Event sensor with self-adaptive light response regulation and control capability, preparation method and application

Abstract

The invention belongs to the technical field of photoelectric sensors, and discloses an event sensor with self-adaptive light response regulation and control capability, a preparation method and application. The sensor comprises a substrate, a bottom electrode, an electron transport layer, an acceptor layer, an ionic gel layer, a donor layer, an electrode modification layer and a top electrode which are sequentially connected from bottom to top. The event sensor provided by the invention detects the change of light intensity, generates voltage or current pulse, and can realize the functions of light intensity adaptation, signal filtering and the like. When the background light changes, the light response of the sensor is approximately in direct proportion to the difference between the light signal and the background light. When the intensity of an optical signal changes along with time according to a sinusoidal waveform, the sensor has the highest sensitivity to a signal with the frequency within the range of 100Hz-1000Hz. The self-adaptive event sensor provided by the invention simulates the signal sensing and processing functions of the retina of human eyes, and can be applied to a novel camera and a machine vision system.

Description

Technical Field

[0003] The present invention belongs to the technical field of optoelectronic sensors, and particularly relates to an event sensor with an adaptive light response regulation ability, a preparation method and an application thereof. Background Art

[0004] Machine vision technology enables machines to have the ability to perceive the environment and make responses, which is very important in automation technology. With the development of intelligent robots and autonomous driving technologies, the annual production of optical sensors has reached 8.1 billion, and both the temporal and spatial resolutions are continuously increasing. However, traditional frame-based optical sensors collect a large amount of redundant data, and transmitting and processing this data requires a large amount of time and energy, which limits the response speed and battery life of robots. Different from traditional cameras, event-based sensors mimic the light detection mechanism of the human eye, only detect changes in light signals, can eliminate redundant data between frames, and have a larger light intensity response range and higher temporal resolution. However, the data output from event sensors can still reach 25 million events per second, and these event data need to be transmitted to a central processor for calculation, resulting in significant energy consumption and latency. An event sensor with an adaptive sensitivity regulation ability can perform data preprocessing, thus effectively improving this problem. The functions of signal filtering, extraction and enhancement achieved through adaptive sensitivity can reduce data transmission and accelerate subsequent computational tasks. So far, the function of performing data processing inside the sensor has not been realized in event-based sensors. Implementing an event sensor with an adaptive sensitivity regulation ability is of great significance for improving the response speed and energy efficiency of machine vision systems, and can promote the development of fields such as the Internet of Things, drones, and autonomous driving. Summary of the Invention

[0005] The purpose of the present invention is to overcome the deficiencies in the prior art and provide an event sensor with an adaptive light response regulation ability, a preparation method and an application thereof.

[0006] The technical solution adopted by the present invention to solve its technical problems is:

[0007] An event sensor with an adaptive light response regulation ability, the sensor includes a substrate, a bottom electrode, an electron transport layer, a receptor layer, an ion gel layer, a donor layer, an electrode modification layer and a top electrode which are sequentially connected from bottom to top.

[0008] Further, a transparent bottom electrode formed on the substrate, an electron transport layer formed on the bottom electrode, a receptor formed on the electron transport layer, an ion gel layer formed on the receptor, a donor doped with a P-type dopant formed on the ion gel layer, an electrode modification layer formed on the donor, and a top electrode formed on the electrode modification layer.

[0009] The material of the substrate is selected from a glass sheet, a PET plastic film, or a PI plastic film;

[0010] Alternatively, the transparent bottom electrode is selected from any one or a combination of indium tin oxide (ITO) conductive glass, fluorine-doped tin dioxide (FTO) glass, and aluminum-doped zinc oxide (AZO) glass;

[0011] Alternatively, the electron transport layer is selected from any one or a combination of zinc oxide, tin dioxide, PFN, PFN-Br, PEI, and PEIE; the material concentration is 50 - 150 mg / mL;

[0012] Alternatively, the material of the acceptor layer is selected from any one or a combination of N2200, Y6, ITIC, and PC60BM; the material concentration is 5 - 20 mg / mL.

[0013] The structural formula of the above-mentioned compound is as follows:

[0014]

[0015]

[0016] Furthermore, the ion gel is composed of a polymer and an ionic liquid. The ionic liquid is composed of a cation and an anion. The polymer is selected from any one combination of PMMA and PVDF, PVDF-TrFE, and PVDF-HEP. The cation of the ionic liquid is selected from + [EMIM] + [PDADMA] + [DEMA] + [BMIM] - [TFSI] - [BF4] - [PF6]

[0017] The structural formula of the above-mentioned compound is as follows:

[0018]

[0019] Furthermore, the material of the donor layer is selected from any one or a combination of PM6, D18, PBDB-T, J52, P3HT, and PTB7-Th, and any one or a combination of BCF, BF3, F4TCNQ, and iodine vapor is added as a dopant; the concentration of the donor layer material is 5 - 20 mg / mL, and the addition amount of the dopant is 5 - 20% of the mass of the donor layer;

[0020] The structural formula of the above-mentioned compound is as follows:

[0021]

[0022]

[0023] Furthermore, the electrode modification layer is selected from any one or a combination of LiF, PFN, PFN-Br, BCP, PEI, and PEIE; the thickness of the electrode modification layer is 5-20 nm;

[0024] The structural formula of the above-mentioned compound is as follows:

[0025]

[0026] Furthermore, the material of the top electrode layer is at least one of calcium, magnesium, aluminum, and ytterbium; the thickness of the top electrode layer is 50-100 nm;

[0027] Alternatively, both the bottom electrode and the top electrode are strip-shaped and perpendicular to each other, forming a cross electrode array, and each intersection point is a sensor pixel; when the sensor is illuminated, the ions in the ion gel are driven by the photo-generated voltage to dope the donor material, thereby causing the photo-response sensitivity to change adaptively.

