Method for testing read-write reliability of nonvolatile memory

Abstract

The invention discloses a method for testing read-write reliability of a nonvolatile memory, and relates to the technical field of memory testing. Comprising the following steps: acquiring an operation environment parameter and an operation intensity parameter of a target memory to obtain an environment information item and an intensity information item; performing stage division on the environment information item and the intensity information item, dividing the environment information item and the intensity information item into at least two environment stage items and at least two intensity stage items, and obtaining an environment stage set and an intensity stage set; according to the method, the running environment parameters, such as temperature, voltage fluctuation and running intensity parameters, such as read-write frequency and network supply, of the target memory are comprehensively considered, the environment information items and the intensity information items are acquired, stage division and combination are performed to obtain the test environment set, and read-write performance test is performed in different test environments, so that the test efficiency is improved. And the first test information set is obtained, so that the performance of the memory under various actual working conditions can be comprehensively and accurately reflected.

Description

Technical Field

[0001] The present invention relates to the technical field of memory testing, and specifically provides a method for testing the read and write reliability of a non-volatile memory. Background Art

[0002] A memory is often referred to as internal memory and is a device or area in a computer system used to temporarily store data and programs. Its function is to enable the computer to quickly access the data and instructions required by the running programs to ensure the normal operation and efficient processing of the system. A non-volatile memory is a type of storage device or material that can retain stored data even after power is cut off. The characteristic is that the data stored in it remains after the power is turned off and will not be lost. Common non-volatile memories include hard disk drives and solid-state drives, which are used to store large amounts of data for a long time.

[0003] The read and write test method, device, and storage medium for a memory with the patent publication number CN119541611A configure multiple test threads for a memory. Each test thread can test at least one row area, so that when multiple test threads are synchronously called to test the same memory, the feedback of the test results at different storage locations of a single memory can be accelerated, thereby increasing the probability of early discovery of memory fault points and improving the test efficiency. At this time, since the test efficiency of a single memory is improved, when testing multiple memories, the overall test efficiency will be improved. And compared with the method of providing test environments for multiple memories, the test cost is lower. Therefore, the test efficiency of the embodiments of the present application is higher and the test cost is lower.

[0004] When the above and similar technical solutions are used to test the read and write performance of a memory, since fixed data is used for testing, and the working environment of the memory is not fixed but in a constantly fluctuating state, the test results obtained at this time cannot reflect the true performance of the memory. At the same time, due to the capacitive coupling effect of storage units, even when testing is carried out by changing the test environment and test intensity, the read and write performance test of the memory is still inaccurate due to the interference of the data states of adjacent units in the memory. Summary of the Invention

[0005] The purpose of the present invention is to provide a method for testing the read and write reliability of a non-volatile memory to solve the problems raised in the above background art.

[0006] To achieve the above purpose, the present invention provides the following technical solution: A method for testing the read and write reliability of a non-volatile memory, including: Obtain the operating environment parameters and operating intensity parameters of the target memory to obtain an environmental information item and an intensity information item; Divide the environmental information items and intensity information items into at least two environmental stage items and at least two intensity stage items to obtain an environmental stage set and an intensity stage set; Based on the combination result of the environmental stage set and the intensity stage set, obtain a test environment set for the target memory. The test environment set includes at least four test environment items formed by the mutual combination of two environmental stage items and two intensity stage items; Set test information, where the test information includes the test data volume. Test the read and write performance of the target memory based on the test environment item to obtain a first test information set. The first test information set includes at least first test information items corresponding to the four test environment items, and obtain the true performance of the target memory under different working environments; Set a maximum cut-off value based on the test information. The maximum cut-off value is a fixed value. Cut the test data into copies based on the maximum cut-off value to obtain a cut test set. The cut test set includes at least one cut test item composed of different cut numbers; Based on the test environment item, obtain the write and read speeds of the cut test item through the acquisition method, and then obtain the write speed and read speed corresponding to the cut test item to obtain a cut write set and a cut read set; Based on the cut write item and the cut read item, compare them with the first test information item under the corresponding test environment item through the comparison method to obtain the interference data caused by the capacitance coupling effect of the storage unit, and then realize the judgment of the capacitance coupling effect interference of adjacent units in the memory.

