Optical chip structure, manufacturing method and wavelength division multiplexing system

Abstract

The invention discloses an optical chip structure, a manufacturing method and a wavelength division multiplexing system, and relates to the technical field of optical communication. The optical chip structure comprises an incident waveguide, a reflecting waveguide, a dielectric layer and a filtering layer; the incident waveguide and the reflecting waveguide are respectively connected with a first end of the dielectric layer, one ends, connected with the dielectric layer, of the incident waveguide and the reflecting waveguide are arranged at intervals, the width of the dielectric layer is larger than that of the incident waveguide and that of the reflecting waveguide, a second end, opposite to the first end, of the dielectric layer is plated with a filtering layer, and transition transmission of optical signals is realized through the dielectric layer. An optical signal does not need to be directly reflected to the reflecting waveguide at an outlet of the incident waveguide, the optical signal can be reflected at the filtering layer after being emitted from the incident waveguide and passing through the dielectric layer, and then is emitted to the reflecting waveguide through the dielectric layer, and the incident waveguide and the reflecting waveguide are arranged at an interval, so that the optical signal can be directly reflected to the reflecting waveguide. Therefore, signal crosstalk of an incident waveguide outlet and a reflecting waveguide inlet can be reduced.

Description

Technical Field

[0001] The present application relates to the field of optical communication technology, and in particular to an optical chip structure, a manufacturing method, and a wavelength division multiplexing system. Background Art

[0002] Wavelength division multiplexing (WDM) is a technology that combines two or more optical signals of different wavelengths (carrying various information) at the transmitting end through a multiplexer (also known as a combiner) and couples them into the same optical fiber for transmission. At the receiving end, a demultiplexer (also known as a wavelength splitter or demultiplexer) separates the optical signals of different wavelengths, and then an optical receiver further processes them to restore the original signals. This technology of simultaneously transmitting two or more optical signals of different wavelengths on the same optical fiber is called wavelength division multiplexing.

[0003] In the prior art, the incident waveguide and the reflection waveguide are respectively connected to filters, which filter the optical signal so that the optical signal of a specific wavelength is reflected or transmitted. Since the distance between the incident waveguide and the reflection waveguide is too close, there is strong crosstalk near the intersection of the incident waveguide and the reflection waveguide. Summary of the Invention

[0004] In view of this, the present application provides an optical chip structure, a manufacturing method and a wavelength division multiplexing system to increase the distance between the incident waveguide and the reflection waveguide and reduce the signal crosstalk between the incident waveguide and the reflection waveguide.

[0005] In a first aspect of an embodiment of the present application, an optical chip structure is provided, comprising a first optical waveguide, a second optical waveguide, a dielectric layer, and a filter layer; the first optical waveguide and the second optical waveguide are respectively connected to a first end of the dielectric layer, the ends of the first optical waveguide and the second optical waveguide connected to the dielectric layer are spaced apart, the width of the dielectric layer is greater than the widths of the first optical waveguide and the second optical waveguide, a filter layer is plated on a second end of the dielectric layer opposite to the first end, the first optical waveguide is used to input an optical signal, the filter layer is used to reflect optical signals of a first wavelength band and transmit optical signals of a second wavelength band, and the second optical waveguide is used to transmit the optical signal reflected by the filter layer.

[0006] The first optical waveguide and the second optical waveguide are respectively connected to the dielectric layer. The dielectric layer is provided to realize transitional transmission of the optical signal. The optical signal does not need to be directly reflected from the outlet of the first optical waveguide to the second optical waveguide. After the optical signal is emitted from the first optical waveguide, it can be reflected at the outlet of the filter layer after passing through the dielectric layer and then enter the second optical waveguide through the dielectric layer. The first optical waveguide and the second optical waveguide are arranged at an interval, which can reduce signal crosstalk between the outlet of the first optical waveguide and the outlet of the second optical waveguide.

[0007] In one possible embodiment, the optical chip structure further includes a substrate and a cladding. The first optical waveguide, the second optical waveguide, and the dielectric layer are respectively disposed on the substrate. The cladding covers the upper surfaces of the first optical waveguide, the second optical waveguide, and the dielectric layer. The refractive indices of the first optical waveguide, the second optical waveguide, and the dielectric layer are greater than those of the substrate and the cladding. The substrate and the cladding provide coverage of the first optical waveguide, the second optical waveguide, and the dielectric layer, thereby ensuring that optical signals are transmitted through the first optical waveguide, the second optical waveguide, and the dielectric layer.

[0008] In one possible implementation, the area of one end of the first optical waveguide connected to the dielectric layer is larger than the area of the other end of the first optical waveguide. This allows for spot expansion of the optical signal in the first optical waveguide and reduces pattern spread of the optical signal in the dielectric layer.

[0009] In a possible implementation, the cross-sectional area from one end of the first optical waveguide connected to the dielectric layer to the other end of the first optical waveguide gradually decreases, thereby achieving a smooth transition of the optical signal spot expansion.

[0010] In a possible implementation, the cross-sectional area from one end of the second optical waveguide connected to the dielectric layer to the other end of the second optical waveguide gradually decreases, thereby achieving a smooth transition in reducing the spot size of the optical signal.

