Light-emitting display device

Abstract

Disclosed is a light emitting display device including: a substrate having a first region and a second region; a plurality of first light emitting units disposed in the first area; a second light emitting unit and a transmission unit disposed in the second region, the second light emitting unit and the transmission unit being spaced apart from each other; a pixel defining film disposed to surround the plurality of first light emitting units and the second light emitting units; and a lens layer disposed in the transmission unit, the lens layer including a first refractive index layer and a second refractive index layer on the first refractive index layer and having a higher refractive index than the first refractive index layer, the lens layer having a curved interface disposed between the first refractive index layer and the second refractive index layer. The light-emitting display device of the present disclosure can improve the sensitivity of the sensor unit and improve the reliability of the internal elements.

Description

[0001] This application claims the benefit of Korean Patent Application No. P10-2024-0010178, filed on January 23, 2024, which is incorporated herein by reference in its entirety as if fully set forth herein. Technical Field

[0002] The present disclosure relates to a display device, and more particularly, to a light-emitting display device capable of improving the sensitivity of a sensor unit and the reliability of internal components. Background Art

[0003] Display devices for displaying images on TVs, monitors, smartphones, tablets, laptops, etc. are applied in various ways and forms.

[0004] A display device includes a plurality of pixels configured to display an image and transistors configured to control the operation of each pixel.

[0005] Among display devices, a light-emitting display device having light-emitting elements in a display panel without a separate light source to achieve device compactness and clear color display is considered a competitive application.

[0006] The light-emitting element may include: an anode and a cathode as electrodes facing each other, a light-emitting layer disposed between the anode and the cathode, and a common layer configured to transport holes and electrons to the light-emitting layer.

[0007] In addition, in recent years, a structure including a transmissive unit to improve the transmittance of a display device has been considered, and various studies and developments have been conducted. Summary of the Invention

[0008] Embodiments of the present disclosure provide a light-emitting display device with improved sensitivity of a sensor unit.

[0009] Embodiments of the present disclosure provide a light-emitting display device capable of improving the reliability of a transistor.

[0010] Embodiments of the present disclosure provide a light-emitting display device having a transmissive unit, in which a lens layer is provided in the transmissive unit to improve light collection efficiency, thereby improving the light detection rate of the transmissive unit, and a light-shielding film is provided between the transmissive unit and an adjacent region thereof to prevent deterioration of components due to transmission of lateral light.

[0011] Embodiments of the present disclosure provide a light-emitting display device capable of reducing the defect rate of a display device, thereby reducing the amount of materials (such as gases and etching liquids used in manufacturing the display device) used in the entire manufacturing process, and thus reducing greenhouse gas generation due to the manufacturing process.

[0012] A light-emitting display device according to an embodiment of the present disclosure includes: a substrate having a first region and a second region; a plurality of first light-emitting units disposed in the first region; a second light-emitting unit and a transmissive unit disposed in the second region, the second light-emitting unit and the transmissive unit being separated from each other; a pixel defining film disposed to surround the plurality of first light-emitting units and the second light-emitting unit; and a lens layer disposed in the transmissive unit, the lens layer including a first refractive index layer and a second refractive index layer located on the first refractive index layer and having a higher refractive index than the first refractive index layer, the lens layer having a curved interface disposed between the first refractive index layer and the second refractive index layer.

[0013] A light-emitting display device according to an embodiment of the present disclosure includes: a substrate including a display region and a non-display region surrounding the display region; a plurality of sub-pixels that emit light and a transmissive unit disposed between the sub-pixels in the display region; and a sensor unit corresponding to the transmissive unit, wherein: a recess in which at least one insulating film on the substrate is removed is provided in the transmissive unit, and a lens layer is provided in the recess such that light incident on the substrate from above is converged by the lens layer and collected by the sensor unit. Description of the Drawings

[0014] The drawings included to provide a further understanding of the present disclosure and incorporated into this application and constituting a part of this application illustrate embodiments of the present disclosure and, together with the description, are used to explain the principles of the present disclosure. In the drawings:

[0015] Figure 1 is a schematic plan view showing a light-emitting display device according to an embodiment of the present disclosure;

[0016] Figure 2 is a circuit diagram showing a sub-pixel according to an embodiment of the present disclosure;

[0017] Figure 3 is Figure 1 an enlarged view of region A of

[0018] Figure 4 is along Figure 3 a cross-sectional view taken along line I-I' and II-II' of

[0019] Figure 5 is showing Figure 3 a cross-sectional view of the transmissive unit of

[0020] Figures 6A to 6E is a process cross-sectional view showing a manufacturing method of a light-emitting display device according to an embodiment of the present disclosure;

[0021] Figure 7 It is a cross-sectional view showing a light-emitting display device according to another embodiment of the present disclosure. Detailed Embodiments

[0022] Hereinafter, preferred embodiments of the present disclosure will be described with reference to the accompanying drawings. The same reference numerals will be used throughout the drawings to refer to the same or similar parts, unless otherwise specified. In the following description of the present disclosure, when the detailed description of related known steps, elements, functions, technologies, and configurations may unnecessarily obscure the gist of the present disclosure, the detailed description of such steps, elements, functions, technologies, and configurations may be omitted. In addition, the element names used in the following description are selected for the clear description of the present disclosure and may be different from the element names of actual products.

[0023] The shapes, sizes, ratios, angles, numbers, etc. shown in the drawings for describing various exemplary embodiments of the present disclosure are given only by way of example. The present disclosure is not limited to the illustrations in the drawings. In the present disclosure, when using terms such as "comprising", "having", "including", etc., unless a term such as "only" is used, one or more components may be added. The terms used herein are used to describe specific aspects and are not intended to limit the present disclosure. As used herein, the term "a" used to describe an element in the singular is intended to include a plurality of elements. Elements described in the singular are intended to include a plurality of elements, and vice versa, unless the context clearly indicates otherwise.

[0024] When explaining components or numerical values, even if no clear description of the error or tolerance range is provided, the components or numerical values should be interpreted as including the error or tolerance range.

[0025] When describing the positional relationship between two elements using terms such as "on", "above", "below", and "next to" in various exemplary embodiments of the present disclosure, unless the terms "immediately" or "directly" or "closely" are used, there may be at least one intermediate element between the two elements. It will be understood that when an element or layer is referred to as "connected to" or "coupled to" another element or layer, it may be directly connected to or coupled to the other element or layer, or there may be one or more intermediate elements or layers.

[0026] When describing the time relationship between two events using terms such as "after", "subsequently", "next", and "before" in various exemplary embodiments of the present disclosure, unless more restrictive terms such as "exactly", "immediately", or "directly" are used, other events may occur between the two events.

[0027] When describing various exemplary embodiments of the present disclosure, terms such as "first" and "second" may be used to describe various components. These terms are intended to distinguish the same or similar components from each other, rather than to limit the components. Therefore, throughout the application, unless otherwise specifically stated, within the technical concept of the present disclosure, the "first" component may be the same as the "second" component.

[0028] Those skilled in the art can fully understand that the features of various embodiments of the present disclosure can be partially or fully combined or combined with each other, and can operate differently from each other and be technically driven. The embodiments of the present disclosure can be executed independently of each other, or can be executed together in a mutually dependent relationship.

[0029] Figure 1 is a schematic plan view showing a light-emitting display device according to an embodiment of the present disclosure, Figure 2 is a circuit diagram of a sub-pixel showing an embodiment of the present disclosure.

[0030] Referring to Figure 1 and Figure 2 , a display device 1000 according to an embodiment of the present disclosure may include a display panel DP, wherein the display panel DP may include a substrate 100 and a driving unit connected to the substrate 100. The substrate 100 includes a display area AA and a non-display area NA surrounding the display area AA. The driving unit may be integrated into the substrate 100 and may be formed together with an array provided in the display area AA. The driving unit may be a chip-on-glass (COG) connected to the substrate 100, may be a chip-on-film (COF) connected to the substrate 100, or may be connected to a printed circuit board via a connector.

