Anti-counterfeiting pattern generation method, device and readable storage medium with arbitrary image distance

Abstract

The application provides a security pattern generation method with an arbitrary image distance, comprising the following steps: S1, designing pattern data processing; S2, calculating a basic imaging microstructure; S3, obtaining an axis core coordinate according to an array rule; S4, calculating an anisotropic imaging microstructure; and S5, cyclically generating the anisotropic imaging microstructure array according to an arrangement rule, so that the security pattern is realized when a point light source irradiates on the anisotropic imaging microstructure array. The security pattern film with the arbitrary image distance prepared by the method can realize the effects of floating in the air at an arbitrary distance and sinking at the bottom of the film, is not inferior to the double-layer micro-lens imaging technology, and is single-layer in structure, so that the method is not different from the preparation of the traditional holographic security film in process, and thus is easy to realize industrialization and mass production.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of visual anti-counterfeiting technology, and particularly relates to a method for generating an anti-counterfeiting pattern with an arbitrary image distance. BACKGROUND

[0002] Micro-lens array imaging technology is a public anti-counterfeiting technology that is independent of traditional optical variable images. The technology produces a strong dynamic, stereoscopic, and transformation effect by using a micro-lens array and a micro-pattern array on both sides of a transparent film, and through the Moire magnification of the micro-lens array on the micro-pattern array. The effect includes floating, sinking, parallel movement (the dynamic effect is consistent with the moving direction), orthogonal movement (the dynamic effect is perpendicular to the moving direction), and double-channel.

[0003] Micro-lens array imaging technology is a public anti-counterfeiting technology that is independent of traditional optical variable images. The technology produces a strong dynamic, stereoscopic, and transformation effect by using a micro-lens array and a micro-pattern array on both sides of a transparent film, and through the Moire magnification of the micro-lens array on the micro-pattern array. The effect includes floating, sinking, parallel movement (the dynamic effect is consistent with the moving direction), orthogonal movement (the dynamic effect is perpendicular to the moving direction), and double-channel.

[0004] Generally, the thickness of an anti-counterfeiting film product is required to be very thin, especially the film used for ticket security and transparent windows, which is required to be less than 50 mm. This requires that the processing precision of the micro-lens array and the micro-pattern array is very high, and the conventional plating and production process cannot meet the requirements, and modern precise micro-nano processing, UV imprinting, and other materials need to be used to achieve the effect. Moreover, a strict structural matching relationship is required between the two, and the process requirement is very high, which is difficult to counterfeit. The technology does not require a high illumination light source, and the effect can be easily observed even in relatively dark light, which is an ideal public anti-counterfeiting technology.

[0005] However, the existing imaging technology requires a double-layer structure, and a certain imaging distance is required so that the micro-pattern information can reach the imaging effect near the focal point of the lens array. Compared with the conventional single-layer micro-structure holographic anti-counterfeiting film, this method is very difficult to implement in terms of process, and the high-precision alignment requirement and the thick film thickness not only lead to a low yield and difficulty in batch production, but also greatly increase the production cost.

[0006] Therefore, it is necessary to provide a novel anti-counterfeiting pattern generation method with an arbitrary image distance to overcome the above-mentioned defects. SUMMARY

[0007] The application aims to provide a security pattern generation method with arbitrary image distance, and the security pattern film with arbitrary image distance made by the method can realize the effect of floating in the air and sinking in the bottom of the film, which is not inferior to the double-layer microlens imaging technology, and the structure is single-layer, so the industrialization is easy to realize.

[0008] In order to achieve the above-mentioned purpose, the application provides a security pattern generation method with arbitrary image distance, comprising the following steps:

[0009] S1, design pattern data processing;

[0010] S2, basic imaging microstructure calculation;

[0011] S3, obtaining the axis coordinate according to the array rule;

[0012] S4, calculating the heteromorphic imaging microstructure;

[0013] S5, cyclically generating the heteromorphic imaging microstructure array according to the arrangement rule, and when the point light source irradiates on the heteromorphic imaging microstructure array, the security pattern of imaging is realized.

