A surface array spectral domain interference semiconductor multilayer film measurement device with ultra-wideband synthetic light source and its implementation method

Abstract

The present invention discloses a semiconductor multilayer film measurement device and implementation method using an ultra-wideband synthetic light source for surface array spectral domain interference, belonging to the field of precision optical measurement technology. The surface array spectral domain interference detection device of the present invention comprises an ultra-wideband synthetic light source, an interference system, a surface array spectrometer, a semiconductor multilayer film test piece, and the like. The proposed measurement method uses an ultra-wideband synthetic light source with good interference properties to excite the multilayer film layer profile and cross-scale thickness distribution full-field information, forms a carrier multi-parameter interference signal by the interference system, and records the interference information by the surface array spectrometer. Finally, through array spectrum analysis, the multilayer film layer profile and thickness distribution information are synchronously obtained.

Description

Technical Field

[0001] The present invention belongs to the field of precision optical measurement technology, and specifically relates to an interferometric measurement device and implementation method based on an ultra-wideband synthetic light source and a planar array spectrometer, which is used for high-precision nondestructive testing of the three-dimensional profile and thickness distribution of multilayer films in semiconductor manufacturing. Background Art

[0002] As semiconductor device structures evolve toward micro- and nano-integration, traditional single-layer films are no longer sufficient. The development of semiconductor multilayer films with higher performance, lower power consumption, and higher integration densities has significantly improved transistor performance, power consumption, and integration. Existing research has primarily focused on specific material systems and detection methods, but technical bottlenecks remain in key areas such as real-time dynamic monitoring and cross-scale correlation analysis.

[0003] To this end, the present invention proposes a planar array spectral domain interferometry semiconductor multilayer film measurement device and method with an ultra-wideband synthetic light source. This is a non-destructive measurement method that does not require sample preparation, ensures the integrity and non-destructiveness of the multilayer film, and realizes dynamic measurement through multi-information synchronous carriers. That is, only one planar array spectral domain interferogram is needed to realize the carrier and tomography reconstruction of the full-field information of the layered profile and thickness distribution. Summary of the Invention

[0004] The purpose of the present invention is to address the limitations of existing semiconductor multilayer film measurement technology that mainly relies on single-point scanning measurement, and to provide a measurement device and implementation method that integrates ultra-wideband synthetic light source and area array detection, aiming to achieve high-efficiency, high-precision and stable precise measurement of the layered profile and thickness distribution of semiconductor multilayer films.

[0005] The present invention is achieved through the following technical solutions:

[0006] A semiconductor multilayer film measuring device using an array spectral domain interferometer with an ultra-wideband synthetic light source comprises an ultra-wideband synthetic light source, an interference system, an array spectrometer, a semiconductor multilayer film device under test, and a computer processing unit. The ultra-wideband synthetic light source is a continuous spectrum generated by multiple tunable lasers through nonlinear fiber coupling, wherein nonlinear effects are generated during the nonlinear fiber coupling process, and the nonlinear effects include self-phase modulation (SPM) or four-wave mixing (FWM). The interference system comprises a spatial filter, a collimating lens, a beam splitter, a reference mirror, an objective lens, and an imaging lens.

[0007] As a preferred embodiment, the continuous spectrum generated by the ultra-wideband synthetic light source passes through a spatial filter, a collimating lens, a spectrometer, and a reference mirror to reach the semiconductor multilayer film test piece. The light reflected back from the surface of the semiconductor multilayer film test piece and the light reflected back from the surface of the reference mirror interfere with each other, and the interference signal is transmitted to the computer processing unit via the area array spectrometer.

