Optical module

Abstract

This optical module is provided with: a socket (1); a pedestal section (20) that is disposed on the surface (1a) side of the socket and that has a bottom surface section (20a) that faces the surface (1a) of the socket and a side surface section (20b) that extends in a direction perpendicular to the surface (1a) of the socket; a secondary base (30) provided on a side surface section (20b) of the pedestal section; a semiconductor optical integrated element (50) that is provided on the secondary base (30) and is configured from electrically independent parts of a semiconductor laser unit (50a), an optical modulator unit (50b), and an optical amplifier unit (50c) from the surface (1a) side of the base; a semiconductor laser unit capacitor (60) connected to the semiconductor laser unit (50a); an optical modulator unit capacitor (61) connected to the optical modulator unit (50b); and an optical amplifier unit capacitor (62) connected to the optical amplifier unit (50c).

Description

Technical Field

[0001] The present disclosure relates to an optical module. Background Art

[0002] In recent years, with the popularization of various information terminals and the cloudification of information, etc., the data communication volume has been showing an increasing trend. In order to meet the need for the increasing data communication volume, the high-speed and large-capacity of the transmission speed in the base station of optical fiber communication is being promoted.

[0003] As a light source for long-distance optical fiber communication such as optical fiber communication, a semiconductor optical integrated element (Patent Document 1) in which a semiconductor laser section, an optical modulator section, and an optical amplifier section are integrated into a single chip is used. The optical modulator section is a kind of external modulator, and compared with the direct modulation method of directly modulating the laser intensity, the deterioration of the signal waveform is less, so high-speed and long-distance optical fiber transmission can be achieved. In addition, the optical amplifier section functions to amplify the modulated light.

[0004] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2022-099537

[0005] In the optical module described in Patent Document 1, the capacitor for the semiconductor laser section and the capacitor for the optical amplification section are made common and only one is arranged. In addition, the mounting direction of the semiconductor optical integrated element is inclined with respect to the direction perpendicular to the surface of the header.

[0006] In the optical module described in Patent Document 1, since the semiconductor laser section and the optical amplification section are electrically connected in parallel, the same current flows through the semiconductor laser section and the optical amplification section, so there is a practical problem that it is difficult to control the two independently. Summary of the Invention

[0007] The present disclosure is made to solve the above problems, and an object thereof is to obtain an optical module with high controllability of current and capable of miniaturization.

[0008] The optical module according to the present disclosure includes:

[0009] A pedestal portion, disposed on the surface side of the above-mentioned header, and having a bottom surface portion facing the surface of the above-mentioned header and side surface portions extending along a direction perpendicular to the surface of the above-mentioned header;

[0010] A sub-base, provided on the side surface portion of the above-mentioned pedestal portion;

[0011] A semiconductor optical integrated element, provided on the above-mentioned sub-base, and composed of electrically independent parts including a semiconductor laser section, an optical modulator section, and an optical amplifier section starting from the bottom surface portion side of the pedestal portion;

[0012] A capacitor for a semiconductor laser section is connected to the semiconductor laser section of the semiconductor optical integrated element described above;

[0013] A capacitor for an optical modulator section is connected to the optical modulator section of the semiconductor optical integrated element; and

[0014] A capacitor for an optical amplifier section is connected to the optical amplifier section of the semiconductor optical integrated element.

[0015] In the optical module according to the present disclosure, since currents flow independently via capacitors respectively electrically connected to the semiconductor laser section, the optical modulator section, and the optical amplifier section of the mounted semiconductor optical integrated element, there is an effect that an optical module with high controllability of current and capable of miniaturization can be obtained. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a schematic diagram of the optical module according to Embodiment 1.

[0017] Figure 2 is a side view of the optical module according to Embodiment 1.

[0018] Figure 3 is a side view of the optical module according to Embodiment 1.

[0019] Figure 4 is a cross-sectional view of a semiconductor optical integrated element that is part of the optical module according to Embodiment 1.

[0020] Figure 5 is a schematic diagram of a CAN package that is part of the optical module according to Embodiment 1.

[0021] Figure 6 is a schematic diagram of the optical module according to Embodiment 2.

