Load resistance detection circuit, method and device and storage medium

Abstract

The invention provides a load resistance value detection circuit, method and device and a storage medium, the load resistance value detection circuit comprises a battery unit, a control unit and a switching device, and the switching device is electrically connected with the battery unit, the first end of the control unit and a heating wire of an electronic atomization device. The second end of the control unit is electrically connected with the battery unit, and the third end of the control unit is electrically connected to the common connection end of the switching device and the heating wire. According to the application, the control unit samples the voltage of the battery unit and the heating wire to obtain a first sampling voltage set and a second sampling voltage set; the resistance value of the heating wire can be calculated according to the first sampling voltage set, the second sampling voltage set and the internal resistance value of the switching device, so that the resistance value detection function of the heating wire can be completed on the basis of reducing the electronic material cost, and manpower and equipment investment cost are effectively saved.

Description

Technical Field

[0001] The present application relates to the technical field of resistance detection, and particularly to a load resistance detection circuit, method, device and storage medium. Background Art

[0002] In an electronic atomization device, the core load is a heating wire, and the taste can be adjusted by adjusting its power and the like. However, in actual application, as the heating duration increases, the temperature in the atomization chamber of the atomization device will gradually increase, and the heating wire usually has a certain reaction to the temperature, that is, as the temperature increases, the resistance value of the heating wire also increases; and the change in the resistance value of the heating wire will directly cause the taste after atomization to change. Therefore, the resistance detection of the heating wire in the electronic atomization device is particularly important. The resistance detection scheme of the heating wire in related products has a high cost, resulting in the inability to popularize the automatic resistance detection function in all projects. Therefore, considering practicality and cost, a low-cost resistance detection scheme is particularly important. Summary of the Invention

[0003] The main purpose of the present application is to provide a load resistance detection circuit, method, device and storage medium, aiming to solve the problem of high design cost of the resistance detection scheme in the related art.

[0004] To achieve the above object, the first aspect of the present application provides a load resistance detection circuit applied to an electronic atomization device, including: a battery unit, a control unit and a switching device. The switching device is electrically connected to the battery unit, the first end of the control unit and the heating wire of the electronic atomization device respectively. The second end of the control unit is electrically connected to the battery unit, and the third end of the control unit is electrically connected to the common connection end of the switching device and the heating wire. The first end of the control unit is used to output a first drive control signal to the switching device to control the switching device to be in a conducting state. The second end of the control unit is used to sample the voltage of the battery unit to obtain a first sampling voltage set when the switching device is in a conducting state. The third end of the control unit is used to sample the voltage of the heating wire to obtain a second sampling voltage set when the switching device is in a conducting state. The internal resistance value of the switching device, the first sampling voltage set and the second sampling voltage set are used by the control unit to calculate the resistance value of the heating wire.

[0005] The second aspect of the present application provides a method for detecting the resistance value of a load, which is applied to the load resistance detection circuit as described in the first aspect of the present application. The method includes: transmitting a first drive control signal to a switching device; wherein, the first drive control signal is used to control the switching device to be in a conducting state; when the switching device is in the conducting state, sampling the voltages of the battery unit and the heating wire respectively to obtain a first sampling voltage set and a second sampling voltage set; calculating the resistance value of the heating wire according to the first sampling voltage set, the second sampling voltage set and the internal resistance value of the switching device.

[0006] The third aspect of the present application provides an electronic atomization device, including: a memory and a control unit. The control unit is configured to execute a computer program stored on the memory. When the control unit executes the computer program, each step in the load resistance detection method provided in the second aspect of the present application is implemented.

[0007] The fourth aspect of the present application provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by the control unit, each step in the load resistance detection method provided in the second aspect of the present application is implemented.

[0008] As can be seen from the above description, in the present application, the control unit controls the switching device to enter the conducting state so that the battery unit outputs energy to the heating wire, enabling the heating wire to enter the working state. Then, the control unit samples the battery unit and the heating wire, and the resistance value of the heating wire can be calculated according to the two sampling voltages and the internal resistance value of the switching device. Therefore, the solution of the present application can complete the function of detecting the resistance value of the heating wire on the basis of reducing the cost of electronic components. Compared with the traditional manual testing and complex detection structures, it can effectively save the labor and equipment input costs. Description of the Drawings

[0009] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative efforts.

