Miniature light emitting diode driving circuit and testing method thereof
By forming a test path in the μLED manufacturing process, using the first and second test transistors to detect defects before and after manufacturing, the shortcomings of existing testing methods are solved, and the comprehensiveness of defect detection and repair efficiency are improved.
Patent Information
- Application Number
- CN202510602894.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-12-27
- Filing Date
- 2025-05-12
- Publication Date
- 2025-08-08
AI Technical Summary
The existing μLED testing methods may not be ideal enough and it is difficult to effectively detect defects in the manufacturing process.
By forming a test path when manufacturing different metal layers, the first and second test transistors and the driving circuits are used to detect defects before and after manufacturing, respectively.
Effective defect detection of μLED driving circuits at different manufacturing stages is realized, improving the efficiency of defect repair and comprehensiveness of testing.
Smart Images
Figure CN120446720A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to a micro light emitting diode driving circuit and a testing method thereof. Background Art
[0002] μLED (micro-light emitting diode, Micro-LED) has been receiving more and more attention and its applications are becoming more and more extensive. μLED is an emerging display technology with a variety of application scenarios, including but not limited to the following. μLED is used in consumer electronics applications: (1) smart watches and wearable devices: high brightness and low power consumption are suitable for small screen applications; and, (2) smartphones: achieve high resolution and excellent color performance. μLED is used in large display applications: (1) outdoor and indoor display walls: high brightness and long life are suitable for various public display applications; and, (2) commercial uses: provide high-quality visual effects in retail, billboards and other fields. μLED is used in automotive and aviation applications: (1) in-car displays: provide better visibility and durability; and, (2) aircraft seat entertainment systems: durable, energy-saving, and clear vision. μLED is used in AR / VR device applications: μLED's high brightness and small size make it suitable for near-eye displays (such as AR glasses, VR headsets, etc.). μLED is used in medical equipment applications: When μLED is used in small, high-resolution displays, it can be used in endoscopes, microscopes and other medical instruments. μLEDs are used in lighting and special applications: μLEDs can be used for precision light sources, optical communications, or applications in special wavelengths, such as ultraviolet or infrared lighting.
[0003] The advantages of μLEDs lie in their high brightness and contrast, making them suitable for outdoor use or in bright environments. Furthermore, each pixel can illuminate independently, providing excellent contrast. μLEDs also offer low power consumption, making them more energy-efficient than OLEDs and traditional LCDs, especially when displaying high-brightness images due to their high luminous efficiency. μLEDs also offer long life and durability, as they are less susceptible to burn-in (compared to OLEDs (organic light-emitting diodes)), have a longer lifespan, and are adaptable to extreme environments. Furthermore, μLEDs have extremely fast response times, making them suitable for applications with high refresh rates, such as AR / VR devices. μLEDs offer excellent color rendering, thanks to the design of their RGB chips, enabling an excellent color gamut and precise color rendering. μLEDs can achieve extremely small pixel pitches, enabling ultra-high resolution and miniaturization, making them particularly suitable for microdisplays and near-eye applications. μLED displays can be modularized and assembled into large screens to create a seamless display.
[0004] Current testing methods may still not be ideal for detecting defects in μLEDs.
[0005] Therefore, the present disclosure provides a μLED driving circuit and a testing method thereof, in order to improve the existing testing shortcomings. Summary of the Invention
[0006] According to a first aspect of the present invention, a method for testing a micro-light-emitting diode (μLED) driver circuit is provided, comprising: in response to completing the manufacture of a first predetermined metal layer, forming a first test path, the first test path passing through a first test transistor of a test circuit and a driver circuit to test at least one first defect that occurs before the manufacture of the first predetermined metal layer; and in response to completing the manufacture of a second predetermined metal layer, forming a second test path passing through a second test transistor of the test circuit and the driver circuit to detect at least one second defect that occurs after the manufacture of the first predetermined metal layer.
