Display panel, display device and manufacturing method of display panel

Abstract

The embodiment of the invention provides a display panel, a display device and a manufacturing method of the display panel. The display panel comprises a substrate, a light-emitting layer, a packaging layer and a photosensitive layer, the light-emitting layer is arranged on one side of the substrate and comprises a plurality of light-emitting units; the packaging layer is arranged on one side, deviating from the substrate, of the light-emitting layer and used for packaging the light-emitting units; the photosensitive layer is arranged on the side, away from the substrate, of the packaging layer and comprises a photosensitive circuit and a photosensitive device which are sequentially arranged along the side, away from the substrate, of the packaging layer, and the photosensitive circuit is used for driving the photosensitive device to sense light. The photosensitive circuit and the photosensitive device are arranged on the side, away from the substrate, of the packaging layer, the photosensitive circuit, the photosensitive device and the light-emitting layer are arranged on different layers, and therefore the influence of the photosensitive circuit and the photosensitive device on the arrangement density of the light-emitting units is reduced, the resolution ratio of the display panel can be improved, and the use performance of the display panel is improved.

Description

Technical Field

[0001] The present application relates to the technical field of display devices, and in particular to a display panel, a display device, and a method for manufacturing a display panel. Background Art

[0002] Organic Light Emitting Diode (OLED) and flat-panel display devices based on technologies such as Light Emitting Diode (LED) have been widely used in various consumer electronic products such as mobile phones, televisions, laptops, and desktop computers due to their advantages such as high image quality, power saving, thin body, and wide range of applications, becoming the mainstream display device.

[0003] However, the performance of current display products needs to be improved. Summary of the Invention

[0004] The embodiments of the present application provide a display panel, a display device, and a method for manufacturing a display panel, aiming to improve the process performance of the display panel.

[0005] An embodiment of the first aspect of the present application provides a display panel, comprising: a substrate, a light-emitting layer, an encapsulation layer and a photosensitive layer; the light-emitting layer is arranged on one side of the substrate, and the light-emitting layer includes a plurality of light-emitting units; the encapsulation layer is arranged on the side of the light-emitting layer away from the substrate and is used to encapsulate the light-emitting units; the photosensitive layer is arranged on the side of the encapsulation layer away from the substrate, and the photosensitive layer includes a photosensitive circuit and a photosensitive device arranged in sequence along a direction away from the substrate, and the photosensitive circuit is used to drive the photosensitive device to sense light.

[0006] According to an embodiment of the present application, the orthographic projection of the photosensitive device on the substrate does not overlap with the orthographic projection of the light-emitting unit on the substrate.

[0007] According to an embodiment of the present application, the orthographic projection of the photosensitive circuit on the substrate does not overlap with the orthographic projection of the light-emitting unit on the substrate.

[0008] According to an embodiment of the present application, the photosensitive circuit includes a first transistor, the photosensitive device is electrically connected to the first transistor, and the orthographic projection of the photosensitive device on the substrate at least partially overlaps with the orthographic projection of the first transistor on the substrate.

[0009] According to an embodiment of the present application, the orthographic projection of the first transistor on the substrate is located within the orthographic projection of the photosensitive device on the substrate.

[0010] In an embodiment of the present application, the first transistor includes a substrate, a first semiconductor layer, a gate, and a source-drain electrode layer; the first semiconductor layer is disposed on one side of the substrate, and the first semiconductor layer includes a channel region and conductive regions at both ends of the channel region; the gate is disposed on the side of the first semiconductor layer away from the substrate; the source-drain electrode layer is disposed on the side of the substrate away from the substrate, and the source-drain electrode layer includes source-drain electrodes, and the source-drain electrodes are electrically connected to the conductive regions.

[0011] In an embodiment of the present application, the material of the first semiconductor layer includes an organic semiconductor material.

[0012] In an embodiment of the present application, the material of the source-drain electrodes includes indium tin oxide.

[0013] In an embodiment of the present application, the material of the gate includes molybdenum.

[0014] In an embodiment of the present application, the photosensitive circuit further includes a gate insulating layer, the gate insulating layer is disposed between the first semiconductor layer and the gate, and the material of the gate insulating layer includes silicon oxide.

[0015] In an embodiment of the present application, the photosensitive layer further includes a light-emitting component, the light-emitting component and the photosensitive device are disposed on the same layer, and the photosensitive layer further includes a light-emitting circuit for driving the light-emitting component, and the light-emitting circuit is disposed on the same layer as the photosensitive circuit.

[0016] In an embodiment of the present application, the light-emitting circuit includes a second transistor, and the second transistor is electrically connected to the light-emitting component to drive the light-emitting component to emit light.

[0017] In an embodiment of the present application, the light-emitting component includes an organic light-emitting material, and the light-emitting component is used to emit near-infrared light.

[0018] In an embodiment of the present application, the orthographic projection of the light-emitting component on the substrate and the orthographic projection of the second transistor on the substrate at least partially overlap.

[0019] In an embodiment of the present application, the orthographic projection of the second transistor on the substrate is located within the orthographic projection of the light-emitting component on the substrate.