[0010] Figure 1 It is a schematic structural diagram of a load resistance detection circuit according to an embodiment of the present application; Figure 2 It is a schematic circuit diagram of a load resistance detection circuit according to an embodiment of the present application; Figure 3 It is a schematic basic flow diagram of a load resistance detection method according to an embodiment of the present application; Figure 4It is a characteristic curve diagram of the internal resistance and current of a PMOS in an embodiment of the present application; Figure 5 It is a characteristic curve diagram of the internal resistance and temperature of a PMOS in an embodiment of the present application; Figure 6 It is a schematic structural diagram of an electronic atomization device in an embodiment of the present application. Specific embodiments

[0011] To make the invention purpose, features, and advantages of the present application more obvious and understandable, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of them. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application.

[0012] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the embodiments of the present application, "a plurality" means two or more, unless otherwise clearly and specifically defined.

[0013] In the related art, due to the problem of relatively high design cost of the resistance detection scheme, for this reason, the embodiments of the present application provide a load resistance detection circuit.

[0014] As Figure 1 shown is a schematic structural diagram of a load resistance detection circuit provided by an embodiment of the present application. The load resistance detection circuit includes: a battery unit 100, a control unit 200, and a switching device 300. The switching device 300 is electrically connected to the battery unit 100, the first end of the control unit 200, and the heating wire 400 of the electronic atomization device respectively. The second end of the control unit 200 is electrically connected to the battery unit 100, and the third end of the control unit 200 is electrically connected to the common connection end of the switching device 300 and the heating wire 400.

[0015] Specifically, the first end of the control unit is used to output a first drive control signal to the switching device to control the switching device to be in a conducting state; the second end of the control unit is used to sample the voltage of the battery unit when the switching device is in a conducting state to obtain a first sampling voltage set; the third end of the control unit is used to sample the voltage of the heating wire when the switching device is in a conducting state to obtain a second sampling voltage set; the internal resistance value of the switching device, the first sampling voltage set, and the second sampling voltage set are used by the control unit to calculate the resistance value of the heating wire.

[0016] In this embodiment, the load resistance detection circuit mainly includes a drive output circuit and two voltage sampling circuits. Among them, the drive output circuit realizes the on-off of the output through a switching device. The drive control signal is output by the control unit and transmitted to the switching device to control it to be in the on state. When the switching device is in the on state, the battery unit will output drive to the heating wire to make it enter the working state. Then, by collecting the voltage of the battery unit and the voltage of the heating wire, the resistance value of the heating wire can be calculated according to the sampled voltage and the internal resistance of the switching device, and the function of detecting the resistance value of the heating wire is completed. Since the load resistance detection circuit in this embodiment does not need to use multiple switching circuits to realize the switching control of power supply and voltage sampling, and does not need to set an additional sampling resistor for sampling the load voltage and calculating the resistance value, the load resistance detection circuit provided in this embodiment can realize the function of detecting the load resistance value without increasing the cost of electronic materials.

[0017] As Figure 2 shown is the circuit schematic diagram of a load resistance detection circuit provided in this embodiment. Please refer to Figure 2 , the switching device 300 includes a MOS transistor Q1. The source electrode of the MOS transistor Q1 is electrically connected to the battery unit 100, the drain electrode of the MOS transistor Q1 is electrically connected to the heating wire 400, and the gate electrode of the MOS transistor Q1 is electrically connected to the control unit 200.

