Thinned wafer taking device
By designing the chip picking device of the chip pusher and the chip connector, the damage and adaptability problems during the wafer transfer process after thinning are solved, and efficient and low-damage wafer transfer and cleaning are achieved.
Patent Information
- Application Number
- CN202510547722.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-28
- Publication Date
- 2025-07-29
AI Technical Summary
The traditional chip picking method is inefficient for thinned wafers, which can easily cause rupture or damage, and the adaptability of conventional tools is poor, making it impossible to accurately adapt to wafers of different sizes.
A chip picking device including a chip pusher and a chip connector is designed. The chip pusher pushes the wafer through an arc-shaped abutment surface. The chip connector fixes and transfers the wafer through a receptacle slot, providing support and elasticity with FR4 or PTFE materials, reducing friction and damage.
It improves the chip removal efficiency, reduces the damage to wafers during the transfer process, enhances the adaptability to wafers of different sizes, and improves the yield rate.
Smart Images
Figure CN120388926A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of chip technology, and particularly to a wafer picking device for a thinned wafer. Background Art
[0002] In the semiconductor chip manufacturing process, wafer thinning is one of the key processes, the purpose of which is to reduce the wafer thickness to meet the requirements of chip miniaturization and high performance. However, after wafer thinning is completed, wafer picking and cleaning face many challenges.
[0003] The thinned wafer becomes thinner and more fragile. The traditional wafer picking method uses the immersion method to make the wafer peel off, which is inefficient and extremely likely to cause wafer breakage or damage, resulting in a reduced yield. The design of conventional wafer picking tools is not fine enough to accurately fit wafers of different sizes, and problems such as deviation and slipping are likely to occur during wafer picking. Summary of the Invention
[0004] This application provides a wafer picking device for a thinned wafer to solve the inconvenience encountered in the process of wafer transfer in related technologies.
[0005] In a first aspect, this application provides a wafer picking device for a thinned wafer, including a wafer pusher and a wafer receiver, wherein:
[0006] The wafer pusher includes a wafer pushing part, and the wafer pushing part has a contact surface that abuts against at least a part of the circumferential side wall of the wafer to be picked, so as to push the wafer from the thinning carrier device;
[0007] The wafer receiver includes a wafer receiving part, and the wafer receiving part has a receiving groove for accommodating at least a part of the circumferential side wall of the wafer. When the wafer pusher pushes the wafer to the edge of the thinning carrier device, it receives the wafer and transfers the wafer.
[0008] The conventional thinning process manufacturing flow is as follows: wax coating - melting the sticky wax on the heating table and evenly coating it on the carrier substrate with a tool to form a wax film with a thickness of 0.1 - 0.3 mm. Chip bonding - placing the wafer face down on the wax-coated carrier substrate, removing air bubbles to ensure close fitting. Curing - the thermoplastic sticky wax cools naturally, and the thermosetting sticky wax is heated and cured. Thinning - loading the combination (wafer and carrier substrate combination) into the thinning equipment, setting the parameters and starting thinning, and monitoring the thickness. Dewaxing - soaking the combination in a dewaxing solvent for 10 - 60 minutes, taking it out and rinsing it with deionized water or cleaning solution.
[0009] In the dewaxing step, the transfer of the wafer is to put the wafer combination into the cleaning device together. Due to the support of the carrier substrate, although the wafer is thinned, it is not easy to break during the transfer to the cleaning device. Then putting the combination into the solvent for soaking together is more likely to cause the wafer to shake and break, especially for the thinned wafer, resulting in a low qualification rate after wafer thinning.
[0010] The pusher part of the wafer picking device for the thinned wafer has an abutting surface that abuts at least partially against the circumferential side wall of the wafer to be picked, so as to push the wafer from the thinning carrier device. (Before pushing, heat the wax film to soften it). The abutting surface is aligned with the circular arc edge of the crystal, and it only takes a few seconds to push the wafer off the assembly. Then, when the pusher pushes the wafer to the edge of the thinning carrier device, the wafer is received by the bonding device, fixed in the receiving groove of the bonding device, and the wafer is transferred to the cleaning carrier device through the bonding device and soaked in the dewaxing solvent for cleaning.
