Semiconductor device integrating temperature measurement module and HEMT and preparation method

Abstract

The invention discloses a semiconductor device integrating a temperature measurement module and an HEMT and a preparation method, and relates to the technical field of semiconductors. In the temperature measurement module, a source electrode bonding pad is electrically connected with a source electrode of the HEMT device, a grid electrode bonding pad is electrically connected with a grid electrode, and a drain electrode bonding pad is electrically connected with a drain electrode, so that a source electrode wire, a grid electrode wire and a drain electrode wire are arranged as external pins of the HEMT device and are electrically connected with an external circuit to realize normal work of the HEMT device. The Schottky diode of the temperature measurement module and the heating area of the HEMT are correspondingly arranged, and the junction temperature of the HEMT device can be measured according to the characteristic that the forward voltage of the Schottky diode changes along with the temperature. Through the first passivation layer in the HEMT device, electrical isolation between the Schottky diode and the HEMT device is realized, switching between a working state and a test state of a semiconductor device is not needed, and the purpose of accurately monitoring the junction temperature of the HEMT device in real time is realized.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology. More specifically, it relates to a semiconductor device integrating a temperature measurement module and a HEMT (High Electron Mobility Transistor), and a preparation method thereof. Background Art

[0002] HEMT devices have excellent characteristics such as high power, high frequency, and low noise. Compared with silicon-based devices, HEMT devices provide faster switching speeds and higher operating frequencies, and can achieve higher output power, higher power density, smaller volume, and controllable costs. They are widely used in fields such as 5G communication, satellites, and power electronics.

[0003] With the continuous improvement of performance requirements, HEMT devices usually operate under high-frequency and high-power conditions. And with the increase in system integration, the devices are required to be more miniaturized, which inevitably brings greater power dissipation. Due to the limitation of heat conduction, the heat generated by the current passing through the device cannot be dissipated in time, resulting in an increase in the internal temperature of the device. This phenomenon is called the "self-heating effect". The occurrence of the self-heating effect will reduce the carrier mobility and saturation velocity of the device, because the excitation of hot electrons and the scattering of phonons will increase with the increase in temperature. In addition, the self-heating effect may also cause the drift of the threshold voltage of the HEMT device, resulting in a decrease in transconductance, thereby affecting the switching characteristics and amplification performance of the device. In addition, the self-heating effect will also cause the generation of local hot spots, which may become the starting point of device failures. Working at high temperatures for a long time will accelerate the aging process of the device materials and shorten the service life of the device. In extreme cases, too high a temperature may even cause the device to burn out. Therefore, in order to reduce the adverse effects of the self-heating effect, it is necessary to monitor the junction temperature of the HEMT device, so as to take corresponding measures in time according to the monitoring results. Summary of the Invention

[0004] In view of this, this application provides a semiconductor device integrating a temperature measurement module and a HEMT, and a preparation method thereof, effectively solving the existing technical problems and achieving the purpose of real-time and accurate monitoring of the junction temperature of the HEMT device.

[0005] To achieve the above object, the technical solutions provided by this application are as follows: A semiconductor device integrating a temperature measurement module and a HEMT, comprising: A temperature measurement module and a HEMT device bonded to each other; The HEMT device includes: a first epitaxial structure layer, and a source electrode, a gate electrode, a drain electrode, and a first passivation layer located on a surface of the first epitaxial structure layer facing the temperature measurement module; the gate electrode is located between the source electrode and the drain electrode, the heating area of the HEMT device is located between the gate electrode and the drain electrode, and the heating area is close to the side of the gate electrode, wherein the first passivation layer is at least correspondingly disposed on the heating area; The temperature measurement module includes: a substrate layer, a second epitaxial structure layer located on a surface of the substrate layer facing the HEMT device, an anode and a cathode located on a surface of the second epitaxial structure layer facing the HEMT device, a second passivation layer covering an exposed surface of the substrate layer facing the HEMT device and covering an exposed surface of the second epitaxial structure layer, a source pad, a gate pad, a drain pad, a source wiring, a gate wiring, a drain wiring, a cathode wiring, and an anode wiring located on a side of the second passivation layer facing the HEMT device; the second epitaxial structure layer, the anode, and the cathode form a Schottky diode, the source pad is electrically connected to the source wiring, the gate pad is electrically connected to the gate wiring, the drain pad is electrically connected to the drain wiring, the anode is electrically connected to the anode wiring, and the cathode is electrically connected to the cathode wiring; A positive projection of the Schottky diode on the first passivation layer at least partially overlaps with the heating area, the source pad is electrically connected to the source electrode, the gate pad is electrically connected to the gate electrode, and the drain pad is electrically connected to the drain electrode.

[0006] Optionally, the first passivation layer covers an exposed surface of the first epitaxial structure layer facing the temperature measurement module; The thickness range of the first passivation layer is 50 - 400 nm.

[0007] Optionally, at the heating area, the anode achieves heat transfer contact with the first passivation layer through the anode wiring, and the cathode achieves heat transfer contact with the first passivation layer through the cathode wiring.

[0008] Optionally, the source pad and the source electrode are electrically connected by hybrid bonding, the gate pad and the gate electrode are electrically connected by hybrid bonding, and the drain pad and the drain electrode are electrically connected by hybrid bonding; At the heating area, the anode wiring is in direct contact with the first passivation layer, and the cathode wiring is in direct contact with the first passivation layer.

