Composite material, thin film, preparation method of thin film, photoelectric device and display device

Abstract

The invention discloses a composite material, a thin film, a preparation method of the thin film, a photoelectric device and a display device. The composite material comprises N-type inorganic semiconductor particles and a polythiophene compound, and the polythiophene compound has a structural formula shown in a formula (I): # imgabs0 #. The composite material comprises the N-type inorganic semiconductor particles and the polythiophene compound, and the polythiophene compound has a relatively high LUMO energy level; the polythiophene compound can effectively block the transmission of electrons, so that the polythiophene compound can effectively reduce the conductivity and the electron transmission capability of the N-type inorganic semiconductor particles, and the composite material has the conductivity and the electron transmission capability lower than those of the N-type inorganic semiconductor particles.

Description

Technical Field

[0001] The present application relates to the technical field of optoelectronic devices, and particularly relates to a composite material, a thin film, a preparation method thereof, an optoelectronic device, and a display device. Background Art

[0002] Inorganic semiconductor particles have excellent optoelectronic properties, such as high mobility, strong photoconductive properties, adjustable energy gap according to particle size, strong material absorption, etc., and are often used in functional thin films.

[0003] Among them, N-type inorganic semiconductor particles are considered to be one of the most popular materials for preparing the electron transport layer of high-efficiency optoelectronic devices due to their high electron mobility and hole blocking properties.

[0004] However, due to the high carrier transport efficiency of N-type inorganic semiconductor particles, using them in devices will cause unbalanced carrier injection in the devices, and thus lead to low device efficiency. Summary of the Invention

[0005] In view of this, the present application provides a composite material, aiming to reduce the electron transport efficiency of existing N-type inorganic semiconductor particles.

[0006] In a first aspect, the present application provides a composite material, including N-type inorganic semiconductor particles and a polythiophene compound, and the polythiophene compound has a structural formula shown in formula (I):

[0007]

[0008] Wherein:

[0009] n is an integer greater than or equal to 2;

[0010] R1 and R2 are each independently selected from hydrogen, deuterium, cyano, carbamoyl, halocarbonyl, formyl, isocyano, isocyanate, thiocyanate, isothiocyanate, hydroxy, nitro, amino, -CF3, -Cl, -Br, -F, -I, silyl, a substituted or unsubstituted straight-chain alkyl having 1 to 20 carbon atoms, a substituted or unsubstituted straight-chain alkoxy having 1 to 20 carbon atoms, a substituted or unsubstituted straight-chain thioalkoxy having 1 to 20 carbon atoms, a substituted or unsubstituted branched-chain alkyl having 3 to 20 carbon atoms, a substituted or unsubstituted branched-chain alkoxy having 3 to 20 carbon atoms, a substituted or unsubstituted branched-chain thioalkoxy having 3 to 20 carbon atoms, a substituted or unsubstituted cyclic alkyl having 3 to 20 carbon atoms, a substituted or unsubstituted cyclic alkoxy having 3 to 20 carbon atoms, a substituted or unsubstituted cyclic thioalkoxy having 3 to 20 carbon atoms, a substituted or unsubstituted keto group having 1 to 20 carbon atoms, a substituted or unsubstituted alkoxycarbonyl having 2 to 20 carbon atoms, a substituted or unsubstituted aryloxycarbonyl having 7 to 20 carbon atoms, a substituted or unsubstituted alkenyl having 2 to 20 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms, a substituted or unsubstituted aryloxy group having 6 to 60 ring atoms, a substituted or unsubstituted heteroaryloxy group having 5 to 60 ring atoms, or a combination of these groups.

[0011] Optionally, in some embodiments, R1 and R2 are each independently selected from hydrogen, deuterium, hydroxy, amino, -Cl, -Br, -F, -I, a substituted or unsubstituted straight-chain alkyl having 1 to 20 carbon atoms, a substituted or unsubstituted branched-chain alkyl having 3 to 20 carbon atoms, a substituted or unsubstituted cyclic alkyl having 3 to 20 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a combination of these groups.

[0012] Optionally, in some embodiments, R1 and R2 are each independently selected from hydrogen, deuterium, hydroxy, amino, -Cl, -Br, -F, -I, a substituted or unsubstituted straight-chain alkyl having 1 to 15 carbon atoms, a substituted or unsubstituted branched-chain alkyl having 3 to 15 carbon atoms, a substituted or unsubstituted cyclic alkyl having 3 to 15 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 30 ring atoms, or a combination of these groups.

[0013] Optionally, in some embodiments, the polythiophene compound has any one of the following structural formulas:

[0014]

[0015]

[0016] Among them, n1 to n11 are each independently selected from any integer greater than or equal to 2.

[0017] Optionally, in some embodiments, the N-type inorganic semiconductor particles and the polythiophene compound are connected together by van der Waals forces; and / or

[0018] The mass ratio of the polythiophene compound to the N-type inorganic semiconductor particles is (1 to 5):30.

[0019] Optionally, in some embodiments, the N-type inorganic semiconductor particles include one or more of doped metal oxide particles, undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The materials of the undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5. The metal oxides in the doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3. The doping elements in the doped metal oxide particles include one or several of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS. The IIIA-VA group semiconductor materials include one or more of InP, GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS; and / or

[0020] The average particle size range of the N-type inorganic semiconductor particles is 2 to 6 nm.

[0021] In a second aspect, an embodiment of the present application further provides a film, and the film includes the composite material.

[0022] In a third aspect, an embodiment of the present application further provides a method for preparing a film, including the following steps:

[0023] Provide a composite material dispersion liquid, and the composite material dispersion liquid includes the composite material and a second solvent;

[0024] Set the composite material dispersion liquid on a substrate and anneal to obtain the film.

[0025] Optionally, in some embodiments, the mass ratio of the composite material to the N inorganic semiconductor particles is (1 to 5):30; and / or

[0026] The second solvent includes alcohol solvents, and the alcohol solvents include one or more of methanol, ethanol, butanol, isopropanol, and acetone; and / or

[0027] The concentration of the composite material dispersion is 20 to 50 mg / mL; and / or

[0028] The annealing temperature range is 80 to 120 °C, and the time range is 10 to 30 min.

[0029] Fourthly, an embodiment of the present application further provides an optoelectronic device, including a stacked first anode, a first electron transport layer, and a first cathode, wherein the material of the first electron transport layer includes the composite material.