[0018] Specifically, in this embodiment, the switching device can realize the functions of switch control and reference resistance. When used as a switch, it can receive the power supply voltage transmitted by the battery unit and then output a large current to the heating wire. Therefore, the switching device can optionally adopt a MOS transistor device, such as Figure 2 the PMOS transistor of model NP1208MR shown. The gate electrode of the MOS transistor Q1 can receive the drive control signal transmitted by the first terminal F1_EN of the control unit. Among them, when the drive control signal is at a low level, the MOS transistor Q1 is turned on, and the drive output circuit is in the on state, and the power supply voltage can be transmitted to the heating wire through the MOS transistor Q1; when the drive control signal is at a high level, the MOS transistor Q1 is turned off, and the drive output circuit is in the off state, and at this time the heating wire does not work. In addition, the battery unit in this embodiment includes multiple battery cells, and the battery cells can be connected in series. The control unit can be a microcontroller MCU. The second terminal B+_ADC and the third terminal F1_ADC of the control unit are respectively used to sample the voltages of the battery unit and the heating wire to obtain two sets of sampled voltages for calculating the resistance value of the heating wire.

[0019] Furthermore, please refer to Figure 2, the load resistance detection circuit further includes a first resistor R1 and a second resistor R2. One ends of the first resistor R1 and the second resistor R2 are both electrically connected to the common connection end of the battery unit 100 and the switching device 300. The other end of the first resistor R1 is electrically connected to the common connection end of the heating wire 400 and the switching device 300. The other end of the second resistor R2 is electrically connected to the common connection end of the first end of the control unit 200 and the switching device 300.

[0020] Furthermore, please refer to Figure 2 , the load resistance detection circuit further includes a third resistor R3, and the third resistor R3 is electrically connected between the switching device 300 and the first end of the control unit 200.

[0021] Specifically, in this embodiment, both the first resistor R1 and the second resistor R2 are pull-up resistors. Among them, the first resistor R1 can be used for buffering to prevent the switching device from being damaged by the high-voltage spikes generated during the power-on and power-off processes of the power supply; the second resistor R2 can be used to give a definite level to the first end of the switching device when powering on, preventing the level of the first end of the switching device from being interfered during power-on and affecting the normal turn-on of the switching device. When powering off, the second resistor R2 can absorb the residual voltage so that the switching device can be quickly turned off. In addition, the second resistor R2 can also play a role in preventing electrostatic breakdown; the third resistor R3 is a current-limiting resistor, which can be used to limit the magnitude of the branch current to prevent the device from being burned out due to excessive current. The resistance values of the first resistor R1, the second resistor R2, and the third resistor R3 in this embodiment are 1MΩ, 10KΩ, and 100Ω respectively.

[0022] In addition, in some embodiments, the load resistance detection circuit may further include an amplifier circuit (not shown in the figure). The amplifier circuit includes an amplifier. The input end of the amplifier is electrically connected to the common connection end of the switching device and the heating wire. The output end of the amplifier is electrically connected to the third end of the control unit. And, the amplifier circuit further includes a capacitor. One end of the capacitor is electrically connected to the output end of the amplifier, and the other end of the capacitor is grounded.

[0023] In this embodiment, in order to ensure that a clearer voltage sampling signal can be obtained, an amplifier circuit can also be added at the voltage signal sampling end to amplify the signal. The amplifier circuit can be implemented by an amplifier. The amplifier can be an N-fold high-precision single operational amplifier. In addition, the output end of the amplifier is also grounded through a capacitor to improve the circuit stability coefficient. It should be noted that adding the amplifier circuit has a better effect than not adding it, but not adding this amplifier circuit can also achieve better detection accuracy and can greatly reduce the device cost.

[0024] The embodiment of the present application also provides a load resistance detection method, which is applied to the above load resistance detection circuit, as Figure 3Schematic diagram of the basic process of the load resistance detection method provided in this embodiment. The load resistance detection method includes the following steps: Step 301: Transmit the first drive control signal to the switching device.

[0025] Specifically, in this embodiment, the control unit controls the switching device to switch to the on state by outputting the first drive control signal. When the switching device is in the on state, the drive output circuit is in the on state. At this time, the battery unit can transmit the power supply voltage to the heating wire through the switching device, enabling the heating wire to enter the working state. Among them, the switching device can be a PMOS transistor. Correspondingly, the first drive control signal is a low-level signal.

