Rapid annealing device for semiconductor wafer

Abstract

The invention discloses a semiconductor wafer rapid annealing device which comprises a first annealing mechanism and a second annealing mechanism, movable sealing mechanisms are arranged below the first annealing mechanism and the second annealing mechanism, and auxiliary mechanisms are arranged in the first annealing mechanism and the second annealing mechanism. A first processing assembly matched with the auxiliary mechanism is arranged on one side of the first annealing mechanism, a second processing assembly matched with the auxiliary mechanism is arranged on one side of the second annealing mechanism, and the output end of the auxiliary mechanism in the first annealing mechanism is connected with the second processing assembly. According to the semiconductor wafer rapid annealing device provided by the invention, through modular integrated design, four links of preheating, annealing, cooling and protective gas supply are integrated into a linkage process, so that the operation steps are simplified, the number of independent equipment is reduced, and the problems of redundancy and complex maintenance of traditional process equipment are solved.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor wafer processing, and specifically relates to a semiconductor wafer rapid annealing device. Background Art

[0002] As the core substrate for integrated circuit manufacturing, the preparation process of semiconductor wafers starts with high-purity monocrystalline silicon. By melting high-purity polysilicon raw materials and introducing them into silicon crystal seeds, a cylindrical single-crystalline silicon ingot is slowly pulled by the Czochralski method, and then through multiple precision processing steps, wafers that meet the device manufacturing requirements are finally obtained. Since lattice damage is inevitably introduced during the wafer processing, annealing processes must be used to eliminate dislocation defects and achieve a periodic and orderly arrangement of the crystal structure.

[0003] The existing annealing process system generally adopts a three-stage thermal cycle process: first, preheating is achieved through resistance heating or induction heating, then high-temperature annealing treatment is carried out using a halogen lamp array or an infrared radiation source. Some processes will combine pulsed lasers and optical focusing systems to achieve precise heat treatment of micron-level areas on the wafer surface. Finally, rapid cooling is completed through forced water cooling or circulating refrigerant. Through thermal budget control, this process can effectively repair ion implantation damage and activate dopants.

[0004] However, there are certain defects in actual use: ① Since the preheating and cooling processes require independent temperature control devices, it leads to equipment redundancy and increased energy consumption; ② When using a water cooling system, the coolant and filter components need to be periodically replaced to maintain the heat exchange efficiency, increasing the maintenance complexity; ③ To suppress impurity diffusion and oxidation reactions during high-temperature annealing, an inert gas needs to be continuously introduced, further increasing the process cost; The above-mentioned process links are relatively independent, inconvenient for unified control, and at the same time lead to equipment redundancy and increased energy consumption, thus restricting the economy and process integration of the annealing process. Summary of the Invention

[0005] Aiming at the deficiencies of the prior art, the purpose of the present invention is to provide a semiconductor wafer rapid annealing device.

[0006] To achieve the aforementioned invention objectives, the technical solutions adopted by the present invention include: a first annealing mechanism and a second annealing mechanism, with a moving sealing mechanism provided under each of the first annealing mechanism and the second annealing mechanism, an auxiliary mechanism provided inside each of the first annealing mechanism and the second annealing mechanism, a first processing component matching the auxiliary mechanism provided on one side of the first annealing mechanism, a second processing component matching the auxiliary mechanism provided on one side of the second annealing mechanism, the first processing component, the first annealing mechanism, the second processing component, and the second annealing mechanism are arranged in sequence, and the output end of the auxiliary mechanism inside the first annealing mechanism is connected to the second processing component.

[0007] Optionally, the first annealing mechanism includes a first annealing chamber and a first cooling chamber, which are arranged in sequence along the traveling direction of the moving sealing mechanism. The second annealing mechanism includes a second annealing chamber and a second cooling chamber, and the structure of the second annealing mechanism is the same as that of the first annealing mechanism.

[0008] Optionally, the moving sealing mechanism includes linear guide devices respectively arranged under the first annealing mechanism and the second annealing mechanism. A guide rail slider is slidably fitted on the linear guide device, and a moving plate is provided on the guide rail slider. The moving plate is provided with a wafer placement rack matching the wafer.

[0009] Optionally, sealing plates are symmetrically arranged at both ends of the moving plate. A sealing gasket is provided on the outer peripheral side of the sealing plate. Empty slots matching the sealing plates are opened at both ends of the first annealing chamber, the first cooling chamber, the second annealing chamber, and the second cooling chamber.

