Reconfigurable tunneling magnetoresistive sensor array and control method thereof

Abstract

The invention provides a reconfigurable tunneling magnetoresistive sensor array and a control method thereof, and the array comprises a sensor array which comprises a plurality of tunneling magnetoresistive sensors arranged in an array; and the switch array is used for automatically switching connection modes of the tunneling magnetoresistive sensors in the sensor array under a preset condition, and the connection modes comprise series connection and parallel connection. The connection mode of the tunneling magnetoresistive sensors in the sensor array is changed by using the switch array, so that the tunneling magnetoresistive sensor array with the same hardware structure can meet the use scene with an ultra-large dynamic range in a wide dynamic mode of parallel connection of the tunneling magnetoresistive sensors; the array type TMR sensor can meet the use scene of ultra-high precision in a high-sensitivity mode of series connection of the tunneling magnetoresistive sensors, thereby meeting the requirements of sensitivity and dynamic range at the same time, and solving the problems of large size occupation, high misjudgment rate and large response delay of the existing array type TMR sensor.

Description

Technical Field

[0001] The present invention relates to the field of sensing technology, and in particular to a reconfigurable tunneling magnetoresistive sensor array and a control method thereof. Background Art

[0002] Tunneling magnetoresistance (TMR) sensors can be used to detect weak magnetic fields and convert magnetic field signals into easily processable electrical signals. They have outstanding performance in high sensitivity, temperature stability, anti-interference, miniaturization, integration, intelligence and low power consumption.

[0003] Currently, research is underway on system-level array TMR current sensors to address the spatial component of the magnetic field and environmental interference. However, existing PCB-level array TMR sensors occupy a large volume, limited by the size of power equipment, making it difficult to scale up large arrays and thus unable to meet the needs of massive deployment.

[0004] In addition, the sensitivity and dynamic range of existing TMR sensors cannot be met simultaneously, resulting in problems such as high misjudgment rate and large response delay under complex working conditions. Summary of the Invention

[0005] The object of the present invention is to provide a reconfigurable tunneling magnetoresistive sensor array and a control method thereof, so as to solve the problems of existing array-type TMR sensors such as large volume, high misjudgment rate and large response delay.

[0006] To solve the above technical problems, the present invention provides a reconfigurable tunneling magnetoresistive sensor array, comprising: A sensor array comprising a plurality of tunneling magnetoresistive sensors arranged in an array; The switch array is used to automatically switch the connection mode of the tunneling magnetoresistive sensors in the sensor array under preset conditions, wherein the connection mode includes series connection and parallel connection.

[0007] Optionally, in the reconfigurable tunneling magnetoresistive sensor array, the switch array includes a plurality of switch groups, each of the switch groups is connected to one of the tunneling magnetoresistive sensors; the switch groups include a first switch and a second switch; The output end of the first switching switch is connected to the first end of the tunneling magnetoresistive sensor, the first input end of the first switching switch is connected to the bias current, and the second input end of the first switching switch is connected to the second input end of the second switching switch in the same column and the previous row; the output end of the second switching switch is connected to the second end of the tunneling magnetoresistive sensor, and the first input end of the second switching switch is connected to the first input end of the second switching switch in the same column and the next row.

[0008] Optionally, in the reconfigurable tunneling magnetoresistive sensor array, the switch group further includes a control switch; the control switch is connected in parallel to the tunneling magnetoresistive sensor.

[0009] Optionally, in the reconfigurable tunneling magnetoresistive sensor array, the tunneling magnetoresistive sensor array also includes an analog-to-digital conversion array; the analog-to-digital conversion array includes a plurality of analog-to-digital conversion units, each of the analog-to-digital conversion units being connected to a column of tunneling magnetoresistive sensors in the sensor array through the switch group to convert the analog electrical signal output by the tunneling magnetoresistive sensor into a digital signal.

[0010] Optionally, in the reconfigurable tunneling magnetoresistive sensor array, the analog-to-digital conversion unit includes a third switching switch, an analog-to-digital converter and a bias resistor; the output end of the third switching switch is connected to the input end of the analog-to-digital converter, the first input end of the third switching switch is connected to the first input end of each second switching switch in a connected column of tunneling magnetoresistive sensors, and the second input end of the third switching switch is connected to the second input end of the last second switching switch in a connected column of tunneling magnetoresistive sensors; one end of the bias resistor is connected to the bias voltage, and the other end is connected to the second input end of the third switching switch.

[0011] To solve the above technical problems, the present invention further provides a control method for a reconfigurable tunneling magnetoresistive sensor array, which is applied to the reconfigurable tunneling magnetoresistive sensor array as described in any one of the above items. The control method includes: monitoring the analog electrical signals output by the sensor array; If it is monitored that the analog electrical signal output by the sensor array exceeds a preset range, the switch array is controlled to set the connection mode of the tunneling magnetoresistive sensors in the sensor array to a parallel connection; Otherwise, the switch array is controlled to set the connection mode of the tunneling magnetoresistive sensors in the sensor array to be a series connection.

