Ultra-wide-band honeycomb wave-absorbing structure and equipment with independently regulated and controlled electromagnetic loss

Abstract

The invention discloses an ultra-wideband honeycomb wave-absorbing structure and equipment with independently regulated electromagnetic loss. The structure comprises a supporting structure, a low-frequency magnetic wave-absorbing structure and a high-frequency electric resonance type wave-absorbing structure. Wherein the supporting structure is a main body structure of the ultra wide band honeycomb wave-absorbing structure with independently regulated electromagnetic loss, and is used for supporting and fixing the low-frequency magnetic wave-absorbing structure and the high-frequency electric resonance type wave-absorbing structure. The low-frequency magnetic wave-absorbing structure is used for absorbing electromagnetic waves of P and L wave bands, and the high-frequency electric resonance type wave-absorbing structure is used for absorbing electromagnetic waves of S to Ku wave bands. According to the structure, the advantages of different wave-absorbing mechanisms are comprehensively utilized, the advantages of broadband, low-frequency coverage and low reflectivity are considered under the low-profile performance, the independent regulation and control capacity of the low-frequency wave-absorbing structure and the high-frequency wave-absorbing structure is good, the high-frequency wave-absorbing structure can introduce different performances by flexibly designing different structures, and the flexibility is higher. The invention relates to the technical field of electromagnetic protection and radar stealth.

Description

Technical Field

[0001] The present application relates to the technical fields of electromagnetic protection and radar stealth, and particularly to an ultra-wideband cellular absorber structure and device with independent regulation of electromagnetic loss. Background Art

[0002] As one of the cores of stealth technology, microwave absorbing materials are widely used in equipment such as aircraft, ships, and armored vehicles to reduce the radar cross-section by absorbing incident electromagnetic waves. However, traditional absorbing materials mostly adopt a single loss mechanism (such as dielectric loss or magnetic loss), resulting in uneven absorption performance in a wide frequency band. At the same time, in order to achieve broadband absorption, existing technologies usually introduce complex geometric structures or multi-layer composite designs, but these methods have problems such as complex processing technology and high cost, which limit their practical applications. Therefore, developing a broadband absorbing material with a simple structure and excellent performance has important engineering value and application prospects.

[0003] In the current design of absorbing materials, the main mechanisms for generating absorption effects are as follows: (1) using carbon materials such as carbon black, graphene, carbon nanotubes, or carbon fibers to generate electrical loss absorption; (2) combining frequency selective surfaces and lumped elements to generate absorption by means of electromagnetic resonance; (3) using resistive surfaces to generate electrical loss absorption; (4) using magnetic materials to generate magnetic loss absorption, such as ferrites, FeSiCr, hydroxyl iron, FeSiAl, etc. In recent years, in order to better meet the requirements of broadband absorption, the design of absorbers combining different mechanisms has become a research hotspot.

[0004] The design method combining multiple absorption mechanisms has great development potential in the ultra-wideband, especially in the low-frequency absorption bands covering the P and L bands, but the currently disclosed design methods still have deficiencies such as high profile and high reflectivity. Summary of the Invention

[0005] The present application aims to solve at least one of the technical problems existing in the prior art. For this purpose, the present application proposes an ultra-wideband cellular absorber structure with independent regulation of electromagnetic loss, which can solve the technical problems of high profile, high reflectivity, and insufficient low-frequency coverage of current absorbing materials.

[0006] The present application also proposes a device having the above ultra-wideband cellular absorber structure with independent regulation of electromagnetic loss.

[0007] The ultra-wideband cellular absorber structure with independent regulation of electromagnetic loss according to the first aspect embodiment of the present application includes:

[0008] A support structure, which includes a bottom plate and a cellular structure installed on the bottom plate;

[0009] A low-frequency magnetic wave absorption structure, which includes a first ferrite layer, a high-resistance film, and a second ferrite layer, and the high-resistance film is disposed between the first ferrite layer and the second ferrite layer;

[0010] A high-frequency electric resonance type wave absorption structure, which includes a first circuit board and a second circuit board stacked on each other; a first outer resonance ring and a first inner resonance ring are disposed on the first circuit board, a first resistor is disposed on the first outer resonance ring, and a second resistor is disposed on the first inner resonance ring; a second outer resonance ring and a second inner resonance ring are disposed on the second circuit board, a third resistor is disposed on the second outer resonance ring, and a fourth resistor is disposed on the second inner resonance ring;

[0011] Wherein, both the low-frequency magnetic wave absorption structure and the high-frequency electric resonance type wave absorption structure are detachably mounted in the honeycomb structure.

