Plasma processing device

Abstract

In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support, an upper electrode, a first insulating member, and a shielding member. The chamber is electrically grounded and provides a plasma processing space. The upper electrode is a portion of a top disposed above the plasma processing space, thereby closing the opening of the chamber. The first insulating member is a portion of the top disposed between the upper electrode and the chamber to electrically separate the upper electrode from the chamber. The shielding member is another portion of the top, is conductive, formed of a silicon-containing material, and extends from the periphery of the upper electrode into the chamber. The portion of the top exposed to the plasma processing space is composed of a conductor including the upper electrode and the shielding member.

Description

Technical Field

[0001] Embodiments of the present invention relate to plasma processing apparatus. Background Technology

[0002] A plasma processing apparatus is used to perform plasma processing on a substrate. The plasma processing apparatus disclosed in Patent Document 1 includes a processing container, an upper electrode, and a shielding component. The upper electrode seals the opening at the top of the processing container via an insulating shielding component. The upper electrode includes an inner electrode plate disposed within the processing container and an outer electrode plate disposed outside the inner electrode plate. A flow path for gas flow is formed in the gap between the inner and outer electrode plates.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent document 1: Japanese Patent Application Publication No. 2021-077808. Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This invention provides a technique for inhibiting the adhesion of reaction products to parts exposed in the plasma processing space.

[0008] Technical means for solving problems

[0009] In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support, an upper electrode, a first insulating member, and a shielding member. The chamber is electrically grounded and provides a plasma processing space. The substrate support is disposed within the chamber and configured to support a substrate. The upper electrode is a portion of the top disposed above the plasma processing space, closing the opening of the chamber, configured to apply high-frequency electrical power, and disposed above the substrate support. The first insulating member is a portion of the top disposed between the upper electrode and the chamber to electrically separate the upper electrode from the chamber. The shielding member is another portion of the top, is conductive, formed of a silicon-containing material, and extends from the periphery of the upper electrode into the chamber. The portion of the top exposed to the plasma processing space is composed of a conductor including the upper electrode and the shielding member.

[0010] Invention Effects

[0011] According to the present invention, it is possible to suppress the adhesion of reaction products to parts exposed in the plasma processing space. Attached Figure Description

[0012] Figure 1 This is a diagram illustrating a structural example of a plasma processing system.

[0013] Figure 2 This is a diagram illustrating a structural example of a capacitively coupled plasma processing device.

[0014] Figure 3 This is a diagram illustrating a plasma processing apparatus of an exemplary embodiment.

[0015] Figure 4 It is a graph showing the change in the real part (resistance value) of the load impedance of the high-frequency power supply corresponding to the power level of the high-frequency electrical power supplied to the upper electrode.

[0016] Figure 5 It is a graph showing the relationship between plasma density and the real part (resistance value) of the impedance of the load of the high-frequency power supply.

[0017] Figure 6 This is a diagram illustrating a plasma processing apparatus for other exemplary embodiments.

[0018] Figure 7 This is a block diagram of a processing circuit that performs the actions described in this manual on a computer. Detailed Implementation

[0019] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. Furthermore, in each drawing, the same or equivalent parts are labeled with the same reference numerals.

[0020] Figure 1 This is a diagram illustrating a structural example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. Furthermore, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to the gas supply unit 20 (described later), and the gas outlet is connected to the exhaust system 40 (described later). The substrate support 11 is disposed within the plasma processing space and has a substrate support surface for supporting a substrate.

[0021] The plasma generation unit 12 is configured to generate plasma from at least one process gas supplied to the plasma processing space. The plasma generated in the plasma processing space can be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR), helicon wave plasma (HWP), or surface wave plasma (SWP), etc. Furthermore, various types of plasma generation units, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units, can also be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes RF (Radio Frequency) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0022] The control unit 2 processes computer-executable commands that cause the plasma processing apparatus 1 to perform the various steps described herein. The control unit 2 is configured to control the various elements of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control actions by reading a program from the storage unit 2a2 and executing the read program. The program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The retrieved program is stored in the storage unit 2a2 and read and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may also communicate with the plasma processing device 1 via a communication line such as LAN (Local Area Network).

[0023] Hereinafter, a structural example of a capacitively coupled plasma processing device, which is one example of plasma processing device 1, will be described. Figure 2 This is a diagram illustrating a structural example of a capacitively coupled plasma processing device.