[0008] A method for realizing a semiconductor multilayer film measuring device using an array spectral domain interferometry of an ultra-wideband synthetic light source comprises the following steps:

[0009] Step S1: System calibration: including cavity length calibration and reference mirror error calibration;

[0010] Step S2: Focus positioning: ensure that the interference objective lens and the surface of the test piece are in the optimal imaging plane to maximize the contrast of the interference fringes;

[0011] Step S3: Area array spectral data acquisition: The ultra-wideband synthetic light source excites the multilayer film reflection signal, and the area array spectrometer obtains the interference signal with a single exposure. ,in, represents the spatial coordinates of the sample, Indicates wavelength;

[0012] Step S4: Data Reconstruction: Spectral Domain Interference Signals Collected from the Array Spectrometer Extract signal data , where i = 1, 2…n, j = 1, 2…p, n and p are the pixels in the horizontal and vertical directions of the array spectrometer respectively; k = 1, 2…N, Extract light intensity signal data for the wavelength tuning range Reorganize; the reorganized signal data forms a light intensity array ,in The kth wavelength channel is represented by the quantitative model of phase difference versus light intensity I, which is established by the recombined signal data. k The spatial coordinates of the wavelength channel samples Array data of position;

[0013] Step S5: Information separation: Design a sampling weight function and use a weighted multi-step algorithm to separate the multi-surface information of the test piece;

[0014] Step S6: Layer thickness estimation: Preliminary estimation of the thickness of each layer based on the optical path difference, and threshold detection to locate the reflection peak position , perform initial thickness calculation: ,in, is the peak position of the optical path difference of the kth layer, is the material reference refractive index;

[0015] Step S7: Thickness and 3D profile calculation: Based on the initial thickness of step S6 according to the light intensity array data As the starting point of iterative optimization, thickness calculation is performed based on the initial thickness of step S6, Provide the spatial distribution of thickness of each layer, perform 3D contour reconstruction, and output thickness distribution and 3D contours ;

[0016] Step S8: Interlayer coupling compensation and optimization: Based on the thickness of the output of step S7 and refractive index Constructing the transmission matrix T , calculate the theoretical interference signal , based on the theoretical interference signal and measured interference data Correct the coupling error caused by multiple reflections between layers and improve the inversion accuracy, including transmission matrix inversion and genetic algorithm optimization.

[0017] As a preferred embodiment, the method includes a reference mirror error compensation and thickness optimization feedback mechanism, wherein the reference mirror error compensation feedback mechanism is a reference mirror error compensation matrix The thickness is transferred to the thickness and three-dimensional profile calculation to eliminate the influence of the system wavefront distortion on the morphology. The thickness optimization feedback mechanism is the interlayer coupling compensation and the optimized thickness is transmitted back to the layer thickness estimation module to dynamically correct the initial estimated layer thickness.

[0018] As a preferred embodiment, the cavity length calibration in step S1 is to use a standard quartz cavity to measure the maximum value of the reflected light intensity and determine the optimal working distance. , ,in, z is the axial position of the sample, The reference mirror error calibration is to use a high-precision plane mirror to calibrate the reference mirror wavefront distortion, and use Zernike polynomials to fit the distortion phase to generate a compensation matrix. .

[0019] As a preferred embodiment, the phase difference is established in step S4 to determine the intensity I The quantitative model is: ,in, For location Place, wavelength The background light intensity, is the wavelength-dependent refractive index of the 𝑘th layer, is the sample thickness.

[0020] As a preferred embodiment, the weighted multi-step algorithm used in step S5 is expressed as:

[0021] ,

[0022] ;

[0023] in, is the initial phase, is the contrast of sub-signals in each layer; and The sampling weight functions for the cosine term and the sine term, respectively, can be designed based on the inverse discrete Fourier transform principle and are in the form of: , , is the sampling weight function of the cosine term of the kth layer, is the sampling weight function of the k-th layer sine term, is the general form of the window function, is the harmonic phase shift value in the case of multi-surface interference.

