Scattering parameter measurement method and device of routing device, storage medium and electronic equipment

Abstract

The invention discloses a scattering parameter measurement method and device of a routing device, a storage medium and electronic equipment, and the method comprises the steps: obtaining a first scattering parameter, which is a scattering parameter of a first lead whose two ends are respectively bonded with a first bonding pad and a second bonding pad; obtaining a second scattering parameter, the second scattering parameter being a total scattering parameter of a pair of target devices and a second lead connecting the pair of target devices, the pair of target devices being separately arranged on the first pad and the second pad, and the pair of target devices being arranged at an interval in axial symmetry; calculating a third scattering parameter based on the first scattering parameter, the second scattering parameter and a de-embedding algorithm; and calculating the scattering parameter of the target device based on the third scattering parameter. According to the invention, the influence caused by the bonding wire introduced by the routing device in the measurement result can be eliminated, and the measurement accuracy is remarkably improved.

Description

Technical Field

[0001] The present application belongs to the field of radio frequency testing technology, and specifically relates to a method, device, storage medium and electronic equipment for measuring scattering parameters of a wire bonding device. Background Art

[0002] In the field of RF, microwave, and high-frequency integrated circuits, measuring the scattering parameters of wire-bonded components, such as chips and RF modules, is a key step in evaluating their high-frequency performance. Vector network analyzers are commonly used in existing technologies to measure the scattering parameters of devices. However, traditional measurement methods suffer from significant errors when applied to the scattering parameters of wire-bonded components. The main reasons are as follows:

[0003] 1. Since the standard calibration of vector network analyzers often relies on calibration chips, it cannot eliminate the impact of bond wires introduced by wire-bonded devices. For example, the inductance of gold bond wires is usually 300 to 400 pH, which will introduce phase error and may cause significant group delay deviation in the millimeter wave band.

[0004] 2. When measuring scattering parameters, it is usually necessary to set a fixture between the vector network analyzer and the device under test, and use a de-embedding algorithm to de-embed the influence of the fixture on the parameters. However, traditional linear de-embedding algorithms have difficulty accurately separating the nonlinear coupling effects of the fixture and wire bonding, especially when the wires and the device under test form an asymmetric structure, which complicates the electromagnetic field distribution and leads to model mismatch. Summary of the Invention

[0005] The purpose of this application is to provide a method, device, storage medium and electronic device for measuring the scattering parameters of a wire-bonded device, so as to solve the technical problem that the scattering parameter measurement method in the prior art has large errors when applied to the scattering parameter measurement of a wire-bonded device.

[0006] To achieve the above objectives, the present application provides, in a first aspect, a method for measuring scattering parameters of a wire-bonded device, comprising:

[0007] Acquire a first scattering parameter, where the first scattering parameter is a scattering parameter of a first lead having two ends bonded to a first pad and a second pad, respectively;

[0008] Obtaining a second scattering parameter, where the second scattering parameter is a total scattering parameter of a pair of target devices and a second lead connecting the pair of target devices, the pair of target devices being disposed on the first pad and the second pad, and the pair of target devices being axially symmetrically spaced apart, and the second lead being the same length as the first lead;

[0009] A third scattering parameter is calculated based on the first scattering parameter, the second scattering parameter and a de-embedding algorithm, where the third scattering parameter is a scattering parameter of the pair of target devices directly connected in series;

[0010] Based on the third scattering parameter, a scattering parameter of the target device is calculated.

[0011] In one or more embodiments, the step of calculating the third scattering parameter based on the first scattering parameter, the second scattering parameter, and the de-embedding algorithm is specifically as follows:

[0012] The automatic fixture removal module of the vector network analyzer is called to reversely solve the first scattering parameter and the second scattering parameter to obtain the third scattering parameter.

[0013] In one or more embodiments, the step of calculating the scattering parameter of the target device based on the third scattering parameter includes:

[0014] Converting the third scattering parameter into an impedance parameter based on a reference impedance to obtain a first impedance parameter;

[0015] Based on the first impedance parameter, a second impedance parameter is calculated, where the second impedance parameter is the impedance parameter of the target device;

[0016] The second impedance parameter is converted into a scattering parameter based on a reference impedance to obtain the scattering parameter of the target device.

