Multi-target co-sputtering apparatus with high-rate magnetron sputtering target gun and sputtering method

Abstract

The application discloses a multi-target-position co-sputtering device containing a high-speed magnetron sputtering target gun and a sputtering method, and particularly relates to the technical field of thin film preparation. The multi-target-position co-sputtering device containing the high-speed magnetron sputtering target gun comprises a reaction chamber composed of a cavity wall, a cavity bottom and a cavity cover; the cavity bottom is provided with four inclined two-inch target material magnetron sputtering assemblies and two horizontal four-inch target material magnetron sputtering assemblies; the horizontal assembly comprises a horizontally placed target material and a magnet carrier, a power supply and water cooling device and a horizontal target position transmission rod. A sputtering method comprises the following steps: (a) starting an in-situ heating device; (b) controlling a transmission motor to drive the horizontally placed target material and the magnet carrier; (c) activating the power supply and water cooling device to perform co-sputtering; and (d) stopping power supply after sputtering. The application improves sputtering and deposition efficiency, guarantees and optimizes thin film quality, meets the needs of industrial production, enhances process flexibility and adapts to the preparation needs of different types of thin films.

Description

Technical Field

[0001] This invention belongs to the field of thin film preparation technology, specifically relating to a multi-target co-sputtering device and sputtering method containing a high-speed magnetron sputtering target gun. Background Technology

[0002] In the field of thin film preparation, several mature methods have been developed, among which sputtering, chemical vapor deposition (CVD), and pulsed laser deposition (PLD) are widely used. Magnetron sputtering, with its unique advantages, occupies an important position in thin film preparation processes. It can deposit high-quality thin films at relatively low temperatures, and this method is easy to scale up, making it highly favored in many thin film preparation scenarios.

[0003] However, existing magnetron sputtering equipment has revealed a series of problems that urgently need to be solved in practical applications. First, the sputtering rate is relatively low, leading to longer production cycles and making it difficult to meet the growing market demand. Second, the low utilization rate of multiple targets results in material waste and increased production costs. Furthermore, the quality of the thin films is difficult to control effectively, causing fluctuations in the performance of the prepared films and making it impossible to consistently meet the production standards for high-performance thin films. These problems severely limit the further application of magnetron sputtering equipment in the field of high-performance thin film production.

[0004] With the rapid development of modern technology, the demand for high-performance thin films in numerous fields such as electronic devices, optical coatings, and sensors is increasing, placing more stringent requirements on the quality, density, and production efficiency of thin films. Therefore, the development of a novel, high-speed, multi-target magnetron sputtering apparatus is particularly urgent. By optimizing the target configuration and precisely controlling the sputtering process parameters, it is expected to effectively improve the quality and density of thin films, while significantly increasing production efficiency and reducing production costs. Such an apparatus can not only substantially improve the performance of thin films but also better meet the high-standard, large-scale production requirements in actual industrial production, which is of great significance for promoting the technological upgrading and development of related industries. Summary of the Invention

[0005] The purpose of this invention is to provide a multi-target co-sputtering device and sputtering method containing a high-rate magnetron sputtering target gun.

[0006] To achieve the above objectives, the present invention provides the following technical solution:

[0007] A multi-target co-sputtering device with a high-speed magnetron sputtering target gun includes: a reaction chamber, which consists of a chamber wall, a chamber bottom, and a chamber cover; the chamber cover is fixed to a motor drive device by a structural fastener, the drive part of which passes through the chamber cover and the in-situ heating device below, and is connected to the sample tray of the substrate to be coated by a bayonet; the in-situ heating device is separated from the substrate by a protective baffle, which is connected to the in-situ heating device by a bayonet.

[0008] The cavity bottom is equipped with four inclined two-inch target magnetron sputtering assemblies and two horizontal four-inch target magnetron sputtering assemblies. The two-inch target magnetron sputtering assembly includes an inclined target and magnet support, and a power supply and water cooling device connected thereto. The power supply and water cooling device is fixed to the cavity bottom by a vacuum protection component and extends to the outside through a connection window between the cavity bottom and the power supply and water cooling device. The horizontal assembly includes a horizontal target and magnet support, a power supply and water cooling device, and a horizontal target position transmission rod. The horizontal target position transmission rod is driven by a drive motor and fixed by a base.

[0009] The cavity has a laser annealing window at the center of the bottom, which is connected to an external laser annealing device; the cavity wall has an air inlet for introducing Ar and O2 gases used for sputtering.

[0010] Furthermore, the drive motor is regulated by a control unit, a signal transmission device, and a power supply device, all of which are fixed to the base by screws, and the power supply and water cooling device are connected to the base through a protective pipe.

