An adjustable electrolysis device, electroplating system and electroplating method

Abstract

The present application relates to a kind of adjustable electrolytic device, electroplating system and electroplating method, the adjustable electrolytic device includes electroplating mould, the electroplating mould includes outer cylinder and the inner cylinder being arranged in the outer cylinder;The outer cylinder is provided with outer outlet and inner entrance being communicated with the outer outlet by passage.This application establishes the inner cylinder and the outer cylinder configuration of electroplating mould, not only can quickly realize the uniformity of obtaining semiconductor electronic component local plating film thickness and the precision of plating area, meet the precision requirement of high-end semiconductor lead frame in metal plating process, to the best condition screening of selective adjustable electroplating mould.And the present application also provides the electroplating mould combination of disposable adjustable electrolytic device as updating, and by the adjustable function of electroplating mould inner cylinder through opening width, realize the fast, accurate electroplating method to various semiconductor electronic component local plating area.

Description

TECHNICAL FIELD

[0001] The present application relates to an adjustable electrolysis device, an electroplating system and an electroplating method, and belongs to the technical field of local electroplating of semiconductor electronic components. BACKGROUND

[0002] Electrolytic metal plating processing is a special processing technology for forming metal plating products with nanometer or micrometer scale in an electrolytic cell according to the principle of electrochemical cathode deposition. Electroplating processing can be used to manufacture precise high-end local electrolytic metal plating materials of semiconductor electronic components. In the field of aerospace, the flight control system, navigation system, communication system and radar system all require high-precision high-performance signal transmission of high-end products of semiconductor electronic components. At present, the manufacturing level of local electrolytic metal plating of high-performance semiconductor electronic components is still quite different from the international level. Among them, the electrolytic metal plating processing and manufacturing technology of lead frame for chip packaging in semiconductor electronic components is an extremely important link in the chip packaging production and manufacturing industry chain of high-performance semiconductor electronic components.

[0003] High-end precise electrolytic metal plating products of high-performance semiconductor electronic components need to have reliable and excellent electronic information transmission performance, therefore, it is necessary to develop high-speed stable electrolytic metal plating production and manufacturing technology for local plating of various semiconductor electronic components, and the required metal plating formed thereby must have high density, high uniformity and excellent corrosion resistance. The high-performance requirements of the metal plating of the local plating area of semiconductor electronic components are the basic conditions for maintaining the normal operation of semiconductor electronic products. If the uniformity and density of the metal plating are not high, it will cause distortion of the signal transmission of semiconductor electronic components, especially the lack of uniformity and low density of the metal plating, which will cause the corrosion resistance to decrease, directly leading to the scrap of high-end semiconductor electronic products.

[0004] However, the existing electroplating technology for the production and processing of local plating areas of various semiconductor electronic components is difficult to obtain qualified products with high density, high uniformity and excellent corrosion resistance at one time by using the electroplating mold made to adjust the metal plating of the local plating area. Therefore, the current technical level can only correct the possible electroplating mold structure parameters affecting the performance of the metal plating according to the first set of electroplating mold adjustment results, and repeatedly adjust the performance requirements of the products. If the original electroplating mold cannot meet the requirements during the adjustment process, a second set of electroplating mold must be made for a new round of adjustment. The adjustment process is repeated until the adjustment result meets the requirements of high density, high uniformity and excellent corrosion resistance of the metal plating.

[0005] Therefore, it is known that the technical level of the electroplating die of the local plating area of the semiconductor electronic component needs to correct the original electroplating die or re-make more than two sets of electroplating dies, resulting in a long debugging time and low efficiency; moreover, the size of the electroplating solution outlet of the die is fixed and cannot be changed, so the pressure of the electroplating solution chamber cannot be accurately controlled, and at present, only semi-quantitative adjustment can be made through the valve of the solution pipeline; more importantly, the instability of the current metal plating layer processing and manufacturing technology of the local plating area of the semiconductor electronic component directly leads to the requirement of high density, high uniformity and excellent corrosion resistance of the metal plating layer product, which cannot be continuously and stably realized. Therefore, it is an important and urgent problem to explore and create a selective adjustable electrolytic device and electroplating system capable of precisely electroplating various high-end semiconductor electronic components in a certain range of selective adjustable electroplating die jet outlet size. SUMMARY

[0006] To solve the above problems, the present application provides an adjustable electrolytic device, electroplating system and electroplating method to meet the requirement of the precision of the selective adjustable electroplating die in the metal plating layer electroplating process of the high-end semiconductor lead frame.

[0007] To achieve the above purpose, the technical scheme adopted by the present application is as follows:

[0008] In the first aspect, the present application provides an adjustable electrolytic device, which comprises an electroplating die, the electroplating die comprising an outer cylinder and an inner cylinder arranged in the outer cylinder; the outer cylinder is provided with an outer outlet and an inner inlet communicated with the outer outlet through a channel;

[0009] The area of the outer outlet of the outer cylinder S 外出口 is:

[0010] S 外出口 = L 外 × D 外 Formula 1

[0011] Wherein, L 外 the long side length of the outer outlet of the outer cylinder, D 外 the short side length of the outer outlet of the outer cylinder;

[0012] The area of the inner inlet of the outer cylinder S 内入口 is greater than the area of the outer outlet S 外出口 , the area of the inner inlet of the outer cylinder S内入口 For:

[0013] S 内入口 = L 内 × D 内 Formula 2

[0014] wherein, L 内 is the long side length of the inner entrance of the outer cylinder, D 内 is the short side length of the inner entrance of the outer cylinder;