[0022] Figure 7 is a side view of the optical module according to Embodiment 2.

[0023] Figure 8 is a side view of the optical module according to Embodiment 2.

[0024] Figure 9 is a schematic diagram of the optical module according to Embodiment 3.

[0025] Figure 10 is a side view of the optical module according to Embodiment 3.

[0026] Figure 11 is a side view of the optical module according to Embodiment 3.

[0027] Figure 12It is a schematic diagram of the optical module related to Embodiment 4.

[0028] Figure 13 It is a side view of the optical module related to Embodiment 4.

[0029] Figure 14 It is a side view of the optical module related to Embodiment 4.

[0030] Figure 15 It is a schematic diagram of the optical module related to Embodiment 5.

[0031] Figure 16 It is a side view of the optical module related to Embodiment 5.

[0032] Figure 17 It is a side view of the optical module related to Embodiment 5. Detailed implementation manners

[0033] Embodiment 1

[0034] Figure 1 It is a schematic diagram of the optical module 100 related to Embodiment 1. Additionally, Figure 2 and Figure 3 It is a side view of the optical module 100 related to Embodiment 1.

[0035] The socket 1 is in the shape of a substantially circular plate. The socket 1 is formed, for example, by applying an Au plating or the like on the surface of a material with high thermal conductivity such as copper (Cu). A plurality of pins 2a to 2f are provided in the socket 1 in a manner that penetrates the socket 1.

[0036] In order to fix the pins 2a to 2f in the socket 1, glass 3 is generally used. When there is impedance mismatch, the frequency response characteristics deteriorate due to multiple reflections of signals, making high-speed modulation difficult. Therefore, the glass 3 is made of a material with a low dielectric constant.

[0037] A temperature control module 10 is arranged on the surface 1a of the socket. Here, the surface 1a of the socket refers to the flat surface on the side where a part of the pins 2a to 2f protrudes in the circular plate-shaped socket 1. The temperature control module 10 is configured such that a plurality of thermoelectric elements made of, for example, bismuth telluride (BiTe) or the like are sandwiched between a lower substrate and an upper substrate made of a material such as aluminum nitride (AlN). The lower substrate of the temperature control module 10 has a protruding portion that protrudes in a direction parallel to the surface 1a of the socket, and electrode patterns 10a and 10b for supplying power to the thermoelectric elements (not shown) are provided on the protruding portion. The temperature control module 10 is provided to control the temperature of the semiconductor optical integrated element 50 described later. In addition, in the optical module 100 related to Embodiment 1, the temperature control module 10 can also be omitted.

[0038] A pedestal portion 20 is provided on the surface of the temperature control module 10. The bottom surface portion 20a of the pedestal portion faces the surface 1a of the socket via the temperature control module 10. The bottom surface portion 20a of the pedestal portion and the surface of the temperature control module 10 are joined by a joining member such as SnAgCu solder or AuSn solder.

[0039] The pedestal portion 20 has side surface portions 20b and 20c of the pedestal portion. The pedestal portion 20 is formed of a block of a metallic material obtained by applying an Au plating or the like on the surface of a material having a high thermal conductivity such as Cu, for example. The pedestal portion 20, which is a component different from the socket 1, may be mounted on the socket 1, or the socket 1 and the pedestal portion 20 may be integrally formed.

[0040] A sub-pedestal 30 is provided on the side surface portion 20b of the pedestal portion. The sub-pedestal 30 is, for example, a rectangular plate-like member made of a dielectric. The sub-pedestal 30 is made of a ceramic material such as AlN, for example, and has an electrical insulation function and a heat transfer function. The sub-pedestal 30 has a main surface and a back surface on opposite sides, and four side surfaces. The back surface of the sub-pedestal 30 is provided on the side surface portion 20b of the pedestal portion. A metal pattern is formed on the main surface of the sub-pedestal 30.

