Sensor connection structure and semiconductor processing equipment

Abstract

The invention provides a sensor connection structure and semiconductor processing equipment, relates to the technical field of semiconductor processing, and aims to solve the problem that plasma corrodes a sensor such as a vacuum gauge. The sensor connecting structure comprises a connecting body and an electrode assembly, the connecting body is provided with a channel, and the channel can communicate with a process cavity and a sensor; the electrode assembly comprises electrodes, the electrodes arranged in the channel in pairs are used for generating an electric field, the electric field intensity direction of the electric field intersects with the extending direction of the channel, and the electrodes and the connecting body are arranged in an insulated mode. The corrosion of plasma to the sensor can be reduced.

Description

Background Art

[0002] Semiconductor processes such as etching have relatively high requirements for the pressure conditions of the chamber. The related technology realizes pressure control by measuring the chamber pressure in real time with a pressure gauge and feeding it back to the pressure controller. A thin film gauge, also known as a vacuum gauge, is a common pressure gauge that can be used in a radio frequency environment. However, by-products such as negative ions, chlorine ions, and fluorine ions generated during the etching process will adhere to the thin film of the vacuum gauge, corrode the gauge film, cause the vacuum gauge to drift, and over time, it will reduce the service life of the gauge. Summary of the Invention

[0003] The first object of the present invention is to provide a sensor connection structure to solve the technical problem of corrosion of the sensor by existing plasma.

[0004] The sensor connection structure provided by the present invention is used to connect a sensor to a process chamber and includes:

[0005] A connection body having a channel that can communicate the process chamber and the sensor; and,

[0006] An electrode assembly including electrodes. The electrodes are arranged in pairs in the channel and are used to generate an electric field. The direction of the electric field intensity of the electric field intersects the extending direction of the channel, and the electrodes are insulated from the connection body.

[0007] In an optional technical solution, the direction of the electric field intensity of the electric field is perpendicular to the extending direction of the channel.

[0008] In an optional technical solution, the center of the cross-section of the channel is located between the two electrodes of each pair of electrodes.

[0009] In an optional technical solution, the electrode assembly further includes a conductor electrically connected to the electrodes, and the conductor is insulated from the connection body.

[0010] In an optional technical solution, the electrodes are electrode plates, and the conductor is connected to the central region of the opposite surfaces of the pair of electrode plates arranged in pairs.

[0011] In an optional technical solution, the inner peripheral surface of one end of the cavity wall hole of the process chamber wall where the channel is located has an insulating portion, and the electrodes are fixed on the insulating portion.

[0012] In an optional technical solution, the connection body includes an insulating pipeline, and the electrodes are fixed on the inner peripheral surface of the insulating pipeline.

[0013] In an optional technical solution, the insulating pipeline is configured to be fixedly sleeved in the cavity wall hole.

[0014] In an alternative technical solution, the inner wall of the insulating pipeline has at least a pair of parallel side walls, and the electrodes are located on the opposite surfaces of the parallel side walls in the insulating pipeline.

[0015] In an alternative technical solution, the electrodes are located inside the insulating pipeline, and along the extending direction of the channel, there are distances left between both ends of the electrodes and the end parts of the insulating pipeline respectively.

[0016] In an alternative technical solution, along the extending direction of the channel, the electrodes are located in the middle of the insulating pipeline.

[0017] In an alternative technical solution, the connecting body includes a metal pipeline, the metal pipeline is located on one side far from the insulating pipeline, and the metal pipeline and the insulating pipeline are communicated to form at least part of the channel.

[0018] In an alternative technical solution, the insulating pipeline is connected to the metal pipeline through a connecting piece, and the connecting piece is hermetically connected to the process chamber wall and the insulating pipeline.

[0019] In an alternative technical solution, the connecting piece has a connecting hole, one end of the connecting piece is connected to the outer peripheral surface of the insulating pipeline through the inner peripheral surface of the connecting hole, and the other end is connected to the inner peripheral surface of the metal pipeline through the outer peripheral surface of the connecting piece.

[0020] In an alternative technical solution, the connecting hole is a rectangular hole, and the insulating pipeline with a rectangular profile is inserted into the connecting hole; the inner peripheral surface of one end of the metal pipeline is circular, the outer peripheral surface of the other end of the connecting piece is a circumferential surface, and the other end of the connecting piece is inserted into the metal pipeline with a circular inner wall.

[0021] In an alternative technical solution, the electrodes are electrode plates;

[0022] and / or, the conductor is a metal probe.

[0023] In an alternative technical solution, the sensor connection structure further includes a control module, the control module includes a first relay, a second relay, and a capacitance measuring instrument, the first relay has a first normally open contact, and the second relay has a first normally closed contact; the first normally closed contact is connected in series with the capacitance measuring instrument and forms a first branch circuit, and the first branch circuit is electrically connected to the electrodes; one end of the first normally open contact is connected to a power supply, and the other end is connected to the second relay; the control module is configured to: in a power-off state, the first normally open contact is disconnected, and the first normally closed contact is conducted to supply the capacitance measuring instrument to measure the capacitance between the electrodes.

