K-band RF front-end transceiver processing module
By adopting the design of vertical connecting branch channels and wave-absorbing grooves in the K-band RF front-end transceiver processing module, the self-excitation problem of multi-stage amplifiers is solved, the balance between gain improvement and space utilization is achieved, and the occurrence of self-excitation is prevented.
Patent Information
- Application Number
- CN202510953944.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-11
- Publication Date
- 2025-10-03
- Estimated Expiration
- 2045-07-11
AI Technical Summary
In the K-band RF front-end transceiver processing module, self-excitation is prone to occur when multiple amplifiers are cascaded, especially at low temperatures. Existing technologies are difficult to effectively avoid self-excitation, and there is insufficient space in the module's miniaturized design, making it impossible to achieve effective isolation.
The amplifiers are arranged in mutually vertically connected branch channels, and absorbing grooves are opened on the outer walls of the branch channels of each stage of the amplifier. Absorbing materials are used to absorb spatial radiation signals to form an isolation effect and reduce the risk of self-excitation.
It effectively improves the isolation between amplifiers and prevents the occurrence of self-excitation. At the same time, it achieves gain improvement in a compact space and avoids signal leakage and self-excitation.
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Figure CN120454753B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of millimeter wave devices, and in particular to a K-band radio frequency front-end transceiver processing module. Background Art
[0002] The K-band RF front-end transceiver processing module primarily implements the time-sharing, frequency conversion, and intermediate frequency (IF) signal generation and processing of K-band signals. Since the signal power needs to be increased when it is converted from the RF front-end to the IF, the transceiver assembly typically incorporates a multi-stage amplifier to amplify the signal. However, when these amplifiers are cascaded, the link gain is too high, making self-excitation a common problem. One of the causes of self-excitation is that after the signal is amplified, it has a strong coupling capability. If the amplifier's port matching is not ideal, signal reflections will occur. These signals will naturally pass through the air medium and feed back to the front-end amplifier, where they are repeatedly amplified and self-excitation occurs.
[0003] The existing method to avoid self-excitation is to isolate each amplifier stage or attach absorbing materials to the cavity to absorb the signal coupled into the air. However, since amplifiers are generally connected in series and the internal transceiver components are compactly distributed, it is impossible to isolate each amplifier stage individually. The spatial coupling suppression effect is relatively poor. The signal forms a closed loop with the transmission line through spatial coupling, and the local loop gain is greater than 0, which easily leads to self-excitation, especially at low temperatures. Summary of the Invention
[0004] The purpose of the present invention is to provide a K-band RF front-end transceiver processing module. By setting branch channels that are vertically connected to each other, the cavity in which the amplifier is placed is spatially isolated. Even if more amplifiers are used in the circuit, the isolation between the amplifiers can be well achieved, thereby improving the gain while avoiding the occurrence of self-excitation.
[0005] To achieve the above-mentioned objectives, the present application provides a K-band RF front-end transceiver processing module, including a main cavity arranged in a shell, and a plurality of signal transceiver transmission link channels are arranged in the main cavity. Each signal transceiver transmission link channel includes a connected RF receiving channel with an RF receiving microwave circuit and an RF transmitting channel with an RF transmitting microwave circuit. The RF receiving channel includes a plurality of interconnected branch channels, and the two connected branch channels are vertically connected to each other. The RF receiving microwave circuit includes a multi-stage amplifier connected in series, and an amplifier is placed on each branch channel.
[0006] In some specific embodiments, on each branch channel where an amplifier is placed, an absorbing groove for placing absorbing material is opened on the outer wall of the branch channel between the branch channel and the shell, and the length of the absorbing groove is greater than the length of the branch channel occupied by the amplifier.
[0007] In some specific embodiments, the radio frequency receiving channel includes a first branch channel, a second branch channel, a third branch channel, a fourth branch channel, and a fifth branch channel that are interconnected vertically and serpentine-shaped, wherein the first branch channel and the second branch channel are interconnected vertically, the second branch channel and the third branch channel are interconnected vertically, the third branch channel and the fourth branch channel are interconnected vertically, the fourth branch channel and the fifth branch channel are interconnected vertically, the first branch channel, the third branch channel, and the fifth branch channel are parallel, and the second branch channel and the fourth branch channel are parallel. This saves space.