[0020] In an embodiment of the present application, the emission wavelength of the light-emitting component is between 780 nm and 2526 nm.

[0021] In an embodiment of the present application, the second transistor includes a second semiconductor layer, and the material of the second semiconductor layer includes an organic semiconductor material

[0022] In an embodiment of the present application, the photosensitive layer further includes an insulating layer, the insulating layer is disposed between the photosensitive device and the photosensitive circuit, and the insulating layer is also disposed between the light-emitting component and the light-emitting circuit; the photosensitive device is connected to the photosensitive circuit through a via, and the light-emitting component is connected to the light-emitting circuit through a via.

[0023] In an embodiment of the present application, the display panel further includes a light filtering layer disposed on a side of the encapsulation layer away from the substrate. The light filtering layer includes a light shielding portion, a light filtering opening formed by surrounding the light shielding portion, and a light filtering unit located within the light filtering opening. The orthographic projection of the light filtering unit on the substrate overlaps at least partially with the orthographic projection of the light emitting unit on the substrate.

[0024] In an embodiment of the present application, the light filtering layer is disposed between the encapsulation layer and the photosensitive layer, and the orthographic projection of the photosensitive device on the substrate overlaps at least partially with the orthographic projection of the light shielding portion on the substrate.

[0025] In an embodiment of the present application, the orthographic projection of the photosensitive circuit on the substrate overlaps at least partially with the orthographic projection of the light shielding portion on the substrate.

[0026] In an embodiment of the present application, the orthographic projection of the photosensitive device on the substrate is located within the orthographic projection of the light shielding portion on the substrate.

[0027] In an embodiment of the present application, the orthographic projection of the photosensitive circuit on the substrate is located within the orthographic projection of the light shielding portion on the substrate.

[0028] In an embodiment of the present application, the light filtering layer is disposed between the encapsulation layer and the light emitting circuit, and the orthographic projection of the light emitting assembly on the substrate overlaps at least partially with the orthographic projection of the light shielding portion on the substrate.

[0029] In an embodiment of the present application, the orthographic projection of the light emitting assembly on the substrate is located within the orthographic projection of the light shielding portion on the substrate.

[0030] In an embodiment of the present application, the orthographic projection of the light emitting circuit on the substrate overlaps at least partially with the orthographic projection of the light shielding portion on the substrate.

[0031] In an embodiment of the present application, the orthographic projection of the light emitting circuit on the substrate is located within the orthographic projection of the light shielding portion on the substrate.

[0032] An embodiment of the second aspect of the present application further provides a display device including the display panel in any one of the embodiments of the first aspect above.

[0033] An embodiment of the third aspect of the present application further provides a manufacturing method of a display panel, including:

[0034] Forming a light emitting layer on one side of the substrate, the light emitting layer including a plurality of light emitting units.

[0035] Forming an encapsulation layer on a side of the light emitting layer away from the substrate.

[0036] Forming a photosensitive circuit on a side of the encapsulation layer away from the substrate.

[0037] Forming a photosensitive device on a side of the photosensitive circuit away from the substrate.

[0038] In the embodiment of the present application, in the step of forming a photosensitive circuit on the side of the encapsulation layer away from the substrate, it includes:

[0039] Form a substrate on the side of the encapsulation layer away from the substrate.

[0040] Form a first semiconductor layer on the side of the substrate away from the substrate, wherein the process temperature for forming the first semiconductor layer is less than 85 °C.

[0041] Form a gate on the side of the first semiconductor layer away from the substrate, wherein the process temperature for forming the gate is less than 50 °C.

[0042] Form a source-drain electrode layer on the side of the substrate away from the substrate. The source-drain electrode layer includes source-drain electrodes, and the source-drain electrodes are electrically connected to the first semiconductor layer, wherein the process temperature for forming the source-drain electrodes is less than 50 °C.

[0043] In the embodiment of the present application, form a gate insulating layer between the first semiconductor layer and the gate, wherein the process temperature for forming the gate insulating layer is less than 85 °C.

[0044] In the embodiment of the present application, the encapsulation layer is disposed on the side of the light-emitting layer away from the substrate for encapsulating the light-emitting unit, thereby reducing the intrusion of water, oxygen, etc. into the light-emitting unit to improve the reliability of the light-emitting unit. The photosensitive circuit and the photosensitive device are disposed on the side of the encapsulation layer away from the substrate, and the photosensitive circuit and the photosensitive device are not on the same layer as the light-emitting layer, thereby reducing the influence of the photosensitive circuit and the photosensitive device on the arrangement density of the light-emitting units, and thus the resolution of the display panel can be improved to enhance the performance of the display panel. Description of the Drawings

[0045] By reading the following detailed description of the non-limiting embodiments with reference to the accompanying drawings, other features, objectives, and advantages of the present application will become more apparent, wherein the same or similar reference numerals denote the same or similar features.