[0012] Optionally, in the control method of the reconfigurable tunneling magnetoresistive sensor array, the switch array includes a switch group, and the switch group includes a first switch and a second switch; The method of controlling the switch array to set the connection mode of the tunneling magnetoresistive sensors in the sensor array to be parallel connection includes: Controlling the first switch to conduct the first input end to connect the bias current to the first end of the tunneling magnetoresistive sensor; controlling the second switch to conduct the first input end to connect the second end of the tunneling magnetoresistive sensor to the second end of the tunneling magnetoresistive sensor in the next row in the same column; The method of controlling the switch array to set the connection mode of the tunneling magnetoresistive sensors in the sensor array to be a series connection includes: The first first switch in each column is controlled to turn on the first input terminal to connect the bias current; the remaining first switches in each column are controlled to turn on the second input terminal, and the second switches are controlled to turn on the second input terminal to connect the second terminal of the tunneling magnetoresistive sensor to the first terminal of the tunneling magnetoresistive sensor in the next row in the same column.

[0013] Optionally, in the control method of the reconfigurable tunneling magnetoresistive sensor array, the switch group further includes a control switch connected in parallel with the tunneling magnetoresistive sensor; and the control method further includes: Determine whether the tunneling magnetoresistive sensor fails; If a tunneling magnetoresistive sensor fails, the control switch connected in parallel with the tunneling magnetoresistive sensor is closed, and the first switch connected to the tunneling magnetoresistive sensor is controlled to conduct to the second input end, and the second switch is controlled to conduct to the second input end.

[0014] Optionally, in the control method of the reconfigurable tunneling magnetoresistive sensor array, the method of determining whether the tunneling magnetoresistive sensor is failed includes: Obtaining the magnetic field change intensity of each tunneling magnetoresistive sensor; If the magnetic field change intensity of a tunneling magnetoresistive sensor is greater than a preset magnetic field change intensity threshold, it is determined that the tunneling magnetoresistive sensor has failed.

[0015] Optionally, in the control method of the reconfigurable tunneling magnetoresistive sensor array, if a tunneling magnetoresistive sensor fails, the control method further includes: The data information of the failed tunneling magnetoresistive sensor is reconstructed by using data information acquired by tunneling magnetoresistive sensors adjacent to the failed tunneling magnetoresistive sensor in the sensor array and adopting a segmented difference fusion algorithm.

[0016] Optionally, in the control method of the reconfigurable tunneling magnetoresistive sensor array, the tunneling magnetoresistive sensor array further includes an analog-to-digital conversion array, the analog-to-digital conversion array includes an analog-to-digital conversion unit, and the analog-to-digital conversion unit includes a third switch and an analog-to-digital converter; The method of controlling the switch array to set the tunneling magnetoresistive sensors in the sensor array to be connected in parallel also includes: The third switch is controlled to turn on the first input terminal, so as to connect the tunneling magnetoresistive sensors in the sensor array to the analog-to-digital converter in parallel.

[0017] The method of controlling the switch array to set the tunneling magnetoresistive sensors in the sensor array to be connected in series also includes: The third switch is controlled to turn on the second input terminal, so as to connect the tunneling magnetoresistive sensors in the sensor array to the analog-to-digital converter in series.

[0018] The present invention provides a reconfigurable tunneling magnetoresistive sensor array and control method thereof, comprising: a sensor array comprising a plurality of tunneling magnetoresistive sensors arranged in an array; and a switch array for automatically switching, under preset conditions, the connection mode of the tunneling magnetoresistive sensors in the sensor array, wherein the connection mode includes a series connection and a parallel connection. By utilizing the switch array to change the connection mode of the tunneling magnetoresistive sensors in the sensor array, the tunneling magnetoresistive sensor array with the same hardware structure can be used in both ultra-wide dynamic range scenarios using a parallel tunneling magnetoresistive sensor configuration, and ultra-high precision scenarios using a series tunneling magnetoresistive sensor configuration. This simultaneously meets both sensitivity and dynamic range requirements, resolving the issues of existing array-type TMR sensors, such as large size, high error rate, and long response delay. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 A schematic diagram of the structure of the reconfigurable tunneling magnetoresistive sensor array provided in this embodiment in series connection; Figure 2 A schematic diagram of the structure of the reconfigurable tunneling magnetoresistive sensor array provided in this embodiment in parallel connection; Figure 3 A circuit diagram of the switch structure provided in this embodiment; Figure 4 A schematic structural diagram of a reconfigurable tunneling magnetoresistive sensor array with control switches provided in this embodiment connected in series; Figure 5 A schematic diagram of the structure of a reconfigurable tunneling magnetoresistive sensor array with control switches provided in this embodiment in parallel connection; Figure 6 A circuit schematic diagram of the bias current compensation circuit provided in this embodiment; Figure 7 This is a flow chart of a control method for a reconfigurable tunneling magnetoresistive sensor array provided in this embodiment. DETAILED DESCRIPTION

[0020] The following describes the reconfigurable tunneling magnetoresistive sensor array and its control method proposed in the present invention in further detail, using the accompanying drawings and specific embodiments. It should be noted that the drawings are all simplified and not precisely scaled, and are used solely to facilitate and clearly illustrate the purpose of the embodiments of the present invention. Furthermore, the structures shown in the drawings are often portions of the actual structures. In particular, different drawings may require different emphases and may use different scales.