[0030] Optionally, in some embodiments, the first anode and the first cathode each independently include a doped metal oxide particle electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal single-element electrode, or an alloy electrode. The material of the doped metal oxide particle electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, or ZnS / Al / ZnS. The material of the metal single-element electrode includes one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg, and Ba; and / or

[0031] The optoelectronic device further includes a first light-emitting layer, the first light-emitting layer is located between the first anode and the first electron transport layer, and the material of the first light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material. The organic light-emitting material includes one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, thermally activated delayed material, polymer containing B-N covalent bond, hybrid local charge transfer excited state material, exciplex luminescent material, polyacetylene and its derivatives, poly(phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot light-emitting material includes one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite quantum dots. The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are each independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2. The perovskite quantum dots include doped or undoped inorganic perovskite quantum dots or organic-inorganic hybrid perovskite quantum dots. The structural general formula of the inorganic perovskite quantum dots is AMX3, where A is Cs; + ion, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ One or more of them, X is a halogen anion, including Cl - , Br - , I - One or more of them; the structural general formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, where B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2 + , Eu 2+ One or more of them, X is a halogen anion, including Cl - , Br - , I - One or more of them; and / or

[0032] The optoelectronic device further includes a first hole transport layer, which is located between the first anode and the first electron transport layer. The material of the first hole transport layer includes one or more of 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiro-NPB, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped p-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; and / or

[0033] The optoelectronic device further includes a first hole injection layer, which is located between the first anode and the first electron transport layer, and the material of the first hole injection layer includes one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide.

[0034] In a fifth aspect, an embodiment of the present application further provides an optoelectronic device, which includes a second anode and a second cathode arranged opposite to each other, and further includes N light-emitting unit layers and N-1 charge generation layers, and one charge generation layer is arranged between every two adjacent light-emitting unit layers, where N is an integer greater than or equal to 2;

[0035] Each light-emitting unit layer includes a stacked second hole transport layer, a second light-emitting layer, and a second electron transport layer, where the second light-emitting layer is located between the second hole transport layer and the second electron transport layer, and the second hole transport layer is located on the side of the second light-emitting layer close to the second anode, and the second electron transport layer is located on the side of the second light-emitting layer close to the second cathode;

[0036] Each charge generation layer includes a stacked hole generation layer and an electron generation layer. In each charge generation layer, the hole generation layer is arranged on the side of the electron generation layer close to the second anode;

[0037] Wherein, at least one of the second electron transport layers includes the composite material, and / or at least one of the electron generation layers includes the composite material.

[0038] Optionally, in some embodiments, the second anode and the second cathode each independently include a doped metal oxide particle electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal elemental electrode, or an alloy electrode. The material of the doped metal oxide particle electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, or ZnS / Al / ZnS. The material of the metal elemental electrode includes one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg, and Ba; and / or

[0039] The materials of each second light-emitting layer independently include one or more of an organic light-emitting material and a quantum dot light-emitting material. The organic light-emitting material includes one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, a diarylanthracene derivative, a stilbene aromatic derivative, a pyrene derivative, a fluorene derivative, a TBPe fluorescent material, a TTPX fluorescent material, a TBRb fluorescent material, a DBP fluorescent material, a delayed fluorescence material, a TTA material, a thermally activated delayed material, a polymer containing a B-N covalent bond, a hybrid locally charge transfer excited state material, an exciplex light-emitting material, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot light-emitting material includes one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite quantum dots. The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are each independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2. The perovskite quantum dots include doped or undoped inorganic perovskite quantum dots or organic-inorganic hybrid perovskite quantum dots. The structural general formula of the inorganic perovskite quantum dots is AMX3, where A is Cs; + ions, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni2+ 、 Cd 2+ 、 Cr 2+ 、 Mn 2+ 、 Co 2+ 、 Fe 2+ 、 Ge 2+ 、 Yb 2+ 、 Eu 2+ one or more of, X is a halogen anion, including Cl - 、 Br - 、 I - one or more of; the structural general formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, where B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ 、 Sn 2+ 、 Cu 2+ 、 Ni 2+ 、 Cd 2+ 、 Cr[[ID='42']] 2+ 、 Mn 2+ 、 Co 2+ 、 Fe 2+ 、 Ge 2+ 、 Yb 2 + 、 Eu 2+ one or more of, X is a halogen anion, including Cl - 、 Br - 、 I - one or more of; and / or

[0040] The materials of each second hole transport layer independently include one or more of 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiro-NPB, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-phenylene vinylene), aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped p-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; and / or

[0041] At least one light-emitting unit layer includes a second hole injection layer, the second hole injection layer is located on a side of the second hole transport layer away from the second light-emitting layer, and the materials of each second hole injection layer and the materials of each hole generation layer independently include one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide.

[0042] In a sixth aspect, the present application further provides a display device, including the above-mentioned optoelectronic device.

[0043] The composite material described in the present application includes the N-type inorganic semiconductor particles and the polythiophene compound. The polythiophene compound has a relatively high LUMO energy level and can effectively block the transport of electrons. Therefore, the polythiophene compound can effectively reduce the conductivity and electron transport ability of the N-type inorganic semiconductor particles, so that the composite material has a conductivity and electron transport ability lower than that of the N-type inorganic semiconductor particles. Description of the Drawings

[0044] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0045] Figure 1 is a flowchart of a preparation method of a composite material provided by an embodiment of the present application;

[0046] Figure 2 is a flowchart of a preparation method of a thin film provided by an embodiment of the present application;

[0047] Figure 3 is a schematic structural diagram of an optoelectronic device provided by an embodiment of the present application;

[0048] Figure 4 is a schematic structural diagram of another optoelectronic device provided by an embodiment of the present application;

[0049] Figure 5 is a schematic structural diagram of yet another optoelectronic device provided by an embodiment of the present application.

[0050] Reference Signs:

[0051] Optoelectronic device 100; first anode 10; first electron transport layer 20; first cathode 30; first light-emitting layer 40, first hole transport layer 50; first hole injection layer 60; optoelectronic device 200; second anode 201; second cathode 202; light-emitting unit layer 203; second hole transport layer 2031; second light-emitting layer 2032; second electron transport layer 2033; second hole injection layer 2034; charge generation layer 204; hole generation layer 2041; electron generation layer 2042. Detailed implementation

[0052] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation manners described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0053] In the present application, unless otherwise stated, the orientation terms such as "upper" and "lower" generally refer to the upper and lower in the actual use or working state of the device, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of the present application, the term "including" means "including but not limited to". The terms first, second, third, etc. are only used as labels and do not impose numerical requirements or establish an order.

[0054] In the present application, "and / or" describes the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. Where A and B can be singular or plural.

[0055] In the present application, "at least one" means one or more, and "multiple" means two or more. "At least one kind", "at least one of the following items (pieces)" or similar expressions refer to any combination of these items, including any combination of single item (piece) or plural items (pieces). For example, "at least one of a, b, or c", or, "at least one of a, b, and c" can both represent: a, b, c, a - b (i.e., a and b), a - c, b - c, or a - b - c, where a, b, and c can be single or multiple respectively.

