Dry etching equipment and control method thereof

Abstract

A dry etching device and a control method thereof, the dry etching device comprising: an electrostatic chuck configured to bear a wafer; the ejector pins penetrate through the electrostatic chuck, are parallel to the plane of the chuck surface of the electrostatic chuck, and are not collinear; and the pressure sensor is configured to obtain the load bearing of the ejector pin. The position of the wafer on the ejector pin can be detected through the bearing of the ejector pin obtained by the pressure sensor, so that whether the position of the wafer borne on the ejector pin deviates or not is judged, a basis is provided for judging whether movement of the ejector pin is stopped or not, the problem of wafer sliding can be effectively reduced, the situation can be effectively prevented from being further expanded, and the service life of the wafer is prolonged. And the occurrence of sheet collision and sheet breaking accidents is reduced, the manufacturing yield can be effectively improved, and the waste sheet rate is reduced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor equipment, and particularly to a dry etching equipment and its control method. Background Art

[0002] The dry etching process has become increasingly mature in semiconductor processes. The principle of the dry etching process is usually to use plasma discharge to etch away the metal or non-metal film on the substrate that is not masked by photoresist or a hard mask such as SiO2, so that the area masked by photoresist or hard mask is preserved, and the required pattern is formed on the substrate.

[0003] During the dry etching process, the transfer module transfers the wafer into the process chamber. During the transfer process, the lift pins rise to receive the wafer transferred by the transfer module, and then the lift pins descend until the electrostatic chuck (ESC) on the lower surface of the wafer work platform places the wafer stably on the surface of the electrostatic chuck, so as to perform the etching process; after the process is completed, the lift pins rise again to lift the wafer for the transfer module to transfer out of the process chamber.

[0004] However, in existing dry etching equipment, accidents such as wafer slipping, wafer collision, and wafer fragmentation are likely to occur. Summary of the Invention

[0005] The problem solved by the present invention is to reduce the risk of accidents such as wafer slipping, wafer collision, and wafer fragmentation.

[0006] To solve the above problems, the present invention provides a dry etching equipment, including:

[0007] An electrostatic chuck configured to carry a wafer; a plurality of lift pins penetrating the electrostatic chuck and not collinear in a plane parallel to the plane of the electrostatic chuck; a pressure sensor configured to obtain the load-bearing of the lift pins.

[0008] Optionally, the plane of the electrostatic chuck is parallel to the horizontal plane.

[0009] Optionally, the dry etching equipment has a plurality of pressure sensors, and the plurality of pressure sensors correspond to the plurality of lift pins one by one.

[0010] Optionally, it further includes: a motion cylinder connected to the lift pin, and the motion cylinder is configured to control the movement of the lift pin.

[0011] Optionally, the dry etching equipment has a plurality of motion cylinders, and the plurality of motion cylinders are connected to the plurality of lift pins one by one.

[0012] Optionally, the pressure sensor is connected between the thimble and the corresponding moving cylinder.

[0013] Optionally, it further includes: a control module, which is adapted to obtain the load sensed by the pressure sensor and determine whether to stop the movement of the thimble based on the load.

[0014] Optionally, it further includes: a transfer module, which is adapted to transfer the wafer; the control module is further adapted to determine whether to stop the transfer module from transferring the wafer based on the load.

[0015] Optionally, the control module is further adapted to give an alarm when stopping the movement of the thimble.

[0016] Optionally, the control module includes: a calculator, which is adapted to compare the loads of different thimbles obtained by the pressure sensor and obtain the offset amount and offset direction of the wafer's position on the thimble based on the comparison result; a controller, which determines whether to stop the movement of the thimble based on the offset amount and offset direction.

[0017] Optionally, the controller determines whether to stop the movement of the thimble based on the relationship between the offset amount and offset direction and a preset offset range.

[0018] Optionally, the calculator compares the loads of different thimbles obtained by the pressure sensor through a PID algorithm and obtains the offset amount and offset direction of the wafer's position on the thimble based on the comparison result.