[0041] A semiconductor optical integrated element 50 is provided on the main surface side of the sub-pedestal 30. As Figure 4 shown in the cross-sectional view, the semiconductor optical integrated element 50 is composed of the following parts: a semiconductor laser section 50a, an optical modulator section 50b, and an optical amplifier section 50c. The respective parts are arranged such that the semiconductor laser section 50a, the optical modulator section 50b, and the optical amplifier section 50c are formed in this order from the side of the bottom surface portion 20a of the pedestal portion. The semiconductor laser section 50a, the optical modulator section 50b, and the optical amplifier section 50c are electrically independent of each other. In addition, the mounting direction of the semiconductor optical integrated element 50 is inclined with respect to the direction perpendicular to the surface 1a of the socket.

[0042] The semiconductor laser section 50a of the semiconductor optical integrated element 50 is composed of a distributed feedback semiconductor laser (DFB laser), for example. In addition, the optical modulator section 50b of the semiconductor optical integrated element 50 is composed of an electro-absorption type optical modulator using an InGaAsP-based quantum well absorption layer, for example. The optical amplifier section 50c of the semiconductor optical integrated element 50 is composed of an InGaAsP-based optical amplifier, for example.

[0043] Since the oscillation wavelength of the semiconductor optical integrated element 50 varies with temperature, it is necessary to keep the temperature of the semiconductor optical integrated element 50 as constant as possible. When the temperature of the semiconductor optical integrated element 50 rises, the temperature control module 10 cools it. On the other hand, when the temperature of the semiconductor optical integrated element 50 drops, the temperature control module 10 generates heat, thereby keeping the temperature of the semiconductor optical integrated element 50 constant.

[0044] The heat generated by driving the semiconductor optical integrated element 50 is transferred to the upper substrate of the temperature control module 10 via the sub-base 30. The temperature control module 10 absorbs the heat generated by the semiconductor optical integrated element 50. The heat absorbed by the temperature control module 10 is dissipated from the lower substrate of the temperature control module 10 to the heat sink (not shown) on the back side of the socket 1 via the socket 1.

[0045] In the semiconductor optical integrated element 50, along the side surface of the sub-base 30 perpendicular to the surface 1a of the socket on the side surface 20b of the pedestal portion, starting from the bottom surface 20a side of the pedestal portion, the capacitor 60 for the semiconductor laser section, the capacitor 61 for the optical modulator section, and the capacitor 62 for the optical amplifier section are arranged in sequence on the side surface 20b of the pedestal portion.

[0046] The thermistor 55 is provided on the side surface 20c of the pedestal portion opposite to the side surface 20b where the sub-base 30 is provided. The thermistor 55 is a type of temperature sensor and indirectly measures the temperature of the semiconductor optical integrated element 50. The temperature measured by the thermistor 55 is fed back to the temperature control module 10. Based on the temperature measured by the thermistor 55, the temperature control module 10 controls the temperature of the semiconductor optical integrated element 50, thereby enabling the temperature of the semiconductor optical integrated element 50 to be stabilized. As a result, a constant oscillation wavelength can be stably obtained.

[0047] The pin 2a is electrically connected to the thermistor 55 via the conductive lead W1. The pin 2b is electrically connected to the capacitor 60 for the semiconductor laser section via the conductive lead W2. The pin 2c is electrically connected to the capacitor 62 for the optical amplifier section via the conductive lead W3. The pin 2d is electrically connected to the electrode pattern 10a of the temperature control module 10 via the conductive lead W4. The pin 2e is electrically connected to the electrode pattern 10b of the temperature control module 10 via the conductive lead W5. The pin 2f is temporarily electrically connected to the electrode pattern 80a of the auxiliary substrate 80 fixed to the side surface of the auxiliary block 79 and is electrically connected to the optical modulator section 50b of the semiconductor optical integrated element 50 via the electrode pattern 30e above the sub-base 30. In addition, in Figure 2 and Figure 3 the configuration of the conductive leads and the electrode patterns is the same as that in Figure 1Similarly, for the sake of simplicity, the reference numerals of the conductive leads and the electrode patterns are not shown.

[0048] The capacitor 60 for the semiconductor laser section is temporarily electrically connected via the conductive lead W6 to the electrode pattern 30a on the sub-base 30, and further electrically connected via the conductive lead W7 to the semiconductor laser section 50a of the semiconductor optical integrated element 50.

