Quartz tubule punching method and device

Abstract

The invention provides a quartz tubule punching method and device.The quartz tubule punching method comprises the steps that gas is continuously introduced into a quartz tubule to be punched through a gas supply device so that dust in the quartz tubule can be continuously emptied; according to the position and the size of the to-be-punched area, the punching starting point and the machining radius of the laser equipment are set; wherein the starting point is located in the area to be punched; the laser equipment starts to punch from the starting point and gradually moves towards the edge of the to-be-punched area in the circumferential direction until the laser equipment reaches the position of the machining radius, and the machining radius is kept to cut a circle again; and the laser equipment retreats, and punching of the current hole site is completed. The problems that impurity particles are generated after punching, secondary overlapping of high temperature is caused when punching is started and finished, and the shape of a hole is changed are solved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular, to a method and device for punching small quartz tubes. Background Art

[0002] The small quartz tube for punching is a very important component in the semiconductor silicon wafer coating process. This component introduces the reaction gas from the outside into the reaction chamber. During the introduction process, not only no impurity particles should be generated to avoid contaminating the reaction chamber, but also the shape and aperture of the holes on the small tube need to maintain high consistency to achieve the uniformity of gas supply and make the coating layer thickness uniform. The current process generally uses laser punching. The principle of laser cutting is to irradiate the surface of the workpiece with a laser beam with a high power density. The material is melted or vaporized by the heat energy of the laser beam to achieve cutting. However, since the quartz still exists in the internal cavity air of the small tube after high-temperature vaporization and cannot dissipate, it is easy to adhere to the inner wall of the processed hole after cooling. These silicon dioxide deposits will randomly fall off during the subsequent coating process and become impurity particles, reducing the yield of the silicon wafer. Moreover, at the connection position of the start and end of laser punching, due to the secondary overlap of high temperature, the shape of the hole changes and the gas supply uniformity is poor. Summary of the Invention

[0003] The problems solved by the present invention are that impurity particles will be generated after punching, and the high temperature secondary overlap caused at the start of punching changes the shape of the hole.

[0004] To solve the above problems, the present invention provides a method for punching small quartz tubes, which includes: continuously supplying gas to the inside of the small quartz tube to be punched through a gas supply device to continuously evacuate the dust in the small quartz tube; setting the starting point and processing radius of the laser device for punching according to the position and size of the area to be punched, wherein the starting point is located inside the area to be punched; the laser device starts punching from the starting point and gradually moves along the circumferential direction towards the edge of the area to be punched until the laser device reaches the position of the processing radius, and then cuts one more circle while maintaining the processing radius; the laser device withdraws to complete the punching of the current hole position.

[0005] Technical effects achieved after adopting this technical solution: The air supply device continuously supplies air to the inside of the quartz small tube to be drilled, which can blow away the impurities inside the quartz small tube before drilling, and can also blow away the silicon dioxide dust generated by the laser high-temperature gasification of quartz in a timely manner during drilling, thus avoiding various dusts from adhering to the inside of the quartz small tube, resulting in uneven air flow or contaminating the wafers in the wafer process chamber when falling off. Therefore, the cleanliness of the quartz small tube itself and the cleanliness of the applied wafer process chamber are improved. The starting point of the laser device is located inside the area to be drilled, which can prevent the high temperature at the start of drilling from concentrating on the edge of the area to be drilled. The laser device stays at the edge of the area to be drilled for a shorter time, avoiding changes in the hole diameter caused by excessive temperature. At the same time, the end point of the laser device does not coincide with the starting point, avoiding excessive energy caused by the secondary superposition of laser energy at the coincidence position. Therefore, the roundness of the hole is improved, ensuring the roundness and diameter consistency of the holes during multiple drillings, and making the air supply to the wafer by the quartz small tube more uniform.

[0006] Further, the air supply device continuously supplies air to the inside of the quartz small tube to be drilled, specifically including: The air supply device is connected to the quartz small tube through a pipeline and a joint, and an inert gas is introduced into the inside of the quartz small tube.

