Dual-mode fused temperature monitoring system

Abstract

The invention relates to the technical field of temperature monitoring, in particular to a dual-mode fused temperature monitoring system, which comprises a first optical path module, a second optical path module, an optical coupling module, a temperature detection module and an analysis module, the analysis module obtains first temperature information and second temperature information according to the first reflection signal and the second reflection signal and analyzes the first temperature information and the second temperature information to obtain analyzed temperature. According to the invention, the two direct band gap semiconductor detection units are respectively driven by the first and second optical path modules, accurate temperature measurement is realized through an interference spectrum generated by the first direct band gap semiconductor detection unit, and the second direct band gap semiconductor detection unit generates an absorption edge reflection spectrum to position a temperature interval. The problem of interference spectrum overlapping in a wide temperature range is effectively solved, and high-precision temperature demodulation is realized.

Description

Technical Field

[0001] The present invention relates to the technical field of temperature monitoring, and specifically relates to a temperature monitoring system with dual-mode fusion. Background Art

[0002] As one of the most basic and common physical quantities, the measurement of temperature runs through various fields of modern technology, including precise temperature control in semiconductor manufacturing, temperature monitoring of turbine blades in the aerospace field, detection of body temperature changes in medical diagnosis, and temperature monitoring in energy development. With the continuous expansion of these application scenarios, the requirements for the measurement range, accuracy, anti-interference ability, and response speed of temperature measurement are also getting higher and higher.

[0003] The existing technologies have carried out extensive explorations in the field of high-precision fiber optic temperature sensing technology around performance such as measurement range and response speed. However, they mostly rely on external reference temperature sources or complex algorithm compensation, and it is difficult to achieve real-time and automatic analysis, which limits the practicality and environmental adaptability of the system. Summary of the Invention

[0004] (1) Objectives of the Invention

[0005] The objective of the present invention is to provide a temperature monitoring system that uses dual modes for temperature detection, limits the temperature range through one mode, and resolves the precise temperature within the limited temperature range to achieve high-precision temperature measurement within a wide temperature range.

[0006] (2) Technical Solutions

[0007] To solve the above problems, the present invention provides a temperature monitoring system with dual-mode fusion, including:

[0008] A first optical path module, a second optical path module, an optical coupling module, a temperature detection module, and an analysis module;

[0009] The temperature detection module includes a first direct bandgap semiconductor detection unit and a second direct bandgap semiconductor detection unit;

[0010] The first optical path module outputs a first optical signal, which is transmitted to the temperature detection module through the optical coupling module. The first direct bandgap semiconductor detection unit of the temperature detection module reflects the first optical signal to generate a first reflected signal, and the first reflected signal is transmitted to the analysis module through the optical coupling module and the first optical path module;

[0011] The second optical path module outputs a second optical signal, which is transmitted to the temperature detection module through the optical coupling module. The second direct bandgap semiconductor detection unit of the temperature detection module reflects the second optical signal to generate a second reflected signal, and the second reflected signal is transmitted to the analysis module through the optical coupling module and the second optical path module;

[0012] The parsing module obtains first temperature information and second temperature information according to the first reflected signal and the second reflected signal respectively, and parses the first temperature information and the second temperature information to obtain parsed temperature.

[0013] On the other hand, preferably, the temperature detection module includes an optical fiber, a direct bandgap semiconductor, and a reflection medium. The optical fiber, the direct bandgap semiconductor, and the reflection medium are connected in sequence. The first end of the optical fiber is connected to the optical coupling module, the second end of the optical fiber is connected to the incident end of the direct bandgap semiconductor, and the reflection end of the direct bandgap semiconductor is connected to the reflection medium.

[0014] On the other hand, preferably, the first direct bandgap semiconductor detection unit is a Fabry-Perot cavity structure formed based on a direct bandgap semiconductor structure. The Fabry-Perot cavity structure generates an interference spectrum through the reflection medium, and the interference spectrum is the first reflected signal.

[0015] On the other hand, preferably, the second direct bandgap semiconductor detection unit generates an absorption edge reflection spectrum based on the reflection of a direct bandgap semiconductor crystal, and the absorption edge reflection spectrum is the second reflected signal.