[0056] In the present application, when forming another layer "on" a certain layer, the so-called "on" is a broad concept, which may mean that the formed another layer is adjacent to the certain layer, or may mean that there are other spacer structure layers between the another layer and the certain layer. For example, when forming a second electrode "on" the first carrier functional layer, the so-called "on" may mean that the formed second electrode is adjacent to the first carrier functional layer, or may mean that there are other spacer structure layers between the second electrode and the first carrier functional layer, such as a light-emitting layer.

[0057] Various embodiments of the present application may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be construed as a rigid limitation on the scope of the present application; therefore, it should be considered that the described range description has specifically disclosed all possible sub-ranges and single values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, which applies regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited numbers (fractions or integers) within the indicated range.

[0058] Since the carrier transport efficiency of N-type inorganic semiconductor particles is relatively high, when applied as an electron transport layer material in optoelectronic devices, it will cause the injection of electrons to be higher than that of holes, resulting in an imbalance in electron-hole injection and affecting the current efficiency of the device.

[0059] The technical solution of the present application is as follows:

[0060] In a first aspect, an embodiment of the present application provides a composite material, including N-type inorganic semiconductor particles and a polythiophene compound, and the polythiophene compound has a structural formula shown in formula (I):

[0061]

[0062] Wherein:

[0063] n is an integer greater than or equal to 2;

[0064] R1 and R2 are each independently selected from, but not limited to, hydrogen, deuterium, cyano, carbamoyl, halocarbonyl, formyl, isocyano, isocyanate, thiocyanate, isothiocyanate, hydroxy, nitro, amino, -CF3, -Cl, -Br, -F, -I, silyl, a substituted or unsubstituted straight-chain alkyl having 1 to 20 carbon atoms, a substituted or unsubstituted straight-chain alkoxy having 1 to 20 carbon atoms, a substituted or unsubstituted straight-chain thioalkoxy having 1 to 20 carbon atoms, a substituted or unsubstituted branched-chain alkyl having 3 to 20 carbon atoms, a substituted or unsubstituted branched-chain alkoxy having 3 to 20 carbon atoms, a substituted or unsubstituted branched-chain thioalkoxy having 3 to 20 carbon atoms, a substituted or unsubstituted cyclic alkyl having 3 to 20 carbon atoms, a substituted or unsubstituted cyclic alkoxy having 3 to 20 carbon atoms, a substituted or unsubstituted cyclic thioalkoxy having 3 to 20 carbon atoms, a substituted or unsubstituted keto group having 1 to 20 carbon atoms, a substituted or unsubstituted alkoxycarbonyl having 2 to 20 carbon atoms, a substituted or unsubstituted aryloxycarbonyl having 7 to 20 carbon atoms, a substituted or unsubstituted alkenyl having 2 to 20 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms, a substituted or unsubstituted aryloxy group having 6 to 60 ring atoms, a substituted or unsubstituted heteroaryloxy group having 5 to 60 ring atoms, or a combination of these groups.

[0065] In some embodiments, R1 and R2 are each independently selected from, but not limited to, hydrogen, deuterium, hydroxy, amino, -Cl, -Br, -F, -I, a substituted or unsubstituted straight-chain alkyl having 1 to 20 carbon atoms, a substituted or unsubstituted branched-chain alkyl having 3 to 20 carbon atoms, a substituted or unsubstituted cyclic alkyl having 3 to 20 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a combination of these groups.

[0066] In some embodiments, R1 and R2 are each independently selected from, but not limited to, hydrogen, deuterium, hydroxy, amino, -Cl, -Br, -F, -I, a substituted or unsubstituted straight-chain alkyl having 1 to 15 carbon atoms, a substituted or unsubstituted branched-chain alkyl having 3 to 15 carbon atoms, a substituted or unsubstituted cyclic alkyl having 3 to 15 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 30 ring atoms, or a combination of these groups.

[0067] As an example, the polythiophene compound has any one of the following structural formulas:

[0068]

[0069] Wherein, n1 to n11 are each independently selected from any integer greater than or equal to 2.

[0070] Among them, the compound shown in Formula 1-1 is poly(3-methylthiophene), the compound shown in Formula 1-2 is poly(3-butylthiophene-2,5-diyl), the compound shown in Formula 1-3 is poly(3-hexylthiophene-2,5-diyl) (P3HT), the compound shown in Formula 1-4 is poly(3-octylthiophene-2,5-diyl), the compound shown in Formula 1-5 is poly(3-decylthiophene-2,5-diyl), the compound shown in Formula 1-6 is poly(3-dodecylthiophene-2,5-diyl), the compound shown in Formula 1-7 is poly(3-hydroxyethylaminomethylthiophene), the compound shown in Formula 1-8 is poly(3-butylaminomethylthiophene), the compound shown in Formula 1-9 is poly(3-bromomethylthiophene), the compound shown in Formula 1-10 is poly(3-cyclohexyl-4-methylthiophene-2,5-diyl), and the compound shown in Formula 1-11 is poly(3,4-diphenylthiophene).

[0071] The N-type inorganic semiconductor particles and the polythiophene compound are connected together by van der Waals forces.

[0072] The composite material described in this application includes the N-type inorganic semiconductor particles and the polythiophene compound. The polythiophene compound has a relatively high LUMO energy level and can effectively block the transmission of electrons. Therefore, the polythiophene compound can effectively reduce the conductivity and electron transport ability of the N-type inorganic semiconductor particles, making the composite material have a conductivity and electron transport ability lower than that of the N-type inorganic semiconductor particles.

[0073] In some embodiments, in the composite material, the mass ratio of the polythiophene compound to the N-type inorganic semiconductor particles is (1 to 5):30. For example, 1:30, 1.5:30, 2:30, 2.5:30, 3:30, 3.5:30, 4:30, 4.5:30, 5:30, etc. Within the range of this mass ratio, the conductivity and electron transport efficiency of the N-type inorganic semiconductor particles can be appropriately reduced, so that the composite material has appropriate conductivity and electron transport efficiency.

[0074] The N-type inorganic semiconductor particles include, but are not limited to, one or more of doped metal oxide particles, undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The materials of the undoped metal oxide particles include, but are not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5. The metal oxides in the doped metal oxide particles include, but are not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, and the doping elements in the doped metal oxide particles include, but are not limited to, one or several of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga. The IIB-VIA group semiconductor materials include, but are not limited to, one or more of ZnS, ZnSe, CdS. The IIIA-VA group semiconductor materials include, but are not limited to, one or more of InP, GaP. The IB-IIIA-VIA group semiconductor materials include, but are not limited to, one or more of CuInS, CuGaS.

