Wafer defect data alignment method and device under double detection channels and storage medium

Abstract

The invention discloses a wafer defect data alignment method and device under double detection channels and a storage medium, and the method comprises the steps: respectively obtaining defect masks of wafer images under the two detection channels, and taking a union set to obtain a comprehensive mask; performing regional connectivity analysis on the comprehensive mask to obtain a connected domain and connected domain parameter information; respectively intercepting corresponding defect areas in the defect masks under the two detection channels based on the connected domain parameter information; and dividing the defects in the defect areas which have the defects and correspond to the same connected domain on the comprehensive mask into the same defect group. According to the invention, data alignment can be carried out on the defects identified in the wafer images obtained from the two different detection channels, and the defect classification of the wafer surface can be completed more accurately.

Description

Technical Field

[0001] The present application relates to the field of wafer inspection technology, and in particular to a method, device, and storage medium for aligning wafer defect data under dual inspection channels. Background Art

[0002] Research on third-generation semiconductor materials began in the 1990s. With the increasing demand for high performance, high efficiency, and high reliability in electronic devices, materials such as gallium nitride (GaN) and silicon carbide (SiC) have become a key research focus. These materials, due to their superior electrical and thermal properties, are particularly suitable for applications requiring high power, high frequency, and high temperature environments, such as electric vehicles, renewable energy systems, and 5G communications. During the manufacturing process of third-generation semiconductors, advances in crystal growth technology have continuously improved the quality of GaN and SiC, but this has also introduced various lattice defects such as dislocations, vacancies, and impurities. These defects can significantly impact device performance and reliability, making research in defect detection technology crucial. Defect detection for third-generation semiconductors primarily utilizes the following methods: 1. Dark-field detection: This utilizes scattering to detect defects such as particles; 2. Bright-field detection: This detects defects on the wafer surface; and 3. Photoluminescence detection: This is used to identify lattice defects. Because different defects emit light at different wavelengths, photoluminescence detection can be further categorized into near-ultraviolet photoluminescence (NUVPL) and visible light photoluminescence (VISPL).

[0003] When classifying defects, it is necessary to observe the imaging characteristics of defects on the wafer surface under different inspection channels and combine these imaging features for classification. However, for inspection channels constructed based on different physical mechanisms and hardware imaging systems, inevitable differences in hardware geometric configuration (such as camera pose and optical path) and imaging physics (such as defect response mechanism and depth sensitivity) lead to complex and difficult-to-model deviations (such as translation, rotation, scaling, and nonlinear distortion) in the spatial position of the same wafer defect and differences in feature expression in images from different inspection channels. These deviations make it extremely difficult to automatically, robustly, and accurately establish cross-channel defect correspondences, becoming a major bottleneck hindering the use of inspection data from different inspection channels to achieve high-precision and high-reliability defect classification. Summary of the Invention

[0004] In view of this, the present application provides a method, device and storage medium for aligning wafer defect data under dual detection channels to solve the problem that wafer defect data under multiple detection channels is difficult to accurately correspond.

[0005] In order to solve the above technical problems, a technical solution adopted in this application is: to provide a wafer defect data alignment method based on dual detection channels, which includes: respectively obtaining the defect masks of the wafer images under the two detection channels and taking the union to obtain a comprehensive mask; performing regional connectivity analysis on the comprehensive mask to obtain the connected domain and connected domain parameter information; based on the connected domain parameter information, respectively intercepting the corresponding defect areas in the defect masks under the two detection channels; and dividing the defects in the defect area corresponding to the same connected domain on the comprehensive mask into the same defect group.

[0006] As a further improvement of the present application, regional connectivity analysis is performed on the comprehensive mask to obtain connected domains and connected domain parameter information, including: binarizing the comprehensive mask to obtain a binary image; traversing each pixel of the binary image row by row, treating the area formed by adjacent pixels with the same pixel value as a connected domain, and recording the position, shape and size of the connected domain.

[0007] As a further improvement of the present application, corresponding defect areas are intercepted in the defect masks under the two detection channels based on the connected domain parameter information, including: defining the position and size of the region of interest corresponding to each connected domain based on the connected domain parameter information; intercepting the corresponding area in each defect mask according to the position and size of the region of interest, and obtaining the defect area corresponding to each connected domain on the defect mask under the two detection channels.

