Chip package and method of forming chip package

Abstract

A chip package is provided. The chip package may include: at least one chip; an exposed metal region; a metal protection layer structure over the exposed metal region and configured to protect the metal region from oxidation, the protection layer structure comprising a low temperature deposited oxide; and a hydrothermally converted metal oxide layer over the protective layer structure.

Description

[0001] This application is a divisional application of the invention patent application with the application date of May 28, 2021, the application number of 202110591590.X, and the invention title of "Chip Package and Method of Forming a Chip Package". Technical Field

[0002] Various embodiments generally relate to a chip package and a method of forming a chip package. Background Art

[0003] A chip package may include various materials that form an interface with an encapsulation material, such as a molding compound. To ensure the high reliability of the chip package, it may be necessary to form a strong and long-term reliable bond between various materials, especially between the metal surface and the molding compound. In addition, the chip package may need to be protected against moisture and oxidation of the metal surface. Summary of the Invention

[0004] A chip package is provided. The chip package may include: at least one chip; an exposed metal region; a metal protection layer structure over the exposed metal region and configured to protect the metal region from oxidation, the protection layer structure including a low-temperature deposited oxide; and a hydrothermally converted metal oxide layer over the protection layer structure. Brief Description of the Drawings

[0005] In the drawings, like or identical reference numerals in all different views generally refer to the same components. The drawings are not necessarily drawn to scale, but generally focus on illustrating the principles of the invention. In the following description, various embodiments of the invention will be described with reference to the following drawings, in which:

[0006] Figure 1 Visual representation of a method of forming a chip package according to the prior art;

[0007] Figures 2A - 2C A schematic cross-sectional view of a chip package according to various embodiments is shown;

[0008] Figures 3A - 3D Visual representation of a method of forming a chip package according to various embodiments; and

[0009] Figure 4 A flowchart showing a method of forming a chip package according to various embodiments is shown. Detailed Description

[0010] The following detailed description refers to the accompanying drawings, which illustrate specific details and embodiments in which the invention may be practiced by way of illustration.

[0011] The term "exemplary" is used herein to mean "serving as an example, instance, or illustration". Any embodiment or design described herein as "exemplary" is not necessarily to be construed as more preferred or advantageous than other embodiments or designs.

[0012] The term "on" as used herein with respect to forming a deposited material "on" a side or surface may be used to mean that the deposited material may be formed "directly" on the corresponding side or surface, e.g., in direct contact with the corresponding side or surface. The term "on" as used herein with respect to forming a deposited material "on" a side or surface may also be used to mean that the deposited material may be formed "indirectly" on the corresponding side or surface such that one or more additional layers are disposed between the corresponding side or surface and the deposited material.

[0013] Future requirements for chip packages need to withstand temperatures up to 200 °C during testing and service while providing the same or better reliability. To achieve this, new solutions must be found to prevent substrate oxidation and at the same time be compatible with current and future material sets.

[0014] Various methods have been proposed or used in the past to enhance the adhesion of encapsulant materials to the encapsulated structures in a chip package, e.g., a metal surface, and all of the encapsulated structures have one or more disadvantages.

[0015] In known methods of forming an inorganic adhesive, Zn / Cr dendrites grow electrochemically on a surface (e.g., a metal). This can be a relatively inexpensive method that can allow for providing reliable adhesion between the surface and the encapsulant material and even provide moisture and oxidation protection. However, the electrochemical process for forming the dendrites requires Cr-6 which is carcinogenic.

[0016] In a so-called primer treatment, a bifunctional silane (e.g., aminopropyltriethoxysilane) can be dispensed on a surface (e.g., a metal) to provide adhesion between the metal and an encapsulant material, e.g., an epoxy molding compound. This can be relatively easy to implement and the silane is not carcinogenic. However, the adhesion is not as reliable as that provided by the A2 process and no antioxidant protection is provided.

[0017] (Metal) surface roughening can be performed on the lead frame surface, which can be easily implemented and can provide a cheap and strong adhesion promotion. However, no antioxidant protection is provided and the adhesion promotion is limited to the lead frame even though the chip top is always a critical area.