[0008] In some specific embodiments, the lengths of the branch channels are ordered as follows: first branch channel > second branch channel > third branch channel > fifth branch channel > fourth branch channel.
[0009] In some specific embodiments, the multi-stage amplifier includes a first amplifier, a second amplifier, a third amplifier, and a fourth amplifier connected in series in sequence, a digitally controlled attenuator is connected in series between the second amplifier and the third amplifier, the first amplifier is placed in the middle of the first branch channel, the second amplifier is placed in the middle of the second branch channel, the third amplifier is placed on the third branch channel close to the fourth branch channel, and the fourth amplifier is placed on the fifth branch channel close to the fourth branch channel.
[0010] In some specific embodiments, wave absorbing grooves for placing wave absorbing materials are provided on the opposite outer walls of the third branch channel and the fifth branch channel, and the positions of the two wave absorbing grooves correspond to the positions of the third amplifier and the fourth amplifier, respectively.
[0011] In some specific implementation schemes, the RF receiving channel and the RF transmitting channel in each signal transceiver transmission link channel share a RF port, and the RF receiving microwave circuit board and the RF transmitting microwave circuit board switch the transmission channel through a switch.
[0012] In some specific embodiments, each signal transceiver transmission link channel also includes an intermediate frequency receiving channel equipped with an intermediate frequency receiving microwave circuit and an intermediate frequency transmitting channel equipped with an intermediate frequency transmitting microwave circuit, and the intermediate frequency receiving channel is connected to the intermediate frequency receiving port, and the intermediate frequency transmitting channel is connected to the intermediate frequency transmitting port.
[0013] In some specific embodiments, on the branch channel where the amplifier is placed, a power input port for supplying power to the amplifier is installed on the other outer side wall of the branch channel opposite to the one where the wave absorbing groove is opened.
[0014] The inventive concept of the present invention is:
[0015] In the K-band RF front-end transceiver processing module, the input signal from the RF front-end generally needs to undergo multi-stage amplification at the RF front-end before being input into the intermediate frequency part for frequency conversion to an intermediate frequency signal output. If the link gain is too high, self-excitation is likely to occur between the multi-stage amplifiers. If you want to increase the gain of the entire link and reduce the impact of self-excitation, on the one hand, you can reasonably distribute the gain. For example, design the RF front-end to have a high gain (for example, 100dB) and design the intermediate frequency part to have a lower gain (such as 40dB). At this time, self-excitation is still likely to occur between the multi-stage amplifiers of the RF front-end. The generally adopted method is to reduce self-excitation by adding a shielding cover or placing absorbing materials. However, with the development of module miniaturization design, the internal distribution of the device is compact. When there are a large number of amplifiers, if a shielding frame or shielding cover is set for each amplifier, if miniaturization is to be achieved, the internal space of the device is insufficient. If all are installed, the overall size of the device will be larger.
[0016] Therefore, in order to improve the gain and increase the use of amplifiers, and to avoid self-excitation after the added amplifiers are cascaded, the present application uses mutually perpendicular branch channels, and arranges the amplifiers in each branch channel respectively. The branch channels are connected to each other vertically to form a bent channel. The amplifiers are placed in each channel and can be isolated from each other through the bending setting. The use of bent transmission channels for isolation can effectively reduce the intensity of the spatial radiation signal. In addition, grooves are cut on the outer wall of the channel of each stage of the amplifier and absorbing materials are affixed in advance to further reduce spatial radiation; increase isolation, prevent self-excitation, and prevent the signal of the subsequent amplifier from leaking to the input amplifier through spatial radiation. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Figure 1 A schematic diagram of the internal distribution of the cavity of the K-band RF front-end transceiver processing module provided in an embodiment of the present invention;
[0018] Figure 2 This is a schematic diagram of the circuit layout of the RF receiving channel provided by an embodiment of the present invention.
