Batch substrate atomic layer deposition device

Abstract

The invention relates to a batch substrate atomic layer deposition device. The batch substrate atomic layer deposition device comprises a vacuum cavity, a shaft seal device and a rotation driving assembly. The vacuum cavity comprises a front side wall, a rear side wall and a peripheral surface; the front side wall and the rear side wall are arranged in parallel, and the peripheral surface is connected with the edges of the front side wall and the rear side wall to form a reaction space. A plurality of concave portions and a plurality of convex portions are arranged on the inner side of the peripheral face in a staggered mode, the concave portions and the convex portions are arranged in a radial mode around the rotating shaft direction, the bottom of each concave portion is a plane, and the rotating shaft direction passes through the front side wall and the rear side wall. One end of the shaft seal device is connected to the rear side wall in the rotating axial direction. The rotation driving assembly is connected to the other end of the shaft seal device so as to be connected with the vacuum cavity through the shaft seal device and drive the vacuum cavity to rotate in the axial direction of the rotation shaft.

Description

Technical Field

[0001] The present invention relates to a batch-type substrate atomic layer deposition apparatus for accommodating a plurality of substrates to be processed, and performing atomic layer deposition operations on the surfaces of the plurality of substrates to be processed in a batch manner. Background Art

[0002] Nanoparticles are generally defined as particles with at least one dimension less than 100 nanometers. Nanoparticles have distinct physical and chemical properties from macroscopic substances. Generally, the physical properties of macroscopic substances are independent of their own size, but this is not the case for nanoparticles. Nanoparticles have potential applications in the fields of biomedicine, optics, and electronics.

[0003] Quantum dots are semiconductor nanoparticles. Currently, the semiconductor materials under research are II-VI materials such as ZnS, CdS, CdSe, etc., among which CdSe has attracted the most attention. The size of quantum dots is usually between 2 and 50 nanometers. When quantum dots are irradiated with ultraviolet light, electrons in the quantum dots absorb energy and transition from the valence band to the conduction band. When the excited electrons return from the conduction band to the valence band, they release energy by emitting light.

[0004] The energy gap of quantum dots is related to their size. The larger the size of the quantum dots, the smaller the energy gap, and after irradiation, they will emit light with a longer wavelength. The smaller the size of the quantum dots, the larger the energy gap, and after irradiation, they will emit light with a shorter wavelength. For example, quantum dots with a size of 5 to 6 nanometers will emit orange or red light, while quantum dots with a size of 2 to 3 nanometers will emit blue or green light. Of course, the light color depends on the material composition of the quantum dots.

[0005] The light generated by light-emitting diodes (LEDs) using quantum dots can be close to a continuous spectrum, and at the same time has a high color rendering index, which is beneficial to improving the light-emitting quality of the light-emitting diodes. In addition, the wavelength of the emitted light can be adjusted by changing the size of the quantum dots, making quantum dots the focus of development for a new generation of light-emitting devices and displays.

[0006] Although quantum dots have the above-mentioned advantages and characteristics, they are prone to agglomeration during the manufacturing process. In addition, quantum dots have a high surface activity and are prone to react with air and water vapor, thereby shortening the lifespan of the quantum dots.

[0007] Specifically, during the process of fabricating quantum dots into the encapsulant of a light-emitting diode, an aggregation effect may occur, reducing the optical properties of the quantum dots. In addition, after the quantum dots are fabricated into the encapsulant of a light-emitting diode, external oxygen or moisture may still penetrate the encapsulant and come into contact with the surface of the quantum dots, causing the quantum dots to oxidize and shortening the efficiency or service life of the quantum dots and the light-emitting diode. In addition, surface defects and dangling bonds of the quantum dots may also cause nonradiative recombination.

[0008] Currently, the industry uses atomic layer deposition (ALD) to form a thin film with a nanometer thickness on the surface of quantum dots, or forms multiple layers of thin films on the surface of quantum dots to form a quantum well structure.