[0016] On the other hand, preferably, the first optical path module includes a first broadband light source, a first optical path management unit, and a first spectral analysis unit;

[0017] The first optical signal output by the first broadband light source sequentially passes through the first optical path management unit, the optical coupling module to the temperature detection module, and the first reflected optical signal sequentially passes through the temperature detection module, the optical coupling module, the first optical path management unit, and the first spectral analysis unit to the parsing module.

[0018] On the other hand, preferably,

[0019] The second optical path module includes a second broadband light source, a second optical path management unit, and a second spectral analysis unit;

[0020] The second optical signal output by the second broadband light source sequentially passes through the second optical path management unit, the optical coupling module to the temperature detection module, and the second reflected optical signal sequentially passes through the temperature detection module, the optical coupling module, the second optical path management unit, and the second spectral analysis unit to the parsing module.

[0021] On the other hand, preferably,

[0022] The parsing module includes an interference spectrum analysis unit, an absorption edge spectrum analysis unit, and a parsing unit;

[0023] The interference spectrum analysis unit compares and analyzes the first reflection signal with the first temperature-wavelength curve to obtain the first temperature information;

[0024] The absorption edge spectrum analysis unit compares and analyzes the second reflection signal with the second temperature-wavelength curve to obtain the second temperature information;

[0025] The analysis unit analyzes the first temperature information and the second temperature information to obtain the analyzed temperature.

[0026] On the other hand, preferably, the interference spectrum analysis unit compares and analyzes the first reflection signal with the first temperature-wavelength curve to obtain the first temperature information, including:

[0027] Process the first reflection signal information to extract the interference spectrum peak wavelength or phase;

[0028] Compare the extracted peak wavelength with the first temperature-wavelength curve to obtain the first temperature information.

[0029] On the other hand, preferably, the absorption edge spectrum analysis unit compares and analyzes the second reflection signal with the second temperature-wavelength curve to obtain the second temperature information, including:

[0030] Process the second reflection signal information to extract the absorption edge wavelength;

[0031] Compare the extracted absorption edge wavelength with the second temperature-wavelength curve to obtain the second temperature information.

[0032] On the other hand, preferably, the analysis unit analyzes the first temperature information and the second temperature information to obtain the analyzed temperature, including:

[0033] The second temperature information is used to locate the temperature range, and the first temperature information is analyzed through the temperature range to obtain the analyzed temperature.

[0034] (III) Beneficial effects

[0035] The above technical solution of the present invention has the following beneficial technical effects:

[0036] By adopting the first / second optical path modules to drive two direct bandgap semiconductor detection units respectively, the present invention realizes precise temperature measurement through the interference spectrum generated by the first direct bandgap semiconductor detection unit, and at the same time, the second direct bandgap semiconductor detection unit generates an absorption edge reflection spectrum to locate the temperature range, effectively solving the problem of overlapping interference spectra in a wide temperature range obtained by the ordinary Fabry-Perot cavity temperature measurement, and realizing high-precision temperature demodulation in a wide temperature range. Description of the drawings

[0037] Figure 1 is a schematic diagram of the overall structure of an embodiment of the present invention;

[0038] Figure 2 is a schematic diagram of the structure of the temperature detection module of an embodiment of the present invention;

[0039] Figure 3 is a schematic diagram of the overall structure of another embodiment of the present invention;

[0040] Figure 4 is a schematic diagram of the structure of the analysis module of an embodiment of the present invention;

[0041] Figure 5 is a graph showing the relationship between the absorption coefficient of a direct bandgap semiconductor and photon energy in an embodiment of the present invention;

[0042] Reference numerals:

[0043] 1: First optical path module, 101: First broadband light source, 102: First optical path management unit, 103: First spectral analysis unit,

[0044] 2: Second optical path module, 201: Second broadband light source, 202: Second optical path management unit, 203: Second spectral analysis unit,

[0045] 3: Optical coupling module,

[0046] 4: Temperature detection module, 401: Optical fiber, 402: Direct bandgap semiconductor, 403: Reflective medium,

[0047] 5: Analysis module, 501: Interference spectral analysis unit, 502: Absorption edge spectral analysis unit, 503: Analysis unit. Detailed implementation manners

[0048] To make the objectives, technical solutions and advantages of the present invention clearer and more understandable, the present invention will be further described in detail below in conjunction with specific implementation manners and with reference to the accompanying drawings. It should be understood that these descriptions are merely exemplary and are not intended to limit the scope of the present invention. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessarily confusing the concepts of the present invention.