[0018] An alumina (Al2O3) layer (doped with silicon or covered with silicon dioxide (SiO2) to prevent Al2O3 degradation) can be used as a reaction inhibitor and a moisture barrier. However, the doped alumina or silicon dioxide may not allow for a strong adhesion to the encapsulation material.

[0019] By converting alumina (Al2O3) into a "coral"-like boehmite structure by means of hydrothermal method, a very strong adhesion promotion can be achieved, and the material is non-carcinogenic and can grow on each surface even without electrical connection to the frame. However, antioxidant protection cannot be guaranteed, and no moisture-proof function is provided.

[0020] In Figure 1 a metal region 102 that can be part of a chip package of the prior art is shown. On the metal region 102, the converted alumina 106 can be arranged by forming an alumina layer 104 (shown on the left side) and hydrothermally converting the alumina layer 104 to form a hydrothermally converted metal oxide layer 106 (shown on the right side).

[0021] AlOOH dendrites have an open porous structure, which has shown very good potential as a suitable adhesion promoter for current and future molding materials, which have a wide range in terms of filler size and viscosity.

[0022] However, in terms of corrosion protection under humid conditions, the hydrothermally converted metal oxide layer 106 has weak points.

[0023] Generally, hydrothermal conversion can convert the entire alumina layer 104 into a hydrothermally converted metal oxide layer 106, or only a very thin residual unconverted alumina layer (not shown) may be left.

[0024] The reason for this is that for economic reasons, the alumina layer 104 must be as thin as possible and needs to have a necessary thickness to provide sufficient roughness to provide strong adhesion. In this thickness range (about between 1 and 30 nm), it may be difficult to control the remaining thickness of the dense (i.e., unconverted by hydrothermal) alumina layer 104 to be sufficient to prevent future oxidation of the metal region 102. However, it may be necessary to ensure good adhesion, especially when the metal region 102 is a copper lead frame. Therefore, if only the temperature and time are controlled during the hydrothermal conversion process, there is a high risk that the remaining alumina layer 104 is too thin to protect the metal structure from moisture and oxidation.

[0025] However, even if it were possible to control the residual thickness of the desired dense layer of alumina that may remain after (in this case, partial) hydrothermal conversion, ensured long-term protection could not be achieved: tests have shown that the conversion process continues in a humid heat environment and that further adhesion degradation and moisture penetration cannot be prevented.

[0026] In various embodiments, a chip package having a layer stack structure is provided, which includes a metal protection layer structure on an exposed metal area of the chip package and a hydrothermally converted metal oxide layer on top of the protection layer structure. The protection layer structure can be configured to protect the metal area from oxidation (in other words, the "metal protection layer structure" should be understood as a "protection layer structure for protecting the metal" rather than a "protection layer structure made of metal").

[0027] In various embodiments, the protection layer structure can have an oxidation protection layer and a degradation protection layer, and the degradation protection layer protects the oxidation protection layer from degradation, for example, by acting as a moisture barrier. The oxidation protection layer can include, for example, a metal oxide, such as alumina, or be composed of it. The degradation protection layer can include, for example, an oxide, such as silica, or be composed of it.

[0028] The hydrothermally converted metal oxide layer, such as a hydrothermally converted alumina layer (also known as "boehmite aluminum hydroxide"), can act as an adhesion promoter to increase the adhesion between the exposed metal area (optionally, additionally between other exposed surfaces) and the encapsulation material.

[0029] In various embodiments, a method of forming a chip package is provided, which increases process control over the process of forming an adhesion promoter via hydrothermal conversion of alumina, thereby improving the reliability of the formed chip package.

[0030] Figures 2A - 2C Each of [figures] shows a schematic cross-sectional view of a chip package 200 according to various embodiments. Figures 3A - 3D Each of [figures] visually presents a method of forming a chip package 200 according to various embodiments.

[0031] The chip package 200 can include at least one chip 222, such as a semiconductor chip.

[0032] The chip package 200 can include an exposed metal area 102. Figure 2A One embodiment is shown, in which the exposed metal area 102 is a chip pad, such as a source pad and / or a gate pad. In various embodiments, the exposed metal area can alternatively or additionally include different or additional chip pads (such as drain pads), lead frames (such as Figure 2B and 2Cas shown), wire connection structures, clip and tape connection structures, etc.

