An integrated dynamically controlled high-selectivity infrared polarization detector and its preparation method

Abstract

The present invention discloses an integrated, dynamically controlled, high-selectivity infrared polarization detector and a method for fabricating it. The detector relates to the field of optoelectronics. The detector comprises, from bottom to top, a substrate layer, a metal reflective layer, a dielectric layer, and an electrode layer, further comprising a two-dimensional material layer. The electrode layer comprises a source electrode, a drain electrode, a metal two-dimensional metamaterial integrated in the source electrode, and a metal two-dimensional metamaterial integrated in the drain electrode. The source and drain electrodes are symmetrically arranged, with a channel provided between them. The two-dimensional material layer spans the channel and is electrically connected to the source and drain electrodes. When the detector operates in a zero-bias state, the optical response is derived from the photothermoelectric effect induced by the Schottky junction formed by the source and drain electrodes and the metal two-dimensional metamaterial. The carrier concentration of the graphene in the source and drain electrodes is controlled by the metal reflective layer, and the polarization extinction ratio and direction of the photocurrent are controlled under illumination of linearly polarized light at any specific angle. The present invention achieves an infinite extinction ratio and a zero photocurrent response at any polarization angle.

Description

Technical Field

[0001] The present invention relates to the field of optoelectronic technology, and in particular to an integrated dynamically controlled high-selectivity infrared polarization detector and a preparation method thereof. Background Art

[0002] Like amplitude, phase, and frequency, polarization is a fundamental property of light. The polarization of light refers to the direction in which one of the electric components of the light field oscillates. Polarization has found numerous applications in daily life, including remote sensing, atmospheric monitoring, medical diagnostics, and target detection, and is of interest in virtually all areas of optical science and technology. However, its application remains limited by the large size and high cost of the numerous polarization components involved. To meet the growing demand for device miniaturization and system integration, miniaturized optical devices and compact detection systems are essential.

[0003] Traditional solutions rely on external optical systems including polarizers and wave plates, and the complexity and large size of the optical ellipticity detector are obvious. Although metasurfaces, as flat optical devices, can potentially reduce the footprint of optical polarization detectors by replacing traditional polarizers or wave plates, they cannot avoid the problems of energy loss and alignment difficulties. Although some studies have proposed materials with anisotropic or linear photocurrent effects for optical polarization detection without optical lenses, these materials are not common and their polarization discrimination capabilities are quite low. In this case, directly integrating wire grid structures with photoelectric detection materials to realize ultra-compact optical polarization detectors is an attractive direction that requires in-depth research. The integrated subwavelength grating structure not only provides linear polarization resolution, but also enhances the absorptivity of the detection material through enhanced local fields. However, the biggest problem is the insufficient polarization discrimination capability. Summary of the Invention

[0004] The purpose of the present invention is to provide an integrated dynamically controlled high-selectivity infrared polarization detector and a preparation method to solve the problems of low polarization extinction ratio of on-chip linear polarization detection, high processing precision requirements, and inability to dynamically switch working states.

[0005] To achieve the above-mentioned objectives, the present invention provides an integrated dynamically controlled high-selectivity infrared polarization detector, comprising: a substrate layer, a metal reflective layer, a dielectric layer, and an electrode layer from bottom to top; the integrated dynamically controlled high-selectivity infrared polarization detector also includes a two-dimensional material layer, which is arranged on the electrode layer or between the dielectric layer and the electrode layer.

[0006] The electrode layer includes a source, a drain, a metal two-dimensional metamaterial integrated in the source, and a metal two-dimensional metamaterial integrated in the drain; the source and the drain are symmetrically arranged, and a channel is provided between the source and the drain; the two-dimensional material layer spans the channel and electrically connects the source and the drain.

[0007] When the integrated dynamically controlled high-selectivity infrared polarization detector operates in a zero-bias state, the optical response comes from the photothermoelectric effect induced by the Schottky junction formed by the source and drain electrodes and the metal two-dimensional metamaterial; the carrier concentration of the graphene of the source and drain electrodes is configured through the metal reflective layer, and the polarization extinction ratio and direction of the photocurrent are regulated under the irradiation of linearly polarized light at any specific angle.