[0015] The number of passages connecting the outer outlet and the inner entrance of the outer cylinder is calculated according to the pitch of the semiconductor electronic product as follows:

[0016] M = 2 πr / 3 P Formula 3

[0017] wherein, M is the number of passages, r is the outer surface radius of the outer cylinder, P is the pitch of the semiconductor electronic product;

[0018] The inner cylinder is provided with a plating solution jetting outlet, and the inner cylinder can be rotated to dislocate the plating solution jetting outlet of the inner cylinder from the inner entrance of the outer cylinder, so as to adjust the size of the inner entrance of the outer cylinder and adjust the flow rate of the plating solution passing through;

[0019] The width of the plating solution jetting outlet of the inner cylinder and the width of the inner entrance of the outer cylinder D 内 are less than the distance between two outlets W :

[0020] D 内 W Formula 4

[0021] The area of the outer outlet of the outer cylinder S 外出口 satisfies the following formula:

[0022] S 外出口 ≤ S 实测 ≤ S 外出口 + 0.5mm 2 Formula 5

[0023] wherein, S ​​​​​实测 The obtained local plating area metal plating layer specification surface area is used for actual electroplating operation of the local plating area of the semiconductor electronic element.

[0024] In an embodiment of the present application, the outer outlet size of the outer cylinder is matched with the size of the local plating area of the semiconductor electronic element.

[0025] In an embodiment of the present application, the outer outlets of the plurality of outer cylinders are arranged on the outer periphery of the outer cylinder, the inner entrances of the plurality of outer cylinders are arranged on the inner periphery of the outer cylinder, the outer outlets and the inner entrances of the outer cylinder correspond to each other and are communicated through the passages.

[0026] In an embodiment of the present application, the metal material of the outer cylinder includes titanium, titanium plated with platinum, stainless steel 316, and stainless steel 304.

[0027] In an embodiment of the present application, when the material of the outer cylinder is selected as titanium plated with platinum, only the inside of the passage of the electroplating mold outer cylinder is plated.

[0028] In an embodiment of the present application, the metal species of the electroplating solution includes:

[0029] Monomer plating layer Au, Ag, Ni, Sn, Cu, Pd, Rh, and Pt;

[0030] Binary alloy metal of alloy plating layer Au-Ni, Pd-Ni, Ni-P, and W-Ni.

[0031] In a second aspect, the present application provides an electroplating system using the adjustable electrolytic device, the electroplating system comprising: an electrolytic device control system and an electroplating condition monitoring system.

[0032] The electrolytic device control system comprises:

[0033] The local plating area of the semiconductor electronic element is used to provide a standard for the electroplating solution outlet design scheme of the electroplating mold outer cylinder of the adjustable electrolytic device.

[0034] The external electroplating mold passage control module comprises an electroplating mold, the electroplating mold comprising an outer cylinder, the outer cylinder being provided with an electroplating solution outer outlet, a passage communicated with the electroplating solution outer outlet, and an electroplating solution inner entrance.

[0035] The internal electroplating mold adjustment control module comprises an electroplating mold, the electroplating mold comprising an inner cylinder, the inner cylinder being provided with an electroplating solution injection outlet corresponding to the inner entrance of the outer cylinder, the inner cylinder being rotatable, and the electroplating solution injection outlet of the inner cylinder being dislocated from the inner entrance of the outer cylinder to adjust the size of the inner entrance of the outer cylinder.

[0036] The electrolytic device accessory configuration control module comprises an electroplating solution tank, an electroplating solution heater, a pump for conveying electroplating solution, and an electrolytic power supply.

[0037] The electroplating condition monitoring system comprises:

[0038] The plating piece electroplating condition management control module is configured to provide corresponding electroplating condition parameters for the adjustable electrolytic device when performing local electroplating operation test on the semiconductor electronic component.

[0039] The external electroplating mold condition management control module is configured to perform operation on the parameters of the external cylinder of the electroplating mold and the feature data of the local plating area of the semiconductor electronic component by using Formula 1, Formula 2, Formula 3, and Formula 4 to obtain the management control of the conditions of the external cylinder of the electroplating mold.

[0040] The internal electroplating mold condition management control module can be finely adjusted according to the size of the local plating area of the semiconductor electronic component by rotation, and the width of the electroplating solution injection outlet of the internal cylinder and the inner entrance width of the external cylinder D 内 The distance between the two outlets is less than W : D 内 W ;

[0041] The accessory configuration operation condition control module is based on the electrolytic device accessory configuration control module and is applied to the actual electroplating operation of the local plating area of the semiconductor electronic component. The obtained local plating area metal plating layer specification surface area S 实测 is compared with S 外出口 and S 实测 If the following conditions are met:

[0042] S 外出口 ≤ S 实测 ≤ S 外出口 + 0.5mm 2 Formula 5

[0043] then it is confirmed that the adjustable electrolytic device is applicable; otherwise, the actual S 外出口 and S 实测 are used as the reference to correct S 外出口 and verify S 实测 until Formula 5 is met.