[0049] Schematic diagrams of the structures according to the embodiments of the present invention are shown in the accompanying drawings. These figures are not drawn to scale, in which for the purpose of clarity, some details are enlarged and some details may be omitted. The shapes of various regions and layers shown in the figures, as well as their relative sizes and positional relationships, are merely exemplary. In practice, there may be deviations due to manufacturing tolerances or technical limitations, and those skilled in the art can design regions / layers with different shapes, sizes, and relative positions according to actual requirements.

[0050] Obviously, the described embodiments are some but not all of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention.

[0051] In the description of the present invention, it should be noted that the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance.

[0052] In addition, the technical features involved in different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0053] The present invention will be described in more detail below with reference to the accompanying drawings. In the respective drawings, like elements are denoted by like reference numerals. For the sake of clarity, the various parts in the drawings are not drawn to scale.

[0054] Embodiment 1

[0055] A temperature monitoring system with dual-mode fusion, Figure 1 shows a schematic diagram of the overall structure of an embodiment of the present invention, as Figure 1 shown, including:

[0056] A first optical path module 1, a second optical path module 2, an optical coupling module 3, a temperature detection module 4, and an analysis module 5.

[0057] The temperature detection module 4 includes a first direct bandgap semiconductor detection unit and a second direct bandgap semiconductor detection unit; here, the principles on which the first direct bandgap semiconductor detection unit and the second direct bandgap semiconductor detection unit detect temperature are different. In this embodiment, Figure 2 shows a schematic diagram of the structure of the temperature detection module of an embodiment of the present invention, as Figure 2As shown, the temperature detection module 4 includes an optical fiber 401, a direct bandgap semiconductor 402, and a reflection medium 403. The optical fiber 401, the direct bandgap semiconductor 402, and the reflection medium 403 are connected in sequence. The first end of the optical fiber 401 is connected to the optical coupling module 3, the second end of the optical fiber 401 is connected to the incident end of the direct bandgap semiconductor 402, and the reflection end of the direct bandgap semiconductor 402 is connected to the reflection medium 403. The specific content of the reflection medium 403 is not limited here. Optionally, it can be a metal mirror such as a copper mirror, a silver mirror, an aluminum mirror, etc., which has good reflection performance and can efficiently reflect light, and is commonly used in optical instruments, mirrors, etc.; a high-reflectivity coating such as a mixture of pigments with high reflectivity and resins, etc., can be coated on the surface of an object to make it have a reflection function, and is applied in fields such as building insulation and automotive painting; a reflective glass such as a coated glass, with one or more layers of metal, metal oxide, or other compound thin films deposited on the glass surface, can reflect light of a specific wavelength, and is widely used in building facades, vehicle window glasses, etc., which can not only ensure lighting but also play a role in heat insulation and reflecting external light, etc.

[0058] In this embodiment, the first direct bandgap semiconductor detection unit is a Fabry-Perot cavity structure formed based on the direct bandgap semiconductor structure. The Fabry-Perot cavity structure generates an interference spectrum through the reflection medium 403, and the interference spectrum is the first reflection signal. The incident end and the reflection end of the direct bandgap semiconductor 402 are arranged in parallel, and the incident end and the reflection end are the parallel mirrors of the Fabry-Perot cavity structure. The Fabry-Perot cavity structure generates an interference spectrum through the reflection medium 403, and the interference spectrum is the first reflection signal. The Fabry-Perot cavity structure for generating an interference spectrum includes: after the first optical signal passes through the optical fiber, it enters the direct bandgap semiconductor 402, and through the reflection medium, it continuously reflects and transmits between the incident end and the reflection end, forming parallel light with a decreasing amplitude between the incident end and the reflection end; generating an interference spectrum according to the parallel light. When the temperature changes, the thermal expansion effect of the direct bandgap semiconductor will change the optical path difference of the Fabry-Perot cavity, thereby causing the shift of the interference spectrum. By detecting the change of the interference spectrum, high-precision temperature measurement can be realized. In this embodiment, the material of the direct bandgap semiconductor can be: gallium arsenide (GaAs), gallium nitride (GaN), indium phosphide (InP), etc.