[0046] Figure 1 is a schematic structural diagram of a display panel provided by an embodiment of the present application;

[0047] Figure 2 is a schematic structural diagram of a first transistor of a display panel provided by an embodiment of the present application;

[0048] Figure 3 is a schematic structural diagram of a first transistor of another display panel provided by an embodiment of the present application;

[0049] Figure 4 is a schematic structural diagram of another display panel provided by an embodiment of the present application;

[0050] Figure 5 is a schematic structural diagram of yet another display panel provided by an embodiment of the present application;

[0051] Figure 6 It is a flowchart of a manufacturing method of a display panel provided by an embodiment of the present application;

[0052] Figures 7 to 9 It is a schematic diagram of the process of a manufacturing method of a display panel provided by an embodiment of the present application;

[0053] Figure 10 It is a flowchart of another manufacturing method of a display panel provided by an embodiment of the present application;

[0054] Figures 11 to 13 It is a schematic diagram of the process of a manufacturing method of a photosensitive circuit provided by an embodiment of the present application.

[0055] Description of reference numerals: 100, substrate; 200, light-emitting unit; 300, encapsulation layer; 310, first encapsulation layer; 320, second encapsulation layer; 330, third encapsulation layer; 400, photosensitive layer; 410, photosensitive device; 420, photosensitive circuit; 430, first transistor; 431, substrate; 432, first semiconductor layer; 433, gate; 434, source-drain electrode; 435, gate insulating layer; 440, light-emitting component; 450, light-emitting circuit; 460, second transistor; 470, insulating layer; 500, filter layer; 510, light-shielding portion; 520, filter opening; 530, filter unit. Detailed Description of the Invention

[0056] The features and exemplary embodiments of various aspects of the present application will be described in detail below. In the following detailed description, many specific details are set forth in order to provide a thorough understanding of the present application. However, it will be apparent to those skilled in the art that the present application may be practiced without some of these specific details. The following description of the embodiments is only intended to provide a better understanding of the present application by showing examples of the present application. In the drawings and the following description, at least some of the well-known structures and technologies are not shown in order to avoid unnecessarily obscuring the present application; and, for clarity, the dimensions of some structures may be exaggerated. In addition, the features, structures, or characteristics described below may be combined in any suitable manner in one or more embodiments.

[0057] In the description of the present application, it should be noted that unless otherwise specified, the meaning of "a plurality of" is more than two; the orientation or positional relationship indicated by terms such as "upper", "lower", "left", "right", "inner", "outer", etc. is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application. In addition, terms such as "first", "second", etc. are only used for descriptive purposes and cannot be construed as indicating or implying relative importance.

[0058] The orientation terms appearing in the following description are all the directions shown in the figure, and do not limit the specific structure of the embodiments of the present application. In the description of the present application, it should also be noted that unless otherwise clearly specified and limited, the terms "installation" and "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0059] As Figure 1 shown, a display panel provided by an embodiment of the first aspect of the present application includes: a substrate 100, a light-emitting layer, a packaging layer 300, and a photosensitive layer 400. The light-emitting layer is disposed on one side of the substrate 100 and includes a plurality of light-emitting units 200; the packaging layer 300 is disposed on the side of the light-emitting layer facing away from the substrate 100 and is used to package the light-emitting units 200; the photosensitive layer 400 is disposed on the side of the packaging layer 300 facing away from the substrate 100, and the photosensitive layer 400 includes a photosensitive circuit 420 and a photosensitive device 410 sequentially disposed in the direction away from the substrate 100. The photosensitive circuit 420 is used to drive the photosensitive device 410 to sense light.

[0060] In this embodiment, the packaging layer 300 is disposed on the side of the light-emitting layer facing away from the substrate 100 to package the light-emitting units 200, thereby reducing the intrusion of water, oxygen, etc. into the light-emitting units 200 to improve the reliability of the light-emitting units 200. The photosensitive layer 400 is disposed on the side of the packaging layer 300 facing away from the substrate 100. The photosensitive layer 400 includes a photosensitive circuit 420 and a photosensitive device 410 sequentially disposed in the direction away from the substrate 100. The photosensitive circuit 420 is used to drive the photosensitive device 410 to sense light. The photosensitive device 410 can convert the optical signal of the reflected light formed by the light-emitting units 200 irradiating the living body into an electrical signal, thereby realizing photosensitive functions such as biological information recognition. The photosensitive circuit 420 and the photosensitive device 410 are disposed on the side of the packaging layer 300 facing away from the substrate 100, and the photosensitive circuit 420 and the photosensitive device 410 are not disposed on the same layer as the light-emitting layer, thereby reducing the influence of the photosensitive circuit 420 and the photosensitive device 410 on the arrangement density of the light-emitting units 200, and thus improving the resolution of the display panel to improve the performance of the display panel.

[0061] As Figure 1 shown, in some alternative embodiments, the orthographic projection of the photosensitive device 410 on the substrate 100 does not overlap with the orthographic projection of the light-emitting unit 200 on the substrate 100.

