Solar cell assembly and preparation method thereof, and perovskite cell assembly

Abstract

The present invention discloses a solar cell assembly, a method for preparing the same, and a perovskite cell assembly. The solar cell assembly includes: a first conductive layer, a functional layer, a protective layer, and a second conductive layer stacked in sequence; the solar cell assembly also includes a plurality of wire slot groups, each of which includes: a first wire slot, and second and third wire slots nested within the first wire slot; the first wire slot penetrates the functional layer to expose the first conductive layer and is filled with at least the protective layer; the second wire slot penetrates at least the protective layer to expose the first conductive layer and is filled with the second conductive layer; and the third wire slot penetrates the second conductive layer to expose the protective layer. Using only one protective layer, the second conductive layer at the first, second, and third wire slots can be isolated from the functional layer, preventing ion diffusion between the functional layer and the second conductive layer, which could cause instability in the solar cell assembly.

Description

Technical Field

[0001] The present invention relates to the field of battery technology, in particular to a solar cell assembly and a preparation method thereof, and a perovskite cell assembly. Background Art

[0002] In existing solar cell modules, such as perovskite solar cell modules, the conductive layer is in direct contact with the functional layer, such as the perovskite layer, on the side walls of some cable grooves. The metal ions in the conductive layer will diffuse with the perovskite layer and undergo degradation reactions, thereby affecting the stability of the solar cell module.

[0003] To address the instability of solar cell modules caused by direct contact between the conductive layer and the perovskite layer, existing technologies have proposed using a protective layer to separate the perovskite layer from the conductive layer. However, this conventional technology requires multiple protective layers to be applied to different locations of the wiring ducts to ensure that the conductive layer in each duct is isolated from the perovskite layer. However, the multiple protective layer applications complicate the manufacturing process, the solar cell module structure, and increase costs. Summary of the Invention

[0004] The present invention provides a solar cell assembly and a preparation method thereof, and a perovskite cell assembly, so as to solve the problem of increased costs caused by multiple preparations of protective layers.

[0005] According to a first aspect of the present invention, a solar cell assembly is provided, comprising: a first conductive layer, a functional layer, a protective layer, and a second conductive layer stacked in sequence along a first direction; and a plurality of wire trough groups, each of the wire trough groups comprising:

[0006] a first wire groove, passing through the functional layer to the first conductive layer, wherein the first wire groove is at least filled with the protective layer;

[0007] a second wire groove, nested in the first wire groove, wherein the second wire groove at least passes through the protective layer to the first conductive layer;

[0008] a third wire groove, nested in the first wire groove, and the third wire groove passes through the second conductive layer to the protective layer;

[0009] The second conductive layer fills the second wire slot and is electrically connected to the first conductive layer in the second wire slot. In each wire slot group, the third wire slots are located on the same side of the second wire slot. Optionally, the functional layer includes a first transmission layer, a light absorption layer, and a second transmission layer stacked in sequence along the first direction, with the first transmission layer located on a side of the light absorption layer close to the first conductive layer.

[0010] The first wire groove passes through the first transmission layer, the light absorption layer and the second transmission layer, and is filled with the protective layer;

[0011] The second wire groove penetrates the protection layer to expose the first conductive layer.

[0012] Optionally, the functional layer includes a first transmission layer, a light absorbing layer, and a second transmission layer stacked in sequence along the first direction, and the first transmission layer is located on a side of the light absorbing layer close to the first conductive layer;

[0013] The first wire groove passes through the first transmission layer and the light absorption layer, and is filled with the protective layer and the second transmission layer;

[0014] The second wire groove penetrates the protection layer and the second transmission layer to expose the first conductive layer.

[0015] Optionally, for any of the wire trough groups, any edge of the second wire trough does not overlap with any edge of the first wire trough;

[0016] For any of the wire trough groups, any edge of the third wire trough does not overlap with any edge of the first wire trough.

[0017] Optionally, in each of the wire groove groups, the distance between the second wire groove and the third wire groove is greater than or equal to 5 microns and less than or equal to 10 microns;

[0018] The distance between the side of the second wire groove away from the third wire groove and the side of the first wire groove away from the third wire groove is greater than or equal to 5 microns and less than or equal to 10 microns;

[0019] The distance between the side of the third linear groove away from the second linear groove and the side of the first linear groove away from the second linear groove is greater than or equal to 5 micrometers and less than or equal to 10 micrometers.

[0020] Optionally, each of the wire trough groups further includes a fourth wire trough, and in each of the wire trough groups, the third wire trough is located on the same side of the second wire trough, the fourth wire trough, the second wire trough, and the third wire trough are arranged along a second direction, and along the second direction, in the same wire trough group, the second wire trough is located between the third wire trough and the fourth wire trough; the second direction intersects with the first direction;

[0021] The functional layer includes a first transmission layer, a light absorbing layer, and a second transmission layer stacked in sequence, wherein the first transmission layer is located on a side of the light absorbing layer close to the first conductive layer;

[0022] The fourth linear groove passes through the first conductive layer and is filled with the first transmission layer and the light absorption layer;

[0023] Alternatively, the fourth linear groove passes through the first conductive layer and the first transmission layer and is filled with the light absorbing layer.

[0024] Optionally, the width of the second linear groove is greater than or equal to 20 microns and less than or equal to 60 microns:

[0025] The width of the third groove is greater than or equal to 15 microns and less than or equal to 25 microns;

[0026] The width of the fourth groove is greater than or equal to 15 micrometers and less than or equal to 25 micrometers.

[0027] According to a second aspect of the present invention, a perovskite cell assembly is provided, comprising: a first conductive layer, a perovskite layer, a protective layer, and a second conductive layer stacked in sequence along a first direction; and a plurality of wire slot groups, each of the wire slot groups comprising:

[0028] a first wire groove, the first wire groove passing through the perovskite layer to the first conductive layer, the first wire groove being at least filled with the protective layer;

[0029] a second wire groove formed in the first wire groove, wherein the second wire groove at least penetrates the protective layer to expose the first conductive layer;

[0030] a third wire groove formed in the first wire groove, wherein the third wire groove penetrates the second conductive layer to expose the protective layer;

[0031] The second conductive layer fills the second wire groove and is connected to the first conductive layer in the second wire groove, and the protective layer separates the perovskite layer and the second conductive layer.

[0032] According to a third aspect of the present invention, a perovskite cell assembly is provided, comprising: a first conductive layer, a perovskite layer, a protective layer, and a second conductive layer stacked in sequence in a first direction; and a plurality of wire slot groups, each of the wire slot groups comprising:

[0033] a first wire groove having a first groove bottom surface, the first wire groove extending through the perovskite layer to the first conductive layer, and the first wire groove being at least filled with the protective layer;

[0034] a second wire groove having a second groove bottom surface, wherein the second wire groove at least penetrates the protective layer to expose the first conductive layer;

[0035] a third wire groove having a third groove bottom surface, wherein the third wire groove penetrates the second conductive layer to expose the protective layer;

[0036] The second conductive layer fills the second wire groove and is connected to the first conductive layer in the second wire groove, and the protective layer separates the perovskite layer and the second conductive layer; the orthographic projection of the bottom surface of the second groove on the first conductive layer and the orthographic projection of the bottom surface of the third groove on the first conductive layer are both located within the orthographic projection of the bottom surface of the first groove on the first conductive layer, and the orthographic projection of the bottom surface of the second groove on the first conductive layer does not overlap with the orthographic projection of the bottom surface of the third groove on the first conductive layer and is staggered.

[0037] According to a fourth aspect of the present invention, there is provided a method for preparing a solar cell module, comprising:

[0038] forming a first conductive layer;

[0039] forming a functional layer on one side of the first conductive layer;

[0040] Patterning the functional layer to form a first wire groove penetrating at least a portion of the functional layer, exposing the first conductive layer at the first wire groove;

[0041] forming a protective layer on a side of the functional layer away from the first conductive layer, and the first wire groove is at least filled with the protective layer;

[0042] At least patterning the protective layer to form a second wire groove that at least penetrates the protective layer, exposing the first conductive layer at the second wire groove, and the second wire groove is nested in the first wire groove;

[0043] forming a second conductive layer on a side of the protective layer away from the functional layer, wherein the second conductive layer fills the second wire groove and is electrically connected to the first conductive layer in the second wire groove;

[0044] The second conductive layer is patterned to form a third wire groove penetrating the second conductive layer, wherein the third wire groove is nested in the first wire groove and is located on one side of the second wire groove.