[0007] Furthermore, the operating environment parameters include temperature and voltage fluctuations, and the operating intensity parameters include read and write frequencies and network supply. The acquisition methods for environmental information items and intensity information items include: Set an acquisition period, and the acquisition period is a fixed cycle. Based on the acquisition period, obtain the working limit temperature information of the target memory to obtain extremely high temperature items and extremely low temperature items. At the same time, obtain the voltage limit information to obtain the extremely high voltage value and the extremely low voltage value, and then obtain the environmental information items; Based on the acquisition period, obtain the read and write gap information of the target memory and the network supply information matching the read and write gap information to obtain a read and write gap set and a network matching set. The read and write gap set includes at least two read and write gap items, and the network matching set includes at least two network matching items corresponding to the read and write gap items, and then obtain the intensity information items.

[0008] Furthermore, the acquisition method for the environmental stage set includes: Obtain the difference between the extremely high temperature item and the extremely low temperature item, and the difference between the extremely high voltage value and the extremely low voltage value, to obtain the temperature difference item and the voltage difference item. Obtain the intermediate value information of the temperature difference item and the voltage difference item to obtain the temperature median item and the voltage median item; Based on the combined results of the extremely high temperature item, the extremely low temperature item, and the temperature median item, obtain the first temperature range and the second temperature range. Based on the combined results of the extremely high voltage value, the extremely low voltage value, and the voltage median item, obtain the first voltage range and the second voltage range; Obtain the combined results of the first temperature range, the second temperature range, the first voltage range, and the second voltage range to obtain the first combined set. Set the first division interval to divide the first combined set to obtain at least two environmental stage items, and then obtain the environmental stage set.

[0009] Furthermore, the method for obtaining the intensity stage set includes: Obtain the average value data of the read-write gap set and the network matching set to obtain the gap average item and the network average item; Based on the gap average item and the network average item, perform divisions respectively to obtain the first gap range, the second gap range, the first network range, and the second network range; Obtain the combined results of the first gap range, the second gap range, the first network range, and the second network range to obtain the second combined set. Set the second division interval to divide the second combined set to obtain at least two intensity stage items, and then obtain the intensity stage set.

[0010] Furthermore, the method for setting the test information includes: Based on the acquisition period, obtain the storage data volume information of the target memory to obtain the storage information set; Based on the storage information set, obtain the maximum value of the storage data volume information, and use the maximum value of the data as the test data volume, and then obtain the test information.

[0011] Furthermore, the method for obtaining the first test information set includes: Based on the test environment set, sort the test environment items in the test environment set to obtain the sorted test set; Based on the test information, perform read-write performance tests on the target memory in sequence according to the sorted test set to obtain the write rate set and the read rate set. The write rate set and the read rate set at least include four write rate items and read rate items corresponding to the test environment items. The write rate set and the read rate set are combined to obtain the first test information set.

[0012] Furthermore, the method for obtaining the cutting test set includes: Based on the fixed value corresponding to the maximum cut value, at least one cut comparison item is obtained according to the ascending order of integers, and the cut comparison item is a fixed value; Based on the cut comparison items, the test data is respectively cut into equal parts to obtain at least one cut test item, and the cut test items are combined to obtain a cut test set.

[0013] Furthermore, the obtaining method includes: S1: The cut test information is separately written according to the number of cut parts in the cut test item to obtain a write speed set, and the read speed after the test information is completely written is obtained to obtain a read speed item; S2: The average rate of the write speed set is obtained to obtain a write speed item. Based on the write speed item and the read speed item, the write speed and the read speed corresponding to the cut test item are obtained; Based on the cut test set, steps S1 - S2 are repeated to sequentially obtain the write speed and the read speed corresponding to the cut test item, and a cut write set and a cut read set are obtained.