[0024] In an alternative technical solution, the sensor connection structure further includes a voltmeter, and the second relay further includes a second normally open contact. The second normally open contact is connected in series with the voltmeter to form a second branch, and the second branch is connected in parallel with the first branch. The second branch is electrically connected to the electrode. The control module is configured to: in the power supply state, the first normally open contact is turned on, and the second normally open contact is turned on for the voltmeter to measure the voltage between the electrodes.

[0025] The second object of the present invention is to provide a semiconductor processing equipment to solve the technical problem of plasma corrosion on the sensor.

[0026] The semiconductor processing equipment provided by the present invention includes a process chamber, a sensor, and a sensor connection structure according to any one of the claims. The sensor connection structure connects the sensor and the process chamber.

[0027] In an alternative technical solution, the process chamber has a connection part. The surface of the connection part is provided with an insulating layer and has a cavity wall hole. The cavity wall hole is connected to one end of the sensor connection structure, and the other end of the sensor connection structure is connected to the sensor.

[0028] In an alternative technical solution, the sensor includes a vacuum gauge.

[0029] The beneficial effects brought by the sensor connection structure and the semiconductor processing equipment of the present invention are as follows:

[0030] By providing a channel connecting the process chamber and the sensor, the sensing element of the sensor can sense the pressure change in the process chamber. When the pressure in the process chamber changes, the gas pressure in the channel will also change accordingly. By arranging electrodes in pairs in the channel, an electric field can be applied by the electrodes when the gas flows from the process chamber to the sensor along the channel, and the electric field intensity intersects with the extension direction of the channel. Therefore, charged particles in the gas, especially plasma, will move towards the electrodes, thereby reducing or even significantly reducing or eliminating the charged particles moving to the sensing element of the sensor, thereby reducing the corrosion suffered by the sensing element of the sensor, reducing the vacuum gauge drift, and extending the service life of the sensor. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions in the embodiments or background art of the present invention, the following will briefly introduce the drawings required for the description of the embodiments or background art. Obviously, the drawings in the following description are only the embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained according to the provided drawings without creative efforts.

[0032] Figure 1Schematic diagram of the sensor connection structure provided in the first embodiment of the present invention;

[0033] Figure 2 Schematic diagram of charged particles adsorbed by the electrode assembly in the sensor connection structure provided in the first embodiment of the present invention;

[0034] Figure 3 Schematic diagram of the connector in the sensor connection structure provided in the first embodiment of the present invention;

[0035] Figure 4 Cross-sectional view of the connector in the sensor connection structure provided in the first embodiment of the present invention;

[0036] Figure 5 Schematic diagram of the control module in the sensor connection structure provided in the first embodiment of the present invention.

[0037] Description of reference numerals:

[0038] 100 - Process chamber wall;

[0039] 200 - Vacuum gauge body;

[0040] 300 - Connection body; 310 - Insulating pipeline; 320 - Metal pipeline; 330 - Connector; 331 - Connection hole; 340 - Sealing ring; 350 - gland; 360 - Male thread connector;

[0041] 400 - Electrode assembly; 410 - Electrode; 420 - Conductor.

[0042] 510 - First relay; 511 - First normally open contact; 520 - Second relay; 521 - First normally closed contact; 522 - Second normally open contact; 530 - Capacitance meter; 540 - Voltmeter; 550 - DO board; 560 - AI board. Detailed implementation manners

[0043] In the related art, the connection structure of the vacuum gauge mainly consists of two major parts: a reaction chamber and a vacuum gauge assembly. It mainly includes a vacuum gauge port shielding net, a vacuum gauge mesh sleeve, a sealing ring support frame, and a sealing ring arranged in the hole of the reaction chamber wall. This solution mainly filters the plasma through a stainless - steel shielding net to reduce the number of plasmas entering the pipeline and weaken the corrosion of the charged plasmas on the vacuum gauge film.

[0044] However, in this technology, the shielding net will affect gas flow. Especially when the chamber is controlled at low pressure, the vacuum gauge measurement data is inaccurate, resulting in unstable pressure in the chamber. In addition, in this solution, the state of the shielding net cannot be judged. If the shielding net is blocked, the blockage condition of the shielding net cannot be known in time, which may lead to unstable air pressure and affect the process effect.

[0045] To make the above objects, features, and advantages of the present invention more obvious and understandable, the following provides a detailed description of specific embodiments of the present invention with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely used to explain the present invention and are not used to limit the present invention.

[0046] Embodiment 1:

[0047] Figure 1 It is a schematic structural diagram of the sensor connection structure provided in Embodiment 1 of the present invention; Figure 2 It is a schematic diagram of the electrode assembly in the sensor connection structure provided in Embodiment 1 of the present invention adsorbing charged particles. As Figure 1 and Figure 2 shown, the sensor connection structure provided in Embodiment 1 of the present invention is used to connect the sensor to the process chamber and includes a connection body 300 and an electrode assembly 400; the connection body 300 has a channel that can connect the process chamber and the sensor; the electrode assembly 400 includes electrodes 410, and the electrodes 410 arranged in pairs in the channel are used to generate an electric field, and the direction of the electric field intensity of the electric field intersects the extension direction of the channel, and the electrodes 410 are insulated from the connection body 300.