[0028] Furthermore, it includes the following steps:

[0029] (1) Deposit a bottom electrode on a clean substrate using magnetron sputtering or spin coating method;

[0030] (2) Spin coat or scrape coat an electron transport layer on the bottom electrode, and the solvent is any one or a combination of ethanol, methanol, water, and 2-methoxyethanol;

[0031] (3) Spin coat or scrape coat a receptor layer on the electron transport layer, and the solvent is one or a combination of chloroform, toluene, and chlorobenzene;

[0032] (4) Spin coat an ion gel layer on the receptor layer, and the solvent is one or a combination of ethanol, isopropanol, ethyl acetate, and acetone, and its solubility is orthogonal to the receptor solvent and will not damage the receptor layer;

[0033] (5) Spin coat or scrape coat a donor layer on the ion gel layer, and the solvent is one or a combination of chloroform, carbon disulfide, and tetrahydrofuran, and its solubility is orthogonal to the receptor and ion gel solvents and will not damage the receptor layer;

[0034] (6) Spin coat or vacuum deposit an electrode modification layer on the donor layer, and the spin coating solvent is any one or a combination of ethanol, methanol, water, and 2-methoxyethanol;

[0035] (7) A top electrode is vacuum-evaporated on the electrode modification layer.

[0036] Applications of the event sensor as described above in the Internet of Things and / or drones.

[0037] Applications of the event sensor as described above in autonomous driving.

[0038] The advantages and positive effects achieved by the present invention are as follows:

[0039] 1. An event sensing function with an adaptive light response regulation ability is realized within a single diode. The sensor of the present invention can exhibit light intensity adaptation and signal filtering functions, capable of reducing noise and enhancing signal contrast.

[0040] 2. After adapting to the background light for a period of time, the response of the sensor of the present invention to the same light intensity becomes smaller, but it is more sensitive to the change of light intensity relative to the background light, which can enhance the contrast and prevent overexposure. After removing the background light, the sensor will recover its sensitivity to weak light. Combining the light intensity adaptation function, the light intensity dynamic range of this sensor can reach 186 dB.

[0041] 3. When the light signal intensity changes sinusoidally with time, the sensor of the present invention has the highest sensitivity to signals in the frequency range of 100 Hz - 1000 Hz. When the noise change frequency is outside this frequency range, the sensor can effectively filter out the noise signal. This frequency range changes with the change of light intensity and can adapt to different frequencies of noise.

[0042] 4. To solve the problems of existing event sensors, the present invention uses the physical process of regulating light sensitivity by ion current in the human eye retina to realize an event sensing function with an adaptive light response regulation ability within a single diode. The sensor can exhibit light intensity adaptation and signal filtering functions, capable of reducing noise and enhancing signal contrast.

[0043] 5. The event sensor provided by the present invention detects the change of light intensity and generates voltage or current pulses, and can realize functions such as light intensity adaptation and signal filtering. When the background light changes, the light response of the sensor is approximately proportional to the difference between the light signal and the background light. When the light signal intensity changes sinusoidally with time, the sensor has the highest sensitivity to signals in the frequency range of 100 Hz - 1000 Hz. The adaptive event sensor provided by the present invention simulates the signal perception and processing functions of the human eye retina and can be applied to new cameras and machine vision systems. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 It is a schematic structural connection diagram of the event sensor of the present invention;

[0045] Figure 2Cross-sectional transmission electron micrograph of the device structure in Example 1 of the present invention;

[0046] Figure 3 Vertical distribution diagram of the donor, ionic gel, and acceptor in Example 1 of the present invention;

[0047] Figure 4 Absorption spectrum change diagram of the sensor in Example 1 of the present invention during the process of applying an external voltage of 1V for 15s and then removing it;

[0048] Figure 5 Response diagram of the sensor in Example 1 of the present invention to the same optical signal after adapting for 1s in background light with different light intensities;

[0049] Figure 6 Response diagram of the sensor in Example 1 of the present invention to the same optical signal after adapting for different times in background light;

[0050] Figure 7 Relationship diagram of the light response of the sensor in Example 1 of the present invention with the adaptation time and light intensity;

[0051] Figure 8 Relationship diagram of the light response of the sensor in Example 1 of the present invention with the light intensity and background light intensity;

[0052] Figure 9 Relationship diagram of the light response threshold light intensity of the sensor in Example 1 of the present invention with the background light intensity;

[0053] Figure 10 Response signal diagram of the sensor in Example 1 of the present invention to sinusoidal light with different frequencies;

