Miniature light-emitting device and manufacturing method thereof

Abstract

The invention relates to a miniature light-emitting device and a manufacturing method thereof, and the device comprises a light-emitting structure which is provided with at least one light-emitting region; the extinction structure is arranged on the light-emitting side of the light-emitting structure and provided with at least one light-transmitting area corresponding to the at least one light-emitting area, and light emitted by the light-emitting structure in the light-emitting area is emitted out through the corresponding light-transmitting area; each color filtering unit is arranged in the light-transmitting area corresponding to the corresponding light-emitting area, and is configured to transmit the light of the target color and reduce the light of the non-target color in the light emitted by the light-emitting structure in the corresponding light-emitting area; the at least one light condensation unit is arranged on the light emitting side of the light emitting structure, at least covers the at least one color filtering unit and is arranged corresponding to the at least one light transmitting area, and the light condensation unit is configured to converge light emitted from the corresponding light transmitting area, so that light crosstalk between pixels can be reduced, the color purity is improved, and the display performance of a product is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor light-emitting technologies, and particularly to a micro light-emitting device and a manufacturing method thereof.

Background Art

[0002] For terminal electronic devices, especially head-mounted AR (Augmented Reality) / VR (Virtual Reality) near-eye display devices, high definition is a key display feature that affects consumers' visual experience. As the main display component of near-eye display devices, the micro-display module. Therefore, developing a micro-display module with high brightness, high resolution, and low crosstalk is an important topic.

[0003] Currently, the mainstream technologies of micro-display modules include pixel light-emitting technologies represented by Micro LED (Micro Light Emitting Diode) and Micro OLED (Micro Organic Light Emitting Diode). Among them, the Micro LED micro-display module has extremely high research and application value due to its subversive advantages such as high brightness, high resolution, low power consumption, long lifespan, and lightweight.

[0004] However, in order to achieve a Micro LED micro-display module with high definition and a wide color gamut, it is necessary to have a high module brightness, high pixel density, and high color purity that are adapted to it. However, as the pixel density continues to increase, the problems of light crosstalk between pixels and insufficient color purity have become the key bottlenecks affecting the display characteristics of high resolution and wide color gamut.

Summary of the Invention

[0005] Embodiments of this application provide a micro light-emitting device and a manufacturing method thereof to improve the problems of light crosstalk between pixels and insufficient color purity of the Micro LED micro-display module.

[0006] To solve the above problems, an embodiment of the present application provides a micro light-emitting device, which includes: a light-emitting structure having at least one light-emitting region; an extinction structure provided on the light-emitting side of the light-emitting structure and having at least one light-transmitting region, the at least one light-transmitting region being respectively arranged corresponding to the at least one light-emitting region, and light emitted by the light-emitting structure in each light-emitting region being emitted through its corresponding light-transmitting region; at least one color filtering unit, each color filtering unit corresponding to a light-emitting region and being provided in the light-transmitting region corresponding to its corresponding light-emitting region, and each color filtering unit being configured to transmit light of a target color and reduce light of non-target colors in the light emitted by the light-emitting structure in its corresponding light-emitting region; and at least one light condensing unit provided on the light-emitting side of the light-emitting structure and at least covering the at least one color filtering unit, the at least one light condensing unit being respectively arranged corresponding to the at least one light-transmitting region, and each light condensing unit being configured to converge the light emitted through its corresponding light-transmitting region.

[0007] Wherein, the color filtering unit includes a transmission-reflection layer, and the transmission-reflection layer of the color filtering unit is configured to: transmit light of a target color and reflect light of non-target colors; the transmission-reflection layer includes multiple refractive material layers stacked in sequence in a direction away from the light-emitting structure, and adjacent two refractive material layers have different refractive indices.

[0008] Wherein, the transmission-reflection layer is a stacked structure formed by alternately stacking multiple first refractive material layers and multiple second refractive material layers in a direction away from the light-emitting structure, wherein the first refractive material layer and the second refractive material layer have different refractive indices.

[0009] Wherein, the color filtering unit includes a color conversion layer, and the color conversion layer of the color filtering unit is configured to: transmit light of a target color and convert light of non-target colors into light of the target color.

[0010] Wherein, the number of light-emitting regions is multiple, and the light-emitting colors of the light-emitting structures in the multiple light-emitting regions are all initial colors; the number of color filtering units is multiple, and the multiple color filtering units include at least one first color filtering unit and at least one second color filtering unit; wherein, the color conversion layer of each first color filtering unit is configured to: transmit light of a first target color and convert light of the initial color into light of the first target color, and the initial color is different from the first target color; the color conversion layer of each second color filtering unit is configured to: transmit light of a second target color and convert light of the initial color into light of the second target color, and the initial color is different from the second target color.

[0011] Among them, the color filtering unit further includes a color filtering layer. In the color filtering unit, the color conversion layer and the color filtering layer of the color filtering unit are sequentially stacked in a direction away from the light-emitting structure. The color filtering layer of the color filtering unit is configured to: transmit light of a target color and reflect or absorb light of a non-target color.

[0012] Among them, the color filtering unit includes a color absorption layer. The color absorption layer of the color filtering unit is configured to: transmit light of a target color and absorb light of a non-target color.

[0013] Among them, the light extinction structure further has a light blocking region provided around each light transmissive region; the micro light-emitting device further includes: a reflective layer that at least covers the side wall surface of the light extinction structure within the light blocking region, and the orthographic projection of at least one light condensing unit on the light-emitting structure covers the orthographic projection of the reflective layer covered on the side wall surface of the light extinction structure within the light blocking region on the light-emitting structure.

[0014] Among them, the micro light-emitting device further includes: a planar layer provided on the light-emitting side of the light-emitting structure and at least covering the light condensing unit. The refractive index of the planar layer is less than that of the light condensing unit, and the surface of the planar layer facing away from the light-emitting structure and the light condensing unit is a flat surface.

[0015] Among them, the light-emitting structure further has a non-light-emitting region provided around each light-emitting region, and includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first electrode, and a second electrode; among them, the light-emitting layer and the second semiconductor layer are located within the light-emitting region and are sequentially stacked on one side of the first semiconductor layer, and the light extinction structure, the color filtering unit, and the light condensing unit are located on the side of the first semiconductor layer facing away from the light-emitting layer; the first electrode is located within the light-emitting region and is provided on the side of the second semiconductor layer facing away from the light-emitting layer, and the second electrode is located within the non-light-emitting region and is provided on the side of the first semiconductor layer facing away from the light extinction structure, the color filtering unit, and the light condensing unit.

[0016] Among them, the micro light-emitting device further includes: a driving substrate, the light-emitting structure is provided on one side of the driving substrate, and the side of the light-emitting structure facing away from the driving substrate is the light-emitting side of the light-emitting structure.

[0017] To solve the above problems, an embodiment of the present application further provides a method for manufacturing a micro light-emitting device. The method for manufacturing the micro light-emitting device includes: providing a light-emitting structure having at least one light-emitting region; forming an extinction structure on the light-emitting side of the light-emitting structure, the extinction structure having at least one light-transmitting region, and the at least one light-transmitting region is respectively arranged corresponding to the at least one light-emitting region, and the light emitted by the light-emitting structure in each light-emitting region is emitted through its corresponding light-transmitting region; forming at least one color filter unit, each color filter unit corresponding to a light-emitting region and being disposed in the light-transmitting region corresponding to its corresponding light-emitting region, and each color filter unit is configured to transmit light of a target color and reduce the light of non-target colors in the light emitted by the light-emitting structure in its corresponding light-emitting region; forming at least one light condensing unit on the light-emitting side of the light-emitting structure, the at least one light condensing unit at least illuminating at least one color filter unit, being respectively arranged corresponding to the at least one light-transmitting region, and each light condensing unit is configured to converge the light emitted from its corresponding light-transmitting region.

[0018] Wherein, an opening is provided on the side of the extinction structure facing away from the light-emitting structure within the light-transmitting region, and the color filter unit is disposed on the bottom wall surface of the opening of the light-transmitting region corresponding to its corresponding light-emitting region; before forming the at least one color filter unit, the method for manufacturing the micro light-emitting device may further include: forming a reflective layer that at least covers the side wall surface of the opening; and, the orthographic projection of the light condensing unit on the light-emitting structure covers the orthographic projection of the reflective layer covered on the side wall surface of the opening of its corresponding light-transmitting region on the light-emitting structure.

[0019] Wherein, after forming the light condensing structure on the light-emitting side of the light-emitting structure, the method for manufacturing the micro light-emitting device further includes: forming a planar layer on the light-emitting side of the light-emitting structure, the planar layer at least covering the light condensing unit, and the refractive index of the planar layer is less than the refractive index of the light condensing unit, and the surface of the planar layer facing away from the light-emitting structure and the light condensing unit is a flat surface.

[0020] The beneficial effects of the present application are as follows: The micro-light-emitting device and its manufacturing method provided by the present application are such that a light extinction structure, at least one color filtering unit, and at least one light condensing unit are provided on the light-emitting side of the light-emitting structure in the micro-light-emitting device. Among them, the light-emitting structure has at least one light-emitting region, the light extinction structure has at least one light-transmitting region respectively corresponding to the at least one light-emitting region, and the light emitted by the light-emitting structure in each light-emitting region is emitted through its corresponding light-transmitting region. Each color filtering unit corresponds to one light-emitting region and is disposed within the light-transmitting region corresponding to its corresponding light-emitting region, and each color filtering unit is configured to transmit light of a target color and reduce the light of non-target colors in the light emitted by the light-emitting structure in its corresponding light-emitting region. The above at least one light condensing unit at least covers the above at least one color filtering unit and is respectively corresponding to the above at least one light-transmitting region, and each light condensing unit is configured to converge the light emitted from its corresponding light-transmitting region. Thus, it is possible to encapsulate a micro-light-emitting diode chip as the light-emitting structure together with the light extinction structure, at least one color filtering unit, and at least one light condensing unit to form a micro-light-emitting device. And in the micro-light-emitting device, the light extinction structure can absorb the large-angle light emitted by the light-emitting region of the micro-light-emitting diode chip, the color filtering unit can selectively reduce the light of non-target colors in the light emitted by the light-emitting region of the micro-light-emitting diode chip, and the light condensing unit can convert the light with a relatively large viewing angle emitted from the light-transmitting region into light with a relatively small viewing angle. Therefore, it is possible to improve the problem of light crosstalk between pixels of the micro-light-emitting diode chip, improve the color purity of the light emitted by the micro-light-emitting diode chip, and also improve the front-viewing angle brightness of the micro-light-emitting diode chip, which is beneficial to improving the display performance of the Micro LED micro-display module.