[0014] Preferably, the step S1 further comprises the step S11: making the design pattern needed to be imaged, and performing binary processing on the design pattern, and performing rate discretization processing into a binary matrix according to the required rate, and the binary matrix can be expressed as follows, m1 and n1 are pixel coordinates:

[0015]

[0016] Wherein, the value range of m1 and n1 is 1-5000, and when different image distances are designed, the value of the binary matrix is h1, and the formula is as follows:

[0017]

[0018] When the coordinate is the design pattern, the value of the blank area is 0.

[0019] Preferably, the step S2 further comprises the step S21: the basic imaging microstructure can be any axisymmetric microstructure with converging or diffusing light function, the axis of the axisymmetric microstructure is perpendicular to the bottom plane, and the top is an axisymmetric curved surface, the basic imaging microstructure is expressed by the profile curve equation g(x) of the axis section, x is the distance of the point on the bottom plane from the axis, and when the basic imaging microstructure is a hemisphere,

[0020]

[0021] r is the radius of the hemisphere, when the distance x from the axis is 0, the height g(x) is maximum, and when the distance x from the axis is maximum (x=r), g(x) is 0, the bottom of the basic imaging microstructure can be any central symmetric planar pattern.

[0022] Preferably, the step S4 further comprises a step S41: obtaining the imaging height h1 corresponding to the value of the coordinate of the basic imaging microstructure from the binary matrix in S11, obtaining the image formed by the whole basic imaging microstructure through the imaging height h1 and the refraction angle deviation equation w(x), rounding the imaging position by the same resolution, and obtaining the corresponding position information through the binary matrix, imaging the position with the matrix value of 1 as the black region, and processing the structure as a special shape, and not processing the region with the matrix value of 0, that is, obtaining the special imaging microstructure at the position.

[0023] Preferably, the basic imaging microstructure array is arranged in a way of orthogonality, a planar quadrilateral, or a honeycomb arrangement.

[0024] A computer device comprises a memory, a processor, and a computer program stored on the memory and executable on the processor, and the processor executes the program to realize the anti-counterfeiting pattern generation method with an arbitrary image distance.

[0025] A computer readable storage medium stores a computer readable program, and the program is executed by a processor to realize the anti-counterfeiting pattern generation method with an arbitrary image distance.

[0026] Compared with the prior art, the anti-counterfeiting pattern film with an arbitrary image distance prepared by the method of the application can realize the effect of floating in the air at an arbitrary distance and the effect of sinking at the bottom of the film, which is not inferior to the double-layer micro-lens imaging technology, and since the structure is single-layer, the process is the same as that of the traditional holographic anti-counterfeiting film, so it is easy to realize industrialization and mass production.

[0027] Other features and advantages of the present application will be set forth in the description that follows, and in part will become apparent to those skilled in the art upon examination of the following or can be learned by practice of the application. The features and advantages of the application can be realized and obtained by means of the instruments and combinations particularly pointed out in the appended claims. These and other features of the present application will become more fully apparent from the following description and appended claims, or can be learned by the practice of the application as described in the following specification. BRIEF DESCRIPTION OF DRAWINGS

[0028] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some of the embodiments of the present application, and therefore should not be regarded as a limitation on the scope, and for those of ordinary skill in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.

[0029] Figure 1 A light path schematic diagram of a basic imaging microstructure in the embodiments of the present application.

[0030] Figure 2 Another light path schematic diagram of a basic imaging microstructure in the embodiments of the present application.

[0031] Figure 3 A schematic diagram of a design pattern in the embodiments of the present application.

[0032] Figure 4 An imaging schematic diagram of a basic imaging microstructure.

[0033] Figure 5 A schematic diagram of an anisotropic imaging microstructure array after processing in the embodiments of the present application.

[0034] Figure 6 A schematic diagram of a first row area selected in the embodiments of the present application. Figure 5 A schematic diagram of a first row area selected in the embodiments of the present application.

[0035] Figure 7 A schematic diagram of a first row area selected in the embodiments of the present application. Figure 6 A front view of the schematic first row area.