[0008] Optionally, the material of the substrate layer is a semiconductor process base material.

[0009] Optionally, the thickness of the metal reflective layer is greater than or equal to twice the skin depth of the electromagnetic wave in the metal reflective layer.

[0010] Optionally, the dielectric layer is a medium that is transparent in the working band.

[0011] Optionally, the thickness of the dielectric layer is less than a quarter of the detection wavelength.

[0012] Optionally, the metal two-dimensional metamaterial integrated in the source and the metal two-dimensional metamaterial integrated in the drain are metal grating antenna arrays that are mirror images of each other.

[0013] Optionally, the thickness of the electrode layer is greater than or equal to twice the skin depth of the electromagnetic wave in the electrode layer.

[0014] To achieve the above-mentioned object, the present invention also provides a method for preparing an integrated dynamically controlled high-selectivity infrared polarization detector, which includes the following steps.

[0015] Ultraviolet lithography is used to define the split gate pattern on the substrate layer, and electron beam evaporation is used to deposit metal, and the metal reflective layer is obtained through lift-off technology.

[0016] A dielectric layer is grown on the surface of the metal reflective layer by adopting atomic layer deposition, electron beam evaporation and magnetron sputtering technology.

[0017] Electron beam lithography is used to define a pattern on the surface of the dielectric layer, and metal is deposited using electron beam evaporation technology, and the electrode layer is obtained by lift-off technology.

[0018] Obtain two-dimensional materials.

[0019] The two-dimensional material is transferred onto the electrode layer or between the dielectric layer and the electrode layer using a dry transfer technology.

[0020] Optionally, obtaining the two-dimensional material specifically includes: obtaining the two-dimensional material from a single crystal sample using a mechanical exfoliation method, or obtaining the two-dimensional material using a growth method.

[0021] Optionally, the growth method is chemical vapor deposition or physical vapor deposition.

[0022] According to specific embodiments provided by the present invention, the following technical effects are disclosed: Through the combined control of metal grating antenna arrays and metal reflective layers at the source and drain electrodes, the present invention enables the polarity reversal and magnitude variation of the photocurrent output by an integrated, dynamically controlled high-selectivity infrared polarization detector. This enables an infinitely high extinction ratio and a zero photocurrent response at any polarization angle. Furthermore, without the need for independent optical components, the invention boasts high integration, ease of fabrication, compact size, high stability and reliability, and extremely high universality. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0024] Figure 1 This is a schematic structural diagram of the integrated dynamically controlled high selectivity infrared polarization detector provided by the present invention.

[0025] Figure 2 A side view of the integrated dynamically controlled high-selectivity infrared polarization detector provided by the present invention.

[0026] Figure 3 A top view of the integrated dynamically controlled high-selectivity infrared polarization detector provided by the present invention.

[0027] Figure 4 Schematic diagram of the structure of the metal grating unit.

[0028] Figure 5 The present invention provides a flow chart of a method for preparing an integrated dynamically controlled high-selectivity infrared polarization detector.

[0029] Figure 6 This is a data graph showing how to achieve a photocurrent extinction ratio close to infinity and -1 by adjusting the gate voltage.

[0030] Figure 7 This is a comparison chart of the test value and theoretical value of the Stokes parameter S1 directly measured when the photocurrent extinction ratio is -1.

[0031] Figure 8 This is a comparison chart of the test value and theoretical value of the Stokes parameter S2 directly measured when the photocurrent extinction ratio is -1.

[0032] Figure 9 This is a relationship diagram between the response rate of the integrated dynamically controlled high selectivity infrared polarization detector provided by the present invention and the wavelength of the detection light.

[0033] Explanation of symbols: 1-substrate layer, 2-metal reflective layer, 3-dielectric layer, 4-electrode layer, 5-two-dimensional material layer, 6-source, 7-drain, 8-metal grating antenna array. DETAILED DESCRIPTION

[0034] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0035] The polarization extinction ratio (PER) is defined as the ratio of the maximum to the minimum light response generated by a photodetector when linearly polarized light of different polarization angles is incident. This ratio is greater than 1.

[0036] The purpose of the present invention is to provide an integrated dynamically controlled high-selectivity infrared polarization detector and a preparation method thereof, which has ultra-high linear polarization light resolution capability and can obtain an ultra-high extinction ratio within a suitable wavelength range.