[0048] Among them, in this embodiment, the process chamber applying this sensor connection structure has a process chamber wall 100, and the process chamber wall 100 has a chamber wall hole. The connection body 300 may include a tubular part, and the space inside the tubular part forms at least a part of the channel. The space of the chamber wall hole is connected to the channel, so the channel can connect the process chamber. The connection body 300 can be an intermediate part or component connecting the middle vacuum gauge body 200 and the process chamber to mechanically connect the vacuum gauge body 200 and the process chamber. Of course, in another implementation, the vacuum gauge body 200 and the process chamber may only have a pipeline connection, and the vacuum gauge body 200 is installed at other positions.

[0049] In addition, in this embodiment, the sensor can be a vacuum gauge, and the vacuum gauge has a vacuum gauge body 200. Those skilled in the art can understand that in addition to the vacuum gauge, other sensors connected to the process chamber, if they need to detect the process parameters in the process chamber, can also use the sensor connection structure of the present application to obtain similar technical effects.

[0050] Specifically, in this embodiment, the electrodes 410 can be a pair, and an electric field can be formed between the two electrodes 410. In another implementation, multiple pairs of electrodes 410 can also be arranged, and each pair of electrodes 410 is arranged along the extension direction of the channel. Or, at a certain length position of the channel, multiple pairs of electrodes 410 are arranged, and the directions of the electric field intensities generated by each pair of electrodes 410 can be parallel or intersecting.

[0051] Those skilled in the art should know that the vacuum gauge body 200 has a sensing element. In this embodiment, the sensing element may specifically be a vacuum gauge film, and the vacuum gauge film can sense the gas pressure in the process chamber transmitted from the channel.

[0052] By providing a channel connecting the process chamber and the vacuum gauge body 200, the sensing element of the vacuum gauge body 200 can sense the change in air pressure in the process chamber. When the air pressure in the process chamber changes, the gas pressure in the channel will also change accordingly. By pairwise arranging electrodes 410 in the channel, when the gas flows from the process chamber to the vacuum gauge body 200 along the channel, an electric field can be applied by the electrodes 410, and the direction of the electric field intensity intersects with the extending direction of the channel. Therefore, charged particles in the gas, especially plasma, will move towards the electrodes 410, thereby reducing or even significantly reducing or eliminating the charged particles moving to the sensing element of the vacuum gauge body 200, thus reducing the corrosion suffered by the sensing element of the vacuum gauge body 200, reducing vacuum gauge drift, and extending the service life of the vacuum gauge body 200.

[0053] Moreover, compared with the scheme of using a shielding net for filtering, the scheme of using electrodes 410 to generate an electric field to adsorb charged particles can, on the one hand, make it possible to more thoroughly absorb charged particles. After all, the shielding net has holes, and among the gas passing through the holes, charged particles far from the edge of the holes are likely not to adhere to the shielding net. Therefore, not all charged particles in the gas passing through the shielding net will adhere to the shielding net. On the other hand, it will not interfere with the flow of the gas flow. When the gas moves in the channel, there will be no obvious pressure drop due to the flow resistance of the shielding net, thereby improving the measurement accuracy of the vacuum gauge body 200. In addition, since the holes of the shielding net are small, when blocked, it will cause unstable pressure control. By using electrodes 410 to apply an electric field to adsorb charged particles, the possibility of unstable pressure control caused by the blocking of the shielding net can be eliminated.

[0054] As Figure 1 shown, optionally, the direction of the electric field intensity of the electric field is perpendicular to the extending direction of the channel.

[0055] In this embodiment, the direction of the electric field intensity of the electric field is arranged along the radial direction of the channel. That is, for the local part of the channel where the electrodes 410 are arranged, if it is circular or elliptical, the direction of the electric field intensity is the radial direction of the circular tube or elliptical tube or a direction parallel to the radial direction. If the cross-section of the local part of the channel where the electrodes 410 are arranged is rectangular or square, the direction of the electric field intensity can be along the side length direction of the rectangle or square, or along the diagonal direction. In short, regardless of the shape of the local part of the channel where the electrodes 410 are arranged, the direction of the electric field intensity is within the cross-section of the channel.

[0056] By setting the electric field strength perpendicular to the extension direction of the channel, a perpendicular force can be generated on the charged particles, thereby maximizing the utilization of the electric field strength to increase the velocity of the charged particles perpendicular to the channel extension direction within the shortest possible channel length, enabling them to reach the electrode 410 as soon as possible without being adsorbed by the vacuum gauge body 200, and improving the protection level of the vacuum gauge body 200.

[0057] In another implementation, the direction of the electric field strength generated by the pair of electrodes 410 may not be perpendicular to the extension direction of the channel. For example, it can form an angle of 10° or 29° or 60°. As long as the direction of the electric field strength intersects with the extension direction of the channel, it can produce the effect of causing the charged particles to move onto the electrode 410 under the action of the electric field. Only the larger the angle between the direction of the electric field strength and the extension direction of the channel, the better the removal effect on the charged particles under the same magnitude of the electric field strength.

[0058] As Figure 1 shown, optionally, the center of the cross-section of the channel is located between the two electrodes 410 of each pair of electrodes 410.

