Surface emitting laser, light emitting assembly and light module

Abstract

The embodiment of the invention relates to a surface emitting laser, a light emitting assembly and an optical module. The surface emitting laser comprises a substrate; the bottom reflector structure, the active layer and the top reflector structure are arranged on the substrate; wherein a plurality of oxidation limiting layers are formed in the top reflecting mirror structure, and the thickness of part of the oxidation limiting layers is different from the thickness of the other part of the oxidation limiting layers. According to the scheme, series resistance and stray capacitance can be reduced, and product performance is improved.

Description

Technical Field

[0001] Embodiments of the present application relate to the technical field of semiconductor lasers, and in particular, to a surface-emitting laser, an optical emission component, and an optical module. Background Art

[0002] The modulation bandwidth of a surface-emitting laser, such as a vertical cavity surface-emitting laser (VCSEL), is related not only to intrinsic factors such as relaxation oscillation frequency and damping, but also to the extrinsic electrical parasitic cutoff frequency. When the relaxation oscillation frequency of the laser is large, its dynamic characteristics are mainly limited by the electrical parasitic cutoff frequency. Therefore, in device design, the electrical parasitic effect should be reduced as much as possible to increase the electrical parasitic cutoff frequency. The electrical parasitic cutoff frequency is mainly determined by factors such as the series resistance caused by the hole transport in the upper DBR, the parasitic capacitance introduced by the oxide layer, and the large pad capacitance.

[0003] Therefore, how to improve the dynamic characteristics of VCSELs is a difficult problem that needs to be solved urgently at present. Summary of the Invention

[0004] Based on this, in view of the above technical problems, it is necessary to provide a surface-emitting laser, an optical emission component, and an optical module.

[0005] In a first aspect, the present application provides a surface-emitting laser, including: A substrate; A bottom mirror structure, an active layer, and a top mirror structure disposed on the substrate; Wherein, a plurality of oxide confinement layers are formed in the top mirror structure, and the thickness of some of the oxide confinement layers is different from the thickness of the rest of the oxide confinement layers.

[0006] It can be understood that the surface-emitting laser provided by the present application forms a plurality of oxide confinement layers in the top mirror structure, and makes the thickness of some of the oxide confinement layers different from the thickness of the rest of the oxide confinement layers, so as to reduce the overall parasitic capacitance in the form of series connection of multiple oxide confinement layer capacitances.

[0007] In a possible embodiment, along the direction away from the active layer, each of the oxide confinement layers is divided into multiple groups, and the oxidation depth of each group of oxide confinement layers is basically the same, and the oxidation depth of different groups of oxide confinement layers is different.

[0008] In a possible embodiment, along the direction away from the active layer, the oxidation depth of different groups of oxide confinement layers gradually decreases.

[0009] In a possible embodiment, a set of the oxidation confinement layers closest to the active layer is used to define the light-emitting aperture of the surface-emitting laser; and among this set of oxidation confinement layers, the thicknesses of the oxidation confinement layer farthest and closest to the active layer are different from the thicknesses of the remaining oxidation confinement layers in this set.

[0010] In a possible embodiment, among a set of oxidation confinement layers closest to the active layer, the thicknesses of the oxidation confinement layer farthest and closest to the active layer are less than the thicknesses of the remaining oxidation confinement layers in this set.

[0011] In a possible embodiment, among a set of oxidation confinement layers closest to the active layer, the relatively thicker oxidation confinement layers are used to define the light-emitting aperture of the surface-emitting laser.

[0012] In a possible embodiment, among a set of oxidation confinement layers closest to the active layer, the thicknesses of the oxidation confinement layer farthest and closest to the active layer are equal, and the thickness is 5 - 15 nm; the thicknesses of the remaining oxidation confinement layers in this set are equal, and the thickness is 20 - 35 nm.

[0013] In a possible embodiment, among a set of oxidation confinement layers closest to the active layer, the oxidation confinement layers within this set of oxidation confinement layers are arranged in the pattern of thin / thick / thin / thick.

[0014] In a possible embodiment, the top mirror structure includes multiple pairs of Al x GaAs / Al 1-x GaAs periodic stack structures, where 0.12 ≤ x < 1.