Description of the Drawings

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0022] Figure 1 is a top view structural schematic diagram of the micro-light-emitting device provided by the embodiment of the present application;

[0023] Figure 2 is along Figure 1 The cross-sectional structural schematic diagram taken along the section line P-P' in

[0024] Figure 3 is Figure 1 The top view structural schematic diagram of the light-emitting structure in

[0025] Figure 4is taken along Figure 1 Another schematic cross-sectional structure diagram taken along the section line P-P' in

[0026] Figure 5 is taken along Figure 1 Another schematic cross-sectional structure diagram taken along the section line P-P' in

[0027] Figure 6 Another schematic cross-sectional structure diagram of the micro light-emitting device provided by the embodiment of the present application;

[0028] Figure 7 Another schematic cross-sectional structure diagram of the micro light-emitting device provided by the embodiment of the present application;

[0029] Figure 8 Another schematic cross-sectional structure diagram of the micro light-emitting device provided by the embodiment of the present application;

[0030] Figure 9 Another schematic cross-sectional structure diagram of the micro light-emitting device provided by the embodiment of the present application;

[0031] Figure 10 is a schematic flow chart of the manufacturing method of the micro light-emitting device provided by the embodiment of the present application.

Specific Embodiments

[0032] The embodiments of the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be specifically noted that the following embodiments are only used to illustrate the embodiments of the present application, but do not limit the scope of the embodiments of the present application. Similarly, the following embodiments are only some embodiments of the embodiments of the present application rather than all embodiments. All other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of the embodiments of the present application.

[0033] When describing the structure of a component, when a layer or a region is referred to as being "on" or "above" another layer or another region, it may mean directly on the other layer or another region, or there may be other layers or regions between it and the other layer or another region. And if the component is flipped, this layer or region will be "under" or "below" the other layer or another region. In addition, the features, structures or characteristics described below can be combined in any suitable manner in one or more embodiments.

[0034] In addition, the directional terms mentioned in the embodiments of the present application, such as [up], [down], [front], [back], [left], [right], [inside], [outside], [side], etc., are only references to the directions in the attached drawings. Therefore, the directional terms used are for explaining and understanding the embodiments of the present application, rather than for limiting the embodiments of the present application. In each of the drawings, units with similar structures are denoted by the same reference numerals. For the sake of clarity, the various parts in the drawings are not drawn to scale. In addition, some related parts may not be shown in the drawings.

[0035] The following will be described in detail with reference to specific embodiments. It should be noted that the embodiments of the present application can be presented in various forms, and some examples will be described below.

[0036] Please refer to Figures 1 to 3 , Figure 1 which is a top view structural schematic diagram of a micro light-emitting device provided by an embodiment of the present application. Figure 2 is a cross-sectional structural schematic diagram taken along the section line P-P' in Figure 1 , Figure 3 and Figure 1 is a top view structural schematic diagram of the light-emitting structure in Figures 1 to 3 . As shown in

[0037] It can be understood that in the above-mentioned micro-light emitting device 10, the light emitting structure 11 in each light emitting region C1 can correspond to one pixel, and the pixel can be a light emitting diode, for example, specifically a micro-light emitting diode (Micro Light Emitting Diode, Micro-LED). And, for the convenience of understanding and explanation, the viewing angle of the light can be defined as the acute angle between the light and the normal line N1 of the micro-light emitting device 10. Among them, the normal line N1 of the micro-light emitting device 10 is parallel to the thickness direction of the micro-light emitting device 10 (that is, the Z direction in the attached drawing).

[0038] It should be noted that in this embodiment, by directly disposing the above-mentioned extinction structure 12, the above-mentioned at least one color filtering unit 13 and the above-mentioned at least one light condensing unit 14 on the light emitting side of the light emitting structure 11, the light emitting structure 11 is encapsulated with the above-mentioned extinction structure 12, the above-mentioned at least one color filtering unit 13 and the above-mentioned at least one light condensing unit 14 to form the micro-light emitting device 10. And in the micro-light emitting device 10, the extinction structure 12 can absorb the large viewing angle light L0 emitted by the light emitting structure 11 in each light emitting region C1. Each color filtering unit 13 can selectively reduce the non-target color light in the first light L1 incident on the position of the light transmissive region 12A emitted by the light emitting structure 11 in its corresponding light emitting region C1. Each light condensing unit 14 can convert the second light L2 with a relatively large viewing angle emitted from its corresponding light transmissive region 12A into the third light L3 with a relatively small viewing angle. Therefore, it can improve the light crosstalk problem between the pixels of the micro-light emitting diode chip, improve the color purity of the light emitted by the micro-light emitting diode chip, and also improve the positive viewing angle brightness of the micro-light emitting diode chip, which is beneficial to realizing the high resolution and wide color gamut of the Micro LED micro display module, so that it can better meet the requirements of high-definition and wide-color gamut display image quality.

[0039] In this embodiment, as Figure 2 shown, in the above-mentioned micro-light emitting device 10, the number of the light transmissive regions 12A can be equal to the number of the light emitting regions C1, and the light transmissive regions 12A and the light emitting regions C1 can correspond one by one. Specifically, the light transmissive region 12A can be located directly above its corresponding light emitting region C1, and the positive projection of the light transmissive region 12A on the light emitting structure 11 can completely cover its corresponding light emitting region C1.

[0040] Specifically, as Figure 2As shown, the above-mentioned light extinction structure 12 may further have a light blocking region 12B disposed around each light transmissive region 12A. Moreover, during the use of the above-mentioned micro light-emitting device 10, among the light rays emitted by the light-emitting structure 11 in each light-emitting region C1, the first light ray L1 incident on the position of its corresponding light transmissive region 12A will emit from its corresponding light transmissive region 12A, and the large-angle light ray L0 incident on the position of the light blocking region 12B among the light rays emitted by the light-emitting structure 11 in each light-emitting region C1 will be absorbed by the light blocking region 12B. Thus, when the micro light-emitting device 10 is applied to the display field, the light crosstalk phenomenon between pixels can be significantly reduced, improving the display effect of the corresponding product (such as a display terminal device).

[0041] It should be noted that this embodiment does not limit the specific structure and material of the light extinction structure 12. It is only required that the first light ray L1 emitted by the light-emitting structure 11 in the above-mentioned at least one light-emitting region C1 can respectively emit from the above-mentioned at least one light transmissive region 12A, and the large-angle light ray L0 emitted by the light-emitting structure 11 in the above-mentioned at least one light-emitting region C1 can be absorbed by the light blocking region 12B.

[0042] In some embodiments, as Figure 2 shown, an opening 121 may be provided on the side of the light extinction structure 12 facing away from the light-emitting structure 11 in each light transmissive region 12A. Each color filtering unit 12 may be disposed on the bottom wall surface 121B of the opening 121 of the light transmissive region 12A corresponding to its corresponding light-emitting region C1, and each light condensing unit 14 may at least partially fill the opening 121 of its corresponding light transmissive region 12A.

[0043] Specifically, as Figure 2 shown, the opening 121 of each light transmissive region 12A may penetrate the light extinction structure 12, so that the bottom wall surface 121B of the opening 121 is provided by the light-emitting side surface of the light-emitting structure 11, ensuring that the first light ray L1 emitted by the light-emitting structure 11 in the light-emitting region C1 can enter its corresponding opening 121 without obstruction.

[0044] Specifically, as Figure 2 shown, the orthographic projection of the bottom wall surface 121B of the opening 121 of each light transmissive region 12A on the light-emitting structure 11 may completely cover its corresponding light-emitting region C1, so that the first light ray L1 emitted by the light-emitting structure 11 in the light-emitting region C1 can emit from the light transmissive region 12A as much as possible, thereby improving the light extraction efficiency of the above-mentioned micro light-emitting device 10.

[0045] Moreover, during specific implementation, as Figure 2As shown, the above-mentioned light extinction structure 12 may specifically be a light extinction material layer 12. On the side of the light extinction material layer 12 facing away from the light-emitting structure 11, at least one opening 121 may be provided. The at least one opening 121 is respectively arranged in one-to-one correspondence with the at least one light-emitting region C1. And the region where each opening 121 of the light extinction material layer 12 is located is a light-transmitting region 12A as mentioned above, and the remaining region of the light extinction material layer 12 except for the region where the at least one opening 121 is located is the light-blocking region 12B.

[0046] In some examples, the material of the above-mentioned light extinction structure 12 or the light extinction material layer 12 may be a high light extinction material such as black glue.

[0047] In some specific embodiments, as Figure 2 shown, the angle between the side wall surface 121A and the bottom wall surface 121B of the above-mentioned opening 121 may be greater than or equal to 90 degrees. The side wall surface 121A of the above-mentioned opening 121 may be a plane (as Figure 2 shown), or may be a concave surface (as Figure 4 shown), or may be a convex surface (as Figure 5 shown). And it should be noted that in the above-mentioned micro light-emitting device 10, the specific shape of the side wall surface 121A of each opening 121 included in the light extinction structure 12 or the light extinction material layer 12 may be set according to actual needs, and this case does not make any limitations in this regard.