[0054] Figure 11 Relationship diagram of the response peak of the sensor in Example 1 of the present invention with the peak intensity of sinusoidal light;

[0055] Figure 12 Response signal diagram of the sensor in Example 1 of the present invention to overlapping signal light and background light;

[0056] Figure 13 Imaging result diagrams of Example 1 of the present invention without adaptation time and after adapting for one second in background light;

[0057] Figure 14 Response diagram of the sensor in Example 2 of the present invention to the same optical signal after being irradiated with background light of different light intensities for 1s;

[0058] Figure 15 Relationship diagram of the response peak of the sensor in Example 2 of the present invention with the peak intensity of sinusoidal light;

[0059] Figure 16Response graph of the sensor of Embodiment 3 of the present invention to the same optical signal after being irradiated by background light with different light intensities for 1 s;

[0060] Figure 17 Relationship graph between the response peak value of the sensor of Embodiment 3 of the present invention and the peak intensity of sinusoidal light;

[0061] Figure 18 Response graph of the sensor of Embodiment 4 of the present invention to the same optical signal after being irradiated by background light with different light intensities for 1 s;

[0062] Figure 19 Relationship graph between the response peak value of the sensor of Embodiment 4 of the present invention and the peak intensity of sinusoidal light;

[0063] Figure 20 Response graph of the sensor of Embodiment 5 of the present invention to the same optical signal after being irradiated by background light with different light intensities for 1 s;

[0064] Figure 21 Relationship graph between the response peak value of the sensor of Embodiment 5 of the present invention and the peak intensity of sinusoidal light;

[0065] Figure 22 Response graph of the sensor of Embodiment 6 of the present invention to the same optical signal after being irradiated by background light with different light intensities for 1 s;

[0066] Figure 23 Relationship graph between the response peak value of the sensor of Embodiment 6 of the present invention and the peak intensity of sinusoidal light;

[0067] Figure 24 Response graph of the sensor of Embodiment 7 of the present invention to the same optical signal after being irradiated by background light with different light intensities for 1 s;

[0068] Figure 25 Relationship graph between the response peak value of the sensor of Embodiment 7 of the present invention and the peak intensity of sinusoidal light. Detailed implementation manners

[0069] The present invention will be further described in detail below through specific embodiments. The following embodiments are only descriptive and not restrictive, and the protection scope of the present invention cannot be limited thereby.

[0070] The raw materials used in the present invention are all conventional commercially available products without special instructions. The methods used in the present invention are all conventional methods in the art without special instructions. The masses of all substances used in the present invention are the masses commonly used. The structures, connection relationships, etc. not described in detail in the present invention can be understood as conventional technical means in the art.

[0071] An event sensor with the ability of adaptive optical response regulation, such as Figure 1As shown, the sensor includes a substrate 1, a bottom electrode 2, an electron transport layer 3, a receptor layer 4, an ionic gel layer 5, a donor layer 6, an electrode modification layer 7, and a top electrode 8, which are connected in sequence from bottom to top.

[0072] Preferably, a substrate, a transparent bottom electrode formed on the substrate, an electron transport layer formed on the bottom electrode, a receptor formed on the electron transport layer, an ionic gel layer formed on the receptor, a donor doped with a P-type dopant formed on the ionic gel layer, an electrode modification layer formed on the donor, and a top electrode formed on the electrode modification layer.

[0073] Preferably, the material of the substrate layer is selected from a glass sheet, a polyethylene terephthalate plastic film, or a polyimide plastic film;

[0074] Alternatively, the transparent bottom electrode is selected from any one or a combination of indium tin oxide (ITO) conductive glass, fluorine-doped tin dioxide (FTO) glass, and aluminum-doped zinc oxide (AZO) glass;

[0075] Alternatively, the electron transport layer is selected from any one or a combination of zinc oxide, tin dioxide, PFN, PFN-Br, PEI, and PEIE; the material concentration is 50 - 150 mg / mL;

[0076] Alternatively, the receptor material is selected from any one or a combination of N2200, Y6, ITIC, and PC60BM; the material concentration is 5 - 20 mg / mL.

[0077] The structural formula of the above-mentioned compound is as follows:

[0078]

[0079]

[0080] Preferably, the ionic gel is composed of a polymer and an ionic liquid. The ionic liquid is composed of a cation and an anion. Among them, the polymer is selected from any one combination of PMMA and PVDF, PVDF-TrFE, and PVDF-HEP. Among them, the cation of the ionic liquid is selected from any one or a combination of [EMIM]+, [PDADMA]+, [DEMA]+, and [BMIM]+, and the anion is selected from any one or a combination of [TFSI]-, [BF4]-, and [PF6]-; the total concentration of the polymer and the ionic liquid is 2 - 10 mg / mL.