[0059] Specifically, in this embodiment, if the local part of the channel where the electrodes 410 are set has a circular cross-section, the pair of electrodes 410 can be located at both ends of the diameter of the channel cross-section. If the channel has a rectangular or square cross-section, the electrodes 410 can be located on two opposite side walls of the channel.

[0060] By having the center of the channel cross-section located between the two electrodes 410, the two electrodes 410 can remove particles from the gas in the central region of the channel cross-section. According to the laminar flow principle, the gas in the central region of the channel cross-section moves faster relative to the gas close to the inner wall of the channel. Therefore, removing particles from the gas in the central region can remove more charged particles, thereby reducing the corrosion of the vacuum gauge body 200.

[0061] In another implementation, the electrodes 410 may not be located at both ends of the diameter of the channel or on two opposite side walls. As long as they are located on both sides of the center of the channel cross-section, they can perform the particle removal work on the gas in the central region of the channel cross-section.

[0062] As Figure 1 shown, optionally, the electrode assembly 400 further includes a conductor 420 electrically connected to the electrode 410, and the conductor 420 is insulated from the connection body 300.

[0063] Specifically, in this embodiment, the conductor 420 can be a metal probe with a cross-sectional area of 1.5 mm 2 , and further, it can be a copper probe with a cross-sectional area of 1.5 mm 2The copper probe can withstand a current of 11 A, which can avoid the problem of overcurrent caused by excessive current but insufficient conductor voltage withstand during the process of the electrode 410 punching the difficult point.

[0064] Among them, in this embodiment, the conductor 420 can be arranged in the process chamber wall 100 of the process chamber. The surface of the process chamber wall 100 of the process chamber is provided with an insulating layer. Although components such as the male threaded connector 330 and the gland 350 fix the connection body 300 on the process chamber wall 100, the male threaded connector 330 does not contact the conductor 420. Therefore, the connection body 300 and the gland 350 are insulated from each other.

[0065] By arranging the conductor 420 to electrically connect the electrode 410, and insulating the conductor 420 from the connection body 300, the electric fields of the electrode 410 and the conductor 420 can be prevented from interfering with the electric field of the connection body 300.

[0066] Such as Figure 1 and Figure 2 shown, optionally, the electrode 410 is an electrode plate, and the conductor 420 is connected to the central region of the opposite surfaces of the pair of arranged electrode plates.

[0067] By arranging the conductor 420 in the central region of the opposite surfaces of the electrode plate, the conductor 420 can be kept at a similar distance from each region at the edge of the electrode plate, so that the electric field formed on the electrode plate is more uniform, which is beneficial to making charged particles move towards the electrode plate more efficiently, improving the removal efficiency of charged particles, and reducing the corrosion of the vacuum gauge body 200.

[0068] In another implementation, the electrode 410 may not be an electrode plate. For example, an electrode 410 wire is laid in the insulating pipeline 310. The length direction of the electrode 410 wire can be the same as the extension direction of the channel, and the electrode 410 wire can be arranged in a serpentine shape. An electric field can also be generated between the two electrodes 410.

[0069] Such as Figure 1 shown, optionally, the inner peripheral surface at one end of the cavity wall hole of the process chamber wall 100 of the process chamber where the channel is located has an insulating part, and the electrode 410 is fixed on the insulating part.

[0070] The electrode 410 is fixed on the insulating part of the inner peripheral surface of the channel, which can insulate the electrode 410 from the connection body 300 to avoid the interference between the electric field generated by the electrode 410 and the electric field of the connection body 300.

[0071] Such as Figure 1 shown, optionally, the connection body 300 includes an insulating pipeline 310, and the electrode 410 is fixed on the inner peripheral surface of the insulating pipeline 310.

[0072] By arranging the insulating pipeline 310 to fixedly install the electrode 410, the electrode 410 can be first fixedly connected to the insulating pipeline 310, and then the whole of the two can be assembled with the process chamber wall 100, thus avoiding the inconvenience in operation caused by directly fixedly installing the electrode 410 on the process chamber wall 100. Moreover, when too many particles accumulate on the electrode 410, the insulating pipeline 310 and the electrode 410 for fixedly installing the electrode 410 can be replaced together, improving the convenience of operation and extending the service life of the sensor connection structure.

[0073] As Figure 1 shown, optionally, the insulating pipeline 310 is configured to be fixedly sleeved in the chamber wall hole.

[0074] Among them, the insulating pipeline 310 being fixedly sleeved in the chamber wall hole does not mean that the insulating pipeline 310 and the chamber wall hole are non-detachable. It only indicates that the insulating pipeline 310 is located in the chamber wall hole and is fixed relative to the chamber wall hole when the sensor connection structure is in normal use.

[0075] By arranging the insulating pipeline 310 sleeved in the chamber wall hole, the electrode 410 can be first assembled with the insulating pipeline 310, and the assembled whole of the two can be installed in the chamber wall hole, improving the convenience of operation.

[0076] In another implementation, since the inner peripheral surface of the process chamber wall 100 of the process chamber is provided with an insulating layer, that is, the chamber wall hole of the process chamber wall 100 also constitutes a part of the above-mentioned channel, that is, the channel also has an insulating part. Therefore, the electrode 410 can be directly arranged on the chamber wall hole of the process chamber wall 100, and the effect of preventing the electric field generated by the electrode 410 from interfering with the electric field of the connection body 300 can also be produced.