[0019] Correspondingly, the present invention also provides a control method for a dry etching device, including:

[0020] The dry etching device includes: an electrostatic chuck configured to carry a wafer; a plurality of thimbles passing through the electrostatic chuck and not collinear in a plane parallel to the plane of the electrostatic chuck; the control method includes: obtaining the load of the thimble; determining whether to stop the movement of the thimble based on the load.

[0021] Optionally, the dry etching device further includes: a transfer module adapted to transfer the wafer; the control method further includes: determining whether to stop the transfer module from transferring the wafer based on the load.

[0022] Optionally, it further includes: giving an alarm when stopping the movement of the thimble.

[0023] Optionally, the step of determining whether to stop the movement of the thimble based on the load includes: comparing the loads of different thimbles and obtaining the offset amount and offset direction of the wafer's position on the thimble based on the comparison result; determining whether to stop the movement of the thimble based on the offset amount and offset direction.

[0024] Optionally, the steps of comparing the load-bearing capacities of different thimbles and obtaining the offset amount and offset direction of the wafer's position on the thimble based on the comparison result include: comparing the load-bearing capacities of different thimbles through a PID algorithm and obtaining the offset amount and offset direction of the wafer's position on the thimble based on the comparison result.

[0025] Optionally, the step of obtaining the load-bearing capacity of the thimble includes: obtaining the load-bearing capacity of the thimble in real time; the steps of comparing the load-bearing capacities of different thimbles through a PID algorithm and obtaining the offset amount and offset direction of the wafer's position on the thimble based on the comparison result include: comparing the load-bearing capacities of different thimbles in real time through a PID algorithm and obtaining the offset amount and offset direction of the wafer's position on the thimble in real time based on the comparison result; the step of determining whether to stop the movement of the thimble based on the load-bearing capacity includes: determining in real time whether to stop the movement of the thimble.

[0026] Optionally, the step of determining whether to stop the movement of the thimble based on the offset amount and offset direction and based on the load-bearing capacity includes: determining whether to stop the movement of the thimble based on the relationship between the offset amount and offset direction and a preset offset threshold range.

[0027] Compared with the prior art, the technical solution of the present invention has the following advantages:

[0028] In the technical solution of the present invention, the pressure sensor is connected to the thimble and can obtain the load-bearing capacity of the thimble. Through the load-bearing capacity of the thimble obtained by the pressure sensor, the position of the wafer on the thimble can be detected, so as to determine whether the position of the wafer carried on the thimble is offset, thereby providing a basis for the judgment of whether to stop the movement of the thimble, effectively reducing the occurrence of the sliding sheet problem, effectively preventing the situation from further expanding, being beneficial to reducing the occurrence of chip collision and chip breakage accidents, effectively improving the manufacturing yield, and reducing the scrap rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 is a schematic structural diagram of some embodiments of the dry etching equipment of the present invention;

[0030] Figure 2 is a functional block diagram of the transmission module in some embodiments of the dry etching equipment of the present invention;

[0031] Figure 3 is a functional block diagram of the control module in some embodiments of the dry etching equipment of the present invention;

[0032] Figure 4 is a schematic diagram of the control module of the dry etching equipment of the present invention obtaining the offset amount and offset direction of the wafer position;

[0033] Figure 5 is a schematic flow diagram of some embodiments of the control method of the dry etching equipment of the present invention. Detailed implementation manners

[0034] As can be seen from the background art, in the existing dry etching equipment, accidents such as wafer sliding, wafer collision, and wafer fragmentation are likely to occur.

[0035] As described in the background art, in a dry etching equipment, before and after the process, the placement and lifting of the wafer on the electrostatic chuck are realized by the lifting of the ejector pins. Since the contact area between the ejector pins and the wafer is small and cannot provide sufficient frictional force, when the instantaneous lifting speed is too fast or there is a jitter, the position of the wafer on the ejector pins will shift.

[0036] When the position of the wafer on the ejector pins shifts too much, the further movement of the ejector pins may further expand the shift of the wafer position, thus easily leading to the occurrence of wafer sliding accidents; moreover, after the position of the wafer on the ejector pins shifts, the transfer module is more likely to have accidents such as wafer collision and wafer fragmentation.