[0081] The structural formula of the above-mentioned compound is as follows:

[0082]

[0083] Preferably, the donor material is selected from any one or a combination of PM6, D18, PBDB-T, J52, P3HT, and PTB7-Th, and any one or a combination of BCF, BF3, F4TCNQ, and iodine vapor is added as a dopant; the concentration of the donor material is 5-10 mg / mL, and the addition amount of the dopant is 5-20% of the mass of the donor layer;

[0084] The structural formula of the above-mentioned compound is as follows:

[0085]

[0086]

[0087] Preferably, the electrode modification layer is selected from any one or a combination of LiF, PFN, PFN-Br, BCP, PEI, and PEIE; the thickness of the electrode modification layer is 5-20 nm;

[0088] The structural formula of the above-mentioned compound is as follows:

[0089]

[0090] Preferably, the top electrode layer is at least one of calcium, magnesium, aluminum, and ytterbium; the thickness of the top electrode layer is 50-100 nm;

[0091] Alternatively, both the bottom electrode and the top electrode are strip-shaped and perpendicular to each other to form a cross electrode array, and each intersection point is a sensor pixel; when the sensor is illuminated, the ions in the ion gel are driven by the photo-generated voltage to dope the donor material, thereby causing the photo-response sensitivity to change adaptively.

[0092] The preparation method of the event sensor with the ability of adaptive photo-response regulation as described above includes the following steps:

[0093] (1) Deposit a bottom electrode on a clean substrate by magnetron sputtering or spin coating method;

[0094] (2) Spin coat or scrape coat an electron transport layer on the bottom electrode, and the solvent is any one or a combination of ethanol, methanol, water, and 2-methoxyethanol;

[0095] (3) Spin coat or scrape coat a receptor layer on the electron transport layer, and the solvent is one or a combination of chloroform, toluene, and chlorobenzene;

[0096] (4) Spin coat an ion gel layer on the receptor layer, and the solvent is one or a combination of ethanol, isopropanol, ethyl acetate, and acetone, and its solubility is orthogonal to the receptor solvent and will not damage the receptor layer;

[0097] (5) Spin-coat or blade-coat a donor layer on the ionic gel layer. The solvent is one or a combination of chloroform, carbon disulfide, and tetrahydrofuran, and its solubility is orthogonal to that of the acceptor and the ionic gel solvent, so it will not damage the acceptor layer;

[0098] (6) Spin-coat or vacuum-deposit an electrode modification layer on the donor layer. The spin-coating solvent is any one or a combination of ethanol, methanol, water, and 2-methoxyethanol;

[0099] (7) Vacuum-deposit a top electrode on the electrode modification layer.

[0100] Application of the event sensor as described above in the Internet of Things and / or drones.

[0101] Application of the event sensor as described above in autonomous driving.

[0102] Specifically, the related preparation and detection are as follows:

[0103] Example 1

[0104] Preparation and performance testing of an event sensor with self-adaptive light response regulation ability:

[0105] Several glass substrates with a specification of 15 mm × 15 mm square pieces. Magnetron sputtering deposits ITO with a thickness of 120 nm, and the sheet resistance is about 20 Ω / sq. Ultrasonically clean the ITO glass in detergent, deionized water, acetone, and isopropanol for 30 minutes respectively. Dry the ITO glass under nitrogen conditions and clean it with plasma at a power of 100 W for 1 minute. Dissolve zinc acetate dihydrate in 2-methoxyethanol to prepare a solution with a concentration of 100 mg / ml, add 2% by volume of ethanolamine, stir for 6 hours to dissolve, then filter it with a 0.25 μm pore size PVDF filter head, and spin-coat it on the ITO glass at a speed of 3000 rpm. After annealing at 200 °C for 20 minutes, transfer it to a nitrogen glove box for standby. Dissolve the acceptor material in a chlorobenzene solution with a concentration of 10 mg / ml, and spin-coat it at a speed of 2500 rpm after complete dissolution. Anneal at 110 °C for 15 minutes. Clean it with plasma at a power of 40 W for 20 seconds. Dissolve PMMA, PVDF-TrFE, and [EMIM][TFSI] in an acetone solution in a mass ratio of 1:3:3 to make the total concentration 4 mg / ml, and spin-coat it on the acceptor at a speed of 3000 rpm. Anneal at 100 °C for 10 minutes. Clean it with plasma at a power of 40 W for 20 seconds. Dissolve the donor material in a tetrahydrofuran (THF) solution with a concentration of 8 mg / ml, add a dopant of 15% of the donor mass, and spin-coat it on the ionic gel at a speed of 2500 rpm after complete dissolution. Finally, use vacuum deposition to deposit a 10 nm thick LiF and an 80 nm thick Mg as the top electrode.

[0106] Performance test of the above-mentioned event sensor with the ability of self-adaptive light response regulation:

[0107] As Figures 2 to 3 shown, Figure 2 This is the transmission electron micrograph of the device structure cross-section in Example 1 of the present invention, Figure 3 and this is the vertical distribution diagram of the donor, ionic gel, and acceptor in Example 1 of the present invention. As Figure 4 shown, when a voltage is applied, the ions in the ionic gel layer of this event sensor will dope the donor layer, resulting in a decrease in the undoped signal and an increase in the doped signal in the absorption spectrum. This phenomenon can be driven by the voltage generated by light illumination and will also affect the light response sensitivity. As Figure 5 shown, this event sensor generates a positive voltage pulse when the light intensity increases, and the peak value of the response pulse to the same light intensity decreases as the background light increases, demonstrating the light intensity adaptation ability, while a negative voltage pulse is generated when the light intensity decreases. As Figure 6 shown, after this event sensor is irradiated by the background light, the light response gradually decreases and finally stabilizes as the time interval increases. As Figure 7 shown, the speed at which this event sensor's light response adapts to the background light increases as the background light intensity increases and can reach 1 / e within 16 ms. As Figure 8 shown, the light response curve of this event sensor moves towards the strong light direction as the background light intensity increases. As Figure 9 shown, the response threshold of this event sensor is proportional to the background light and can have higher sensitivity to the change of the relative background light. As Figure 10 shown, this event sensor has different response sensitivities to light signals with the same light intensity but different frequencies of change, and the medium-frequency signal is stronger. As Figure 11 shown, the response sensitivity of this event sensor changes with the light intensity, the curve is bell-shaped, and it moves towards the strong light direction as the light intensity increases. As Figure 12 shown, this event sensor has different responses to noise and light signals that are superimposed together and have the same peak light intensity. The sensitivity to the light signal is 10 times that of the noise, realizing the noise filtering function. As Figure 13 shown, the 5×5 event sensor array of this can effectively image, and the contrast can be enhanced after adaptation in the background light.

[0108] Example 2

[0109] Preparation and test of an event sensor with the ability of self-adaptive light response regulation:

[0110] A number of PET plastic substrates, in the form of 15 mm × 15 mm square pieces. Magnetron sputtering deposition of FTO with a thickness of 120 nm, and the sheet resistance is about 43 Ω / sq. Ultrasonically clean the FTO glass in detergent, deionized water, acetone, and isopropyl alcohol for 30 minutes respectively. Dry the FTO glass under nitrogen conditions and use plasma cleaning at a power of 100 W for 1 minute. Dissolve zinc acetate dihydrate in 2-methoxyethanol to form a solution with a concentration of 100 mg / ml, add 2% by volume of ethanolamine, stir for 6 hours to dissolve, then filter using a 0.25 μm pore size PVDF filter head, and spin-coat on the FTO glass at a speed of 3000 rpm. After annealing at 200 °C for 20 minutes, transfer it to a nitrogen glove box for standby. Dissolve N2200 in chlorobenzene solution with a concentration of 10 mg / ml, spin-coat at a speed of 2500 rpm after complete dissolution, and anneal at 100 °C for 15 minutes. Use plasma cleaning at a power of 40 W for 20 seconds. Dissolve PMMA, PVDF-HEP, and [PDADMA][BF4] in acetone solution at a mass ratio of 1:3:3 to make the total concentration 4 mg / ml, spin-coat on the acceptor at a speed of 3000 rpm, and anneal at 100 °C for 10 minutes. Use plasma cleaning at a power of 40 W for 20 seconds. Dissolve PBDB-T in tetrahydrofuran (THF) solution with a concentration of 8 mg / ml, add 15% of the donor mass of BCF dopant, spin-coat at a speed of 2500 rpm after complete dissolution. Finally, deposit 10 nm thick LiF and 80 nm thick Mg as the top electrode by vacuum evaporation.

[0111] As Figure 14 shown, the event sensor generates a positive voltage pulse when the light intensity increases, while the peak value of the response pulse to the same light intensity decreases with the increase of the background light, demonstrating the light intensity adaptation ability, and generates a negative voltage pulse when the light intensity decreases. As Figure 15 shown, the event sensor has different response sensitivities to light signals with the same light intensity but different frequencies of change. The medium-frequency signal is stronger, and the frequency response changes with the change of light intensity.

[0112] Example 3

[0113] Preparation and testing of an event sensor with self-adaptive light response regulation ability:

[0114] Several PI plastic substrates, with a specification of 15 mm × 15 mm square pieces. Magnetron sputtering deposition of AZO with a thickness of 120 nm, and the sheet resistance is about 105 Ω / sq. Ultrasonically clean the AZO glass in detergent, deionized water, acetone, and isopropyl alcohol for 30 minutes respectively. Dry the AZO glass under nitrogen conditions and use plasma cleaning at a power of 100 W for 1 minute. Dissolve zinc acetate dihydrate in 2-methoxyethanol to form a solution with a concentration of 100 mg / ml, add 2% by volume of ethanolamine, stir for 6 hours to dissolve, then filter with a 0.25 μm pore size PVDF filter head, and spin-coat on the AZO glass at a speed of 3000 revolutions per minute. After annealing at 200 °C for 20 minutes, transfer it to a nitrogen glove box for standby. Dissolve N2200 in chlorobenzene solution with a concentration of 10 mg / ml, spin-coat at a speed of 2500 revolutions per minute after complete dissolution, and anneal at 100 °C for 15 minutes. Use plasma cleaning at a power of 40 W for 20 seconds. Dissolve PMMA, PVDF, and [BMIM][PF6] in acetone solution at a mass ratio of 1:3:3 to make the total concentration 4 mg / ml, spin-coat on the acceptor at a speed of 3000 revolutions per minute, and anneal at 100 °C for 10 minutes. Use plasma cleaning at a power of 40 W for 20 seconds. Dissolve PBDB-T in tetrahydrofuran (THF) solution with a concentration of 8 mg / ml, add a BCF dopant at 15% of the donor mass, spin-coat at a speed of 2500 revolutions per minute after complete dissolution. Finally, deposit 10 nm thick LiF and 80 nm thick Mg as the top electrode by vacuum evaporation.