[0009] Optionally, the source pad and the source electrode are electrically connected by solder bumps, the gate pad and the gate electrode are electrically connected by solder bumps, and the drain pad and the drain electrode are electrically connected by solder bumps; At the heating area, the anode wiring contacts the first passivation layer through solder bumps, and the cathode wiring contacts the first passivation layer through solder bumps.

[0010] Optionally, the material of the solder bumps includes at least one of Au, Sn, and In.

[0011] Optionally, the material of the substrate layer is silicon, silicon carbide, gallium oxide, diamond, or gallium nitride; The material of the second epitaxial structure layer is silicon, silicon carbide, gallium oxide, diamond, or gallium nitride; The material of the cathode includes at least one of Ti / Al / Ni / Au, Ti / Al, and Ti / Au; The material of the anode is at least one of Au, Ag, Al, Pt, Ni, and Mo; The materials of the first passivation layer and the second passivation layer are at least one of SiN, Si3N4, and SiO2.

[0012] Based on the same inventive concept, the present application also provides a method for manufacturing a semiconductor device integrating a temperature measurement module and a HEMT, which is used to manufacture the above-mentioned semiconductor device integrating a temperature measurement module and a HEMT. The manufacturing method includes: Manufacturing a temperature measurement module and a HEMT device respectively. Among them, the HEMT device includes: a first epitaxial structure layer, and a source electrode, a gate electrode, a drain electrode, and a first passivation layer located on the same side surface of the first epitaxial structure layer; the gate electrode is located between the source electrode and the drain electrode, the heating area of the HEMT device is located between the gate electrode and the drain electrode, and the heating area is close to the side of the gate electrode. Among them, the first passivation layer is at least correspondingly arranged in the heating area; and the temperature measurement module includes: a substrate layer, a second epitaxial structure layer located on one side surface of the substrate layer, an anode and a cathode located on the side surface of the second epitaxial structure layer facing away from the substrate layer, a second passivation layer covering the exposed surfaces of the substrate layer and the second epitaxial structure layer on the anode side, a source pad, a gate pad, a drain pad, a source wiring, a gate wiring, a drain wiring, a cathode wiring, and an anode wiring located on the side of the second passivation layer facing away from the substrate layer; the second epitaxial structure layer, the anode, and the cathode form a Schottky diode, the source pad is electrically connected to the source wiring, the gate pad is electrically connected to the gate wiring, the drain pad is electrically connected to the drain wiring, the anode is electrically connected to the anode wiring, and the cathode is electrically connected to the cathode wiring; Bond the temperature measurement module and the HEMT device relatively, wherein the positive projection of the Schottky diode on the first passivation layer overlaps at least partially with the heating area, the source pad is electrically connected to the source, the gate pad is electrically connected to the gate, and the drain pad is electrically connected to the drain.

[0013] Optionally, the relative bonding of the temperature measurement module and the HEMT device includes: Grind the surface of the temperature measurement module on the side with the gate pad and the surface of the HEMT device on the side with the gate. Adjust the relative alignment relationship between the temperature measurement module and the HEMT device, wherein the source is aligned with the source pad, the gate is aligned with the gate pad, the drain is aligned with the drain pad, and the anode wiring and the cathode wiring are aligned with the heating area. Bond the temperature measurement module and the HEMT device using a hybrid bonding process.

[0014] Optionally, the relative bonding of the temperature measurement module and the HEMT device includes: Grow solder bumps on the source pad, the gate pad, the drain pad, the cathode wiring, and the anode wiring respectively. Adjust the relative alignment relationship between the temperature measurement module and the HEMT device, wherein the source is aligned with the solder bump on the source pad, the gate is aligned with the solder bump on the gate pad, the drain is aligned with the solder bump on the drain pad, and the solder bumps on the anode wiring and the solder bumps on the cathode wiring are aligned with the heating area. Bond the temperature measurement module and the HEMT device.

[0015] Compared with the prior art, the technical solution provided by this application has at least the following advantages: The present application provides a semiconductor device integrating a temperature measurement module and a HEMT, and a manufacturing method thereof. The semiconductor device includes a temperature measurement module and a HEMT device bonded to each other. In the temperature measurement module, a source pad is electrically connected to the source of the HEMT device, a gate pad is electrically connected to the gate of the HEMT device, and a drain pad is electrically connected to the drain of the HEMT device. Thus, the source wiring, the gate wiring, and the drain wiring are set as external pins of the HEMT device and are electrically connected to external circuits to enable the normal operation of the HEMT device. On this basis, the Schottky diode of the temperature measurement module is arranged corresponding to the heat generation area of the HEMT, and according to the characteristic that the forward voltage of the Schottky diode changes with temperature, the junction temperature of the HEMT device can be measured. At the same time, the Schottky diode provided in the present application is integrated in the temperature measurement module and is electrically isolated from the HEMT device through the first passivation layer in the HEMT device. Therefore, there is no need to switch between the working state and the test state of the semiconductor device, thereby achieving the purpose of monitoring the junction temperature of the HEMT device in real time and accurately. Description of the Drawings

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only the embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained according to the provided drawings without creative efforts.

[0017] Figure 1 It is a schematic structural diagram of a semiconductor device integrating a temperature measurement module and a HEMT provided by an embodiment of the present application; Figure 2 It is a schematic structural diagram of a temperature measurement module provided by an embodiment of the present application; Figure 3 It is a schematic structural diagram of a Schottky diode provided by an embodiment of the present application; Figure 4 It is a schematic structural diagram of another semiconductor device integrating a temperature measurement module and a HEMT provided by an embodiment of the present application; Figure 5 It is a flowchart of a manufacturing method of a semiconductor device integrating a temperature measurement module and a HEMT provided by an embodiment of the present application.