[0031] The display area AA is an image configured to display an image. A plurality of sub-pixels SP may be provided in the display area AA of the display panel DP, and an image may be displayed using the plurality of sub-pixels SP.

[0032] The display device 1000 may include a display panel DP and a housing (not shown) configured to accommodate the sides and the bottom of the display panel DP. The non-display area NA of the display panel DP may be hidden by the housing or covered by a separate printed film. A printed circuit film and / or a battery may be provided between the bottom of the display panel DP and the housing.

[0033] The area where the plurality of sub-pixels SP are provided may be the display area AA, and the area outside the display area AA may be the non-display area NA.

[0034] The non-display area NA can be an edge area surrounding the display area AA of the displayed image. At least one driving unit configured to drive a plurality of sub-pixels SP can be disposed in the non-display area NA. The driving unit can include a gate-in-panel (GIP). The gate-in-panel (GIP) can be connected to a plurality of gate lines GL in the display area AA, and can sequentially supply gate voltage signals to the plurality of gate lines GL.

[0035] Various additional elements configured to drive the sub-pixels SP in the display area AA can also be disposed in the non-display area NA.

[0036] At least one of the plurality of sub-pixels SP can include a first transistor T1, a second transistor T2, a storage capacitor Cst, a compensation circuit CC, and a light-emitting element ED, as Figure 2 shown.

[0037] In one example, the first transistor T1 can be a switching transistor, and the second transistor T2 can be a driving transistor.

[0038] The first electrode (e.g., drain electrode) of the first transistor T1 is electrically connected to the data line DL, and the second electrode (e.g., source electrode) of the first transistor T1 is electrically connected to the first node N1. The gate electrode of the first transistor T1 is electrically connected to the gate line GL. The first transistor T1 transmits the data signal provided via the data line DL to the first node N1 in response to a scan signal provided via the gate line GL.

[0039] The storage capacitor Cst is electrically connected to the first node N1 to charge the voltage applied to the first node N1.

[0040] The first electrode (e.g., drain electrode) of the second transistor T2 receives a high-potential driving voltage (EVDD), and the second electrode (e.g., source electrode) of the second transistor T2 is electrically connected to the first electrode (e.g., anode) of the light-emitting element ED. The second transistor T2 can control the amount of driving current flowing to the light-emitting element ED in response to the voltage applied to the gate electrode.

[0041] The semiconductor layer of the first transistor T1 and / or the second transistor T2 can include silicon such as amorphous silicon (a-Si), polycrystalline silicon (poly-Si), or low-temperature polycrystalline silicon (poly-Si); or oxides such as indium gallium zinc oxide (IGZO), but is not limited thereto. At least one of the first transistor T1 and the second transistor T2 can include an oxide semiconductor layer that can be formed at a lower temperature than other materials, can maintain an amorphous property, and can have a high mobility.

[0042] The light-emitting element ED outputs light corresponding to the driving current. The light-emitting element ED can output light corresponding to any one of red, green, blue, and white.

[0043] The light-emitting element ED may include an anode, a light-emitting layer provided on the anode, and a cathode supplied with a common voltage. The light-emitting layer may be configured to emit light of the same color, such as white light, in accordance with pixels, or may be configured to emit different colors, such as red light, green light, or blue light, in accordance with sub-pixels.

[0044] The light-emitting element ED can be a front-emitting diode or a back-emitting diode.

[0045] The compensation circuit CC may be provided in the sub-pixel SP to compensate for the threshold voltage of the second transistor T2. The compensation circuit CC may include one or more transistors. The compensation circuit CC may include one or more transistors and capacitors, and may be configured differently according to the compensation method. The sub-pixel including the compensation circuit CC may include various circuits having different numbers of transistors and / or capacitors, such as 3T1C, 4T2C, 5T2C, 6T1C, 6T2C, 7T1C, 7T2C.

[0046] In addition, the display panel DP may have a camera or a sensor provided in a part (region A) of the display area AA, as Figure 1 shown. The camera or the sensor may be provided on the bottom side of the substrate 100, or holes may be provided in the substrate 100 such that a part of the camera or the sensor is inserted into the holes in the substrate 100 from the bottom side of the substrate 100.

[0047] The sensor detects light. For example, according to the wavelength of the collected light, the sensor can be an infrared sensor or an ultraviolet sensor.

[0048] Figure 3 is Figure 1 an enlarged view of the region A of Figure 4 is Figure 3 a cross-sectional view taken along lines I-I' and II-II' of Figure 5 is a cross-sectional view showing Figure 3 the transmissive unit of

[0049] As Figure 3 shown, in order to sense an image or light from the top side of the substrate 100, the region where the camera or the sensor is located may include a transmissive unit TA.

[0050] In the following description, the region where no camera or sensor is provided and normal sub-pixels SP1, SP2, SP3 are provided is referred to as the first region BA, and the region where a camera or a sensor is provided is referred to as the second region SA.

[0051] In the light-emitting display device according to this embodiment of the present disclosure, a camera or a sensor is provided in a second region SA including sub-pixels SP1, SP2, and SP3, which is a part of the display region AA. However, in order to perform light sensing by the camera or the sensor, a transmissive unit TA is further provided in the second region SA. Accordingly, the second region SA may have a lower resolution due to a lower arrangement density of the sub-pixels SP1, SP2, and SP3 than that in the first region BA.

[0052] The adjacent sub-pixels SP1, SP2, and SP3 in the first region BA and the second region SA include light-emitting elements ED configured to emit different light-emitting colors, and each light-emitting element ED has a light-emitting unit EM1 or EM2 surrounded by a pixel defining film BNSP, as Figure 4 shown. In each of the sub-pixels SP1, SP2, and SP3, the light-emitting element ED is connected to a transistor TFT.

[0053] The first region BA includes sub-pixels SP1, SP2, and SP3 configured to emit different colors as one first pixel P1, and the first pixel P1 is provided in the first region BA at a first resolution. The second region SA includes sub-pixels SP1, SP2, and SP3 configured to emit different colors as one second pixel P2, and the second pixel P2 is provided in the second region SA together with the transmissive unit TA while having a second resolution lower than the first resolution.

[0054] Since the second pixel P2 is provided in the second region SA while having a lower resolution than the first pixel P1 in the first region BA, and no transistor is provided in the region occupied by the transmissive unit TA in the second region SA, the arrangement density of the transistors with respect to the area is lower than that in the first region BA. Accordingly, in order to have the same light-emitting characteristics as the first region BA, the transistor TFT in the second region SA may have a higher sensitivity than the transistor TFT in the first region BA. In this case, the mobility of the transistor TFT in the second region SA may be higher than the mobility of the transistor TFT in the first region BA. In one example, the materials of the semiconductor layers of the transistors in the first region BA and the second region SA may be different from each other so that the mobilities are different.

[0055] In addition, different mobility characteristics are also required between the multiple transistors provided in each sub-pixel of the first region BA and the second region SA. For example, in order to represent grayscale, the switching transistor has a higher mobility than the driving transistor because high-speed response is required.

[0056] The transistors are provided not only in the sub-pixels SP but also in the driving units in the non-display area NA, and the transistors provided in the non-display area NA may require a higher mobility than the driving transistors in the display area AA.

[0057] As Figure 3 and Figure 4 shown in, the light-emitting display device according to this embodiment of the present disclosure includes: a substrate 100 having a first area BA and a second area SA, a plurality of first light-emitting units EM1 provided in the first area BA, second light-emitting units EM2 and a transmissive unit TA provided separately from each other in the second area SA, and a pixel-defining film BNSP surrounding the plurality of first light-emitting units EM1 and the second light-emitting units EM2.

[0058] The transmissive unit TA in the second area SA may include a lens layer LS, and the lens layer LS includes a first refractive-index layer 325a and a second refractive-index layer 330a located on the first refractive-index layer 325a and having a higher refractive index than the first refractive-index layer 325a.