[0007] According to a second aspect of the present invention, a micro-light-emitting diode (μLED) driver circuit is provided, comprising: a grayscale control circuit; a driver circuit coupled to the grayscale control circuit; and a test circuit coupled to the driver circuit, the test circuit comprising a first test transistor and a second test transistor. In response to the completion of fabrication of a first predetermined metal layer, a first test path is formed, the first test path passing through the first test transistor of the test circuit and the driver circuit to test for at least one first defect occurring before fabrication of the first predetermined metal layer; and in response to the completion of fabrication of a second predetermined metal layer, a second test path is formed, the second test path passing through the second test transistor of the test circuit and the driver circuit to detect at least one second defect occurring after fabrication of the first predetermined metal layer.
[0008] In order to better understand the above and other aspects of the present invention, the following embodiments are specifically described in detail with reference to the accompanying drawings: BRIEF DESCRIPTION OF THE DRAWINGS
[0009] Figure 1 FIG. 1 shows a circuit diagram of a μLED driving circuit according to an embodiment of the present disclosure.
[0010] Figure 2 FIG. 1 shows a circuit diagram of a μLED driving circuit according to an embodiment of the present disclosure.
[0011] Figure 3 FIG. 1 shows a circuit diagram of a μLED driving circuit according to an embodiment of the present disclosure.
[0012] Figure 4 FIG. 1 shows a circuit diagram of a μLED driving circuit according to an embodiment of the present disclosure.
[0013] Figure 5 FIG. 1 shows a circuit diagram of a μLED driving circuit according to an embodiment of the present disclosure.
[0014] Figure 6 FIG. 1 shows a circuit diagram of a μLED driving circuit according to an embodiment of the present disclosure.
[0015] Figure 7A FIG. 1 shows a circuit diagram of a μLED driving circuit according to an embodiment of the present disclosure.
[0016] Figure 7B Showing an embodiment of the present disclosure Figure 7A Partial cross-sectional view of the μLED driver circuit.
[0017] Description of reference numerals:
[0018] 100, 200, 300, 400, 500, 600, 700: μLED driver circuit
[0019] 110: Grayscale control circuit
[0020] 120: Driving circuit
[0021] 130: Test circuit
[0022] 140: Lighting control circuit
[0023] 150: Binding area
[0024] 150_1 and 150_2: Pad
[0025] Data: data signal
[0026] SN, SN-1: gate drive signal
[0027] T_AT_M2, T_AT_Final: test transistor
[0028] AT_M2, AT_Final: test signals
[0029] EM: Lighting control signal
[0030] T_AM_1~T_AM_4: light-emitting transistors
[0031] P1, P2: test paths
[0032] V: Through hole
[0033] 110_1 to 110_3: Grayscale control subcircuit
[0034] C1: capacitor
[0035] 140_1 to 140_3: Light-emitting control subcircuit
[0036] T1-T5: transistors DETAILED DESCRIPTION
[0037] The technical terms used in this specification are based on customary terms in the technical field. If some terms are explained or defined in this specification, the interpretation of these terms shall be based on the explanations or definitions in this specification. Each embodiment of the present disclosure has one or more technical features. Under the premise of possible implementation, those skilled in the art may selectively implement some or all of the technical features in any embodiment, or selectively combine some or all of the technical features in these embodiments.
[0038] Figure 1 A circuit diagram of a μLED driver circuit according to one embodiment of the present disclosure is shown. μLED driver circuit 100 includes a grayscale control circuit 110, a driver circuit 120, a test circuit 130, a light control circuit 140, and a bonding area 150. Bonding area 150 is used for bonding to a μLED. Furthermore, bonding area 150 includes pads 150_1 and 150_2.
[0039] The gray scale control circuit 110 is used to control the gray scale according to the data signal Data and the gate driving signals SN, SN-1 . . .
[0040] The driving circuit 120 is coupled to the grayscale control circuit 110 for driving the μLEDs.
[0041] The test circuit 130 is used for testing. The test circuit 130 includes a first test transistor T_AT_M2 and a second test transistor T_AT_Final. The first test transistor T_AT_M2 is coupled to the driver circuit 120 and the light-emitting control circuit 140. The second test transistor T_AT_Final is coupled to the driver circuit 120 and the light-emitting control circuit 140. The first test transistor T_AT_M2 and the second test transistor T_AT_Final are controlled by a first test signal AT_M2 and a second test signal AT_Final, respectively. When the first test transistor T_AT_M2 is turned on, the first test signal AT_M2 is a DC signal. When the second test transistor T_AT_Final is turned on, the second test signal AT_Final is a DC signal.