[0033] In various embodiments, the exposed metal region 102 may include at least one of a group of materials, the group including: copper (Cu), nickel (Ni), aluminum (Al), gold (Au), silver (Ag), palladium (Pd), and their alloys, such as NiP and / or PdAuAg.

[0034] The chip package 200 may further include a metal protection layer structure 220 over the exposed metal region 102.

[0035] The chip package 200 may further include a hydrothermally converted metal oxide layer 106 over the metal protection layer structure 220.

[0036] The metal protection layer structure 220 may be configured to protect the exposed metal region 102 from oxidation. The metal protection layer structure 220 may include or consist of a low-temperature deposited oxide. The low-temperature deposited oxide may include or consist of an amorphous oxide or a microcrystalline oxide.

[0037] The thickness of the metal protection layer structure 220 may be in the range of about 0.1 nm to about 20 nm, such as in the range of about 0.1 nm to about 10 nm, such as about 0.5 nm to about 10 nm.

[0038] The low-temperature deposited oxide may include a metal oxide, such as titanium dioxide, zinc oxide, hafnium dioxide, tantalum pentoxide (Ta2O5), and zirconium dioxide, or consist of them. Alternatively or additionally, silicon dioxide may be used. In various embodiments, the low-temperature deposited oxide may be arranged as the top layer of the metal protection layer structure 220. In other words, the topmost layer of the metal protection layer structure 220 that may be in direct contact with the hydrothermally converted metal oxide layer 106 may include titanium dioxide, zinc oxide, hafnium dioxide, zirconium dioxide, tantalum pentoxide (Ta2O5), and / or silicon dioxide, or consist of them.

[0039] Figure 3A and Figure 3D The case where the entire metal protection layer structure 220 is formed of a metal oxide is shown.

[0040] In various embodiments, the metal protection layer structure 220 may include aluminum oxide, such as an oxidation protection layer 220_1. In this case, the aluminum oxide may be susceptible to moisture.

[0041] As described in the literature, if an overcoat layer is added, the degradation of Al2O3 in a humid and hot environment can be prevented. Thus, in various embodiments, the oxidation protection layer 220_1 can be protected by an overcoat layer 220_2, for example, the overcoat layer comprises titanium dioxide, zinc oxide, hafnium dioxide, tantalum pentoxide (Ta2O5), zirconium dioxide and / or silicon dioxide or consists of them. This is shown in Figure 3B in an exemplary manner.

[0042] Alternatively or additionally, the alumina layer 220_1 can be doped with, for example, silicon, so as to make the alumina layer 220_1 moisture-proof by forming a moisture-proof doping region 332 in the alumina layer 220_1. This is shown in Figure 3C in an exemplary manner.

[0043] In various embodiments, the hydrothermally converted metal oxide layer 106 can comprise or consist of a layer of aluminum hydroxide. The hydrothermally converted metal oxide layer 106 can be formed over the metal protection layer structure 220 by forming a metal oxide layer, such as an alumina layer 104, over the metal protection layer structure 220 and by initiating hydrolysis in the alumina layer 104, for example, by simultaneously applying heat and moisture.

[0044] The thickness of the hydrothermally converted metal oxide layer 106 can be in the range of about 1 nm to about 50 nm, for example, in the range of about 3 nm to about 30 nm.

[0045] The hydrothermal conversion process can, for example, include: placing the metal oxide layer (for example, a part of the yet-to-be-encapsulated chip package 200, such as a complete yet-to-be-encapsulated chip package 200, where the metal oxide layer forms the top surface) in a heated aqueous solution. Depending on the temperature and duration of the hydrothermal conversion process, the metal oxide layer can be completely converted into the hydrothermally converted metal oxide layer 106, or the metal oxide layer (which can be a partial layer) can remain between the metal protection layer structure 220 and the hydrothermally converted metal oxide layer 106.

[0046] In various embodiments, the chip package 200 can further include an encapsulation material 226, such as a molding compound, such as a molding compound known in the art. The encapsulation material 226 can be attached to at least a part of the exposed metal region 102 through the metal protection layer structure 220 and the hydrothermally converted metal oxide layer 106.

[0047] In various embodiments, the metal protection layer structure 220 and the hydrothermally converted metal oxide layer 106 can be formed not only over one or more exposed metal regions 102, but also additionally over other regions.