[0026] Step 302: When the switching device is in the on state, sample the voltages of the battery unit and the heating wire respectively to obtain a first sampling voltage set and a second sampling voltage set.

[0027] Specifically, in this embodiment, when the switching device is in the on state, in order to obtain higher detection accuracy, it is also possible to set a waiting period. Until the conduction duration of the switching device reaches a preset duration threshold, such as 15 μs, the control unit starts to perform AD sampling on the voltages of the battery unit and the heating wire, and obtains a first sampling voltage set and a second sampling voltage set respectively. Among them, AD sampling can convert an input voltage signal into an output digital signal. It should be noted that during high-rate discharge of a normal battery unit, there will be a problem of voltage drop. If the battery voltage is sampled immediately when the switching device is turned on, the normal voltage drop cannot be collected. Using this sampled voltage for subsequent resistance calculation will affect the accuracy of the calculation result. Therefore, the duration of the undershoot generated during the discharge of the battery unit can be determined according to the specifications of the actually used battery unit, and the average value of the durations obtained from multiple tests can be taken to initially determine the duration threshold for delayed sampling. In addition, since the long-term operation of the heating wire will cause heating problems in the atomizer, based on the principle of product stability, the shorter the sampling time, the higher the safety protection of the entire product. Therefore, when performing multiple heating wire resistance tests, the interval time between every two tests should also meet the preset duration threshold, such as not less than 2 s, to ensure the safety and stability of the product and at the same time ensure the accuracy of the resistance test. Considering the above factors, the final sampling delay time can be determined to ensure the best effect.

[0028] In some embodiments of this embodiment, the voltages of the battery unit and the heating wire are sampled respectively to obtain a first sampled voltage set and a second sampled voltage set, including: when the total duration of the switch device in the conducting state reaches a preset duration threshold, the voltage of the battery unit is sampled a preset number of times according to a preset sampling interval to obtain the first sampled voltage set; the voltage of the heating wire is sampled a preset number of times according to the sampling interval to obtain the second sampled voltage set; after obtaining the first sampled voltage set and the second sampled voltage set, a second drive control signal is transmitted to the switch device; wherein, the second drive control signal is used to control the switch device to be in the cut-off state.

[0029] Specifically, in this embodiment, when the conduction duration of the switch device reaches the preset duration threshold, the voltages of the battery unit and the heating wire are sampled respectively. To ensure the accuracy of the calculation results, multiple samplings need to be performed in one test, and the number of samplings is set according to actual needs. For example, sampling is performed 5 times, and the interval between every two samplings can also be designed according to actual needs within the duration range that ensures the best effect. For example, the interval between every two samplings is 5 us. Thus, two sampled voltage sets can be obtained, and each sampled voltage set contains 5 sampled voltage values. After obtaining the sampled voltages, the drive output circuit can be turned off to stop the heating wire from working. Therefore, the switch device can be controlled to be in the cut-off state by outputting the second drive control signal to prevent the continuous heating of the heating wire from affecting the detection results; wherein, when the switch device is a PMOS transistor, the second drive control signal can correspondingly be a high-level signal. In addition, in some embodiments, when the conduction duration of the switch device reaches the preset duration threshold, it can further be determined whether the current heating wire is in the normal heating state to ensure that the data detection moment is within the normal heating time period of the heating wire, thereby further ensuring the accuracy of the calculation results. Whether the heating wire is in the normal heating state can be determined according to the product usage state (such as the puffing state or the puffing interval state). For example, when the product is an atomizing device, the usage state of the product can be determined according to the change in the amount of the atomizing medium generated by the internal heating of the product to determine whether the current product is in the puffing state or the puffing interval state.

[0030] Step 303: Calculate the resistance value of the heating wire according to the first sampled voltage set, the second sampled voltage set and the internal resistance value of the switch device.

