Ni-63 graphene radiovolt isotope battery and preparation method thereof

Abstract

The invention discloses a Ni-63 graphene radiovolt isotope battery and a preparation method thereof, and belongs to the technical field of micro energy, the battery comprises at least one group of semiconductor energy conversion units with sandwich structures; the semiconductor energy conversion unit of the sandwich structure comprises a Ni-63 graphene radioactive source layer and semiconductor material layers located on the upper side and the lower side of the Ni-63 graphene radioactive source layer. The Ni-63 graphene radioactive source layer comprises a Ni-63 radioactive source layer and graphene layers wrapping the upper side and the lower side of the Ni-63 radioactive source layer; and the Ni-63 graphene radioactive source layer and the semiconductor material layers which are adjacently arranged on the upper side and the lower side respectively form Schottky or heterojunction. According to the scheme, the Ni-63 radioactive source is wrapped by graphene to enhance the supporting strength of the radioactive source, and meanwhile, the utilization rate of the radioactive source is increased by pressing the semiconductor energy conversion unit with the sandwich structure, so that the energy conversion efficiency of a battery device is improved; and the carrier collection efficiency and the power density of the cell device are improved by designing a gradient doped semiconductor layer and a lamination design.

Description

Technical Field

[0001] The present invention belongs to the technical field of micro energy, and relates to a Ni-63 graphene radioisotope battery and a preparation method thereof. Background Art

[0002] With the development of microelectronic devices and Internet of Things terminals towards miniaturization and low power consumption, the demand for long-life and maintenance-free micro energy systems is becoming increasingly urgent. Isotope batteries convert the energy of β particles released by the decay of radioactive isotopes into electrical energy, and have the unique advantages of long life (related to the half-life of isotopes) and strong environmental adaptability. Among them, the isotope battery based on the radiovoltaic effect generates electron-hole pairs by semiconductor materials absorbing β particles (electrons), and forms an electric current through the separation of the built-in electric field, which is one of the mainstream technical routes for realizing efficient energy conversion. However, the current energy conversion efficiency and electrical output performance of radiovoltaic isotope batteries are not very ideal, and it is difficult to meet the requirements of the micro energy system for its output power.

[0003] Nickel-63 (Ni-63) is an ideal isotope radiation source with the advantages of long half-life (about 100 years), high radiation safety (no heavy shielding is required), and good chemical stability. In recent years, carbon-based materials have been introduced into the field of radiovoltaic isotope batteries due to their excellent physical and chemical properties. Especially, graphene, as a representative of two-dimensional layered materials, will naturally form a metal-semiconductor junction when it contacts with a semiconductor material as a semi-metal, and has been widely studied and applied in the field of energy conversion. Summary of the Invention

[0004] The first object of the present invention is to provide a Ni-63 graphene radioisotope battery for the above problems existing in the prior art. The technical problem to be solved by the present invention is to provide an isotope battery with high-efficiency energy conversion and high output power density.

[0005] The object of the present invention can be achieved by the following technical solutions: A Ni-63 graphene radioisotope battery, characterized in that it includes at least one group of sandwich-structured semiconductor energy conversion units. The sandwich-structured semiconductor energy conversion unit includes a Ni-63 graphene radiation source layer and semiconductor material layers on its upper and lower sides; the semiconductor material layer includes a low-concentration doped semiconductor layer, a high-concentration doped semiconductor layer, a back electrode layer, and a back electrode lead-out layer that are sequentially stacked on top of each other; the Ni-63 graphene radiation source layer includes a Ni-63 radiation source layer and graphene layers wrapped on the upper and lower sides; the Ni-63 graphene radiation source layer forms a Schottky or heterojunction with the low-concentration doped semiconductor layers adjacent to it on the upper and lower sides respectively.

[0006] Further, the thickness of the Ni-63 graphene radiation source layer is 0.01 μm - 5 μm.

[0007] Preferably, the thickness of the Ni-63 graphene radiation source layer is 0.5 μm - 2 μm.

[0008] Further, the Ni-63 graphene radiation source layer, that is, the Ni-63 radiation source layer wrapped by the graphene layer, is directly used as the upper electrode lead-out layer at the same time.

[0009] Further, the graphene layer (13) is a single-layer, double-layer, few-layer or multi-layer graphene prepared by chemical vapor deposition transferred onto the Ni-63 radiation source layer (12). Generally, the few layers of a single-atom graphene layer are 3 - 5 layers, and the multi-layers are more than 5 layers. Here, single-layer, few-layer and multi-layer are appropriate. In principle, the double-layer does not affect the implementation, but it is not the best.