[0018] Reference Signs: 100 - Temperature measurement module; 200 - HEMT device; 210 - First epitaxial structure layer; 221 - Source electrode; 222 - Gate electrode; 223 - Drain electrode; 224 - First passivation layer; S1 - Heating area; 110 - Substrate layer; 120 - Second epitaxial structure layer; 131 - Anode; 132 - Cathode; 140 - Second passivation layer; 151 - Source pad; 152 - Gate pad; 153 - Drain pad; 161 - Source wiring; 162 - Gate wiring; 163 - Drain wiring; 171 - Anode wiring; 172 - Cathode wiring; 300 - Solder bump. Detailed implementation manners

[0019] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0020] As described in the background art, HEMT devices have excellent characteristics such as high power, high frequency, and low noise. Compared with silicon-based devices, HEMT devices provide faster switching speeds and higher operating frequencies, and can achieve higher output power, higher power density, smaller volume, and controllable costs. They are widely used in fields such as 5G communication, satellites, and power electronics.

[0021] With the continuous improvement of performance requirements, HEMT devices usually operate under high-frequency and high-power conditions. And with the improvement of system integration, the device is required to be more miniaturized, which inevitably brings greater power dissipation. Due to the limitation of heat conduction, the heat generated by the current passing through the device cannot be dissipated in time, resulting in an increase in the internal temperature of the device. This phenomenon is called the "self-heating effect". The occurrence of the self-heating effect will reduce the carrier mobility and saturation velocity of the device because the excitation of hot electrons and the scattering of phonons increase with the increase in temperature. In addition, the self-heating effect may also cause the drift of the threshold voltage of the HEMT device, resulting in a decrease in transconductance, thereby affecting the switching characteristics and amplification performance of the device. In addition, the self-heating effect will also cause the generation of local hot spots, which may become the starting point of device failures. Working at high temperatures for a long time will accelerate the aging process of the device material and shorten the service life of the device. In extreme cases, too high a temperature may even cause the device to burn out. Therefore, in order to reduce the adverse effects of the self-heating effect, it is necessary to monitor the junction temperature of the HEMT device, and then take corresponding measures in a timely manner according to the monitoring results.

[0022] In recent years, the optical method and the temperature-sensitive electrical parameter method have been widely used for monitoring the junction temperature of HEMT devices. When using the optical method to measure temperature, the device package needs to be damaged to allow incident light to contact the device and receive the reflected light. The temperature-sensitive electrical parameter method, on the other hand, utilizes the relationship between the electrical parameters of HEMT devices and temperature. Many electrical parameters of HEMT devices are related to temperature, such as the forward voltage of the HEMT gate-source Schottky diode, the on-resistance of the HEMT channel, and the gate resistance of the HEMT. The change in device temperature can be reflected in the change of electrical parameters. The temperature-sensitive electrical parameter method uses the HEMT device itself as a temperature sensor, and most temperature-sensitive electrical parameter measurement methods include two steps: calibration and temperature measurement. Among them, the dependence relationship between the electrical parameters and temperature is obtained through the calibration step, and then the change in electrical parameters is converted into the change in temperature in the temperature measurement step to extract the device junction temperature. The temperature-sensitive electrical parameter method has the advantages of fast response speed, no need to damage the device package, and can monitor the device junction temperature online. Moreover, only by selecting appropriate temperature-sensitive parameters according to the device structure and principle, without complex operations, so it is the main method for monitoring the device junction temperature.

[0023] However, the temperature-sensitive electrical parameter method uses the change of temperature-sensitive parameters to reflect the temperature change of the device. The accuracy of this temperature measurement method depends on the accuracy of the measurement of temperature-sensitive electrical parameters. If the results of the measurement and calculation of temperature-sensitive electrical parameters are inaccurate, then the final obtained junction temperature is also inaccurate. At the same time, the inventors have found that the area with the highest temperature of the HEMT device is the side where the gate faces the drain, and a small area near the gate. The junction temperature measured by the temperature-sensitive electrical parameter method is the average temperature of the entire device area, which will lead to an underestimation of the peak temperature of the HEMT. In addition, this method also has the following problems: since the temperature-sensitive electrical parameter method regards the HEMT device itself as a temperature sensor, if you want to measure the junction temperature of a working HEMT device online in real time, the HEMT needs to be switched from the working state to the test state, and then quickly switched back to the working state after the test. This poses extremely high requirements for the fast switching ability of the test instrument. At the same time, during the switching process, there will inevitably be a part of heat dissipation, resulting in the measured junction temperature being slightly lower than the true peak junction temperature.

[0024] Based on this, the embodiments of the present application provide a semiconductor device and a preparation method integrating a temperature measurement module and a HEMT, effectively solving the existing technical problems and achieving the purpose of measuring the junction temperature of the HEMT device in real time and accurately.

[0025] To achieve the above object, the technical solutions provided by the embodiments of the present application are as follows, specifically combined with Figures 1 to 5 A detailed description of the technical solutions provided by the embodiments of the present application is given.