[0062] In these alternative embodiments, the non-overlap of the orthographic projection of the photosensitive device 410 on the substrate 100 and the orthographic projection of the light-emitting unit 200 on the substrate 100 can reduce the influence of the photosensitive device 410 on the light emission of the light-emitting unit 200, thereby improving the display effect of the display panel.

[0063] As Figure 1 shown, in some alternative embodiments, the orthographic projection of the photosensitive circuit 420 on the substrate 100 does not overlap with the orthographic projection of the light-emitting unit 200 on the substrate 100.

[0064] In these alternative embodiments, the non-overlap of the orthographic projection of the photosensitive circuit 420 on the substrate 100 and the orthographic projection of the light-emitting unit 200 on the substrate 100 can reduce the influence of the photosensitive circuit 420 on the light emission of the light-emitting unit 200, thereby improving the display effect of the display panel.

[0065] Optionally, as Figure 1 shown, the photosensitive circuit 420 includes a first transistor 430. The photosensitive device 410 is electrically connected to the first transistor 430. The orthographic projection of the photosensitive device 410 on the substrate 100 at least partially overlaps with the orthographic projection of the first transistor 430 on the substrate 100; the photosensitive device 410 is electrically connected to the first transistor 430, and the first transistor 430 is used to drive the photosensitive device 410 to sense light. The orthographic projection of the photosensitive device 410 on the substrate 100 at least partially overlaps with the orthographic projection of the first transistor 430 on the substrate 100. The photosensitive device 410 and the first transistor 430 are stacked, reducing the light blocking of the light-emitting unit 200 by the photosensitive device 410 and the first transistor 430. Moreover, the stacked arrangement of the photosensitive device 410 and the first transistor 430 can reduce the reflection of external light by the photosensitive device 410 and the first transistor 430, improving the display effect of the display panel.

[0066] Optionally, as Figure 1 shown, the orthographic projection of the first transistor 430 on the substrate 1 is within the orthographic projection of the photosensitive device 410 on the substrate 100, and the overlapping area of the first transistor 430 and the photosensitive device 410 is the largest, thereby reducing the influence of the photosensitive device 410 on the light emission of the light-emitting unit 200.

[0067] As Figure 2 and Figure 3As shown, in some alternative embodiments, the first transistor 430 includes a substrate 431, a first semiconductor layer 432, a gate 433, and a source-drain electrode layer. The first semiconductor layer 432 is disposed on one side of the substrate 431. The first semiconductor layer 432 includes a channel region and conductive regions at both ends of the channel region. The gate 433 is disposed on the side of the first semiconductor layer 432 facing away from the substrate 431. The source-drain electrode layer is disposed on the side of the substrate 431 facing away from the substrate 100. The source-drain electrode layer includes a source-drain electrode 434, and the source-drain electrode 434 is electrically connected to the conductive region.

[0068] In these alternative embodiments, the photosensitive device 410 is electrically connected to the source-drain electrode 434 so that the first transistor 430 drives the photosensitive device 410 to sense light. Optionally, the material of the first semiconductor layer 432 includes an organic semiconductor material, and the first transistor 430 is an organic thin-film transistor, so that the process temperature for forming the first semiconductor layer 432 is lower than 85 degrees Celsius, reducing the probability of damaging the light-emitting unit 200 due to too high a process temperature during the preparation of the first semiconductor layer 432. Optionally, the material of the source-drain electrode 434 includes indium tin oxide, so that the process temperature for forming the source-drain electrode 434 is lower than 50 degrees Celsius, reducing the probability of damaging the light-emitting unit 200 due to too high a process temperature during the preparation of the source-drain electrode 434. Optionally, the material of the gate 433 includes molybdenum, so that the process temperature for forming the gate 433 is lower than 50 degrees Celsius, reducing the probability of damaging the light-emitting unit 200 due to too high a process temperature during the preparation of the gate 433.

[0069] Optionally, as Figure 2 and Figure 3 shown, the photosensitive circuit 420 further includes a gate insulating layer 435. The gate insulating layer 435 is disposed between the first semiconductor layer 432 and the gate 433. The material of the gate insulating layer 435 includes silicon oxide, so that the process temperature for forming the gate insulating layer 435 is lower than 85 degrees Celsius, reducing the probability of damaging the light-emitting unit 200 due to too high a process temperature during the preparation of the gate insulating layer 435.

[0070] Optionally, as Figure 3 shown, the first semiconductor layer 432 is disposed on the side of the source-drain electrode layer facing away from the substrate 431. The first semiconductor layer 432 covers the source-drain electrode 434, and the source-drain electrode 434 is electrically connected to the conductive region.

[0071] Optionally, as Figure 2 shown, the source-drain electrode layer is disposed on the side of the gate at 433 facing away from the substrate 431, and the source-drain electrode 434 is electrically connected to the conductive region.

[0072] Optionally, as Figure 1As shown, the encapsulation layer 300 includes a first encapsulation layer 310, a second encapsulation layer 320, and a third encapsulation layer 330, which are sequentially arranged in a direction away from the substrate 100. Optionally, the first encapsulation layer 310 includes an inorganic material. Optionally, the second encapsulation layer 320 includes an organic material. Optionally, the third encapsulation layer 330 includes an inorganic material.