[0010] In the present invention, the provided moving sealing mechanism can facilitate the placement and transportation of the wafer, thereby facilitating subsequent annealing processing, and at the same time, continuous processing can be realized, improving the processing efficiency.

[0011] Optionally, the first processing component includes a first gas storage tank arranged on one side of the first annealing mechanism. The side wall of the first gas storage tank is connected to the input end of the first compressor through a ventilation pipe. The output end of the first compressor is connected to the auxiliary mechanism. The second processing component includes a second gas storage tank arranged on one side of the second annealing mechanism. The side wall of the second gas storage tank is also connected to the input end of the second compressor through a ventilation pipe.

[0012] Optionally, the auxiliary mechanism includes a compressed gas discharge pipe connected to the output end of the first compressor. A vortex tube is provided at the end of the compressed gas discharge pipe. Pretreatment components are provided at both the cold end and the hot end of the vortex tube. The auxiliary mechanism inside the second annealing mechanism has the same structure as the auxiliary mechanism inside the first annealing mechanism.

[0013] Optionally, the pretreatment component includes a surrounding tube arranged inside the first annealing chamber and the first cooling chamber. The surrounding tube inside the first annealing chamber is connected to the hot end of the vortex tube through a pretreatment inlet pipe. The surrounding tube inside the first cooling chamber is connected to the cold end of the vortex tube through a pretreatment inlet pipe.

[0014] In the present invention, compressed nitrogen can be introduced, and then in cooperation with a vortex tube, hot nitrogen can be used for preheating the annealing chamber, cold nitrogen can be used for cooling the cooling chamber, and nitrogen can also be introduced to exclude air to provide protection during the processing. It has high integration and does not require frequent maintenance or replacement of the surrounding tube, which is relatively convenient.

[0015] Optionally, one end of the surrounding tube in the first annealing mechanism away from the pretreatment inlet tube is connected to the second gas storage tank through a pretreatment outlet tube.

[0016] In the invention, nitrogen can be conveniently recycled and reused, saving the consumption of nitrogen and reducing the processing cost.

[0017] Optionally, the pretreatment assembly further includes connecting tubes symmetrically arranged inside the first annealing chamber and the first cooling chamber. Spray heads are equidistantly arranged on the connecting tubes. The connecting tube in the first annealing chamber is connected to the hot end of the vortex tube through a protective gas inlet tube, and the connecting tube in the first cooling chamber is connected to the cold end of the vortex tube through a protective gas inlet tube.

[0018] Optionally, an annular groove is formed in the vertical section inside the protective gas inlet tube. A sealing plate is slidably arranged below the annular groove in the protective gas inlet tube. A sealing ring is arranged outside the sealing plate. A sliding rod is arranged in the middle of the top end of the sealing plate. A spring is sleeved outside the sliding rod. The sliding rod slidably passes through a circular plate and is fixedly provided with a limiting plate. The circular plate is fixedly arranged above the annular groove in the protective gas inlet tube, and through holes are equidistantly formed on the circumferential side of the circular plate. The through holes are communicated with the annular groove.

[0019] In the present invention, after introducing nitrogen to exclude air, the protective gas inlet tube through which nitrogen is introduced can be blocked to suspend the introduction of nitrogen, and then it can be automatically opened, which does not affect the gas supply protection during the next processing and can reduce the use of nitrogen.