[0009] Atomic layer deposition can form a thin film with a uniform thickness on a substrate and can effectively control the thickness of the thin film. In theory, it is also applicable to three-dimensional quantum dots. When quantum dots are placed statically on a carrier plate, there will be contact points between adjacent quantum dots, making the precursor gas of atomic layer deposition unable to contact these contact points and resulting in an inability to form a thin film with a uniform thickness on the surface of all nanoparticles. Summary of the Invention

[0010] Based on the above technical problems, the present invention proposes a batch-type substrate atomic layer deposition device for forming a thin film with a uniform thickness on the surface of nanoparticles.

[0011] The present invention proposes a batch-type substrate atomic layer deposition device, including a vacuum chamber, a shaft seal device, and a rotary drive assembly. The vacuum chamber includes a front side wall, a rear side wall, and a peripheral surface; the front side wall and the rear side wall are arranged parallel to each other, and the peripheral surface connects the edges of the front side wall and the rear side wall to form a reaction space. A plurality of recesses and a plurality of protrusions are arranged in an alternating manner on the inner side of the peripheral surface, and the plurality of recesses and the plurality of protrusions are arranged radially around the rotation axis. The bottom of each recess is a plane, and the rotation axis passes through the front side wall and the rear side wall. One end of the shaft seal device is connected to the rear side wall along the rotation axis. The rotary drive assembly is connected to the other end of the shaft seal device to be connected to the vacuum chamber through the shaft seal device and drive the vacuum chamber to rotate along the rotation axis.

[0012] Furthermore, the batch-type substrate atomic layer deposition device further includes a base, the base has a setting surface, and the rotary drive assembly is arranged on the setting surface.

[0013] Preferably, the batch-type substrate atomic layer deposition device further includes a plurality of gas pipelines, extending in the shaft seal device and fluidly connected to the vacuum chamber, and the plurality of gas pipelines are fixed and do not rotate with the vacuum chamber.

[0014] Preferably, the shaft seal device includes an outer sleeve shaft tube and a central shaft. The outer sleeve shaft tube is rotatably mounted on the installation surface through a bearing bracket, and the outer sleeve shaft tube has a first end, a second end and an accommodation space; the rotary drive assembly is connected to the first end of the outer sleeve shaft tube, and the second end of the outer sleeve shaft tube is connected to the rear side wall of the vacuum chamber, so that the rotary drive assembly drives the outer sleeve shaft tube to rotate and drives the vacuum chamber to rotate. The central shaft has a tubular space, and a plurality of gas pipelines extend in the tubular space. The central shaft is disposed through the accommodation space, and the outer sleeve shaft tube and the central shaft are coaxially arranged in the rotation axis direction; the central shaft is fixedly arranged and does not rotate with the outer sleeve shaft tube.

[0015] Preferably, the rear side wall is provided with a through hole, the central shaft protrudes from the second end of the outer sleeve shaft tube, is inserted into the through hole to form a rotary seal with the vacuum chamber, and one or more shaft seal members are arranged between the central shaft and the outer sleeve shaft tube.

[0016] Preferably, the plurality of gas pipelines include a suction pipeline, a reaction gas pipeline and a blowing pipeline. The suction pipeline is fluidly connected to the reaction space for evacuating the gas in the reaction space. The reaction gas pipeline is fluidly connected to the reaction space for delivering a reaction gas including reactants to the reaction space. The blowing pipeline is fluidly connected to the reaction space and is used for delivering an inert gas that does not participate in the reaction as a purge gas into the reaction space.

[0017] Preferably, a filtering unit is arranged at one end of the central shaft connected to the reaction space; the suction pipeline is fluidly connected to the reaction space via the filtering unit and evacuates the gas in the reaction space via the filtering unit.

[0018] Preferably, the vacuum chamber further includes a surrounding wall, which is arranged on one side of the rear side wall located in the reaction space and surrounds the through hole.