[0012] The ultra-wideband honeycomb wave absorption structure with independent regulation of electromagnetic loss according to the embodiment of the present application has at least the following beneficial effects: This structure comprehensively utilizes the advantages of different wave absorption mechanisms, and simultaneously takes into account the advantages of broadband, low-frequency coverage, and low reflectivity under the low-profile performance. Moreover, the independent regulation ability of the low-frequency wave absorption structure and the high-frequency wave absorption structure is good, and the high-frequency wave absorption structure can introduce different performances by flexibly designing different structures, which is more flexible.

[0013] According to some embodiments of the present application, the honeycomb structure is provided with a groove capable of accommodating the low-frequency magnetic wave absorption structure and the high-frequency electric resonance type wave absorption structure.

[0014] According to some embodiments of the present application, a honeycomb structure is disposed between the low-frequency magnetic wave absorption structure and the high-frequency electric resonance type wave absorption structure, and between the first circuit board and the second circuit board.

[0015] According to some embodiments of the present application, the thickness and types of the first ferrite layer and the second ferrite layer are different to obtain different electromagnetic wave absorption effects.

[0016] According to some embodiments of the present application, the high-resistance film includes a thin film and a high-resistance layer disposed on the thin film, and the sheet resistance of the high-resistance layer is R s1 = 70 to 90 Ω / sq.

[0017] According to some embodiments of the present application, the first outer resonance ring is a first outer circular resonance ring, the first inner resonance ring is a first inner circular resonance ring, the second outer resonance ring is a second outer circular resonance ring, and the second inner resonance ring is a second inner circular resonance ring; both the first outer circular resonance ring and the first inner circular resonance ring are circular and coaxially arranged, and both the second outer circular resonance ring and the second inner circular resonance ring are circular and coaxially arranged.

[0018] According to some embodiments of the present application, the first outer resonance ring is a first outer polygonal resonance ring, the first inner resonance ring is a first inner polygonal resonance ring, the second outer resonance ring is a second outer polygonal resonance ring, and the second inner resonance ring is a second inner polygonal resonance ring; both the first outer polygonal resonance ring and the first inner polygonal resonance ring are polygonal rings and are coaxially arranged, and both the second outer polygonal resonance ring and the second inner polygonal resonance ring are polygonal rings and are coaxially arranged.

[0019] According to some embodiments of the present application, the first outer polygonal resonance ring, the first inner polygonal resonance ring, the second outer polygonal resonance ring, and the second inner polygonal resonance ring are all provided with bending portions.

[0020] According to some embodiments of the present application, the number of the first resistor, the second resistor, the third resistor, and the fourth resistor is at least two and they are distributed in a circular array.

[0021] The device according to the second aspect embodiment of the present application includes a plurality of the above-mentioned ultra-wideband cellular absorbing structures with independently controllable electromagnetic losses, and each of the ultra-wideband cellular absorbing structures with independently controllable electromagnetic losses is pieced together with each other along the x direction or the y direction, and the supporting structures of two adjacent ultra-wideband cellular absorbing structures with independently controllable electromagnetic losses are connected to each other.

[0022] The device according to the embodiment of the present application has at least the following beneficial effects: this device uses a cellular structure to achieve structural integration, has a high integration degree, and has good mechanical strength in the vertical direction.

[0023] The additional aspects and advantages of the present application will be partially given in the following description, partially become obvious from the following description, or be understood through the practice of the present application. Description of the Drawings

[0024] The drawings are used to provide a further understanding of the technical solutions disclosed in the present application, and constitute a part of the specification. Together with the embodiments disclosed in the present application, they are used to explain the technical solutions of the present disclosure, and do not constitute a limitation to the technical solutions disclosed in the present application.