[0059] As Figure 4 and Figure 5 shown in, the lens layer LS may have a curved interface LIF between the first refractive-index layer 325a and the second refractive-index layer 330a, which can increase the light collection efficiency of the light incident on the substrate 100 from above. The curved interface LIF is located in a recess CV in which at least the planarization film PLN configured to protect the transistor TFT is removed. In one example, the curved interface LIF may be in the shape of a concave lens recessed toward the lower surface of the recess CV. The light incident on the substrate 100 from above may converge at the curved interface LIF and be collected by a camera or a sensor on the bottom side of the substrate 100 with improved light collection efficiency.

[0060] The curved interface LIF of the lens layer LS has a surface area larger than the surface area of the lower surface of the recess, which can increase the light collection efficiency of the camera or the sensor provided on the bottom side of the substrate 100.

[0061] The pixel-defining film BNSP may include a light-blocking pixel-defining film 320 and a light-transmissive pixel-defining film 325. The pixel-defining film BNSP may further include a spacer 330 provided on a part of the light-transmissive pixel-defining film 325 to prevent the deposition mask from contacting the light-blocking pixel-defining film 320 and / or the light-transmissive pixel-defining film 325 during the deposition process, thereby preventing dent defects and the like.

[0062] The light-blocking pixel-defining film 320 may include a black material, such as a black pigment or light-blocking particles, to prevent light from being incident on the peripheral area of the light-emitting unit from above.

[0063] The first refractive index layer 325a may be made of the same material as the transmissive pixel defining film 325 of the light emitting units EM1 and EM2 surrounding each sub-pixel in the first region BA and the second region SA. In the second region SA, the first refractive index layer 325a may extend from the transmissive unit TA to the transmissive pixel defining film 325 of the pixel defining film BNSP of the sub-pixels SP1, SP2, and SP3 in the second pixel P2 adjacent thereto. In this case, the first refractive index layer 325a may be integral with the transmissive pixel defining film 325.

[0064] The second refractive index layer 330a may be made of the same material as the spacer 330 in the same process. The second refractive index layer 330a may have a refractive index higher than that of the first refractive index layer 325a, so that refraction may occur at the curved interface LIF where the first refractive index layer 325a and the second refractive index layer 330a are in contact with each other, and the light may be concentrated on the bottom side of the substrate 100 through the curved shape of the curved interface LIF and thus emitted.

[0065] The light emitting element ED provided in each of the sub-pixels SP1, SP2, and SP3 in the first region BA and the second region SA includes an anode 310, an intermediate layer 340, and a cathode 350.

[0066] The light emitting element ED is connected to at least one transistor TFT.

[0067] In one example, the transistor TFT may include a semiconductor layer 270, a gate electrode 280, a first source-drain electrode 291, and a second source-drain electrode 292.

[0068] When the semiconductor layer 270 is made of, for example, an oxide semiconductor, a light shielding pattern 260 may be further provided therebelow to prevent the influence of bottom light.

[0069] In addition to the transistor TFT, each sub-pixel may further include a storage capacitor including a first storage electrode 220 and a second storage electrode 240 that overlap each other. At least one insulating film 230 may be provided between the first storage electrode 220 and the second storage electrode 240. Either the first storage electrode 220 or the second storage electrode 240 may be connected to either the first source-drain electrode 291 or the second source-drain electrode 292 of the transistor TFT.

[0070] Either the first source-drain electrode 291 or the second source-drain electrode 292 of the transistor TFT may be connected to the anode 310 of the light emitting element ED via a connection electrode 295.

[0071] The light-emitting display device according to this embodiment of the present disclosure includes one or more planarization films PLN (293, 300) provided between the light-emitting element ED and the transistor TFT, and the transmissive unit TA in the second region SA may include a recess CV in which one or more insulating films including the planarization film PLN are removed.

[0072] The pixel defining film BNSP is provided between the transmissive units TA, between the transmissive unit TA and the light-emitting unit EM2, and between adjacent light-emitting units EM1, EM2. In particular, the light-shielding pixel defining film 320 can prevent light from incident from above on various transistors TFT provided in the display area AA or the non-display area NA of the substrate 100, thereby preventing the transistors from being affected by external light. The light-shielding pixel defining film 320 can block light from above and prevent characteristic changes of the transistor TFT caused by the incidence of light.

[0073] In addition, in the light-emitting display device according to this embodiment of the present disclosure, in the area where the transmissive unit TA is located, the light-shielding pixel defining film 320 is provided on the side surface of the recess CV in which the planarization film PLN is removed, thereby preventing the thin film transistor made of an oxide semiconductor layer and having a high mobility among the various transistors provided in the display area AA or the non-display area NA of the substrate 100 from being affected by the laterally scattered light.

[0074] In the light-emitting display device according to this embodiment of the present disclosure, a recess CV is provided in the transmissive unit TA, and a lens layer LS defining a curved interface LIF is provided in the recess, thereby increasing the light collection efficiency of a camera or a sensor on the bottom side of the substrate 100. In addition, the light-shielding pixel defining film 320 is provided along the side surface surrounding the recess CV. By preventing the transmission of laterally scattered light around the transmissive unit TA through the light-shielding pixel defining film 320, the influence of external light on the transistor TFT in the light-emitting display device can be prevented. As a result, the operation of the transistor can be stabilized and deterioration can be prevented.

[0075] Even if the thickness of the light-shielding pixel defining film 320 on the side surface of the recess CV is small, the light-shielding pixel defining film 320 can effectively prevent the transmission of light to the side, thereby maintaining the light collection efficiency of the lens layer LS in the transmissive unit TA, thereby improving the sensing sensitivity of the camera or the sensor while preventing light loss at the transmissive unit.

[0076] Each of the first refractive index layer 325a and the light-transmissive pixel defining film 325 may have a refractive index of, for example, 1.4 to 1.6. In one example, each of the first refractive index layer 325a and the light-transmissive pixel defining film 325 may be made of a material such as a polyacrylic resin.

[0077] Each of the second refractive index layer 330a and the spacer 330 may have a refractive index of, for example, 1.8 to 2.2. In one example, each of the second refractive index layer 330a and the spacer 330 may be made of a material such as a polyimide resin.

[0078] In addition to the above examples, the materials of the first refractive index layer 325a and the second refractive index layer 330a may also be changed to other materials, as long as the refractive index difference between the first refractive index layer 325a and the second refractive index layer 330a is 0.2 or greater and the curved interface between them increases the light collection efficiency of the camera or sensor on the bottom side of the substrate 100.

[0079] Hereinafter, reference will be made to Figure 4 and Figure 5 to describe in detail the structure of the light-emitting display device of the present disclosure.

[0080] The substrate 100 may be made of a plastic material and thus be flexible. In one example, the substrate 100 may include a first organic film 110 and a second organic film 130 that overlap each other with an organic interlayer insulating film 120 therebetween. Each of the first organic film 110 and the second organic film 130 may include, for example, polyimide. In addition to polyimide, the first organic film 110 and the second organic film 130 may also include different organic films. In another example, the substrate 100 may include a flexible thin glass material.

[0081] One of the first organic film 110 and the second organic film 130 of the substrate 100 may be made of polyethylene terephthalate (PET), and the other may be made of polyimide. When the first organic film 110 and the second organic film 130 are made of different organic materials, the substrate 100 may include an adhesive film, such as a pressure-sensitive adhesive (PSA), disposed therebetween.

[0082] The substrate 100 is used to support and protect the components of the display device 1000 disposed thereon.

[0083] A plurality of stacked insulating films 210, 211, 230, 250, 251, 290 are provided in the display area AA and the non-display area NA of the substrate 100 such that the electrodes 280, 291, 292 constituting the transistor TFT can be insulated from each other. These insulating films may include a first insulating film 210, a second insulating film 211, a third insulating film 230, a fourth insulating film 250, a fifth insulating film 251, and a sixth insulating film 290.