[0017] In one or more embodiments, the step of calculating the second impedance parameter based on the first impedance parameter is specifically:

[0018] A half value of the first impedance parameter is calculated to obtain the second impedance parameter.

[0019] In one or more embodiments, the pair of target devices are centrally symmetrically arranged.

[0020] In one or more embodiments, the first lead and the second lead have the same shape and material.

[0021] In one or more embodiments, the target device is a capacitor.

[0022] In one or more embodiments, the first lead and the second lead are gold bonding wires.

[0023] In order to achieve the above-mentioned object, the second aspect of the present application provides a scattering parameter measurement device for a wire bonding device, comprising:

[0024] A first acquisition module is configured to acquire a first scattering parameter, where the first scattering parameter is a scattering parameter of a first lead having two ends bonded to the first pad and the second pad respectively;

[0025] a second acquisition module, configured to acquire a second scattering parameter, where the second scattering parameter is a total scattering parameter of a pair of target devices and a second lead connecting the pair of target devices, the pair of target devices being disposed on the first pad and the second pad, the pair of target devices being axially symmetrically spaced, and the second lead being the same length as the first lead;

[0026] a de-embedding module, configured to calculate a third scattering parameter based on the first scattering parameter, the second scattering parameter, and a de-embedding algorithm, wherein the third scattering parameter is a scattering parameter of the pair of target devices directly connected in series;

[0027] An output module is configured to calculate the scattering parameter of the target device based on the third scattering parameter.

[0028] In order to achieve the above-mentioned object, the third aspect of the present application provides an electronic device, including:

[0029] at least one processor; and

[0030] A memory storing instructions, wherein when the instructions are executed by the at least one processor, the at least one processor executes the scattering parameter measurement method as described in any one of the above embodiments.

[0031] To achieve the above objectives, a fourth aspect of the present application provides a machine-readable storage medium storing executable instructions, which, when executed, enable the machine to perform the scattering parameter measurement method as described in any of the above embodiments.

[0032] Different from the prior art, the present invention has the following advantages:

[0033] By constructing a symmetrical measurement model and a single-lead model, the present application can measure the scattering parameters of the symmetrical model and the scattering parameters of the single lead. Through the de-embedding algorithm, the scattering parameters of a pair of target devices directly connected in series under an ideal state can be obtained, and then the scattering parameters of the target device can be calculated, thereby eliminating the influence of the bonding wire introduced by the wire-bonded device in the measurement results, significantly improving the measurement accuracy; in addition, the scattering parameter measurement method of the present application is simpler and faster than the traditional measurement method, thereby improving the measurement efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments recorded in this application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0035] Figure 1 This is a flow chart of an embodiment of a method for measuring scattering parameters of a wire-bonded device according to the present application;

[0036] Figure 2 It is a structural diagram of the first lead of the present application;

[0037] Figure 3 is a schematic structural diagram of the target device of the present application and the second lead;

[0038] Figure 4 yes Figure 1 A schematic flow chart of an implementation method corresponding to S400;

[0039] Figure 5 is a diagram of the scattering parameter measurement results of Example 1 of the present application;

[0040] Figure 6 This is a graph showing the scattering parameter measurement results of Comparative Example 1 of the present application;

[0041] Figure 7 This is a structural diagram of an embodiment of a scattering parameter measurement device for a wire-bonded device of the present application;

[0042] Figure 8 It is a structural diagram of an embodiment of the electronic device of the present application. DETAILED DESCRIPTION

[0043] In order to enable those skilled in the art to better understand the technical solutions in this application, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of this application.

[0044] The vector network analyzer (VNA) is the primary tool for measuring scattering parameters (S-parameters). The VNA transmits a known signal and synchronously detects the amplitude and phase of the reflected and transmitted waves. Combined with a reference channel, it performs ratiometric measurements, eliminating the effects of absolute power fluctuations.