[0037] To solve the above technical problems, the present invention provides a dry etching equipment. The pressure sensor is connected to the ejector pins and can obtain the load-bearing of the ejector pins. Through the load-bearing of the ejector pins obtained by the pressure sensor, the position of the wafer on the ejector pins can be detected, so as to judge whether the position of the wafer carried on the ejector pins shifts, thereby providing a basis for judging whether to stop the movement of the ejector pins, effectively reducing the occurrence of wafer sliding problems, effectively preventing the situation from further expanding, being beneficial to reducing the occurrence of wafer collision and wafer fragmentation accidents, effectively improving the manufacturing yield, and reducing the scrap rate.

[0038] To make the above objects, features, and advantages of the present invention more obvious and understandable, the following detailed description will be made on the specific embodiments of the present invention with reference to the accompanying drawings.

[0039] Reference Figure 1 , shows a schematic structural diagram of some embodiments of the dry etching equipment of the present invention.

[0040] The dry etching equipment includes:

[0041] An electrostatic chuck ESC configured to carry a wafer 101; a plurality of ejector pins 110 passing through the electrostatic chuck ESC and not collinear in a plane parallel to the plane of the electrostatic chuck ESC; a pressure sensor 120 configured to obtain the load-bearing of the ejector pins 110.

[0042] The following will detail the technical solution of the dry etching equipment of the present invention with reference to the accompanying drawings.

[0043] The electrostatic chuck ESC is a fixture that uses the principle of electrostatic adsorption to fix and release the adsorbed object. In the dry etching equipment, the electrostatic chuck ESC is suitable for carrying and fixing the wafer 101 to ensure the stability and accuracy of the wafer 101 during the dry etching process.

[0044] In some embodiments of the present invention, the surface of the electrostatic chuck ESC is parallel to the horizontal plane.

[0045] In the dry etching equipment, the ejector pin 110 is used for the transfer and support of the wafer.

[0046] Specifically, the ejector pin 110 is used in cooperation with the electrostatic chuck ESC to ensure the precise positioning and stable support of the wafer 101 during the dry etching process. When the wafer 101 enters the chamber, the ejector pin 110 rises to receive the wafer 101. As the ejector pin 110 drops, the wafer 101 is placed on the surface of the electrostatic chuck ESC. After the dry etching process is completed, the ejector pin 110 rises again to lift the wafer 101 from the electrostatic chuck ESC for removal.

[0047] The dry etching equipment has a plurality of ejector pins 110. Along the direction perpendicular to the surface of the electrostatic chuck ESC, the ejector pin 110 penetrates through the electrostatic chuck ESC. In the plane parallel to the surface of the electrostatic chuck ESC, the plurality of ejector pins 110 are not collinear.

[0048] In some embodiments of the present invention, the surface of the electrostatic chuck ESC is parallel to the horizontal plane. The ejector pin 110 penetrates through the electrostatic chuck ESC along the direction perpendicular to the surface. The ejector pin 110 extends along the direction perpendicular to the horizontal plane. The ejector pin 110 extends along the direction of gravity.

[0049] In some embodiments of the present invention, in the plane parallel to the surface of the electrostatic chuck ESC, the plurality of ejector pins 110 are evenly distributed around the center of gravity of the wafer 101. In some exemplary embodiments, the number of the ejector pins 110 is three, and the three ejector pins 110 are distributed in an equilateral triangle around the center of gravity of the wafer 101. Specifically, in the plane parallel to the surface of the electrostatic chuck ESC, the 3 ejector pins 110 are located at the three vertices of an equilateral triangle, and the center of gravity of the wafer 101 is located at the geometric center of the same equilateral triangle.

[0050] The pressure sensor 120 is used to obtain the load-bearing of the ejector pin 110.

