A transfer device for silicon wafer copper plating pretreatment

Abstract

The present invention provides a transfer device for silicon wafer copper plating pretreatment, which is used to solve the three major technical challenges faced by the prior art in the transfer process of silicon wafer copper plating pretreatment, namely oxidation control, cleanliness maintenance and surface integrity, which seriously affect the surface quality of silicon wafer film formation and make it difficult to meet the advanced process requirements of integrated circuits. The present invention provides a transfer device for silicon wafer copper plating pretreatment, comprising: a rack, a pre-cleaning chamber, a vacuum transition chamber, an inert gas buffer chamber, a sealed copper plating line and a silicon wafer circulation conveying mechanism. Through the three-level sealed cavity structure from the pre-cleaning chamber to the inert gas buffer chamber and then to the vacuum transition chamber, the exposure time of the silicon wafer to the air is greatly shortened in a physical isolation manner, preventing the silicon wafer from being oxidized before copper plating, and ensuring the surface quality of the silicon wafer film formation; by making the silicon wafer carrier and the unloading guide carrier cross and non-contact, the material is unloaded into the sealed copper plating line, and the silicon wafer is conveyed non-contactly to prevent lattice damage.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon wafer anti-oxidation transportation, in particular to a transportation device for silicon wafer copper plating pre-treatment. Background Art

[0002] With the rise of modern 3D integration technology, integrated circuit nano-processing has now entered the sub-7 nanometer node, and the copper interconnection process has also approached the physical limit of the surface quality requirements of silicon wafers. However, the existing technology still faces three major technical problems in the transportation process of silicon wafer copper plating pre-treatment: oxidation control, cleanliness maintenance and surface integrity. These problems seriously affect the surface quality of silicon wafer film formation and make it difficult to meet the advanced process requirements of integrated circuits.

[0003] Copper forms an insulating oxide layer at standard electrode potential, causing a surge in interconnect resistance. When traditional transfer equipment is exposed to air, an oxide layer forms on the surface of the silicon wafer, damaging the heteroepitaxial growth of the copper thin film. Chinese Utility Model Patent Publication No. CN213078928U, "An Anti-Oxidation Conveyor Device for Integrated Circuit Board Production," describes a method for preventing oxidation by spraying an antioxidant onto the two end faces of the integrated circuit board using nozzles on the inner sidewall of the first U-shaped plate. However, the open structure of the conveyor device exposes the silicon wafer to air before the end faces are sprayed with the antioxidant, making oxygen permeability difficult to control and still failing to completely eliminate interfacial oxidation. Furthermore, the device uses mechanical transmission, and the space between the transmission mechanism and the silicon wafer is not isolated. Friction particles generated by mechanical transmission can cause dust contamination on the silicon wafer surface, increasing defect density. Finally, the device clamps the integrated circuit board by controlling the distance between the movable and fixed blocks, creating a compressive contact with the silicon wafer similar to traditional clamps. This can easily cause scratches and lattice damage, increasing silicon wafer processing costs. Summary of the Invention

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a transfer device for silicon wafer copper plating pretreatment, which is used to solve the three major technical challenges faced by the prior art in the transfer process of silicon wafer copper plating pretreatment, namely oxidation control, cleanliness maintenance and surface integrity, which seriously affect the surface quality of silicon wafer film formation and make it difficult to meet the advanced process requirements of integrated circuits.

[0005] To achieve the above-mentioned and other related objectives, the present invention provides a transfer device for silicon wafer copper plating pretreatment, comprising: a frame, a pre-cleaning chamber and a vacuum transition chamber installed on the left side of the frame, an inert gas buffer chamber provided between the pre-cleaning chamber and the vacuum transition chamber, a sealed copper plating line installed on the upper portion of the frame, and the pre-cleaning chamber, the inert gas buffer chamber, the vacuum transition chamber and the sealed copper plating line are fixedly connected, and a silicon wafer circulation conveying mechanism is installed between the pre-cleaning chamber, the inert gas buffer chamber and the vacuum transition chamber;

[0006] The pre-cleaning chamber is used to remove particulate impurities on the surface of the silicon wafer using chemical liquid;

[0007] The inert gas buffer chamber is used to control the oxygen concentration in the space where the silicon wafer is located after the silicon wafer comes out of the pre-cleaning chamber, thereby reducing the exposure time and exposure degree of the single silicon wafer;

[0008] Wherein, the vacuum transition chamber is used to provide a vacuum space for silicon wafer transfer;

[0009] Wherein, the sealed copper-plated wire is used to perform copper plating on silicon wafers;

[0010] The silicon wafer circulation conveying mechanism is used to load the silicon wafers and drive the silicon wafers to flow between the pre-cleaning chamber, the inert gas buffer chamber and the vacuum transition chamber, and then convey the silicon wafers to the sealed copper plating line;

[0011] The pre-wash chamber includes a front wash chamber, a rear wash transfer chamber and a first transfer guide groove. The front wash chamber and the rear wash transfer chamber are installed on the upper wall of the left end of the frame, and the front wash chamber and the rear wash transfer chamber are fixedly connected front to back. The first transfer guide groove is opened on the connecting wall of the front wash chamber and the rear wash transfer chamber.