[0014] Furthermore, the comparison method includes: Based on the first test information item, the test environment item is distinguished, and the write rate and the read rate corresponding to the test environment item in the first test information item are respectively obtained to obtain a first comparison item; Based on the cut write set and the cut read set, the write rate and the read rate corresponding to the test environment item in the cut write set and the cut read set are respectively obtained to obtain a second comparison item; The difference between the write rates and the difference between the read rates of the first comparison item and the second comparison item are compared, a fluctuation threshold is set, and it is judged whether the difference between the write rates and the difference between the read rates exceed the fluctuation threshold, so as to obtain the changes in the write speed and the read speed after cutting the data into different numbers of parts under a fixed test environment, obtain the interference data caused by the capacitive coupling effect of the storage unit, and thus realize the judgment of the capacitive coupling effect interference between adjacent units in the memory.

[0015] Compared with the prior art, the beneficial effects of the present invention are: The read - write reliability test method for this non - volatile memory comprehensively considers the operating environment parameters of the target memory, such as temperature, voltage fluctuation, and operating intensity parameters, such as read - write frequency and network supply. By obtaining the environmental information item and the intensity information item and performing stage division, a test environment set is combined, and the read - write performance test is carried out under different test environments to obtain a first test information set, which can comprehensively and accurately reflect the performance of the memory under various actual working conditions, provide richer and more real data for the performance evaluation of the memory, and help to more accurately understand the working ability and potential problems of the memory.

[0016] Meanwhile, based on the test information, set the maximum cutting value to cut the test data into portions to obtain a cut test set, and obtain the writing and reading speeds of the cut test items in different test environments. Use the data maximum value as the test data volume for testing, which can detect the performance of the target memory under the maximum transmitted data. Through the read and write tests of the cut data, further explore the performance changes of the memory under different data processing scales, and more deeply dig out the performance limit of the memory, providing strong support for optimizing the memory performance and coping with big data processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic diagram of the overall process of the present invention; Figure 2 It is a schematic diagram of the relationship between the environmental information item and the intensity information item of the present invention; Figure 3 It is a schematic diagram of the process structure for obtaining the environmental stage set of the present invention; Figure 4 It is a schematic diagram of the relationship between the temperature median item and the voltage median item of the present invention; Figure 5 It is a schematic diagram for obtaining the first combination set of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0018] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0019] When performing read and write performance tests on a memory, traditional testing methods, especially those that rely on fixed data and static test environments, often struggle to capture the true performance of the memory in actual applications. In actual applications, the dynamic fluctuations in the memory's working environment are also an important consideration. The working environment of the memory is not constant but fluctuates continuously with time and application load. These environmental factors can have a significant impact on the read and write performance of the memory. For example, an increase in temperature can cause a decrease in the charge retention ability of memory cells, thereby affecting the read and write speed and data reliability. Voltage fluctuations may cause the threshold voltage of memory cells to shift, affecting the accuracy of read and write operations. If the test environment is static and unable to simulate these dynamic fluctuations, then the test results cannot truly reflect the performance of the memory under various working conditions. Even more complex is the capacitive coupling effect between storage cells, which further increases the difficulty of read and write performance testing. Due to the very close physical distance between storage cells, the data states of adjacent cells will interfere with each other. When a cell performs a write operation, its voltage change may affect the voltage state of adjacent cells through capacitive coupling, resulting in read and write errors or performance degradation. Even when testing is carried out by changing the test environment and test intensity, this capacitive coupling effect still exists and may affect the test results. And a read and write reliability testing method for a non-volatile memory provided in this application, by comprehensively considering the operating environment parameters of the target memory, such as temperature and voltage fluctuations, and operating intensity parameters, such as read and write frequency and network supply, by obtaining environmental information items and intensity information items and performing stage division, combining to obtain a test environment set, and performing read and write performance tests under different test environments to obtain a first test information set, can comprehensively and accurately reflect the performance of the memory under various actual working conditions, providing richer and more real data for the performance evaluation of the memory, helping to more accurately understand the working ability and potential problems of the memory, as Figure 1 shown, including steps S100 - S700.

[0020] Step S100: Obtain the operating environment parameters and operating intensity parameters of the target memory to obtain environmental information items and intensity information items.