[0007] Technical effects achieved after adopting this technical solution: The pipeline can be bent to achieve a flexible connection between the air supply device and the quartz small tube, avoiding the vibration during the drilling of the quartz small tube from affecting the connection effect or damaging the interface of the air supply device; the joint facilitates the connection between the pipeline and quartz small tubes of different sizes, improving the flexibility of pipeline connection, and thus facilitating the air supply to quartz small tubes of different sizes; introducing an inert gas into the inside of the quartz small tube can effectively blow away silicon dioxide dust impurities and will not react.

[0008] Further, a valve is installed on the air supply device or the pipeline to adjust the gas flow according to the specifications of the quartz small tube.

[0009] Technical effects achieved after adopting this technical solution: When the diameter of the quartz small tube is larger, increasing the flow rate can remove impurities more completely; when the diameter of the quartz small tube is smaller, inert gas can be saved, the power of the air supply device can be reduced to save energy, and the noise can be reduced; therefore, the flow rate adjustment is more flexible.

[0010] Further, according to the position and size of the area to be drilled, the starting point and processing radius of the laser device for drilling are set, specifically including: According to the radius R of the area to be drilled, the processing radius r is set. The processing path circle is determined by the center of the area to be drilled and the processing radius r, and the starting point is located inside the processing path circle; where R = r + s; s is the tool compensation amount.

[0011] Technical effects achieved after adopting this technical solution: Considering the length of the tool as the compensation for the radius, the area to be drilled with radius R can be machined more precisely, so the machining radius r is more accurate.

[0012] Furthermore, gradually move along the circumferential direction towards the edge of the area to be drilled until the laser device reaches the position of the machining radius, and then keep the machining radius and cut one more circle. Specifically, it includes: setting a tangent point on the machining path circle; the laser device moves from the starting point along the first curved path towards the tangent point, and the first curved path is tangent to the machining path circle at the tangent point; the laser device cuts one circle along the machining path circle from the tangent point.

[0013] Technical effects achieved after adopting this technical solution: Moving from the starting point to the tangent point along the first curved path and then entering the machining path circle can achieve a smooth transition. The laser device stays at the tangent point for a short time and will not cause energy concentration. Furthermore, the first curved path is an elliptical path, the length of the major axis of the elliptical path is from 1.1r to 1.3r, and the length of the minor axis of the elliptical path is r.

[0014] Technical effects achieved after adopting this technical solution: This elliptical path can prevent the position of the starting point from being too close to the machining path circle, which may affect the energy at the edge of the machining path circle, and at the same time, the position of the starting point is not too far from the machining path circle, avoiding wasting energy due to too long a first curved path.

[0015] Furthermore, the laser device withdraws to complete the drilling of the current hole position. Specifically, it includes: setting an end point for the laser device to drill; wherein, the end point is located inside the area to be drilled; the laser device moves from the tangent point along the second curved path towards the end point.

[0016] Technical effects achieved after adopting this technical solution: The end point of the laser device is located inside the area to be drilled, which can prevent the high temperature during the end of drilling from concentrating on the edge of the area to be drilled. The laser device stays at the edge of the area to be drilled for a shorter time, avoiding changes in the hole diameter due to excessive temperature. Avoiding energy concentration during withdrawal further optimizes the quality of the hole edge, improves the roundness of the hole and the consistency of the hole diameter, and makes the air supply in the quartz small tube more uniform.

[0017] Furthermore, the method for drilling the quartz small tube further includes: after the laser device withdraws, it moves to the starting point of the next area to be drilled, and continues to supply gas continuously to the inside of the quartz small tube to be drilled through the gas supply device.

[0018] Technical effects achieved after adopting this technical solution: By determining the starting point of the next hole position, the positions of all hole positions can be evenly arranged, improving the uniformity of gas supply through the quartz capillary tube; moreover, the next hole position can also avoid the superposition of the high temperature of the laser device at the edge of the area to be drilled, resulting in hole position deformation.

