Substrate processing apparatus, substrate processing method, and storage medium

Abstract

The present invention provides a substrate processing apparatus, a substrate processing method, and a storage medium for efficiently processing a substrate by using ozone water. The substrate processing apparatus includes a processing container, an ozone water supply unit, an ozone water discharge unit, and a pressurizing unit. The processing container provides a processing space which can accommodate a substrate and is sealed when the substrate is processed. The ozone water supply unit supplies ozone water to the treatment space. The ozone water discharge unit discharges ozone water from the treatment space. The pressurizing part pressurizes the ozone water at a position closer to the upstream side than the ozone water supply part.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, a substrate processing method, and a storage medium. Background Art

[0002] In the prior art, a technique of treating a substrate such as a semiconductor wafer (hereinafter also referred to as a wafer) with ozone water is known (see Patent Document 1).

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2021-190445 Summary of the Invention

[0006] Technical Problem to be Solved by the Invention

[0007] The present invention provides a technique capable of efficiently treating a substrate with ozone water.

[0008] Technical Solution for Solving the Technical Problem

[0009] A substrate processing apparatus according to one aspect of the present invention includes a processing container, an ozone water supply unit, an ozone water discharge unit, and a pressurizing unit. The processing container provides a processing space capable of accommodating a substrate and being sealed during substrate processing. The ozone water supply unit supplies ozone water to the processing space. The ozone water discharge unit discharges ozone water from the processing space. The pressurizing unit pressurizes the ozone water at a position upstream of the ozone water supply unit.

[0010] Advantageous Effects of the Invention

[0011] According to the present invention, a substrate can be efficiently treated with ozone water. Brief Description of the Drawings

[0012] Figure 1 It is a diagram showing a schematic configuration of a substrate processing system according to an embodiment.

[0013] Figure 2 It is a schematic diagram showing a piping configuration of a substrate processing system according to an embodiment.

[0014] Figure 3 It is a schematic diagram showing a structural example of a first processing unit according to an embodiment.

[0015] Figure 4 It is a diagram showing a state in which a processing container of a first processing unit according to an embodiment is separated.

[0016] Figure 5 It is a schematic diagram showing a structural example of a second processing unit according to an embodiment.

[0017] Figure 6It is a flowchart showing the process of substrate processing performed by the substrate processing system of the embodiment.

[0018] Figure 7 It is a flowchart showing the process of ozone water treatment performed by the substrate processing system of the embodiment.

[0019] Figure 8 It is a flowchart showing the process of rinse processing performed by the substrate processing system of the embodiment.

[0020] Figure 9 It is a schematic diagram showing the piping structure of the substrate processing system of the modified example of the embodiment.

[0021] Figure 10 It is a schematic diagram showing a structural example of the first processing unit of the modified example of the embodiment.

[0022] Description of Reference Numerals

[0023] 1 Substrate processing system

[0024] 5 Ozone water generation unit

[0025] 7 Rinse liquid supply path

[0026] 16 First processing unit

[0027] 18 Substrate transfer device

[0028] 19 Control unit

[0029] 33 Pump

[0030] 65 First discharge path

[0031] 66 Second discharge path

[0032] 80 Processing container

[0033] 81 Mounting portion

[0034] 84 Heater

[0035] 90 Liquid supply unit

[0036] 91 Mask member

[0037] 92 Supply pipe

[0038] 92a Supply port

[0039] 93 Other supply ports

[0040] 100 Liquid discharge portion

[0041] S Processing space

[0042] W Wafer. Detailed Embodiment

[0043] Hereinafter, with reference to the accompanying drawings, a manner (hereinafter referred to as "embodiment") for implementing a substrate processing apparatus, a substrate processing method, and a storage medium of the present invention will be described in detail. In addition, the present invention is not limited to this embodiment. It should be noted that the drawings are schematic, and the dimensional relationships of the respective elements, the ratios of the respective elements, etc. may sometimes be different from the actual ones. Furthermore, between the drawings, there may sometimes be parts where the dimensional relationships and ratios of each other are different.

[0044] There is a known technique of treating a substrate such as a semiconductor wafer (hereinafter also referred to as a wafer) using ozone water. However, in the above-described prior art, there is room for further improvement in efficiently treating a substrate using ozone water.

[0045] Therefore, a technique that can overcome the above problems and efficiently treat a substrate using ozone water is expected.

[0046] <Overview of Substrate Processing System>

[0047] First, with reference to Figure 1 , the schematic structure of the substrate processing system 1 of the embodiment will be described. Figure 1 is a diagram showing the schematic structure of the substrate processing system 1 of the embodiment. In addition, the substrate processing system 1 is an example of a substrate processing apparatus. Hereinafter, in order to clarify the positional relationship, mutually orthogonal X-axis, Y-axis, and Z-axis are defined, and the positive direction of the Z-axis is set as the vertically upward direction.

[0048] As Figure 1 shown, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 is disposed adjacent to the processing station 3.

[0049] The loading / unloading station 2 includes a front-opening wafer cassette mounting portion 11 and a transfer portion 12. In the front-opening wafer cassette mounting portion 11, a plurality of front-opening wafer cassettes C that horizontally store a plurality of substrates, which are semiconductor wafers W (hereinafter referred to as wafers W) in the embodiment, can be mounted.

[0050] The transfer portion 12 is disposed adjacent to the front-opening wafer cassette mounting portion 11 and includes a substrate transfer device 13 and a transfer section 14 inside. The substrate transfer device 13 includes a wafer holding mechanism for holding the wafer W. In addition, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and rotate about the vertical axis, and transfers the wafer W between the front-opening wafer cassette C and the transfer section 14 using the wafer holding mechanism.

[0051] The processing station 3 is disposed adjacent to the transfer unit 12. The processing station 3 includes a transfer unit 15, a plurality of first processing units 16, and a plurality of second processing units 17. The plurality of first processing units 16 are arranged on one side of the transfer unit 15 (here, the positive Y-axis side). The plurality of second processing units 17 are arranged on the other side of the transfer unit 15 (here, the negative Y-axis side).

[0052] The transfer unit 15 is internally provided with a substrate transfer device 18. The substrate transfer device 18 includes a wafer holding mechanism for holding the wafer W. In addition, the substrate transfer device 18 can move in the horizontal and vertical directions and rotate about the vertical axis, and uses the wafer holding mechanism to transfer the wafer W between the transfer portion 14, the first processing unit 16, and the second processing unit 17.

[0053] The first processing unit 16 performs a given substrate process on the wafer W transferred by the substrate transfer device 18. Details of the first processing unit 16 will be described later.

[0054] The second processing unit 17 performs a given substrate process on the wafer W transferred by the substrate transfer device 18. Details of the second processing unit 17 will be described later.

[0055] In addition, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 19 and a storage unit 20. Programs for controlling various processes executed in the substrate processing system 1 are stored in the storage unit 20. The control unit 19 controls the operation of the substrate processing system 1 by reading out and executing the programs stored in the storage unit 20.