[0024] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. Additionally, the plasma processing apparatus 1 includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a spray head 13. The substrate support 11 is disposed within the plasma processing chamber 10. The spray head 13 is disposed above the substrate support 11. In one embodiment, the spray head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the spray head 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The spray head 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0025] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 when viewed from above. The substrate W is disposed on the central region 111a of the main body portion 111, and the ring assembly 112 is disposed on the annular region 111b of the main body portion 111 in such a way that it surrounds the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as an annular support surface for supporting the ring assembly 112.

[0026] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode 1111b disposed within the ceramic component 1111a. The ceramic component 1111a has a central region 111a. In one embodiment, the ceramic component 1111a also has an annular region 111b. Furthermore, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating component, may also have an annular region 111b. In this case, the ring assembly 112 may be disposed on either the annular electrostatic chuck or the annular insulating component, or on both the electrostatic chuck 1111 and the annular insulating component. Furthermore, at least one RF / DC electrode coupled to the RF power supply 31 and / or DC power supply 32 (described later) can be disposed within the ceramic component 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When the bias RF signal and / or DC signal (described later) are supplied to the at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. The conductive components of the base 1110 and the at least one RF / DC electrode function as multiple lower electrodes. Additionally, the electrostatic electrode 1111b can also function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0027] The ring assembly 112 includes one or more annular components. In one embodiment, the one or more annular components include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0028] Additionally, the substrate support 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows in the flow path 1110a. In one embodiment, the flow path 1110a is formed within the base 1110, and one or more heaters are disposed within the ceramic component 1111a of the electrostatic chuck 1111. Furthermore, the substrate support 11 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0029] The spray head 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The spray head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlets 13c. The process gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s through the gas diffusion chamber 13b and the plurality of gas inlets 13c. Additionally, the spray head 13 includes at least one upper electrode. Furthermore, in addition to the spray head 13, the gas inlet unit may also include one or more side gas injectors (SGIs) mounted on one or more openings formed in the sidewall 10a.

[0030] The gas supply unit 20 may also include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one type of process gas from a corresponding gas source 21 to the spray head 13 via a corresponding flow controller 22. Each flow controller 22 may, for example, include a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may also include at least one flow modulation device for modulating or pulsed the flow rate of the at least one type of process gas.

[0031] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This allows plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to at least one lower electrode, a bias potential can be generated on the substrate W, introducing ionic components from the formed plasma into the substrate W.

[0032] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a generation source RF signal (generation source RF power) for plasma generation. In one embodiment, the generation source RF signal has a frequency in the range of 10MHz to 150MHz. In one embodiment, the first RF generation unit 31a may also be configured to generate multiple generation source RF signals with different frequencies. The generated one or more generation source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0033] The second RF generation unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b is configured to generate multiple bias RF signals with different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Furthermore, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0034] Furthermore, the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is connected to at least one lower electrode and is configured to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generating unit 32b is connected to at least one upper electrode and is configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0035] In various embodiments, the first and second DC signals can also be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses can have rectangular, trapezoidal, triangular, or combinations thereof pulse waveforms. In one embodiment, a waveform generation unit for generating a sequence of voltage pulses from the DC signals is connected between the first DC generation unit 32a and at least one lower electrode. Therefore, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses can have positive or negative polarity. In addition, the sequence of voltage pulses can also include one or more positive voltage pulses and one or more negative voltage pulses in one cycle. Furthermore, the first and second DC generation units 32a and 32b can be provided in addition to the RF power supply 31, or the first DC generation unit 32a can be provided instead of the second RF generation unit 31b.

[0036] The exhaust system 40 can be connected, for example, to a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may also include a pressure regulating valve and a vacuum pump. The pressure regulating valve can be used to regulate the pressure within the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0037] The following is for reference Figure 2 and Figure 3 An exemplary embodiment of a plasma processing apparatus will be described. Figure 3 This indicates that it is set in Figure 2 A diagram showing the upper electrode and shielding components of the plasma processing device.

[0038] like Figure 3 As shown, the sidewall 10a of the plasma processing chamber 10 has a generally cylindrical shape. The sidewall 10a is grounded, and its potential is set to the ground potential. The upper end of the sidewall 10a is open.

[0039] The plasma processing apparatus 1 has a top 14 above the plasma processing space 10s. The top 14 is arranged to close the opening of the plasma processing chamber 10. That is, the top 14 covers and closes the opening at the upper end of the sidewall 10a. A portion of the top 14 is exposed outside the plasma processing space 10s.