[0045] Optionally, the functional layer includes a first transmission layer, a light absorbing layer, and a second transmission layer stacked in sequence, and the first transmission layer is located on a side of the light absorbing layer close to the first conductive layer;

[0046] The forming of a functional layer on one side of the first conductive layer comprises:

[0047] forming the first transmission layer, the light absorption layer and the second transmission layer in sequence on one side of the first conductive layer;

[0048] The step of patterning the functional layer to form a first wiring trench penetrating at least a portion of the functional layer includes:

[0049] Patterning the second transmission layer, the light absorption layer, and the first transmission layer to form a first line groove penetrating the second transmission layer, the light absorption layer, and the first transmission layer;

[0050] The step of forming a protective layer on a side of the functional layer away from the first conductive layer, wherein the first wiring groove is at least filled with the protective layer, comprises:

[0051] forming a protective layer on a side of the second transmission layer away from the first conductive layer, and filling the first wire groove with the protective layer;

[0052] The step of at least patterning the protective layer to form a second wiring slot at least passing through the protective layer comprises:

[0053] The protection layer is patterned to form a second wiring groove penetrating the protection layer.

[0054] Optionally, the functional layer includes a first transmission layer, a light absorbing layer, and a second transmission layer stacked in sequence, and the first transmission layer is located on a side of the light absorbing layer close to the first conductive layer;

[0055] The forming of a functional layer on one side of the first conductive layer comprises:

[0056] forming the first transmission layer and the light absorption layer in sequence on one side of the first conductive layer;

[0057] The step of patterning the functional layer to form a first wiring trench penetrating at least a portion of the functional layer includes:

[0058] Patterning the light absorption layer and the first transmission layer to form a first line groove penetrating the light absorption layer and the first transmission layer;

[0059] After patterning the functional layer to form a first wire groove penetrating at least a portion of the functional layer and before forming a protective layer on a side of the functional layer away from the first conductive layer, the method further includes:

[0060] forming a second transmission layer on a side of the light absorbing layer away from the first conductive layer;

[0061] The step of forming a protective layer on a side of the functional layer away from the first conductive layer, wherein the first wiring groove is at least filled with the protective layer, comprises:

[0062] forming a protective layer on a side of the second transmission layer away from the first conductive layer, and the first wire groove is filled with the second transmission layer and the protective layer;

[0063] The step of at least patterning the protective layer to form a second wiring slot at least passing through the protective layer comprises:

[0064] The protection layer and the second transmission layer are patterned to form a second wiring groove penetrating the protection layer and the second transmission layer.

[0065] The technical solution of the embodiment of the present invention is to provide a protective layer between the functional layer and the second conductive layer. The first wire groove is filled with the protective layer, so that the second conductive layer and the functional layer are isolated at the side wall of the first wire groove by the protective layer. The second wire groove at least penetrates the protective layer to expose the first conductive layer, and is then filled with the second conductive layer. The second wire groove is nested in the first wire groove, so that the second conductive layer and the functional layer are isolated at the side wall of the second wire groove by the protective layer. The third wire groove penetrates the second conductive layer. In this embodiment, the third wire groove is nested in the first wire groove, and the first wire groove is filled with the protective layer. As a result, the second conductive layer and the functional layer are isolated at the side wall of the third wire groove by the protective layer, thereby preventing the molten area of ​​the second conductive layer formed on both sides of the third wire groove from contacting the functional layer along the side wall of the third wire groove during the etching process or after lamination packaging. In this embodiment, only one protective layer is used to isolate the second conductive layer at the first, second and third wire grooves from the functional layer at the same time, thereby avoiding ion diffusion between the functional layer and the second conductive layer, which may cause instability of the solar cell module. There is no need to form multiple protective layers, thereby reducing the cost of the solar cell module.

[0066] It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present invention, nor is it intended to limit the scope of the present invention. Other features of the present invention will become readily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0067] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0068] Figure 1 A schematic structural diagram of a solar cell assembly provided by an embodiment of the present invention;

[0069] Figure 2 A schematic structural diagram of another solar cell assembly provided by an embodiment of the present invention;

[0070] Figure 3 A schematic diagram of the marking positions of a group of wire troughs in a solar cell assembly provided by an embodiment of the present invention;

[0071] Figure 4 A schematic structural diagram of a perovskite battery assembly provided by an embodiment of the present invention;

[0072] Figure 5 A schematic structural diagram of another perovskite battery assembly provided by an embodiment of the present invention;

[0073] Figure 6 A flow chart of a method for preparing a solar cell module provided by an embodiment of the present invention;

[0074] Figure 7 A flow chart of another method for preparing a solar cell module provided by an embodiment of the present invention;

[0075] Figure 8 A flow chart of another method for preparing a solar cell module provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0076] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0077] It should be noted that the terms "first", "second", etc. in the description and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchanged where appropriate so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0078] Figure 1 A schematic diagram of the structure of a solar cell assembly provided by an embodiment of the present invention, referring to Figure 1 , the solar cell assembly comprises:

[0079] Along the first direction Y, a first conductive layer 10, a functional layer 11, a protective layer 12, and a second conductive layer 13 are sequentially stacked; and a plurality of wire slot groups 2, each wire slot group 2 comprising:

[0080] A first wire groove P1, which passes through the functional layer 11 to the first conductive layer 10, and is at least filled with the protective layer 12;

[0081] The second wire groove P2 is nested in the first wire groove P1, and the second wire groove P2 at least penetrates the protective layer 12 to the first conductive layer 10;

[0082] The third wire groove P3 is nested in the first wire groove P1 and passes through the second conductive layer 13 to the protective layer 12;

[0083] The second conductive layer 13 fills the second wire slots P2 and is electrically connected to the first conductive layer 10 in the second wire slots P2. In each wire slot group 2, the third wire slots P3 are located on the same side of the second wire slots P2.

[0084] Optionally, the solar cell assembly further includes a substrate 14, which is located on the side of the first conductive layer 10 away from the functional layer 11. The substrate 14 can be a glass substrate and plays a supporting role. The first conductive layer 10 and the second conductive layer 13 are made of conductive materials, such as metal materials, which are not specifically limited in this embodiment. One of the first conductive layer 10 and the second conductive layer 13 serves as the positive electrode of the solar cell assembly, and the other serves as the negative electrode. The third wire groove P3 passes through the second conductive layer 13, the protective layer 12, and the functional layer 11 to expose the first conductive layer 10. Multiple third wire grooves P3 divide the second conductive layer 13 into multiple independent modules to form multiple sub-cells 1. In the conventional scheme, during the etching process of the third wire groove P3, there is a certain probability that the melted second conductive layer 13 will short-circuit with the first conductive layer 10 along the side wall of the third wire groove P3. The short-circuit point formed is reflected in the electroluminescence, which will affect the performance of the solar cell assembly. In this embodiment, the third slot P3 penetrates the second conductive layer 13, exposing the protective layer 12 at the bottom of the third slot P3. The bottom of the third slot P3 is covered with the protective layer 12 to isolate the first conductive layer 10 from the second conductive layer 13, avoid short circuits, and ensure the stability of the performance of the solar cell module. In conventional solutions, the third slot P3 penetrates each film layer except the first conductive layer 10 to divide the solar cell module into sub-cells connected in series. If a large number of film layers are etched, the power density and single pulse density used in the etching process are relatively large. After laser etching, micron-scale craters will form on both sides of the third slot P3, affecting the coverage of subsequent film layers. In this embodiment, the third slot P3 is nested in the first slot P1. When forming the third slot P3, the number of film layers etched is small, the process control difficulty is low, and edge craters formed by etching are avoided. The third wire groove P3 is located inside the first wire groove P1 , so that during the lamination and packaging process, external force acts on the first wire groove P1 , thereby avoiding secondary damage to the edge of the third wire groove P3 caused by the external force during the lamination and packaging process.