[0115] As Figure 16 shown, the event sensor generates a positive voltage pulse when the light intensity increases, and the peak value of the response pulse to the same light intensity decreases with the increase of the background light, demonstrating the light intensity adaptation ability, and generates a negative voltage pulse when the light intensity decreases. As Figure 17 shown, the event sensor has different response sensitivities to light signals with the same light intensity but different frequencies of change. The medium-frequency signal is stronger, and the frequency response changes with the light intensity.

[0116] Example 4

[0117] Preparation and testing of an event sensor with self-adaptive light response regulation ability:

[0118] Several glass substrates, in the specification of 15 mm × 15 mm square pieces. Magnetron sputtering deposition of ITO with a thickness of 120 nm, and the sheet resistance is about 20 Ω / square. Ultrasonically clean the ITO glass in detergent, deionized water, acetone, and isopropyl alcohol for 30 minutes respectively. Dry the ITO glass under the condition of nitrogen, and use plasma cleaning with a power of 100 W for 1 minute. Dissolve zinc acetate dihydrate in 2-methoxyethanol to form a solution with a concentration of 100 mg / ml, add 2% by volume of ethanolamine and 25% by mass of PEI, stir for 6 hours to dissolve, then filter with a 0.25 μm pore size PVDF filter head, and spin-coat on the ITO glass at a speed of 3000 revolutions per minute. After annealing at 200 °C for 20 minutes, transfer it to a nitrogen glove box for standby. Dissolve N2200 and Y6 in a chlorobenzene solution according to a mass ratio of 2:1, with a total concentration of 10 mg / ml. After complete dissolution, spin-coat at a speed of 2500 revolutions per minute and anneal at 100 °C for 15 minutes. Use plasma cleaning with a power of 40 W for 20 seconds. Dissolve PMMA, PVDF-TrFE, and [DEMA][TFSI] in an acetone solution according to a mass ratio of 1:3:3, with a total concentration of 4 mg / ml, and spin-coat on the acceptor at a speed of 3000 revolutions per minute and anneal at 100 °C for 10 minutes. Use plasma cleaning with a power of 40 W for 20 seconds. Dissolve D18 in a chloroform (CF) solution with a concentration of 8 mg / ml, add a BF3 dopant with 15% of the donor mass, and spin-coat at a speed of 2500 revolutions per minute after complete dissolution. Dissolve PFN in a methanol solution with a concentration of 1 mg / ml, and spin-coat at a speed of 3500 revolutions per minute after complete dissolution as the electrode modification layer. Finally, use vacuum evaporation to evaporate a 20-nm-thick magnesium and a 60-nm-thick aluminum as the top electrode in sequence.

[0119] As Figure 18 shown, the event sensor generates a positive voltage pulse when the light intensity increases, and the peak value of the response pulse to the same light intensity decreases with the increase of the background light, reflecting the light intensity adaptation ability, and generates a negative voltage pulse when the light intensity decreases. As Figure 19 shown, the event sensor has different response sensitivities to optical signals with different frequencies but the same light intensity. The medium-frequency signal is stronger, and the frequency response changes with the light intensity.

[0120] Example 5

[0121] Preparation and testing of an event sensor with an adaptive light response regulation ability:

[0122] Several glass substrates, in the form of 15 mm × 15 mm square pieces. Magnetron sputtering deposition of ITO with a thickness of 120 nm, and the sheet resistance is about 20 Ω / sq. Ultrasonically clean the ITO glass in detergent, deionized water, acetone, and isopropanol for 30 minutes respectively. Dry the ITO glass under nitrogen conditions and use plasma cleaning at a power of 100 W for 1 minute. Add PEIE with a mass of 5% of the tin dioxide mass to the ethanol dispersion of tin dioxide nanoparticles with a mass ratio of 10%, spin-coat it on the ITO glass at a speed of 3000 revolutions per minute, transfer it to a nitrogen glove box after annealing at 200 °C for 20 minutes. Dissolve N2200 and ITIC in a chlorobenzene solution at a mass ratio of 2:1, with a total concentration of 10 mg / mL. After complete dissolution, spin-coat it at a speed of 2500 revolutions per minute and anneal at 100 °C for 15 minutes. Use plasma cleaning at a power of 40 W for 20 seconds. Dissolve PMMA, PVDF-TrFE, and [EMIM][BF4] in an acetone solution at a mass ratio of 1:3:3, with a total concentration of 4 mg / mL. Spin-coat it on the acceptor at a speed of 3000 revolutions per minute and anneal at 100 °C for 10 minutes. Use plasma cleaning at a power of 40 W for 20 seconds. Dissolve PM6 in a tetrahydrofuran (THF) solution with a concentration of 8 mg / mL, add a dopant of F4TCNQ with a mass of 15% of the donor mass, and spin-coat it at a speed of 2500 revolutions per minute after complete dissolution. Finally, use vacuum evaporation to deposit 10 nm thick BCP, 20 nm thick calcium, and 60 nm thick aluminum as the top electrode in sequence.