[0040] The spray head 13, which forms part of the top 14, includes at least one upper electrode 13d. The upper electrode 13d, being part of the top 14, is configured to apply high-frequency electrical power and is disposed above the substrate support 11. The upper electrode 13d is, for example, electrically connected to a first RF generation unit 31a. The first RF generation unit 31a is an example of a high-frequency power supply.

[0041] The upper electrode 13d includes a top plate 13e and a first support 13f. The top plate 13e has a generally disk-shaped form. The top plate 13e is in contact with the plasma processing space 10s. The top plate 13e is formed of a conductive material such as silicon, alumina, or quartz. Alternatively, the top plate 13e can also be constructed by forming a corrosion-resistant film on the surface of a conductive component such as aluminum. The corrosion-resistant film is formed, for example, from alumina or yttrium oxide.

[0042] A first support 13f is disposed on a top plate 13e. The first support 13f supports the top plate 13e in a detachable manner. The first support 13f is formed, for example, of aluminum. The first support 13f provides at least one gas diffusion chamber 13b therein. The first support 13f, together with the top plate 13e, provides at least one gas inlet 13c. The at least one gas inlet 13c extends downward from the at least one gas diffusion chamber 13b and penetrates the top plate 13e.

[0043] The top 14 also includes a first insulating member 41. The first insulating member 41 is part of the top 14. The first insulating member 41 is disposed between the upper electrode 13d and the plasma processing chamber 10. The first insulating member 41 electrically separates the upper electrode 13d from the plasma processing chamber 10. The first insulating member 41 is disposed on the outer side of the upper electrode 13d (side wall 10a side). The first insulating member 41 has a generally annular shape and extends circumferentially to surround the upper electrode 13d. The first insulating member 41 is formed of an insulator such as quartz.

[0044] The top 14 also includes a shielding member 42. The shielding member 42 is another part of the top 14 and is conductive. The shielding member 42 is formed, for example, of a silicon-containing material. The shielding member 42 extends from the periphery of the upper electrode 13d to the plasma processing chamber 10. The shielding member 42 extends circumferentially, surrounding the periphery of the top plate 13e. The shielding member 42 is, for example, generally annular. The shielding member 42 is electrically floating. That is, the shielding member 42 has a floating potential different from the potential of the upper electrode 13d and the potential of the plasma processing chamber 10.

[0045] The portion of the top 14 exposed to the plasma processing space 10s is composed of a conductor including the upper electrode 13d and the shielding member 42. For example, the portion of the top 14 exposed to the plasma processing space 10s may be composed solely of a conductor. Hereinafter, the portion of the top 14 exposed to the plasma processing space 10s will be referred to as the "exposed portion of the top 14". Figure 3 In the example shown, the exposed portion of the top 14 consists only of the upper electrode 13d (or top plate 13e) and the shielding member 42. The shielding member 42 is, for example, disposed below the first insulating member 41. The shielding member 42 extends in such a manner that the first insulating member 41 is not exposed to the plasma processing space 10s. Figure 3 In the example shown, the shielding member 42 is disposed below a portion of the first support 13f, the first insulating member 41, and a portion of the second support 43, which will be described later.

[0046] In the plasma processing apparatus 1, the entire exposed area of ​​the top 14 is formed of a conductive material. Therefore, reaction products adhering to this exposed area can be removed by electrical bias during dry cleaning. As a result, it is possible to suppress the adhesion of reaction products as particles to the substrate W.

[0047] The plasma processing chamber 10 may further include a second support 43. The second support 43 is disposed outside the first insulating member 41 and above the shielding member 42. A small gap is provided between the second support 43 and the shielding member 42. The second support 43 is disposed on the side wall 10a of the plasma processing chamber 10. The second support 43 is electrically connected to the side wall 10a of the plasma processing chamber 10. The potential of the second support 43 is set to ground potential. The first insulating member 41 is disposed between the first support 13f of the upper electrode 13d and the second support 43. The second support 43 has a generally annular shape and extends circumferentially to surround the first insulating member 41. The second support 43 is formed of a metal such as aluminum.

[0048] The plasma processing apparatus 1 further includes at least one second insulating member 44. The at least one second insulating member 44 is disposed outside the first insulating member 41 and on the shielding member 42. The at least one second insulating member 44 is located between the plasma processing chamber 10 and the shielding member 42. Figure 3 In the example shown, at least one second insulating member 44 is disposed such that its lower surface contacts the upper surface of the outer side of the shielding member 42. At least one second insulating member 44 is disposed between the shielding member 42 and the second support 43. At least one second insulating member 44 is, for example, a plate-shaped member having a generally annular shape. At least one second insulating member 44 is formed of an insulating material such as insulating ceramic, quartz, or metal oxide.