[0049] The capacitor 61 for the optical modulator section is temporarily electrically connected via the conductive lead W8 to the electrode pattern 30b on the sub-base 30, and further electrically connected via the conductive lead W9 to the optical modulator section 50b of the semiconductor optical integrated element 50.

[0050] The capacitor 62 for the optical amplifier section is temporarily electrically connected via the conductive lead W10 to the electrode pattern 30c on the sub-base 30, and further electrically connected via the conductive lead W11 to the optical amplifier section 50c of the semiconductor optical integrated element 50.

[0051] The electrode pattern 80a of the auxiliary substrate 80 is electrically connected via the conductive lead W23 to the electrode pattern 30e on the sub-base 30. The electrode pattern 80b of the auxiliary substrate 80 is electrically connected via the conductive lead W21 to the electrode pattern 30d on the sub-base 30. The electrode pattern 80c of the auxiliary substrate 80 is electrically connected via the conductive lead W22 to the electrode pattern 30f on the sub-base 30.

[0052] The optical module 100 according to Embodiment 1 uses Figure 5 the CAN package 90 shown as the package. That is, components such as the temperature control module 10, the pedestal portion 20, the sub-base 30, the auxiliary block 79, and the auxiliary substrate 80 provided on the surface 1a side of the socket are housed inside the CAN housing 91. In addition, the pins 2 protrude to the back side of the socket 1.

[0053] In the optical module 100 according to Embodiment 1, due to the above-described structure, current control can be performed on each of the semiconductor laser section 50a, the optical modulator section 50b, and the optical amplifier section 50c via the capacitor 60 for the semiconductor laser section, the capacitor 61 for the optical modulator section, and the capacitor 62 for the optical amplifier section, respectively. Therefore, for the semiconductor optical integrated element 50, the controllability of the drive current is high. That is, the effect of improving the current controllability of the optical module 100 according to Embodiment 1 is achieved.

[0054] In addition, since the capacitors for the semiconductor laser unit, the optical modulator unit, and the optical amplifier unit are arranged in sequence on the side surface portion 20b of the pedestal portion along the side surface portion of the sub-pedestal 30 that is perpendicular to the surface 1a of the socket, starting from the bottom surface portion 20a side of the pedestal portion, an effect of miniaturizing the optical module can be achieved.

[0055] <Effect of Embodiment 1>

[0056] As described above, in the optical module according to Embodiment 1, since currents flow independently through the capacitors electrically connected to the semiconductor laser unit, the optical modulator unit, and the optical amplifier unit of the semiconductor optical integrated element to be mounted, the controllability of the current is high. Also, since the respective capacitors are arranged in sequence on the side surface portion of the pedestal portion, an effect of obtaining an optical module capable of miniaturization is achieved.

[0057] Embodiment 2

[0058] Figure 6 FIG. is a schematic diagram of the optical module 110 according to Embodiment 2. In addition, Figure 7 and Figure 8 FIG. is a side view of the optical module 110 according to Embodiment 2. Hereinafter, the points different from those of the optical module 100 according to Embodiment 1 will be described. In addition, in Figures 6 to 8 the arrangement of the conductive leads and the electrode patterns is the same as that in Embodiment 1. Therefore, for the sake of simplicity, the entry of reference numerals is omitted.

[0059] In the optical module 110 according to Embodiment 2, as shown in Figure 6 and Figure 8 the capacitor 61 for the optical modulator unit is arranged on the sub-pedestal 30. In addition, the capacitor 60 for the semiconductor laser unit and the capacitor 62 for the optical amplifier unit are respectively arranged on the surface of the upper substrate of the temperature control module 10.

[0060] By arranging the respective capacitors as described above, the width of the pedestal portion along the side surface portion 20b can be reduced compared to the structure of the optical module 100 according to Embodiment 1. That is, miniaturization of the CAN package 90 that houses the optical module 110, the socket 1, the temperature control module 10, the pedestal portion 20, the sub-pedestal 30, the auxiliary block 79, and the auxiliary substrate 80, etc. can be achieved.

[0061] In addition, the following structure may be adopted: the temperature control module 10 is set to have the same area as the bottom surface portion 20a of the pedestal portion, and the capacitor 60 for the semiconductor laser unit and the capacitor 62 for the optical amplifier unit are directly arranged on the surface 1a of the socket.