[0036] Figure 8 A top view of the schematic first row area. Figure 6 A top view of the schematic first row area.

[0037] Figure 9 A perspective view of the schematic first row area. Figure 6 A perspective view of the schematic first row area. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical solutions and beneficial technical effects of the present application more clear, the following will further describe the present application in combination with the drawings and specific embodiments. It should be understood that the specific embodiments described in the present specification are only for the purpose of explaining the present application, and are not intended to limit the present application.

[0039] It should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present invention.

[0040] It should also be noted that, unless otherwise explicitly specified and limited, terms such as "installation," "connection," "linking," "fixing," and "setting" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art will understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0041] Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first," "second," or "third" may explicitly or implicitly include one or more of that feature. Additionally, "multiple" or "several" means two or more, unless otherwise explicitly specified.

[0042] This invention provides a method for generating anti-counterfeiting patterns with arbitrary image distances, comprising the following steps:

[0043] S1. Design pattern data processing;

[0044] Specifically, you first need to create the design pattern to be imaged using software, and then use CorelDRAW (or other vector graphics tools such as AI) to create the corresponding vector pattern (50mm x 50mm, as shown in the attached image). Figure 3 As shown, the design pattern is an uppercase letter M. The design pattern is binarized and discretized into a binary matrix according to the required resolution. The binary matrix can be represented as follows, where m1 and n1 are pixel coordinates:

[0045]

[0046] Where m1 and n1 range from 1 to 5000, when designing different image distances, the value of the binary matrix can be h1, as shown in the following formula:

[0047]

[0048] When the coordinate is a design pattern, the value of the blank area is 0.

[0049] S2, base imaging microstructure calculation;

[0050] Specifically, the base imaging microstructure can be any axisymmetric microstructure with light converging or diverging function, the axisymmetric microstructure has a plane as the bottom and an axisymmetric curved surface as the top, such as a simple plano-concave or plano-convex lens, the base imaging microstructure can be represented by a profile curve equation g(x) of an axial cross section, x is the distance of a point on the bottom plane from the axis center, for example, when the base imaging microstructure is a hemisphere,

[0051]

[0052] Here, r is the radius of the hemisphere, i.e., the height of the base microstructure, when the distance x from the axis center is 0, the height g(x) is maximum, and when the distance x from the axis center is maximum (x = r), g(x) is 0, the bottom of the base imaging microstructure can be any central symmetric plane pattern, such as a circle, an ellipse, an even number of deformations, or other shapes.

[0053] When the base imaging microstructure is non-circular, the cross section with the maximum diameter passing through the axis needs to be selected as the curve equation, for example, when the bottom is a square with a side length of r and the cross section equation is a hemisphere, the equation is:

[0054]

[0055] Other axisymmetric microstructure curve equations with light converging or diverging function, such as a quadratic function equation, when the bottom is a circle with a radius of r, the curve equation of the quadratic equation parabola is:

[0056]

[0057] Where h is the set height of the base microstructure.

[0058] On the basis of the imaging microstructure with convergence or divergence, different imaging patterns are processed on the selected part of the base imaging microstructure curved surface, the selection of the processing position satisfies the microstructure imaging equation w(x), where x is the distance from the axis center, w(x) is the position of the optical falling on the imaging pattern through x, when the design pattern area corresponding to w(x) imaging is black (when there is a pattern), it is processed, and other areas are not processed, the processing method can be to change the curved surface into a plane, or into a noise structure, i.e., to obtain such a special-shaped imaging microstructure.

[0059] When light passes through an unaltered area, there will be an imaging difference compared to the altered area. For example, when a fixed curved surface is processed into a plane, the trajectory of the light will change, causing obvious regional differences in brightness to appear in the originally relatively uniform brightness microstructure array. This designed difference in brightness is the image formed by the designed heterogeneous imaging microstructure array. The designed heterogeneous imaging microstructure array can realize imaging patterns with arbitrary height. When the image is projected above the heterogeneous imaging microstructure array, the design pattern floating on the surface of the heterogeneous imaging microstructure can be seen. At the same time, by changing the morphology g(x) of the basic imaging microstructure, such as changing a plano-convex lens to a plano-concave lens, or changing the imaging pattern, a virtual image of arbitrary depth can be realized. This allows the observation of the design pattern sinking to the bottom of the basic imaging microstructure.