[0049] The plasma processing apparatus 1 further includes at least one third insulating member 45. The at least one third insulating member 45 is disposed below the shielding member 42. The at least one third insulating member 45 is located between the plasma processing chamber 10 and the shielding member 42. The shielding member 42 is supported between at least one second insulating member 44 and at least one third insulating member 45.

[0050] exist Figure 3 In the example shown, at least one third insulating component 45 includes a third support 45a and a sealing component 45b. The third support 45a is disposed on the sidewall 10a. The third support 45a supports the shielding component 42 from below. A portion of the inner side of the third support 45a is exposed below the top 14 into the plasma processing space 10s. The sealing component 45b is disposed between the shielding component 42 and the third support 45a. The sealing component 45b is configured to contact the outer portions of the shielding component 42 and the outer portions of the third support 45a. The sealing component 45b is, for example, an O-ring that separates the depressurized environment containing the plasma processing space 10s from the atmospheric pressure environment.

[0051] Consider a first path (without plasma) and a second path (with plasma) for the current flowing through the high-frequency electrical power supplied to the upper electrode 13d. In the first path, the current flows from the upper electrode 13d to the sidewall 10a via the shielding member 42, at least one second insulating member 44, and the second support 43. In the second path, the current flows from the upper electrode 13d to the sidewall 10a via the plasma in the plasma processing space 10s. The at least one second insulating member 44 reduces the electrostatic capacitance between the shielding member 42 and the second support 43, increasing the impedance of the first path. The high-frequency electrical power supplied to the upper electrode 13d is efficiently coupled via the plasma in the plasma processing space 10s. Furthermore, the high-frequency electrical power supplied to the upper electrode 13d is also coupled more efficiently with the plasma below the shielding member 42.

[0052] Whether the high-frequency electrical power is efficiently coupled through the plasma in the plasma processing space of the second path for 10 seconds can be determined by the variation in the impedance circuit (matching device) installed in the power supply 30. When the high-frequency electrical power is coupled more efficiently to the plasma, the resistance value identified by the impedance circuit increases accordingly with an increase in plasma density, and decreases accordingly with a decrease in plasma density. Here, the resistance value refers to the real part of the load impedance identified in the impedance circuit.

[0053] The following is for reference Figure 4 . Figure 4This is a graph showing the change in the real part (resistance value) of the load impedance of the high-frequency power supply corresponding to the power level of the high-frequency electrical power supplied to the upper electrode. Figure 4 In the graph shown, the horizontal axis is the power level (W) of the high-frequency electrical power supplied to the upper electrode 13d, and the vertical axis is the real part of the impedance of the load of the high-frequency power supply (first RF generation unit 31a), i.e., the resistance value (Ω). Figure 4 The horizontal axis moves from left to right, and the power level (W) of high-frequency electrical power increases. Figure 4 The characteristics shown in the graph were obtained with a 5mm thick second insulating member 44 disposed between the shielding member 42 and the second support 43. The second insulating member 44 is a quartz component. The gap between the upper electrode 13d and the shielding member 42 is 0.5mm. Figure 4 The graph shown represents the resistance value when the power level of the high-frequency electrical power is changed. Furthermore, the impedance and real part (resistance value) of the load of the high-frequency power supply (first RF generation unit 31a) are identified in a matching unit connected between the high-frequency power supply and the upper electrode 31d.

[0054] like Figure 4 As shown, the real part of the load impedance of the high-frequency power supply, i.e., the resistance value, increases with the increase of the high-frequency power level. Furthermore, this resistance value changes linearly with the increase of the high-frequency power level. This indicates that the high-frequency power is efficiently coupled to the plasma.

[0055] Figure 5 This is a graph showing the relationship between plasma density and the real part (resistance value) of the impedance of the high-frequency power supply load. Figure 5 In the graph shown, the horizontal axis represents the plasma density (S / m), and the vertical axis represents the real part of the impedance of the load of the high-frequency power supply (first RF generation unit 31a), i.e., the resistance value (Ω). Figure 5 The horizontal axis moves from left to right, and the plasma density (S / m) increases. Figure 5 The measurements represent the results when the thickness of the second insulating component 44 is set to 5 mm, 10 mm, 15 mm, 20 mm, and 35 mm, respectively.