[0077] As Figure 1 shown, optionally, the inner wall of the insulating pipeline 310 has at least a pair of parallel side walls, and the electrode 410 is located on the opposite surfaces of the parallel side walls in the insulating pipeline 310.

[0078] Among them, in this embodiment, the internal cross-section of the insulating pipeline 310 is square, and the electrode 410 is located on the opposite sides of the square. Therefore, the insulating pipeline 310 in this embodiment has two pairs of parallel side walls. The internal side length of the insulating pipeline 310 is 6.6 mm, and the external side length is 8.4 mm. In this embodiment, the electrode 410 can be an electrode plate, the electrode plate is a rectangular flat plate, the size of the rectangle is 6.6 mm * 10 mm, the thickness of the electrode plate is 1 mm, and the material can be selected as a copper plate. Then the distance between the opposite surfaces of the two electrode plates is 6.6 - 1 * 2 = 4.6 mm. [[ID=2,3]]

[0079] Among them, in this embodiment, there are two electrode plates, one located on the top wall inside the insulating pipeline 310 and the other located on the bottom wall inside the insulating pipeline 310. In other implementation manners, those skilled in the art can, according to the wiring requirements of the conductor 420, respectively arrange the two electrode plates on Figure 1 the rear wall inside the insulating pipeline 310 visible in the figure shown, and the front wall in the direction where the observer is located.

[0080] The electrode plates can be connected to the inner wall of the insulating pipeline 310 using high-temperature insulating glue. Specifically, openings are made at the positions of the insulating pipeline 310 corresponding to the electrode plates. The size and shape of the openings are the same as those of the electrode plates. The electrode plates are embedded in the openings and sealed with insulating glue.

[0081] By setting the inner wall of the insulating pipeline 310 to have at least a pair of parallel side walls, the electrodes 410 arranged on the side walls can adopt a flat plate structure, so that the opposite electrodes 410 are kept parallel, that is, the distances between the corresponding positions on the opposite surfaces are the same, which is conducive to forming a uniform electric field and avoiding the influence on the air flow due to the uneven accumulation degree of charged particles accumulated on the electrode plates caused by the uneven electric field.

[0082] Such as Figure 1 shown, optionally, the electrodes 410 are located inside the insulating pipeline 310, and along the extending direction of the channel, there are distances left between both ends of the electrodes 410 and the end parts of the insulating pipeline 310 respectively.

[0083] In this embodiment, along the extending direction of the channel, the electrodes 410 do not penetrate the entire insulating pipeline 310, and there are spaces left between the electrodes 410 and the two end parts of the insulating pipeline 310.

[0084] Adopting the above settings can ensure that the large electric field generated by the electrodes 410 does not interfere with the plasma movement in the process chamber, nor does it generate an electric field interference with the metal pipeline 320 of the remaining part connected to the body 300.

[0085] Such as Figure 1 shown, optionally, along the extending direction of the channel, the electrodes 410 are located in the middle of the insulating pipeline 310.

[0086] Specifically, in this embodiment, the electrode plates are in the insulating pipeline 310, and are 0.8 mm away from the left end of the insulating pipeline 310 shown, that is, 0.8 mm away from the process chamber, and are also 0.8 mm away from the right end of the insulating pipeline 310 shown, that is, away from the subsequent connecting part 330. Figure 1 shown Figure 1 shown

[0087] The electrode 410 is disposed in the middle of the insulating pipeline 310 in the channel extending direction, which can take into account preventing the large electric field between the electrodes 410 from changing the plasma movement in the process chamber and avoiding the electric field interference with the remaining metal pipeline 320 of the connection body 300.

[0088] As Figure 1 shown, optionally, the connection body 300 includes a metal pipeline 320, the metal pipeline 320 is located on the side far from the insulating pipeline 310, and the metal pipeline 320 communicates with the insulating pipeline 310 to form at least part of the channel.

[0089] Among them, in this embodiment, a flange portion may be provided at one end of the metal pipeline 320 facing the process chamber wall 100, the flange portion is pressed by a gland 350, and the gland 350 can be fixed to the process chamber wall 100 by a male threaded connector 330 passing through it and the flange portion.

[0090] By providing the metal pipeline 320 on the side of the connection body 300 far from the insulating pipeline 310, the connection stiffness can be ensured, and at the same time, the electric field formed due to the insulation of the pipeline directly connecting the vacuum gauge body 200 can be avoided, so as not to interfere with the measurement of the vacuum gauge body 200.

[0091] As Figure 1 shown, optionally, the insulating pipeline 310 is connected to the metal pipeline 320 through a connector 330, and the connector 330 is hermetically connected to the process chamber wall 100 and the metal pipeline 320.

[0092] Specifically, in this embodiment, a sealing ring 340 may be provided on the outer peripheral surface of the connector 330, and the connector 330 is pressed against the process chamber wall 100 by the flange portion of the metal pipeline 320. The sealing ring 340 located on the outer peripheral surface of the connector 330 contacts the outer peripheral surface of the connector 330, the outer surface of the process chamber wall 100, and the flange portion to seal the three.