[0019] Description of reference numerals:
[0020] 1-Main cavity, 2-Shell, 3-Signal transceiver transmission link channel, 4-RF receiving channel, 41-First branch channel, 42-Second branch channel, 43-Third branch channel, 44-Fourth branch channel, 45-Fifth branch channel, 5-RF transmitting channel, 61-First amplifier, 62-Second amplifier, 63-Third amplifier, 64-Fourth amplifier, 7-Absorbing groove, 8-RF port, 9-IF receiving port, 10-IF transmitting port, 11-Feed insulator, 12-CNC attenuator. DETAILED DESCRIPTION
[0021] The following will be combined with the accompanying drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is in no way intended to limit the present invention and its application or use. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.
[0022] Unless otherwise specifically stated, the relative arrangement of components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention.
[0023] At the same time, it should be understood that for the convenience of description, the sizes of the various parts shown in the drawings are not drawn according to the actual proportional relationship.
[0024] Additionally, descriptions of well-known structures, functions, and configurations may be omitted for clarity and conciseness. Those skilled in the art will recognize that various changes and modifications can be made to the examples described herein without departing from the spirit and scope of the present disclosure.
[0025] Technologies, methods and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, such technologies, methods and equipment should be considered part of the authorization specification.
[0026] In all examples shown and discussed herein, any specific values should be interpreted as merely exemplary and not limiting. Therefore, other examples of the exemplary embodiments may have different values.
[0027] Example 1
[0028] like Figure 1 As shown, since the transceiver component actually includes more circuit devices and structures, since it is not the focus of this application, this application will not be shown in detail in the figure. This application only shows the layout of the amplifier and the channel connection relationship. Specifically, this embodiment provides a K-band RF front-end transceiver processing module, including a main cavity 1 arranged in a shell 2, and a plurality of signal transceiver transmission link channels 3 are provided in the main cavity 1. Each signal transceiver transmission link channel 3 includes a connected RF receiving channel 4 with a RF receiving microwave circuit and a RF transmitting channel 5 with a RF transmitting microwave circuit. The RF receiving channel 4 includes a plurality of branch channels that are interconnected, and the two connected branch channels are vertically connected to each other. The RF receiving microwave circuit includes a multi-stage amplifier connected in series, and an amplifier is placed on each branch channel.
[0029] This embodiment uses the example of four signal transceiver transmission link channels 3 provided in the main cavity 1. These four signal transceiver transmission link channels 3 independently perform signal reception and transmission functions, switching between reception and transmission via a switch. The RF receive channel 4 and RF transmit channel 5 in each signal transceiver transmission link channel 3 share a single RF port 8, and the RF receive microwave circuit and the RF transmit microwave circuit switch transmission channels via a switch. Each signal transceiver transmission link channel 3 also includes an intermediate frequency receive channel equipped with an intermediate frequency receive microwave circuit and an intermediate frequency transmit channel equipped with an intermediate frequency transmit microwave circuit. The intermediate frequency receive channel is connected to the intermediate frequency receive port 9, and the intermediate frequency transmit channel is connected to the intermediate frequency transmit port 10. In the schematic diagram of the receiving link circuit of the K-band RF front-end transceiver processing module of the present application, the RF receiving microwave circuit includes a first switch connected to the RF input port RFin. When the RF receiving circuit is currently working, the first switch switches to this path. The first switch connects the first amplifier 61, the second amplifier 62, the digitally controlled attenuator 12, the third amplifier 63 and the fourth amplifier 64 in series in sequence. The fourth amplifier 64 is switched to the receiving end by connecting to the second switch. The signal amplified by the fourth amplifier 64 is filtered and mixed with the local oscillator signal to obtain an intermediate frequency signal. The intermediate frequency signal is switched to the intermediate frequency transmitting microwave circuit through the third switch, and the intermediate frequency signal is transmitted through the intermediate frequency transmitting microwave circuit.
[0030] It is understandable that the circuit devices such as the RF receiving microwave circuit, RF transmitting microwave circuit, intermediate frequency receiving microwave circuit and intermediate frequency transmitting microwave circuit mentioned in this application are all arranged on a microwave circuit board, and then the microwave board is placed in the channel in the cavity. The microwave circuit board can adopt the RT5880 type microwave board. Heat dissipation design is also carried out in this application. The K-band RF front-end transceiver processing module adopts natural heat dissipation. The heat dissipation body is composed of a shell 2, a cover plate and other parts. The shell 2 is made of rust-proof aluminum material and is milled as a whole. The power device is directly mounted on the structural shell 2 for heat dissipation, and other devices are fixed on the shell 2 through a PCB board and an aluminum substrate for heat dissipation. The outer surface of the shell 2 can be coated with black matte paint to improve the heat dissipation efficiency.