[0059] The second direct bandgap semiconductor detection unit generates an absorption edge reflection spectrum based on the reflection of the direct bandgap semiconductor crystal, and the absorption edge reflection spectrum is the second reflection signal. After the valence electrons in the direct bandgap semiconductor crystal material absorb sufficient photon energy, they will be excited to cross the forbidden band. The above absorption is called intrinsic absorption, and the critical wavelength of the intrinsic absorption is the absorption edge wavelength. That is, if the wavelength of light is greater than the absorption edge wavelength, the single photon energy is less than the forbidden band width, and the light of this wavelength is not absorbed by the direct bandgap semiconductor crystal; on the contrary, if the wavelength of light is less than or equal to the absorption edge wavelength, the single photon energy is greater than the forbidden band width and can be absorbed by the direct bandgap semiconductor crystal. Figure 5 shows the relationship diagram between the absorption coefficient of the direct bandgap semiconductor and the photon energy in an embodiment of the present invention, as Figure 5 shown, α represents the absorption coefficient, hν represents the photon energy. After the photon energy is greater than the forbidden band width of the direct bandgap semiconductor crystal, the absorption coefficient increases significantly. At the same time, the forbidden band width is a function of temperature, and the absorption edge wavelength is proportional to the forbidden band width. Therefore, the absorption edge wavelength is positively correlated with temperature. Based on the above principle, at a certain temperature, the light with a wavelength greater than the absorption edge wavelength is not absorbed because the single photon energy is less than the forbidden band width and is reflected by the direct bandgap semiconductor crystal; in the absorption edge reflection spectrum, the higher the temperature, the larger the absorption edge wavelength, and the absorption edge reflection spectrum gradually moves to the right.

[0060] The first optical path module 1 outputs a first optical signal with a specific wavelength, which is transmitted to the temperature detection module 4 through the optical coupling module 3. The optical coupling module 3 plays a role of signal distribution and integration here, accurately transmitting the first optical signal to the temperature detection module 4. The first direct bandgap semiconductor detection unit of the temperature detection module 4 reflects the first optical signal to generate a first reflection signal, and the first reflection signal is transmitted to the analysis module 5 through the optical coupling module 3 and the first optical path module 1; in the temperature detection module 4, after the first optical signal interacts with the first direct bandgap semiconductor detection unit, the generated first reflection signal will return along the original path, pass through the optical coupling module 3 again, and finally be transmitted to the analysis module 5 through the first optical path module 1. In this embodiment, the first optical path module 1 includes a first broadband light source 101, a first optical path management unit 102, and a first spectral analysis unit 103; the first broadband light source 101, the first optical path management unit 102, the optical coupling module 3, and the temperature detection module 4 are connected in sequence, and the temperature detection module 4, the optical coupling module 3, the first optical path management unit 102, the first spectral analysis unit 103, and the analysis module 5 are connected in sequence; the first optical signal output by the first broadband light source 101 goes from the first optical path management unit 102 and the optical coupling module 3 to the temperature detection module 4 in sequence, and the first reflected optical signal goes from the temperature detection module 4, the optical coupling module 3, the first optical path management unit 102, and the first spectral analysis unit 103 to the analysis module 5 in sequence. Figure 3 shows the overall structural schematic diagram of another embodiment of the present invention, asFigure 3 As shown in the figure, in this embodiment, the first broadband light source 101 uses a broadband light source in the 1550 nm band, such as an ASE, SLED or other light source. The first optical path management unit 102 is a circulator, which is responsible for managing and controlling the transmission path of the first optical signal to ensure that the first optical signal can be transmitted in a predetermined direction and path, avoiding signal chaos and interference. A circulator is a multi-port non-reciprocal device that realizes the orderly transmission of optical signals. The first spectral analysis unit 103 is a spectral acquisition unit in the 1550 nm band, which is used to convert the light returned by the temperature detection module 4 into analyzable spectral data, and existing products can be selected based on the required demodulation accuracy; the first spectral analysis unit 103 detects and analyzes the first optical signal after optical path transmission and reflection to obtain the spectral information of the first reflected optical signal. The spectral information contains information related to the physical quantity (such as temperature) detected by the temperature detection module 4, providing a data basis for subsequent calculation and analysis. The optical coupling module 3 multiplexes and couples optical signals of different wavelengths to realize the transmission of multiple optical signals in the same optical fiber, improving the transmission efficiency of the optical fiber and the integration degree of the system. At the same time, when the optical signal returns, it can also separate and guide the reflected optical signal so that it can accurately reach the corresponding detection unit.

