Preparation method of room-temperature medium-wave infrared retina detector and intelligent sensing calculation application of room-temperature medium-wave infrared retina detector

Abstract

The invention discloses a preparation method of a room-temperature medium-wave infrared retina detector and intelligent sensing calculation application of the room-temperature medium-wave infrared retina detector. The detector comprises a semiconductor epitaxial wafer, and the semiconductor epitaxial wafer is of an nBn laminated barrier type structure and comprises an indium arsenide absorption layer, an arsenic antimony aluminide barrier layer and an indium arsenide contact layer which are sequentially deposited on an indium arsenide substrate; the semiconductor epitaxial wafer is etched into a plurality of photosensitive element arrays through ICP (Inductively Coupled Plasma); the photosensitive element array comprises a deposition passivation protection layer, a metal contact layer, a plurality of top electrodes and bottom electrodes which are parallel to each other, and a plurality of common electrodes. The room-temperature medium-wave infrared retina detector array is prepared by using an indium-arsenic barrier type structure, room-temperature reconfigurable positive and negative linear light response is realized on a short medium-wave infrared band of 2-3.5 microns, and the positive and negative light response rates are both higher than + / -0.1 A / W; and the rear end can be combined with the memristor to realize sensing calculation and classification work.

Description

Technical Field

[0001] The present invention relates to a preparation method of a mid-wave infrared retina-like detector at room temperature and its intelligent sensing and computing application, belonging to the technical field of optoelectronic devices. Background Art

[0002] Since the discovery of infrared radiation in the 19th century, it has developed rapidly and is applied in fields such as space remote sensing, scientific research, industrial and agricultural production, medical and health, machine vision, and intelligent transportation. Traditional mid-wave infrared detectors (such as HgCdTe, InSb, quantum well infrared photodetectors QWIPs) need to be cryogenically cooled (below 77K) to suppress dark current and noise, resulting in a bulky system, high cost, and high energy consumption. Uncooled technologies (such as microbolometers, thermopiles) can work at room temperature, but their sensitivity, response speed, and detectivity (D*) are relatively low, making it difficult to meet high-demand scenarios. Mid-wave infrared detectors with high operating temperatures are one of the important fields where urgent breakthroughs are pursued currently.

[0003] A retina-like detector is a bionic optoelectronic device inspired by the human eye's visual nervous system, which can achieve plastic positive and negative light responses, simulate the neuron network in the retina, and perform preprocessing such as edge detection and dynamic adaptation. In the human retina, the biological response of bipolar cells is dynamically regulated by photoreceptor cells to complete information preprocessing. The retina-like detector can achieve plastic positive and negative light responses, thus realizing positive and negative response functions similar to those of bipolar cells in the human retina.

[0004] Currently, research on retina-like detectors mainly focuses on the visible light band, and most are the preparation of single-unit devices, and the achieved array scales are relatively small. For example, Professor Miao Feng et al. from Nanjing University adjusted the state of photo-generated carriers in the WSe2 channel in the h-BN and Al2O3 insulating layers through gate voltage to achieve positive / negative light responses. However, the detection band of this neuromorphic device is concentrated in the visible light band, and although it has achieved arraying initially, it is only a small-scale array composed of 9 pixels.

[0005] Therefore, it is of great significance to develop a mid-wave infrared retina-like detector array with high stability, high detectivity, and compatible with ROIC circuit processes. Summary of the Invention

[0006] The purpose of the present invention is: aiming at the deficiencies of the prior art, the present invention aims to provide a preparation method of a mid-wave infrared retina-like detector at room temperature and its intelligent sensing and computing application.

[0007] To achieve the above purpose, the present invention adopts the following technical solutions:

[0008] In a first aspect, the present invention provides a mid-wave infrared retina-like detector at room temperature, comprising a semiconductor epitaxial wafer. The semiconductor epitaxial wafer is of an nBn stacked barrier type structure, including an indium arsenide absorption layer, an aluminum antimonide arsenide barrier layer, and an indium arsenide contact layer sequentially deposited on an indium arsenide substrate; the semiconductor epitaxial wafer is etched into a plurality of photosensitive element arrays by ICP etching; the photosensitive element arrays include a deposited passivation protection layer, a metal contact layer, a parallel electrode layer, and a common electrode mesa; the detector is a front incidence type or a back incidence type.