[0019] Preferably, the batch substrate atomic layer deposition device further includes a heater and a temperature sensing unit. The heater is arranged in the tubular space for heating the tubular space. The temperature sensing unit is arranged in the tubular space of the central shaft for measuring the temperature of the heater or the tubular space to adjust the power of the heater.

[0020] Preferably, the batch substrate atomic layer deposition device further includes a heating device, which is arranged around the outer side of the circumferential surface for heating the vacuum chamber and the reaction space.

[0021] With the batch substrate atomic layer deposition device of the present invention, a plurality of substrates to be processed can be simultaneously subjected to batch atomic layer thin film deposition. The powder used to form a part of the thin film can be effectively stirred and dispersed in the reaction space to form a thin film with uniform thickness on the surface of the substrate to be processed. Description of the Drawings

[0022] Figure 1It is a perspective view of the batch substrate atomic layer deposition apparatus according to an embodiment of the present invention.

[0023] Figure 2 It is a schematic cross-sectional view of the batch substrate atomic layer deposition apparatus according to an embodiment of the present invention.

[0024] Figure 3 It is a schematic cross-sectional view of the shaft seal device in an embodiment of the present invention.

[0025] Figure 4 It is a perspective view of the vacuum chamber in an embodiment of the present invention.

[0026] Figure 5 It is a schematic cross-sectional view of the vacuum chamber in an embodiment of the present invention.

[0027] Figure 6 It is another schematic cross-sectional view of the vacuum chamber in an embodiment of the present invention.

[0028] Figure 7 It is a perspective view of the batch substrate atomic layer deposition apparatus according to another embodiment of the present invention.

[0029] Figure 8 It is a schematic cross-sectional view of the batch substrate atomic layer deposition apparatus according to another embodiment of the present invention.

[0030] Explanation of reference numerals: 100 - batch substrate atomic layer deposition apparatus; 110 - base; 112 - setting surface; 114 - bearing frame; 120 - rotary drive assembly; 122 - motor; 124 - transmission component; 130 - shaft seal device; 132a - first end; 132b - second end; 132c - accommodating space; 134a - tubular space; 134b - filtering unit; 140 - vacuum chamber; 140a - reaction space; 140b - chamber body; 140c - cover plate; 142 - front side wall; 144 - rear side wall; 144a - perforation; 146 - peripheral surface; 147 - recess; 148 - protrusion; 149 - surrounding wall; 150 - gas pipeline; 152 - suction pipeline; 154 - reaction gas pipeline; 156 - blowing pipeline; 158 - temperature sensing unit; 159 - heater; 160 - shaft seal member; 180 - heating device; 182 - connecting frame; P - powder; C - substrate to be processed. Detailed Description of the Invention

[0031] Please refer to Figure 1 、 Figure 2 、 Figure 3 and Figure 4 as shown, which is a batch substrate atomic layer deposition apparatus 100 proposed by an embodiment of the present invention. As Figure 1 and Figure 2As shown, the batch substrate atomic layer deposition apparatus 100 includes a base 110, a rotation driving assembly 120, a shaft seal device 130, a vacuum chamber 140, and a plurality of gas pipelines 150. The rotation driving assembly 120 is connected to the vacuum chamber 140 through the shaft seal device 130 and drives the vacuum chamber 140 to rotate along the rotation axis. The plurality of gas pipelines 150 extend in the shaft seal device 130 and are fluidly connected to the inside of the vacuum chamber 140, and the plurality of gas pipelines 150 are fixed and do not rotate with the vacuum chamber 140.

[0032] As Figure 1 , Figure 2 and Figure 4 As shown, the vacuum chamber 140 includes a front side wall 142, a rear side wall 144, and a peripheral surface 146. The front side wall 142 and the rear side wall 144 are arranged parallel to each other. The peripheral surface 146 connects the edges of the front side wall 142 and the rear side wall 144 to form a reaction space 140a for accommodating the powder P. The shaft seal device 130 is connected to the rear side wall 144, the rotation axis passes through the front side wall 142 and the rear side wall 144, and the peripheral surface 146 surrounds the rotation axis.