[0061] The second optical path module 2 outputs a second optical signal. The second optical signal has a specific wavelength and is transmitted to the temperature detection module 4 through the optical coupling module 3. The second direct bandgap semiconductor detection unit of the temperature detection module 4 reflects the second optical signal to generate a second reflected signal. The second reflected signal is transmitted to the analysis module 5 through the optical coupling module 3 and the second optical path module 2; in this embodiment, the second optical path module 2 includes a second broadband light source 201, a second optical path management unit 202 and a second spectral analysis unit 203; the second broadband light source 201, the second optical path management unit 202, the optical coupling module 3, and the temperature detection module 4 are connected in sequence, and the temperature detection module 4, the optical coupling module 3, the second optical path management unit 202, the second spectral analysis unit 203, and the analysis module 5 are connected in sequence; the second optical signal output by the second broadband light source 201 passes through the second optical path management unit 202 and the optical coupling module 3 in sequence to the temperature detection module 4, and the second reflected optical signal passes through the temperature detection module 4, the optical coupling module 3, the second optical path management unit 202, and the second spectral analysis unit 203 in sequence to the analysis module 5. As Figure 3 shown, the second broadband light source 201 is a broadband light source capable of outputting in the 880 nm band, such as a halogen lamp, LED, SLED or other light source. The second optical path management unit 202 is a 1*2 single-mode fiber coupler, and the second spectral analysis unit 203 is a spectral acquisition unit corresponding to the 880 nm band.

[0062] The analysis module 5 obtains first temperature information and second temperature information based on the first reflected signal and the second reflected signal respectively, and analyzes the first temperature information and the second temperature information to obtain the analyzed temperature. Figure 4 The figure shows a schematic structural diagram of the analysis module according to an embodiment of the present invention, as Figure 4 shown. Further, in this embodiment, the analysis module 5 includes an interference spectrum analysis unit 501, an absorption edge spectrum analysis unit 502, and an analysis unit 503;

[0063] The interference spectrum analysis unit 501 compares and analyzes the first reflected signal with the first temperature wavelength curve to obtain the first temperature information; the specific content of the comparison and analysis between the first reflected signal and the first temperature wavelength curve is not limited here. In this embodiment, it includes:

[0064] Perform Gaussian calibration on the first reflected signal to extract the peak wavelength or phase of the interference spectrum; during the transmission of the first reflected signal, it will be affected by various noises and interferences, resulting in distortion of the spectral signal. Gaussian calibration fits and corrects the first reflected signal based on the Gaussian function. Through Gaussian calibration, the noise and clutter in the signal can be removed, making the spectral curve smoother, so as to more accurately determine the peak position of the interference spectrum; in the interference spectrum, there is a specific correspondence between the peak wavelength and the temperature. When the external temperature changes, the interference effect will cause the peak wavelength of the spectrum to shift.

[0065] Compare the extracted peak wavelength with the first temperature wavelength curve to obtain the first temperature information. The first temperature wavelength curve can be obtained by measuring the peak wavelength of the first reflected signal under different known temperature conditions, establishing the correspondence between temperature and peak wavelength, forming the first temperature wavelength curve, which reflects the influence law of temperature change on the peak wavelength of the interference spectrum.