[0042] The light control circuit 140 is used to control whether the μLED emits light according to the light control signal EM. The light control circuit 140 includes a first light emitting transistor T_AM_1 . The first light emitting transistor T_AM_1 is coupled to a first test transistor T_AT_M2 and a second test transistor T_AT_Final of the test circuit 130 .
[0043] The bonding region 150 is used for bonding to a μLED (not shown) and includes pads 150_1 and 150_2 .
[0044] During testing, the details of test circuit 130 are as follows. Upon completion of fabrication of a first predetermined metal layer (e.g., but not limited to, the third metal layer (M2)), a first test path P1 is formed. This first test path P1 passes through the first light-emitting transistor T_AM_1 of light-emitting control circuit 140, the first test transistor T_AT_M2 of test circuit 130 (the first test signal AT_M2 is logic high, turning on the first test transistor T_AT_M2 while the second test transistor T_AT_Final is off), and driver circuit 120. This allows for testing for open circuit defects that exist before fabrication of the first predetermined metal layer, facilitating repair. Figure 1 In the embodiment, the through hole V is used to penetrate the first predetermined metal layer to the pad 150_2 of the bonding area 150 .
[0045] Furthermore, upon completion of fabrication of a second predetermined metal layer (for example, but not limited to, the last metal layer or the penultimate metal layer), a second test path P2 is formed. This second test path P2 passes through the first light-emitting transistor T_AM_1 of the light-emitting control circuit 140, the second test transistor T_AT_Final of the test circuit 130 (the second test signal AT_Final is logic high to turn on the second test transistor T_AT_Final, while the first test transistor T_AT_M2 is turned off), and the driver circuit 120. This allows detection of open defects (for example, but not limited to, non-open vias V) that occur only after fabrication of the first predetermined metal layer.
[0046] It can also be said that in Figure 1 , the detection path P2 is moved to the pad 150_2 (also referred to as the μLED pad) of the bonding area 150 .
[0047] Figure 2 FIG. 1 shows a circuit diagram of a μLED driving circuit according to an embodiment of the present disclosure. Figure 1 , Figure 2 In the μLED driving circuit 200 , the light control circuit 240 includes a first light emitting transistor T_AM_1 and a second light emitting transistor T_AM_2 . The first light emitting transistor T_AM_1 is coupled to the first test transistor T_AT_M2 of the test circuit 130 , and the second light emitting transistor T_AM_2 is coupled to the second test transistor T_AT_Final of the test circuit 130 .
[0048] At Figure 2During testing, the details of test circuit 130 are as follows. Upon completion of fabrication of a first predetermined metal layer (for example, but not limited to, the third metal layer (M2)), a first test path P1 is formed. This first test path P1 passes through the first light-emitting transistor T_AM_1 of light-emitting control circuit 140, the first test transistor T_AT_M2 of test circuit 130 (the first test signal AT_M2 is logic high, turning on the first test transistor T_AT_M2 while the second test transistor T_AT_Final is off), and driver circuit 120. This allows for testing for open circuit defects that exist before fabrication of the first predetermined metal layer, facilitating repair.
[0049] At Figure 2 Furthermore, upon completion of fabrication of a second predetermined metal layer (for example, but not limited to, the last metal layer or the penultimate metal layer), a second test path P2 is formed. This second test path P2 passes through the second light-emitting transistor T_AM_2 of the light-emitting control circuit 140, the second test transistor T_AT_Final of the test circuit 130 (the second test signal AT_Final is logic high to turn on the second test transistor T_AT_Final while the first test transistor T_AT_M2 is off), and the driver circuit 120. This allows detection of open defects (for example, but not limited to, non-open vias V) that occur only after fabrication of the first predetermined metal layer.
[0050] It can also be said that in Figure 2 , the detection path P2 is moved to the pad 150_2 (also referred to as the μLED pad) of the bonding area 150 .
[0051] Figure 3 FIG. 1 shows a circuit diagram of a μLED driving circuit according to an embodiment of the present disclosure. Figure 1 , Figure 3 The μLED driving circuit 300 does not include a light emitting control circuit. The first light emitting transistor T_AM_1 and the second light emitting transistor T_AM_2 both receive the data signal Data.