[0085] The second wiring slot P2 is located within the first wiring slot P1. It penetrates the protective layer 12 and the functional layer 11, exposing the first conductive layer 10. This allows contact between the first conductive layer 10 and the second conductive layer 13 within the second wiring slot P2, forming a current path and connecting adjacent sub-cells 1 in series. After the first wiring slot P1 exposes the first conductive layer 10, it is filled with the protective layer 12. At the first wiring slot P1, the second conductive layer 13 and the functional layer 11 are isolated by the protective layer 12, preventing ion diffusion and degradation reactions.

[0086] The technical solution of the embodiment of the present invention is to provide a protective layer between the functional layer and the second conductive layer. The first wire groove is filled with the protective layer, so that the second conductive layer and the functional layer are isolated at the side wall of the first wire groove by the protective layer. The second wire groove at least penetrates the protective layer to expose the first conductive layer, and is then filled with the second conductive layer. The second wire groove is nested in the first wire groove, so that the second conductive layer and the functional layer are isolated at the side wall of the second wire groove by the protective layer. The third wire groove penetrates the second conductive layer. In this embodiment, the third wire groove is nested in the first wire groove, and the first wire groove is filled with the protective layer. As a result, the second conductive layer and the functional layer are isolated at the side wall of the third wire groove by the protective layer, thereby preventing the molten area of ​​the second conductive layer formed on both sides of the third wire groove from contacting the functional layer along the side wall of the third wire groove during the etching process or after lamination packaging. In this embodiment, only one protective layer is used to isolate the second conductive layer at the first, second and third wire grooves from the functional layer at the same time, thereby avoiding ion diffusion between the functional layer and the second conductive layer, which may cause instability of the solar cell module. There is no need to form multiple protective layers, thereby reducing the cost of the solar cell module.

[0087] Continue to refer Figure 1 Optionally, the functional layer 11 includes a first transport layer 111, a light absorbing layer 112, and a second transport layer 113 stacked in sequence along the first direction Y. The first transport layer 111 is located on the side of the light absorbing layer 112 close to the first conductive layer 10. The first transport layer 111 is an electron transport layer and the second transport layer 113 is a hole transport layer. Alternatively, the first transport layer 111 is a hole transport layer and the second transport layer 113 is an electron transport layer. The light absorbing layer 112 can be a film layer capable of generating charge transfer, which is not specifically limited in this embodiment.

[0088] In an optional embodiment, as Figure 1 As shown, the first slot P1 penetrates the first transmission layer 111, the light absorption layer 112, and the second transmission layer 113, and is filled with the protective layer 12. The second slot P2 penetrates the protective layer 12 to expose the first conductive layer 10, and is filled with the second conductive layer 13.

[0089] In this embodiment, after the second transmission layer 113 is formed, the first linear groove P1 can be formed by etching or the like, so that when the second linear groove P2 is subsequently formed, only one layer of the protective layer 12 needs to be etched. The power density and single pulse density required for etching can be relatively low, thereby ensuring that the opening of the etched second linear groove P2 is smoother.

[0090] In this embodiment, because the first trench P1 penetrates the first transmission layer 111, the light absorbing layer 112, and the second transmission layer 113, and the second trench P2 is located within the first trench P1, the second trench P2 only needs to penetrate the protective layer 12 to expose the first conductive layer 10. In other words, the second trench P2 ultimately penetrates the protective layer 12, the second transmission layer 113, the light absorbing layer 112, and the first transmission layer 111 to expose the first conductive layer 10.

[0091] In another optional embodiment, as Figure 2 As shown, Figure 2 A schematic diagram of the structure of another solar cell assembly provided by an embodiment of the present invention, referring to Figure 2 The functional layer 11 includes a first transmission layer 111, a light absorbing layer 112, and a second transmission layer 113 stacked in sequence along the first direction Y. The first transmission layer 111 is located on the side of the light absorbing layer 112 close to the first conductive layer 10. The first linear groove P1 passes through the first transmission layer 111 and the light absorbing layer 112 and is filled with the protective layer 12 and the second transmission layer 113.

[0092] The second wire groove P2 penetrates the protection layer 12 and the second transmission layer 113 to expose the first conductive layer 10 , and is filled with the second conductive layer 13 .

[0093] In this embodiment, after forming the light absorption layer 112, first slots P1 can be formed by etching. This reduces the number of film layers required to etch first slots P1, reduces the power density and single-pulse density required for etching, and ensures a smooth opening of the etched first slots P1. Because first slots P1 penetrate the first transmission layer 111 and the light absorption layer 112, and second slots P2 are located within first slots P1, second slots P2 only need to penetrate the protective layer 12 and the second transmission layer 113 to expose the first conductive layer 10. Ultimately, second slots P2 penetrate the protective layer 12, the second transmission layer 113, the light absorption layer 112, and the first transmission layer 111 to expose the first conductive layer 10. Second slots P2 are filled with the second transmission layer 113 and the protective layer 12.

[0094] refer to Figure 1 or Figure 2 For any wire slot group 2, the orthographic projection of the second wire slot P2 on the first conductive layer 10 is located within the orthographic projection of the first wire slot P1 on the first conductive layer 10, and any edge of the second wire slot P2 does not overlap with any edge of the first wire slot P1.

[0095] For any slot group 2 , the orthographic projection of the third slot P3 on the first conductive layer 10 is within the orthographic projection of the first slot P1 on the first conductive layer 10 , and any edge of the third slot P3 does not overlap with any edge of the first slot P1 .

[0096] The sidewalls of both the second and third trenches P2, P3 do not overlap with the sidewalls of the first trench P1. This allows for a certain spacing between the second trench P2 and the first trench P1, and a certain spacing between the third trench P3 and the first trench P1, along the second direction X. The second direction X intersects with the first direction Y and may further be perpendicular. The spacing between the second trench P2 and the first trench P1 prevents etching precision issues during the formation of the second trench P2 or the third trench P3, which could result in the protective layer 12 or the second transmission layer 113 between the first and second trenches P1 being etched away, thereby causing the second conductive layer 13 to contact the light absorbing layer 112 on the sidewalls of the second trench P2. The reason for the spacing between the third trench P3 and the first trench P1 is similar and will not be further elaborated.

[0097] Figure 3 A schematic diagram of the marking positions of a group of wire slots in a solar cell assembly provided by an embodiment of the present invention, with reference to Figure 1 and Figure 3 Optionally, in each wire slot group 2, a side P21 of the second wire slot P2 away from the third wire slot P3 is greater than or equal to 5 microns and less than or equal to 10 microns from a side P11 of the first wire slot P1 away from the third wire slot P3.

[0098] In each wire slot group 2 , a side P31 of the third wire slot P3 away from the second wire slot P2 is greater than or equal to 5 micrometers and less than or equal to 10 micrometers from a side P12 of the first wire slot P1 away from the second wire slot P2 .

[0099] In this embodiment, a first slot P1 extending through the first transmission layer 111, the light absorption layer 112, and the second transmission layer 113 is used as an example. The cross-sectional shapes of the first slot P1, the second slot P2, and the third slot P3 in this embodiment are merely illustrative. The cross-sectional shapes of the first slot P1, the second slot P2, and the third slot P3 can be rectangular. For any slot, the width is constant along the direction from the second conductive layer 13 to the first conductive layer 10, i.e., along the first direction Y. In other alternative embodiments, the cross-sectional shape of each slot is trapezoidal, meaning that the width of each slot gradually decreases along the direction from the second conductive layer 13 to the first conductive layer 10. A side P21 of the second slot P2 away from the third slot P3 is greater than or equal to 5 microns and less than or equal to 10 microns from a side P11 of the first slot P1 away from the third slot P3. The minimum distance between the side P21 of the second slot P2 away from the third slot P3 and the side P11 of the first slot P1 away from the third slot P3 is greater than or equal to 5 microns and less than or equal to 10 microns. A side P31 of the third slot P3 away from the second slot P2 is greater than or equal to 5 microns and less than or equal to 10 microns from a side P12 of the first slot P1 away from the second slot P2. The minimum distance between the side P31 of the third slot P3 away from the second slot P2 and the side P12 of the first slot P1 away from the second slot P2 is greater than or equal to 5 microns and less than or equal to 10 microns.