[0045] When performing measurements with a VNA, it is usually necessary to set a fixture between the VNA and the device under test (DUT). To eliminate the impact of the fixture on the DUT's parameters, the VNA is equipped with an automatic fixture removal (AFR) module. The AFR module can separate the coupling effect between the fixture and the DUT and reversely eliminate the fixture's contribution from the measurement results, restoring the DUT's true response.

[0046] However, the AFR module of the VNA can only be used for the de-embedding process of the symmetrical fixture effect and cannot eliminate the influence of the bond wire on the measurement results.

[0047] In order to solve the problem that the S parameter measurement results of wire-bonded devices are currently affected by the leads, resulting in large errors, the applicant has developed a new method for measuring the scattering parameters of wire-bonded devices. This method uses a symmetrical test model to eliminate the influence of the leads in the test results of the device under test, thereby significantly improving the S parameter measurement accuracy of the device under test.

[0048] Specifically, see Figure 1 , Figure 1 It is a flow chart of an embodiment of a method for measuring scattering parameters of a wire-bonded device according to the present application.

[0049] like Figure 1 As shown, the measurement method includes:

[0050] S100: Obtain a first scattering parameter.

[0051] The first scattering parameter is a scattering parameter of a first lead having two ends bonded to the first pad and the second pad respectively.

[0052] To ensure the symmetry of the overall structure, the first pad and the second pad may be arranged axially symmetrically with each other.

[0053] Specifically, see Figure 2 , Figure 2 This is a schematic diagram of the structure of the first lead of this application. Figure 2 As shown, both ends of the first lead 300 are directly bonded to the first pad 100 and the second pad 200 . At this time, the scattering parameter of the first lead 300 , ie, the first scattering parameter, can be obtained by VNA measurement.

[0054] During measurement, the VNA may first perform SOLT calibration, that is, perform short circuit, open circuit, load, and through calibration procedures in sequence through standard components, and then connect the two ends of the VNA to the two ends of the first lead 300 to measure the first scattering parameter.

[0055] S200: Obtain a second scattering parameter.

[0056] The second scattering parameter is a total scattering parameter of a pair of target devices and a second lead connecting the pair of target devices; the pair of target devices are respectively arranged on the first pad and the second pad.

[0057] The second lead has the same length as the first lead, so the scattering parameters of the second lead can be used to simulate the scattering parameters of the first lead, which helps to subsequently de-embed the influence of the second lead from the second scattering parameters.

[0058] In one embodiment, in order to further reduce the difference in scattering parameters between the first lead and the second lead and improve the accuracy of subsequent calculations, the shapes and materials of the first lead and the second lead can be consistent, thereby making the first lead and the second lead have completely identical lead structures.

[0059] Specifically, see Figure 3 , Figure 3 This is a schematic diagram of the structure of the target device and the second lead of this application. Figure 3 As shown, a pair of target devices 400 are respectively arranged on the first pad 100 and the second pad 200 . Specifically, the target devices can be mounted on the pads by solder paste or conductive silver paste.

[0060] To ensure the symmetry of the overall structure, a pair of target devices 400 are arranged axially symmetrically and spaced apart, similar to the symmetrical structure of the first pad 100 and the second pad 200 .

[0061] More preferably, in order to further improve the symmetry of the overall structure, a pair of target devices 400 may be arranged centrally and symmetrically.

[0062] In one embodiment, the target device 400 may be a capacitor, such as a silicon-based capacitor, and the first lead 300 and the second lead 500 may be bonding gold wires; in other embodiments, the target device 400 may also be other components, such as a chip, a radio frequency module, etc., and the first lead 300 and the second lead 500 may also be other components that can achieve electrical connection, all of which can achieve the effect of this embodiment.

[0063] Similar to the measurement of the first scattering parameter, after the VNA is calibrated by SOLT, both ends of the VNA can be connected to a pair of target devices 400 respectively to measure the total scattering parameter of the pair of target devices 400 and the second lead 500, i.e., the second scattering parameter.