[0019] To solve the above problems, the present invention provides a quartz capillary tube drilling device for implementing the quartz capillary tube drilling method provided by any of the above technical solutions. The quartz capillary tube drilling device includes: a gas supply device and a laser device; the gas supply device is used for continuously supplying gas inside the quartz capillary tube to be drilled; the laser device is used for drilling.

[0020] Technical effects achieved after adopting this technical solution: The gas supply device continuously supplies gas inside the quartz capillary tube to be drilled, which can blow away the silicon dioxide dust and other impurities generated by the laser gasifying quartz before and during drilling. Inside the quartz capillary tube, the air flow is affected unevenly, or the wafer in the wafer process chamber is contaminated when the impurities fall off. Therefore, the cleanliness of the quartz capillary tube itself and the cleanliness of the applied wafer process chamber are improved.

[0021] Further, the quartz capillary tube drilling device further includes: a pipeline, a connector, and a valve. The gas supply device is connected to the quartz capillary tube through the pipeline and the connector, and the valve is installed on the gas supply device or the pipeline.

[0022] Technical effects achieved after adopting this technical solution: The pipeline is used to achieve a flexible connection between the gas supply device and the quartz capillary tube, avoiding the vibration of the quartz capillary tube from affecting the pipeline and the gas supply device; the connector facilitates the flexible connection of the pipeline to quartz capillary tubes of different sizes, and the valve is used to adjust the gas flow rate of the pipeline to adapt to quartz capillary tubes of different inner diameters.

[0023] In summary, each of the above technical solutions of the present application may have one or more of the following advantages or beneficial effects: i) The air supply device continuously supplies air to the inside of the quartz small tube to be punched, which can blow away the impurities in the quartz small tube before punching, and can also blow away the silicon dioxide dust generated by the laser high-temperature gasification of quartz during punching, thereby avoiding the contamination of the wafers in the wafer process chamber caused by the attachment of various dusts, and thus improving the cleanliness of the wafer process chamber; ii) The starting point and the ending point of the laser device are located inside the area to be punched, so that the high temperature at the start of punching and when exiting will not concentrate on the edge of the area to be punched. The laser device stays at the edge of the area to be punched for a shorter time, avoiding the change of the hole diameter caused by too high temperature. At the same time, the ending point of the laser device does not coincide with the starting point, avoiding the secondary superposition of laser energy at the coincidence position and resulting in too high energy. Therefore, the roundness of the hole is improved, and the roundness and the diameter consistency of the hole during multiple punchings are ensured, making the air supply of the quartz small tube to the wafer more uniform; iii) When the diameter of the quartz small tube is larger, increasing the flow rate can more completely remove impurities; when the diameter of the quartz small tube is smaller, inert gas can be saved, the power of the air supply device can be reduced to save energy, and the noise can be reduced; therefore, the flow rate adjustment is more flexible. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 is a flowchart of a method for punching a quartz small tube provided by the present invention; Figure 2 is a schematic structural diagram of a device for punching a quartz small tube provided by the present invention; Figure 3 is Figure 2 a specific structural diagram of the laser device and the quartz small tube in Figure 4 is Figure 3 a cross-sectional view taken along the A-A direction in Figure 5 is a movement path diagram of the laser device.

[0025] Description of the reference numerals: 100 - Device for punching a quartz small tube; 110 - Air supply device; 120 - Laser device; 130 - Pipeline; 140 - Connector; 150 - Valve; 200 - Quartz small tube. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0026] The object of the present invention is to provide a method and a device for punching a quartz small tube, which are used to avoid the excessive energy caused by the concentration of laser energy, and thus improve the roundness of the holes in the quartz small tube and achieve the effect of uniform air supply.

[0027] To make the above objects, features, and advantages of the present invention more obvious and understandable, the following detailed description of the specific embodiments of the present invention will be given with reference to the accompanying drawings.