[0044] ​In a third aspect, the present application provides a plating method using the adjustable electrolytic device or the plating system, the plating method comprising the following steps:

[0045] S1, assembling the adjustable electrolytic device;

[0046] S2, plating the local plating area of the semiconductor electronic component, operating and managing according to the plating conditions of the plated part, and adjusting and controlling the standard range of the metal plating layer of the local plating area;

[0047] S3, controlling the external plating mold conditions, adjusting the through opening cross-sectional area of the external cylinder of the plating mold through the set external outlet cross-sectional area of the external cylinder S 外出口 , and measuring and controlling the obtained gold plating surface area S 实测 ;

[0048] S4, controlling the internal plating mold conditions, adjusting the through opening cross-sectional area of the internal cylinder of the plating mold through the clockwise rotation of the internal cylinder of the plating mold S 通口 , and measuring and controlling the obtained gold plating surface area S 实测 ;

[0049] S5, based on S2-S4, performing actual plating operation through the set external outlet cross-sectional area of the external cylinder of the local plating area of the semiconductor electronic component S 外出口 , and obtaining the gold plating surface area of the local plating area S 实测 , if formula 5 is satisfied:

[0050] S 外出口 ≤ S 实测 ≤ S 外出口 + 0.5mm 2 Formula 5

[0051] , it is confirmed that the adjustable electrolytic device is applicable; otherwise, taking the actual S 外出口 and S 实测 as the basis, correcting S 外出口 and verifying S 实测 , and repeating steps S2-S4 until formula 5 is satisfied.

[0052] The present application has the following advantages:

[0053] The application provides an adjustable electrolytic device, an electroplating system and an electroplating method. The internal cylinder of the electroplating mold and the external cylinder are organically combined with the control module of the electrolytic device, the partial plating area judgment formula 5 of the adjustable electrolytic device is established, the internal cylinder and the external cylinder of the electroplating mold are constructed, the adjustable electroplating mold internal cylinder opening width setting range and the judgment classification standard of various different single metal salt and two-element metal salt electroplating solution can be quickly established in the actual electroplating process, and the optimal adjustable electrolytic device condition and the electroplating method of the partial plating area of the semiconductor electronic element are obtained. The uniformity of the partial plating layer film thickness of the semiconductor electronic element and the precision of the plating area can be quickly achieved, the demand for the precision of the optimal condition selection of the selective adjustable electroplating mold in the metal plating layer electroplating process of the high-end semiconductor lead frame is met. Moreover, the electroplating mold combination of the one-time adjustable electrolytic device is provided as an updated product, and the adjustable function of the electroplating mold internal cylinder opening width is used to realize the rapid and precise electroplating method for the partial plating area of various semiconductor electronic elements. BRIEF DESCRIPTION OF DRAWINGS

[0054] In order to more clearly illustrate the technical solutions in the embodiments of the application, the following will briefly introduce the drawings needed to be used in the embodiment description. Obviously, the drawings in the following description only some embodiments of the application, and for those skilled in the art, other drawings can also be obtained without creative labor.

[0055] Figure 1 is the structural schematic diagram of the external cylinder provided by the application.

[0056] Figure 2 is the structural schematic diagram of the internal cylinder provided by the application.

[0057] Figure 3 is the structural schematic diagram of the combination of the internal cylinder and the external cylinder provided by the application.

[0058] Figure 4 is the plane schematic diagram of the internal cylinder and the external cylinder connection import and export provided by the application.

[0059] Figure 5 is the overlapping plane schematic diagram of the internal cylinder and the external cylinder connection import and export provided by the application.

[0060] Figure 6 is the misplacement plane schematic diagram of the internal cylinder and the external cylinder connection import and export provided by the application.

[0061] Figure 7 This is a schematic diagram showing the inlet and outlet dimensions and adjacent distances of the connection between the inner and outer cylinders provided by the present invention.

[0062] Figure 8 This is a schematic diagram of the structure of the channel in the outer cylinder provided by the present invention.

[0063] Figure 9 This is a diagram showing the composition of the electroplating system provided by the present invention.

[0064] Figure 10 This is a schematic diagram of a partial plating area of ​​a semiconductor electronic component provided by the present invention.

[0065] In the diagram: 100, Electrolysis unit control system; 110, Semiconductor electronic component local plating area; 120, External electroplating mold channel control module; 130, Internal electroplating mold adjustment and control module; 140, Electrolysis unit auxiliary configuration control module; 200, Electroplating condition monitoring system; 210, Electroplating condition management and control module for plated parts; 220, External electroplating mold condition control module; 230, Internal electroplating mold condition control module; 240, Auxiliary configuration operation condition control module; 500, Internal cylinder; 600, External cylinder. Detailed Implementation

[0066] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0067] Example 1

[0068] like Figures 1 to 8 As shown, this embodiment provides an adjustable electrolysis device for localized electroplating of semiconductor electronic components. The adjustable electrolysis device includes an electroplating mold, which comprises an outer cylinder 600 and an inner cylinder 500 disposed within the outer cylinder 600.

[0069] The outer cylinder 600 is provided with an outlet for the electroplating solution and an inner inlet connected to the outlet. The size of the outlet of the outer cylinder 600 matches the size of the local plating area 110 of the semiconductor electronic component, achieving the purpose of electroplating only on the local plating area. Several outlets of the outer cylinder 600 are located on the outer periphery of the outer cylinder 600, and several inner inlets of the outer cylinder 600 are located on the inner periphery of the outer cylinder 600. The outlets and inlets of the outer cylinder 600 correspond one-to-one and are connected by a channel. The area of ​​the outlet of the outer cylinder 600 is... S 外出口 for:

[0070] S 外出口 = L 外 × D 外 Formula 1

[0071] wherein, L 外 is the long side length of the outer outlet of the outer cylinder 600, D 外 is the short side length of the outer outlet of the outer cylinder 600.