[0056] like Figure 5 As shown, during plasma generation, the real part of the impedance of the high-frequency power supply load, i.e., the resistance value, decreases with increasing plasma density. This result indicates that the plasma density can be determined based on this resistance value, and thus, the plasma density can be controlled based on this resistance value. Furthermore, as... Figure 5As shown, the greater the thickness of the second insulating member 44, the greater the magnitude of the change in resistance value with respect to changes in plasma density. This indicates that by using a second insulating member 44 with a large thickness, it is easier to capture changes in plasma density and to control plasma density more easily.

[0057] The above description illustrates various illustrative embodiments, but the embodiments are not limited to those described above, and various additions, omissions, substitutions, and modifications can be made. Furthermore, elements from different embodiments can be combined to form other embodiments. For example, at least one of the upper electrode 13d and the shielding member 42 can be electrically connected to the second DC generating unit 32b. The second DC generating unit 32b is an example of a DC power supply.

[0058] The following is for reference Figure 6 Other exemplary embodiments of plasma processing apparatus used in plasma processing apparatus will be described. Figure 6 This is a diagram illustrating a plasma processing apparatus of another exemplary embodiment. Figure 6 The plasma processing apparatus 1A shown in the exemplary embodiment differs from plasma processing apparatus 1 in that the first insulating member 41A has a first insulating portion 46 and a second insulating portion 47. That is, the difference is that plasma processing apparatus 1A does not include the second insulating member 44 of plasma processing apparatus 1.

[0059] The top 14 includes a first insulating member 41A. The first insulating member 41A is a part of the top 14. The first insulating member 41A is formed of an insulator such as quartz. A first insulating portion 46 of the first insulating member 41A is disposed between the upper electrode 13d and the plasma processing chamber 10. The first insulating portion 46 electrically separates the upper electrode 13d from the plasma processing chamber 10. The first insulating portion 46 is disposed on the outer side of the upper electrode 13d (side wall 10a side). The first insulating portion 46 has a generally annular shape and extends circumferentially to surround the upper electrode 13d.

[0060] The second insulating portion 47 is disposed outside the first insulating portion 46 and on the shielding member 42. The second insulating portion 47 has, for example, a generally annular shape and extends circumferentially to surround the first insulating portion 46. The second insulating portion 47 extends outwardly from the lower end of the first insulating portion 46. The second insulating portion 47 is located between the plasma processing chamber 10 and the shielding member 42. Figure 6 In the example shown, the second insulating portion 47 is arranged such that its lower surface contacts the upper surface of the outer side of the shielding member 42. The second insulating portion 47 is disposed between the shielding member 42 and the second support 43.

[0061] Thus, in the plasma processing apparatus 1A, the first insulating member 41A, having a first insulating portion 46 and a second insulating portion 47, is located between the upper electrode 13d and the plasma processing chamber 10, and between the plasma processing chamber 10 and the shielding member 42. This reduces the number of components used for current insulation and decreases the operating time when installing the plasma processing apparatus 1A.

[0062] Additionally, a DC connection portion 48 is provided within the second support body 43. The DC connection portion 48 extends from the interior of the second support body 43 through the second insulating portion 47 and connects to the outer portion of the shielding member 42. The outer portion of the shielding member 42 is, for example, the radially outer portion of the shielding member 42, a portion not exposed to the plasma processing space 10s. The outer portion of the shielding member 42 may also be the periphery of the shielding member 42. The outer portion of the shielding member 42 is supported by being sandwiched between the lower end of the DC connection portion 48 and at least one third insulating member 45. For example, the lower end of the DC connection portion 48 is positioned circumferentially directly above the sealing member 45b of at least one third insulating member 45. The shielding member 42 in the plasma processing apparatus 1A may also be non-electro-floating.

[0063] The second DC signal generated by the second DC generation unit 32b is applied to the shielding member 42 via the DC connection unit 48. The second DC generation unit 32b generates a signal with a frequency of, for example, 400 kHz as the second DC signal and supplies it to the shielding member 42 via the DC connection unit 48. At this time, for example, the first RF generation unit 31a can also generate a signal with a frequency of, for example, 100 MHz as a generation source RF signal and supply it to the upper electrode 13d. Furthermore, at this time, the second RF generation unit 31b can also generate a signal with a frequency of, for example, 13 MHz as a bias RF generation signal and supply it to the lower electrode. In this way, even when the DC connection unit 48 is located outside the first insulating member 41A, the second DC signal can be appropriately applied to the shielding member 42 by connecting it to the shielding member 42 through the second insulating portion 47 via the DC connection unit 48.