[0062] <Effect of Embodiment 2>

[0063] As described above, in the optical module according to Embodiment 2, since currents flow independently through the capacitors electrically connected to the semiconductor laser section, the optical modulator section, and the optical amplifier section of the semiconductor optical integrated device mounted thereon, the effect of high current controllability is achieved. Since the capacitor for the optical modulator section is disposed on the sub-base, and the capacitor for the semiconductor laser section and the capacitor for the optical amplifier section are respectively disposed on the temperature control module, the effect of obtaining an optical module capable of achieving miniaturization is also achieved.

[0064] Embodiment 3

[0065] Figure 9 is a schematic diagram of the optical module 120 according to Embodiment 3. Additionally, Figure 10 and Figure 11 are side views of the optical module 120 according to Embodiment 3. Hereinafter, differences from the optical module 100 according to Embodiment 1 will be described. In addition, in Figures 9 to 11 , since the configurations of the conductive leads and the electrode patterns are the same as those in Embodiment 1, the notations of reference numerals other than the parts required for explanation are omitted to avoid complexity.

[0066] In the optical module 120 according to Embodiment 3, as Figures 9 to 11 shown, the pedestal portion 20 has a rectangular parallelepiped shape. Additionally, a part of the electrode pattern 30a and the electrode pattern 30c on the sub-base 30 are respectively provided on the side surface portion of the sub-base 30.

[0067] In the optical module 120 according to Embodiment 3, as Figures 9 to 11 shown, the capacitor 61 for the optical modulator section is disposed on the sub-base 30. Additionally, the capacitor 60 for the semiconductor laser section and the capacitor 62 for the optical amplifier section are respectively disposed on the side surface portion 20d of the pedestal portion. The side surface portion 20d of the pedestal portion is one of the two side surface portions in a direction perpendicular to the mutually opposing side surface portions 20b and 20c of the pedestal portion and is the side surface portion close to the capacitor 61 for the optical modulator section.

[0068] That is, the capacitor 61 for the optical modulator section is disposed on the sub-base 30, and the capacitor 60 for the semiconductor laser section and the capacitor 62 for the optical amplifier section are disposed on the other side surface portion 20d of the pedestal portion extending along the side surface portion 20b where the sub-base 30 is provided.

[0069] The reason for separately disposing a part of the electrode pattern 30a and the electrode pattern 30c on the side surface portion of the sub-base 30 is that in order to connect the capacitor 60 for the semiconductor laser unit disposed on the side surface portion 20d of the pedestal portion and the electrode pattern 30a, and the capacitor 62 for the optical amplifier unit and the electrode pattern 30c through conductive leads, the above configuration is required. That is, because it is technically difficult to directly connect each capacitor disposed on the side surface portion 20d of the pedestal portion and the semiconductor optical integration element 50 disposed on the side surface portion 20b of the pedestal portion through conductive leads.

[0070] By disposing each capacitor as described above, the width of the pedestal portion along the side surface portion 20b can be reduced compared to the structure of the optical module 100 according to the first embodiment. That is, miniaturization of the CAN package 90 that houses the optical module 120, the socket 1, the temperature control module 10, the pedestal portion 20, the sub-base 30, the auxiliary block 79, and the auxiliary substrate 80 can be achieved.

[0071] In addition, instead of the structure in which a part of the electrode pattern 30a and the electrode pattern 30c above the sub-base 30 are separately disposed on the side surface portion of the sub-base 30, small conductive blocks can be respectively joined to the electrode pattern 30a and the electrode pattern 30c of the sub-base 30, and the semiconductor laser unit capacitor 60 and the optical amplifier unit capacitor 62 can be connected to the conductive blocks through conductive leads.

[0072] <Effect of the Third Embodiment>

[0073] As described above, according to the optical module according to the third embodiment, since currents flow independently through the capacitors respectively electrically connected to the semiconductor laser unit, the optical modulator unit, and the optical amplifier unit of the mounted semiconductor optical integration element, an effect of high current controllability is achieved. Since the capacitor for the optical modulator unit is disposed on the sub-base, and the capacitor for the semiconductor laser unit and the capacitor for the optical amplifier unit are respectively disposed on the other side surface portion of the pedestal portion, an effect of obtaining an optical module that can be miniaturized is also achieved.