[0084] The first insulating film 210 is disposed in the display area AA and the non-display area NA of the substrate 100. The first insulating film 210 may be referred to as a buffer film and may perform the same functions as buffer films known in the art. The first insulating film 210 may be disposed on the substrate 100 to protect the structures located on the substrate 100 from moisture permeating through the substrate 100 and to planarize the surface of the substrate 100.

[0085] The first insulating film 210 may extend to the edge of the substrate 100 to prevent moisture from permeating from the edge of the substrate 100. The first insulating film 210 may be composed of a single inorganic film or multiple alternately stacked inorganic films.

[0086] For example, the first insulating film 210 may include at least one of a silicon oxide film (SiOx), a silicon nitride film (SiNx), and a silicon oxynitride film (SiOxNy), or a multilayer film formed by stacking these inorganic films.

[0087] The second insulating film 211 may be disposed on the first insulating film 210. The second insulating film 211 may, for example, serve as a second buffer layer. In this case, a part of the transistor TFT may include a polysilicon semiconductor layer (not shown), and the second insulating film 211 may be located under the polysilicon semiconductor layer. The second insulating film 211 may include an inorganic film, such as a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a silicon oxynitride film (SiOxNy), or a multilayer film thereof. In some cases, the second insulating film 211 may be used as a gate insulating film of a transistor including a polysilicon semiconductor layer.

[0088] The first storage electrode 220 may be disposed on the second insulating film 211. The first storage electrode 220 may be made of a conductive metal material, specifically, the conductive metal material may include at least one of the following: aluminum-based metals, such as aluminum (Al) or aluminum alloy; silver-based metals, such as silver (Ag) or silver alloy; copper-based metals, such as copper (Cu) or copper alloy; molybdenum-based metals, such as molybdenum (Mo) or molybdenum alloy; chromium (Cr); tantalum (Ta); neodymium (Nd); and titanium (Ti). In some cases, when the driving unit or the switching transistor includes a polysilicon semiconductor layer, the first storage electrode 220 may include a doped polysilicon semiconductor layer.

[0089] The third insulating film 230 may be disposed on the second insulating film 211. The third insulating film 230 serves as an insulator between the first storage electrode 220 and the second storage electrode 240, and may also serve as an interlayer insulating film of a transistor including a polysilicon semiconductor layer.

[0090] The third insulating film 230 may include an inorganic material. The inorganic material may include, for example, a silicon nitride film (SiNx).

[0091] A second storage electrode 240 made of a conductive metal material may be formed on the third insulating film 230. Specifically, the conductive metal material may include at least one of the following: aluminum-based metals such as aluminum (Al) or aluminum alloy; silver-based metals such as silver (Ag) or silver alloy; copper-based metals such as copper (Cu) or copper alloy; molybdenum-based metals such as molybdenum (Mo) or molybdenum alloy; chromium (Cr); tantalum (Ta); neodymium (Nd); and titanium (Ti).

[0092] Each of the first storage electrode 220 and the second storage electrode 240 may be a single layer, or may have a structure in which a plurality of different metal materials are stacked.

[0093] A fourth insulating film 250 may be provided on the third insulating film 230. The fourth insulating film 250 may be located below the oxide semiconductor layer 270 and the light-shielding pattern 260 and may act as a buffer layer. The fourth insulating film 250 may be used to planarize the surface of the region where the transistor TFT including the oxide semiconductor layer 270 provided thereon is formed.

[0094] The fourth insulating film 250 may include an inorganic material. The inorganic material may include, for example, a silicon oxide film (SiOx) or a multilayer film formed by stacking inorganic films.

[0095] A light-shielding pattern 260 configured to prevent light from incident from below onto the oxide semiconductor layer 270 located thereon may be provided on the fourth insulating film 250.

[0096] The light-shielding pattern 260 may be made of a conductive material such as a metal. The light-shielding pattern 260 may be made of a single metal, or may be made of two or more metals or two or more metal alloys. In addition, the light-shielding pattern 260 may have a single-layer structure or a multilayer structure.

[0097] A fifth insulating film 251 may be provided on the fourth insulating film 250.

[0098] The fifth insulating film 251 may include an inorganic material. The inorganic material may include, for example, a silicon oxide film (SiOx) or a multilayer film formed by stacking inorganic films.

[0099] When each of the fourth insulating film 250 and the fifth insulating film 251 is made of a silicon oxide film, hydrogen particles are not emitted during the heat treatment process, thereby preventing a reduction in the reliability of the oxide semiconductor layer 270 adjacent to the fourth insulating film 250 and the fifth insulating film 251 due to hydrogen particles.

[0100] The oxide semiconductor layer 270 formed on the fifth insulating film 251 includes an oxide semiconductor material. The oxide semiconductor material may include a combination of at least one of zinc (Zn), indium (In), gallium (Ga), tin (Sn), and titanium (Ti) with oxygen. In some cases, a highly conductive metal such as iron (Fe) may be further included in the oxide semiconductor material to improve mobility.

[0101] More specifically, the oxide semiconductor material constituting the oxide semiconductor layer 270 may be, for example, zinc oxide (ZnO), zinc tin oxide (ZTO), zinc indium oxide (ZIO), indium oxide (InO), titanium oxide (TiO), indium gallium zinc oxide (IGZO), indium zinc tin oxide (IZTO), or iron indium zinc oxide (FIZO).

[0102] A gate insulating film 275 may be provided between the oxide semiconductor layer 270 and the gate electrode 280. As shown in the figure, the gate insulating film 275 may be formed to cover the top and sides of the oxide semiconductor layer 270, or may extend laterally to be formed in the entire display area AA and non-display area NA. In some cases, the gate insulating film 275 may be provided only between the channel region of the oxide semiconductor layer 270 and the gate electrode 280.

[0103] The gate insulating film 275 is made of an inorganic insulating material and may include, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer film formed by stacking inorganic films.

[0104] The undoped portion of the oxide semiconductor layer 270 that overlaps with the gate electrode 280 may serve as the channel of the oxide semiconductor layer 270. The doped regions of the oxide semiconductor layer 270 are formed using the gate electrode 280 as a mask. The doped regions of the oxide semiconductor layer 270 correspond to the regions located on each side of the gate electrode 280, and the doped regions of the oxide semiconductor layer 270 are connected to the first source-drain electrode 291 and the second source-drain electrode 292 that are separated from each other and may serve as conductive source-drain regions.

[0105] The gate electrode 280 may be made of a conductive metal material. Specifically, the conductive metal material may include at least one of the following: aluminum-based metals such as aluminum (Al) or aluminum alloy; silver-based metals such as silver (Ag) or silver alloy; copper-based metals such as copper (Cu) or copper alloy; molybdenum-based metals such as molybdenum (Mo) or molybdenum alloy; chromium (Cr); tantalum (Ta); neodymium (Nd); and titanium (Ti). The gate electrode 280 may have a multilayer film structure including at least two conductive metal materials.

[0106] The sixth insulating film 290 may be disposed on the gate electrode 280. The sixth insulating film 290 covers the top and sides of the gate electrode 280, such that the first source-drain electrode 291 and the second source-drain electrode 292 are insulated from the gate electrode 280.

[0107] The sixth insulating film 290 may be composed of a single inorganic film or multiple stacked inorganic films. At least one of a silicon oxide film (SiOx), a silicon nitride film (SiNx), and a silicon oxynitride film (SiOxNy) may be selected as the inorganic film.

[0108] The first source-drain electrode 291 and the second source-drain electrode 292 may be disposed on the sixth insulating film 290. The first source-drain electrode 291 and the second source-drain electrode 292 may be disposed separately from each other, with the gate electrode 280 therebetween. In this case, the first source-drain electrode 291 and the second source-drain electrode 292 and the gate electrode 280 may be disposed on different layers.

