Substrate holding apparatus, film forming apparatus, and method for controlling film forming apparatus

Abstract

Provided is a technique capable of improving alignment accuracy of a substrate in a film forming apparatus. A substrate holding apparatus for a film forming apparatus for forming a film on a substrate, the substrate holding apparatus being characterized by comprising: an electrostatic chuck that adsorbs the substrate; and a temperature control member provided with a Peltier element for controlling the temperature of the electrostatic chuck.

Description

Technical Field

[0001] The present invention relates to a substrate holding device for a film forming apparatus. Background Art

[0002] In recent years, as display screens for monitors, televisions, smartphones, etc., flat panel display devices such as organic EL display devices are used. The panel of an organic EL display device has a structure in which an organic layer that causes light emission is formed between two opposing electrodes (a cathode electrode and an anode electrode). When forming an organic EL display panel using a film forming apparatus, the peripheral portion of the substrate is held by a substrate holder disposed in the chamber of the film forming apparatus, and an evaporation source provided in the lower part of the chamber is heated to release a vapor deposition material of a metal or an organic substance, which is vapor deposited onto the lower surface of the substrate via a mask.

[0003] Here, the central portion of the substrate that holds the peripheral portion may sometimes be deflected due to its own weight. If the size of the substrate is increased, the deflection of the central portion becomes larger, and the influence on the vapor deposition accuracy also becomes larger. As a method for reducing such deflection of the substrate, a technique of using an electrostatic chuck (ESC: Electrostatic chuck) to hold the substrate is proposed in Patent Document 1.

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2019-099910 Summary of the Invention

[0007] Problems to be Solved by the Invention

[0008] In the film forming chamber, the evaporation source is very hot, and there is a large temperature difference between the other components in the film forming chamber and the evaporation source. Therefore, it is difficult to control the temperatures of the electrostatic chuck, the substrate, and the mask, and sometimes deformation and dimensional changes due to thermal expansion occur in these components. Due to the influence of this dimensional change, there may be a reduction in alignment accuracy and a reduction in film quality.

[0009] An object of the present invention is to provide a technique capable of performing high-precision temperature control in a film forming apparatus.

[0010] Means for Solving the Problems

[0011] To solve the above problems, the substrate holding device of the present invention is for a film forming apparatus for forming a film on a substrate, and is characterized by including: an electrostatic chuck that adsorbs the substrate; and a temperature control member that includes a Peltier element for controlling the temperature of the electrostatic chuck.

[0012] In order to solve the above problems, the film forming apparatus of the present invention includes: a chamber; an evaporation source disposed in the chamber; an electrostatic chuck disposed in the chamber for adsorbing a substrate; and a mask that is joined to the film forming surface of the substrate adsorbed on the electrostatic chuck, and is characterized by including: a temperature adjusting member having a Peltier element for controlling the temperature of the electrostatic chuck; a temperature sensor for detecting the temperature of the electrostatic chuck; a current supply unit for passing a current through the Peltier element; and a control unit for controlling the current flowing from the current supply unit to the Peltier element based on the detected temperature of the temperature sensor.

[0013] In order to solve the above problems, the film forming apparatus of the present invention includes: a first film forming chamber having a first chamber, a first evaporation source, a first electrostatic chuck, a first mask, a first alignment mechanism, a first temperature adjusting member, a first temperature sensor, and a first current supply unit, wherein the first evaporation source is disposed in the first chamber, the first electrostatic chuck is disposed in the first chamber for adsorbing a substrate, the first mask is joined to the film forming surface of the substrate adsorbed on the first electrostatic chuck, the first alignment mechanism aligns the substrate adsorbed on the first electrostatic chuck and the first mask, the first temperature adjusting member has a first Peltier element for controlling the temperature of the first electrostatic chuck, the first temperature sensor detects the temperature of the first electrostatic chuck, and the first current supply unit passes a current through the first Peltier element; a second film forming chamber for forming a film on the substrate that has been formed with a film in the first film forming chamber, the second film forming chamber having a second chamber, a second evaporation source, a second electrostatic chuck, a second mask, a second alignment mechanism, and a second temperature sensor, wherein the second evaporation source is disposed in the second chamber, the second electrostatic chuck is disposed in the second chamber for adsorbing a substrate, the second mask is joined to the film forming surface of the substrate adsorbed on the second electrostatic chuck, the second alignment mechanism aligns the substrate adsorbed on the second electrostatic chuck and the second mask, and the second temperature sensor detects the temperature of the second mask; and a control unit for controlling the current flowing from the first current supply unit to the first Peltier element, and is characterized in that the control unit controls the current flowing from the first current supply unit to the first Peltier element based on the detected temperature of the first temperature sensor and the detected temperature of the second temperature sensor.

[0014] In order to solve the above problems, a control method for a film forming apparatus according to the present invention is a temperature adjustment method for the film forming apparatus. The film forming apparatus includes: a chamber; an evaporation source disposed in the chamber; an electrostatic chuck disposed in the chamber for adsorbing a substrate; and a mask that is joined to a film forming surface of the substrate adsorbed to the electrostatic chuck. The control method for the film forming apparatus is characterized in that a temperature adjustment member, a current supply unit, and a temperature sensor are provided. The temperature adjustment member includes a Peltier element for controlling the temperature of the electrostatic chuck. The current supply unit causes a current to flow through the Peltier element. The temperature sensor detects the temperature of the electrostatic chuck. The control method for the film forming apparatus controls the current flowing from the current supply unit to the Peltier element based on the detected temperature of the temperature sensor.

[0015] In order to solve the above problems, in a control method for a film forming apparatus according to the present invention, the film forming apparatus includes: a first film forming chamber including a first chamber, a first evaporation source, a first electrostatic chuck, a first mask, a first alignment mechanism, a first temperature adjustment member, a first temperature sensor, and a first current supply unit. The first evaporation source is disposed in the first chamber. The first electrostatic chuck is disposed in the first chamber for adsorbing a substrate. The first mask is joined to a film forming surface of the substrate adsorbed to the first electrostatic chuck. The first alignment mechanism aligns the substrate adsorbed to the first electrostatic chuck and the first mask. The first temperature adjustment member includes a first Peltier element for controlling the temperature of the first electrostatic chuck. The first temperature sensor detects the temperature of the first electrostatic chuck. The first current supply unit causes a current to flow through the first Peltier element; and a second film forming chamber that forms a film on the substrate that has been formed with a film in the first film forming chamber. The second film forming chamber includes a second chamber, a second evaporation source, a second electrostatic chuck, a second mask, a second alignment mechanism, and a second temperature sensor. The second evaporation source is disposed in the second chamber. The second electrostatic chuck is disposed in the second chamber for adsorbing a substrate. The second mask is joined to a film forming surface of the substrate adsorbed to the second electrostatic chuck. The second alignment mechanism aligns the substrate adsorbed to the second electrostatic chuck and the second mask. The second temperature sensor detects the temperature of the second mask. The control method for the film forming apparatus is characterized in that the current flowing from the first current supply unit to the first Peltier element is controlled based on the detected temperature of the first temperature sensor and the detected temperature of the second temperature sensor.

[0016] Advantages of the Invention

[0017] According to the present invention, high-precision temperature control can be performed in a film forming apparatus. Description of the Drawings

[0018] Figure 1 It is a schematic top view showing the structure of a film forming apparatus.

[0019] Figure 2 It is a cross-sectional view showing the internal structure of a film forming chamber.

[0020] Figure 3 It is a schematic view showing an example of a production line of an organic EL display device.

[0021] Figure 4 It is a schematic cross-sectional view explaining the structure of a temperature control mechanism according to Embodiment 1 of the present invention.

[0022] Figure 5 It is a schematic view showing an example of temperature control in an organic EL production line.

[0023] Figure 6 It is a schematic cross-sectional view explaining the structure of a temperature control mechanism according to Embodiment 2 of the present invention.

[0024] Figure 7 It is a schematic top view showing the arrangement structure and control structure of a plurality of temperature control members.

[0025] Figure 8 It is a schematic cross-sectional view explaining the structure of a temperature control mechanism according to Embodiment 3 of the present invention.

[0026] Figure 9 It is a schematic cross-sectional view explaining the structure of a temperature control mechanism according to Embodiment 4 of the present invention.

[0027] Figure 10 It is a schematic cross-sectional view explaining the structure of a temperature control mechanism according to Embodiment 5 of the present invention.

[0028] Figure 11 It is a schematic cross-sectional view explaining the structure of a temperature control mechanism according to Embodiment 6 of the present invention.

[0029] Figure 12 It is a diagram explaining a method for manufacturing an electronic device. Detailed Description of the Invention

[0030] Hereinafter, embodiments of the present invention will be described in detail. However, the following embodiments are merely exemplary representations of preferred structures of the present invention, and the scope of the present invention is not limited to these structures. In addition, the hardware structure, software structure, processing flow, manufacturing conditions, dimensions, materials, shapes, relative arrangements, etc. of the devices in the following description are not intended to limit the scope of the present invention only to these unless otherwise specifically stated.

[0031] The present invention is applicable to a film forming apparatus for forming a thin film of a film forming material on the surface of a film forming object such as a substrate by evaporation or sputtering. The present invention can be understood as a temperature control mechanism, a substrate holding device and a film forming apparatus, and a temperature control method or a control method using these devices. The present invention can also be understood as a manufacturing apparatus for electronic devices and its control method, and a manufacturing method for electronic devices. The present invention can also be understood as a program for causing a computer to execute a temperature control method and a control method, and a storage medium storing the program. The storage medium can be a non-transitory storage medium readable by a computer.