[0051] Based on the load-bearing of the ejector pin 110 obtained by the pressure sensor 120, it can be determined whether the position of the wafer 101 carried on the ejector pin 110 is offset, thereby providing a basis for determining whether to stop the movement of the ejector pin 110, effectively reducing the occurrence of the problem of wafer sliding, effectively preventing the situation from further expanding, being beneficial to reducing the occurrence of wafer collision and fragmentation accidents, effectively improving the manufacturing yield, and reducing the scrap rate.

[0052] In some embodiments of the present invention, the dry etching equipment has a plurality of pressure sensors 120, and the plurality of pressure sensors 120 and the plurality of thimbles 110 correspond to each other one by one. The plurality of pressure sensors 120 and the plurality of thimbles 110 are connected to each other one by one, and any one of the sensors 120 obtains the load-bearing of the corresponding thimble 110.

[0053] In some embodiments of the present invention, the dry etching equipment further includes: a motion cylinder 130, the motion cylinder 130 is connected to the thimble 110, and the motion cylinder 130 is configured to control the motion of the thimble 110. The motion cylinder 130 is used to control the lifting motion of the thimble 110.

[0054] In some embodiments, the dry etching equipment has a plurality of motion cylinders 130, and the plurality of motion cylinders 130 and the plurality of thimbles 110 are connected to each other one by one. The plurality of motion cylinders 130, the plurality of pressure sensors 120 and the plurality of thimbles 110 are connected to each other one by one.

[0055] In some embodiments, the pressure sensor 120 is connected between the thimble 110 and the corresponding motion cylinder 130. Specifically, as Figure 1 shown in some embodiments, along the direction perpendicular to the disk surface of the electrostatic chuck ESC, the pressure sensor 120 is located between the motion cylinder 130 and the electrostatic chuck ESC. The thimble 110 penetrates through the pressure sensor 120 and is connected to the motion cylinder 130 at one end.

[0056] Continuing to refer to Figure 1 , the dry etching equipment further includes: a control module 140, the control module 140 is adapted to obtain the load-bearing sensed by the pressure sensor 120, and based on the load-bearing, determine whether to stop the motion of the thimble 110.

[0057] Specifically, the control module 140 is connected to the pressure sensor 120 (as shown by the red dotted line in Figure 1 ) to obtain the load-bearing of the corresponding thimble obtained by the pressure sensor 120.

[0058] Based on the load-bearing of the thimble 110 obtained by the pressure sensor 120, the control module 140 provides a basis for judging whether to stop the motion of the thimble 110, which can effectively reduce the occurrence of the sliding sheet problem, can effectively prevent the situation from further expanding, can effectively improve the manufacturing yield, and reduce the scrap rate.

[0059] In some embodiments, the dry etching equipment has a motion cylinder 130; the control module 140 is connected to the motion cylinder 130 (as shown by the red dotted line in Figure 1as shown by the blue dotted line), the control module 140 controls the movement of the ejector pin 110 by controlling the movement of the movement cylinder 140. After obtaining the load sensed by the pressure sensor 120, the control module 140 determines whether to stop the movement of the ejector pin 110 by controlling the movement cylinder 140 based on the load.

[0060] In some embodiments of the present invention, the control module 140 is also adapted to give an alarm when stopping the movement of the ejector pin 110. Specifically, when stopping the movement of the ejector pin 110, the control module 140 can also give an alarm. For example, the control module 140 can give an alarm by displaying a warning message as an indication for the next operation.

[0061] In some embodiments of the present invention, the dry etching equipment further includes: a transfer module (not shown in the figure), the transfer module is adapted to transfer the wafer 101; the control module 140 is also adapted to determine whether to stop the transfer module from transferring the wafer based on the load.

[0062] Specifically, while determining whether to stop the movement of the ejector pin based on the load, the control module 140 determines whether to stop the transfer module from transferring the wafer. For example, when determining to stop the movement of the ejector pin based on the load, the control module 140 also determines to stop the transfer module from transferring the wafer, thereby effectively reducing the occurrence of wafer collision and fragmentation accidents.

[0063] The transfer module is used to realize the transfer of the wafer 101 between chambers and inside and outside the chambers.