[0026] Combined with Figures 1 to 3 As shown, Figure 1Schematic structural diagram of an integrated temperature measurement module and a semiconductor device of a HEMT provided by an embodiment of the present application Figure 2 Schematic structural diagram of a temperature measurement module provided by an embodiment of the present application Figure 3 Schematic structural diagram of a Schottky diode provided by an embodiment of the present application. The integrated temperature measurement module and the semiconductor device of the HEMT provided by the embodiment of the present application include: A temperature measurement module 100 and a HEMT device 200 bonded to each other. The HEMT device 200 includes: a first epitaxial structure layer 210, and a source electrode 221, a gate electrode 222, a drain electrode 223, and a first passivation layer 224 located on a surface of the first epitaxial structure layer 210 facing the temperature measurement module 100; the gate electrode 222 is located between the source electrode 221 and the drain electrode 223, a heating area S1 of the HEMT device 200 is located between the gate electrode 222 and the drain electrode 223, and the heating area S1 is close to the gate electrode 222 side, wherein the first passivation layer 224 is at least correspondingly disposed on the heating area S1. The heating area S1 is the corresponding area where the peak junction temperature of the HEMT device 200 appears, which is located on the side close to the gate electrode 222 at the middle position between the gate electrode 222 and the drain electrode 223. The distance between the heating area S1 and the gate electrode 222 is less than the distance from the drain electrode 223, and the specific area position needs to be analyzed according to the actual application.

[0027] The temperature measurement module 100 includes: a substrate layer 110, a second epitaxial structure layer 120 located on one surface of the substrate layer 110 facing the HEMT device 200, an anode 131 and a cathode 132 located on one surface of the second epitaxial structure layer 120 facing the HEMT device 200, with a gap between the anode 131 and the cathode 132, a second passivation layer 140 covering the exposed surface of the substrate layer 110 facing the HEMT device 200 and the exposed surface of the second epitaxial structure layer 120, a source pad 151, a gate pad 152, a drain pad 153, a source wiring 161, a gate wiring 162, a drain wiring 163, a cathode wiring 172 and an anode wiring 171 located on one side of the second passivation layer 140 facing the HEMT device 200. The second epitaxial structure layer 120, the anode 131 and the cathode 132 form a Schottky diode. The source pad 151 is electrically connected to the source wiring 161, the gate pad 152 is electrically connected to the gate wiring 162, the drain pad 153 is electrically connected to the drain wiring 163, the anode 131 is electrically connected to the anode wiring 171, and the cathode 132 is electrically connected to the cathode wiring 172. The orthographic projection of the Schottky diode on the first passivation layer 224 at least partially overlaps with the heating area S1. The source pad 151 is electrically connected to the source 221, the gate pad 152 is electrically connected to the gate 222, and the drain pad 153 is electrically connected to the drain 223.

[0028] Optionally, the side of the second passivation layer 140 facing away from the substrate layer 110 has corresponding groove structures, such as a source groove, a gate groove, a drain groove, an anode groove and a cathode groove. The source pad 151 and the source wiring 161 are arranged in the source groove, the gate pad 152 and the gate wiring 162 are arranged in the gate groove, and the drain pad 153 and the drain wiring 163 are arranged in the drain groove. The anode groove exposes the anode 131, and the anode wiring 171 is arranged in the anode groove, and the anode wiring 171 is in contact electrical connection with the anode 131. Similarly, the cathode groove exposes the cathode 132, and the cathode wiring 172 is arranged in the cathode groove, and the cathode wiring 172 is in contact electrical connection with the cathode 132. In addition, in the direction perpendicular to the plane of the substrate layer 110, the surfaces of the source pad 151, the gate pad 152, the drain pad 153, the source wiring 161, the gate wiring 162, the drain wiring 163, the cathode wiring 172 and the anode wiring 171 facing away from the substrate layer 110 may be flush with the surface of the second passivation layer 140 facing away from the substrate layer 110, or may protrude from the surface of the second passivation layer 140 facing away from the substrate layer 110. This application does not make specific limitations on this.

[0029] As can be seen from the above, the semiconductor device includes a temperature measurement module 100 and a HEMT device 200 that are relatively bonded. In the temperature measurement module 100, the source pad 151 is electrically connected to the source 221 of the HEMT device 200, the gate pad 152 in the temperature measurement module 100 is electrically connected to the gate 222 of the HEMT device 200, and the drain pad 153 in the temperature measurement module 100 is electrically connected to the drain 223 of the HEMT device 200. Thus, the source wiring 161, the gate wiring 162, and the drain wiring 163 are set as external pins of the HEMT device 200 and are electrically connected to external circuits to enable the normal operation of the HEMT device 200. On this basis, the Schottky diode of the temperature measurement module 100 is arranged corresponding to the heat generation area S1 of the HEMT device 200. Through heat transfer, the heat generated by the operation of the HEMT device 200 can be transferred to the Schottky diode, and according to the characteristic that the forward voltage of the Schottky diode changes with temperature, the junction temperature of the HEMT device 200 can be measured. At the same time, the Schottky diode provided in the embodiment of the present application is integrated in the temperature measurement module 100 and is electrically isolated from the HEMT device 200 through the first passivation layer 224 in the HEMT device 200. Therefore, there is no need to switch between the working state and the test state of the semiconductor device, thereby achieving the purpose of real-time and accurate monitoring of the junction temperature of the HEMT device 200. Based on the above temperature measurement principle, the semiconductor device provided in the embodiment of the present application also does not need to damage the packaging structure of the HEMT device 200. Optionally, the Schottky diode and the heat generation area S1 are aligned in the direction perpendicular to the plane of the vertical substrate layer 110, further improving the monitoring accuracy of the junction temperature of the HEMT device 200.