[0010] Further, the low-concentration doped semiconductor layer and the high-concentration doped semiconductor layer are one of Si, GaAs, GaN, SiC, diamond, gallium oxide, boron nitride, or are wide-bandgap semiconductors or ultra-wide-bandgap semiconductors.

[0011] Further, the doping concentration of the low-concentration doped semiconductor layer is 10 12 -10 16 cm -3 , and the thickness is 0.5 μm - 50 μm;

[0012] Further, the doping concentration of the high-concentration doped semiconductor layer is not less than 10 17 cm -3 , and the thickness is 50 μm - 300 μm.

[0013] Another object of the present invention is to provide a preparation method of the above battery.

[0014] It includes the following steps:

[0015] S1. Prepare the Ni-63 radiation source layer;

[0016] S2. Prepare the Ni-63 graphene radiation source layer;

[0017] S3. Using the high-concentration doped semiconductor layer as the substrate, homoepitaxially grow the low-concentration doped semiconductor layer, and clean the prepared epitaxial wafer for standby;

[0018] S4. Deposit metal on the side of the epitaxial wafer in step S3 away from the low-concentration doped semiconductor layer to prepare the back electrode layer and the back electrode lead-out layer, and make the semiconductor material layer;

[0019] S5. Press the two semiconductor material layers prepared in step S4 and the one Ni-63 graphene radiation source layer prepared in step S2 in a sandwich structure, so that the graphene layers on both sides of the Ni-63 graphene radiation source layer are in full contact with the low-concentration doped semiconductor layers they contact respectively, forming a Schottky or heterojunction, and completing the assembly of the semiconductor energy conversion unit with a sandwich structure.

[0020] Furthermore, the Ni-63 radiation source layer in step S1 is a thin film prepared by an electrochemical method or a powder metallurgy rolling method.

[0021] Preferably, if the Ni-63 radiation source layer is prepared by an electrochemical method, the specific process is as follows: 63 Using NiCl2 as the electroplating solution, deposit the Ni-63 radiation source on the copper-based or nickel-based graphene prepared by chemical vapor deposition by direct current or alternating current electrodeposition;

[0022] Preferably, if the Ni-63 radiation source layer is prepared by a powder metallurgy rolling method, the specific process is as follows: Ni-63 is made into powder in a stable compound form, and a Ni-63 radiation source blank is made by powder metallurgy, and then rolled into a foil film Ni-63 radiation source.

[0023] Furthermore, if the Ni-63 radiation source layer in step S1 is prepared by an electrochemical method, then use the wet transfer method to directly transfer one portion of graphene to the other side of the Ni-63 radiation source layer far from the copper-based or nickel-based graphene, and then etch away the copper-based or nickel-based substrate to realize the preparation of the Ni-63 graphene radiation source layer in step S2;

[0024] Preferably, if the Ni-63 radiation source layer in step S1 is prepared by a powder metallurgy rolling method, then directly use the wet transfer method to transfer two portions of graphene to the upper and lower sides of the foil film Ni-63 radiation source layer respectively to realize the preparation of the Ni-63 graphene radiation source layer in step S2.

[0025] Furthermore, the homoepitaxial low-concentration doped semiconductor layer in step S3 includes chemical vapor deposition, plasma-enhanced chemical vapor deposition method, microwave plasma chemical vapor deposition method or molecular beam epitaxy method.

[0026] Furthermore, the back electrode layer and the back electrode lead-out layer in step S4 are one or any combination of nickel, titanium, aluminum, gold, silver, copper, tungsten, germanium, indium, gallium.

[0027] The present invention has the following advantages and beneficial effects:

[0028] 1. The present invention proposes to use graphene to wrap the Ni-63 radiation source to enhance the support strength of the radiation source, and at the same time, by pressing into a sandwich-structured semiconductor energy conversion unit to improve the utilization rate of the radiation source, thereby improving the energy conversion efficiency of the battery device;

[0029] 2. The present invention proposes to improve the carrier collection efficiency of the battery device by designing a "gradient doping" semiconductor layer, and at the same time, adopting a stacked design to further improve the power density of the device, providing an innovative technical path for the development of long-life and high-power-density nuclear batteries. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 It is a schematic diagram of the layered structure of a single-group semiconductor energy conversion unit.