[0064] The transfer module includes: a robotic arm, and the robotic arm is used to realize the picking and placing of the wafer. Specifically, the transfer module includes: a vacuum transfer module and an atmospheric transfer module. The vacuum transfer module and the atmospheric transfer module respectively include corresponding robotic arms.

[0065] As Figure 2 shown, in some embodiments, the wafer is loaded onto the dry etching equipment through a wafer cassette via a wafer loading port 201 (loadport). The aligner 202 (aligner) of the dry etching equipment pre-positions the wafer. After passing through the air lock 203 (airlock), the wafer is transferred to the vacuum transfer module robotic arm 204 (vacuum transfer module arm, VTM arm) by the atmospheric transfer module robotic arm (atmosphere transfer module arm, ATM arm), and then transferred into the chamber 205 (chamber) through the vacuum transfer module robotic arm, and further to the working platform of the electrostatic chuck ESC for dry etching process.

[0066] After the dry etching process is completed, the dry-etched wafer is transferred out of the chamber 205 by the robotic arm 204 of the vacuum transfer module and then transferred to the robotic arm of the atmospheric transfer module; after passing through the air lock 203, it returns to the wafer cassette through the wafer loading port 201.

[0067] Exemplarily, when determining to stop the movement of the ejector pin 110, the control module 140 determines to stop the robotic arm from transferring the wafer, thereby effectively reducing the occurrence of the robotic arm hitting the wafer accident and reducing the occurrence of wafer hitting and chipping accidents.

[0068] As Figure 3 shown, in some embodiments, the control module 340 includes: a calculator 341, the calculator 341 being adapted to compare the weights borne by different ejector pins 110 (as Figure 1 shown) obtained by the pressure sensor 120 (as Figure 1 shown), and obtaining the offset amount and offset direction of the position of the wafer 101 (as Figure 1 shown) on the ejector pin 110 (as Figure 1 shown) based on the comparison result; a controller 342, the controller 342 determining whether to stop the movement of the ejector pin 110 (as Figure 1 shown) based on the offset amount and offset direction.

[0069] The calculator 341 is used to obtain the offset amount and offset direction of the position of the wafer on the ejector pin based on the weights borne by different ejector pins 110 (as Figure 1 shown).

[0070] Specifically, the calculator 341 obtains the weights borne by each pressure sensor 120 (as Figure 1 shown) for each ejector pin 110 (as Figure 1 shown), and compares the differences in the weights borne by different ejector pins 110 (as Figure 1 shown); the calculator 341 also obtains the offset amount and offset direction of the position of the wafer 101 (as Figure 1 shown) on the ejector pin 110 (as Figure 1 shown) according to the differences in the weights borne by different ejector pins 110 (as Figure 1 shown).

[0071] A plurality of the ejector pins 110 are evenly distributed around the center of gravity of the wafer 101 in a plane parallel to the plane of the electrostatic chuck ESC. Therefore, in some embodiments, after obtaining the weights borne by different ejector pins 110 (as Figure 1 shown) obtained by the pressure sensor 120, the calculator 341 compares the weights borne by different ejector pins 110 (as Figure 1 shown), thereby obtaining the differences in the weights borne by different ejector pins 110 (as Figure 1 shown); based on different ejector pins 110 (asFigure 1 The comparison result of the load bearing as shown), and the calculator 242 obtains the offset amount and offset direction of the position of the wafer 101 (as shown) on the thimble 110 (as shown). Figure 1 as shown) on the thimble 110 (as shown). Figure 1 as shown).