[0012] The inert gas buffer chamber includes a front gas buffer chamber, a rear buffer transfer chamber and a second transfer guide groove. The front gas buffer chamber and the rear buffer transfer chamber are fixedly installed on the upper part of the front cleaning chamber and the rear cleaning transfer chamber, and the front gas buffer chamber and the rear buffer transfer chamber are fixedly connected in front and back. The second transfer guide groove is opened on the connecting wall of the front gas buffer chamber and the rear buffer transfer chamber.

[0013] The vacuum transition chamber includes a front transition chamber, a rear transition transfer chamber, and a third transfer guide groove. The right walls of the front gas buffer chamber and the rear buffer transfer chamber are fixedly connected to the front transition chamber and the rear transition transfer chamber, and the right parts of the front transition chamber and the rear transition transfer chamber are fixedly arranged on the frame. The third transfer guide groove is opened on the connecting wall of the front transition chamber and the rear transition transfer chamber.

[0014] The silicon wafer circulation conveying mechanism includes a positioning substrate, a loading platform, an auxiliary conveyor belt, a driving sprocket, a driven chain, a directional slider, a silicon wafer carrier, a latch and a unloading guide carrier. A positioning substrate is fixed between the lower right wall of the front cleaning chamber and the lower left wall of the front transition chamber. A loading platform is fixed on the upper part of the positioning substrate. An auxiliary conveyor belt is installed for transmission in the loading platform. A driving sprocket is rotatably installed at the lower left corner of the rear cleaning conveying chamber, the upper left corner of the rear buffer conveying chamber, and the upper right corner and lower part of the rear transition conveying chamber respectively. A driven chain is connected to the chain transmission sleeve between the four driving sprockets. Fifteen directional sliders are equidistantly installed on the driven chain through fifteen pins, and the fifteen directional sliders are all slidably installed in the first conveying guide groove, the second conveying guide groove and the third conveying guide groove. Silicon wafer carriers are installed on the front walls of the fifteen directional sliders, and silicon wafers are loaded by the robot when the silicon wafer carriers pass through the upper part of the auxiliary conveyor belt. A unloading guide carrier is fixed between the inner side of the front wall of the front transition cavity and the inner side of the front wall of the loading end of the sealed copper-plated wire, and the movement path of the fifteen silicon wafer carriers intersects with the left end of the unloading guide carrier. The unloading guide carrier intermittently crosses the silicon wafer carrier but does not contact it.

[0015] Optionally, the pre-cleaning chamber includes a first sealing installation groove, a liquid leakage-proof self-opening and closing component and a nitrogen curtain. A first sealing installation groove is opened at the lower part of the right wall of the front cleaning chamber and the rear cleaning transfer chamber. The first sealing installation groove is equipped with a liquid leakage-proof self-opening and closing component, and a nitrogen curtain is provided at the upper outlet of the front cleaning chamber.

[0016] Optionally, the inert gas buffer chamber includes a vacuum air curtain and a plasma activator mounting hole, a vacuum air curtain is installed at the right wall outlet of the front gas buffer chamber, a plasma activator mounting hole is opened at the upper left corner of the rear wall of the rear buffer transfer chamber, and a plasma activator is installed in the plasma activator mounting hole.

[0017] Optionally, the vacuum transition chamber includes a second sealing installation groove, an anti-leakage self-opening and closing component and a molecular pump installation hole. A second sealing installation groove is opened on the lower left wall of the front transition chamber and the rear transition transfer chamber, and an anti-leakage self-opening and closing component is installed in the second sealing installation groove. A molecular pump installation hole is opened in the upper right corner of the rear wall of the rear transition transfer chamber, and a molecular pump is installed in the molecular pump installation hole.

[0018] Optionally, the liquid leakage prevention self-opening and closing component and the air leakage prevention self-opening and closing component both include a return spring, a pressure plate and an elastic sealing block, and several pairs of return springs are equidistantly installed on the upper and lower walls of the first sealing installation groove and the second sealing installation groove, and a pressure plate is fixed between the outer ends of several return springs on the same side, and four pressure plates are slidably installed in the first sealing installation groove and the second sealing installation groove in groups of two, and elastic sealing blocks are fixed on the outer side surfaces of the four pressure plates, and the two elastic sealing blocks on the same vertical line are intermittently closed, and the elastic sealing blocks are in the shape of an inverted right-angled trapezoid when viewed from the front, and the two elastic sealing blocks are sealed with the front cleaning chamber and the front transition chamber when closed, and form a triangular opening to the right when the two elastic sealing blocks are closed.

[0019] Optionally, the first conveying guide groove, the second conveying guide groove and the third conveying guide groove are connected, and the first conveying guide groove, the second conveying guide groove and the third conveying guide groove form a rectangular frame groove, and the four inner corners of the rectangular frame groove are chamfered.

[0020] Optionally, the silicon wafer carrier includes a front-opening carrier frame, an extrusion guide bar and an equidistant conveying carrier bar. The rear wall of the front-opening carrier frame is fixedly connected to the front wall of the directional slider, and the front-opening carrier frame is a three-sided frame with an opening at the front. An extrusion guide bar is provided at the left end of the front-opening carrier frame, and the extrusion guide bar is triangular when viewed from the front. The left two sides of the triangle are parallel to the triangular opening edges of the elastic sealing block. Eight equidistant conveying carrier bars are fixed in the front-opening carrier frame, and the silicon wafers are intermittently placed on the eight equidistant conveying carrier bars in the front-opening carrier frame.

