Waterproof and fog-proof glass and preparation method thereof

Abstract

The invention discloses water mist-proof glass and a preparation method thereof. The method comprises the following steps: cleaning the surface of a glass body; depositing a silicon layer on the surface of the cleaned glass body; depositing a carbon transition layer on the surface of the silicon layer; depositing a composite layer on the surface of the carbon transition layer; and doping fluorine ions on the surface of the composite layer to form a fluorine-containing layer. By adopting the technical scheme provided by the invention, the water mist prevention glass with relatively strong hydrophobic performance can be generated, so that accumulated water on the surface of the glass is evacuated as soon as possible, and the use requirements of users are met.

Description

Technical Field

[0001] The present invention relates to the technical field of glass, and particularly to a waterproof fog glass and a preparation method thereof. Background Art

[0002] When a car is running in rainy days, there will be a lot of rainwater on its outer surface. For the front windshield, windshield wipers are usually used for cleaning. However, there are no windshield wipers on the window glass and rearview mirror, and the rainwater will still adhere to the outer surface of the glass, which requires the outer surface of the glass to be able to smoothly drain the accumulated water. Summary of the Invention

[0003] The purpose of the embodiments of the present invention is to provide a waterproof fog glass and a preparation method thereof, which can generate a waterproof fog glass with strong hydrophobic performance, so that the accumulated water on the glass surface can be evacuated as soon as possible, thereby meeting the user's usage requirements.

[0004] To achieve the above purpose, the embodiments of the present invention provide a preparation method of a waterproof fog glass, including:

[0005] Cleaning the surface of the glass body;

[0006] Depositing a silicon layer on the surface of the cleaned glass body;

[0007] Depositing a carbon transition layer on the surface of the silicon layer;

[0008] Depositing a composite layer on the surface of the carbon transition layer;

[0009] Doping fluoride ions on the surface of the composite layer to form a fluorine-containing layer.

[0010] Further, the depositing a silicon layer on the surface of the cleaned glass body specifically includes:

[0011] Under preset first deposition conditions, using a magnetron sputtering ion plating method, depositing a silicon layer on the surface of the cleaned glass body by sputtering a silicon target; wherein, the first deposition conditions include: the argon gas flow rate is 150-180 sccm, the vacuum degree is 2.0×10 -1 Pa, the ion source power is 2.0-2.5 kW, the negative bias voltage is 90-110 V, the sputtering target power is 1.5-2.0 kW, and the deposition time is 10-15 min.

[0012] Further, the thickness of the silicon layer is 25 nm.

[0013] Further, the depositing a carbon transition layer on the surface of the silicon layer specifically includes:

[0014] Under the preset second deposition conditions, a carbon transition layer is deposited on the surface of the silicon layer by using magnetron sputtering ion plating method through sputtering a carbon target; wherein, the second deposition conditions include: the temperature is 25 - 30 °C, the vacuum degree is above 2.0×10 -3 Pa, the air pressure after introducing argon is 1.0 - 1.5 Pa, the negative bias voltage is 150 V, the bias frequency is 150 kHz, and the carbon target current is 1.0 - 1.5 A.

[0015] Furthermore, the thickness of the carbon transition layer is 20 nm.

[0016] Furthermore, depositing a composite layer on the surface of the carbon transition layer specifically includes:

[0017] Under the preset third deposition conditions, by using magnetron sputtering ion plating method, first co-sputter through a titanium target and a carbon target, and then deposit a composite layer on the surface of the carbon transition layer by sputtering the carbon target alone; wherein, the third deposition conditions include: the vacuum degree is above 1.8×10 -3 Pa, the air pressure after introducing nitrogen is 0.2 Pa, the negative bias voltage is 150 V, the bias frequency is 120 kHz, the titanium target current is 0.5 A, the carbon target current is 2.5 A, the co-sputtering time of the titanium target and the carbon target is 20 min, and the single sputtering time of the carbon target is 15 min.

[0018] Furthermore, the thickness of the composite layer is 10 - 15 nm.