[0025] Figure 1 It is an exploded view of Embodiment 1 of the ultra-wideband cellular absorbing structure with independently controllable electromagnetic losses according to the first aspect embodiment of the present application;

[0026] Figure 2 It is a top view of the low-frequency magnetic absorbing structure and the high-frequency electric resonance type absorbing structure in Embodiment 1 of the ultra-wideband cellular absorbing structure with independently controllable electromagnetic losses according to the first aspect embodiment of the present application;

[0027] Figure 3In Embodiment 1 of the ultra-wideband cellular absorbing structure with independent regulation of electromagnetic loss according to the first aspect of the present application, the reflection characteristic curves of the cellular structure, the low-frequency magnetic absorbing structure, and the high-frequency electric resonance absorbing structure;

[0028] Figure 4 In Embodiment 1 of the ultra-wideband cellular absorbing structure with independent regulation of electromagnetic loss according to the first aspect of the present application, the three-dimensional view of the low-frequency magnetic absorbing structure;

[0029] Figure 5 In Embodiment 1 of the ultra-wideband cellular absorbing structure with independent regulation of electromagnetic loss according to the first aspect of the present application, the three-dimensional view of the high-frequency electric resonance absorbing structure;

[0030] Figure 6 The disassembly diagram of Embodiment 2 of the ultra-wideband cellular absorbing structure with independent regulation of electromagnetic loss according to the first aspect of the present application;

[0031] Figure 7 In Embodiment 2 of the ultra-wideband cellular absorbing structure with independent regulation of electromagnetic loss according to the first aspect of the present application, the top view of the low-frequency magnetic absorbing structure and the high-frequency electric resonance absorbing structure;

[0032] Figure 8 In Embodiment 2 of the ultra-wideband cellular absorbing structure with independent regulation of electromagnetic loss according to the first aspect of the present application, the reflection characteristic curves of the cellular structure, the low-frequency magnetic absorbing structure, and the high-frequency electric resonance absorbing structure;

[0033] Figure 9 In Embodiment 2 of the ultra-wideband cellular absorbing structure with independent regulation of electromagnetic loss according to the first aspect of the present application, the three-dimensional view of the low-frequency magnetic absorbing structure;

[0034] Figure 10 In Embodiment 2 of the ultra-wideband cellular absorbing structure with independent regulation of electromagnetic loss according to the first aspect of the present application, the three-dimensional view of the high-frequency electric resonance absorbing structure;

[0035] Figure 11 The three-dimensional view of the device according to the second aspect of the present application.

[0036] Reference numerals: 1 - ultra-wideband cellular absorbing structure with independent regulation of electromagnetic loss, 2 - bottom plate, 3 - cellular structure, 4 - first ferrite layer, 5 - high-resistance film, 6 - second ferrite layer, 7 - first circuit board, 8 - second circuit board, 9 - first outer circular resonance ring, 10 - first inner circular resonance ring, 11 - second outer circular resonance ring, 12 - second inner circular resonance ring, 13 - first resistor, 14 - second resistor, 15 - third resistor, 16 - fourth resistor, 20 - first outer polygon resonance ring, 21 - first inner polygon resonance ring, 22 - second outer polygon resonance ring, 23 - second inner polygon resonance ring. Detailed implementation manners

[0037] The embodiments of the present application will be described in detail below. Examples of the embodiments are shown in the accompanying drawings, where the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application and should not be construed as a limitation to the present application.

[0038] In the description of the present application, it should be understood that with respect to the orientation description, such as the orientation or positional relationship indicated by up, down, front, back, left, right, etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present application.

[0039] In the description of the present application, the meaning of "several" is more than one, the meaning of "a plurality" is more than two, and understandings such as "greater than", "less than", "exceeding", etc. do not include the present number, and understandings such as "above", "below", "within", etc. include the present number. If there is a description of "first" and "second", it is only for the purpose of distinguishing technical features and should not be construed as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features or implicitly indicating the sequence relationship of the indicated technical features.

[0040] In the description of the present application, unless otherwise clearly defined, words such as "arrangement", "installation", "connection", etc. should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above words in the present application in combination with the specific content of the technical solution.