[0009] For the mid-wave room temperature detection, the semiconductor epitaxial wafer, passivation protection layer and metal contact layer selected by the present invention are highly integrated with the backend process, and the corresponding front incidence or back incidence detection method can be selected according to the detection requirements, with a stable structure and high process repeatability.

[0010] In the above technical solution, the infrared detector epitaxial wafer is of an nBn stacked barrier type structure, which can fully suppress the dark current and noise of the infrared detector at room temperature, and realize positive and negative light responses at room temperature; the epitaxial layer is etched into a plurality of photosensitive elements by ICP etching, so that each pixel is isolated from each other, reducing crosstalk and improving the signal-to-noise ratio; the passivation protection layer is used to reduce the dark current of the infrared detector and protect the photosensitive elements from interference.

[0011] To realize a mid-wave infrared retina-like detector array at room temperature, a corresponding common electrode mesa and parallel electrode layer are added in the technical solution of the present invention. The common electrode mesa is formed by ICP etching and is located on the left and right sides of the photosensitive element array. The parallel electrode layer includes a plurality of bottom electrodes parallel to each other and a plurality of top electrodes parallel to each other on the substrate.

[0012] Among them, the energy band width of indium arsenide is 0.35 eV, and the detection band is 2 - 3.5 μm.

[0013] Preferably, the metal contact layer is composed of an adhesion layer and a contact layer. The adhesion layer is used to improve the bonding force between the metal contact layer and the detector and achieve ohmic contact with the semiconductor, and the connection layer is used to achieve the matching of the infrared detector with subsequent testing or interconnection processes.

[0014] Preferably, the thickness of the indium arsenide contact layer is 100 nm.

[0015] Preferably, the thickness of the aluminum antimonide arsenide barrier layer is 200 nm.

[0016] Preferably, the thickness of the indium arsenide absorption layer is 2 μm.

[0017] Preferably, the thickness of the indium arsenide substrate is 345 μm.

[0018] Preferably, the diameter of a single photosensitive element is 150 μm; the center distance of the photosensitive elements is 250 μm.

[0019] Preferably, the etching depth of the photosensitive element is 1.8 μm.

[0020] Preferably, the scale of the photosensitive element array is 32×32.

[0021] Preferably, the passivation protection layer is an alumina layer.

[0022] Preferably, the thickness of the passivation protection layer is 40 nm.

[0023] The size of the metal contact layer array is 32×32, and the pattern is a number of rings with an inner diameter of 100 μm and an outer diameter of 140 μm to ensure that the front of the photosensitive element receives sufficient light.

[0024] Preferably, the adhesion layer is a Cr layer and the connection layer is an Au layer.

[0025] Preferably, the thickness of the adhesion layer is 15 - 30 nm.

[0026] Preferably, the thickness of the connection layer is 300 nm.

[0027] The number of the common electrode platforms is 64.

[0028] Preferably, a single common electrode platform is a rectangle with a length of 250 μm and a width of 100 μm.

[0029] Preferably, the distance between adjacent common electrode platforms and the photosensitive element array is 300 μm.

[0030] The several top electrodes and the several bottom electrodes are parallel to each other.

[0031] The several top electrodes climb from the substrate to the top of the common electrode platform through the side wall of the common electrode platform.

[0032] The several bottom electrodes are in direct contact with the substrate and climb from the substrate to the top of the common electrode platform through the side wall of the common electrode platform.

[0033] Preferably, the number of the top electrodes is 32.

[0034] Preferably, the number of the bottom electrodes is 32.

[0035] Preferably, the width of each top electrode or bottom electrode is 20 μm, and the distance between adjacent parallel electrodes is 25 μm;

[0036] Preferably, the material of the several parallel electrodes is Cr / Au, and the thickness is 30 nm / 300 nm.

[0037] To implement a back-illuminated mid-wave infrared retina-like detector array at room temperature, an indium pillar interconnection layer needs to be added to the above technical solution.

[0038] The indium pillar interconnection layer corresponds to each photosensitive element and the common electrode platform surface.

[0039] Optionally, the indium pillar interconnection layer includes a plurality of indium pillars, the indium pillar pattern is a ring with a diameter of 140 μm, and the indium pillar pattern corresponds to the photosensitive element and the common electrode one by one; the height of the indium pillar is 4-5 μm.