[0064] Furthermore, the inner wall portion 10t on the inner side of the sidewall 10a facing the plasma processing space 10s is formed of silicon. The inner wall portion 10t can serve as a counter electrode opposite to the shielding member 42. At least a portion of the current applied to the shielding member 42 flows to the sidewall 10a via the plasma in the plasma processing space 10s and the inner wall portion 10t. Thus, because the inner wall portion 10t is formed of silicon, it is not necessary to separately configure other components (devices) as counter electrodes within the plasma processing space 10s. Therefore, the operating time when installing the plasma processing apparatus 1A can be reduced.

[0065] Hereinafter, examples of processing circuits that can be used as one or more processing circuits in a plasma processing device 1 such as the control unit 2 will be described. Figure 7 This is a block diagram of a processing circuit that performs the actions described in this manual on a computer. Figure 7 The diagram illustrates a processing circuit 130 capable of controlling control processes on any computer. Descriptions or blocks in the flowchart represent portions of modules, segments, or code that include one or more executable commands for implementing specific logical functions or steps of the processing. As will be understood by those skilled in the art, other embodiments having functions capable of being executed in a sequence different from that illustrated or described, such as substantially simultaneous or reversed order, are also included within the scope of the illustrative embodiments of the invention, depending on the associated functions. The various elements, features, and processes described in this specification can be used independently of each other or in combination in various ways. Any combination and partial combination that can be conceived is included within the scope of the invention.

[0066] exist Figure 7 In this embodiment, the processing circuit 130 includes a CPU 1200 that implements one or more control processes described above / below. Processing data and commands can be stored in a memory 1202. These processing data and commands can be stored in a storage medium such as a hard disk drive (HDD), portable storage medium, or a disk 1204, or can be stored remotely. Furthermore, the present invention described in this technical solution is not limited to the form of a computer-readable medium storing the processing commands of the present invention. For example, these commands can also be stored in any other information processing device such as a CD, DVD, flash memory, RAM, ROM, PROM, EPROM, EEPROM, hard disk, or a server and / or computer that communicates with the processing circuit 130.

[0067] Furthermore, the present invention described in the technical solution can be provided as a utility application, a background daemon, a component of an operating system, or a combination thereof, and can also be executed in conjunction with CPU1200 and operating systems known to those skilled in the art, such as Microsoft Windows, UNIX, Solaris, LINUX, and Apple MAC-OS.

[0068] The hardware elements for constructing the processing circuit 130 can be implemented using various circuit elements. Furthermore, the functions of each of the above-described embodiments can be implemented using a circuit that includes one or more processing circuits. For example... Figure 7 As shown, the processing circuit includes a processing device such as a processing device (CPU) 1200 having a specific program. The processing circuit also includes devices such as application-specific integrated circuits (ASICs) and conventional circuit components configured to perform the functions described above.

[0069] exist Figure 7 In this embodiment, the processing circuit 130 includes a CPU 1200 that performs the above-described processing. The processing circuit 130 can be a general-purpose computer or a specific special-purpose machine. In one embodiment, the processing device 1200 is programmed to control the plasma generation unit 12 and the gas supply unit 20 (especially in the case of implementing...). Figures 1 to 6 In any of the processing described herein, the processing circuit 130 functions as a specific dedicated machine.

[0070] Alternatively, as those skilled in the art will understand, the CPU 1200 can also be mounted on an FPGA, ASIC, PLD, or discrete logic circuit. Furthermore, the CPU 1200 can also be implemented as multiple processing devices that cooperate in a manner that executes the processes of the present invention described above in parallel.

[0071] Figure 7 The processing circuitry 130 also includes a network controller 1206 for interface connection with network 1228, such as the Intel Ethernet PRO network interface card from Intel Corporation. As will be understood, network 1228 can be a public network such as the Internet, a private network such as a LAN or WAN, or any combination thereof, and can include subnetworks such as PSTN or ISDN. Network 1228 can also be wired, such as an Ethernet network, or wireless, such as a cellular network including EDGE, 3G, or 4G wireless cellular systems. Wireless networks can also be Wi-Fi, Bluetooth, or any other known wireless communication method.

[0072] The processing circuitry 130 also includes a display device controller 1208, such as a graphics card or graphics adapter, for interfacing with a display device 1210, such as a monitor. A general-purpose I / O interface 1212 interfaces with a keyboard and / or mouse 1214, and a touch panel 1216 integrated with or separate from the display device 1210. The general-purpose I / O interface also connects to various peripheral devices 1218, such as printers and scanners.