[0028] SeeFigures 1 - 5 , the present invention provides a method for drilling a small quartz tube 200, and the method for drilling the small quartz tube 200 includes: Continuously ventilate the inside of the small quartz tube 200 to be drilled through the air supply device 110 to continuously evacuate the dust inside the small quartz tube 200; Set the starting point and processing radius of the laser device 120 for drilling according to the position and size of the area to be drilled; wherein, the starting point is located inside the area to be drilled; The laser device 120 starts drilling from the starting point and gradually moves along the circumferential direction towards the edge of the area to be drilled. When the laser device 120 reaches the position of the processing radius, keep the processing radius and cut one more circle; The laser device 120 withdraws to complete the drilling of the current hole position.

[0029] In this embodiment, the air supply device 110 continuously ventilates the inside of the small quartz tube 200 to be drilled, which can blow away the impurities inside the small quartz tube 200 before drilling, and can also blow away the silicon dioxide dust generated by laser high-temperature gasification of quartz in time during drilling, thereby avoiding various dusts from adhering to the inside of the small quartz tube 200, resulting in uneven air flow or contaminating the wafers in the wafer process chamber when falling off. Therefore, the cleanliness of the small quartz tube 200 itself and the cleanliness of the applied wafer process chamber are improved. The starting point of the laser device 120 is located inside the area to be drilled, so that the high temperature at the start of drilling will not be concentrated at the edge of the area to be drilled. The laser device 120 stays at the edge of the area to be drilled for a shorter time, avoiding aperture changes caused by excessive temperature. At the same time, the end point of the laser device 120 does not coincide with the starting point, avoiding the secondary superposition of laser energy at the coincidence position and resulting in excessive energy. Therefore, the roundness of the hole is improved, and the roundness and aperture consistency of the holes are ensured during multiple drillings, making the air supply of the small quartz tube 200 to the wafers more uniform.

[0030] Preferably, the gas introduced is, for example, nitrogen, and no limitation is made here.

[0031] In a specific embodiment, continuously ventilating the inside of the small quartz tube 200 to be drilled through the air supply device 110 specifically includes: the air supply device 110 is connected to the small quartz tube 200 through a pipeline 130 and a joint 140, and an inert gas is introduced into the inside of the small quartz tube 200.

[0032] It should be noted that the pipeline 130 can be bent to achieve a flexible connection between the gas supply device 110 and the quartz capillary 200, avoiding the vibration during the drilling of the quartz capillary 200 from affecting the connection effect or damaging the interface of the gas supply device 110; the joint 140 facilitates the connection between the pipeline 130 and quartz capillaries 200 of different sizes, improving the flexibility of the pipeline 130 connection, thereby facilitating the supply of gas to quartz capillaries 200 of different sizes; introducing an inert gas into the quartz capillary 200 can effectively blow away silica dust impurities and no reaction will occur.

[0033] In a specific embodiment, a valve 150 is installed on the gas supply device 110 or the pipeline 130 to adjust the gas flow according to the specifications of the quartz capillary 200.

[0034] It should be noted that when the diameter of the quartz capillary 200 is larger, increasing the flow rate can more completely remove impurities; when the diameter of the quartz capillary 200 is smaller, inert gas can be saved, the power of the gas supply device 110 can be reduced to save energy, and the noise can be reduced; therefore, the flow rate adjustment is more flexible.

[0035] Preferably, the valve 150 can be a manual valve or a solenoid valve.

[0036] In a specific embodiment, according to the position and size of the area to be drilled, the starting point and the processing radius of the laser device 120 for drilling are set, specifically including: according to the radius R of the area to be drilled, the processing radius r is set, and the processing path circle is determined by the center of the area to be drilled and the processing radius r, and the starting point is located inside the processing path circle; where R = r + s; s is the tool compensation amount.

[0037] It should be noted that considering the length of the tool as the compensation for the radius can more accurately machine the area to be drilled with a radius R, so the processing radius r is more accurate.