[0011] Furthermore, the height between the cavity cover and the cavity bottom is adjustable from 0 to 800 mm, the height between the in-situ heating device and the cavity bottom is adjustable from 300 to 700 mm, and the height between the inclined target material and magnet support and the cavity bottom is adjustable from 0 to 700 mm.

[0012] Furthermore, the laser annealing window is connected to the bottom of the cavity via quartz and a vacuum seal, and has an energy density of 1-5 J / cm².

[0013] Furthermore, the power supply and water cooling device extends out of the cavity through the connection window between the bottom of the cavity and the power supply and water cooling device, and the vacuum protection component and the protection tube are detachable and sealed structures.

[0014] A sputtering method employing a multi-target co-sputtering device with a high-velocity magnetron sputtering target gun, comprising:

[0015] (a) Start the in-situ heating device to rotate the substrate to be coated and heat it to the set temperature;

[0016] (b) Control the drive motor to move the horizontally placed target and magnet support to below the substrate to be coated;

[0017] (c) Activate the power supply and water cooling system of the tilting and horizontal components for co-sputtering;

[0018] (d) After sputtering, stop the power supply, reset the target and magnet carrier horizontally, and anneal the substrate to be coated through the laser annealing window.

[0019] Furthermore, during co-sputtering, the tilt angle of the tilted target and magnet support is dynamically adjusted to 0-90°, and the horizontally placed target and magnet support undergo horizontal reciprocating motion during the growth cycle.

[0020] Furthermore, the in-situ heating device monitors the temperature of the substrate to be coated in real time and adjusts the heating power in real time.

[0021] Beneficial effects of this invention:

[0022] 1. Improve sputtering and deposition efficiency: The horizontal and tilted magnetron sputtering modules work together. The tilted module sputters at multiple angles to expand the target erosion area. Combined with the reciprocating motion of the target carrier in the horizontal module, the target utilization rate is improved. Multiple targets are simultaneously sputtered and deposited, which effectively improves the sputtering rate, shortens the thin film preparation time, and improves production efficiency.

[0023] 2. Ensuring and Optimizing Thin Film Quality: The in-situ heating system monitors the substrate temperature in real time, providing favorable conditions for thin film atomic migration. Combined with the dynamic adjustment of the tilting module angle and the periodic movement of the horizontal module, it ensures uniform deposition of thin film atoms, reducing stress concentration and lattice defects. The laser annealing device performs in-situ annealing after sputtering, further optimizing the thin film crystal structure and comprehensively improving the film quality and density.

[0024] 3. Meets the needs of industrial production: The equipment has a compact structure with four tilting magnetron sputtering modules arranged in a circle around the horizontal module, maximizing space utilization. The operating parameters of each module can be precisely controlled, and the endpoint position of the motion can be pre-programmed, enabling highly automated production, ensuring stable and consistent product quality, and meeting the requirements of large-scale, high-efficiency industrial production.

[0025] 4. Enhanced process flexibility: Key parameters in magnetron sputtering, such as heating temperature, tilt angle, target energy density, and annealing energy density, all have a wide range of adjustment. This allows the process to flexibly adapt to the preparation needs of different types of thin films and meet diverse high-performance thin film production scenarios. Attached Figure Description

[0026] Figure 1 Schematic diagram of the magnetron sputtering equipment provided in Embodiment 1 Figure 1 .

[0027] Figure 2 Schematic diagram of the magnetron sputtering equipment provided in Embodiment 1 Figure 2 .

[0028] Figure 3 Schematic diagram of the magnetron sputtering equipment provided in Embodiment 1 Figure 3 .

[0029] Figure 4 A schematic diagram of the assembly of the horizontally placed target material and magnet support 9 and the horizontal target position transmission rod 8.

[0030] Figure 5 A schematic diagram of the assembly of the tilted target material and magnet support 10 with the power supply and water cooling device 11.

[0031] Figure 6 A schematic diagram of the motor and transmission device connected to the horizontally placed target and magnet support.

[0032] Figure 7 This is the overall assembly drawing of the magnetron sputtering equipment.

[0033] Figure 8 The hysteresis loop of the NdFeB multilayer film obtained using the target material and growth conditions described in Example 1.

[0034] Figure 9 The image shows a cross-sectional SEM image of the NdFeB multilayer film obtained using the target material and growth conditions described in Example 1.