[0019] Furthermore, doping fluoride ions on the surface of the composite layer to form a fluorine-containing layer specifically includes:

[0020] Under the preset doping conditions, using carbon tetrafluoride as the doping gas, doping fluoride ions on the surface of the composite layer with zero bias voltage to form a fluorine-containing layer on the surface of the composite layer; wherein, the doping conditions include: the carbon tetrafluoride flow rate is 100 sccm, the ion energy is 400 eV, the ion beam density is 100 μA / cm 2 and the vacuum degree is 3.5×10 -4 Pa, the doping time is 20 min, and the deposition rate of fluoride ions is

[0022] Furthermore, the thickness of the fluorine-containing layer is 5 nm.

[0023] To achieve the above object, an embodiment of the present invention further provides a waterproof fog glass, which is obtained by using the preparation method of the waterproof fog glass described in any one of the above, and the waterproof fog glass includes:

[0024] A glass body;

[0025] A silicon layer formed on the surface of the glass body;

[0026] A carbon transition layer formed on the surface of the silicon layer;

[0027] A composite layer formed on the surface of the carbon transition layer; and,

[0028] A fluorine-containing layer formed on the surface of the composite layer.

[0029] Compared with the prior art, the embodiment of the present invention provides a waterproof fog glass and a preparation method thereof. First, the surface of the glass body is cleaned; then, a silicon layer is deposited on the surface of the cleaned glass body; then, a carbon transition layer is deposited on the surface of the silicon layer; then, a composite layer is deposited on the surface of the carbon transition layer; finally, fluorine ions are doped on the surface of the composite layer to form a fluorine-containing layer, and a waterproof fog glass is correspondingly obtained. The embodiment of the present invention can generate a waterproof fog glass with strong hydrophobic performance, so that the accumulated water on the glass surface is evacuated as soon as possible, thereby meeting the user's usage requirements. Brief Description of the Drawings

[0030] Figure 1 is a flowchart of a preferred embodiment of a method for preparing a waterproof fog glass provided by the present invention;

[0031] Figure 2 is a schematic cross-sectional structure diagram of a preferred embodiment of a waterproof fog glass provided by the present invention. Detailed Description of the Embodiments

[0032] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art in the technical field of the present invention without creative efforts belong to the protection scope of the present invention.

[0033] The embodiment of the present invention provides a method for preparing a waterproof fog glass. Refer to Figure 1 As shown, it is a flowchart of a preferred embodiment of a method for preparing a waterproof fog glass provided by the present invention. The method includes steps S11 to S15:

[0034] Step S11, cleaning the surface of the glass body;

[0035] Step S12, depositing a silicon layer on the surface of the cleaned glass body;

[0036] Step S'13, depositing a carbon transition layer on the surface of the silicon layer;

[0037] Step S14: Deposit a composite layer on the surface of the carbon transition layer;

[0038] Step S15: Dope fluoride ions on the surface of the composite layer to form a fluorine-containing layer.

[0039] In specific implementation, first, clean the surface of the glass body; then, deposit a silicon (Si) coating on the surface of the cleaned glass body, and accordingly form a silicon layer on the surface of the processed glass body; then, deposit and form a carbon (C) transition layer on the surface of the silicon layer; then, deposit and form a composite layer on the surface of the carbon transition layer; finally, dope fluorine (F) ions on the surface of the composite layer, and accordingly form a fluorine-containing layer on the surface of the composite layer, and finally obtain a waterproof and anti-fog glass.

[0040] It should be noted that by doping fluoride ions on the surface of the composite layer, the hydrophobic and oleophobic properties of the protective film on the surface of the waterproof and anti-fog glass can be improved.

[0041] In one optional embodiment, the depositing the silicon layer on the surface of the cleaned glass body specifically includes:

[0042] Under preset first deposition conditions, use the magnetron sputtering ion plating method to deposit and form a silicon layer on the surface of the cleaned glass body by sputtering a silicon target; wherein, the first deposition conditions include: the argon gas flow rate is 150 - 180 sccm, the vacuum degree is 2.0×10 -1 Pa, the ion source power is 2.0 - 2.5 kW, the negative bias voltage is 90 - 110 V, the sputtering target power is 1.5 - 2.0 kW, and the deposition time is 10 - 15 min.