[0052] At Figure 3 During testing, the details of test circuit 130 are as follows. Upon completion of fabrication of a first predetermined metal layer (e.g., but not limited to, the third metal layer (M2)), a first test path P1 is formed. This first test path P1 passes through test circuit 130's first test transistor T_AT_M2 (a first test signal AT_M2 is logic high, turning on first test transistor T_AT_M2 while second test transistor T_AT_Final is off) and driver circuit 120. This allows for testing for open circuit defects that exist before fabrication of the first predetermined metal layer, facilitating repair.
[0053] At Figure 3 Furthermore, upon completion of fabrication of a second predetermined metal layer (for example, but not limited to, the last metal layer or the penultimate metal layer), a second test path P2 is formed. This second test path P2 passes through the second test transistor T_AT_Final of the test circuit 130 (the second test signal AT_Final is logic high to turn on the second test transistor T_AT_Final, while the first test transistor T_AT_M2 is turned off) and the driver circuit 120. This allows detection of open defects (for example, but not limited to, non-open vias V) that occur only after fabrication of the first predetermined metal layer.
[0054] It can also be said that in Figure 3 , the detection path P2 is moved to the pad 150_2 (also referred to as the μLED pad) of the bonding area 150 .
[0055] Figure 4 FIG. 1 shows a circuit diagram of a μLED driving circuit according to an embodiment of the present disclosure. Figure 4 The circuit diagram is similar to Figure 1 But the difference is that Figure 1 In the μLED driving circuit 100, the driving circuit 120 is coupled to the reference voltage source VSS, and the μLED is coupled to the reference voltage source VDD. Figure 4 In the μLED driving circuit 400 , the driving circuit 120 is coupled to the reference voltage source VDD, and the μLED is coupled to the reference voltage source VSS.
[0056] At Figure 4 During testing, the details of test circuit 130 are as follows. Upon completion of fabrication of a first predetermined metal layer (e.g., but not limited to, the third metal layer (M2)), a first test path P1 is formed. This first test path P1 passes through test circuit 130's first test transistor T_AT_M2 (a first test signal AT_M2 is logic high, turning on first test transistor T_AT_M2 while second test transistor T_AT_Final is off) and driver circuit 120. This allows for testing for open circuit defects that exist before fabrication of the first predetermined metal layer, facilitating repair.
[0057] At Figure 4Furthermore, upon completion of fabrication of a second predetermined metal layer (for example, but not limited to, the last metal layer or the penultimate metal layer), a second test path P2 is formed. This second test path P2 passes through the first light-emitting transistor T_AM_1 of the light-emitting control circuit 140, the second test transistor T_AT_Final of the test circuit 130 (the second test signal AT_Final is logic high to turn on the second test transistor T_AT_Final, while the first test transistor T_AT_M2 is turned off), and the driver circuit 120. This allows detection of open circuit defects (for example, but not limited to, non-open vias V) that occur only after fabrication of the first predetermined metal layer.
[0058] It can also be said that in Figure 4 , the detection path P2 is moved to the pad 150_2 (also referred to as the μLED pad) of the bonding area 150 .
[0059] Figure 5 FIG. 1 shows a circuit diagram of a μLED driving circuit according to an embodiment of the present disclosure. Figure 5 The circuit diagram is similar to Figure 2 But the difference is that Figure 2 In the μLED driving circuit 200, the driving circuit 120 is coupled to the reference voltage source VSS, and the μLED is coupled to the reference voltage source VDD. Figure 5 In the μLED driving circuit 500 , the driving circuit 120 is coupled to the reference voltage source VDD, and the μLED is coupled to the reference voltage source VSS.
[0060] At Figure 2 During testing, the details of test circuit 130 are as follows. Upon completion of fabrication of a first predetermined metal layer (for example, but not limited to, the third metal layer (M2)), a first test path P1 is formed. This first test path P1 passes through the first light-emitting transistor T_AM_1 of light-emitting control circuit 140, the first test transistor T_AT_M2 of test circuit 130 (the first test signal AT_M2 is logic high, turning on the first test transistor T_AT_M2 while the second test transistor T_AT_Final is off), and driver circuit 120. This allows for testing for open circuit defects that exist before fabrication of the first predetermined metal layer, facilitating repair.