[0073] The storage device controller 1224 is connected to the storage medium disk 1204 via a communication bus 1226 such as ISA, EISA, VESA, or PCI. All components of the processing circuit 130 are interconnected. Regarding the general features and functions of the display device 1210, keyboard and / or mouse 1214, display device controller 1208, storage device controller 1224, network controller 1206, sound controller 1220, and general-purpose I / O interface 1212, known features and functions are used in this specification for simplicity, and descriptions are omitted.

[0074] The exemplary circuit elements described in this specification can be substituted with other elements and may have a different configuration than the examples described in this specification. Furthermore, circuits configured to implement the features described in this specification can be implemented by multiple circuit units (e.g., chips), or these features can be incorporated into the circuitry of a single chipset.

[0075] The functions and features described in this specification can also be performed by various components distributed across the system. For example, more than one processing device may perform the functions of the system, in which case the processing device is distributed across multiple components communicating within the network. As components of a distributed configuration, in addition to various human-machine interfaces and communication devices (display monitors, smartphones, tablets, personal digital assistants (PDAs), etc.), more than one client device and server device capable of sharing processing may also be included. The network can be a private network such as a LAN or WAN, or a public network such as the Internet. Input to the system can be received by direct user input, or it can be received remotely in real time or as a batch process. Furthermore, a portion of the embodiments can be implemented on different modules or hardware than those described above. Therefore, other embodiments are also included within the scope of the technical solution.

[0076] Hereinafter, various exemplary embodiments of the present invention are described in [E1] to [E9].

[0077] [E1]

[0078] A plasma processing apparatus comprising:

[0079] The chamber, electrically grounded, provides space for plasma processing.

[0080] A substrate support portion is disposed within the cavity and configured to support the substrate;

[0081] The upper electrode, which is a top portion disposed above the plasma processing space in a manner that closes the opening of the chamber, is configured to apply high-frequency electrical power and is disposed above the substrate support portion;

[0082] A first insulating component, which is part of the top, is disposed between the upper electrode and the chamber in a manner that electrically isolates the upper electrode from the chamber; and

[0083] A shielding component, which is another part of the top, is conductive, formed of a silicon-containing material, and extends from the periphery of the upper electrode to the chamber.

[0084] The portion of the top exposed in the plasma processing space is composed of a conductor containing the upper electrode and the shielding component.

[0085] [E2]

[0086] According to the plasma processing apparatus described in [E1], wherein,

[0087] It also includes at least one second insulating component, which is disposed outside the first insulating component in such a manner as to be located between the chamber and the shielding component, and is disposed on the shielding component.

[0088] [E3]

[0089] According to the plasma processing apparatus described in [E2], wherein,

[0090] It also includes at least one third insulating component disposed below the shielding component in a manner located between the chamber and the shielding component, supporting the shielding component between the at least one second insulating component and the at least one third insulating component.

[0091] [E4]

[0092] According to the plasma processing apparatus described in [E3], wherein,

[0093] The at least one third insulating component is formed of insulating ceramic, quartz, or metal oxide.

[0094] [E5]

[0095] According to the plasma processing apparatus described in [E1], wherein,

[0096] The first insulating component has:

[0097] A first insulating portion is disposed between the upper electrode and the chamber; and

[0098] The second insulating portion is disposed outside the first insulating portion in a manner located between the chamber and the shielding member, and is disposed on the shielding member.

[0099] [E6]

[0100] According to the plasma processing apparatus described in [E5], wherein,

[0101] It also includes at least one other insulating component disposed below the shielding component in a manner located between the chamber and the shielding component, supporting the shielding component between the second insulating portion of the first insulating component and the at least one other insulating component.

[0102] [E7]

[0103] According to the plasma processing apparatus described in [E6], wherein,

[0104] The at least one other insulating component is formed of insulating ceramic, quartz, or metal oxide.

[0105] [E8]

[0106] The plasma processing apparatus according to any one of [E1] to [E7], wherein,

[0107] It also includes a DC power supply electrically connected to at least one of the upper electrode and the shielding component.

[0108] [E9]

[0109] The plasma processing apparatus according to any one of [E1] to [E7], wherein,

[0110] The shielding component is electrically levitated.

[0111] [E10]

[0112] The plasma processing apparatus according to any one of [E1] to [E9], wherein,

[0113] It also includes a high-frequency power supply, which is configured to generate the high-frequency electrical power and is electrically connected to the upper electrode.