[0064] S300 : De-embedding the first scattering parameter from the second scattering parameter based on a de-embedding algorithm to obtain a third scattering parameter.

[0065] The first scattering parameter includes the scattering parameter of the first lead. The first lead and the second lead have the same shape, material and size. Therefore, the first scattering parameter can be used as the scattering parameter of the second lead. Then, the first scattering parameter is de-embedded in the second scattering parameter to obtain the scattering parameter of a pair of target devices directly connected in series without any transition in the middle under ideal conditions, that is, the third scattering parameter.

[0066] In one embodiment, since a pair of target devices are symmetrically arranged, the influence of the second lead can be de-embedded by calling an AFR module of a vector network analyzer.

[0067] In this field, the AFR module is used to separate the effect of the symmetrical fixture and the effect of the device under test, and then extract the scattering parameters of the device under test from the test results; since a pair of target devices are symmetrically arranged in this embodiment, the AFR module can be used to separate the effect of the symmetrical target device and the effect of the second lead, and then extract the scattering parameters of the pair of target devices directly connected in series from the test results.

[0068] Specifically, the third scattering parameter of a pair of target devices directly connected in series and the first scattering parameter of the second lead can be used to obtain the total scattering parameter, i.e., the second scattering parameter, through a cascade formula. The AFR module can remove the first scattering parameter from the second scattering parameter to obtain the third scattering parameter. The specific de-embedding algorithm of the AFR module is well known to those skilled in the art and will not be repeated here.

[0069] S400 : Calculate and obtain a scattering parameter of a target device based on a third scattering parameter.

[0070] After obtaining the third scattering parameter of a pair of target devices directly connected in series, the scattering parameter of a single target device can be calculated. The influence of the lead wires has been removed from the scattering parameter, which significantly improves the accuracy.

[0071] Specifically, see Figure 4 , Figure 4 yes Figure 1 A flow chart of an implementation method corresponding to S400.

[0072] like Figure 4 As shown, the method for calculating the scattering parameters of the target device includes:

[0073] S401: Convert the third scattering parameter into an impedance parameter based on the reference impedance to obtain a first impedance parameter. Specifically, the conversion formula of the first impedance parameter can be as follows:

[0074] Z _total =s2z(S,Z0);

[0075] Where s2z is the conversion function from scattering parameter to impedance parameter, Z0 is the reference impedance, S is the third scattering parameter, and Z _total is the first impedance parameter.

[0076] For example, in one embodiment, the s2z function may be specifically:

[0077]

[0078] Where S 11 is the reflection coefficient of port 1, S 12 is the reverse transmission coefficient, S 21 is the forward transmission coefficient, S 22is the reflection coefficient of port 2;

[0079] Z 11 is the input impedance of port 1, Z 12 is the reverse transfer impedance, Z 21 is the forward transfer impedance, Z 22 is the output impedance of port 2.

[0080] The reference impedance Z0 is the reference impedance value for port matching during S-parameter measurement, which is usually consistent with the system characteristic impedance. In one embodiment, the reference impedance may be 50Ω. In other embodiments, the reference impedance may be 75Ω or other values.

[0081] S402: Calculate and obtain a second impedance parameter based on the first impedance parameter.

[0082] The second impedance parameter is an impedance parameter of the target device.

[0083] It can be understood that the first impedance parameter includes the sum of the impedance parameters of two target devices directly connected in series. Therefore, the impedance parameter of a single target device is half of the first impedance parameter.

[0084] Specifically, the calculation formula of the second impedance parameter can be as follows:

[0085] Z _single =Z _total / 2;

[0086] Where Z _total is the first impedance parameter, Z _single is the second impedance parameter.

[0087] S403 : Convert the second impedance parameter into a scattering parameter based on the reference impedance to obtain the scattering parameter of the target device.

[0088] After obtaining the impedance parameters of a single target device, they can be converted into scattering parameters to obtain the scattering parameters of the target device.