[0011] In one possible implementation, the area of the end of the first optical waveguide connected to the dielectric layer is smaller than the area of the end of the second optical waveguide connected to the dielectric layer, thereby ensuring that the first optical waveguide can still be incident on the second optical waveguide after diffusing in the dielectric layer.

[0012] In a possible implementation, the first optical waveguide, the second optical waveguide and / or the dielectric layer are made of at least one of the following: silicon dioxide, lithium niobate, a III-V semiconductor compound, silicon oxynitride, and a high molecular polymer.

[0013] In a possible implementation, the first optical waveguide, the second optical waveguide and / or the dielectric layer are made of doped silicon dioxide, and the impurities doped into the silicon dioxide include at least one of the following: niobium, antimony, germanium, and phosphorus.

[0014] In a possible implementation, the length of the dielectric layer is less than the Rayleigh distance of the optical signal transmitted in the dielectric layer.

[0015] In a possible implementation, the distance between the first optical waveguide and the second optical waveguide and the dielectric layer at their connection locations is greater than 1 micron.

[0016] In a possible implementation, there are a plurality of first optical waveguides and a plurality of second optical waveguides, and the plurality of first optical waveguides and the plurality of second optical waveguides are respectively connected to the dielectric layer.

[0017] In one possible embodiment, the optical chip structure further includes a first optical fiber array and a second optical fiber array, the first optical fiber array includes a first optical fiber and a second optical fiber, the first optical fiber is connected to the first optical waveguide, and the second optical fiber is connected to the second optical waveguide; the second optical fiber array includes a third optical fiber, and the third optical fiber is connected to an end of the filter layer away from the first optical waveguide.

[0018] In a possible implementation, at least a portion of the first optical waveguide and / or the second optical waveguide is in an arc shape or a straight line shape.

[0019] In a possible implementation manner, the first optical waveguide, the second optical waveguide, and the dielectric layer have the same refractive index.

[0020] In a possible implementation, the width of the dielectric layer is greater than or equal to the sum of the width of the first optical waveguide, the width of the second optical waveguide, and the distance between the first optical waveguide and the second optical waveguide.

[0021] In a second aspect of an embodiment of the present application, a method for manufacturing an optical chip structure is provided, comprising: forming a substrate; forming a first optical waveguide, a second optical waveguide, and a dielectric layer on a surface of the substrate, the first optical waveguide and the second optical waveguide being respectively connected to a first end of the dielectric layer, the width of the dielectric layer being greater than the width of the first optical waveguide and the second optical waveguide, and the ends of the first optical waveguide and the second optical waveguide connected to the dielectric layer being spaced apart; forming a cladding on an upper surface of the first optical waveguide, the second optical waveguide, and the dielectric layer, the refractive index of the first optical waveguide, the second optical waveguide, and the dielectric layer being greater than the refractive index of the substrate and the cladding; and forming a filter layer on an end face of the cladding.

[0022] In a third aspect of an embodiment of the present application, a wavelength division multiplexing system is provided, comprising a signal receiving end, a signal transmitting end, and an optical chip structure as described in any one of the first aspects, wherein the optical signal receiving end receives an optical signal and couples the optical signal to the optical chip structure, and the signal transmitting end is used to send the optical signal output by the optical chip structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] FIG1( a ) is a schematic diagram of the optical chip structure provided in an embodiment of the present application;

[0024] FIG1( b ) is a schematic diagram of another optical chip structure provided in an embodiment of the present application;

[0025] FIG1( c ) is a schematic diagram of another optical chip structure provided in an embodiment of the present application;

[0026] Figure 2 This is a schematic diagram of another optical chip structure provided in an embodiment of the present application;

[0027] Figure 3 This is a schematic diagram of another optical chip structure provided in an embodiment of the present application;

[0028] Figure 4 This is a schematic diagram of another optical chip structure provided in an embodiment of the present application;

[0029] Figure 5 This is a schematic diagram of another optical chip structure provided in an embodiment of the present application;

[0030] Figure 6 This is a schematic diagram of another optical chip structure provided in an embodiment of the present application;

[0031] Figure 7 This is a schematic diagram of another optical chip structure provided in an embodiment of the present application;

[0032] Figure 8 This is a schematic diagram of another optical chip structure provided in an embodiment of the present application;

[0033] Figure 9(a)-Figure 9(c) is a schematic diagram of an optical chip structure sequentially formed by the method for manufacturing an optical chip structure provided in an embodiment of the present application;

[0034] Figure 10 This is a schematic diagram of another optical chip structure provided in an embodiment of the present application;

[0035] Figure 11 is a flow chart of a method for manufacturing an optical chip structure provided in an embodiment of the present application;

[0036] Figure 12 It is a schematic diagram of a wavelength division multiplexing system provided in an embodiment of the present application. DETAILED DESCRIPTION

[0037] The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application.

[0038] For ease of understanding, the English abbreviations and related technical terms involved in the embodiments of this application are explained and described below.

[0039] It should be clear that the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0040] The terms used in the embodiments of the present application are for the purpose of describing specific embodiments only and are not intended to limit the present application. The singular forms "a", "an", "the" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms unless the context clearly indicates otherwise.