[0043] Specifically, in combination with the above embodiments, when depositing a silicon layer on the surface of the cleaned glass body, the magnetron sputtering ion plating method can be used to deposit by sputtering a silicon target to form a silicon layer on the surface of the processed glass body, and the first deposition conditions corresponding to the silicon layer are as follows: the flow rate of argon (Ar) introduced into the vacuum chamber is in the range of 150 sccm - 180 sccm, the vacuum degree in the vacuum chamber is 2.0×10 -1 Pa, the ion source power is in the range of 2.0 kW - 2.5 kW, the negative bias voltage applied to the workpiece is in the range of 90 V - 110 V, turn on the sputtering target (i.e., the silicon target), the sputtering target power is in the range of 1.5 kW - 2.0 kW, and the deposition time is in the range of 10 minutes - 15 minutes.

[0044] Exemplarily, the value of the argon gas flow rate can be 150 sccm, 151 sccm, 153 sccm, 155 sccm, 156 sccm, 158 sccm, 160 sccm, 162 sccm, 164 sccm, 165 sccm, 166 sccm, 167 sccm, 169 sccm, 170 sccm, 171 sccm, 173 sccm, 175 sccm, 178 sccm or 180 sccm, and can also be set according to actual requirements. The embodiments of the present invention do not make specific limitations.

[0045] Exemplarily, the value of the ion source power can be 2.0 kW, 2.1 kW, 2.2 kW, 2.3 kW, 2.4 kW or 2.5 kW, and can also be set according to actual requirements. The embodiments of the present invention do not make specific limitations.

[0046] Exemplarily, the value of the negative bias voltage can be 90 V, 91 V, 92 V, 93 V, 94 V, 95 V, 96 V, 97 V, 98 V, 99 V, 100 V, 101 V, 102 V, 103 V, 104 V, 105 V, 106 V, 107 V, 108 V, 109 V or 110 V, and can also be set according to actual requirements. The embodiments of the present invention do not make specific limitations.

[0047] Exemplarily, the value of the sputtering target power can be 1.5 kW, 1.6 kW, 1.7 kW, 1.8 kW, 1.9 kW or 2.0 kW, and can also be set according to actual requirements. The embodiments of the present invention do not make specific limitations.

[0048] Exemplarily, the value of the deposition time can be 10 minutes, 11 minutes, 12 minutes, 13 minutes, 14 minutes or 15 minutes, and can also be set according to actual requirements. The embodiments of the present invention do not make specific limitations.

[0049] In one optional embodiment, the thickness of the silicon layer is 25 nm.

[0050] Specifically, in combination with the above embodiments, by adopting the first deposition conditions in the above embodiments, the thickness of the silicon layer deposited on the surface of the cleaned glass body is about 25 nanometers.

[0051] In one optional embodiment, depositing a carbon transition layer on the surface of the silicon layer specifically includes:

[0052] Under preset second deposition conditions, using a magnetron sputtering ion plating method, a carbon transition layer is deposited on the surface of the silicon layer by sputtering a carbon target; wherein, the second deposition conditions include: the temperature is 25 - 30 °C, and the vacuum degree is 2.0×10 -3Above Pa, the air pressure after introducing argon is 1.0 - 1.5 Pa, the negative bias voltage is 150 V, the bias frequency is 150 kHz, and the carbon target current is 1.0 - 1.5 A.

[0053] Specifically, in combination with the above embodiments, when depositing a carbon transition layer on the surface of the silicon layer, a magnetron sputtering ion plating method can be used to deposit by sputtering a carbon target to form a carbon transition layer on the surface of the silicon layer, and the second deposition conditions corresponding to the carbon transition layer are as follows: Keep the temperature in the vacuum chamber within the range of 25°C to 30°C, evacuate the vacuum chamber to evacuate the vacuum chamber to a vacuum degree of 2.0×10 -3 Above Pa, then introduce argon (Ar with a purity of 99.99%) into the vacuum chamber, and control the air pressure in the vacuum chamber within the range of 1.0 Pa to 1.5 Pa, apply a negative bias voltage of 150 V to the workpiece, the bias frequency is 150 kHz, and the carbon target current is within the range of 1.0 A to 1.5 A.