[0021] It should be noted that, such as Figure 2As shown, the operating environment parameters include temperature and voltage fluctuations, and the operating intensity parameters include read / write frequency and network supply. The methods for obtaining environmental information items and intensity information items are as follows: Set an acquisition period, which is a fixed cycle. The set acquisition period is 10 days. Based on the acquisition period, obtain the working limit temperature information of the target memory. During the acquisition period, there will be an extremely high value and an extremely low value for the working temperature of the target memory, thereby obtaining the extremely high temperature item and the extremely low temperature item. At the same time, obtain the voltage limit information. During the acquisition period, the voltage suffered by the target memory will have an extremely high value and an extremely low value during the fluctuation process, thereby obtaining the extremely high voltage value and the extremely low voltage value, and then obtaining the environmental information items; Based on the acquisition period, obtain the read / write gap information of the target memory and the network supply information matching the read / write gap information, obtain the read / write gap set and the network matching set. The read / write gap set includes at least two read / write gap items, and the network matching set includes at least two network matching items corresponding to the read / write gap items, and then obtain the intensity information items.

[0022] In a specific implementation process, it is now necessary to obtain the operating environment parameters and operating intensity parameters of a certain memory A. According to the set acquisition period, the working time, working temperature, voltage fluctuation, read / write gap, and network supply information of this memory A are obtained as shown in Table 1: Table 1 Date Working hours / h Working temperature / °C Voltage fluctuation / V Read-write gap / min Network supply / Mbps The first day 18.5 32.1 218.7 45 872 The second day 22.0 35.6 225.3 38 756 The third day 15.2 28.3 213.9 62 932 The fourth day 19.8 38.2 201.5 55 689 The fifth day 23.5 33.7 235.8 41 1045 The sixth day 16.7 31.5 219.2 89 598 The seventh day 20.3 36.9 227.6 34 913 The eighth day 12.0 27.4 208.3 73 764 The ninth day 21.6 34.8 222.1 48 831 The tenth day 17.9 29.6 216.7 67 967 According to Table 1, the extremely high temperature item and the extremely low temperature item of this memory A are 38.2°C and 27.4°C respectively, and the extremely high voltage value and the extremely low voltage value of this memory A are 235.8V and 201.5V respectively, thereby obtaining the environmental information items. At the same time, the read / write gap set of this memory A is obtained as 45, 38, 62, 55, 41, 89, 34, 73, 48, 67, and the network matching set is 872, 756, 932, 689, 1045, 598, 913, 764, 831, 967, and then obtain the intensity information items.

[0023] Step S200: Perform stage division on the environmental information items and intensity information items.

[0024] It should be noted that the environmental information items and intensity information items are divided into at least two environmental stage items and at least two intensity stage items to obtain the environmental stage set and the intensity stage set.

[0025] It should be noted that as Figure 3As shown, the method for obtaining the environmental stage set includes: obtaining the difference between the extremely high temperature item and the extremely low temperature item, and the difference between the extremely high voltage value and the extremely low voltage value, to obtain the temperature difference item and the voltage difference item, and obtaining the intermediate value information of the temperature difference item and the voltage difference item to obtain the temperature median item and the voltage median item; based on the combination results of the extremely high temperature item, the extremely low temperature item, and the temperature median item, obtaining the first temperature range and the second temperature range, and based on the combination results of the extremely high voltage value, the extremely low voltage value, and the voltage median item, obtaining the first voltage range and the second voltage range; obtaining the combination results of the first temperature range, the second temperature range, the first voltage range, and the second voltage range to obtain the first combination set, setting the first division interval to divide the first combination set to obtain at least two environmental stage items, and further obtaining the environmental stage set.