[0056] In addition, the program may also be a program recorded on a computer-readable storage medium, and is installed from the storage medium into the storage unit 20 of the control device 4. Examples of computer-readable storage media include a hard disk (HD), a floppy disk (FD), a compact disc (CD), a magneto-optical disc (MO), a memory card, and the like.

[0057] The substrate processing system 1 further includes an ozone water generation unit 5. The ozone water generation unit 5 generates ozone water having a given ozone concentration and supplies the generated ozone water to the first processing unit 16. Details of the ozone water generation unit 5 will be described later.

[0058] In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the front-opening wafer cassette C placed on the front-opening wafer cassette placement unit 11, and places the taken-out wafer W on the transfer portion 14. The wafer W placed on the transfer portion 14 is taken out from the transfer portion 14 by the substrate transfer device 18 of the processing station 3 and sent into the first processing unit 16.

[0059] The wafer W sent to the first processing unit 16 is sent out from the first processing unit 16 by the substrate transfer device 18 after being processed by the first processing unit 16, and is sent into the second processing unit 17.

[0060] The wafer W sent to the second processing unit 17 is sent out from the second processing unit 17 by the substrate transfer device 18 after being processed by the second processing unit 17 and is placed on the transfer section 14. Then, the processed wafer W placed on the transfer section 14 is sent back to the front-opening wafer cassette mounting section 11 of the front-opening wafer cassette C by the substrate transfer device 13.

[0061] <Substrate Processing System's Pipe Structure>

[0062] Next, with reference to Figure 2 , the pipe structure of the substrate processing system 1 will be described. Figure 2 is a schematic diagram showing the pipe structure of the substrate processing system 1 of the embodiment.

[0063] In Figure 2 's example, a case where 6 processing areas X each including one first processing unit 16 are arranged is shown. In addition, for easy understanding, the illustration of the pipe structure within the processing area X other than the processing area X shown in the lower left figure is omitted.

[0064] As Figure 2 shown, the substrate processing system 1 of the embodiment includes an ozone water generation unit 5 and a plurality of first processing units 16.

[0065] The ozone water generation unit 5 generates ozone water having a given ozone concentration. This "given ozone concentration" means, for example, an ozone concentration capable of removing (stripping) the resist film formed on the wafer W (refer to Figure 1 ), and is, for example, in the range of 0 mg / L to 1500 mg / L.

[0066] In addition, the substrate processing system 1 of the embodiment includes a processing liquid supply path 21 provided from the ozone water generation unit 5 to the plurality of first processing units 16. This processing liquid supply path 21 connects between the DIW supply source 22a and the first processing unit 16.

[0067] The processing liquid supply path 21 is configured to sequentially connect the first supply path 22, the tank 23, the second supply path 24, and the third supply path 60.

[0068] The first supply path 22 supplies DIW (DeIonized Water) which is a raw material for ozone water to the tank 23. The first supply path 22 sequentially includes a DIW supply source 22a, a degassing module 22b, a cooler 22c, a valve 22d, a constant pressure valve 22e, and a flowmeter 22f from the upstream side.

[0069] The DIW supply source 22a is, for example, a tank storing DIW. The degassing module 22b removes dissolved gases such as nitrogen dissolved in the DIW supplied from the DIW supply source 22a. By removing the dissolved gases contained in the DIW using this degassing module 22b, ozone gas can be efficiently dissolved in the DIW.

[0070] The cooler 22c cools the DIW flowing in the first supply path 22 to a given temperature (for example, 5°C to 20°C). By cooling the DIW using this cooler 22c, ozone gas can be efficiently dissolved in the DIW.

[0071] The constant pressure valve 22e adjusts the flow rate of the DIW supplied to the tank 23 based on the flow rate of the DIW measured by the flow meter 22f. That is, the constant pressure valve 22e performs feedback control based on the flow rate of the DIW measured by the flow meter 22f.

[0072] A confluence section 27 is provided on the downstream side of the flow meter 22f in the first supply path 22. And an acid-based chemical solution supply section 26 is connected to this confluence section 27.

[0073] The acid-based chemical solution supply section 26 supplies acid-based chemical solutions such as organic acids (citric acid, acetic acid, etc.), hydrochloric acid, sulfuric acid, nitric acid, etc. to the first supply path 22 of the treatment liquid supply path 21. By supplying an acid-based chemical solution to the DIW to adjust the pH of the DIW to acidic, the concentration of ozone dissolved in the DIW can be increased. In addition, the acid-based chemical solution supply section 26 may also supply a gas such as carbon dioxide that adjusts the pH of the DIW to acidic.

[0074] The acid-based chemical solution supply section 26 successively includes an acid-based chemical solution supply source 26b, a valve 26c, a constant pressure valve 26d, and a flow meter 26e from the upstream side of the acid-based chemical solution supply path 26a. The acid-based chemical solution supply source 26b is, for example, a cabinet, a circulation pipeline, etc. that can generate an acid-based chemical solution.

[0075] The constant pressure valve 26d adjusts the flow rate of the acid-based chemical solution supplied to the first supply path 22 based on the flow rate of the acid-based chemical solution measured by the flow meter 26e. That is, the constant pressure valve 26d performs feedback control based on the flow rate of the acid-based chemical solution measured by the flow meter 26e.

[0076] A filter 28 and a concentration meter 29 are provided on the downstream side of the confluence section 27 in the first supply path 22. The filter 28 removes contaminants such as particles contained in the DIW flowing in the first supply path 22 and the acid-based chemical solution flowing in the acid-based chemical solution supply path 26a. The concentration meter 29 measures the pH of the DIW flowing in the first supply path 22.

[0077] In addition, the DIW whose pH has been adjusted by mixing with an acidic chemical solution in the confluence section 27 is stored in the tank 23. A second supply path 24 is connected to the bottom of the tank 23.

[0078] In addition, the tank 23 is connected to the discharge section DR via a valve 31. Thus, the control unit 19 (refer to Figure 1 ) can control the valve 31 to discharge the DIW in the tank 23 to the discharge section DR when replacing the DIW in the tank 23 or the like. In addition, the exhaust gas in the tank 23 is connected to the ozone gas removal section 46 via an exhaust pipe line 201. The exhaust pipe line 201 has a valve 202 and a check valve 203. The ozone gas removal section 46 renders the ozone gas harmless and discharges the harmless ozone gas to the outside from the exhaust gas section EXH.

[0079] The second supply path 24 is provided between the tank 23 and a plurality of branch sections 50 and successively includes a mixing section 32, a pump 33, a filter 34, a flow meter 35, a concentration meter 36, a pressure gauge 37, and a valve 38 from the upstream side. The pump 33 is an example of a pressurizing section. In addition, an ozone gas supply path 39 is connected to the mixing section 32.

[0080] The ozone gas supply path 39 supplies ozone gas to the mixing section 32. The ozone gas supply path 39 successively includes an ozone gas generation section 40, a filter 41, a valve 42, and a check valve 43 from the upstream side.