[0035] In the diagram, 1. Structural fixing component; 2. Motor transmission device; 3. Cavity cover; 4. In-situ heating device; 5. Substrate to be coated; 6. Cavity wall; 7. Cavity bottom; 8. Horizontal target transmission rod; 9. Horizontal target and magnet support; 10. Inclined target and magnet support; 11. Power supply and water cooling device; 12. Vacuum protection component; 13. Air inlet; 14. Connection window between cavity bottom and power supply and water cooling device; 15. Laser annealing window; 16. Signal transmission device; 17. Control unit; 18. Power supply device; 19. Drive motor; 20. Protective tube; 21. Base; 22. Protective baffle for in-situ heating device. Detailed Implementation

[0036] The preparation method of the present invention will be described in detail below with reference to the accompanying drawings. The examples given are only for explaining the present invention and are not intended to limit the scope of the present invention.

[0037] Example 1

[0038] I. Equipment Structure

[0039] The device described in this embodiment includes the following:

[0040] 1. The reaction chamber consists of a chamber wall 6, a chamber bottom 7, and a chamber cover 3. The chamber cover 3 is fitted with a motor drive device 2 via a structural fastener 1. The drive shaft passes through the chamber cover 3 and the in-situ heating device 4, and is connected to the sample tray via a bayonet to drive the substrate 5 to be coated to rotate. A removable in-situ heating device protective baffle 22 is provided between the in-situ heating device 4 and the substrate 5 to be coated.

[0041] 2. Cavity bottom 7 configuration: four inclined two-inch target material assemblies: including inclined target material and magnet support 10 and power supply and water cooling device 11, fixed by vacuum protection component 12, and extended outward from the cavity bottom and the power supply and water cooling device connection window 14.

[0042] Two horizontal four-inch target assemblies: including a horizontally placed target and magnet support 9, a power supply and water cooling device 11, and a horizontal target position transmission rod 8, driven by a transmission motor 19 fixed to the base 21.

[0043] The laser annealing window 15 is connected to the bottom of the cavity 7 via quartz and a vacuum seal, with an energy density of 1-5 J / cm².

[0044] An Ar / O2 inlet 13 is provided on the cavity wall 6.

[0045] 3. Adjustment mechanism:

[0046] The distance between the cavity cover 3 and the cavity bottom 7 is adjustable from 0 to 800 mm;

[0047] The height between the cavity cover 3 and the in-situ heating device 4 is adjustable from 300 to 700 mm;

[0048] The height between the cavity cover 3 and the tilted target and magnet support part 10 is adjustable from 0 to 700 mm.

[0049] 4. Control system:

[0050] The drive motor 19 is controlled by the control unit 17, the signal transmission device 16 and the power supply device 18 in a coordinated manner.

[0051] The power supply and water cooling device 11 is connected to the base 21 via a detachable protective tube 20.

[0052] II. Implementation of Sputtering Method

[0053] Prepare NdFeB multilayer films according to the following steps:

[0054] 1. Substrate processing:

[0055] a) Start the in-situ heating device 4 to rotate the substrate 5 to be coated and heat it to 500°C;

[0056] b) Monitor the temperature in real time and dynamically adjust the heating power.

[0057] 2. Target positioning:

[0058] a) Control the drive motor 19 to drive the horizontally placed target and magnet support 9 to move to 50mm below the substrate 5 to be coated;

[0059] b) Dynamically adjust the angle of the tilted target and magnet support from 10° to 45°.

[0060] 3. Co-sputtering process:

[0061] a) Open Ar gas inlet 13 and maintain a vacuum of 5×10⁻⁶. -5 Pa;

[0062] b) Activate the power supply and water cooling system 11 for all tilted and horizontal components, and perform multi-target co-sputtering: tilted target power density: 4.0 W / cm²; horizontal target power density: 4.5 W / cm²

[0063] The horizontally placed target and magnet support 9 reciprocate at a speed of 20 mm / s.

[0064] 4. Layer structure preparation:

[0065] (1) Deposit a Ta buffer layer (100 nm);

[0066] (2) Alternating deposition of NdFeB (500 nm) / Ta (9 nm) for 9 cycles;

[0067] (3) Final layer NdFeB (500nm);

[0068] (4) Ta capping layer (100nm).

[0069] 5. Post-processing:

[0070] a) Perform annealing at an energy density of 3J / cm² through laser annealing window 15;

[0071] b) Reset each target to its initial position.

[0072] III. Characterization of Experimental Results

[0073] like Figure 8 As shown in the SQUID test, a magnetization of 1.08T and a coercivity of 1.9T were obtained in the out-of-plane direction. The magnetization curve shows a nucleation-pinning hybrid mechanism. Figure 9 (SEM cross-section) shows a clear layered structure with a thickness of 4.9 μm and an interlayer interface smoothness of <2 nm.