[0026] In the specific implementation process, such as Figures 4 - 5As shown, the operating environment parameters and operating intensity parameters of a certain memory B are obtained. Among them, the extremely high temperature item and the extremely low temperature item are 38.2°C and 27.4°C respectively, the extremely high voltage value and the extremely low voltage value are 235.8V and 201.5V respectively. At this time, the difference between the extremely high temperature item and the extremely low temperature item and the difference between the extremely high voltage value and the extremely low voltage value are obtained, which are 10.8°C and 34.3V respectively, obtaining the temperature difference item and the voltage difference item. The median value information of the temperature difference item and the voltage difference item is obtained, obtaining the temperature median item and the voltage median item, which are 5.4°C and 17.15V respectively. Based on the combined results of the extremely high temperature item, the extremely low temperature item and the temperature median item, the first temperature range and the second temperature range are obtained. At this time, the first temperature range and the second temperature range are 27.4°C - 32.8°C and 32.8°C - 38.2°C respectively. Based on the combined results of the extremely high voltage value, the extremely low voltage value and the voltage median item, the first voltage range and the second voltage range are obtained. The first voltage range and the second voltage range are 201.5V - 218.65V and 218.65V - 235.8V respectively; the combined results of the first temperature range, the second temperature range and the first voltage range, the second voltage range are obtained, obtaining the first combined set. At this time, the first combined set is: (27.4°C - 32.8°C, 201.5V - 218.65V), (27.4°C - 32.8°C, 218.65V - 235.8V), (32.8°C - 38.2°C, 201.5V - 218.65V), (32.8°C - 38.2°C, 218.65V - 235.8V). The first division interval is set to divide the first combined set. The set first division interval is 3:1. At this time, the division result is: (27.4°C - 32.8°C, 201.5V - 218.65V), (27.4°C - 32.8°C, 218.65V - 235.8V), (32.8°C - 38.2°C, 201.5V - 218.65V) is the first division result, (32.8°C - 38.2°C, 218.65V - 235.8V) is the second division result, and then two environmental stage items are obtained, which are respectively set as the low-level environment and the high-level environment, obtaining the environmental stage set.

[0027] It should be noted that the method for obtaining the intensity stage set includes: obtaining the average value data of the read-write gap set and the network matching set, obtaining the gap average item and the network average item; respectively dividing based on the gap average item and the network average item, obtaining the first gap range, the second gap range and the first network range and the second network range; obtaining the combined results of the first gap range, the second gap range and the first network range, the second network range, obtaining the second combined set, setting the second division interval to divide the second combined set, obtaining at least two intensity stage items, and then obtaining the intensity stage set.

[0028] In a specific implementation process, the operating intensity parameters of a certain memory B are obtained. The read / write gap set of the memory B is 45, 38, 62, 55, 41, 89, 34, 73, 48, 67. At this time, the average gap term is 55.2 min. The network matching set is obtained as 872, 756, 932, 689, 1045, 598, 913, 764, 831, 967. At this time, the network average term is 836.7 Mbps. Then the network average term is obtained. Based on the average gap term, it is divided to obtain the first gap range and the second gap range. At this time, the first gap range is <55.2 min, and the second gap range is >55.2 min. Based on the network average term, it is divided to obtain the first network range and the second network range. At this time, the first network range is <836.7 Mbps, and the second network range is >836.7 Mbps. The combination results of the first gap range, the second gap range, the first network range, and the second network range are obtained to get the second combination set. The second combination set is (<55.2 min, <836.7 Mbps), (<55.2 min, >836.7 Mbps), (>55.2 min, <836.7 Mbps), (>55.2 min, >836.7 Mbps). A second division interval is set to divide the second combination set. The second division interval is 3:1. At this time, the division result is: (<55.2 min, <836.7 Mbps), (<55.2 min, >836.7 Mbps), (>55.2 min, <836.7 Mbps) is the third division result, and (>55.2 min, >836.7 Mbps) is the fourth division result. Then two intensity stage terms are obtained, which are respectively set as low intensity and high intensity, and the intensity stage set is obtained.

[0029] Step S300: Based on the combination result of the environment stage set and the intensity stage set, obtain the test environment set of the target memory.

[0030] It should be noted that the test environment set includes at least four test environment items formed by the mutual combination of two environment stage terms and two intensity stage terms. When both the environment stage term and the intensity stage term are two, the test environment items are four at this time.

[0031] Step S400: Set test information, where the test information includes the test data volume, and test the read / write performance of the target memory based on the test environment item.

[0032] It should be noted that after testing, a first test information set is obtained. The first test information set includes at least first test information items corresponding to four test environment items, and the true performance of the target memory under different working environments is obtained. The method for setting test information includes: based on the acquisition period, the acquisition period is 10 days, the storage data volume information of the target memory is obtained to get a storage information set; based on the storage information set, the maximum value of the storage data volume information is obtained, and the maximum value of the data is used as the test data volume, and then test information is obtained. When the maximum value of the data is used as the test data volume, the test result of the target memory under the maximum transmitted data can be detected, and thus the performance of the target memory can be detected more accurately.