[0021] It should be noted that the terms "first", "second", etc. in the specification, claims, and accompanying drawings of the present invention are used to distinguish similar objects in order to describe the embodiments of the present invention, and are not used to describe a specific order or sequence. It should be understood that the structures used in this way can be interchanged under appropriate circumstances. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units that are not explicitly listed or are inherent to these processes, methods, products, or apparatuses.

[0022] This embodiment provides a reconfigurable tunneling magnetoresistive sensor array, comprising: A sensor array comprising a plurality of tunneling magnetoresistive sensors arranged in an array; The switch array is used to automatically switch the connection mode of the tunneling magnetoresistive sensors in the sensor array under preset conditions, wherein the connection mode includes series connection and parallel connection.

[0023] The reconfigurable tunneling magnetoresistive sensor array provided in this embodiment utilizes a switch array to change the connection mode of the tunneling magnetoresistive sensors in the sensor array. This allows the tunneling magnetoresistive sensor array with the same hardware structure to meet both ultra-large dynamic range usage scenarios by connecting tunneling magnetoresistive sensors in parallel with a wide dynamic range, and ultra-high precision usage scenarios by connecting tunneling magnetoresistive sensors in series with a high sensitivity. This simultaneously meets the sensitivity and dynamic range requirements, and solves the problems of existing array-type TMR sensors, such as large volume, high error rate, and large response delay.

[0024] Specifically, in this embodiment, Figure 1 and Figure 2 As shown, the tunneling magnetoresistive sensors TMR are arranged in an array, for example, in M rows and N columns, where M is an integer greater than or equal to 2, and N is an integer greater than or equal to 2.

[0025] And, in this embodiment, if Figure 1 and Figure 2 As shown, the switch array includes multiple switch groups, each of which is connected to a tunneling magnetoresistive sensor. The switch groups include a first switch Si1 and a second switch Si2, where i = 1, 2, ..., m. For example, S11 and S12 form a switch group connected to the first tunneling magnetoresistive sensor TMR; S21 and S22 form a switch group connected to the second tunneling magnetoresistive sensor TMR; ... Sm1 and Sm2 form a switch group connected to the mth tunneling magnetoresistive sensor TMR.

[0026] Specifically, in this embodiment, the output end of the first switching switch is connected to the first end of the tunneling magnetoresistive sensor, the first input end of the first switching switch is connected to the bias current Ibias, and the second input end of the first switching switch is connected to the second input end of the second switching switch in the same column and the previous row; the output end of the second switching switch is connected to the second end of the tunneling magnetoresistive sensor, and the first input end of the second switching switch is connected to the first input end of the second switching switch in the same column and the next row.

[0027] In this way, tunneling magnetoresistive sensors in the same column are connected via the first and second switches connected thereto. By changing the conduction paths of the first and second switches, the tunneling magnetoresistive sensors can be connected in parallel or in series.

[0028] Among them, such as Figure 1 As shown, the first switch in each column is switched on to the first input terminal, connecting the bias current Ibias. The remaining first switches in each column are switched on to the second input terminals, while the second switches in each column are switched on to the second input terminals. This connects the second terminal of each tunneling magnetoresistive sensor to the first terminal of the tunneling magnetoresistive sensor in the next row in the same column. In this way, the tunneling magnetoresistive sensors in the sensor array are connected in series.

[0029] As well as Figure 2 As shown, all first switches in each column are switched on at the first input terminal to connect the bias current Ibias to the first terminal of each tunneling magnetoresistive sensor. Second switches are switched on at the first input terminal to connect the second terminal of each tunneling magnetoresistive sensor to the second terminal of the tunneling magnetoresistive sensor in the next row in the same column. This achieves parallel connection of the tunneling magnetoresistive sensors in the sensor array.

[0030] In practical applications, the first switch and the second switch may be single-pole double-throw switches.

[0031] In this embodiment, a circuit structure of a switching switch is provided. The switching switch structure is entirely composed of MOS devices, thereby being compatible with CMOS technology, and can effectively improve the integration of a reconfigurable tunneling magnetoresistive sensor array and reduce area occupation.