[0048] In this embodiment, as Figure 3 shown, the number of light-emitting regions C1 of the above-mentioned light-emitting structure 11 may be multiple. The multiple light-emitting regions C1 are arranged at intervals. Specifically, the multiple light-emitting regions C1 may be arranged in an array to form a light-emitting region array. And the above-mentioned light-emitting structure 11 may also have a non-light-emitting region C2. The non-light-emitting region C2 may include an interval region C21 and a peripheral region C22. Among them, the interval region C21 is the interval region between the multiple light-emitting regions C1, which is used to separate each light-emitting region C1 from other light-emitting regions C1 located around it, and the peripheral region C22 is the peripheral region of the multiple light-emitting regions C1, which is used to set the common electrode of the pixel.

[0049] In some embodiments, as Figure 2 , Figure 4 and Figure 5 shown, the number of light-emitting regions C1 of the above-mentioned light-emitting structure 11 is multiple, and the multiple light-emitting regions C1 may include at least one first light-emitting region CR, at least one second light-emitting region CG, and at least one third light-emitting region CB.

[0050] Correspondingly, as Figure 2 , Figure 4 and Figure 5As shown, in the above-mentioned micro light-emitting device 10, the number of color filter units 13 can also be multiple, and the multiple color filter units 13 can include at least one first color filter unit 13A and at least one second color filter unit 13B. Among them, the at least one first color filter unit 13A corresponds to the at least one first light-emitting region CR one by one, and the at least one second color filter unit 13B corresponds to the at least one second light-emitting region CG one by one.

[0051] In this embodiment, as Figure 2 、 Figure 4 and Figure 5 shown, in the above-mentioned micro light-emitting device 10, each color filter unit 13 can be located directly above its corresponding light-emitting region C1. The orthographic projection of each color filter unit 13 on the light-emitting structure 11 can completely cover its corresponding light-emitting region C1. Each color filter unit 13 can selectively reduce the non-target color light in the first light L1 emitted by the light-emitting structure 11 in its corresponding light-emitting region C1. Among them, the non-target color light can refer to the light that is not desired to be emitted from the light-transmitting region 12A. For example, red light, green light, blue light, ultraviolet light, etc. Thus, when the above-mentioned micro light-emitting device 10 is applied to the full-color display field, through the function of the color filter unit 13 to selectively transmit and / or spectral narrow the light emitted from different color pixels, the problems of blue light leakage and insufficient spectral color purity existing in the color conversion process of the full-color display module can be improved.

[0052] In some embodiments, as Figure 2 、 Figure 4 and Figure 5 shown, each color filter unit 13 can include a transmissive and reflective layer 131. The transmissive and reflective layer 131 of each color filter unit 13 can be configured to: transmit the light of the target color and reflect the light of the non-target color.

[0053] Specifically, for each color filter unit 13, the light-emitting color of the light-emitting structure 11 in the light-emitting region C1 corresponding to the color filter unit 13 can be the target color (for example, red, green, or blue), and the other light (i.e., non-target color light) other than the light of the target color that may exist in the light emitted by the light-emitting structure 11 in the light-emitting region C1 corresponding to the color filter unit 13 will be reflected by the transmissive and reflective layer 131 of the color filter unit 13 during the process of passing through the transmissive and reflective layer 131 of the color filter unit 13 and cannot pass through the transmissive and reflective layer 131 of the color filter unit 13 to be emitted. Thus, the transmissive and reflective layer 131 of the color filter unit 13 plays a role in filtering the light of the target color emitted by the light-emitting structure 11 in its corresponding light-emitting region C1, and thus can improve the color purity of the light emitted by the light-emitting structure 11 in its corresponding light-emitting region C1.

[0054] In some specific embodiments, the above-mentioned transmissive reflective layer 131 may include multiple layers of refractive material layers sequentially stacked in a direction away from the light-emitting structure 11, and adjacent two refractive material layers may have different refractive indices. Moreover, during specific implementation, a stacked structure can be obtained as the above-mentioned transmissive reflective layer 131 by using organic or inorganic materials with refractive index differences to form a stacked structure. Additionally, by designing parameters such as the number and thickness of the stacked layers in this stacked structure and the refractive indices of the materials of each layer, the adjustment of the central wavelength and bandwidth of the transmissible spectrum of this stacked structure can be achieved. Exemplarily, the above-mentioned transmissive reflective layer may specifically be a stacked structure formed by alternately stacking multiple first refractive material layers and multiple second refractive material layers in a direction away from the light-emitting structure 11, wherein the first refractive material layer and the second refractive material layer have different refractive indices, and by designing the thickness and number of layers of the first refractive material layer and the second refractive material layer in this stacked structure, the adjustment of the central wavelength and bandwidth of the transmissible spectrum of this stacked structure can be achieved.

[0055] Moreover, in the above-mentioned embodiments where the multiple light-emitting regions C1 include at least one first light-emitting region CR, at least one second light-emitting region CG, and at least one third light-emitting region CB, and the above-mentioned multiple color filter units 13 may include at least one first color filter unit 13A and at least one second color filter unit 13B, as Figure 2 , Figure 4 and Figure 5 shown, the light-emitting color of the light-emitting structure 11 in the first light-emitting region CR may be a first target color, the light-emitting color of the light-emitting structure 11 in the second light-emitting region CG may be a second target color, the light-emitting color of the light-emitting structure 11 in the third light-emitting region CB may be a third target color, and the light of the first target color, the light of the second target color, and the light of the third target color are used to synthesize white light. Exemplarily, the first target color may be red, the second target color may be green, and the third target color may be blue. Specifically, as Figure 2 , Figure 4 and Figure 5As shown, the multiple color filter units 13 may further include at least one third color filter unit 13C, and the at least one third color filter unit 13C corresponds to the at least one third light-emitting region CB one by one. Moreover, the transmissive and reflective layer 131 included in each first color filter unit 13A may be specifically configured to transmit light of a first target color and reflect light of non-first target colors (such as a second target color and a third target color). The transmissive and reflective layer 131 included in each second color filter unit 13B may be specifically configured to transmit light of a second target color and reflect light of non-second target colors (such as a first target color and a third target color). The transmissive and reflective layer 131 included in each third color filter unit 13C may be specifically configured to transmit light of a third target color and reflect light of non-third target colors (such as a first target color and a third target color).

[0056] In this way, by selectively transmitting the light emitted from different color pixels through the transmissive and reflective layers 131 of different color filter units 13A / 13B / 13C, the problems of blue light leakage and insufficient spectral color purity existing in the color conversion process of the full-color display module can be improved.

[0057] In some embodiments, as Figure 2 、 Figure 4 and Figure 5 shown, each color filter unit 13 may include a color conversion layer 132, and the color conversion layer 132 of each color filter unit 13 may be configured to transmit light of a target color and convert light of non-target colors into light of the target color.

[0058] Specifically, for each color filter unit 13, the light-emitting color of the light-emitting structure 11 in the light-emitting region C1 corresponding to the color filter unit 13 may be a non-target color (i.e., other colors different from the target color), and the light of the non-target color emitted by the light-emitting structure 11 in the light-emitting region C1 corresponding to the color filter unit 13 will be converted into light of the target color (such as red light, green light, or blue light) by the color conversion layer 132 of the color filter unit 13 during the process of passing through the color conversion layer 132 of the color filter unit 13. Thus, on the basis of realizing the full-color display of the above-mentioned micro light-emitting device 10, the problem of blue light leakage existing in the color conversion process of the full-color display module can be effectively improved.

[0059] Exemplarily, the material of the color conversion layer 132 may include color conversion materials such as quantum dots and / or phosphors.

[0060] Moreover, in the above-described embodiment in which the plurality of light-emitting regions C1 include at least one first light-emitting region CR, at least one second light-emitting region CG, and at least one third light-emitting region CB, and the plurality of color filter units 13 may include at least one first color filter unit 13A and at least one second color filter unit 13B, as Figure 2 , Figure 4 and Figure 5 shown, the light-emitting colors of the light-emitting structures 11 in the plurality of light-emitting regions C1 may be the same and may all be the initial color. Exemplarily, the light emitted by the light-emitting structures 11 in the plurality of light-emitting regions C1 may all be blue light or ultraviolet light, that is, the initial color may be blue or colorless. Specifically, the color conversion layer 132 included in each first color filter unit 13A may be specifically configured to: transmit light of a first target color and convert the light of the initial color into light of the first target color, and the initial color is different from the first target color. The color conversion layer 132 included in each second color filter unit 13B may be specifically configured to: transmit light of a second target color and convert the light of the initial color into light of a fifth target color, and the initial color is different from the second target color.

[0061] In some examples, the light of the initial color, the light of the first target color, and the light of the second target color can be combined to form white light. Exemplarily, the initial color may be blue, the first target color may be red, and the second target color may be green.

[0062] In other examples, as Figure 2 , Figure 4 and Figure 5 shown, the plurality of color filter units 13 may further include at least one third color filter unit 13C, and the at least one third color filter unit 13C corresponds to the at least one third light-emitting region CB one by one. Moreover, the color conversion layer 132 included in each third color filter unit 13B may be specifically configured to: transmit light of a third target color and convert the light of the initial color into light of the third target color, and the initial color is different from the third target color, and the light of the third target color, the light of the first target color, and the light of the second target color can be combined to form white light. Exemplarily, the light of the initial color may be ultraviolet light, the light of the first target color may be red light, the light of the second target color may be green light, and the light of the third target color may be blue light.