[0031] Specifically, in this embodiment, the sampled voltage of the battery unit, the sampled voltage of the heating wire, and the internal resistance value of the switching device are used to calculate the resistance value of the heating wire, which has higher accuracy compared to the method of determining the relationship curve between the temperature and resistance of the heating wire. This is because the heating of the heating wire of the atomization device and the measurement of the temperature of the heating wire are carried out simultaneously. At this time, when using a high-gain operational amplifier to transmit the detection signal according to the traditional detection structure, it is very easy to introduce measurement errors. The error generated by the resistance value test structure and method adopted in this embodiment does not exceed 50 mΩ, meeting the detection standard for normal device testing.

[0032] In some embodiments of this embodiment, calculating the resistance value of the heating wire according to the first sampled voltage set, the second sampled voltage set, and the internal resistance value of the switching device includes: respectively calculating the means of the first sampled voltage set and the second sampled voltage set to obtain the first sampled voltage mean and the second sampled voltage mean; calculating the product of the second sampled voltage mean and the internal resistance value of the switching device, calculating the difference between the first sampled voltage mean and the second sampled voltage mean, dividing the product by the difference to obtain an intermediate value, and calculating the intermediate value and the internal resistance value of the load resistance detection circuit to obtain the resistance value of the heating wire.

[0033] Specifically, in this embodiment, after obtaining the sampled voltage sets of the battery unit and the heating wire, the means of the multiple sampled voltages in the two sampled voltage sets are respectively calculated to obtain the sampled voltage means corresponding to the two sampled voltage sets. Then, the resistance value of the heating wire can be calculated according to the two sampled voltage means. In addition, it should also be noted that when there is an abnormal sampled voltage in the multiple sampled voltages obtained by sampling that significantly deviates from the other voltage values, this value can be excluded from the calculation to further ensure the accuracy of the calculation data. This embodiment uses a switching device to replace an additional sampling resistor, and can detect the resistance value of the heating wire based on basic electronic components. The specific calculation formula is as follows: ; where is the resistance value of the heating wire, is the sampled voltage mean of the heating wire, is the sampled voltage mean of the battery unit, is the internal resistance value of the switching device, is the internal resistance value of the load resistance detection circuit. After calculating the resistance value of the heating wire, it is also controlled to transmit the calculated result display value to the display terminal for display through a communication interface such as a USB interface.

[0034] Further, in some embodiments of this embodiment, before calculating the product of the mean value of the second sampling voltage and the internal resistance value of the switching device, it further includes: obtaining a first characteristic curve graph of the internal resistance of the switching device versus current and a second characteristic curve graph of the internal resistance of the switching device versus temperature; determining a first internal resistance value of the switching device according to a preset switching device current range, a switching device turn-on reference voltage range, and the first characteristic curve graph; determining a second internal resistance value of the switching device according to a preset switching device temperature range, a switching device turn-on reference voltage range, and the second characteristic curve graph; and determining the internal resistance value of the switching device according to the first internal resistance value and the second internal resistance value.

[0035] Specifically, in this embodiment, the internal resistance value of the switching device can be obtained from the product specification sheet. Taking the switching device as a PMOS as an example, the internal resistance value of the PMOS can be obtained by combining the first characteristic curve graph of the PMOS internal resistance versus current and the second characteristic curve graph of the PMOS internal resistance versus temperature. For example Figure 4 as shown in the characteristic curve graph of the PMOS internal resistance versus current, the three curves in the figure correspond to different gate-source voltages V GS , the abscissa is the drain current of the PMOS, and the ordinate is the internal resistance of the PMOS. First, determine the V GS of the MOS used, for example, the commonly used V GS is about 3.7V; it should be noted that the gate-source voltage of the MOS transistor is one of the important parameters for the operation of the MOS transistor, and its change will directly affect the on and off of the MOS transistor, output current and output voltage, input capacitance and output capacitance, etc.; then determine the output current range in the actual scenario, for example, between 4 and 6A. From this, it can be known that the internal resistance R M of the PMOS is between 62mΩ ± 5mΩ; since the internal resistance of the MOS transistor will be affected by temperature during operation, the temperature factor in the actual operation process also needs to be considered when determining the internal resistance of the PMOS transistor. For example Figure 5 as shown in the characteristic curve graph of the PMOS internal resistance versus temperature, the abscissa is the V GS of the PMOS, and the ordinate is the internal resistance of the PMOS. The two curves in the figure correspond to different temperatures. By Figure 5 it can be known that when the selected temperature range is 25°C to 125°C and the V GS range is 3.3V to 4.2V, the internal resistance range of the PMOS is between 57mΩ and 67mΩ. Therefore, by combining the two characteristic graphs, the internal resistance value R M of the PMOS can be obtained as 62mΩ ± 5mΩ.