[0041] It should be understood that the term "and / or" as used herein is simply a term used to describe the existence of three possible relationships between related objects. For example, "A and / or B" can represent the existence of A alone, the existence of both A and B, and the existence of B alone. Furthermore, the character " / " in this document generally indicates that the related objects are in an "or" relationship.

[0042] The word "if," as used herein, may be interpreted as "at the time of" or "when" or "in response to determining" or "in response to detecting," depending on the context. Similarly, the phrases "if it is determined" or "if (stated condition or event) is detected" may be interpreted as "when it is determined" or "in response to the determination" or "when detecting (stated condition or event)" or "in response to detecting (stated condition or event)," depending on the context.

[0043] It should be understood that the terms “first”, “second”, etc. used in this application are only used for the purpose of distinguishing descriptions, and cannot be understood as indicating or implying relative importance, nor can they be understood as indicating or implying an order.

[0044] In the description of this application, the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they should not be understood as limiting this application.

[0045] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "install", "connect", "connect", and "set" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, a conflicting connection, or an integrated connection. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0046] Wavelength division multiplexing (WDM) is a fiber optic transmission technology that allows multiple optical signals of different wavelengths to be coupled and transmitted over the same optical fiber. This method can increase the available bandwidth of the optical fiber, thereby reducing the need for expensive optical fiber resources.

[0047] CWDM (Coarse Wavelength Division Multiplexing) is an optical communication technology that multiplexes and demultiplexes optical signals by simultaneously transmitting multiple optical signals of different wavelengths over the same optical fiber. Since optical signals corresponding to different wavelengths are independent of each other, wavelength division multiplexing allows them to be transmitted simultaneously, improving the transmission capacity of optical fibers.

[0048] The following describes the application scenarios of this application:

[0049] In data centers, CWDM can be used for communication between servers and connections to external networks. By using CWDM technology, the optical signals generated by different servers can be multiplexed, saving fiber resources and improving the overall transmission capacity of the data center.

[0050] In wireless communication networks, CWDM can be used for optical transmission between base stations. By multiplexing the optical signals generated by different base stations, the number of optical fibers used can be reduced, thus lowering construction costs.

[0051] In video surveillance systems, CWDM can be used to transmit video signals from multiple monitoring points to a central control room. By using CWDM technology, video signals can be multiplexed, reducing the use of optical fibers and lowering system maintenance costs.

[0052] In high-speed broadband access networks, CWDM can be used to distribute optical fiber to users. By using CWDM technology, optical signals generated by different users can be multiplexed, improving the transmission capacity of the access network.

[0053] In the application scenario of DQODN for optical fiber detection, a wavelength division multiplexing (WDM) module is required to separate the detection light from the service light. The present application relates to a wavelength division multiplexing (WDM) technology to solve the problem of crosstalk between the incident waveguide and the reflection waveguide at the intersection. Specifically, the present application relates to an optical chip structure, a method for manufacturing an optical chip structure, and a wavelength division multiplexing (WDM) system, in which the incident waveguide and the reflection waveguide are respectively connected through a dielectric layer, so that the incident waveguide and the reflection waveguide are spaced apart, thereby increasing the spacing between the incident waveguide and the reflection waveguide and reducing the crosstalk between the incident waveguide and the reflection waveguide. Optionally, the present application can be applied to the CWDM field.

[0054] Combine Figure 12 In a wavelength division multiplexing system, it includes a signal receiving end, a signal transmitting end and an optical chip structure as described in any one of the first aspects, the optical signal receiving end receives the optical signal and couples the optical signal to the optical chip structure, and the signal transmitting end transmits the optical signal output by the optical chip structure.

[0055] by Figure 1(a)-Figure 1(c) and Figure 2Taking the optical chip structure provided in the embodiment of the present application as an example, a detailed explanation is given. Figure 1(a)-Figure 1(c) and Figure 2 Cross-sectional views of different optical chip structures. Figure 1(a)-Figure 1(c) and Figure 2 Only the connection between two optical waveguides and the dielectric layer 104 is described. The optical chip structure includes a first optical waveguide 102, a second optical waveguide 103, a dielectric layer 104, and a filter layer 105. The first optical waveguide 102 and the second optical waveguide 103 are respectively connected to the first end of the dielectric layer 104, and the ends of the first optical waveguide 102 and the second optical waveguide 103 connected to the dielectric layer 104 are spaced apart. The filter layer 105 is plated on the second end of the dielectric layer 104 opposite to the first end.

[0056] The first optical waveguide 102 is used to input optical signals, and the second optical waveguide 103 is used to transmit optical signals reflected by the filter layer 105. In other words, the first optical waveguide 102 is an incident waveguide, i.e., a waveguide that transmits the input optical signal. Here, "input" can also be understood as input to the dielectric layer 104. The second optical waveguide is a reflection waveguide, i.e., a waveguide that transmits the reflected optical signal. Here, the reflected optical signal can also refer to the optical signal reflected by the filter layer 105. In alternative embodiments, the first optical waveguide 102 can also be a reflection waveguide, and the first optical waveguide 102 can also be an incident waveguide. For example, in the case of an uplink optical signal, the first optical waveguide 102 can be an incident waveguide, and the second optical waveguide 103 can be a reflection waveguide. In the case of a downlink optical signal, the second optical waveguide 103 can be an incident waveguide, and the first optical waveguide 102 can also be a reflection waveguide.