[0048] In various embodiments, the metal capping layer structure 220 and the hydrothermally converted metal oxide layer 106 may be formed on a non-metallic region, such as a semiconductor material. Figure 2C 2 is shown in an exemplary manner in FIG. 2 , wherein metal cap structure 220 and hydrothermally converted metal oxide layer 106 cover portions of chip 222 that are not covered by metal regions 102 used as metal pads.

[0049] In various embodiments, the chip package 200 may include an additional non-metallic region, for example, a non-metallic layer (not shown), wherein the encapsulation material is further attached to at least a portion of the non-metallic region, for example, the non-metallic layer. The non-metallic layer may, for example, include or consist of an organic material, for example, imide.

[0050] The metal cap structure 220 may be an adhesive layer structure. In various embodiments where the metal cap structure 220 is a single layer, e.g., formed from a single material, the material may be selected to adhere to the exposed metal region 102 and the hydrothermally converted metal oxide layer 106. This may be true for each of the materials listed above for the metal cap structure 220.

[0051] In various embodiments where the metal cap structure 220 is multi-layered and formed from multiple individual layers, it may be sufficient to select the material of each layer to adhere to the corresponding layer with which it interfaces.

[0052] An exemplary embodiment will be described in more detail below. Figure 3B The process shown in .

[0053] A first layer, such as an oxidation protection layer 220_1, which may be composed of, for example, Al2O3, and an aluminum oxide layer 104, also serving as an oxidation protection layer, may be deposited on the substrate, for example, at least on the exposed metal region 102 (e.g., in an assembled device after wire bonding), using, for example, atomic layer deposition (ALD). The thickness of the aluminum oxide layer 220_1 may be, for example, in the range of approximately 1 nm to approximately 20 nm, preferably, in the range of approximately 3 nm to approximately 8 nm, for example, approximately 5 nm.

[0054] Subsequently, a second layer, for example, a covering layer 220_2 which may include or consist of silicon dioxide, titanium dioxide, zinc oxide, hafnium dioxide, tantalum pentoxide (Ta2O5) and / or zirconium dioxide, may be deposited on the first (Al2O) layer (i.e., the oxidation protection layer 220_1, the aluminum oxide layer 104) to prevent further degradation of the first (Al2O3) layer 220_1 under humid conditions and to act as a reaction stopper in the subsequent hydrothermal conversion.

[0055] Subsequently, the alumina layer 104 can be deposited as the third layer on the second layer 220_2. The alumina layer 104 can be hydrothermally converted into a porous boehmite, such as an AlOOH structure, which can provide excellent adhesion promotion.

[0056] Through the above process, the metal protection layer structure 220 can be formed into a stacked structure of Al2O3 / SiO2 / Al2O3.

[0057] The bottom layer 220_1 of Al2O3 can be deposited at a temperature and thickness sufficient to prevent future oxidation of the underlying substrate (e.g., a Cu lead frame).

[0058] The top alumina layer 104 can be deposited with a certain thickness, which can then be transformed into an adhesion promotion structure (hydrothermally converted metal oxide layer 106) by hydrothermal treatment (e.g., hot water immersion).

[0059] As another way of expressing it: Since it is difficult to control the hydrothermal conversion in terms of not completely converting the entire existing alumina layer 104 into the adhesion promotion structure 106 (otherwise, the oxidation protection provided by the alumina will be lost), a central layer is provided to make the process controllable.

[0060] The central layer, which can include, for example, silicon dioxide, titanium dioxide, zinc oxide, hafnium dioxide, tantalum pentoxide (Ta2O5), and / or zirconium dioxide or be composed of them, can actively prevent the entire alumina layer 104 from being converted into the adhesion promotion structure 106. Therefore, it can be ensured that after hydrothermal treatment, there is still enough alumina 220_1 on the underlying substrate to prevent future oxidation. In addition to feasible process control (self-limiting process), the intermediate layer of silicon dioxide, titanium dioxide, zinc oxide, hafnium dioxide, tantalum pentoxide (Ta2O5), and / or zirconium dioxide can be an effective moisture barrier to prevent moisture from migrating to the chip surface, such as into and / or along the exposed metal regions 102.