[0072] As Figure 4 shown, when the load bearing of different thimbles 110 is the same, the position of the wafer 101 on the thimble 110 remains unchanged, and the calculator 341 obtains that the offset amount of the position of the wafer 101 (as shown) on the thimble 110 (as shown) is 0; when the load bearing of different thimbles 110 is inconsistent, the position of the wafer 101 (as shown) on the thimble 110 (as shown) is offset, and the calculator 341 obtains the offset amount and offset direction based on the difference in the load bearing of different thimbles 110 (as shown). Figure 1 as shown) on the thimble 110 (as shown). Figure 1 as shown); when the load bearing of different thimbles 110 is inconsistent, the wafer 101 (as shown) is offset on the thimble 110 (as shown), and the calculator 341 obtains the offset amount and offset direction based on the difference in the load bearing of different thimbles 110 (as shown). Figure 1 as shown) on the thimble 110 (as shown). Figure 1 as shown), and the calculator 341 obtains the offset amount and offset direction based on the difference in the load bearing of different thimbles 110 (as shown). Figure 1 as shown).

[0073] In some embodiments of the example, the calculator 341 compares the load bearing of different thimbles 110 (as shown) obtained by the pressure sensor 120 (as shown) through the PID algorithm, and obtains the offset amount and offset direction of the position of the wafer 101 (as shown) on the thimble 110 (as shown) based on the comparison result. Figure 1 as shown) obtained by the pressure sensor 120 (as shown), and obtains the offset amount and offset direction of the position of the wafer 101 (as shown) on the thimble 110 (as shown) based on the comparison result. Figure 1 as shown). Figure 1 as shown) on the thimble 110 (as shown). Figure 1 as shown).

[0074] Specifically, the calculator 341 obtains the load bearing of different thimbles 110 (as shown) in real time, compares the load bearing of different thimbles in real time through the PID algorithm, and obtains the offset amount and offset direction of the position of the wafer on the thimble in real time based on the comparison result. Figure 1 as shown), compares the load bearing of different thimbles in real time through the PID algorithm, and obtains the offset amount and offset direction of the position of the wafer on the thimble in real time based on the comparison result.

[0075] As Figure 4 shown, in some embodiments, the number of the thimbles 410 is 3, and the 3 thimbles 410 are distributed in an equilateral triangle around the center of gravity 402 of the wafer. Specifically, in the plane parallel to the disk surface of the electrostatic chuck, the 3 thimbles 410 are located at the three vertices of the equilateral triangle, and the center of gravity 402 of the wafer is located at the geometric center of the same equilateral triangle. If the load bearing of different thimbles 410 obtained by the 3 pressure sensors is the same, the position of the center of gravity 402 remains unchanged; if the load bearing of different thimbles 410 obtained by the 3 pressure sensors is inconsistent, the position of the center of gravity 402 changes, and then the offset amount and offset direction of the position of the center of gravity 402 are obtained based on the difference in the load bearing of different thimbles 410.

[0076] Continue to refer to Figure 3, the controller 342 is adapted to determine whether to stop the ejector pin 110 (as Figure 1 shown) based on the offset and the offset direction obtained by the calculator 341.

[0077] In some embodiments, the controller 342 determines whether to stop the ejector pin 101 based on the relationship between the offset, the offset direction, and a preset offset range.

[0078] When the offset and the offset range exceed the offset range, the controller 342 determines to stop the movement of the ejector pin 101; when the offset and the offset range are within the offset range, the controller 342 determines not to stop the movement of the ejector pin 101.

[0079] In some embodiments, the dry etching equipment further includes a transfer module; when the controller 342 determines to stop the movement of the ejector pin 101, it determines to stop the transfer module from transferring the wafer and gives an alarm.

[0080] Correspondingly, the present invention also provides a control method for a dry etching equipment.

[0081] Referring to Figure 5 , a schematic flow chart of some embodiments of the control method for the dry etching equipment of the present invention is shown.

[0082] Combined with reference to Figure 1 , the dry etching equipment includes: an electrostatic chuck ESC configured to carry a wafer 101; a plurality of ejector pins 110 that penetrate the electrostatic chuck ESC and are parallel to the plane of the surface of the electrostatic chuck ESC, and the plurality of ejector pins 110 are not collinear; as Figure 5 shown, the control method includes: step S510, obtaining the load-bearing of the ejector pin; step S520, determining whether to stop the movement of the ejector pin based on the load-bearing.

