Mask pattern optimization method and device, electronic equipment and storage medium

Abstract

The invention discloses a mask pattern optimization method and device, electronic equipment and a storage medium, and the method comprises the steps: carrying out the rule inspection and optimization of an initial mask pattern based on an initial mask inspection rule. And performing rule inspection on the derivative mask pattern generated after the initial optimization, and when the derivative mask pattern is determined not to conform to the inspection rule, re-optimizing the initial mask pattern before optimization. And then rule matching can be carried out again, and the optimized mask pattern which does not meet the check rule is optimized again. According to the technical scheme, the influence of the derivative graph on the mask graph is fully considered, and the processing efficiency and practicability of the mask graph optimization process are effectively improved. And meanwhile, the mask inspection rule selected during each mask optimization can accurately correspond to the mask pattern, so that the detection precision and efficiency in the mask manufacturing rule inspection process are effectively improved, and a powerful guarantee is provided for the production quality and the chip yield in the subsequent chip production process.

Description

Technical Field

[0001] This application belongs to the technical field of semiconductor manufacturing, and particularly relates to a mask pattern optimization method, device, electronic device, and storage medium. Background Art

[0002] Mask Rule Check (MRC) is one of the extremely critical and essential steps in the chip manufacturing and production process. Through accurate mask rule checking, graphics that do not conform to the rules in the chip mask can be effectively detected, and then targeted adjustments and optimizations can be made to ensure the quality and yield of the produced chips.

[0003] Currently, during the mask rule checking process, after determining the checking rules for each mask pattern on the unadjusted initial chip mask, the checking rules corresponding to each mask pattern are not actively adjusted anymore. The mask pattern after one mask rule check and optimization does not necessarily exactly correspond to the mask rules during the initial detection, which will then lead to using actually unmatched mask rules to detect the optimized mask pattern, resulting in detection errors in the mask rule checking process. Mask patterns that may conform to the rules are detected as not conforming to the rules, while mask patterns that do not conform to the actual corresponding rules are determined to conform to the rules, seriously affecting the production efficiency of the chips and the quality and practicality of the manufactured chips. Summary of the Invention

[0004] Embodiments of this application provide a mask pattern optimization method, device, electronic device, and storage medium, which can efficiently and accurately perform mask rule checking and pattern optimization on the chip mask.

[0005] In a first aspect, embodiments of this application provide a mask pattern optimization method, including:

[0006] Based on the initial mask checking rules, perform rule checking on the initial mask patterns in the mask layout, and perform initial optimization according to the initial inspection results to obtain an initially optimized mask layout. The initial mask checking rules are determined based on the matching conditions of multiple mask checking rules and the initial mask patterns;

[0007] In the case where it is determined that there are newly generated derivative mask patterns in the initially optimized mask layout, based on the updated mask checking rules, perform rule checking on the derivative mask patterns. The updated mask checking rules are determined based on the matching conditions of multiple mask checking rules and the derivative mask patterns;

[0008] In the case where it is determined that the derivative mask patterns do not conform to the updated mask checking rules, perform re-initial optimization on the initial mask patterns to obtain a new initially optimized mask layout.

[0009] In a second aspect, an embodiment of the present application provides a mask pattern optimization device, including:

[0010] An initial optimization unit, configured to perform a rule check on an initial mask pattern in a mask layout based on an initial mask check rule, and perform initial optimization according to the initial check result to obtain an initially optimized mask layout, where the initial mask check rule is determined based on the matching conditions of multiple mask check rules and the initial mask pattern;

[0011] A derivative pattern check unit, configured to, when it is determined that there are newly generated derivative mask patterns in the initially optimized mask layout, perform a rule check on the derivative mask patterns based on an updated mask check rule, where the updated mask check rule is determined based on the matching conditions of multiple mask check rules and the derivative mask patterns;

[0012] A re-optimization unit, configured to, when it is determined that the derivative mask patterns do not conform to the updated mask check rule, perform re-initial optimization on the initial mask pattern to obtain a new initially optimized mask layout.

[0013] In a third aspect, an embodiment of the present application provides a computer-readable storage medium, on which computer program instructions are stored. When the computer program instructions are executed by a processor, the mask pattern optimization method in the first aspect is implemented.

[0014] In a fourth aspect, an embodiment of the present application provides a computer program product. When the instructions in the computer program product are executed by a processor of an electronic device, the electronic device is caused to execute the mask pattern optimization method in the first aspect.

[0015] In a fifth aspect, an embodiment of the present application provides an electronic device. The electronic device includes a processor and a memory storing computer program instructions, and the processor is coupled to the memory; when the processor executes the computer program instructions, the mask pattern optimization method as in the first aspect is implemented.

[0016] The technical solution provided by the embodiment of the present application at least brings the following beneficial effects:

[0017] A mask pattern optimization method provided by an embodiment of the present application includes: a rule check can be performed on an initial mask pattern in a mask layout based on a determined initial mask check rule, and initial pattern optimization is performed based on the initial check result. The technical solution provided by the embodiment of the present application can perform a rule check on derivative mask patterns generated after initial optimization, and when it is determined that the derivative mask patterns do not conform to the corresponding updated mask check rule, re-optimize the initial mask pattern before optimization. The influence of derivative patterns on the mask layout pattern adjustment process is fully considered, effectively improving the processing efficiency and practicability of the mask layout optimization process.

[0018] The technical solution provided by the embodiment of the present application can perform rule matching on the mask pattern based on the mask inspection rules, and optimize the mask pattern that does not meet the inspection rules. Based on this technical solution, the mask inspection rules selected before each optimization can be accurately corresponding to the mask pattern, effectively improving the detection accuracy and detection efficiency of the mask manufacturing rule inspection process, and further significantly improving the processing efficiency of the mask optimization process and the practicality of the optimization result. Brief Description of the Drawings

[0019] In order to more clearly illustrate the technical solution of the embodiment of the present application, the drawings required to be used in the embodiment of the present application will be briefly introduced below. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings without creative efforts.

[0020] Figure 1 It is a schematic flow chart of a mask pattern optimization provided by an embodiment of the present application;

[0021] Figure 2 It is an exemplary schematic diagram of a graphic mask information and a paired graphic mask information provided by an embodiment of the present application;

[0022] Figure 3 It is a schematic flow chart of a rule check for a derived mask pattern provided by an embodiment of the present application;

[0023] Figure 4 It is a schematic structural diagram of a mask pattern optimization device provided by another embodiment of the present application;

[0024] Figure 5 It is a schematic structural diagram of an electronic device provided by still another embodiment of the present application. Detailed Description of the Embodiments

[0025] The features and exemplary embodiments of various aspects of the present application will be described in detail below. In order to make the purpose, technical solution and advantages of the present application more clear and understandable, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain the present application, rather than to limit the present application. For those skilled in the art, the present application can be implemented without some of these specific details. The following description of the embodiments is only intended to provide a better understanding of the present application by showing examples of the present application.