[0063] Thus, by using the color conversion layers 132 of different color filter units 13A / 13B / 13C to convert the outgoing light of the same color pixels into outgoing light of multiple different colors, not only can the full-color display of the above-mentioned micro light-emitting device 10 be achieved, but also the problems of blue light leakage and insufficient spectral color purity existing in the color conversion process of the full-color display module can be effectively improved.

[0064] In some embodiments, such as Figure 2 、 Figure 4 and Figure 5 shown, each color filter unit 13 may include a color absorption layer 133, and the color absorption layer 133 of each color filter unit 13 may be configured to: transmit light of the target color and absorb light of non-target colors.

[0065] Specifically, for each color filter unit 13, the emission color of the light-emitting structure 11 in the light-emitting region C1 corresponding to the color filter unit 13 may be the target color (for example, red, green, or blue), and other light (i.e., non-target color light) other than the light of the target color that may exist in the light emitted by the light-emitting structure 11 in the light-emitting region C1 corresponding to the color filter unit 13 will be absorbed by the color absorption layer 133 of the color filter unit 13 during the process of passing through the color absorption layer 133 of the color filter unit 13 and cannot be emitted through the color absorption layer 133 of the color filter unit 13, so that the color absorption layer 133 of the color filter unit 13 plays a role in filtering the light of the target color emitted by the light-emitting structure 11 in its corresponding light-emitting region C1, and thus can improve the color purity of the light emitted by the light-emitting structure 11 in its corresponding light-emitting region C1.

[0066] Exemplarily, the material of the color absorption layer 133 may be a color filter material such as colored ink.

[0067] Moreover, in the above embodiments where the multiple light-emitting regions C1 include at least one first light-emitting region CR, at least one second light-emitting region CG, and at least one third light-emitting region CB, and the multiple color filter units 13 may include at least one first color filter unit 13A and at least one second color filter unit 13B, such as Figure 2 、 Figure 4 and Figure 5As shown, the emission color of the light-emitting structure 11 in the first light-emitting region CR may be the first target color, the emission color of the light-emitting structure 11 in the second light-emitting region CG may be the second target color, and the emission color of the light-emitting structure 11 in the third light-emitting region CB may be the third target color. Moreover, the light of the first target color, the light of the second target color, and the light of the third target color are used to synthesize white light. Exemplarily, the first target color may be red, the second target color may be green, and the third target color may be blue. Specifically, as Figure 2 , Figure 4 and Figure 5 shown, the multiple color filter units 13 may further include at least one third color filter unit 13C, and the at least one third color filter unit 13C corresponds to the at least one third light-emitting region CB one by one. Also, the color absorption layer 133 included in each first color filter unit 13A may be specifically configured to transmit the light of the first target color and absorb the light of non-first target colors (such as the second target color and the third target color). The color absorption layer 133 included in each second color filter unit 13B may be specifically configured to transmit the light of the second target color and absorb the light of non-second target colors (such as the first target color and the third target color). The color absorption layer 133 included in each third color filter unit 13C may be specifically configured to transmit the light of the third target color and absorb the light of non-first target colors (such as the first target color and the third target color).

[0068] In this way, by selectively transmitting the light emitted from different color pixels through the color absorption layers 133 of different color filter units 13A / 13B / 13C, the problems of blue light leakage and insufficient spectral color purity existing in the color conversion process of the full-color display module can be improved.

[0069] In some specific embodiments, as Figure 6 shown, each color filter unit 13 (such as the above-mentioned first color filter unit 13A, the above-mentioned second color filter unit 13B, and the above-mentioned third color filter unit 13C) may include both the above-mentioned color conversion layer 132 and the color filtering layer 131 / 133. Moreover, in each color filter unit 13, the color conversion layer 132 and the color filtering layer 131 / 133 may be sequentially stacked in a direction away from the light-emitting structure 11, and the color filtering layer 131 / 133 is configured to transmit the light of the target color and reflect or absorb the light of non-target colors. Among them, the color filtering layer 131 / 133 may be specifically the above-mentioned transmissive and reflective layer 131 or the above-mentioned color absorption layer 133.

[0070] Specifically, the emission colors of the light-emitting structures 11 within the multiple light-emitting regions C1 described above can be the same and can all be the initial colors. Moreover, for each color filtering unit 13, at least part of the light of the initial color emitted by the light-emitting structures 11 within the light-emitting region C1 corresponding to the color filtering unit 13 is converted into light of the target color by the color conversion layer 132 included in the color filtering unit 13 during the process of passing through the color filtering unit 13. The remaining part can be reflected or absorbed by the color filtering layer 131 / 133 included in the color filtering unit 13 after passing through the color conversion layer 132 included in the color filtering unit 13, and the reflected light can be further converted into light of the target color by the color conversion layer 132 included in the color filtering unit 13 after being incident on the color conversion layer 132 included in the color filtering unit 13. Thus, not only can the color purity of the light emitted by the above-mentioned micro light-emitting device 10 be further improved, but also the light-emitting efficiency of the above-mentioned micro light-emitting device 10 can be improved.

[0071] In the above embodiment, as Figures 1 to 2 and Figures 4 to 6 shown, in the above-mentioned micro light-emitting device 10, the number of the light condensing units 14 can be equal to the number of the light-transmitting regions 12A, and the light condensing units 14 and the light-transmitting regions 12A can be in one-to-one correspondence. Moreover, during the use of the above-mentioned micro light-emitting device 10, each light condensing unit 14 can deflect at least part of the light rays in the second light rays L2 emitted from its corresponding light-transmitting region 12A towards the direction close to the normal line N1 of the micro light-emitting device 10, so as to reduce the light-emitting viewing angle of the micro light-emitting device 10 and improve the positive viewing angle brightness of the micro light-emitting device 10. Thus, it is beneficial to reduce the problem of light crosstalk between pixels and can improve the display performance of the Micro LED micro display module.

[0072] Specifically, each light condensing unit 14 can completely cover its corresponding light-transmitting region 12A, so that all the light rays passing through its corresponding light-transmitting region 12A can be incident on the corresponding light condensing unit 14 to improve the light-emitting efficiency of the micro light-emitting device 10.

[0073] Moreover, in the above embodiment where the extinction structure 12 is provided with an opening 121 on the side facing away from the light-emitting structure 11 within each light-transmitting region 12A, as Figure 2 and Figures 4 to 6 shown, each light condensing unit 14 can be partially filled in the opening 121 of its corresponding light-transmitting region 12A. In this way, since the formation of the opening 121 can accurately correspond to the light-emitting region C1, accurate alignment between the light condensing unit 14 and the light-emitting region C1 can be achieved. In addition, movement of the light condensing unit 14 can be avoided.

[0074] It should be noted that the specific structure and material of the light condensing unit 14 are not limited in this embodiment. The light condensing unit 14 only needs to be able to convert the light with a relatively large viewing angle emitted from its corresponding light transmitting area 12A into light with a relatively small viewing angle. In some examples, such as Figure 2 as shown, the light condensing unit 14 can be an optical lens. For example, it can specifically be a convex lens.

[0075] In the above embodiment, such as Figure 7 as shown, the above-mentioned micro light emitting device 10 may further include a reflective layer 15. Specifically, the reflective layer 15 can at least cover the side wall surface of the light extinction structure 12 in the light blocking area 12B and is configured to reflect the light incident on the side wall surface of the light extinction structure 12 in the light blocking area 12B, so as to achieve the effect of improving the light extraction efficiency. Moreover, the orthographic projection of at least one of the above-mentioned light condensing units 14 on the light emitting structure 11 can cover the orthographic projection of the reflective layer 15 covered on the side wall surface of the light extinction structure 12 in the light blocking area 12B on the light emitting structure 11. Thus, during the use of the above-mentioned micro light emitting device 10, it is ensured that for the fourth light ray L4 emitted by the light emitting structure 11 in each light emitting area C1 and incident on the interface between the light condensing unit 14 and the reflective layer 15, after being reflected by the interface between the light condensing unit 14 and the reflective layer 15, the reflected light L5 can be emitted from the light condensing unit 14 to achieve the light condensing effect of the light condensing unit 14 on the reflected light L5 of the reflective layer 15 covered on the side wall surface of the light extinction structure 12 in the light blocking area 12B.

[0076] Specifically, in the above embodiment where an opening 121 is provided on the side of the light extinction structure 12 away from the light emitting structure 11 in each light transmitting area 12A, such as Figure 7 as shown, the above-mentioned reflective layer 15 can at least cover the side wall surface 121A of the opening 121 in each light transmitting area 12A and is configured to reflect the light incident on the side wall surface 121A of the opening 121, so as to achieve the effect of improving the light extraction efficiency.

[0077] Moreover, the orthographic projection of each light condensing unit 14 on the light emitting structure 11 can completely cover the orthographic projection of the reflective layer 15 covered on the side wall surface 121A of the opening 121 in its corresponding light transmitting area 12A on the light emitting structure 11. Thus, during the use of the above-mentioned micro light emitting device 10, it is ensured that for the fourth light ray L4 emitted by the light emitting structure 11 in each light emitting area C1 and incident on the interface between the light condensing unit 14 and the reflective layer 15, after being reflected by the interface between the light condensing unit 14 and the reflective layer 15, the reflected light L5 can be emitted from the light condensing unit 14 to achieve the light condensing effect of the light condensing unit 14 on the reflected light L5 of the reflective layer 15 covered on the side wall surface 121A of the opening 121.