[0066] The absorption edge spectrum analysis unit 502 compares and analyzes the second reflected signal with the second temperature wavelength curve to obtain the second temperature information; the specific content of the comparison and analysis between the second reflected signal and the second temperature wavelength curve is not limited here. In this embodiment, it includes analyzing the second reflected signal using the cross-correlation algorithm to extract the absorption edge wavelength; through the cross-correlation algorithm, the second reflected signal can be compared with a standard absorption edge signal to find the best matching position between the two, so as to accurately extract the absorption edge wavelength.

[0067] Compare the extracted absorption edge wavelength with the second temperature wavelength curve to obtain the second temperature information. There is also a close relationship between the absorption edge wavelength and temperature. Under different temperature conditions, the light absorption characteristics of substances will change, resulting in a shift in the absorption edge wavelength. The second temperature wavelength curve is obtained during the system calibration phase by measuring the absorption edge wavelength of the second reflection signal under different known temperature conditions and establishing a corresponding relationship between temperature and the absorption edge wavelength.

[0068] The analysis unit 503 analyzes the first temperature information and the second temperature information to obtain the analyzed temperature, including: the second temperature information is used to locate the temperature range, and the first temperature information is analyzed through the temperature range to obtain the analyzed temperature.

[0069] The present invention realizes high-precision temperature measurement through the F-P interference spectrum shift, and at the same time overcomes the limitation of the free spectral range on interference demodulation through the principle of absorption edge shift, thereby realizing high-precision temperature measurement in a wide temperature range. The temperature sensitivity of the system of the present invention reaches 0.12 nm / °C, the wavelength demodulation resolution is 0.1 pm, and the temperature demodulation error is ±0.3 °C.

[0070] It should be understood that the above specific embodiments of the present invention are only used for exemplary illustration or explanation of the principle of the present invention, and do not constitute a limitation on the present invention. Therefore, any modifications, equivalent replacements, improvements, etc. made without departing from the spirit and scope of the present invention shall be included within the protection scope of the present invention. In addition, the appended claims of the present invention are intended to cover all changes and modifications that fall within the scope and boundaries of the appended claims, or equivalent forms of such scope and boundaries.

[0071] In the above description, no detailed description is made of the technical details such as the composition and etching of each layer. However, those skilled in the art should understand that various means in the prior art can be used to form layers, regions, etc. of the required shapes. In addition, in order to form the same structure, those skilled in the art can also design methods that are not exactly the same as the methods described above.

[0072] The above has described the present invention with reference to the embodiments of the present invention. However, these embodiments are only for the purpose of illustration and not for limiting the scope of the present invention. The scope of the present invention is defined by the appended claims and their equivalents. Without departing from the scope of the present invention, those skilled in the art can make various substitutions and modifications, and these substitutions and modifications should all fall within the scope of the present invention.

[0073] Although the embodiments of the present invention have been described in detail, it should be understood that various changes, substitutions, and alterations can be made to the embodiments of the present invention without departing from the spirit and scope of the present invention.

[0074] Obviously, the above embodiments are merely examples for clear illustration and not limitations on the implementation manners. For those of ordinary skill in the art, other different forms of changes or variations can be made based on the above description. It is not necessary and impossible to enumerate all implementation manners here. And the obvious changes or variations derived therefrom are still within the protection scope of the present invention.

Claims

1. A temperature monitoring system with dual-mode fusion, characterized in that, Including: A first optical path module (1), a second optical path module (2), an optical coupling module (3), a temperature detection module (4), and an analysis module (5); The temperature detection module (4) includes a first direct bandgap semiconductor detection unit and a second direct bandgap semiconductor detection unit; The first optical path module (1) outputs a first optical signal, which is transmitted to the temperature detection module (4) through the optical coupling module (3). The first direct bandgap semiconductor detection unit of the temperature detection module (4) reflects the first optical signal to generate a first reflection signal, and the first reflection signal is transmitted to the analysis module (5) through the optical coupling module (3) and the first optical path module (1); The second optical path module (2) outputs a second optical signal, which is transmitted to the temperature detection module (4) through the optical coupling module (3). The second direct bandgap semiconductor detection unit of the temperature detection module (4) reflects the second optical signal to generate a second reflection signal, and the second reflection signal is transmitted to the analysis module (5) through the optical coupling module (3) and the second optical path module (2); The analysis module (5) respectively obtains first temperature information and second temperature information according to the first reflection signal and the second reflection signal, and analyzes the first temperature information and the second temperature information to obtain an analyzed temperature.