[0093] By providing the connector 330 to connect the metal pipeline 320 and the insulating pipeline 310, the transition between the metal pipeline 320 and the insulating pipeline 310 can be realized, and the sealing of the connector 330 with the process chamber wall 100 and the metal pipeline 320 can be utilized to isolate the channel from the outside, so as to prevent the external pressure from interfering with the vacuum gauge body 200 to measure the air pressure.

[0094] Figure 3 It is a schematic structural diagram of the connector in the sensor connection structure provided by the first embodiment of the present invention; Figure 4 It is a cross-sectional view of the connector in the sensor connection structure provided by the first embodiment of the present invention; As Figure 1 、 Figure 3 and Figure 4As shown, optionally, the connecting member 330 has a connecting hole 331. One end of the connecting member 330 is connected to the outer peripheral surface of the insulating pipeline 310 through the inner peripheral surface of the connecting hole 331, and the other end is connected to the inner peripheral surface of the metal pipeline 320 through the outer peripheral surface of the connecting member 330.

[0095] By providing the connecting hole 331 in the connecting member 330 to connect with the outer peripheral surface of the insulating pipeline 310, and connecting with the inner peripheral surface of the metal pipeline 320 through the outer peripheral surface of the connecting member 330, on the one hand, the positioning of the insulating pipeline 310 in the process chamber wall 100 can be realized, and on the other hand, the fixing of the metal pipeline 320 relative to the process chamber can be realized.

[0096] As Figure 1 、 Figure 3 and Figure 4 As shown, optionally, the connecting hole 331 is a rectangular hole, and the insulating pipeline 310 with a rectangular profile is inserted into the connecting hole 331; the inner peripheral surface of one end of the metal pipeline 320 is circular, the outer peripheral surface of the other end of the connecting member 330 is a circumferential surface, and the other end of the connecting member is inserted into the metal pipeline 320 with a circular inner wall.

[0097] Wherein, in this embodiment, the outer peripheral surface diameter of the connecting member 330 is 14 mm, the connecting hole 331 is a rectangular hole, the side length of the rectangular hole is 8.4 mm, and the depth of the connecting hole 331 is 6 mm. A multi-stage stepped hole is provided at one end of the connecting member 330 facing the process chamber wall 100. The connecting hole 331 is the stage with the largest inner diameter of the stepped hole. The stepped hole may further include a circular hole with a diameter of 7 mm and a circular hole with a diameter of 6.4 mm arranged in sequence. The depth of the circular hole with a diameter of 7 mm is 3 mm. The thickness of the connecting member 330 in its axial direction, that is, the extending direction of the channel, is 15 mm.

[0098] By setting the connecting hole 331 of the connecting member 330 as a rectangular hole and matching it with the insulating pipeline 310, and moreover, setting the outer peripheral surface of the other end of the connecting member as a circumferential surface, the conversion between the square insulating pipeline 310 and the circular metal pipeline 320 can be realized. On the premise of ensuring the uniformity of the gas flow to the vacuum gauge body by using the circular inner cross-section of the metal pipeline 320, the insulating pipeline 310 with a square cross-section is realized to ensure that the insulating pipeline 310 can have parallel inner walls and improve the uniformity of the electric field distribution in the insulating pipeline 310.

[0099] Figure 5 It is a schematic diagram of the control module in the sensor connection structure provided by the first embodiment of the present invention, as Figure 5As shown, optionally, the sensor connection structure further includes a control module. The control module includes a first relay 510, a second relay 520, and a capacitance measuring instrument 530. The first relay 510 has a first normally open contact 511, and the second relay 520 has a first normally closed contact 521. The first normally closed contact 521 is connected in series with the capacitance measuring instrument 530 to form a first branch, and the first branch is electrically connected to the electrode 410. One end of the first normally open contact 511 is connected to the power supply, and the other end is connected to the second relay 520. The control module is configured to: in the power-off state, the first normally open contact 511 is disconnected, and the first normally closed contact 521 is conductive to supply the capacitance measuring instrument 530 to measure the capacitance between the electrodes 410.

[0100] Wherein, one end of the signal input part of the first relay 510 is connected to the DO (Digital Output) board, and the other end is grounded. One end of the signal input part of the second relay 520 is connected in series with the first normally open contact 511, and the other end is grounded. The capacitance measuring instrument 530 is electrically connected to the AI (Analog Input) board to feedback the measurement signal to the AI board 560.

[0101] As the by-products accumulate on the electrode plates, the distance between the electrode plates continuously decreases. According to the capacitance calculation formula C = ε*A / d, where A is the relative area of the two electrode plates, ε is the dielectric constant, and d is the distance between the two electrode plates. With A and ε unchanged, as d decreases, the capacitance value increases. C2 can be set as the limit value for replacing the electrode plates. When the measured capacitance C1 is greater than C2, the insulating pipeline 310 and the electrode plates can be replaced together.

[0102] Adopting the above solution can avoid excessive accumulation of charged particles on the electrode 4, which may affect the cross-sectional size of the channel and hinder the air flow. After long-term use, the flow resistance between the vacuum gauge body 200 and the process chamber will not increase significantly, thereby ensuring the accuracy of the measurement results of the vacuum gauge body 200 and facilitating accurate pressure control.