[0033] As Figure 5 and Figure 6 As shown, a plurality of recesses 147 and a plurality of protrusions 148 are arranged in an alternating manner on the inner side of the peripheral surface 146, and the bottom of each recess 147 is a flat surface. The plurality of recesses 147 and the plurality of protrusions 148 are arranged radially around the rotation axis. The plurality of recesses 147 are respectively used for placing a substrate C to be processed thereon to perform atomic layer deposition on a plurality of substrates C to be processed simultaneously in batch.

[0034] As Figure 1 and Figure 2 As shown, the base 110 has a setting surface 112 for setting each component thereon. The base 110 can be an independent plate member, detachably mounted on the working platform. The base 110 can also be a part of the working platform.

[0035] As Figure 2 and Figure 3As shown in the figure, one end of the shaft seal device 130 is connected to the rear side wall 144 of the vacuum chamber 140 along the rotation axis, and the rotary drive assembly 120 is connected to the other end of the shaft seal device 130. Specifically, the shaft seal device 130 includes an outer sleeve shaft tube 132 and a central shaft 134. The outer sleeve shaft tube 132 is rotatably mounted on the setting surface 112 of the base 110 through a bearing bracket 114, and the rotary drive assembly 120 is arranged on the setting surface 112. The outer sleeve shaft tube 132 has a first end 132a, a second end 132b, and a receiving space 132c. Specifically, the outer sleeve shaft tube 132 is a hollow columnar body. The rotary drive assembly 120 is directly or indirectly connected to the first end 132a of the outer sleeve shaft tube 132, and the second end 132b of the outer sleeve shaft tube 132 is connected to the rear side wall 144 of the vacuum chamber 140, so that the rotary drive assembly 120 is connected to the vacuum chamber 140 through the shaft seal device 130. The rotary drive assembly 120 is used to drive the outer sleeve shaft tube 132 to rotate and drive the vacuum chamber 140 to rotate along the rotation axis.

[0036] In terms of specific composition, the vacuum chamber 140 includes a chamber body 140b and a cover plate 140c. The chamber body 140b has a rear side wall 144 and a peripheral surface 146. The peripheral surface 146 extends from the edge of the rear side wall 144 to form an opening. The cover plate 140c is used to be combined with the opening to serve as the front side wall 142, and a reaction space 140a is formed between the chamber body 140b and the cover plate 140c.

[0037] The aforementioned powder P can be quantum dots (Quantum Dot), such as II-VI semiconductor materials such as ZnS, CdS, CdSe, etc., and the thin film formed on the quantum dots can be aluminum oxide (Al2O3). The above materials are only examples of the present invention.

[0038] As Figure 2 and Figure 3 As shown in the figure, the central shaft 134 has a tubular space 134a, and a plurality of gas pipelines 150 extend in the tubular space 134a. The central shaft 134 is inserted into the receiving space 132c of the outer sleeve shaft tube 132, and the outer sleeve shaft tube 132 and the central shaft 134 are coaxially arranged in the rotation axis direction. The central shaft 134 is fixedly arranged, the rotary drive assembly 120 is not connected to the central shaft 134, and there is no fixed connection between the outer sleeve shaft tube 132 and the central shaft 134. Therefore, the central shaft 134 does not rotate with the outer sleeve shaft tube 132. For example, the central shaft 134 is directly or indirectly fixed to the base 110, and the outer sleeve shaft tube 132 is rotatably sleeved on the central shaft 134. The non-rotating central shaft 134 is beneficial to maintaining the stability of the plurality of gas pipelines 150.

[0039] As Figure 1 and Figure 2As shown, the second end 132b of the outer sleeve shaft tube 132 is vertically connected to the rear side wall 144, enabling the rotary drive assembly 120 to drive the vacuum cavity 140 to rotate along the rotary axis through the outer sleeve shaft tube 132.

