including LCD1 and LCD2, the second valve V164 is closed and the first valve V166 is opened. During LCD1, the valve V213 is opened to supply propellant gas. During LCD2, the valve V213 is closed and the valves V205, V214 and V55 are opened to supply vaporized precursors. In some examples, the time period of LCD1 is 1.5 s and the time period of LCD2 is 1.5 s.

[0065] During the first stage of the ingredient time period, the valves V205, V214 and V55 remain open. During the first and second stages of the dosing time period, the valve V166 is closed and V164 is opened. The duration of the first stage depends on the gas transportation time, which is 0.05 s in certain examples. In some examples, the duration of the second stage is 0.2 s. After dosing, the valve V166 is opened and the valve V164 is closed.

[0066] The foregoing description is merely illustrative in nature and is in no way intended to limit the present disclosure, its application, or uses. The broad teachings of the present disclosure can be implemented in a variety of forms. Thus, while the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited since other modifications will become apparent upon study of the drawings, the specification, and the appended claims. It should be understood that one or more steps in a method can be performed in a different order (or concurrently) without changing the principles of the present disclosure. Further, while each embodiment has been described above as having certain features, any one or more of those features described with respect to any embodiment of the present disclosure can be implemented in and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more of the embodiments with each other remain within the scope of the present disclosure.

[0067] Various terms are used to describe spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), and the various terms include "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless a relationship between a first and a second element is explicitly described as "direct," when such a relationship is described in the foregoing disclosure, the relationship can be a direct relationship in which no other intervening element exists between the first and second elements, but can also be an indirect relationship in which one or more intervening elements exist (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be construed to mean a logical (A or B or C) using a non-exclusive logical OR, and should not be construed to mean "at least one of A, at least one of B, and at least one of C."

[0068] In some implementations, the controller is part of a system, which can be part of the above examples. Such systems can include semiconductor processing apparatuses, which include one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer chucks, gas flow systems, etc.). These systems can be integrated with electronics for controlling their operations before, during, and after the processing of semiconductor wafers or substrates. The electronics can be referred to as a “controller,” which can control various components or sub-components of one or more systems. Depending on the processing requirements and / or the type of system, the controller can be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer into and out of tools and other transfer tools, and / or load locks coupled or interfaced to a particular system.

[0069] Broadly speaking, a controller can be defined as electronics having various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, enabling endpoint measurements, etc. The integrated circuits can include chips in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers executing program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files), the individual settings (or program files) defining operation parameters for performing a specific process on or with respect to a semiconductor wafer or system. In some embodiments, the operation parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or die of a wafer.

[0070] In some implementations, the controller can be part of or coupled to a computer that is integrated with, coupled to, otherwise networked to the system, or a combination thereof. For example, the controller can be in the "cloud" or be all or part of a wafer fab host system, which can allow remote access to wafer processing. The computer can implement remote access to the system to monitor the current progress of a manufacturing operation, examine the history of past manufacturing operations, examine trends or performance criteria for multiple manufacturing operations, change parameters of the current process, set process steps to follow the current process, or initiate a new process. In some examples, a remote computer (e.g., a server) can provide a process recipe to the system via a network, which can include a local network or the Internet. The remote computer can include a user interface that enables the input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify the parameters for each process step to be performed during one or more operations. It should be understood that the parameters can be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller can be distributed, for example, by including one or more discrete controllers that are networked together and work towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber that communicate with one or more integrated circuits remote (e.g., at the platform level or as part of a remote computer), which combine to control the process on the chamber.

[0071] Example systems can include, but are not limited to, a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, an orbit chamber or module, and any other semiconductor processing system that can be associated with or used for the manufacture and / or preparation of semiconductor wafers.

[0072] As described above, depending on one or more process steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in the material transport that shuttles the wafer container to and from the tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A gas delivery system for a substrate processing system, comprising: A two-way valve, comprising: A first port and a second port; and A first valve disposed between the first port and the second port; A four-way valve, comprising: A first port, a second port, a third port, and a fourth port; A first node connected to the first port and the second port; A bypass path disposed between the third port and the fourth port; A second node disposed along the bypass path between the third port and the fourth port; and A second valve disposed between the first node and the second node; and A manifold block defining a gas flow channel configured to: Connect the first port of the four-way valve to a first inlet; Connect the second port of the four-way valve to the first port of the two-way valve; Connect the third port of the four-way valve to a second inlet; Connect the second port of the two-way valve to a first outlet; and Connect the fourth port of the four-way valve to a second outlet; Wherein the second port of the four-way valve is connected to the first port of the four-way valve at an angle between 60 and 120 degrees at the first node.