[0008] As a further improvement of the present application, defects within defective areas that exist and correspond to the same connected domain on the integrated mask are divided into the same defect group, including: pairing defective areas that correspond to the same connected domain and belong to different defect masks; confirming the channel category of the detection channel corresponding to the defect mask to which the two paired defective areas belong, the channel category including the main category and the secondary category; merging or splitting the defects corresponding to the two paired defective areas according to the channel category, performing an alignment operation, and then dividing them into the same defect group.

[0009] As a further improvement of the present application, the defects corresponding to the two paired defect areas are merged or split according to the channel category, and then an alignment operation is performed, and then they are divided into the same defect group, including: when the defect masks to which the two paired defect areas belong both correspond to the main category or both correspond to the secondary category, the defects corresponding to the two defect areas are merged respectively, and then an alignment operation is performed on the defects after the two defect areas are merged and divided into the same defect group; when the defect masks to which the two paired defect areas belong respectively correspond to the main category and the secondary category, according to the number and category of defects in the defect area corresponding to the main category, the defects in the defect area corresponding to the secondary category are merged or split, and then an alignment operation is performed with the defects in the defect area corresponding to the main category and divided into the same defect group.

[0010] As a further improvement of the present application, when all defects in a defect area are merged into one defect, the category of the defect is the category with the highest priority among all defects in the defect area; when all defects in a defect area are split according to the defects in another defect area, the category of the defect after splitting is the category of the defect in the defect area.

[0011] As a further improvement of the present application, defects within a defective area that exists and corresponds to the same connected domain on the integrated mask are divided into the same defect group, including: pairing defective areas that correspond to the same connected domain and belong to different defect masks; confirming the defects included in each of the two paired defective areas and the categories corresponding to the defects; confirming the target defective area corresponding to the defect with the highest priority; and merging or splitting the defects in another defective area according to the number and category of defects in the target defective area, and then aligning them with the defects in the target defective area and dividing them into the same defect group.

[0012] As a further improvement of the present application, according to the number and category of defects in the target defect area, the defects in the other defect area are merged or split, and then aligned with the defects in the target defect area and divided into the same defect group, including: when there is a single defect in the target defect area and multiple defects in the other defect area, the multiple defects in the other defect area are merged, and the category of the merged defect is recorded as the category with the highest priority among the multiple defects in the other defect area, and then the merged defect is aligned with the single defect in the target defect area and divided into the same defect group; when there are multiple defects in the target defect area and a single defect in the other defect area, the single defect in the other defect area is split according to the multiple defects in the target defect area, and the category of the split defect is recorded as the category of the single defect in the other defect area, and then the split defect is aligned with the multiple defects in the target defect area one by one and divided into the same defect group.

[0013] In order to solve the above technical problems, another technical solution adopted in this application is: to provide a wafer defect data alignment device based on dual detection channels, which includes: a mask generation module, which is used to obtain the defect masks of the wafer images under the two detection channels respectively and take the union to obtain a comprehensive mask; a connected domain analysis module, which is used to perform regional connectivity analysis on the comprehensive mask to obtain the connected domain and connected domain parameter information; a region capture module, which is used to capture the corresponding defect area in the defect masks under the two detection channels respectively based on the connected domain parameter information; a defect matching module, which is used to divide the defects in the defect area corresponding to the same connected domain on the comprehensive mask into the same defect group.

[0014] In order to solve the above technical problems, another technical solution adopted in this application is: to provide a computer device, which includes a processor and a memory coupled to the processor, wherein program instructions are stored in the memory, and when the program instructions are executed by the processor, the processor executes the steps of the wafer defect data alignment method under dual detection channels as described in any of the above items.

[0015] In order to solve the above technical problems, another technical solution adopted in the present application is: providing a storage medium storing program instructions for the wafer defect data alignment method under dual detection channels that can implement any of the above items.