[0011] The pusher can abut against at least part of the side wall of the wafer through the abutting surface, and then push the wafer to move on the thinning carrier device through the abutting surface, thus avoiding damaging the wafer caused by putting the carrier device and the wafer into the cleaning liquid together. Since the thinned wafer has low strength and is fragile and easy to be damaged, it is also easy to be damaged by the transfer device during its separate transfer process. Therefore, the bonding part has a receiving groove that accommodates at least part of the circumferential side wall of the wafer. When the pusher pushes the wafer to the edge of the thinning carrier device, the wafer is received, fixed in the receiving groove, and the wafer is transferred to the cleaning carrier device. The wafer can be transferred by a clamping method, reducing the damage to the wafer during the transfer process.
[0012] In some embodiments, the pusher part is arranged in an arc shape. Arranging it in an arc shape can increase the contact area between the abutting surface of the pusher part and the circumferential side surface of the crystal, making the force more uniform when pushing the wafer, making it easier to push the wafer, and reducing the damage to the wafer.
[0013] In some embodiments, the central angle of the arc of the pusher part is 150 - 180°. The central angle of the arc of the pusher part reflects the size of the abutting area between the abutting surface of the pusher part and the circumferential side wall of the crystal. When the central angle of the arc of the pusher part is within this range, it can increase the contact area between the pusher part and the wafer, making the force more uniform when pushing the wafer, making it easier to push the wafer. At the same time, when cooperating with the bonding part, it reduces the interference of the bonding part and is convenient for docking; and / or,
[0014] The radius of the arc is R1, and the radius of the wafer is R2. 0.2mm ≤ R1 - R2 ≤ 0.5mm. When the difference between the radius of the arc and the radius of the wafer is within this range, it can reduce the shaking of the wafer in the pusher during pushing, and at the same time reduce the friction between the abutting surface and the circumferential side wall of the crystal, reducing the breakage of the wafer.
[0015] In some embodiments, fillets are provided at both ends of the arc, and the radius of the fillet is R3. 3mm ≤ R3 ≤ 5mm. Providing fillets at both ends of the arc can reduce the damage to the wafer at both ends of the pusher part and reduce the risk of wafer breakage.
[0016] In some embodiments, the height of the wafer pushing portion is H1, and the height of the wafer is H0, where 0.05 mm ≤ H1 - H0 ≤ 0.5 mm. The difference between the height of the wafer pushing portion and the height of the wafer within this range can better push the wafer, such that the contact surface where the circumferential sidewall of the entire wafer abuts against the wafer pushing portion is lower than the abutting surface of the wafer pushing portion, thereby protecting the sidewall of the wafer and reducing damage to the wafer.
[0017] In some embodiments, the receiving groove includes a first groove wall and a second groove wall, wherein the first groove wall abuts against the upper surface of the wafer, and the second groove wall abuts against the lower surface of the wafer. The first groove wall and the second groove wall of the receiving groove provide a limiting function for the wafer, preventing the wafer from falling during the wafer picking process, providing a stable gripping force for the transfer of the wafer, ensuring good contact with the wafer while minimizing damage to the wafer, solving the problems of low efficiency in the traditional wafer picking method, easy wafer cracking and damage, and poor adaptability of the wafer picking tool, and significantly improving the wafer unloading speed and wafer picking efficiency.
[0018] In some embodiments, the length of the second groove wall is less than the length of the first groove wall, so as to provide a relief area at both ends for fitting with the carrier table when receiving the wafer, enabling the wafer to be translated from the carrier table to the receiving groove. This can make it easier for the wafer to enter the receiving groove and improve the wafer receiving efficiency.