[0114] Based on the above description, it should be understood that various embodiments of the present invention have been described in this specification for illustrative purposes, and various changes can be made without departing from the scope and spirit of the invention. Therefore, the various embodiments described in this specification are not intended to limit the invention; the true scope and spirit are shown in the technical solutions.

[0115] Explanation of reference numerals in the attached figures

[0116] 1, 1A…Plasma processing device, 2…Control unit, 10…Plasma processing chamber, 10a…Side wall, 10s…Plasma processing space, 11…Substrate support, 12…Plasma generation unit, 13…Spray head, 13d…Upper electrode, 13e…Top plate, 13f…First support, 14…Top, 30…Power supply, 31…RF power supply, 31a…First RF generation unit, 32…DC power supply, 32b…Second DC generation unit, 41, 41A…First insulating component, 42…Shielding component, 43…Second support, 44…Second insulating component, 45…Third insulating component, 46…First insulating part, 47…Second insulating part, 111…Main body, 112…Ring assembly, 1110…Base, 1111…Electrostatic chuck, W…Substrate.

Claims

1. A plasma processing device, characterized in that, include: The chamber, electrically grounded, provides space for plasma processing. A substrate support portion is disposed within the cavity and configured to support the substrate; The upper electrode, which is a top portion disposed above the plasma processing space in a manner that closes the opening of the chamber, is configured to apply high-frequency electrical power and is disposed above the substrate support portion; A first insulating component, which is part of the top, is disposed between the upper electrode and the chamber in a manner that electrically separates the upper electrode from the chamber; A shielding component, which is another part of the top, is conductive, formed of a silicon-containing material, and extends from the periphery of the upper electrode to the chamber; At least one second insulating component is disposed outside the first insulating component and on the shielding component in a manner located between the chamber and the shielding component; and At least one third insulating member is disposed below the shielding member in a manner located between the chamber and the shielding member, supporting the shielding member between the at least one second insulating member and the at least one third insulating member. The portion of the top exposed in the plasma processing space is composed of a conductor containing the upper electrode and the shielding component.

2. The plasma processing apparatus according to claim 1, characterized in that: The at least one third insulating component is formed of insulating ceramic, quartz, or metal oxide.

3. A plasma processing device, characterized in that, include: The chamber, electrically grounded, provides space for plasma processing. A substrate support portion is disposed within the cavity and configured to support the substrate; The upper electrode, which is a top portion disposed above the plasma processing space in a manner that closes the opening of the chamber, is configured to apply high-frequency electrical power and is disposed above the substrate support portion; A first insulating component, which is part of the top, is disposed between the upper electrode and the chamber in a manner that electrically separates the upper electrode from the chamber; and A shielding component, which is another part of the top, is conductive, formed of a silicon-containing material, and extends from the periphery of the upper electrode to the chamber. The portion of the top exposed in the plasma processing space is composed of a conductor including the upper electrode and the shielding component. The first insulating component has: A first insulating portion is disposed between the upper electrode and the chamber; and A second insulating portion is disposed outside the first insulating portion and on the shielding component, located between the chamber and the shielding component. The plasma processing apparatus further includes at least one other insulating component disposed below the shielding component in a manner located between the chamber and the shielding component, supporting the shielding component between the second insulating portion of the first insulating component and the at least one other insulating component.

4. The plasma processing apparatus according to claim 3, characterized in that: The at least one other insulating component is formed of insulating ceramic, quartz, or metal oxide.

5. The plasma processing apparatus according to any one of claims 1 to 4, characterized in that: It also includes a DC power supply electrically connected to at least one of the upper electrode and the shielding component.

6. The plasma processing apparatus according to any one of claims 1 to 4, characterized in that: The shielding component is electrically levitated.

7. The plasma processing apparatus according to any one of claims 1 to 4, characterized in that: It also includes a high-frequency power supply, which is configured to generate the high-frequency electrical power and is electrically connected to the upper electrode.

8. The plasma processing apparatus according to any one of claims 1 to 4, characterized in that: The inner wall portion of the inner side of the sidewall of the chamber is formed of silicon.

9. The plasma processing apparatus according to any one of claims 1 to 4, characterized in that: It also includes a DC power supply electrically connected to the outer portion of the shielding component.

10. The plasma processing apparatus according to claim 3 or 4, characterized in that: It also includes a DC power supply electrically connected to the outer side of the shielding component via a connecting portion. The connecting portion passes through the second insulating portion and connects to the outer part of the shielding component.

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