[0083] In some embodiments of the present invention, the dry etching equipment may be the dry etching equipment of the present invention. The specific technical solutions of the dry etching equipment may refer to Figures 1 to 4 the embodiments of the dry etching equipment shown.

[0084] In some embodiments of the present invention, the dry etching equipment further includes: a transfer module adapted to transfer the wafer; the control method further includes: step S530, determining whether to stop the transfer module from transferring the wafer based on the load-bearing.

[0085] Specifically, in step S530, the step of determining whether to stop the transfer module from transferring the wafer based on the load includes: when it is determined to stop the thimble movement based on the load, determining to stop the transfer module from transferring the wafer, thereby effectively reducing the occurrence of wafer collision and fragmentation accidents. Specifically, the transfer module includes: a robotic arm; the step of determining to stop the transfer module from transferring the wafer includes: determining to stop the robotic arm from transferring the wafer.

[0086] In some embodiments of the present invention, the control method further includes: step S540, giving an alarm. Specifically, the step of giving an alarm in step S540 includes: giving an alarm when the movement of the thimble is stopped.

[0087] In some embodiments of the present invention, the step of determining whether to stop the movement of the thimble based on the load in step S520 includes: comparing the loads of different thimbles, and obtaining the offset amount and offset direction of the wafer's position on the thimble based on the comparison result; based on the offset amount and offset direction, determining whether to stop the movement of the thimble.

[0088] Among them, in some embodiments, the step of comparing the loads of different thimbles and obtaining the offset amount and offset direction of the wafer's position on the thimble based on the comparison result includes: comparing the loads of different thimbles through a PID algorithm, and obtaining the offset amount and offset direction of the wafer's position on the thimble based on the comparison result.

[0089] In some exemplary embodiments, the step of obtaining the load of the thimble includes: obtaining the load of the thimble in real time; the step of comparing the loads of different thimbles through a PID algorithm and obtaining the offset amount and offset direction of the wafer's position on the thimble based on the comparison result includes: comparing the loads of different thimbles in real time through a PID algorithm and obtaining the offset amount and offset direction of the wafer's position on the thimble in real time based on the comparison result; the step of determining whether to stop the movement of the thimble based on the load includes: determining in real time whether to stop the movement of the thimble.

[0090] By feeding back the position offset amount and offset direction of the wafer in real time through PID, real-time monitoring of the wafer position offset is achieved, thereby enabling timely discovery of accident analysis, timely stopping of the thimble movement, and reducing the occurrence of accidents.

[0091] In some embodiments, based on the offset amount and offset direction, the step of determining whether to stop the movement of the thimble based on the load includes: determining whether to stop the movement of the thimble based on the relationship between the offset amount and offset direction and a preset offset threshold range.

[0092] Specifically, when the offset amount and offset range exceed the offset range, it is determined to stop the movement of thimble 101; when the offset amount and offset range are within the offset range, it is determined not to stop the movement of the thimble.

[0093] In summary, the pressure sensor is connected to the ejector pin and can obtain the load borne by the ejector pin. The load borne by the ejector pin obtained by the pressure sensor can detect the position of the wafer on the ejector pin, thereby determining whether the position of the wafer carried on the ejector pin is offset, providing a basis for judging whether to stop the movement of the ejector pin, effectively reducing the occurrence of the sliding sheet problem, effectively preventing the situation from further expanding, being beneficial to reducing the occurrence of chip collision and chip breakage accidents, effectively improving the manufacturing yield, and reducing the scrap rate.

[0094] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be subject to the scope defined by the claims.

Claims

1. A dry etching apparatus, characterized in that, Comprising: An electrostatic chuck configured to hold a wafer. A plurality of thumbtacks penetrating the electrostatic chuck and non - collinear in a plane parallel to the surface of the electrostatic chuck. A pressure sensor configured to obtain the load borne by the thumbtack.

2. The dry etching apparatus according to claim 1, wherein, The surface of the electrostatic chuck is parallel to the horizontal plane.

3. The dry etching apparatus according to claim 1, wherein, The dry - etching equipment has a plurality of pressure sensors, and the plurality of pressure sensors correspond one - to - one with the plurality of thumbtacks.