[0032] As the material of the substrate in the present invention, any material such as glass, resin, metal, and silicon can be used. As the film forming material, any material such as an organic material and an inorganic material (metal, metal oxide) can be used. The "substrate" in the following description includes a substrate on which film formation has been performed one or more times on the surface of the substrate material. The technology of the present invention is typically applied to manufacturing apparatuses for electronic devices and optical components. It is particularly suitable for organic electronic devices such as an organic EL display having an organic EL element and an organic EL display device using the organic EL display. The present invention can also be used for thin film solar cells and organic CMOS image sensors.

[0033] <Embodiment>

[0034] (Device Structure)

[0035] Figure 1 It is a top view schematically showing the structure of the film forming apparatus 1. Here, the production line of the organic EL display will be described. In the case of manufacturing an organic EL display, a substrate of a specified size is carried into the production line, and after forming an organic EL and a metal layer, post-treatment processes such as cutting the substrate are performed.

[0036] The film forming apparatus 1 includes a transfer chamber 130 disposed in the center, a plurality of film forming chambers 110 (110a to 110d) disposed around the transfer chamber 130, and a mask storage chamber 120 (120a, 120b). The film forming chamber 110 has a chamber for performing a film forming process on the substrate 10. The mask storage chamber 120 stores masks before and after use. A transfer robot 140 provided in the transfer chamber 130 transfers the substrate S and the mask M into and out of the transfer chamber 130. The transfer robot 140 is, for example, a robot having a robot hand for holding the substrate S and the mask M mounted on a multi-joint arm.

[0037] The passage chamber 150 conveys the substrate S conveyed from the upstream side in the substrate conveyance direction to the conveyance chamber 130. The buffer chamber 160 conveys the substrate S after the film formation process in the conveyance chamber 130 to other film formation clusters on the downstream side. When receiving the substrate S from the passage chamber 150, the transfer robot 140 conveys it to one of the plurality of film formation chambers 110. The transfer robot 140 also receives the substrate S after the film formation process is completed from the film formation chamber 110 and conveys it to the buffer chamber 160.

[0038] Figure 1 The film formation apparatus 1 shown forms a film formation cluster and can be connected to other film formation clusters on the upstream side and the downstream side. A turning chamber 170 for changing the direction of the substrate 10 is provided on the more upstream side of the passage chamber 150 and on the more downstream side of the buffer chamber 160. Each chamber such as the film formation chamber 110, the mask storage chamber 120, the conveyance chamber 130, the buffer chamber 160, and the turning chamber 170 is maintained in a high vacuum state during the manufacturing process.

[0039] The film formation materials in the plurality of film formation chambers 110a to 110d of the film formation apparatus 1 may be the same or different. For example, film formation sources of different film formation materials may be respectively arranged in the film formation chambers 110a to 110d, and the substrate S forms a laminated structure while sequentially moving in the film formation chambers 110a to 110d. Alternatively, by arranging film formation sources of the same film formation material in the film formation chambers 110a to 110d, film formation can be performed in parallel with a plurality of substrates S. Alternatively, a first film formation material may be arranged in the film formation chambers 110a and 110c, and a second film formation material may be arranged in the film formation chambers 110b and 110d, and control may be performed so that after the first layer is formed in the film formation chamber 110a or 110c, the second layer is formed in the film formation chamber 110b or 110d.

[0040] According to the type of the electrostatic chuck, the adsorption force of the substrate can be increased when a conductor adheres to the substrate. In such a case, adsorption can be effectively performed when a thin film of a metal material serving as an electrode layer has already been formed in the region (typically the central portion of the substrate) where the organic EL element is formed in the substrate. For example, when organic layers are sequentially formed on the substrate on which the electrode layer is formed in the film formation chamber 110a in the film formation chambers 110b to 110d, it is effective to arrange electrostatic chucks in the film formation chambers 110b to 110d.

[0041] (Film formation chamber)

[0042] Figure 21 is a cross-sectional view showing the internal structure of the film forming chamber 110. In the film forming chamber 110, a series of film forming processes are performed, including receiving the substrate S and mask M from the conveying robot 140, delivering the substrate S and mask M to the conveying robot 140, aligning to adjust the relative positional relationship between the substrate S and the mask M, fixing the substrate S to the mask M, and film forming. In the following description, an XYZ orthogonal coordinate system with the vertical direction as the Z direction is used, and θ represents the rotation around the Z axis.

[0043] The film forming chamber 110 has a chamber 200. The interior of the chamber 200 is maintained in a vacuum environment or an inert gas environment such as nitrogen during film forming. An electrostatic chuck C, a magnet plate MP, a temperature control member TM, a cooling plate CP, a substrate support 210, a mask stage 221, an evaporation source 240 (film forming source), etc. are provided inside the chamber 200.

[0044] The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate. As the mask M, for example, a metal mask formed around a metal foil with a pattern supported by a frame can be used. The mask M is set on the mask stage 221. In the structure of this embodiment, after the substrate S is positioned and placed on the mask M, film formation is performed.

[0045] The substrate support part 210 has a plurality of claw-shaped support members 210a for receiving the substrate S transported to the film forming chamber. The electrostatic chuck C is a substrate holding mechanism inside the film forming chamber, and uses electrostatic force to adsorb and hold the substrate S supported by the substrate support part 210. The electrostatic chuck C abuts against the surface of the substrate S opposite to the surface in contact with the mask M (film forming surface).

[0046] In addition, the substrate support 210 may include a pressing member corresponding to the support 210a. The support 210a and the pressing member clamp the end of the substrate S, so that the substrate support 210 can hold the substrate S in addition to the electrostatic chuck C, so that the substrate S is more stable.

[0047] The magnet plate MP is provided to attract the mask M and make it close to and adsorb to the film-forming surface of the substrate S. When the substrate S adsorbed on the electrostatic chuck C and whose relative position is adjusted (aligned) is placed on the upper surface of the mask M (the film-forming surface of the substrate S is bonded to the mask M), the magnet plate MP is lowered from above the electrostatic chuck C and abuts against the upper surface of the electrostatic chuck C (via the high thermal conductivity sheet HT in Example 1, etc.). The magnet plate MP applies a magnetic force to the mask M via the electrostatic chuck C and the substrate S (so that the magnetic attraction acts to attract it upward (to the substrate S side)), thereby making the mask M and the substrate S close to each other.

[0048] The film forming apparatus of this embodiment includes a temperature control unit T as a temperature control mechanism (temperature control mechanism) for suppressing the temperature rise of the substrate S during film formation and preventing the deterioration and degradation of the organic material. As an example, the temperature control unit T is composed of a temperature control member TM, a cooling plate CP, etc., but the specific structure will be described later.

[0049] The evaporation source 240 is a film forming mechanism including a container such as a crucible for accommodating the evaporation material, a heater, a shutter, a driving mechanism, an evaporation rate monitor, etc. In addition, the film forming source is not limited to the evaporation source, and a sputtering device can also be used.

[0050] On the upper outer side of the chamber 200, an alignment stage 280, an electrostatic chuck lifting mechanism 291, a magnet plate lifting mechanism 292, etc. are provided. The alignment stage 280 is a mechanism for moving the electrostatic chuck C and the magnet plate MP in the horizontal direction (XYθ direction). The electrostatic chuck lifting mechanism 291 is a mechanism for lifting and lowering the electrostatic chuck C in the Z-axis direction. The magnet plate lifting mechanism 292 is a mechanism for lifting and lowering the magnet plate MP in the Z-axis direction. Thus, it is possible to perform position adjustment (adjustment of the relative distance) of the electrostatic chuck C with respect to the substrate S in a direction intersecting the plane along the film forming surface of the substrate S, and position adjustment of the magnet plate MP with respect to the mask M.

[0051] The alignment stage 280 is configured to be able to relatively move in the horizontal direction (XYθ direction) with respect to the chamber 200 by receiving the driving force of the motor 281 for driving the alignment stage via an actuator such as the UVW method, for example. On the upper surface of the outer side of the chamber 200, three linear actuators composed of a guide rail (not shown) fixedly provided on the upper surface of the chamber 200 and a linear block movably provided on the guide rail are arranged in such a way that two linear actuators are parallel to each other and one linear actuator is orthogonal. The bottom plate 282 is supported by three linear blocks, and the three linear blocks are respectively moved in a predetermined direction by the driving force of the motor 281 provided on the upper surface of the outer side of the chamber 200, whereby the bottom plate 282 moves in the horizontal direction (XYθ direction). By combining the moving directions of the three linear blocks, the bottom plate 282 moves to an arbitrary position in the horizontal direction and can change the direction in an arbitrary direction. By the movement of the bottom plate 282, the entire alignment stage 280 can relatively move in the horizontal direction (XYθ direction) with respect to the chamber 200.

[0052] The alignment stage 280 drives the motor 281 according to the control signal sent from the control unit 270 described later to move the electrostatic chuck C, so that the substrate S adsorbed and held by the electrostatic chuck C moves in the X direction and the Y direction and rotates in the θ direction. In addition, as the driving mechanism of the alignment stage 280, it is not limited to the above-mentioned UVW method actuator, and other known structures can also be used.

[0053] The electrostatic chuck lifting mechanism 291 and the magnet plate lifting mechanism 292 are mounted on the alignment stage 280. Therefore, by moving the alignment stage 280 relative to the chamber 200 in the horizontal direction (XYθ direction), the electrostatic chuck C and the magnet plate MP also move relative to the chamber 200 in the horizontal direction (XYθ direction).