[0019] In some embodiments, the receiving groove is arranged in an arc shape, wherein:
[0020] The central angle of the first groove wall is 150° to 180°. Within this range of the central angle of the first groove wall, it is convenient for wafer receiving, does not interfere with the pusher, reduces damage to the wafer, and at the same time provides a sufficient bearing area for the wafer, reducing the risk of the wafer falling; and / or,
[0021] The central angle of the second groove wall is 120° to 150°. Within this range of the central angle of the second groove wall, when abutting against the edge of the wafer thinning and carrying device, it can provide a relief space, making it easier for the wafer to enter the receiving groove and improving the wafer receiving efficiency.
[0022] In some embodiments, the thickness of the first groove wall is 2 mm to 3 mm. The thickness of the first groove wall within this range can provide sufficient strength for carrying the wafer; and / or,
[0023] The thickness of the second groove wall is 3 mm to 5 mm. The thickness of the second groove wall within this range can provide sufficient strength for carrying the wafer.
[0024] In some embodiments, the depth of the receiving groove is 0.5 mm to 1 mm. The depth of the receiving groove within this range can provide sufficient accommodation depth for the wafer, reducing the probability of the wafer falling during the transfer of the wafer; and / or,
[0025] The width of the receiving groove is 0.05mm to 0.5mm. When the width of the receiving groove is within this range, the shaking of the wafer in the receiving groove can be reduced, while reducing the friction between the wafer and the receiving groove, thereby reducing damage to the wafer.
[0026] It should be noted that the sheet pusher also includes a gripping body, which can be the same thickness as the sheet pushing part and be in a sheet shape, or it can be different in thickness from the sheet pushing part and be in a shape that is easy to hold, such as a gripping handle or a gripping ring.
[0027] It should be noted that the material of the pusher can be at least one of FR4 and PTFE, which can provide a certain support strength to facilitate pushing the wafer and have a certain elasticity to reduce damage to the wafer. The material of the grip body can be the same as or different from that of the pusher.
[0028] It should be noted that the wafer splicer also includes a transfer portion. The transfer portion can be of the same thickness as the splicing portion and be in the form of a sheet, or it can be of a different thickness than the transfer portion and be shaped for easy gripping, such as a handle or a gripping ring. The splicing portion can be made of at least one of FR4 and PTFE. These materials provide both a certain degree of support strength to facilitate wafer handling and a certain degree of elasticity to reduce damage to the wafer. The transfer portion can be made of the same material as the splicing portion or a different material. BRIEF DESCRIPTION OF THE DRAWINGS
[0029] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0030] Figure 1 This is a schematic diagram of the structure of a wafer pusher of a wafer removal device for thinned wafers according to an embodiment of the present application.
[0031] Figure 2 This is a structural diagram of a wafer pusher of a wafer removal device for thinned wafers according to an embodiment of the present application when pushing the wafer.
[0032] Figure 3 Schematic diagram of the wafer splicer structure of a wafer removal device for thinned wafers according to an embodiment of the present application.
[0033] Figure 4 Schematic diagram of the wafer splicer structure of a wafer removal device for thinned wafers according to an embodiment of the present application.
[0034] Figure 5Schematic structural diagram of the wafer picking device for the thinned wafer in one embodiment of the present application during wafer picking.
[0035] Explanation of the reference numerals in the drawings:
[0036] 100 Wafer picking device for the thinned wafer; 11 Pusher; 111 Pushing part; 1111 Contact surface; 112 Holding body; 12 Wafer receiver; 121 Wafer receiving part; 1211 Accommodating groove; 12111 First groove wall; 12112 Second groove wall; 122 Transfer part; 300 Wafer. Detailed implementation manners
[0037] In order to enable those skilled in the art to better understand the solution of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.
[0038] In the semiconductor chip manufacturing process, wafer thinning is one of the key processes, and its purpose is to reduce the wafer thickness to meet the requirements of chip miniaturization and high performance. However, after the wafer thinning is completed, wafer picking and cleaning face many challenges.
[0039] The thinned wafer becomes thinner and more fragile. The traditional wafer picking method uses the immersion method to make the wafer peel off, with low efficiency and extremely easy to cause wafer breakage or damage, resulting in a reduction in the yield rate. The design of conventional wafer picking tools is not fine enough to accurately adapt to wafers of different sizes, and problems such as deviation and slipping are likely to occur during wafer picking.