[0031] Figure 2 It is a schematic diagram of the layered structure of the Ni-63 graphene radiation source layer in the semiconductor energy conversion unit.

[0032] Figure 3 It is a schematic diagram of the structure of an isotope battery formed by stacking multiple single-group semiconductor energy conversion units.

[0033] Among them, 1. Semiconductor energy conversion unit; 11. Ni-63 graphene radiation source layer; 12. Ni-63 radiation source layer; 13. Graphene layer; 2. Semiconductor material layer; 21. Low-concentration doped semiconductor layer; 22. High-concentration doped semiconductor layer; 23. Back electrode layer; 24. Back electrode lead-out layer. DETAILED DESCRIPTION OF THE INVENTION

[0034] The following are specific embodiments of the present invention in combination with the accompanying drawings to further describe the technical solutions of the present invention, but the present invention is not limited to these embodiments.

[0035] The layered structure of a single semiconductor energy conversion unit is as Figure 1 shown, among which, the layered structure of the Ni-63 graphene radiation source layer is as Figure 2 shown, and the battery formed by stacking two semiconductor energy conversion units is as Figure 3 shown. Of course, the stacking of two or more semiconductor energy conversion units follows this rule.

[0036] Example 1

[0037] Specifically, it is a Ni-63 graphene / Si photovoltaic isotope battery and its preparation method. The Ni-63 graphene / Si photovoltaic isotope battery is formed by stacking and pressing 10 groups of sandwich-structured semiconductor energy conversion units 1. Combining with the attached Figure 1Description: A single sandwich - structured semiconductor energy conversion unit 1 includes a 2 - μm Ni - 63 graphene radiation source layer 11 and two Si semiconductor material layers 2 with a thickness of about 280 μm. The Si semiconductor material layer 2 is composed of a low - concentration doped Si semiconductor layer 21 with a doping concentration of 1×10 15 cm -3 , a thickness of 30 μm, a high - concentration doped Si semiconductor layer 22 with a doping concentration of 1×10 19 cm -3 , a thickness of 250 μm, an indium - gallium back - electrode layer 23, and a copper back - electrode lead - out layer 24 in sequence. The graphene layer 13 is a multi - layer graphene prepared by chemical vapor deposition. The graphene layer 13 contacts the low - concentration doped Si semiconductor layer 21 to form a Schottky junction.

[0038] In this embodiment, the preparation method of the Ni - 63 graphene / Si radioisotope battery is as follows:

[0039] S1. Using NiCl2 as the electroplating solution, deposit a 2 - μm - thick Ni - 63 radiation source on the copper - based multi - layer graphene prepared by chemical vapor deposition by direct - current electro - deposition; 63 NiCl2 as the electroplating solution, deposit a 2 - μm - thick Ni - 63 radiation source on the copper - based multi - layer graphene prepared by chemical vapor deposition by direct - current electro - deposition;

[0040] S2. Take another piece of copper - based multi - layer graphene prepared by chemical vapor deposition, transfer it to the other side of the Ni - 63 radiation source layer away from the copper - based multi - layer graphene in step S1 by the wet - transfer method, and then etch away the copper substrate with FeCl3 solution to realize the preparation of the Ni - 63 graphene radiation source layer;

[0041] S3. Using a high - concentration doped N - type Si semiconductor layer with a doping concentration of 1×10 19 cm -3 , a thickness of 250 μm as the substrate, epitaxially grow a low - concentration doped N - type Si semiconductor layer with a doping concentration of 1×10 15 cm -3 , a thickness of 30 μm on its upper surface by chemical vapor deposition. After the epitaxial layer is completed, clean the sample in acetone and alcohol solutions respectively, and after drying with nitrogen, put it into a laser dicing machine and cut it into basic samples with an effective area of 10 mm * 10 mm for standby;

[0042] S4. Take a basic sample, scrape and coat an indium - gallium electrode on the back side of the high - concentration doped N - type Si semiconductor layer, and use an ultra - thin copper sheet as the back - electrode lead - out layer to make a single Si semiconductor material layer sample with a thickness of about 280 μm;

[0043] S5. Take the 2 samples of Si semiconductor material layers prepared in step S4 and 1 Ni-63 graphene radioactive source layer prepared in step S2, and mechanically press and bond them according to the sandwich structure, so that the multi-layer graphene layers wrapped on both sides of the Ni-63 graphene radioactive source layer are in full contact with the low-concentration doped Si semiconductor layers in contact with them respectively, forming Schottky junctions, and completing the assembly of the Ni-63 graphene / Si sandwich structure semiconductor energy conversion unit.