[0020] Compared with the prior art, the advantages of the present invention include: (1) A semiconductor wafer rapid annealing device provided by the present invention integrates the four major links of preheating, annealing, cooling, and protective gas supply into a linkage process through modular integrated design, which not only simplifies the operation steps but also reduces the number of independent devices, solving the problems of redundant traditional process equipment and complex maintenance. (2) A semiconductor wafer rapid annealing device provided by the present invention uses a vortex tube to intelligently separate compressed nitrogen into hot and cold dual airflows, preheating the annealing chamber with hot nitrogen and assisting in cooling with cold nitrogen, replacing the traditional independent temperature control device, significantly reducing energy consumption, and avoiding operations such as regularly replacing coolant or filters required by traditional water cooling, etc. (3) The semiconductor wafer rapid annealing device provided by the present invention simultaneously adopts a closed-loop nitrogen circulation system, recovers nitrogen through pipelines and reinjects it into the gas storage tank, effectively reducing gas waste and the trouble of frequently replacing the coolant; (4) The semiconductor wafer rapid annealing device provided by the present invention has an adaptive plugging design for the protective gas pipeline, automatically cuts off the nitrogen supply during sealed processing, not only maintaining the purity of the processing environment but also avoiding the consumption of ineffective gas. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings described below are only some embodiments recorded in the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0022] Figure 1 One of the overall schematic diagrams of a semiconductor wafer rapid annealing device in the present invention; Figure 2 Another overall schematic diagram of a semiconductor wafer rapid annealing device in the present invention; Figure 3 Schematic diagram of the first processing component and the auxiliary mechanism in a semiconductor wafer rapid annealing device in the present invention; Figure 4 Partial structural schematic diagram of the auxiliary mechanism in a semiconductor wafer rapid annealing device in the present invention; Figure 5 Partial structural schematic diagram of the protective gas inlet pipe and the connecting pipe in a semiconductor wafer rapid annealing device in the present invention; Figure 6 For Figure 5 The enlarged structural schematic diagram at A in Figure 7 Structural schematic diagram of the movable sealing mechanism in a semiconductor wafer rapid annealing device in the present invention.

[0023] Reference Signs: 11. First annealing chamber; 12. First cooling chamber; 21. Second annealing chamber; 22. Second cooling chamber; 31. Linear guide device; 32. Guide rail slider; 33. Sealing gasket; 34. Wafer placement rack; 35. Moving plate; 36. Sealing plate; 41. First compressor; 42. First gas storage tank; 51. Vent pipe; 52. Compressed gas discharge pipe; 53. Vortex tube; 54. Pretreatment outlet pipe; 55. Pretreatment inlet pipe; 56. Surrounding pipe; 57. Protection gas inlet pipe; 58. Connecting pipe; 59. Sprayer; 61. Plugging plate; 62. Sealing ring; 63. Annular groove; 64. Slide bar; 65. Spring; 66. Circular plate; 67. Limiting plate; 68. Through hole; 71. Adding pipe; 81. Second gas storage tank; 82. Second compressor. Detailed implementation manner

[0024] In view of the deficiencies in the prior art, the inventors of this case have proposed the technical solution of the present invention through long-term research and a large number of practices. The following will further explain and illustrate the technical solution, its implementation process and principle, etc. in combination with the drawings in the embodiments of the present application and specific implementation cases.

[0025] It should be noted that the embodiments described below by referring to the drawings are exemplary and are only used to explain the present invention, and cannot be understood as a limitation to the present invention. The described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, the present invention covers any alternatives, modifications, equivalent methods and solutions made within the spirit, principle and scope of the present invention defined by the claims. All other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention.

[0026] In the description of the present application, words such as "first", "second", "third" and the like do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one" or "a" do not indicate a quantity limitation, but indicate the existence of at least one. Words such as "including" or "comprising" mean that the elements or objects appearing before "including" or "comprising" cover the elements or objects listed after "including" or "comprising" and their equivalents, and do not exclude other elements or objects. Words such as "connected" or "linked" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect.

[0027] In the description of the present application, the orientation or positional relationship indicated by terms such as "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present application. In addition, when using position terms such as both sides, outer side, upper and lower, etc., it should be understood that they are only used for easy understanding and description, considering that the structure may face other positions.

[0028] In the description of the present application, unless otherwise clearly specified and limited, the technical terms or scientific terms used should have the ordinary meaning understood by those with ordinary skills in the field to which the present application belongs. Terms such as "installation", "connection", "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or a contact connection or an integral connection; for those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0029] The embodiments of the present invention are intended to introduce and illustrate the structural composition of the semiconductor wafer rapid annealing device and the cooperation relationship between the various component structures. Unless otherwise specified, the dimensions, materials, manufacturing processes, etc. of the various components suitable for the semiconductor wafer rapid annealing device in the embodiments of the present invention can be selected according to specific circumstances, and no special limitations and descriptions are made here.

[0030] Furthermore, in order to enable the public to have a better understanding of the present invention, in the following detailed description of the present invention, some specific detailed parts are described in detail. Those skilled in the art can fully understand the present invention without the description of these detailed parts.