[0026] It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprising", "including" or any other variant thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements not only includes those elements, but also includes other elements not expressly listed, or elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "comprising..." does not exclude the presence of additional identical elements in the process, method, article or device comprising the said element.

[0027] Currently, Mask Rule Check (MRC) is a very important part in the chip design and production process. Accurate rule checking can effectively improve the chip production efficiency and production yield.

[0028] However, when currently performing rule checking on a chip mask according to the mask inspection rules, once the inspection rules are set for the initial chip mask, these rules are usually not actively adjusted anymore. However, the optimized mask pattern may no longer fully match the original inspection rules. If the inspection is still based on the initially determined inspection rules, there is a high probability of inspection errors. The mask manufacturing rule checking process where the inspection rules cannot accurately match will seriously affect the optimization and determination of the chip mask, and further affect the overall execution efficiency of the chip production process. In severe cases, it will also have a negative impact on the quality and yield of the produced chips.

[0029] Based on the technical problems mentioned in the above content, embodiments of the present application provide a mask pattern optimization method, device, electronic device and storage medium, which can perform rule checking on the initial mask pattern in the mask layout based on the determined initial mask inspection rules, and perform initial optimization based on the initial inspection results.

[0030] Among them, the technical solution provided by the embodiments of the present application can perform rule checking on the derivative mask patterns newly generated due to the initial optimization in the mask layout after the initial optimization. When it is determined that the derivative mask pattern does not conform to the corresponding updated mask inspection rules, the initial mask pattern before optimization is readjusted and optimized. The technical solution provided by the embodiments of the present application can fully consider the influence of the derivative patterns on the mask layout during the optimization process, and effectively improve the processing efficiency and practicality of the mask pattern optimization process.

[0031] Through the above technical solutions, the mask inspection rules selected before each optimization can accurately correspond to the mask patterns, effectively improving the detection accuracy and detection efficiency of the mask manufacturing rule inspection process. Furthermore, the processing efficiency of the mask optimization process and the practicality of the optimization results are significantly improved.

[0032] Among them, regarding the execution entity adopted in the embodiments of the present application, specifically, it can be a terminal device, such as a desktop computer, a laptop computer, etc., or a remote control device, such as a server, etc. In addition, the execution entity adopted in the embodiments of the present application can also be an execution entity in the form of software, such as a client installed in a terminal device, a software program, etc. Here, the execution entity applying the technical solutions provided by the embodiments of the present application is not strictly limited, and can be flexibly selected and set according to the application scenario and actual needs.

[0033] Regarding the mask pattern optimization method, device, electronic device, and storage medium provided by the embodiments of the present application, the corresponding specific application scenarios are not strictly limited in this application and can be determined according to actual needs. For the convenience of understanding, the following gives an example of the specific application scenario corresponding to the technical solutions provided by the embodiments of the present application.

[0034] For example, in the scenario of mask manufacturing rule inspection for the edge distance between different mask patterns on a chip mask, the technical solutions provided by the embodiments of the present application can match the initial mask inspection rule corresponding to the initial mask pattern as the optimization target in the mask layout based on a plurality of preset mask inspection rules corresponding to different mask patterns. Then, rule inspection is performed on the initial mask pattern according to the initial mask inspection rule, and graphic optimization is performed according to the initial inspection result, that is, the initial mask pattern is adjusted to optimize the graphic edge distance between the initial mask pattern and the paired mask pattern.

[0035] Then, after the initial optimization, rule matching and rule inspection can be performed on the derivative mask patterns newly generated due to the initial optimization. When it is determined that the derivative mask patterns do not meet the corresponding updated mask inspection rules, the initial mask pattern before optimization is re-optimized. This effectively avoids the appearance of new graphics that do not conform to the mask inspection rules due to graphic adjustment, and improves the mask optimization rate as well as the practicality and reliability of the optimized mask.

[0036] In this embodiment, through the technical solutions provided by the present application, the processing efficiency and detection accuracy of mask manufacturing rule inspection can be effectively improved, ensuring that the optimization results of the chip mask are effective and practical. At the same time, it also speeds up the production efficiency of the subsequent chip production process and improves the quality and yield of the produced chips.

[0037] It should be noted that the application scenarios described in the embodiments of the present application above are for more clearly explaining the technical solutions of the embodiments of the present application, and do not constitute a limitation on the technical solutions provided by the embodiments of the present application. Those of ordinary skill in the art can know that with the emergence of new application scenarios, the technical solutions provided by the embodiments of the present application are equally applicable to similar technical problems.

[0038] Figure 1 It is a schematic flow chart of a mask pattern optimization method provided by an embodiment of the present application.

[0039] As Figure 1 shown, the mask pattern optimization method provided by the embodiment of the present application includes steps S101 to S104.

[0040] S101: Based on the initial mask inspection rules, perform rule inspection on the initial mask pattern in the mask layout, and perform initial optimization according to the initial inspection result to obtain the initially optimized mask layout.

[0041] In step S101, the technical solution provided by the embodiment of the present application can perform mask manufacturing rule inspection on the initial mask pattern in the mask layout to be optimized based on the determined initial mask inspection rules, and perform initial optimization on the initial mask pattern according to the initial inspection result to obtain the initially optimized mask layout.

[0042] Among them, the mask layout to be optimized can specifically be the mask layout corresponding to the initial chip mask determined according to the designed circuit of the chip during the chip design process.

[0043] Or, it can also be the mask layout after at least one graphic adjustment, that is, the mask that has undergone mask manufacturing rule inspection and graphic optimization can also be used as the mask layout targeted by the technical solution of the embodiment of the present application. The type of mask layout targeted by the mask pattern optimization method and the specific usage period are not limited in the present application, and can be flexibly set according to the application scenario and actual requirements.

[0044] The initial mask inspection rules can specifically be determined based on the matching situation after performing rule matching between a plurality of preset mask inspection rules for different mask patterns and the initial mask pattern. The initial inspection result can be used to indicate whether the initial mask pattern conforms to the corresponding initial mask inspection rules. If not, initial optimization is performed on the initial mask pattern.

[0045] Specifically, in an embodiment provided by the present application, according to the obtained mask layout, the mask pattern information corresponding to the initial mask pattern in the mask layout can be determined. At the same time, the rule matching information and rule index values corresponding to a plurality of preset mask inspection rules can also be determined.

[0046] Among them, the mask pattern information is specifically used to represent the graphic data and identification related to the initial mask pattern in the mask layout, and may specifically include, but not be limited to, the mask layer (Layer) where the initial mask pattern is located, the corresponding mask type information (Mask), etc.