4. The dry etching equipment according to claim 1, characterized in that, Further comprising: A moving cylinder connected to the thumbtack and configured to control the movement of the thumbtack.

5. The dry etching apparatus according to claim 4, wherein, The dry - etching equipment has a plurality of moving cylinders, and the plurality of moving cylinders are connected to the plurality of thumbtacks one - to - one.

6. The dry etching apparatus according to claim 4, wherein, The pressure sensor is connected between the thumbtack and the corresponding moving cylinder.

7. The dry etching apparatus according to claim 1, wherein Further comprising: A control module adapted to obtain the load sensed by the pressure sensor and determine whether to stop the movement of the thumbtack based on the load.

8. The dry etching apparatus according to claim 7, wherein Further comprising: A transfer module adapted to transfer the wafer. The control module is further adapted to determine whether to stop the transfer of the wafer by the transfer module based on the load.

9. The dry etching apparatus according to claim 7, wherein, The control module is further adapted to give an alarm when stopping the movement of the thumbtack.

10. The dry etching apparatus according to claim 7, wherein The control module includes: A calculator adapted to compare the loads borne by different thumbtacks obtained by the pressure sensor and obtain the offset amount and offset direction of the position of the wafer on the thumbtack based on the comparison result. A controller that determines whether to stop the movement of the thumbtack based on the offset amount and offset direction.

11. The dry etching apparatus according to claim 10, wherein, The controller determines whether to stop the movement of the thumbtack based on the relationship between the offset amount and offset direction and a preset offset range.

12. The dry etching equipment according to claim 10, characterized in that, The calculator compares the loads borne by different thumbtacks obtained by the pressure sensor through a PID algorithm and obtains the offset amount and offset direction of the position of the wafer on the thumbtack based on the comparison result.

13. A control method for a dry - etching equipment, characterized in that The dry - etching equipment includes: an electrostatic chuck configured to hold a wafer; a plurality of thumbtacks penetrating the electrostatic chuck and non - collinear in a plane parallel to the surface of the electrostatic chuck. The control method includes: Obtaining the load borne by the thumbtack. Determining whether to stop the movement of the thumbtack based on the load.

14. The control method according to claim 13, characterized in that, The dry - etching equipment further includes: a transfer module adapted to transfer the wafer. The control method further includes: determining whether to stop the transfer of the wafer by the transfer module based on the load.

15. The control method according to claim 13, wherein Further comprising: Giving an alarm when stopping the movement of the thumbtack.

16. The control method according to claim 13, characterized in that The step of determining whether to stop the movement of the thumbtack based on the load includes: Comparing the loads of different thumbtacks and obtaining the offset amount and offset direction of the position of the wafer on the thumbtack based on the comparison result. Determining whether to stop the movement of the thumbtack based on the offset amount and offset direction.

17. The control method according to claim 16, characterized in that, The step of comparing the loads of different thumbtacks and obtaining the offset amount and offset direction of the position of the wafer on the thumbtack based on the comparison result includes: comparing the loads of different thumbtacks through a PID algorithm and obtaining the offset amount and offset direction of the position of the wafer on the thumbtack based on the comparison result.

18. The control method according to claim 17, characterized in that, The step of obtaining the load borne by the thumbtack includes: obtaining the load borne by the thumbtack in real - time. The steps of comparing the load-bearing of different ejectors through the PID algorithm and obtaining the offset amount and offset direction of the wafer's position on the ejector based on the comparison result include: Comparing the load-bearing of different ejectors in real time through the PID algorithm and obtaining the offset amount and offset direction of the wafer's position on the ejector in real time based on the comparison result; The steps of judging whether to stop the movement of the ejector based on the load-bearing include: judging in real time whether to stop the movement of the ejector.

19. The control method according to claim 16, wherein Based on the offset amount and offset direction, the steps of judging whether to stop the movement of the ejector based on the load-bearing include: judging whether to stop the movement of the ejector based on the relationship between the offset amount and offset direction and a preset offset threshold range.

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