[0109] Each of the first source-drain electrode 291 and the second source-drain electrode 292 may be made of a conductive metal material. Specifically, the conductive metal material may include at least one of the following: aluminum-based metals such as aluminum (Al) or aluminum alloy; silver-based metals such as silver (Ag) or silver alloy; copper-based metals such as copper (Cu) or copper alloy; molybdenum-based metals such as molybdenum (Mo) or molybdenum alloy; chromium (Cr); tantalum (Ta); neodymium (Nd); and titanium (Ti). Each of the first source-drain electrode 291 and the second source-drain electrode 292 may have a multilayer film structure including at least two conductive metal materials.

[0110] The first source-drain electrode 291 and the second source-drain electrode 292 are connected to both sides of the channel region of the oxide semiconductor layer 270. The channel region of the oxide semiconductor layer 270 may be an undoped intrinsic region, which may be the region where carriers move when a voltage is applied to the transistor TFT.

[0111] Each of the first source-drain electrode 291 and the second source-drain electrode 292 may be directly connected to the oxide semiconductor layer 270 via a contact hole in the sixth insulating film 290.

[0112] The first source-drain electrode 291 may extend to overlap with the second storage electrode 240 and may be connected to the second storage electrode 240 through contact holes provided in the sixth insulating film 290, the fifth insulating film 251, and the fourth insulating film 250.

[0113] A first planarization film 293 configured to protect the transistor TFT and the storage capacitor may be disposed on the first source-drain electrode 291 and the second source-drain electrode 292.

[0114] A connection electrode 295 may be further provided on the first planarization film 293. The connection electrode 295 may be connected to the first source-drain electrode 291 via a contact hole in the first planarization film 293. The connection electrode 295 may be made of a conductive metal material, for example. Specifically, the conductive metal material may include at least one of the following: aluminum-based metals such as aluminum (Al) or aluminum alloy; silver-based metals such as silver (Ag) or silver alloy; copper-based metals such as copper (Cu) or copper alloy; molybdenum-based metals such as molybdenum (Mo) or molybdenum alloy; chromium (Cr); tantalum (Ta); neodymium (Nd); and titanium (Ti).

[0115] A second planarization film 300 may be further provided on the connection electrode 295. An anode 310 may be further provided on the second planarization film 300. The anode 310 may be connected to the connection electrode 295 via a contact hole in the second planarization film 300.

[0116] The anode 310 may include a reflective electrode, for example, and may be used to prevent light from incident on the transistor TFT below the light-emitting units EM1 and EM2. The anode 310 may include a structure in which a first transparent electrode, a reflective electrode, and a second transparent electrode are stacked, for example. The second transparent electrode as the uppermost electrode of the anode 310 may be a dielectric, which can reduce the barrier of hole injection at the interface with the intermediate layer 340. Here, each of the first transparent electrode and the second transparent electrode may be a transparent oxide electrode such as ITO or IZO. The reflective electrode may include silver, a silver alloy such as APC (Ag-Pd-Cu), aluminum, or aluminum alloy.

[0117] The first planarization film 293 and the second planarization film 300 are made of an organic material and may be functionally referred to as a planarization film PLN.

[0118] In some cases, the connection electrode 295 may be omitted and the planarization film PLN may be formed as a single layer. In this case, the first source-drain electrode 291 may be directly connected to the anode 310.

[0119] A recess CV provided in the planarization film PLN may be formed by a removal process of the planarization film PLN during the process of forming a contact hole for the connection between the anode and the connection electrode in the second planarization film 300.

[0120] A pixel defining film BNSP may be formed by sequentially stacking a light-shielding pixel defining film 320 and a light-transmitting pixel defining film 325 around the light-emitting units EM1 and EM2 of the anode 310. A part of the pixel defining film BNSP may further include a spacer 330.

[0121] When forming the light-shielding pixel defining film 320, the light-shielding pixel defining film 320 may be formed along the side surface of the recess CV where the planarization film PLN corresponding to the transmission unit TA is removed, so as to block the light directed to the side surface between the recess CV and its periphery. In order to improve the transmittance of the transmission unit TA, the light-shielding pixel defining film 320 is removed so that the light-shielding pixel defining film 320 does not correspond to the transmission unit TA.

[0122] The first refractive index layer 325a formed together with the light-transmitting pixel defining film 325 is made of a material such as a liquid polyacrylic resin and remains along the side wall of the recess CV and the lower part of the recess CV. Due to the surface tension of the liquid material, the surface of the first refractive index layer is concave, and the first refractive index layer is disposed in the recess CV and its periphery.

[0123] The spacer 330 is disposed in a part of the pixel defining film BNSP and is formed by liquefying an organic material having a refractive index higher than that of the first refractive index layer 325a. When the spacer 330 is formed on the light-transmitting pixel defining film 325, the material of the spacer 330 fills the concave surface of the first refractive index layer 325a in the recess CV and can be defined as the second refractive index layer 330a.

[0124] The first refractive index layer 325a and the second refractive index layer 330a together constitute the lens layer LS.

[0125] The light-emitting element ED includes an anode 310, an intermediate layer 340, and a cathode 350. The pixel defining film BNSP and the lens layer LS may be formed after forming the anode 310, and the intermediate layer 340 and the cathode 350 may be sequentially disposed on the light-emitting units EM1, EM2 of the anode 310, the pixel defining film BNSP, and the transmission unit TA.

[0126] The intermediate layer 340 may include a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer. The intermediate layer 340 may be formed in a tandem structure including a plurality of stacked bodies and charge generation layers disposed between the stacked bodies, and each stacked body includes a hole transport layer, a light-emitting layer, and an electron transport layer. The charge generation layer may include, for example, an n-type charge generation layer and a p-type charge generation layer.

[0127] The cathode 350 may be formed by thinning a transmission electrode such as ITO or IZO or a reflection-transmission electrode such as silver, silver alloy, magnesium, magnesium alloy, ytterbium (Yb), or ytterbium alloy. In another embodiment, the cathode 350 may be partially removed from the transmission unit TA or formed with a smaller thickness so as to improve the transmittance in the transmission unit TA.

[0128] A capping layer (not shown) may be further formed on the cathode 350 to protect the cathode 350 of the light-emitting element ED and improve the light-emitting efficiency in the upward direction.

[0129] A package layer structure 400 is provided on the cathode 350 to prevent moisture from penetrating into the internal components and protect the internal components from external air.

[0130] In one example, the package layer structure 400 may include a structure in which inorganic films 410, 430 and an organic film 420 are stacked. However, the present disclosure is not limited thereto, and the package layer structure 400 may include a package substrate such as glass. An adhesive layer may be further provided between the package substrate and the light-emitting element ED facing each other.

[0131] Different from the illustrated example, the recess CV is not limited to being provided only in the planarization film PLN. For example, not only the planarization film PLN corresponding to the transmissive unit TA may be removed, but also the sixth insulating film 290 therebelow may be further removed to form the recess CV. In this case, the light-shielding pixel defining film 320 is provided along the side surface of the recess CV, whereby the light-shielding pixel defining film 320 can be provided on the same layer as the oxide semiconductor layer 270, thereby more effectively preventing the lateral light scattering phenomenon from the transmissive unit TA to the adjacent region.

[0132] Hereinafter, a method of forming a lens layer in the recess will be described with reference to a process cross-sectional view.

[0133] Figures 6A to 6E It is a process cross-sectional view showing a method of manufacturing a light-emitting display device according to an embodiment of the present disclosure.

[0134] As Figure 6A shown, a first planarization film material and a second planarization film material are sequentially formed on the insulating film 200, and the second planarization film material and the first planarization film material in the region corresponding to the transmissive unit TA are removed to form a first planarization film 293 and a second planarization film 300 having a recess CV. The stacked first planarization film 293 and second planarization film 300 having the recess CV are herein referred to as the planarization film PLN.