[0047] The content included in the rule matching information can correspond to the data content included in the above mask pattern information, so as to realize the accurate matching and determination of the initial mask inspection rule and the subsequent updated mask inspection rule. Specifically, it may include, but not be limited to, the mask layer identifier, the graphic mask identifier, etc.

[0048] Furthermore, according to the determined rule matching information and rule index values corresponding to a plurality of preset mask inspection rules, a two-dimensional mask rule list can be determined. The determined two-dimensional mask rule list can be used as a set of rule matching information corresponding to a plurality of mask inspection rules.

[0049] The two-dimensional mask rule list is obtained by arranging the corresponding rule matching information in sequence according to the rule index value corresponding to each mask inspection rule. By organizing and uniformly recording a plurality of mask inspection rules in the form of a rule list, the matching efficiency and matching accuracy of the initial mask inspection rule and the subsequent updated mask inspection rule can be effectively improved, and further the optimization efficiency and optimization effect of the overall mask pattern optimization process can be enhanced.

[0050] Then, according to the determined mask pattern information and the set of rule matching information, the initial mask inspection rule corresponding to the initial mask pattern can be determined from the plurality of mask inspection rules corresponding to the set of rule matching information.

[0051] Regarding the determination process of the rule matching information corresponding to each of the above mask inspection rules, in an embodiment provided in the present application, the mask layer information (Layer), graphic mask information (Mark), paired graphic mask information (Pair Mark), projection length interval (Projection Length), and graphic length interval (Length) and other related information corresponding to each mask inspection rule can be determined.

[0052] The mask layer information can be used to represent the physical layer where the mask pattern targeted by the mask inspection rule is located on the mask, such as a metal layer, a contact hole layer, a polysilicon layer, etc.

[0053] The graphic mask information can be used to represent the mask identification of the mask patterns to be regularly inspected in the mask layout, such as pre-alignment marks, transmission image sensor marks, barcode / reticle ID, etc. The paired graphic mask information can be used to represent the mask identification of the paired mask patterns corresponding to the initial mask patterns.

[0054] According to the different types and distributions of mask patterns, the mask inspection rules can not only perform regular inspections on individual mask patterns, but also perform regular inspections on the positional and spatial relationships between multiple paired mask patterns. The initial mask pattern and the paired mask pattern can be, for example, phase-shifting mask pairs (Phase-Shifting Mask, PSM), optical proximity correction pairs (Optical Proximity Correction, OPC), etc.

[0055] The projection length interval can be used to represent the range of the pattern size projected onto the wafer after the mask pattern is irradiated by the light source of the lithography system during the lithography process. The graphic length interval can be used to represent the size range of the mask pattern on the chip mask.

[0056] It should be noted that before implementing the technical solution of the embodiment of the present application for the mask layout, mask processing can be performed on some or all of the mask patterns in the mask layout, so as to achieve local optimization of some mask patterns or overall optimization of all mask patterns. The specific forms of the graphic mask information and the paired graphic mask information can refer to the examples shown in Figure 2 the example shown.

[0057] Figure 2 FIG. 15 is a schematic diagram of an example of graphic mask information and paired graphic mask information provided by an embodiment of the present application.

[0058] Among them, Figure 2 the pre-mask image above in FIG. 15 is a schematic diagram of some initial mask patterns and corresponding some paired mask patterns in the mask layout that have not been subjected to mask processing, Figure 2 the post-mask image below in FIG. 15 is the upper part of some initial mask patterns and some paired mask patterns after mask processing based on the corresponding graphic mask information and paired mask information. For the initial mask pattern in the example of Figure 2 FIG. 15, mask = A can be used as the corresponding graphic mask information, and mask = B can be used as the corresponding paired mask information.

[0059] Based on at least one of the above-mentioned multiple pieces of information, corresponding key-value pairs can be constructed, and the constructed key-value pairs are used as the rule matching information corresponding to each mask inspection rule.

[0060] For example, taking the above mask layer information, graphic mask information, paired graphic mask information, projection length interval, and graphic length interval as examples, "mask layer", "graphic mask", "paired graphic mask", "projection length interval", and "graphic length interval" can be used as the keys (key) of the rule matching information in the form of key-value pairs. The specific expression form of the key can be similar to "layer+mark+pair mark+projection length+length".

[0061] The mask layer information, graphic mask information, paired graphic mask information, projection length interval, and graphic length interval corresponding to each mask inspection rule can be used as the values (value) corresponding to the keys in the above form. Among them, the projection length interval and the graphic length interval are specifically two numerical values, representing the upper and lower limits of the interval respectively.

[0062] Based on the keys and values in the form shown in the above embodiments, key-value pairs corresponding to each mask inspection rule can be constructed to serve as the rule matching information corresponding to each mask inspection rule in the rule matching information set in the form of a two-dimensional mask rule list. Among them, in this embodiment, the specific expression form of each rule matching information set in the two-dimensional mask rule list can be, for example, "layer+mark+pair mark+projection length+length+rule startindex", and "rule start index" can be used to represent the rule index value corresponding to the mask inspection rule.

[0063] By determining the key-value pairs to statistically organize the rule matching information corresponding to multiple mask inspection rules, it effectively improves the visualization degree of the rule matching information of multiple mask inspection rules, and effectively speeds up the matching rate and accuracy of the initial mask inspection rules and the updated mask inspection rules in the subsequent process. It provides a strong rule inspection basis for the optimization process of mask graphics, improves the practicability of the optimized mask graphics, and also provides a strong guarantee for the production quality and chip yield of subsequent chips.

[0064] Regarding the specific determination process of the initial mask inspection rules corresponding to the above initial mask layout, based on the above embodiments where the key-value pairs corresponding to the relevant information of the mask inspection rules are used as the rule matching information, according to each piece of information contained in the mask graphic information corresponding to the initial mask layout, the corresponding initial mask inspection rules can be matched from the key-value pair list (i.e., the above two-dimensional mask rule list).

[0065] Taking the example form of key-value pairs in the above embodiments, in an embodiment provided by the present application, when the rule matching information set contains key-value pairs composed of mask layer information, graphic mask information, paired graphic mask information, projection length interval, and graphic length interval corresponding to each mask inspection rule, the mask graphic information corresponding to the initial mask layout may specifically include the corresponding mask layer identifier, graphic mask identifier, paired graphic mask identifier, projection length, and graphic length.

[0066] For each mask inspection rule in the rule matching information set, it is possible to determine whether this information respectively matches the mask layer information, graphic mask information, and paired graphic mask information in the rule matching information corresponding to the mask inspection rule according to the mask layer identifier, graphic mask identifier, and paired graphic mask identifier in the mask graphic information corresponding to the initial mask layout. At the same time, it is also possible to determine whether the projection length and graphic length in the mask graphic information accurately fall within the projection length interval and graphic length interval corresponding to the mask inspection rule.