2. The temperature monitoring system according to claim 1, characterized in that, The temperature detection module (4) includes an optical fiber (401), a direct bandgap semiconductor (402), and a reflection medium (403). The optical fiber (401), the direct bandgap semiconductor (402), and the reflection medium (403) are connected in sequence. The first end of the optical fiber (401) is connected to the optical coupling module (3), the second end of the optical fiber (401) is connected to the incident end of the direct bandgap semiconductor (402), and the reflection end of the direct bandgap semiconductor (402) is connected to the reflection medium.

3. The temperature monitoring system according to claim 2, wherein The first direct bandgap semiconductor detection unit is a Fabry - Perot cavity structure formed based on a direct bandgap semiconductor structure. The Fabry - Perot cavity structure generates an interference spectrum through the reflection medium (403), and the interference spectrum is the first reflection signal.

4. The temperature monitoring system according to claim 3, characterized in that, The second direct bandgap semiconductor detection unit generates an absorption edge reflection spectrum based on the reflection of a direct bandgap semiconductor crystal, and the absorption edge reflection spectrum is the second reflection signal.

5. The temperature monitoring system according to claim 1, characterized in that, The first optical path module (1) includes a first broadband light source (101), a first optical path management unit (102), and a first spectral analysis unit (103); The first optical signal output by the first broadband light source (101) goes from the first optical path management unit (102) and the optical coupling module (3) to the temperature detection module (4) in sequence, and the first reflected optical signal goes from the temperature detection module (4), the optical coupling module (3), the first optical path management unit (102), and the first spectral analysis unit (103) to the analysis module (5) in sequence.

6. The temperature monitoring system according to claim 1, wherein The second optical path module (2) includes a second broadband light source (201), a second optical path management unit (202), and a second spectral analysis unit (203); The second optical signal output by the second broad-spectrum light source (201) travels from the second optical path management unit (202) and the optical coupling module (3) to the temperature detection module (4) in sequence, and the second reflected optical signal travels from the temperature detection module (4), the optical coupling module (3), the second optical path management unit (202), and the second spectral analysis unit (203) to the analysis module (5) in sequence.

7. The temperature monitoring system according to claim 3, wherein the analysis module (5) includes an interference spectrum analysis unit (501), an absorption edge spectrum analysis unit (502), and an analysis unit (503); the interference spectrum analysis unit (501) compares and analyzes the first reflected signal with the first temperature wavelength curve to obtain first temperature information; the absorption edge spectrum analysis unit (502) compares and analyzes the second reflected signal with the second temperature wavelength curve to obtain second temperature information; the analysis unit (503) obtains an analysis temperature by analyzing the first temperature information and the second temperature information.

8. The temperature monitoring system according to claim 7, wherein, The interference spectrum analysis unit (501) comparing and analyzing the first reflected signal with the first temperature wavelength curve to obtain first temperature information includes: processing the first reflected signal information to extract the interference spectrum peak wavelength or phase; comparing the extracted peak wavelength with the first temperature wavelength curve to obtain first temperature information.

9. The temperature monitoring system according to claim 7, characterized in that, The absorption edge spectrum analysis unit (502) comparing and analyzing the second reflected signal with the second temperature wavelength curve to obtain second temperature information includes: processing the second reflected signal information to extract the absorption edge wavelength; comparing the extracted absorption edge wavelength with the second temperature wavelength curve to obtain second temperature information.

10. The temperature monitoring system according to claim 7, characterized in that, The analysis unit (503) obtaining an analysis temperature by analyzing the first temperature information and the second temperature information includes: the second temperature information is used to locate the temperature range, and the first temperature information is analyzed through the temperature range to obtain the analysis temperature.

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