[0135] Here, the recess CV is in the shape of a hole. Considering the space left by the light-shielding pixel defining film formed on the side surface of the recess CV with a smaller thickness, the recess CV is formed to be slightly wider than the transmissive unit TA. The recess CV can be formed in the same process as forming contact holes in the second planarization film 300 in the first region BA and the second region SA.

[0136] After forming the recess CV, anodes 310 of each of the sub-pixels SP1, SP2, SP3 in the first region BA and the second region SA are formed.

[0137] Subsequently, as Figure 6B shown, a light-shielding pixel-defining film material is coated, and a light-shielding pixel-defining film 320 is formed in a remaining area after removing the light-shielding pixel-defining film material from each of the light-emitting units EM1, EM2 and the transmissive unit TA of the sub-pixels SP1, SP2, SP3. Here, the light-shielding pixel-defining film 320 can be arranged to correspond to the side surface of the recess CV located in the transmissive unit TA to prevent light transmitted to the transmissive unit TA from being transmitted to the side surface of the recess.

[0138] After forming the light-shielding pixel-defining film 320, a firing process can be performed to evaporate the liquid components in the light-shielding pixel-defining film, thereby fixing its shape.

[0139] Subsequently, as Figure 6C shown, a light-transmissive pixel-defining film material is coated in a liquid state. The light-transmissive pixel-defining film material is a low-refractive-index material. Here, the coating thickness of the light-transmissive pixel-defining film material is less than the depth of the recess CV, and the liquid material remains with a smaller thickness due to the surface tension of the side surface and the bottom surface of the recess CV, and can have a concave surface recessed into the recess CV. The light-transmissive pixel-defining film material can be removed from the light-emitting units EM1, EM2, thereby forming a light-transmissive pixel-defining film 325 surrounding the light-emitting units EM1, EM2, and a first refractive-index layer 325a remaining with a smaller thickness on the side surface and the bottom surface of the recess CV of the transmissive unit TA. The curved surface of the first refractive-index layer 325a can be achieved by the difference in surface adhesion of the sixth insulating film 290 exposed on the side surface of the recess CV formed with the light-shielding pixel-defining film 320 and the bottom surface of the recess CV not formed with the light-shielding pixel-defining film 320.

[0140] The first refractive-index layer 325a can extend to overlap with the light-shielding pixel-defining film 320.

[0141] In some cases, the first refractive-index layer 325a can be patterned to have a curved surface by changing the thickness of a photosensitive film configured to pattern a shape. For example, in a region corresponding to the recess CV of the transmissive unit TA, the photosensitive film is left such that the photosensitive film gradually thickens from the center of the bottom of the recess CV to its side surface. Due to the change in the exposure amount caused by the thickness difference of the photosensitive film, the first refractive-index layer 325a can be left such that the thickness of the first refractive-index layer 325a gradually increases from the center of the bottom of the recess CV to its side surface in proportion to the thickness difference of the photosensitive film.

[0142] After forming the light-transmissive pixel-defining film 325 and the first refractive-index layer 325a, the liquid components such as solvents in the light-transmissive pixel-defining film material can be removed by a firing process to fix its shape.

[0143] Subsequently, as Figure 6D shown, a spacer material as a high refractive index material is coated in a liquid state to form a spacer 330 on a part of the light-transmitting pixel defining film 325. The spacer material may remain in the concave region of the concave portion CV, such that a second refractive index layer 330a is formed in a part of the concave portion CV.

[0144] After the spacer 330 and the second refractive index layer 330a are formed, they may undergo a firing process to evaporate the liquid components contained in the material and fix their shapes.

[0145] The light-shielding pixel defining film 320, the light-transmitting pixel defining film 325, and the spacer 330 may be collectively referred to as a pixel defining film BNSP. In the pixel defining film BNSP, the lens layer LS provided in the concave portion CV of the transmission unit TA may be an integral lens layer.

[0146] As Figure 6E shown, an intermediate layer 340 and a cathode 350 are formed on the surface including the pixel defining film BNSP and the lens layer LS.

[0147] The anode 310, the intermediate layer 340, and the cathode 350 constitute a light-emitting element ED.

[0148] An encapsulation layer structure 400 in which inorganic films 410, 430 and an organic film 420 are alternately provided may be formed on the light-emitting element ED and the lens layer LS. The encapsulation layer structure 400 is not limited thereto, and any one of the inorganic films 410, 430 or the organic film 420 may include a plurality of inorganic films or a plurality of organic films.

[0149] In addition, the inorganic films 410, 430 and the organic film 420 included in the encapsulation layer structure 400 are transparent insulating films. In addition, at least one of the inorganic films 410, 430 and the organic film 420 included in the encapsulation layer structure 400 may be used to reduce the step between the lens layer LS formed in the concave portion CV and its periphery.

[0150] The lens layer LS provided in the light-emitting display device of the present disclosure may be formed in the same process as the pixel defining film BNSP, and may have lenses with different refractive indices, whereby the light collection efficiency of a camera or a sensor located on the bottom side of the substrate can be increased without adding a separate process. Therefore, the light sensing sensitivity can be improved, and the reliability of the sensor and the camera can be increased.

[0151] Figure 7 is a cross-sectional view showing a light-emitting display device according to another embodiment of the present disclosure.

[0152] As Figure 7As shown in [the figure], a light-emitting display device according to another embodiment of the present disclosure is characterized in that the recess CV is formed not only in the planarization film PLN, but also in a part 290A of the insulating film 200 below the planarization film PLN.

[0153] As Figure 7 shown in [the figure], the light-shielding pixel defining film 320 is disposed along the side surface of the recess CV that is in the same layer as the oxide semiconductor layer 270 in the lateral direction, and can further block the lateral light transmission at the side surface of the recess CV, thereby effectively preventing the oxide semiconductor layer 270 from deteriorating due to light.

[0154] As Figure 7 shown in [the figure], in a light-emitting display device according to another embodiment of the present disclosure, the lens layer LS can be formed in the same process as the pixel defining film BNSP is formed, and the curved interface LIF of the lens layer LS formed in the recess CV can increase the efficiency of collecting light into the transmission unit TA and improve the light sensitivity of a camera or a sensor located on the bottom side of the substrate 100.

[0155] In a light-emitting display device according to an embodiment of the present disclosure, the oxide semiconductor layer 270 provided in the transistor TFT is more sensitive to light. Therefore, a light-shielding pattern 260 is provided below it to prevent the influence of external light. The anode 310 of the light-emitting element ED located above it includes a reflective electrode, thereby shielding the lower light and the upper light. The light-shielding pixel defining film 320 is disposed along the side surface of the recess CV of the transmission unit TA, thereby preventing light from scattering and incident laterally from the transmission unit TA with improved light collection efficiency. That is to say, not only can the external light incident on the light-sensitive oxide semiconductor layer 270 from above and below be blocked, but also the internal scattered light transmitted laterally from the transmission unit TA can be blocked, thereby effectively preventing defects of the oxide semiconductor layer 270 caused by light. In addition, even if the transistor does not include the oxide semiconductor layer 270, if the transistor is a light-sensitive transistor, the variability of the transistor caused by light can also be prevented and the reliability of the transistor can be improved by a structure capable of blocking the upper light, the lower light, and the lateral light incident on the transistor.

[0156] In addition, in a light-emitting display device according to an embodiment of the present disclosure, when the lens layer LS is disposed in the recess CV, it has the advantage of improving the light detection rate of a camera or a sensor on the bottom side of the substrate 100.

[0157] The lens layer LS may be formed in the recess CV of the insulating film provided to improve the transmittance of the transmissive unit TA, and the light-shielding pixel defining film may be provided on the side surface of the recess CV to prevent the light passing through the transmissive unit TA from being scattered laterally. In addition, for a transistor including an oxide semiconductor layer sensitive to the incidence of various lights, the light-shielding pixel defining film can not only prevent light from being transmitted from the top, but also prevent light from being transmitted laterally, thereby stabilizing the characteristics of the transistor and preventing the deterioration of the transistor.