[0031] like Figure 2As shown, the RF receiving channel 4 includes a first branch channel 41, a second branch channel 42, a third branch channel 43, a fourth branch channel 44, and a fifth branch channel 45, which are connected to each other vertically and form a serpentine shape. The first branch channel 41 and the second branch channel 42 are connected to each other vertically, the second branch channel 42 and the third branch channel 43 are connected to each other vertically, the third branch channel 43 and the fourth branch channel 44 are connected to each other vertically, and the fourth branch channel 44 and the fifth branch channel 45 are connected to each other vertically. The first branch channel 41, the third branch channel 43, and the fifth branch channel 45 are parallel, and the second branch channel 42 and the fourth branch channel 44 are parallel. The lengths of the branch channels are arranged in the following order: first branch channel 41 > second branch channel 42 > third branch channel 43 > fifth branch channel 45 > fourth branch channel 44. The multi-stage amplifier includes a first amplifier 61, a second amplifier 62, a third amplifier 63 and a fourth amplifier 64 connected in series in sequence, and a digitally controlled attenuator 12 is connected in series between the second amplifier 62 and the third amplifier 63. The first amplifier 61 is placed in the middle of the first branch channel 41, the second amplifier 62 is placed in the middle of the second branch channel 42, the third amplifier 63 is placed on the third branch channel 43 near the fourth branch channel 44, and the fourth amplifier 64 is placed on the fifth branch channel 45 near the fourth branch channel 44.
[0032] The amplifiers used in this application are all millimeter-wave RF microwave amplifiers made of GaAs material, and the digitally controlled attenuator 12 is a six-digital controlled attenuator made of GaAs material. The serpentine arrangement can reduce space waste and fully utilize the gaps between spaces to form an isolation cavity. In this way, the link has multiple bends, and the amplifiers are placed in the bends, which can effectively reduce the intensity of the spatial radiation signal.
[0033] To further reduce spatial radiation, increase isolation, and prevent self-excitation, the present application also provides slots on the outer wall of the branch channel cavity corresponding to each amplifier stage. The slots are pre-filled with absorbing material. The absorbing material in the present application utilizes high-frequency shielding tape to absorb spatially radiated carrier waves. Specifically, on each branch channel containing an amplifier, an absorbing groove 7 for accommodating the absorbing material is provided on the outer wall of the branch channel between the branch channel and the housing 2. To fully absorb spatial radiation, the length of the absorbing groove 7 is greater than the length of the branch channel occupied by the amplifier. On the branch channel containing the amplifier, a power input port for powering the amplifier is installed on the outer side wall of the branch channel opposite the one containing the absorbing groove 7. Power flows to the power input port through a feed insulator 11 and is transmitted to the amplifier.
[0034] like Figure 2As shown, due to the limited space distribution inside the device, if amplifiers are installed on both the third branch and the fourth branch, the digitally controlled attenuator 12 installed on the third branch channel 43 will cause the third amplifier 63 to be installed near the connection of the fourth branch channel 44. In this way, if the fourth amplifier 64 is placed on the fourth branch channel 44, the distance between the two is relatively close and the isolation effect cannot be achieved. Therefore, it is necessary to set the fourth branch channel 44 to play a buffer isolation role to isolate the third amplifier 63 and the fourth amplifier 64. Therefore, in order to save space, absorbing grooves 7 for placing absorbing materials are opened on the opposite outer walls of the third branch channel 43 and the fifth branch channel 45, and the positions of the two absorbing grooves 7 correspond to the positions of the third amplifier 63 and the fourth amplifier 64, respectively.