[0067] Briefly speaking, when it is determined that the mask graphic information corresponding to the initial mask layout completely matches the rule matching information corresponding to the mask inspection rule, it can be determined that the mask inspection rule is the initial mask inspection rule corresponding to the initial mask layout. According to the matched initial mask inspection rule, subsequent rule inspections for the initial mask layout and graphic optimization based on the inspection results can be carried out.

[0068] Based on the above matching process for determining the initial mask inspection rule according to the mask graphic information and the rule matching information set, the initial mask inspection rule that exactly matches the initial mask graphic is accurately matched. Through the above process, the accuracy and practicality of rule inspection and graphic optimization for the initial mask graphic are effectively guaranteed, ensuring that corresponding mask inspection rules can be accurately matched for any type of mask graphic.

[0069] The above content is the specific determination process of the initial mask inspection rule in the embodiment of the present application. Constructing a mask inspection rule set for accurately matching the initial mask inspection rule corresponding to the initial mask graphic effectively improves the determination process of the mask inspection rule, enhances the processing efficiency of subsequent mask inspection and graphic optimization processes, and ensures the inspection accuracy, providing a strong guarantee for the practicality and reliability of the optimized mask layout.

[0070] Regarding the specific process of performing rule checking and initial optimization on the initial mask pattern based on the determined initial mask inspection rules, in an embodiment provided by the present application, the standard spatial relationship information corresponding to the initial mask inspection rules can be determined. Then, based on the actual spatial relationship information and the standard spatial relationship information corresponding to the initial mask pattern in the unoptimized mask layout, rule checking can be performed on the initial mask pattern.

[0071] When it is determined that the actual spatial relationship information corresponding to the initial mask pattern does not satisfy the standard spatial relationship information, it is determined that the initial inspection result indicates that the initial mask pattern does not conform to the corresponding initial mask inspection rules, that is, it indicates that the initial mask pattern in this case needs to be optimized graphically, and at the same time, the corresponding optimizable range can be determined. Furthermore, based on the determined optimizable range, initial optimization can be performed on the initial mask pattern.

[0072] Among them, the standard spatial relationship information and the actual spatial relationship can be specifically used to represent the preset standard spatial relationship and the actual spatial relationship in the mask layout between the initial mask pattern and the corresponding paired mask pattern.

[0073] It should be noted that in the embodiments of the present application, the specific content and type of the above spatial relationship information are not limited. For example, it can be the shortest interval distance between the edge contours of the initial mask pattern and the edge contours of the paired mask pattern, or it can be the straight-line distance between the graphic center points of the initial mask pattern and the paired mask pattern, etc., which can be flexibly set according to the actual application scenario and the graphic type corresponding to the mask pattern.

[0074] To facilitate understanding of the above specific processing process for initial optimization of the initial mask pattern, the following takes part of the edge contour as the part to be optimized in the initial mask pattern as an example for further explanation and illustration.

[0075] In an embodiment provided by the present application, the actual spatial relationship information corresponding to the initial mask pattern can specifically be the shortest straight-line distance between the edge to be optimized, which is part of the edge contour in the initial mask pattern, and the corresponding paired reference edge in the paired mask pattern, while the standard spatial relationship information can be the preset numerical range corresponding to the shortest straight-line distance between the edge to be optimized and the paired reference edge.

[0076] When the shortest straight-line distance between at least part of the edge contours of the initial mask pattern and at least part of the edge contours of the paired mask pattern does not satisfy the standard spatial relationship information, the corresponding at least part of the edge contours can be used as the edge to be optimized. Then, based on the standard spatial relationship information corresponding to the edge to be optimized, that is, the preset numerical range corresponding to the shortest straight-line distance from the paired reference edge, the movable distance corresponding to the edge to be optimized can be determined as the optimizable range.

[0077] For example, assume that the shortest straight-line distance between the edge to be optimized in the initial mask pattern and the corresponding paired reference edge in the paired mask pattern in the unoptimized mask layout is 3 nm, while the specific standard spatial relationship information corresponding to the initial mask pattern indicates that the shortest straight-line distance between the edge to be optimized and the paired reference edge should be between 5 nm and 10 nm.

[0078] In this case, it can be determined that the edge to be optimized in the initial mask pattern does not conform to the initial mask inspection rule, that is, graphic optimization is required. The determined corresponding movable distance, that is, the range that can be optimized, can specifically be 2 nm to 7 nm. According to the determined movable distance, the edge to be optimized in the initial mask pattern can be finely adjusted graphically to achieve initial optimization.

[0079] In addition, in addition to the shortest straight-line distance corresponding to the shortest straight-line distance in the above example, the standard spatial relationship information can also be specific values set according to actual application scenarios and requirements. The specific data form corresponding to the standard spatial relationship information is not strictly limited in the embodiments of the present application. The specific values mentioned in the above embodiments are only for understanding and can be specifically determined according to the application scenario and actual requirements.

[0080] It should also be noted that the specific graphic content and type of the initial mask pattern are not strictly limited in the present application. It can specifically be a combined pattern composed of multiple basic patterns. Each basic pattern, such as a line segment, a circle, etc., can respectively determine the corresponding mask inspection rule during the matching process of the above mask inspection rules. Then, according to the standard spatial relationship information corresponding to each basic pattern, at least some irregular patterns that may exist in the initial mask pattern can be judged, and targeted local optimization can be carried out. Of course, the initial mask pattern can also be a simple mask pattern similar to the edge of a part of the graphic contour, such as the edge to be optimized in the above example. It can be flexibly set specifically according to the actual application scenario and the mask layout.

[0081] Based on the above rule inspection and initial optimization process of the initial mask pattern, the mask pattern that does not conform to the corresponding mask inspection rule in the mask layout can be accurately detected, and effective and practical graphic optimization can be carried out. The initial optimization of the mask pattern is efficiently and accurately realized, the mask optimization rate of the chip and the practicability and reliability of the optimized mask are improved, and a strong guarantee is provided for the production quality and yield of the chip.

[0082] S102: In the case where it is determined that there are newly generated derivative mask patterns in the initially optimized mask layout, based on the updated mask inspection rule, rule inspection is performed on the derivative mask patterns.

[0083] In step S102, after initially optimizing the initial mask pattern based on the initial mask inspection rule, according to the determined updated mask inspection rule, rule inspection can be performed on the derivative mask pattern newly generated due to the initial optimization process in the above step.

[0084] Among them, the specific determination process of the updated mask inspection rule is almost exactly the same as the determination process of the initial mask inspection rule in the above step, except that the matching object is changed from the initial mask pattern to the derivative mask pattern.