[0040] The sizes of ordinary ternary and quaternary compound wafers (such as InP, GaAs, etc.) are usually ≤ 4 inches. Compared with conventional silicon wafers, their hardness is usually only about half, which makes them more fragile in physical properties. Under normal conditions, the thickness of such wafers is generally several hundred micrometers, with certain mechanical properties and able to withstand a certain degree of external force and its own gravity.
[0041] However, when the ternary and quaternary compound wafers are thinned, the situation becomes intractable. The thinned thickness is between 80μm - 150μm. The extremely low hardness combined with the greatly reduced thickness makes its mechanical properties deteriorate sharply and it is extremely easy to break. For example, its tensile strength may drop suddenly from more than a dozen megapascals in the normal state to several megapascals, and it is difficult to withstand uneven external forces, collisions or vibrations.
[0042] Moreover, due to the small size of such wafers, it is rarely possible to be compatible with the automated equipment in the conventional silicon process. The automated equipment for the conventional silicon process is designed for silicon wafers with larger sizes and higher hardness. The control of force and precision in handling, processing and other links is completely inapplicable to the group III-V compound wafers. Therefore, many processes such as the transfer, cleaning, lithography, etc. after thinning have to rely on manual operations to complete. Although manual operations can, to a certain extent, finely control the force and position based on the experience of the operators, the efficiency is extremely low, and the consistency of product quality seriously depends on the state of the operators, making it difficult to stably guarantee the yield rate.
[0043] In view of this, the present application provides a wafer picking device for a thinned wafer to solve the inconvenience encountered in the wafer transfer process in the related art.
[0044] In the first aspect, as Figures 1 to 5 shown, the present application provides a wafer picking device 100 for a thinned wafer 300, including a pusher 11 and a wafer receiver 12, wherein:
[0045] The pusher 11 includes a pushing part 111, and the pushing part 111 has an abutting surface 1111 that abuts against at least a part of the circumferential side wall of the wafer 300 to be picked, so as to push the wafer 300 from the thinning carrier device.
[0046] The wafer receiver 12 includes a wafer receiving part 121, and the wafer receiving part 121 has a receiving groove 1211 for accommodating at least a part of the circumferential side wall of the wafer 300, and receives the wafer 300 when the pusher 11 pushes the wafer 300 to the edge of the thinning carrier device and transfers the wafer 300.
[0047] The production process of the conventional thinning process is as follows: wax coating - melting the sticky wax on a heating table and evenly coating it on the carrier substrate with a tool to form a wax film with a thickness of 0.01 - 0.03 mm. Chip bonding - placing the wafer 300 face down on the wax-coated carrier substrate, removing air bubbles to ensure close fitting. Curing - the thermoplastic sticky wax cools naturally, and the thermosetting sticky wax is cured by heating. Thinning - loading the combination (the combination of the wafer and the carrier substrate) onto the thinning equipment, setting the parameters and starting to thin, and monitoring the thickness. Dewaxing - soaking the combination in a dewaxing solvent for 10 - 60 minutes, and after taking it out, rinsing it with deionized water or a cleaning solution.
[0048] In the dewaxing step, the transfer of the wafer 300 is to put the combination of the wafer 300 into a cleaning device together. Due to the support of the carrier substrate, although the wafer 300 is thinned, it is not easy to be damaged during the transfer to the cleaning device. Then putting the combination into the solvent for soaking is more likely to cause the wafer 300 to shake and be damaged, especially for the thinned wafer 300, resulting in a low qualified rate of the wafer 300 after thinning.
[0049] The pusher part 111 of the wafer picking device for the thinned wafer 300 has a contact surface 1111 that abuts at least partially against the circumferential side wall of the wafer 300 to be picked up, so as to push the wafer 300 from the thinning carrier device. (Before pushing, heat the wax film to soften the wax film). The contact surface 1111 is aligned with the arc edge of the wafer 300, and the wafer 300 is pushed off from the assembly, which only takes a few seconds. Then, when the pusher 11 pushes the wafer 300 to the edge of the thinning carrier device, the wafer 300 is received by the bonding part 12, fixed in the receiving groove 1211 of the bonding part 12, and the wafer 300 is transferred to the cleaning carrier device by the bonding part 12 and soaked in the dewaxing solvent for cleaning.