[0038] In a specific embodiment, it moves gradually along the circumferential direction towards the edge of the area to be drilled until the laser device 120 reaches the position of the processing radius, and then cuts one more circle while maintaining the processing radius, specifically including: setting a tangent point on the processing path circle; the laser device 120 moves from the starting point along the first curved path towards the tangent point, and the first curved path is tangent to the processing path circle at the tangent point; the laser device 120 cuts one circle along the processing path circle from the tangent point.

[0039] It should be noted that moving from the starting point to the tangent point along the first curved path and then entering the processing path circle can achieve a smooth transition, and the laser device 120 stays at the tangent point for a short time and no energy concentration will occur. In a specific embodiment, the first curved path is an elliptical path, the length of the major axis of the elliptical path is 1.1r to 1.3r, and the length of the minor axis of the elliptical path is r. For example, the length of the major axis of the elliptical path is 1.2r, which is not limited herein.

[0040] It should be noted that for this elliptical path, the position of the starting point will not be too close to the machining path circle, so that the energy at the starting point will not affect the edge of the machining path circle. At the same time, the position of the starting point will not be too far from the machining path circle, avoiding wasting energy due to the too long first curved path.

[0041] In a specific embodiment, the laser device 120 withdraws to complete the drilling of the current hole position, which specifically includes: setting the end point of the drilling of the laser device 120; wherein, the end point is located inside the area to be drilled; the laser device 120 moves from the tangent point along the second curved path to the end point.

[0042] It should be noted that the end point of the laser device 120 is located inside the area to be drilled, so that the high temperature during the stop at the end of drilling will not be concentrated on the edge of the area to be drilled. The laser device 120 stays at the edge of the area to be drilled for a shorter time, avoiding the change of the hole diameter due to too high temperature. Avoiding the concentration of energy during withdrawal further optimizes the quality of the hole edge, improves the roundness of the hole and the consistency of the hole diameter, and makes the air supply of the quartz small tube 200 more uniform.

[0043] In a specific embodiment, as Figure 5 shown, it is the movement path diagram of the laser device. The laser device moves above the quartz small tube in the order of Figure 5 points 1, 2, 3, 4, 5, 6, 7, 8, 9 in the figure. Among them, point 1 is the starting point; point 2 coincides with point 8 and is the tangent point; point 9 is the end point; the path from point 1 to point 2 is the first curved path; the path from point 8 to point 9 is the second curved path.

[0044] In a specific embodiment, the method for drilling the quartz small tube 200 further includes: after the laser device 120 withdraws, it moves to the starting point of the next area to be drilled, and continues to supply air continuously to the inside of the quartz small tube 200 to be drilled through the air supply device 110.

[0045] It should be noted that determining the starting point of the next hole position can evenly arrange the positions of all hole positions, improve the uniformity of air supply of the quartz small tube 200; and the next hole position can also avoid the superposition of the high temperature of the laser device 120 at the edge of the area to be drilled, resulting in hole position deformation.

[0046] To solve the above problems, the present invention provides a quartz capillary tube drilling device 100 for implementing the quartz capillary tube 200 drilling method provided by any of the above technical solutions. The quartz capillary tube drilling device 100 includes: a gas supply device 110 and a laser device 120; the gas supply device 110 is used to continuously supply gas to the inside of the quartz capillary tube 200 to be drilled; the laser device 120 is used for drilling.

[0047] It should be noted that the gas supply device 110 continuously supplies gas to the inside of the quartz capillary tube 200 to be drilled, which can blow away the silicon dioxide dust and other impurities generated by the laser high-temperature gasification of quartz before and during drilling. If there is no gas supply, the airflow inside the quartz capillary tube 200 will be affected unevenly, or the wafer in the wafer process chamber will be contaminated when the impurities fall off. Therefore, the cleanliness of the quartz capillary tube 200 itself and the cleanliness of the applied wafer process chamber are improved.

[0048] In a specific embodiment, the quartz capillary tube drilling device 100 further includes: a pipeline 130, a connector 140, and a valve 150. The gas supply device 110 is connected to the quartz capillary tube 200 through the pipeline 130 and the connector 140, and the valve 150 is installed on the gas supply device 110 or the pipeline 130.