[0085] For the mask layout after initial pattern optimization, it can accurately detect whether there is a new mask layout generated due to the initial optimization, that is, the derivative mask pattern. The specific graphic type corresponding to the derivative mask pattern is not strictly limited in this application and can be determined according to the actual mask layout after initial optimization. Specifically, for example, the initial mask pattern of the edge adjusted to a partial edge contour results in the generation of a single or multiple new edges, and the newly generated edges can be used as derivative mask patterns for updated mask rule inspection.

[0086] Regarding the specific processing process for performing rule inspection on the derivative mask pattern, reference can be made to Figure 3 as shown in

[0087] Figure 3 FIG. 15 is a schematic flowchart of a process for performing rule inspection on a derivative mask pattern provided by an embodiment of the present application, including steps S301 to S305.

[0088] S301: For each derivative mask pattern, determine the mask pattern information corresponding to the derivative mask pattern in the mask layout after initial optimization.

[0089] In step S301, the technical solution provided by the embodiment of the present application can determine the corresponding mask pattern information for each derivative mask pattern existing in the mask pattern after initial optimization.

[0090] Among them, the mask pattern information corresponding to the derivative mask pattern can be specifically the same as the mask pattern information corresponding to the initial mask pattern in the above step. For example, it can include information such as a mask layer identifier, a graphic mask identifier, a paired graphic mask identifier, a projection length, and a graphic length.

[0091] S302: According to the mask pattern information corresponding to the derivative mask pattern and multiple mask inspection rules, determine the updated mask inspection rule corresponding to the derivative mask pattern.

[0092] In step 302, based on the mask pattern information corresponding to each derived mask pattern and the set of rule matching information corresponding to the multiple mask inspection rules determined in advance in the above steps, the mask inspection rules corresponding to each derived mask pattern can be determined from the multiple mask inspection rules as the updated mask inspection rules.

[0093] Among them, the specific determination process and method of the updated mask inspection rules are basically the same as the processing process of determining the initial mask inspection rules in step S101 above, and will not be elaborated here too much.

[0094] S303: Determine the standard spatial relationship information corresponding to the derived mask pattern according to the updated mask inspection rule corresponding to the derived mask pattern.

[0095] S304: Determine whether the actual spatial relationship information of the derived mask pattern in the initially optimized mask layout matches the standard spatial relationship information corresponding to the derived mask pattern.

[0096] S305: If not, determine that the derived mask pattern does not conform to the updated mask inspection rule corresponding to the derived mask pattern.

[0097] In steps S303 to S305, according to the standard spatial relationship information corresponding to the updated mask inspection rule and the actual spatial relationship information of the derived mask pattern in the initially optimized mask layout, it can be accurately judged whether the derived mask pattern conforms to the updated mask inspection rule. The specific judgment process is basically the same as the processing process of performing rule inspection on the initial mask pattern based on the initial mask inspection rule in step S101 above, and will not be elaborated here too much.

[0098] It should be specially noted that when it is determined that the derived mask pattern does not conform to the corresponding updated mask inspection rule, the technical solution provided in the embodiments of the present application will not directly perform an optimization process similar to the initial optimization of the initial mask pattern on the derived mask pattern. Instead, in subsequent steps, the initial mask pattern before the generation and optimization of the derived mask pattern is re-optimized. This is to prevent continuously optimized derived mask patterns that do not conform to the rules from continuously appearing, and to ensure the accuracy and stability of the initial optimization process.

[0099] Through the above processing process, it can be accurately detected whether the derived mask pattern in the initially optimized mask layout conforms to the corresponding inspection rules, so as to effectively ensure that no new non-conforming mask patterns appear in the optimized mask layout, improve the accuracy and practicality of the optimization process, speed up the chip mask optimization efficiency, and then improve the chip production efficiency and production quality.

[0100] S103: When it is determined that the derived mask pattern does not conform to the updated mask inspection rule, re-initialize and optimize the initial mask pattern to obtain a new initially optimized mask layout.

[0101] In step S103, when the technical solution provided by the embodiment of the present application determines that there is a derived mask pattern in the initially optimized mask layout that does not conform to the corresponding updated mask inspection rule, the initial mask pattern before optimization in the mask layout can be re-optimized to obtain a new initially optimized mask layout.

[0102] The processing process of this step can be simply understood as follows: if new additional patterns are generated due to pattern adjustment and the new patterns do not conform to the mask inspection rule, then the adjusted mask layout is rolled back to the unadjusted state and readjusted.

[0103] In the embodiment provided by the present application, the specific operation process of how to re-optimize the initial mask pattern is not strictly limited. For example, it can be a minor pattern fine-tuning that is different from the initial optimization within the optimizable range based on the above initial optimization process, or the pattern of the initially optimized mask pattern can be adjusted according to the corresponding optimizable range to achieve the purpose of re-optimization, which can be flexibly set according to actual needs.

[0104] It should be noted that the corresponding processing process of step S102 can be executed again for the re-optimized mask layout, that is, to determine whether there is a generated derived mask pattern, and determine the corresponding updated mask inspection rule for the derived mask pattern for rule inspection. If there are still derived mask patterns that do not conform to the inspection rule, the initial mask pattern is re-optimized again, and so on, repeating in a loop until no derived mask pattern is generated in the optimized mask layout, or all newly generated derived mask patterns conform to the corresponding updated mask inspection rule.

[0105] In addition to the above content, in the present application, it is considered that the mask inspection rule corresponding to the initial mask pattern after optimization in the mask layout may change, such as changes in pattern information such as pattern length and projection length. If the initially optimized mask pattern is still inspected based on the initially matched mask inspection rule to verify the optimization effect, it will lead to the problem of using a mismatched mask inspection rule to inspect the mask pattern, which may further lead to inspection errors and affect the accuracy of the detection process and the mask function of the chip.

[0106] Based on the above problems, in an embodiment provided by the present application, when it is determined that the derived mask pattern in the initially optimized mask layout conforms to the corresponding updated mask inspection rule, or when it is determined that there is no additional generation of derived mask patterns in the initially optimized mask layout, it is possible to determine whether there are mask patterns in the initially optimized mask layout that need to be optimized again according to multiple mask inspection rules.

[0107] When it is determined that there are mask patterns in the initially optimized mask layout that need to be optimized again, the initially optimized mask layout can be optimized again.

[0108] The above process can be understood as a process of optimizing and inspecting the initially optimized mask layout. However, instead of directly using the initially determined mask inspection rules for re-inspection, corresponding mask inspection rules are re-matched according to multiple mask inspection rules. Through the above processing process, rule matching and inspection are performed again on the optimized mask layout, which can effectively avoid the problem that due to layout optimization, the corresponding mask inspection rules change, and it is impossible to accurately detect whether the optimized mask pattern meets the standards.

[0109] Regarding the specific processing process of optimizing the initially optimized mask layout again, in an embodiment provided by the present application, for the initially optimized mask pattern, the corresponding re-mask inspection rule of the initially optimized mask pattern can be determined again based on the pre-constructed rule matching information set.