[0024] As a preferred embodiment, the thickness calculation in step S7 is as follows: the initial thickness output in step S6 is used as a starting point for the iterative algorithm, and the precise thickness is calculated using a nonlinear least squares iterative algorithm: ,in, is the k-th layer position point The measured data at is the wavelength-dependent refractive index of the 𝑘th layer, is the thickness of the kth layer, The iteration starts with the initial value. The initial thickness output in step S6 provides the theoretical thickness distribution of each layer. Step S7 limits the phase-height mapping to the correct range by constraining the position of the interlayer interface. The three-dimensional profile is reconstructed as: ,in, is a three-dimensional contour map, It is k The change in the layer unwrapping phase relative to the reference plane, is the experimental calibration coefficient, , is the refractive index of air, The compensation matrix is ​​generated by fitting the distortion phase using Zernike polynomials.

[0025] As a preferred embodiment, the transmission matrix in step S8 ,in, is the interface matrix of the 𝑘th interface, is the Fresnel amplitude reflection coefficient, is the propagation matrix of the 𝑘th layer, is the phase delay of the forward wave, is the phase delay of the reverse wave, is the wavelength-dependent refractive index of the 𝑘th layer, is the thickness of the 𝑘th layer, is the total number of layers in the multilayer film.

[0026] From the transmission matrix Extract the complex amplitude reflection coefficient of the sample from , ,in, , and is the transfer matrix Elements, represents the forward transmission coefficient, represents the reverse transmission coefficient.

[0027] From the complex amplitude reflection coefficient , calculate the theoretical interference signal , ,in is the spectral density of the ultra-wideband light source, is the amplitude reflection coefficient of the reference arm, The phase term of the reference arm, where is the physical path length of the reference arm, is the phase delay, is the complex amplitude reflection coefficient of the sample, The phase term of the sample arm, where is the equivalent path length of the sample arm, is the phase delay.

[0028] As a preferred embodiment, the genetic algorithm is optimized to construct an objective function: , and update the parameters and iterate the thickness and refractive index ,in, is the measured interference data, is the theoretical interference signal.

[0029] The measuring device and method of the present invention have the following beneficial effects:

[0030] The purpose of the present invention is to address the limitations of existing semiconductor multilayer film measurement technology that mainly relies on single-point scanning measurement, and to provide a measurement device and method that integrates ultra-wideband synthetic light source and area array detection, aiming to achieve high-efficiency, high-precision and stable precision measurement of the layered profile and thickness distribution of nano-scale semiconductor multilayer films. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The present invention is further described in detail below with reference to the accompanying drawings and specific embodiments:

[0032] Attachment Figure 1 Schematic diagram of the device system principle of the present invention.

[0033] Attachment Figure 2 This is a schematic diagram of the synthesis principle of the ultra-wideband synthetic light source of the present invention.

[0034] Attachment Figure 3 Schematic diagram of data reorganization of the present invention.

[0035] Attachment Figure 4 Flow chart of the measurement method of the present invention.

[0036] Attachment Figure 1 Figure 1: 1. Ultra-wideband synthetic light source; 2. Spatial filter; 3. Collimating lens; 4. Beam splitter; 5. Reference mirror; 6. Semiconductor multilayer film test piece; 7. Objective lens; 8. Imaging lens; 9. Area array spectrometer; 10. Computer processing unit. DETAILED DESCRIPTION

[0037] The following is a detailed description of an embodiment of the present invention in conjunction with the accompanying drawings: This embodiment is implemented on the premise of the technical solution of the present invention, and a detailed implementation method and specific operation process are given, but the protection scope of the present invention is not limited to the following embodiment.