[0075] In some embodiments, the average particle size range of the N-type inorganic semiconductor particles is 2-6 nm.

[0076] In a second aspect, please refer to Figure 1 , embodiments of the present application further provide a preparation method of the composite material, including the following steps:

[0077] Step S11: Provide the N-type inorganic semiconductor particles, the polythiophene compound, and a first solvent;

[0078] Step S12: Mix to connect the polythiophene compound to the surface of the N-type inorganic semiconductor particles to obtain a composite material.

[0079] The first solvent includes, but is not limited to, alcohol solvents, and the alcohol solvents include, but are not limited to, one or more of methanol, ethanol, butanol, isopropanol, acetone.

[0080] In a third aspect, embodiments of the present application further provide a film, and the film includes the composite material described above.

[0081] In a fourth aspect, please refer to Figure 2 , embodiments of the present application further provide a preparation method of a film, including the following steps:

[0082] Step S21: Provide a composite material dispersion liquid, and the composite material dispersion liquid includes the composite material described above and a second solvent;

[0083] Step S22: Set the composite material dispersion liquid on a substrate and anneal it to obtain a thin film.

[0084] The N-type inorganic semiconductor particles and the composite material are as described above and will not be elaborated here.

[0085] The mass ratio of the composite material to the N inorganic semiconductor particles is (1 - 5):30. For example, 1:30, 1.5:30, 2:30, 2.5:30, 3:30, 3.5:30, 4:30, 4.5:30, 5:30, etc.

[0086] The second solvent includes but is not limited to alcohol solvents, and the alcohol solvents include but are not limited to one or more of methanol, ethanol, butanol, isopropanol, and acetone.

[0087] The dosage of the solvent is not limited as long as it can fully disperse the composite material. In at least some embodiments, the concentration of the composite material dispersion liquid is 20 - 50 mg / mL. Within this concentration range, the mixed solution has a good film-forming effect.

[0088] The substrate can be a substrate, release film, or transfer film known for film formation. The substrate can be a rigid substrate or a flexible substrate. In some embodiments, the material of the substrate can include but is not limited to one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0089] It can be understood that the substrate can also be a prefabricated optoelectronic device, such as a substrate including a cathode, or a stacked structure including a stacked anode, hole functional layer, and light-emitting unit layer.

[0090] The annealing temperature range is 80 - 120 °C. For example, 80 °C, 90 °C, 100 °C, 110 °C, 120 °C, etc. The annealing time range is 10 - 30 min. For example, 10 min, 15 min, 20 min, 25 min, 30 min, etc. Within this temperature and time range, there is a good film-forming effect, which is beneficial to preparing a thin film with good crystallinity and excellent performance.

[0091] Fifth aspect, please refer to Figure 3 , an optoelectronic device 100 provided by an embodiment of the present application includes a first anode 10, a first electron transport layer 20, and a first cathode 30 stacked in sequence, wherein the material of the first electron transport layer 20 includes the composite material, or the first electron transport layer 20 is the thin film described above.

[0092] In some embodiments, the thickness range of the first electron transport layer 20 is 10 - 60 nm.

[0093] The material of the first electron transport layer 20 of the optoelectronic device 100 described in this application is the composite material described above. The composite material has lower conductivity and electron transport performance compared to N-type inorganic semiconductor particles, which is beneficial to the electron-hole balance of the device and can effectively improve the efficiency and lifespan of the optoelectronic device 100.

[0094] Please refer to Figure 4 , in some embodiments, the optoelectronic device 100 further includes a first light-emitting layer 40, and the first light-emitting layer 40 is located between the first anode 10 and the first electron transport layer 20.

[0095] In some embodiments, the optoelectronic device 100 further includes a first hole transport layer 50, and the first hole transport layer 50 is located between the first anode 10 and the first light-emitting layer 40.

[0096] In some embodiments, the optoelectronic device 100 further includes a first hole injection layer 60, and the first hole injection layer 60 is located between the first anode 10 and the first hole transport layer 50.

[0097] It can be understood that the optoelectronic device 100 is a light-emitting device including a single light-emitting unit layer.

[0098] In a sixth aspect, please refer to Figure 5 , this application embodiment further provides another optoelectronic device 200, which includes a relatively arranged second anode 201 and a second cathode 202, and further includes N light-emitting unit layers 203 and N - 1 charge generation layers 204. A charge generation layer 204 is disposed between every two adjacent light-emitting unit layers 203. N is an integer greater than or equal to 2.

[0099] Each light-emitting unit layer 203 includes a stacked second hole transport layer 2031, a second light-emitting layer 2032, and a second electron transport layer 2033. Among them, the second light-emitting layer 2032 is located between the second hole transport layer 2031 and the second electron transport layer 2033, and the second hole transport layer 2031 is located on the side of the second light-emitting layer 2032 close to the second anode 201, and the second electron transport layer 2033 is located on the side of the second light-emitting layer 2032 close to the second cathode 202.

[0100] Each charge generation layer 204 includes a stacked hole generation layer 2041 and an electron generation layer 2042. In each charge generation layer 204, the hole generation layer 2041 is disposed on the side of the electron generation layer 2042 close to the second anode 201.

[0101] At least one second electron transport layer 2033 includes the composite material described above, and / or, at least one electron generation layer 2042 includes the composite material described above.

[0102] In some embodiments, at least one light-emitting unit layer 203 includes a second hole injection layer 2034, and the second hole injection layer 2034 is located on a side of the second hole transport layer 2031 away from the second light-emitting layer 2032.

[0103] In at least some embodiments, the N-type inorganic semiconductor particles of the electron generation layer 2042 do not include a doping element, and the N-type inorganic semiconductor particles of the second electron transport layer 2033 adjacent to the electron generation layer 2042 include a doping element. Thus, it is beneficial to improve the conductivity of the electron generation layer 2042, reduce charge loss, reduce recombination sites during the charge generation process of the charge generation layer 204, thereby improving the charge separation efficiency, and further improving the current efficiency of the optoelectronic device 200.

[0104] The first anode 10, the first cathode 30, the second anode 201, and the second cathode 202 are electrodes known in the art for optoelectronic devices. For example, they may independently include but are not limited to doped metal oxide electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, metal elemental electrodes, or alloy electrodes. The material of the doped metal oxide electrode may include but is not limited to one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), aluminum-doped magnesium oxide (AMO), and cadmium-doped zinc oxide. The composite electrode is an electrode formed by laminating two or more conductive material layers, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc. Here, " / " represents a laminated structure. For example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer, and an AZO layer laminated in sequence. The material of the metal elemental electrode may include but is not limited to one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg, and Ba. The alloy electrode includes but is not limited to Au:Mg alloy electrodes and Ag:Mg alloy electrodes.