[0041] In the description of the present application, the description with reference to terms such as "one embodiment", "some embodiments", "schematic embodiments", "examples", "specific examples", or "some examples", etc. means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.

[0042] As one of the cores of stealth technology, microwave absorption materials are widely used in equipment such as aircraft, ships, and armored vehicles to reduce the radar cross-section by absorbing incident electromagnetic waves. However, traditional microwave absorption materials mostly adopt a single loss mechanism (such as dielectric loss or magnetic loss), resulting in uneven microwave absorption performance in a wide frequency band. At the same time, to achieve broadband microwave absorption, existing technologies usually introduce complex geometric structures or multi-layer composite designs, but these methods have problems such as complex processing technology and high cost, which limit their practical applications. Therefore, developing a broadband microwave absorption material with a simple structure and excellent performance has important engineering value and application prospects.

[0043] In the current design of microwave absorption materials, the main mechanisms for generating absorption effects are as follows: (1) using carbon materials such as carbon black, graphene, carbon nanotubes or carbon fibers to generate electrical loss microwave absorption; (2) combining frequency selective surfaces and lumped elements to generate microwave absorption by means of electromagnetic resonance; (3) using resistive surfaces to generate electrical loss microwave absorption; (4) using magnetic materials to generate magnetic loss microwave absorption, such as ferrites, FeSiCr, iron hydroxide, FeSiAl, etc. In recent years, in order to better meet the requirements of broadband microwave absorption, the design of microwave absorbers combining different mechanisms has become a research hotspot.

[0044] The design method combining multiple microwave absorption mechanisms has great development potential in the ultra-wideband, especially in the low-frequency microwave absorption bands covering the P and L bands. However, the currently disclosed design methods still have deficiencies such as high profile and high reflectivity.

[0045] In response to this, this application proposes an ultra-wideband honeycomb microwave absorption structure with independent regulation of electromagnetic loss. This structure comprehensively utilizes the advantages of different microwave absorption mechanisms, taking into account the advantages of broadband, low-frequency coverage, and low reflectivity under the condition of low profile performance. Moreover, the independent regulation ability of the low-frequency microwave absorption structure and the high-frequency microwave absorption structure is good. The high-frequency microwave absorption structure can introduce different performances by flexibly designing different structures, which is more flexible.

[0046] In addition, this application also proposes a device including the above ultra-wideband honeycomb microwave absorption structure with independent regulation of electromagnetic loss, which uses the honeycomb structure to achieve structural integration, with high integration and good mechanical strength in the vertical direction.

[0047] The ultra-wideband cellular absorbing structure with independent electromagnetic loss regulation in the first aspect embodiment of the present application includes a support structure, a low-frequency magnetic absorbing structure, and a high-frequency electric resonance absorbing structure. Among them, the support structure is the main structure of the ultra-wideband cellular absorbing structure with independent electromagnetic loss regulation, and it is used to support and fix the low-frequency magnetic absorbing structure and the high-frequency electric resonance absorbing structure. The low-frequency magnetic absorbing structure is used to absorb electromagnetic waves in the P and L bands, and the high-frequency electric resonance absorbing structure is used to absorb electromagnetic waves in the S to Ku bands. The two work together to absorb electromagnetic waves in different bands and do not affect each other's absorption of electromagnetic waves, thereby improving the absorption ability of electromagnetic waves.

[0048] Embodiment 1

[0049] Specifically, referring to Figure 1 , the support structure includes a bottom plate 2 and a honeycomb structure 3 installed on the bottom plate 2. The bottom plate 2 is a metal plate, and the honeycomb structure 3 is a lossless aramid honeycomb.

[0050] The low-frequency magnetic absorbing structure includes a first ferrite layer 4, a high-resistance film 5, and a second ferrite layer 6. The high-resistance film 5 is disposed between the first ferrite layer 4 and the second ferrite layer 6, and the three form a mutually stacked sandwich structure.