[0054] The electrostatic chuck lifting mechanism 291 is a mechanism for lifting and lowering the electrostatic chuck C in the Z-axis direction and is mounted on the alignment stage bottom plate 282. The electrostatic chuck C in the chamber 200 is connected to the electrostatic chuck lifting mechanism 291 outside the chamber 200 via a shaft that penetrates the top plate of the chamber 200 airtightly. The electrostatic chuck lifting mechanism 291 includes a motor (not shown) for driving the lifting of the electrostatic chuck and an actuator (not shown) for driving the lifting of the electrostatic chuck. The actuator is configured to be able to receive the driving force of the motor and lift and lower the shaft supporting the electrostatic chuck C. As a specific example of the actuator, for example, a linear guide, a ball screw, etc. can be cited.

[0055] The magnet plate lifting mechanism 292 is a mechanism for lifting and lowering the magnet plate MP in the Z-axis direction and is mounted on the alignment stage bottom plate 282. The magnet plate MP in the chamber 200 is connected to the magnet plate lifting mechanism 292 outside the chamber 200 via a shaft that penetrates the top plate of the chamber 200 airtightly. The magnet plate lifting mechanism 292 includes a motor (not shown) for driving the lifting of the magnet plate and an actuator (not shown) for driving the lifting of the magnet plate. The actuator is configured to be able to receive the driving force of the motor and lift and lower the shaft supporting the magnet plate MP. As a specific example of the actuator, for example, a linear guide, a ball screw, etc. can be cited.

[0056] In this way, the electrostatic chuck lifting mechanism 291 and the magnet plate lifting mechanism 292 are provided on the bottom plate 282 of the alignment stage 280. Therefore, by moving the alignment stage 280 in the horizontal direction (XYθ direction), the electrostatic chuck lifting mechanism 291 and the magnet plate lifting mechanism 292 (and thus the electrostatic chuck C and the magnet plate MP) also move in the horizontal direction (XYθ direction). As a result, for example, even if a positional deviation occurs between the substrate S and the electrostatic chuck C, their relative positions can be adjusted. Similarly, for example, even if a positional deviation occurs between the mask M and the magnet plate MP, their relative positions can be adjusted.

[0057] In addition, in the present embodiment, the substrate support portion 210 and the mask stage 221 are fixed relative to the chamber 200 in the horizontal direction (XYθ direction), but are configured to be able to lift and lower in the vertical direction (Z-axis direction). The lifting mechanism for lifting and lowering the substrate support portion 210 and the mask stage 221 in the vertical direction is provided on the upper surface outside the chamber 200 in a manner separated and independent from the alignment stage.

[0058] The elevating mechanisms (not shown) of the substrate support portion 210 and the mask stage 221 are provided on a bottom plate (not shown) that is fixed to the outer upper surface of the chamber 200 and is different from the bottom plate 282, and are separated and independent from the alignment stage 280. Therefore, even if the alignment stage 280 moves in the horizontal (XYθ) direction, the substrate support portion 210 and the mask stage 221 do not move in the horizontal (XYθ) direction.

[0059] In addition, in the present embodiment, it is configured to adjust the position of the substrate S (by adjusting the position of the electrostatic chuck C), but as long as the substrate S can be opposedly aligned with the mask M, it may also be a structure that adjusts the position of the mask M or a structure that adjusts both the substrate S and the mask M.

[0060] When the electrostatic chuck C holds the substrate S supported by the substrate support portion 210, first, the electrostatic chuck elevating mechanism 291 lowers the electrostatic chuck C so that the electrostatic chuck C abuts against or sufficiently approaches the substrate S. Then, the control unit 270 controls the power supply 290 to apply a predetermined adsorption voltage to the electrodes embedded in the electrostatic chuck C. Thereby, the substrate S is held by the electrostatic chuck C.

[0061] Next, at the time of alignment, the electrostatic chuck elevating mechanism 291 further lowers the electrostatic chuck C to bring the substrate S closer to the mask M. Then, the alignment stage 280 performs alignment.

[0062] Here, the electrostatic chuck C in the present embodiment becomes an element constituting the substrate holding device of the present invention. The elements constituting the substrate holding device of the present invention sometimes include the power supply 290, the control unit 270, the electrostatic chuck elevating mechanism 291, etc. The temperature control unit T or the constituent elements of the temperature control unit T in various modes described later are included in the elements constituting the substrate holding device or the film forming device of the present invention as the temperature control mechanism and the like in the present invention.

[0063] Next, at the time of film formation, the evaporation source 240 emits the film forming material. When the film formation is completed, the magnet plate elevating mechanism 292 raises the magnet plate MP, and the electrostatic chuck elevating mechanism 291 raises the electrostatic chuck C to transfer the substrate S on which the film formation is completed to the transfer robot. Then, by setting the voltage applied to the electrostatic chuck C to a predetermined peeling voltage (for example, 0 V), the holding of the substrate S is released.

[0064] A camera 262 for performing optical photography to generate image data is provided on the upper outer side of the chamber 200. The camera 262 performs photography through a vacuum sealing window provided in the chamber 200. In the present embodiment, a plurality of cameras 262 corresponding to the four corners of the substrate S are provided. Each camera 262 is configured to include a substrate alignment mark provided at a corner portion of the substrate S and a mask alignment mark provided at a corner portion of the mask M within the photographing range.

[0065] At the time of alignment, the camera 262 captures the substrate S and the mask M and outputs image data to the control unit 270. The control unit 270 analyzes the captured image data and obtains the position information of the substrate alignment mark and the mask alignment mark by means of pattern matching processing or the like. Then, based on the position offset between the substrate alignment mark and the mask alignment mark, the XY direction, the moving distance, and the rotation angle θ for moving the substrate S are calculated. Then, the calculated movement amount is converted into the drive amount of the stepping motor, the servo motor, etc. provided in each actuator of the alignment stage 280, and a control signal is generated. In addition, two-stage alignment can also be performed using a low-resolution but wide-field-of-view camera for rough alignment and a narrow-field-of-view but high-resolution camera for fine alignment.

[0066] The control unit 270 is an information processing device that communicates with the respective components of the film forming apparatus 1 via control lines (not shown) and wireless communication, receives data from the respective components, or sends signals to the respective components to control the operation. The control unit 270 can be constituted by, for example, a computer having a processor, a memory, a storage device, I / O, etc. In this case, the functions of the control unit 270 are realized by the processor executing programs stored in the memory or the storage device. As the computer, a general personal computer can be used, or an embedded computer or a PLC (programmable logic controller) can be used. Alternatively, part or all of the functions of the control unit 270 can be constituted by circuits such as ASICs and FPGAs. In addition, the control unit 270 can be provided for each film forming chamber, or a single control unit 270 can control multiple film forming chambers.

[0067] The power supply 290 is a high-voltage power supply device that can supply voltage to the respective components of the film forming apparatus 1 via conductive wires (not shown). The power supply 290 controls the polarity and magnitude of the applied voltage according to an instruction from the control unit 270. The power supply 290 can be said to be a voltage supply mechanism. By controlling the polarity and magnitude of the voltage (adsorption voltage) applied to the electrode of the electrostatic chuck C, the adsorption force on the substrate S can be controlled. In addition, it can also be considered to combine the power supply 290 and the control unit 270 to form the power supply of the film forming apparatus.

[0068] In addition, the application object of the present invention is not limited to the above-described cluster-type film forming apparatus. The present invention can also be applied to the following serial-type film forming apparatus: a plurality of chambers are connected in vacuum in series, and the substrate held on the substrate carrier is film-formed while moving between the chambers.

[0069] (Electrostatic chuck)

[0070] The electrostatic chuck C has a structure in which a circuit such as a metal electrode is embedded in a plate-shaped base material made of ceramics or the like. Generally, as an electrostatic chuck, depending on the principle of adsorbing a substrate, there are types such as the gradient force type, the Coulomb force type, and the Johnson-Raghavendra force type. In any case, the higher the applied adsorption voltage, the higher the adsorption force.

[0071] The gradient force type electrostatic chuck adsorbs an object to be adsorbed by using the attractive force generated toward a region where there is a potential gradient caused by the potential difference between electrodes. The gradient force has the characteristic that it is generated even if the object to be adsorbed is an insulator. Therefore, even a raw glass sheet or a glass substrate on which a conductor is not formed can be held. When generating the gradient force, the adsorption voltage is applied in such a way that the potential of the first electrode is higher than the reference and the potential of the second electrode is lower than the reference with the potential of the object to be adsorbed as the reference. In order to increase this gradient force, it is necessary to make the potential gradient as steep as possible. For this purpose, the space between the electrodes needs to be reduced and the electrodes need to be densely arranged. Therefore, as the electrodes used for the gradient force type electrostatic chuck, two comb-shaped electrodes having a structure in which protruding comb teeth mesh with each other are preferably used.

[0072] The Coulomb force type electrostatic chuck adsorbs an object to be adsorbed by using the electrostatic attraction generated by applying voltages of positive potential and negative potential to two electrodes respectively, which is effective when the object to be adsorbed is a conductor. Therefore, if it is a substrate on which an electrode layer of a metal material is formed, it can be effectively adsorbed. When the object to be adsorbed is in a floating state not connected to the ground, by making both the positive electrode and the negative electrode face the object to be adsorbed, polarization can be generated in the object to be adsorbed and adsorption can be performed. In addition, when the object to be adsorbed is grounded, adsorption can be performed through at least one of the positive electrode and the negative electrode. The Coulomb force is usually stronger than the gradient force. In addition, the larger the area of the electrode facing the object to be adsorbed, the stronger the adsorption force. Therefore, in order to increase the adsorption force, it is necessary to increase the ratio of the electrode area to the area of the electrostatic chuck as much as possible.

[0073] The Johnson-Raghavendra force type electrostatic chuck adsorbs a conductive object to be adsorbed by allowing a leakage current to flow in the order of the positive electrode, the object to be adsorbed, and the negative electrode, and a dielectric having a volume resistivity within a specified range needs to be disposed between the electrode and the object to be adsorbed. The Johnson-Raghavendra force is usually stronger than the Coulomb force. In addition, in the Johnson-Raghavendra force type electrostatic chuck, the larger the contact area with the object to be adsorbed, the stronger the adsorption force.