[0100] The distance between the side P21 of the second wire trough P2 away from the third wire trough P3 and the side P11 of the first wire trough P1 away from the third wire trough P3 is recorded as the first distance d1. Figure 3 The first distance d1 is greater than or equal to 5 microns and less than or equal to 10 microns. If the first distance d1 is too small, the protective layer 12 located on the sidewalls of the first trench P1 may be etched away during the etching process, resulting in a loss of insulation between the second conductive layer 13 and the light-absorbing layer 112 on the sidewalls of the second trench P2. If the first distance d1 is too large, the width of the first trench P1 must be increased while the widths of the second and third trenches P2 and P3 remain constant, resulting in a reduction in the area of ​​the active area U1 in the solar cell module and a decrease in the amount of power generated by each sub-cell 1. Therefore, it is necessary to set the first distance d1 within an appropriate range.

[0101] The distance between the side P31 of the third wire slot P3 away from the second wire slot P2 and the side P12 of the first wire slot P1 away from the second wire slot P2 is recorded as the second distance d2. Figure 3The second distance d2 is greater than or equal to 5 microns and less than or equal to 10 microns. If the second distance d2 is too small, the protective layer 12 located on the sidewalls of the first trench P1 may be etched away during the etching process, resulting in a loss of insulation between the second conductive layer 13 and the light-absorbing layer 112 at the sidewalls of the second trench P2. If the second distance d2 is too large, the width of the first trench P1 must be increased while the widths of the second and third trenches P2, P3, remain constant along the second direction X. This reduces the area of ​​the active area U1 in the solar cell module and reduces the amount of power generated by each sub-cell 1. Therefore, the second distance d2 needs to be set within an appropriate range.

[0102] In each slot group 2, along the second direction X, the distance d3 between the second slot P2 and the third slot P3 is greater than or equal to 5 microns and less than or equal to 10 microns. For a trapezoidal slot cross-section, the distance d3 between the second slot P2 and the third slot P3 is greater than or equal to 5 microns and less than or equal to 10 microns. This means that the minimum distance between the second slot P2 and the third slot P3 along the second direction X is greater than or equal to 5 microns and less than or equal to 10 microns. If the distance between the second slot P2 and the third slot P3 is too small, it can easily lead to the second slot P2 and the third slot P3 being connected during the slot formation process, resulting in the inability to disconnect adjacent sub-cells 1 at the third slot P3 and the inability to divide the solar cell assembly into individual sub-cells. If the distance between the second slot P2 and the third slot P3 is too large, the area of ​​the effective area U1 is reduced when the second slot P2 and the third slot P3 meet the required width. Therefore, the distance d3 between the second wire groove P2 and the third wire groove P3 needs to be set within an appropriate range.

[0103] refer to Figure 1 and Figure 3 Optionally, the width d4 of the second wire groove P2 is greater than or equal to 20 microns and less than or equal to 60 microns. Furthermore, if the cross-sectional shape of the second wire groove P2 is a trapezoid, the width d4 of the second wire groove P2 can be understood as the minimum width. If the width d4 of the second wire groove P2 is too small, the resistance between the first conductive layer 10 and the second conductive layer 13 in the second wire groove P2 is large, which is not conducive to the flow of charge, and the series stability between the sub-batteries 1 is poor. If the width of the second wire groove P2 is too large, the area of ​​the effective area U1 will be reduced. Therefore, the width of the second wire groove P2 needs to be set within a reasonable range. The width of the second wire groove P2 can be understood as the length of the second wire groove P2 along the second direction X, where the second direction X is the arrangement direction of the second wire groove P2 and the third wire groove P3 in the same wire groove group 2.

[0104] refer to Figure 1 and Figure 3The width d5 ​​of the third slot P3 is greater than or equal to 15 microns and less than or equal to 25 microns. Furthermore, if the cross-sectional shape of the third slot P3 is trapezoidal, the width d5 ​​of the third slot P3 can be understood as the minimum width. The minimum width of the third slot P3 is the minimum width achievable by the etching equipment. The width of the third slot P3 cannot be too large, as this will compress the area of ​​the effective area U1, thereby reducing the area of ​​the effective area U1. Therefore, the width of the third slot P3 must be set within a reasonable range. The width of the third slot P3 can be understood as the length of the third slot P3 along the second direction X.

[0105] refer to Figure 1 or Figure 2 Optionally, each wire slot group 2 further includes a fourth wire slot P4. In each wire slot group 2, the third wire slot P3 is located on the same side of the second wire slot P2. The fourth wire slot P4, the second wire slot P2 and the third wire slot P3 are arranged along the second direction X, and along the second direction X, in the same wire slot group 2, the second wire slot P2 is located between the third wire slot P3 and the fourth wire slot P4.

[0106] The second direction X intersects with the first direction Y, and can specifically be perpendicular. The first direction Y is the stacking direction between the various film layers in the solar cell module, such as the stacking direction between the first transmission layer, the light absorption layer, and the second transmission layer. That is, the first direction Y is the thickness direction of the solar cell module. In each group of wire slots, the fourth wire slot P4, the second wire slot P2, and the third wire slot P3 maintain the same arrangement. Along the second direction X, the fourth wire slot P4, the second wire slot P2, and the third wire slot P3 are arranged in sequence, so that each sub-cell 1 can be connected in series in sequence. In an optional embodiment, the fourth wire slot P4 passes through the first conductive layer 10 and is filled with the first transmission layer 111 and the light absorption layer 112. That is, after the first conductive layer 10 is formed, the first conductive layer 10 is etched to form the fourth wire slot P4. In other embodiments, a fourth slot P4 may extend through the first conductive layer 10 and the first transmission layer 111 and be filled with the light absorbing layer 112. That is, after forming the first transmission layer 111, the first transmission layer 111 and the first conductive layer 10 are etched to form the fourth slot P4. The fourth slot P4 is used to divide the first conductive layer 10 into multiple independent modules, which, in conjunction with the third slot P3, form multiple sub-cells 1. For example, taking the first transport layer 111 as an electron transport layer and the second transport layer 113 as a hole transport layer as an example, the holes in the light absorption layer 112 are transported to the second conductive layer 13 via the second transport layer 113 and the protective layer 12, and the electrons in the light absorption layer 112 are transported to the first conductive layer 10 via the first transport layer 111. Therefore, for each sub-battery 1, the first conductive layer 10 is the negative electrode and the second conductive layer 13 is the positive electrode. Adjacent sub-batteries 1 are connected through the third wire slot P3. Specifically, the second conductive layer 13 of the upper sub-battery 1, that is, the positive electrode, is connected to the first conductive layer 10 of the next sub-battery 1, that is, the negative electrode, through the third wire slot P3, thereby realizing the series connection between the sub-batteries 1.

[0107] Optionally, the width of the fourth slot P4 is greater than or equal to 15 microns and less than or equal to 25 microns. When the cross-sectional shape of the fourth slot P4 is trapezoidal, the width of the fourth slot P4 can be the minimum width. The minimum width of the fourth slot P4 is the minimum width achievable by the etching equipment. The width of the fourth slot P4 cannot be too large, as this will compress the area of ​​the effective area U1, thereby reducing the area of ​​the effective area U1. Therefore, the width of the fourth slot P4 must be set within a reasonable range. The width of the fourth slot P4 can be understood as the length of the fourth slot P4 along the second direction X.

[0108] The embodiment of the present invention further provides a perovskite battery assembly, Figure 4 A schematic diagram of the structure of a perovskite battery assembly provided by an embodiment of the present invention, referring to Figure 4The perovskite battery assembly includes: a substrate 14, a first conductive layer 10, a perovskite layer 15, a protective layer 12, and a second conductive layer 13 stacked in sequence along a first direction Y; and a plurality of wire slot groups 2, each wire slot group 2 including:

[0109] A first wire groove P1, which passes through the perovskite layer 15 to the first conductive layer 10, and is at least filled with the protective layer 12;

[0110] A second wire groove P2 is formed in the first wire groove P1. The second wire groove P2 at least penetrates the protective layer 12 to expose the first conductive layer 10.

[0111] A third wire groove P3 is formed in the first wire groove P1 , and the third wire groove P3 penetrates the second conductive layer 13 to expose the protective layer 12 ;

[0112] The second conductive layer 13 fills the second wire groove P2 and is electrically connected to the first conductive layer 10 in the second wire groove P2 . The protective layer 12 separates the perovskite layer 15 and the second conductive layer 13 .