[0038] like Figure 1 、 2 As shown, a semiconductor multilayer film measurement device using an array spectral domain interferometer with an ultra-wideband synthetic light source includes an ultra-wideband synthetic light source 1, an interferometer system, an array spectrometer 9, a semiconductor multilayer film device under test 6, and a computer processing unit 10. The ultra-wideband synthetic light source 1 generates a continuous spectrum from multiple tunable lasers via nonlinear fiber coupling. The interferometer system includes a spatial filter 2, a collimating lens 3, a beam splitter 4, a reference mirror 5, an objective lens 7, and an imaging lens 8. The continuous spectrum generated by the ultra-wideband synthetic light source 1 passes through the spatial filter 2, collimating lens 3, beam splitter 4, and reference mirror 5 before reaching the semiconductor multilayer film device under test 6. Light reflected from the surface of the semiconductor multilayer film device under test 6 interferes with light reflected from the surface of the reference mirror 5, and the interference signal is transmitted to the computer processing unit 10 via the array spectrometer. Nonlinear effects are generated during the nonlinear fiber coupling process, including self-phase modulation (SPM) or four-wave mixing (FWM).

[0039] like Figure 2-4 As shown, a method for realizing a semiconductor multilayer film measurement device using an array spectral domain interferometry of an ultra-wideband synthetic light source includes the following steps:

[0040] Step S1: System calibration: including cavity length calibration and reference mirror error calibration;

[0041] Step S2: Focus positioning: ensure that the interference objective lens and the surface of the test piece are in the optimal imaging plane to maximize the contrast of the interference fringes;

[0042] Step S3: Area array spectral data acquisition: The ultra-wideband synthetic light source excites the multilayer film reflection signal, and the area array spectrometer obtains the interference signal with a single exposure. ,in, represents the spatial coordinates of the sample, Indicates wavelength;

[0043] Step S4: Data Reconstruction: Spectral Domain Interference Signals Collected from the Array Spectrometer Extract signal data , where i = 1, 2…n, j = 1, 2…p, n and p are the pixels in the horizontal and vertical directions of the array spectrometer respectively; k = 1, 2…N, Extract light intensity signal data for the wavelength tuning range Reorganize; the reorganized signal data forms a light intensity array ,in The kth wavelength channel is represented by the quantitative model of phase difference versus light intensity I, which is established by the recombined signal data. k The spatial coordinates of the wavelength channel samples Array data of position;

[0044] Step S5: Information separation: Design a sampling weight function and use a weighted multi-step algorithm to separate the multi-surface information of the test piece;

[0045] Step S6: Layer thickness estimation: Preliminary estimation of the thickness of each layer based on the optical path difference, and threshold detection to locate the reflection peak position , perform initial thickness calculation: ,in, is the peak position of the optical path difference of the kth layer, is the material reference refractive index;

[0046] Step S7: Thickness and 3D profile calculation: Based on the initial thickness of step S6 according to the light intensity array data As the starting point of iterative optimization, thickness calculation is performed based on the initial thickness of step S6, Provide the spatial distribution of thickness of each layer, perform 3D contour reconstruction, and output thickness distribution and 3D contours ;

[0047] Step S8: Interlayer coupling compensation and optimization: Based on the thickness of the output of step S7 and refractive index Constructing the transmission matrix T , calculate the theoretical interference signal , based on the theoretical interference signal and measured interference data Correct the coupling error caused by multiple reflections between layers and improve the inversion accuracy, including transmission matrix inversion and genetic algorithm optimization.

[0048] The method includes a reference mirror error compensation and thickness optimization feedback mechanism, wherein the reference mirror error compensation feedback mechanism is a reference mirror error compensation matrix The thickness is transferred to the thickness and three-dimensional profile calculation to eliminate the influence of the system wavefront distortion on the morphology. The thickness optimization feedback mechanism is the interlayer coupling compensation and the optimized thickness is transmitted back to the layer thickness estimation module to dynamically correct the initial estimated layer thickness.

[0049] The cavity length calibration in step S1 is to use a standard quartz cavity to measure the maximum value of the reflected light intensity and determine the optimal working distance. , ,in, z is the axial position of the sample, The reference mirror error calibration is to use a high-precision plane mirror to calibrate the reference mirror wavefront distortion, and use Zernike polynomials to fit the distortion phase to generate a compensation matrix. .