[0081] The ozone gas generation section 40 generates ozone gas from oxygen by a known technique. The oxygen that becomes the raw material of the ozone gas is supplied to the ozone gas generation section 40 from an oxygen supply section 44. The oxygen supply section 44 successively includes an oxygen supply source 44b, a constant pressure valve 44c, and a valve 44d from the upstream side of the oxygen supply path 44a. The oxygen supply source 44b is, for example, a tank storing oxygen.

[0082] In addition, although not shown in Figure 2 , a cooling water supply section for supplying cooling water and a cooling water discharge section for discharging the used cooling water are connected to the ozone gas generation section 40.

[0083] The filter 41 removes contaminants such as particles contained in the ozone gas flowing in the ozone gas supply path 39. The check valve 43 prevents the ozone gas from flowing back from the mixing section 32.

[0084] In addition, the ozone water generation section 5 of the embodiment is connected to the ozone gas removal section 46 via a valve 45. The ozone gas removal section 46 renders the ozone gas harmless and discharges the harmless ozone gas to the outside from the exhaust gas section EXH.

[0085] Accordingly, when the ozone gas generation unit 40 is started or in other situations where ozone gas of sufficient quality cannot be generated, the control unit 19 can make the valve 45 open, enabling the ozone gas removal unit 46 to render harmless the ozone gas of insufficient quality.

[0086] Therefore, according to the embodiment, only ozone gas of sufficient quality can be supplied to the mixing unit 32, so ozone water of good quality can be generated.

[0087] The mixing unit 32 adjusts the pH and mixes the ozone gas supplied from the ozone gas supply path 39 into the liquid of the DIW flowing in the second supply path 24, dissolving ozone in the DIW. For example, the mixing unit 32 can dissolve ozone in the pH-adjusted DIW by the bubbling method using a bubbler with open pores or the injection method of blowing ozone gas into a high-speed water flow.

[0088] The mixing unit 32 of the embodiment is not limited to a device that dissolves ozone in DIW by the bubbling method or the injection method. For example, ozone gas can also be mixed into DIW by a membrane dissolution method using a permeable membrane.

[0089] The pump 33 pressurizes the mixed liquid in which ozone is dissolved in the DIW to a pressure higher than the atmospheric pressure. In this way, by pressurizing the mixed liquid in which ozone is dissolved in the DIW, ozone water with a given ozone concentration can be efficiently generated.

[0090] This is because the mole fraction M of the ozone gas dissolved in the DIW as the raw material liquid can be estimated according to Henry's law shown in the following formula (1). In this Henry's law, the mole fraction M of the dissolved ozone gas is proportional to the partial pressure P of ozone in the gas.

[0091] M = H -1 ·P...(1)

[0092] H: Henry's constant

[0093] Moreover, in the embodiment, by using the pump 33 to pressurize the ozone water in the second supply path 24, the ozone water can be evenly supplied to a plurality of first treatment units 16.

[0094] The filter 34 removes contaminants such as particles contained in the ozone water flowing in the second supply path 24. In addition, an exhaust pipeline is connected to the filter 34, and this exhaust pipeline exhausts the gas mixed in the ozone water and returns it to the tank 23, but the illustration of this exhaust pipeline is omitted.

[0095] The concentration meter 36 measures the ozone concentration of the ozone water flowing in the second supply path 24. The control unit 19 adjusts the ozone concentration of the ozone water generated by the ozone water generation unit 5 based on the ozone concentration of the ozone water measured by the concentration meter 36.

[0096] For example, when the ozone concentration of the ozone water measured by the concentration meter 36 is lower than a given ozone concentration, the control unit 19 increases the flow rate of the acidic chemical solution supplied from the acidic chemical solution supply unit 26. As a result, the pH of the DIW supplied from the first supply path 22 decreases, so that the ozone concentration of the ozone water generated by the ozone water generation unit 5 can be increased.

[0097] In addition, when the ozone concentration of the ozone water measured by the concentration meter 36 is lower than a given ozone concentration, the control unit 19 may increase at least one of the flow rate and the concentration of the ozone gas supplied from the ozone gas supply path 39.

[0098] As a result, the amount of ozone molecules mixed in the mixing unit 32 increases, so that the ozone concentration of the ozone water generated by the ozone water generation unit 5 can be increased.

[0099] On the other hand, when the ozone concentration of the ozone water measured by the concentration meter 36 is higher than a given ozone concentration, the control unit 19 decreases the flow rate of the acidic chemical solution supplied from the acidic chemical solution supply unit 26.

[0100] As a result, the pH of the DIW supplied from the first supply path 22 rises, so that the ozone concentration of the ozone water generated by the ozone water generation unit 5 can be decreased.

[0101] In addition, when the ozone concentration of the ozone water measured by the concentration meter 36 is higher than a given ozone concentration, the control unit 19 may decrease at least one of the flow rate and the concentration of the ozone gas supplied from the ozone gas supply path 39.

[0102] As a result, the amount of ozone molecules mixed in the mixing unit 32 decreases, so that the ozone concentration of the ozone water generated by the ozone water generation unit 5 can be decreased.

[0103] In this way, in the embodiment, based on the ozone concentration of the ozone water measured by the concentration meter 36, feedback control is performed on the ozone concentration of the ozone water generated by the ozone water generation unit 5. As a result, ozone water with a given ozone concentration can be stably supplied to the first processing unit 16.

[0104] The pressure gauge 37 measures the pressure of the ozone water flowing in the second supply path 24 (hereinafter, appropriately referred to as "supply pressure"). The control unit 19 adjusts the driving pressure of the pump 33 when pressurizing the ozone water by the pump 33 based on the supply pressure of the ozone water measured by the pressure gauge 37.

[0105] Downstream of the ratio valve 38 in the second supply path 24, the second supply path 24 branches out in parallel. Further, a third supply path 60 branches out from a branch portion 50 of the second supply path 24 that branches out in parallel, and the third supply path 60 is connected to the first processing unit 16.

[0106] In Figure 2 In the example of, the second supply path 24 branches out in a three-parallel manner, and the branched second supply paths 24 supply ozone water to two first processing units 16 respectively.

[0107] The third supply path 60 successively includes a constant pressure valve 61, a flow meter 62, and a valve 63 from the upstream side. The constant pressure valve 61 adjusts the flow rate of the ozone water flowing in the third supply path 60 based on the flow rate of the ozone water measured by the flow meter 62. That is, the constant pressure valve 61 performs feedback control based on the flow rate of the ozone water measured by the flow meter 62.

[0108] A connection portion 64 is provided on the downstream side of the valve 63 in the third supply path 60. Moreover, a rinse liquid supply path 7 is connected to the connection portion 64. The rinse liquid supply path 7 supplies DIW to the first processing unit 16 via the connection portion 64 and the downstream side of the connection portion 64 in the third supply path 60.

[0109] The rinse liquid supply path 7 successively includes a DIW supply source 7a, a valve 7b, and a flow meter 7d from the upstream side. The DIW supply source 7a is, for example, a tank storing DIW. The DIW stored in the DIW supply source 7a is an example of the rinse liquid.