[0078] In some specific embodiments, such as Figure 7As shown, the above-mentioned reflective layer 15 may be a patterned reflective layer 15A. The patterned reflective layer 15A covers at least part of the side wall surface 121A of the opening 121 of each light-transmitting region 12A, exposes at least part of the bottom wall surface 121B of the opening 121 of each light-transmitting region 12A, and may also cover other regions of the surface of the light extinction structure 12 facing away from the light-emitting structure 11 except the region where the opening 121 is located. In some examples, the refractive index of the above-mentioned patterned reflective layer 15A may be less than the refractive index of the above-mentioned light condensing unit 14. Exemplarily, the material of the above-mentioned patterned reflective layer 15A may be a low-extinction and low-refractive-index material such as silicon oxide or low-refractive-index glue. In some other examples, the material of the above-mentioned patterned reflective layer 15A may be a metal material. Exemplarily, the material of the above-mentioned patterned reflective layer 15A may be a highly reflective metal material such as silver, aluminum, magnesium, or a mixture thereof. In still some other examples, the above-mentioned patterned reflective layer 15A may specifically be an anti-reflection film.

[0079] In some other specific embodiments, as Figure 8 shown, the above-mentioned reflective layer 15 may be a full-surface reflective layer 15B. The full-surface reflective layer 15 adheres to the side wall surface 121A and the bottom wall surface 121B of the opening 121 and other regions of the surface of the light extinction structure 12 facing away from the light-emitting structure 11 except the region where the opening 121 is located. That is, the above-mentioned full-surface reflective layer 15 may cover both the side wall surface 121A and the bottom wall surface 121B of the opening 121, and may also cover other regions of the surface of the light extinction structure 12 facing away from the light-emitting structure 11 except the region where the opening 121 is located. In this way, the full-surface reflective layer 15A can be prepared by a full-surface coating process, which simplifies the process and is beneficial to reducing production costs.

[0080] Moreover, it should be noted that the material for preparing the above-mentioned full-surface reflective layer 15B needs to have low extinction coefficient and low refractive index characteristics to reduce the influence of the reflective layer 15B on the light emitted from the bottom wall surface 121B of the opening 121 on the light extraction efficiency. Specifically, the refractive index of the above-mentioned full-surface reflective layer 15B may be less than the refractive index of the light condensing unit 14, so that total reflection is formed at the interface between the above-mentioned full-surface reflective layer 15B and the light condensing unit 14, which is helpful for the utilization of large-angle emitted light. In some examples, the material of the above-mentioned full-surface reflective layer 15B may include low-extinction and low-refractive-index materials such as silicon oxide or low-refractive-index glue.

[0081] In the above embodiment, as Figure 7 and Figure 8 shown, the above-mentioned micro light-emitting device 10 may further include a planarizing layer 16. The planarizing layer 16 is disposed on the light-emitting side of the light-emitting structure 11 and covers at least the above-mentioned light condensing unit 14. In some examples, as Figure 7 and Figure 8As shown, the flat layer 16 can also cover the above-mentioned light extinction structure 12 and the above-mentioned reflective layer 15.

[0082] Specifically, after the first light ray L1 emitted by the light-emitting structure 11 in the light-emitting region C1 enters the light condensing unit 14 through the light-transmitting region 12A, it can be refracted in the direction close to the normal line N1 of the micro light-emitting device 10 at the interface between the light condensing unit 14 and the flat layer 16, so as to achieve the effect of narrowing the light-emitting viewing angle range.

[0083] It should be noted that this embodiment does not limit the specific shape of the interface between the light condensing unit 14 and the flat layer 16, and this interface can refract the light rays with a relatively large viewing angle emitted from the light-transmitting region 12A into light rays with a relatively small viewing angle. In some examples, the interface between the light condensing unit 14 and the flat layer 16 can include at least one curved surface and / or at least one inclined plane. For example, as Figure 7 and Figure 8 shown, the interface between the light condensing unit 14 and the flat layer 16 can specifically be a convex surface.

[0084] In some specific embodiments, the refractive index of the flat layer 16 can be less than that of the light condensing unit 14, so that a refractive index difference is formed between the flat layer 16 and the light condensing unit 14, thereby enabling the flat layer 16 to play a role in guiding the light to exit, which is beneficial to improving the light extraction efficiency.

[0085] In some specific embodiments, as Figure 7 and Figure 8 shown, the surface of the flat layer 16 facing away from the light-emitting structure 11 and the light condensing unit 14 can be a flat surface, so that the flat layer 16 can play a flattening effect, thereby facilitating the massive transfer of the light-emitting structure 11 to the driving substrate. Therefore, without increasing the difficulty of chip transfer, the light-emitting viewing angle of the micro light-emitting device 10 can be narrowed.

[0086] It should be noted that this embodiment does not limit the specific material of the light condensing unit 14, and the material for preparing the light condensing unit 14 only needs to have the characteristics of a low extinction coefficient and a high refractive index. In some examples, the material of the light condensing unit 14 can include at least one of materials such as silicon nitride, titanium oxide, zirconium oxide, and high refractive index glue.

[0087] It should be noted that this embodiment does not limit the specific material of the flat layer 16, and the material for preparing the flat layer 16 only needs to satisfy a low extinction coefficient and a refractive index less than that of the light condensing unit 14. In some examples, the material of the flat layer 16 can include at least one of materials such as silicon oxide, PMMA (polymethyl methacrylate), and PI (polyimide).

[0088] In the above embodiment, as Figure 9As shown, the light-emitting structure 11 may include a first semiconductor layer 111, a light-emitting layer 112, and a second semiconductor layer 113. Among them, the light-emitting layer 112 and the second semiconductor layer 113 are located within the light-emitting region C1 and are sequentially stacked on one side of the first semiconductor layer 111. Moreover, the above extinction structure 12, color filtering unit 13, and light condensing unit 14 may be located on the side of the first semiconductor layer 111 facing away from the light-emitting layer 112.

[0089] Specifically, the light-emitting layer 112 may be a quantum well layer. For example, it may be an indium gallium nitride quantum well layer or an indium gallium nitride / gallium nitride multiple quantum well layer. The first semiconductor layer 111 and the second semiconductor layer 113 have different polarities. Specifically, the first semiconductor layer 111 may be one of an N-type semiconductor layer and a P-type semiconductor layer, and the second semiconductor layer 113 may be the other of an N-type semiconductor layer and a P-type semiconductor layer. Among them, the N-type semiconductor layer may specifically be an N-type gallium nitride layer or an N-type gallium arsenide layer, and the P-type semiconductor layer may specifically be a P-type gallium nitride layer or a P-type aluminum gallium nitride layer.

[0090] In some specific embodiments, the above light-emitting structure 11 may further include a buffer layer (not shown in the figure). The buffer layer is located on the side of the first semiconductor layer 111 facing away from the light-emitting layer 112. The above extinction structure 12, color filtering unit 13, and light condensing unit 14 may specifically be located on the side of the buffer layer facing away from the first semiconductor layer 111.

[0091] Specifically, the above light-emitting structure 11 may further include a first substrate (not shown in the figure). The first substrate is located on the side of the buffer layer facing away from the first semiconductor layer 111. The above extinction structure 12, color filtering unit 13, and light condensing unit 14 may specifically be located on the side of the first substrate facing away from the buffer layer.

[0092] Among them, the first substrate is used to support the film layer structure thereon. The buffer layer can relieve the stress generated between the first semiconductor layer 111 and the first substrate due to lattice mismatch and thermal expansion coefficient mismatch.

[0093] In some examples, the above first substrate may be a sapphire substrate, a silicon substrate, a silicon carbide substrate, etc. The material of the buffer layer may include buffer materials such as silicon nitride, silicon oxide, gallium nitride, or aluminum nitride. For example, the buffer layer may specifically be an unintentionally doped gallium nitride (U-GaN) layer.

[0094] It should be noted that, compared with the solutions where the light extinction structure 12, the color filtering unit 13, and the light condensing unit 14 are specifically located on the side of the first substrate facing away from the buffer layer, and the solutions where the light extinction structure 12, the color filtering unit 13, and the light condensing unit 14 are specifically located on the side of the buffer layer facing away from the first semiconductor layer 111, the solution where the light extinction structure 12, the color filtering unit 13, and the light condensing unit 14 are specifically located on the side of the first semiconductor layer 111 facing away from the light emitting layer 112 makes the light extinction structure 12, the color filtering unit 13, and the light condensing unit 14 closer to the light emitting layer 112 in the light emitting structure 11. As a result, it can improve the absorption ability of the light extinction structure 12 for the large-angle light emitted by the light emitting layer 112, enhance the light condensing effect of the light condensing unit 14 on the light emitted by the light emitting layer 112, and more effectively improve the color purity of the light emitted by the above-mentioned micro light emitting device 10.

[0095] In some specific embodiments, as Figure 9 shown, the above-mentioned light emitting structure 11 may further include a first electrode 115 and a second electrode 116. Among them, the first electrode 115 is located within the light emitting region C1 and is disposed on the side of the second semiconductor layer 113 facing away from the light emitting layer 112, and the second electrode 116 is located in the non-light emitting region C2 and is disposed on the side of the first semiconductor layer 111 facing away from the light extinction structure 12, the color filtering unit 13, and the light condensing unit 14.

[0096] Specifically, in the above-mentioned embodiment where the non-light emitting region C2 includes a spaced region C21 and a peripheral region C22, as Figure 9 shown, the second electrode 116 may be specifically located within the peripheral region C22 of the non-light emitting region C2.

[0097] In some embodiments, as Figure 9 shown, the above-mentioned light emitting structure 11 may further include a current diffusion layer 114. The current diffusion layer 114 is located within the light emitting region C1 and is disposed between the first electrode 115 and the second semiconductor layer 113. Moreover, the current diffusion layer 114 can spread the current to the second semiconductor layer 113 (for example, a P-type gallium nitride layer), thereby improving the light emitting efficiency of the above-mentioned light emitting layer 112.

[0098] And, in specific implementation, the above-mentioned current diffusion layer 114 can be obtained by evaporating multiple layers of metals (such as titanium Ti, aluminum Al, gold Au, platinum Pt, or nickel Ni, etc.) or semiconductor oxides (such as indium tin oxide ITO or zinc oxide ZnO, etc.) on the surface of the second semiconductor layer 113 facing away from the light emitting layer 112 to form current conduction.