[0021] Optionally, the blanking guide carrier includes a rear opening carrier frame and equidistant blanking carrier bars, the front wall of the rear opening carrier frame is fixedly connected to the inner side of the front wall of the front transition cavity and the upper feeding end of the sealed copper-plated wire, and the rear opening carrier frame is a three-sided frame with a rear opening, and fifty equidistant conveying carrier bars are fixed in the blanking guide carrier, and the equidistant conveying carrier bars of the blanking guide carrier are cross-arranged when they intersect with the equidistant conveying carrier bars of the front opening carrier frame.

[0022] As described above, the transfer device for silicon wafer copper plating pretreatment of the present invention has at least the following beneficial effects:

[0023] 1. The three-stage sealed chamber structure, from the pre-cleaning chamber to the inert gas buffer chamber and then to the vacuum transition chamber, greatly shortens the exposure time of silicon wafers to the air through physical isolation, prevents oxidation of silicon wafers before copper plating, and ensures the surface quality of silicon wafer film formation;

[0024] 2. By dividing the pre-cleaning chamber, inert gas buffer chamber, and vacuum transition chamber into front and rear chambers, and installing the drive and active conveying components of the silicon wafer circulation conveying mechanism in the rear chamber, friction particles generated by the mechanical movement of the drive and active conveying components are prevented from causing dust contamination on the silicon wafer surface, ensuring a high degree of cleanliness during silicon wafer pre-treatment.

[0025] 3. Through the installation of anti-liquid leakage self-opening and closing components and anti-gas leakage self-opening and closing components, the cavity sealing of the pre-cleaning chamber and the vacuum transition chamber is achieved, ensuring the continuous transmission of silicon wafers in a closed environment;

[0026] 4. By using eight equidistant conveying bars to support the silicon wafer carrier, the direction of the silicon wafer carrier during the conveying process is fixed so that it always remains horizontal. The silicon wafer inside does not need to be clamped and the position can be kept stable. The silicon wafer carrier and the unloading guide carrier are crossed and do not contact each other, and the silicon wafer is unloaded into the sealed copper-plated wire and transported. The silicon wafer is transported non-contactly, which prevents damage to the silicon wafer's lattice. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 Shown is a front view of the overall structure of the present invention.

[0028] Figure 2 Shown is a front perspective view of the overall structure of the present invention.

[0029] Figure 3 It shows a southeast perspective view of the overall structure of the present invention without the sealed copper-plated wire.

[0030] Figure 4 Shown is a front perspective view of the silicon wafer circulation conveying mechanism of the present invention.

[0031] Figure 5 Shown is a southeast perspective stereogram of the cooperation structure of the directional slider and the silicon wafer carrier of the present invention.

[0032] Figure 6 It shows a cross-sectional stereoscopic view of the cooperation structure of the front cavity and the rear cavity of the present invention from a southeast perspective.

[0033] Figure 7 It shows a southeast perspective stereoscopic view of the cooperation structure between the rear chamber and the silicon wafer circulation conveying mechanism of the present invention.

[0034] Figure 8 Shown is a front stereoscopic view of the transmission structure of the silicon wafer circulation conveying mechanism of the present invention between the front chamber and the rear chamber.

[0035] Figure 9 It shows a southeast perspective stereoscopic cross-sectional view of the overall structure of the present invention without the sealed copper-plated wire.

[0036] Figure 10 Shown is a southeast perspective stereogram of the liquid leakage-proof self-opening and closing component structure of the present invention.

[0037] Component number description

[0038] 1. Frame;

[0039] 2. Pre-cleaning chamber; 201. Front cleaning chamber; 202. Post-cleaning transfer chamber; 203. First transfer guide groove; 204. First seal mounting groove; 205. Leak-proof automatic opening and closing assembly; 2051. Return spring; 2052. Pressure plate; 2053. Elastic sealing block; 206. Nitrogen curtain;

[0040] 3. Inert gas buffer chamber; 301. Front gas buffer chamber; 302. Rear buffer transfer chamber; 303. Second transfer guide groove; 304. Vacuum air curtain; 305. Plasma activator mounting hole;

[0041] 4. Vacuum transition chamber; 401. Front transition chamber; 402. Rear transition transfer chamber; 403. Third transfer guide groove; 404. Second sealing installation groove; 405. Anti-leakage automatic opening and closing assembly; 406. Molecular pump installation hole;

[0042] 5. Sealed copper wire;

[0043] 6. Silicon wafer circulation conveying mechanism; 601. Positioning substrate; 602. Loading platform; 603. Auxiliary conveyor belt; 604. Driving sprocket; 605. Driven chain; 606. Directional slider; 607. Silicon wafer carrier; 6071. Front opening carrier frame; 6072. Extrusion guide bar; 6073. Equidistant conveying carrier bar; 608. Locking pin; 609. Unloading guide carrier; 6091. Rear opening carrier frame; 6092. Equidistant unloading carrier bar. DETAILED DESCRIPTION

[0044] The following describes the implementation of the present invention through specific embodiments. People skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