[0072] The inner inlet area of the outer cylinder 600 S 内入口 is greater than the outer outlet area S 外出口 , that is S 内入口 > S 外出口 ; the inner inlet area of the outer cylinder 600 S 内入口 is:

[0073] S 内入口 = L 内 × D 内 Formula 2

[0074] wherein, L 内 is the long side length of the inner inlet of the outer cylinder 600, D 内 is the short side length of the inner inlet of the outer cylinder 600.

[0075] Optionally, the metal material of the outer cylinder 600 includes titanium, titanium plated with platinum, stainless steel 316, and stainless steel 304. The selection needs to be determined according to the characteristics of the electroplating solution. According to the process requirements of the electroplating solution, the surface of some anode metals needs to be plated with noble metals. If the material of the outer cylinder 600 is titanium plated with platinum, it is not necessary to plate the whole electroplating mold, but only the channel inside the outer cylinder 600 of the electroplating mold needs to be plated.

[0076] Optionally, according to the spacing of the semiconductor electronic product, a channel for conveying electroplating solution corresponding to the local plating area of the semiconductor electronic element is arranged within one third of the circumference of the outer cylinder 600, that is, within a range of 120°. The number of channels connecting the outer outlet and the inner inlet of the outer cylinder 600 is calculated according to the spacing of the semiconductor electronic product as follows:

[0077] M = 2 πr / 3 P Equation 3

[0078] wherein, M is the number of channels, r is the outer surface radius of the outer cylinder 600, P is the pitch of the semiconductor electronic product.

[0079] As can be seen from Equation 3, since the effective plating area of the electrolytic anode is limited to one-third of the circumference of the outer mold 600, the effective length is 2 / 3, which is divided by the pitch of the semiconductor electronic product, i.e., the number of independent plating zone channels is obtained. πr πr / 3. P M

[0080] As shown in FIG. 4, the inner cylinder 500 is provided with a plating solution injection outlet. Figure 2 As shown in FIG. 5, the inner cylinder 500 and the outer cylinder 600 are precisely fitted to form an integrated plating mold. In order to solve the limitation of the existing electrolytic anode which can only be used for one type of semiconductor electronic component local plating zone, the electrolytic mold of the present application is internally configured with a selectively adjustable mechanism, which can be adjusted within a certain range according to the size of the local plating zone of the semiconductor electronic product.

[0081] Figure 3 As shown in FIG. 6, the shape and area of the plating solution injection outlet of the inner cylinder 500 are the same as the inner inlet of the outer cylinder 600.

[0082] As shown in FIG. 7, the shape and area of the plating solution injection outlet of the inner cylinder 500 are the same as the inner inlet of the outer cylinder 600, in a completely overlapping state. Figure 4 As shown in FIG. 8, the inner cylinder 500 can be adjusted by rotating clockwise, and by misaligning the plating solution injection outlet of the inner cylinder 500 with the inner inlet of the outer cylinder 600, the size of the inner inlet of the outer cylinder 600 can be adjusted according to the demand, and the flow rate of the plating solution can be adjusted, i.e., under the condition that the flow rate of the plating solution remains unchanged, the more the misalignment increases the overlap and reduces the solution passage, the faster the solution injection flow rate.

[0083] Figure 5 As shown in FIG. 9, the width of the plating solution injection outlet of the inner cylinder 500 and the width of the inner inlet of the outer cylinder 600 内 must be less than the distance between the two outlets

[0084] , i.e., as follows: Figure 6

[0085] As shown in FIG. 10, the width of the plating solution injection outlet of the inner cylinder 500 and the width of the inner inlet of the outer cylinder 600 Figure 7 D W

[0086] ​​​​​​​​D 内 W Formula 4

[0087] As Figure 8 shown, the inner inlet cross-sectional area of the outer cylinder 600 is much larger than the cross-sectional area of the outer outlet.

[0088] The outer outlet area of the outer cylinder 600 of the adjustable electrolysis device S 外出口 satisfies the following formula:

[0089] S 外出口 S 实测 S 外出口 + 0.5mm 2 Formula 5

[0090] wherein, S 实测 is the actual electroplating operation of the partial plating area of the semiconductor electronic component, and the obtained partial plating area metal plating layer specification surface area.

[0091] Optionally, the metal species of the electroplating solution includes:

[0092] Monomer plating layer Au, Ag, Ni, Sn, Cu, Pd, Rh, Pt;

[0093] Binary alloy metal of alloy plating layer Au-Ni, Pd-Ni, Ni-P, W-Ni.

[0094] Wherein, only the inner surface of the passage of the electroplating mold outer cylinder 600 is plated with a platinum plating layer; the adjustable electrolysis device provided by the present application not only has a universal function for similar semiconductor electronic components, but also improves the prior art by only plating the inner surface of the passage, thereby saving expensive precious metal plating materials; at the same time, the electroplating mold of the present application has a certain range of universality, and for different electroplating regions of semiconductor electronic components, only the outer cylinder 600 of the electroplating mold needs to be redesigned and manufactured, and it can be combined with the universal electroplating mold to obtain an electroplating mold for different electroplating regions.