[0073] Optionally, the substrate 100 may be made of polyimide (PI) material. When the substrate 100 is made of polyimide material, it is a flexible substrate, so that the substrate 100 can be used to manufacture a flexible display panel.

[0074] Optionally, the substrate 100 includes a driving circuit layer for driving the light-emitting unit 200 to emit light; the driving circuit layer includes a transistor and a storage capacitor. The transistor includes a semiconductor portion, a gate 433, a source electrode, and a drain electrode. The driving circuit layer can be any of a 2T1C circuit, a 7T1C circuit, a 7T2C circuit, or a 9T1C circuit. Herein, a "2T1C circuit" refers to a circuit including two transistors and one capacitor, and other "7T1C circuits," "7T2C circuits," "9T1C circuits," and so on.

[0075] like Figure 4 As shown, in some optional embodiments, the photosensitive layer 400 also includes a light-emitting component 440, and the light-emitting component 440 and the photosensitive device 410 are arranged on the same layer. The photosensitive layer 400 also includes a light-emitting circuit 450 for driving the light-emitting component 440, and the light-emitting circuit 450 and the photosensitive circuit 420 are arranged on the same layer.

[0076] In these optional embodiments, the light emitting assembly 440 is configured to emit light of a first color, and the light sensing device 410 is configured to detect the first color light. The light emitted by the light emitting assembly 440 has a different wavelength than the light emitted by the light emitting unit 200, thereby reducing the impact of the light emitting assembly 440 on the display effect of the display panel. The light emitted by the light emitting assembly 440 is reflected back to the light sensing device 410 after reaching the user. The light sensing device 410 converts the optical signal into an electrical signal to realize the light sensing function.

[0077] Optionally, the light emitting component 440 includes an organic light emitting material and is an OLED light source. The light emitting component 440 is used to emit near-infrared light, thereby reducing the light of the light emitting component 440 from affecting the display effect.

[0078] Optional, such as Figure 4As shown, the light-emitting circuit 450 includes a second transistor 460. The second transistor 460 is electrically connected to the light-emitting component 440 to drive the light-emitting component 440 to emit light. Optionally, the orthographic projection of the light-emitting component 440 on the substrate 100 and the orthographic projection of the second transistor 460 on the substrate 100 at least partially overlap, thereby reducing the influence of the light-emitting component 440 and the second transistor 460 on the light output of the light-emitting unit 200.

[0079] Optionally, the second transistor 460 is made of the same material as the first transistor 430, so that the second transistor 460 can be formed in the same manufacturing process as the first transistor 430. Moreover, the manufacturing process temperature of the second transistor 460 is lower than 85 °C, thereby reducing the damage to the light-emitting unit 200 during the manufacturing process of the second transistor 460.

[0080] Optionally, the second transistor 460 includes a second semiconductor layer. The material of the second semiconductor layer includes an organic semiconductor material, and the second transistor 460 is an organic thin-film transistor, so that the manufacturing process temperature for forming the second semiconductor layer is lower than 85 degrees Celsius, reducing the probability of damaging the light-emitting unit 200 due to too high process temperature during the preparation of the second semiconductor layer.

[0081] Optionally, as Figure 4 shown, the orthographic projection of the second transistor 460 on the substrate 100 is located within the orthographic projection of the light-emitting component 440 on the substrate 100, and the overlapping area between the second transistor 460 and the light-emitting component 440 is the largest, thereby reducing the influence of the light-emitting component 440 on the light output of the light-emitting unit 200.

[0082] Optionally, the emission wavelength of the light-emitting component 440 is in the range of 780 nm to 2526 nm. The light emitted by the light-emitting component 440 is near-infrared light, which can illuminate the object to be detected while being invisible to the human eye, thereby reducing the influence of the light-emitting component 440 on the display effect of the display panel.

[0083] As Figure 4 shown, in some alternative embodiments, the photosensitive layer 400 further includes an insulating layer 470. The insulating layer 470 is disposed between the photosensitive device 410 and the photosensitive circuit 420, and the insulating layer 470 is also disposed between the light-emitting component 440 and the light-emitting circuit 450; the photosensitive device 410 is connected to the photosensitive circuit 420 through a via, and the light-emitting component 440 is connected to the light-emitting circuit 450 through a via.

[0084] In these alternative embodiments, the insulating layer 470 is located between the photosensitive device 410 and the photosensitive circuit 420, and the insulating layer 470 is located between the light-emitting component 440 and the light-emitting circuit 450, thereby preventing short circuits from occurring in the photosensitive device 410, the photosensitive circuit 420, the light-emitting component 440, and the light-emitting circuit 450. The photosensitive device 410 is connected to the photosensitive circuit 420 through vias provided on the insulating layer 470, and the light-emitting component 440 is connected to the light-emitting circuit 450 through vias provided on the insulating layer 470.