[0158] For a transistor that requires a high mobility for a fast response speed in a second region where a transmissive unit is correspondingly provided with a sensor or a camera and the sub-pixels have a low resolution, the scattered light inside can be blocked by the light collection structure of the lens layer LS and the light-shielding structure of the light-shielding pixel defining film provided on the side surface of the recess. As a result, the transistor in the second region includes a high-mobility oxide semiconductor layer, without changing the structure of the transistor, preventing the deterioration of the high-mobility transistor and achieving stable high-brightness operation.

[0159] As a result, a high-mobility transistor required for low-resolution driving can be realized, and it is possible to apply a small-sized recess corresponding to a camera or a sensor and materials for various elements, which is more advantageous for ensuring a process margin.

[0160] In a light-emitting display device according to an embodiment of the present disclosure, a hole having a size corresponding to the recess is formed in the insulating film of the substrate to provide a camera or a sensor, and a lens layer is provided in the hole of the insulating film. Thus, based on the light collection efficiency of the lens layer, the light detection rate can be improved, and the power consumption required to drive the camera or the sensor can be reduced.

[0161] A light-emitting display device according to an embodiment of the present disclosure has the advantage that while a lens layer is provided in the hole of the insulating film to increase the light collection efficiency, a light-shielding pixel defining film is provided on the side surface of the hole in the insulating film, thereby reducing the size of the hole and the size of the camera or the sensor and reducing the weight of the light-emitting display device.

[0162] In a light-emitting display device according to an embodiment of the present disclosure, the lens layer can be formed when forming the pixel defining film without adding additional materials, thereby implementing a single material scheme.

[0163] In a light-emitting display device according to an embodiment of the present disclosure, the light-shielding pixel defining film provided on the side surface of the hole in the insulating film can prevent light from being transmitted from the camera or the sensor to its periphery, thereby preventing the change in the characteristics of the transistor caused by internal light scattering and improving the reliability of the high-mobility transistor.

[0164] In addition, in the light-emitting display device according to an embodiment of the present disclosure, through process optimization, the material addition process can be omitted, production energy can be reduced, and the generation of greenhouse gases that may be generated due to the manufacturing process can be reduced, thereby achieving ESG (Environmental, Social, Governance) goals.

[0165] In a recent light-emitting display device, a camera or a sensor is disposed in the display area AA instead of the non-display area NA so that the entire display area AA can be used for display. To this end, the camera or the sensor is disposed in an area overlapping the display area AA.

[0166] In addition, in the camera or the sensor, a recess CV is provided in the substrate 100 or in a plurality of insulating films on the substrate 100, a transmissive unit TA having a high light transmittance different from that of the light-emitting unit is applied, and the light transmittance in the transmissive unit TA is increased to collect light. In this case, the second area provided with the transmissive unit TA has a low-resolution sub-pixel arrangement, and the low-resolution second area requires a high mobility of transistors to compensate for the low sub-pixel arrangement density. The high-mobility transistors may be more sensitive to light. In addition to the need for light shielding of external light directly incident on the high-mobility transistors from above and below, light shielding is also required for internal scattered light obliquely incident on the high-mobility transistors or laterally transmitted from the transmissive unit.

[0167] A reflective anode or a light-shielding pixel defining film may be provided on the high-mobility transistors to shield the external light from above, and a light-shielding pattern may be provided on the lower side of at least the channel of the oxide semiconductor layer below to shield the external light from below. In the light-emitting display device according to an embodiment of the present disclosure, a light-shielding pixel defining film may be provided on the side surface of the recess where the insulating film is removed, thereby effectively blocking the light transmitted through the transmissive unit from laterally transmitting. In addition, the interface having a refractive index difference in the recess of the transmissive unit may have a concave surface to increase the light collection efficiency in the recess of the transmissive unit, thereby preventing light from radiating from the transmissive unit and improving the light reception sensitivity of the camera or the sensor.

[0168] The camera or the sensor may emit or radiate infrared light or ultraviolet light. The light-emitting display device of the present disclosure has the following advantages: a light-shielding pixel defining film is provided on the lens layer and the side surface of the recess corresponding to the recess, so that the light incident on the substrate from above and the light emitted by the camera or the sensor on the bottom side of the substrate directly pass through the recess in the transmissive unit, thereby increasing the light collection efficiency.

[0169] Therefore, in the light-emitting display device according to an embodiment of the present disclosure, the sensing sensitivity of the camera or the sensor and the reliability of the high-mobility transistors around the transmissive unit can be improved simultaneously.

[0170] A light-emitting display device according to an embodiment of the present disclosure may include: a substrate having a first region and a second region; a plurality of first light-emitting units disposed in the first region; a second light-emitting unit and a transmissive unit disposed in the second region, the second light-emitting unit and the transmissive unit being separated from each other; a pixel defining film disposed to surround the plurality of first light-emitting units and the second light-emitting unit; and a lens layer disposed in the transmissive unit, the lens layer including a first refractive index layer and a second refractive index layer located on the first refractive index layer and having a higher refractive index than the first refractive index layer, the lens layer having a curved interface disposed between the first refractive index layer and the second refractive index layer.

[0171] In a light-emitting display device according to an embodiment of the present disclosure, the first refractive index layer may extend to the pixel defining film.

[0172] In a light-emitting display device according to an embodiment of the present disclosure, the pixel defining film may include a light-blocking pixel defining film and a light-transmissive pixel defining film, and the first refractive index layer and the light-transmissive pixel defining film may be located in the same layer.

[0173] In a light-emitting display device according to an embodiment of the present disclosure, the pixel defining film may include a light-blocking pixel defining film and a light-transmissive pixel defining film, and the first refractive index layer may include the same material as the light-transmissive pixel defining film.

[0174] In a light-emitting display device according to an embodiment of the present disclosure, a spacer may be disposed on a part of the light-transmissive pixel defining film, and the second refractive index layer may include the same material as the spacer.

[0175] In a light-emitting display device according to an embodiment of the present disclosure, each of the plurality of first light-emitting units and the second light-emitting unit may include: a light-emitting element including an anode, an intermediate layer, and a cathode; a transistor connected to the light-emitting element; and a planarization film disposed between the light-emitting element and the transistor, and the transmissive unit may include a recess formed in the planarization film.

[0176] In a light-emitting display device according to an embodiment of the present disclosure, an insulating film may be disposed under the planarization film, and the recess may be further formed in the insulating film.

[0177] In a light-emitting display device according to an embodiment of the present disclosure, the curved interface of the lens layer may be shaped to be recessed toward the lower surface of the recess.

[0178] In a light-emitting display device according to an embodiment of the present disclosure, the transistor may include an oxide semiconductor layer.

[0179] A light-emitting display device according to an embodiment of the present disclosure may further include: an encapsulation layer structure configured to cover the cathode. The encapsulation layer structure may include a plurality of transparent insulating films, and at least one of the plurality of transparent insulating films of the encapsulation layer structure may flatten the recess.

[0180] In a light-emitting display device according to an embodiment of the present disclosure, the curved interface of the lens layer may be disposed in the recess.

[0181] In a light-emitting display device according to an embodiment of the present disclosure, the pixel defining film includes a light-blocking pixel defining film and a light-transmitting pixel defining film, and the light-blocking pixel defining film may be disposed along a side surface of the recess.

[0182] In a light-emitting display device according to an embodiment of the present disclosure, the light-blocking pixel defining film disposed on the side surface of the recess may block light between the lens layer and the transistor.

[0183] In a light-emitting display device according to an embodiment of the present disclosure, the curved interface of the lens layer may have a surface area larger than a surface area of a lower surface of the recess.

[0184] In a light-emitting display device according to an embodiment of the present disclosure, a spacer may be disposed on a part of the light-transmitting pixel defining film, and the second refractive index layer may include the same material as the spacer.

[0185] In a light-emitting display device according to an embodiment of the present disclosure, the first refractive index layer and the light-transmitting pixel defining film may be integral, and the second refractive index layer may be separated from the spacer.