[0040] As Figure 2 shown, the rear side wall 144 is provided with a perforation 144a. The central shaft 134 protrudes from the second end 132b of the outer sleeve shaft tube 132 and is inserted into the perforation 144a to form a rotary seal with the vacuum cavity 140. Specifically, one or more shaft seals 160 are provided between the central shaft 134 and the outer sleeve shaft tube 132. The shaft seal 160 can be a mechanical shaft seal or a magnetic fluid shaft seal, used to enhance the airtightness of the reaction space 140a and prevent the gap between the central shaft 134 and the perforation 144a from affecting the airtightness of the reaction space 140a.

[0041] As Figure 1 and Figure 2 shown, specifically, the rotary drive assembly 120 has a motor 122 and a transmission component 124. The motor 122 is fixed on the setting surface 112 of the base 110 and is connected to the outer sleeve shaft tube 132 of the shaft seal device 130 through the transmission component 124. In one embodiment, the transmission component 124 includes a driving gear connected to the motor 122 and a driven gear provided on the outer sleeve shaft tube 132. The driving gear engages with the driven gear, enabling the motor 122 to drive the outer sleeve shaft tube 132 through the transmission component 124 and drive the vacuum cavity 140 to rotate. The transmission component 124 does not exclude other components, such as a combination of a belt and a pulley coupled to the motor 122 / outer sleeve shaft tube 132. It is not excluded to omit the transmission component 124 and directly connect the motor 122 to the outer sleeve shaft tube 132. The rotary drive assembly 120 drives the outer sleeve shaft tube 132 to rotate, causing the vacuum cavity 140 to continuously rotate in the same direction, such as continuously rotating in the clockwise or counterclockwise direction.

[0042] As Figure 2 and Figure 3 shown, a plurality of gas pipelines 150 are disposed in the tubular space 134a of the central shaft 134 and are connected to the reaction space 140a. The plurality of gas pipelines 150 include an evacuation pipeline 152, a reaction gas pipeline 154, and a blowing pipeline 156, which are fluidly connected to the reaction space 140a of the vacuum cavity 140.

[0043] As Figure 2 and Figure 3 shown, the evacuation pipeline 152 is used to connect to an external vacuum pump and is fluidly connected to the reaction space 140a of the vacuum cavity 140 to evacuate the reaction space 140a using the vacuum pump and remove the gas in the reaction space 140a for subsequent atomic layer deposition process.

[0044] As Figure 2 andFigure 3 As shown, the reaction gas pipeline 154 is fluidly connected to the reaction space 140a of the vacuum chamber 140, and is used to transport the reaction gas including reactants (starting materials / precursors) to the reaction space 140a, so that the reactants (starting materials / precursors) are adsorbed on the surface of the powder P. The reaction gas may include an inert gas (such as nitrogen) as a carrier and the starting material / precursor blown by the inert gas; or, the main component of the reaction gas itself is the reactant (starting material / precursor). In actual application, the reaction gas pipeline 154 continuously transports the reaction gas into the reaction space 140a, and the air pump continuously pumps air through the air extraction pipeline 152 to remove the unreacted precursor gas in the reaction space 140a. The number of reaction gas pipelines 154 can be multiple, and each transports the reaction gas including different reactants.

[0045] As Figure 2 shown in Figure 3 As shown, the blow pipeline 156 is fluidly connected to the reaction space 140a of the vacuum chamber 140, and is used to transport an inert gas that does not participate in the reaction as a purge gas (such as nitrogen) into the reaction space 140a. The purge gas creates a powder P flow field in the reaction space 140a, blows the powder P in the reaction space 140a, and cooperates with the rotation drive assembly 120 to drive the vacuum chamber 140 to rotate, which can effectively and evenly stir the powder P in the reaction space 140a to deposit a film with a uniform thickness on the surface of each powder P. In addition, the flow rate of the gas transported by the reaction gas pipeline 154 to the reaction space 140a can be increased, and the powder P in the reaction space 140a is blown by the gas, so that the powder P is driven by the gas and diffuses to each area of the reaction space 140a. In addition, the blow pipeline 156 can also be omitted, and the flow rate of the reaction gas transported by the reaction gas pipeline 154 can be directly increased to create a powder P flow field with the reaction gas.