[0054] Exemplarily, the value of the temperature in the vacuum chamber can be 25°C, 26°C, 27°C, 28°C, 29°C or 30°C, and can also be set according to actual needs, and the embodiments of the present invention do not make specific limitations.

[0055] Exemplarily, the value of the air pressure after introducing argon can be 1.0 Pa, 1.1 Pa, 1.2 Pa, 1.3 Pa, 1.4 Pa or 1.5 Pa, and can also be set according to actual needs, and the embodiments of the present invention do not make specific limitations.

[0056] Exemplarily, the value of the carbon target current can be 1.0 A, 1.1 A, 1.2 A, 1.3 A, 1.4 A or 1.5 A, and can also be set according to actual needs, and the embodiments of the present invention do not make specific limitations.

[0057] In one optional embodiment, the thickness of the carbon transition layer is 20 nm.

[0058] Specifically, in combination with the above embodiments, by adopting the second deposition conditions in the above embodiments, the thickness of the carbon transition layer deposited on the surface of the silicon layer is about 20 nanometers.

[0059] In one optional embodiment, depositing a composite layer on the surface of the carbon transition layer specifically includes:

[0060] Under preset third deposition conditions, using a magnetron sputtering ion plating method, first co-sputter through a titanium target and a carbon target, and then deposit a composite layer on the surface of the carbon transition layer by sputtering the carbon target alone; wherein, the third deposition conditions include: the vacuum degree is 1.8×10 -3Above 1.8 Pa, the air pressure after introducing nitrogen is 0.2 Pa, the negative bias voltage is 150 V, the bias frequency is 120 kHz, the titanium target current is 0.5 A, the carbon target current is 2.5 A, the co-sputtering time of the titanium target and the carbon target is 20 min, and the single-sputtering time of the carbon target is 15 min.

[0061] Specifically, in combination with the above embodiments, when depositing the composite layer on the surface of the carbon transition layer, the magnetron sputtering ion plating method can be used. First, deposit by co-sputtering the titanium (Ti) target and the carbon target, and then deposit by single-sputtering the carbon target to form a Ti / DLC composite layer on the surface of the carbon transition layer. And the third deposition conditions corresponding to the Ti / DLC composite layer are as follows: evacuate the vacuum chamber to a vacuum degree of above 1.8×10 -3 Pa, then introduce nitrogen (N2 with a purity of 99.99%) into the vacuum chamber, control the air pressure in the vacuum chamber at 0.2 Pa, apply a negative bias voltage of 150 V to the workpiece, the bias frequency is 120 kHz, first co-sputter the titanium target and the carbon target for 20 minutes, the titanium target current is 0.5 A, the carbon target current is 2.5 A, and then turn off the titanium target and single-sputter the carbon target for 15 minutes.

[0062] In one optional embodiment, the thickness of the composite layer is 10 - 15 nm.

[0063] Specifically, in combination with the above embodiments, by adopting the third deposition conditions in the above embodiments, the thickness of the Ti / DLC composite layer deposited on the surface of the carbon transition layer is about 10 nanometers to 15 nanometers.

[0064] Exemplarily, the value of the thickness of the Ti / DLC composite layer can be 10 nanometers, 11 nanometers, 12 nanometers, 13 nanometers, 14 nanometers or 15 nanometers, and can also be set according to actual needs, and the embodiments of the present invention do not make specific limitations.

[0065] In one optional embodiment, doping fluoride ions on the surface of the composite layer to form a fluorine-containing layer specifically includes:

[0066] Under preset doping conditions, using carbon tetrafluoride as the doping gas, doping fluoride ions on the surface of the composite layer with zero bias voltage to form a fluorine-containing layer on the surface of the composite layer; wherein, the doping conditions include: the carbon tetrafluoride flow rate is 100 sccm, the ion energy is 400 eV, the ion beam density is 100 μA / cm 2 , the vacuum degree is 3.5×10 -4 Pa, the doping time is 20 min, and the deposition rate of fluoride ions is