[0099] In some embodiments, as Figure 9As shown, the light-emitting structure 11 may further include a passivation layer 117 that covers the light-emitting structure 11 to effectively block the erosion of the external water and oxygen on the light-emitting structure 11, thereby improving the product reliability.

[0100] Moreover, in the above-described embodiment where the light-emitting structure 11 further includes a current diffusion layer 114, as Figure 9 shown, the above passivation layer 117 may also cover the current diffusion layer 114 to effectively block the erosion of the external water and oxygen on the current diffusion layer 114, thereby improving the product reliability.

[0101] Specifically, as Figure 9 shown, the above first electrode 115 may include a first electrode layer 1151, a first conductive structure 1152, and a first bonding electrode 1153 that are sequentially stacked in a direction away from the second semiconductor layer 113. The above second electrode 116 may include a second electrode layer 1161, a second conductive structure 1162, and a second bonding electrode 1163 that are sequentially stacked in a direction away from the first semiconductor layer 111. Moreover, the above passivation layer 117 may cover the first electrode layer 1151 and the second electrode layer 1161 to effectively block the erosion of the external water and oxygen on the first electrode layer 1151 and the second electrode layer 1161, thereby improving the product reliability.

[0102] Among them, the first bonding electrode 1153 may be specifically disposed on a region corresponding to the first electrode layer 1151 on a side of the above passivation layer 117 away from the light-emitting structure 11, the first electrode layer 1151, and the second electrode layer 1161. The first conductive structure 1152 may be located between the first bonding electrode 1153 and the first electrode layer 1151 and penetrate through a film layer structure (such as the above passivation layer 117) between the first bonding electrode 1153 and the first electrode layer 1151. Moreover, opposite ends of the first conductive structure 1152 in the longitudinal direction Z may be electrically connected to the first bonding electrode 1153 and the first electrode layer 1151, respectively, so as to achieve electrical connection between the first bonding electrode 1153 and the first electrode layer 1151.

[0103] Among them, the second bonding electrode 1163 may be specifically disposed on a region corresponding to the second electrode layer 1161 on a side of the above passivation layer 117 away from the light-emitting structure 11, the first electrode layer 1151, and the second electrode layer 1161. The second conductive structure 1162 may be located between the second bonding electrode 1163 and the second electrode layer 1161 and penetrate through a film layer structure (such as the above passivation layer 117) between the second bonding electrode 1163 and the second electrode layer 1161. Moreover, opposite ends of the second conductive structure 1162 in the longitudinal direction Z may be electrically connected to the second bonding electrode 1163 and the second electrode layer 1161, respectively, so as to achieve electrical connection between the second bonding electrode 1163 and the second electrode layer 1161.

[0104] In some specific embodiments, in the above-mentioned light-emitting structure 11, the first semiconductor layer 111 may be an N-type semiconductor layer, and the second semiconductor layer 113 may be a P-type semiconductor layer. Correspondingly, the first electrode 115 may be a P-type electrode electrically connected to the P-type semiconductor layer, and the second electrode 116 may be an N-type electrode electrically connected to the N-type semiconductor layer, so as to realize that all pixels in the above-mentioned micro light-emitting device 10 share the same N-type electrode and each has an independent P-type electrode.

[0105] In other specific embodiments, in the above-mentioned light-emitting structure 11, the first semiconductor layer 111 may be a P-type semiconductor layer, and the second semiconductor layer 113 may be an N-type semiconductor layer. Correspondingly, the first electrode 115 may be an N-type electrode electrically connected to the N-type semiconductor layer, and the second electrode 116 may be a P-type electrode electrically connected to the P-type semiconductor layer, so as to realize that all pixels in the above-mentioned micro light-emitting device 10 share the same P-type electrode and each has an independent N-type electrode.

[0106] In some examples, the second electrode 116 may be annular, and its orthographic projection on the first semiconductor layer 111 may surround the orthographic projection of all the first electrodes 115 on the first semiconductor layer 111 for one week to reduce the contact impedance of the second electrode 116.

[0107] In some examples, the material of the above-mentioned first electrode layer 1151 may include at least one of metal materials such as titanium (Ti), gold (Au), platinum (Pt), nickel (Ni), and aluminum (Al). The material of the above-mentioned second electrode layer 1151 may include at least one of metal materials such as titanium (Ti), gold (Au), platinum (Pt), nickel (Ni), and aluminum (Al). Moreover, in specific implementation, the above-mentioned first electrode layer 1151 and the second electrode layer 1161 may have the same material and may be formed synchronously.

[0108] In some examples, the material of the above-mentioned first conductive structure 1152 may include at least one of metal materials such as titanium (Ti), gold (Au), platinum (Pt), nickel (Ni), and aluminum (Al), and the material of the above-mentioned second conductive structure 1162 may include at least one of metal materials such as titanium (Ti), gold (Au), platinum (Pt), nickel (Ni), and aluminum (Al). Moreover, in specific implementation, the above-mentioned first conductive structure 1152 and the second conductive structure 1162 may have the same material and may be formed synchronously.

[0109] In some examples, the material of the above-mentioned first bonding electrode 1153 may include at least one of metal materials such as gold (Au), indium (In), tin (Sn), and copper (Cu), and the material of the above-mentioned second bonding electrode 1163 may include at least one of metal materials such as gold (Au), indium (In), tin (Sn), and copper (Cu). Moreover, in specific implementation, the above-mentioned first bonding electrode 1153 and the second bonding electrode 1163 may have the same material and may be formed synchronously.

[0110] In some examples, the material of the above-mentioned passivation layer 117 may include at least one of insulating materials such as silicon oxide, silicon nitride, and aluminum oxide.

[0111] In the above-mentioned embodiments, as Figure 9 shown, the above-mentioned micro-light-emitting device 10 may further include a driving substrate 17. And in the micro-light-emitting device 10, the light-emitting structure 11 is disposed on one side of the driving substrate 17. The side of the light-emitting structure 11 facing away from the driving substrate 17 may be the light-emitting side of the light-emitting structure 11, and the side of the light-emitting structure 11 facing the driving substrate 17 may be the backlight side of the light-emitting structure 11.

[0112] Specifically, in the above-mentioned embodiments where the light-emitting structure 11 further includes a first electrode 115 and a second electrode 116, as Figure 9 shown, the above-mentioned light-emitting structure 11 may be bonded to the driving substrate 17 through the first electrode 115 and the second electrode 116.

[0113] In some specific embodiments, the driving substrate 17 may include a driving circuit layer 171, a first driving electrode 172, and a second driving electrode 173. Among them, the driving circuit layer 171 includes a driving circuit, and the first driving electrode 172 and the second driving electrode 173 are disposed on the same side of the driving circuit layer 171 and are both electrically connected to the driving circuit.

[0114] Moreover, in specific implementation, the first electrode 115 of the above-mentioned light-emitting structure 11 may be correspondingly bonded to the first driving electrode 172 of the driving substrate 17, and the second electrode 116 of the above-mentioned light-emitting structure 11 may be correspondingly bonded to the second driving electrode 173 of the driving substrate 17 to achieve the electrical connection between the above-mentioned light-emitting structure 11 and the driving substrate 17, so that the driving substrate 17 can drive the above-mentioned light-emitting structure 11 to emit light to realize the display function of the above-mentioned micro-light-emitting device 10.

[0115] Specifically, the above-mentioned micro-light-emitting device 10 may further include an underfill (not shown in the figure). The underfill is located between the light-emitting structure 11 and the driving substrate 17 and fills the gap between the light-emitting structure 11 and the driving substrate 17 to enhance the bonding strength between the light-emitting structure 11 and the driving substrate 17, thereby improving the reliability of the product.

[0116] In some examples, the above-mentioned bottom filling adhesive can be obtained by filling a colloid (such as epoxy resin glue) into the gap between the light-emitting structure 11 and the driving substrate 17 through an underfill process after bonding the light-emitting structure 11 to the driving substrate 17, and curing the colloid filled between the light-emitting structure 11 and the driving substrate 17.

[0117] In some examples, the above-mentioned driving substrate 17 can be a driving chip or a driving wafer.

[0118] In some examples, the material of the above-mentioned first driving electrode 172 can include conductive materials such as titanium (Ti), aluminum (Al), gold (Au), platinum (Pt), and / or nickel (Ni). The material of the above-mentioned second driving electrode 173 can include conductive materials such as titanium (Ti), aluminum (Al), gold (Au), platinum (Pt), and / or nickel (Ni). Moreover, in specific implementation, the above-mentioned first driving electrode 172 and the second driving electrode 173 can have the same material and can be formed synchronously.

[0119] In this embodiment, the above-mentioned micro light-emitting device 10 can not only be applied to the projection part of electronic devices such as optical projection and in-vehicle head-up display (HUD), but also can be applied to the display part of electronic devices. For example, the electronic device can include: any device with a display screen such as a smart phone, a smart watch, a laptop computer, a tablet computer, a dash cam, a navigator, a head-mounted device, etc. It can also be applied to the lighting part of electronic devices. For example, the electronic device can include: any device with a lighting component such as a vehicle, a street lamp, etc.