[0016] The beneficial effect of the present application is that the wafer defect data alignment method under dual detection channels of the present application obtains a comprehensive mask by taking the union of the defect masks of the wafer images under two different detection channels, thereby ensuring the integrity of the defect data in the comprehensive mask, and then performing a connected domain analysis on the comprehensive mask, and based on the connected domain under the comprehensive mask, intercepting the corresponding defect area in the defect mask under each detection channel, and then corresponding the defects in the defect area of different defect masks corresponding to the same connected domain, thereby aligning the defect data of the same defect under different detection channels, which fundamentally solves the core problem that the defect space coordinates are difficult to accurately match due to differences in hardware configurations of different detection channels and differences in imaging physical principles, effectively accommodates the differences in defect visibility and expression forms under different channels, ensures the complete and accurate grouping of data of the same physical defect under different detection channels, and provides support for the subsequent high-precision and high-reliability automatic classification of wafer defects. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 1 is a flow chart of a method for aligning wafer defect data under dual detection channels according to an embodiment of the present invention; Figure 2 1 is a schematic diagram of the functional modules of a wafer defect data alignment device under dual detection channels according to an embodiment of the present invention; Figure 3 is a schematic structural diagram of a computer device according to an embodiment of the present invention; Figure 4 It is a schematic structural diagram of a storage medium according to an embodiment of the present invention. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0019] The terms "first," "second," and "third" in this application are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features identified. Therefore, features identified as "first," "second," or "third" may explicitly or implicitly include at least one of such features. In the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined. All directional designations in the embodiments of this application (such as up, down, left, right, front, back, etc.) are intended only to illustrate the relative positional relationships and movement of components in a specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional designations will also change accordingly. Furthermore, the terms "including," "having," and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus comprising a series of steps or elements is not limited to the listed steps or elements but may optionally include steps or elements not listed, or may optionally include other steps or elements inherent to such process, method, product, or apparatus.

[0020] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0021] Figure 1 FIG is a flow chart of a method for aligning wafer defect data under dual detection channels according to an embodiment of the present invention. It should be noted that if substantially the same results are achieved, the method of the present invention is not limited to the two methods. Figure 1 The process sequence shown is limited. Figure 1 As shown, the wafer defect data alignment method under dual detection channels includes the following steps: Step S1: respectively obtain defect masks of wafer images under two inspection channels and take the union of them to obtain a comprehensive mask.

[0022] It should be noted that in this embodiment, the detection channels include, but are not limited to, dark field detection channels, bright field detection channels, near-ultraviolet photoluminescence detection channels, and visible photoluminescence detection channels. Each detection channel may utilize different light sources, filters, and imaging parameters, resulting in different detected defect types and locations.

[0023] Specifically, after acquiring wafer images from both inspection channels, the images are binarized to generate defect masks for both inspection channels. Pixels in defective areas are marked as 1 (white), and pixels in background areas are marked as 0 (black). The defect masks corresponding to the two inspection channels are then logically ORed together to generate a combined mask that contains all defect data found across all inspection channels, ensuring data integrity.

[0024] Step S2: Perform regional connectivity analysis on the comprehensive mask to obtain connected domains and connected domain parameter information.

[0025] It should be noted that a connected domain usually refers to an area in an image consisting of adjacent pixels. For example, in a binary image, if two white pixels are adjacent (upper, lower, left, right, or diagonal), they belong to the same connected domain.

[0026] Specifically, after obtaining the integrated mask, the pixel value of each pixel in the integrated mask is analyzed, and pixels with the same pixel value are connected to form a connected domain. It can be understood that this connected domain is the area consisting of defects. After obtaining the connected domain, parameter information of the connected domain is extracted. In this embodiment, the connected domain parameter information includes the position, shape, and size of the connected domain.

[0027] Furthermore, step S2 specifically includes: 1. Binarize the comprehensive mask to obtain a binary image.

[0028] 2. Traverse each pixel of the binary image row by row, regard the area formed by adjacent pixels with the same pixel value as a connected domain, and record the position, shape and size of the connected domain.