[0033] It should be noted that the method for obtaining the first test information set includes: based on the test environment set, sorting the test environment items in the test environment set to get a sorted test set; based on the test information, sequentially performing read and write performance tests on the target memory according to the sorted test set to obtain a write rate set and a read rate set. The write rate set and the read rate set include at least four write rate items and read rate items corresponding to the test environment items, and the write rate set and the read rate set are combined to obtain the first test information set.

[0034] In the specific implementation process, now it is necessary to perform read and write performance tests on a certain memory C, and the obtained test environment set is: (low-level environment, low-level intensity), (low-level environment, high-level intensity), (high-level environment, low-level intensity), (high-level environment, high-level intensity). At this time, sort these test environment items respectively, and the obtained sorting results are serial number 1, serial number 2, serial number 3, and serial number 4 respectively, and sequentially perform read and write performance tests on the target memory. The test information is 500MB. According to the set test environment set, the test environment is shown in Table 2 at this time: Table 2 Test environment Temperature Voltage Read-write gap Network supply Writing rate Reading rate Serial number 1 28℃ 205V 40 min 800 Mbps 245 MB / s 320 MB / s Serial number 2 28℃ 205V 60 min 850 Mbps 248 MB / s 325 MB / s Serial number 3 35℃ 220V 40 min 800 Mbps 240 MB / s 315 MB / s Serial number 4 35℃ 220V 60 min 850 Mbps 242 MB / s 318 MB / s Furthermore, a first test information set is obtained.

[0035] Step S500: Set a maximum cut value based on the test information, and cut the test data into portions based on the maximum cut value.

[0036] It should be noted that the maximum cut value is a fixed value. After cutting, a cut test set is obtained. The cut test set includes at least one cut test item composed of different cut portions. The method for obtaining the cut test set includes: based on the fixed value corresponding to the maximum cut value, obtaining at least one cut control item in ascending order of integers, and the cut control item is a fixed value; based on the cut control item, respectively cutting the test data into equal portions to obtain at least one cut test item, and the cut test items are combined to obtain the cut test set.

[0037] Specifically, when the fixed value corresponding to the maximum cutting value is 3, three cutting comparison items, namely 1, 2, and 3, will be obtained according to the ascending order of integers. When the fixed value corresponding to the maximum cutting value is 2, two cutting comparison items, namely 1 and 2, will be obtained according to the ascending order of integers. At this time, according to the cutting comparison items, the test data is equally divided and cut to obtain at least one cutting test item, and the cutting test items are combined to obtain a cutting test set.

[0038] Step S600: Based on the test environment items, obtain the writing and reading speeds of the cutting test items through the acquisition method.

[0039] It should be noted that the writing speed and reading speed corresponding to the cutting test items are obtained to obtain a cutting write set and a cutting read set. The acquisition method includes: S1: Individually write the cut test information according to the number of cuts in the cutting test item to obtain a write speed set, and obtain the reading speed item after the test information is completely written; S2: Obtain the average rate of the write speed set to obtain the write speed item. Based on the write speed item and the reading speed item, obtain the writing speed and reading speed corresponding to the cutting test item; Based on the cutting test set, repeat steps S1-S2 to sequentially obtain the writing speed and reading speed corresponding to the cutting test item, and obtain a cutting write set and a cutting read set.

[0040] In a specific implementation process, the maximum cutting value is set to 1. At this time, there is only one cutting comparison item, and then a cutting test item is obtained, which is 1. At this time, it is necessary to perform a read-write performance test on a certain memory D, and the test information is 500MB. According to the set test environment set, the test environment items are sorted, and the sorting results are serial number 1, serial number 2, serial number 3, and serial number 4 respectively. According to the set cutting test item, the test information is cut into a first part and a second part, both of which are 250MB. The first part and the second part are individually written to obtain a write speed set, and the reading speed item is obtained after the test information is completely written, as shown in Table 3: Table 3 Test environment Temperature Voltage Read-write gap Network supply Writing rate of the first part Writing rate of the second part Reading rate 28℃ 205V Serial number 1 40 min 800 Mbps 245 MB / s 250 MB / s 325 MB / s 28℃ 205V Serial number 2 60 min 850 Mbps 248 MB / s 256 MB / s 332 MB / s 35℃ 220V Serial number 3 40 min 800 Mbps 240 MB / s 246 MB / s 321 MB / s 35℃ 220V Serial number 4 60 min 850 Mbps 242 MB / s 240 MB / s 320 MB / s As can be seen from Table 3, the average rates of the write speed set are 247.5MB / s, 252MB / s, 243MB / s, and 241MB / s respectively, and the write speed item is obtained.