[0044] Finally, stack 10 Ni-63 graphene / Si sandwich structure semiconductor energy conversion units in sequence and complete the preparation of the Ni-63 graphene / Si radioisotope battery by mechanical pressing.

[0045] Example 2

[0046] Specifically, it is a Ni-63 graphene / SiC radioisotope battery and its preparation method. The Ni-63 graphene / SiC radioisotope battery is formed by stacking and pressing 20 groups of sandwich structure semiconductor energy conversion units 1. Combining with the attached Figure 1 description, a single sandwich structure semiconductor energy conversion unit 1 includes 1 Ni-63 graphene radioactive source layer 11 with a thickness of 2 μm and 2 SiC semiconductor material layers 2 with a thickness of about 350 μm. The SiC semiconductor material layer 2 consists of a low-concentration doped SiC semiconductor layer 21 with a doping concentration of 1×10 16 cm -3 and a thickness of 20 μm, a high-concentration doped SiC semiconductor layer 22 with a doping concentration of 2×10 19 cm -3 , a thickness of 330 μm, a nickel-titanium-aluminum back electrode layer 23 and a copper back electrode lead-out layer 24 in sequence. The graphene layer 13 is few-layer graphene prepared by chemical vapor deposition. The graphene layer 13 is in contact with the low-concentration doped SiC semiconductor layer 21 to form a Schottky junction.

[0047] In this embodiment, based on the preparation method of the Ni-63 graphene / SiC radioisotope battery, the steps are as follows:

[0048] S1. Using 63 NiCl2 as the electroplating solution, deposit a 2-μm-thick Ni-63 radioactive source on the copper-based few-layer graphene prepared by chemical vapor deposition by direct current electroplating;

[0049] S2. Take another portion of copper-based few-layer graphene prepared by chemical vapor deposition, transfer it to the other side of the Ni-63 radioactive source layer far from the copper-based few-layer graphene in step S1 by the wet transfer method, and then etch away the copper substrate with FeCl3 solution to realize the preparation of the Ni-63 graphene radioactive source layer;

[0050] S3. With a doping concentration of 2×1019 cm -3 Using a high-concentration doped N-type SiC semiconductor layer with a thickness of 330 μm as the substrate, a layer with a doping concentration of 1×10 16 cm -3 and a thickness of 20 μm of low-concentration doped N-type Si semiconductor layer is epitaxially grown on its upper surface. After the epitaxial layer is completed, the sample is cleaned by placing it in acetone and alcohol solutions respectively. After being dried with nitrogen, it is placed in a laser dicing machine and cut into basic samples with an effective area of 10 mm * 10 mm for standby;

[0051] S4. Take a basic sample, deposit a nickel-titanium-aluminum metal layer on the back side of the high-concentration doped N-type SiC semiconductor layer by magnetron sputtering, and use an ultra-thin copper sheet as the back electrode lead-out layer to make a single SiC semiconductor material layer sample of about 350 μm;

[0052] S5. Take 2 SiC semiconductor material layer samples prepared in step S4 and 1 Ni-63 graphene radiation source layer prepared in step S2 and press them together in a sandwich structure by mechanical compaction, so that the few-layer graphene layers wrapped on both sides of the Ni-63 graphene radiation source layer are in full contact with the low-concentration doped SiC semiconductor layers they contact respectively, forming a Schottky junction, and completing the assembly of the Ni-63 graphene / SiC sandwich structure semiconductor energy conversion unit.

[0053] Finally, stack 20 Ni-63 graphene / SiC sandwich structure semiconductor energy conversion units in sequence and complete the preparation of the Ni-63 graphene / Si radioisotope battery by mechanical compaction.