[0036] The load resistance detection circuit provided by the embodiment of the present application mainly includes a drive output circuit and two voltage sampling circuits. Among them, the drive output circuit realizes the on / off of the output through a switching device. A drive control signal is output by a control unit and transmitted to the switching device to control it to be in the conducting state. When the switching device is in the conducting state, the battery unit will output drive to the heating wire to make it enter the working state. Then, by collecting the voltage of the battery unit and the voltage of the heating wire, the resistance value of the heating wire can be calculated according to the sampled voltage and the internal resistance of the switching device, and the function of detecting the resistance value of the heating wire is completed. Since the load resistance detection circuit in this embodiment does not need to use multiple switching circuits to realize the switching control of power supply and voltage sampling, and does not need to set an additional sampling resistor for sampling the load voltage and calculating the resistance value, the load resistance detection circuit provided by this embodiment can realize the function of detecting the load resistance value without increasing the cost of electronic materials.

[0037] The embodiment of the present application also provides an electronic atomization device. Figure 6 FIG. 5 is a schematic structural diagram of an electronic atomization device provided by this embodiment. This electronic atomization device can be used to implement the load resistance detection method in the foregoing embodiment, and mainly includes: A memory 601, a control unit 602, and a computer program 603 stored on the memory 601 and operable on the control unit 602. The memory 601 and the control unit 602 are communicatively connected. When the control unit 602 executes the computer program 603, the method in the foregoing embodiment is implemented.

[0038] The memory 601 can be a high-speed random access memory (RAM, Random Access Memory), or a non-volatile memory, such as a disk memory. The memory 601 is used to store executable program codes, and the control unit 602 is coupled to the memory 601.

[0039] Further, the embodiment of the present application also provides a computer-readable storage medium. This computer-readable storage medium can be disposed in the above-mentioned electronic atomization device. This computer-readable storage medium can be the memory in the foregoing Figure 6 shown embodiment.

[0040] A computer program is stored on this computer-readable storage medium. When the program is executed by a processor, the load resistance detection method in the foregoing embodiment is implemented. Further, this computer-readable storage medium can also be various media such as a USB flash drive, a mobile hard disk, a read-only memory (ROM, Read-Only Memory), a RAM, a magnetic disk, or an optical disc that can store program codes.

[0041] It should be noted that the various embodiments in the content of this application are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. For the same or similar parts among the embodiments, reference can be made to each other.

[0042] It should also be noted that in the content of this application, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprising", "including" or any other variant thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements not only includes those elements, but also includes other elements not expressly listed, or further includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "comprising an..." does not exclude the existence of additional identical elements in the process, method, article or device comprising the element.

[0043] The above description of the disclosed embodiments enables those skilled in the art to implement or use the content of this application. Various modifications to these embodiments will be obvious to those skilled in the art, and the general principles defined in the content of this application can be implemented in other embodiments without departing from the spirit or scope of the content of this application. Therefore, the content of this application will not be limited to these embodiments shown in the content of this application, but will conform to the widest scope consistent with the principles and novel features disclosed in the content of this application.

Claims

1. A load resistance detection circuit, which is applied to an electronic atomization device, and is characterized in that, Comprising: A battery cell, a control unit and a switching device, the switching device is electrically connected to the battery cell, the first end of the control unit, and the heating wire of the electronic atomization device respectively, the second end of the control unit is electrically connected to the battery cell, and the third end of the control unit is electrically connected to the common connection end of the switching device and the heating wire; The first end of the control unit is used to output a first drive control signal to the switching device to control the switching device to be in a conducting state; the second end of the control unit is used to sample the voltage of the battery cell when the switching device is in a conducting state to obtain a first sampling voltage set; the third end of the control unit is used to sample the voltage of the heating wire when the switching device is in a conducting state to obtain a second sampling voltage set; the internal resistance value of the switching device, the first sampling voltage set and the second sampling voltage set are used by the control unit to calculate the resistance value of the heating wire.