[0046] In addition, the batch substrate atomic layer deposition apparatus 100 further includes a temperature sensing unit 158 and a heater 159. The temperature sensing unit 158 can be a thermocouple and is arranged in the tubular space 134a of the central shaft 134. The heater 159 is also arranged in the tubular space 134a and is used to heat the tubular space 134a to adjust the gas temperature in the multiple gas pipelines 150. The temperature sensing unit 158 is used to measure the temperature of the heater 159 or the tubular space 134a to know the working state of the heater 159, so as to adjust the power of the heater 159.

[0047] As Figure 5As shown, the substrate C to be processed can be an LED substrate or a chip, and the substrate C to be processed can be placed on the plane of the recess 147. By driving the driving device and the shaft seal device 130, the vacuum chamber 140 is rotated, and the reactants (precursors / starting materials) can be deposited and adhered to the surface of the substrate C to be processed to form a thin film. At the same time, the powder P continuously falls under the influence of gravity and lands on the substrate C to be processed that has been moved downward. The reactants can effectively adsorb the powder P to form a thin film with powder P particles.

[0048] In addition, during the rotation of the vacuum chamber 140, the convex portion 148 that continuously moves along the circumferential direction can also stir the powder P and lift the powder P in the reaction space 140a, so that the powder P can be more fully dispersed and will not accumulate at a specific position on the peripheral surface 146.

[0049] As Figure 2 shown, in an embodiment of the present invention, a filter unit 134b can be provided at one end of the central shaft 134 connecting the reaction space 140a. The extraction pipeline 152 is fluidly connected to the reaction space 140a via the filter unit 134b, and the gas in the reaction space 140a is extracted via the filter unit 134b. The filter unit 134b is mainly used to filter the powder P in the reaction space 140a to prevent the powder P from entering the extraction pipeline 152 during the extraction process, resulting in the loss of the powder P.

[0050] To prevent a large amount of the powder P stirred by the convex portion 148 from accumulating on the filter unit 134b and blocking the filter unit 134b, the vacuum chamber 140 further includes a surrounding wall 149, which is provided on the side of the rear side wall 144 located in the reaction space 140a and surrounds the through hole 144a. The surrounding wall 149 radially blocks the through hole 144a by the through hole 144a, thereby preventing the stirred powder P from directly falling on the through hole 144a area and blocking the filter unit 134b.

[0051] Referring again to Figure 7 and Figure 8 shown, in order to maintain the temperature in the reaction space 140a, the batch substrate atomic layer deposition apparatus 100 further includes a heating device 180, which is provided outside the peripheral surface 146 of the vacuum chamber 140. Specifically, the heating device 180 is annular and is arranged to surround the outside of the peripheral surface 146. The body of the heating device 180 can be made of metal, and a heating coil or a heating rod is buried inside. The heating device 180 is used to heat the vacuum chamber 140 and the reaction space 140a. In an embodiment of the present invention, the heating device 180 can be connected to the base 110 through a connecting frame 182, and the rotary drive assembly 120 drives the vacuum chamber 140 to rotate relative to the heating device 180 through the shaft seal device 130.

[0052] Through the batch substrate atomic layer deposition apparatus 100 of the present invention, a plurality of substrates C to be processed can be simultaneously subjected to batch atomic layer thin film deposition. The powder P forming part of the thin film can be effectively agitated and dispersed in the reaction space 140a to form a thin film with a uniform thickness on the surface of the substrate C to be processed.

[0053] The above are only embodiments of the present invention and are not intended to limit the scope of implementation of the present invention. That is, equivalent changes and modifications made according to the shape, structure, features and spirit described in the claims of the present invention should be included within the scope of protection claimed by the present invention.