[0045] As mentioned in the background art, copper forms an insulating oxide layer at standard electrode potential, causing a surge in interconnect resistance. When conventional transfer equipment is exposed to air, an oxide layer forms on the surface of the silicon wafer, destroying the heteroepitaxial growth of the copper thin film. Chinese utility model patent publication number CN213078928U, "An Anti-Oxidation Conveyor Device for Integrated Circuit Board Production," discloses that the integrated circuit board can be protected from oxidation by spraying an antioxidant onto both end faces of the integrated circuit board using a nozzle on the inner sidewall of a first U-shaped plate. However, the open structural design of the conveyor device exposes the silicon wafer to air before the end faces are sprayed with the antioxidant, making oxygen permeability difficult to control and still failing to completely resolve interfacial oxidation. Furthermore, the device uses mechanical transmission, and the space between the transmission drive mechanism and the silicon wafer is not isolated. Friction particles generated by mechanical transmission can cause dust contamination on the silicon wafer surface, leading to an increase in defect density. Finally, the device clamps the integrated circuit board by controlling the distance between the movable block and the fixed block, squeezing and contacting the silicon wafer like a traditional clamp, which can easily cause scratches and lattice damage, increasing the processing cost of the silicon wafer.

[0046] Example 1

[0047] like Figure 1-Figure 2 As shown, in order to solve the above problems, a three-stage sealed cavity structure, from a pre-cleaning chamber 2 to an inert gas buffer chamber 3, and then to a vacuum transition chamber 4, is used to greatly shorten the exposure time of silicon wafers to the air in a physical isolation manner, thereby preventing the silicon wafers from oxidizing before copper plating and ensuring the surface quality of the silicon wafer film. Therefore, a transfer device for silicon wafer copper plating pretreatment is invented, comprising: a frame 1, a pre-cleaning chamber 2 and a vacuum transition chamber 4 are installed on the left side of the frame 1, an inert gas buffer chamber 3 is provided between the pre-cleaning chamber 2 and the vacuum transition chamber 4, a sealed copper plating line 5 is installed on the upper part of the frame 1, and the pre-cleaning chamber 2, the inert gas buffer chamber 3, the vacuum transition chamber 4 and the sealed copper plating line 5 are fixedly connected, and a silicon wafer circulation conveying mechanism 6 is installed between the pre-cleaning chamber 2, the inert gas buffer chamber 3 and the vacuum transition chamber 4;

[0048] During use, after the silicon wafer is loaded into the silicon wafer circulation conveyor 6, it first enters the pre-cleaning chamber 2, passes through a chemical solution to remove surface particulate impurities, and then enters the inert gas buffer chamber 3. This chamber is injected with nitrogen, which has a low oxygen content, preventing exposure of the silicon wafer. At the same time, it can activate the surface of the silicon wafer and improve the adhesion of the copper film on the silicon wafer surface. Finally, the silicon wafer is transported losslessly to the sealed copper plating line 5 in the vacuum transition chamber 4. After entering the sealed copper plating line 5, the silicon wafer is copper-plated. This method reduces the exposure time of the silicon wafer throughout the process, strictly controls the thickness of the silicon wafer's oxide layer, prevents it from affecting the quality of copper plating, and ensures good film quality on the silicon wafer surface, meeting the advanced process requirements of subsequent integrated circuits. It also solves the problem of traditional open transmission schemes that are difficult to control oxygen permeability and cannot completely solve the problem of interface oxidation.

[0049] Example 2

[0050] like Figure 1-Figure 3 and Figures 6-10 As shown, in order to solve the above problems, the pre-cleaning chamber 2, the inert gas buffer chamber 3 and the vacuum transition chamber 4 are divided into front and rear chambers, and the driving and active conveying components of the silicon wafer circulation conveying mechanism 6 are installed in the rear chamber to prevent the friction particles generated by the mechanical movement of the driving and active conveying components from causing dust contamination on the surface of the silicon wafer, so that the cleanliness of the silicon wafer pre-treatment is maintained at a high level. Therefore, a transfer device for silicon wafer copper plating pretreatment is invented, which also includes: a pre-cleaning chamber 2, an inert gas buffer chamber 3 and a vacuum transition chamber 4. The pre-cleaning chamber 2 includes a front cleaning chamber 201, a rear cleaning transfer chamber 202, a first transfer guide groove 203, a first sealing installation groove 204, a leak-proof liquid self-opening and closing component 205 and a nitrogen curtain 206. The front cleaning chamber 201 and the rear cleaning transfer chamber 202 are installed on the upper wall of the left end of the frame 1, and the front cleaning chamber 201 and the rear cleaning transfer chamber 202 are fixedly connected front and back. The first transfer guide groove 203 is opened on the connecting wall of the front cleaning chamber 201 and the rear cleaning transfer chamber 202. The first sealing installation groove 204 is opened on the lower part of the right wall of the front cleaning chamber 201 and the rear cleaning transfer chamber 202. The leak-proof liquid self-opening and closing component 205 is installed in the first sealing installation groove 204. The upper outlet of the front cleaning chamber 201 is provided with a nitrogen curtain 206, and the nitrogen curtain 206 is a double-layer cross setting.

[0051] Among them, such as Figure 1-Figure 3 and Figure 6-Figure 9 As shown, the inert gas buffer chamber 3 includes a front gas buffer chamber 301, a rear buffer transfer chamber 302, a second transfer guide groove 303, a vacuum air curtain 304 and a plasma activator mounting hole 305. The front gas buffer chamber 301 and the rear buffer transfer chamber 302 are fixedly installed on the upper parts of the front cleaning chamber 201 and the rear cleaning transfer chamber 202, respectively, and the front gas buffer chamber 301 and the rear buffer transfer chamber 302 are fixedly connected front to back. The second transfer guide groove 303 is provided on the connecting wall of the front gas buffer chamber 301 and the rear buffer transfer chamber 302. A vacuum air curtain 304 is installed at the right wall outlet of the front gas buffer chamber 301. A plasma activator mounting hole 305 is provided at the upper left corner of the rear wall of the rear buffer transfer chamber 302, and a plasma activator is installed in the plasma activator mounting hole 305.