[0040] In a second aspect, the present invention also provides a method for manufacturing the room-temperature mid-wave infrared retina-like detector described in the above technical solution, including the following steps:

[0041] An indium arsenide absorption layer, an aluminum arsenide antimonide barrier layer, and an indium arsenide contact layer are sequentially grown on an indium arsenide substrate to obtain an epitaxial wafer;

[0042] A plurality of photosensitive elements and a plurality of common electrode platform surfaces are fabricated on the epitaxial wafer;

[0043] A passivation protection layer is fabricated on the epitaxial wafer;

[0044] A metal contact layer and a parallel electrode layer are fabricated on the epitaxial wafer to obtain the room-temperature mid-wave infrared retina-like detector array.

[0045] In some embodiments of the present invention, in order to implement a back-illuminated room-temperature mid-wave infrared retina-like detector array, after fabricating the metal contact layer and the parallel electrode layer on the epitaxial wafer, a step of fabricating an indium pillar interconnection layer is further included.

[0046] In a third aspect, the present invention provides an application of the room-temperature mid-wave infrared retina-like detector array described in the above technical solution, for detecting in the 2 μm - 3.5 μm mid-wave infrared band.

[0047] In a fourth aspect, the present invention provides an application of the room-temperature mid-wave infrared retina-like detector array described in the above technical solution, applied to a sensing and computing integrated neural network.

[0048] The sensing and computing integrated neural network adjusts the light response rate of each photosensitive element by applying different voltage sequences to achieve the adjustment of the neural network weights. The light response rate R of the room-temperature mid-wave infrared retina-like detector represents the network weight value, the light intensity P is used as the input signal of the network, and the generated photocurrent I is used as the output of the first-layer network. According to the formula I i = ∑ i R ij P i , sensing-internal computing is achieved.

[0049] Compared with the prior art, the present invention has the following beneficial effects:

[0050] (1) The present invention innovatively uses an indium arsenide barrier structure to fabricate a room-temperature mid-wave infrared retina-like detector array, achieving room-temperature reconfigurable positive and negative linear optical responses in the short and mid-wave infrared band of 2μm - 3.5μm. Both the positive and negative optical response rates are higher than ±0.1 A / W. The backend can be combined with a memristor to achieve sensing, computing, and classification functions.

[0051] (2) The present invention proposes a preparation method and application of a room-temperature mid-wave infrared retina-like detector array. It innovatively uses an nBn-type barrier layer structure to achieve reconfigurable positive and negative optical responses, realizing the advantages of indium arsenide in room-temperature operation, high detectivity, and high reliability. It also achieves a high degree of integration with the backend circuit process, resulting in a room-temperature mid-wave infrared retina-like detector array with high repeatability. Finally, a room-temperature mid-wave infrared retina-like sensing and computing chip with recognition function is realized. Description of the Drawings

[0052] Figure 1 It is a cross-sectional schematic diagram of the room-temperature mid-wave infrared retina-like detector of the present invention. Among them, on the indium arsenide substrate, 1 - indium arsenide absorption layer, 2 - aluminum antimonide arsenide barrier layer, 3 - indium arsenide contact layer, 4 - aluminum oxide passivation protection layer, 5 - metal contact layer;

[0053] Figure 2 It is the energy band diagram of the room-temperature mid-wave infrared retina-like detector of the present invention. Among them, 1 - indium arsenide absorption layer, 2 - aluminum antimonide arsenide barrier layer, 3 - indium arsenide contact layer;

[0054] Figure 3 It is the preparation flow chart of the normal-incidence room-temperature mid-wave infrared retina-like detector array in Example 1. Among them, 6 - SiNx hard mask.

[0055] Figure 4 It is the top-view structural schematic diagram of the normal-incidence room-temperature mid-wave infrared retina-like detector array obtained in Example 1. Among them, 4 - aluminum oxide passivation protection layer, 5 - metal contact layer, 7 - top electrode, 8 - common electrode mesa, 9 - bottom electrode;

[0056] Figure 5 It is the recognition optical path diagram of the pattern "0" of the room-temperature mid-wave infrared retina-like detector array of the present invention. Among them, A - light source, B - beam expander, C - pattern "0", D - room-temperature mid-wave infrared retina-like detector sensing and computing chip, E - lock-in amplifier, F - oscilloscope, G - neural network ROIC circuit with memory weight function;

[0057] Figure 6 It is the response peak band of the room-temperature mid-wave infrared retina-like detector of the present invention.