[0029] It should be noted that "adjacent" in a connected domain can be defined according to different rules, the most common of which are 4-connected and 8-connected. 4-connected only considers adjacent pixels in the four directions of up, down, left, and right, while 8-connected also includes four adjacent pixels in the diagonal direction. Obviously, 8-connected can more comprehensively capture complex shape structures, especially when defects may have irregular shapes. Therefore, in this embodiment, the 8-connected rule is used to mark all connected domains. Specifically, in the comprehensive mask, the 8-connected rule is defined as follows: Adjacent pixels: The eight neighborhoods of a pixel (up, down, left, right, and four diagonal directions) are all considered adjacent; Connected region: All pixels connected by adjacent paths form the same region.

[0030] Among them, the position of the connected domain can be expressed by the center position of the connected domain or the coordinates of the upper left corner of the circumscribed rectangle of the connected domain, the shape of the connected domain can be expressed by the circumscribed rectangle or circumscribed polygon of the connected domain, and the size of the connected domain can be expressed by the area of the circumscribed rectangle or circumscribed polygon of the connected domain.

[0031] Step S3: based on the connected domain parameter information, corresponding defect areas are intercepted from the defect masks under the two detection channels respectively.

[0032] Specifically, after obtaining the connected domain parameter information, the corresponding defect area is intercepted according to the position of the connected domain in the defect mask under the two inspection channels based on the shape and size of the connected domain. By traversing each connected domain, the corresponding defect area in the defect mask under the two inspection channels is obtained.

[0033] Furthermore, step S3 specifically includes: 1. Define the position and size of the region of interest corresponding to each connected domain based on the connected domain parameter information.

[0034] Specifically, in this embodiment, the defect area is captured based on a region of interest (ROI). The size of the ROI is set based on the shape and size of the connected domain. For example, the size of the ROI is set based on the circumscribed rectangle of the connected domain. The position of the ROI is determined based on the position of the connected domain, and each connected domain corresponds to its own ROI.

[0035] 2. According to the position and size of the region of interest, the corresponding area is intercepted on each defect mask to obtain the defect area corresponding to each connected domain on the defect mask under the two detection channels.

[0036] Specifically, after setting a corresponding region of interest for each connected domain, the corresponding defect regions are respectively intercepted in the defect masks under the two detection channels using the region of interest.

[0037] Step S4: Defects within the defect area corresponding to the same connected domain on the integrated mask are divided into the same defect group.

[0038] Specifically, after obtaining the defect areas of the defect masks under the two detection channels, the defect areas corresponding to the same connected domain on the integrated mask in different defect masks are divided into the same type of defect areas, and the defects in the same type of defect areas are aligned and divided into the same defect group, thereby completing the defect category classification of the defects detected under the dual detection channels.

[0039] Furthermore, it should be noted that for wafer defect detection, the degree of dependence on different detection channels varies depending on the detection requirements. Therefore, the detection results under the dual detection channels need to be divided into primary and secondary categories. Therefore, in some embodiments, step S4 specifically includes: 1. Pair the defect regions that correspond to the same connected domain and belong to different defect masks.

[0040] Specifically, after all defect regions of the defect masks under the two detection channels are obtained, the defect regions in the two defect masks corresponding to the same connected domain under the comprehensive mask are paired to obtain at least one pair of defect regions.

[0041] 2. Confirm the channel category of the detection channel corresponding to the defect mask to which the two paired defect areas belong. The channel category includes a primary category and a secondary category.

[0042] It should be noted that the category of each detection channel is pre-set, including the main category and the secondary category.

[0043] 3. Merge or split the defects corresponding to the two paired defect areas according to the channel category, perform alignment operations, and then classify them into the same defect group.

[0044] Specifically, when aligning defects within two defect areas, this embodiment takes the detection channel of the main category as the main focus, merges or splits the defects corresponding to the detection channel of the secondary category according to the defects corresponding to the main category, and then aligns the merged or split defects with the defects corresponding to the main category and divides them into the same defect group.

[0045] Furthermore, the defects corresponding to the two paired defect areas are merged or split according to the channel category, and then aligned, and then classified into the same defect group, which specifically includes: 3.1. When the defect masks of the two paired defect regions both correspond to the primary category or the secondary category, the defects corresponding to the two defect regions are merged respectively, and then the defects of the two defect regions after merging are aligned and classified into the same defect group.