[0105] In some embodiments, among the first anode 10 and the first cathode 30, as well as the second anode 201 and the second cathode 202, the electrode far from the electron transport layer is an electrode with a relatively high work function, such as, but not limited to, a doped metal oxide electrode with a relatively high work function, a metal elemental electrode with a relatively high work function, and a carbon nanotube electrode. The metal elemental electrode with a relatively high work function can be selected from, but not limited to, Ni, Pt, Au, Ag, Ir, etc.

[0106] In some embodiments, among the first anode 10 and the first cathode 30, as well as the second anode 201 and the second cathode 202, the electrode close to the electron transport layer is an electrode with a relatively low work function, such as, but not limited to, a metal elemental electrode with a relatively low work function, a composite electrode with a relatively low work function, and an alloy electrode with a relatively low work function. The metal elemental electrode with a relatively low work function can be Ca, Ba, Al, Mg, etc. The composite electrode with a relatively low work function can be Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc. The alloy electrodes with a relatively low work function are Au:Mg and Ag:Mg, etc.

[0107] The materials of the first light-emitting layer 40 and each second light-emitting layer 2032 are each independently selected from one or more of, but not limited to, organic light-emitting materials and quantum dot light-emitting materials.

[0108] The organic light-emitting materials can include, but not limited to, one or more of CBP:Ir(mppy)3 (4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium(III)]), TCTX:Ir(mmpy) (4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium]), diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, TADF (thermally activated delayed) materials, polymers containing B-N covalent bonds, HLCT (hybrid local charge transfer excited state) materials, Exciplex (excimer complex) light-emitting materials, polyacetylene and its derivatives, poly(phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives.

[0109] The quantum dot light-emitting materials can include, but not limited to, one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite quantum dots.

[0110] The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots may respectively include, but are not limited to, one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds may include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds may include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds may include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds may include, but are not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0111] As an example, the quantum dots of the core-shell structure may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS.

[0112] The perovskite quantum dots may include, but are not limited to, doped or undoped inorganic perovskite quantum dots, or organic-inorganic hybrid perovskite quantum dots. The general structural formula of the inorganic perovskite quantum dots is AMX3, where A is a Cs + ion, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ among one or more of them, and X is a halogen anion, including Cl - , Br - , I - among one or more of them. The general structural formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, where B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2 + , Eu 2+ among one or more of them, and X is a halogen anion, including Cl - , Br - , I - among one or more of them.

[0113] The materials of the first hole transport layer 50 and each of the second hole transport layers 2031 may also be materials known in the art for hole transport layers. For example, they may be independently selected from, but not limited to, 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tris(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), spiro-NPB, poly(phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazol-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p)-phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped p-type gallium nitride, doped or undoped CrO3, doped or undoped CuO, one or more of them.

[0114] The materials of the first hole injection layer 60, the second hole injection layer 2034, and the hole generation layer 2041 can be materials known in the art for hole injection layers. For example, they can be independently selected from but not limited to 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3 (PEDOT:PSS:s-MoO3), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinodimethane (F4-TCQN), copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide, or one or more of them.

[0115] It can be understood that the optoelectronic device can also be provided with some functional layers that are conventionally used in optoelectronic devices and are helpful for improving the performance of the optoelectronic device, such as an electron blocking layer, a hole blocking layer, an electron injection layer, an interface modification layer, etc.

[0116] It can be understood that the materials of the respective layers of the optoelectronic device can be adjusted according to the light emission requirements of the optoelectronic device.

[0117] In some embodiments, the optoelectronic device further includes a substrate, which is disposed on the side of the anode away from the light-emitting layer, or the substrate is disposed on the side of the cathode away from the light-emitting layer.

[0118] The substrate can be a rigid substrate or a flexible substrate. In some embodiments, the materials of the substrate can include but not be limited to one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0119] It can be understood that the optoelectronic device 100 and the optoelectronic device 200 can be a normal optoelectronic device or an inverted optoelectronic device. The optoelectronic device 100 and the optoelectronic device 200 can be quantum dot optoelectronic devices (QLED) or organic optoelectronic devices (OLED).

[0120] In a seventh aspect, the present application also relates to a display device, which includes the optoelectronic device 100 or the optoelectronic device 200.

[0121] The display device may be any electronic product with a display function, including but not limited to smartphones, tablet computers, laptop computers, digital cameras, digital video cameras, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Among them, smart wearable devices may be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0122] The present application will be specifically described below through specific embodiments. The following embodiments are only partial embodiments of the present application and do not limit the present application.

[0123] Composite Material Embodiment 1

[0124] The composite material of this embodiment includes Mg-doped ZnO particles and poly(3-hexylthiophene-2,5-diyl) (the compound shown in Formula 1-3, P3HT), and the mass ratio of poly(3-hexylthiophene-2,5-diyl) to Mg-doped ZnO particles is 1:30.

[0125] The preparation method of the composite material of this embodiment includes:

[0126] Providing the Mg-doped ZnO particles, P3HT, and ethanol, mixing them to obtain the composite material, where the mass ratio of P3HT to Mg-doped ZnO particles is 1:30.

[0127] Composite Material Embodiment 2

[0128] This embodiment is basically the same as Composite Material Embodiment 1, except that in this embodiment, the mass ratio of P3HT to Mg-doped ZnO particles is 3:30.

[0129] Composite Material Embodiment 3

[0130] This embodiment is basically the same as Composite Material Embodiment 1, except that in this embodiment, the mass ratio of P3HT to Mg-doped ZnO particles is 5:30.

[0131] Composite Material Embodiment 4

[0132] This embodiment is basically the same as Composite Material Embodiment 1, except that in this embodiment, poly(3-bromomethylthiophene) (the compound shown in Formula 1-9) is used to replace P3HT in Embodiment 1.

[0133] Composite Material Embodiment 5

[0134] This embodiment is basically the same as Composite Material Embodiment 1, except that in this embodiment, poly(3,4-diphenylthiophene) (the compound shown in Formula 1-11) is used to replace P3HT in Embodiment 1.

[0135] Composite Material Comparative Example 1

[0136] The material of this comparative example is the Mg-doped ZnO particles in Example 1.

[0137] The electron mobility of the composite materials of Composite Material Examples 1 to 5 and the material of Composite Material Comparative Example 1 was tested, and the test results are shown in Table 1.