[0061] The chip package 200 can provide excellent adhesion promotion between the exposed metal regions 102 (and optionally, other regions of the chip package 200 that form an interface with the encapsulation material) and the encapsulation material 226, such as a molding compound.

[0062] The chip package 200 can further ensure that the dense alumina layer 104 does not further degrade, and this alumina layer can be used as oxidation protection for the exposed metal regions 102. In addition, the intermediate layer can provide a self-limiting process stop for the hydrothermal conversion step, which can greatly reduce the machine cost of this process.

[0063] Combinations between the embodiments that can be used Figures 2A - 2C and / or Figures 3A - 3DCombinations of embodiments with each other, for example, having the Al2O3 layer 220_2 below the metal protection layer structure 220 (as Figure 3B shown) and the alumina layer 104 above the metal protection layer structure 220 (as Figure 3D shown), or for example, having a doped Al2O3 layer as the metal protection layer structure 220 (as Figure 3C shown) and combining it with the Al2O3 layer above the metal protection layer structure 220 (as Figure 3D shown). Figure 2A For the chip pads, i.e., the metal regions 102, Figure 2B for the chip pads, i.e., the metal regions 102 and the lead frame surface 224 and / or the entire surface joined to the encapsulation material 226 as Figure 2C shown, any layer structure as shown by Figures 3A - 3D etc. can be used in terms of their respective metal protection layer structures 220.

[0064] Figure 4 FIG. 400 is a flowchart showing a method of forming a chip package including a chip and an exposed metal region according to various embodiments.

[0065] The method may include forming a metal protection layer structure over the exposed metal region, where the metal protection layer structure is configured to protect the metal region from oxidation, forming the protection layer structure including depositing a low-temperature oxide (410), and forming a hydrothermally converted metal oxide layer over the protection layer structure (420).

[0066] The following will illustrate each example:

[0067] Example 1 is a chip package. The chip package includes: at least one chip; an exposed metal region; a metal protection layer structure over the exposed metal region and configured to protect the metal region from oxidation, the protection layer structure including a low-temperature deposited oxide; and a hydrothermally converted metal oxide layer over the protection layer structure.

[0068] In Example 2, the subject matter of Example 1 may optionally further include: the low-temperature deposited oxide includes or consists of a metal oxide.

[0069] In Example 3, the subject matter of Example 1 or 2 may optionally further include: the hydrothermally converted metal oxide layer includes or consists of a layer of aluminum hydroxide.

[0070] In Example 4, the subject matter of any one of Examples 1-3 may optionally further include an alumina layer between the metal protection layer structure and the hydrothermally converted metal oxide layer.

[0071] In Example 5, the subject matter of any one of Examples 1-4 may optionally further include: the metal protection layer structure includes a top layer, and the top layer includes at least one of a group of materials, and the group includes silicon dioxide, titanium dioxide, zinc oxide, hafnium dioxide, tantalum pentoxide (Ta2O5), and zirconium dioxide.

[0072] In Example 6, the subject matter of Example 5 may optionally further include: the metal protection layer structure includes an alumina layer between the top layer and the exposed metal region.

[0073] In Example 7, the subject matter of any one of Examples 1-4 may optionally further include: the metal protection layer structure includes alumina, and the top layer of the alumina has doped alumina.

[0074] In Example 8, the subject matter of any one of Examples 1-7 may optionally further include: the exposed metal region includes at least one of a group of metal regions, and the group includes chip pads, lead frames, wire connection structures, clips, and tape connection structures.

[0075] In Example 9, the subject matter of any one of Examples 1-8 may optionally further include: the exposed metal region includes at least one of a group of materials, and the group includes copper (Cu), nickel (Ni), aluminum (Al), gold (Au), silver (Ag), palladium (Pd), and their alloys, such as nickel phosphide (NiP) and / or PdAuAg.

[0076] In Example 10, the subject matter of any one of Examples 1-9 may optionally further include: the low-temperature deposited oxide of the metal protection layer structure is an amorphous oxide or a microcrystal.

[0077] In Example 11, the subject matter of any one of Examples 1-10 may optionally further include: an encapsulating material, and the encapsulating material is attached to at least a part of the exposed metal region through the metal protection layer structure and the hydrothermally transformed metal oxide layer.