[0057] The width of the dielectric layer 104 is greater than the width of the first optical waveguide 102 and the second optical waveguide 103, so that the ends of the first optical waveguide 102 and the second optical waveguide 103 connected to the dielectric layer 104 are spaced apart. Figure 1(a)-Figure 1(c) and Figure 2 As shown, the widths of the first optical waveguide 102, the second optical waveguide 103 and the dielectric layer 104 are all Figure 1(a)-Figure 1(c) and Figure 2 The length direction of the dielectric layer 104 refers to FIG. 1 (a) and Figure 2 The heights of the first optical waveguide 102, the second optical waveguide 103 and the dielectric layer 104 refer to the vertical direction of FIG. 1 (a) and Figure 2 The direction of the plane, or Figure 10 The up and down directions in .

[0058] The dielectric layer 104 can be used for transition in the optical signal transmission path. In the dielectric layer 104, the optical signal is incident from the position where the first optical waveguide 102 is connected to the dielectric layer 104. At the end opposite to the first optical waveguide 102, the optical signal is incident on the filter layer 105, achieving transmission and reflection of the optical signal. The reflected optical signal can be incident on the second optical waveguide 103, and the transmitted optical signal can continue to be transmitted along the direction of optical path propagation.

[0059] The filter layer 105 is configured to reflect optical signals of a first wavelength band and transmit optical signals of a second wavelength band. In one embodiment, the filter layer 105 may be a thin-film filter, utilizing the optical properties of specialized thin-film materials to separate or multiplex optical signals of different wavelengths. In one implementation, the filter layer 105 can reflect optical signals of a first wavelength and transmit optical signals of a second wavelength band. The first wavelength may refer to a specific wavelength. This allows separation of the optical signals of the first wavelength while transmitting all optical signals except the first wavelength. In one implementation, the filter layer 105 can reflect optical signals of a first wavelength band and transmit optical signals of a second wavelength. The second wavelength may refer to a specific wavelength. This allows transmission of the optical signals of the second wavelength while reflecting all optical signals except the second wavelength. In one implementation, the filter layer 105 can transmit optical signals of a certain energy level and reflect optical signals of a certain energy level, achieving both reflection and transmission of optical signal wavelength bands. In one implementation, the filter layer 105 may be composed of multiple layers of different transmissive media to reflect or transmit optical signals of multiple wavelengths. In one implementation, the filter layer 105 may also be made of a fully transparent or fully reflective material.

[0060] The first optical waveguide 102 and the second optical waveguide 103 are respectively connected to the dielectric layer 104. The dielectric layer 104 enables transitional transmission of optical signals. The optical signal does not need to be directly reflected from the outlet of the first optical waveguide 102 to the second optical waveguide 103. After exiting the first optical waveguide 102, the optical signal can be reflected from the filter layer 105 after passing through the dielectric layer 104, and then enter the second optical waveguide 103 through the dielectric layer 104. The first optical waveguide 102 and the second optical waveguide 103 are spaced apart, which can reduce signal crosstalk between the outlet of the first optical waveguide 102 and the inlet of the second optical waveguide 103.

[0061] In one embodiment, as shown in Figure 1(b), the spacing D between the first and second optical waveguides 102, 103 and the dielectric layer 104 is greater than or equal to 1 micron. Spacing refers to the distance between the surfaces of the first and second optical waveguides 102, 103. When there are multiple first and second optical waveguides 102, 103, the spacing between adjacent optical waveguides is greater than 1 micron. Theoretically, the maximum spacing between the first and second optical waveguides 102, 103 can be infinite. However, in practice, given that the structures of different optical chips may vary, no maximum spacing is imposed. Optionally, the spacing D between the first and second optical waveguides 102, 103 and the dielectric layer 104 can be less than 20 microns. For example, spacing D can be 1 micron, 1.5 microns, 2 microns, 2.5 microns, 3 microns, etc.

[0062] In one embodiment, the width of the dielectric layer 104 is greater than or equal to the sum of the width of the first optical waveguide 102, the width of the second optical waveguide 103, and the distance D between the first optical waveguide 102 and the second optical waveguide 103. In other words, the dielectric layer 104 may be a rectangular region. When there are multiple first optical waveguides 102 and second optical waveguides 103, the width of the dielectric layer 104 may be greater than or equal to the sum of the widths of all optical waveguides and the distances between all adjacent waveguides.

[0063] In one embodiment, the first optical waveguide 102 or the second optical waveguide 103 may be a planar lightwave circuit (PLC). Optionally, the height of the dielectric layer 104 may be the same as that of the first optical waveguide 102 and the second optical waveguide 103, which may facilitate processing and manufacturing.

[0064] In one embodiment, as shown in Figures 9(a), 9(b), and 9(c), the optical chip structure of the present application further includes a substrate 101 and a cladding 106. The first optical waveguide 102, the second optical waveguide 103, and the dielectric layer 104 are respectively disposed on the substrate 101, and the cladding 106 covers the first optical waveguide 102, the second optical waveguide 103, the dielectric layer 104, and the upper surface of the substrate 101. As shown in Figure 9(c), the cladding 106 covers the upper surface of the substrate 101 without interrupting the optical path. In other words, the substrate 101 and the cladding 106 cover the first optical waveguide 102, the second optical waveguide 103, and the dielectric layer 104 in the upper and lower directions.