[0060] Furthermore, the basic imaging microstructure array can be arranged in a regular orthogonal, parallelogram, honeycomb, or random manner; the heterogeneous imaging microstructure is designed on the axisymmetric basic imaging microstructure.

[0061] When the basic imaging microstructure uses a plano-convex lens, such as Figure 1 Given a thickness of h, a bottom circular diameter of d, and a refractive index of n, the geometric radius r is:

[0062]

[0063] Therefore, the focal length of the plano-convex lens can be obtained:

[0064]

[0065] The underlying imaging microstructure of this scheme is at the micrometer level, and it can approximate parallel light regardless of whether it is natural light or a point light source, such as... Figure 1 The first optical path shown uses parallel rays parallel to the axis of symmetry of the basic imaging microstructure. Similarly, when the plano-convex lens is too large, natural light will not be equivalent to parallel light. We utilize the reversibility of the optical path to achieve a floating effect, where the image is projected above the basic imaging microstructure layer. Figure 1 Setting the imaging height to h1 (the imaging distance of the design pattern), we only need to ensure that the image falls on the plane after passing through the plano-convex lens. Figure 4 The curved surface along which the light rays pass in the black area shown in the diagram becomes a flat surface. For example... Figure 1 As shown, when the light falls on the circle marked in the imaging area, the circle of the plano-convex lens changes to a plane, and the equation for w(x) is:

[0066]

[0067] When it is necessary to obtain a design pattern that is submerged beneath the underlying imaging microstructure, by Figure 2The second optical path shown intersects the extension of the refracted ray through the plano-convex lens at the plane at h1 below the microstructure. The corresponding imaging deviation equation is:

[0068]

[0069] According to formula (7), different imaging distances have different deviation equations, and different w(x) can act on the same basic imaging microstructure. For a single basic imaging microstructure, the imaging design can be represented by h(x). For example, for imaging at the same height, when the imaging is damaged, h1(x) = 0, and when the imaging is not damaged, h1(x) = h1. This invention presents imaging with different designs and different image distances at the same time by superimposing the results, presenting different patterns and different floating heights. It can also sink and float in the same design, that is, the imaging height h1 changes with the change of x. When h1 changes continuously with x, the imaging of 3D structures can be realized.

[0070] The axis of a single plano-convex lens corresponds one-to-one with the axis of the imaging area. The imaging pattern can be designed at the corresponding position by offsetting the axis by position w(x). When the pattern is black, the corresponding surface structure is changed. When a complete imaging pattern is needed, the same processing is performed on each plano-convex lens in the array.

[0071] For different curve equations, we only need to determine the geometric radius r(x) of the point. Similarly, we can obtain the corresponding refraction position deviation equation according to the formula above. Of course, we can also design the corresponding basic imaging microstructure shape and the corresponding refractive index through the required deviation equation w(x).

[0072] Depend on Figure 1 It can be seen that the imaging distance range of a plano-convex lens is a circle with a diameter of d1, where the diameter d1 is:

[0073]

[0074] The range of angles for parallel light rays is the maximum angle between the ray and the axis.

[0075]

[0076] From the focal length formula above, we know that:

[0077]

[0078] Obviously, when the diameter of the plano-convex lens is greater than 2h, the thickness h is unchanged, we can obtain a larger parallel light angle by reducing the size of d and increasing the refractive index n, a larger parallel light angle means that the imaging has a wider viewing angle, when the parallel light angle of the imaging changes, the imaging position will shift, as shown in the above formula, when the light angle changes from 0 to θ, the imaging position shifts by d1 / 2, therefore, when the point light source is illuminated, the design pattern will move with the point light source, we can control the severity of the design pattern shaking by changing the size of d1, as shown in formula (8), when the parameters of the micro plano-convex lens array are fixed, d1 is uniquely determined by the imaging height h1, the pattern we image is a visible pattern, during the entire imaging process of the pattern, it is impossible that all the parallel light rays passing through the micro plano-convex lens have the same angle, when the angle difference between adjacent micro plano-convex lenses is too large, the imaging will become blurred, especially when the point light source is illuminated, let the angle difference between adjacent regions be θ1, the imaging overlap deviation is:

[0079]

[0080] Therefore, when the imaging distance h1 is too large, the design pattern imaging will be blurred, at the same time, when we design a pattern with a large imaging distance, we can obtain a clearer imaging pattern by reducing the size of the plano-convex lens focal length, or increasing the refractive index.

[0081] In this embodiment, the base imaging microstructure adopts a spherical plano-convex lens with a bottom circular plane, a diameter of d=50 microns, and a height of h=3 microns, the manufacturing material of the final anti-counterfeiting film is UV glue with a refractive index n=1.5, and the geometric radius r is calculated by formula The profile curve equation of the axial section is The focal length of the spherical plano-convex lens is The imaging height of the spherical plano-convex lens is h1=1.5 mm, and the imaging range d1 of the spherical plano-convex lens is calculated by formula The imaging range d1 of the spherical plano-convex lens is 759.76 microns.

[0082] S3, obtaining the axis coordinates according to the array rule;

[0083] When the design pattern area is 50mm x 50mm, we need to orthogonally arrange 1000 x 1000 50-micron-diameter plano-convex lenses, and it is obviously difficult to quickly realize the design of the anisotropic imaging microstructure by one-by-one calculation. Therefore, the maximum imaging range of the microstructure can be obtained by the foregoing equation, the initial position is obtained according to the arrangement rule, for example, the orthogonally arranged, the first position coordinate is (T / 2, T / 2) after determining the period T, and the axial center coordinate is obtained when the microstructure does not overlap with other microstructures, otherwise the appropriate coordinate is output again. For the orthogonally arranged, when T is greater than or equal to the structure diameter d, no overlap occurs, but for the random arrangement, the anti-overlapping program needs to be adopted in the arrangement rule, otherwise the program running will be slow. For example, a certain range of random disturbance is added to the periodically arranged array to realize the non-overlapping random arrangement rule.

[0084] S4, an anisotropic imaging microstructure is calculated and obtained;

[0085] Specifically, the value of the coordinate (m, n) of the basic imaging microstructure corresponding to the binary matrix in S1 is (T / 2, T / 2), and the imaging height h1 is obtained. At this time, the center of the basic imaging microstructure is (T / 2, T / 2), and the image formed by the entire basic imaging microstructure can be obtained through the imaging height h1 and the refraction angle deviation equation w(x). The imaging position is rounded according to the same resolution, and the corresponding position information is obtained through the binary matrix. The position with a matrix value of 1 is the area where the image is black (when there is a pattern), and the structure is anisotropically processed, for example, the curved surface is changed into a plane, or a noise surface, and the area with a matrix value of 0 is not processed, that is, the anisotropic imaging microstructure at the position is obtained.

[0086] S5, an anisotropic imaging microstructure array is generated according to the arrangement rule, and when a point light source irradiates on the anisotropic imaging microstructure array, the anti-fake pattern of imaging can be realized.

[0087] Specifically, when the arrangement rule is orthogonal, the coordinates are arranged according to the period, and the axial center coordinates are output from left to right and from top to bottom in turn. Through the mapping equation, step S4 is repeated, and finally the anisotropic imaging microstructure array with complete images is obtained.

[0088] Further, the arrangement mode adopts the orthogonal arrangement with a period of T = 50 microns, and the axial center coordinates are output from left to right and from top to bottom in turn. It can be known that the first axial center coordinate is (25, 25) (unit: microns), and the axial center position area is one-to-one corresponding to the suspended pattern area (50 x 50, unit: mm), that is, the imaging area corresponding to the first imaging microstructure is the coordinate (25, 25), and the diameter of the circle is 759.76 microns. Obviously, the imaging range exceeds the original 50 x 50 area, and here we default the part exceeding the original area as the white area without letters, that is, the value is 1.