[0041] Step S700: Compare with the first test information item under the corresponding test environment item through the comparison method.

[0042] It should be noted that interference data caused by the capacitive coupling effect of the storage unit is obtained, and then the judgment of the capacitive coupling effect interference of adjacent units in the memory is realized. The comparison method includes: based on the first test information item, the test environment item is distinguished, and the write rate and read rate corresponding to the test environment item in the first test information item are respectively obtained to obtain the first comparison item; based on the cut write set and the cut read set, the write rate and read rate corresponding to the test environment item in the cut write set and the cut read set are respectively obtained to obtain the second comparison item; the difference between the write rate and the read rate of the first comparison item and the second comparison item is compared, and a fluctuation threshold is set, and the fluctuation threshold is ±5%. It is judged whether the difference between the write rate and the read rate exceeds the fluctuation threshold, and then the changes in the write speed and the read speed after cutting the data into different parts under a fixed test environment are obtained, and the interference data caused by the capacitive coupling effect of the storage unit is obtained, and then the judgment of the capacitive coupling effect interference of adjacent units in the memory is realized.

[0043] Although the embodiments of the present invention have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the present invention. The scope of the present invention is defined by the appended embodiments and their equivalents.

Claims

1. A method for testing the read and write reliability of a non-volatile memory, comprising: Obtaining the operating environment parameters and operating intensity parameters of the target memory to obtain an environmental information item and an intensity information item; Characterized in that: Dividing the environmental information item and the intensity information item into at least two environmental stage items and at least two intensity stage items to obtain an environmental stage set and an intensity stage set; Based on the combination result of the environmental stage set and the intensity stage set, obtaining a test environment set for the target memory, the test environment set including at least four test environment items formed by the mutual combination of two environmental stage items and two intensity stage items; Setting test information, the test information including the test data volume, testing the read and write performance of the target memory based on the test environment item to obtain a first test information set, the first test information set including at least first test information items corresponding to the four test environment items, and obtaining the true performance of the target memory under different working environments; Setting a maximum cut-off value based on the test information, the maximum cut-off value being a fixed value, cutting the test data into copies based on the maximum cut-off value to obtain a cut test set, the cut test set including at least one cut test item composed of different cut copies; Based on the test environment item, obtaining the write and read speeds of the cut test item through an acquisition method, and then obtaining the write speed and read speed corresponding to the cut test item to obtain a cut write set and a cut read set; Based on the cut write item and the cut read item, comparing with the first test information item under the corresponding test environment item through a comparison method to obtain the interference data caused by the capacitive coupling effect of the storage unit, thereby realizing the judgment of the capacitive coupling effect interference of adjacent units in the memory.

2. The read / write reliability test method for a non-volatile memory according to claim 1, characterized in that: The operating environment parameters include temperature and voltage fluctuations, the operating intensity parameters include read and write frequencies and network supply, and the acquisition methods of the environmental information item and the intensity information item include: Setting an acquisition period, the acquisition period being a fixed cycle, based on the acquisition period, obtaining the working limit temperature information of the target memory to obtain a temperature extremely high item and a temperature extremely low item, and at the same time obtaining the voltage limit information to obtain a voltage extremely high value and a voltage extremely low value, thereby obtaining the environmental information item; Based on the acquisition period, obtaining the read and write gap information of the target memory and the network supply information matching the read and write gap information to obtain a read and write gap set and a network matching set, the read and write gap set including at least two read and write gap items, and the network matching set including at least two network matching items corresponding to the read and write gap items, thereby obtaining the intensity information item.