[0113] In this embodiment, the first wire groove P1 is filled with the protective layer 12, so that the protective layer 12 filled in the first wire groove P1 isolates the perovskite layer 15 from the second conductive layer 13, thereby preventing the second conductive layer 13 and the perovskite layer 15 from contacting each other, causing ion diffusion and resulting in instability of the perovskite battery component. In this embodiment, there is no need to form multiple protective layers, thereby reducing the cost of the perovskite battery component.

[0114] Continue to refer Figure 4 Optionally, the perovskite battery assembly further includes a first transmission layer 111 and a second transmission layer 113 , wherein the first transmission layer 111 is located between the first conductive layer 10 and the perovskite layer 15 , and the second transmission layer 113 is located between the perovskite layer 15 and the protective layer 12 .

[0115] The first line groove P1 passes through the first transmission layer 111, the perovskite layer 15 and the second transmission layer 113, and is filled with the protective layer 12. The second line groove P2 passes through the protective layer 12 to expose the first conductive layer 10. Figure 4 Alternatively, the first groove P1 penetrates the first transmission layer 111 and the perovskite layer 15 and is filled with the protective layer 12 and the second transmission layer 113 , and the second groove P2 penetrates the protective layer 12 and the second transmission layer 113 to expose the first conductive layer 10 .

[0116] Continue to refer Figure 4 , for any wire trough group 2, any edge of the second wire trough P2 does not overlap with any edge of the first wire trough P1;

[0117] For any wire slot group 2 , any edge of the third wire slot P3 does not overlap with any edge of the first wire slot P1 .

[0118] In each wire slot group 2, the distance between the second wire slot P2 and the third wire slot P3 is greater than or equal to 5 microns and less than or equal to 10 microns;

[0119] A side P21 of the second slot P2 away from the third slot P3 is greater than or equal to 5 micrometers and less than or equal to 10 micrometers from a side P11 of the first slot P1 away from the third slot P3;

[0120] A side P31 of the third slot P3 away from the second slot P2 is greater than or equal to 5 micrometers and less than or equal to 10 micrometers away from a side P12 of the first slot P1 away from the second slot P2 .

[0121] Continue to refer Figure 4 Optionally, each wire slot group 2 further includes a fourth wire slot P4. In each wire slot group 2, the third wire slot P3 is located on the same side of the second wire slot P2. The fourth wire slot P4, the second wire slot P2, and the third wire slot P3 are arranged along the second direction X. In the same wire slot group 2, along the second direction X, the second wire slot P2 is located between the third wire slot P3 and the fourth wire slot P4. The second direction X intersects with the first direction Y.

[0122] The fourth slot P4 passes through the first conductive layer 10 and is filled with the first transmission layer 111 and the perovskite layer 15 . Alternatively, the fourth slot P4 passes through the first conductive layer 10 and the first transmission layer 111 and is filled with the perovskite layer 15 .

[0123] Continue to refer Figure 4 , the width of the second slot P2 is greater than or equal to 20 microns and less than or equal to 60 microns:

[0124] The width of the third slot P3 is greater than or equal to 15 microns and less than or equal to 25 microns;

[0125] The width of the fourth trench P4 is greater than or equal to 15 micrometers and less than or equal to 25 micrometers.

[0126] Figure 4 The perovskite cell components shown are Figure 1 or Figure 2 The structure is similar and will not be repeated here.

[0127] The embodiment of the present invention also provides another perovskite battery component, Figure 5 A schematic diagram of the structure of another perovskite battery assembly provided by an embodiment of the present invention, referring to Figure 5 The perovskite battery assembly includes: a substrate 14, a first conductive layer 10, a perovskite layer 15, a protective layer 12, and a second conductive layer 13 stacked in sequence in a first direction Y; and a plurality of wire slot groups, each wire slot group 2 including:

[0128] A first wire groove P1 having a first groove bottom surface P111 , the first wire groove P1 passes through the perovskite layer 15 to the first conductive layer 10 , and the first wire groove P1 is at least filled with the protective layer 12 ;

[0129] A second wire groove P2 having a second groove bottom surface P211 , wherein the second wire groove P2 at least penetrates the protective layer 12 to expose the first conductive layer 10 ;

[0130] a third wire groove P3 having a third groove bottom surface P311 , and the third wire groove P3 penetrates the second conductive layer 13 to expose the protective layer 12 ;

[0131] Among them, the second conductive layer 13 fills the second wire groove P2 and is connected to the first conductive layer 10 in the second wire groove P2, and the protective layer 12 separates the perovskite layer 15 and the second conductive layer 13; the orthographic projection of the second groove bottom surface P211 on the first conductive layer 10 and the orthographic projection of the third groove bottom surface P311 on the first conductive layer 10 are both located within the orthographic projection of the first groove bottom surface P111 on the first conductive layer 10, and the orthographic projection of the second groove bottom surface P211 on the first conductive layer 10 and the orthographic projection of the third groove bottom surface P311 on the first conductive layer 10 do not overlap and are staggered.

[0132] The first trench bottom surface P111 is the surface where the first trench P1 contacts the first conductive layer 10, the second trench bottom surface P211 is the surface where the second trench P2 contacts the first conductive layer 10, and the third trench bottom surface P311 is the surface where the third trench P3 contacts the protective layer 12. The orthographic projections of the second trench bottom surface P211 and the third trench bottom surface P311 on the first conductive layer 10 are both located within the orthographic projection of the first trench bottom surface P111 on the first conductive layer 10. The orthographic projections of the second trench bottom surface P211 and the third trench bottom surface P311 on the first conductive layer 10 do not overlap and are staggered, ensuring that the second trench P2 and the third trench P3 do not overlap within the first trench P1. This allows the second trench P2 to connect the first conductive layer 10 and the second conductive layer 13, thereby achieving series connection between the sub-cells 1. Meanwhile, the third trench P3 can separate the battery assembly into individual sub-cells 1.

[0133] The first wire groove is filled with a protective layer, so that the second conductive layer and the perovskite layer are isolated from each other at the sidewalls of the first wire groove by the protective layer. The second wire groove at least penetrates the protective layer to expose the first conductive layer, and is then filled with the second conductive layer, and the second wire groove is nested in the first wire groove, so that the second conductive layer and the perovskite layer are isolated from each other at the sidewalls of the second wire groove by the protective layer. The third wire groove penetrates the second conductive layer. In this embodiment, the third wire groove is nested in the first wire groove, and the first wire groove is filled with a protective layer, so that the second conductive layer and the perovskite layer are isolated from each other at the sidewalls of the third wire groove by the protective layer, thereby preventing the molten area of ​​the second conductive layer formed on both sides of the third wire groove from contacting the perovskite layer along the sidewalls of the third wire groove during the etching process or after lamination and packaging. In this embodiment, only one protective layer is used to isolate the second conductive layer at the first, second and third wire grooves from the perovskite layer at the same time, thereby avoiding ion diffusion between the perovskite layer and the second conductive layer, which may cause instability of the perovskite battery component. There is no need to form multiple protective layers, thereby reducing the cost of the perovskite battery component.

[0134] Continue to refer Figure 5 Optionally, the perovskite battery assembly further includes a first transmission layer 111 and a second transmission layer 113 , wherein the first transmission layer 111 is located between the first conductive layer 10 and the perovskite layer 15 , and the second transmission layer 113 is located between the perovskite layer 15 and the protective layer 12 .

[0135] The first line groove P1 passes through the first transmission layer 111, the perovskite layer 15 and the second transmission layer 113, and is filled with the protective layer 12. The second line groove P2 passes through the protective layer 12 to expose the first conductive layer 10. Figure 5 Alternatively, the first groove P1 penetrates the first transmission layer 111 and the perovskite layer 15 and is filled with the protective layer 12 and the second transmission layer 113 , and the second groove P2 penetrates the protective layer 12 and the second transmission layer 113 to expose the first conductive layer 10 .

[0136] Continue to refer Figure 5 , for any wire trough group 2, any edge of the second wire trough P2 does not overlap with any edge of the first wire trough P1;

[0137] For any wire slot group 2 , any edge of the third wire slot P3 does not overlap with any edge of the first wire slot P1 .