[0046] Specifically, the two paired defect areas correspond to the first detection channel and the second detection channel respectively. When the first detection channel and the second detection channel are both primary categories or both secondary categories, assuming that one of the defect areas includes one defect, recorded as Defect A, and the other defect area includes three defects, recorded as Defect b1, Defect b2, and Defect b3 respectively. When the detection channels corresponding to the two defect areas are both primary categories or both secondary categories, the three defects Defect b1, Defect b2, and Defect b3 in the other defect area need to be merged into one defect, recorded as Defect B, and then Defect A and Defect B are aligned, and Defect A and Defect B are divided into the same defect group.

[0047] 3.2. When the defect masks of the two paired defect regions correspond to the primary category and the secondary category respectively, the defects in the defect region corresponding to the secondary category are merged or split according to the number and category of defects in the defect region corresponding to the primary category, and then aligned with the defects in the defect region corresponding to the primary category and classified into the same defect group.

[0048] Specifically, the situations in which the defect masks of the two paired defect areas correspond to the main category and the secondary category respectively can be divided into: 1. The defect area corresponding to the main category includes one defect, and the defect area corresponding to the secondary category includes multiple defects; 2. The defect area corresponding to the main category includes multiple defects, and the defect area corresponding to the secondary category includes one defect; 3. The defect area corresponding to the main category and the defect area corresponding to the secondary category both include one defect; 4. The defect area corresponding to the main category and the defect area corresponding to the secondary category both include multiple defects.

[0049] For the first case, multiple defects corresponding to the defect area of the secondary category are merged into one defect, and then the defect is aligned with the defects corresponding to the defect area of the primary category and classified into the same defect group.

[0050] For the second case, a defect in the defect area corresponding to the secondary category is split according to multiple defects in the defect area corresponding to the primary category, and then the multiple defects obtained by the split are aligned with the multiple defects in the defect area corresponding to the primary category and divided into the same defect group.

[0051] For the third case, the defects corresponding to the defect area of the secondary category are aligned with the defects corresponding to the defect area of the primary category and are divided into the same defect group.

[0052] For the fourth case, first merge the multiple defects corresponding to the defect area of the secondary category into one defect, then split the merged defect into multiple defects corresponding to the defect area of the main category, and then align the multiple defects obtained by re-split with the multiple defects corresponding to the defect area of the main category and divide them into the same defect group.

[0053] It should be noted that in the above-mentioned process of merging or splitting defects, when all defects in a defect area are merged into one defect, the category of the defect is the category with the highest priority among all defects in the defect area; when all defects in a defect area are split according to the defects in another defect area, the category of the defects after the split is the category of the defects in the defect area before the split.

[0054] Among them, when performing defect splitting, when all defects in the defect area are split according to the defects in another defect area, the category of the defects after splitting is the category of the defects in the defect area before splitting, and the defect category of the remaining unmatched area is marked as a general defect of the defect area.

[0055] Furthermore, in some other embodiments, defects may be split or merged according to their priorities. Step S4 specifically includes: 1. Pair the defect regions that correspond to the same connected domain and belong to different defect masks.

[0056] 2. Confirm the defects included in the two paired defect areas and the corresponding categories of the defects.

[0057] 3. Confirm the target defect area corresponding to the defect with the highest priority.

[0058] 4. Based on the number and type of defects in the target defect area, the defects in another defect area are merged or split, and then aligned with the defects in the target defect area and divided into the same defect group.

[0059] Specifically, when aligning the defects in two defect areas, the category corresponding to each defect in each defect area is obtained. It should be noted that the priorities of different defect categories are pre-set, for example, the priority of scratch defects > the priority of particle defects > the priority of other defects. For example, when there is one defect in one defect area and it is a scratch defect with the highest priority, and there are three defects in the other defect area and their priorities are all lower than the scratch defect, the three defects in the other defect area need to be merged into one defect, and the category of the merged defect is set to the category with the highest priority among the three defects. When there is a low-priority defect in the defect area of one detection channel and three defects in the defect area of another detection channel, and one of the three defects has a priority higher than the low-priority defect, the low-priority defect in the defect area of one detection channel is split according to the three defects in the defect area of the other detection channel, and the categories of the three defects obtained by the split are set to the category of the low-priority defect.