[0110] Then, based on the determined re-mask inspection rule, a re-rule inspection can be performed on the initially optimized mask pattern. Among them, if it is determined that the re-mask inspection rule obtained by matching is the same as the initially determined mask inspection rule for the initial mask pattern before optimization, the rule inspection can be directly skipped, and it is determined that the initially optimized mask pattern conforms to the corresponding mask inspection rule.

[0111] If it is determined during the re-rule inspection that the initially optimized mask pattern does not conform to the corresponding re-mask inspection rule, it is determined that the initially optimized mask pattern is a mask pattern that needs to be optimized again. In this case, the steps of S101 to S103 can be executed again for such mask patterns, and this process can be repeatedly cycled until a mask layout that conforms to the corresponding mask inspection rules is determined as the mask layout at the end of the final optimization.

[0112] Through the above processing process, the initially optimized mask layout can be efficiently and practically re-checked for rules and optimized, effectively ensuring that there is no mask layout in the optimized mask layout that does not conform to the actual corresponding mask inspection rules. This processing process can effectively improve the practicality and reliability of the finally determined optimized mask layout, and further significantly improve the production efficiency, quality, and chip yield of the subsequent chip production process based on the chip mask.

[0113] The above is the specific implementation manner of the mask pattern optimization method provided by the embodiments of the present application. Through the technical solutions provided by the embodiments of the present application, based on the pre-constructed two-dimensional mask rule list, the initial mask pattern in the mask layout can be checked for rules and initially optimized, and the derivative mask patterns generated after the initial optimization can be checked for rules. When it is determined that the derivative mask pattern does not conform to the rules, the initial mask pattern before optimization is re-optimized. The influence of the derivative patterns on the mask layout is fully considered, effectively improving the processing efficiency and practicality of the mask pattern optimization process.

[0114] In addition, the technical solutions provided by the present application can also perform rule matching again based on the mask inspection rules for the initially optimized mask layout without derivative mask patterns or conforming to the updated mask inspection rules, and re-optimize the mask patterns that do not meet the inspection rules. It is ensured that the mask inspection rules determined before each optimization can accurately match the mask patterns, effectively improving the detection accuracy and detection efficiency of the mask manufacturing rule inspection process, and further significantly improving the processing efficiency of the mask optimization process and the practicality of the optimization results.

[0115] Based on the same inventive concept, the embodiments of the present application also provide a mask pattern optimization device. Specifically combined with Figure 4 The mask pattern optimization device provided by the embodiments of the present application will be described in detail.

[0116] Figure 4 FIG. 4 is a schematic structural diagram of a mask pattern optimization device provided by another embodiment of the present application. The mask pattern optimization device 400 includes an initial optimization unit 401, a derivative pattern inspection unit 402, a re-optimization unit 403, and a re-optimization unit 404.

[0117] The initial optimization unit 401 is configured to check the rules of the initial mask pattern in the mask layout based on the initial mask inspection rules, and perform initial optimization according to the initial inspection results to obtain the initially optimized mask layout. The initial mask inspection rules are determined based on the matching conditions of multiple mask inspection rules and the initial mask pattern;

[0118] A derivative pattern checking unit 402, configured to perform a rule check on a derivative mask pattern based on an updated mask check rule when it is determined that there is a newly generated derivative mask pattern in the initially optimized mask layout, where the updated mask check rule is determined based on the matching situation between multiple mask check rules and the derivative mask pattern;

[0119] A re-optimization unit 403, configured to re-optimize the initial mask pattern to obtain a new initially optimized mask layout when it is determined that the derivative mask pattern does not conform to the updated mask check rule;

[0120] In some embodiments, when it is determined that there is no derivative mask pattern in the initially optimized mask layout, or when the derivative mask pattern conforms to the updated mask check rule, the above device further includes: a re-optimization unit 404, configured to determine whether there is a mask pattern that needs to be re-optimized in the initially optimized mask layout; if so, perform re-optimization on the initially optimized mask layout to obtain a re-optimized mask layout.

[0121] In some embodiments, the above re-optimization unit 404 is specifically configured to perform rule matching on the optimized mask patterns in the initially optimized mask layout based on multiple mask check rules to determine a re-mask check rule;

[0122] Perform a re-rule check on the optimized mask patterns based on the re-mask check rule;

[0123] If it is determined that the optimized mask pattern does not conform to the re-mask check rule, determine that the optimized mask pattern is a mask pattern that needs to be re-optimized.

[0124] In some embodiments, the above initial optimization unit 401 is specifically configured to determine the mask pattern information corresponding to the initial mask pattern, as well as determine the rule matching information and rule index values corresponding to multiple mask check rules;

[0125] According to the rule matching information and rule index values corresponding to multiple mask check rules, perform index arrangement on multiple mask check rules to obtain a two-dimensional mask rule list corresponding to multiple mask check rules as a rule matching information set;

[0126] According to the mask pattern information and the rule matching information set, determine an initial mask check rule that matches the initial mask pattern from multiple mask check rules.

[0127] In some embodiments, the above-mentioned initial optimization unit 401 is specifically configured to, for each mask inspection rule, based on at least one of the mask layer information, pattern mask information, paired pattern mask information, projection length interval, and pattern length interval preset corresponding to the mask inspection rule, construct a key-value pair corresponding to the mask inspection rule as the rule matching information corresponding to the mask inspection rule.

[0128] In some embodiments, the mask pattern information includes a mask layer identifier, a pattern mask identifier, a paired pattern mask identifier, a projection length, and a pattern length corresponding to the initial mask pattern;

[0129] The above-mentioned initial optimization unit 401 is specifically configured to, for each mask inspection rule, according to the mask pattern information, determine whether the mask layer identifier, pattern mask identifier, and paired pattern mask identifier corresponding to the initial mask pattern match the mask layer information, pattern mask information, and paired pattern mask information corresponding to the mask inspection rule, and determine whether the projection length and pattern length corresponding to the initial mask pattern are respectively within the projection length interval and pattern length interval corresponding to the mask inspection rule;

[0130] If so, determine that the mask inspection rule is the initial mask inspection rule corresponding to the initial mask pattern.

[0131] In some embodiments, the above-mentioned initial optimization unit 401 is specifically configured to, when it is determined that the initial inspection result indicates that the initial mask pattern does not conform to the initial mask inspection rule, determine the standard spatial relationship information corresponding to the initial mask inspection rule, where the standard spatial relationship information is used to represent the preset spatial relationship between the initial mask pattern and the paired mask pattern corresponding to the initial mask pattern;

[0132] According to the actual spatial relationship information and the standard spatial relationship information corresponding to the initial mask pattern in the mask layout, determine the optimizable range corresponding to the initial mask pattern, where the actual spatial relationship information is used to represent the actual spatial relationship between the initial mask pattern and the paired mask pattern on the mask layout;

[0133] According to the optimizable range, perform initial optimization on the initial mask pattern.