[0138] In each wire slot group 2, the distance between the second wire slot P2 and the third wire slot P3 is greater than or equal to 5 microns and less than or equal to 10 microns;

[0139] A side P21 of the second slot P2 away from the third slot P3 is greater than or equal to 5 micrometers and less than or equal to 10 micrometers from a side P11 of the first slot P1 away from the third slot P3;

[0140] A side P31 of the third slot P3 away from the second slot P2 is greater than or equal to 5 micrometers and less than or equal to 10 micrometers away from a side P12 of the first slot P1 away from the second slot P2 .

[0141] Continue to refer Figure 5 Optionally, each wire slot group 2 further includes a fourth wire slot P4. In each wire slot group 2, the third wire slot P3 is located on the same side of the second wire slot P2. The fourth wire slot P4, the second wire slot P2, and the third wire slot P3 are arranged along the second direction X. In the same wire slot group 2, along the second direction X, the second wire slot P2 is located between the third wire slot P3 and the fourth wire slot P4. The second direction X intersects with the first direction Y.

[0142] The fourth slot P4 passes through the first conductive layer 10 and is filled with the first transmission layer 111 and the perovskite layer 15 . Alternatively, the fourth slot P4 passes through the first conductive layer 10 and the first transmission layer 111 and is filled with the perovskite layer 15 .

[0143] Continue to refer Figure 5 , the width of the second slot P2 is greater than or equal to 20 microns and less than or equal to 60 microns:

[0144] The width of the third slot P3 is greater than or equal to 15 microns and less than or equal to 25 microns;

[0145] The width of the fourth trench P4 is greater than or equal to 15 micrometers and less than or equal to 25 micrometers.

[0146] Figure 5 The perovskite cell components shown are Figure 1 or Figure 2 The structure is similar and will not be repeated here.

[0147] The embodiment of the present invention also provides a method for preparing a solar cell. Figure 6 A flow chart of a method for preparing a solar cell module according to an embodiment of the present invention is provided. Figure 1 and Figure 6 ,or Figure 2 and Figure 6 , the preparation method comprises:

[0148] S110: forming a first conductive layer.

[0149] Before S110 , the process further includes providing a substrate 14 , and forming a first conductive layer 10 on one side of the substrate 14 by evaporating or depositing a first conductive material.

[0150] S120: forming a functional layer on one side of the first conductive layer.

[0151] After the first conductive layer 10 is formed, a light absorbing material is evaporated or deposited on a side of the first conductive layer 10 away from the substrate 14 to form a functional layer 11 .

[0152] S130: Patterning the functional layer to form a first wire groove penetrating at least a portion of the functional layer, exposing the first conductive layer at the first wire groove. The solar cell assembly includes a plurality of wire groove groups 2, each of which includes a first wire groove P1 and a second wire groove P2 and a third wire groove P3 described below.

[0153] When patterning the functional layer, one of the methods including but not limited to mechanical scratching, laser scratching, chemical etching, and masking can be used. In this embodiment, laser scratching is selected. The choice of laser light source includes but is not limited to one of the light sources that meet the absorption wavelength of perovskite, such as green light 532nm and ultraviolet 355nm. In this embodiment, a green light 532nm light source is used for processing. The light output method can be selected from the top or bottom. In this embodiment, the top light is used. By adjusting the collimator of the optical system, selecting a suitable focusing lens, and setting an appropriate focus, the scratching width of the first line groove P1 is controlled to be 100 microns in this embodiment. After etching at least part of the functional layer, the first conductive layer 10 is exposed at the bottom of the first line groove P1.

[0154] S140: forming a protective layer on a side of the functional layer away from the first conductive layer, and the first wire groove is at least filled with the protective layer.

[0155] The material of the protective layer includes but is not limited to Al2O3, SiO2, PCBM, TiO2, SnO2, ZnO, Nb2O5, C60, Spiro-OMeTAD, CuGaO2, CuSCN, BCP, P3HT, PEDOT:PSS and various modification and passivation materials, or a combination of several thereof. In this embodiment, tin oxide is used as the material of the protective layer 12. The method of making tin oxide includes but is not limited to ALD, PVD, evaporation, spin coating, spray coating, scraping, slit coating and other processes. The protective layer 12 not only acts as a barrier layer to isolate the second conductive layer 13 and the functional layer from mutual diffusion and degradation, but also acts as an interface modification layer to modify the interface defects of the transmission layer, which is beneficial to the transmission of electrons and can play the role of modifying the interface to improve the conversion efficiency.

[0156] S150: At least patterning the protective layer to form a second wire groove that at least penetrates the protective layer, exposing the first conductive layer at the second wire groove. The second wire groove is nested in the first wire groove.

[0157] When patterning the protective layer, the protective layer within the first linear groove can be patterned using methods including, but not limited to, mechanical scribing, laser scribing, chemical etching, and masking. Laser scribing was chosen in this example. The laser light source can include, but is not limited to, 532nm green light, 355nm ultraviolet light, or other sources that match the absorption wavelength of the protective layer material. In this example, a 532nm green light source was used for processing. The focused spot mode can use Gaussian light or a flat-top light (homogenized spot). The spot shape can be a conventional circle or a shaped spot, including, but not limited to, a square or rectangle. In this example, a circular flat-top spot is used. The light output method can be top or bottom output. In this example, top output is used. By adjusting the beam expander of the optical system, selecting a suitable focusing lens, and setting an appropriate focus, the width of the second linear groove P2 is controlled to 50 microns in this example. The second groove P2 was scribed 10 microns from the edge of the first groove P1 near the second groove P2, leaving space for the third groove P3. A single laser beam with a power of 0.5 W to 1 W and a repetition rate of 200 kHz to 1000 kHz was used, with the focus set to positive. After the second groove P2 was formed, the first conductive layer 10 was exposed at the bottom of the second groove P2.

[0158] S160: A second conductive layer is formed on the side of the protective layer away from the functional layer. The second conductive layer 13 fills the second slot P2 and is electrically connected to the first conductive layer 10 in the second slot P2. When preparing the second conductive layer 13, conventional methods for manufacturing the second conductive layer are used, including but not limited to PVD, evaporation, RPD, screen printing, ALD, etc. The material of the second conductive layer 13 includes but is not limited to metals or metal conductive oxides such as Cu, Ag, Au, ITO, IWO, FTO, IZO, ICO, carbon paste, etc., or a combination of multiple thereof. The second conductive layer 13 contacts the first conductive layer 10 at the second slot P2, thereby connecting the multiple sub-cells 1 in series. A protective layer 12 is formed between the sidewalls of the second slot P2 and the sidewalls of the first slot P1, so that the second conductive layer 13 and the functional layer 11 are isolated by the protective layer to prevent ion diffusion and degradation reactions.

[0159] S170: Patterning the second conductive layer to form a third wire groove penetrating the second conductive layer, wherein the third wire groove is nested in the first wire groove and is located on one side of the second wire groove.

[0160] When patterning the second conductive layer 13, the second conductive layer 13 in the first line groove P1 can be patterned by one of the methods including but not limited to mechanical scribing, laser etching, chemical etching, masking, etc. The laser scribing scheme is selected in this embodiment. The laser light source includes Gaussian light or flat top light (homogenized light spot). The light spot shape can be a conventional circle including but not limited to green light 532nm, ultraviolet 355nm, etc., which are in line with the absorption wavelength of the material of the second conductive layer and the material of the protective layer. This embodiment uses an ultraviolet 355nm light source for processing. The focused light spot mode can be adopted, or it can be a shaped light spot after shaping, including but not limited to square and rectangular. This embodiment adopts a circular flat top light spot. The light output mode can be selected to be top light output or bottom light output. In this embodiment, top light output is adopted. Using visual recognition, a third slot P3 is scratched on the side of the second slot P2, 10 microns from the second slot P2 on the side closest to the third slot P3. The laser power is 0.2 W to 0.5 W per beam, the frequency is 400 kHz to 4000 kHz, the focus is in positive focus mode, and the scratching speed is 400 mm / s to 1200 mm / s. The third slot P3 separates the second conductive layer 13 into independent modules to form multiple sub-cells 1. A protective layer is placed between the sidewall of the third slot P3 on the side closest to the first slot P1 and the sidewall of the first slot P1 on the side closest to the third slot P3 to prevent ion diffusion or degradation reactions between the second conductive layer 13 and the functional layer 11.