[0015] In a possible embodiment, the aluminum component in the AlGaAs material forming the oxidation confinement layer is graded and the AlGaAs material is subjected to modulation doping.

[0016] In a second aspect, the present application further provides an optical emission component, including the surface-emitting laser according to any one of the first aspect.

[0017] In a third aspect, the present application further provides an optical module, including an optical emission module and an optical reception module, where the optical emission module is the optical emission component according to the second aspect.

[0018] The above surface-emitting laser, optical emission component and optical module, the surface-emitting laser includes a substrate; a bottom mirror structure, an active layer and a top mirror structure disposed on the substrate; wherein, a plurality of oxidation confinement layers are formed in the top mirror structure, and the thickness of some of the oxidation confinement layers is different from the thickness of the rest of the oxidation confinement layers. The surface-emitting laser of the present application can form a plurality of oxidation confinement layers in the top mirror structure, and make the thickness of some of the oxidation confinement layers different from the thickness of the rest of the oxidation confinement layers, so as to reduce the overall parasitic capacitance in the form of a series connection of multiple oxidation confinement layer capacitances. Description of the Drawings

[0019] Figure 1 is a schematic structural diagram of a surface-emitting laser in an embodiment of the present application; Figure 2 is Figure 1 a schematic structural diagram of a first implementation manner of a group of oxidation confinement layers in the surface-emitting laser shown; Figure 3 is Figure 1 a schematic structural diagram of a second implementation manner of a group of oxidation confinement layers in the surface-emitting laser shown; Figure 4 is Figure 1 a schematic structural diagram of a third implementation manner of a group of oxidation confinement layers in the surface-emitting laser shown; Figure 5 is Figure 1 a schematic structural diagram of a fourth implementation manner of a group of oxidation confinement layers in the surface-emitting laser shown.

[0020] The realization of the object, functional features and advantages of the present invention will be further described with reference to the embodiments and the accompanying drawings. Detailed Embodiments

[0021] In order to make the object, technical solution and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0022] It can be understood that the terms "first", "second", etc. used in the present application can be used in this document to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish the first element from another element. For example, without departing from the scope of the present application, the first client can be called the second client, and similarly, the second client can be called the first client.

[0023] In addition, the terms "first" and "second" are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one such feature. The meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically defined. The meaning of "several" is at least one, such as one, two, etc., unless otherwise specifically defined.

[0024] Based on this, the present application creatively proposes a surface-emitting laser, aiming to solve the aforementioned technical problems.

[0025] In a first aspect, as Figure 1 shown, the present application provides a surface-emitting laser, including a substrate 10; a bottom mirror structure 110, an active layer 120, and a top mirror structure 130 disposed on the substrate 10.

[0026] Among them, a plurality of oxidation confinement layers 131 are formed in the top mirror structure 130, and the thickness of some of the oxidation confinement layers 131 is different from that of the rest of the oxidation confinement layers 131. The surface-emitting laser of the present application can be, for example, a vertical-cavity surface-emitting laser (VCSEL). For ease of description, the vertical-cavity surface-emitting laser will be taken as an example for subsequent description.

[0027] In this specific embodiment, the bottom mirror structure 110 and the top mirror structure 130 define the resonant cavity structure of the vertical-cavity surface-emitting laser of the present application, that is, the region between the bottom mirror structure 110 and the top mirror structure 130 is the resonant cavity. The resonant cavity is used to generate a standing wave, which is a wave formed by the superposition of two coherent waves propagating in opposite directions on the same straight line. Specifically, when the phases of the two waves are the same, their amplitudes are added to form a wave belly (i.e., a wave crest). When the phases of the two waves are opposite, their amplitudes are subtracted to form a node (i.e., a wave trough). Therefore, the positions of the wave crests and wave troughs of the standing wave are fixed.

[0028] In one embodiment, the bottom mirror structure 110 may include a periodically stacked DBR structure, that is, it includes a plurality of mirrors with an optical thickness of a quarter of the lasing wavelength, and the plurality of mirrors are arranged alternately with high and low refractive indices.