[0052] Among them, such as Figure 1-Figure 3 and Figure 6-Figure 9As shown, the vacuum transition chamber 4 includes a front transition chamber 401, a rear transition transfer chamber 402, a third transfer guide groove 403, a second sealing installation groove 404, an anti-leakage self-opening and closing component 405 and a molecular pump installation hole 406. The right walls of the front gas buffer chamber 301 and the rear buffer transfer chamber 302 are fixedly connected with the front transition chamber 401 and the rear transition transfer chamber 402, and the right parts of the front transition chamber 401 and the rear transition transfer chamber 402 are fixedly arranged on the frame 1. The third transfer guide groove 403 is provided on the connecting wall of the front transition chamber 401 and the rear transition transfer chamber 402, the lower left wall of the front transition chamber 401 and the rear transition transfer chamber 402 is provided with a second sealing installation groove 404, the anti-leakage self-opening and closing component 405 is installed in the second sealing installation groove 404, the upper right corner of the rear wall of the rear transition transfer chamber 402 is provided with a molecular pump installation hole 406, and a molecular pump is installed in the molecular pump installation hole 406.

[0053] Specifically, the front cleaning chamber 201, the front gas buffer chamber 301 and the front transition chamber 401 are responsible for silicon wafer processing. After the silicon wafer is chemically cleaned in the front cleaning chamber 201, it enters the front gas buffer chamber 301 through the nitrogen curtain 206. The nitrogen curtain 206 at the outlet of the pre-cleaning chamber 2 forms a gas barrier between the pre-cleaning chamber 2 and the inert gas buffer chamber 3, which can reduce oxygen penetration when the silicon wafer passes through. At the same time, the plasma activator installed in the rear buffer transfer chamber 302 through the plasma activator installation hole 305 applies a high-frequency electric field to ionize the gas on the surface of the silicon wafer, activates the silicon wafer surface, and enhances the adhesion of the copper plating. After the silicon wafer passes through The vacuum air curtain 304 enters the front transition chamber 401 and is finally transferred to the sealed copper-plated wire 5 at the right end of the front transition chamber 401. The molecular pump controls the vacuum transition chamber 4 to form a high vacuum environment to suppress the formation of an oxide layer during the circulation of silicon wafers. Then the transmission chamber 202, the rear buffer transmission chamber 302 and the rear transition transmission chamber 402 are cleaned to accommodate the drive components of the silicon wafer circulation transmission mechanism 6. The friction particles generated by the drive components when running in the rear chamber are confined in the rear chamber and cannot enter the front chamber to contact the silicon wafers, thereby eliminating mechanical particle contamination from the source. In this way, the particle contamination and oxidation problems during the silicon wafer transportation process are effectively solved.

[0054] Among them, such as Figure 3 、 Figure 6 and Figures 8-10As shown, the liquid leakage prevention self-opening and closing component 205 and the air leakage prevention self-opening and closing component 405 both include a return spring 2051, a pressure plate 2052 and an elastic sealing block 2053, and the upper and lower walls of the first sealing installation groove 204 and the second sealing installation groove 404 are equidistantly installed with several pairs of return springs 2051, and a pressure plate 2052 is fixed between the outer ends of several return springs 2051 on the same side, and four pressure plates 2052 are slidably installed in the first sealing installation groove 204 and the second sealing installation groove 404 in groups of two, and the outer side surfaces of the four pressure plates 2052 are all fixed with elastic sealing blocks 2053, and the two elastic sealing blocks 2053 on the same vertical line are intermittently closed, and the elastic sealing blocks 2053 are in the shape of an inverted right-angled trapezoid when viewed from the front. When the two elastic sealing blocks 2053 are closed, they are sealed with the front cleaning chamber 201 and the front transition chamber 401, and the two elastic sealing blocks 2053 form a triangular opening to the right when closed.

[0055] Specifically, when the silicon wafer carrier 607 passes through the liquid leakage prevention self-opening and closing component 205 located on the right wall of the pre-cleaning chamber 2 or the air leakage prevention self-opening and closing component 405 located on the left wall of the vacuum transition chamber 4, the silicon wafer carrier 607 pushes open the triangular opening formed by the elastic sealing block 2053, and the pressure plate 2052 is pressurized and slides and retracts into the first sealing installation groove 204 or the second sealing installation groove 404, squeezing the return spring 2051, so that the silicon wafer carrier 607 drives the silicon wafer to pass without resistance. After passing, the return spring 2051 rebounds, drives the pressure plate 2052, controls the elastic sealing block 2053 to close, realizes the cavity sealing of the pre-cleaning chamber 2 and the vacuum transition chamber 4, and ensures the continuous transmission of silicon wafers in a closed environment.