[0085] As Figure 5 shown, in some alternative embodiments, the display panel further includes a filter layer 500. The filter layer 500 is disposed on the side of the encapsulation layer 300 away from the substrate 100. The filter layer 500 includes a light-shielding portion 510, a filter opening 520 formed by enclosing the light-shielding portion 510, and a filter unit 530 located within the filter opening 520. The orthographic projection of the filter unit 530 on the substrate 100 at least partially overlaps with the orthographic projection of the light-emitting unit 200 on the substrate 100.

[0086] In these alternative embodiments, the filter unit 530 is located within the filter opening 520, and the light-shielding portion 510 can reduce light crosstalk formed between the emitted light of the light-emitting units 200 among the respective filter units 530, thereby improving the filtering effect of the filter units 530. The orthographic projection of each filter unit 530 on the substrate 100 at least partially overlaps with the orthographic projection of each light-emitting unit 200 on the substrate 100, so that the emitted light of the light-emitting unit 200 can be emitted after being filtered by the filter unit 530.

[0087] Optionally, as Figure 5 shown, the filter layer 500 is disposed between the encapsulation layer 300 and the photosensitive layer 400. The orthographic projection of the photosensitive device 410 on the substrate 100 at least partially overlaps with the orthographic projection of the light-shielding portion 510 on the substrate 100. The filter layer 500 is disposed between the encapsulation layer 300 and the photosensitive layer 400, thereby reducing the distance between the photosensitive layer 400 and the light-emitting side of the display panel and improving the sensitivity of the photosensitive device 410. The orthographic projection of the photosensitive device 410 on the substrate 100 at least partially overlaps with the orthographic projection of the light-shielding portion 510 on the substrate 100, and the orthographic projection of the photosensitive circuit 420 on the substrate 100 at least partially overlaps with the orthographic projection of the light-shielding portion 510 on the substrate 100, thereby reducing the influence of the photosensitive device 410 and the photosensitive circuit 420 on the light emission of the light-emitting unit 200.

[0088] Optionally, as Figure 5 shown, the orthographic projection of the photosensitive device 410 on the substrate 100 is located within the orthographic projection of the light-shielding portion 510 on the substrate 100, thereby reducing the influence of the photosensitive device 410 on the light emission of the light-emitting unit 200.

[0089] Optionally, as Figure 5As shown, the orthographic projection of the photosensitive circuit 420 on the substrate 100 is located within the orthographic projection of the light-shielding portion 510 on the substrate 100, thereby reducing the influence of the photosensitive circuit 420 on the light emission of the light-emitting unit 200.

[0090] Optionally, as Figure 5 shown, the light-emitting component 440 and the light-emitting circuit 450 are located on the side of the filter layer 500 away from the substrate 100, and the orthographic projection of the light-emitting component 440 on the substrate 100 at least partially overlaps with the orthographic projection of the light-shielding portion 510 on the substrate 100, thereby reducing the influence of the light-emitting component 440 on the light emission of the light-emitting unit 200.

[0091] Optionally, as Figure 5 shown, the orthographic projection of the light-emitting circuit 450 on the substrate 100 at least partially overlaps with the orthographic projection of the light-shielding portion 510 on the substrate 100, thereby reducing the influence of the light-emitting circuit 450 on the light emission of the light-emitting unit 200.

[0092] Optionally, as Figure 5 shown, the orthographic projection of the light-emitting component 440 on the substrate 100 is located within the orthographic projection of the light-shielding portion 510 on the substrate 100, thereby reducing the influence of the light-emitting component 440 on the light emission of the light-emitting unit 200.

[0093] Optionally, as Figure 5 shown, the orthographic projection of the light-emitting circuit 450 on the substrate 100 is located within the orthographic projection of the light-shielding portion 510 on the substrate 100, thereby reducing the influence of the light-emitting circuit 450 on the light emission of the light-emitting unit 200. An embodiment of the second aspect of the present application further provides a display device, including the display panel of any one of the above first aspect embodiments. Since the display device provided by the embodiment of the second aspect of the present application includes the display panel of any one of the above first aspect embodiments, the display device provided by the embodiment of the second aspect of the present application has the beneficial effects of the display panel of any one of the above first aspect embodiments, which will not be elaborated herein.

[0094] The display device in the embodiments of the present application includes, but is not limited to, devices with a display function such as mobile phones, personal digital assistants (PDAs), tablet computers, e-books, televisions, access control devices, smart landline phones, consoles, etc.

[0095] An embodiment of the third aspect of the present application further provides a manufacturing method of a display panel, as Figure 6 shown, including the following steps:

[0096] Step S01: As Figure 7 shown, form a light-emitting layer on one side of the substrate 100, and the light-emitting layer includes a plurality of light-emitting units 200.

[0097] Step S02: AsFigure 8 As shown, an encapsulation layer 300 is formed on the side of the light-emitting layer facing away from the substrate 100.

[0098] Step S03: As Figure 9 shown, a photosensitive circuit 420 is formed on the side of the encapsulation layer 300 facing away from the substrate 100.