[0074] (Production line of an organic EL display device)

[0075] Figure 3 An example of a production line of an organic EL display device is shown. Figure 3The production line shown becomes one in which Figure 1 the film-forming cluster (film-forming apparatus) 1 having four film-forming chambers 11 shown is connected in series in such a manner that there are five (film-forming clusters 1-1 to 1-5) and one film-forming cluster 1b having two film-forming chambers 11 (film-forming cluster 1-6).

[0076] Among the five film-forming clusters 1-1 to 1-5, the four film-forming clusters 1-1 to 1-4 upstream in the production line constitute the first organic vapor deposition section 102 for forming a total of eight organic layers in the production line, and two organic layers are formed on the substrate S in each film-forming cluster. The film-forming cluster 1-5 downstream of the first organic vapor deposition section 102 in the production line constitutes the metal vapor deposition section 103 in the production line, and two metal layers are formed on the substrate S. The film-forming cluster 1b downstream of this production line constitutes the second organic vapor deposition section 104 in the production line, and one organic layer is formed on the substrate S.

[0077] In the production line of the organic EL display device, the substrate S is first introduced into the pre-treatment section 101, and after performing necessary pre-treatment processes, it is transported to the post-treatment process via the first organic vapor deposition section 102, the metal vapor deposition section 103, and the second organic vapor deposition section 104. In Figure 3 the production line shown, the substrate S flows to the subsequent process through, for example, route A or route B indicated by the arrows in the figure.

[0078] The substrate S is heated in each vapor deposition section 102 to 104. That is, the substrate S is repeatedly heated during the process of passing through the production line. Generally, in order to evaporate the evaporation source, in the formation of the organic film, the evaporation source is heated to around 450 °C, and in the formation of the metal film, the evaporation source is heated to around 1300 °C.

[0079] When it is assumed that in the above production line, the temperature of the substrate S rises by 0.1 °C in the organic vapor deposition chamber and by 0.3 °C in the metal vapor deposition chamber, since there is almost no heat dissipation in the vacuum environment, the substrate S introduced into the pre-treatment section 101 at 23 °C rises to 24.5 °C after 11 vapor depositions. If the thermal expansion coefficient of a normal glass substrate is set to 3.8×10^- 6 / m / °C, then it elongates by 3.8×10^- 6 ×24.5 °C = 93.1 μm per 1 m. In addition, when moving from the organic vapor deposition chamber to the next organic vapor deposition chamber, it also elongates by 3.8×0.1 = 0.38 μm / m. In the case of a glass substrate of the G8H size classified as a large size, the long side is 2.5 m, and even with a temperature change of 0.1 °C, it elongates by 0.38×2.5 = 0.95 μm.

[0080] If such dimensional changes occur, for example, even if the substrate S and the mask M are aligned with a tolerance of ±2.0 μm, an offset caused by the elongation of the substrate S may occur, and the alignment accuracy may be reduced. Moreover, due to the reduction in alignment accuracy, the film quality may deteriorate, and it may not be possible to obtain good evaporation results. In addition, since the electrostatic chuck C may also undergo dimensional changes due to the high temperature during evaporation, the dimensional changes of the electrostatic chuck C are also superimposed, further increasing the possibility of a reduction in alignment accuracy.

[0081] (Temperature control mechanism)

[0082] The film forming apparatus in the present embodiment includes a temperature control mechanism (temperature adjustment mechanism) for controlling the temperature of the electrostatic chuck C to which the substrate S is attached, as a mechanism for suppressing the influence of the elongation of the substrate S in the above-described organic EL production line. By adjusting the temperature of the electrostatic chuck C, the heat applied to the substrate S during evaporation is absorbed via the electrostatic chuck C, suppressing the temperature rise of the substrate S. Moreover, control is performed so that the temperature of the substrate S before being fed to the next process can be reduced to the preferred feed temperature in the next process, and then the substrate S is conveyed to the next process. In addition, an example of the temperature rise of the substrate is shown here, but sometimes the temperature of the substrate gradually decreases during conveyance. In this case, control is performed so that the temperature can be increased to the preferred feed temperature in the next process, and then the substrate S is conveyed to the next process. It is not limited to keeping the temperature of the substrate constant, and the target substrate temperature can also be controlled differently in each chamber.

[0083] Hereinafter, as a specific structural example of the temperature control mechanism, temperature control units T1 to T7 of Examples 1 to 7 are shown.

[0084] <Example 1>

[0085] Figure 4 It is a schematic cross-sectional view for explaining the structure of the temperature control mechanism of Example 1 of the present invention.

[0086] As Figure 4 shown, the temperature adjustment mechanism in the film forming apparatus of the present embodiment includes a temperature control unit T1. The temperature control unit T1 includes a temperature control member TM, a high heat conduction sheet HT, a cooling plate CP, etc. As elements constituting the temperature control mechanism, in addition to the temperature control unit T1, it also includes a temperature sensor TS1, a temperature sensor TS2 (refer to Figure 2 ), a magnet plate MP as a first heat transfer member, an electrostatic chuck C as a second heat transfer member, etc.

[0087] (Temperature control member TM)

[0088] The temperature control member TM of this embodiment is a plate-shaped temperature control member assembled with a Peltier element. The temperature control member TM is provided integrally with the magnet plate MP and moves up and down together with the magnet plate MP. Specifically, it is arranged in contact with the upper surface of the bottom plate BP of the magnet plate MP (the surface on the opposite side of the surface facing the electrostatic chuck C).

[0089] In addition, in this embodiment, a plurality of temperature control members TM are arranged in a divided manner. That is, a plurality of temperature control members TM are arranged at equal intervals on the upper surface of the bottom plate BP of the magnet plate MP. In addition, the temperature control member TM may also be constituted by one member in such a way that it contacts almost the entire area of the upper surface of the bottom plate BP. That is, the structure of the temperature control member TM is not limited to Figure 4 the structure shown.

[0090] In addition, a cooling plate CP is arranged in contact with the upper surface of the temperature control member TM (the surface on the opposite side of the surface in contact with the magnet plate MP). That is, the temperature control member TM is arranged to be sandwiched between the magnet plate MP and the cooling plate CP in the Z-axis direction, and is configured to directly perform heat exchange between the magnet plate MP and the cooling plate CP.

[0091] Here, the Peltier element is a plate-shaped element in which P-type semiconductors and N-type semiconductors are alternately arranged. When a direct current is passed through the Peltier element, heat moves between the two surfaces of the element, resulting in a phenomenon where one surface generates heat and the temperature rises while the other opposite surface absorbs heat and the temperature drops. By switching the direction of the current input to the Peltier element, heating and cooling can be performed. Generally, the Peltier element has a fast response in temperature control elements and can be switched at high speed, so high-precision temperature control can be performed.

[0092] (High thermal conductivity sheet HT)

[0093] The high thermal conductivity sheet HT (high thermal conductivity member) is a sheet-shaped member made of a material with a higher thermal conductivity than the electrostatic chuck C and the magnet plate MP. The high thermal conductivity sheet HT is arranged in contact with the upper surface 261 of the electrostatic chuck C (the surface on the opposite side of the adsorption surface 260 for adsorbing the substrate S). When the magnet plate MP descends toward the electrostatic chuck C to attract (adsorb) the mask M to the substrate S, the magnet MG of the magnet plate MP contacts the upper surface of the high thermal conductivity sheet HT (the surface on the opposite side of the surface in contact with the electrostatic chuck C). That is, the high thermal conductivity sheet HT is in a state of being sandwiched between the electrostatic chuck C and the magnet plate MP in the Z-axis direction when the magnet plate MP descends (during the attracting operation of the mask M). In this state, the high thermal conductivity sheet HT is configured to perform heat exchange between the electrostatic chuck C and the magnet plate MP.

[0094] By bringing a high thermal conductivity sheet HT having a higher thermal conductivity than the electrostatic chuck C into contact with the electrostatic chuck C, the electrostatic chuck C can be efficiently cooled. This cooling effect can be obtained regardless of the size of the contact area between the high thermal conductivity sheet HT and the electrostatic chuck C, but the larger the contact area, the higher the cooling effect.

[0095] Here, in the present embodiment, it is configured such that the contact area between the high thermal conductivity sheet HT and the electrostatic chuck C is larger than the projection area of the plurality of magnets MG of the magnet plate MP in the Z-axis direction (the total contact area of the plurality of magnets MG with the high thermal conductivity sheet HT). Thus, compared with the case where the plurality of magnets MG of the magnet plate MP are directly in contact with the electrostatic chuck C, the cooling effect can be improved.

[0096] In addition, in the present embodiment, it is configured such that the contact area between the high thermal conductivity sheet HT and the electrostatic chuck C is larger than the projection area of the temperature control member TM in the Z-axis direction (the total contact area of the plurality of temperature control members TM with the magnet MG (bottom plate BP)). Thus, compared with the case where the plurality of temperature control members TM are directly in contact with the electrostatic chuck C, the cooling effect can be improved.

[0097] Moreover, in the present embodiment, it is configured to ensure that the contact area between the high thermal conductivity sheet HT and the electrostatic chuck C is as large as possible, and the high thermal conductivity sheet HT is in uniform contact with the entire upper surface 261 of the electrostatic chuck C. For example, it is preferable that the contact area between the high thermal conductivity sheet HT and the electrostatic chuck C is 50% or more of the area of the electrostatic chuck C projected in the Z-axis direction. Thus, the temperature of the electrostatic chuck C can be uniformly decreased as a whole.