[0058] Figure 7 It is the positive and negative optical response curves of the room-temperature mid-wave infrared retina-like detector of the present invention.

[0059] Figure 8 Schematic diagram of the neural network structure of the room-temperature mid-wave infrared retina-like detection and computing chip of the present invention;

[0060] Figure 9 Weight distribution diagram of pattern "0" of the room-temperature mid-wave infrared retina-like detection array of the present invention;

[0061] Figure 10 Recognition output current result of pattern "0" of the room-temperature mid-wave infrared retina-like detector array of the present invention;

[0062] Figure 11 Weight distribution diagram of pattern "1" of the room-temperature mid-wave infrared retina-like detection array of the present invention;

[0063] Figure 12 Recognition output current result of pattern "1" of the room-temperature mid-wave infrared retina-like detector array of the present invention. Detailed implementation manners

[0064] To make the present invention more obvious and understandable, preferred embodiments are hereby described in detail in conjunction with the accompanying drawings as follows.

[0065] The present invention provides a room-temperature mid-wave infrared retina-like detection array, which has 1024 photosensitive element units. The photosensitive element adopts an nBn (n-type semiconductor - barrier layer - n-type semiconductor) stacked barrier structure, which can fully suppress the dark current and noise of the infrared detector at room temperature and achieve positive and negative light responses at room temperature. Each photosensitive element is prepared by ICP etching, depositing a passivation protection layer, depositing a metal contact layer, depositing a plurality of top electrodes, a plurality of bottom electrodes, and a plurality of common electrodes, and the recognition function can be realized by combining with a memristor ROIC circuit.

[0066] The scale of the photosensitive element array is 32×32, the diameter of a single photosensitive element is 150μm, the center pitch of the photosensitive elements is 250μm, the metal contact layer is a ring with an inner diameter of 120μm and an outer diameter of 140μm, the number of a plurality of top electrodes is 32, the number of a plurality of bottom electrodes is 32, the width of each top electrode and bottom electrode is 20μm, and the distance between adjacent top electrodes and bottom electrodes is 25μm.

[0067] Embodiment 1

[0068] This embodiment provides a normal-incidence room-temperature mid-wave infrared retina-like detector array, and its preparation method is as follows (the process flow is as Figure 3 shown):

[0069] Using the method of molecular beam epitaxy (MBE), an epitaxial layer is successively grown on an indium arsenide substrate with a thickness of 345μm, including a 2μm indium arsenide absorption layer, a doping concentration of 1.2×1016 ; A 200 nm aluminum indium arsenide barrier layer with a doping concentration of 1.8×10 15 and a 100 nm indium arsenide top contact layer with a doping concentration of 1×10 18 .

[0070] On the surface of the epitaxial material, SiN is grown using plasma enhanced chemical vapor deposition (PECVD) x as a hard mask with a mask thickness of 250 nm.

[0071] AZ5214 photoresist is evenly applied on the surface of the hard mask, and a photosensitive surface and a common electrode mesa structure are drawn on its surface through a laser direct writing device. Among them, the graphic structure is drawn using L-edit software. The size of the photosensitive surface array is 32×32, the diameter of the photosensitive surface is 150 μm, the center distance of the photosensitive surfaces is 250 μm, and the size of the common electrode mesa is a rectangle with a length of 250 μm and a width of 100 μm. AZ300MIF developer is used for development.

[0072] The photoresist pattern is transferred to the SiN hard mask using a reactive ion etching (RIE) device. The epitaxial wafer is placed in acetone for 24 hours and then taken out, rinsed with deionized water for 10 s and dried with nitrogen, and then put into an oxygen plasma asher to clean the surface.

[0073] The epitaxial wafer is etched using an inductively coupled plasma reactive ion etching (ICPRIE) device to transfer the pattern on the SiN x onto the epitaxial layer, and the etching depth is 1.8 μm.

[0074] The excess SiN x hard mask is completely removed, and the photosensitive surface and the common electrode are prepared.