[0032] Specifically, such as Figure 3As shown, the switching switch structure includes 8 MOS transistors (M1 to M8), wherein the drain of M1, the source of M2, the drain of M3, the source of M4, the source of M6 and the drain of M7 are connected to VIN, the source of M1, the drain of M2, the source of M3, the drain of M4, the drain of M6 and the source of M7 are connected to VOUT, the gate of M1 is connected to the gate of M3, the gate of M2 is connected to the gate of M6, the gate of M4 is connected to the gate of M5, the gate of M7 is connected to the gate of M8, the drain of M5 is connected to the drain of M4, the source of M5 is grounded, the drain of M8 is connected to the source of M7, and the source of M8 is connected to the power supply.

[0033] The first switch and the second switch each include two Figure 3 The switching switch structure shown in the figure has VOUT as the output terminal connected to the tunneling magnetoresistive sensor TMR; VIN as the input terminal, and the connection mode is determined according to the branch in the switching switch where the switching switch structure is located. For example, when the switching switch structure serves as the first input terminal of the first switching switch, its VIN is connected to the bias current Ibias.

[0034] In this embodiment, M1 , M3 , M5 and M7 are PMOS transistors, and M2 , M4 , M6 and M8 are NMOS transistors.

[0035] Furthermore, in this embodiment, Figure 4 and Figure 5 As shown, the switch group further includes a control switch SWi connected in parallel with the tunneling magnetoresistive sensor TMR. For example, the switch group consisting of S11 and S12 further includes a control switch SW1 connected in parallel with the first tunneling magnetoresistive sensor TMR; the switch group consisting of S21 and S22 further includes a control switch SW2 connected in parallel with the second tunneling magnetoresistive sensor TMR; ... The switch group consisting of Sm1 and Sm2 further includes a control switch SWm connected in parallel with the mth tunneling magnetoresistive sensor TMR.

[0036] In this way, when a tunneling magnetoresistive sensor TMR fails, such as being short-circuited or open-circuited, the control switch can be used to skip the failed tunneling magnetoresistive sensor TMR, thereby ensuring that the sensor array can operate normally.

[0037] Among them, such as Figure 4 and Figure 5As shown in the figure, assuming that the tunneling magnetoresistive sensor TMR in the second row of the first column fails, the control switch SW2 connected in parallel with the tunneling magnetoresistive sensor is closed, and the first switch S21 connected to the tunneling magnetoresistive sensor is controlled to conduct to the second input terminal, and the second switch S22 connected to the tunneling magnetoresistive sensor is controlled to conduct to the second input terminal. In this way, the faulty tunneling magnetoresistive sensor TMR in the sensor array is isolated.

[0038] Of course, in order to ensure that the number of tunneling magnetoresistive sensors TMR working in each column of the sensor array is consistent, a number of redundant tunneling magnetoresistive sensors TMR can be set in each column. Figure 4 and Figure 5 As shown, a number of tunneling magnetoresistive sensors (TMRs) are positioned at the end of each column, and each TMR is connected to the switch group in the same manner as a normal TMR. This allows a redundant TMR to fill the gap if a faulty TMR occurs in a column. The number of redundant TMRs can be appropriately set based on actual needs and is not limited in this application.

[0039] Furthermore, in this embodiment, the tunneling magnetoresistive sensor array also includes an analog-to-digital conversion array; the analog-to-digital conversion array includes a plurality of analog-to-digital conversion units, each of which is connected to a column of tunneling magnetoresistive sensors in the sensor array through the switch group to convert the analog electrical signal output by the tunneling magnetoresistive sensor into a digital signal.

[0040] Specifically, in this embodiment, Figure 1 or Figure 2 As shown, the analog-to-digital conversion unit includes a third switch S0, an analog-to-digital converter ADC, and a bias resistor R. The output end of the third switch S0 is connected to the input end of the analog-to-digital converter ADC, the first input end of the third switch S0 is connected to the first input end of each second switch in a connected column of tunneling magnetoresistive sensors, and the second input end of the third switch S0 is connected to the second input end of the last second switch in the connected column of tunneling magnetoresistive sensors; one end of the bias resistor R is connected to the bias voltage Vbias, and the other end is connected to the second input end of the third switch S0.

[0041] In this way, the tunneling magnetoresistive sensors in the sensor array can be connected in parallel or in series by switching the conduction path of the third switch, thereby ensuring that the analog-to-digital converter can receive a correct analog electrical signal.

[0042] Among them, such as Figure 1As shown, the third switch is turned on to the second input terminal, that is, the analog-to-digital converter is connected to the second input terminal of the last second switch of a column of connected tunnel magnetoresistive sensors. In this way, the analog-to-digital converter can obtain the analog electrical signal when the tunnel magnetoresistive sensors in the sensor array are connected in series.

[0043] As well as Figure 2 As shown, the third switching switch is turned on to the first input terminal, that is, the analog-to-digital converter is connected to the first input terminal of each second switching switch of a connected column of tunneling magnetoresistive sensors. In this way, the analog-to-digital converter can obtain the analog electrical signal when the tunneling magnetoresistive sensors in the sensor array are connected in parallel.