[0099] Step S04: As Figure 1 shown, a photosensitive device 410 is formed on the side of the photosensitive circuit 420 facing away from the substrate 100.

[0100] In this embodiment, the encapsulation layer 300 is disposed on the side of the light-emitting layer facing away from the substrate 100 to encapsulate the light-emitting unit 200, thereby reducing the intrusion of water, oxygen, etc. into the light-emitting unit 200 to improve the reliability of the light-emitting unit 200. The photosensitive layer 400 is disposed on the side of the encapsulation layer 300 facing away from the substrate 100. The photosensitive circuit 420 is used to drive the photosensitive device 410 to sense light. The photosensitive device 410 can convert the optical signal of the reflected light formed by the light-emitting unit 200 irradiating the living body into an electrical signal, thereby realizing photosensitive functions such as biological information recognition. The photosensitive circuit 420 and the photosensitive device 410 are disposed on the side of the encapsulation layer 300 facing away from the substrate 100, and the photosensitive circuit 420 and the photosensitive device 410 are not disposed on the same layer as the light-emitting layer, thereby reducing the influence of the photosensitive circuit 420 and the photosensitive device 410 on the arrangement density of the light-emitting unit 200, and thus improving the resolution of the display panel to improve the performance of the display panel.

[0101] In some alternative embodiments, in step S03, as Figure 10 shown, it includes:

[0102] Step S031: As Figure 11 shown, a substrate 431 is formed on the side of the encapsulation layer 300 facing away from the substrate 100.

[0103] Step S032: As Figure 11 shown, a first semiconductor layer 432 is formed on the side of the substrate 431 facing away from the substrate 100, wherein the process temperature for forming the first semiconductor layer 432 is less than 85 °C.

[0104] Step S033: As Figure 12 shown, a gate 433 is formed on the side of the first semiconductor layer 432 facing away from the substrate 100, wherein the process temperature for forming the gate 433 is less than 50 °C.

[0105] Step S034: As Figure 13 shown, a source-drain electrode layer is formed on the side of the substrate 431 facing away from the substrate 100. The source-drain electrode layer includes a source-drain electrode 434, and the source-drain electrode 434 is electrically connected to the first semiconductor layer 432, wherein the process temperature for forming the source-drain electrode 434 is less than 50 °C.

[0106] In these alternative embodiments, the first semiconductor layer 432, the gate 433, and the source-drain electrode layer form the first thin-film transistor for driving the photosensitive device 410. The process temperature for coating the semiconductor material and patterning to form the first semiconductor layer 432 is less than 85°C, the process temperature for evaporating and patterning to form the gate 433 is less than 50°C, and the process temperature for evaporating and patterning to form the source-drain electrode 434 is less than 50°C, which can reduce the probability of damaging the light-emitting unit 200 due to excessive process temperature during the preparation of the first thin-film transistor.

[0107] Optionally, as Figure 3 shown, the source-drain electrode layer is formed between the first semiconductor layer 432 and the substrate 431.

[0108] Optionally, as Figure 2 shown, the source-drain electrode layer is formed on the side of the gate 433 away from the substrate 431.

[0109] Optionally, in step S03, it further includes: as Figure 11 shown, a gate insulating layer 435 is formed between the first semiconductor layer 432 and the gate 433. Among them, the process temperature for forming the gate insulating layer 435 is less than 85°C, thereby reducing the probability of damaging the light-emitting unit 200 due to excessive process temperature during the preparation of the gate insulating layer 435.

[0110] Although the present application has been described with reference to the preferred embodiments, various improvements can be made to it and its components can be replaced with equivalents without departing from the scope of the present application. In particular, as long as there is no structural conflict, the technical features mentioned in each embodiment can be combined in any way. The present application is not limited to the specific embodiments disclosed in the text, but includes all technical solutions falling within the scope of the claims.

Claims

1. A display panel, characterized in that, Comprising: A substrate; A light-emitting layer disposed on one side of the substrate, the light-emitting layer including a plurality of light-emitting units; A packaging layer disposed on the side of the light-emitting layer facing away from the substrate and for packaging the light-emitting units; A photosensitive layer disposed on the side of the packaging layer facing away from the substrate, the photosensitive layer including a photosensitive circuit and a photosensitive device sequentially arranged in a direction away from the substrate, and the photosensitive circuit being used to drive the photosensitive device to sense light.

2. The display panel according to claim 1, wherein The orthographic projection of the photosensitive device on the substrate does not overlap with the orthographic projection of the light-emitting unit on the substrate.

3. The display panel according to claim 1, characterized in that, The orthographic projection of the photosensitive circuit on the substrate does not overlap with the orthographic projection of the light-emitting unit on the substrate; Preferably, the photosensitive circuit includes a first transistor, the photosensitive device is electrically connected to the first transistor, and the orthographic projection of the photosensitive device on the substrate at least partially overlaps with the orthographic projection of the first transistor on the substrate; Preferably, the orthographic projection of the first transistor on the substrate is located within the orthographic projection of the photosensitive device on the substrate.