[0035] It can be understood that in order to achieve an anti-self-excitation design and prevent the signal of the post-amplifier in the link from leaking to the amplifier at the input end through spatial radiation, the present application, on the one hand, sets the RF receiving channel 4 to be composed of multiple branch channels connected vertically to each other, and places the amplifier in each branch channel, which can effectively reduce the intensity of the spatial radiation signal. In order to further reduce spatial radiation, grooves are cut on the outer wall of the cavity of the branch channel where each amplifier is installed and absorbing materials are affixed in advance to increase isolation and prevent self-excitation.
[0036] The above description is merely a preferred embodiment of the present invention and does not constitute any form of limitation to the present invention. Based on the technical essence of the present invention and within the spirit and principles of the present invention, any simple modification, equivalent replacement and improvement of the above embodiment shall still fall within the scope of protection of the technical solution of the present invention.
Claims
1. K-band RF front-end transceiver processing module, characterized by: It includes a main cavity arranged in the shell, and several signal transceiver transmission link channels are arranged in the main cavity. Each signal transceiver transmission link channel includes a connected RF receiving channel with a RF receiving microwave circuit and a RF transmitting channel with a RF transmitting microwave circuit. The RF receiving channel includes several interconnected branch channels, and the two connected branch channels are vertically connected to each other to form a bending channel. The RF receiving microwave circuit includes a multi-stage amplifier connected in series, and an amplifier is placed on each branch channel. The branch channels are isolated from each other to form an isolation cavity, and the cavity where the amplifier is placed is spatially isolated. On each branch channel where an amplifier is placed, an absorbing groove for placing absorbing material is opened on the outer wall of the branch channel between the branch channel and the shell, and the absorbing material is affixed to the groove on the outer wall of the cavity of the branch channel where each amplifier is installed.
2. The K-band RF front-end transceiver processing module according to claim 1, wherein: The radio frequency receiving channel includes a first branch channel, a second branch channel, a third branch channel, a fourth branch channel and a fifth branch channel which are connected to each other vertically and form a serpentine shape, wherein the first branch channel and the second branch channel are connected to each other vertically, the second branch channel and the third branch channel are connected to each other vertically, the third branch channel and the fourth branch channel are connected to each other vertically, the fourth branch channel and the fifth branch channel are connected to each other vertically, the first branch channel, the third branch channel and the fifth branch channel are parallel, and the second branch channel and the fourth branch channel are parallel.
3. The K-band RF front-end transceiver processing module according to claim 2, wherein: The length of the branch channels is ranked as follows: first branch channel > second branch channel > third branch channel > fifth branch channel > fourth branch channel.
4. The K-band RF front-end transceiver processing module according to claim 2, wherein: The multi-stage amplifier includes a first amplifier, a second amplifier, a third amplifier and a fourth amplifier connected in series in sequence, a digitally controlled attenuator is connected in series between the second amplifier and the third amplifier, the first amplifier is placed in the middle of the first branch channel, the second amplifier is placed in the middle of the second branch channel, the third amplifier is placed on the third branch channel close to the fourth branch channel, and the fourth amplifier is placed on the fifth branch channel close to the fourth branch channel.
5. The K-band RF front-end transceiver processing module according to claim 4, characterized in that: Wave absorbing grooves for placing absorbing materials are provided on the opposite outer walls of the third branch channel and the fifth branch channel, and the positions of the two wave absorbing grooves correspond to the positions of the third amplifier and the fourth amplifier respectively.
6. The K-band RF front-end transceiver processing module according to claim 1, characterized in that: The RF receiving channel and the RF transmitting channel in each signal transceiver transmission link channel share one RF port.
7. The K-band RF front-end transceiver processing module according to claim 1, characterized in that: Each signal transceiver transmission link channel also includes an intermediate frequency receiving channel equipped with an intermediate frequency receiving microwave circuit and an intermediate frequency transmitting channel equipped with an intermediate frequency transmitting microwave circuit, and the intermediate frequency receiving channel is connected to the intermediate frequency receiving port, and the intermediate frequency transmitting channel is connected to the intermediate frequency transmitting port.
8. The K-band RF front-end transceiver processing module according to claim 1, wherein: On the branch channel where the amplifier is placed, a power input port for supplying power to the amplifier is installed on the other outer side wall of the branch channel opposite to the one where the wave absorbing groove is opened.
Citation Information
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High-gain limiting amplifier device based on SIP (Session Initiation Protocol) technology
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