[0029] It can be understood that the components, stacking periods, etc. of the DBR structure of the bottom mirror structure 110 and the DBR structure of the top mirror structure 130 can be the same or different, and this embodiment does not make any limitations. Among them, the materials of the top mirror structure 130 and the bottom mirror structure 110 can be dielectric materials with electrical insulation properties, such as silicon nitride, silicon oxide, aluminum oxide, or titanium oxide, etc. The materials of the top mirror structure 130 and the bottom mirror structure 110 can also be semiconductor materials, such as GaAs and AlGaAs.

[0030] Among them, the material of the substrate 10 includes but is not limited to GaAs, InP, Si, etc. The bottom mirror structure 110 and the top mirror structure 130 can include film layers with periodically varying refractive indices to achieve efficient reflection or transmission of light within a specific wavelength range. The film layers with periodically varying refractive indices can be composed of semiconductor materials, dielectric materials, metal-dielectric hybrid materials, etc. For example, the bottom mirror structure 110 can be an N-type semiconductor layer, and the top mirror structure 130 can be a P-type semiconductor layer. Another example is that the bottom mirror structure 110 can be a P-type semiconductor layer, and the top mirror structure 130 can be an N-type semiconductor layer. Optionally, the materials of the N-type semiconductor layer and the P-type semiconductor layer can be but are not limited to GaAs, AlGaAs, etc., and no limitations are made here as long as they can define the resonant cavity, and they all fall within the protection scope of this embodiment.

[0031] The active layer 120 can include 1 active region, or can include 2 active regions, can also include 3 active regions, and can further include 4 active regions. One multi-quantum well structure or multiple multi-quantum well structures can be arranged in each active region. The multi-quantum well structure is used to generate stimulated emission photons, and the emitted photons are continuously reflected in the resonant cavity defined by the bottom mirror structure 110 and the top mirror structure 130, and are continuously enhanced during the reflection process, so as to finally emit laser light at a specific wavelength and with sufficient energy.

[0032] The multi - quantum well structure is the place where laser gain amplification occurs. The central position of the multi - quantum well structure can be aligned with the position where the optical field is the strongest to achieve a greater amplification effect. Further, in the case of including multiple multi - quantum well structures, the confinement factors of the multi - quantum well structures in the same optical field are within the same preset range, that is, the confinement factors of each multi - quantum well structure are maintained at the same level, so that the contribution of each multi - quantum well structure to luminescence is similar. It can be understood that similar luminescence contributions mean that the current injection in each multi - quantum well structure is more uniform, which helps to reduce the threshold current of the device, thereby reducing the power consumption of the device and prolonging its service life. Moreover, when the contribution of each multi - quantum well structure to luminescence is similar, the distribution of carriers in each multi - quantum well structure will be more uniform, which helps to reduce the recombination loss of carriers, thereby improving the overall luminescence efficiency of the device.

[0033] In one embodiment, along the direction away from the active layer 120, each oxidation confinement layer in the top mirror structure 130 is divided into multiple groups, and the oxidation depth of each group of oxidation confinement layers is basically the same, and the oxidation depths of different groups of oxidation confinement layers are different.

[0034] It can be understood that by wet - oxygen oxidation, an oxidation layer structure with multiple different light - emitting aperture sizes is realized, so as to facilitate the reduction of the total parasitic capacitance in the form of a series connection of multiple oxidation confinement layer capacitances.

[0035] In one embodiment, along the direction away from the active layer 120, the oxidation depths of different groups of oxidation confinement layers 131 gradually decrease.

[0036] It can be understood that by making the oxidation depths of different groups of oxidation confinement layers 131 gradually decrease along the direction away from the active layer 120, the light - emitting aperture sizes of different groups of oxidation confinement layers 131 are made different, so as to facilitate the reduction of the total parasitic capacitance in the form of a series connection of multiple oxidation confinement layer capacitances.

[0037] In one embodiment, the group of oxidation confinement layers 131 closest to the active layer 120 is used to define the light - emitting aperture of the surface - emitting laser; and in this group of oxidation confinement layers 131, the thicknesses of the oxidation confinement layers farthest and closest to the active layer 120 are different from the thicknesses of the remaining oxidation confinement layers in this group.