[0050] In step S4, the phase difference is established to determine the light intensity I The quantitative model is: ,in, For location Place, wavelength The background light intensity, is the wavelength-dependent refractive index of the 𝑘th layer, is the sample thickness.

[0051] The weighted multi-step algorithm used in step S5 is expressed as:

[0052] ,

[0053] ;

[0054] in, is the initial phase, is the contrast of sub-signals in each layer; and The sampling weight functions for the cosine term and the sine term, respectively, can be designed based on the inverse discrete Fourier transform principle and are in the form of: , , is the sampling weight function of the cosine term of the kth layer, is the sampling weight function of the k-th layer sine term, is the general form of the window function, is the harmonic phase shift value in the case of multi-surface interference.

[0055] The thickness calculation in step S7 is as follows: the initial thickness output in step S6 is used as the starting point for the iterative algorithm, and the precise thickness is calculated using a nonlinear least squares iterative algorithm: ,in, is the k-th layer position point The measured data at is the wavelength-dependent refractive index of the 𝑘th layer, is the thickness of the kth layer, The iteration starts with the initial value. The initial thickness output in step S6 provides the theoretical thickness distribution of each layer. Step S7 limits the phase-height mapping to the correct range by constraining the position of the interlayer interface. The three-dimensional profile is reconstructed as: ,in, is a three-dimensional contour map, It is k The change in the layer unwrapping phase relative to the reference plane, is the experimental calibration coefficient, , is the refractive index of air, The compensation matrix is ​​generated by fitting the distortion phase using Zernike polynomials.

[0056] The transmission matrix in step S8 ,in, is the interface matrix of the 𝑘th interface, is the Fresnel amplitude reflection coefficient, is the propagation matrix of the 𝑘th layer, is the phase delay of the forward wave, is the phase delay of the reverse wave, is the wavelength-dependent refractive index of the 𝑘th layer, is the thickness of the 𝑘th layer, is the total number of layers in the multilayer film.

[0057] From the transmission matrix Extract the complex amplitude reflection coefficient of the sample from , ,in, , and is the transfer matrix Elements, represents the forward transmission coefficient, represents the reverse transmission coefficient.

[0058] From the complex amplitude reflection coefficient , calculate the theoretical interference signal , ,in is the spectral density of the ultra-wideband light source, is the amplitude reflection coefficient of the reference arm, The phase term of the reference arm, where is the physical path length of the reference arm, is the phase delay, is the complex amplitude reflection coefficient of the sample, The phase term of the sample arm, where is the equivalent path length of the sample arm, is the phase delay.

[0059] The genetic algorithm optimization is to construct the objective function: , and update the parameters and iterate the thickness and refractive index ,in, is the measured interference data, is the theoretical interference signal.

[0060] The basic principles, main features, and advantages of the present invention are shown and described above. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions are merely illustrative of the principles of the present invention. Various changes and modifications may be made to the present invention without departing from the spirit and scope of the present invention. Such changes and modifications are intended to fall within the scope of the present invention. The scope of protection claimed in the present invention is defined by the appended claims and their equivalents.