[0075] Aluminum oxide is deposited using an atomic layer deposition (ALD) device to prepare a passivation protection layer with a deposition thickness of 40 nm.

[0076] AZ5214 photoresist is evenly applied on the surface of the passivation protection layer, and a metal contact layer structure and several bottom electrodes are drawn on its surface through a laser direct writing device. The size of the metal contact layer array is 32×32, the pattern is a ring with an inner diameter of 120 μm and an outer diameter of 140 μm, the number of bottom electrodes is 32, the length is 7950 μm, and the width is 20 μm. AZ300MIF developer is used for development.

[0077] The epitaxial wafer is placed in a buffered hydrofluoric acid solution (BOE, NH4F:HF = 6:1) for 50 s, then rinsed with deionized water for 30 s and dried with nitrogen, and the photoresist pattern is transferred to the passivation protection layer.

[0078] Place the epitaxial wafer in acetone for 20 min, then wash it with deionized water for 10 s, and dry it with nitrogen gas.

[0079] Evenly apply LOR20B support glue on the epitaxial wafer, and then evenly apply AZ5214 photoresist. Use a laser direct writing device to draw several metal contact layers, several top electrodes, several bottom electrodes, and a common electrode mesa on its surface. Among them, the top electrode and the bottom electrode are parallel and equal to each other, and the number of both is 32, the length is 7950 μm, and the width is 20 μm.

[0080] After sequentially depositing 30 nm of Cr and 300 nm of Au using a magnetron-sputtering device, soak it in acetone for 24 hours for stripping, take it out and dry it with nitrogen gas. The preparation of the mid-wave infrared retina-like detector array at room temperature is completed. The cross-sectional schematic diagram is as Figure 1 shown; its energy band diagram is as Figure 2 shown; its top-view structural schematic diagram is as Figure 4 shown.

[0081] Example 2

[0082] This example provides a back-illuminated mid-wave infrared retina-like detector array, and its preparation method is as follows:

[0083] Adopt the method of molecular beam epitaxy (MBE) to sequentially grow epitaxial layers on an indium arsenide substrate with a thickness of 330 μm, including a 2-μm indium arsenide absorption layer with a doping concentration of 1.2×10 17 ; a 200-nm aluminum indium arsenide barrier layer with a doping concentration of 1.8×10 16 and a 150-nm indium arsenide top contact layer with a doping concentration of 1×10 18 .

[0084] Use plasma enhanced chemical vapor deposition (PECVD) to grow SiN x on the surface of the epitaxial material as a hard mask, and the mask thickness is 300 nm.

[0085] Evenly apply AZ5214 photoresist on the surface of the hard mask, and use a laser direct writing device to draw a photosensitive surface and a common electrode mesa structure on its surface. Among them, the graphic structure is drawn using L-edit software. The size of the photosensitive surface array is 32×32, the diameter of the photosensitive surface is 200 μm, the distance between the photosensitive surfaces is 250 μm, and the size of the common electrode is a rectangle with a length of 250 μm and a width of 150 μm. Develop it using AZ300MIF developer.

[0086] Use a reactive ion etching (RIE) device to transfer the photoresist pattern to the SiN hard mask, take out the epitaxial wafer after placing it in acetone for 24 hours, rinse it with deionized water for 10 s and then dry it with nitrogen gas, and then put it into an oxygen plasma asher to clean the surface.

[0087] Etch the epitaxial wafer using an inductively coupled plasma reactive ion etching (ICP RIE) device, and transfer the pattern on the SiN x above to the epitaxial layer with an etching depth of 2 μm.

[0088] Use a reactive ion etching (RIE) device to completely remove the excess SiN x hard mask, and the photosensitive surface and the common electrode are prepared.

[0089] Use an atomic layer deposition (ALD) device to deposit aluminum oxide to prepare a passivation protection layer with a deposition thickness of 40 nm.

[0090] Uniformly apply AZ5214 photoresist on the surface of the passivation protection layer, and draw a metal contact layer structure and several bottom electrodes on its surface through a laser direct writing device. The metal contact layer array size is 32×32, the pattern is a ring with an inner diameter of 120 μm and an outer diameter of 140 μm, the number of bottom electrodes is 32, the length is 7950 μm, the width is 20 μm, and AZ300MIF developer is used for development.