[0030] In some embodiments, the first passivation layer 224 provided in the embodiment of the present application covers the exposed surface of the first epitaxial structure layer 210 facing the temperature measurement module 100. The first passivation layer 224 covers the surface of the first epitaxial structure layer 210 facing the temperature measurement module 100, and the first passivation layer 224 includes a source via, a gate via, and a drain via. The source via is filled with the source 221, the gate via is filled with the gate 222, and the drain via is filled with the drain 223. Increasing the coverage area of the first passivation layer 224 can avoid the problem of short circuit between the circuit in the temperature measurement module 100 and the first epitaxial structure layer 210 when the temperature measurement module 100 and the HEMT device 200 are bonded, and improves the reliability of the semiconductor device. Optionally, the thickness range of the first passivation layer 224 provided in the embodiment of the present application is 50 - 400 nm.

[0031] Continue as Figure 1As shown, at the heating area S1, the anode 131 is in thermal transfer contact with the first passivation layer 224 through the anode wiring 171, and the cathode 132 is in thermal transfer contact with the first passivation layer 224 through the cathode wiring 172. Among them, when the temperature measurement module 100 and the HEMT device 200 are bonded, the anode wiring 171 and the cathode wiring 172 are in contact with the first passivation layer 224 at the heating area S1, so as to achieve the purpose of thermal transfer contact between the HEMT device 200 and the anode 131 and the cathode 132. And as Figure 2 shown, the anode wiring 171 provided in the embodiment of the present application can be provided with a pad structure in contact connection with the anode 131, and the cathode wiring 172 is provided with a pad structure in contact connection with the cathode 132, wherein the pad structures are correspondingly located at the heating area S1, so as to increase the contact area between the anode wiring 171 and the cathode wiring 172 and the first passivation layer 224 at the heating area S1, so as to achieve a better thermal transfer effect between the Schottky diode and the HEMT device 200 and improve the accuracy of the junction temperature measurement of the HEMT device 200.

[0032] In some embodiments, the circuit between the temperature measurement module 100 and the HEMT device 200 provided in the embodiment of the present application can be directly contact-bonded to achieve electrical connection. At this time, the anode wiring 171 and the cathode wiring 172 are in direct contact with the first passivation layer 224, and the thermal transfer effect is achieved. Continuing as Figure 1 shown, the source pad 151 is hybrid-bonded and electrically connected to the source 221, the gate pad 152 is hybrid-bonded and electrically connected to the gate 222, and the drain pad 153 is hybrid-bonded and electrically connected to the drain 223, so that the source pad 151 is directly contact-bonded to the source 221, the gate pad 152 is directly contact-bonded to the gate 222, and the drain pad 153 is directly contact-bonded to the drain 223. At the heating area S1, the anode wiring 171 is in direct contact with the first passivation layer 224 to achieve thermal transfer, and the cathode wiring 172 is in direct contact with the first passivation layer 224 to achieve thermal transfer.

[0033] Or in some other embodiments, the circuit between the temperature measurement module 100 and the HEMT device 200 provided in the embodiment of the present application can also be electrically connected by solder bonding. At this time, the anode wiring 171 and the cathode wiring 172 also need to be indirectly contacted with the first passivation layer 224 through solder to achieve the thermal transfer effect. Refer to Figure 4As shown, it is a schematic structural diagram of another integrated temperature measurement module and a semiconductor device of HEMT provided by an embodiment of the present application. Among them, the source pad 151 is electrically connected to the source 221 through a solder bump 300, the gate pad 152 is electrically connected to the gate 222 through a solder bump 300, and the drain pad 153 is electrically connected to the drain 223 through a solder bump 300, so that indirect contact bonding is achieved between the source pad 151 and the source 221, between the gate pad 152 and the gate 222, and between the drain pad 153 and the drain 223. And at the heating area S1, the anode wiring 171 is in contact with the first passivation layer 224 through a solder bump 300, and the cathode wiring 172 is in contact with the first passivation layer 224 through a solder bump 300, so that indirect contact is achieved between the anode wiring 171 and the cathode wiring 172 and the first passivation layer 224, and the effect of heat transfer is realized. Optionally, in the HEMT device 200 provided by the embodiment of the present application, the source 221, the gate 222, and the drain 223 may protrude beyond the first passivation layer 224; that is, in the direction perpendicular to the plane of the substrate layer 110, the thicknesses of the source 221, the gate 222, and the drain 223 are greater than the thickness of the first passivation layer 224, so that the surfaces of the source 221, the gate 222, and the drain 223 facing the temperature measurement module 100 are higher than the surface of the first passivation layer 224 facing the temperature measurement module 100, facilitating the alignment bonding of the solder bumps 300. At this time, the solder bumps 300 corresponding to the anode wiring 171 and the cathode wiring 172 provided by the embodiment of the present application are higher than the solder bumps 300 on the source pad 151, the gate pad 152, and the drain pad 153 in the direction perpendicular to the plane of the substrate layer 110, to ensure that the solder bumps 300 corresponding to the anode wiring 171 and the cathode wiring 172 can be in contact connection with the first passivation layer 224, and the contact heat conduction effect is realized.

[0034] In some embodiments, the material of the solder bump 300 provided in the embodiments of the present application includes at least one of Au, Sn, and In. When the material of the solder bump 300 is In, since the In material is relatively soft, using it as the solder material will not damage the HEMT device 200, improving the bonding performance between the temperature measurement module 100 and the HEMT device 200. Optionally, the material of the substrate layer 110 provided in the embodiments of the present application is silicon, silicon carbide, gallium oxide, diamond, or gallium nitride. The material of the second epitaxial structure layer 120 is silicon, silicon carbide, gallium oxide, diamond, or gallium nitride. The source pad 151, gate pad 152, drain pad 153, source wiring 161, gate wiring 162, drain wiring 163, anode wiring 171, and cathode wiring 172 can all be metal materials. In addition, the material of the cathode 132 provided in the embodiments of the present application includes at least one of Ti / Al / Ni / Au, Ti / Al, and Ti / Au, or can be a metal material that forms an ohmic contact with the second epitaxial structure layer 120; and the material of the anode 131 is at least one of Au, Ag, Al, Pt, Ni, Mo, or can be a metal material that forms a Schottky contact with the second epitaxial structure layer 120. The materials of the first passivation layer 224 and the second passivation layer 140 are at least one of SiN, Si3N4, and SiO2, and the present application does not make specific limitations on this.