[0061] At Figure 5Furthermore, upon completion of fabrication of a second predetermined metal layer (for example, but not limited to, the last metal layer or the penultimate metal layer), a second test path P2 is formed. This second test path P2 passes through the second light-emitting transistor T_AM_2 of the light-emitting control circuit 140, the second test transistor T_AT_Final of the test circuit 130 (the second test signal AT_Final is logic high to turn on the second test transistor T_AT_Final while the first test transistor T_AT_M2 is off), and the driver circuit 120. This allows detection of open defects (for example, but not limited to, non-open vias V) that occur only after fabrication of the first predetermined metal layer.
[0062] It can also be said that in Figure 5 , the detection path P2 is moved to the pad 150_2 (also referred to as the μLED pad) of the bonding area 150 .
[0063] Figure 6 FIG. 1 shows a circuit diagram of a μLED driving circuit according to an embodiment of the present disclosure. Figure 6 The circuit diagram is similar to Figure 3 But the difference is that Figure 3 In the μLED driving circuit 300, the driving circuit 120 is coupled to the reference voltage source VSS, and the μLED is coupled to the reference voltage source VDD. Figure 6 In the μLED driving circuit 600 , the driving circuit 120 is coupled to the reference voltage source VDD, and the μLED is coupled to the reference voltage source VSS.
[0064] At Figure 6 During testing, the details of test circuit 130 are as follows. Upon completion of fabrication of a first predetermined metal layer (e.g., but not limited to, the third metal layer (M2)), a first test path P1 is formed. This first test path P1 passes through test circuit 130's first test transistor T_AT_M2 (a first test signal AT_M2 is logic high, turning on first test transistor T_AT_M2 while second test transistor T_AT_Final is off) and driver circuit 120. This allows for testing for open circuit defects that exist before fabrication of the first predetermined metal layer, facilitating repair.
[0065] At Figure 6Furthermore, upon completion of fabrication of a second predetermined metal layer (for example, but not limited to, the last metal layer or the penultimate metal layer), a second test path P2 is formed. This second test path P2 passes through the second test transistor T_AT_Final of the test circuit 130 (the second test signal AT_Final is logic high to turn on the second test transistor T_AT_Final, while the first test transistor T_AT_M2 is turned off) and the driver circuit 120. This allows detection of open defects (for example, but not limited to, non-open vias V) that occur only after fabrication of the first predetermined metal layer.
[0066] It can also be said that in Figure 6 , the detection path P2 is moved to the pad 150_2 (also referred to as the μLED pad) of the bonding area 150 .
[0067] In one embodiment of the present disclosure, the architecture of the grayscale control circuit 110 and the driving circuit 120 is not particularly limited. However, to better understand the embodiment of the present disclosure, the architecture of the grayscale control circuit 110 and the driving circuit 120 will be described below by way of example, but it should be understood that the present disclosure is not limited thereto.
[0068] Figure 7A FIG. 1 shows a circuit diagram of a μLED driving circuit according to an embodiment of the present disclosure. Figure 7B Showing an embodiment of the present disclosure Figure 7A A partial cross-sectional view of a μLED driver circuit. μLED driver circuit 700 includes a grayscale control circuit 110, a driver circuit 120, a test circuit 130, a light control circuit 140, and a bonding area 150. Grayscale control circuit 110 includes multiple grayscale control sub-circuits 110_1 through 110_3 and capacitor C1. Light control circuit 140 includes multiple light control sub-circuits 140_1 through 140_3. Bonding area 150 is used for bonding to a μLED. Furthermore, bonding area 150 includes pads 150_1 and 150_2.
[0069] Grayscale control subcircuit 110_1 includes transistors T1 and T2. The three terminals of transistor T1 are coupled to reference voltage source VSS, scan control signal SN-1, and node Q. The three terminals of transistor T2 are coupled to data signal Data, scan control signal SN, and node Q.
[0070] Grayscale control subcircuit 110_2 includes transistors T3 and T4. Three terminals of transistor T3 are coupled to initial voltage Vini, scan control signal SN-1, and driving circuit 120. Three terminals of transistor T4 are coupled to reset voltage Vrst, scan control signal SN, and transistor T6 of driving circuit 120.