[0089] In one embodiment, the conversion formula of the scattering parameter of the target device may be as follows:

[0090] S _single =z2s(Z _single ,Z0);

[0091] Where z2s is the conversion function from impedance parameter to scattering parameter, Z0 is the reference impedance, and Z _single is the second impedance parameter, S _single is the scattering parameter of the target device.

[0092] For example, in one embodiment, the z2s function may be specifically:

[0093]

[0094] Where ΔZ is the difference between the impedance parameter and the reference impedance Z0.

[0095] Based on the measurement methods of the above-mentioned embodiments, by constructing a symmetrical measurement model and a single-lead model, the scattering parameters of the symmetrical model and the scattering parameters of the single lead are measured. The de-embedding algorithm can obtain the scattering parameters of a pair of target devices directly connected in series under ideal conditions, and then the scattering parameters of the target device are calculated. The scattering parameters have eliminated the influence of the bonding wires introduced by the wire-bonding device, significantly improving the accuracy.

[0096] The beneficial effects of the technical solution of the present application will be further described in detail below with reference to specific embodiments.

[0097] Example 1:

[0098] A first gold wire is bonded between two centrally symmetrical pads on the PCB, and a vector network analyzer is calibrated using SOLT. The scattering parameter of the gold wire, i.e., the first scattering parameter, is then measured.

[0099] Remove the gold wire and solder the same capacitor to be tested onto the two pads. Use a second gold wire to bond the two capacitors to be tested. The second gold wire has the same shape and size as the first gold wire. Perform a SOLT calibration on the vector network analyzer and measure the scattering parameter between the two capacitors to be tested, which is the second scattering parameter.

[0100] based on Figure 1 The method shown in the figure calculates the scattering parameter S of a single capacitor to be measured based on the first scattering parameter and the second scattering parameter. 21 ,get Figure 5 , Figure 5 This is a diagram of the scattering parameter measurement results of Example 1 of the present application.

[0101] Comparative Example 1:

[0102] The same capacitor to be tested as in Example 1 is mounted on a pad on the PCB. The capacitor to be tested and another pad are directly bonded with gold wire. The vector network analyzer is calibrated with SOLT. The scattering parameter S of the capacitor to be tested is then measured. 21 ,get Figure 6 , Figure 6 This is a diagram of the scattering parameter measurement results of comparative example 1 of the present application.

[0103] Effect example:

[0104] Comparison Figure 5 and Figure 6According to the data, the scattering parameter results of Example 1 are: S21=-0.17dB@20GHz, S21=-0.27dB@40GHz, S21=-0.368dB@67GHz; the scattering parameter results of Comparative Example 1 are S21=-0.448dB@20GHz, S21=-1.426dB@40GHz, S21=-3.078dB@67GHz.

[0105] From the above data, it can be seen that the S21 measured in Example 1 is closer to 0 dB than that in Comparative Example 1, and the measurement result of Example 1 is more consistent with the actual situation. Therefore, the measurement accuracy of Example 1 is significantly better than the traditional solution of Comparative Example 1.

[0106] This application also provides a scattering parameter measurement device for a wire bonding device, see Figure 7 , Figure 7 It is a structural diagram of an embodiment of a scattering parameter measurement device for a wire-bonding device of the present application.

[0107] like Figure 7 As shown, the device includes a first acquisition module 21 , a second acquisition module 22 , a de-embedding module 23 and an output module 24 .

[0108] The first acquisition module 21 is used to acquire a first scattering parameter, where the first scattering parameter is a scattering parameter of a first lead having two ends bonded to a first pad and a second pad respectively;

[0109] The second acquisition module 22 is used to acquire a second scattering parameter, where the second scattering parameter is a total scattering parameter of a pair of target devices and a second lead connecting the pair of target devices, wherein the pair of target devices are respectively disposed on a first pad and a second pad, and the pair of target devices are axially symmetrically spaced apart, and the second lead is the same length as the first lead;

[0110] The de-embedding module 23 is configured to calculate a third scattering parameter based on the first scattering parameter, the second scattering parameter, and a de-embedding algorithm, where the third scattering parameter is a scattering parameter of a pair of target devices directly connected in series.