[0103] As Figure 5 As shown, optionally, the sensor connection structure further includes a voltmeter 540. The second relay 520 further includes a second normally open contact 522. The second normally open contact 522 is connected in series with the voltmeter 540 to form a second branch. The second branch is connected in parallel with the first branch and is electrically connected to the electrode 410. The control module is configured to: in the power-on state, the first normally open contact 511 is conductive, and the second normally open contact 522 is conductive to supply the voltmeter 540 to measure the voltage between the electrodes 410.

[0104] By setting the voltmeter 540 in series with the second normally open contact 522, when the first relay 510 is powered on, the first normally open contact 511 can be turned on, and the voltmeter 540 is used to monitor the voltage between the electrodes 410 to ensure the stability of the electric field intensity in the local area where the electrodes 410 are set in the channel.

[0105] The operating principle of this embodiment is as follows:

[0106] As Figure 5 shown, for the upper and lower electrode plates in the insulating pipeline 310, the upper electrode plate is electrically connected to the high voltage V0, and the lower electrode plate is grounded. When V0 is a positive voltage, the electric field generated by the upper and lower electrodes 410 is vertically downward. Under the action of the electric field, positive ions move downward, and negative ions move upward against the direction of the electric field intensity. When the charged particles contact the electrode plate, the charge is conducted away by the electrode 410, and the charged plasma becomes electrically neutral molecules and adheres to the electrode plate. In this embodiment, the voltage of V0 is 100V DC, so an electric field intensity of approximately 200V / cm will be generated between the electrode plates, which is sufficient to cause the charged particles to move to the electrode plate under the action of the electric field force.

[0107] When the DO board 550 is at a high potential, the first relay 510 is powered on, the first normally open contact 511 of the first relay 510 is turned on, the second relay 520 is powered on, the second normally open contact 522 of the second relay 520 is powered on and turned on, and the first normally closed contact 521 is disconnected. At this time, it is in the charged particle removal mode, that is, when the radio frequency power supply starts to glow, the motor is pressurized so that the charged particles move towards the electrode plate to neutralize the charged particles. In this mode, the voltmeter 540 works to detect the voltage between the two electrodes 410 to ensure the electric field intensity. And since the first normally closed contact 521 is disconnected, the capacitance measuring instrument 530 does not work.

[0108] When the DO board 550 is at a low potential, neither the first relay 510 nor the second relay 520 is powered on. At this time, the first normally closed contact 521 is turned on and the first normally open contact 511 is disconnected, and the capacitance measuring instrument 530 is connected to the circuit to start capacitance measurement. At this time, the capacitance between the two electrodes 410 can be considered as capacitance C1. The capacitance measuring instrument 530 converts the measured capacitance into an analog quantity and transmits it to the AI board 560 of the lower computer to complete the acquisition of the capacitance. When the capacitance C1 is greater than the limit value C2 for replacing the electrode 410, the insulating pipeline 310 and the electrode 410 can be replaced together.

[0109] Embodiment 2:

[0110] As Figure 1 shown, Embodiment 2 also provides a semiconductor processing device, including a process chamber, a vacuum gauge body 200, and a sensor connection structure according to any one of the claims, and the sensor connection structure connects the vacuum gauge body 200 and the process chamber.

[0111] By providing the above-mentioned sensor connection structure in a semiconductor processing apparatus, correspondingly, the semiconductor processing apparatus has all the advantages of the above-mentioned sensor connection structure, which will not be elaborated herein one by one.

[0112] As Figure 1 shown, optionally, the process chamber has a connection portion, the surface of the connection portion is provided with an insulating layer and has a cavity wall hole, and the cavity wall hole is connected to one end of the sensor connection structure, and the other end of the sensor connection structure is connected to a vacuum gauge.

[0113] In this embodiment, the process chamber wall 100 is the connection portion. The surface of the connection portion is provided with an insulating layer, which means that the surface of the process chamber wall 100 facing the inside of the process chamber, the inner peripheral surface of the cavity wall hole, and the surface of the process chamber wall 100 facing the connector 330 are all provided with insulating layers. And the surface of the metal probe as the conductor 420 is also provided with an insulating material to be insulated from the process chamber wall 100.

[0114] The surface of the connection portion being provided with an insulating layer can prevent the electrode 410 from being electrically connected to the metal pipeline 320 of the connection body 300, resulting in the electric field of the metal pipeline 320 being affected.

[0115] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be subject to the scope defined by the claims.

[0116] Finally, it should also be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising" or any other variant thereof is intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus comprising a series of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the statement "comprising a..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus comprising the element.

[0117] In the above embodiments, descriptions of orientations such as "upper" and "lower" are all based on the drawings shown.

[0118] The foregoing description of the disclosed embodiments enables those skilled in the art to practice or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention.

[0119] Accordingly, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A sensor connection structure for connecting a sensor to a process chamber, characterized in that, Comprising: A connecting body (300), the connecting body (300) having a channel that can communicate the process chamber and the sensor; And, An electrode assembly (400), including electrodes (410), the electrodes (410) arranged in pairs in the channel being configured to generate an electric field, the direction of the electric field intensity of the electric field intersecting the extending direction of the channel, and the electrodes (410) being insulated from the connecting body (300).