[0110] The constant pressure valve 7c adjusts the flow rate of the DIW flowing in the rinse liquid supply path 7 based on the flow rate of the DIW measured by the flow meter 7d. That is, the constant pressure valve 7c performs feedback control based on the flow rate of the DIW measured by the flow meter 7d.

[0111] In addition, the first processing unit 16 is connected to a discharge portion DR via a first discharge path 65 and a second discharge path 66. Thereby, the processing liquid used for processing the wafer W in the first processing unit 16 can be discharged to the discharge portion DR.

[0112] In each of the first discharge path 65 and the second discharge path 66, ozone water for processing the wafer W flows inside the first processing unit 16. The first discharge path 65 and the second discharge path 66 have different diameters. That is, the second discharge path 66 has a smaller diameter than the first discharge path 65. Therefore, in the second discharge path 66, the ozone water flows at a flow rate smaller than the flow rate of the ozone water flowing in the first discharge path 65.

[0113] The first discharge path 65 successively includes a valve 65a and a switching section 65b from the upstream side, and is connected to the discharge section DR. The second discharge path 66 successively includes a valve 66a and a switching section 66b from the upstream side, and is connected to the discharge section DR.

[0114] The switching section 65b and the switching section 66b are connected to a recovery tank 68 via a recovery path 67. The switching section 65b switches the inflow destination of the ozone water flowing in the first discharge path 65 between the discharge section DR and the recovery path 67. The switching section 66b switches the inflow destination of the ozone water flowing in the second discharge path 66 between the discharge section DR and the recovery path 67. The recovery tank 68 temporarily stores the ozone water flowing in from the recovery path 67, that is, the used ozone water.

[0115] In addition, the recovery tank 68 is connected to the upstream side of the mixing section 32 in the second supply path 24 via a valve 69. Thus, the used ozone water can be returned to the front of the mixing section 32. Therefore, according to the embodiment, the used ozone water can be reused to generate the ozone water to be further used, and thus the ozone water generation section 5 can efficiently generate ozone water. In addition, the exhaust gas in the recovery tank 68 can also be connected to the ozone gas removal section 46 via an exhaust pipeline (not shown) provided with a valve (not shown) and a check valve (not shown).

[0116] As described above, in the embodiment, after the ozone gas is mixed into the DIW by the mixing section 32 to generate ozone water, the ozone water is pressurized to a pressure higher than the atmospheric pressure by the pump 33. Thus, high-concentration ozone water can be efficiently generated. Therefore, according to the embodiment, the wafer W can be efficiently processed using the ozone water.

[0117] In addition, in the substrate processing system 1 of the embodiment, a plurality of second supply paths 24 are connected to the tank 23 of the ozone water generation section 5 via a circulation path 70.

[0118] Thus, the ozone water not used in the first processing unit 16 can be returned to the ozone water generation section 5 via the circulation path 70. Therefore, according to the embodiment, the unused ozone water can be effectively utilized to generate the ozone water to be further used, and thus the ozone water generation section 5 can efficiently generate ozone water.

[0119] In addition, in the circulation path 70, a valve 72 and a back pressure valve 73 are successively provided from the upstream side.

[0120] <Structure of the First Processing Unit>

[0121] Next, with reference to Figure 3 and Figure 4 , the structure of the first processing unit 16 will be described. Figure 3It is a schematic diagram showing the structural example of the first processing unit 16 of the embodiment. Figure 4 It is a diagram showing the state in which the processing container 80 of the first processing unit 16 of the embodiment is separated.

[0122] As Figure 3 and Figure 4 shown, the first processing unit 16 includes a processing container 80, a liquid supply unit 90, a liquid discharge unit 100, and a recovery cup 110. The liquid supply unit 90 is an example of an ozone water supply unit and a rinse liquid supply unit. The liquid discharge unit 100 is an example of an ozone water discharge unit.

[0123] The processing container 80 is configured to be separable into a first container member 80a and a second container member 80b. The first container member 80a includes a placement portion 81, a support column portion 82, a lifting mechanism 83, a heater 84, a lifting pin 85, and a sealing member 86.

[0124] The placement portion 81 has a substantially circular plate shape and can horizontally place the wafer W. A weir portion 81a is provided in the area of the placement portion 81 where the wafer W is placed. The weir portion 81a is arranged to stand up from the peripheral portion of the area of the placement portion 81 where the wafer W is placed, and contacts the end portion of the wafer W to fix the position of the wafer W.

[0125] The support column portion 82 is a member extending in the vertical direction, and the root end portion is supported by the lifting mechanism 83 so as to be movable in the vertical direction, and the placement portion 81 is horizontally supported at the front end portion. The lifting mechanism 83 moves the support column portion 82 in the vertical direction.

[0126] The first container member 80a uses the lifting mechanism 83 to move the support column portion 82 in the vertical direction, thereby moving the placement portion 81 supported by the support column portion 82 in the vertical direction.

[0127] The heater 84 is a planar heater provided inside the placement portion 81, and heats the wafer W accommodated in the processing space S of the second container member 80b to a given temperature.

[0128] The lifting pin 85 is arranged to penetrate the placement portion 81 and is configured to be movable up and down by a lifting mechanism (not shown).

[0129] Moreover, the lifting pin 85 supports the wafer W when the wafer W is placed on the placement portion 81 (refer to Figure 4 ). For example, three lifting pins 85 are provided on the placement portion 81 and are arranged at intervals of 120 (degrees) in the circumferential direction.

[0130] The sealing member 86 is arranged so as to stand up integrally at the peripheral portion of the mounting portion 81. When the second container member 80b abuts against the mounting portion 81, the sealing member 86 is pressed by the second container member 80b to seal the processing space S of the second container member 80b. As the sealing member 86, for example, a metal gasket or the like can be used.

[0131] The second container member 80b has a top portion 87 facing the mounting portion 81 and a side wall portion 88 extending downward from the top portion 87. The second container member 80b forms an opening portion at the lower part by the top portion 87 and the side wall portion 88, and has a substantially cylindrical portion in which the processing space S is formed inside.

[0132] A lifting mechanism 89 is connected to the second container member 80b. The lifting mechanism 89 moves the second container member 80b in the vertical direction.

[0133] When the processing container 80 described so far feeds in and out the wafer W, the mounting portion 81 and the second container member 80b are moved by the lifting mechanisms 83 and 89, as Figure 4 shown, the mounting portion 81 and the second container member 80b can be separated from each other. In a state where the mounting portion 81 and the second container member 80b are separated, the opening portion of the second container member 80b is opened, and the wafer W is transferred between the lifting pins 85 and the substrate transfer device 18 through the gap between the mounting portion 81 and the second container member 80b.

[0134] On the other hand, when the processing container 80 processes the wafer W, the mounting portion 81 and the second container member 80b are moved by the lifting mechanisms 83 and 89, as Figure 3 shown, by bringing the second container member 80b into contact with the mounting portion 81, the opening portion of the second container member 80b is closed. Thus, in the processing container 80, the processing space S of the second container member 80b is sealed.