[0071] The grayscale control sub-circuit 110_3 includes a transistor T5 , wherein three terminals of the transistor T5 are coupled to the initial voltage Vini, the scan control signal SN- 1 , and the transistor T6 of the driving circuit 120 .
[0072] Two terminals of the capacitor C1 are coupled to the node Q and the driving circuit 120 .
[0073] The driving circuit 120 includes a transistor T6 , the three terminals of which are coupled to a reference voltage source VSS, transistors T3 and T4 of the grayscale control sub-circuit 110_2 , and transistor T_AM_3 of the light emitting control sub-circuit 130_2 .
[0074] The test circuit 130 includes transistors T_AT_M2 and T_AT_Final. The three terminals of transistor T_AT_M2 are coupled to transistor T_AM_1, the first test signal AT_M2, and transistor T_AM_3. The three terminals of transistor T_AT_Final are coupled to transistor T_AM_2, the second test signal AT_Final, and transistor T_AM_3.
[0075] The light control subcircuit 140_1 includes transistors T_AM_1 and T_AM_2. The three terminals of transistor T_AM_1 are coupled to the data signal Data, the light emission signal EM, and the transistor T_AT_M2 of the test circuit 130. The three terminals of transistor T_AM_2 are coupled to the data signal Data, the light emission signal EM, and the transistor T_AT_Final of the test circuit 130.
[0076] The light emitting control sub-circuit 140_2 includes a transistor T_AM_3 , three terminals of which are coupled to the transistor T6 of the driving circuit 120 , the light emitting signal EM, and the bonding region 150 . The bonding region 150 is used to couple to the μLED.
[0077] The light emitting control sub-circuit 140_3 includes a transistor T_AM_4 , wherein three terminals of the transistor T_AM_4 are coupled to the transistor T4 , the light emitting signal EM, and the node Q.
[0078] Details of the grayscale control circuit 110 , the driving circuit 120 , the light emitting control circuit 140 and the bonding area 150 are omitted here.
[0079] During testing, the details of test circuit 130 are as follows. Upon completion of fabrication of a first predetermined metal layer (e.g., but not limited to, the third metal layer (M2)), a first test path P1 is formed. This first test path P1 passes through transistor T_AM_1 of light control circuit 140, transistor T_AT_M2 of test circuit 130 (a first test signal AT_M2 is logic high, turning on transistor T_AT_M2 while transistor T_AM_Final is off), transistor T_AM_3 of light control circuit 140, and transistor T6 of driver circuit 120. This allows for testing for open circuit defects that exist before fabrication of the first predetermined metal layer, facilitating repair.
[0080] Furthermore, upon completion of fabrication of a second predetermined metal layer (for example, but not limited to, the last metal layer or the penultimate metal layer), a second test path P2 is formed. This second test path P2 passes through transistor T_AM_2 of light control circuit 140, transistor T_AT_Final of test circuit 130 (the second test signal AT_Final is logic high, turning on transistor T_AT_Final while transistor T_AT_M2 is off), transistor T_AM_3 of light control circuit 140, and transistor T6 of driver circuit 120. This allows detection of open defects (for example, but not limited to, non-open vias V) that occur only after fabrication of the first predetermined metal layer.
[0081] It can also be said that in Figure 7A , the detection path P2 is moved to the pad 150_2 (also referred to as the μLED pad) of the bonding area 150 .
[0082] Figure 7B The signal paths of the first test path P1 and the second test path P2 are shown.
[0083] As can be seen from the above, in one embodiment of the present disclosure, upon completion of the manufacture of a first predetermined metal layer (for example, but not limited to, the third metal layer (M2)), a first test path P1 is formed, which passes through the light-emitting control circuit 140 (the light-emitting control circuit 140 is a selective component), the test circuit 130, and the driver circuit 120. This allows for testing of open circuit defects that exist before the manufacture of the first predetermined metal layer, facilitating repair. In addition, upon completion of the manufacture of a second predetermined metal layer (for example, but not limited to, the last metal layer or the second-to-last metal layer), a second test path P2 is formed, which passes through the light-emitting control circuit 140 (the light-emitting control circuit 140 is a selective component), the test circuit 130, and the driver circuit 120. This allows for detection of open circuit defects that occur only after the manufacture of the first predetermined metal layer. This allows for more effective testing of whether the μLED driver circuit has defects.