[0050] The pusher 11 can abut against at least part of the side wall of the wafer 300 through the contact surface 1111, and then push the wafer 300 to move on the thinning carrier device through the contact surface 1111, so as to avoid damaging the wafer 300 caused by putting the carrier device and the wafer 300 into the cleaning liquid together. Since the thinned wafer 300 has low strength and is fragile and easy to be damaged, it is also easy to be damaged by the transfer device during its separate transfer. Therefore, the bonding part 121 has a receiving groove 1211 that can receive at least part of the circumferential side wall of the wafer 300. When the pusher 11 pushes the wafer 300 to the edge of the thinning carrier device, the wafer 300 is received, fixed in the receiving groove 1211, and the wafer 300 is transferred to the cleaning carrier device. The wafer 300 can be transferred by means of clamping, reducing the damage of the wafer 300 during the transfer process.
[0051] In combination with the first aspect, in some embodiments provided by the present application, the pusher part 111 is arranged in an arc shape. The arc-shaped arrangement can increase the contact area between the contact surface 1111 of the pusher part 111 and the circumferential side surface of the wafer 300, so that the force is more uniform when pushing the wafer 300, and it is easier to push the wafer 300, reducing the damage to the wafer 300.
[0052] In combination with the first aspect, in some embodiments provided by the present application, the central angle of the arc of the pusher part 111 is 150-180°. The central angle of the arc of the pusher part 111 reflects the size of the contact area between the contact surface 1111 of the pusher part 111 and the circumferential side wall of the wafer 300. When the central angle of the arc of the pusher part 111 is within this range, the contact area between the pusher part 111 and the wafer 300 can be increased, so that the force is more uniform when pushing the wafer 300, and it is easier to push the wafer 300. At the same time, when cooperating with the bonding part 121, the interference of the bonding part 121 is reduced, facilitating docking.
[0053] In combination with the first aspect, in some embodiments provided in the present application, the radius of the arc is R1, the radius of the wafer 300 is R2, 0.2mm≤R1~R2≤0.5mm, and the difference in the radius of the wafer 300 is within this range. The arc of the pushing portion 111 can reduce the shaking of the wafer 300 in the pusher 11 during pushing, and at the same time reduce the friction between the abutment surface 1111 and the circumferential side wall of the wafer 300, thereby reducing the damage of the wafer 300.
[0054] In combination with the first aspect, in some embodiments provided in the present application, chamfers are provided at both ends of the arc, and the radius of the chamfer is R3, 3mm≤R3≤5mm. The chamfers are provided at both ends of the arc to reduce the damage to the wafer 300 caused by the two ends of the push-piece part 111, thereby reducing the risk of damage to the wafer 300.
[0055] In combination with the first aspect, in some embodiments provided in the present application, the height of the pushing portion 111 is H1, the height of the wafer 300 is H0, 0.05mm≤H1-H0≤0.5mm, and the difference between the height of the pushing portion 111 and the height of the wafer 300 is within this range, which can better push the wafer 300, so that the contact surface between the circumferential side wall of the entire wafer 300 and the pushing portion 111 is lower than the contact surface 1111 of the pushing portion 111, thereby protecting the side wall of the wafer 300 and reducing damage to the wafer 300.
[0056] In conjunction with the first aspect, in some embodiments provided herein, the accommodating groove 1211 includes a first groove wall 12111 and a second groove wall 12112, wherein the first groove wall 12111 abuts against the upper surface of the wafer 300, and the second groove wall 12112 abuts against the lower surface of the wafer 300. The first groove wall 12111 and the second groove wall 12112 of the accommodating groove 1211 provide a limiting function for the wafer 300, preventing the wafer 300 from falling during the wafer removal process, and providing a stable gripping force for the transfer of the wafer 300, thereby ensuring good contact with the wafer 300 and minimizing damage to the wafer 300. This solves the problems of low efficiency of traditional wafer removal methods, easy cracking and damage to the wafer 300, and poor adaptability of wafer removal tools, and significantly improves the wafer removal speed and efficiency.