[0098] (Cooling plate CP)

[0099] The cooling plate CP is a plate-shaped cooling member made of stainless steel, and a cooling pipe, i.e., a water channel WP, through which a refrigerant flows is provided inside. The water channel WP is configured to enable the cooling water as the refrigerant to circulate between the outside of the chamber 200, and the cooling water can absorb the heat applied to the cooling plate CP and discharge it to the outside. The cooling plate CP is an optional structure for further improving the cooling effect and can be omitted from the temperature control unit T1.

[0100] (Temperature sensor TS1)

[0101] The temperature sensor TS1 (first temperature detection mechanism) is a temperature sensor that detects the temperature of the electrostatic chuck C, is assembled to the base material 250 of the electrostatic chuck C, and is configured to be able to send the detected temperature to the control unit 270. As the temperature sensor TS1, for example, a thermistor, a diode, etc. can be used.

[0102] In this embodiment, the temperature of the electrostatic chuck C attached to the substrate S is constantly monitored by the temperature sensor TS1. The temperature of the substrate S rises due to the heat energy received during evaporation coating, and this heat energy is transferred to the electrostatic chuck C. The temperature sensor TS1 detects the temperature of the electrostatic chuck C at this time and feeds it back to the cooling operation based on the temperature control unit T1 (specifically, the temperature control member TM).

[0103] (Temperature sensor TS2)

[0104] The temperature sensor TS2 (second temperature detection mechanism) is a temperature sensor that detects the temperature of the mask M. As shown Figure 2 in the figure, it is provided on the side wall of the chamber 200 and is configured to be able to send the detected temperature to the control unit 270. As the temperature sensor TS2, for example, a radiation thermometer that measures the temperature of the mask M based on the electromagnetic wave (light) emitted from the mask M can be used.

[0105] (Temperature control unit)

[0106] The control unit 270 includes a current supply unit (refer to Figure 7 ) that causes current to flow through the Peltier element of the temperature control member TM based on the power supplied from the power supply 290. As the control unit in the temperature control mechanism, the control unit 270 controls the temperature (heat exchange state) of the temperature control member TM by controlling the current flowing through the Peltier element of the temperature control member TM by the current supply unit. It can be considered that the control unit 270 and the power supply 290 are included in the structure (temperature control unit) of the temperature control mechanism of the present invention together.

[0107] The control unit 270 controls the temperature control member TM based on the detected temperature of the temperature sensor TS1 and the detected temperature of the temperature sensor TS2. Specifically, for example, when the substrate S is coated in multiple film-forming chambers, control is performed so that the temperature of the electrostatic chuck C provided in the current film-forming chamber (first film-forming chamber) approaches the temperature of the mask M provided in the next film-forming chamber (second film-forming chamber). At this time, the temperature sensor TS2 provided in the chamber 200 of the next film-forming chamber is used to detect the temperature of the mask M provided in the next film-forming chamber (second film-forming chamber).

[0108] That is, the temperature of the electrostatic chuck C (first electrostatic chuck) in the current film-forming chamber (first film-forming chamber) is monitored by the temperature sensor TS1 (first temperature sensor) provided in the electrostatic chuck C (first electrostatic chuck). At the same time, the temperature of the mask M (second mask) in the next film-forming chamber (second film-forming chamber) is detected by the temperature sensor TS2 (second temperature sensor) provided in the next film-forming chamber (second film-forming chamber). Then, the current application to the temperature adjustment member TM (first temperature adjustment member) in the current film-forming chamber (first film-forming chamber) is controlled so that the detected temperature of the temperature sensor TS1 (first temperature sensor) approaches the detected temperature of the temperature sensor TS2 (second temperature sensor).

[0109] Figure 5 is a schematic diagram showing an example of temperature adjustment control in an organic EL production line. In an organic EL production line, it is sometimes required to match the temperature of the substrate S with the temperature in the chamber 200 in each process and the temperature of the mask M in each process. As Figure 5 shown, in each film-forming cluster 1-1 to 1-5, 1b, the temperature of the mask M may vary depending on film-forming conditions and the like. In addition, as can be understood by comparing with the temperature rise of the substrate S in the case where the temperature adjustment control of the present embodiment shown in Figure 3 is not performed, especially in the latter half of the production line, the temperature difference between the substrate S and the mask M becomes more significant.

[0110] According to the present embodiment, it is possible to match the temperature of the electrostatic chuck C, that is, the temperature of the substrate S, with the temperature in each chamber 200 and the temperature of the mask M. That is, according to the present embodiment, the temperature of the substrate S can be controlled to match Figure 5 the temperature of the mask M in each film-forming cluster 1-1 to 1-5, 1b shown in

[0111] (Other heat transfer members)

[0112] The magnet plate MP is a member that contacts the electrostatic chuck C and can be understood as a heat transfer member that, together with the electrostatic chuck C, undertakes heat transfer between the substrate S and the temperature adjustment member TM according to the specific manner of the temperature adjustment unit T. That is, it can be considered to be included in the structure of the temperature control mechanism of the present invention.

[0113] The magnet plate MP is a magnetic force generating mechanism composed of a bottom plate BP and a plurality of magnets MG. The plurality of magnets MG are arranged at equal intervals and attached to the lower surface of the bottom plate BP (the surface of the bottom plate BP facing the electrostatic chuck C). Each magnet MG is configured as a protruding shape that protrudes from the lower surface of the bottom plate BP toward the side where the electrostatic chuck C is arranged along the Z-axis direction, and the front end surface thereof contacts the upper surface of the high heat conduction sheet HT.

[0114] A plurality of magnets MG attract the mask M toward the substrate S (in the Z-axis direction) by their magnetic forces, and their configuration is not particularly limited. For example, a configuration corresponding to the frame shape of the mask M may sometimes be adopted. That is, sometimes it is not a uniformly dispersed configuration corresponding to the entire area of the upper surface 261 of the electrostatic chuck C, but a non-uniform configuration.

[0115] In addition, the electrostatic chuck C is a member that contacts the substrate S to be temperature-controlled. From the viewpoint of temperature control of the substrate S, it can be understood as a heat transfer member that undertakes heat transfer between the substrate S and the temperature control member TM. The electrostatic chuck C is configured such that a positive electrode 251 and a negative electrode 252 are embedded in a base material 250 made of ceramics or the like. The positive electrode 251 and the negative electrode 252 are connected to a power supply 290, and a voltage of a desired magnitude is applied under the control of the control unit 270 to generate an adsorption force corresponding to the magnitude of the voltage to attract the substrate S.

[0116] (Structural features of the temperature control unit T1)

[0117] The temperature control unit T1 of the present embodiment uses a temperature control member composed of a Peltier element or the like, and is configured to control the temperature of the electrostatic chuck C while monitoring the temperature of the electrostatic chuck C and the temperature of the mask M. In addition, it is configured such that a high thermal conductivity sheet HT contacts the electrostatic chuck C, and the temperature of the electrostatic chuck C is controlled via this high thermal conductivity member (by controlling the temperature of this high thermal conductivity member).

[0118] Moreover, when viewed from the mask M side in the Z-axis direction (the direction intersecting the adsorption surface 260 of the electrostatic chuck C), the structure of the temperature control unit T1 is arranged in the order of the mask M, the electrostatic chuck C, the magnet plate MP, and the temperature control mechanism (the temperature control member TM, the cooling plate CP, etc.). According to this structure, for example, even when a magnetic member is included in the temperature control mechanism, the influence of the magnetic member on the adsorption effect of the magnet plate MP on the mask M can be reduced.

[0119] As the temperature control mechanism (cooling mechanism) used in the film forming apparatus, various structures can be cited. For example, it can also be considered that, different from the above-described temperature control mechanism of the present embodiment, a structure in which another cooling member is further arranged between the magnet plate MP and the mask M is adopted. In such a structure, by adopting the structure of the temperature control unit T1 of the present embodiment, at least a part of the cooling mechanism is arranged at a position where the influence on the mask adsorption of the magnet plate MP is small, and the same effect as described above can also be obtained. Of course, by concentrating the temperature control structure on the temperature control unit T1 of the present embodiment, the effect of reducing the influence on the mask adsorption of the magnet plate MP can be further improved.

[0120] (Temperature control)

[0121] The temperature adjustment of the electrostatic chuck C using the temperature adjustment unit T1 of the present embodiment achieves the maximum effect when the magnet plate MP descends from a position away from the electrostatic chuck C (the first position) and comes into contact with the electrostatic chuck C (via the high heat conduction sheet HT) (the second position). In the process of the film forming process, after the substrate S after alignment is placed on the mask M, that is, when the mask M is closely attached to the substrate S by the magnetic force of the magnet plate MP, typically the magnet plate MP comes into contact with the electrostatic chuck C (descends toward the electrostatic chuck C).

[0122] In the temperature adjustment unit T1, particularly as the timing and period for controlling the temperature adjustment member TM (Peltier element), typically when the evaporation source 240 emits the film forming material, that is, when the substrate S is exposed to the highest temperature. In addition, after the film forming is completed, the state where the magnet plate MP is in contact with the electrostatic chuck C can be maintained unchanged, that is, the state where the substrate S is closely attached to the mask M can be maintained unchanged. For example, if it is a film forming apparatus equipped with a shutter, it can be set to the state where the shutter is closed, and the temperature adjustment can be continued. Or, the temperature adjustment may not be performed during the film forming, and after the film forming is completed, the state where the magnet plate MP is in contact with the electrostatic chuck C can be maintained unchanged, and the temperature adjustment can be started for the first time.

[0123] In addition, the temperature adjustment based on the control of the temperature adjustment member TM (Peltier element) can also be performed at a timing different from the film forming operation period. For example, it can be configured such that during the process of transporting the substrate S before and after the film forming operation, the magnet plate MP comes into contact with the electrostatic chuck C to control the temperature of the electrostatic chuck C. That is, the contact (descent) of the magnet plate MP to the electrostatic chuck C without the adsorption of the mask M to the substrate S can be performed, and the temperature adjustment based on the control of the temperature adjustment member TM (Peltier element) can be performed.