[0135] The liquid supply unit 90 is arranged on the top portion 87 of the second container member 80b and supplies ozone water and a rinsing liquid to the processing space S. The liquid supply unit 90 includes a mask member 91 that covers the wafer W placed on the mounting portion 81 and a supply pipe 92 provided on the mask member 91.

[0136] The supply pipe 92 is connected to the third supply path 60 of the processing liquid supply path 21. The supply port 92a of the supply pipe 92 is provided at a position corresponding to the central portion of the wafer W on the mask member 91. Moreover, the supply pipe 92 supplies ozone water from the supply port 92a to the central portion of the wafer W. Thus, in the gap between the mask member 91 and the wafer W, a flow of ozone water is formed from the central portion of the wafer W to the outer peripheral portion of the wafer W along the bottom surface of the mask member 91.

[0137] In addition, the supply pipe 92 is connected to the rinse liquid supply path 7 via the downstream side of the connection portion 64 in the third supply path 60 and the connection portion 64. Moreover, the supply pipe 92 supplies DIW, which is the rinse liquid, from the supply port 92a to the central portion of the wafer W. The DIW supplied from the supply pipe 92 is used for the rinse process of the wafer W.

[0138] The liquid discharge portion 100 is disposed at the top 87 of the second container member 80b and is connected to the first discharge path 65 and the second discharge path 66. The liquid discharge portion 100 discharges the ozone water and the rinse liquid that are supplied from the liquid supply portion 90 to the processing space S and have passed through the processing space S from the processing container 80 to the first discharge path 65 and the second discharge path 66.

[0139] The recovery cup 110 is disposed so as to surround the placement portion 81, and collects the processing liquid flowing down from the gap between the placement portion 81 and the second container member 80b through the placement portion 81. A drain port (not shown) is formed at the bottom of the recovery cup 110, and the processing liquid collected by the recovery cup 110 is discharged from the drain port to the outside of the first processing unit 16.

[0140] When processing the wafer W in the first processing unit 16 described so far, first, the wafer W is placed on the placement portion 81 of the first container member 80a. Next, the placement portion 81 and the second container member 80b are moved by the lifting mechanism 83 and the lifting mechanism 89 to close the opening portion of the second container member 80b. Thereby, the processing space S of the second container member 80b is sealed.

[0141] Next, the liquid supply portion 90 supplies ozone water to the sealed processing space S and fills the processing space S with the ozone water.

[0142] Here, in the embodiment, in a state where the processing space S is filled with ozone water, the ozone water is pressurized by the pump 33 (see Figure 2 ) on the upstream side of the liquid supply portion 90 to increase the supply pressure of the ozone water supplied to the processing space S. Thereby, the ozone water inside the processing space S can be pressurized, for example, to a pressure higher than the atmospheric pressure, so that it is possible to suppress the decrease in the ozone concentration of the ozone water around the wafer W due to the pressure drop of the ozone water inside the processing space S.

[0143] That is, in the embodiment, by making the ozone water inside the processing space S at a high pressure, it is possible to maintain the concentration of the ozone water around the wafer W.

[0144] Therefore, according to the embodiment, the wafer W can be efficiently processed using ozone water.

[0145] In addition, in the embodiment, the wafer W is covered with the mask member 91 of the liquid supply unit 90, and ozone water is supplied from the supply pipe 92 provided in the mask member 91 to the wafer W. Thus, the gap between the wafer W and the mask member 91 can be filled with fresh ozone water that has not been inactivated, so that the wafer W can be processed more efficiently with ozone water.

[0146] In addition, in the embodiment, the supply pipe 92 supplies ozone water from the supply port 92a provided at the position corresponding to the central portion of the wafer W in the mask member 91 to the central portion of the wafer W. Thus, in the gap between the mask member 91 and the wafer W, a flow of ozone water from the central portion of the wafer W to the outer peripheral portion of the wafer W is formed along the bottom surface of the mask member 91, and bubbles are removed from the gap between the mask member 91 and the wafer W by using this flow of ozone water.

[0147] Therefore, according to the embodiment, it is possible to suppress a decrease in the processing performance of the wafer W caused by bubbles in the ozone water.

[0148] <Structure of the Second Processing Unit>

[0149] Next, with reference to Figure 5 , the structure of the second processing unit 17 will be described. Figure 5 is a schematic diagram showing a structural example of the second processing unit 17 of the embodiment. As Figure 5 shown, the second processing unit 17 includes a chamber 120, a substrate holding mechanism 130, a liquid supply unit 140, and a recovery cup 150.

[0150] The chamber 120 houses the substrate holding mechanism 130, the liquid supply unit 140, and the recovery cup 150. An FFU 121 is provided at the top of the chamber 120. The FFU 121 forms a downward flow in the chamber 120.

[0151] The substrate holding mechanism 130 includes a holding portion 131, a support column portion 132, and a drive portion 133. The holding portion 131 horizontally holds the wafer W. The support column portion 132 is a member extending in the vertical direction, and the root end portion is rotatably supported by the drive portion 133 and horizontally supports the holding portion 131 at the front end portion. The drive portion 133 rotates the support column portion 132 around the vertical axis.

[0152] This substrate holding mechanism 130 rotates the holding portion 131 supported by the support column portion 132 by rotating the support column portion 132 using the drive portion 133, thereby rotating the wafer W held by the holding portion 131.

[0153] The liquid supply unit 140 supplies various processing liquids to the wafer W held by the substrate holding mechanism 130. The liquid supply unit 140 is connected to the cleaning liquid supply source 142a via the valve 141a. The cleaning liquid supplied from the cleaning liquid supply source 142a is a liquid for the cleaning process of the wafer W. The cleaning liquid is, for example, SC-1 (an aqueous solution containing ammonia and hydrogen peroxide), etc.

[0154] In addition, the liquid supply unit 140 is connected to the rinse liquid supply source 142b via the valve 141b. The rinse liquid supplied from the rinse liquid supply source 142b is a liquid for the rinse process of the wafer W, and is, for example, DIW, etc.

[0155] The recovery cup 150 is arranged so as to surround the holding unit 131, and collects the processing liquid scattered from the wafer W due to the rotation of the holding unit 131. A drain port 151 is formed at the bottom of the recovery cup 150, and the processing liquid collected by the recovery cup 150 is discharged to the outside of the second processing unit 17 from this drain port 151. In addition, an exhaust port 152 for discharging the gas supplied from the FFU 121 to the outside of the second processing unit 17 is formed at the bottom of the recovery cup 150.

[0156] <Process flow of substrate processing>

[0157] Next, with reference to Figure 6 and Figure 7 , the process flow of substrate processing in the embodiment will be described. Figure 6 is a flowchart showing the process flow of substrate processing performed by the substrate processing system 1 of the embodiment. In the substrate processing system 1 of the embodiment, the processes of steps S102 to S103 shown in Figure 6 are performed in the first processing unit 16. In addition, in the substrate processing system 1, the processes of steps S105 to S108 shown in Figure 6 are performed in the second processing unit 17. ]

[0158] First, the control unit 19 controls the substrate transfer devices 13, 18, etc., and sends the wafer W into the first processing unit 16 (step S101). In the process of sending the wafer W into the first processing unit 16, first, the wafer W is placed on the placement portion 81 of the first container member 80a. Next, using the lifting mechanisms 83, 89, the placement portion 81 and the second container member 80b are moved to close the opening of the second container member 80b. Thereby, the processing space S of the second container member 80b is sealed.