[0037] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0038] like Figure 1 and Figure 2 As shown, the integrated dynamically controlled high selectivity infrared polarization detector provided by the present invention includes: a substrate layer 1, a metal reflective layer 2, a dielectric layer 3 and an electrode layer 4 from bottom to top.

[0039] The integrated dynamically controlled high selectivity infrared polarization detector further includes a two-dimensional material layer 5, which is disposed on the electrode layer 4 or between the dielectric layer 3 and the electrode layer 4. That is, the upper and lower order of the electrode layer 4 and the two-dimensional material layer 5 can be reversed.

[0040] Specifically, substrate layer 1 serves as the support layer for an integrated, dynamically controlled, high-selectivity infrared polarization detector. Substrate layer 1 is made of a semiconductor substrate material. Semiconductor substrate materials include, but are not limited to, silicon, gallium arsenide, and gallium nitride. Substrate layer 1 has a thickness of h4.

[0041] The thickness of the metal reflective layer 2 is greater than or equal to twice the skin depth of the electromagnetic wave in the metal reflective layer 2. The metal reflective layer 2 is a complete metal reflective layer 2 with a thickness of h3. The material of the metal reflective layer 2 is a highly conductive metal, including but not limited to gold, silver, aluminum, or alloys thereof.

[0042] The dielectric layer 3 is a medium transparent in the working wavelength band, including but not limited to Al2O3, SiO2, MgF2, ZnS, HfO2, etc. The thickness h2 of the dielectric layer 3 is less than a quarter of the detection wavelength.

[0043] The electrode layer 4 is a layer of highly conductive metal with a thickness of h1, including but not limited to gold, silver, aluminum or alloys thereof. The thickness h1 of the electrode layer 4 is greater than or equal to twice the skin depth of the electromagnetic wave in the electrode layer 4.

[0044] like Figure 3 As shown, the electrode layer 4 includes a source electrode 6, a drain electrode 7, a metal two-dimensional metamaterial integrated in the source electrode 6, and a metal two-dimensional metamaterial integrated in the drain electrode 7. The source electrode 6 and the drain electrode 7 are symmetrically arranged, and a channel is provided between the source electrode 6 and the drain electrode 7.

[0045] The metal two-dimensional metamaterial integrated in the source 6 and the metal two-dimensional metamaterial integrated in the drain 7 are metal grating antenna arrays 8 that are mirror images of each other.

[0046] like Figure 4 As shown, mirror-image metal grating antenna arrays 8 are integrated into the source 6 and drain 7 regions. The size of the metal grating unit structure is determined by g (period length), p (grating width), and l (grating length). The mirror-image metal grating antenna arrays 8 are connected to the source 6 and drain 7 on their left and right sides, respectively. The channel width between the two regions is less than or equal to 4μm.

[0047] Since the metal grating antenna array 8, the dielectric layer 3 and the metal reflective layer 2 form a Salisbury screen, the incident light reaches a critical coupling state when phase matching is achieved, thereby maximally exciting the local light field.

[0048] In a specific embodiment, the two-dimensional material layer 5 is disposed on the metallic two-dimensional metamaterial. The two-dimensional material layer 5 spans the channel and is electrically connected to the source electrode 6 and the drain electrode 7. The two-dimensional material layer 5 is a material with atomic-level longitudinal dimensions, including but not limited to two-dimensional semiconductors and two-dimensional semimetallic materials. The interlayers of the two-dimensional material layer 5 are bonded by van der Waals forces and lack dangling bonds. Materials for the two-dimensional material layer 5 include but are not limited to graphene, hBN, MoS2, black phosphorus, WS2, etc.

[0049] In the present invention, the metal grating antenna array 8 is fused with the electrode at one end, and each metal grating, the dielectric spacer layer below it, and the metal bottom surface together constitute an optical microstrip antenna. Among them, the metal grating is a grating in the metal grating antenna array 8. The combination of the metal grating, the dielectric spacer layer, and the metal bottom surface forms a Salisbury screen mode structure. When the optical microstrip antenna resonates with the incident light, an enhanced local field is generated in the dielectric layer 3. The two-dimensional material above the dielectric layer 3 will strongly interact with the local light field, and its absorption rate will be significantly enhanced. By fusing the optical microstrip antenna with the electrode at one end, the light absorption in the electrode-two-dimensional material contact junction area is significantly enhanced by utilizing efficient coupling and light field localization, while extending the boundary of the contact junction and improving the photocurrent receiving efficiency.