[0051] For the low-frequency characteristic absorbing structure, further, the thicknesses and types of the first ferrite layer 4 and the second ferrite layer 6 are different to obtain different electromagnetic wave absorption effects. Combining Figure 1 and Figure 2 in (a), the height of the first ferrite layer 4 is h1 = 6 mm, and the height of the second ferrite layer 6 is h2 = 4.7 mm. Both are cut into regular hexahedrons and embedded in the honeycomb structure 3 with a side length of ω h = 2.75 mm and a honeycomb wall thickness of t1 = 0.1 mm.

[0052] Combining Figure 1 and Figure 2 in (b), the thickness of the high-resistance film 5 is t2 = 0.08 mm. It includes a thin film and a high-resistance layer disposed on the thin film. The sheet resistance of the high-resistance layer is R s1 = 70 to 90 Ω / sq, preferably 80 Ω / sq. The thin film and the high-resistance layer are cut into a square with a side length of ω s1 = 10.8 mm and embedded in the honeycomb structure 3.

[0053] The high-frequency electric resonance type wave-absorbing structure includes a first circuit board 7 and a second circuit board 8 which are stacked on each other. A first outer resonance ring and a first inner resonance ring are arranged on the first circuit board 7. A first resistor 13 is arranged on the first outer resonance ring, and a second resistor 14 is arranged on the first inner resonance ring. A second outer resonance ring and a second inner resonance ring are arranged on the second circuit board 8. A third resistor 15 is arranged on the second outer resonance ring, and a fourth resistor 16 is arranged on the second inner resonance ring.

[0054] For the high-frequency electric resonance type wave-absorbing structure, in combination with Figure 1 and Figure 2 in (c) and (d), the thicknesses of both the first circuit board 7 and the second circuit board 8 are t3 = t4 = 10 mil, and the radii are both r B1 = 6.5 mm. The distance between the first circuit board 7 and the high-resistance film 5 is h3 = 11.7 mm, and h3 > h2; the distance between the second circuit board 8 and the first circuit board 7 is h4 = 4.8 mm, and a honeycomb structure 3 with a height of h5 = 2 mm is stacked above the second circuit board 8.

[0055] The metal resonance rings and lumped resistors loaded on the first circuit board 7 are as shown in Figure 2 (c): In this embodiment, the first outer resonance ring is the first outer circular resonance ring 9, and the first inner resonance ring is the first inner circular resonance ring 10, where both the first outer circular resonance ring 11 and the first inner circular resonance ring 10 are circular and coaxially arranged. The first outer circular resonance ring 9 is loaded at the bottom of the first circuit board 7. The outer diameter of the first outer circular resonance ring 9 is r1 = 5.6 mm, the ring width is ω1 = 0.3 mm, and the resistance value of the first resistor 13 on the ring is R1 = 160 Ω. The first inner circular resonance ring 10 is loaded at the top of the first circuit board 7. The outer diameter of the first inner circular resonance ring 10 is r2 = 4.2 mm, the ring width is ω2 = 0.4 mm, and the resistance value of the second resistor 14 on the ring is R2 = 270 Ω.

[0056] The metal resonance rings and lumped resistors loaded on the second circuit board 8 are as shown in Figure 2 (d): In this embodiment, the second outer resonance ring is the second outer circular resonance ring 11, and the second inner resonance ring is the second inner circular resonance ring 12, where both the second outer circular resonance ring 11 and the second inner circular resonance ring 12 are circular and coaxially arranged. The second outer circular resonance ring 11 is loaded at the bottom of the second circuit board 8. Its outer diameter is r3 = 4.4 mm, the ring width is ω3 = 0.2 mm, and the resistance value of the third resistor 15 on the ring is R3 = 390 Ω. The second inner circular resonance ring 12 is loaded at the top of the second circuit board 8. Its outer diameter is r4 = 1.6 mm, the ring width is ω4 = 0.5 mm, and the resistance value of the fourth resistor 16 on the ring is R4 = 180 Ω.

[0057] Among them, in the high-frequency electric resonance type wave-absorbing structure, the number of the first resistor 13, the second resistor 14, the third resistor 15, and the fourth resistor 16 is at least two and they are distributed in a circular array. In this embodiment, the number of each resistor is four.