[0074] The schematic diagram of the magnetron sputtering equipment provided in the embodiment is shown below. Figure 1-3 A schematic diagram of the assembly of the horizontally placed target material and magnet support 9 and the horizontal target position transmission rod 8 is shown below. Figure 4A schematic diagram of the assembly of the tilted target material and magnet support 10 with the power supply and water cooling device 11 is shown below. Figure 5 A schematic diagram of the motor and transmission device connecting the horizontally placed target and the magnet support is shown below. Figure 6 The overall assembly drawing of the magnetron sputtering equipment is shown below. Figure 7 .

[0075] The above description of the embodiments is provided to enable those skilled in the art to understand and use the invention. It will be apparent to those skilled in the art that various modifications can be made to these embodiments, and the general principles described herein can be applied to other embodiments without inventive effort. Therefore, the present invention is not limited to the above embodiments, and any improvements and modifications made by those skilled in the art based on the disclosure of the present invention without departing from the scope of the invention should be within the protection scope of the present invention.

Claims

1. A multi-target co-sputtering device containing a high-velocity magnetron sputtering target gun, characterized in that, include: The reaction chamber consists of a chamber wall (6), a chamber bottom (7), and a chamber cover (3). The chamber cover (3) is fixed to the motor drive device (2) by a structural fastener (1). Its drive part passes through the chamber cover (3) and the in-situ heating device (4) below, and is connected to the sample tray of the substrate to be coated (5) by a bayonet. The in-situ heating device (4) and the substrate to be coated (5) are separated by an in-situ heating device protective baffle (22), which is connected to the in-situ heating device (4) by a bayonet. The cavity bottom (7) is provided with four inclined two-inch target magnetron sputtering assemblies and two horizontal four-inch target magnetron sputtering assemblies; the two-inch target magnetron sputtering assembly includes an inclined target and magnet support part (10) and a power supply and water cooling device (11) connected thereto. The power supply and water cooling device (11) is fixed to the cavity bottom (7) by a vacuum protection part (12) and extends to the outside through the cavity bottom and the power supply and water cooling device connection window (14); the horizontal assembly includes a horizontal target and magnet support part (9), a power supply and water cooling device (11) and a horizontal target position transmission rod (8), and the horizontal target position transmission rod (8) is driven by a transmission motor (19) and fixed by a base (21); The bottom (7) of the cavity is provided with a laser annealing window (15) in the center, which is connected to the external laser annealing device; the cavity wall (6) is provided with an air inlet (13) for introducing Ar or O2 used for sputtering; The height between the cavity cover (3) and the cavity bottom (7) is adjustable from 0 to 800 mm; the height between the in-situ heating device (4) and the cavity bottom (7) is adjustable from 300 to 700 mm; the height between the inclined target material and magnet support part (10) and the cavity bottom (7) is adjustable from 0 to 700 mm; the laser annealing window (15) is connected to the cavity bottom (7) through quartz and vacuum sealing components, and the energy density is 1-5 J / cm³. 2 .

2. The multi-target co-sputtering device with a high-velocity magnetron sputtering target gun according to claim 1, characterized in that: The drive motor (19) is controlled by a control unit (17), a signal transmission device (16) and a power supply device (18), all of which are fixed to the base (21) by screws, and the power supply and water cooling device (11) are connected to the base (21) through a protective tube (20).

3. The multi-target co-sputtering device with a high-velocity magnetron sputtering target gun according to claim 1, characterized in that: The power supply and water cooling device (11) extends out of the cavity through the connection window (14) between the bottom of the cavity and the power supply and water cooling device, and the vacuum protection component (12) and the protection tube (20) are detachable and sealed structures.

4. A sputtering method, employing the multi-target co-sputtering equipment with a high-velocity magnetron sputtering target gun as described in any one of claims 1-3, characterized in that, include: (a) Start the in-situ heating device (4) to rotate the substrate (5) to be coated and heat it to the set temperature; (b) Control the drive motor (19) to drive the horizontally placed target and magnet support (9) to move below the substrate (5) to be coated; (c) Activate the power supply and water cooling system (11) of the tilt and horizontal components for co-sputtering; (d) After sputtering, stop the power supply, place the target and magnet carrier (9) horizontally and reset them, and anneal the substrate (5) to be coated through the laser annealing window (15).

5. The sputtering method according to claim 4, characterized in that: During co-sputtering, the tilt angle of the tilted target and magnet support (10) is dynamically adjusted to 0-90°, and the horizontally placed target and magnet support (9) reciprocate horizontally during the growth cycle.

6. The sputtering method according to claim 4, characterized in that: The in-situ heating device (4) monitors the temperature of the substrate (5) to be coated in real time and adjusts the heating power in real time.

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