[0124] In addition, in a structure where the temperature adjustment member TM composed of a Peltier element is directly mounted on the electrostatic chuck C as in Embodiment 2 described later, the temperature of the electrostatic chuck C can be adjusted at any timing regardless of the operation status of the film forming apparatus.

[0125] In addition, the temperature adjustment control based on the temperature adjustment unit T1 is typically to cool the substrate S. However, for example, when the temperature of the substrate S is lower than the temperature of the mask M in the film forming production line shown Figure 5 there may also be a case where the electrostatic chuck C is heated by the operation of the Peltier element of the temperature adjustment member TM. Therefore, as the temperature adjustment member TM, it is not limited to the temperature adjustment member using a Peltier element, and it can also be a temperature adjustment member using a heater composed of a heating wire or the like.

[0126] In addition, as described above, one of the purposes of the temperature adjustment control based on the temperature adjustment unit T1 is to Figure 5In the process of the series of film forming lines (multiple film forming operations across multiple film forming chambers), the temperature of the substrate S is adjusted to match the temperature of the mask M used in the next film forming. However, the purpose of the temperature control by the temperature control unit T1 is not limited to the above purpose.

[0127] For example, depending on the characteristics of the film deposited on the substrate S, there is sometimes a need to reduce or increase the temperature of the substrate S as much as possible. In such a case, in one film forming chamber, the temperature of the electrostatic chuck C (i.e., the substrate S) can be controlled based on the detected temperature of the electrostatic chuck C by the temperature control unit T1.

[0128] In addition, the temperature of the member in contact with the temperature control member TM changes due to the cooling or heating of the Peltier element, and the temperature of other members in contact with the member also changes in a linked manner due to heat conduction. That is, the magnet plate MP is cooled by the temperature control member TM, and the high thermal conductivity sheet HT in contact with the magnet plate MP, the electrostatic chuck C in contact with the high thermal conductivity sheet HT, and the substrate S in contact with the electrostatic chuck C are cooled in sequence. And, of course, the mask M in contact with the substrate S is also cooled (the temperature control member TM is a temperature control mechanism that controls the temperature of each of the above-mentioned members).

[0129] The heat source in the film forming chamber is the radiant heat from the vaporized film forming material and the evaporation source, which mainly heats the mask M and the substrate S. The temperature of the substrate S and the mask M ultimately changes according to the difference between the amount of heating energy and the cooling capacity via the electrostatic chuck C. In addition, although a temperature gradient in which the temperature becomes higher on the side close to the evaporation source can be generated, the temperature rise of the mask M is also suppressed together with the substrate S compared to the case where the cooling by the temperature control unit T1 of this embodiment is not performed. That is, although the temperature control by the temperature control unit T1 of this embodiment is primarily aimed at the temperature control (cooling) of the substrate S, it can also be said that the temperature rise of the mask M is indirectly suppressed.

[0130] So, for example, with Figure 5 Different from the film forming lines shown, when it is desired to control the temperature of the mask M in each film forming chamber to the same temperature, the temperature control by the temperature control unit T1 of this embodiment can be used.

[0131] <Example 2>

[0132] Reference Figure 6 , Figure 7 , the temperature control unit T2 of Example 2 of the present invention is described. Figure 6 It is a schematic cross-sectional view for explaining the structure of the temperature adjustment mechanism according to the second embodiment of the present invention. Figure 7 is with Figure 6 The figure corresponding to the AA view is a schematic plan view showing another example of the arrangement structure and control structure of the plurality of temperature regulating components.

[0133] Here, in the structure of Example 2, only the points different from the structure of Example 1 will be described. In the structure of Example 2, the same reference numerals are assigned to the structures that are the same as those in the structure of Example 1, and the description thereof is omitted.

[0134] In the temperature control unit T1 of Example 1, the temperature control member TM is configured not to be in direct contact with the electrostatic chuck C, but to control the temperature of the electrostatic chuck C via the magnet plate MP and the high heat conduction sheet HT. In contrast, in the temperature control unit T2 of Example 2, as Figure 6 shown, the temperature control member TM is arranged to be in direct contact with the upper surface 261 of the electrostatic chuck C.

[0135] That is, in the temperature control unit T2 of Example 2, the temperature control member TM composed of Peltier elements directly recovers the heat energy transferred to the electrostatic chuck C for heat recovery to cool the electrostatic chuck C. On the other hand, the heat energy is radiated and transferred to the magnet plate MP. The heat energy transferred to the magnet plate MP is recovered by the water channel WP provided in the cooling plate CP. Thus, the temperature rise can be suppressed and the substrate S can be transported to the next process.

[0136] As Figure 7 shown, the temperature control unit T2 of Example 2 is configured to divide the upper surface 261 of the electrostatic chuck C into a plurality of regions 261-1 to 261-4, and independent temperature control members TM1 to TM4 are respectively arranged in the respective divided regions 261-1 to 261-4. And it is configured to be able to independently control the respective temperature control members TM1 to TM4. That is, it is configured to provide a corresponding plurality of power circuit parts TC1 to TC4 for the plurality of temperature control members TM1 to TM4 respectively. Each of the power circuit parts TC1 to TC4 has a structure in which two power supplies and two switches are connected in parallel, and is configured to be able to separately switch the heating state and the cooling state of the Peltier element by switching the direction of the current input to the Peltier element.

[0137] In addition, the temperature control unit T2 of Example 2 is configured to provide a plurality of temperature sensors TS1-1 to TS1-4 corresponding to the plurality of divided regions 261-1 to 261-4 and the plurality of temperature control members TM1 to TM4 as the temperature detection mechanism of the electrostatic chuck C. That is, the electrostatic chuck C is divided into a plurality of regions, and temperature sensors are arranged in each region to monitor the temperature of each region, and the current is passed through the Peltier element in such a way that each region becomes a desired temperature to control the temperature of the electrostatic chuck C. Thus, temperature control corresponding to the temperature difference between the divided regions 261-1 to 261-4, such as control to reduce the temperature difference, can be performed.

[0138] In addition, as an additional structure, in order to improve the heat transfer between the temperature adjustment member TM and the magnet plate MP, for example, a high heat conduction member may be disposed in the space between the plurality of magnets MG, and the temperature adjustment member TM and the bottom plate BP may be connected via the high heat conduction member.

[0139] In addition, the upper surface 261 of the electrostatic chuck C is configured to be divided into four divided regions 261-1 to 261-4, each of which is divided into two in the vertical and horizontal directions, and four temperature adjustment members TM1 to TM4, power circuit units TC1 to TC4, and temperature sensors TS1-1 to TS1-4 are respectively provided. However, the number of divisions and the division method are not limited thereto.

[0140] <Example 3>

[0141] Refer to Figure 8 , the temperature adjustment unit T3 of Example 3 of the present invention will be described. Figure 8 It is a schematic cross-sectional view for explaining the structure of the temperature adjustment mechanism of Example 3 of the present invention.

[0142] Here, in the structure of Example 3, only the points different from the structures of Examples 1 and 2 will be described. In the structure of Example 3, the same reference numerals are given to the structures that are the same as those of Examples 1 and 2, and the description thereof is omitted.

[0143] The temperature adjustment unit T3 of Example 3 is configured to mount a non-magnetic metal member MM having a higher thermal conductivity than the electrostatic chuck C and a higher thermal conductivity than the magnet plate MP on the bottom plate BP of the magnet plate MP. Instead of providing the non-magnetic metal member MM, the temperature adjustment unit T3 of Example 3 is configured to exclude the high heat conduction sheet HT of the temperature adjustment unit T1 of Example 1.

[0144] As described above, the plurality of magnets MG included in the magnet plate MP may not be uniformly arranged over the entire region of the upper surface 261 of the electrostatic chuck C, but may be arranged unevenly. In addition, from the viewpoint of temperature transfer, a configuration structure in which a sufficient contact area cannot be ensured may also be formed. That is, in the magnet plate MP, at least the magnet MG is a member whose primary purpose is to ensure the magnetic attraction effect of the mask M. Therefore, it is preferable to arrange a member whose primary purpose is to ensure thermal conductivity differently from the magnet MG.

[0145] From such a viewpoint, in the temperature control unit T3 of the third embodiment, a plurality of non-magnetic metal members MM are arranged in the space between a plurality of magnets MG on the facing surface of the magnet plate MP facing the electrostatic chuck C. Each non-magnetic metal member MM protrudes from the facing surface of the magnet MG toward the electrostatic chuck C more than the magnet MG. Therefore, when the magnet plate MP descends, the front end surface of the non-magnetic metal member MM comes into contact with the upper surface 261 of the electrostatic chuck C. A gap is formed between the magnet MG and the upper surface 261 of the electrostatic chuck C, but the height of the magnet MG is configured to sufficiently ensure the magnetic attraction force of the mask M.

[0146] In addition, in the temperature control unit T3 of the third embodiment, it may be configured to dispose the high heat conduction sheet HT of the temperature control unit T1 of the first embodiment on the upper surface 261 of the electrostatic chuck C, and the non-magnetic metal member MM is connected to the electrostatic chuck C via the high heat conduction sheet HT.

[0147] <Fourth Embodiment>

[0148] Refer to Figure 9 , and the temperature control unit T4 of the fourth embodiment of the present invention will be described. Figure 9 It is a schematic cross-sectional view for explaining the structure of the temperature control mechanism of the fourth embodiment of the present invention.