[0095] Example two

[0096] As Figure 9 shown, the present embodiment provides an electroplating system for realizing the actual application of the adjustable electrolysis device to the partial plating area of the semiconductor electronic component, which comprises an electrolysis device control system 100 and an electroplating condition monitoring system (200).​​​

[0097] The electrolysis device control system 100 includes:

[0098] Semiconductor electronic component local plating area 110, used to provide a standard for the design scheme of the electroplating solution outlet of the electroplating mold outer cylinder 600 of the adjustable electrolysis device;

[0099] The external electroplating mold channel control module 120 includes an electroplating mold, which includes an external cylinder 600. The external cylinder 600 is provided with an external outlet for the electroplating solution, a channel connected to the external outlet for the electroplating solution, and an internal inlet for the electroplating solution.

[0100] The internal electroplating mold adjustment and control module 130 includes an electroplating mold, which includes an inner cylinder 500. The inner cylinder 500 is provided with an electroplating solution spray outlet corresponding to the inner inlet of the outer cylinder 600. The inner cylinder 500 can be finely adjusted by rotating clockwise. By misaligning the electroplating solution spray outlet of the inner cylinder 500 with the inner inlet of the outer cylinder 600, the size of the inner inlet of the outer cylinder 600 can be adjusted as needed.

[0101] The electrolysis apparatus auxiliary configuration control module 140 includes: an electroplating solution tank, an electroplating solution heater, a pump for conveying the electroplating solution, and an electrolysis power supply; the electrolysis apparatus auxiliary configuration control module 140 is used in the actual testing of the embodiments of the present invention;

[0102] The electroplating condition monitoring system (200) includes:

[0103] The electroplating condition management and control module 210 is used to provide various electroplating condition parameters for the adjustable electrolysis device to perform local electroplating operation tests on semiconductor electronic components.

[0104] The external electroplating mold condition control module 220 is used to calculate and control the conditions of the external cylinder 600 of the electroplating mold by performing calculations on various parameters of the external cylinder 600 of the electroplating mold and various characteristic data of the local plating area 110 of the semiconductor electronic component through formulas 1, 2, 3 and 4.

[0105] The internal electroplating mold condition control module 230 can be finely adjusted within a certain range according to the size of the local plating area 110 of the semiconductor electronic component by rotating clockwise. This adjustment controls the width of the electroplating solution spray outlet of the inner cylinder 500 and the width of the inner inlet of the outer cylinder 600. D 内 Less than the distance between the two exits W ,Right now D 内 < W ;

[0106] The auxiliary configuration operation condition control module 240, based on the electrolysis device auxiliary configuration control module 140, is applied to the actual electroplating operation of the local plating area 110 of the semiconductor electronic component, and obtains the surface area specification of the metal plating layer in the local plating area. S 实测 ,Compare S 外出口 and S 实测 If the following conditions are met:

[0107] S 外出口 ≤ S 实测 ≤ S 外出口 + 0.5mm 2 Formula 5

[0108] Then confirm that the adjustable electrolysis device is suitable; otherwise, use the actual device. S 外出口 and S 实测 Based on, correction S 外出口 And verify S 实测 Continue until Formula 5 is satisfied.

[0109] The auxiliary configuration operation condition control module 240 is used to precisely control the operation conditions of the auxiliary configuration control module 140 of the electrolysis device during the actual test operation of the adjustable electrolysis device.

[0110] Example 3

[0111] This embodiment provides an electroplating method using the adjustable electrolysis device provided in Embodiment 1 or the electroplating system provided in Embodiment 2, including the following steps:

[0112] S1. Assemble an adjustable electrolysis device;

[0113] Among them, the specifications of semiconductor electronic components are as follows: In this embodiment, the experimental piece for the local plating area to be processed is as follows: Figure 10 As shown, it has 3 columns of cells, each cell measuring 63.5 × 8.5 mm; the spacing between two columns of cells is 51 mm. The standard thickness of the single-sided gold plating is 500 nm.

[0114] The outer cylinder 600 of the electroplating mold: Based on the specifications of semiconductor electronic components, the outer outlet of the outer cylinder 600 of the electroplating mold... L 外 =63.5mm, D 外 =8.5mm; Outer outlet cross-sectional area S外出口 = L 外 × D 外 = 63.5×8.5mm =539.75mm 2 ; in addition, according to the interval between two columns of units of the product is 51mm, therefore, according to the formula 4 the width of the entrance in the outer cylinder 600 of the electroplating mold D 内 must be less than W =51mm; that is, can be selected L 内 =93mm, D 内 =45mm; S 内入口 = 4185mm 2 ; further, the entrance cross-sectional area of the three channels in the outer cylinder 600 of the electroplating mold is much larger than the outer exit cross-sectional area, that is S 内入口 > S 外出口 , with a ratio of more than 7 times;

[0115] The metal material of the outer cylinder 600 of the electroplating mold is titanium, according to the product is gold plated specification, therefore, in order to increase its conductivity, only the channel in contact with the electroplating solution is plated with platinum, to enhance the conductivity of the anode;

[0116] The number of channels of the outer cylinder 600 of the electroplating mold can be calculated according to formula 3, in this embodiment, since the product is 3 columns of units, therefore, the number of channels of the outer cylinder 600 of the electroplating mold is 3;

[0117] The inner cylinder 500 of the electroplating mold: has the same number of 3 inner entrances as the outer cylinder 600, and the same cross-sectional area of the inner entrance, that is L 通口 = 93mm, D 通口 = 45mm; S 通口 = 4185mm 2 ;

[0118] When the inner cylinder 500 of the electroplating mold overlaps with the inner entrance of the outer cylinder 600 of the electroplating mold, the cross-sectional area of the channel through which the electroplating solution can pass is the largest;