[0074] Embodiment 4

[0075] Figure 12 is a schematic diagram of the optical module 130 according to the fourth embodiment. In addition, Figure 13 and Figure 14 are side views of the optical module 130 according to the fourth embodiment. Hereinafter, differences from the optical module 100 according to the first embodiment will be described. In addition, in Figures 12 to 14 since the configuration of the conductive leads and the electrode patterns is the same as that of the first embodiment, in order to avoid complexity, the entry of reference numerals is omitted.

[0076] In the optical module 130 according to Embodiment 4, as Figures 12 to 14 shown, the arrangement of each capacitor is the same as that of the optical module 100 according to Embodiment 1. The optical module 130 according to Embodiment 4 is characterized in that the cross-sectional shape of the other side surface 20d of the pedestal portion extending along the side surface 20b where the sub-pedestal 30 is provided is L-shaped.

[0077] By setting the cross-sectional shape of the side surface 20d of the pedestal portion to be L-shaped, the height of the pedestal portion 20 from the surface 1a of the socket can be reduced compared to the height of the pedestal portion of the optical module 100 according to Embodiment 1. As a result, miniaturization of the CAN package 90 that houses the socket 1, the temperature control module 10, the pedestal portion 20, the sub-pedestal 30, the auxiliary block 79, and the auxiliary substrate 80, etc., of the optical module 130 can be achieved.

[0078] <Effect of Embodiment 4>

[0079] As described above, according to the optical module according to Embodiment 4, since currents flow independently through the capacitors respectively electrically connected to the semiconductor laser section, the optical modulator section, and the optical amplifier section of the semiconductor optical integrated element to be mounted, an effect of high current controllability is achieved. Since the cross-sectional shape of the side surface of the pedestal portion is set to be L-shaped, an effect of obtaining an optical module that can be miniaturized is also achieved.

[0080] Embodiment 5

[0081] Figure 15 is a schematic diagram of the optical module 140 according to Embodiment 4. Additionally, Figure 16 and Figure 17 are side views of the optical module 140 according to Embodiment 4. Furthermore, in Figures 15 to 17 the arrangement of the conductive leads and the electrode patterns is the same as that in Embodiment 1, and thus, for the sake of avoiding complexity, the entry of reference numerals is omitted.

[0082] The optical module 140 according to Embodiment 5 is characterized in that, as Figure 15 and Figure 17 shown, there is no pedestal portion 20. Instead, the sub-pedestal 30 also serves as a pedestal portion. In addition, the arrangement of each capacitor is the same as that of the optical module 100 according to Embodiment 1.

[0083] In the optical module 140 according to Embodiment 5, since there is no need to provide a pedestal portion 20 as in Embodiments 1 to 4, the number of components of the optical module can be reduced. In addition, since the height of the sub-base 30 is lower than the height of the pedestal portion 20 in Embodiments 1 to 4, miniaturization of the CAN package 90 that houses the optical module 140, the temperature control module 10, the sub-base 30, the auxiliary block 79, the auxiliary substrate 80, etc. can be achieved.

[0084] <Effect of Embodiment 5>

[0085] As described above, according to the optical module according to Embodiment 5, since currents flow independently via capacitors electrically connected to the semiconductor laser section, the optical modulator section, and the optical amplifier section of the semiconductor optical integrated element mounted thereon, an effect of high current controllability is achieved. Since the pedestal portion can be omitted, the number of components of the optical module is reduced, and thus an effect of obtaining an optical module that can be miniaturized and cost-reduced is achieved.

[0086] Although various exemplary embodiments and examples are described in this disclosure, the various features, forms, and functions described in one or more embodiments are not limited to the application of a specific embodiment, and can also be applied alone or in various combinations to the embodiments.

[0087] Therefore, countless unillustrated variations can be conceived within the technical scope disclosed in this application specification. For example, it includes cases where at least one component is deformed, added, and also includes cases where at least one component is extracted and combined with components of other embodiments.