[0031] Embodiment 1 Please refer to Figures 1-4 and Figure 7, A semiconductor wafer rapid annealing device, including a first annealing mechanism and a second annealing mechanism. When the number is two groups, two sets of annealing processing lines are set to improve the processing efficiency. A third annealing mechanism or a fourth annealing mechanism can also be set according to the actual processing usage. Mobile sealing mechanisms are provided under both the first annealing mechanism and the second annealing mechanism, which can facilitate the placement and movement of the wafer, and facilitate the cooperation with the first annealing mechanism and the second annealing mechanism to complete the annealing process. Auxiliary mechanisms are provided inside both the first annealing mechanism and the second annealing mechanism, which can facilitate the preheating and cooling operations inside the corresponding annealing chamber and cooling chamber. At the same time, nitrogen can be introduced into the inside for protection to inhibit the redistribution of impurities or oxidation reaction during high-temperature annealing. A first processing component matching the auxiliary mechanism is provided on one side of the first annealing mechanism, and a second processing component matching the auxiliary mechanism is provided on one side of the second annealing mechanism, which can facilitate the compression of nitrogen, and then be processed through the vortex tube 53 to separate hot nitrogen and cold nitrogen, which are respectively suitable for the preheating of the annealing chamber and the cooling of the cooling chamber. The first processing component, the first annealing mechanism, the second processing component, and the second annealing mechanism are arranged in sequence. The output end of the auxiliary mechanism in the first annealing mechanism is connected to the second processing component, which can facilitate the recovery of the nitrogen in the surrounding tube 56 in the first annealing mechanism to the next processing component. For example, the nitrogen in the first annealing mechanism is recovered into the second processing component, and the nitrogen in the second annealing mechanism is recovered into the third processing component, and so on, so as to recover nitrogen. The nitrogen in the last annealing mechanism (the second annealing mechanism in this example) is recovered into the first gas storage tank 42 in the first processing component (connected through the adding tube 71), realizing the recycling of nitrogen.

[0032] In this embodiment, please refer to Figures 1-4 and Figure 7, the first annealing mechanism includes a first annealing chamber 11 and a first cooling chamber 12. The first annealing chamber 11 and the first cooling chamber 12 are arranged in sequence along the traveling direction of the moving sealing mechanism. The second annealing mechanism includes a second annealing chamber 21 and a second cooling chamber 22. The structure of the second annealing mechanism is the same as that of the first annealing mechanism. For the first annealing chamber 11 and the second annealing chamber 21, halogen infrared lamps, lasers or resistance heating are mainly installed inside to heat the wafer to 300°C - 1250°C within several seconds to several minutes (selected according to actual conditions). A high-energy laser beam (such as pulsed laser) can also be installed as needed to locally heat the surface of the wafer to achieve precise annealing in a micron-level area, avoiding thermal damage to the underlying material. This is a relatively mature technology and will not be elaborated here. In order to facilitate preheating, cooling, and ventilation protection, a first processing component and a second processing component are respectively provided on one side of the first annealing mechanism and the second annealing mechanism. The first processing component includes a first gas storage tank 42 (for storing nitrogen) provided on one side of the first annealing mechanism. The side wall of the first gas storage tank 42 is connected to the input end of the first compressor 41 through an air pipe 51. The output end of the first compressor 41 is connected to the auxiliary mechanism. The second processing component includes a second gas storage tank 81 (for storing nitrogen) provided on one side of the second annealing mechanism. The side wall of the second gas storage tank 81 is also connected to the input end of the second compressor 82 through an air pipe 51. For the first compressor 41 and the second compressor 82, they can be piston-type, screw-type or centrifugal compressors, and are selected according to actual conditions. The first processing component, the second processing component, and the corresponding connected auxiliary mechanism have the same structure. The auxiliary mechanism includes a compressed gas discharge pipe 52 connected to the output end of the first compressor 41. The end of the compressed gas discharge pipe 52 is provided with a vortex tube 53. For the vortex tube 53, it mainly consists of a vortex chamber, a separation orifice plate, a cold end tube, a hot end tube, a regulating valve, etc. This is a relatively mature technology and will not be elaborated here. Pretreatment components are provided at both the cold end and the hot end of the vortex tube 53. The auxiliary mechanism in the second annealing mechanism has the same structure as the auxiliary mechanism in the first annealing mechanism. The pretreatment component includes a surrounding tube 56 provided inside the first annealing chamber 11 and the first cooling chamber 12 (fittingly distributed along the inner walls of the first annealing chamber 11 and the first cooling chamber 12, and the distribution structure inside the corresponding second annealing chamber 21 and the second cooling chamber 22 is the same). The surrounding tube 56 in the first annealing chamber 11 is connected to the hot end of the vortex tube 53 through a pretreatment inlet pipe 55. The surrounding tube 56 in the first cooling chamber 12 is connected to the cold end of the vortex tube 53 through a pretreatment inlet pipe 55. One end of the surrounding tube 56 in the first annealing mechanism away from the pretreatment inlet pipe 55 is connected to the second gas storage tank 81 through a pretreatment outlet pipe 54, which can facilitate the recycling of the used nitrogen and is convenient for supplying gas to the second processing component. The nitrogen discharged from the surrounding tube 56 in the second annealing mechanism can be connected to the first gas storage tank 42 through an adding pipe 71,The preprocessing component further includes connecting pipes 58 symmetrically arranged inside the first annealing chamber 11 and the first cooling chamber 12. Nozzles 59 are equidistantly arranged on the connecting pipes 58. The connecting pipe 58 in the first annealing chamber 11 is connected to the hot end of the vortex tube 53 through a protective gas inlet pipe 57, and the connecting pipe 58 in the first cooling chamber 12 is connected to the cold end of the vortex tube 53 through a protective gas inlet pipe 57.,