[0091] Put the epitaxial wafer into a buffered hydrofluoric acid solution (BOE, NH4F:HF = 7:1) for 1 min, then rinse with deionized water for 30 s, dry with nitrogen, and transfer the photoresist pattern to the passivation protection layer.

[0092] Put the epitaxial wafer in acetone for 20 min, then clean with deionized water for 10 s, and dry with nitrogen.

[0093] Uniformly apply LOR20B support glue on the epitaxial wafer, and then uniformly apply AZ5214 photoresist. Draw several metal contact layers, several top electrodes, several bottom electrodes, and a common electrode mesa on its surface through a laser direct writing device. Among them, the top electrodes and the bottom electrodes are parallel and equal to each other, the number of both is 32, the length is 7950 μm, and the width is 20 μm.

[0094] Use a magnetron sputtering device to sequentially deposit 30 nm of Cr and 300 nm of Au, then soak in acetone for 24 hours for stripping, take it out and dry with nitrogen.

[0095] Put the epitaxial wafer in NMP solution and soak for 10 minutes, then take it out and dry with nitrogen.

[0096] Uniformly apply AZ1500 photoresist on the epitaxial wafer, and then uniformly apply AZ4620 photoresist. Draw an indium pillar interconnection layer on its surface through a laser direct writing device. The pattern is a ring with a diameter of 140 μm, and the indium pillar pattern corresponds to the photosensitive element and the common electrode one by one.

[0097] After depositing 5-μm indium columns using a thermal evaporation device, the sample was soaked in acetone for 24 hours for lift-off, then taken out and dried with nitrogen gas. The preparation of the back-illuminated room-temperature mid-wave infrared retina-like detector array was completed.

[0098] Then, through a standardized interconnection and thinning process, a complete room-temperature mid-wave infrared retina-like sensing and computing detection system was prepared.

[0099] Performance Testing

[0100] Test Example 1

[0101] Randomly select a photosensitive unit from the room-temperature mid-wave infrared retina-like detector array obtained in Example 1 for testing the peak response wavelength. As Figure 6 shown, the results show that the device has very good responses in both the short-wave and mid-wave bands between 2 μm and 3.4 μm wavelengths, and the cut-off wavelength of the device is 3.5 μm.

[0102] Test Example 2

[0103] Randomly select a photosensitive unit from the room-temperature mid-wave infrared retina-like detector array obtained in Example 1 for testing the variable incident light laser power. Plot the curves of photocurrent and optical power at different voltages V. As Figure 7 shown, it can be seen that positive and negative optical responses are achieved.

[0104] Test Example 3

[0105] Conduct a pattern "0 / 1" recognition test on the room-temperature mid-wave infrared retina-like detector array obtained in Example 1. The test optical path diagram is as Figure 5 shown, and the test results are as Figure 10 and Figure 12 shown. First, connect the room-temperature mid-wave infrared retina-like detector array to a neural network ROIC circuit with memory weight function. The schematic diagram of the neural network structure is as Figure 8 shown, and the weight distribution is as Figure 9 and Figure 11 shown. During the test, the incident light is generated by an ultrafast laser tuner, passed through a beam expander to magnify the light spot to the same size as the pattern, then passed through a special mask template of pattern "0" equal in size to the array, and then enters the room-temperature mid-wave infrared retina-like detector array. The array outputs a signal, which is converted and amplified by a lock-in amplifier and input into an oscilloscope. The pattern information is judged by the waveform of the oscilloscope. As Figure 10 and Figure 12 can be seen, the waveforms of pattern "0" and pattern "1" show obvious differences, thus realizing the recognition of 0 / 1 patterns.

[0106] The above are only the preferred embodiments of the present invention, and do not impose any formal or substantial limitations on the present invention. It should be noted that for those of ordinary skill in the art, without departing from the premise of the present invention, several improvements and supplements can still be made, and these improvements and supplements should also be regarded as the protection scope of the present invention.

Claims

1. A room-temperature mid-wave infrared retina-like detector, characterized in that, It includes a semiconductor epitaxial wafer, and the semiconductor epitaxial wafer is of an nBn stacked barrier type structure, including an indium arsenide absorption layer, an aluminum arsenide antimonide barrier layer, and an indium arsenide contact layer that are sequentially grown on an indium arsenide substrate; the semiconductor epitaxial wafer is etched into a plurality of photosensitive element arrays by ICP etching; the photosensitive element array includes a deposited passivation protection layer, a metal contact layer, a parallel electrode layer, and a plurality of common electrode mesa; the detector is a front incidence type or a back incidence type.