[0057] In conjunction with the first aspect, in some embodiments provided herein, the length of the second groove wall 12112 is shorter than that of the first groove wall 12111, so that clearance areas are provided at both ends to allow the second groove wall 12112 to mate with the carrier when receiving the wafer 300, allowing the wafer 300 to be translated from the carrier into the receiving groove 1211. This makes it easier for the wafer 300 to enter the receiving groove 1211, thereby improving wafer splicing efficiency.
[0058] In combination with the first aspect, in some embodiments provided in the present application, the accommodating groove 1211 is arranged in an arc shape, wherein: the central angle of the first groove wall 12111 is 150°~180°. The central angle of the first groove wall 12111 is within this range, which is convenient for connecting the wafers and does not interfere with the pusher 11, thereby reducing damage to the wafer 300. At the same time, it provides sufficient bearing area for the wafer 300, reducing the risk of the wafer 300 falling.
[0059] In combination with the first aspect, in some embodiments provided in the present application, the accommodating groove 1211 is arranged in an arc shape, wherein: the central angle of the second groove wall 12112 is 120°~150°. The central angle of the second groove wall 12112 is within this range. When the edge of the wafer 300 is thinned by the supporting device, it can provide a clearance space, so that the wafer 300 can enter the accommodating groove 1211 more easily, thereby improving the efficiency of splicing.
[0060] In combination with the first aspect, in some embodiments provided in the present application, the thickness of the first groove wall 12111 is 2 mm to 3 mm. The thickness of the first groove wall 12111 within this range can provide sufficient strength for supporting the wafer 300 .
[0061] In combination with the first aspect, in some embodiments provided in the present application, the thickness of the second groove wall 12112 is 3 mm to 5 mm. The thickness of the second groove wall 12112 within this range can provide sufficient strength for supporting the wafer 300 .
[0062] In combination with the first aspect, in some embodiments provided in the present application, the depth of the accommodating groove 1211 is 0.5 mm to 1 mm. The depth of the accommodating groove 1211 is within this range, which can ensure that the wafer 300 has sufficient accommodating depth and reduce the probability of the wafer 300 falling during the transfer process of the wafer 300.
[0063] In combination with the first aspect, in some embodiments provided in the present application, the width of the receiving groove 1211 is 0.05 mm to 0.5 mm. The width of the receiving groove 1211 is within this range, which can reduce the shaking of the wafer 300 in the receiving groove 1211, and at the same time reduce the friction between the wafer 300 and the receiving groove 1211, thereby reducing damage to the wafer 300.
[0064] It should be noted that the pusher 11 also includes a gripping body 112. The gripping body 112 can be the same thickness as the pusher 111 and be in a sheet shape, or it can be different in thickness from the pusher 111 and be in a shape that is easy to hold, such as a gripping handle or a gripping ring.
[0065] It should be noted that the material of the wafer pushing part 111 can be at least one of FR4 and PTFE. These materials can provide a certain support strength to facilitate the pushing of the wafer 300, and also have a certain elasticity to reduce the damage to the wafer 300. The material of the holding body 112 can be the same as or different from the material of the wafer pushing part 111.
[0066] In summary, the wafer pushing part of the wafer picking device after thinning has an abutting surface that abuts against at least a part of the circumferential side wall of the wafer to be picked, so as to push the wafer from the thinning carrier device. (Before pushing, heat the wax film to soften it), align the abutting surface with the crystal arc edge, push the wafer off the assembly, which only takes a few seconds. Then, when the pusher pushes the wafer to the edge of the thinning carrier device, receive the wafer through the wafer bonding part, fix the wafer in the receiving groove of the wafer bonding part, and transfer the wafer to the cleaning carrier device through the wafer bonding part and soak it in the dewaxing solvent for cleaning.