[0138] The test method for electron mobility is as follows: Control QE PRO and Keithley 2400 through LabView to build a set of QLED efficiency test systems. The current density-voltage curve of the single-carrier transport thin film device (EOD) is tested by this system. Through the current density-voltage curve, the space charge limited current (SCLC) region in the curve is obtained, and then according to the formula:

[0139] J = (9 / 8)ε r ε0μ e V 2 / d 3

[0140] Calculate the electron mobility, where J represents the current density, with the unit mA cm -2 ; ε r represents the relative dielectric constant, ε0 represents the vacuum dielectric constant; μ e represents the electron mobility, with the unit cm 2 V -1 s -1 ; V represents the driving voltage, with the unit V; d represents the film thickness, with the unit m.

[0141] Table 1:

[0142] <![CDATA[Electron mobility (*10 -6 cm 2 V -1 s -1 )]]> Composite Material Example 1 5.26 Composite Material Example 2 5.02 Composite Material Example 3 4.93 Composite Material Example 4 5.15 Composite Material Example 5 4.85 Composite Material Comparative Example 1 7.11

[0143] As can be seen from Table 1:

[0144] Compared with the material of Composite Material Comparative Example 1, the composite materials of Composite Material Examples 1 to 5 have lower electron mobility. It can be seen that doping polythiophene compounds in N-type inorganic semiconductor particles can effectively reduce the electron mobility of N-type inorganic semiconductor particles. The reason may be that polythiophene compounds have a relatively high LUMO energy level, which can effectively block the transport of electrons.

[0145] Single Emitting Layer Device Example 1

[0146] A glass substrate with an ITO first anode having a thickness of 110 nm is provided. The ITO conductive glass is cleaned with a cleaner to preliminarily remove the stains on the surface. Subsequently, it is ultrasonically cleaned in deionized water, isopropanol, acetone, and deionized water for 20 min respectively to remove the impurities on the surface. Finally, it is dried with high-purity nitrogen;

[0147] In a glove box, a PEDOT:PSS material with a solute content of 1.5 wt% was spin-coated on the first anode and annealed at 150 °C for 15 min to obtain a first hole injection layer with a thickness of 30 nm.

[0148] The TFB material was spin-coated on the first hole injection layer and annealed at 150 °C for 15 min to obtain a first hole transport layer with a thickness of 15 nm.

[0149] The ZnCdSe / ZnS quantum dot material was spin-coated on the first hole transport layer to obtain a light-emitting layer with a thickness of 30 nm.

[0150] The composite material of Composite Material Example 1 was dispersed in ethanol to obtain a dispersion, and the dispersion was spin-coated on the light-emitting layer and annealed at 80 °C for 10 min to obtain a first electron transport layer with a thickness of 40 nm.

[0151] Ag was evaporated on the first electron transport layer to obtain a cathode with a thickness of 100 nm.

[0152] Encapsulation was carried out in an environment where both the oxygen content and the water content were lower than 0.1 ppm to obtain a single light-emitting layer optoelectronic device.

[0153] Single light-emitting layer device Examples 2-5

[0154] Single light-emitting layer device Examples 2-5 are the same as Single light-emitting layer device Example 1, except that the composite materials of Composite Material Examples 2-5 were used respectively when preparing the first electron transport layer of Single light-emitting layer device Examples 2-5.

[0155] Single light-emitting layer device Comparative Example 1

[0156] Single light-emitting layer device Comparative Example 1 is the same as Single light-emitting layer device Example 1, except that Mg-doped ZnO particles of Composite Material Comparative Example 1 were used when preparing the first electron transport layer of Single light-emitting layer device Comparative Example 1.

[0157] The optoelectronic devices of Single light-emitting layer device Examples 1-5 and Single light-emitting layer device Comparative Example 1 were respectively subjected to current efficiency tests and EQE tests. The test results are shown in Table II.

[0158] Among them, the current efficiency was calculated by testing with a Keithley 2400 high-precision digital source meter, an Ocean Optic USB2000+ spectrometer, and an LS-160 luminance meter.

[0159] The test method for the external quantum efficiency (EQE) is as follows: Using a Fosda FPD optical property measurement device, an efficiency test system is built by controlling a QE PRO spectrometer, a Keithley 2400, and a Keithley 6485 through LabView to measure parameters such as voltage, current, brightness, and emission spectrum. The external quantum efficiency EQE of the device is obtained through calculation. The specific calculation formula is as follows:

[0160]

[0161] In the formula, ηe is the optical output coupling efficiency, ηr is the ratio of the number of recombined carriers to the number of injected carriers, χ is the ratio of the number of excitons generating photons to the total number of excitons, KR is the rate of the radiative process, and KNR is the rate of the non-radiative process.

[0162] Table II:

[0163] Current Efficiency (cd / A) EQE (%) Single Emitting Layer Device Example 1 10.52 12.87 Single Emitting Layer Device Example 2 11.80 14.32 Single Emitting Layer Device Example 3 10.72 12.82 Single Emitting Layer Device Example 4 10.24 12.64 Single Emitting Layer Device Example 5 11.30 14.30 Single Emitting Layer Device Comparative Example 1 7.11 9.66

[0164] As can be seen from Table II:

[0165] Compared with the optoelectronic device of the single-emitting layer device in Comparative Example 1, the optoelectronic devices of the single-emitting layer devices in Examples 1 to 5 have higher current efficiency and higher luminous efficiency. It can be seen that when the composite material of this embodiment is used in the electron transport layer of the single-emitting layer device, the current efficiency of the device can be effectively improved. The reason may be that the polythiophene compound in the composite material has a relatively high LUMO energy level, which can effectively block the transport of electrons. Therefore, the polythiophene compound can effectively reduce the electron transport ability of the N-type inorganic semiconductor particles, making the composite material have an electron transport ability lower than that of Mg-doped ZnO, effectively promoting the electron-hole balance of the device, and thus improving the current efficiency of the device.

[0166] Example 1 of the multi-emitting layer device

[0167] The cleaned ITO second anode glass substrate is treated with UVO for 15 minutes;

[0168] A PEDOT:PSS material with a solute content of 1.5 wt% is spin-coated on the ITO second anode glass substrate and heated at 150 °C for 15 minutes to obtain a second hole injection layer with a thickness of 30 nm;

[0169] A TFB material is spin-coated on the second hole injection layer and heated at 150 °C for 15 minutes to obtain a second hole transport layer with a thickness of 15 nm;

[0170] A ZnCdSe / ZnS quantum dot material is spin-coated on the second hole transport layer to obtain a second emitting layer with a thickness of 30 nm;

[0171] A composite material dispersion solution with a doping mass ratio of P3HT:ZMO = 1:30 was spin-coated on the second light-emitting layer. The concentration of P3HT in the composite material solution was 1 mg / mL, and the concentration of ZMO was 30 mg / mL. It was heated at 80 °C for 10 min to obtain a second electron transport layer with a thickness of 40 nm.