[0084] Although this disclosure may describe many specific details, these should not be construed as limitations on the scope of the claimed invention, but rather as descriptions of features of particular embodiments. In this disclosure, certain features described in the context of a single embodiment may also be implemented in combination in a single embodiment. Conversely, various features described in the context of a single embodiment may also be implemented in multiple embodiments individually or in any appropriate subcombination. In addition, although a feature may initially be described as working in certain combinations, or even initially described as such a combination, in some cases one or more features may be deleted from the combination, and the described combination may be for a subcombination or variation of a subcombination. Similarly, although operations are depicted in the diagrams as being performed in a particular order, this should not be understood as requiring that the operations must be performed in the particular order or sequence shown, or that all depicted operations must be performed to achieve the desired result.
[0085] Although the above embodiments of the present disclosure only disclose some examples and implementations, based on the disclosed content, the examples and implementations and other implementations may be changed, modified, and enhanced.
[0086] In summary, although the present invention has been disclosed above with reference to the embodiments, these are not intended to limit the present invention. Persons skilled in the art will readily appreciate that various modifications and variations can be made without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the claims.
Claims
1. A method for testing a micro light-emitting diode drive circuit, comprising: In response to completing the fabrication of a first predetermined metal layer, forming a first test path, the first test path passing through a first test transistor and a driving circuit of a test circuit to test at least a first defect before fabricating the first predetermined metal layer; as well as In response to completing the fabrication of a second predetermined metal layer, a second test path is formed, the second test path passing through a second test transistor of the test circuit and the driving circuit to detect at least a second defect occurring after fabricating the first predetermined metal layer.
2. The method for testing a micro-LED driving circuit according to claim 1, wherein: The first predetermined metal layer is a third metal layer, and the second predetermined metal layer is a last metal layer or a penultimate metal layer.
3. The method for testing a micro-LED driving circuit according to claim 1, wherein: In response to forming the first test path, a first test signal is used to turn on the first test transistor and turn off the second test transistor, wherein the first test signal is a DC signal; as well as In response to forming the second test path, a second test signal is used to turn on the second test transistor and turn off the first test transistor. The second test signal is a DC signal.
4. The method for testing a micro-LED driving circuit according to claim 1, wherein: The first test path and the second test path further pass through a light-emitting control transistor of a light-emitting control circuit.
5. The method for testing a micro-LED driving circuit according to claim 1, wherein: The first test path further passes through a first light emitting transistor of a light emitting control circuit; and The second test path further passes through a second light emitting transistor of the light emitting control circuit.
6. A micro light emitting diode driving circuit comprising: a grayscale control circuit; a driving circuit coupled to the grayscale control circuit; A test circuit is coupled to the driving circuit, the test circuit including a first test transistor and a second test transistor, in, In response to completing the fabrication of a first predetermined metal layer, forming a first test path, the first test path passing through the first test transistor of the test circuit and the driver circuit, to test at least a first defect before fabricating the first predetermined metal layer; as well as In response to completing the fabrication of a second predetermined metal layer, a second test path is formed, the second test path passing through the second test transistor of the test circuit and the driving circuit to detect at least a second defect occurring after fabricating the first predetermined metal layer.
7. The micro light emitting diode driving circuit according to claim 6, wherein: The first predetermined metal layer is a third metal layer, and the second predetermined metal layer is a last metal layer or a penultimate metal layer.
8. The micro light emitting diode driving circuit according to claim 6, wherein: In response to forming the first test path, a first test signal is used to turn on the first test transistor and turn off the second test transistor, wherein the first test signal is a DC signal; as well as In response to forming the second test path, a second test signal is used to turn on the second test transistor and turn off the first test transistor. The second test signal is a DC signal.
9. The micro light emitting diode driving circuit according to claim 6, wherein: The first test path and the second test path further pass through a light-emitting control transistor of a light-emitting control circuit.
10. The micro light emitting diode driving circuit according to claim 6, wherein: The first test path further passes through a first light emitting transistor of a light emitting control circuit; and The second test path further passes through a second light emitting transistor of the light emitting control circuit.