[0111] The output module 24 is configured to calculate and obtain the scattering parameter of the target device based on the third scattering parameter.

[0112] As above Figures 1 to 6 The scattering parameter measurement method according to an embodiment of this specification is described. The details mentioned in the above description of the method embodiment also apply to the scattering parameter measurement device according to an embodiment of this specification. The above scattering parameter measurement device can be implemented using hardware, software, or a combination of hardware and software.

[0113] This application also provides an electronic device, see Figure 8 , Figure 8 This is a schematic diagram of the structure of an embodiment of the electronic device of the present application. Figure 8 As shown, the electronic device 30 may include at least one processor 31, a memory 32 (e.g., a non-volatile memory), a storage 33, and a communication interface 34, and the at least one processor 31, the storage 32, the storage 33, and the communication interface 34 are connected together via a bus 35. The at least one processor 31 executes at least one computer-readable instruction stored or encoded in the storage 32.

[0114] It should be understood that the computer executable instructions stored in the memory 32, when executed, cause at least one processor 31 to perform the above combined operations in various embodiments of this specification. Figure 1-Figure 5 Describes the various operations and functions.

[0115] In the embodiments of the present specification, the electronic device 30 may include but is not limited to: a personal computer, a server computer, a workstation, a desktop computer, a laptop computer, a notebook computer, a mobile electronic device, a smart phone, a tablet computer, a cellular phone, a personal digital assistant (PDA), a handheld device, a messaging device, a wearable electronic device, a consumer electronic device, and the like.

[0116] According to one embodiment, a program product such as a machine-readable medium is provided. The machine-readable medium may have instructions (i.e., the above-mentioned elements implemented in software form), which, when executed by a machine, causes the machine to perform the above-mentioned combined embodiments of the present specification. Figure 1-Figure 7 Specifically, a system or device equipped with a readable storage medium can be provided, on which software program codes for implementing the functions of any of the above-mentioned embodiments are stored, and a computer or processor of the system or device can be enabled to read and execute the instructions stored in the readable storage medium.

[0117] In this case, the program code itself read from the machine-readable medium can implement the functions of any one of the above embodiments, and thus the machine-readable code and the machine-readable storage medium storing the machine-readable code constitute part of this specification.

[0118] Examples of readable storage media include floppy disks, hard disks, magneto-optical disks, optical disks (e.g., CD-ROMs, CD-Rs, CD-RWs, DVD-ROMs, DVD-RAMs, DVD-RWs, DVD-RWs), magnetic tapes, non-volatile memory cards, and ROMs. Alternatively, the program code may be downloaded from a server computer or a cloud via a communication network.

[0119] Those skilled in the art will appreciate that the various embodiments disclosed above may be modified and altered in various ways without departing from the essence of the invention. Therefore, the scope of protection of this specification shall be defined by the appended claims.

[0120] It should be noted that not all steps and units in the above processes and system structure diagrams are required, and certain steps or units can be omitted according to actual needs. The execution order of each step is not fixed and can be determined as needed. The device structure described in the above embodiments can be a physical structure or a logical structure, that is, some units may be implemented by the same physical client, or some units may be implemented by multiple physical clients, or may be implemented by certain components in multiple independent devices.

[0121] In the above embodiments, hardware unit or module can be realized by mechanical means or electrical means. For example, a hardware unit, module or processor can include permanent dedicated circuit or logic (such as special processor, FPGA or ASIC) to complete the corresponding operation. Hardware unit or processor can also include programmable logic or circuit (such as general purpose processor or other programmable processor), can be temporarily set up to complete the corresponding operation by software. Concrete implementation (mechanical means or dedicated permanent circuit or temporary circuit) can be determined based on cost and time consideration.

[0122] The specific embodiments described above in conjunction with the accompanying drawings describe exemplary embodiments, but do not represent all embodiments that can be implemented or fall within the scope of protection of the claims. The term "exemplary" used throughout this specification means "used as an example, instance or illustration" and does not mean "preferred" or "having advantages" over other embodiments. For the purpose of providing an understanding of the described technology, the specific embodiments include specific details. However, these technologies can be implemented without these specific details. In some instances, in order to avoid obscuring the concepts of the described embodiments, well-known structures and devices are shown in block diagram form.