[0038] In one embodiment, in the group of oxidation confinement layers closest to the active layer 120, the thicknesses of the oxidation confinement layers farthest and closest to the active layer 120 are less than the thicknesses of the remaining oxidation confinement layers in this group.

[0039] Optionally, the number of the remaining oxidation confinement layers in this group can be 1 layer, 2 layers, or multiple layers.

[0040] Optionally, in a set of oxidation confinement layers closest to the active layer 120, the thicknesses of the oxidation confinement layers farthest and closest to the active layer 120 are not equal; the thickness of the thin oxidation confinement layer 131 farthest from the active layer 120 in this set of oxidation confinement layers 13 is less than the thickness of the thick oxidation confinement layer 132 closest to the active layer 120; or as Figure 2 shown, the thickness of the thick oxidation confinement layer 133 farthest from the active layer 120 in this set of oxidation confinement layers 13 is less than the thickness of the thin oxidation confinement layer 131 closest to the active layer 120.

[0041] In one embodiment, in a set of oxidation confinement layers closest to the active layer 120, the thicker oxidation confinement layer is used to define the light-emitting aperture of the surface-emitting laser.

[0042] As Figure 3 shown, in one embodiment, in a set of oxidation confinement layers 13 closest to the active layer 120, the thicknesses of the thin oxidation confinement layers 131 farthest and closest to the active layer 120 are equal, and the thickness is 5 - 15 nm; the thicknesses of the remaining oxidation confinement layers 132 in this set are equal, and the thickness is 20 - 35 nm.

[0043] Optionally, in a set of oxidation confinement layers closest to the active layer 120, the thicknesses of the thin oxidation confinement layers 131 farthest and closest to the active layer 120 can be 5 nm, 10 nm, or 15 nm. Considering that too thin oxidation confinement layers actually oxidize very slowly or hardly oxidize at all, it is crucial to select an appropriate thickness for the thin oxidation confinement layer. In this specific embodiment, the recommended thickness of the thin oxidation confinement layer 131 is between 10 nm and 15 nm. Alternatively, the overall thickness of the so-called thinner thin oxidation confinement layer 131 before oxidation can be the same as the thickness of the thicker thick oxidation confinement layer 132, but by controlling the water-oxygen ratio or concentration during oxidation or making the high-aluminum component in this layer further graded, a relatively thin thin oxidation confinement layer 131 can be obtained.

[0044] In addition, by arranging thinner oxidation confinement layers on both sides of the thick oxidation confinement layer for forming the oxidation hole, the current injection path can be further improved, enabling more current to flow towards the center of the oxidation hole, and there is higher current injection at the center, meaning that the low-order mode will be more excited.

[0045] Optionally, in a set of oxidation confinement layers closest to the active layer 120, the thicknesses of the oxidation confinement layers other than the ones farthest and closest to the active layer 120 can be 20 nm, 25 nm, 30 nm, or 35 nm.

[0046] It can be understood that by arranging thin oxidation confinement layers at both ends and a thicker oxidation confinement layer in the middle in a set of oxidation confinement layers closest to the active layer 120, not only can the capacitance be reduced, but also the stress can be evenly distributed, making the stress near the oxidation holes basically uniform, so as to reduce the impact of the large stress generated during the oxidation of the thicker oxidation confinement layer on the crystal quality and improve the product performance.

[0047] As Figure 4 shown, in a possible embodiment, in a set of oxidation confinement layers closest to the active layer 120, the oxidation confinement layers within this set of oxidation confinement layers are arranged in the pattern of thin / thick / thin / thick.

[0048] Optionally, the thin oxidation confinement layers in this set of oxidation confinement layers have the same thickness, and the thick oxidation confinement layers have the same thickness. For example, the thickness of the first oxidation confinement layer (i.e., the thin oxidation confinement layer 131) is 5 nm, the thickness of the second oxidation confinement layer (i.e., the thick oxidation confinement layer 132) is 20 nm, the thickness of the third oxidation confinement layer (i.e., the thin oxidation confinement layer 131) is 5 nm, and the thickness of the fourth oxidation confinement layer (i.e., the thick oxidation confinement layer 132) is 20 nm.