[0065] The refractive index of the first optical waveguide 102, the second optical waveguide 103, and the dielectric layer 104 is greater than that of the substrate 101 and the cladding 106. This ensures that light is transmitted through the first optical waveguide 102, the second optical waveguide 103, and the dielectric layer 104, reducing loss.

[0066] In one embodiment, the filter layer 105 is disposed on the right end surface of the cladding layer 106, the dielectric layer 104, and the substrate 101. The "upper" and "right" here refer to the positions relative to the figures in FIG9(a), FIG9(b), and FIG9(c). Figure 9(a) to Figure 9(c) This is a schematic diagram of the optical chip structure manufacturing process. Specifically, filter layer 105 blocks the optical signal transmission path, forcing the optical signal to be filtered by filter layer 105, allowing only the required optical signal to be transmitted or reflected. It should be noted that filter layer 105 only needs to cover the end face of dielectric layer 104. However, for ease of processing, filter layer 105 can also cover the right end face of dielectric layer 104, substrate 101, and cladding layer 106 simultaneously.

[0067] In a possible implementation, the dielectric layer 104 is made of at least one of the following materials: silicon dioxide, lithium niobate, a III-V semiconductor compound, silicon oxynitride, and a high molecular polymer.

[0068] In one possible embodiment, dielectric layer 104 is made of doped silicon dioxide. The silicon dioxide is doped with impurities including at least one of niobium, antimony, germanium, and phosphorus. The proportion of doped impurities is not limited; it is intended only to ensure that the refractive index of dielectric layer 104 is greater than that of substrate 101 and cladding 106.

[0069] In one embodiment, the first optical waveguide 102 and the second optical waveguide 103 are made of doped silicon dioxide. The impurities doped into the silicon dioxide include at least one of niobium, antimony, germanium, and phosphorus. The ratio of the doped impurities is not limited; it is intended only to ensure that the refractive index of the first optical waveguide 102 and the second optical waveguide 103 is greater than that of the substrate 101 and the cladding 106.

[0070] In one possible implementation, the first optical waveguide 102 and the second optical waveguide 103 may also be made of an electro-optic material exhibiting a linear electro-optic effect. The dielectric layer 104 may be made of lithium niobate, an electro-optic polymer, tantalum niobate, barium titanate, or lead zirconate titanate. For example, the first optical waveguide 102 and the second optical waveguide 103 may be made of lithium niobate, where the Z crystal axis of the lithium niobate crystal is perpendicular to the direction of extension of the optical waveguide and is the rotational symmetry axis of the lithium niobate crystal. Light propagates through the optical waveguides by total internal reflection.

[0071] In one possible implementation, the materials of the first optical waveguide 102, the second optical waveguide 103, and the dielectric layer 104 can be the same, which facilitates processing and manufacturing. In other words, the refractive index of the first optical waveguide 102, the second optical waveguide 103, and the dielectric layer 104 is the same. The materials of the first optical waveguide 102, the second optical waveguide 103, and the dielectric layer 104 are not further described herein.

[0072] In one possible embodiment, the material of the substrate 101 can be silicon, lithium niobate, silicon dioxide, quartz, silicon carbide or sapphire, etc. Of course, the material of the substrate can also be other elemental semiconductor materials or compound semiconductor materials. The substrate 101 can provide mechanical support, such as providing mechanical support for the cladding.

[0073] In one embodiment, Figure 5-Figure 8 As shown, Figure 5-Figure 8 This is a schematic diagram of an optical chip structure incorporating multiple optical waveguides. Multiple first optical waveguides 102 and multiple second optical waveguides 103 are provided, each connected to a dielectric layer 104. Specifically, multiple first optical waveguides 102 and multiple second optical waveguides 103 are arrayed on a substrate 101, with all optical waveguides connected simultaneously via a single dielectric layer 104, thereby improving optical signal transmission efficiency. The width of dielectric layer 104 can be greater than the width of all optical waveguides to ensure consistent spacing between the different optical waveguides. It should be noted that the number of first optical waveguides 102 and second optical waveguides 103 is not limited herein.

[0074] Optionally, the first optical waveguide 102 and the second optical waveguide 103 may exist in pair, and the second optical waveguide 103 may transmit the optical signal incident from the corresponding first optical waveguide 102 and reflected by the filter layer 105 .

[0075] In one embodiment, if Figure 3 、 Figure 4 、 Figure 7 and Figure 8 As shown, Figure 3 、 Figure 4 、 Figure 7 and Figure 8 They are respectively the structures after the light array and the above-mentioned optical waveguide are packaged. The optical chip structure also includes a first optical fiber array 107 and a second optical fiber array 108. The first optical fiber array 107 includes a first optical fiber 1071 and a second optical fiber 1072. The first optical fiber 1071 is connected to the first optical waveguide 102, and the second optical fiber 1072 is connected to the second optical waveguide 103; the second optical fiber array 108 includes a third optical fiber 1081, which is connected to the end of the filter layer 105 away from the first optical waveguide 102. The third optical fiber 1081 is used to transmit the optical signal transmitted by the filter layer 105.