[0044] Furthermore, in this embodiment, a constant current source power supply architecture is adopted to achieve column bus current stabilization through a low-noise bandgap reference and a high-precision current mirror, thereby ensuring that power supply fluctuation is small under strong electromagnetic interference.

[0045] Preferably, in this embodiment, an independent current source may be configured for each column, thereby preventing a single point failure from causing paralysis of the entire column.

[0046] Furthermore, in order to provide a bias current to the tunneling magnetoresistive sensor TMR in the sensor array, in this embodiment, the tunneling magnetoresistive sensor array further includes a bias current compensation circuit. Specifically, Figure 6 As shown, the sources of transistors Mb1, Mb2 and Mb3 are connected to the power supply through a resistor respectively, and the gates of the three are connected and connected to the output terminal of amplifier A; the drain of Mb1 is grounded through resistor R3, and is connected to the emitter of transistor Q and the negative input terminal of amplifier A; the drain of Mb2 is grounded through resistor R2, and is connected to the emitter of transistor 8Q through variable resistor R1, and is connected to the positive input terminal of amplifier A; the collector and base of transistor Q are grounded, and the collector and base of transistor 8Q are grounded; the drain of Mb3 is connected to the source of transistor Mb4; the drain of Mb4 is grounded through variable resistor R4, and is connected to the positive input terminal of amplifier A through capacitor C L grounded and connected to one input terminal of the transconductance amplifier OTA; the drain of the transistor Mb5 is connected to the tunneling magnetoresistive sensor (in the figure, the equivalent resistor R TMR Instead), the source of Mb5 is connected through the resistor R B It is grounded and connected to the other input terminal of the transconductance amplifier OTA. The gate of Mb5 is connected to the output terminal of the transconductance amplifier OTA.

[0047] Among them, the reference voltage V is generated at the drain of Mb4 REF , which is expressed as:

[0048] In the above formula, represents the thermal voltage, Represents the base-emitter voltage of transistor Q.

[0049] By adjusting the resistance of resistors R1 and R4, the reference voltage V REF and the absolute value of the temperature coefficient, thereby controlling the temperature drift characteristics of the bias current Ibias.

[0050] Since the sensitivity of the tunneling magnetoresistive sensor is linearly related to the bias current, the negative temperature coefficient of the tunneling magnetoresistive sensor can be compensated by setting the temperature coefficient of the bias current Ibias to be positive.

[0051] The bias current noise can be expressed as:

[0052] In the above formula, G represents the loop gain.

[0053] By using a chopper-stabilized operational amplifier OTA to suppress 1 / f noise and combining it with an RC filtering circuit, we can ultimately achieve extremely low bias current noise density and significantly reduce the temperature drift of the tunneling magnetoresistive sensor.

[0054] At the same time, the transconductance amplifier OTA can form a closed-loop feedback adjustment with Mb5, thereby automatically adjusting the temperature coefficient of the pre-circuit to ensure the stability and low noise of the bias current.

[0055] In practical applications, transistors Q and 8Q can be bipolar transistors, and resistor R B is a resistor with a zero temperature coefficient, transistors Mb1, Mb2, Mb3 and Mb4 are PMOS, and Mb5 is NMOS.

[0056] This embodiment also provides a control method for a reconfigurable tunneling magnetoresistive sensor array, which is applied to the reconfigurable tunneling magnetoresistive sensor array as described above. Figure 7 As shown, the control method includes: S1, monitors the analog electrical signal output by the sensor array.

[0057] Specifically, in this embodiment, the analog electrical signal output by the sensor array can be monitored by means of an analog-to-digital converter in an analog-to-digital conversion array connected to the sensor output terminals in the reconfigurable tunneling magnetoresistive sensor array.

[0058] Preferably, in this embodiment, before monitoring the analog electrical signal output by the sensor array, a preset strategy and a preset range can be set. The preset strategy includes the circumstances under which the switch array is controlled to be in a certain connection mode, and the preset range is used for situation identification. In practical applications, the preset range can be reasonably set according to the actual usage scenario. For example, in scenarios with an ultra-large dynamic range (such as lightning strikes and short circuits), the preset strategy requires the tunneling magnetoresistive sensors in the sensor array to be connected in parallel; in scenarios with ultra-high precision (such as leakage current monitoring), the preset strategy requires the tunneling magnetoresistive sensors in the sensor array to be connected in series. In this case, the preset range can be determined based on the corresponding range in different usage scenarios, thereby ensuring that the tunneling magnetoresistive sensors in the sensor array can automatically switch to the corresponding connection mode in the corresponding usage scenario.

[0059] S2-1, if it is monitored that the analog electrical signal output by the sensor array exceeds a preset range, the switch array is controlled to set the connection mode of the tunneling magnetoresistive sensors in the sensor array to a parallel connection.