[0123] The foregoing description of the present disclosure is provided to enable any person skilled in the art to implement or use the present disclosure. Various modifications to the present disclosure will be readily apparent to those skilled in the art, and the general principles herein may be applied to other variations without departing from the scope of the present disclosure. Therefore, the present disclosure is not limited to the examples and designs described herein, but is intended to be consistent with the widest range of principles and novel features disclosed herein.

Claims

1. A method for measuring scattering parameters of a wire bonding device, characterized in that: include: Acquire a first scattering parameter, where the first scattering parameter is a scattering parameter of a first lead having two ends bonded to a first pad and a second pad, respectively; Obtaining a second scattering parameter, where the second scattering parameter is a total scattering parameter of a pair of target devices and a second lead connecting the pair of target devices, the pair of target devices being disposed on the first pad and the second pad, and the pair of target devices being axially symmetrically spaced apart, and the second lead being the same length as the first lead; A third scattering parameter is calculated based on the first scattering parameter, the second scattering parameter and a de-embedding algorithm, where the third scattering parameter is a scattering parameter of the pair of target devices directly connected in series; Based on the third scattering parameter, a scattering parameter of the target device is calculated.

2. The scattering parameter measurement method according to claim 1, characterized in that: The steps of calculating the third scattering parameter based on the first scattering parameter, the second scattering parameter and the de-embedding algorithm are as follows: The automatic fixture removal module of the vector network analyzer is called to reversely solve the first scattering parameter and the second scattering parameter to obtain the third scattering parameter.

3. The scattering parameter measurement method according to claim 1, characterized in that: The step of calculating the scattering parameter of the target device based on the third scattering parameter includes: Converting the third scattering parameter into an impedance parameter based on a reference impedance to obtain a first impedance parameter; Based on the first impedance parameter, a second impedance parameter is calculated, where the second impedance parameter is the impedance parameter of the target device; The second impedance parameter is converted into a scattering parameter based on a reference impedance to obtain the scattering parameter of the target device.

4. The scattering parameter measurement method according to claim 3, characterized in that: The step of calculating the second impedance parameter based on the first impedance parameter is specifically as follows: A half value of the first impedance parameter is calculated to obtain the second impedance parameter.

5. The scattering parameter measurement method according to claim 1, characterized in that: The pair of target devices are centrally symmetrically arranged.

6. The scattering parameter measurement method according to claim 1, characterized in that: The first lead and the second lead are consistent in shape and material.

7. The scattering parameter measurement method according to claim 1, characterized in that: The target device is a capacitor; and / or, The first lead and the second lead are gold bonding wires.

8. A scattering parameter measurement device for a wire bonding device, characterized in that: include: A first acquisition module is configured to acquire a first scattering parameter, where the first scattering parameter is a scattering parameter of a first lead having two ends bonded to the first pad and the second pad respectively; a second acquisition module, configured to acquire a second scattering parameter, where the second scattering parameter is a total scattering parameter of a pair of target devices and a second lead connecting the pair of target devices, the pair of target devices being disposed on the first pad and the second pad, the pair of target devices being axially symmetrically spaced, and the second lead being the same length as the first lead; a de-embedding module, configured to calculate a third scattering parameter based on the first scattering parameter, the second scattering parameter, and a de-embedding algorithm, wherein the third scattering parameter is a scattering parameter of the pair of target devices directly connected in series; An output module is configured to calculate the scattering parameter of the target device based on the third scattering parameter.

9. An electronic device comprising: at least one processor; as well as A memory storing instructions, wherein when the instructions are executed by the at least one processor, the at least one processor executes the scattering parameter measurement method according to any one of claims 1 to 7. 10 . A machine-readable storage medium storing executable instructions, wherein when the instructions are executed, the machine is caused to perform the scattering parameter measurement method according to claim 1 .

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