[0076] Here, the optical signal is input into the first optical waveguide 102 through the first optical fiber array 107. There is no limit on the number of first optical fibers 1071 and second optical fibers 1072. The first optical fibers 1071 are connected to the first optical waveguide 102 accordingly, and one first optical fiber 1071 can be connected to one first optical waveguide 102.

[0077] The filter layer 105 is used to reflect all optical signals input from the first optical waveguide 102, and the reflected optical signals are input to the corresponding second optical waveguide 103. Here, the entrance of the second optical waveguide 103 ( Figure 3 The right end of the second optical waveguide 103 in the middle) can correspond to the position of the optical signal reflected by the filter layer 105, thereby receiving the reflected optical signal. The outlet of the second optical waveguide 103 ( Figure 3 The left end of the second optical waveguide 103 in the optical fiber 107 corresponds to the second optical fiber 1072, so as to output the optical signal in the second optical waveguide 103.

[0078] It should be noted that the first optical fiber 1071 and the second optical fiber 1072 are essentially the same optical fiber, and are only distinguished and described here for the convenience of description.

[0079] In an optional embodiment, the number of third optical fibers 1081 can be the same as the number of first optical fibers 1071, one third optical fiber 1081 corresponds to one first optical fiber 1071, and the optical signal output by the first optical fiber 1071 can be input to the third optical fiber 1081. Figure 7 and Figure 8 As shown, the third optical fiber 1081 may be a structure tilted up and down, and the third optical fiber 1081 may be parallel to the tangent direction of the outlet of the first optical waveguide 102 .

[0080] In an optional embodiment, as shown in Figures 1(a) and 1(c), the area of one end of the first optical waveguide 102 connected to the dielectric layer 104 is equal to the area of the other end of the first optical waveguide 102. Alternatively, as shown in Figure 1(a), the cross-sectional area of the first optical waveguide 102 remains unchanged along the direction of optical signal propagation.

[0081] In an optional embodiment, as shown in FIG1(b), Figures 2 to 4 As shown, the area of the end of the first optical waveguide 102 connected to the dielectric layer 104 is larger than the area of the other end of the first optical waveguide 102. Alternatively, along the direction of optical signal propagation from the first optical waveguide 102 to the dielectric layer 104, the area of the exit of the first optical waveguide 102 is larger than the area of the entrance. This allows the optical signal spot to be enlarged in the first optical waveguide 102, reducing the spread of the optical signal pattern in the dielectric layer 104.

[0082] Optionally, the area of the outlet of the first optical waveguide 102 is not greater than three times the area of the inlet of the first optical waveguide 102. For example, the inlet area of the first optical waveguide 102 may be 5 microns, and the outlet area may be 10 microns. The size of the first optical waveguide 102 is not limited here and is subject to actual use.

[0083] Optionally, at least a portion of the first optical waveguide 102 is in an arc or straight line shape. Figure 2 、 Figure 4 、 Figure 6 and Figure 8 As shown, the first optical waveguide 102 is a straight line. Figure 3 、 Figure 5 and Figure 7 As shown, the first optical waveguide 102 is arc-shaped, which can increase the optical signal transmission path under the premise of the same chip length.

[0084] As shown in Figure 1(c), the first optical waveguide 102 comprises multiple sequentially connected optical waveguide segments, including a first segment 1021, a second segment 1022, and a third segment 1023. The first segment 1021 and the third segment 1023 are straight segments, while the second segment 1022 is an arcuate segment. There is no limit to the number of segments in the first optical waveguide 102. Optionally, the curvature radius of the arcuate segments in the first optical waveguide 102 can be greater than 20 mm.

[0085] In an optional embodiment, as shown in Figures 1(a) and 1(c), the area of one end of the second optical waveguide 103 connected to the dielectric layer 104 is equal to the area of the other end of the second optical waveguide 103. Alternatively, as shown in Figure 1(a), the cross-sectional area of the second optical waveguide 103 remains unchanged along the direction of optical signal propagation.

[0086] In an optional embodiment, as shown in FIG1(b), Figures 2 to 4 As shown, the area of the end of the second optical waveguide 103 connected to the dielectric layer 104 is larger than the area of the other end of the second optical waveguide 103. Alternatively, along the direction of optical signal propagation from the dielectric layer 104 to the second optical waveguide 103, the area of the entrance of the second optical waveguide 103 (the right end of the second optical waveguide 103 in FIG1(b) ) is larger than the area of the entrance. This reduces the optical signal spot size in the second optical waveguide 103.

[0087] Optionally, the area of the entrance of the second optical waveguide 103 is not greater than five times the area of the exit of the second optical waveguide 103. For example, the area of the entrance of the second optical waveguide 103 may be 20 microns, and the area of the exit of the second optical waveguide 103 may be 5 microns. The size of the second optical waveguide 103 is not limited here and is subject to actual use.

[0088] Optionally, at least a portion of the second optical waveguide 103 is in an arc or straight line shape. Figure 2 、 Figure 4 、 Figure 6 and Figure 8 As shown, the second optical waveguide 103 is a straight line. Figure 3 、 Figure 5 and Figure 7 As shown, the second optical waveguide 103 is arc-shaped, which can increase the optical signal transmission path under the premise of the same chip length.