[0067] Specifically, in combination with the above embodiments, when doping fluoride ions on the surface of the Ti / DLC composite layer, carbon tetrafluoride (CF4) can be selected as the doping gas to dope fluoride ions on the surface of the Ti / DLC composite layer (at the interface of the DLC coating). At the same time, in order to avoid the etching of the DLC coating by fluoride ions, zero-bias doping of fluoride ions can be selected to form a fluorine-containing layer on the surface of the Ti / DLC composite layer, and the doping conditions corresponding to the fluorine-containing layer are as follows: the flow rate of carbon tetrafluoride is 100 sccm, the ion energy is 400 eV, and the ion beam density is 100 μA / cm 2 , the vacuum degree in the vacuum chamber is 3.5×10 -4 Pa, the doping time is 20 minutes, and the deposition rate of fluoride ions is within range.

[0068] Exemplarily, the value of the deposition rate of fluoride ions can be or It can also be set according to actual needs, and the embodiments of the present invention do not make specific limitations.

[0069] It should be noted that the DLC coating and the fluorine-containing layer have a low surface energy aggregation, so they can be combined more firmly. At the same time, fluoride ions have strong hydrophobic properties, which can make the water droplets on the surface of the anti-fog glass disperse as soon as possible.

[0070] In one optional embodiment, the thickness of the fluorine-containing layer is 5 nm.

[0071] Specifically, in combination with the above embodiments, by adopting the doping conditions in the above embodiments, the thickness of the fluorine-containing layer deposited on the surface of the Ti / DLC composite layer is 5 nanometers.

[0072] Combining all the above embodiments, the implementation process of this solution is described below through the first specific embodiment, including: (1) cleaning the surface of the glass body; (2) adopting the magnetron sputtering ion plating method, and depositing a silicon layer with a thickness of 25 nm on the surface of the cleaned glass body by sputtering a silicon target, and the first deposition conditions corresponding to the silicon layer are as follows: the flow rate of argon gas introduced into the vacuum chamber is 150 sccm, the vacuum degree in the vacuum chamber is 2.0×10 -1 Pa, the ion source power is 2.0 kW, the negative bias voltage applied to the workpiece is 90 V, the sputtering target power is 1.5 kW, and the deposition time is 10 min; (3) adopting the magnetron sputtering ion plating method, and depositing a carbon transition layer with a thickness of 20 nm on the surface of the silicon layer by sputtering a carbon target, and the second deposition conditions corresponding to the carbon transition layer are as follows: keeping the temperature in the vacuum chamber at 25 °C, evacuating the vacuum chamber to evacuate the vacuum chamber to 2.0×10 -3A vacuum degree above Pa is achieved, and then argon gas (Ar with a purity of 99.99%) is introduced into the vacuum chamber, and the air pressure in the vacuum chamber is controlled at 1.0 Pa. The negative bias voltage applied to the workpiece is 150 V, the bias frequency is 150 kHz, and the carbon target current is 1.0 A; (4) Using the magnetron sputtering ion plating method, first co-sputter with a titanium target and a carbon target, and then sputter with the carbon target alone to deposit a Ti / DLC composite layer with a thickness of 10 nm on the surface of the carbon transition layer. The third deposition conditions corresponding to the Ti / DLC composite layer are as follows: The vacuum chamber is evacuated to a vacuum degree above 1.8×10 -3 Pa. Then nitrogen gas (N2 with a purity of 99.99%) is introduced into the vacuum chamber, and the air pressure in the vacuum chamber is controlled at 0.2 Pa. The negative bias voltage applied to the workpiece is 150 V, the bias frequency is 120 kHz. First, co-sputter with a titanium target and a carbon target for 20 min, the titanium target current is 0.5 A, and the carbon target current is 2.5 A. Then turn off the titanium target and sputter with the carbon target alone for 15 min; (5) Using carbon tetrafluoride as the doping gas, dope fluorine ions on the surface of the Ti / DLC composite layer at zero bias voltage to form a fluorine-containing layer with a thickness of 5 nm on the surface of the Ti / DLC composite layer. The doping conditions corresponding to the fluorine-containing layer are as follows: The flow rate of carbon tetrafluoride is 100 sccm, the ion energy is 400 eV, the ion beam density is 100 μA / cm 2 , the vacuum degree in the vacuum chamber is 3.5×10 -4 Pa, the doping time is 20 min, and the deposition rate of fluorine ions is