[0119] The inner cylinder 500 of the electroplating mold is rotated clockwise, and can be adjusted within a certain range according to the size requirement of the local plating area 110 of the semiconductor electronic element;

[0120] S2, electroplating processing is performed on the local plating area 110 of the semiconductor electronic element, operation management is performed according to the plating conditions of the plated part, and the metal plating layer standard range of the local plating area is regulated and controlled;

[0121] S3, external electroplating mold condition control, through the external outlet cross-sectional area of the external cylinder 600 of the electroplating mold S 外出口 , the gold-plated surface area obtained by actual measurement control management S 实测 ;

[0122] S4, internal electroplating mold condition control, through the cross-sectional area of the through opening adjusted by the clockwise rotation of the internal cylinder 500 of the electroplating mold S 通口 , the gold-plated surface area obtained by actual measurement control management S 实测 ;

[0123] S5, based on S2-S4, actual electroplating operation is performed through the external outlet cross-sectional area of the external cylinder 600 set by the local plating area 110 of the semiconductor electronic element S 外出口 , the gold-plated surface area of the local plating area obtained S 实测 , if formula 5 is satisfied:

[0124] S 外出口 S 实测 S 外出口 + 0.5mm 2 Formula 5

[0125] then it is confirmed that the adjustable electrolysis device is applicable; otherwise, the actual S 外出口 and S 实测 are taken as the basis to correct S 外出口 and verify S 实测 , and the steps S2-S4 are cycled until formula 5 is satisfied.

[0126] Test 1-9

[0127] The adjustable electrolysis device, electroplating system and electroplating method provided by the application are used, and various conditions are implemented according to S1-S5 in the above-mentioned embodiment three, wherein:

[0128] The gold-plated standard area of the local plating area 110 of the semiconductor electronic element is: S 标准 539.75mm 2 ;​​

[0129] The outer outlet cross-sectional area of the electroplating mold external cylinder 600 is set S 外出口 With S 标准 The same: 539.75mm 2 ;

[0130] The electroplating mold internal cylinder 500 passageway width is D 通口 =45mm, by rotating the internal cylinder 500 clockwise, different passageway widths can be obtained, i.e., the passageway width range 0 < w < 45mm; D 通口

[0131] The detection standards of the test conditions of the following implementation are as follows:

[0132] 1. The average gold plating film thickness is ≥500nm,

[0133] 2. The gold plating film thickness distribution uniformity

[0134] 0.0%≤ film thickness error <1.0% excellent

[0135] 1.0%≤ film thickness error <3.0% good

[0136] 3.0%≤ film thickness error <5.0% qualified

[0137] 5.0%≤ film thickness error unqualified

[0138] 3. The accuracy of the measured gold plating area S 实测 whether it meets formula 5.

[0139] Table 1 Electroplating mold internal cylinder passageway width conditions (mm)

[0140]

[0141] The implementation conditions of tests 1-9 are as follows: except that the electroplating mold internal cylinder 500 passageway width conditions in Table 1 are increased in this order, the other conditions remain unchanged, and the gold plating sample processing method is illustrated as follows by taking test 1 as an example.

[0142] The film thickness is detected by Fischer FISCHERSCOPE X-RAY XDV-SDD, the detection position is the center position of the plating layer area of the semiconductor electronic element plating layer area, and each black dot · is detected according to Figure 10 Table 2 Gold plating film thickness (nm) of test 1

[0143] Table 2 Gold plating film thickness (nm) of test 1

[0144] ​

[0145] From Table 2, the gold plating standard 500nm for the local plating area 110 of the semiconductor electronic component, the actual measurement range is 514.43-526.27nm, the film thickness error range based on the gold plating standard 500nm is 2.89%-5.25%, according to the classification standard of gold plating film thickness distribution uniformity, 5.0%≤test 1 result 5.25%, classified as unqualified; therefore, the internal cylinder 500 pass-through width setting condition D 通口 = 7.5mm, cannot meet the classification requirement of gold plating film thickness distribution uniformity of the local plating area 110 of the semiconductor electronic component.

[0146] Further, the 3D profile measuring instrument VR-6000 of Keyence is used to detect the gold plating area of the local plating area 110 of the semiconductor electronic component. The result is:

[0147] The test 1 result S 实测 is: 540.58mm 2 ;

[0148] Further, the tests 2-9 are the same as the test 1, and the specific test data is not described in detail, the gold plating film thickness statistical result is shown in Table 3, and the gold plating area result of the local plating area is shown in Table 4.

[0149] Table 3: Gold plating film thickness (nm) of tests 1-9

[0150]

[0151] Table 4: Gold plating area (mm 2 ) of tests 1-9

[0152]

[0153] From Table 3, the gold plating film thickness distribution uniformity of the local plating area 110 of the semiconductor electronic component is different due to the different internal cylinder 500 pass-through width setting conditions D 通口 of the tests 1-9; when the D 通口 of the test 1 and the test 2 is less than or equal to the set external cylinder 600 external outlet width D 外出口 , the gold plating film thickness distribution uniformity obtained by the test exceeds the 5% limit value of the discrimination classification, therefore, the test 1 and the test 2 belong to the unqualified category; further, when the D 通口 of the test 8 and the test 9 is much higher than the set external cylinder 600 external outlet widthD 外出口 8.5mm, therefore, test 8 and test 9 also belong to the unqualified category; except test 1, test 8 and test 9, test 2-7 all have the gold-plating film thickness distribution uniformity less than the 5% limit value of the discriminant classification, therefore, all belong to the qualified category, among which, test 5 and test 6 have good test results.