[0089] As shown in FIG1(c), the second optical waveguide 103 includes multiple sequentially connected optical waveguide segments, including a fourth segment 1031, a fifth segment 1032, and a sixth segment 1033. The fourth segment 1031 and the sixth segment 1033 are straight segments, and the fifth segment 1032 is an arc segment. The number of segments in the second optical waveguide 103 is not limited.

[0090] In one embodiment, as shown in FIG1( b ), the cross-sectional area of the first optical waveguide 102 gradually decreases from the end where the first optical waveguide 102 is connected to the dielectric layer 104 to the other end of the first optical waveguide 102. Alternatively, the cross-sectional area of at least one section of the first optical waveguide 102 gradually increases as the optical signal propagates from the first optical waveguide 102 toward the dielectric layer 104. This allows for stable spot expansion during optical signal propagation.

[0091] In one embodiment, as shown in Figure 1(b), the cross-sectional area of the second optical waveguide 103 gradually decreases from the end where the optical signal is connected to the dielectric layer 104 to the other end of the second optical waveguide 103. Alternatively, the cross-sectional area of at least one section of the second optical waveguide 103 gradually decreases along the direction in which the optical signal propagates from the dielectric layer 104 toward the second optical waveguide 103. This allows for a stable reduction in cross-sectional area during optical signal propagation.

[0092] In one embodiment, as shown in Figure 1(b), the area of the end of the first optical waveguide 102 connected to the dielectric layer 104 is smaller than the area of the end of the second optical waveguide 103 connected to the dielectric layer 104. Alternatively, the area of the entrance of the second optical waveguide 103 is larger than the area of the exit of the first optical waveguide 102 (the right end of the first optical waveguide 102 in Figure 1(b)). This arrangement has the advantage that the optical signal emitted from the first optical waveguide 102 into the dielectric layer 104 will diffuse, resulting in an increased light spot size. A larger entrance area for the second optical waveguide 103 ensures that light reflected from the filter layer 105 is input into the second optical waveguide 103. Alternatively, the entrance area of the second optical waveguide 103 can be 1 to 3 times the area of the exit of the first optical waveguide 102.

[0093] In one embodiment, the length of the dielectric layer 104 is less than the Rayleigh distance of the light spot of the optical signal transmitted in the dielectric layer 104. The length of the dielectric layer 104 refers to Figures 1(a) to 10 In the left and right directions, the Rayleigh distance refers to the distance the light beam travels along its direction of travel, extending from the cross section at the beam waist to a cross section with an area twice the area of its waist.

[0094] This embodiment provides a method for manufacturing an optical chip structure. Figure 11 Shown, including:

[0095] S1101: forming a substrate 101;

[0096] S1102: forming a first optical waveguide 102, a second optical waveguide 103, and a dielectric layer 104 on a surface of the substrate, wherein the first optical waveguide 102 and the second optical waveguide 103 are respectively connected to a first end of the dielectric layer 104, and the ends of the first optical waveguide 102 and the second optical waveguide 103 connected to the dielectric layer 104 are spaced apart, and a width of the dielectric layer 104 is greater than a width of the first optical waveguide 102 and the second optical waveguide 103;

[0097] In one possible implementation, the first optical waveguide 102, the second optical waveguide 103, and the dielectric layer 104 may be deposited on the substrate 101, but this is not very efficient. In another possible implementation, a mask may be formed on the substrate 101, and then the first optical waveguide 102, the second optical waveguide 103, and the dielectric layer 104 may be obtained by etching. For example, chemical vapor deposition (CVD), sputtering, lift-off, and other processes may be used.

[0098] S1103: Forming a cladding layer 106 on the upper surfaces of the substrate 101, the first optical waveguide 102, the second optical waveguide 103, and the dielectric layer 104. The refractive indexes of the first optical waveguide 102, the second optical waveguide 103, and the dielectric layer 104 are greater than the refractive indexes of the substrate 101 and the cladding layer 106. Optionally, the cladding layer 106 can be formed by chemical vapor deposition.

[0099] S1104 : forming a filter layer 105 on the end faces of the substrate 101 , the dielectric layer 104 and the cladding layer 106 .

[0100] In one possible embodiment, the filter layer 105 can be formed by chemical vapor deposition, physical vapor deposition (PVD) (such as electron beam evaporation, magnetron sputtering, or ion beam deposition) of a filter material. In one possible embodiment, the filter layer 105 can be formed on the right end surface of the substrate 101, the dielectric layer 104, and the cladding layer 106 using an existing TFF sheet.

[0101] Optionally, after S1104, the method may further include: connecting the first optical fiber array 107 and the second optical fiber array 108, so that the first optical fiber 1071 of the first optical fiber array 107 is connected to the first optical waveguide 102, and the second optical fiber 1072 is connected to the second optical waveguide 103, so that the third optical fiber 1081 in the second optical fiber array 108 corresponds to the outlet of the first optical waveguide 102.

[0102] The above is a specific implementation of the present application. It should be understood that the above embodiments are merely illustrative of the technical solutions of the present application, and are not intended to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they may modify the technical solutions described in the aforementioned embodiments, or replace some of the technical features therein with equivalents. Such modifications or replacements do not deviate from the essence of the corresponding technical solutions within the scope of the various embodiments of the present application.