[0123] As Figure 20 shown, the event sensor generates a positive voltage pulse when the light intensity increases, while the peak value of the response pulse to the same light intensity decreases with the increase of the background light, demonstrating the light intensity adaptation ability, and generates a negative voltage pulse when the light intensity decreases. As Figure 21 shown, the event sensor has different response sensitivities to light signals with different frequencies but the same light intensity. The signal at medium frequency is stronger, and the frequency response changes with the light intensity.

[0124] Example 6

[0125] Preparation and testing of an event sensor with self-adaptive light response regulation ability:

[0126] A number of glass substrates, in the specification of 15 mm × 15 mm square pieces. Magnetron sputtering deposition of ITO with a thickness of 120 nm, and the sheet resistance is about 20 Ω / square. Ultrasonically clean the ITO glass in detergent, deionized water, acetone, and isopropanol for 30 minutes respectively. Dry the ITO glass under the condition of nitrogen, and use plasma cleaning with a power of 100 W for 1 minute. Take an ethanol dispersion of tin dioxide nanoparticles with a mass ratio of 10%, and spin-coat it on the ITO glass at a rotation speed of 3000 revolutions per minute, and anneal at 200 °C for 20 minutes. Dissolve PFN-Br in a methanol solution with a concentration of 1 mg per milliliter. After complete dissolution, spin-coat it at a rotation speed of 3500 revolutions per minute to jointly form an electron transport layer with tin dioxide. Then transfer it to a nitrogen glove box. Dissolve PC60BM in a chlorobenzene solution with a total concentration of 20 mg per milliliter. After complete dissolution, spin-coat it at a rotation speed of 2000 revolutions per minute, and anneal at 100 °C for 15 minutes. Use plasma cleaning with a power of 40 W for 20 seconds. Dissolve PMMA, PVDF-TrFE, [EMIM][BF4], and [EMIM][TFSI] in an acetone solution at a mass ratio of 1:3:1:2 to make the total concentration 4 mg per milliliter, and spin-coat it on the acceptor at a rotation speed of 3000 revolutions per minute, and anneal at 100 °C for 10 minutes. Use plasma cleaning with a power of 40 W for 20 seconds. Dissolve the P3HT donor in a tetrahydrofuran (THF) solution with a concentration of 8 mg per milliliter, add a doping agent of F4TCNQ accounting for 5% of the donor mass, and spin-coat it at a rotation speed of 2500 revolutions per minute after complete dissolution. Finally, use vacuum evaporation to evaporate 20 nm thick ytterbium and 60 nm thick aluminum in sequence as the top electrode.

[0127] As Figure 22 shown, the event sensor generates a positive voltage pulse when the light intensity increases, while the peak value of the response pulse to the same light intensity decreases with the increase of the background light, reflecting the light intensity adaptation ability, and generates a negative voltage pulse when the light intensity decreases. As Figure 23 shown, the event sensor has different response sensitivities to optical signals with different frequencies but the same light intensity. The signal at medium frequency is stronger, and the frequency response changes with the light intensity.

[0128] Example 7

[0129] Preparation and testing of an event sensor with self-adaptive light response regulation ability:

[0130] Several glass substrates, with a specification of 15 mm × 15 mm square pieces. Magnetron sputtering deposition of ITO with a thickness of 120 nm, and the sheet resistance is about 20 Ω / square. Ultrasonically clean the ITO glass in detergent, deionized water, acetone, and isopropyl alcohol for 30 minutes respectively. Dry the ITO glass under the condition of nitrogen, and use plasma cleaning with a power of 100 W for 1 minute. Dissolve PEI in methanol solution with a concentration of 4 mg per milliliter, and spin-coat at a speed of 3500 revolutions per minute after complete dissolution, as the electron transport layer. Then transfer it to a nitrogen glove box for standby. Dissolve the ITIC acceptor material in chlorobenzene solution with a concentration of 10 mg per milliliter, spin-coat at a speed of 2500 revolutions per minute after complete dissolution, and anneal at 100 °C for 15 minutes. Use plasma cleaning with a power of 40 W for 20 seconds. Dissolve PMMA, PVDF-TrFE, [BMIM][PF6], and [PDADMA][BF4] in acetone solution with a mass ratio of 1:3:1:2, so that the total concentration is 4 mg per milliliter, and spin-coat on the acceptor at a speed of 3000 revolutions per minute, and anneal at 100 °C for 10 minutes. Use plasma cleaning with a power of 40 W for 20 seconds. Dissolve the PTB7-Th donor material in tetrahydrofuran (THF) solution with a concentration of 8 mg per milliliter, and spin-coat at a speed of 2500 revolutions per minute after complete dissolution. Place iodine solid in a glass bottle on a 100 °C heating table, and place the device at the bottle mouth to fumigate with iodine vapor for 1 minute. Finally, deposit 10 nm thick LiF and 80 nm thick aluminum as the top electrode by vacuum evaporation.

[0131] As Figure 24 shown, the event sensor generates a positive voltage pulse when the light intensity increases, while the peak value of the response pulse to the same light intensity decreases with the increase of the background light, reflecting the light intensity adaptation ability, and generates a negative voltage pulse when the light intensity decreases. As Figure 25 shown, the event sensor has different response sensitivities to optical signals with different frequencies but the same light intensity. The medium-frequency signal is stronger, and the frequency response changes with the light intensity.