[0060] Specifically, in this embodiment, Figure 2 As shown, the first switching switch is controlled to turn on the first input end to connect the bias current to the first end of the tunneling magnetoresistive sensor; the second switching switch is controlled to turn on the first input end to connect the second end of the tunneling magnetoresistive sensor to the second end of the tunneling magnetoresistive sensor in the next row in the same column.

[0061] At the same time, in order to ensure that the analog-to-digital converter in the analog-to-digital conversion array can receive the correct analog electrical signal, in this embodiment, the third switching switch is also controlled to turn on the first input terminal to connect the tunneling magnetoresistive sensors in the sensor array to the analog-to-digital converter in parallel.

[0062] S2-2: otherwise, control the switch array to set the connection mode of the tunneling magnetoresistive sensors in the sensor array to be a series connection.

[0063] Specifically, in this embodiment, Figure 1 As shown, the first first switch in each column is controlled to turn on the first input terminal to connect to the bias current; the remaining first switches in each column are controlled to turn on the second input terminal, and the second switch is controlled to turn on the second input terminal to connect the second terminal of the tunneling magnetoresistive sensor to the first terminal of the tunneling magnetoresistive sensor in the next row in the same column.

[0064] At the same time, in order to ensure that the analog-to-digital converter in the analog-to-digital conversion array can receive the correct analog electrical signal, in this embodiment, the third switching switch is also controlled to turn on the second input terminal to connect the tunneling magnetoresistive sensors in the sensor array to the analog-to-digital converter in series.

[0065] The following describes the working principle of the reconfigurable tunneling magnetoresistive sensor array and its control method provided in this embodiment, which can achieve high precision in series and wide dynamic range in parallel. Assuming that the output impedance of a single tunneling magnetoresistive sensor at zero magnetic field is R, the impedance change when the maximum detectable magnetic field strength is T is δR, and the noise at this time is Vn; the current passing through a single tunneling magnetoresistive sensor is I, then the output signal can be expressed as I×δR, the output signal noise is Vn, and the signal-to-noise ratio is recorded as SNR U0 .

[0066] When N tunneling magnetoresistive sensors in the sensor array are connected in parallel, the output impedance is R / N, then the impedance change when the detectable magnetic field strength is T is δR / N, and the noise is Vn× When the magnetic field strength is N×T, the output signal is I×N×δR / N = I×δR. When the output signals are consistent, the magnetic field strength is expanded by N times, that is, the detectable magnetic field strength is N times larger, achieving wide dynamic range.

[0067] When N tunneling magnetoresistive sensors in the sensor array are connected in series, the output impedance is R×N. Then the impedance change when the detectable magnetic field strength is T is δR×N, and the noise is Vn× At this time, the output signal is I×δR×N, and the noise is Vn× , SNR relative to SNR U0 Improved times, that is, the sensitivity is increased by N times, thereby improving the accuracy.

[0068] Preferably, in order to ensure the normal operation of the reconfigurable tunneling magnetoresistive sensor array, in this embodiment, the control method further includes: S31, determining whether the tunneling magnetoresistive sensor is invalid.

[0069] Specifically, in this embodiment, a magnetic field change intensity threshold can be preset, and then the magnetic field change intensity of each tunneling magnetoresistive sensor is obtained; if the magnetic field change intensity of a tunneling magnetoresistive sensor is greater than the preset magnetic field change intensity threshold, the tunneling magnetoresistive sensor is judged to be failed.

[0070] In a specific embodiment, the reconfigurable tunneling magnetoresistive sensor array can be placed in a standard magnetic field environment and configured for matrix standard readout. In this case, the magnetic field change intensity of each tunneling magnetoresistive sensor should be δR. If the magnetic field change intensity of any tunneling magnetoresistive sensor exceeds a limit, such as 5%, the tunneling magnetoresistive sensor is determined to be faulty.

[0071] Of course, in practical applications, after obtaining the magnetic field change intensity of each tunneling magnetoresistive sensor, after eliminating the maximum and minimum values, the average of the other magnetic field change intensities can be taken as the standard value of the magnetic field change intensity. If the magnetic field change intensity of a tunneling magnetoresistive sensor exceeds a certain range of the standard value, the tunneling magnetoresistive sensor is determined to be faulty.

[0072] S32, if a tunneling magnetoresistive sensor fails, close the control switch connected in parallel with the tunneling magnetoresistive sensor, and control the first switch connected to the tunneling magnetoresistive sensor to turn on the second input end and the second switch connected to the tunneling magnetoresistive sensor to turn on the second input end.

[0073] Specifically, in this embodiment, Figure 4 and Figure 5 As shown, by closing the control switch connected in parallel to the tunneling magnetoresistive sensor in the first column and second row, and controlling the first switching switch connected to the tunneling magnetoresistive sensor to turn on the second input terminal and the second switching switch to turn on the second input terminal, the tunneling magnetoresistive sensor is isolated by the control switch, and the circuit is connected through the control switch without affecting the normal operation of other tunneling magnetoresistive sensors.