[0054] Example 3

[0055] Specifically, it is a Ni-63 graphene / SiC radioisotope battery and its preparation method. The Ni-63 graphene / SiC radioisotope battery is formed by stacking and pressing 10 groups of sandwich structure semiconductor energy conversion units 1 together. With reference to the attached Figure 1 description, a single sandwich structure semiconductor energy conversion unit 1 includes 1 Ni-63 graphene radiation source layer 11 with a thickness of 1 μm and 2 SiC semiconductor material layers 2 with a thickness of about 350 μm. The SiC semiconductor material layer 2 consists of a low-concentration doped SiC semiconductor layer 21 with a doping concentration of 1×10 16 cm -3 and a thickness of 20 μm, and a doping concentration of 2×10 19 cm -3, a high-concentration doped SiC semiconductor layer 22 with a thickness of 330 μm, a nickel-titanium-aluminum back electrode layer 23, and a copper back electrode lead-out layer 24 are sequentially formed. The graphene layer 13 is a multi-layer graphene prepared by chemical vapor deposition. The graphene layer 13 contacts with the low-concentration doped SiC semiconductor layer 21 to form a Schottky junction.

[0056] In this embodiment, a preparation method of a Ni-63 graphene / SiC radioisotope battery is as follows:

[0057] S1. Using 63 NiCl2 as the electroplating solution, deposit a 1-μm-thick Ni-63 radioisotope source on the copper-based multi-layer graphene prepared by chemical vapor deposition using direct current electro-deposition.

[0058] S2. Take another piece of copper-based multi-layer graphene prepared by chemical vapor deposition, transfer it to the other side of the Ni-63 radioisotope source layer away from the copper-based multi-layer graphene in step S1 by wet transfer method, and then etch away the copper substrate with FeCl3 solution to realize the preparation of the Ni-63 graphene radioisotope source layer.

[0059] S3. Using a high-concentration doped N-type SiC semiconductor layer with a doping concentration of 2×10 19 cm -3 and a thickness of 330 μm as the substrate, epitaxially grow a low-concentration doped N-type Si semiconductor layer with a doping concentration of 1×10 16 cm -3 and a thickness of 20 μm on its upper surface by chemical vapor deposition. After the epitaxial layer is completed, clean the sample in acetone and alcohol solutions respectively, and after drying with nitrogen, put it into a laser dicing machine and cut it into basic samples with an effective area of 10 mm * 10 mm for standby.

[0060] S4. Take a basic sample, deposit a nickel-titanium-aluminum metal layer on the back side of the high-concentration doped N-type SiC semiconductor layer by magnetron sputtering, and use an ultra-thin copper sheet as the back electrode lead-out layer to make a single SiC semiconductor material layer sample of about 350 μm.

[0061] S5. Take 2 SiC semiconductor material layer samples prepared in step S4 and 1 Ni-63 graphene radioisotope source layer prepared in step S2, and mechanically press and fit them according to the sandwich structure, so that the multi-layer graphene layers wrapped on both sides of the Ni-63 graphene radioisotope source layer are in full contact with the low-concentration doped SiC semiconductor layers in contact with them respectively to form a Schottky junction, and complete the assembly of the Ni-63 graphene / SiC sandwich structure semiconductor energy conversion unit.

[0062] Finally, ten Ni-63 graphene / SiC sandwich-structured semiconductor energy conversion units are stacked in sequence and mechanically compacted to complete the preparation of the Ni-63 graphene / Si radiative volt isotope battery.

[0063] The specific embodiments described herein are merely illustrative of the spirit of the present invention. Those skilled in the art to which the present invention pertains can make various modifications or supplements to the described specific embodiments or use similar methods for substitution, but will not deviate from the spirit of the present invention or exceed the scope defined by the appended claims.

Claims

1. A Ni-63 graphene radioisotope battery, characterized in that, Comprising at least one set of semiconductor energy conversion units (1), the semiconductor energy conversion units (1) comprising a Ni-63 graphene radiation source layer (11) and two semiconductor material layers (2) respectively located on the upper and lower sides of the Ni-63 graphene radiation source layer (11); the semiconductor material layer (2) comprising a low-concentration doped semiconductor layer (21), a high-concentration doped semiconductor layer (22), a back electrode layer (23), and a back electrode lead-out layer (24) sequentially stacked outward from the Ni-63 graphene radiation source layer (11); the Ni-63 graphene radiation source layer (11) comprising a Ni-63 radiation source layer (12) and graphene layers (13) wrapped on the upper and lower sides of the Ni-63 radiation source layer (12); a Schottky or heterojunction is formed between the Ni-63 graphene radiation source layer (11) and the low-concentration doped semiconductor layer (21) in contact therewith, and the Ni-63 graphene radiation source layer (11) serves as the upper electrode lead-out layer of the semiconductor energy conversion unit (1).

2. The Ni-63 graphene radioisotope battery according to claim 1, characterized in that, The thickness of the Ni-63 graphene radiation source layer (11) is 0.01 μm - 5 μm.