[0035] Based on the same inventive concept, the embodiments of the present application further provide a method for manufacturing a semiconductor device integrating a temperature measurement module and a HEMT, which is used to manufacture the semiconductor device integrating a temperature measurement module and a HEMT provided in any of the above embodiments. Refer to Figure 5 As shown, it is a flowchart of a method for manufacturing a semiconductor device integrating a temperature measurement module and a HEMT provided in the embodiments of the present application, and the manufacturing method includes: Step S1': Prepare a temperature measurement module 100 and a HEMT device 200 respectively. Among them, the HEMT device 200 includes: a first epitaxial structure layer 210, and a source electrode 221, a gate electrode 222, a drain electrode 223, and a first passivation layer 224 located on the same side surface of the first epitaxial structure layer 210; the gate electrode 222 is located between the source electrode 221 and the drain electrode 223, and the heating area S1 of the HEMT device 200 is located between the gate electrode 222 and the drain electrode 223, and the heating area S1 is close to the side of the gate electrode 222. Among them, the first passivation layer 224 is at least correspondingly disposed on the heating area S1. In addition, the temperature measurement module 100 includes: a substrate layer 110, a second epitaxial structure layer 120 located on one side surface of the substrate layer 110, an anode 131 and a cathode 132 located on the side surface of the second epitaxial structure layer 120 facing away from the substrate layer 110, a second passivation layer 140 covering the exposed surfaces of the substrate layer 110 and the second epitaxial structure layer 120 on the side of the anode 131, a source pad 151, a gate pad 152, a drain pad 153, a source wiring 161, a gate wiring 162, a drain wiring 163, a cathode wiring 172, and an anode wiring 171 located on the side of the second passivation layer 140 facing away from the substrate layer 110; the second epitaxial structure layer 120, the anode 131, and the cathode 132 form a Schottky diode, the source pad 151 is electrically connected to the source wiring 161, the gate pad 152 is electrically connected to the gate wiring 162, the drain pad 153 is electrically connected to the drain wiring 163, the anode 131 is electrically connected to the anode wiring 171, and the cathode 132 is electrically connected to the cathode wiring 172.

[0036] Step S2': Bond the temperature measurement module 100 and the HEMT device 200 relatively. Among them, the positive projection of the Schottky diode on the first passivation layer 224 at least partially overlaps with the heating area S1, the source pad 151 is electrically connected to the source electrode 221, the gate pad 152 is electrically connected to the gate electrode 222, and the drain pad 153 is electrically connected to the drain electrode 223. That is, the side of the temperature measurement module 100 having the source pad 151, the gate pad 152, the drain pad 153, the source wiring 161, the gate wiring 162, the drain wiring 163, the cathode wiring 172, and the anode wiring 171 is aligned relatively with the side of the HEMT device 200 having the source electrode 221, the gate electrode 222, the drain electrode 223, and the first passivation layer 224. Specifically, it is the alignment of the source pad 151 and the source electrode 221, the alignment of the gate pad 152 and the gate electrode 222, the alignment of the drain pad 153 and the drain electrode 223, the alignment of the anode wiring 171 and the cathode wiring 172 with the heating area S1, and then bonding is performed to form a semiconductor device.

[0037] For the devices of the temperature measurement module 100 and the HEMT device 200, the semiconductor device integrating the temperature measurement module and the HEMT provided by the embodiments of the present application does not need to damage the packaging structure of the HEMT device 200. Therefore, the HEMT device 200 can be fabricated by existing fabrication methods, and no redundant elaboration will be made in this application. The fabrication process of the temperature measurement module 100 includes: Step S11: Use the CVD (Chemical Vapor Deposition) process to grow an initial second epitaxial structure layer on the substrate layer 110.

[0038] Step S12: Etch the initial second epitaxial structure layer through photolithography and ICP (Inductively Coupled Plasma) etching processes to form the second epitaxial structure layer 120.

[0039] Step S13: Use the lift-off process (metal lift-off process) to form the anode 131 and the cathode 132 on the second epitaxial structure layer 120. Herein, the anode 131 and the cathode 132 can be fabricated simultaneously or in separate steps, and no specific limitation is made in this application.

[0040] Step S14: Use the CVD process to cover the exposed surface on the side of the substrate layer 110 and the second epitaxial structure layer 120 where the anode 131 is located with the second passivation layer 140, and use the CMP (Chemical Mechanical Polishing) process to flatten the surface of the second passivation layer 140.

[0041] Step S15: Through processes such as photolithography, etching, evaporation, or sputtering, form a groove on the surface of the second passivation layer 140 facing away from the substrate layer 110, and grow metal to fabricate the source pad 151, the gate pad 152, the drain pad 153, the source wiring 161, the gate wiring 162, the drain wiring 163, the cathode wiring 172, and the anode wiring 171, thereby obtaining the temperature measurement module 100.