[0089] As shown in the imaging of the spherical plano-convex lens, the axial deviation equation is formula Figure 1 From the formula, when f=105.67 and h1=1.5mm are fixed values, the equation is a proportional equation w(x)=kx, and the proportional coefficient k=15.2.

[0090] Therefore, it can be simplified to XOR operation after reducing the pattern of the imaging area by 15.2 times, and the plano-convex lens is modeled as a gray scale with a resolution of 250nm, as shown in Figure 4 Figure 4 The highest position in the center of the plano-convex lens is gray scale 255, and the lowest and blank positions are gray scale 0. When the processing method is the method of flattening the curved surface when the corresponding area is black, it can be simplified as the multiplication of the two scaled imaging area matrices and the microlens matrix, (the scaled matrix size needs to be processed to be the same as the microlens modeling matrix, and here the adjacent interpolation is adopted), and the complete imaging microstructure array can be obtained by processing in array coordinates. Figure 5 As shown in the figure, the plano-convex lens in the area of the black letter becomes 0, and the non-black area remains unchanged.

[0091] Figure 6 The first row in Figure 5 Figure 7 , Figure 8 , Figure 9 The front view, top view and perspective view of the first row area respectively can intuitively see the basic imaging microstructure array, that is, the finally designed imaging microstructure array.

[0092] Through this way, the gray scale image of the imaging microstructure array can be obtained, and the way of manufacturing the imaging microstructure array here is to use gray scale laser direct writing equipment to photoetch, and the basic imaging microstructure can be photoetched on the photoresist with a precision of 250nm. The photoresist after photoetching can obtain the corresponding imaging microstructure array through development.

[0093] The imaging microstructure array can be mass replicated through nanoimprinting, and the UV structure after nanoimprinting can be used for various anti-fake films. The design pattern paper under natural light, the UV structure after transfer has the overall effect of 50X50mm M pattern floating in the air 1.5mm above the basic imaging microstructure layer, and when the point light source is irradiated, the M pattern shakes with the point light source. Similarly, the anti-fake pattern with any image distance can be realized by this method.

[0094] The application also provides a computer device, which comprises a memory, a processor and a computer program stored in the memory and executable on the processor, and the processor executes the program to realize the anti-fake pattern generation method with any image distance.​​​

[0095] The application further provides a computer readable storage medium, which stores a computer readable program, and the program is executed by a processor to realize the anti-counterfeiting pattern generation method with an arbitrary image distance.

[0096] Those skilled in the art should understand that the embodiments of the present application can be provided as a method, a system or a computer program product. Therefore, the present application can take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. In addition, the present application can take the form of a computer program product implemented on one or more computer readable storage media (but not limited to a phase change memory (PRAM), a static random access memory (SRAM), a dynamic random access memory (DRAM), other types of random access memory (RAM), a read-only memory (ROM), an electrically erasable programmable read-only memory (EEPROM), a flash memory or other optical, magnetic storage media, etc.) containing computer usable program code.

[0097] The computer readable storage medium provided by the above-mentioned embodiments of the present application has the same beneficial effects as the method adopted, run or realized by the application program stored therein.

[0098] The present application is described with reference to flowcharts and / or block diagrams according to the methods, devices (systems) and computer program products of the embodiments of the present application. It should be understood that each flow and / or block in the flowcharts and / or block diagrams, and the combination of the flows and / or blocks in the flowcharts and / or block diagrams can be implemented by computer program instructions. These computer program instructions can be provided to a general-purpose computer, a special-purpose computer, an embedded processor or other programmable data processing devices to produce a machine, so that the instructions executed by the computer or other programmable data processing devices produce a device that implements the flowcharts and / or block diagrams. Figure 1 The flow or the combination of flows and / or blocks Figure 1 The device that implements the functions specified in the flow or the combination of flows and / or blocks.