Claims

1. A batch substrate atomic layer deposition apparatus, characterized in that, Comprising: A vacuum chamber, including a front side wall, a rear side wall, and a peripheral surface; the front side wall and the rear side wall are arranged parallel to each other, and the peripheral surface connects the edges of the front side wall and the rear side wall to form a reaction space; wherein, a plurality of concave portions and a plurality of convex portions are arranged in an alternating configuration on the inner side of the peripheral surface, the plurality of concave portions and the plurality of convex portions are arranged radially around the rotation axis, the bottom of each concave portion is a plane, and the rotation axis passes through the front side wall and the rear side wall; A shaft seal device, one end of which is connected to the rear side wall along the rotation axis; and A rotary drive assembly, connected to the other end of the shaft seal device, to be connected to the vacuum chamber through the shaft seal device and drive the vacuum chamber to rotate along the rotation axis.

2. The batch substrate atomic layer deposition apparatus according to claim 1, wherein It further includes a base, the base has a setting surface, and the rotary drive assembly is arranged on the setting surface.

3. The batch substrate atomic layer deposition apparatus according to claim 1, wherein It further includes a plurality of gas pipelines, extending in the shaft seal device, fluidly connected to the vacuum chamber, and the plurality of gas pipelines are fixed and do not rotate with the vacuum chamber.

4. The batch substrate atomic layer deposition apparatus according to claim 2, characterized in that, The shaft seal device includes: An outer sleeve shaft tube, rotatably mounted on the setting surface through a bearing bracket, and the outer sleeve shaft tube has a first end, a second end, and a receiving space; the rotary drive assembly is connected to the first end of the outer sleeve shaft tube, and the second end of the outer sleeve shaft tube is connected to the rear side wall of the vacuum chamber, so that the rotary drive assembly is connected to the rear side wall of the vacuum chamber through the outer sleeve shaft tube to drive the vacuum chamber to rotate; And A central shaft, having a tubular space, and the plurality of gas pipelines extend in the tubular space; Wherein, the central shaft is inserted into the receiving space, and the outer sleeve shaft tube and the central shaft are coaxially arranged on the rotation axis; the central shaft is fixedly arranged and does not rotate with the outer sleeve shaft tube.

5. The batch substrate atomic layer deposition apparatus according to claim 4, characterized in that, The rear side wall is provided with a through hole, the central shaft protrudes from the second end of the outer sleeve shaft tube, is inserted into the through hole to form a rotary seal with the vacuum chamber, and one or more shaft seal members are arranged between the central shaft and the outer sleeve shaft tube.

6. The batch substrate atomic layer deposition apparatus according to claim 4, wherein The plurality of gas pipelines include: A suction pipeline, fluidly connected to the reaction space, for evacuating the gas in the reaction space; A reaction gas pipeline, fluidly connected to the reaction space, for transporting a reaction gas including reactants to the reaction space; and A blowing pipeline, fluidly connected to the reaction space, and used for transporting an inert gas that does not participate in the reaction as a purge gas into the reaction space.

7. The batch substrate atomic layer deposition apparatus according to claim 6, wherein A filter unit is arranged at one end of the central shaft connected to the reaction space; the suction pipeline is fluidly connected to the reaction space via the filter unit and evacuates the gas in the reaction space via the filter unit.

8. The batch substrate atomic layer deposition apparatus according to claim 7, wherein The vacuum chamber further includes a surrounding wall, arranged on the side of the rear side wall where the reaction space is located, and surrounding the through hole.

9. The batch substrate atomic layer deposition apparatus according to claim 8, wherein It further includes: A heater, arranged in the tubular space, for heating the tubular space; and A temperature sensing unit is arranged in the tubular space of the central axis and is used for measuring the temperature of the heater or the tubular space to adjust the power of the heater.

10. The batch substrate atomic layer deposition device according to claim 1 further includes a heating device which is arranged on the outer side of the peripheral surface for heating the vacuum cavity and the reaction space.

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