[0042] After the temperature measurement module 100 and the HEMT device 200 are prepared, the temperature measurement module 100 and the HEMT device 200 need to be aligned and bonded. In some embodiments, the circuits between the temperature measurement module 100 and the HEMT device 200 provided in the embodiments of the present application can be directly contact-bonded to achieve electrical connection. At this time, the anode wiring 171 and the cathode wiring 172 are in direct contact with the first passivation layer 224, thereby achieving the effect of heat transfer. That is to say, the relative bonding of the temperature measurement module 100 and the HEMT device 200 includes: grinding the surface of the side of the temperature measurement module 100 with the gate pad 152 and the surface of the side of the HEMT device 200 with the gate 222; then adjusting the relative alignment relationship between the temperature measurement module 100 and the HEMT device 200, wherein the source 221 is aligned with the source pad 151, the gate 222 is aligned with the gate pad 152, the drain 223 is aligned with the drain pad 153, and the anode wiring 171 and the cathode wiring 172 are aligned with the heating area S1. Finally, a flip-chip bonder is used to bond the temperature measurement module 100 and the HEMT device 200 by applying pressure and temperature using a hybrid bonding process.

[0043] Or in some other embodiments, the circuits between the temperature measurement module 100 and the HEMT device 200 provided in the embodiments of the present application can also be electrically connected by solder bonding. At this time, the anode wiring 171 and the cathode wiring 172 also need to be indirectly contacted with the first passivation layer 224 through solder, thereby achieving the heat transfer effect. That is to say, the relative bonding of the temperature measurement module 100 and the HEMT device 200 includes: growing solder bumps 300 on the source pad 151, the gate pad 152, the drain pad 153, the cathode wiring 172, and the anode wiring 171 respectively. Then adjusting the relative alignment relationship between the temperature measurement module 100 and the HEMT device 200, wherein the source 221 is aligned with the solder bump 300 of the source pad 151, the gate 222 is aligned with the solder bump 300 of the gate pad 152, the drain 223 is aligned with the solder bump 300 of the drain pad 153, and the solder bumps 300 of the anode wiring 171 and the solder bumps 300 of the cathode wiring 172 are aligned with the heating area S1. Finally, a flip-chip bonder is used to bond the temperature measurement module 100 and the HEMT device 200 by applying pressure and temperature.

[0044] In summary, the embodiments of the present application provide a semiconductor device integrating a temperature measurement module and a HEMT, and a manufacturing method thereof. The semiconductor device includes a temperature measurement module and a HEMT device bonded to each other. In the temperature measurement module, the source pad is electrically connected to the source of the HEMT device, the gate pad is electrically connected to the gate of the HEMT device, and the drain pad is electrically connected to the drain of the HEMT device. Thus, the source wiring, the gate wiring, and the drain wiring are set as external pins of the HEMT device and are electrically connected to external circuits to enable the normal operation of the HEMT device. On this basis, the Schottky diode of the temperature measurement module is arranged corresponding to the heating area of the HEMT, and according to the characteristic that the forward voltage of the Schottky diode changes with temperature, the junction temperature of the HEMT device can be measured. At the same time, the Schottky diode provided by the embodiments of the present application is integrated in the temperature measurement module and is electrically isolated from the HEMT device through the first passivation layer in the HEMT device. Therefore, there is no need to switch between the working state and the test state of the semiconductor device, thereby achieving the purpose of real-time and accurate monitoring of the junction temperature of the HEMT device.

[0045] In the description of the embodiments of the present application, it should be understood that terms such as "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the embodiments of the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present application.

[0046] In addition, terms such as "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the embodiments of the present application, "a plurality" means at least two, such as two, three, etc., unless otherwise specifically and clearly defined.

[0047] In the embodiments of the present application, unless otherwise clearly specified or limited, terms such as "installed", "connected", "coupled", "fixed", etc. shall be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection, an electrical connection, or communicable with each other; it may be directly connected, or indirectly connected through an intermediate medium, and may be the communication inside two elements or the interaction relationship between two elements, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0048] In the embodiments of the present application, unless otherwise clearly specified or limited, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on top of" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "beneath" and "underneath" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0049] In the embodiments of the present application, terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. In addition, without conflict, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0050] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present application. Those of ordinary skill in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present application.

Claims

1. An integrated temperature measurement module and a semiconductor device of HEMT, characterized in that, Comprising: A relatively bonded temperature measurement module and a HEMT device; The HEMT device includes: a first epitaxial structure layer, and a source electrode, a gate electrode, a drain electrode, and a first passivation layer located on a surface of the first epitaxial structure layer facing the temperature measurement module; the gate electrode is located between the source electrode and the drain electrode, the heating area of the HEMT device is located between the gate electrode and the drain electrode, and the heating area is close to the side of the gate electrode, wherein the first passivation layer is at least correspondingly disposed on the heating area; The temperature measurement module includes: a substrate layer, a second epitaxial structure layer located on a surface of the substrate layer facing the HEMT device, an anode and a cathode located on a surface of the second epitaxial structure layer facing the HEMT device, a second passivation layer covering the exposed surface of the substrate layer facing the HEMT device and covering the exposed surface of the second epitaxial structure layer, a source pad, a gate pad, a drain pad, a source wiring, a gate wiring, a drain wiring, a cathode wiring, and an anode wiring located on a side of the second passivation layer facing the HEMT device; the second epitaxial structure layer, the anode, and the cathode form a Schottky diode, the source pad is electrically connected to the source wiring, the gate pad is electrically connected to the gate wiring, the drain pad is electrically connected to the drain wiring, the anode is electrically connected to the anode wiring, and the cathode is electrically connected to the cathode wiring; The positive projection of the Schottky diode on the first passivation layer at least partially overlaps with the heating area, the source pad is electrically connected to the source electrode, the gate pad is electrically connected to the gate electrode, and the drain pad is electrically connected to the drain electrode.