[0132] The above embodiments are the preferred embodiments of the present invention, but the embodiments of the present invention are not limited by the above embodiments. Any other changes, modifications, substitutions, combinations, and simplifications made without departing from the spirit and principle of the present invention shall be equivalent replacement methods and are all included in the protection scope of the present invention.

Claims

1. An event sensor with the ability of adaptive light response regulation, characterized in that: The sensor includes a substrate, a bottom electrode, an electron transport layer, a receptor layer, an ion gel layer, a donor layer, an electrode modification layer, and a top electrode, which are sequentially connected from bottom to top.

2. The event sensor with the ability of self-adaptive light response regulation according to claim 1, wherein: A substrate, a transparent bottom electrode formed on the substrate, an electron transport layer formed on the bottom electrode, a receptor formed on the electron transport layer, an ion gel layer formed on the receptor, a donor doped with a P-type dopant formed on the ion gel layer, an electrode modification layer formed on the donor, and a top electrode formed on the electrode modification layer.

3. The event sensor with an adaptive light response regulation ability according to claim 1, characterized in that: The material of the substrate is selected from a glass sheet, a PET plastic film, or a PI plastic film; Alternatively, the transparent bottom electrode is selected from any one or a combination of indium tin oxide (ITO) conductive glass, fluorine-doped tin dioxide (FTO) glass, and aluminum-doped zinc oxide (AZO) glass; Alternatively, the electron transport layer is selected from any one or a combination of zinc oxide, tin dioxide, PFN, PFN-Br, PEI, and PEIE; the material concentration is 50-150 mg / mL; Alternatively, the material of the receptor layer is selected from any one or a combination of N2200, Y6, ITIC, and PC60BM; the material concentration is 5-20 mg / mL.

4. The event sensor with an adaptive light response regulation ability according to claim 1, characterized in that: The ionic gel is composed of a mixture of a polymer and an ionic liquid. The ionic liquid consists of a cation and an anion. The polymer is selected from any combination of PMMA and PVDF, PVDF-TrFE, and PVDF-HEP. The cation of the ionic liquid is selected from + , [PDADMA] + , [DEMA] + , [BMIM] + or any combination thereof, and the anion is selected from - , [BF4] - , [PF6] - or any combination thereof. The total concentration of the polymer and the ionic liquid is 2-10 mg / mL.

5. The event sensor with an adaptive light response regulation ability according to claim 1, characterized in that: The material of the donor layer is selected from any one or a combination of PM6, D18, PBDB-T, J52, P3HT, and PTB7-Th, and any one or a combination of BCF, BF3, F4TCNQ, and iodine vapor is added as a dopant; the concentration of the donor layer material is 5-20 mg / mL, and the addition amount of the dopant is 5-20% of the mass of the donor layer.

6. The event sensor with the ability of adaptive light response regulation according to claim 1, wherein: The electrode modification layer is selected from any one or a combination of LiF, PFN, PFN-Br, BCP, PEI, and PEIE; the thickness of the electrode modification layer is 5-20 nm.

7. The event sensor with an adaptive light response regulation ability according to any one of claims 1 to 6, characterized in that: The material of the top electrode layer is selected from at least one of calcium, magnesium, aluminum, and ytterbium; the thickness of the top electrode layer is 50-100 nm; Alternatively, both the bottom electrode and the top electrode are strip-shaped and perpendicular to each other to form a cross electrode array, and each intersection point is a sensor pixel; when the sensor is irradiated with light, the ions in the ion gel are driven by the photo-generated voltage to dope the donor material, thereby causing the light response sensitivity to change adaptively.

8. The preparation method of the event sensor with the ability of adaptive light response regulation according to any one of claims 1 to 7, characterized in that: It includes the following steps: (1) Deposit a bottom electrode on a clean substrate using magnetron sputtering or spin coating; (2) Spin coat or scrape coat an electron transport layer on the bottom electrode, and the solvent is any one or a combination of ethanol, methanol, water, and 2-methoxyethanol; (3) Spin coat or scrape coat a receptor layer on the electron transport layer, and the solvent is one or a combination of chloroform, toluene, and chlorobenzene; (4) Spin coat an ion gel layer on the receptor layer, and the solvent is any one or a combination of ethanol, isopropanol, ethyl acetate, and acetone, and its solubility is orthogonal to the receptor solvent and will not damage the receptor layer; (5) Spin-coat or blade-coat a donor layer on the ionic gel layer, and the solvent is one or a combination of chloroform, carbon disulfide, and tetrahydrofuran. Its solubility is orthogonal to that of the acceptor and the ionic gel solvent and will not damage the acceptor layer; (6) Spin-coat or vacuum-deposit an electrode modification layer on the donor layer, and the spin-coating solvent is any one or a combination of ethanol, methanol, water, and 2-methoxyethanol; (7) Vacuum-deposit a top electrode on the electrode modification layer.

9. The application of the event sensor according to any one of claims 1 to 7 in the Internet of Things and / or drones.

10. The application of the event sensor according to any one of claims 1 to 7 in autonomous driving.

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