[0120] As described above, the micro-light-emitting device provided by the embodiment of the present application forms an extinction structure, at least one color filtering unit, and at least one light condensing unit on the light-emitting side of the light-emitting structure in the micro-light-emitting device. Among them, the light-emitting structure has at least one light-emitting region, the extinction structure has at least one light-transmitting region corresponding to the at least one light-emitting region respectively, and the light emitted by the light-emitting structure in each light-emitting region is emitted through its corresponding light-transmitting region. Each color filtering unit corresponds to one light-emitting region and is disposed in the light-transmitting region corresponding to its corresponding light-emitting region, and each color filtering unit is configured to transmit light of a target color and reduce the light of non-target colors in the light emitted by the light-emitting structure in its corresponding light-emitting region. The at least one light condensing unit at least covers the at least one color filtering unit and is respectively corresponding to the at least one light-transmitting region, and each light condensing unit is configured to converge the light emitted from its corresponding light-transmitting region. Therefore, it is possible to encapsulate a micro-light-emitting diode chip as the light-emitting structure together with the extinction structure, at least one color filtering unit, and at least one light condensing unit to form a micro-light-emitting device. In the micro-light-emitting device, the extinction structure can absorb the large-angle light emitted by the light-emitting region of the micro-light-emitting diode chip, the color filtering unit can selectively reduce the light of non-target colors in the light emitted by the light-emitting region of the micro-light-emitting diode chip, and the light condensing unit can convert the light with a relatively large viewing angle emitted from the light-transmitting region into light with a relatively small viewing angle. Therefore, it is possible to improve the light crosstalk problem between the pixels of the micro-light-emitting diode chip, improve the color purity of the light emitted by the micro-light-emitting diode chip, and improve the forward viewing angle brightness of the micro-light-emitting diode chip, which is beneficial to improving the display performance of the Micro LED micro-display module.

[0121] Please refer to Figure 10 , Figure 10 which is a schematic flowchart of the manufacturing method of the micro-light-emitting device provided by the embodiment of the present application. In this embodiment, taking the formation of the micro-light-emitting device 10 of any of the above embodiments (as Figures 1 to 9 shown) as an example to illustrate this manufacturing method, the specific process of the manufacturing method of the micro-light-emitting device 10 can be as follows:

[0122] Step S11: Provide a light-emitting structure 11, and the light-emitting structure 11 has at least one light-emitting region C1 (as Figure 3 shown).

[0123] Step S12: Form an extinction structure 12 on the light-emitting side of the light-emitting structure 11. The extinction structure 12 has at least one light-transmitting region 12A, and the at least one light-transmitting region 12A is respectively corresponding to the at least one light-emitting region C1, and the light emitted by the light-emitting structure 11 in each light-emitting region C1 is emitted through its corresponding light-transmitting region 12A (as Figure 2 , Figure 4 orFigure 5 as shown

[0124] Specifically, as Figure 2 , Figure 4 or Figure 5 shown, on the side of the light extinction structure 12 facing away from the light emitting structure 11 in each light transmissive region 12A, an opening 121 may be provided, and the opening 121 may penetrate through the light extinction structure 12 so that the bottom wall surface 121B of the opening 121 is provided by the light emitting side surface of the light emitting structure 11.

[0125] Moreover, in specific implementation, the above light extinction structure 12 may be formed on the light emitting side of the light emitting structure 11 through conventional micro-structure array preparation processes such as spin coating, photolithography, etching, inkjet printing, nanoimprinting, etc.

[0126] Step S13: Form at least one color filter unit 13, each color filter unit 13 corresponding to a light emitting region C1 and being disposed in the light transmissive region 12A corresponding to its corresponding light emitting region C1, and each color filter unit 13 being configured to transmit light of a target color and reduce light of non-target colors in the light emitted by the light emitting structure 11 in its corresponding light emitting region C1 (such as Figure 2 , Figure 4 or Figure 5 shown).

[0127] In some embodiments, as Figure 2 , Figure 4 or Figure 5 shown, each color filter unit 13 may include a transmissive reflection layer 131, and in each color filter unit 131, the transmissive reflection layer 131 may be configured to: transmit light of a target color and reflect light of non-target colors.

[0128] Specifically, the above transmissive reflection layer 131 may include multiple layers of refractive material layers stacked in sequence in a direction away from the light emitting structure 11, and adjacent two layers of refractive material layers may have different refractive indices.

[0129] In some embodiments, as Figure 2 , Figure 4 or Figure 5 shown, each color filter unit 13 may include a color conversion layer 132, and in each color filter unit 131, the color conversion layer 132 may be configured to: transmit light of a target color and convert light of non-target colors into light of a target color.

[0130] Specifically, as Figure 2 , Figure 4 or Figure 5As shown, the number of light-emitting regions C1 of the above-mentioned light-emitting structure 11 can be multiple. The light-emitting colors of the light-emitting structure 11 in these multiple light-emitting regions C1 can be the same and can all be the initial color. Correspondingly, the number of the above-mentioned color filtering units 13 can also be multiple. These multiple color filtering units 13 can include at least one first color filtering unit 13A and at least one second color filtering unit 13B. Moreover, the color conversion layer 132 of each first color filtering unit 13A can be configured to: transmit light of a first target color and convert light of the initial color into light of the first target color, and the initial color is different from the first target color. The color conversion layer 132 of each second color filtering unit 13B can be configured to: transmit light of a second target color and convert light of the initial color into light of the second target color, and the initial color is different from the second target color.

[0131] In some embodiments, as Figure 2 , Figure 4 or Figure 5 shown, each color filtering unit 13 can include a color absorption layer 131. And in each color filtering unit 13, the color absorption layer 133 can be configured to: transmit light of the target color and absorb light of non-target colors.

[0132] In some specific embodiments, as Figure 6 shown, each color filtering unit 13 can include both the above-mentioned color conversion layer 132 and the above-mentioned transmission and reflection layer 131. And in each color filtering unit 13, the above-mentioned color conversion layer 132 and the above-mentioned transmission and reflection layer 131 can be stacked in sequence in a direction away from the light-emitting structure 11.

[0133] In some other specific embodiments, as Figure 6 shown, each color filtering unit 13 can include both the above-mentioned color conversion layer 132 and the above-mentioned color absorption layer 133. And in each color filtering unit 13, the above-mentioned color conversion layer 132 and the above-mentioned color absorption layer 133 can be stacked in sequence in a direction away from the light-emitting structure 11.

[0134] Moreover, in specific implementation, the above-mentioned at least one color filtering unit 13 can be formed on the light-emitting side of the light-emitting structure 11 by conventional thin-film deposition processes such as PECVD (Plasma Enhanced Chemical Vapor Deposition), spin coating, inkjet printing, spraying, screen printing, sputtering, photolithography, etching, and their patterning processes.

[0135] Specifically, in the above-mentioned embodiment where there is an opening 121B on the side of the light extinction structure 12 away from the light-emitting structure 11 in each light-transmitting region 12A, as Figure 2 , Figure 4 or Figure 5As shown, each color filter unit 13 can be disposed on the bottom wall surface 121B of the opening 121 of the corresponding light-transmitting region 12A corresponding to its corresponding light-emitting region C1. And, before the above step S13, the manufacturing method of the above micro light-emitting device 10 may further include:

[0136] Step A: Form a reflective layer 15, and the reflective layer 15 covers at least the side wall surface 121A of the opening 121 (as Figure 7 or Figure 8 shown).

[0137] In some specific embodiments, as Figure 7 shown, the above reflective layer 15 can be a patterned reflective layer 15A, and the patterned reflective layer 15A covers at least a part of the side wall surface 121A of the opening 121 of each light-transmitting region 12A, and exposes at least a part of the bottom wall surface 121B of the opening 121 of each light-transmitting region 12A. Specifically, the patterned reflective layer 15A can cover all of the side wall surfaces 112A of the opening 121 of each light-transmitting region 12A, and expose all of the bottom wall surfaces 121B of the opening 121 of each light-transmitting region 12A, and can also cover other regions of the surface of the light extinction structure 12 facing away from the light-emitting structure 11 except for the region where the opening 121 is located.

[0138] And, in specific implementation, the above patterned reflective layer 15A can be formed on the light-emitting side of the light-emitting structure 11 by conventional thin-film deposition processes such as PECVD, spin coating, inkjet printing, evaporation, sputtering, photolithography, etching, and their patterning processes.

[0139] In other specific embodiments, as Figure 8 shown, the above reflective layer 15 can be a full-surface reflective layer 15B, and the full-surface reflective layer 15 adheres to the side wall surface 121A and the bottom wall surface 121B of the opening 121 of each light-transmitting region 12A and other regions of the surface of the light extinction structure 12 facing away from the light-emitting structure 11 except for the region where the opening 121 is located.

[0140]

[0140] And, in specific implementation, the above full-surface reflective layer 15B can be formed on the light-emitting side of the light-emitting structure 11 by conventional thin-film deposition processes such as PECVD, ALD (atomic layer deposition), spin coating, spraying, inkjet printing.

[0141] Step S14: Form at least one light condensing unit 14 on the light-emitting side of the light-emitting structure 11, and the at least one light condensing unit 14 covers at least one color filter unit 13, is respectively arranged corresponding to at least one light-transmitting region 12A, and each light condensing unit 14 is configured to converge the light emitted from its corresponding light-transmitting region 12A.

[0142] Specifically, in the above embodiment where the manufacturing method of the above micro-light emitting device 10 further includes the above step A, as Figure 7 or Figure 8 shown, the orthographic projection of each light condensing unit 14 on the light emitting structure 11 can cover the orthographic projection of the reflective layer 15 covered on the side wall surface 121A of the opening 121 of its corresponding light transmissive region 12A on the light emitting structure 11.

[0143] Moreover, in specific implementation, the above at least one light condensing unit 14 can be formed on the light emitting side of the light emitting structure 11 through conventional thin film deposition processes such as PECVD, spin coating, inkjet printing, nanoimprinting, photolithography, etching, thermal reflow, and their patterning processes.

[0144] In some embodiments, after the above step S14, the manufacturing method of the above micro-light emitting device 10 can further include:

[0145] Step S15: Form a flat layer 16 on the light emitting side of the light emitting structure 11, and the flat layer 16 at least covers the light condensing unit 14 (as Figure 7 or Figure 8 shown).