[0073] Combining all the above embodiments, the implementation process of this solution is described below through a second specific embodiment, including: (1) Clean the surface of the glass body; (2) Using the magnetron sputtering ion plating method, deposit a silicon layer with a thickness of 25 nm on the surface of the cleaned glass body by sputtering a silicon target. The first deposition conditions corresponding to the silicon layer are as follows: The flow rate of argon gas introduced into the vacuum chamber is 165 sccm, the vacuum degree in the vacuum chamber is 2.0×10 -1 Pa, the ion source power is 2.3 kW, the negative bias voltage applied to the workpiece is 100 V, the sputtering target power is 1.7 kW, and the deposition time is 13 min; (3) Using the magnetron sputtering ion plating method, deposit a carbon transition layer with a thickness of 20 nm on the surface of the silicon layer by sputtering a carbon target. The second deposition conditions corresponding to the carbon transition layer are as follows: Keep the temperature in the vacuum chamber at 27°C, evacuate the vacuum chamber to a vacuum degree of 2.0×10 -3A vacuum degree above Pa is achieved, and then argon gas (Ar with a purity of 99.99%) is introduced into the vacuum chamber, and the air pressure in the vacuum chamber is controlled at 1.3 Pa. The negative bias voltage applied to the workpiece is 150 V, the bias frequency is 150 kHz, and the carbon target current is 1.2 A; (4) Using the magnetron sputtering ion plating method, first co-sputter with a titanium target and a carbon target, and then sputter with the carbon target alone to deposit a Ti / DLC composite layer with a thickness of 12 nm on the surface of the carbon transition layer. The third deposition conditions corresponding to the Ti / DLC composite layer are as follows: The vacuum chamber is evacuated to a vacuum degree above 1.8×10 -3 A vacuum degree above Pa is achieved, and then nitrogen gas (N2 with a purity of 99.99%) is introduced into the vacuum chamber, and the air pressure in the vacuum chamber is controlled at 0.2 Pa. The negative bias voltage applied to the workpiece is 150 V, the bias frequency is 120 kHz. First, co-sputter with a titanium target and a carbon target for 20 min, the titanium target current is 0.5 A, and the carbon target current is 2.5 A. Then, turn off the titanium target and sputter with the carbon target alone for 15 min; (5) Using carbon tetrafluoride as the doping gas, dope fluorine ions on the surface of the Ti / DLC composite layer at zero bias voltage to form a fluorine-containing layer with a thickness of 5 nm on the surface of the Ti / DLC composite layer. The doping conditions corresponding to the fluorine-containing layer are as follows: The flow rate of carbon tetrafluoride is 100 sccm, the ion energy is 400 eV, the ion beam density is 100 μA / cm 2 , the vacuum degree in the vacuum chamber is 3.5×10 -4 Pa, the doping time is 20 min, and the deposition rate of fluorine ions is