[0154] Further, from table 4, according to the different conditions of the inside cylinder 500 through opening width of the electroplating mold of test 1-9, D 通口 the gold-plating area of the local plating area 110 of the semiconductor electronic component is different; the measured gold-plating area of test 1 S 实测 is greater than the standard gold-plating area of the local plating area by S 标准 a difference of S 实测 ~ S 标准 0.5mm 2 , therefore, test 1 belongs to the unqualified category; further, when the measured gold-plating area of test 8 and test 9 D 通口 is far greater than the set outside cylinder 600 outlet width D 外出口 8.5mm, the measured gold-plating area exceeds the discriminant standard 0.5mm 2 , therefore, test 8 and test 9 also belong to the unqualified category; except test 1, test 8 and test 9, test 2-7 all have the gold-plating film thickness distribution uniformity less than the 5% limit value of the discriminant standard 2 , therefore, all belong to the qualified category, among which, test 4 and test 5 have excellent test results.

[0155] Comprehensive results of table 3 and table 4 show that the gold-plating method of the semiconductor electronic component local plating area 110 by the adjustable electrolytic device of the present application, the adjustable setting range of the inside cylinder 500 through opening width of the electroplating mold is 13.5-33.5mm of test 3-7. D 通口 .

[0156] In addition, it is particularly pointed out that the third embodiment is only a representative of a plurality of semiconductor electronic component partial plating areas 110 that can be implemented, and the adjustable electrolytic device plating mold combination features according to the present application can be used to make plating molds according to the method of the present application for various semiconductor electronic component products with different partial plating area sizes and shapes, and the outer outlet of the plating mold is made according to the size and shape of the different semiconductor electronic component partial plating area 110; the inner inlet is the same size as the original plating mold inner cylinder 500, and can be overlapped. In other words, the prior art so far has improved the plating mold or re-made the plating mold to adjust the plating product, which can be replaced by the adjustable electrolytic device plating mold combination of the present application, and the adjustable function of the plating mold inner cylinder 500 can realize the rapid and accurate plating method for various semiconductor electronic component partial plating areas 110.

[0157] In summary, the adjustable electrolytic device, plating system and plating method provided by the present application can quickly establish the adjustable electrolytic device partial plating area discrimination formula 5 through the organic integration of formula 1-4 in the design of the inner cylinder 500 and the outer cylinder 600 of the plating mold and the electrolytic device auxiliary configuration control module 140, and through a series of formula 1-formula 5 management control, the structure of the inner cylinder 500 and the outer cylinder 600 of the plating mold is established, which can quickly establish the adjustable plating mold inner cylinder 500 passage width setting range and discrimination classification standard of various different single metal salt and two-element metal salt plating solution in the actual plating process, and further obtain the optimal adjustable electrolytic device condition and plating method for the semiconductor electronic component partial plating area 110, which can quickly realize the uniformity of the semiconductor electronic component partial plating layer thickness and the precision of the plating area, and meet the precision requirement of the optimal condition selection of the selective adjustable plating mold in the metal plating process of the high-end semiconductor lead frame. Moreover, the once adjustable electrolytic device plating mold combination is provided as an update to the prior art, which needs to continuously improve the plating mold or re-make the plating mold to adjust the plating product, and the adjustable function of the plating mold inner cylinder 500 can realize the rapid and accurate plating method for various semiconductor electronic component partial plating areas.

[0158] The above embodiments are only used to illustrate the technical solutions of the present application, but not limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that the technical solutions recorded in the foregoing embodiments can be modified, or some technical features can be replaced by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should be included in the protection scope of the present application.

Claims

1. An adjustable electrolysis device, characterized by, The electroplating mold comprises an outer cylinder (600) and an inner cylinder (500) arranged in the outer cylinder (600); the outer cylinder (600) is provided with an outer outlet and an inner inlet communicated with the outer outlet through a channel; The outer exit area of the outer cylinder (600) S 外出口 is: S 外出口 = L 外 × D 外 Equation 1 wherein, L 外 is a long side length of the outer cylinder (600) outer outlet, D 外 is a short side length of the outer cylinder (600) outer outlet; the inner inlet area of the outer cylinder (600) S 内入口 greater than the outer outlet area S 外出口 , the inner inlet area of the outer cylinder (600) S 内入口 is: S 内入口 = L 内 × D 内 Formula 2 wherein, L 内 is the long side length of the inner entrance of the outer cylinder (600), D 内 is the short side length of the inner entrance of the outer cylinder (600). The number of channels connecting the outer outlet and the inner inlet of the outer cylinder (600) is calculated according to the pitch of the semiconductor electronic product as follows: M = 2 πr / 3 P Equation 3 wherein, M is the number of channels, r is the outer surface radius of the outer cylinder (600), P is the pitch of the semiconductor electronic product; The inner cylinder (500) is provided with an electroplating solution injection outlet, and the inner cylinder (500) can rotate to dislocate the electroplating solution injection outlet of the inner cylinder (500) from the inner inlet of the outer cylinder (600) to adjust the size of the inner inlet of the outer cylinder (600) and the flow rate of the electroplating solution; The width of the plating solution ejection outlet of the inner cylinder (500) and the inner inlet width of the outer cylinder (600) D 内 Less than the distance between the two outlets W : D 内 W Equation 4​ The outer exit area of the outer cylinder (600) S 外出口 satisfies the following equation: S 外出口 ≤ S 实测 ≤ S 外出口 + 0.5mm 2 Formula 5 wherein, S 实测 For the actual electroplating operation of the local plating area of the semiconductor electronic component, the specification surface area of the metal plating layer of the local plating area is obtained.