[0050] For the linear metal grating antennas in the metal grating antenna array 8, only the TM waves perpendicular to the grating are efficiently coupled into the Salisbury screen mode. For non-TM waves, however, most of the light is reflected, and the optical field in the composite structure is very limited. Therefore, when the TM waves perpendicular to the grating are localized near the metal optical antenna, the optical field in the two-dimensional material is enhanced, and the responsivity of the integrated dynamically controlled high-selectivity infrared polarization detector is improved.

[0051] When the integrated, dynamically controlled, high-selectivity infrared polarization detector uses a self-driven response based on the photothermoelectric effect, the source 6 and drain 7 generate a photocurrent in a specific direction when stimulated by a light source. By utilizing a metal grating in a localized region of the source 6 that is mirror-symmetric to the drain 7, a directional photocurrent is generated in the opposite direction to that of the drain 7 when incident with linearly polarized light at a specific angle.

[0052] When the integrated, dynamically controlled, high-selectivity infrared polarization detector operates in a zero-bias state, the optical response originates from the photothermoelectric effect induced by the Schottky junction formed by the source electrode 6, the drain electrode 7, and the metallic two-dimensional metamaterial. The carrier concentration of the graphene in the source electrode 6 and the drain electrode 7, configured by the metal reflective layer 2, modulates the polarization extinction ratio and direction of the photocurrent under illumination with linearly polarized light at any specific angle.

[0053] Specifically, a gate voltage is applied to the source 6 and the drain 7 respectively through a split gate (metal reflective layer 2) to change the carrier concentration of the graphene. The positive (negative) gate voltage reduces (increases) the Seebeck coefficient of the graphene in the channel, and increases (decreases) the difference between the Seebeck coefficient of the graphene controlled by the metal antenna pinning, thereby changing the carrier concentration of the graphene. The photocurrent at a specific angle is made close to 0 by gate regulation, and the extinction ratio is close to infinity. When the extinction ratio is -1, the photocurrent at this time is proportional to S2. The present invention has ultra-high linear polarized light resolution within a certain wavelength range, and obtains an ultra-high extinction ratio within a suitable wavelength range.

[0054] like Figure 5 As shown, the present invention also provides a method for preparing the above-mentioned integrated dynamically controlled high selectivity infrared polarization detector, including steps 100 to 500.

[0055] Step 100: Use ultraviolet lithography to define a split gate pattern on the substrate layer, and use electron beam evaporation to deposit metal, and then use lift-off technology to obtain a metal reflective layer. Alternatively, thermal evaporation can be used to grow the metal reflective layer on the substrate layer.

[0056] Step 200: growing a dielectric layer on the surface of the metal reflective layer using atomic layer deposition, electron beam evaporation, and magnetron sputtering techniques.

[0057] Step 300: using electron beam lithography to define a pattern on the surface of the dielectric layer, using electron beam evaporation to deposit metal, and obtaining an electrode layer through lift-off technology.

[0058] Step 400: Obtaining a two-dimensional material. In this embodiment, the two-dimensional material is obtained from a single crystal sample using a mechanical exfoliation method, or the two-dimensional material is obtained using a growth method, wherein the growth method is chemical vapor deposition or physical vapor deposition.

[0059] Step 500: Using a dry transfer technique to transfer the two-dimensional material onto the electrode layer or between the dielectric layer and the electrode layer.

[0060] The target wavelength for detection in this embodiment is 4750 nm. Electromagnetic simulation optimization revealed that the metal reflective layer 2 is made of Au, grown using electron beam evaporation technology, with a thickness of 100 nm. The dielectric layer 3 is made of Al2O3 with a thickness of 225 nm. The electrode layer 4 is made of Ti and Au. The structural dimensions of the metal two-dimensional metamaterial are p = 660 nm, g = 590 nm, l = 22 μm, and h1 = 30 nm (Ti thickness is 3 nm, Au thickness is 27 nm). The channel width between the source 6 and drain 7 is 4 μm. The metal grating antenna on one side of the source 6 and drain 7 measures 16 μm × 33 μm. The substrate layer 1 is a 500 μm thick, single-layered, double-thick Si substrate with a 285 nm thick SiO2 oxide layer.