[0074] Combining all the above embodiments, the implementation process of this solution is described below through a third specific embodiment, including: (1) Clean the surface of the glass body; (2) Using the magnetron sputtering ion plating method, deposit a silicon layer with a thickness of 25 nm on the surface of the cleaned glass body by sputtering a silicon target. The first deposition conditions corresponding to the silicon layer are as follows: The flow rate of argon gas introduced into the vacuum chamber is 180 sccm, the vacuum degree in the vacuum chamber is 2.0×10 -1 Pa, the ion source power is 2.5 kW, the negative bias voltage applied to the workpiece is 110 V, the sputtering target power is 2.0 kW, and the deposition time is 15 min; (3) Using the magnetron sputtering ion plating method, deposit a carbon transition layer with a thickness of 20 nm on the surface of the silicon layer by sputtering a carbon target. The second deposition conditions corresponding to the carbon transition layer are as follows: Keep the temperature in the vacuum chamber at 30°C, evacuate the vacuum chamber to a vacuum degree of 2.0×10 -3A vacuum degree above Pa is achieved, and then argon gas (Ar with a purity of 99.99%) is introduced into the vacuum chamber, and the air pressure in the vacuum chamber is controlled at 1.5 Pa. The negative bias voltage applied to the workpiece is 150 V, the bias frequency is 150 kHz, and the carbon target current is 1.5 A; (4) Using the magnetron sputtering ion plating method, first co-sputtering with a titanium target and a carbon target, and then sputtering with the carbon target alone, a Ti / DLC composite layer with a thickness of 15 nm is deposited on the surface of the carbon transition layer, and the third deposition conditions corresponding to the Ti / DLC composite layer are as follows: The vacuum chamber is evacuated to a vacuum degree above 1.8×10 -3 A vacuum degree above Pa is achieved, and then nitrogen gas (N2 with a purity of 99.99%) is introduced into the vacuum chamber, and the air pressure in the vacuum chamber is controlled at 0.2 Pa. The negative bias voltage applied to the workpiece is 150 V, the bias frequency is 120 kHz. First, co-sputtering with a titanium target and a carbon target for 20 min, the titanium target current is 0.5 A, the carbon target current is 2.5 A, then the titanium target is turned off, and the carbon target is used for single sputtering for 15 min; (5) Using carbon tetrafluoride as the doping gas, doping fluoride ions on the surface of the Ti / DLC composite layer with zero bias voltage to form a fluorine-containing layer with a thickness of 5 nm on the surface of the Ti / DLC composite layer, and the doping conditions corresponding to the fluorine-containing layer are as follows: The flow rate of carbon tetrafluoride is 100 sccm, the ion energy is 400 eV, the ion beam density is 100 μA / cm 2 , the vacuum degree in the vacuum chamber is 3.5×10 -4 Pa, the doping time is 20 min, and the deposition rate of fluoride ions is

[0075] The embodiment of the present invention also provides a waterproof fog glass. Refer to Figure 2 As shown, it is a schematic cross-sectional structure diagram of a preferred embodiment of a waterproof fog glass provided by the present invention. The waterproof fog glass is prepared by using the preparation method of the waterproof fog glass described in any of the above embodiments. The waterproof fog glass includes:

[0076] A glass body;

[0077] A silicon layer formed on the surface of the glass body;

[0078] A carbon transition layer formed on the surface of the silicon layer;

[0079] A composite layer formed on the surface of the carbon transition layer; and,

[0080] A fluorine-containing layer formed on the surface of the composite layer.

[0081] Specifically, the waterproof and anti-fog glass includes a glass body, a silicon layer, a carbon transition layer, a composite layer, and a fluorine-containing layer. Among them, the silicon layer, the carbon transition layer, the composite layer, and the fluorine-containing layer are sequentially stacked on the surface of the glass body to form a protective film on the surface of the glass body, thereby generating the waterproof and anti-fog glass.

[0082] It should be noted that the waterproof and anti-fog glass is prepared by using the preparation method of the waterproof and anti-fog glass described in any one of the above embodiments. The formation methods and corresponding structural features of the silicon layer, the carbon transition layer, the composite layer, and the fluorine-containing layer in the waterproof and anti-fog glass are as shown in the above embodiments and will not be elaborated here.

[0083] In summary, for the waterproof and anti-fog glass and its preparation method provided by the embodiments of the present invention, first, the surface of the glass body is cleaned; then, a silicon layer is deposited on the surface of the cleaned glass body; then, a carbon transition layer is deposited on the surface of the silicon layer; then, a composite layer is deposited on the surface of the carbon transition layer; finally, fluorine ions are doped on the surface of the composite layer to form a fluorine-containing layer, thereby obtaining the waterproof and anti-fog glass. The embodiments of the present invention can generate a waterproof and anti-fog glass with strong hydrophobic properties, enabling the accumulated water on the glass surface to be evacuated as soon as possible, thus meeting the user's usage requirements.

[0084] The above are only the preferred embodiments of the present invention. It should be pointed out that for those of ordinary skill in the art, without departing from the technical principle of the present invention, several improvements and deformations can be made, and these improvements and deformations should also be regarded as the protection scope of the present invention.