[0067] The pusher can abut against at least a part of the side wall of the wafer through the abutting surface, and then push the wafer to move on the thinning carrier device through the abutting surface, so as to avoid damaging the wafer caused by putting the carrier device and the wafer into the cleaning liquid together. Since the thinned wafer has low strength and is fragile and easy to be damaged, it is also easy to be damaged by the transfer device during its separate transfer. Therefore, the wafer bonding part has a receiving groove for receiving at least a part of the circumferential side wall of the wafer. When the pusher pushes the wafer to the edge of the thinning carrier device, receive the wafer, fix the wafer in the receiving groove, and transfer the wafer to the cleaning carrier device, and the wafer can be transferred by means of clamping, reducing the damage to the wafer during the transfer process.
[0068] In the description of the present application, it should be noted that the orientation or positional relationship indicated by terms such as "upper" and "lower" is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present application. Unless otherwise clearly specified and defined, the terms "mounted", "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific situations.
[0069] It should be noted that in this application, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, such that a process, method, article or device comprising a series of elements not only includes those elements but also includes other elements not expressly listed, or elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "comprising an..." does not exclude the presence of additional identical elements in the process, method, article or device comprising the said element.
[0070] The above are only specific embodiments of this application, enabling those skilled in the art to understand or implement this application. Various modifications to these embodiments will be obvious to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application will not be limited to the embodiments shown herein, but rather to the broadest scope consistent with the principles and novel features claimed herein.
Claims
1. A wafer picking device for a thinned wafer, characterized in that, It includes a film pusher and a film splicer, wherein: The wafer pusher includes a wafer pushing portion having an abutting surface abutting against at least a portion of a circumferential side wall of a wafer to be removed, for pushing the wafer from the thinning support device; The wafer splicer includes a splicer portion having a receiving groove for receiving at least a portion of a circumferential side wall of the wafer. When the wafer pusher pushes the wafer to the edge of the thinning carrier, the splicer portion receives the wafer and transfers the wafer.
2. The wafer picking device for the thinned wafer according to claim 1, wherein, The push piece portion is arranged in an arc shape.
3. The wafer picking device for the thinned wafer according to claim 2, wherein, The central angle of the arc of the push piece portion is 150-180°; and / or, The radius of the arc is R1, the radius of the wafer is R2, and 0.2 mm ≤ R1 to R2 ≤ 0.5 mm.
4. The wafer picking device for the thinned wafer according to claim 2, wherein Both ends of the arc are provided with chamfered corners, the radius of the chamfered corners is R3, 3mm≤R3≤5mm.
5. The wafer pick-up device for the thinned wafer according to claim 1, characterized in that, The height of the pusher portion is H1, the height of the wafer is H0, and 0.05 mm ≤ H1 - H0 ≤ 0.5 mm.
6. The wafer picking device for the thinned wafer according to claim 1, characterized in that The accommodating groove includes a first groove wall and a second groove wall, wherein the first groove wall abuts against the upper surface of the wafer, and the second groove wall abuts against the lower surface of the wafer.
7. The wafer picking device for the thinned wafer according to claim 6, wherein, The length of the second groove wall is smaller than that of the first groove wall, and a clearance area is provided at both ends for fitting with the carrier when receiving the wafer, so that the wafer can be translated from the carrier to the accommodating groove.
8. The wafer picking device for the thinned wafer as described in claim 6, characterized in that, The accommodating groove is arranged in an arc shape, wherein: The central angle of the first groove wall is 150° to 180°; and / or, The central angle of the second groove wall is 120° to 150°.
9. The wafer picking device for the thinned wafer according to claim 6, characterized in that: The thickness of the first groove wall is 2 mm to 3 mm; and / or, The thickness of the second groove wall is 3 mm to 5 mm.
10. The wafer picking device for the thinned wafer according to claim 1, characterized in that, The depth of the accommodating groove is 0.5 mm to 1 mm; and / or, The width of the accommodating groove is 0.05 mm to 0.5 mm.