[0061] In order to improve the contact between Au and the dielectric material, Ti is grown as an adhesion layer at the interface between the metal reflective layer 2 and SiO2 and Al2O3 using electron beam evaporation, with thicknesses of 10 nm and 5 nm respectively.

[0062] The 2D material layer 5 is made of graphene, with a thickness of 5 nm. The graphene, obtained by mechanical exfoliation, is transferred to the electrode layer 4 via polydimethylsiloxane (PDMS), spanning the channel. The graphene contacts the Au, forming a Schottky junction. The self-driven photocurrent at this junction is attributed to the photothermoelectric effect.

[0063] In the test configuration, the wavelength of the incident light is 4.75μm and the optical power is 33.1μW. The incident light passes through the linear polarizer and the 1 / 2 wave plate in sequence and irradiates the surface of the integrated dynamically controlled high-selectivity infrared polarization detector. The polarization extinction ratio of the photocurrent output by the integrated dynamically controlled high-selectivity infrared polarization detector is dynamically controlled by the voltage of the split gate, ranging from negative infinity to positive infinity.

[0064] like Figures 6 to 8 As shown in the figure, when the polarization extinction ratio of the integrated dynamically controlled high-selectivity infrared polarization detector is -1, the integrated dynamically controlled high-selectivity infrared polarization detector is in Stokes parameter direct detection mode. The analytical error rates of the Stokes parameters S1 and S2 are only 1.5% and 2.0%, respectively.

[0065] like Figure 9 As shown, the metal grating antenna array 8 is designed to have a peak absorption wavelength of 4.75 μm. The integrated dynamically controlled high-selectivity infrared polarization detector responds in a wide band. A higher response can be obtained by designing the antenna size, and an ultra-high polarization extinction ratio can be achieved by combining dynamic control.

[0066] In summary, the beneficial effects of the present invention include at least the following three points.

[0067] (1) By combining the metal grating antenna array 8 and the split gate at the source 6 and drain 7, the photocurrent output by the detector can achieve polarity reversal and magnitude change. Therefore, an infinitely high extinction ratio and a zero photocurrent response at any polarization angle can be achieved.

[0068] (2) By stimulating the Salisbury screen mode, a localized strong light field is generated that fully overlaps with the detection material in space, thereby improving the light absorption rate and quantum efficiency of the two-dimensional material on the basis of achieving high extinction ratio polarization discrimination.

[0069] (3) There is no need to use independent optical elements. It has high integration, is easy to prepare, has a small size, high stability and reliability, and has extremely high universality. For example, the size of the metal grating antenna can be changed to arbitrarily adjust the target detection wavelength of the detector; the metal grating antenna array 8 can be arbitrarily changed to other metal optical micro-nano structures to achieve the detection of the required polarization state (such as circularly polarized light); the detection channel material can also be changed to achieve the response mode that adapts to photovoltaic response, thermal electron injection and other self-driven types.

[0070] The technical features of the above embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0071] This document uses specific examples to illustrate the principles and implementation methods of the present invention. The above examples are only intended to help understand the method and core concept of the present invention. At the same time, those skilled in the art will find that the specific implementation methods and application scopes may vary based on the concept of the present invention. In summary, the contents of this specification should not be construed as limiting the present invention.