4. The display panel according to claim 3, characterized in that, The first transistor includes A substrate; A first semiconductor layer disposed on one side of the substrate, the first semiconductor layer including a channel region and conductive regions at both ends of the channel region; A gate disposed on the side of the first semiconductor layer facing away from the substrate; A source-drain electrode layer disposed on the side of the substrate facing away from the substrate, the source-drain electrode layer including source-drain electrodes, and the source-drain electrodes being electrically connected to the conductive regions; Preferably, the material of the first semiconductor layer includes an organic semiconductor material; Preferably, the material of the source-drain electrodes includes indium tin oxide; Preferably, the material of the gate includes molybdenum; Preferably, the photosensitive circuit further includes a gate insulating layer disposed between the first semiconductor layer and the gate, and the material of the gate insulating layer includes silicon oxide.

5. The display panel according to claim 1, wherein The photosensitive layer further includes a light-emitting component, the light-emitting component and the photosensitive device are disposed on the same layer, the photosensitive layer further includes a light-emitting circuit for driving the light-emitting component, and the light-emitting circuit is disposed on the same layer as the photosensitive circuit; Preferably, the light-emitting circuit includes a second transistor, and the second transistor is electrically connected to the light-emitting component to drive the light-emitting component to emit light; Preferably, the light-emitting component includes an organic light-emitting material, and the light-emitting component is used to emit near-infrared light; Preferably, the orthographic projection of the light-emitting component on the substrate at least partially overlaps with the orthographic projection of the second transistor on the substrate; Preferably, the orthographic projection of the second transistor on the substrate is located within the orthographic projection of the light-emitting component on the substrate; Preferably, the emission wavelength of the light-emitting component is between 780 nm and 2526 nm; Preferably, the second transistor includes a second semiconductor layer, and the material of the second semiconductor layer includes an organic semiconductor material.

6. The display panel according to claim 5, wherein The photosensitive layer further includes an insulating layer disposed between the photosensitive device and the photosensitive circuit, and the insulating layer is also disposed between the light-emitting component and the light-emitting circuit; the photosensitive device is connected to the photosensitive circuit through a via hole, and the light-emitting component is connected to the light-emitting circuit through a via hole.

7. The display panel according to claim 5, wherein The display panel further includes a filter layer disposed on a side of the encapsulation layer away from the substrate. The filter layer includes a light-shielding portion, a filter opening formed by enclosing the light-shielding portion, and a filter unit located within the filter opening. A positive projection of the filter unit on the substrate at least partially overlaps with a positive projection of the light-emitting unit on the substrate. Preferably, the filter layer is disposed between the encapsulation layer and the photosensitive layer, and a positive projection of the photosensitive device on the substrate at least partially overlaps with a positive projection of the light-shielding portion on the substrate. Preferably, a positive projection of the photosensitive circuit on the substrate at least partially overlaps with a positive projection of the light-shielding portion on the substrate. Preferably, a positive projection of the photosensitive device on the substrate is located within a positive projection of the light-shielding portion on the substrate. Preferably, a positive projection of the photosensitive circuit on the substrate is located within a positive projection of the light-shielding portion on the substrate. Preferably, the filter layer is disposed between the encapsulation layer and the light-emitting circuit, and a positive projection of the light-emitting assembly on the substrate at least partially overlaps with a positive projection of the light-shielding portion on the substrate. Preferably, a positive projection of the light-emitting assembly on the substrate is located within a positive projection of the light-shielding portion on the substrate. Preferably, a positive projection of the light-emitting circuit on the substrate at least partially overlaps with a positive projection of the light-shielding portion on the substrate. Preferably, a positive projection of the light-emitting circuit on the substrate is located within a positive projection of the light-shielding portion on the substrate.

8. A display device, characterized in that, Including the display panel according to any one of claims 1-7.

9. A manufacturing method of a display panel, characterized in that, Including: Forming a light-emitting layer on one side of the substrate, the light-emitting layer including a plurality of light-emitting units; Forming an encapsulation layer on a side of the light-emitting layer away from the substrate; Forming a photosensitive circuit on a side of the encapsulation layer away from the substrate; Forming a photosensitive device on a side of the photosensitive circuit away from the substrate.

10. The manufacturing method according to claim 9, characterized in that, In the step of forming the photosensitive circuit on the side of the encapsulation layer away from the substrate, it includes: Forming a substrate on the side of the encapsulation layer away from the substrate; Forming a first semiconductor layer on a side of the substrate away from the substrate, wherein a process temperature for forming the first semiconductor layer is less than 85 °C; Forming a gate on a side of the first semiconductor layer away from the substrate, wherein a process temperature for forming the gate is less than 50 °C; Forming a source-drain electrode layer on a side of the substrate away from the substrate, the source-drain electrode layer including source-drain electrodes, and the source-drain electrodes being electrically connected to the first semiconductor layer, wherein a process temperature for forming the source-drain electrodes is less than 50 °C; Preferably, forming a gate insulating layer between the first semiconductor layer and the gate, wherein A process temperature for forming the gate insulating layer is less than 85 °C.

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