2. The gas delivery system according to claim 1, further comprising: A first gas source; A second gas source; A manifold connected to the first inlet; A third valve selectively connecting the first gas source to the manifold; And A fourth valve selectively connecting the second gas source to the manifold.

3. The gas delivery system according to claim 2, wherein the first gas source supplies a propellant gas, the second gas source supplies a dopant gas, and the second outlet is connected to a processing chamber.

4. The gas delivery system according to claim 3, wherein the second gas source includes an ampoule for supplying a vaporized precursor.

5. The gas delivery system according to claim 2, further comprising: A controller configured to set the states of the first valve, the second valve, the third valve, and the fourth valve in a divert mode, wherein during the divert mode, the first valve is open, the second valve is closed, the third valve is open, and the fourth valve is closed; And Wherein a first gas from the first gas source is diverted from the second outlet to the first outlet.

6. The gas delivery system according to claim 5, wherein the controller is further configured to set the states of the first valve, the second valve, the third valve, and the fourth valve in a dispense mode after the divert mode, wherein during the dispense mode, the first valve is closed, the second valve is open, the third valve is open, and the fourth valve is open, and wherein during a dispense operation, a first gas and a second gas from the first gas source and the second gas source are delivered to the second outlet connected to the processing chamber.

7. The gas delivery system according to claim 6, wherein during the dispense mode, a dead leg section is created between the first node and the inlet of the first valve.

8. The gas delivery system according to claim 7, wherein the blind tube section defines a volume of less than 2.5 ml.

9. The gas delivery system according to claim 5, wherein there is no blind tube section volume during the turning mode.

10. A substrate processing system, comprising: A processing chamber including a gas distribution device connected to the first outlet of the gas delivery system as claimed in claim 1; A substrate support; An RF generator; And A controller configured to ignite a plasma between the gas distribution device and the substrate support during a dosing mode.

11. A gas delivery system for a substrate processing system, comprising: A two-way valve including: A first port and a second port; and A first valve disposed between the first port and the second port; A four-way valve including: A first port, a second port, a third port, and a fourth port; A first node connected to the first port and the second port; A bypass path disposed between the third port and the fourth port; A second node disposed along the bypass path between the third port and the fourth port; and A second valve disposed between the first node and the second node; and A manifold block defining a gas flow channel configured to connect the two-way valve and the four-way valve to a first inlet, a second inlet, a first outlet, and a second outlet; Wherein the second port of the four-way valve is connected to the first port of the four-way valve at an angle between 60 and 120 degrees at the first node.

12. The gas delivery system according to claim 11, further comprising: A first gas source; A second gas source; A manifold connected to the first inlet; A third valve selectively connecting the first gas source to the manifold; And A fourth valve selectively connecting the second gas source to the manifold.

13. The gas delivery system according to claim 12, wherein the first gas source supplies a propellant gas, the second gas source supplies a dopant gas, and the second outlet is connected to a processing chamber.

14. The gas delivery system according to claim 13, wherein the second gas source includes an ampoule for supplying a vaporized precursor.

15. The gas delivery system according to claim 12, further comprising: A controller configured to set the states of the first valve, the second valve, the third valve, and the fourth valve in a turning mode, wherein during the turning mode, the first valve is open, the second valve is closed, the third valve is open, and the fourth valve is closed; And Wherein a first gas from the first gas source is diverted from the second outlet to the first outlet.

16. The gas delivery system according to claim 15, wherein the controller is further configured to set the states of the first valve, the second valve, the third valve, and the fourth valve in a dispensing mode after the switching mode, wherein during the dispensing mode, the first valve is closed, the second valve is open, the third valve is open, and the fourth valve is open, and wherein during a dispensing operation, a first gas and a second gas from the first gas source and the second gas source are delivered to the second outlet connected to the processing chamber.

17. The gas delivery system according to claim 16, wherein during the dispensing mode, a dead-end section is created between the first node and the inlet of the first valve.

18. The gas delivery system according to claim 17, wherein the dead-end section defines a volume of less than 2.5 ml.

19. The gas delivery system according to claim 15, wherein there is no dead-end section volume during the switching mode.

20. A substrate processing system, comprising: a processing chamber including a gas distribution device connected to the first outlet of the gas delivery system according to claim 11; a substrate support; an RF generator; and a controller configured to ignite a plasma between the gas distribution device and the substrate support during a dispensing mode.

21. The gas delivery system according to claim 11, wherein the gas flow channel is configured to: connect the first port of the four-way valve to the first inlet; connect the second port of the four-way valve to the first port of the two-way valve; connect the third port of the four-way valve to the second inlet; connect the second port of the two-way valve to the first outlet; and connect the fourth port of the four-way valve to the second outlet.

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