[0058] Referring to Figure 3 , the ultra-wideband cellular wave-absorbing structure with independent electromagnetic loss regulation in this embodiment has a reflectivity less than -10 dB in the range of 0.3 - 19.95 GHz, a reflectivity less than -15 dB in the range of 4.07 - 19.22 GHz, and a profile height of 0.025λ L (24.988 mm, λ L is the wavelength corresponding to the lowest frequency of the -10 dB absorption band), and has excellent performance of ultra-wideband, low profile, and low reflection. The wave-absorbing honeycomb can be divided into two parts as shown in Figure 4 and Figure 5 : namely, the low-frequency magnetic wave-absorbing structure of the interlayer metasurface and the high-frequency electric resonance type wave-absorbing structure embedded in the circuit board. Their respective electromagnetic wave absorption performances are as shown in Figure 3 . It can be seen that the low-frequency magnetic wave-absorbing structure generates an absorption peak in the P and L bands; while the low-frequency magnetic wave-absorbing structure is equivalent to a perfect electric conductor for the high-frequency electric resonance type wave-absorbing structure in the S to Ku bands, and the positions of absorption peaks 1 - 4 generated by the high-frequency electric resonance type wave-absorbing structure are not affected by the low-frequency magnetic wave-absorbing structure of the lower-layer interlayer metasurface.

[0059] Furthermore, both the low-frequency magnetic wave-absorbing structure and the high-frequency electric resonance type wave-absorbing structure are detachably installed in the honeycomb structure 3. By replacing different types of low-frequency magnetic wave-absorbing structures and high-frequency electric resonance type wave-absorbing structures, different electromagnetic waves can be absorbed.

[0060] Specifically, the honeycomb structure 3 is provided with grooves capable of accommodating the low-frequency magnetic wave-absorbing structure and the high-frequency electric resonance type wave-absorbing structure. Both the low-frequency magnetic wave-absorbing structure and the high-frequency electric resonance type wave-absorbing structure can be inserted into the honeycomb structure 3 in a plug-in manner for fixation.

[0061] Furthermore, the honeycomb structure 3 is provided between the low-frequency magnetic wave-absorbing structure and the high-frequency electric resonance type wave-absorbing structure, as well as between the first circuit board 7 and the second circuit board 8, so as to improve the isolation degree between them and avoid mutual influence.

[0062] Embodiment 2

[0063] Referring to Figure 6 , the support structure and the low-frequency magnetic wave-absorbing structure in this embodiment are the same as those in Embodiment 1 and will not be elaborated here. For the high-frequency electric resonance type wave-absorbing structure of this embodiment:

[0064] Regarding the high-frequency electric resonance type wave-absorbing structure, in combination with Figure 7In (c) and (d), the thicknesses of the first circuit board 7 and the second circuit board 8 are both t3 = t4 = 10 mil, and the radii are both r B1 = 6.5 mm. The distance between the first circuit board 7 and the high-resistance film 5 is h3 = 11.7 mm, and h3 > h2; the distance between the second circuit board 8 and the first circuit board 7 is h4 = 4.8 mm, and a honeycomb structure 3 with a height of h5 = 2 mm is stacked above the second circuit board 8.

[0065] The metal resonant rings and lumped resistors loaded on the first circuit board 7 are as Figure 7 shown in (c): In this embodiment, the first outer resonant ring is the first outer polygonal resonant ring 20, and the first inner resonant ring is the first inner polygonal resonant ring 21, where both the first outer polygonal resonant ring 20 and the first inner polygonal resonant ring 21 are polygonal rings and are coaxially arranged.

[0066] The first outer polygonal resonant ring 20 is loaded on the bottom of the first circuit board 7. The outer diameter of the first outer polygonal resonant ring 20 is r5 = 6.65 mm, and the ring width is ω5 = 0.3 mm. There is a bend on the first outer polygonal resonant ring 20, and this bend forms an arched concave-convex structure. The bow width g5 = 1.7 mm, and the bow depth f5 = 1.15 mm. The resistance value of the first resistor 13 on the ring is R5 = 240 Ω.