[0159] Next, the control unit 19 controls the first processing unit 16, etc., and performs ozone water treatment for treating the wafer W with ozone water (step S102). Details of the ozone water treatment will be described later.

[0160] Next, the control unit 19 controls the first processing unit 16 and the like to perform a rinsing process of the wafer W using a rinsing liquid such as DIW (step S103). Details of this rinsing process will be described later.

[0161] Next, the control unit 19 controls the substrate transfer device 18 and the like to send out the wafer W from the first processing unit 16 (step S104), and sends the sent-out wafer W into the second processing unit 17 (step S105).

[0162] Next, the control unit 19 controls the liquid supply unit 140 provided in the second processing unit 17 to perform a cleaning process of the wafer W using a cleaning liquid such as SC-1 (aqueous solution containing ammonia and hydrogen peroxide) (step S106). Then, the control unit 19 controls the liquid supply unit 140 provided in the second processing unit 17 to perform a rinsing process of the wafer W using a rinsing liquid such as DIW (step S107). Then, the control unit 19 controls the second processing unit 17 to perform a drying process of the wafer W (for example, spin drying) (step S108).

[0163] Next, the control unit 19 controls the substrate transfer devices 13, 18 and the like to send out the wafer W from the second processing unit 17 (step S109), and sends the sent-out wafer W back to the front-opening wafer cassette C. Thus, a series of processes for the wafer W is completed.

[0164] Figure 7 It is a flowchart showing the process of ozone water treatment performed by the substrate processing system of the embodiment. Figure 7 The ozone water treatment shown corresponds to Figure 6 step S102.

[0165] First, the control unit 19 controls the first processing unit 16 and the like to supply ozone water from the liquid supply unit 90 to the closed processing space S, and fill the processing space S with ozone water (step S111). At this time, the supply flow rate of ozone water supplied to the processing space S can be, for example, about 2 L / min to 5 L / min. In addition, the supply pressure of ozone water supplied to the processing space S can be, for example, about 200 kPa. In addition, the ozone concentration of the ozone water supplied to the processing space S can be, for example, 0 mg / L to 150 mg / L.

[0166] In addition, in the process of step S111, the control unit 19 controls the valve 65a of the first discharge path 65 and the valve 66a of the second discharge path 66 to be in an open state until the processing space S is filled with ozone water supplied from the liquid supply unit 90. Then, the control unit 19 causes the ozone water to flow in the first discharge path 65 and the second discharge path 66. As a result, the flow rate of the ozone water discharged from the processing space S to the first discharge path 65 and the second discharge path 66 increases, so that bubbles and the like contained in the ozone water in the processing space S can be quickly discharged to the outside of the processing space S.

[0167] Then, when the processing space S is filled with ozone water, the control unit 19 controls the pump 33 to pressurize the ozone water filling the processing space S, so as to increase the supply pressure of the ozone water to the processing space S (step S112). At this time, the supply flow rate of the ozone water supplied to the processing space S can be, for example, about 0.1 L / min. In addition, the supply pressure of the ozone water supplied to the processing space S can be, for example, about 1 MPa to 2 MPa. In addition, the ozone concentration of the ozone water supplied to the processing space S can be about 100 mg / L to 1500 mg / L.

[0168] In the embodiment, the control unit 19 can pressurize the ozone water inside the processing space S to a pressure higher than the atmospheric pressure, for example. Thereby, it is possible to suppress a decrease in the ozone concentration of the ozone water around the wafer W due to a decrease in the pressure of the ozone water inside the processing space S.

[0169] That is, in the embodiment, by making the ozone water inside the processing space S at a high pressure, the concentration of the ozone water around the wafer W can be maintained, so that the wafer W can be efficiently processed using the ozone water.

[0170] In addition, in the process of step S112, when the control unit 19 increases the supply pressure of the ozone water supplied to the processing space S, it controls the valve 65a of the first discharge path 65 from an open state to a closed state, and maintains the valve 66a of the second discharge path 66 in an open state. Then, the control unit 19 causes the ozone water to flow only in the second discharge path 66. As a result, the flow rate of the ozone water discharged from the processing space S only to the second discharge path 66 decreases, so that the pressure of the ozone water inside the processing space S is maintained at a high pressure, and the ozone in the ozone water is difficult to decompose. Therefore, according to the embodiment, the wafer W can be efficiently processed using high-concentration ozone water.

[0171] Next, the control unit 19 controls the heater 84 to heat the wafer W to a given temperature (step S113). Thereby, the ozone water treatment of the wafer W can be carried out in a high-temperature environment, so that the treatment performance of the ozone water on the wafer W can be improved. In addition, the control unit 19 can heat the wafer W using the heater 84 at least when increasing the supply pressure of the ozone water supplied to the processing space S.

[0172] Then, after the elapse of a given ozone water treatment time, the control unit 19 controls the pump 33 to decompress the ozone water filling the treatment space S (step S114). At this time, the supply pressure for supplying ozone water to the treatment space S can be, for example, about 200 kPa. In addition, the supply flow rate for supplying ozone water to the treatment space S can be, for example, about 2 L / min to 5 L / min.

[0173] Then, the control unit 19 stops the heater 84 to stop heating the wafer W (step S115), and ends a series of processes related to ozone water treatment.

[0174] Figure 8 It is a flowchart showing the process of the rinse process executed by the substrate processing system 1 of the embodiment. Figure 8 The shown rinse process corresponds to Figure 6 step S103.

[0175] After the ozone water treatment ends, the control unit 19 controls the first processing unit 16 and the like to supply DIW as a rinse liquid from the liquid supply unit 90 to the sealed treatment space S, and replaces the ozone water filling the treatment space S with DIW (step S121). At this time, the supply flow rate for supplying DIW to the treatment space S can be, for example, about 2 L / min to 5 L / min. In addition, the supply pressure for supplying DIW to the treatment space S can be, for example, about 200 kPa.

[0176] In addition, in the process of step S121, the control unit 19 controls the valve 65a of the first discharge path 65 and the valve 66a of the second discharge path 66 to be in an open state until the ozone water filling the treatment space S is replaced with DIW. Moreover, the control unit 19 causes the DIW to flow in the first discharge path 65 and the second discharge path 66. As a result, the flow rate of the DIW discharged from the treatment space S to the first discharge path 65 and the second discharge path 66 increases, so that the replacement with DIW can be speeded up.

[0177] Next, the control unit 19 controls the first processing unit 16 and the like to coat the DIW supplied to the treatment space S from the liquid supply unit 90 on the wafer W (that is, the DIW covers a layer on the surface of the wafer due to surface tension) (step S122).