Claims

1. An optical chip structure, characterized in that: The optical fiber optical fiber transmission device comprises a first optical waveguide, a second optical waveguide, a dielectric layer, and a filter layer; the dielectric layer comprises a first end and a second end opposite to each other, the first optical waveguide and the second optical waveguide are respectively connected to the first end, the first optical waveguide and the second optical waveguide are spaced apart at one end connected to the first end, the width of the dielectric layer is greater than the widths of the first optical waveguide and the second optical waveguide, the second end of the dielectric layer is plated with a filter layer, the first optical waveguide is used to input an optical signal, the filter layer is used to reflect optical signals of a first wavelength band and transmit optical signals of a second wavelength band, and the second optical waveguide is used to transmit the optical signal reflected by the filter layer.

2. The optical chip structure according to claim 1, characterized in that: The optical waveguide further includes a substrate and a cladding. The first optical waveguide, the second optical waveguide, and the dielectric layer are respectively arranged on the substrate. The cladding covers the surfaces of the first optical waveguide, the second optical waveguide, and the dielectric layer and is connected to the substrate. The refractive index of the first optical waveguide, the second optical waveguide, and the dielectric layer is greater than the refractive index of the substrate and the cladding.

3. The optical chip structure according to claim 1, wherein: An area of one end of the first optical waveguide connected to the dielectric layer is larger than an area of the other end of the first optical waveguide.

4. The optical chip structure according to claim 3, characterized in that: The cross-sectional area from one end of the first optical waveguide connected to the dielectric layer to the other end of the first optical waveguide gradually decreases.

5. The optical chip structure according to claim 3, characterized in that: The cross-sectional area from one end of the second optical waveguide connected to the dielectric layer to the other end of the second optical waveguide gradually decreases.

6. The optical chip structure according to claim 1, characterized in that: An area of one end of the first optical waveguide connected to the dielectric layer is smaller than an area of one end of the second optical waveguide connected to the dielectric layer.

7. The optical chip structure according to claim 1, characterized in that: The first optical waveguide, the second optical waveguide and / or the dielectric layer are made of at least one of the following: silicon dioxide, lithium niobate, II and IV group semiconductor compounds, silicon oxynitride and high molecular polymer.

8. The optical chip structure according to claim 7, characterized in that: The first optical waveguide, the second optical waveguide and / or the dielectric layer are made of doped silicon dioxide, and the impurities doped into the silicon dioxide include at least one of the following: niobium, antimony, germanium and phosphorus.

9. The optical chip structure according to claim 1, wherein: The length of the dielectric layer is less than the Rayleigh distance of the optical signal transmitted in the dielectric layer.

10. The optical chip structure according to claim 1, wherein: The distance between the first optical waveguide, the second optical waveguide and the dielectric layer at their connection locations is greater than 1 micron.

11. The optical chip structure according to claim 1, wherein: There are a plurality of the first optical waveguides and a plurality of the second optical waveguides, and the plurality of the first optical waveguides and the plurality of the second optical waveguides are respectively connected to the dielectric layer.

12. The optical chip structure according to claim 1, wherein: The invention also includes a first optical fiber array and a second optical fiber array, wherein the first optical fiber array includes a first optical fiber and a second optical fiber, the first optical fiber is connected to the first optical waveguide, and the second optical fiber is connected to the second optical waveguide; The second optical fiber array includes a third optical fiber connected to an end of the filter layer away from the first optical waveguide.

13. The optical chip structure according to claim 1, wherein: At least a portion of the first optical waveguide and / or the second optical waveguide is in an arc shape or a straight line shape.

14. The optical chip structure according to claim 1, wherein: The first optical waveguide, the second optical waveguide, and the dielectric layer have the same refractive index.

15. The optical chip structure according to claim 1, wherein: The width of the dielectric layer is greater than or equal to the sum of the width of the first optical waveguide, the width of the second optical waveguide, and the distance between the first optical waveguide and the second optical waveguide.

16. A method for manufacturing an optical chip structure, characterized in that: include: forming a substrate; A first optical waveguide, a second optical waveguide, and a dielectric layer are formed on the surface of the substrate, wherein the first optical waveguide and the second optical waveguide are respectively connected to a first end of the dielectric layer, the width of the dielectric layer is greater than the width of the first optical waveguide and the second optical waveguide, and the ends of the first optical waveguide and the second optical waveguide connected to the dielectric layer are spaced apart; forming a cladding layer on the upper surfaces of the substrate, the first optical waveguide, the second optical waveguide, and the dielectric layer, wherein the refractive indexes of the first optical waveguide, the second optical waveguide, and the dielectric layer are greater than the refractive indexes of the substrate and the cladding layer; A filter layer is formed on the end surface of the cladding layer.

17. A wavelength division multiplexing system, characterized in that: It includes a signal receiving end, a signal transmitting end and an optical chip structure as described in any one of claims 1 to 15, wherein the signal receiving end receives an optical signal and couples the optical signal to the optical chip structure, and the signal transmitting end is used to send the optical signal output by the optical chip structure.

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