[0060] The wafer defect data alignment method under dual detection channels of the present application obtains a comprehensive mask by taking the union of the defect masks of the wafer images under two different detection channels, thereby ensuring the integrity of the defect data in the comprehensive mask, and then performing a connected domain analysis on the comprehensive mask, and based on the connected domain under the comprehensive mask, intercepting the corresponding defect area in the defect mask under each detection channel, and then matching the defects in the defect areas of different defect masks corresponding to the same connected domain, thereby aligning the defect data of the same defect under different detection channels. It fundamentally solves the core problem that the defect space coordinates are difficult to accurately match due to differences in hardware configurations of different detection channels and differences in imaging physical principles, effectively accommodates the differences in defect visibility and expression forms under different channels, ensures the complete and accurate grouping of data of the same physical defect under different detection channels, and provides support for the subsequent high-precision and high-reliability automatic classification of wafer defects.

[0061] Figure 2 Schematic diagram of the functional modules of the wafer defect data alignment device under dual detection channels according to an embodiment of the present invention. Figure 2 As shown, the wafer defect data alignment device 20 under dual detection channels includes: a mask generation module 21, a connected domain analysis module 22, a region interception module 23 and a defect matching module 24.

[0062] The mask generation module 21 is used to obtain defect masks of wafer images under two inspection channels respectively and take the union of them to obtain a comprehensive mask; Connected domain analysis module 22, used to perform regional connectivity analysis on the comprehensive mask to obtain connected domains and connected domain parameter information; The region interception module 23 is used to intercept the corresponding defect region in the defect mask under the two detection channels based on the connected domain parameter information; The defect matching module 24 is configured to classify defects within a defect region that has defects and corresponds to the same connected domain on the defect mask into the same defect group.

[0063] Optionally, the connected domain analysis module 22 performs regional connectivity analysis on the comprehensive mask to obtain the connected domain and connected domain parameter information, specifically including: binarizing the comprehensive mask to obtain a binary image; traversing each pixel of the binary image row by row, treating the area formed by adjacent pixels with the same pixel value as a connected domain, and recording the position, shape and size of the connected domain.

[0064] Optionally, the region capture module 23 performs an operation of capturing corresponding defect regions in the defect masks under the two detection channels based on the connected domain parameter information, specifically including: defining the position and size of the region of interest corresponding to each connected domain based on the connected domain parameter information; capturing the corresponding region on each defect mask according to the position and size of the region of interest, and obtaining the defect region corresponding to each connected domain on the defect mask under the two detection channels.

[0065] Optionally, the defect matching module 24 performs an operation of dividing defects within a defect area that has defects and corresponds to the same connected domain on the defect mask into the same defect group, which may include: pairing defect areas that correspond to the same connected domain and belong to different defect masks; confirming the channel category of the detection channel corresponding to the defect mask to which the two paired defect areas belong, the channel category including the main category and the secondary category; merging or splitting the defects corresponding to the two paired defect areas according to the channel category, performing an alignment operation, and then dividing them into the same defect group.

[0066] Optionally, the defect matching module 24 performs an alignment operation after merging or splitting the defects corresponding to the two paired defect areas according to the channel category, and then divides them into the same defect group, specifically including: when the defect masks to which the two paired defect areas belong both correspond to the main category or both correspond to the secondary category, the defects corresponding to the two defect areas are merged respectively, and then the alignment operation is performed on the defects after the two defect areas are merged and divided into the same defect group; when the defect masks to which the two paired defect areas belong respectively correspond to the main category and the secondary category, according to the number and category of defects in the defect area corresponding to the main category, the defects in the defect area corresponding to the secondary category are merged or split, and then aligned with the defects in the defect area corresponding to the main category and divided into the same defect group.

[0067] Optionally, when all defects in a defect area are merged into one defect, the category of the defect is the category with the highest priority among all defects in the defect area; when all defects in a defect area are split according to defects in another defect area, the category of the defect after splitting is the category of the defect in the defect area before splitting.