[0178] Specifically, the control unit 19 reduces the flow rate of the DIW supplied from the liquid supply unit 90 to the treatment space S. As a result, the supplied DIW stays on the upper surface of the wafer W due to surface tension, and the DIW accumulates on the upper surface of the wafer W to form a layer of DIW (so-called puddle).

[0179] The wafer W coated with DIW through the processing so far is sent out from the processing container 80 of the first processing unit 16 by the substrate transfer device 18 in the above step S104. Thereby, drying of the wafer W during transfer can be suppressed.

[0180] <Modification Example>

[0181] Next, with reference to Figure 9 and Figure 10 , a modification example of the embodiment will be described. Figure 9 FIG. is a schematic diagram showing the piping structure of the substrate processing system 1 according to the modification example of the embodiment.

[0182] As Figure 9 shown, the piping structure of the third supply path 60 of the substrate processing system 1 according to the modification example is different from that of the embodiment. Specifically, the branch path 8 branches from the branch point 51 provided on the upstream side in the third supply path, and this branch path 8 is connected to the first processing unit 16.

[0183] The branch path 8 successively includes a constant pressure valve 8a, a flow meter 8b, and a valve 8c from the upstream side. The constant pressure valve 8a adjusts the flow rate of the ozone water flowing in the branch path 8 based on the flow rate of the ozone water measured by the flow meter 8b. That is, the constant pressure valve 8a performs feedback control based on the flow rate of the ozone water measured by the flow meter 8b.

[0184] Figure 10 FIG. is a schematic diagram showing a structural example of the first processing unit 16 according to the modification example of the embodiment. As Figure 10 shown, the structure of the liquid supply unit 90 of the first processing unit 16 according to the modification example is different from that of the embodiment. Specifically, the liquid supply unit 90 further includes a plurality of other supply ports 93 and a storage unit 94.

[0185] The plurality of other supply ports 93 are provided at positions on the outer peripheral side of the mask member 91 relative to the supply pipe 92. The plurality of other supply ports 93 supply ozone water to the outer peripheral portion of the wafer W at positions on the outer peripheral side of the mask member 91 relative to the supply pipe 92. The plurality of other supply ports 93 supply the ozone water stored in the storage unit 94 to the outer peripheral portion of the wafer W. In addition, the outer peripheral side refers to the outer side in the radial direction of the wafer W.

[0186] The storage unit 94 is provided at a position on the outer peripheral side of the supply pipe 92 of the mask member 91. The storage unit 94 is connected to the branch path 8 and stores the ozone water supplied from the branch path 8. The storage unit 94 supplies ozone water to the plurality of other supply ports 93.

[0187] Thus, in the modified example, a plurality of other supply ports 93 provided at a position on the outer peripheral side of the mask member 91 relative to the supply pipe 92 supply ozone water to the outer peripheral portion of the wafer W. Thereby, not only can fresh ozone water that has not been deactivated be supplied to the central portion of the wafer W, but also to the outer peripheral portion of the wafer W. Therefore, according to the modified example, the wafer W can be processed more efficiently using ozone water.

[0188] <Other Modified Examples>

[0189] In the above-described embodiment, an example where the liquid discharge unit 100 is connected to the first discharge path 65 and the second discharge path 66 is illustrated, but the liquid discharge unit 100 may be connected to one discharge path through which ozone water discharged from the processing space S flows. Additionally, a flow rate regulating valve may be provided in this discharge path.

[0190] Moreover, in the processing of the above step S111 (refer to Figure 7 ), the control unit 19 may also control the flow rate regulating valve to increase the discharge flow rate of ozone water discharged to the discharge path until the processing space S is filled with ozone water supplied from the liquid supply unit 90. As a result, the flow rate of ozone water discharged from the processing space S to the discharge path increases, so that bubbles and the like contained in the ozone water in the processing space S can be quickly discharged to the outside of the processing space S.

[0191] Furthermore, in the processing of the above step S112 (refer to Figure 7 ), when the supply pressure of ozone water supplied to the processing space S is increased, the control unit 19 may control the flow rate regulating valve to reduce the discharge flow rate of ozone water discharged to the discharge path. As a result, the flow rate of ozone water discharged from the processing space S to the discharge path decreases, so that the pressure of the ozone water inside the processing space S is maintained at a high pressure, and the ozone in this ozone water is difficult to decompose. Consequently, the wafer W can be processed efficiently using high-concentration ozone water.

[0192] As described above, the substrate processing apparatus (as an example, the substrate processing system 1) of the embodiment includes a processing container (as an example, the processing container 80), an ozone water supply unit (as an example, the liquid supply unit 90), an ozone water discharge unit (as an example, the liquid discharge unit 100), and a pressurizing unit (as an example, the pump 33). The processing container provides a processing space (as an example, the processing space S) that can accommodate a substrate (as an example, the wafer W) and is sealed during substrate processing. The ozone water supply unit supplies ozone water to the processing space. The ozone water discharge unit discharges ozone water from the processing space. The pressurizing unit pressurizes the ozone water at a position upstream of the ozone water supply unit. Thereby, the substrate can be processed efficiently using ozone water.

[0193] The processing container may also include a placement part (as an example, the placement part 81) for placing and accommodating the substrate in the processing space. The ozone water supply part may include a mask member (as an example, the mask member 91) covering the substrate placed on the placement part and a supply pipe (as an example, the supply pipe 92) provided on the mask member and supplying ozone water to the substrate. Thus, the substrate can be processed more efficiently with ozone water.

[0194] The supply pipe may also supply ozone water to the central part of the substrate from a supply port (as an example, the supply port 92a) provided at a position corresponding to the central part of the substrate on the mask member. Thus, a decrease in the processing performance of the wafer W caused by bubbles in the ozone water can be suppressed.

[0195] The ozone water supply part may also further include a plurality of other supply ports (as an example, the other supply ports 93), and the plurality of other supply ports are provided at positions on the mask member on the outer peripheral side of the supply pipe and supply ozone water to the outer peripheral part of the substrate. Thus, the substrate can be processed more efficiently with ozone water.

[0196] The substrate processing apparatus according to the embodiment may also include a control part (as an example, the control part 19). The control part may supply ozone water from the ozone water supply part to the processing space in a state where the substrate is accommodated in the processing space and the processing space is sealed, and fill the processing space with ozone water. The control part may, in a state where the processing space is filled with ozone water, pressurize the ozone water at a position upstream of the ozone water supply part using a pressurizing part to increase the supply pressure of the ozone water to the processing space. Thus, the substrate can be processed efficiently with ozone water.

[0197] The ozone water discharge part may also be connected to a first discharge path (as an example, the first discharge path 65) for the ozone water discharged from the processing space to flow and a second discharge path (as an example, the second discharge path 66) for the ozone water to flow at a flow rate smaller than the flow rate of the ozone water flowing in the first discharge path. The control part may cause the ozone water to flow in the first discharge path and the second discharge path until the processing space is filled with the ozone water supplied from the ozone water supply part. The control part may, when increasing the supply pressure of the ozone water supplied to the processing space in a state where the processing space is filled with ozone water, cause the ozone water to flow only in the second discharge path. Thus, the substrate can be processed more efficiently with ozone water.