2. The mid-wave infrared retina-like detector at room temperature according to claim 1, wherein The thickness of the indium arsenide substrate is 345 μm, the thickness of the indium arsenide absorption layer is 2 μm, the thickness of the aluminum arsenide antimonide barrier layer is 200 nm, and the thickness of the indium arsenide contact layer is 100 nm; The passivation protection layer is an alumina layer, and the thickness of the passivation protection layer is 40 nm; The array size of the metal contact layer is 32×32, and the pattern is a plurality of rings with an inner diameter of 120 μm and an outer diameter of 140 μm to ensure that the front of the photosensitive element receives sufficient light.

3. The mid-wave infrared retina-like detector at room temperature according to claim 1, characterized in that The metal contact layer includes an adhesion layer and a contact layer.

4. The mid-wave infrared retina-like detector at room temperature according to claim 3, wherein The thickness of the adhesion layer is 15 - 30 nm, and the thickness of the connection layer is 300 nm; the adhesion layer is a Cr layer, and the connection layer is an Au layer.

5. The mid-wave infrared retina-like detector at room temperature according to claim 1, wherein, The scale of the photosensitive element array is 32×32, the diameter of each photosensitive element is 150 μm, and the spacing distance between each photosensitive element is 250 μm; the number of the bottom electrodes and the top electrodes are 32 respectively, the width of each bottom electrode is 20 μm, and the width between the adjacent top electrode and the bottom electrode is 25 μm.

6. The mid-wave infrared retina-like detector at room temperature according to claim 1, characterized in that, The number of the common electrode mesa is 64, and they are located on the left and right sides of the photosensitive element array; a single common electrode mesa is a rectangle with a length of 250 μm and a width of 100 μm.

7. The mid-wave infrared retina-like detector at room temperature according to claim 1, characterized in that The parallel electrode layer includes a plurality of mutually parallel bottom electrodes and a plurality of mutually parallel top electrodes on the substrate, and the plurality of top electrodes climb from the substrate to the top of the common electrode through the side wall of the common electrode; The plurality of bottom electrodes are in direct contact with the substrate and climb from the substrate to the top of the common electrode through the side wall of the common electrode; The bottom electrodes and the top electrodes are parallel to each other.

8. The mid-wave infrared retina-like detector at room temperature according to any one of claims 1 to 7, characterized in that When the detector is of the back incidence type, the photosensitive element array further includes a deposited indium pillar interconnection layer.

9. The preparation method of the room temperature mid-wave infrared retinal-like detector according to any one of claims 1-7, characterized in that, It includes the following steps: Grow an indium arsenide absorption layer, an aluminum arsenide antimonide barrier layer, and an indium arsenide contact layer on the indium arsenide substrate in sequence to obtain an epitaxial wafer; Prepare a plurality of photosensitive elements and a plurality of common electrodes on the epitaxial wafer; Prepare a passivation protection layer on the epitaxial wafer; Prepare a metal contact layer and a parallel electrode layer on the epitaxial wafer to obtain a front incidence room temperature mid-wave infrared retina-like detector array; or after preparing the metal contact layer and the parallel electrode layer on the epitaxial wafer, prepare an indium pillar interconnection layer to obtain a back incidence room temperature mid-wave infrared retina-like detector array.

10. Use of the mid-wave infrared retina-like detector according to any one of claims 1-7, characterized in that, It is used for the detection of the 2 μm - 3.5 μm mid-wave infrared band.

11. Use of the mid-wave infrared retinal-like detector according to any one of claims 1-7, characterized in that, Applied to the sensing and computing integrated neural network, the sensing and computing integrated neural network regulates the light response rate of each photosensitive element by applying different voltage sequences to achieve the weight adjustment of the neural network. The light response rate R of the room-temperature mid-wave infrared retina-like detector represents the network weight value, the light intensity P is used as the input signal of the network, and the generated photocurrent I is used as the output of the first-layer network. According to the formula I i = ∑ i R ij P i , in-sensor computing is realized.

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