3. A Ni-63 graphene radioisotope battery according to claim 1, characterized in that, The thickness of the Ni-63 graphene radiation source layer (11) is 0.5 μm - 2 μm.

4. A Ni-63 graphene radioisotope battery according to claim 1, characterized in that, The graphene layer (13) is a single-layer or multi-layer graphene prepared by chemical vapor deposition transferred onto the Ni-63 radiation source layer (12).

5. A Ni-63 graphene radioisotope battery according to claim 1, characterized in that, The low-concentration doped semiconductor layer (21) and the high-concentration doped semiconductor layer (22) are one of Si, GaAs, GaN, SiC, diamond, gallium oxide, boron nitride, wide-bandgap semiconductors or ultra-wide-bandgap semiconductors; the doping concentration of the low-concentration doped semiconductor layer (21) is 10 12 -10 16 cm -3 , and the thickness is 0.5 μm - 50 μm; the doping concentration of the high-concentration doped semiconductor layer (22) is not less than 10 17 cm -3 , and the thickness is 50 μm - 300 μm.

6. A method for preparing the Ni-63 graphene radioisotope battery according to any one of claims 1-5, characterized in that, Comprising the following steps: S1. Prepare the Ni-63 radiation source layer (12); S2. Prepare the Ni-63 graphene radiation source layer (11); S3. Using the high-concentration doped semiconductor layer (22) as a substrate, homoepitaxially grow the low-concentration doped semiconductor layer (21), and clean the prepared epitaxial wafer for standby; S4. Deposit a metal on the side of the epitaxial wafer in step S3 away from the low-concentration doped semiconductor layer (21) to prepare the back electrode layer (23) and the back electrode lead-out layer (24), and make the semiconductor material layer (2); S5. Press the two semiconductor material layers (2) prepared in step S4 and the one Ni-63 graphene radiation source layer (11) prepared in step S2 in a sandwich structure, so that the graphene layers (13) on both sides of the Ni-63 graphene radiation source layer (11) are in full contact with the low-concentration doped semiconductor layers (21) in contact therewith respectively, to form a Schottky or heterojunction, and complete the assembly of the sandwich structure semiconductor energy conversion unit (1).

7. The preparation method of a Ni-63 graphene radioisotope battery according to claim 6, wherein, In step S1, the Ni-63 radiation source layer (12) is a thin film prepared by an electrochemical method or a powder metallurgy rolling method. Among them, if the Ni-63 radiation source layer is prepared by the electrochemical method, the specific process is as follows: 63 Using NiCl2 as the electroplating solution, Ni-63 radiation source is deposited on the copper-based or nickel-based graphene prepared by chemical vapor deposition method by direct current or alternating current deposition method; if the Ni-63 radiation source layer is prepared by the powder metallurgy rolling method, the specific process is as follows: Ni-63 is made into powder in the form of a stable compound, and the Ni-63 radiation source blank is made by powder metallurgy method, and then rolled into a foil film Ni-63 radiation source.

8. The preparation method of a Ni-63 graphene radioisotope battery according to claim 6, characterized in that, If the Ni-63 radiation source layer is prepared by an electrochemical method in step S1, use the wet transfer method to directly transfer one portion of graphene to the other side of the Ni-63 radiation source layer away from the copper-based or nickel-based graphene, and then etch away the copper-based or nickel-based substrate to realize the preparation of the Ni-63 graphene radiation source layer (11) in step S2; if the Ni-63 radiation source layer is prepared by a powder metallurgy rolling method in step S1, directly use the wet transfer method to transfer two portions of graphene to the upper and lower sides of the foil Ni-63 radiation source layer respectively to realize the preparation of the Ni-63 graphene radiation source layer (11) in step S2.

9. The preparation method of a Ni-63 graphene radioisotope battery according to claim 6, characterized in that, The homoepitaxial low-concentration doped semiconductor layer (21) described in step S3 includes chemical vapor deposition, plasma-enhanced chemical vapor deposition, microwave plasma chemical vapor deposition, or molecular beam epitaxy.

10. The preparation method of a Ni-63 graphene radioisotope battery according to claim 6, characterized in that, The back electrode layer (23) and the back electrode lead-out layer (24) described in step S4 are one or any combination of nickel, titanium, aluminum, gold, silver, copper, tungsten, germanium, indium, and gallium.

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