[0068] Optionally, the defect matching module 24 performs an operation of dividing defects in a defect area that has defects and corresponds to the same connected domain on the defect mask into the same defect group, and may also include: pairing defect areas that correspond to the same connected domain and belong to different defect masks; confirming the defects included in each of the two paired defect areas and the categories corresponding to the defects; confirming the target defect area corresponding to the defect with the highest priority; and merging or splitting the defects in another defect area according to the number and category of defects in the target defect area, and then aligning them with the defects in the target defect area and dividing them into the same defect group.

[0069] Optionally, the defect matching module 24 performs an operation of merging or splitting the defects in the other defect area according to the number and category of defects in the target defect area, and then aligning them with the defects in the target defect area and dividing them into the same defect group, specifically including: when there is a single defect in the target defect area and multiple defects in the other defect area, merging the multiple defects in the other defect area, and recording the category of the merged defect as the category with the highest priority among the multiple defects in the other defect area, and then aligning the merged defect with the single defect in the target defect area and dividing them into the same defect group; when there are multiple defects in the target defect area and a single defect in the other defect area, splitting the single defect in the other defect area according to the multiple defects in the target defect area, and recording the category of the split defect as the category of the single defect in the other defect area, and then aligning the split defect with the multiple defects in the target defect area one by one and dividing them into the same defect group.

[0070] For other details about the technical solutions for implementing each module in the device for aligning wafer defect data under dual detection channels in the above embodiment, please refer to the description of the method for aligning wafer defect data under dual detection channels in the above embodiment, which will not be repeated here.

[0071] It should be noted that the various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. Similarities between the various embodiments can be referred to in conjunction with each other. For device embodiments, since they are generally similar to method embodiments, their description is relatively simple, and for relevant details, reference can be made to the description of the method embodiments.

[0072] See also Figure 3 , Figure 3 FIG. 1 is a schematic diagram of the structure of a computer device according to an embodiment of the present invention. Figure 3 As shown, the computer device 30 includes a processor 31 and a memory 32 coupled to the processor 31. The memory 32 stores program instructions. When the program instructions are executed by the processor 31, the processor 31 executes the steps of the wafer defect data alignment method under the dual detection channels described in any of the above embodiments.

[0073] The processor 31 may also be referred to as a central processing unit (CPU). The processor 31 may be an integrated circuit chip with signal processing capabilities. The processor 31 may also be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic device, a discrete gate or transistor logic device, or a discrete hardware component. The general-purpose processor may be a microprocessor or any conventional processor.

[0074] See Figure 4 , Figure 4 The figure is a schematic diagram of the structure of the storage medium of an embodiment of the present invention. The storage medium of the embodiment of the present invention stores program instructions 41 that can implement the above-mentioned wafer defect data alignment method under dual detection channels, wherein the program instructions 41 can be stored in the above-mentioned storage medium in the form of a software product, including a number of instructions for causing a computer device (which can be a personal computer, server, or network device, etc.) or a processor to execute all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: various media that can store program code, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, or a computer device such as a computer, server, mobile phone, or tablet.

[0075] In the several embodiments provided in this application, it should be understood that the disclosed computer devices, apparatuses and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the division of units is merely a logical function division. In actual implementation, there may be other division methods, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interface, device or unit, which can be electrical, mechanical or other forms.

[0076] In addition, the functional units in the various embodiments of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated units may be implemented in the form of hardware or in the form of software functional units. The above is only an implementation method of the present application and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of this application, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A wafer defect data alignment method under dual detection channels, characterized in that: It includes: Obtain the defect masks of the wafer images under the two inspection channels respectively and take the union to obtain a comprehensive mask; Performing regional connectivity analysis on the comprehensive mask to obtain connected domains and connected domain parameter information; Based on the connected domain parameter information, corresponding defect areas are respectively intercepted from the defect masks under the two detection channels; Defects within a defective region that have defects and correspond to the same connected domain on the integrated mask are divided into the same defect group.