[0161] The technical solution of the embodiment of the present invention is to form a protective layer between the second transmission layer and the second conductive layer, and the protective layer is formed after the first wire groove is formed, so that the first wire groove is filled with the protective layer, thereby isolating the second conductive layer from the functional layer at the sidewall of the first wire groove by the protective layer. After the protective layer is formed, the protective layer in the first wire groove is patterned to form a second wire groove, and then the second wire groove is filled with the second conductive layer, and the second wire groove is nested in the first wire groove, so that the second conductive layer and the functional layer are isolated from each other at the sidewall of the second wire groove by the protective layer. After the second conductive layer is formed, the second conductive layer in the first wire groove is etched to form a third wire groove, and the third wire groove is nested in the first wire groove, and the first wire groove is filled with the protective layer, thereby isolating the second conductive layer from the protective layer at the sidewall of the third wire groove, thereby preventing the molten area of ​​the second conductive layer formed on both sides of the third wire groove from contacting the functional layer along the sidewall of the third wire groove during the etching process or after lamination and packaging. In this embodiment, only one protective layer is used to isolate the second conductive layer at the first, second and third wire grooves from the functional layer at the same time, thereby avoiding ion diffusion between the functional layer and the second conductive layer, which may cause instability of the solar cell module. There is no need to form multiple protective layers, which reduces the cost of the solar cell module and simplifies the preparation process.

[0162] Figure 7 A flow chart of another method for preparing a solar cell module according to an embodiment of the present invention is provided. Figure 1 and Figure 7 , the method comprising:

[0163] S111: forming a first conductive layer.

[0164] S121: forming a first transmission layer, a light absorption layer, and a second transmission layer in sequence on one side of the first conductive layer.

[0165] After forming the first conductive layer 10, a first transport material is evaporated or deposited on the side of the first conductive layer 10 away from the substrate 14 to form a first transport layer 111. A light-absorbing material is evaporated or deposited on the side of the first transport layer 111 away from the first conductive layer 10 to form a light-absorbing layer 112. When the light-absorbing layer 112 is a perovskite layer, the light-absorbing material includes, but is not limited to, MAPbI3, MAPbBr3, FAPbI3, FAPbBr3, CsPbI3, CSPbBr3, FAMAPbI3, FACsPbI3, FAMACsPbI3, FAMACsPbIBr, etc., and the solvent is one or a combination of DMF, DMSO, NMP, γ-GBL, etc. The first transport layer 111 is either an electron transport layer or a hole transport layer. Examples of electron transport layers include, but are not limited to, PCBM, TiO2, SnO2, ZnO, Nb2O5, C60, etc., or a combination of several thereof. The hole transport layer includes but is not limited to one or a combination of NiO, Spiro-OMeTAD, CuGaO2, CuSCN, P3HT, PEDOT:PSS, SAM, etc.

[0166] One of the first transport layer 111 and the second transport layer 113 is an electron transport layer, and the other is a hole transport layer, which is not particularly limited.

[0167] S131: patterning the second transmission layer, the light absorption layer, and the first transmission layer to form a first line groove penetrating the second transmission layer, the light absorption layer, and the first transmission layer, exposing the first conductive layer at the first line groove.

[0168] S141: forming a protective layer on a side of the second transmission layer away from the first conductive layer, and filling the first wire groove with the protective layer.

[0169] S151: patterning the protective layer to form a second wire groove penetrating the protective layer, exposing the first conductive layer at the second wire groove, and the second wire groove is nested in the first wire groove.

[0170] S161: forming a second conductive layer on a side of the protective layer away from the light absorbing layer, wherein the second conductive layer fills the second wire groove and is electrically connected to the first conductive layer in the second wire groove.

[0171] S171: Patterning the second conductive layer to form a third wire groove penetrating the second conductive layer, wherein the third wire groove is nested in the first wire groove and is located on one side of the second wire groove.

[0172] In this embodiment, after forming the second transmission layer 113, the second transmission layer 113, the light absorption layer 112, and the first transmission layer 111 are patterned to form the first linear groove P1. Therefore, when subsequently forming the second linear groove P2, only one layer of the protective layer 12 needs to be etched. The power density and single pulse density required for etching can be relatively low, thereby ensuring that the opening of the etched second linear groove P2 is relatively smooth.

[0173] Optionally, after forming the first conductive layer and before forming the first transmission layer, the method further includes:

[0174] The first conductive layer 10 is patterned to form a fourth slot P4 penetrating the first conductive layer 10 , or, after forming the first transmission layer and before forming the light absorption layer, further comprising:

[0175] The first transmission layer 111 and the first conductive layer 10 are patterned to form a fourth trench P4 penetrating the first conductive layer 10 and the first transmission layer.

[0176] The fourth slots P4 can be formed after the first conductive layer or after the first transmission layer is formed, and this is not specifically limited in this embodiment. In each slot group 2, the third slots P3 are located on the same side of the first slots P1. The fourth slots P4, second slots P2, and third slots P3 are arranged along the second direction X. Within the same slot group along the second direction X, the second slot P2 is located between the third slot P3 and the fourth slot P4.

[0177] Figure 8 A flow chart of another method for preparing a solar cell module according to an embodiment of the present invention is provided. Figure 2 and Figure 8 , the method comprising:

[0178] S112: forming a first conductive layer.

[0179] S122: forming a first transmission layer and a light absorption layer in sequence on one side of the first conductive layer.

[0180] S132: patterning the light absorption layer and the first transmission layer to form a first line groove penetrating the light absorption layer and the first transmission layer, exposing the first conductive layer at the first line groove.

[0181] S142: forming a second transmission layer on a side of the light absorbing layer away from the first conductive layer.

[0182] S152: forming a protective layer on a side of the second transmission layer away from the first conductive layer, and the first wire groove is filled with the second transmission layer and the protective layer.

[0183] S162: Patterning the second transmission layer and the protection layer to form a second wire groove penetrating the protection layer and the second transmission layer, exposing the first conductive layer at the second wire groove, and the second wire groove is nested in the first wire groove.

[0184] S172: forming a second conductive layer on a side of the protective layer away from the light absorbing layer, wherein the second conductive layer fills the second wire groove and is electrically connected to the first conductive layer in the second wire groove.

[0185] S182: Patterning the second conductive layer to form a third wire groove penetrating the second conductive layer, wherein the third wire groove is nested in the first wire groove and is located on one side of the second wire groove.

[0186] In this embodiment, after forming the light absorption layer 112, the first slot P1 is formed by etching. This reduces the number of film layers required to form the first slot P1, allowing for lower etching power density and single-pulse density, ensuring a smooth opening of the first slot P1. Because the first slot P1 penetrates the first transmission layer 111 and the light absorption layer 112, and the second slot P2 is located within the first slot P1, the second slot P2 only needs to penetrate the protective layer 12 and the second transmission layer 113 to expose the first conductive layer 10. The second slot P2 is then filled with the second transmission layer 113 and the protective layer 12.

[0187] Similarly, after forming the first conductive layer and before forming the first transmission layer, the following steps are also included:

[0188] The first conductive layer 10 is patterned to form a fourth slot P4 penetrating the first conductive layer 10 , or, after forming the first transmission layer and before forming the light absorption layer, further comprising:

[0189] The first transmission layer 111 and the first conductive layer 10 are patterned to form a fourth trench P4 penetrating the first conductive layer 10 and the first transmission layer.

[0190] The fourth slots P4 can be formed after the first conductive layer or after the first transmission layer is formed, and this is not specifically limited in this embodiment. In each slot group 2, the third slots P3 are located on the same side of the second slots P2. The fourth slots P4, second slots P2, and third slots P3 are arranged along the second direction X. Within the same slot group along the second direction X, the second slot P2 is located between the third slot P3 and the fourth slot P4.

[0191] It should be understood that the various forms of the processes shown above can be used to reorder, add, or delete steps. For example, the steps described in the present invention can be performed in parallel, sequentially, or in a different order, as long as the desired results of the technical solution of the present invention can be achieved. This is not limited herein.

[0192] The above specific embodiments do not limit the scope of protection of the present invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions may be made based on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention are intended to be included within the scope of protection of the present invention.