[0172] Undoped ZnO with a concentration of 10 mg / mL was spin-coated on the second electron transport layer and heated at 80 °C for 10 min to obtain an electron generation layer with a thickness of 10 nm.

[0173] PEDOT material was spin-coated on the electron generation layer and heated at 150 °C for 15 min to obtain a hole generation layer with a thickness of 15 nm.

[0174] TFB material with a concentration of 8 mg / ml was spin-coated on the hole generation layer and heated at 150 °C for 15 min to obtain a second hole transport layer with a thickness of 15 nm.

[0175] ZnCdSe / ZnS quantum dot material was spin-coated on the hole transport layer to obtain a second light-emitting layer with a thickness of 30 nm.

[0176] ZMO material with a concentration of 10 mg / mL was spin-coated on the second light-emitting layer and heated at 80 °C for 10 min to obtain a second electron transport layer with a thickness of 40 nm.

[0177] Ag material was evaporated on the second electron transport layer to obtain a second cathode with a thickness of 100 nm.

[0178] It was encapsulated in an environment where both the oxygen content and the water content were lower than 0.1 ppm to obtain a multi-light-emitting layer optoelectronic device.

[0179] Examples 2 - 5 of multi-light-emitting layer devices

[0180] Examples 2 - 5 of multi-light-emitting layer devices are the same as Example 1 of multi-light-emitting layer devices, except that the composite materials of Material Examples 2 - 5 were used respectively when preparing the second electron transport layer of Device Examples 2 - 5.

[0181] Example 6 of multi-light-emitting layer devices

[0182] Example 6 of multi-light-emitting layer devices is the same as Example 2 of multi-light-emitting layer devices, except that 20 nm of undoped ZnO was used as the electron generation layer in Example 6 of multi-light-emitting layer devices.

[0183] Comparative Example 1 of multi-light-emitting layer devices

[0184] Comparative Example 1 of multi-light-emitting layer devices is the same as Example 1 of multi-light-emitting layer devices, except that the material of Comparative Example 1 was used when preparing the second electron transport layer of Comparative Example 1 of multi-light-emitting layer devices.

[0185] Comparative Example 2 of Multi-Light-Emitting Layer Device

[0186] Comparative Example 2 of the multi-light-emitting layer device is the same as Example 1 of the multi-light-emitting layer device, except that the device of Comparative Example 2 of the multi-light-emitting layer device does not include an electron generation layer.

[0187] The current efficiency test and EQE test were respectively carried out on the optoelectronic devices of Examples 1-6 of the multi-light-emitting layer device and Comparative Examples 1-2 of the multi-layer light-emitting layer device. The test results are shown in Table III.

[0188] Table III:

[0189] Current Efficiency (cd / A) EQE (%) Multi - layer Emitting Layer Device Example 1 18.55 27.11 Multi - layer Emitting Layer Device Example 2 20.69 29.41 Multi - layer Emitting Layer Device Example 3 16.31 24.63 Multi - layer Emitting Layer Device Example 4 17.33 25.25 Multi - layer Emitting Layer Device Example 5 16.65 24.50 Multi - layer Emitting Layer Device Example 6 17.83 25.76 Multi - layer Emitting Layer Device Comparative Example 1 7.33 14.58 Multi - layer Emitting Layer Device Comparative Example 2 8.05 16.37

[0190] As can be seen from Table III:

[0191] Compared with the devices of Comparative Example 1 of the multi-layer light-emitting layer device, the devices of Examples 1-5 of the multi-layer light-emitting layer device have higher current efficiency and higher luminous efficiency. It can be seen that when the composite material of this embodiment is used as the electron transport layer of a single light-emitting layer device, the current efficiency of the device can be effectively improved. The reason may be that the polythiophene compound in the composite material has a relatively high LUMO energy level, which can effectively block the electron transport. Therefore, the polythiophene compound can effectively reduce the electron transport ability of the N-type inorganic semiconductor particles, making the composite material have an electron transport ability lower than that of Mg-doped ZnO, effectively promoting the electron-hole balance of the device, and then improving the current efficiency of the device;

[0192] Compared with the devices of Comparative Example 2 of the multi-layer light-emitting layer device, the devices of Example 6 of the multi-layer light-emitting layer device have higher current efficiency and higher luminous efficiency. The reason may be that: the N-type inorganic semiconductor particles in the electron generation layer of Example 6 of the multi-layer light-emitting layer device do not include doping elements, and the N-type inorganic semiconductor particles in the second electron transport layer adjacent to the electron generation layer include doping elements. In this way, it is beneficial to improve the conductivity of the electron generation layer, reduce charge loss, reduce the recombination sites in the charge generation process of the charge generation layer, thereby improving the charge separation efficiency, and then improving the current efficiency of the optoelectronic device.

[0193] The technical solutions provided by the embodiments of the present application have been introduced in detail above. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A composite material, characterized in that, Comprising N-type inorganic semiconductor particles and a polythiophene compound, the polythiophene compound having a structural formula shown in formula (I): Wherein: n is an integer greater than or equal to 2; R1 and R2 are each independently selected from hydrogen, deuterium, cyano, carbamoyl, halocarbonyl, formyl, isocyano, isocyanate, thiocyanate, isothiocyanate, hydroxyl, nitro, amino, -CF3, -Cl, -Br, -F, -I, silyl, a substituted or unsubstituted straight-chain alkyl group having 1 to 20 C atoms, a substituted or unsubstituted straight-chain alkoxy group having 1 to 20 C atoms, a substituted or unsubstituted straight-chain thioalkoxy group having 1 to 20 C atoms, a substituted or unsubstituted branched-chain alkyl group having 3 to 20 C atoms, a substituted or unsubstituted branched-chain alkoxy group having 3 to 20 C atoms, a substituted or unsubstituted branched-chain thioalkoxy group having 3 to 20 C atoms, a substituted or unsubstituted cyclic alkyl group having 3 to 20 C atoms, a substituted or unsubstituted cyclic alkoxy group having 3 to 20 C atoms, a substituted or unsubstituted cyclic thioalkoxy group having 3 to 20 C atoms, a substituted or unsubstituted keto group having 1 to 20 C atoms, a substituted or unsubstituted alkoxycarbonyl group having 2 to 20 C atoms, a substituted or unsubstituted aryloxycarbonyl group having 7 to 20 C atoms, a substituted or unsubstituted alkenyl group having 2 to 20 C atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms, a substituted or unsubstituted aryloxy group having 6 to 60 ring atoms, a substituted or unsubstituted heteroaryloxy group having 5 to 60 ring atoms, or a combination of these groups.