[0049] In another embodiment, in the above-mentioned set of oxidation confinement layers closest to the active layer 120, the thin oxidation confinement layers within this set of oxidation confinement layers have different thicknesses. For example, the thickness of the oxidation confinement layer closest to the active layer 120 in this set is less than the thickness of the oxidation confinement layer farther away from the active layer 120. That is, in accordance with the above arrangement pattern, the thickness of the first oxidation confinement layer (close to the active layer 120) is less than or greater than the thickness of the third oxidation confinement layer, and the thickness of the second oxidation confinement layer and the fourth oxidation confinement layer can be equal or unequal, but their thicknesses are both greater than the thickness of the first oxidation confinement layer and the third oxidation confinement layer. For example, the thickness of the first oxidation confinement layer is 5 nm, the thickness of the second oxidation confinement layer is 20 nm, the thickness of the third oxidation confinement layer is 10 nm, and the thickness of the fourth oxidation confinement layer is 20 nm. Another example is that the thickness of the first oxidation confinement layer is 10 nm, the thickness of the second oxidation confinement layer is 20 nm, the thickness of the third oxidation confinement layer is 5 nm, and the thickness of the fourth oxidation confinement layer is 20 nm.

[0050] In another embodiment, the thickness of the second oxidation confinement layer is less than the thickness of the fourth oxidation confinement layer; or the thickness of the second oxidation confinement layer is greater than the thickness of the fourth oxidation confinement layer; or the thickness of the second oxidation confinement layer is equal to the thickness of the fourth oxidation confinement layer. For example, the thickness of the second oxidation confinement layer is 20 nm and the thickness of the fourth oxidation confinement layer is 25 nm. Another example is that the thickness of the second oxidation confinement layer is 25 nm and the thickness of the fourth oxidation confinement layer is 20 nm.

[0051] In one embodiment, the top mirror structure 130 includes multiple pairs of Al x GaAs / Al 1-x GaAs periodic stacking structures, where 0.12 ≤ x < 1.

[0052] Optionally, x can be 0.12.

[0053] In one embodiment, the aluminum component in the AlGaAs material forming the oxidation confinement layer 131 is graded and the AlGaAs material is subjected to modulation doping.

[0054] It can be understood that by inserting a material with a graded aluminum component into the Al x GaAs / Al 1-x GaAs DBR of the material of the top mirror structure 130 and adopting the method of modulation doping (δ-doping) to reduce the barrier between the interfaces of the two materials in the top mirror structure 130, thereby increasing the thermally excited current and tunneling current of carriers between the heterointerfaces of the top mirror structure 130, and further significantly reducing the series resistance.

[0055] In one embodiment, in order to achieve the required high reflectivity, a reflectivity supplement structure (not shown in the figure) may be additionally designed. The reflectivity supplement structure is configured to increase the reflectivity on the side of the vertical cavity surface emitting laser including the bottom mirror structure 110 (e.g., the top side of the vertical cavity surface emitting laser). In the absence of the reflectivity supplement structure, due to the required high reflectivity and the reduced interaction between the cavity mode and the optical element, the efficiency of integrating an optical element (such as a grating) in a vertical cavity surface emitting laser on top of a fully semiconductor DBR mirror is relatively low (e.g., compared to a top-emitting vertical cavity surface emitting laser). Reducing the number of mirror pairs in the top mirror structure 130 increases the coupling of the cavity mode with such an optical element. However, reducing the number of mirror pairs in the top mirror structure 130 reduces the reflectivity on the side of the vertical cavity surface emitting laser including the top mirror structure. In a vertical cavity surface emitting laser, the reflectivity supplement structure is used to increase the reflectivity on the side of the vertical cavity surface emitting laser including the bottom mirror structure 110. Therefore, the number of mirror pairs in the bottom mirror structure 110 can be reduced, and the reflectivity supplement structure can be designed to mitigate the reduction in reflectivity caused by the reduction in the number of mirror pairs in the bottom mirror structure 110. In some embodiments, the reflectivity supplement structure may include a plurality of DBR pairs or another type of mirror structure. In some embodiments, the reflectivity supplement structure is formed of a dielectric material. Therefore, in some embodiments, the reflectivity supplement structure includes a plurality of dielectric DBR pairs. For example, the reflectivity supplement structure may include a plurality of SiO2 / SiNx mirror pairs, a plurality of SiO2 / titanium dioxide (TiO2) mirror pairs, or a plurality of Al2O3 / TiO2 mirror pairs, among other examples. In some embodiments, the thickness of the reflectivity supplement structure may be in the range from about 2.0 μm to about 4.0 μm, such as 2.5 μm. In some embodiments, the number of mirror pairs in the reflectivity supplement structure is in the range from three mirror pairs to eight mirror pairs.