[0074] Preferably, when redundant tunneling magnetoresistive sensors are provided, corresponding redundant tunneling magnetoresistive sensors can be activated based on the location and number of failed tunneling magnetoresistive sensors to ensure a consistent number of operating tunneling magnetoresistive sensors in the sensor array. For example, if a tunneling magnetoresistive sensor in the second row of the first column fails, that tunneling magnetoresistive sensor is disconnected and a tunneling magnetoresistive sensor in the first column is activated to fill the gap left by the failed tunneling magnetoresistive sensor, ensuring that the number of operating tunneling magnetoresistive sensors in that column is the same as in other columns.

[0075] Furthermore, in this embodiment, if a tunneling magnetoresistive sensor fails, the data information of the failed tunneling magnetoresistive sensor can be reconstructed using the piecewise difference fusion algorithm using data information acquired by tunneling magnetoresistive sensors adjacent to the failed tunneling magnetoresistive sensor in the sensor array. The method of data reconstruction using the piecewise difference fusion algorithm is well known to those skilled in the art and will not be further described in this application.

[0076] The control method for a reconfigurable tunneling magnetoresistive sensor array provided in this embodiment can achieve series or parallel connection of the tunneling magnetoresistive sensors in the sensor array by controlling the conduction states of the first and second switches in the switch array, thereby enabling the use of a single hardware structure to address high-precision or wide-dynamic scenarios. The control method for a reconfigurable tunneling magnetoresistive sensor array provided in this embodiment monitors the operating status of the tunneling magnetoresistive sensors using the existing analog-to-digital conversion array, effectively improving the operational reliability of the reconfigurable tunneling magnetoresistive sensor array without increasing costs. The control method for a reconfigurable tunneling magnetoresistive sensor array provided in this embodiment can isolate failed tunneling magnetoresistive sensors by adding control switches, ensuring the normal operation of other tunneling magnetoresistive sensors. Furthermore, through a redundant design, it can replace failed tunneling magnetoresistive sensors to ensure the integrity of the sensor array. Furthermore, a segmented difference fusion algorithm is used to reconstruct data from failed tunneling magnetoresistive sensors, ensuring the integrity of the data output.

[0077] Furthermore, this embodiment further provides an electronic device including the reconfigurable tunneling magnetoresistive sensor array as described above.

[0078] In practical applications, electronic devices include but are not limited to household appliances, automation equipment, satellite positioning equipment, inverters, servers, vehicles, etc.

[0079] It should be noted that the various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other. In addition, the different parts between the various embodiments can also be used in combination with each other, and the present invention is not limited to this.

[0080] This embodiment provides a reconfigurable tunneling magnetoresistive sensor array and control method thereof, comprising: a sensor array comprising a plurality of tunneling magnetoresistive sensors arranged in an array; and a switch array for automatically switching, under preset conditions, the connection mode of the tunneling magnetoresistive sensors in the sensor array, wherein the connection mode includes a series connection and a parallel connection. By utilizing the switch array to change the connection mode of the tunneling magnetoresistive sensors in the sensor array, the tunneling magnetoresistive sensor array with the same hardware structure can be used in both ultra-wide dynamic range scenarios using a parallel tunneling magnetoresistive sensor configuration and ultra-high precision scenarios using a series tunneling magnetoresistive sensor configuration. This simultaneously meets both sensitivity and dynamic range requirements, addressing the issues of existing array-type TMR sensors, such as large size, high error rate, and long response delay.

[0081] The above description is only a description of the preferred embodiments of the present invention and does not limit the scope of the present invention. Any changes and modifications made by ordinary technicians in the field of the present invention based on the above disclosure shall fall within the scope of protection of the claims.

Claims

1. A reconfigurable tunneling magnetoresistive sensor array, characterized in that: include: A sensor array comprising a plurality of tunneling magnetoresistive sensors arranged in an array; The switch array is used to automatically switch the connection mode of the tunneling magnetoresistive sensors in the sensor array under preset conditions, wherein the connection mode includes series connection and parallel connection.

2. The reconfigurable tunneling magnetoresistive sensor array according to claim 1, wherein: The switch array includes a plurality of switch groups, each of which is connected to a tunneling magnetoresistive sensor; the switch group includes a first switch and a second switch; The output end of the first switching switch is connected to the first end of the tunneling magnetoresistive sensor, the first input end of the first switching switch is connected to the bias current, and the second input end of the first switching switch is connected to the second input end of the second switching switch in the same column and the previous row; the output end of the second switching switch is connected to the second end of the tunneling magnetoresistive sensor, and the first input end of the second switching switch is connected to the first input end of the second switching switch in the same column and the next row.

3. The reconfigurable tunneling magnetoresistive sensor array according to claim 2, wherein: The switch group further includes a control switch; the control switch is connected in parallel with the tunneling magnetoresistive sensor.