3. The read / write reliability test method for a non-volatile memory according to claim 2, wherein: The acquisition method of the environmental stage set includes: Obtaining the difference between the temperature extremely high item and the temperature extremely low item and the difference between the voltage extremely high value and the voltage extremely low value to obtain a temperature difference item and a voltage difference item, and obtaining the intermediate value information of the temperature difference item and the voltage difference item to obtain a temperature median item and a voltage median item; Based on the combination result of the temperature extremely high item, the temperature extremely low item and the temperature median item, obtaining a first temperature range and a second temperature range, and based on the combination result of the voltage extremely high value, the voltage extremely low value and the voltage median item, obtaining a first voltage range and a second voltage range; Obtain the combined results of the first temperature range, the second temperature range, the first voltage range, and the second voltage range to obtain the first combined set. Set the first division interval to divide the first combined set to obtain at least two environmental stage items, and then obtain the environmental stage set.

4. The read / write reliability test method for a non-volatile memory according to claim 2, characterized in that: The method for obtaining the intensity stage set includes: Obtain the average value data of the read-write gap set and the network matching set to obtain the gap average item and the network average item; Based on the gap average item and the network average item, perform divisions respectively to obtain the first gap range, the second gap range, the first network range, and the second network range; Obtain the combined results of the first gap range, the second gap range, the first network range, and the second network range to obtain the second combined set. Set the second division interval to divide the second combined set to obtain at least two intensity stage items, and then obtain the intensity stage set.

5. The read / write reliability test method for a non-volatile memory according to claim 2, characterized in that: The method for setting the test information includes: Based on the acquisition period, obtain the storage data volume information of the target memory to obtain the storage information set; Based on the storage information set, obtain the data maximum value of the storage data volume information, and use the data maximum value as the test data volume, and then obtain the test information.

6. The read / write reliability test method for a non-volatile memory according to claim 1, characterized in that: The method for obtaining the first test information set includes: Based on the test environment set, sort the test environment items in the test environment set to obtain the sorted test set; Based on the test information, perform read-write performance tests on the target memory in sequence according to the sorted test set to obtain the write rate set and the read rate set. The write rate set and the read rate set include at least four write rate items and read rate items corresponding to the test environment items. The write rate set and the read rate set are combined to obtain the first test information set.

7. A read / write reliability test method for a non-volatile memory according to claim 1, characterized in that: The method for obtaining the cutting test set includes: Based on the fixed value corresponding to the maximum cutting value, obtain at least one cutting comparison item in ascending integer order. The cutting comparison item is a fixed value; Based on the cutting comparison item, perform equal division cutting on the test data respectively to obtain at least one cutting test item. The cutting test items are combined to obtain the cutting test set.

8. A read / write reliability test method for a non-volatile memory according to claim 1, characterized in that: The obtaining method includes: S1: Individually write the cut test information according to the number of cutting portions in the cutting test item to obtain the write speed set, and obtain the read speed after the test information is completely written to obtain the read speed item; S2: Obtain the average rate of the write speed set to obtain the write speed item. Based on the write speed item and the read speed item, obtain the write speed and the read speed corresponding to the cutting test item; Based on the cutting test set, repeat steps S1 - S2 to sequentially obtain the write speed and the read speed corresponding to the cutting test item to obtain the cutting write set and the cutting read set.

9. A read / write reliability test method for a non-volatile memory according to claim 1, characterized in that: The comparison method includes: Based on the first test information item, distinguish the test environment items, and respectively obtain the write rate and the read rate corresponding to the test environment items in the first test information item to obtain the first comparison item; Based on the cutting write set and the cutting read set, respectively obtain the write rate and the read rate corresponding to the test environment items in the cutting write set and the cutting read set to obtain the second comparison item; Compare the difference in write rate and the difference in read rate between the first comparison item and the second comparison item, set a fluctuation threshold, and determine whether the difference in write rate and the difference in read rate exceed the fluctuation threshold. Furthermore, obtain the changes in write speed and read speed after cutting data into different numbers of parts in a fixed test environment, and acquire the interference data caused by the capacitive coupling effect of the storage unit, thereby realizing the judgment of the interference of the capacitive coupling effect on adjacent units in the memory.

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