[0056] As Figure 5 shown, in a possible embodiment, the surface emitting laser may form an N electrode 140 on the side of the substrate 10 facing away from the bottom mirror structure 110, and a P electrode 150 is formed on the top mirror structure 130.

[0057] In one embodiment, the embodiments of the present application further provide an optical emission component, and the optical emission component includes at least one surface emitting laser.

[0058] It can be understood that for the optical emission component in this embodiment, by making the thickness and aperture of the oxidation confinement layer in the top mirror structure of the surface-emitting laser in the optical emission component different, it is convenient to reduce the overall parasitic capacitance in the form of multiple oxidation confinement layer capacitors connected in series. Additionally, by inserting a material with a gradually changing Al composition into the Al x GaAs / Al 1-x GaAs DBR pair material and adopting the method of modulation doping (δ-doping) to reduce the potential barrier between the interfaces of the two materials in the top mirror structure, the thermally excited current and tunneling current of carriers between the heterointerfaces of the top mirror structure are increased, and thus the series resistance is significantly reduced.

[0059] In one embodiment, the embodiment of the present application further provides an optical module, including at least one optical emission component as described above.

[0060] It can be understood that for the optical module in this embodiment, by making the thickness and aperture of the oxidation confinement layer in the top mirror structure of the surface-emitting laser in the optical module different, it is convenient to reduce the overall parasitic capacitance in the form of multiple oxidation confinement layer capacitors connected in series. Additionally, by inserting a material with a gradually changing Al composition into the Al x GaAs / Al 1-x GaAs DBR pair material and adopting the method of modulation doping (δ-doping) to reduce the potential barrier between the interfaces of the two materials in the top mirror structure, the thermally excited current and tunneling current of carriers between the heterointerfaces of the top mirror structure are increased, and thus the series resistance is significantly reduced.

[0061] The foregoing disclosure provides illustrations and descriptions, but is not intended to be exhaustive of the embodiments or to limit the embodiments to the precise forms disclosed. Modifications and variations may be made in light of the foregoing disclosure, or may be obtained from the practice of the embodiments. Additionally, any of the embodiments described herein may be combined, unless the foregoing disclosure expressly provides a reason why one or more of the embodiments may not be combined.

[0062] Even if specific combinations of features are recited in the claims and / or disclosed in the specification, these combinations are not intended to limit the disclosure of the various embodiments. In fact, many of these features may be combined in ways not specifically recited in the claims and / or disclosed in the specification. Although each dependent claim listed below may directly depend on only one claim, the disclosure of the various embodiments includes each dependent claim in combination with every other claim in the claim set. As used herein, the phrase referring to "at least one" of a list of items refers to any combination of these items, including a single member. By way of example, "at least one of the following: a, b, or c" is intended to cover a, b, c, a-b, a-c, b-c, and a-b-c, as well as any combination having multiple identical items.

[0063] When a component or one or more components (e.g., a laser emitter or one or more laser emitters) are described or claimed (within a single claim or across multiple claims) as performing multiple operations or being configured to perform multiple operations, such language is intended to broadly cover a variety of architectures and environments. For example, unless otherwise expressly required (e.g., by using "a first component" and "a second component" or other language that differentiates components in the claims), such language is intended to cover a single component that performs or is configured to perform all of the operations, a group of components that jointly perform or are configured to perform all of the operations, a first component that performs or is configured to perform a first operation and a second component that performs or is configured to perform a second operation, or any combination of components that perform or are configured to perform the operations. For example, when a claim is in the form of "one or more components are configured to: perform X; perform Y; and perform Z," the claim should be interpreted to mean "one or more components are configured to perform X; one or more (possibly different) components are configured to perform Y; and one or more (also possibly different) components are configured to perform Z."