[0033] In this embodiment, please refer to Figures 1-4 and Figure 7 , in order to conveniently move the wafers to be processed and facilitate annealing processing, which is relatively convenient and can be continuously processed, mobile sealing mechanisms are provided under both the first annealing mechanism and the second annealing mechanism. The mobile sealing mechanism includes linear guide devices 31 (partially shown in the figure) respectively arranged under the first annealing mechanism and the second annealing mechanism. Guide rail sliders 32 are slidably fitted on the linear guide devices 31 (a total of three groups can be provided, corresponding to and connected to the moving plate 35, or four, five or other numbers can also be provided). A moving plate 35 is provided on the guide rail slider 32 (matched with the guide rail slider 32). For the linear guide device 31, it can also be replaced by a conveying device such as a conveyor belt, which can conveniently realize the movement of the moving plate 35. The moving plate 35 is matched with a wafer placement rack 34 for the wafers (which can also be a pallet or a fixture, etc., which is convenient for placing and fixing the wafers to be annealed and does not affect the subsequent annealing processing. It is a relatively mature technology and will not be elaborated here). Sealing plates 36 are symmetrically arranged at both ends of the moving plate 35. Sealing gaskets 33 are arranged on the outer peripheral side of the sealing plates 36. For the sealing gaskets 33, they can be made of high-temperature resistant materials (such as made of metal or ceramic fiber, etc.). After the wafers to be processed enter the working station, the corresponding empty slots can be blocked by the sealing plates 36 in cooperation with the sealing gaskets 33, which is convenient for subsequent processing operations. Empty slots matched with the sealing plates 36 are opened at both ends of the first annealing chamber 11, the first cooling chamber 12, the second annealing chamber 21 and the second cooling chamber 22. After the wafers to be processed are moved to the corresponding working stations, the corresponding annealing chambers or cooling chambers can be blocked, which is convenient for annealing and cooling processing.

[0034] Working principle: Nitrogen in the first gas storage tank 42 is introduced into the first compressor 41 through the ventilation pipe 51. Through the operation of the first compressor 41, the nitrogen is compressed and then introduced into the vortex tube 53 through the compressed gas discharge pipe 52. Under the action of the vortex tube 53, hot nitrogen is discharged through the hot end, and cold nitrogen is discharged through the cold end. It is combined with the pretreatment inlet pipe 55 and enters the inside of the surrounding pipe 56, so as to preheat the inside of the first annealing chamber 11 and cool down the inside of the first cooling chamber 12. At the same time, the nitrogen at the cold end and the nitrogen at the hot end respectively enter the corresponding protective gas inlet pipes 57, and then are sprayed out through the nozzles 59 under the connecting pipe 58, so that the air in the first annealing chamber 11 and the first cooling chamber 12 can be discharged and filled with nitrogen. At the same time, the wafer to be processed is placed on the wafer placement rack 34. Through the operation of the linear guide device 31, the moving plate 35 on the guide rail slider 32 is moved. Then the moving plate 35 is moved into the first annealing chamber 11. At this time, the sealing plate 36 cooperates with the sealing gasket 33 to block the empty slot. Then the heating device (halogen infrared lamp, laser or resistance heating) inside the first annealing chamber 11 works to process the wafer, and then continues to move into the cooling chamber for cooling. At this time, the wafer on the next moving plate 35 just enters the first annealing chamber 11 for processing operations. The nitrogen discharged from the surrounding pipe 56 is discharged into the second gas storage tank 81 through the pretreatment outlet pipe 54 for recycling. The annealing process of the second annealing chamber 21, the second cooling chamber 22 and other wafers is the same as the above steps.