[0146] Specifically, the refractive index of the flat layer 16 can be less than the refractive index of the light condensing unit 14. The surface of the flat layer 16 facing away from the light emitting structure 11 and the light condensing unit 14 can be a flat surface.

[0147] Moreover, in specific implementation, the flat layer 16 can be formed on the light emitting side of the light emitting structure 11 through conventional thin film deposition processes such as PECVD, spin coating, spraying, and inkjet printing.

[0148] In the above embodiment, after the above step S11, the manufacturing method of the above micro-light emitting device 10 can further include:

[0149] Step B: Dispose the light emitting structure 11 on one side of the driving substrate 17 (as Figure 9 shown).

[0150] Moreover, in specific implementation, the above step B can be executed before the above step S12, or can be executed after the above step S14.

[0151] It should be noted that the specific structure of the micro-light emitting device 10 in this embodiment can refer to the specific implementation manners in the above embodiments of the micro-light emitting device, so details are not described herein again.

[0152] As can be seen from the above, in the manufacturing method of the micro-light-emitting device provided by the embodiments of the present application, by providing a light-emitting structure having at least one light-emitting region, and forming an extinction structure on the light-emitting side of the light-emitting structure, the extinction structure having at least one light-transmitting region, the at least one light-transmitting region being respectively arranged corresponding to the at least one light-emitting region, and the light emitted by the light-emitting structure in each light-emitting region being emitted through its corresponding light-transmitting region, and then forming at least one color filtering unit, each color filtering unit corresponding to a light-emitting region and being arranged in the light-transmitting region corresponding to its corresponding light-emitting region, and each color filtering unit being configured to transmit light of a target color and reduce light of non-target colors in the light emitted by the light-emitting structure in its corresponding light-emitting region, and forming at least one light condensing unit on the light-emitting side of the light-emitting structure, the at least one light condensing unit at least covering the at least one color filtering unit and being respectively arranged corresponding to the at least one light-transmitting region, and each light condensing unit being configured to converge the light emitted from its corresponding light-transmitting region, so that it is possible to encapsulate a micro-light-emitting diode chip as the light-emitting structure together with the extinction structure, at least one color filtering unit and at least one light condensing unit to form a micro-light-emitting device. And in the micro-light-emitting device, the extinction structure can absorb the large-angle light emitted by the light-emitting region of the micro-light-emitting diode chip, the color filtering unit can selectively reduce the light of non-target colors in the light emitted by the light-emitting region of the micro-light-emitting diode chip, and the light condensing unit can convert the light with a relatively large viewing angle emitted from the light-transmitting region into light with a relatively small viewing angle. Therefore, it is possible to improve the problem of light crosstalk between pixels of the micro-light-emitting diode chip, and improve the color purity of the light emitted by the micro-light-emitting diode chip, and also improve the forward viewing angle brightness of the micro-light-emitting diode chip, which is beneficial to improving the display performance of the Micro LED micro-display module.

[0153] It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments may be combined with each other. The features, structures or characteristics described above may be combined in any suitable manner in one or more embodiments.

[0154] The above are only the preferred embodiments of the present application, and are not intended to limit the present application. Any modifications, equivalent replacements and improvements made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A micro light-emitting device, characterized in that, Comprising: A light-emitting structure having at least one light-emitting region; An extinction structure provided on the light-emitting side of the light-emitting structure and having at least one light-transmitting region, the at least one light-transmitting region being respectively arranged corresponding to the at least one light-emitting region, and light emitted by the light-emitting structure within each light-emitting region being emitted through its corresponding light-transmitting region; At least one color filtering unit, each color filtering unit corresponding to one light-emitting region and being provided within the light-transmitting region corresponding to its corresponding light-emitting region, and each color filtering unit being configured to: transmit light of a target color and reduce light of non-target colors in the light emitted by the light-emitting structure within its corresponding light-emitting region; At least one light condensing unit provided on the light-emitting side of the light-emitting structure and at least covering the at least one color filtering unit, the at least one light condensing unit being respectively arranged corresponding to the at least one light-transmitting region, and each light condensing unit being configured to converge light emitted through its corresponding light-transmitting region.

2. The micro light-emitting device according to claim 1, characterized in that, The color filtering unit includes a transmissive reflective layer, and the transmissive reflective layer of the color filtering unit is configured to: transmit light of the target color and reflect light of non-target colors; The transmissive reflective layer includes a plurality of refractive material layers stacked in sequence in a direction away from the light-emitting structure, and adjacent two refractive material layers have different refractive indices.

3. The micro light-emitting device according to claim 2, wherein, The transmissive reflective layer is a stacked structure formed by alternately stacking a plurality of first refractive material layers and a plurality of second refractive material layers in a direction away from the light-emitting structure, wherein the first refractive material layer and the second refractive material layer have different refractive indices.

4. The micro-light-emitting device according to claim 1, characterized in that, The color filtering unit includes a color conversion layer, and the color conversion layer of the color filtering unit is configured to: transmit light of the target color and convert light of non-target colors into light of the target color.

5. The micro-light emitting device according to claim 4, wherein, The number of the light-emitting regions is multiple, and the light-emitting colors of the light-emitting structures within the multiple light-emitting regions are all initial colors; the number of the color filtering units is multiple, and the multiple color filtering units include at least one first color filtering unit and at least one second color filtering unit; Wherein, the color conversion layer of each first color filtering unit is configured to: transmit light of a first target color and convert the light of the initial color into light of the first target color, and the initial color is different from the first target color; The color conversion layer of each second color filtering unit is configured to: transmit light of a second target color and convert the light of the initial color into light of the second target color, and the initial color is different from the second target color.

6. The micro light-emitting device according to claim 4, characterized in that, The color filtering unit further includes a color removal layer, and in the color filtering unit, the color conversion layer and the color removal layer of the color filtering unit are stacked in sequence in a direction away from the light-emitting structure, and the color removal layer of the color filtering unit is configured to: transmit light of the target color and reflect or absorb light of non-target colors.

7. The micro-light emitting device according to claim 1, characterized in that, The color filter unit includes a color absorption layer, and the color absorption layer of the color filter unit is configured to transmit light of the target color and absorb light of non-target colors.

8. The micro-light-emitting device according to claim 1, wherein, The light extinction structure further has a light blocking region disposed around each of the light transmissive regions; The micro light emitting device further includes: A reflective layer that at least covers the side wall surfaces of the light extinction structure within the light blocking region, and the orthographic projection of the at least one light condensing unit on the light emitting structure covers the orthographic projection of the reflective layer covered on the side wall surfaces of the light extinction structure within the light blocking region on the light emitting structure.

9. The micro light-emitting device according to claim 1, wherein The micro light emitting device further includes: A flat layer disposed on the light emitting side of the light emitting structure and at least covering the light condensing unit, the refractive index of the flat layer is less than the refractive index of the light condensing unit, and the surface of the flat layer facing away from the light emitting structure and the light condensing unit is a flat surface.

10. The micro light-emitting device according to claim 1, characterized in that, The light emitting structure further has a non-light emitting region disposed around each of the light emitting regions, and includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, a first electrode, and a second electrode; Wherein, the light emitting layer and the second semiconductor layer are located within the light emitting region and are sequentially stacked on one side of the first semiconductor layer, and the light extinction structure, the color filter unit, and the light condensing unit are located on the side of the first semiconductor layer facing away from the light emitting layer; The first electrode is located within the light emitting region and is disposed on the side of the second semiconductor layer facing away from the light emitting layer, and the second electrode is located within the non-light emitting region and is disposed on the side of the first semiconductor layer facing away from the light extinction structure, the color filter unit, and the light condensing unit.

11. The micro light-emitting device according to claim 1, wherein, The micro light emitting device further includes: A driving substrate, the light emitting structure is disposed on one side of the driving substrate, and the side of the light emitting structure facing away from the driving substrate is the light emitting side of the light emitting structure.

12. A manufacturing method of a micro light-emitting device, characterized in that, Includes: Providing a light emitting structure having at least one light emitting region; Forming a light extinction structure on the light emitting side of the light emitting structure, the light extinction structure having at least one light transmissive region, the at least one light transmissive region being respectively corresponding to the at least one light emitting region, and light emitted by the light emitting structure within each light emitting region being emitted through its corresponding light transmissive region; Forming at least one color filter unit, each color filter unit corresponding to one light emitting region and being disposed within the light transmissive region corresponding to its corresponding light emitting region, and each color filter unit being configured to transmit light of a target color and reduce light of non-target colors among the light emitted by the light emitting structure within its corresponding light emitting region; Forming at least one light condensing unit on the light emitting side of the light emitting structure, the at least one light condensing unit at least covering the at least one color filter unit and being respectively corresponding to the at least one light transmissive region, and each light condensing unit being configured to converge light emitted through its corresponding light transmissive region.

13. The manufacturing method of the micro light-emitting device according to claim 12, characterized in that, An opening is provided on a side of the light extinction structure facing away from the light emitting structure within the light transmissive region, and the color filtering unit is disposed on a bottom wall surface of the opening of the light transmissive region corresponding to its corresponding light emitting region; Before forming at least one color filtering unit, the method for manufacturing the micro light emitting device may further include: forming a reflective layer that at least covers a side wall surface of the opening; Moreover, a positive projection of the light condensing unit on the light emitting structure covers a positive projection of the reflective layer covered on the side wall surface of the opening of the corresponding light transmissive region on the light emitting structure.

14. According to the method for manufacturing the micro light emitting device as claimed in claim 12, after forming at least one light condensing unit on an outgoing light side of the light emitting structure, the method for manufacturing the micro light emitting device further includes: forming a planar layer on the outgoing light side of the light emitting structure, the planar layer at least covering the light condensing unit, and a refractive index of the planar layer is less than a refractive index of the light condensing unit, and a surface of the planar layer facing away from the light emitting structure and the light condensing unit is a flat surface.

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