2. The integrated temperature measurement module and the semiconductor device of HEMT according to claim 1, characterized in that The first passivation layer covers the exposed surface of the first epitaxial structure layer facing the temperature measurement module; The thickness range of the first passivation layer is 50 - 400 nm.

3. The integrated temperature measurement module and the semiconductor device of HEMT according to claim 1, characterized in that, At the heating area, the anode realizes heat transfer contact with the first passivation layer through the anode wiring, and the cathode realizes heat transfer contact with the first passivation layer through the cathode wiring.

4. The integrated temperature measurement module and the semiconductor device of HEMT according to claim 3, characterized in that, The source pad and the source electrode are electrically connected by hybrid bonding, the gate pad and the gate electrode are electrically connected by hybrid bonding, and the drain pad and the drain electrode are electrically connected by hybrid bonding; At the heating area, the anode wiring is in direct contact with the first passivation layer, and the cathode wiring is in direct contact with the first passivation layer.

5. The integrated temperature measurement module and the semiconductor device of HEMT according to claim 3, characterized in that, The source pad and the source electrode are electrically connected through solder bumps, the gate pad and the gate electrode are electrically connected through solder bumps, and the drain pad and the drain electrode are electrically connected through solder bumps; At the heating area, the anode wiring and the first passivation layer are in contact through solder bumps, and the cathode wiring and the first passivation layer are in contact through solder bumps.

6. The integrated temperature measurement module and the semiconductor device of HEMT according to claim 5, characterized in that, The material of the solder bumps includes at least one of Au, Sn, and In; 7. The integrated temperature measurement module and the semiconductor device of HEMT according to claim 1, characterized in that, The material of the substrate layer is silicon, silicon carbide, gallium oxide, diamond, or gallium nitride; The material of the second epitaxial structure layer is silicon, silicon carbide, gallium oxide, diamond, or gallium nitride; The material of the cathode includes at least one of Ti / Al / Ni / Au, Ti / Al, and Ti / Au; The material of the anode is at least one of Au, Ag, Al, Pt, Ni, and Mo; The material of the first passivation layer and the second passivation layer is at least one of SiN, Si3N4, and SiO2.

8. A preparation method of a semiconductor device integrating a temperature measurement module and a HEMT, characterized in that, For the semiconductor device for preparing the integrated temperature measurement module and HEMT described in any one of claims 1-7, the preparation method includes: Preparing a temperature measurement module and a HEMT device respectively, wherein the HEMT device includes: a first epitaxial structure layer, and a source electrode, a gate electrode, a drain electrode, and a first passivation layer located on the same side surface of the first epitaxial structure layer; the gate electrode is located between the source electrode and the drain electrode, the heating area of the HEMT device is located between the gate electrode and the drain electrode, and the heating area is close to the side of the gate electrode, wherein the first passivation layer is at least correspondingly arranged on the heating area; and the temperature measurement module includes: a substrate layer, a second epitaxial structure layer located on one side surface of the substrate layer, an anode and a cathode located on the side surface of the second epitaxial structure layer facing away from the substrate layer, a second passivation layer covering the exposed surfaces of the substrate layer and the second epitaxial structure layer on the anode side, a source pad, a gate pad, a drain pad, a source wiring, a gate wiring, a drain wiring, a cathode wiring, and an anode wiring located on the side of the second passivation layer facing away from the substrate layer; the second epitaxial structure layer, the anode, and the cathode form a Schottky diode, the source pad is electrically connected to the source wiring, the gate pad is electrically connected to the gate wiring, the drain pad is electrically connected to the drain wiring, the anode is electrically connected to the anode wiring, and the cathode is electrically connected to the cathode wiring; Bonding the temperature measurement module and the HEMT device relatively, wherein the positive projection of the Schottky diode on the first passivation layer at least partially overlaps with the heating area, the source pad is electrically connected to the source electrode, the gate pad is electrically connected to the gate electrode, and the drain pad is electrically connected to the drain electrode.

9. The preparation method of the integrated temperature measurement module and the semiconductor device of HEMT according to claim 8, characterized in that, The bonding the temperature measurement module and the HEMT device relatively includes: Grinding the surface of the temperature measurement module on the side with the gate pad and the surface of the HEMT device on the side with the gate electrode; Adjusting the relative alignment relationship between the temperature measurement module and the HEMT device, wherein the source electrode is aligned with the source pad, the gate electrode is aligned with the gate pad, the drain electrode is aligned with the drain pad, and the anode wiring and the cathode wiring are aligned with the heating area; Bonding the temperature measurement module and the HEMT device by using a hybrid bonding process.

10. The manufacturing method of the integrated temperature measurement module and the semiconductor device of HEMT according to claim 8, wherein, The bonding the temperature measurement module and the HEMT device relatively includes: Growing solder bumps on the source pad, the gate pad, the drain pad, the cathode wiring, and the anode wiring respectively; Adjust the relative alignment relationship between the temperature measurement module and the HEMT device, wherein the source electrode is aligned with the solder bump of the source pad, the gate electrode is aligned with the solder bump of the gate pad, the drain electrode is aligned with the solder bump of the drain pad, and the solder bumps of the anode wiring and the solder bumps of the cathode wiring are aligned with the heating area; Bond the temperature measurement module and the HEMT device.

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