2. The wafer defect data alignment method under dual detection channels according to claim 1, characterized in that: The performing of regional connectivity analysis on the comprehensive mask to obtain connected domains and connected domain parameter information includes: performing binarization processing on the comprehensive mask to obtain a binarized image; Each pixel of the binary image is traversed row by row, an area formed by adjacent pixels with the same pixel value is regarded as a connected domain, and the position, shape and size of the connected domain are recorded.

3. The wafer defect data alignment method under dual detection channels according to claim 1, characterized in that: The method of intercepting corresponding defect areas in the defect masks under two detection channels based on the connected domain parameter information includes: defining the position and size of the region of interest corresponding to each connected domain based on the connected domain parameter information; According to the position and size of the region of interest, corresponding regions are intercepted on each defect mask to obtain the defect regions corresponding to each connected domain on the defect mask under the two detection channels.

4. The wafer defect data alignment method under dual detection channels according to claim 1, characterized in that: The step of dividing the defects in the defect region corresponding to the same connected domain on the integrated mask into the same defect group includes: Pairing defect regions that correspond to the same connected domain and belong to different defect masks; Determining the channel categories of the detection channels corresponding to the defect masks to which the two paired defect regions belong, wherein the channel categories include a primary category and a secondary category; According to the channel category, the defects corresponding to the two paired defect areas are merged or split, and then an alignment operation is performed, and then they are divided into the same defect group.

5. The wafer defect data alignment method under dual detection channels according to claim 4, characterized in that: The steps of merging or splitting the defects corresponding to the two paired defect areas according to the channel category and then performing an alignment operation and then classifying them into the same defect group include: When the defect masks of the two paired defect regions both correspond to the primary category or the secondary category, the defects corresponding to the two defect regions are merged respectively, and then the defects after the merging of the two defect regions are aligned and classified into the same defect group; When the defect masks of the two paired defect areas correspond to the main category and the secondary category respectively, the defects in the defect area corresponding to the secondary category are merged or split according to the number and category of defects in the defect area corresponding to the main category, and then aligned with the defects in the defect area corresponding to the main category and divided into the same defect group.

6. The wafer defect data alignment method under dual detection channels according to claim 5, characterized in that: When all defects in a defect area are merged into one defect, the category of the defect is the category with the highest priority among all defects in the defect area; when all defects in a defect area are split according to the defects in another defect area, the category of the defects after splitting is the category of the defects in the defect area before splitting.

7. The wafer defect data alignment method under dual detection channels according to claim 1, characterized in that: The step of dividing the defects in the defect region corresponding to the same connected domain on the integrated mask into the same defect group includes: Pairing defect regions that correspond to the same connected domain and belong to different defect masks; Confirm the defects included in the two paired defect areas and the corresponding categories of the defects; Confirm the target defect area corresponding to the defect with the highest priority; According to the number and types of defects in the target defect area, the defects in another defect area are merged or split, and then aligned with the defects in the target defect area and divided into the same defect group.

8. The wafer defect data alignment method under dual detection channels according to claim 7, characterized in that: The method of merging or splitting defects in another defect area according to the number and type of defects in the target defect area, and then aligning the defects with the defects in the target defect area and classifying them into the same defect group includes: When a single defect exists in the target defect area and multiple defects exist in another defect area, the multiple defects in the other defect area are merged, and the category of the merged defect is recorded as the category with the highest priority among the multiple defects in the other defect area. The merged defect is then aligned with the single defect in the target defect area and classified into the same defect group; When there are multiple defects in the target defect area and a single defect in another defect area, the single defect in the other defect area is split according to the multiple defects in the target defect area, and the category of the split defects is recorded as the category of the single defect in the other defect area. The split defects are then aligned with the multiple defects in the target defect area one by one and divided into the same defect group.

9. A computer device, characterized in that: The computer device includes a processor and a memory coupled to the processor, wherein program instructions are stored in the memory. When the program instructions are executed by the processor, the processor performs the steps of the wafer defect data alignment method under dual detection channels as described in any one of claims 1 to 8.

10. A storage medium, characterized in that: Program instructions are stored that can implement the wafer defect data alignment method under dual detection channels as described in any one of claims 1-8.

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