[0149] Here, in the structure of the fourth embodiment, only the points different from the structures of the first to third embodiments will be described. In the structure of the fourth embodiment, the same reference numerals are assigned to the structures that are the same as those of the first to third embodiments, and the description thereof is omitted.

[0150] As described above, the cooling plate CP is an optional structure in the temperature control unit T. Therefore, in the temperature control unit T4 of the fourth embodiment, different from the first to third embodiments, as Figure 9 shown, it is configured to exclude the cooling plate CP. When the temperature control of the substrate S can be sufficiently provided by the temperature control ability of the temperature control member TM, the cost advantage brought by excluding the cooling plate CP can be obtained.

[0151] In addition, as an additional structure, in order to improve the heat transfer between the temperature control member TM and the magnet plate MP, for example, a high heat conduction member may be arranged in the space between a plurality of magnets MG, and the temperature control member TM and the bottom plate BP are connected via the high heat conduction member.

[0152] <Fifth Embodiment>

[0153] Refer to Figure 10 , and the temperature control unit T5 of the fifth embodiment of the present invention will be described. Figure 10 It is a schematic cross-sectional view for explaining the structure of the temperature control mechanism of the fifth embodiment of the present invention.

[0154] Here, in the structure of Embodiment 5, only the points different from the structures of Embodiments 1 to 4 will be described. In the structure of Embodiment 5, the same reference numerals are assigned to the structures that are the same as those in Embodiments 1 to 4, and the description thereof is omitted.

[0155] The temperature control unit T5 of Embodiment 5 is configured such that, as a cooling mechanism replacing the temperature control member TM using a Peltier element in the temperature control units T1 to T4 of Embodiments 1 to 4, a cooling pipe, i.e., a water passage WP, through which a refrigerant flows in the bottom plate BP of the magnet plate MP is provided. In the temperature control unit T5 of Embodiment 5, as a temperature control mechanism embedded in the magnet plate MP, cooling water as a refrigerant circulates in the water passage WP. As a result, the bottom plate BP is cooled, and heat exchange is performed on the electrostatic chuck C via the high thermal conductivity sheet HT and the magnet MG.

[0156] The water-cooled temperature control structure can obtain a cost advantage by eliminating the temperature control member TM (and the power circuit unit for controlling the temperature control member TM) in a film-forming environment and a film-forming apparatus structure that do not require high responsiveness and fine adjustment.

[0157] In addition, as an additional structure, in order to improve the heat transfer between the temperature control member TM and the magnet plate MP, for example, a high thermal conductivity member may be disposed in the space between the plurality of magnets MG, and the temperature control member TM and the bottom plate BP may be connected via the high thermal conductivity member.

[0158] <Embodiment 6>

[0159] Refer to Figure 11 , and the temperature control unit T6 of Embodiment 6 of the present invention will be described. Figure 11 It is a schematic cross-sectional view for explaining the structure of the temperature control mechanism of Embodiment 6 of the present invention.

[0160] Here, in the structure of Embodiment 6, only the points different from the structures of Embodiments 1 to 5 will be described. In the structure of Embodiment 6, the same reference numerals are assigned to the structures that are the same as those in Embodiments 1 to 5, and the description thereof is omitted.

[0161] The temperature control unit T6 of Embodiment 6 is configured to include a radiator HS as a cooling mechanism replacing the temperature control member TM using a Peltier element and the cooling plate CP in the temperature control unit T of other embodiments. The radiator HS is disposed on the upper surface of the bottom plate BP of the magnet plate MP (the surface opposite to the facing surface facing the electrostatic chuck C).

[0162] The radiator HS has a plurality of protrusions on the surface opposite to the contact surface in contact with the bottom plate BP, and has a heat dissipation structure (radiator structure) in which the surface area of the uneven shape on the side provided with the protrusions is larger than the area of the contact surface. That is, the radiator HS is configured to dissipate the heat of the electrostatic chuck C transmitted to the contact surface in contact with the bottom plate BP on the uneven shape surface on the side opposite to the contact surface, thereby promoting the cooling of the electrostatic chuck C.

[0163] The specific structure of the heat dissipation shape portion of the radiator HS is not limited to a specific structure. As the shape of the protrusion of the heat dissipation shape portion, for example, it can be a plate-shaped protrusion, a columnar protrusion, or a protrusion of other shapes. Moreover, a plurality of protrusions having different shapes can also be combined.

[0164] The temperature control unit T6 of the present embodiment is particularly suitable for use in a film forming apparatus in which the heat storage based on evaporation is equal to or less than the heat dissipation from the magnet plate MP. That is, according to the film forming conditions, effective cooling can be achieved by a simple structure of adding the radiator HS only to the magnet plate MP of the temperature control unit T6 of the present embodiment.

[0165] In addition, as an additional structure, in order to improve the heat transfer between the temperature control member TM and the magnet plate MP, for example, a high heat conduction member can also be arranged in the space between the plurality of magnets MG, and the temperature control member TM and the bottom plate BP can be connected via the high heat conduction member.

[0166] The structures of the above-described Embodiments 1 to 6 can be arbitrarily combined with each other. In addition, in each embodiment, by applying a current in the opposite direction to the Peltier element, the cooling and heating of the temperature control object can be changed.

[0167] <Method for manufacturing an electronic device>

[0168] Next, an example of a method for manufacturing an electronic device using the film forming apparatus of the present embodiment will be described. Hereinafter, as an example of the electronic device, the structure of an organic EL display device will be shown, and the method for manufacturing the organic EL display device will be exemplified.

[0169] First, the manufactured organic EL display device will be described. Figure 12 (a) shows an overall view of the organic EL display device 700, Figure 12 (b) shows a cross-sectional structure of one pixel.

[0170] As Figure 12As shown in (a) of FIG. , in the display area 701 of the organic EL display device 700, a plurality of pixels 702 each having a plurality of light-emitting elements are arranged in a matrix. Each light-emitting element has a structure in which an organic layer is sandwiched between a pair of electrodes, and the details will be described later. In addition, the pixel here refers to the smallest unit that can display a desired color in the display area 701. In the case of the organic EL display device of this embodiment, the pixel 702 is constituted by a combination of a first light-emitting element 702R, a second light-emitting element 702G, and a third light-emitting element 702B that emit mutually different lights. Most of the pixels 702 are constituted by a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but may also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, and there is no particular limitation as long as it is at least one color or more.

[0171] Figure 12 (b) of FIG. Figure 12 is a partial cross-sectional schematic view taken along line B-B in (a) of FIG. . The pixel 702 is constituted by a plurality of light-emitting elements, and each light-emitting element has a first electrode (anode) 704, a hole transport layer 705, any one of light-emitting layers 706R, 706G, 706B, an electron transport layer 707, and a second electrode (cathode) 708 on a substrate 703. Among them, the hole transport layer 705, the light-emitting layers 706R, 706G, 706B, and the electron transport layer 707 correspond to the organic layer. In addition, in this embodiment, the light-emitting layer 706R is an organic EL layer that emits red light, the light-emitting layer 706G is an organic EL layer that emits green light, and the light-emitting layer 706B is an organic EL layer that emits blue light. The light-emitting layers 706R, 706G, 706B are respectively formed in patterns corresponding to light-emitting elements (sometimes also described as organic EL elements) that emit red, green, and blue light.

[0172] In addition, the first electrode 704 is formed separately for each light-emitting element. The hole transport layer 705, the electron transport layer 707, and the second electrode 708 may be formed in common among the plurality of light-emitting elements 702R, 702G, 702B, or may be formed for each light-emitting element. In addition, in order to prevent the first electrode 704 and the second electrode 708 from being short-circuited by foreign matters, an insulating layer 709 is provided between the first electrodes 704. Moreover, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 710 is provided to protect the organic EL element from the influence of moisture and oxygen.

[0173] In Figure 12In (b) thereof, the hole transport layer 705 and the electron transport layer 707 are represented by one layer, but depending on the structure of the organic EL display element, they may also be formed of multiple layers including a hole blocking layer and an electron blocking layer. In addition, a hole injection layer having an energy band structure capable of smoothly injecting holes from the first electrode 704 into the hole transport layer 705 may be formed between the first electrode 704 and the hole transport layer 705. Similarly, an electron injection layer may be formed between the second electrode 708 and the electron transport layer 707.

[0174] Next, an example of a method for manufacturing an organic EL display device will be specifically described.

[0175] First, prepare a substrate (mother glass) 703 on which a circuit (not shown) for driving the organic EL display device and the first electrode 704 are formed.

[0176] An acrylic resin is formed on the substrate 703 on which the first electrode 704 is formed by spin coating, and the acrylic resin is patterned by photolithography to form an insulating layer 709 in such a manner that an opening is formed in the portion where the first electrode 704 is formed. This opening corresponds to the light emitting region where the light emitting element actually emits light.

[0177] Place the substrate 703 on which the insulating layer 709 has been patterned on a substrate carrier provided with an adhesive member. Hold the substrate 703 using the adhesive member. After loading it into the first organic material film forming apparatus and flipping it, form the hole transport layer 705 as a common layer on the first electrode 704 in the display region. The hole transport layer 705 is formed by vacuum evaporation. In fact, since the hole transport layer 705 is formed to be larger than the display region 701, a high-precision mask is not required.

[0178] Next, transfer the substrate 703 on which the hole transport layer 705 has been formed to the second organic material film forming apparatus. Align the substrate with the mask, place the substrate on the mask, and form a red light emitting layer 706R in the portion of the substrate 703 where the element that emits red light is disposed.

[0179] Similar to the formation of the light emitting layer 706R, a green light emitting layer 706G is formed by the third organic material film forming apparatus, and then a blue light emitting layer 706B is formed by the fourth organic material film forming apparatus. After the formation of the light emitting layers 706R, 706G, and 706B is completed, an electron transport layer 707 is formed in the entire display region 701 by the fifth film forming apparatus. The electron transport layer 707 is formed as a common layer for the three-color light emitting layers 706R, 706G, and 706B.