[0078] In Example 12, the subject matter of any one of Examples 1-11 may optionally further include: a non-metal layer, and the encapsulating material is also attached to at least a part of the non-metal layer.

[0079] In Example 13, the subject matter of Example 12 may optionally further include: the non-metal layer includes an organic material, such as an imide, or consists of it.

[0080] In Example 14, the subject matter of any one of Examples 1-13 may optionally further include: the metal protection layer structure forms a hydrolysis stop layer.

[0081] In Example 15, the subject matter of any one of Examples 1-14 may optionally further include: the metal protection layer structure is an adhesive layer structure.

[0082] Example 16 is a method of forming a chip package including a chip and an exposed metal region. The method may include: forming a metal protection layer structure over the exposed metal region, wherein the metal protection layer structure is configured to protect the metal region from oxidation, wherein forming the protection layer structure includes depositing an oxide at low temperature; and forming a hydrothermally converted metal oxide layer over the protection layer structure.

[0083] In Example 17, the subject matter of Example 16 may optionally further include: the oxide deposited at low temperature includes or consists of a metal oxide.

[0084] In Example 18, the subject matter of Example 16 or 17 may optionally further include: the hydrothermally converted metal oxide layer includes or consists of a layer of aluminum hydroxide.

[0085] In Example 19, the subject matter of any one of Examples 16 - 18 may optionally further include: forming an alumina layer between the metal protection layer structure and the hydrothermally converted metal oxide layer.

[0086] In Example 20, the subject matter of any one of Examples 16 - 19 may optionally further include: forming the metal protection layer structure includes forming a top layer, the top layer including at least one of a group of materials, the group including silicon dioxide, hafnium dioxide, titanium dioxide, zinc oxide, and zirconium dioxide.

[0087] In Example 21, the subject matter of Example 20 may optionally further include: forming the metal protection layer structure includes forming an alumina layer between the top layer and the exposed metal region.

[0088] In Example 22, the subject matter of any one of Examples 16 - 19 may optionally further include: forming the metal protection layer structure includes: forming an alumina layer; and doping the top layer of the alumina layer, such as doping with silicon.

[0089] In Example 23, the subject matter of any one of Examples 16 - 22 may optionally further include: the exposed metal region includes at least one of a group of metal regions, the group consisting of chip pads, lead frames, wire connection structures, clips, and tape connection structures.

[0090] In Example 24, the subject matter of any one of Examples 16 - 23 may optionally further include: the exposed metal region includes at least one of a group of materials, the group including copper (Cu), nickel (Ni), aluminum (Al), gold (Au), silver (Ag), palladium (Pd), and their alloys, such as nickel phosphide (NiP) and / or PdAuAg.

[0091] In Example 25, the subject matter of any one of Examples 16 - 24 may optionally further include: the oxide deposited at low temperature in the metal protection layer structure is an amorphous oxide or a microcrystalline oxide.

[0092] In Example 26, the subject matter of any one of Examples 16 - 25 may optionally further include: forming an encapsulating material that attaches to at least a portion of the exposed metal region through the metal protection layer structure and the hydrothermally transformed metal oxide layer.

[0093] In Example 27, the subject matter of Example 26 may optionally further include: forming a non - metal layer; wherein the encapsulating material also attaches to at least a portion of the non - metal layer.

[0094] In Example 28, the subject matter of Example 27 may optionally further include: the non - metal layer comprises an organic material, such as an imide or consists of it.

[0095] In Example 29, the subject matter of any one of Examples 16 - 28 may optionally further include: the metal protection layer structure forms a hydrolysis - stopping layer.

[0096] In Example 30, the subject matter of any one of Examples 16 - 29 may optionally further include: the metal protection layer structure is configured to serve as an adhesion layer for the exposed metal region.

[0097] In Example 31, the subject matter of any one of Examples 16 - 30 may optionally further include: forming a hydrothermally transformed metal oxide layer over the protection layer structure includes forming a metal oxide layer over the protection layer structure and placing the metal oxide layer in a heated aqueous solution.