[0056] Example 3

[0057] See also Figures 1-9To solve the above problems, eight equally spaced transport carriers 6073 are used to support the silicon wafer carrier 607, and the direction of the silicon wafer carrier 607 during the transport process is fixed so that it always remains horizontal. The silicon wafer inside does not need to be clamped and its position can be kept stable. The silicon wafer carrier 607 is also made to cross and not contact the unloading guide carrier 609, unloading the silicon wafer into the sealed copper plating line 5, transporting the silicon wafer, and transporting the silicon wafer in a non-contact manner to prevent damage to the lattice of the silicon wafer. Therefore, a transfer device for silicon wafer copper plating pre-treatment is invented, which also includes: a silicon wafer circulating conveying mechanism 6, the silicon wafer circulating conveying mechanism 6 includes a positioning substrate 601, a loading platform 602, an auxiliary conveyor belt 603, a driving sprocket 604, a driven chain 605, a directional slider 606, a silicon wafer carrier 607, a latch 608 and an unloading guide carrier 609. The positioning substrate 601 is fixed between the lower right wall of the front cleaning chamber 201 and the lower left wall of the front transition chamber 401. A loading platform 602 is fixed on the upper part of the positioning base plate 601, and an auxiliary conveyor belt 603 is installed in the loading platform 602. A driving sprocket 604 is rotatably installed at the lower left corner of the rear cleaning conveying chamber 202, the upper left corner of the rear buffer conveying chamber 302, and the upper right corner and lower part of the rear transition conveying chamber 402. A driven chain 605 is connected to the four driving sprockets 604 through a chain transmission sleeve. Fifteen fixed pins 608 are equidistantly installed on the driven chain 605. The directional slider 606, the first conveying guide groove 203, the second conveying guide groove 303 and the third conveying guide groove 403 are connected, and the first conveying guide groove 203, the second conveying guide groove 303 and the third conveying guide groove 403 form a rectangular frame groove, and the four corners of the inner frame of the rectangular frame groove are chamfered. The fifteen directional sliders 606 are slidably installed in the first conveying guide groove 203, the second conveying guide groove 303 and the third conveying guide groove 403. A silicon wafer carrier 607 is installed on the front wall of each directional slider 606, and the silicon wafer carrier 607 is loaded with silicon wafers by the robot when it passes from the upper part of the auxiliary conveyor belt 603. A discharge guide carrier 609 is fixed between the inner side of the front wall of the front transition chamber 401 and the inner side of the front wall of the loading end of the sealed copper-plated wire 5, and the movement path of the fifteen silicon wafer carriers 607 intersects with the left end of the discharge guide carrier 609. The discharge guide carrier 609 intermittently crosses the silicon wafer carrier 607 but does not contact it.

[0058] Among them, such as Figure 5 and Figure 9As shown, the silicon wafer carrier 607 includes a front-opening carrier frame 6071, an extrusion guide bar 6072 and an equidistant conveying carrier bar 6073. The rear wall of the front-opening carrier frame 6071 is fixedly connected to the front wall of the directional slider 606, and the front-opening carrier frame 6071 is a three-sided frame with an opening at the front. An extrusion guide bar 6072 is provided at the left end of the front-opening carrier frame 6071, and the extrusion guide bar 6072 is triangular when viewed from the front, and the left two sides of the triangle are parallel to the triangular opening edges of the elastic sealing block 2053. Eight equidistant conveying carrier bars 6073 are fixed in the front-opening carrier frame 6071, and the silicon wafers are intermittently placed on the eight equidistant conveying carrier bars 6073 in the front-opening carrier frame 6071.

[0059] Among them, such as Figure 4 and Figure 9 As shown, the blanking guide carrier 609 includes a rear opening carrier frame 6091 and equidistant blanking carrier strips 6092. The front wall of the rear opening carrier frame 6091 is fixedly connected to the inner side of the front wall of the front transition cavity 401 and the feeding end of the sealed copper-plated wire 5, and the rear opening carrier frame 6091 is a three-sided frame with a rear opening. Fifty equidistant conveying carrier strips 6073 are fixed in the blanking guide carrier 609, and the equidistant conveying carrier strips 6073 of the blanking guide carrier 609 are cross-arranged when they intersect with the equidistant conveying carrier strips 6073 of the front opening carrier frame 6071.

[0060] Specifically, the first conveying guide groove 203, the second conveying guide groove 303, and the third conveying guide groove 403 are connected to form a rectangular frame groove. The four active sprockets 604 can drive the driven chain 605 clockwise to run along the guide rail closed loop, driving the directional slider 606 to slide in the rectangular frame groove, so that the fifteen groups of silicon wafer carriers 607 are circulated clockwise between the pre-cleaning chamber 2, the inert gas buffer chamber 3 and the vacuum transition chamber 4. First, when the silicon wafer carrier 607 passes over the auxiliary conveyor belt 603, the loading robot loads the silicon wafer into the silicon wafer carrier 607, and then enters each chamber for pre-treatment and anti-oxidation transportation. During the circulating transmission process, the chamfered four corners of the inner frame of the rectangular frame groove can reduce the friction resistance of the directional slider 606 when passing through the bend of the rectangular frame groove, and the rectangular frame groove can limit the direction of the directional slider 606 during the sliding process, ensuring that the silicon wafer carrier 607 is transported. The orientation is maintained during movement, so that the horizontal stability of the carrier is strong, which prevents the silicon wafer from falling out during transportation, and the triangular extrusion guide bar 6072 of the silicon wafer carrier 607 matches the triangular opening of the elastic sealing block 2053. When passing through the elastic sealing block 2053, the shape of the front opening carrier frame 6071 cooperates with the eight equidistant transmission carriers 6073, which can embed the silicon wafer and realize non-extrusion passage through the sealed cavity. Finally, when the silicon wafer carrier 607 passes through the unloading guide carrier 609, the silicon wafer is transferred to the unloading guide carrier 609 by the cross transmission of the silicon wafer carrier 607 and the unloading guide carrier 609. The inclination of the unloading guide carrier 609 is set, and the height difference is used to make the silicon wafer slide into the sealed copper-plated wire 5. There is no mechanical extrusion contact throughout the process, so that the silicon wafer slides into the sealed copper-plated wire 5, while maintaining the position accuracy of the silicon wafer and completely avoiding the clamping damage of traditional transmission and positioning tools.