[0134] In some embodiments, the actual spatial relationship information is the shortest straight-line distance between the edge to be optimized of the initial mask pattern and the corresponding paired reference edge in the paired mask pattern, and the standard spatial relationship information is the preset numerical range corresponding to the shortest straight-line distance between the edge to be optimized and the paired reference edge;

[0135] The above-mentioned initial optimization unit 401 is specifically configured to, according to the shortest straight-line distance and the preset numerical range, determine the movable distance corresponding to the edge to be optimized as the optimizable range corresponding to the edge to be optimized.

[0136] In some embodiments, the above-mentioned derivative pattern inspection unit 402 is specifically configured to, for each derivative mask pattern, determine the mask pattern information corresponding to the derivative mask pattern in the initially optimized mask layout;

[0137] According to the mask pattern information corresponding to the derivative mask pattern and multiple mask inspection rules, determine the updated mask inspection rule corresponding to the derivative mask pattern;

[0138] According to the updated mask inspection rule corresponding to the derivative mask pattern, determine the standard spatial relationship information corresponding to the derivative mask pattern;

[0139] Determine whether the actual spatial relationship information of the derivative mask pattern in the initially optimized mask layout matches the standard spatial relationship information corresponding to the derivative mask pattern;

[0140] If not, determine that the derivative mask pattern does not conform to the updated mask inspection rule corresponding to the derivative mask pattern.

[0141] Figure 5 It is a schematic structural diagram of an electronic device provided by another embodiment of the present application.

[0142] The electronic device may include a processor 501 and a memory 502 storing computer program instructions.

[0143] Specifically, the above-mentioned processor 501 may include a central processing unit (CPU), or an application specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of the present application.

[0144] The memory 502 may include a mass storage for data or instructions. By way of example and not limitation, the memory 502 may include a hard disk drive (HDD), a floppy disk drive, a flash memory, an optical disc, a magneto-optical disc, a magnetic tape, or a universal serial bus (USB) drive, or a combination of two or more of these. In a suitable case, the memory 502 may include a removable or non-removable (or fixed) medium. In a suitable case, the memory 502 may be inside or outside the integrated gateway disaster recovery device. In a specific embodiment, the memory 502 is a non-volatile solid state memory.

[0145] The memory may include a read-only memory (ROM), a random access memory (RAM), a magnetic disk storage medium device, an optical storage medium device, a flash memory device, an electrical, optical, or other physical / tangible memory storage device. Thus, generally, the memory includes one or more tangible (non-transitory) computer-readable storage media (e.g., memory devices) encoded with software including computer-executable instructions, and when the software is executed (e.g., by one or more processors), it is operable to perform the operations described with reference to the method according to the first aspect of the present application.

[0146] The processor 501 reads and executes the computer program instructions stored in the memory 502 to implement any one of the mask pattern optimization methods in the above embodiments.

[0147] In one example, the electronic device may further include a communication interface 503 and a bus 500. Among them, as Figure 5 shown, the processor 501, the memory 502, and the communication interface 503 are connected through the bus 500 and complete communication with each other.

[0148] The communication interface 503 is mainly used to implement communication between various modules, devices, units, and / or devices in the embodiments of the present application.

[0149] The bus 500 includes hardware, software, or both, and couples the components to each other. By way of example and not limitation, the bus may include an Accelerated Graphics Port (AGP) or other graphics bus, an Enhanced Industry Standard Architecture (EISA) bus, a Front Side Bus (FSB), a HyperTransport (HT) interconnect, an Industry Standard Architecture (ISA) bus, an InfiniBand interconnect, a Low Pin Count (LPC) bus, a memory bus, a MicroChannel Architecture (MCA) bus, a Peripheral Component Interconnect (PCI) bus, a PCI-Express (PCI-X) bus, a Serial Advanced Technology Attachment (SATA) bus, a Video Electronics Standards Association Local (VLB) bus, or other suitable buses or a combination of two or more of these. In a suitable case, the bus 500 may include one or more buses. Although the embodiments of the present application describe and illustrate specific buses, the present application contemplates any suitable bus or interconnect.

[0150] In addition, in combination with the mask pattern optimization method in the above embodiments, the embodiments of the present application may be implemented by providing a computer storage medium. Computer program instructions are stored on the computer storage medium; when the computer program instructions are executed by a processor, any one of the mask pattern optimization methods in the above embodiments is implemented.

[0151] The embodiments of the present application further provide a computer program product. When the instructions in the computer program product are executed by the processor of the electronic device, the electronic device is caused to execute the mask pattern optimization method provided in the embodiments of the present application.

[0152] The embodiments of the present application further provide an electronic device, which includes: a processor and a memory storing computer program instructions, and the processor is coupled to the memory; when the processor executes the computer program instructions, the mask pattern optimization method provided by the embodiments of the present application is implemented.

[0153] It should be clear that the present application is not limited to the specific configurations and processes described above and shown in the figures. For the sake of brevity, the detailed descriptions of known methods are omitted here. In the above embodiments, several specific steps are described and shown as examples. However, the method process of the present application is not limited to the specific steps described and shown, and those skilled in the art can make various changes, modifications and additions, or change the order between steps after understanding the spirit of the present application.

[0154] The functional blocks shown in the above structural block diagrams can be implemented as hardware, software, firmware, or a combination thereof. When implemented in hardware, it can be, for example, an electronic circuit, an application specific integrated circuit (ASIC), appropriate firmware, a plug-in, a functional card, etc. When implemented in software, the elements of the present application are programs or code segments for performing the required tasks. The program or code segment can be stored in a machine-readable medium, or transmitted through a data signal carried in a carrier wave on a transmission medium or a communication link. A "machine-readable medium" can include any medium capable of storing or transmitting information. Examples of machine-readable media include electronic circuits, semiconductor memory devices, ROM, flash memory, erasable ROM (EROM), floppy disks, CD-ROMs, optical discs, hard disks, fiber optic media, radio frequency (RF) links, and so on. The code segment can be downloaded via a computer network such as the Internet, an intranet, etc.

[0155] It should also be noted that the exemplary embodiments mentioned in the present application describe some methods or systems based on a series of steps or devices. However, the present application is not limited to the order of the above steps, that is, the steps can be executed in the order mentioned in the embodiments, or different from the order in the embodiments, or several steps can be executed simultaneously.