[0064] The components, acts, or instructions used herein should not be construed as critical or essential unless expressly described as such. Additionally, as used herein, the articles "a" and "an" are intended to include one or more items and may be used interchangeably with "one or more." Further, as used herein, the article "the" is intended to include one or more items referenced in conjunction with the article "the" and may be used interchangeably with "the one or more." Additionally, as used herein, the term "set" is intended to include one or more items (e.g., related items, unrelated items, or a combination of related and unrelated items) and may be used interchangeably with "one or more." In instances where only one item is intended, the phrase "only one" or similar language is used. Additionally, as used herein, the terms "having," "including," "carrying," etc. are intended to be open-ended terms. Further, unless expressly stated otherwise, the phrase "based on" is intended to mean "at least partially based on." Additionally, as used herein, unless expressly stated otherwise (e.g., if used in combination with "any one" or "only one of"), the term "or" when used in series is intended to be inclusive and may be used interchangeably with "and / or." Further, for ease of description, spatial relative terms such as "below," "lower," "above," "upper," etc. may be used herein to describe the relationship of one element or feature to another (one or more) element or (one or more) feature illustrated in the figures. Except for the orientation depicted in the figures, the spatial relative terms are intended to encompass different orientations of the device, apparatus, and / or element during use or operation. The device may be otherwise oriented (rotated 90 degrees or in other orientations), and the spatial relative descriptors used herein may be interpreted accordingly.

Claims

1. A surface-emitting laser, characterized in that, Comprising: A substrate; A bottom mirror structure, an active layer, and a top mirror structure disposed on the substrate; Wherein, a plurality of oxidation confinement layers are formed in the top mirror structure, and the thickness of some of the oxidation confinement layers is different from the thickness of the rest of the oxidation confinement layers.

2. The surface-emitting laser according to claim 1, characterized in that, In the direction away from the active layer, each of the oxidation confinement layers is divided into multiple groups, and the oxidation depth of each group of oxidation confinement layers is substantially the same, and the oxidation depth of different groups of oxidation confinement layers is different.

3. The surface-emitting laser according to claim 2, wherein In the direction away from the active layer, the oxidation depth of different groups of oxidation confinement layers gradually decreases.

4. The surface-emitting laser according to claim 2, wherein The group of oxidation confinement layers closest to the active layer is used to define the light-emitting aperture of the surface-emitting laser; and in this group of oxidation confinement layers, the thickness of the oxidation confinement layer farthest and closest to the active layer is different from the thickness of the rest of the oxidation confinement layers in this group.

5. The surface emitting laser according to claim 4, wherein, In the group of oxidation confinement layers closest to the active layer, the thickness of the oxidation confinement layer farthest and closest to the active layer is less than the thickness of the rest of the oxidation confinement layers in this group.

6. The surface-emitting laser according to claim 5, wherein, In the group of oxidation confinement layers closest to the active layer, the thicker oxidation confinement layer is used to define the light-emitting aperture of the surface-emitting laser.

7. The surface-emitting laser according to claim 5, characterized in that, In the group of oxidation confinement layers closest to the active layer, the thickness of the oxidation confinement layer farthest and closest to the active layer is equal, and its thickness is 5-15 nm; the thickness of the rest of the oxidation confinement layers in this group is equal, and its thickness is 20-35 nm.

8. The surface emitting laser according to claim 4, wherein In the group of oxidation confinement layers closest to the active layer, the oxidation confinement layers in this group of oxidation confinement layers are arranged in the order of thin / thick / thin / thick.

9. The surface emitting laser according to any one of claims 1-8, characterized in that, The top reflector structure includes multiple pairs of Al x GaAs / Al 1-x GaAs periodic stacking structure, wherein 0.12≤x<1.

10. The surface-emitting laser according to claim 9, wherein The aluminum component in the AlGaAs material forming the oxidation confinement layer is graded and the AlGaAs material is subjected to modulation doping.

11. An optical emission component, characterized in that, Comprising the surface-emitting laser according to any one of claims 1-10.

12. An optical module, characterized in that, Comprising an optical emission module and an optical reception module, wherein, the optical emission module is the optical emission component according to claim 11.

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