[0035] Embodiment 2 Please refer to Figures 1-6 , in order to facilitate ventilation in the annealing chamber and the cooling chamber, discharge the internal air, and then fill the annealing chamber and the cooling chamber with nitrogen. When inflating, the protective gas inlet pipe 57 is opened, and after filling, the protective gas inlet pipe 57 is blocked to achieve adaptive adjustment. An annular groove 63 is provided in the vertical section inside the protective gas inlet pipe 57. A blocking plate 61 (which can block the protective gas inlet pipe 57 when not ventilating) is slidably provided under the annular groove 63 in the protective gas inlet pipe 57. A sealing ring 62 is provided outside the blocking plate 61 to ensure the sealing effect. A sliding rod 64 is provided in the middle of the top end of the blocking plate 61. A spring 65 is sleeved outside the sliding rod 64. The sliding rod 64 slides out of the circular plate 66 and is fixedly provided with a limiting plate 67. The circular plate 66 is fixedly arranged above the annular groove 63 in the protective gas inlet pipe 57, and through holes 68 are equidistantly provided on the circumferential side of the circular plate 66. The through holes 68 are communicated with the annular groove 63, which can facilitate the annular groove 63 in the protective gas inlet pipe 57 to be in a communicating state with the through holes 68 when the blocking plate 61 slides to the annular groove 63, and thus does not affect the ventilation operation.

[0036] Working principle: When venting air, gas is introduced into the protective gas inlet pipe 57. At this time, an upward thrust is generated on the plugging plate 61. As the gas enters, the internal pressure gradually increases. Then, the plugging plate 61 moves upward, and the sliding rod 64 slides on the circular plate 66. The spring 65 is compressed to store potential energy. The plugging plate 61 moves into the annular groove 63. At this time, the protective gas inlet pipe 57 is in a connected state. Then, the gas is ejected through the nozzle 59 under the connecting pipe 58 to expel air. When the sealing plate 36 cooperates with the sealing gasket 33 to plug the annealing chamber (the first annealing chamber 11 or the second annealing chamber 21) and the cooling chamber (the first cooling chamber 12 or the second cooling chamber 22), the inside is in a sealed state. As nitrogen is continuously introduced after the air is exhausted, the internal pressure gradually increases, thereby generating a reset thrust on the plugging plate 61, and then cooperating with the spring 65 to store potential energy for resetting, leaving the annular groove 63 to suspend the introduction of nitrogen, which can save the consumption of nitrogen. When the moving plate 35 leaves the annealing chamber (the first annealing chamber 11 or the second annealing chamber 21) and the cooling chamber (the first cooling chamber 12 or the second cooling chamber 22), the inside loses its seal. Repeat the above steps, and the plugging plate 61 moves back to the annular groove 63 and is in a connected state, and nitrogen can be introduced into the inside, without affecting the protection during subsequent processing.

[0037] It should be understood that the above embodiments are only used to illustrate the technical concept and characteristics of the present invention. The purpose is to enable those familiar with this technology to understand the content of the present invention and implement it accordingly. It cannot be determined that the specific implementation of the present invention is only limited to these descriptions. For those of ordinary skill in the technical field to which the present invention belongs, without departing from the concept of the present invention, several simple deductions or replacements can still be made. All equivalent changes or modifications made according to the spirit and essence of the present invention should be covered within the protection scope of the present invention.

Claims

1. A semiconductor wafer rapid annealing device, comprising a first annealing mechanism and a second annealing mechanism, characterized in that: A moving sealing mechanism is provided under both the first annealing mechanism and the second annealing mechanism. An auxiliary mechanism is provided inside both the first annealing mechanism and the second annealing mechanism. A first processing component matching the auxiliary mechanism is provided on one side of the first annealing mechanism. A second processing component matching the auxiliary mechanism is provided on one side of the second annealing mechanism. The first processing component, the first annealing mechanism, the second processing component, and the second annealing mechanism are arranged in sequence. The output end of the auxiliary mechanism in the first annealing mechanism is connected to the second processing component.