2. The sensor connection structure according to claim 1, characterized in that, The direction of the electric field intensity of the electric field is perpendicular to the extending direction of the channel.

3. The sensor connection structure according to claim 2, wherein, The center of the cross-section of the channel is located between the two electrodes (410) of each pair of the electrodes (410).

4. The sensor connection structure according to claim 1, wherein, The electrode assembly (400) further includes: a conductor (420) electrically connected to the electrodes (410), the conductor (420) being insulated from the connecting body (300).

5. The sensor connection structure according to claim 4, characterized in that The electrodes (410) are electrode plates, and the conductor (420) is connected to the central regions of the opposite surfaces of the electrode plates arranged in pairs.

6. The sensor connection structure according to claim 1, characterized in that The inner peripheral surface of one end of the cavity wall hole of the process chamber wall (100) where the channel is located has an insulating portion, and the electrodes (410) are fixed to the insulating portion.

7. The sensor connection structure according to claim 1, wherein The connecting body (300) includes an insulating pipeline (310), and the electrodes (410) are fixed to the inner peripheral surface of the insulating pipeline (310).

8. The sensor connection structure according to claim 7, wherein, The insulating pipeline (310) is configured to be fixedly sleeved in the cavity wall hole.

9. The sensor connection structure according to claim 7, wherein The inner wall of the insulating pipeline (310) has at least a pair of parallel side walls, and the electrodes (410) are located on the opposite surfaces of the parallel side walls in the insulating pipeline (310).

10. The sensor connection structure according to claim 7, characterized in that, The electrodes (410) are located inside the insulating pipeline (310), and along the extending direction of the channel, there are distances left between the two ends of the electrodes (410) and the end portions of the insulating pipeline (310) respectively.

11. The sensor connection structure according to claim 7, characterized in that, In the extending direction of the channel, the electrodes (410) are located in the middle of the insulating pipeline (310).

12. The sensor connection structure according to claim 7, characterized in that, The connecting body (300) includes a metal pipeline (320), the metal pipeline (320) being located on the side away from the insulating pipeline (310), and the metal pipeline (320) and the insulating pipeline (310) communicate to form at least part of the channel.

13. The sensor connection structure according to claim 12, characterized in that, The insulating pipeline (310) is connected to the metal pipeline (320) through a connector (330), and the connector (330) is hermetically connected to the process chamber wall (100) and the insulating pipeline (310).

14. The sensor connection structure according to claim 13, characterized in that, The connector (330) has a connection hole (331), one end of the connector (330) is connected to the outer peripheral surface of the insulating pipeline (310) through the inner peripheral surface of the connection hole (331), and the other end is connected to the inner peripheral surface of the metal pipeline (320) through the outer peripheral surface of the connector (330).

15. The sensor connection structure according to claim 13, wherein The connection hole (331) is a rectangular hole, and the insulating pipeline (310) with a rectangular profile is inserted into the connection hole (331); the inner peripheral surface of one end of the metal pipeline (320) is circular, and the outer peripheral surface of the other end of the connector (330) is a circumferential surface, and the other end of the connector (330) is inserted into the metal pipeline (320) with a circular inner wall.

16. The sensor connection structure according to claim 4, characterized in that, The electrode (410) is an electrode plate; and / or, the conductor (420) is a metal probe.

17. The sensor connection structure according to any one of claims 1-16, characterized in that, The sensor connection structure further includes a control module, and the control module includes a first relay (510), a second relay (520), and a capacitance measuring instrument (530). The first relay (510) has a first normally open contact (511), and the second relay (520) has a first normally closed contact (521); the first normally closed contact (521) is connected in series with the capacitance measuring instrument (530) to form a first branch, and the first branch is electrically connected to the electrode (410); one end of the first normally open contact (511) is connected to a power supply, and the other end is connected to the second relay (520); the control module is configured to: in a power-off state, the first normally open contact (511) is disconnected, and the first normally closed contact (521) is turned on to supply the capacitance measuring instrument (530) to measure the capacitance between the electrodes (410).

18. The sensor connection structure according to claim 17, characterized in that, The sensor connection structure further includes a voltmeter (540). The second relay (520) further includes a second normally open contact (522). The second normally open contact (522) is connected in series with the voltmeter (540) to form a second branch. The second branch is connected in parallel with the first branch, and the second branch is electrically connected to the electrode (410); the control module is configured to: in a power-on state, the first normally open contact (511) is turned on, and the second normally open contact (522) is turned on to supply the voltmeter (540) to measure the voltage between the electrodes (410).

19. A semiconductor processing apparatus, characterized in that, The semiconductor processing equipment includes a process chamber, a sensor (200), and a sensor connection structure according to any one of claims 1-18, and the sensor connection structure connects the sensor (200) and the process chamber.

20. The semiconductor processing equipment according to claim 19, wherein, The process chamber has a connection portion, the surface of the connection portion is provided with an insulating layer and has a cavity wall hole, the cavity wall hole is connected to one end of the sensor connection structure, and the other end of the sensor connection structure is connected to the sensor (200).

21. The semiconductor processing equipment according to claim 19 or 20, characterized in that, The sensor (200) includes a vacuum gauge.

Images