[0061] Although the present invention has been described in detail above using general descriptions and specific embodiments, it will be apparent to those skilled in the art that modifications and improvements may be made thereto. Therefore, such modifications and improvements, without departing from the spirit of the present invention, are intended to be within the scope of protection claimed herein.

Claims

1. A transfer device for silicon wafer copper plating pretreatment, characterized in that: include: A rack (1), wherein a pre-cleaning chamber (2) and a vacuum transition chamber (4) are installed on the left side of the rack (1), an inert gas buffer chamber (3) is provided between the pre-cleaning chamber (2) and the vacuum transition chamber (4), a sealed copper plating wire (5) is installed on the upper part of the rack (1), and the pre-cleaning chamber (2), the inert gas buffer chamber (3), the vacuum transition chamber (4) and the sealed copper plating wire (5) are fixedly connected, and a silicon wafer circulation conveying mechanism (6) is installed between the pre-cleaning chamber (2), the inert gas buffer chamber (3) and the vacuum transition chamber (4); The pre-cleaning chamber (2) is used to remove particulate impurities on the surface of the silicon wafer using a chemical solution; The inert gas buffer chamber (3) is used to control the oxygen concentration in the space where the silicon wafer is located after the silicon wafer comes out of the pre-cleaning chamber (2), thereby reducing the exposure time and exposure degree of the single silicon wafer; Wherein, the vacuum transition chamber (4) is used to provide a vacuum space for silicon wafer transmission; Wherein, the sealed copper-plated wire (5) is used for copper-plating silicon wafers; The silicon wafer circulation conveying mechanism (6) is used to load the silicon wafers and drive the silicon wafers to circulate between the pre-cleaning chamber (2), the inert gas buffer chamber (3) and the vacuum transition chamber (4), and then convey the silicon wafers to the sealed copper plating line (5); The pre-cleaning chamber (2) comprises a front cleaning chamber (201), a rear cleaning transfer chamber (202) and a first transfer guide rail groove (203); the front cleaning chamber (201) and the rear cleaning transfer chamber (202) are installed on the upper wall of the left end of the frame (1); the front cleaning chamber (201) and the rear cleaning transfer chamber (202) are fixedly connected front to back; the first transfer guide rail groove (203) is opened on the connecting wall of the front cleaning chamber (201) and the rear cleaning transfer chamber (202); The inert gas buffer chamber (3) comprises a front gas buffer chamber (301), a rear buffer transfer chamber (302) and a second transfer guide groove (303); the front gas buffer chamber (301) and the rear buffer transfer chamber (302) are fixedly mounted on the upper portions of the front cleaning chamber (201) and the rear cleaning transfer chamber (202), respectively; the front gas buffer chamber (301) and the rear buffer transfer chamber (302) are fixedly connected front to back; and the second transfer guide groove (303) is provided on the connecting wall of the front gas buffer chamber (301) and the rear buffer transfer chamber (302); The vacuum transition chamber (4) comprises a front transition chamber (401), a rear transition transfer chamber (402) and a third transfer guide groove (403); the right walls of the front gas buffer chamber (301) and the rear buffer transfer chamber (302) are fixedly connected to the front transition chamber (401) and the rear transition transfer chamber (402); the right parts of the front transition chamber (401) and the rear transition transfer chamber (402) are fixedly arranged on the frame (1); and the third transfer guide groove (403) is formed on the connecting wall of the front transition chamber (401) and the rear transition transfer chamber (402); The silicon wafer circulating transmission mechanism (6) comprises a positioning substrate (601), a loading platform (602), an auxiliary conveyor belt (603), a driving sprocket (604), a driven chain (605), a directional slider (606), a silicon wafer carrier (607), a latch (608) and a material unloading guide carrier (609). A positioning substrate (601) is fixed between the lower right wall of the front cleaning chamber (201) and the lower left wall of the front transition chamber (401). A loading platform (602) is fixed on the upper part of the positioning substrate (601). An auxiliary conveyor belt (603) is installed in the loading platform (602) for transmission. A driving sprocket (604) is rotatably installed at the lower left corner of the rear cleaning transmission chamber (202), the upper left corner of the rear buffer transmission chamber (302), and the upper right corner and lower part of the rear transition transmission chamber (402). The four driving sprockets (604) are connected by a chain transmission sleeve. A driven chain (605) is provided with fifteen directional sliders (606) equidistantly mounted on the driven chain (605) via fifteen latches (608). The fifteen directional sliders (606) are all slidably mounted in the first conveying guide groove (203), the second conveying guide groove (303) and the third conveying guide groove (403). A silicon wafer carrier (607) is mounted on the front wall of the fifteen directional sliders (606). When the silicon wafers are transferred from the upper part of the auxiliary conveyor belt (603) in the tool (607), they are loaded with silicon wafers by the robot. A material unloading guide carrier (609) is fixed between the inner side of the front wall of the front transition chamber (401) and the inner side of the front wall of the loading end of the sealed copper-plated wire (5), and the movement path of the fifteen silicon wafer carriers (607) intersects with the left end of the material unloading guide carrier (609). The material unloading guide carrier (609) intermittently crosses the silicon wafer carrier (607) but does not contact it.