[0098] Although the invention has been particularly shown and described with reference to specific embodiments, those skilled in the art should understand that various changes in form and detail may be made without departing from the spirit and scope of the invention as defined by the appended claims. Therefore, the scope of the invention is indicated by the appended claims and is thus intended to cover all changes falling within the meaning and scope of the equivalence of the claims.

Claims

1. A chip package, comprising: · At least one chip; · Exposed metal regions and non-metal regions; · A metal protection layer structure over the exposed metal regions and non-metal regions, the protection layer structure including a low-temperature deposited oxide; and · A hydrothermally converted metal oxide layer over the protection layer structure.

2. The chip package according to claim 1, Among them, The low-temperature deposited oxide includes or consists of a metal oxide.

3. The chip package according to claim 1 or 2, Among them, The hydrothermally converted metal oxide layer includes or consists of a layer of aluminum hydroxide.

4. The chip package according to claim 1 or 2, wherein The chip package further includes: An aluminum oxide layer between the metal protection layer structure and the hydrothermally converted metal oxide layer.

5. The chip package according to claim 1 or 2, Among them, The metal protection layer structure includes a top layer, the top layer including at least one of a group of materials, the group including: Silicon dioxide; Titanium dioxide; Zinc oxide; Hafnium dioxide; Tantalum pentoxide; and Zirconium dioxide.

6. The chip package according to claim 5, Among them, The metal protection layer structure includes an aluminum oxide layer between the top layer and the exposed metal regions.

7. The chip package according to claim 1 or 2, Among them, The metal protection layer structure includes aluminum oxide having a top layer of doped aluminum oxide.

8. The chip package according to any one of claims 1-2, 6, Among them, The exposed metal regions include at least one of a group of metal regions, the group including: Chip pads; Lead frames; Wire connection structures; Clamps; and Tape connection structures.

9. The chip package according to any one of claims 1-2, 6, Among them, The exposed metal regions include at least one of a group of materials, the group including: Copper (Cu); Nickel (Ni); Nickel phosphide (NiP); Aluminum (Al); Gold (Au); Silver (Ag); Palladium (Pd); and Their alloys.

10. The chip package according to claim 9, wherein, The alloy is PdAuAg.

11. The chip package according to any one of claims 1-2, 6, and 10, wherein, The chip package further includes: An encapsulating material attached to at least a portion of the exposed metal regions through the metal protection layer structure and the hydrothermally converted metal oxide layer.

12. The chip package according to claim 11, wherein, The chip package further includes: A non-metal layer; Wherein, the encapsulating material is further attached to at least a portion of the non-metal layer.

13. A chip package, comprising: · At least one chip; · Exposed metal regions and non-metal regions; · A metal protection layer structure over the exposed metal regions and non-metal regions and configured to protect the metal regions from oxidation; · A hydrothermally converted metal oxide layer over the protection layer structure; and · An aluminum oxide layer between the metal protection layer structure and the hydrothermally converted metal oxide layer.

14. A chip package, comprising: · At least one chip on a surface of a lead frame; · Exposed metal regions and non-metal regions on a surface of the at least one chip; · A metal protection layer structure over the exposed metal regions and non-metal regions, the protection layer structure including a metal oxide; and · A hydrothermally converted metal oxide layer over the protection layer structure.

15. The chip package according to claim 14, Among them, The metal oxide includes aluminum oxide.

16. The chip package according to claim 14 or 15, Among them, The hydrothermally converted metal oxide layer includes a layer of aluminum hydroxide.

17. The chip package according to claim 14 or 15, Among them, The metal protection layer structure includes multiple layers formed by multiple single layers.

18. The chip package according to claim 17, Among them, One or more of the multiple single layers are made of different materials.

19. The chip package according to any one of claims 14, 15, and 18, Among them, The metal protection layer structure is an adhesive layer structure.

20. The chip package according to any one of claims 14, 15, and 18, Among them, The metal protection layer structure includes a silicon-doped moisture-proof doping region.

21. The chip package according to any one of claims 14, 15, and 18, wherein The chip package further includes: An encapsulation material, which is attached to at least a part of the exposed metal region and non-metal region through the metal protection layer structure and the hydrothermally converted metal oxide layer.

22. The chip package according to any one of claims 14, 15, and 18, Among them, The metal protection layer structure and the hydrothermally converted metal oxide layer directly extend on the surface of the lead frame.

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