Claims

1. A solar cell module, characterized in that: include: A first conductive layer, a functional layer, a protective layer and a second conductive layer are sequentially stacked along a first direction; as well as A plurality of wire trough groups, each of the wire trough groups comprising: a first wire groove, passing through the functional layer to the first conductive layer, wherein the first wire groove is at least filled with the protective layer; a second wire groove, nested in the first wire groove, wherein the second wire groove at least passes through the protective layer to the first conductive layer; a third wire groove, nested in the first wire groove, and the third wire groove passes through the second conductive layer to the protective layer; The second conductive layer fills the second wire groove and is connected to the first conductive layer in the second wire groove. In each of the wire groove groups, the third wire grooves are located on the same side of the second wire grooves.

2. The solar cell assembly according to claim 1, wherein The functional layer includes a first transmission layer, a light absorbing layer, and a second transmission layer stacked in sequence along the first direction, wherein the first transmission layer is located on a side of the light absorbing layer close to the first conductive layer; The first wire groove passes through the first transmission layer, the light absorption layer and the second transmission layer, and is filled with the protective layer; The second wire groove penetrates the protection layer to expose the first conductive layer.

3. The solar cell assembly according to claim 1, wherein The functional layer includes a first transmission layer, a light absorbing layer, and a second transmission layer stacked in sequence along the first direction, wherein the first transmission layer is located on a side of the light absorbing layer close to the first conductive layer; The first wire groove passes through the first transmission layer and the light absorption layer, and is filled with the protective layer and the second transmission layer; The second wire groove penetrates the protection layer and the second transmission layer to expose the first conductive layer.

4. The solar cell assembly according to claim 1, wherein For any of the wire trough groups, any edge of the second wire trough does not overlap with any edge of the first wire trough; For any of the wire trough groups, any edge of the third wire trough does not overlap with any edge of the first wire trough.

5. The solar cell assembly according to any one of claims 1 to 4, characterized in that: In each of the wire groove groups, the distance between the second wire groove and the third wire groove is greater than or equal to 5 microns and less than or equal to 10 microns; The distance between the side of the second wire groove away from the third wire groove and the side of the first wire groove away from the third wire groove is greater than or equal to 5 microns and less than or equal to 10 microns; The distance between the side of the third linear groove away from the second linear groove and the side of the first linear groove away from the second linear groove is greater than or equal to 5 micrometers and less than or equal to 10 micrometers.

6. The solar cell assembly according to claim 1, wherein Each of the wire trough groups further includes a fourth wire trough. In each of the wire trough groups, the third wire trough is located on the same side of the second wire trough. The fourth wire trough, the second wire trough, and the third wire trough are arranged along a second direction. In the same wire trough group, along the second direction, the second wire trough is located between the third wire trough and the fourth wire trough. The second direction intersects the first direction. The functional layer includes a first transmission layer, a light absorbing layer, and a second transmission layer stacked in sequence, wherein the first transmission layer is located on a side of the light absorbing layer close to the first conductive layer; The fourth linear groove passes through the first conductive layer and is filled with the first transmission layer and the light absorption layer; Alternatively, the fourth linear groove passes through the first conductive layer and the first transmission layer and is filled with the light absorbing layer.

7. The solar cell assembly according to claim 6, characterized in that The width of the second groove is greater than or equal to 20 microns and less than or equal to 60 microns: The width of the third groove is greater than or equal to 15 microns and less than or equal to 25 microns; The width of the fourth groove is greater than or equal to 15 micrometers and less than or equal to 25 micrometers.

8. A perovskite battery assembly, characterized in that: include: Along the first direction, a first conductive layer, a perovskite layer, a protective layer and a second conductive layer are sequentially stacked; as well as A plurality of wire trough groups, each of the wire trough groups comprising: a first wire groove, the first wire groove passing through the perovskite layer to the first conductive layer, the first wire groove being at least filled with the protective layer; a second wire groove formed in the first wire groove, wherein the second wire groove at least penetrates the protective layer to expose the first conductive layer; a third wire groove formed in the first wire groove, wherein the third wire groove penetrates the second conductive layer to expose the protective layer; The second conductive layer fills the second wire groove and is connected to the first conductive layer in the second wire groove, and the protective layer separates the perovskite layer and the second conductive layer.

9. A perovskite battery assembly, characterized in that: include: A first conductive layer, a perovskite layer, a protective layer, and a second conductive layer are sequentially stacked in a first direction; as well as A plurality of wire trough groups, each of the wire trough groups comprising: a first wire groove having a first groove bottom surface, the first wire groove extending through the perovskite layer to the first conductive layer, and the first wire groove being at least filled with the protective layer; a second wire groove having a second groove bottom surface, wherein the second wire groove at least penetrates the protective layer to expose the first conductive layer; a third wire groove having a third groove bottom surface, wherein the third wire groove penetrates the second conductive layer to expose the protective layer; The second conductive layer fills the second wire groove and is connected to the first conductive layer in the second wire groove, and the protective layer separates the perovskite layer and the second conductive layer; the orthographic projection of the bottom surface of the second groove on the first conductive layer and the orthographic projection of the bottom surface of the third groove on the first conductive layer are both located within the orthographic projection of the bottom surface of the first groove on the first conductive layer, and the orthographic projection of the bottom surface of the second groove on the first conductive layer does not overlap with the orthographic projection of the bottom surface of the third groove on the first conductive layer and is staggered.

10. A method for preparing a solar cell module, characterized in that: include: forming a first conductive layer; forming a functional layer on one side of the first conductive layer; Patterning the functional layer to form a first wire groove penetrating at least a portion of the functional layer, exposing the first conductive layer at the first wire groove; forming a protective layer on a side of the functional layer away from the first conductive layer, and the first wire groove is at least filled with the protective layer; At least patterning the protective layer to form a second wire groove that at least penetrates the protective layer, exposing the first conductive layer at the second wire groove, and the second wire groove is nested in the first wire groove; forming a second conductive layer on a side of the protective layer away from the functional layer, wherein the second conductive layer fills the second wire groove and is electrically connected to the first conductive layer in the second wire groove; The second conductive layer is patterned to form a third wire groove penetrating the second conductive layer, wherein the third wire groove is nested in the first wire groove and is located on one side of the second wire groove.

11. The method for preparing a solar cell assembly according to claim 10, wherein: The functional layer includes a first transmission layer, a light absorbing layer, and a second transmission layer stacked in sequence, wherein the first transmission layer is located on a side of the light absorbing layer close to the first conductive layer; The forming of a functional layer on one side of the first conductive layer comprises: forming the first transmission layer, the light absorption layer and the second transmission layer in sequence on one side of the first conductive layer; The step of patterning the functional layer to form a first wiring trench penetrating at least a portion of the functional layer includes: Patterning the second transmission layer, the light absorption layer, and the first transmission layer to form a first line groove penetrating the second transmission layer, the light absorption layer, and the first transmission layer; The step of forming a protective layer on a side of the functional layer away from the first conductive layer, wherein the first wiring groove is at least filled with the protective layer, comprises: forming a protective layer on a side of the second transmission layer away from the first conductive layer, and filling the first wire groove with the protective layer; The step of at least patterning the protective layer to form a second wiring slot at least passing through the protective layer comprises: The protection layer is patterned to form a second wiring groove penetrating the protection layer.

12. The method for preparing a solar cell assembly according to claim 10, wherein: The functional layer includes a first transmission layer, a light absorbing layer, and a second transmission layer stacked in sequence, wherein the first transmission layer is located on a side of the light absorbing layer close to the first conductive layer; The forming of a functional layer on one side of the first conductive layer comprises: forming the first transmission layer and the light absorption layer in sequence on one side of the first conductive layer; The step of patterning the functional layer to form a first wiring trench penetrating at least a portion of the functional layer includes: Patterning the light absorption layer and the first transmission layer to form a first line groove penetrating the light absorption layer and the first transmission layer; After patterning the functional layer to form a first wire groove penetrating at least a portion of the functional layer and before forming a protective layer on a side of the functional layer away from the first conductive layer, the method further includes: forming a second transmission layer on a side of the light absorbing layer away from the first conductive layer; The step of forming a protective layer on a side of the functional layer away from the first conductive layer, wherein the first wiring groove is at least filled with the protective layer, comprises: forming a protective layer on a side of the second transmission layer away from the first conductive layer, and the first wire groove is filled with the second transmission layer and the protective layer; The step of at least patterning the protective layer to form a second wiring slot at least passing through the protective layer comprises: The protection layer and the second transmission layer are patterned to form a second wiring groove penetrating the protection layer and the second transmission layer.

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