4. The reconfigurable tunneling magnetoresistive sensor array according to claim 2, wherein: The tunneling magnetoresistive sensor array also includes an analog-to-digital conversion array; the analog-to-digital conversion array includes a plurality of analog-to-digital conversion units, each of which is connected to a column of tunneling magnetoresistive sensors in the sensor array through the switch group to convert the analog electrical signal output by the tunneling magnetoresistive sensor into a digital signal.

5. The reconfigurable tunneling magnetoresistive sensor array according to claim 4, wherein: The analog-to-digital conversion unit includes a third switch, an analog-to-digital converter, and a bias resistor; the output end of the third switch is connected to the input end of the analog-to-digital converter, the first input end of the third switch is connected to the first input end of each second switch in a connected column of tunneling magnetoresistive sensors, and the second input end of the third switch is connected to the second input end of the last second switch in the connected column of tunneling magnetoresistive sensors; one end of the bias resistor is connected to the bias voltage, and the other end is connected to the second input end of the third switch.

6. A control method for a reconfigurable tunneling magnetoresistive sensor array, applied to the reconfigurable tunneling magnetoresistive sensor array according to any one of claims 1 to 5, characterized in that: The control method includes: monitoring the analog electrical signals output by the sensor array; If it is monitored that the analog electrical signal output by the sensor array exceeds a preset range, the switch array is controlled to set the connection mode of the tunneling magnetoresistive sensors in the sensor array to a parallel connection; Otherwise, the switch array is controlled to set the connection mode of the tunneling magnetoresistive sensors in the sensor array to be a series connection.

7. The control method of the reconfigurable tunneling magnetoresistive sensor array according to claim 6, characterized in that: The switch array includes a switch group, and the switch group includes a first switch and a second switch; The method of controlling the switch array to set the connection mode of the tunneling magnetoresistive sensors in the sensor array to be parallel connection includes: Controlling the first switch to conduct the first input end to connect the bias current to the first end of the tunneling magnetoresistive sensor; controlling the second switch to conduct the first input end to connect the second end of the tunneling magnetoresistive sensor to the second end of the tunneling magnetoresistive sensor in the next row in the same column; The method of controlling the switch array to set the connection mode of the tunneling magnetoresistive sensors in the sensor array to be a series connection includes: The first first switch in each column is controlled to turn on the first input terminal to connect the bias current; the remaining first switches in each column are controlled to turn on the second input terminal, and the second switches are controlled to turn on the second input terminal to connect the second terminal of the tunneling magnetoresistive sensor to the first terminal of the tunneling magnetoresistive sensor in the next row in the same column.

8. The control method of the reconfigurable tunneling magnetoresistive sensor array according to claim 7, characterized in that: The switch group further includes a control switch connected in parallel with the tunneling magnetoresistive sensor; and the control method further includes: Determine whether the tunneling magnetoresistive sensor fails; If a tunneling magnetoresistive sensor fails, the control switch connected in parallel with the tunneling magnetoresistive sensor is closed, and the first switch connected to the tunneling magnetoresistive sensor is controlled to conduct to the second input end, and the second switch is controlled to conduct to the second input end.

9. The control method of the reconfigurable tunneling magnetoresistive sensor array according to claim 8, characterized in that: The method for determining whether the tunneling magnetoresistive sensor is invalid includes: Obtaining the magnetic field change intensity of each tunneling magnetoresistive sensor; If the magnetic field change intensity of a tunneling magnetoresistive sensor is greater than a preset magnetic field change intensity threshold, it is determined that the tunneling magnetoresistive sensor has failed.

10. The control method of the reconfigurable tunneling magnetoresistive sensor array according to claim 8, characterized in that: If a tunneling magnetoresistive sensor fails, the control method further includes: The data information of the failed tunneling magnetoresistive sensor is reconstructed by using data information acquired by tunneling magnetoresistive sensors adjacent to the failed tunneling magnetoresistive sensor in the sensor array and adopting a segmented difference fusion algorithm.

11. The control method of the reconfigurable tunneling magnetoresistive sensor array according to claim 7, characterized in that: The tunneling magnetoresistive sensor array further includes an analog-to-digital conversion array, the analog-to-digital conversion array includes an analog-to-digital conversion unit, and the analog-to-digital conversion unit includes a third switch and an analog-to-digital converter; The method of controlling the switch array to set the tunneling magnetoresistive sensors in the sensor array to be connected in parallel also includes: The third switch is controlled to turn on the first input terminal, so as to connect the tunneling magnetoresistive sensors in the sensor array to the analog-to-digital converter in parallel. The method of controlling the switch array to set the tunneling magnetoresistive sensors in the sensor array to be connected in series also includes: The third switch is controlled to turn on the second input terminal, so as to connect the tunneling magnetoresistive sensors in the sensor array to the analog-to-digital converter in series.

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