[0049] It should be noted that the pipeline 130 is used to achieve the flexible connection between the gas supply device 110 and the quartz capillary tube 200, avoiding the vibration of the quartz capillary tube 200 from affecting the pipeline 130 and the gas supply device 110; the connector 140 facilitates the flexible connection of the pipeline 130 to quartz capillary tubes 200 of different sizes, and the valve 150 is used to adjust the gas flow rate of the pipeline 130 to adapt to quartz capillary tubes 200 with different inner diameters.

[0050] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be determined by the scope defined by the claims.

Claims

1. A method for punching holes in a small quartz tube, characterized in that, The method for drilling holes in the quartz small tube includes: Continuously ventilate the inside of the quartz small tube to be drilled through a gas supply device to continuously evacuate the dust in the quartz small tube; Set the starting point and machining radius of the laser equipment for drilling according to the position and size of the area to be drilled; wherein, the starting point is located inside the area to be drilled; The laser equipment starts drilling from the starting point and gradually moves along the circumferential direction towards the edge of the area to be drilled. When the laser equipment reaches the position of the machining radius, maintain the machining radius and cut one more circle; The laser equipment withdraws to complete the drilling of the current hole position.

2. The method for punching holes in a small quartz tube according to claim 1, wherein Continuously ventilating the inside of the quartz small tube to be drilled through a gas supply device specifically includes: The gas supply device is connected to the quartz small tube through a pipeline and a connector, and an inert gas is introduced into the inside of the quartz small tube.

3. The method for punching holes in a small quartz tube according to claim 2, wherein, A valve is installed on the gas supply device or the pipeline to adjust the gas flow according to the specifications of the quartz small tube.

4. The method for punching holes in a small quartz tube according to claim 1, wherein Setting the starting point and machining radius of the laser equipment for drilling according to the position and size of the area to be drilled specifically includes: Set the machining radius r according to the radius R of the area to be drilled. Determine the machining path circle with the center of the area to be drilled and the machining radius r. The starting point is located inside the machining path circle; Where R = r + s; s is the tool compensation amount.

5. The method for punching holes in a small quartz tube according to claim 4, characterized in that, Gradually move along the circumferential direction towards the edge of the area to be drilled. When the laser equipment reaches the position of the machining radius, maintain the machining radius and cut one more circle specifically includes: Set a tangent point on the machining path circle; The laser equipment moves from the starting point along the first curved path towards the tangent point. The first curved path is tangent to the machining path circle at the tangent point; The laser equipment cuts one circle along the machining path circle from the tangent point.

6. The method for punching holes in a small quartz tube according to claim 5, characterized in that, The first curved path is an elliptical path. The length of the major axis of the elliptical path is 1.1r to 1.3r, and the length of the minor axis of the elliptical path is r.

7. The method for punching holes in a small quartz tube according to claim 5, characterized in that, The laser equipment withdraws to complete the drilling of the current hole position specifically includes: Set the end point of the laser equipment for drilling; wherein, the end point is located inside the area to be drilled; The laser equipment moves from the tangent point along the second curved path towards the end point.

8. The method for punching holes in a small quartz tube according to claim 1, characterized in that, The method for drilling holes in the quartz small tube further includes: After the laser equipment withdraws, move to the starting point of the next area to be drilled, and continue to continuously ventilate the inside of the quartz small tube to be drilled through the gas supply device.

9. A quartz capillary tube punching device for implementing the quartz capillary tube punching method according to any one of claims 1-8, characterized in that, The quartz small tube drilling device includes: a gas supply device and a laser equipment; The gas supply device is used to continuously ventilate the inside of the quartz small tube to be drilled; The laser equipment is used for drilling.

10. The quartz small tube punching device according to claim 9, characterized in that, The quartz small tube drilling device further includes: a pipeline, a connector and a valve. The gas supply device is connected to the quartz small tube through the pipeline and the connector, and the valve is installed on the gas supply device or the pipeline.

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