2. The transfer device for silicon wafer copper plating pretreatment according to claim 1, characterized in that: The pre-cleaning chamber (2) comprises a first sealing installation groove (204), a liquid leakage-proof self-opening and closing component (205) and a nitrogen curtain (206); the first sealing installation groove (204) is provided at the lower portion of the right wall of the front cleaning chamber (201) and the rear cleaning transfer chamber (202); the liquid leakage-proof self-opening and closing component (205) is installed in the first sealing installation groove (204); and the nitrogen curtain (206) is provided at the upper outlet of the front cleaning chamber (201).

3. The transfer device for silicon wafer copper plating pretreatment according to claim 1, characterized in that: The inert gas buffer chamber (3) comprises a vacuum air curtain (304) and a plasma activator mounting hole (305); the vacuum air curtain (304) is mounted at the right wall outlet of the front gas buffer chamber (301); the plasma activator mounting hole (305) is opened at the upper left corner of the rear wall of the rear buffer transfer chamber (302), and a plasma activator is mounted in the plasma activator mounting hole (305).

4. The transfer device for silicon wafer copper plating pretreatment according to claim 2, characterized in that: The vacuum transition chamber (4) comprises a second sealing installation groove (404), an anti-leakage self-opening and closing component (405) and a molecular pump installation hole (406); the second sealing installation groove (404) is provided on the lower left wall of the front transition chamber (401) and the rear transition transmission chamber (402); the anti-leakage self-opening and closing component (405) is installed in the second sealing installation groove (404); the molecular pump installation hole (406) is provided at the upper right corner of the rear wall of the rear transition transmission chamber (402), and the molecular pump is installed in the molecular pump installation hole (406).

5. The transfer device for silicon wafer copper plating pretreatment according to claim 4, characterized in that: The liquid leakage prevention self-opening and closing assembly (205) and the gas leakage prevention self-opening and closing assembly (405) both comprise a return spring (2051), a pressure plate (2052) and an elastic sealing block (2053), the upper wall and the lower wall of the first sealing installation groove (204) and the second sealing installation groove (404) are both equidistantly installed with a plurality of pairs of return springs (2051), a pressure plate (2052) is fixed between the outer ends of the plurality of return springs (2051) on the same surface, and the four pressure plates (2052) are respectively slidably installed in a group of two. In the first sealing installation groove (204) and the second sealing installation groove (404), elastic sealing blocks (2053) are fixed to the outer side surfaces of the four pressure plates (2052), and the two elastic sealing blocks (2053) on the same vertical line are intermittently closed. The elastic sealing blocks (2053) are in the shape of an inverted right-angled trapezoid when viewed from the front. When the two elastic sealing blocks (2053) are closed, they are sealed with the front cleaning chamber (201) and the front transition chamber (401), and the two elastic sealing blocks (2053) form a rightward triangular opening when closed.

6. The transfer device for silicon wafer copper plating pretreatment according to claim 1, characterized in that: The first conveying guide groove (203), the second conveying guide groove (303) and the third conveying guide groove (403) are connected, and the first conveying guide groove (203), the second conveying guide groove (303) and the third conveying guide groove (403) form a rectangular parallelepiped frame groove, and the four inner corners of the rectangular parallelepiped frame groove are all chamfered.

7. The transfer device for silicon wafer copper plating pretreatment according to claim 1, characterized in that: The silicon wafer carrier (607) includes a front-opening carrier frame (6071), an extrusion guide bar (6072) and an equidistant transport carrier bar (6073). The rear wall of the front-opening carrier frame (6071) is fixedly connected to the front wall of the directional slider (606), and the front-opening carrier frame (6071) is a three-sided frame with an opening at the front. The left end of the front-opening carrier frame (6071) is provided with an extrusion guide bar (6072), and the extrusion guide bar (6072) is triangular when viewed from the front, and the left two sides of the triangle are parallel to the triangular opening sides of the elastic sealing block (2053). Eight equidistant transport carrier bars (6073) are fixed in the front-opening carrier frame (6071), and the silicon wafers are intermittently placed on the eight equidistant transport carrier bars (6073) in the front-opening carrier frame (6071).

8. The transfer device for silicon wafer copper plating pretreatment according to claim 7, characterized in that: The blanking guide carrier (609) includes a rear opening carrier frame (6091) and equidistant blanking carrier strips (6092), the front wall of the rear opening carrier frame (6091) is fixedly connected to the front transition chamber (401) and the inner side of the front wall of the sealing copper-plated wire (5) feeding end, and the rear opening carrier frame (6091) is a three-sided frame with a rear opening. Fifty equidistant conveying carrier strips (6073) are fixed in the blanking guide carrier (609), and the equidistant conveying carrier strips (6073) of the blanking guide carrier (609) are arranged in a cross-arrangement when intersecting with the equidistant conveying carrier strips (6073) of the front opening carrier frame (6071).

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