2. An adjustable electrolysis device according to claim 1, wherein The size of the outer outlet of the outer cylinder (600) is matched with the size of the local plating area (110) of the semiconductor electronic element.

3. An adjustable electrolysis device according to claim 1, wherein A plurality of outer outlets of the outer cylinder (600) are arranged on the outer periphery of the outer cylinder (600), a plurality of inner inlets of the outer cylinder (600) are arranged on the inner periphery of the outer cylinder (600), the outer outlet and the inner inlet of the outer cylinder (600) correspond to each other and are communicated through a channel.

4. An adjustable electrolysis device according to claim 1, wherein The metal material of the outer cylinder (600) comprises titanium, titanium plated with platinum, stainless steel 316 and stainless steel 304.

5. An adjustable electrolysis device according to claim 4, wherein, When the material of the outer cylinder (600) is selected as titanium plated with platinum, only the inside of the channel of the electroplating mold outer cylinder (600) is plated.

6. An adjustable electrolysis device according to claim 1, wherein The metal types of the electroplating solution include: Single-layer plating layers of Au, Ag, Ni, Sn, Cu, Pd, Rh and Pt; Binary alloy metals of Au-Ni, Pd-Ni, Ni-P and W-Ni.

7. An electroplating system characterized by, The adjustable electrolytic device uses the adjustable electrolytic device according to any one of claims 1-6, and the electroplating system comprises an electrolytic device control system (100) and an electroplating condition monitoring system (200); The electrolytic device control system (100) comprises: A local plating area (110) of a semiconductor electronic element is used to provide a standard for the design scheme of the electroplating solution outlet of the electroplating mold outer cylinder (600) of the adjustable electrolytic device; An outer electroplating mold channel control module (120) comprises an electroplating mold, the electroplating mold comprises an outer cylinder (600), the outer cylinder (600) is provided with an electroplating solution outer outlet, a channel communicated with the electroplating solution outer outlet, and an electroplating solution inner inlet; An inner electroplating mold adjustment and control module (130) comprises an electroplating mold, the electroplating mold comprises an inner cylinder (500), the inner cylinder (500) is provided with an electroplating solution injection outlet corresponding to the inner inlet of the outer cylinder (600), and the inner cylinder (500) can rotate to dislocate the electroplating solution injection outlet of the inner cylinder (500) from the inner inlet of the outer cylinder (600) to adjust the size of the inner inlet of the outer cylinder (600); An electrolytic device auxiliary configuration control module (140) comprises an electroplating solution tank, an electroplating solution heater, a pump for conveying electroplating solution, and an electrolysis power supply; The electroplating condition monitoring system (200) comprises: A plating condition management control module (210) is configured to provide corresponding plating condition parameters for the adjustable electrolytic device to test the local plating operation of the semiconductor electronic component; An external plating mold condition management control module (220) is configured to operate the parameters of the external cylinder (600) of the plating mold and the feature data of the local plating area (110) of the semiconductor electronic component by formula 1, formula 2, formula 3 and formula 4 to obtain the management control of the predetermined conditions of the external cylinder (600) of the plating mold; The internal electroplating mold condition control module (230) can be fine-tuned according to the size of the local plating area (110) of the semiconductor electronic component, the width of the electroplating solution injection outlet of the internal cylinder (500) and the width of the inner inlet of the external cylinder (600) through rotation D 内 The distance between the two outlets is less than two W : D 内 W ;​ An accessory configuration operation condition control module (240) based on the electrolytic device accessory configuration control module (140) is applied to the actual electroplating operation of the local plating area (110) of the semiconductor electronic component, and the obtained local plating area metal plating layer specification surface area S 实测 , comparison S 外出口 and S 实测 , if the following conditions are met: S 外出口 ≤ S 实测 ≤ S 外出口 + 0.5mm 2 Formula 5 then the adjustable electrolysis device is confirmed to be applicable; otherwise, the actual S 外出口 and S 实测 as a reference, correct S 外出口 and verify S 实测 until formula 5 is met.

8. A method of electroplating, characterized by, The plating method comprises the following steps: S1, assembling the adjustable electrolytic device; S2, plating processing the local plating area (110) of the semiconductor electronic component, and performing operation management according to the plating conditions of the plated part to control the standard range of the local plating area metal plating layer. S3, external electroplating mold condition control, through the set external outlet cross-sectional area of the external cylinder (600) of the electroplating mold S 外出口 , the measured control management of the gold-plated surface area S 实测 ; S4, internal electroplating mold condition control, the through opening cross-sectional area obtained by adjusting the internal cylinder (500) of the electroplating mold by clockwise rotation S 通口 , the gold-plated surface area obtained by actual measurement control management S 实测 ; S5, based on S2-S4, the external exit cross-sectional area of the external cylinder (600) set by the partial plating area (110) of the semiconductor electronic component S 外出口 Actual plating operation is performed, and the gold-plated surface area of the partial plating area is obtained S 实测 If formula 5 is satisfied: S 外出口 ≤ S 实测 ≤ S 外出口 + 0.5mm 2 Formula 5 If yes, it is confirmed that the adjustable electrolysis device is applicable; otherwise, the actual S 外出口 and S 实测 As a reference, the correction S 外出口 and verification S 实测 , the steps S2-S4 are cycled until formula 5 is satisfied.

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