[0099] These computer program instructions can also be stored in a computer readable storage medium, which can guide the computer or other programmable data processing devices to work in a specific way, so that the instructions stored in the computer readable storage medium produce a product including instruction devices, which implement the flowcharts and / or block diagrams. Figure 1 The flow or the combination of flows and / or blocks Figure 1 The device that implements the functions specified in the flow or the combination of flows and / or blocks.

[0100] These computer program instructions can also be loaded into a computer or other programmable data processing devices, so that a series of operational steps are generated to realize the computer-implemented processes in the computer or other programmable devices, and the instructions executed in the computer or other programmable devices provide the steps for implementing the functions specified in the flowchart Figure 1 one or more flows and / or blocks Figure 1 one or more blocks or multiple blocks.

[0101] The present application is not limited only to the described embodiments and implementations, and therefore additional advantages and modifications will readily occur to those skilled in the art. The application in its broader aspects is therefore not limited to the specific details, representative devices, and illustrative examples shown and described herein. Accordingly, various modifications and changes can be made thereto without departing from the broader art to which the present application pertains, and the ambit of the appended claims is measured by the language of the claims.

Claims

1. A method for generating a security pattern with an arbitrary image distance, characterized by, The method comprises the following steps: S1, design pattern data processing; The step S1 further comprises a step S11 of making a design pattern to be imaged, and performing binary processing on the design pattern, and discretizing into a binary matrix according to a required resolution, the binary matrix being represented as follows, m 1, n 1 is the pixel coordinate: ； Wherein, m 1 、n 1 the value range of 1~5000, in the design of different image distance, the value of binary matrix is h 1 can be, as follows: ； When the coordinate is a design pattern, the value of the blank area is 0; S2, basic imaging microstructure calculation; S3, obtaining an axis coordinate according to an array rule; S4, calculating an anisotropic imaging microstructure; Step S4 further comprises step S41: obtaining the imaging height corresponding to the binary matrix in S11 by the value of the coordinate of the base imaging microstructure h 1, by the imaging height h 1 and the refraction angle deviation equation w ( x ) to obtain the image formed by the entire base imaging microstructure, rounding the imaging position to the same resolution, and obtaining the corresponding position information through the binary matrix. The position with a matrix value of 1 is imaged as a black region, and the structure is processed into a special shape. The region with a matrix value of 0 is not processed, i.e. the special-shaped imaging microstructure at that position is obtained. S5, cyclically generating an anisotropic imaging microstructure array according to an arrangement rule, and when a point light source is irradiated on the anisotropic imaging microstructure array, an anti-counterfeiting pattern for imaging is realized.

2. The method of claim 1, wherein the method of generating a security pattern having an arbitrary image distance is characterized by, Step S2 further comprises step S21: the base imaging microstructure is any axisymmetric microstructure with converging or diverging light function, the axisymmetric microstructure has a vertical bottom plane and a top axisymmetric curved surface, and the profile curve equation g(x) of the axis cross section represents the base imaging microstructure, x x is the distance of a point on the bottom plane from the axis center, and when the base imaging microstructure is a hemisphere,​ （1） r is the radius of the hemisphere, and g is the height of the hemisphere from the base plane. The maximum height gmax occurs at the center of the hemisphere, and the minimum height gmin occurs at the edge of the hemisphere. The height g is a function of the distance r from the center of the hemisphere, and is given by the equation: x x x r x The height g is a function of the distance r from the center of the hemisphere, and is given by the equation:​​​​ 3. The method of claim 1, wherein the method of generating a security pattern having an arbitrary image distance is characterized by, The basic imaging microstructure array is arranged in a manner of orthogonality, a flat quadrilateral, or a honeycomb arrangement.

4. A computer device comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, characterized in that, The processor executes the program to implement the anti-counterfeiting pattern generation method with an arbitrary image distance according to any one of claims 1-3.

5. A computer-readable storage medium storing a computer-readable program, the computer-readable program comprising instructions that cause a computer to perform: The program is executed by the processor to implement the anti-counterfeiting pattern generation method with an arbitrary image distance according to any one of claims 1-3.

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