[0156] As described above with reference to the flowcharts and / or block diagrams of methods, apparatus (systems) and computer program products according to embodiments of the present application. It should be understood that each block in the flowchart and / or block diagram, and the combination of blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device to produce a machine, such that the instructions executed by the processor of the computer or other programmable data processing device enable the implementation of the functions / actions specified in one or more blocks of the flowchart and / or block diagram. Such a processor can be, but is not limited to, a general-purpose processor, a special-purpose processor, a special application processor, or a field programmable logic circuit. It should also be understood that each block in the block diagram and / or flowchart, and the combination of blocks in the block diagram and / or flowchart, can also be implemented by dedicated hardware that performs the specified functions or actions, or can be implemented by a combination of dedicated hardware and computer instructions.

[0157] As mentioned above, the above is only the specific implementation manner of the present application. Those skilled in the art can clearly understand that for the convenience and conciseness of description, the specific working processes of the above-described systems, modules, and units can refer to the corresponding processes in the foregoing method embodiments and will not be elaborated herein. It should be understood that the protection scope of the present application is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present application can easily think of various equivalent modifications or substitutions, and these modifications or substitutions should all be covered within the protection scope of the present application.

Claims

1. A mask pattern optimization method, characterized in that, Including: Based on the initial mask inspection rules, perform rule inspection on the initial mask patterns in the mask layout, and perform initial optimization according to the initial inspection results to obtain the mask layout after initial optimization. The initial mask inspection rules are determined based on the matching conditions of multiple mask inspection rules and the initial mask patterns; When it is determined that there are newly generated derivative mask patterns in the mask layout after initial optimization, based on the updated mask inspection rules, perform rule inspection on the derivative mask patterns. The updated mask inspection rules are determined based on the matching conditions of the multiple mask inspection rules and the derivative mask patterns; When it is determined that the derivative mask patterns do not conform to the updated mask inspection rules, perform re-initial optimization on the initial mask patterns to obtain a new mask layout after initial optimization.

2. The method according to claim 1, wherein When it is determined that there are no such derivative mask patterns in the mask layout after initial optimization, or when the derivative mask patterns conform to the updated mask inspection rules, the method further includes: Determine whether there are mask patterns in the mask layout after initial optimization that need to be optimized again; If so, perform re-optimization on the mask layout after initial optimization to obtain the mask layout after re-optimization.

3. The method according to claim 2, wherein Determining whether there are mask patterns in the mask layout after initial optimization that need to be optimized again includes: Based on the multiple mask inspection rules, perform rule matching on the optimized mask patterns in the mask layout after initial optimization to determine the re-mask inspection rules; Based on the re-mask inspection rules, perform re-rule inspection on the optimized mask patterns; If it is determined that the optimized mask patterns do not conform to the re-mask inspection rules, determine that the optimized mask patterns are the mask patterns that need to be optimized again.

4. The method according to claim 1, wherein The determination process of the initial mask inspection rules includes: Determine the mask pattern information corresponding to the initial mask patterns, and determine the rule matching information and rule index values corresponding to the multiple mask inspection rules; According to the rule matching information and rule index values corresponding to the multiple mask inspection rules, perform index arrangement on the multiple mask inspection rules to obtain a two-dimensional mask rule list corresponding to the multiple mask inspection rules as a rule matching information set; According to the mask pattern information and the rule matching information set, determine the initial mask inspection rules that match the initial mask patterns from the multiple mask inspection rules.

5. The method according to claim 4, wherein Determining the rule matching information corresponding to the multiple mask inspection rules includes: For each mask inspection rule, based on at least one of the preset mask layer information, graphic mask information, paired graphic mask information, projection length interval, and graphic length interval corresponding to the mask inspection rule, construct a key-value pair corresponding to the mask inspection rule as the rule matching information corresponding to the mask inspection rule.

6. The method according to claim 5, characterized in that, The mask pattern information includes the mask layer identifier, graphic mask identifier, paired graphic mask identifier, projection length, and graphic length corresponding to the initial mask patterns. Determining an initial mask inspection rule that matches the initial mask pattern from the multiple mask inspection rules according to the mask pattern information and the set of rule matching information includes: For each mask inspection rule, according to the mask pattern information, determining whether the mask layer identifier, the graphic mask identifier, and the paired graphic mask identifier corresponding to the initial mask pattern match the mask layer information, the graphic mask information, and the paired graphic mask information corresponding to this mask inspection rule, and determining whether the projected length and the graphic length corresponding to the initial mask pattern are respectively within the projected length range and the graphic length range corresponding to this mask inspection rule; If so, determining this mask inspection rule as the initial mask inspection rule corresponding to the initial mask pattern.

7. The method according to claim 1, wherein Based on the initial mask inspection rule, performing a rule inspection on the initial mask pattern in the mask layout and performing an initial optimization according to the initial inspection result, including: When it is determined that the initial inspection result indicates that the initial mask pattern does not conform to the initial mask inspection rule, determining the standard spatial relationship information corresponding to the initial mask inspection rule, where the standard spatial relationship information is used to represent a preset spatial relationship between the initial mask pattern and the paired mask pattern corresponding to the initial mask pattern; According to the actual spatial relationship information corresponding to the initial mask pattern in the mask layout and the standard spatial relationship information, determining the optimizable range corresponding to the initial mask pattern, where the actual spatial relationship information is used to represent the actual spatial relationship between the initial mask pattern and the paired mask pattern on the mask layout; Performing an initial optimization on the initial mask pattern according to the optimizable range.

8. The method according to claim 7, characterized in that The actual spatial relationship information is the shortest straight-line distance between the edge to be optimized of the initial mask pattern and the corresponding paired reference edge in the paired mask pattern, and the standard spatial relationship information is the preset numerical range corresponding to the shortest straight-line distance between the edge to be optimized and the paired reference edge; Determining the optimizable range corresponding to the initial mask pattern according to the spatial relationship information corresponding to the initial mask pattern in the mask layout and the standard spatial relationship information includes: Determining the movable distance corresponding to the edge to be optimized according to the shortest straight-line distance and the preset numerical range as the optimizable range corresponding to the edge to be optimized.

9. The method according to claim 1, characterized in that Performing a rule inspection on the derived mask pattern based on the updated mask inspection rule, including: For each derived mask pattern, determining the mask pattern information corresponding to this derived mask pattern in the mask layout after the initial optimization; According to the mask pattern information corresponding to this derived mask pattern and the multiple mask inspection rules, determining the updated mask inspection rule corresponding to this derived mask pattern; According to the updated mask inspection rule corresponding to this derived mask pattern, determining the standard spatial relationship information corresponding to this derived mask pattern; Determining whether the actual spatial relationship information of this derived mask pattern in the mask layout after the initial optimization matches the standard spatial relationship information corresponding to this derived mask pattern; Otherwise, it is determined that the derived mask pattern does not conform to the updated mask inspection rule corresponding to the derived mask pattern.

10. An electronic device, characterized in that, The device includes: a processor and a memory storing computer program instructions; When the processor executes the computer program instructions, the mask pattern optimization method according to any one of claims 1-9 is implemented.

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