2. The load resistance value detection circuit according to claim 1, characterized in that The switching device includes a MOS transistor, the source electrode of the MOS transistor is electrically connected to the battery cell, the drain electrode of the MOS transistor is electrically connected to the heating wire, and the gate electrode of the MOS transistor is electrically connected to the control unit.

3. The load resistance value detection circuit according to claim 1, wherein It further includes a first resistor and a second resistor, one ends of the first resistor and the second resistor are both electrically connected to the common connection end of the battery cell and the switching device, the other end of the first resistor is electrically connected to the common connection end of the heating wire and the switching device, and the other end of the second resistor is electrically connected to the common connection end of the first end of the control unit and the switching device.

4. The load resistance value detection circuit according to claim 2, wherein It further includes a third resistor, and the third resistor is electrically connected between the switching device and the first end of the control unit.

5. A load resistance detection method, applied to the load resistance detection circuit according to any one of claims 1 to 4, characterized in that, Comprising: Transmitting a first drive control signal to the switching device; wherein, the first drive control signal is used to control the switching device to be in a conducting state; When the switching device is in a conducting state, sampling the voltages of the battery cell and the heating wire respectively to obtain a first sampling voltage set and a second sampling voltage set; Calculating the resistance value of the heating wire according to the first sampling voltage set, the second sampling voltage set and the internal resistance value of the switching device.

6. The load resistance value detection method according to claim 5, characterized in that The sampling the voltages of the battery cell and the heating wire respectively to obtain a first sampling voltage set and a second sampling voltage set includes: When the total duration of the switching device being in a conducting state reaches a preset duration threshold, sampling the voltage of the battery cell a preset number of times according to a preset sampling interval to obtain a first sampling voltage set; Sampling the voltage of the heating wire a preset number of times according to the sampling interval to obtain a second sampling voltage set; After obtaining the first sampling voltage set and the second sampling voltage set, transmitting a second drive control signal to the switching device; wherein, the second drive control signal is used to control the switching device to be in a cut-off state.

7. The load resistance value detection method according to claim 5, characterized in that The calculating the resistance value of the heating wire according to the first sampling voltage set, the second sampling voltage set and the internal resistance value of the switching device includes: Calculate the means of the first sampling voltage set and the second sampling voltage set respectively to obtain the first sampling voltage mean and the second sampling voltage mean; Calculate the product of the second sampling voltage mean and the internal resistance value of the switching device, and calculate the difference between the first sampling voltage mean and the second sampling voltage mean; Divide the product by the difference to obtain an intermediate value, and calculate the intermediate value and the internal resistance value of the load resistance detection circuit to obtain the resistance value of the heating wire.

8. The load resistance value detection method according to claim 7, wherein Before calculating the product of the second sampling voltage mean and the internal resistance value of the switching device, further include: Obtain a first characteristic curve graph of the internal resistance of the switching device versus current and a second characteristic curve graph of the internal resistance of the switching device versus temperature preset; Determine the first internal resistance value of the switching device according to the preset switching device current range, the switching device turn-on reference voltage range, and the first characteristic curve graph; Determine the second internal resistance value of the switching device according to the preset switching device temperature range, the switching device turn-on reference voltage range, and the second characteristic curve graph; Determine the internal resistance value of the switching device according to the first internal resistance value and the second internal resistance value.

9. An electronic atomization device, characterized in that, It includes a memory and a control unit, wherein: The control unit is used to execute a computer program stored on the memory; When the control unit executes the computer program, it implements the steps in the load resistance detection method according to any one of claims 5 to 8.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the control unit, it implements the steps in the load resistance detection method according to any one of claims 5 to 8.

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