[0186] In a light-emitting display device according to an embodiment of the present disclosure, the refractive index of the second refractive index layer may be 0.2 to 0.8 greater than the refractive index of the first refractive index layer.

[0187] In a light-emitting display device according to an embodiment of the present disclosure, the arrangement density of the first light-emitting units in the first region may be greater than the arrangement density of the second light-emitting units in the second region.

[0188] In a light-emitting display device according to an embodiment of the present disclosure, at least one of a camera, an infrared sensor, and a ultraviolet sensor may be disposed in the second region of the substrate.

[0189] A light-emitting display device according to an embodiment of the present disclosure may include: a substrate including a display area and a non-display area surrounding the display area; a plurality of sub-pixels emitting light disposed in the display area and a transmissive unit located between the sub-pixels; and a sensor unit corresponding to the transmissive unit, wherein: a recess in which at least one insulating film on the substrate is removed may be provided in the transmissive unit, and a lens layer may be provided in the recess such that light incident on the substrate from above is converged by the lens layer and collected by the sensor unit.

[0190] In a light-emitting display device according to an embodiment of the present disclosure, a light-shielding film may be provided on a side surface of the recess.

[0191] It is obvious from the above description that the light-emitting display device according to an embodiment of the present disclosure has the following effects.

[0192] In a light-emitting display device according to an embodiment of the present disclosure, a recess is provided in a region of the substrate corresponding to a sensor and / or a camera, and a lens layer structure is applied to the recess. The lens layer structure has a curved interface where a low refractive index layer and a high refractive index layer are in contact with each other. Thus, the light detection rate of light incident on the sensor and / or the camera from above the substrate can be improved by the light collection effect of the lens layer.

[0193] In a light-emitting display device according to an embodiment of the present disclosure, the surface area of the curved interface of the lens layer structure where the low refractive index layer and the high refractive index layer are in contact with each other is larger than the planar area of the recess. Thus, even if the planar size of the recess to which the lens layer structure is applied is reduced, higher sensing sensitivity can be obtained due to the light collection effect caused by the lens layer structure and the increased surface area caused by the curved interface.

[0194] In a light-emitting display device according to an embodiment of the present disclosure, a hole having a size corresponding to the recess is formed in the insulating film of the substrate to provide a camera or a sensor, and a lens layer is provided in the hole of the insulating film. Thus, based on the light collection efficiency of the lens layer, the light detection rate can be improved, and the power consumption required to drive the camera or the sensor can be reduced.

[0195] The light-emitting display device according to an embodiment of the present disclosure has the advantage that while a lens layer is provided in the hole of the insulating film to increase the light collection efficiency, a light-shielding pixel defining film is provided on a side surface of the hole in the insulating film, thereby reducing the size of the hole and the size of the camera or the sensor and reducing the weight of the light-emitting display device.

[0196] In a light-emitting display device according to an embodiment of the present disclosure, the lens layer may be formed when forming the pixel defining film without adding additional materials, thereby implementing a single material solution.

[0197] In a light-emitting display device according to an embodiment of the present disclosure, a light-shielding pixel defining film provided on the side surface of a hole formed in an insulating film can prevent light from being transmitted from a camera or a sensor to its periphery, thereby preventing characteristic changes of transistors due to internal light scattering and improving the reliability of high-mobility transistors.

[0198] In addition, in a light-emitting display device according to an embodiment of the present disclosure, by optimizing the process, a material addition process can be omitted, production energy can be reduced, and generation of greenhouse gases that may be generated due to the manufacturing process can be reduced, thereby achieving ESG (environment / society / governance) goals.

[0199] Those skilled in the art will understand that various modifications and substitutions are possible based on the above description without departing from the technical idea of the present disclosure. Therefore, the technical scope of the present disclosure is defined by the appended claims rather than by the detailed description of the present disclosure.

Claims

1. A light-emitting display device, comprising: a substrate having a first region and a second region; a plurality of first light-emitting units disposed in the first region; a second light-emitting unit and a transmissive unit disposed in the second region, the second light-emitting unit and the transmissive unit being separated from each other; a pixel defining film disposed to surround the plurality of first light-emitting units and the second light-emitting unit; and a lens layer disposed in the transmissive unit, the lens layer including a first refractive index layer and a second refractive index layer located on the first refractive index layer and having a higher refractive index than the first refractive index layer, the lens layer having a curved interface disposed between the first refractive index layer and the second refractive index layer.

2. The light-emitting display device according to claim 1, wherein the first refractive index layer extends to overlap with the pixel defining film.

3. The light-emitting display device according to claim 1, wherein: the pixel defining film includes a light-shielding pixel defining film and a light-transmissive pixel defining film, and the first refractive index layer and the light-transmissive pixel defining film are located in the same layer.

4. The light-emitting display device according to claim 1, wherein: the pixel defining film includes a light-shielding pixel defining film and a light-transmissive pixel defining film, and the first refractive index layer includes the same material as the light-transmissive pixel defining film.

5. The light-emitting display device according to claim 4, wherein: a spacer is disposed on a part of the light-transmissive pixel defining film, and the second refractive index layer includes the same material as the spacer.

6. The light-emitting display device according to claim 1, wherein: each of the plurality of first light-emitting units and the second light-emitting unit includes: a light-emitting element including an anode, an intermediate layer, and a cathode; a transistor connected to the light-emitting element; and a planarization film disposed between the light-emitting element and the transistor, and the transmissive unit includes a recess in the planarization film.

7. The light-emitting display device according to claim 6, wherein an insulating film is disposed under the planarization film, and the recess is further disposed in the insulating film.

8. The light-emitting display device according to claim 6, wherein the curved interface of the lens layer is recessed toward the lower surface of the recess.

9. The light-emitting display device according to claim 6, wherein the transistor includes an oxide semiconductor layer.

10. The light-emitting display device according to claim 6, further comprising: a package layer structure configured to cover the cathode, wherein: the package layer structure includes a plurality of transparent insulating films, and at least one of the plurality of transparent insulating films of the package layer structure flattens the recess.

11. The light-emitting display device according to claim 6, wherein the curved interface of the lens layer is disposed in the recess.

12. The light-emitting display device according to claim 6, wherein the pixel defining film includes a light-shielding pixel defining film and a light-transmissive pixel defining film, and the light-shielding pixel defining film is disposed along the side surface of the recess.

13. The light-emitting display device according to claim 12, wherein the light-shielding pixel defining film provided on the side surface of the recess shields light between the lens layer and the transistor.

14. The light-emitting display device according to claim 6, wherein the curved interface of the lens layer has a surface area larger than the surface area of the lower surface of the recess.

15. The light-emitting display device according to claim 3, wherein: a spacer is provided on a part of the light-transmitting pixel defining film, and the second refractive index layer includes the same material as the spacer.

16. The light-emitting display device according to claim 15, wherein: the first refractive index layer is integral with the light-transmitting pixel defining film, and the second refractive index layer is separated from the spacer.

17. The light-emitting display device according to claim 1, wherein the refractive index of the second refractive index layer is 0.2 to 0.8 greater than the refractive index of the first refractive index layer.

18. The light-emitting display device according to claim 1, wherein the arrangement density of the first light-emitting units in the first region is greater than the arrangement density of the second light-emitting units in the second region.

19. The light-emitting display device according to claim 1, wherein at least one of a camera, an infrared sensor, and a ultraviolet sensor is provided in the second region of the substrate.

20. A light-emitting display device, comprising: a substrate including a display area and a non-display area adjacent to the display area; a plurality of sub-pixels that emit light provided in the display area and a transmission unit located between the plurality of sub-pixels; a sensor unit provided corresponding to the transmission unit; a recess provided in the transmission unit; and a lens layer provided in the recess corresponding to the sensor unit.

21. The light-emitting display device according to claim 20, further comprising a light-shielding film on the side surface of the recess.

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