[0088] Explanation of Reference Numerals

[0089] 1...Base; 1a...Surface of the base; 2, 2a, 2b, 2c, 2d, 2e, 2f...Pins; 3...Glass; 10...Temperature control module; 10a, 10b, 30a, 30b, 30c, 30d, 30e, 30f, 80a, 80b, 80c...Electrode patterns; 20...Pedestal portion; 20a...Bottom surface portion of the pedestal portion; 20b, 20c, 20d...Side surface portions of the pedestal portion; 30...Sub-base; 50...Semiconductor optical integrated element; 50a...Semiconductor laser section; 50b...Optical modulator section; 50c...Optical amplifier section; 55...Thermistor; 60...Capacitor for semiconductor laser section; 61...Capacitor for optical modulator section; 62...Capacitor for optical amplifier section; 79...Auxiliary block; 80...Auxiliary substrate; 90...CAN package; 91...CAN housing; 100, 110, 120, 130, 140...Optical module; W1, W2, W3, W4, W5, W6, W7, W8, W9, W10, W11, W21, W22, W23...Conductive leads.

Claims

1. An optical module, characterized in that it includes: a header; a pedestal portion disposed on the surface side of the header, and having a bottom surface portion facing the surface of the header and side surface portions extending in a direction perpendicular to the surface of the header; a sub-base provided on the side surface portion of the pedestal portion; a semiconductor optical integrated element disposed on the sub-base, and composed of a semiconductor laser section, an optical modulator section, and an optical amplifier section which are electrically independent of each other starting from the surface side of the header; a capacitor for the semiconductor laser section connected to the semiconductor laser section of the semiconductor optical integrated element; a capacitor for the optical modulator section connected to the optical modulator section of the semiconductor optical integrated element; and a capacitor for the optical amplifier section connected to the optical amplifier section of the semiconductor optical integrated element.

2. An optical module, characterized in that it includes: a header; a sub-base disposed on the surface side of the header, and having a bottom surface portion facing the surface of the header and side surface portions extending in a direction perpendicular to the surface of the header; a semiconductor optical integrated element disposed on the sub-base, and composed of a semiconductor laser section, an optical modulator section, and an optical amplifier section which are electrically independent of each other starting from the surface side of the header; a capacitor for the semiconductor laser section electrically connected to the semiconductor laser section of the semiconductor optical integrated element; a capacitor for the optical modulator section electrically connected to the optical modulator section of the semiconductor optical integrated element; and a capacitor for the optical amplifier section electrically connected to the optical amplifier section of the semiconductor optical integrated element.

3. The optical module according to claim 1, characterized in that a temperature control module is provided between the header and the pedestal portion.

4. The optical module according to claim 2, characterized in that a temperature control module is provided between the header and the sub-base.

5. The optical module according to claim 1 or 3, characterized in that the sub-base is composed of a plate-like member, and along the side surface portion of the sub-base perpendicular to the surface of the header disposed on the side surface portion of the pedestal portion, starting from the bottom surface portion side of the pedestal portion, the capacitor for the semiconductor laser section, the capacitor for the optical modulator section, and the capacitor for the optical amplifier section are sequentially arranged on the side surface portion of the pedestal portion.

6. The optical module according to claim 1 or 3, characterized in that the sub-base is in a cuboid shape, the capacitor for the optical modulator section is disposed on the sub-base, and the capacitor for the semiconductor laser section and the capacitor for the optical amplifier section are provided on the temperature control module.

7. The optical module according to claim 1 or 3, characterized in that the sub-base is in a cuboid shape, the capacitor for the optical modulator section is disposed on the sub-base, and the capacitor for the semiconductor laser section and the capacitor for the optical amplifier section are provided on the other side surface portion of the pedestal portion extending along the side surface portion where the sub-base is provided.

8. The optical module according to claim 1 or 3, characterized in that The cross-sectional shape of the other side surface of the pedestal portion that extends along the side surface where the sub-base is provided is L-shaped.

9. The optical module according to any one of claims 1 to 8, characterized in that the semiconductor optical integrated element is disposed obliquely with respect to the direction perpendicular to the surface of the header.

10. The optical module according to any one of claims 1 to 9, characterized in that the semiconductor optical integrated element is housed in a CAN package.

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