[0198] The ozone water discharge section may also be connected to a discharge path provided with a flow control valve through which the ozone water discharged from the processing space flows. The control section may also control the flow control valve to increase the discharge flow rate of the ozone water discharged to the discharge path until the processing space is filled with the ozone water supplied from the ozone water supply section. The control section may also, when increasing the supply pressure of the ozone water supplied to the processing space in a state where the processing space is filled with the ozone water, control the flow control valve to reduce the discharge flow rate of the ozone water discharged to the discharge path. Thereby, the substrate can be processed more efficiently using the ozone water.

[0199] The substrate processing apparatus according to the embodiment may include a rinse liquid supply section (as an example, the liquid supply section 90) that supplies a rinse liquid (DIW as an example) to the processing space and a transfer mechanism (as an example, the substrate transfer device 18) that transfers the substrate. The control section may also, after the processing of the substrate using the ozone water in the processing space is completed, replace the ozone water filling the processing space with the rinse liquid. The control section may also, thereafter, coat the rinse liquid on the substrate. The control section may also, thereafter, control the transfer mechanism to send out the substrate coated with the rinse liquid from the processing container. Thereby, drying of the substrate during transfer can be suppressed.

[0200] The substrate processing apparatus according to the embodiment may also include a heater (as an example, the heater 84) provided in the processing container that heats the substrate housed in the processing space. The control section may also, at least when increasing the supply pressure of the ozone water supplied to the processing space, heat the substrate using the heater. Thereby, the substrate can be processed more efficiently using the ozone water.

[0201] The embodiments disclosed in the specification are illustrative in all respects and should not be considered restrictive. In fact, the above embodiments can be implemented in various ways. In addition, the above embodiments can be omitted, replaced, or changed in various ways without departing from the scope and gist of the invention.

Claims

1. A substrate processing apparatus, characterized in that, Comprising: A processing container capable of accommodating a substrate and providing a sealed processing space during the processing of the substrate; An ozone water supply unit for supplying ozone water to the processing space; An ozone water discharge unit for discharging the ozone water from the processing space; And A pressurizing unit for pressurizing the ozone water at a position upstream of the ozone water supply unit.

2. The substrate processing apparatus according to claim 1, wherein: The processing container includes a placement part for placing the substrate accommodated in the processing space, The ozone water supply unit includes: A mask member for covering the substrate placed on the placement part; and A supply pipe provided on the mask member for supplying ozone water to the substrate.

3. The substrate processing apparatus according to claim 2, wherein: The supply pipe supplies the ozone water to the central part of the substrate from a supply port provided at a position corresponding to the central part of the substrate on the mask member.

4. The substrate processing apparatus according to claim 3, wherein: The ozone water supply unit further includes a plurality of other supply ports provided at positions on the mask member on the outer peripheral side of the supply pipe for supplying ozone water to the outer peripheral part of the substrate.

5. The substrate processing apparatus according to claim 1, wherein: It includes a control unit, The control unit: In a state where the substrate is accommodated in the processing space and the processing space is sealed, supplies the ozone water from the ozone water supply unit to the processing space to fill the processing space with the ozone water, In a state where the processing space is filled with the ozone water, pressurizes the ozone water at a position upstream of the ozone water supply unit using the pressurizing unit to increase the supply pressure of the ozone water supplied to the processing space.

6. The substrate processing apparatus according to claim 5, wherein: The ozone water discharge unit is connected to a first discharge path and a second discharge path. The first discharge path allows the ozone water discharged from the processing space to flow, and the second discharge path allows the ozone water to flow at a flow rate smaller than the flow rate of the ozone water flowing in the first discharge path, The control unit: Causes the ozone water to flow in the first discharge path and the second discharge path until the processing space is filled with the ozone water supplied from the ozone water supply unit, When increasing the supply pressure of the ozone water supplied to the processing space in a state where the processing space is filled with the ozone water, causes the ozone water to flow only in the second discharge path.

7. The substrate processing apparatus according to claim 5, wherein: The ozone water discharge unit is connected to a discharge path provided with a flow rate regulating valve for the ozone water discharged from the processing space to flow, The control unit: Controls the flow rate regulating valve to increase the discharge flow rate of the ozone water discharged to the discharge path until the processing space is filled with the ozone water supplied from the ozone water supply unit, When the supply pressure of the ozone water supplied to the processing space is increased in a state where the processing space is filled with the ozone water, the flow control valve is controlled to reduce the discharge flow rate of the ozone water discharged to the discharge path.

8. The substrate processing apparatus according to claim 5, wherein Comprising: A rinse liquid supply unit that supplies a rinse liquid to the processing space; And A transfer mechanism that transfers the substrate, The control unit: After the processing of the substrate using the ozone water in the processing space is completed, the ozone water filling the processing space is replaced with the rinse liquid, After that, the rinse liquid is overlaid on the substrate, After that, the control unit controls the transfer mechanism to send out the substrate overlaid with the rinse liquid from the processing container.

9. The substrate processing apparatus according to claim 5, wherein: It includes a heater, the heater is provided in the processing container, and heats the substrate housed in the processing space, The control unit heats the substrate using the heater at least when increasing the supply pressure of the ozone water supplied to the processing space.

10. A substrate processing method, characterized in that, Comprising: Using a substrate processing apparatus, in a state where a substrate is housed in a processing space, supplying ozone water from an ozone water supply unit to the processing space to fill the processing space with the ozone water, wherein the substrate processing apparatus includes: a processing container that provides the processing space capable of housing the substrate and being sealed during the processing of the substrate; the ozone water supply unit that supplies the ozone water to the processing space; an ozone water discharge unit that discharges the ozone water from the processing space; and a pressurizing unit that pressurizes the ozone water at a position upstream of the ozone water supply unit; and In a state where the processing space is filled with the ozone water, pressurizing the ozone water using the pressurizing unit at a position upstream of the ozone water supply unit to increase the supply pressure of the ozone water supplied to the processing space.

11. The substrate processing method according to claim 10, wherein: The substrate processing apparatus includes a heater, the heater is provided in the processing container, and heats the substrate housed in the processing space, At least when increasing the supply pressure of the ozone water supplied to the processing space, the heater is used to heat the substrate.

12. A computer-readable storage medium, wherein: The storage medium non-temporarily records a program that enables a computer to implement the following steps: Using a substrate processing apparatus, in a state where a substrate is housed in a processing space, supplying ozone water from an ozone water supply unit to the processing space to fill the processing space with the ozone water, wherein the substrate processing apparatus includes: a processing container that provides the processing space capable of housing the substrate and being sealed during the processing of the substrate; the ozone water supply unit that supplies the ozone water to the processing space; an ozone water discharge unit that discharges the ozone water from the processing space; and a pressurizing unit that pressurizes the ozone water at a position upstream of the ozone water supply unit; and A step of pressurizing the ozone water by the pressurizing unit at a position upstream of the ozone water supply unit in a state where the treatment space is filled with the ozone water, so as to increase the supply pressure for supplying the ozone water to the treatment space.

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