2. The rapid annealing device for semiconductor wafers according to claim 1, wherein: The first annealing mechanism includes a first annealing chamber (11) and a first cooling chamber (12). The first annealing chamber (11) and the first cooling chamber (12) are arranged in sequence along the traveling direction of the moving sealing mechanism. The second annealing mechanism includes a second annealing chamber (21) and a second cooling chamber (22). The structure of the second annealing mechanism is the same as that of the first annealing mechanism.

3. A rapid annealing device for a semiconductor wafer according to claim 1, characterized in that: The moving sealing mechanism includes linear guide devices (31) respectively arranged under the first annealing mechanism and the second annealing mechanism. A guide rail slider (32) is slidably fitted on the linear guide device (31). A moving plate (35) is provided on the guide rail slider (32). A wafer placement rack (34) matching the wafer is provided on the moving plate (35).

4. A rapid annealing device for semiconductor wafers according to claim 3, characterized in that: Sealing plates (36) are symmetrically provided at both ends of the moving plate (35). Sealing gaskets (33) are provided on the outer peripheral side of the sealing plates (36). Empty slots matching the sealing plates (36) are provided at both ends of the first annealing chamber (11), the first cooling chamber (12), the second annealing chamber (21), and the second cooling chamber (22).

5. A rapid annealing device for semiconductor wafers according to claim 2, characterized in that: The first processing component includes a first gas storage tank (42) provided on one side of the first annealing mechanism. The side wall of the first gas storage tank (42) is connected to the input end of a first compressor (41) through an air pipe (51). The output end of the first compressor (41) is connected to the auxiliary mechanism. The second processing component includes a second gas storage tank (81) provided on one side of the second annealing mechanism. The side wall of the second gas storage tank (81) is also connected to the input end of a second compressor (82) through an air pipe (51).

6. A rapid annealing device for semiconductor wafers according to claim 5, characterized in that: The auxiliary mechanism includes a compressed gas discharge pipe (52) connected to the output end of the first compressor (41). A vortex tube (53) is provided at the end of the compressed gas discharge pipe (52). Pretreatment components are provided at both the cold end and the hot end of the vortex tube (53). The auxiliary mechanism in the second annealing mechanism has the same structure as the auxiliary mechanism in the first annealing mechanism.

7. A rapid annealing device for semiconductor wafers according to claim 6, characterized in that: The pretreatment component includes a surrounding tube (56) provided inside the first annealing chamber (11) and the first cooling chamber (12). The surrounding tube (56) in the first annealing chamber (11) is connected to the hot end of the vortex tube (53) through a pretreatment inlet pipe (55). The surrounding tube (56) in the first cooling chamber (12) is connected to the cold end of the vortex tube (53) through a pretreatment inlet pipe (55).

8. A rapid annealing device for semiconductor wafers according to claim 7, characterized in that: One end of the surrounding pipe (56) in the first annealing mechanism, which is far away from the pre-treatment inlet pipe (55), is connected to the second gas storage tank (81) through the pre-treatment outlet pipe (54).

9. A rapid annealing device for semiconductor wafers according to claim 8, characterized in that: The pre-treatment assembly further includes connecting pipes (58) symmetrically arranged inside the first annealing chamber (11) and the first cooling chamber (12). Spray nozzles (59) are equidistantly arranged on the connecting pipes (58). The connecting pipe (58) in the first annealing chamber (11) is connected to the hot end of the vortex tube (53) through the protective gas inlet pipe (57), and the connecting pipe (58) in the first cooling chamber (12) is connected to the cold end of the vortex tube (53) through the protective gas inlet pipe (57).

10. A rapid annealing device for a semiconductor wafer according to claim 9, characterized in that: An annular groove (63) is formed in the vertical section inside the protective gas inlet pipe (57). A plugging plate (61) is slidably arranged below the annular groove (63) in the protective gas inlet pipe (57). A sealing ring (62) is arranged outside the plugging plate (61). A sliding rod (64) is arranged in the middle of the top end of the plugging plate (61). A spring (65) is sleeved outside the sliding rod (64). The sliding rod (64) slides out of the round plate (66) and is fixedly provided with a limiting plate (67). The round plate (66) is fixedly arranged above the annular groove (63) in the protective gas inlet pipe (57), and through holes (68) are equidistantly formed in the circumferential side of the round plate (66). The through holes (68) are communicated with the annular groove (63).

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