[0067] The first inner polygonal resonant ring 21 is loaded on the top of the first circuit board 7. The outer diameter of the first inner polygonal resonant ring 21 is r6 = 4.35 mm, and the ring width is ω6 = 0.3 mm. There is a bend on the first inner polygonal resonant ring 21, and this bend forms an arched concave-convex structure. The bow width g6 = 0.8 mm, and the bow depth f6 = 0.85 mm. The resistance value of the second resistor 14 on the ring is R6 = 330 Ω.

[0068] The metal resonant rings and lumped resistors loaded on the second circuit board 8 are as Figure 7 shown in (d): In this embodiment, the second outer resonant ring is the second outer polygonal resonant ring 22, and the second inner resonant ring is the second inner polygonal resonant ring 23, where both the second outer polygonal resonant ring 22 and the second inner polygonal resonant ring 23 are polygonal rings and are coaxially arranged.

[0069] The second outer polygonal resonant ring 22 is loaded on the bottom of the second circuit board 8. Its outer diameter is r7 = 4.45 mm, and the ring width is ω7 = 0.2 mm. There is a bend on the second outer polygonal resonant ring 22, and this bend forms an arched concave-convex structure. The bow width g7 = 0.9 mm, and the bow depth f7 = 0.5 mm. The resistance value of the third resistor 15 on the ring is R7 = 270 Ω.

[0070] The second inner polygon resonant ring 23 is loaded on the top of the second circuit board 8, with an outer diameter of r8 = 2.2 mm and a ring width of ω8 = 0.3 mm. There are bends on the second inner polygon resonant ring 23, and these bends form an arcuate concave-convex structure with an arch width of g8 = 0.8 mm and an arch depth of f8 = 0.15 mm. The resistance value of the fourth resistor 16 on the ring is R8 = 180 Ω.

[0071] Among them, in the high-frequency electric resonance type wave-absorbing structure, the numbers of the first resistor 13, the second resistor 14, the third resistor 15, and the fourth resistor 16 are all at least two and are distributed in a circular array. In this embodiment, the number of each resistor is four.

[0072] Refer to Figure 8 , for the ultra-wideband cellular wave-absorbing structure with independent regulation of electromagnetic loss in this embodiment, the reflectivity is less than -10 dB in the range of 0.3 - 18.32 GHz, and the reflectivity is less than -15 dB in the range of 4.09 - 17.78 GHz. The profile height is 0.025λ L (24.988 mm, λ L is the wavelength corresponding to the lowest frequency of the -10 dB absorption band), and it has excellent performances of ultra-wideband, low profile, and low reflection. This wave-absorbing honeycomb can be divided into two parts as shown in Figure 9 and Figure 10 : namely, the low-frequency magnetic wave-absorbing structure of the interlayer metasurface and the high-frequency electric resonance type wave-absorbing structure embedded in the circuit board, and their electromagnetic wave absorption performances are as shown in Figure 8 . It can be seen that the low-frequency magnetic wave-absorbing structure generates an absorption peak in the P and L bands; while the low-frequency magnetic wave-absorbing structure is equivalent to a perfect reflection metal ground for the high-frequency electric resonance type wave-absorbing structure in the S to Ku bands, and the positions of absorption peaks 1 - 4 generated by the high-frequency electric resonance type wave-absorbing structure are not affected by the low-frequency magnetic wave-absorbing structure of the lower-layer interlayer metasurface.

[0073] A device in the second aspect embodiment of this application includes a plurality of the above-mentioned ultra-wideband cellular wave-absorbing structures with independent regulation of electromagnetic loss. Refer to Figure 11 , each ultra-wideband cellular wave-absorbing structure 1 is pieced together with each other along the x direction or the y direction, and the support structures of two adjacent ultra-wideband cellular wave-absorbing structures are connected to each other.

[0074] The above has described the embodiments of this application in detail with reference to the accompanying drawings. However, this application is not limited to the above embodiments. Within the knowledge scope of those of ordinary skill in the art, various changes can be made without departing from the purpose of this application. In addition, without conflict, the embodiments of this application and the features in the embodiments can be combined with each other.