2. The composite material according to claim 1, wherein R1 and R2 are each independently selected from hydrogen, deuterium, hydroxyl, amino, -Cl, -Br, -F, -I, a substituted or unsubstituted straight-chain alkyl group having 1 to 20 C atoms, a substituted or unsubstituted branched-chain alkyl group having 3 to 20 C atoms, a substituted or unsubstituted cyclic alkyl group having 3 to 20 C atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a combination of these groups.

3. The composite material according to claim 1, characterized in that, R1 and R2 are each independently selected from hydrogen, deuterium, hydroxyl, amino, -Cl, -Br, -F, -I, a substituted or unsubstituted straight-chain alkyl group having 1 to 15 C atoms, a substituted or unsubstituted branched-chain alkyl group having 3 to 15 C atoms, a substituted or unsubstituted cyclic alkyl group having 3 to 15 C atoms, a substituted or unsubstituted aromatic group having 6 to 30 ring atoms, or a combination of these groups.

4. The composite material according to claim 1, characterized in that The polythiophene compound has any one of the following structural formulas: Wherein, n1 to n11 are each independently selected from any integer greater than or equal to 2.

5. The composite material according to claim 1, characterized in that The N-type inorganic semiconductor particles and the polythiophene compound are connected together by van der Waals forces; and / or The mass ratio of the polythiophene compound to the N-type inorganic semiconductor particles is (1 to 5):

30.

6. The composite material according to claim 1, characterized in that The N-type inorganic semiconductor particles include one or more of doped metal oxide particles, undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The materials of the undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5. The metal oxides in the doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3. The doping elements in the doped metal oxide particles include one or several of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS. The IIIA-VA group semiconductor materials include one or more of InP, GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS; and / or The average particle size range of the N-type inorganic semiconductor particles is 2 to 6 nm.

7. A film, characterized in that, The thin film includes the composite material according to any one of claims 1 to 6.

8. A method for preparing a thin film, characterized in that, Comprising the following steps: Providing a composite material dispersion liquid, which includes the composite material according to any one of claims 1 to 6 and a second solvent; Depositing the composite material dispersion liquid and annealing to obtain the thin film.

9. The thin film according to claim 8, wherein The mass ratio of the composite material to the N inorganic semiconductor particles is (1 to 5):30; and / or The second solvent includes an alcohol solvent, and the alcohol solvent includes one or more of methanol, ethanol, butanol, isopropanol, acetone; and / or The concentration of the composite material dispersion liquid is 20 to 50 mg / mL; and / or The temperature range of the annealing is 80 to 120 °C, and the time range is 10 to 30 min.

10. An optoelectronic device, characterized in that, Comprising a stacked first anode, a first electron transport layer, and a first cathode, wherein the material of the first electron transport layer includes the composite material according to any one of claims 1 to 6.

11. The optoelectronic device according to claim 10, wherein The first anode and the first cathode each independently include a doped metal oxide particle electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal elemental electrode, or an alloy electrode. The material of the doped metal oxide particle electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, or ZnS / Al / ZnS. The material of the metal elemental electrode includes one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg, and Ba; and / or The optoelectronic device further includes a first light-emitting layer, the first light-emitting layer is located between the first anode and the first electron transport layer, and the material of the first light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material. The organic light-emitting material includes one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, thermally activated delayed material, polymer containing B-N covalent bond, hybrid local charge transfer excited state material, exciplex luminescent material, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot light-emitting material includes one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite quantum dots. The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are each independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2. The perovskite quantum dots include doped or undoped inorganic perovskite quantum dots or organic-inorganic hybrid perovskite quantum dots. The structural general formula of the inorganic perovskite quantum dots is AMX3, where A is Cs; + ions, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ one or more of, X is a halogen anion, including Cl - 、Br - 、I - one or more of; the structural general formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, where B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2 + 、Eu 2+ one or more of, X is a halogen anion, including Cl - 、Br - 、I - one or more of; and / or The optoelectronic device further includes a first hole transport layer, the first hole transport layer is located between the first anode and the first electron transport layer, and the material of the first hole transport layer includes one or more of 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiro-NPB, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p)-phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped p-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; and / or The optoelectronic device further includes a first hole injection layer, which is located between the first anode and the first electron transport layer. The material of the first hole injection layer includes one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide.

12. An optoelectronic device, characterized in that, It includes a second anode and a second cathode which are oppositely arranged, and further includes N light-emitting unit layers and N - 1 charge generation layers. One charge generation layer is arranged between every two adjacent light-emitting unit layers, where N is an integer greater than or equal to 2; Each light-emitting unit layer includes a stacked second hole transport layer, a second light-emitting layer, and a second electron transport layer. Among them, the second light-emitting layer is located between the second hole transport layer and the second electron transport layer, and the second hole transport layer is located on the side of the second light-emitting layer close to the second anode, and the second electron transport layer is located on the side of the second light-emitting layer close to the second cathode; Each charge generation layer includes a stacked hole generation layer and an electron generation layer. In each charge generation layer, the hole generation layer is arranged on the side of the electron generation layer close to the second anode; Among them, at least one of the second electron transport layers includes the composite material according to any one of claims 1 to 6, and / or at least one of the electron generation layers includes the composite material according to any one of claims 1 to 6.

13. The optoelectronic device according to claim 12, wherein The second anode and the second cathode each independently include a doped metal oxide particle electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal single electrode, or an alloy electrode. The material of the doped metal oxide particle electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, or ZnS / Al / ZnS. The material of the metal single electrode includes one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg, and Ba; and / or The materials of each second light-emitting layer independently include one or more of an organic light-emitting material and a quantum dot light-emitting material. The organic light-emitting material includes one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, thermally activated delayed material, polymer containing B-N covalent bond, hybrid local charge transfer excited state material, exciplex luminescent material, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot light-emitting material includes one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite quantum dots. The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are each independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2. The perovskite quantum dots include doped or undoped inorganic perovskite quantum dots or organic-inorganic hybrid perovskite quantum dots. The structural general formula of the inorganic perovskite quantum dots is AMX3, where A is Cs; + ion, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ one or more of, X is a halogen anion, including Cl - 、Br - 、I - one or more of; the structural general formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, where B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ one or more of, X is a halogen anion, including Cl - 、Br - 、I - one or more of; and / or The materials of each second hole transport layer independently include one or more of 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiro-NPB, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-phenylene vinylene), aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped p-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; and / or At least one light-emitting unit layer includes a second hole injection layer, and the second hole injection layer is located on a side of the second hole transport layer away from the second light-emitting layer. The material of each second hole injection layer and the material of each hole generation layer independently include one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide.

14. A display device, characterized in that, The optoelectronic device according to any one of claims 10 to 13 is included.

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