Claims

1. A surface array spectral domain interferometry semiconductor multilayer film measurement device with an ultra-wideband synthetic light source, characterized in that: The invention comprises an ultra-wideband synthetic light source, an interference system, a planar array spectrometer, a semiconductor multilayer film test piece, and a computer processing unit; the ultra-wideband synthetic light source is a continuous spectrum generated by multiple tunable lasers through nonlinear optical fiber coupling; the interference system comprises a spatial filter, a collimating lens, a spectroscope, a reference mirror, an objective lens, and an imaging lens; and a method for realizing a planar array spectral domain interference semiconductor multilayer film measurement device using the ultra-wideband synthetic light source comprises the following steps: Step S1: System calibration: including cavity length calibration and reference mirror error calibration; Step S2: Focus positioning: ensure that the interference objective lens and the surface of the test piece are in the optimal imaging plane to maximize the contrast of the interference fringes; Step S3: area array spectral data acquisition: an ultra-wideband synthetic light source excites the multilayer film reflection signal, and the area array spectrometer acquires the interference signal I(x, y, λ) in a single exposure, where (x, y) represents the spatial coordinates of the sample and λ represents the wavelength; Step S4: Data reorganization: Extract signal data I(x, y, λ) from the spectral domain interference signal I(x, y, λ) acquired by the area array spectrometer. i ,y j ,λ k ), where i = 1, 2…n, j = 1, 2…p, n and p are the pixels in the horizontal and vertical directions of the array spectrometer respectively; k = 1, 2…N, λ1…λ N is the wavelength tuning range, extract the light intensity signal data I(x i ,y j ,λ k ) is reorganized; the reorganized signal data forms an array I (x, y, λ k ), where λ k Represents the kth wavelength channel, and establishes a quantitative model of phase difference versus light intensity I based on the reorganized signal data, representing the array data of the spatial coordinate (x, y) position of the kth wavelength channel sample; Step S5: Information separation: Design a sampling weight function and use a weighted multi-step algorithm to separate the multi-surface information of the test piece; Step S6: Layer thickness estimation: Preliminary estimation of the thickness of each layer based on the optical path difference, and threshold detection to locate the reflection peak position ΔL k , perform initial thickness calculation: Where, Δl k is the peak position of the optical path difference of the kth layer, is the material reference refractive index; Step S7: Thickness and 3D profile calculation: Based on the initial thickness of step S6 according to the light intensity array data As the starting point of iterative optimization, thickness calculation is performed based on the initial thickness of step S6 Provide the spatial distribution of thickness of each layer, perform 3D contour reconstruction, and output thickness distribution d k (x, y) and the three-dimensional contour h k (x, y); Step S8: Interlayer coupling compensation and optimization: Based on the thickness d output of step S7 k (x, y) and refractive index n k (λ) Construct the transmission matrix T and calculate the theoretical interference signal I model (λ), based on the theoretical interference signal I model (λ) and measured interference data I meas (λ) Correct the coupling error caused by multiple reflections between layers and improve the inversion accuracy, including transmission matrix inversion and genetic algorithm optimization.

2. The method for realizing the semiconductor multilayer film measurement device using an array spectral domain interferometry of an ultra-wideband synthetic light source according to claim 1, characterized in that: The continuous spectrum generated by the ultra-wideband synthetic light source passes through a spatial filter, a collimating lens, a spectroscope, and a reference mirror to reach the semiconductor multilayer film test piece. The light reflected back from the surface of the semiconductor multilayer film test piece and the light reflected back from the surface of the reference mirror interfere with each other, and the interference signal is transmitted to the computer processing unit via the area array spectrometer.

3. The method for implementing the semiconductor multilayer film measurement device using an ultra-wideband synthetic light source array spectral domain interferometry according to claim 1 is characterized in that: The method includes a reference mirror error compensation and thickness optimization feedback mechanism. The reference mirror error compensation feedback mechanism is to transfer the reference mirror error compensation matrix C(x, y) to the thickness and three-dimensional profile calculation to eliminate the influence of the system wavefront distortion on the morphology. The thickness optimization feedback mechanism is to transfer the interlayer coupling compensation and the optimized thickness back to the layer thickness estimation module to dynamically correct the initial estimated layer thickness.

4. The method for realizing the semiconductor multilayer film measurement device using an array spectral domain interferometry of an ultra-wideband synthetic light source according to claim 1, characterized in that: In step S1, the cavity length is calibrated by measuring the maximum value of the reflected light intensity using a standard quartz cavity to determine the optimal working distance z0, z0 = argmax [I r (z)], where z is the axial position of the sample, I r is the intensity of the reflected light received by the detector. The reference mirror error calibration is to use a high-precision plane mirror to calibrate the reference mirror wavefront distortion, and use Zernike polynomials to fit the distortion phase to generate a compensation matrix C(x, y).