Claims

1. An integrated dynamically controlled high selectivity infrared polarization detector, characterized in that: The integrated dynamically controlled high-selectivity infrared polarization detector comprises: from bottom to top a substrate layer, a metal reflective layer, a dielectric layer, and an electrode layer; the integrated dynamically controlled high-selectivity infrared polarization detector further comprises a two-dimensional material layer, which is disposed on the electrode layer or between the dielectric layer and the electrode layer; The electrode layer includes a source, a drain, a metal two-dimensional metamaterial integrated in the source, and a metal two-dimensional metamaterial integrated in the drain; the source and the drain are symmetrically arranged, and a channel is provided between the source and the drain; the two-dimensional material layer spans the channel and electrically connects the source and the drain; the metal two-dimensional metamaterial integrated in the source and the metal two-dimensional metamaterial integrated in the drain are mirror images of each other's metal grating antenna arrays; the metal grating antenna array is fused with an electrode at one end, and each metal grid bar, the dielectric spacer layer, and the metal bottom surface below it together constitute an optical microstrip antenna; wherein the metal grid bar is a grating in the metal grating antenna array; the combination of the metal grid bar, the dielectric spacer layer, and the metal bottom surface forms a Salisbury screen mode structure, and when the optical microstrip antenna resonates with the incident light, an enhanced local field is generated in the dielectric layer, and the two-dimensional material above the dielectric layer will strongly interact with the local light field, and its absorption rate will be significantly enhanced; When the integrated dynamically controlled high-selectivity infrared polarization detector operates in a zero-bias state, the optical response comes from the photothermoelectric effect induced by the Schottky junction formed by the source and the drain and the metal two-dimensional metamaterial; the carrier concentration of the graphene at the source and the drain is configured through the metal reflective layer, and the polarization extinction ratio and direction of the photocurrent are controlled under the irradiation of linearly polarized light at any specific angle; specifically, a gate voltage is applied to the source and the drain respectively through the metal reflective layer to change the carrier concentration of the graphene, a positive gate voltage reduces the Seebeck coefficient of the graphene in the channel and increases the difference with the Seebeck coefficient of the graphene controlled by the metal antenna pinning, a negative gate voltage increases the Seebeck coefficient of the graphene in the channel and reduces the difference with the Seebeck coefficient of the graphene controlled by the metal antenna pinning, thereby changing the carrier concentration of the graphene; the photocurrent at a specific angle is close to 0 through gate control, at which time the extinction ratio approaches infinity. When the extinction ratio is -1, the photocurrent at this time is proportional to S2.

2. The integrated dynamically controlled high selectivity infrared polarization detector according to claim 1, characterized in that: The material of the substrate layer is a semiconductor process base material.

3. The integrated dynamically controlled high selectivity infrared polarization detector according to claim 1, characterized in that: The thickness of the metal reflective layer is greater than or equal to twice the skin depth of the electromagnetic wave in the metal reflective layer.

4. The integrated dynamically controlled high selectivity infrared polarization detector according to claim 1, characterized in that: The dielectric layer is a medium that is transparent in the working band.

5. The integrated dynamically controlled high selectivity infrared polarization detector according to claim 1, characterized in that: The thickness of the dielectric layer is less than a quarter of the detection wavelength.

6. The integrated dynamically controlled high selectivity infrared polarization detector according to claim 1, characterized in that: The thickness of the electrode layer is greater than or equal to twice the skin depth of the electromagnetic wave in the electrode layer.

7. A method for preparing an integrated dynamically controlled high-selectivity infrared polarization detector, for preparing the integrated dynamically controlled high-selectivity infrared polarization detector according to any one of claims 1 to 6, characterized in that: The preparation method of the integrated dynamically controlled high selectivity infrared polarization detector includes: The split gate pattern is defined on the substrate layer using UV lithography, and metal is deposited using electron beam evaporation, and the metal reflective layer is obtained through lift-off technology; growing a dielectric layer on the surface of the metal reflective layer by using atomic layer deposition, electron beam evaporation and magnetron sputtering technology; Using electron beam lithography to define a pattern on the surface of the dielectric layer, and using electron beam evaporation to deposit metal, and using lift-off technology to obtain an electrode layer; Obtaining 2D materials; The two-dimensional material is transferred onto the electrode layer or between the dielectric layer and the electrode layer using a dry transfer technology.

8. The method for preparing an integrated dynamically controlled high selectivity infrared polarization detector according to claim 7, characterized in that: Obtaining 2D materials, including: Two-dimensional materials are obtained from single crystal samples using mechanical exfoliation or growth methods.

9. The method for preparing an integrated dynamically controlled high selectivity infrared polarization detector according to claim 8, characterized in that: The growth means is chemical vapor deposition or physical vapor deposition.

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