[0180] Move the substrate on which the electron transport layer 707 has been formed in the metallic evaporation material film forming apparatus to form the second electrode 708.

[0181] Thereafter, it is moved to a plasma CVD apparatus to form a protective layer 710, thereby completing the film-forming process on the substrate 703. After flipping, the bonding member is peeled off from the substrate 703, whereby the substrate 703 is separated from the substrate carrier. Thereafter, the organic EL display device 700 is completed through cutting.

[0182] During the period from when the substrate 703 on which the insulating layer 709 has been patterned is loaded into the film-forming apparatus until the film formation of the protective layer 710 is completed, if it is exposed to an environment containing moisture and oxygen, the light-emitting layer made of an organic EL material may deteriorate due to moisture and oxygen. Therefore, in the present embodiment, the loading and unloading of the substrate between the film-forming apparatuses are performed in a vacuum environment or an inert gas environment.

[0183] Explanation of Reference Numerals

[0184] 1... Film-forming apparatus, S... Substrate, M... Mask, C... Electrostatic chuck, TM... Temperature-adjusting member, MP... Magnet plate, CP... Cooling plate.

Claims

1. A substrate holding device for a film forming apparatus that forms a film on a substrate, characterized in that, Comprising: An electrostatic chuck that adsorbs a substrate; And A temperature control member having a Peltier element for controlling the temperature of the electrostatic chuck.

2. The substrate holding device according to claim 1, wherein The substrate holding device further includes a temperature sensor for detecting the temperature of the electrostatic chuck.

3. The substrate holding device according to claim 2, wherein The substrate holding device further comprises: A current supply unit that causes current to flow through the Peltier element; and A control unit that controls the current flowing from the current supply unit to the Peltier element.

4. The substrate holding device according to claim 3, wherein The control unit controls the current flowing from the current supply unit to the Peltier element based on the detected temperature of the temperature sensor.

5. The substrate holding device according to claim 4, wherein The control unit controls the current flowing from the current supply unit to the Peltier element so that the heat of the electrostatic chuck is absorbed by the temperature control member.

6. The substrate holding device according to any one of claims 1 to 5, wherein The substrate holding device further includes a heat transfer member disposed between the electrostatic chuck and the temperature control member, The thermal conductivity of the heat transfer member is higher than that of the base material of the electrostatic chuck.

7. The substrate holding device according to claim 6, wherein The substrate holding device further includes a magnet that generates a magnetic force for attracting a mask toward the substrate, The temperature control member is mounted on the magnet, and controls the temperature of the electrostatic chuck via the magnet and the heat transfer member.

8. The substrate holding device according to claim 7, wherein The heat transfer member is disposed in contact with the surface of the electrostatic chuck opposite to the adsorption surface of the substrate, The magnet is configured to be able to obtain a first position in contact with the heat transfer member and a second position separated from the heat transfer member, When the magnet is in the first position, the temperature control member controls the temperature of the electrostatic chuck via the magnet and the heat transfer member.

9. The substrate holding device according to claim 7, wherein The heat transfer member is mounted on the magnet, The magnet is configured to be able to obtain a first position where the heat transfer member is separated from the surface of the electrostatic chuck opposite to the adsorption surface of the substrate and a second position where the heat transfer member is in contact with the opposite surface, When the magnet is in the second position, the temperature control member controls the temperature of the electrostatic chuck via the magnet and the heat transfer member.

10. The substrate holding device according to claim 7, wherein The magnet has a cooling pipe through which a refrigerant flows.

11. The substrate holding device according to any one of claims 3 to 5, wherein The temperature control member is disposed in contact with the surface of the electrostatic chuck opposite to the adsorption surface of the substrate.

12. The substrate holding device according to claim 11, wherein There are a plurality of the temperature control members, A plurality of the temperature adjusting members are arranged corresponding to a plurality of divided regions obtained by dividing the surface on the opposite side.

13. The substrate holding device according to claim 12, characterized in that: It includes a plurality of the temperature sensors, and the plurality of the temperature sensors are arranged corresponding to the plurality of divided regions.

14. The substrate holding device according to claim 13, characterized in that: Based on the temperatures detected by the plurality of the temperature sensors, the control unit individually controls the current flowing through the Peltier elements respectively provided in the plurality of the temperature adjusting members by the current supply unit.

15. The substrate holding device according to any one of claims 1 to 5, characterized in that: The electrostatic chuck has a plate-shaped base material and electrodes embedded in the base material.

16. A film forming device, the film forming device includes: a chamber; an evaporation source provided in the chamber; an electrostatic chuck provided in the chamber for adsorbing a substrate; and a mask that engages with the surface to be film formed of the substrate adsorbed on the electrostatic chuck. The film forming device is characterized by including: a temperature adjusting member having a Peltier element for controlling the temperature of the electrostatic chuck; a temperature sensor for detecting the temperature of the electrostatic chuck; a current supply unit for passing a current through the Peltier element; and a control unit for controlling the current flowing through the Peltier element by the current supply unit based on the detected temperature of the temperature sensor.

17. A film forming apparatus, the film forming apparatus comprising: a first film forming chamber, the first film forming chamber including a first chamber, a first evaporation source, a first electrostatic chuck, a first mask, a first alignment mechanism, a first temperature control member, a first temperature sensor, and a first current supply unit, the first evaporation source being disposed in the first chamber, the first electrostatic chuck being disposed in the first chamber for adsorbing a substrate, the first mask being joined to a film forming surface of the substrate adsorbed to the first electrostatic chuck, the first alignment mechanism aligning the substrate adsorbed to the first electrostatic chuck and the first mask, the first temperature control member including a first Peltier element for controlling the temperature of the first electrostatic chuck, the first temperature sensor detecting the temperature of the first electrostatic chuck, and the first current supply unit causing current to flow through the first Peltier element; A second film forming chamber for film forming the substrate that has been film formed in the first film forming chamber. The second film forming chamber includes a second chamber, a second evaporation source, a second electrostatic chuck, a second mask, a second alignment mechanism, and a second temperature sensor. The second evaporation source is provided in the second chamber, the second electrostatic chuck is provided in the second chamber for adsorbing a substrate, the second mask engages with the surface to be film formed of the substrate adsorbed on the second electrostatic chuck, the second alignment mechanism aligns the substrate adsorbed on the second electrostatic chuck and the second mask, and the second temperature sensor detects the temperature of the second mask; and a control unit for controlling the current flowing through the first Peltier element by the first current supply unit. The film forming device is characterized in that: The control unit controls the current flowing through the first Peltier element by the first current supply unit based on the detected temperature of the first temperature sensor and the detected temperature of the second temperature sensor.

18. The film forming device according to claim 17, characterized in that: The control unit controls the current flowing through the first Peltier element by the first current supply unit so that the detected temperature of the first temperature sensor is close to the detected temperature of the second temperature sensor.

19. The film forming apparatus according to claim 17 or 18, characterized in that, The second film forming chamber further includes: a second temperature adjusting member having a second Peltier element for controlling the temperature of the second electrostatic chuck; a third temperature sensor for detecting the temperature of the second electrostatic chuck; and a second current supply unit that causes current to flow through the second Peltier element The control unit controls the current flowing from the second current supply unit to the second Peltier element based on the detected temperature of the third temperature sensor.

20. A control method for a film forming apparatus, which is a temperature adjustment method for a film forming apparatus, the film forming apparatus including: a chamber; an evaporation source disposed in the chamber; an electrostatic chuck disposed in the chamber for adsorbing a substrate; and a mask that is joined to a film forming surface of the substrate adsorbed to the electrostatic chuck. The control method for the film forming apparatus is characterized in that a temperature adjustment member, a current supply unit, and a temperature sensor are provided. The temperature adjustment member includes a Peltier element for controlling the temperature of the electrostatic chuck. The current supply unit causes current to flow through the Peltier element. The temperature sensor detects the temperature of the electrostatic chuck The control method for the film forming apparatus controls the current flowing from the current supply unit to the Peltier element based on the detected temperature of the temperature sensor.

21. A control method for a film forming apparatus, the film forming apparatus including: a first film forming chamber having a first chamber, a first evaporation source, a first electrostatic chuck, a first mask, a first alignment mechanism, a first temperature adjustment member, a first temperature sensor, and a first current supply unit. The first evaporation source is disposed in the first chamber. The first electrostatic chuck is disposed in the first chamber for adsorbing a substrate. The first mask is joined to a film forming surface of the substrate adsorbed to the first electrostatic chuck. The first alignment mechanism aligns the substrate adsorbed to the first electrostatic chuck and the first mask. The first temperature adjustment member includes a first Peltier element for controlling the temperature of the first electrostatic chuck. The first temperature sensor detects the temperature of the first electrostatic chuck. The first current supply unit causes current to flow through the first Peltier element; and a second film forming chamber that forms a film on the substrate that has been formed with a film in the first film forming chamber. The second film forming chamber includes a second chamber, a second evaporation source, a second electrostatic chuck, a second mask, a second alignment mechanism, and a second temperature sensor. The second evaporation source is disposed in the second chamber. The second electrostatic chuck is disposed in the second chamber for adsorbing a substrate. The second mask is joined to a film forming surface of the substrate adsorbed to the second electrostatic chuck. The second alignment mechanism aligns the substrate adsorbed to the second electrostatic chuck and the second mask. The second temperature sensor detects the temperature of the second mask. The control method for the film forming apparatus is characterized in that the current flowing from the first current supply unit to the first Peltier element is controlled based on the detected temperature of the first temperature sensor and the detected temperature of the second temperature sensor

Images