5. The method for realizing the semiconductor multilayer film measurement device using an array spectral domain interferometry of an ultra-wideband synthetic light source according to claim 4, characterized in that: The quantitative model of phase difference versus light intensity I established in step S4 is: Among them, I0(x,y,λ k ) is the position (x, y), wavelength λ k The background light intensity under k ) is the wavelength λ k The refractive index of the sample is d(x, y), and d(x, y) is the thickness of the 6. The method for realizing the semiconductor multilayer film measurement device using an array spectral domain interferometry of an ultra-wideband synthetic light source according to claim 1, characterized in that: The weighted multi-step algorithm used in step S5 is expressed as: in, is the initial phase, γ m is the contrast of each layer’s sub-signal; a m and b m The sampling weight functions for the cosine term and the sine term, respectively, can be designed based on the inverse discrete Fourier transform principle and are in the form of: a m (k) is the sampling weight function of the cosine term of the kth layer, b m (k) is the sampling weight function of the k-th layer sine term, w(k) is the general form of the window function, is the harmonic phase shift value in the case of multi-surface interference.

7. The method for realizing the semiconductor multilayer film measurement device using an array spectral domain interferometry of an ultra-wideband synthetic light source according to claim 4, characterized in that: The thickness calculation in step S7 is as follows: the initial thickness output in step S6 is used as the starting point for the iterative algorithm, and the precise thickness is calculated using a nonlinear least squares iterative algorithm: in, is the measured data at the k-th layer position point (x, y), n k (λ) is the wavelength-dependent refractive index of the kth layer, d k is the thickness of the kth layer, The iteration starts with the initial value. The initial thickness output in step S6 provides the theoretical thickness distribution of each layer. Step S7 limits the phase-height mapping to the correct range by constraining the position of the interlayer interface. The three-dimensional profile is reconstructed as: Among them, h k (x, y) is the three-dimensional contour map, is the change of the kth layer unwrapped phase relative to the reference plane, α is the experimental calibration coefficient, n0=1, is the refractive index of air, and C(x, y) is the compensation matrix generated by fitting the distortion phase using Zernike polynomials.

8. The method for realizing the semiconductor multilayer film measurement device using an array spectral domain interferometry of an ultra-wideband synthetic light source according to claim 1, characterized in that: The transmission matrix in step S8 in, is the interface matrix of the kth interface, is the Fresnel amplitude reflection coefficient, is the propagation matrix of the kth layer, is the phase delay of the forward wave, is the phase delay of the reverse wave, n k (λ) is the wavelength-dependent refractive index of the kth layer, n k-1 (λ) is the wavelength-dependent refractive index of the k-1 layer, d k (x, y) is the thickness of the kth layer, and N is the total number of layers in the multilayer film; Extract the complex amplitude reflection coefficient r of the sample from the transmission matrix T s (λ), in, T 11 and T 21 is the element of the transmission matrix T, T 11 represents the forward transmission coefficient, T 21 represents the reverse transmission coefficient; From the complex amplitude reflection coefficient r s (λ), calculate the theoretical interference signal I model (λ), Where S(λ) is the spectral density of the ultra-wideband light source, r R is the amplitude reflection coefficient of the reference arm, The phase term of the reference arm, where z R is the physical path length of the reference arm, is the phase delay, r s (λ) is the complex amplitude reflection coefficient of the sample, The phase term of the sample arm, where z s is the equivalent path length of the sample arm, is the phase delay.

9. The method for realizing the semiconductor multilayer film measurement device using an array spectral domain interferometry of an ultra-wideband synthetic light source according to claim 1, characterized in that: The genetic algorithm is optimized to construct the objective function: min∑ λ [I meas (λ)-I model (λ)] 2 , and update the parameters, iterative thickness d k (x, y) and refractive index n k (λ), where I meas is the measured interference data, I model is the theoretical interference signal.

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