Claims

1. A preparation method of waterproof and fog-proof glass, characterized in that, Including: Cleaning the surface of the glass body; Depositing a silicon layer on the surface of the cleaned glass body; Depositing a carbon transition layer on the surface of the silicon layer; Depositing a composite layer on the surface of the carbon transition layer; Doping fluoride ions on the surface of the composite layer to form a fluorine-containing layer.

2. The preparation method of the waterproof fog glass according to claim 1, wherein, The depositing of the silicon layer on the surface of the cleaned glass body specifically includes: Under the preset first deposition conditions, the magnetron sputtering ion plating method is used to deposit a silicon layer on the surface of the cleaned glass body by sputtering a silicon target; wherein, the first deposition conditions include: the argon gas flow rate is 150-180 sccm, the vacuum degree is 2.0×10 -1 Pa, the ion source power is 2.0-2.5 kW, the negative bias voltage is 90-110 V, the sputtering target power is 1.5-2.0 kW, and the deposition time is 10-15 min.

3. The preparation method of the waterproof and fog-proof glass according to claim 2, characterized in that, The thickness of the silicon layer is 25 nm.

4. The preparation method of the waterproof and fog-proof glass according to claim 1, characterized in that, The depositing of the carbon transition layer on the surface of the silicon layer specifically includes: Under the preset second deposition conditions, a carbon transition layer is deposited on the surface of the silicon layer by using a magnetron sputtering ion plating method through sputtering a carbon target; wherein, the second deposition conditions include: the temperature is 25-30 °C, the vacuum degree is above 2.0×10 -3 Pa, the air pressure after introducing argon is 1.0-1.5 Pa, the negative bias voltage is 150 V, the bias frequency is 150 kHz, and the carbon target current is 1.0-1.5 A.

5. The preparation method of the waterproof fog glass according to claim 4, characterized in that, The thickness of the carbon transition layer is 20 nm.

6. The preparation method of the waterproof fog glass according to claim 1, characterized in that, The depositing of the composite layer on the surface of the carbon transition layer specifically includes: Under the preset third deposition conditions, using the magnetron sputtering ion plating method, first co-sputter through a titanium target and a carbon target, and then deposit a composite layer on the surface of the carbon transition layer by separately sputtering the carbon target; wherein, the third deposition conditions include: the vacuum degree is above 1.8×10 -3 Pa, the air pressure after introducing nitrogen is 0.2 Pa, the negative bias voltage is 150 V, the bias frequency is 120 kHz, the current of the titanium target is 0.5 A, the current of the carbon target is 2.5 A, the co-sputtering time of the titanium target and the carbon target is 20 min, and the separate sputtering time of the carbon target is 15 min.

7. The preparation method of the waterproof fog glass according to claim 6, wherein, The thickness of the composite layer is 10 - 15 nm.

8. The preparation method of the waterproof fog glass according to claim 1, characterized in that, The doping of fluoride ions on the surface of the composite layer to form a fluorine-containing layer specifically includes: Under preset doping conditions, using carbon tetrafluoride as the doping gas, doping fluoride ions on the surface of the composite layer at zero bias voltage to form a fluorine-containing layer on the surface of the composite layer; wherein, the doping conditions include: the carbon tetrafluoride flow rate is 100 sccm, the ion energy is 400 eV, the ion beam density is 100 μA / cm 2 , the vacuum degree is 3.5×10 -4 Pa, the doping time is 20 min, and the deposition rate of fluoride ions is 9. The preparation method of the waterproof fog glass according to claim 8, wherein, The thickness of the fluorine-containing layer is 5 nm.

10. A waterproof and fog-proof glass, characterized in that, The anti-fog glass is obtained by using the preparation method of the anti-fog glass according to any one of claims 1 - 9, and the anti-fog glass includes: A glass body; A silicon layer formed on the surface of the glass body; A carbon transition layer formed on the surface of the silicon layer; A composite layer formed on the surface of the carbon transition layer; and, A fluorine-containing layer formed on the surface of the composite layer.

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