Claims

1. An ultra-wideband cellular absorbing structure with independent regulation of electromagnetic loss, characterized in that, Comprising: A support structure, which includes a bottom plate and a honeycomb structure mounted on the bottom plate; A low-frequency magnetic wave absorbing structure, which includes a first ferrite layer, a high-resistance film, and a second ferrite layer, and the high-resistance film is disposed between the first ferrite layer and the second ferrite layer; A high-frequency electric resonance type wave absorbing structure, which includes a first circuit board and a second circuit board stacked on each other; a first outer resonance ring and a first inner resonance ring are disposed on the first circuit board, a first resistor is disposed on the first outer resonance ring, and a second resistor is disposed on the first inner resonance ring; a second outer resonance ring and a second inner resonance ring are disposed on the second circuit board, a third resistor is disposed on the second outer resonance ring, and a fourth resistor is disposed on the second inner resonance ring; Wherein, the low-frequency magnetic wave absorbing structure and the high-frequency electric resonance type wave absorbing structure are both detachably mounted in the honeycomb structure.

2. The ultra-wideband cellular wave-absorbing structure with independent regulation of electromagnetic loss according to claim 1, characterized in that: The honeycomb structure is provided with a groove capable of accommodating the low-frequency magnetic wave absorbing structure and the high-frequency electric resonance type wave absorbing structure.

3. The ultra-wideband cellular absorbing structure with independent regulation of electromagnetic loss according to claim 1, characterized in that: A honeycomb structure is disposed between the low-frequency magnetic wave absorbing structure and the high-frequency electric resonance type wave absorbing structure, and between the first circuit board and the second circuit board.

4. The ultra-wideband cellular absorbing structure with independent regulation of electromagnetic loss according to claim 1, characterized in that: The thickness and types of the first ferrite layer and the second ferrite layer are different to obtain different electromagnetic wave absorption effects.

5. The ultra-wideband cellular absorbing structure with independent regulation of electromagnetic loss according to claim 1, characterized in that: The high-resistance film includes a thin film and a high-resistance layer provided on the thin film, and the sheet resistance of the high-resistance layer is R s1 = 70 to 90 Ω / sq.

6. The ultra-wideband cellular wave-absorbing structure with independent regulation of electromagnetic loss according to claim 1, characterized in that: The first outer resonance ring is a first outer circular resonance ring, the first inner resonance ring is a first inner circular resonance ring, the second outer resonance ring is a second outer circular resonance ring, and the second inner resonance ring is a second inner circular resonance ring; both the first outer circular resonance ring and the first inner circular resonance ring are circular rings and are coaxially disposed, and both the second outer circular resonance ring and the second inner circular resonance ring are circular rings and are coaxially disposed.

7. The ultra-wideband cellular absorbing structure with independent regulation of electromagnetic loss according to claim 1, characterized in that: The first outer resonance ring is a first outer polygonal resonance ring, the first inner resonance ring is a first inner polygonal resonance ring, the second outer resonance ring is a second outer polygonal resonance ring, and the second inner resonance ring is a second inner polygonal resonance ring; Both the first outer polygonal resonance ring and the first inner polygonal resonance ring are polygonal rings and are coaxially disposed, and both the second outer polygonal resonance ring and the second inner polygonal resonance ring are polygonal rings and are coaxially disposed.

8. The ultra-wideband cellular absorbing structure with independent regulation of electromagnetic loss according to claim 7, characterized in that: Bending portions are provided on the first outer polygonal resonance ring, the first inner polygonal resonance ring, the second outer polygonal resonance ring, and the second inner polygonal resonance ring.

9. The ultra-wideband cellular absorbing structure with independent regulation of electromagnetic loss according to claim 1, characterized in that: The number of the first resistor, the second resistor, the third resistor, and the fourth resistor is at least two and they are distributed in a circumferential array.

10. A device, characterized in that, Including a plurality of ultra-wideband honeycomb wave absorbing structures with independently controllable electromagnetic losses as described in any one of claims 1 to 9, and each of the ultra-wideband honeycomb wave absorbing structures with independently controllable electromagnetic losses is pieced together with each other along the x direction or the y direction, and the support structures of two adjacent ultra-wideband honeycomb wave absorbing structures with independently controllable electromagnetic losses are connected to each other.

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